WO2022097337A1 - Dispositif de rayonnement, dispositif de refroidissement à rayonnement et procédé de fabrication de dispositif de rayonnement - Google Patents

Dispositif de rayonnement, dispositif de refroidissement à rayonnement et procédé de fabrication de dispositif de rayonnement Download PDF

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WO2022097337A1
WO2022097337A1 PCT/JP2021/029560 JP2021029560W WO2022097337A1 WO 2022097337 A1 WO2022097337 A1 WO 2022097337A1 JP 2021029560 W JP2021029560 W JP 2021029560W WO 2022097337 A1 WO2022097337 A1 WO 2022097337A1
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Prior art keywords
conductor
flexible film
radiation device
disks
curved
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PCT/JP2021/029560
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English (en)
Japanese (ja)
Inventor
節文 大塚
惠司 江畑
武 井上
淳一 ▲高▼原
和也 君野
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国立大学法人大阪大学
住友電気工業株式会社
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Publication of WO2022097337A1 publication Critical patent/WO2022097337A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/10—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material
    • B32B3/14—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material characterised by a face layer formed of separate pieces of material which are juxtaposed side-by-side
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/025—Electric or magnetic properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B23/00—Machines, plants or systems, with a single mode of operation not covered by groups F25B1/00 - F25B21/00, e.g. using selective radiation effect

Definitions

  • the present disclosure relates to a radiant device, a radiative cooling device and a method for manufacturing the radiant device.
  • This application claims priority based on Japanese Patent Application No. 2020-185732 filed on November 6, 2020, and incorporates all the contents described in the Japanese patent application.
  • Patent Document 1 discloses a selective radiative cooling structure including a polymer and a selective emission layer containing a plurality of dielectric particles dispersed in the polymer. When making a structure in which microspheres are dispersed, microspheres may aggregate.
  • Patent Document 2 discloses a radiation device using a plasmonic metamaterial. Since the radiant device is manufactured using lithography technology, it is formed on a silicon substrate having a smooth surface.
  • the radiation device includes a flexible film, a conductor layer provided on the flexible film, a semiconductor layer provided on the conductor layer, and the semiconductor layer. It comprises a plurality of conductor discs provided and spaced apart from each other.
  • FIG. 1 is a cross-sectional view schematically showing a radiation device according to an embodiment.
  • FIG. 2 is a plan view showing a plurality of unit constituent regions arranged in an array.
  • FIG. 3 is a plan view showing an arrangement pattern of the conductor disk in each unit constituent region.
  • FIG. 4 is a cross-sectional view schematically showing a curved radiation device of FIG.
  • FIG. 5 is a diagram showing a schematic configuration of a radiative cooling device according to an embodiment.
  • FIG. 6 is a graph showing an example of the absorption spectrum of the radiation device according to the embodiment.
  • FIG. 7A is a cross-sectional view schematically showing one step of a method for manufacturing a radiation device according to an embodiment.
  • FIG. 7B is a cross-sectional view schematically showing one step of a method for manufacturing a radiation device according to an embodiment.
  • the present disclosure provides a method of manufacturing a radiant device, a radiative cooling device and a radiant device that can be curved.
  • the radiation device is provided on the flexible film, the conductor layer provided on the flexible film, the semiconductor layer provided on the conductor layer, and the semiconductor layer. , A plurality of conductor disks arranged apart from each other.
  • the radiant device can be curved by bending the flexible film.
  • the conductor layer may be provided on the main surface of the flexible film, and the flexible film may be bendable so that the main surface has a radius of curvature of 60 mm or less. In this case, the radiant device can be curved relatively large.
  • the absolute value of the dimensional change rate of each of the plurality of conductor disks and the space between the plurality of adjacent conductor disks may be 10% or less.
  • the absolute value of the dimensional change rate of each conductor disk and each interval can be reduced.
  • the absolute value of the deviation of the absorption wavelength due to the dimensional change can be reduced to, for example, 5 ⁇ m or less.
  • the flexible film may contain a resin.
  • the flexible film may contain polyimide.
  • the plurality of conductor disks are arranged so that each of the plurality of unit constituent regions having the same area and the same shape on the main surface of the semiconductor layer has the same arrangement pattern, and each of the plurality of unit constituent regions is 4. It has a rectangular shape with each side having a length of 5.5 ⁇ m or more and 5.5 ⁇ m or less, and the plurality of unit constituent areas are adjacent to each other in two directions orthogonal to each other along the main surface. May be arranged in an array so that they have common sides.
  • the radiating device can selectively emit the electromagnetic wave of the "atmospheric window" corresponding to the wavelength range of 4.5 ⁇ m or more and 5.5 ⁇ m or less.
  • the arrangement pattern is a 3 ⁇ 3 matrix in which three conductor disks are arranged along the first side of the rectangular shape and three conductor disks are arranged along the second side orthogonal to the first side. It is composed of nine conductor discs arranged so as to correspond to, and the nine conductor discs may include four or more kinds of conductor discs having different diameters from each other. In this case, nine conductor disks can be appropriately arranged in a rectangular shape having each side having a length of 4.5 ⁇ m or more and 5.5 ⁇ m or less.
  • the radiative cooling device includes a member having a curved surface and the radiant device, and the radiant device is provided on the member so that the flexible film faces the curved surface. ..
  • the flexible film can be curved to follow the curved surface.
  • the method for manufacturing the radiation device includes a step of providing a flexible film on a substrate, and a plurality of conductor layers and semiconductor layers arranged apart from each other on the flexible film.
  • the present invention includes a step of sequentially forming the conductor discs of the above and a step of peeling the flexible film from the substrate.
  • a radiant device provided with a flexible film can be obtained.
  • the step of providing the flexible film may include adhering the flexible film to the substrate by an adhesive layer. In this case, the displacement of the flexible film with respect to the substrate can be suppressed.
  • FIG. 1 is a cross-sectional view schematically showing a radiation device according to an embodiment.
  • the radiation device 100 shown in FIG. 1 includes a flexible film 110, a conductor layer 120 provided on the flexible film 110, a semiconductor layer 130 provided on the conductor layer 120, and a semiconductor layer 130. It is provided with a plurality of conductor disks 150 provided above.
  • the flexible film 110 has a lower surface 110a and an upper surface 110b (main surface) arranged on opposite sides in the Z-axis direction.
  • the Z-axis direction corresponds to the thickness direction of the flexible film 110.
  • the conductor layer 120 is provided on the upper surface 110b of the flexible film 110.
  • the conductor layer 120 has a lower surface 120a facing the upper surface 110b and an upper surface 120b opposite to the lower surface 120a.
  • the semiconductor layer 130 is provided on the upper surface 120b of the conductor layer 120.
  • the semiconductor layer 130 has a lower surface 130a facing the upper surface 120b and an upper surface 130b (main surface) opposite to the lower surface 130a.
  • the plurality of conductor disks 150 are provided on the upper surface 120b of the semiconductor layer 130 and are arranged apart from each other.
  • Each conductor disk 150 has, for example, a circle when viewed from the Z-axis direction. Even if a surface protective layer 140 is provided on the upper surface 130b of the semiconductor layer 130 so as to cover the plurality of conductor disks 150 in order to protect the plurality of conductor disks 150 and prevent light from being incident from the outside. good.
  • the surface protective layer 140 can also function as a reflective film.
  • the flexible film 110 may contain a resin. Examples of resins include polyimide.
  • the flexible film 110 may contain, for example, a material having a Young's modulus of 0.5 GPa or more and 100 GPa or less.
  • the thickness of the flexible film 110 is, for example, 1 ⁇ m or more and 3000 ⁇ m or less.
  • the flexible film 110 may contain an inorganic material.
  • the flexible film 110 may be, for example, a thin glass plate having a thickness of 20 ⁇ m or more and 500 ⁇ m or less (for example, G-Leaf (registered trademark) manufactured by Nippon Electric Glass Co., Ltd.).
  • the flexible film 110 may have a heat resistance of, for example, 300 ° C. or higher.
  • the flexible film 110 may have high resistance to organic solvents and strong acids.
  • the average surface roughness Ra (arithmetic mean roughness) in a region (reference length) of about 50 ⁇ m on the upper surface 130b of the flexible film 110 may be 5 nm or less.
  • the needle-shaped protrusions can be removed by oxygen plasma treatment (ashing) or the like.
  • the average surface roughness Ra in the entire area (reference length over the whole) of the upper surface 130b of the flexible film 110 may be 500 nm or less.
  • the conductor layer 120 may contain a metal. Examples of metals include aluminum (Al), gold (Au), silver (Ag) and copper (Cu).
  • the thickness of the conductor layer 120 may be larger than the thickness of the conductor disk 150.
  • the thickness of the conductor layer 120 may be 100 nm or more and 200 nm or less. By increasing the thickness of the conductor layer 120, the transmission of electromagnetic waves can be suppressed.
  • the semiconductor layer 130 may contain at least one of silicon (Si) and germanium (Ge). In this case, the absorption rate of the semiconductor layer 130 becomes small in the mid-infrared wavelength region, that is, the wavelength region shorter than 8 ⁇ m.
  • the thickness of the semiconductor layer 130 may be 100 nm or more and 1000 nm or less.
  • Each of the plurality of conductor discs 150 may contain metal.
  • the metal example includes the same material as the material example of the conductor layer 120.
  • the thickness of each conductor disk 150 may be 30 nm or more and 100 nm or less in order to improve the controllability of the shape and suppress the manufacturing cost. In this case, even if the radiation characteristics change due to a change in the thickness of the conductor disk 150, a sufficient emissivity can be obtained in a wavelength range of 8 ⁇ m or more and 13 ⁇ m or less.
  • each conductor disk 150 are repeatedly analyzed by the FDTD method (Finite-difference time-domain) within the range of 0.8 ⁇ m or more and 1.5 ⁇ m or less, and the wavelength is 8 ⁇ m or more and 13 ⁇ m or less. It can be selected to obtain high radiance in the region.
  • FDTD method Finite-difference time-domain
  • FIG. 2 is a plan view showing a plurality of unit constituent areas arranged in an array.
  • FIG. 3 is a plan view showing an arrangement pattern of the conductor disk in each unit constituent region.
  • the arrangement pattern of the conductor disk is not limited to this example.
  • the plurality of conductor disks 150 may be arranged so that each of the plurality of unit constituent regions R having the same area and the same shape on the upper surface 130b of the semiconductor layer 130 has the same arrangement pattern.
  • Each of the plurality of unit constituent regions R may have a rectangular shape having each side having a length of 4.5 ⁇ m or more and 5.5 ⁇ m or less. The lengths of the two sides adjacent to each other with one internal angle in between may be different from each other or may be equal to each other.
  • each of the plurality of unit constituent regions R has a square shape having each side having a length of 4.5 ⁇ m or more and 5.5 ⁇ m or less.
  • the plurality of unit constituent regions R may be arranged in an array so that adjacent unit constituent regions R have common sides in each of the X-axis direction and the Y-axis direction orthogonal to each other along the upper surface 130b.
  • the plurality of unit configuration areas R are arranged without gaps.
  • a two-dimensional periodic structure of the arrangement pattern of the plurality of conductor disks 150 is formed on the upper surface 130b.
  • the two-dimensional periodic structure is an infrared plasmon periodic structure that generates electromagnetic waves in the mid-infrared wavelength region.
  • the length of one side of the unit constituent region R corresponds to the periodic pitch P of the two-dimensional periodic structure.
  • the arrangement pattern in each unit constituent area R is composed of nine conductor disks 150 arranged so as to correspond to a 3 ⁇ 3 matrix.
  • three conductor disks 150 are arranged along the first side of the rectangular shape, and three conductor disks 150 are arranged along the second side orthogonal to the first side.
  • the corresponding conductor disk 150 is arranged at each of the nine intersections (lattice points) C between the lines a1, a2 and a3 and the lines b1, b2 and b3.
  • the center of each conductor disk 150 coincides with each intersection C.
  • the lines a1, a2 and a3 extend parallel to the X-axis direction and are set at equal intervals in the Y-axis direction.
  • the lines b1, b2 and b3 extend parallel to the Y-axis direction and are set at equal intervals in the X-axis direction.
  • the lines a1, a2 and a3 are arranged in order in the Y-axis direction.
  • the lines b1, b2 and b3 are arranged in order in the X-axis direction.
  • the nine conductor discs 150 arranged in one unit constituent area R include four or more types of conductor discs 150 having different diameters from each other.
  • nine conductor disks 150a to 150i are arranged in the unit constituent region R in a state of being separated from each other on the intersection C of the lines a1 to a3 and the lines b1 to b3.
  • the first conductor disk 150a is arranged at the intersection C between the line a3 and the line b1.
  • the second conductor disk 150b is arranged at the intersection C between the line a3 and the line b2.
  • the third conductor disk 150c is arranged at the intersection C between the line a3 and the line b3.
  • the fourth conductor disk 150d is arranged at the intersection C between the line a2 and the line b1.
  • the fifth conductor disk 150e is arranged at the intersection C between the line a2 and the line b2.
  • the sixth conductor disk 150f is arranged at the intersection C between the line a2 and the line b3.
  • the seventh conductor disk 150 g is arranged at the intersection C between the line a1 and the line b1.
  • the eighth conductor disk 150h is arranged at the intersection C between the line a1 and the line b2.
  • the ninth conductor disk 150i is arranged at the intersection C between the line a1 and the line b3.
  • the diameter of the first conductor disk 150a is 0.9 ⁇ m.
  • the diameter of the second conductor disk 150b is 1.1 ⁇ m.
  • the diameter of the third conductor disk 150c is 0.9 ⁇ m.
  • the diameter of the fourth conductor disk 150d is 1.4 ⁇ m.
  • the diameter of the fifth conductor disk 150e is 1.5 ⁇ m.
  • the diameter of the sixth conductor disk 150f is 1.2 ⁇ m.
  • the diameter of the seventh conductor disk 150 g is 0.9 ⁇ m.
  • the diameter of the eighth conductor disk 150h is 1.3 ⁇ m.
  • the diameter of the ninth conductor disk 150i is 1.0 ⁇ m. Therefore, in this example, the nine conductor discs 150 arranged in one unit constituent region R include three conductor discs 150a, 150c, 150 g having a minimum diameter (0.9 ⁇ m).
  • the nine conductor discs 150 have seven types (0.9 ⁇ m, 1.0 ⁇ m, 1.1 ⁇ m, 1.2 ⁇ m, 1.3 ⁇ m, 1.4 ⁇ m, 1.5 ⁇ m) of conductor discs 150a having different diameters from each other. , 150b, 150d, 150e, 150f, 150h, 150i.
  • the center spacing (that is, the spacing between the intersections C) of the conductor disks 150 adjacent to each other is 1.7 ⁇ m.
  • the length of one side of the unit constituent region R corresponding to the periodic pitch P is 5.1 ⁇ m.
  • FIG. 4 is a cross-sectional view schematically showing a curved radiation device of FIG.
  • the flexible film 110 may be bendable so that the upper surface 110b of the flexible film 110 has a radius of curvature CR of 60 mm or less.
  • the flexible film 110 may be curved so that the upper surface 110b is convex.
  • the flexible film 110 may be curved so that the upper surface 110b is concave, or the upper surface 110b may be curved so as to include both a convex region and a concave region.
  • the flexible film 110 can be curved so as to surround the central axis CN along the upper surface 110b.
  • the radius of curvature CR corresponds to the distance from the central axis CN to the upper surface 110b.
  • the absolute value of the dimensional change rate of each of the plurality of conductor disks 150 and the space between the plurality of adjacent conductor disks 150 may be 10% or less. Changes in the dimensions of each conductor disk 150 and each spacing may be irreversible.
  • the dimensional change rate RT1 (%) of each of the plurality of conductor disks 150 can be calculated by the following formula.
  • RT1 (Dn2-Dn1) / Dn1 ⁇ 100
  • Dn1 represents the dimension before bending in the nth conductor disk 150 among the k conductor disks 150 arranged in the unit constituent region R (see FIG. 1).
  • Dn1 is the length of the non-curved upper surface of the nth conductor disk 150 in the cross section orthogonal to the Y-axis direction.
  • Dn2 represents the dimension of the nth conductor disk 150 after bending (see FIG. 4).
  • Dn2 is the length of the curved upper surface of the nth conductor disk 150 in the cross section orthogonal to the central axis CN.
  • k is a natural number of 2 or more.
  • n is a natural number.
  • k is 9.
  • An example of the nth conductor disk 150 is a first conductor disk 150a having a minimum diameter (0.9 ⁇ m).
  • the dimensional change rate RT1 (%) becomes a positive value.
  • the dimensional change rate RT1 (%) becomes a negative value.
  • the dimensional change rate RT2 (Gn2-Gn1) / Gn1 ⁇ 100
  • Gn1 represents the dimension before bending at the nth interval among the m intervals in the unit constituent region R (see FIG. 1).
  • Gn1 is the distance between the non-curved upper surfaces of the plurality of adjacent conductor disks 150 in the cross section orthogonal to the Y-axis direction.
  • Gn2 represents the dimension after bending at the nth interval (see FIG. 4).
  • Gn2 is the distance between the curved upper surfaces of the plurality of adjacent conductor disks 150 in the cross section orthogonal to the central axis CN.
  • n and n are natural numbers. In the examples of FIGS. 2 and 3, m is 6.
  • An example of the nth interval is the smallest interval among the m intervals.
  • FIG. 5 is a diagram showing a schematic configuration of a radiative cooling device according to an embodiment.
  • the radiative cooling device 10 shown in FIG. 5 is, for example, a sky radiator.
  • the radiative cooling device 10 includes the radiant device 100 and the member 300 of the present embodiment.
  • the member 300 has a curved surface 300a.
  • the radiation device 100 is provided on the member 300 so that the flexible film 110 faces the curved surface 300a.
  • the radiative cooling device 10 may be a radiant panel or the like having a spectrum having a high emissivity in the window wavelength band of the atmosphere.
  • the radiative cooling device 10 has a front surface 10a that emits electromagnetic waves in a specific wavelength range, and a back surface 10b that is opposite to the front surface 10a.
  • the radiation device 100 located on the surface 10a is located far from the building 200.
  • the member 300 located on the back surface 10b is arranged near the building 200.
  • the radiative cooling device 10 may be arranged in the building 200 so as to be in direct or indirect contact with the air warmed by the heat source 210.
  • the radiative cooling device 10 can absorb the heat of the air heated by the heat source 210 in the building 200, convert the heat into the electromagnetic wave 230 in the window wavelength range of the atmosphere, and release the heat to the outside of the building 200. Since the thermal equilibrium between the radiative cooling device 10 and the universe is performed through the window wavelength region of the atmosphere, the radiative cooling device 10 loses thermal energy. As a result, the temperature of the radiative cooling device 10 is lowered. The warmed air in the building 200 is in contact with the back surface 10b of the radiative cooling device 10. Therefore, the warmed air is cooled by transferring the heat energy once stored to the radiative cooling device 10. The cooled air is returned indoors by natural convection 220 or forced circulation in the building 200. Therefore, the radiative cooling device 10 according to the present embodiment can function as a cooling device.
  • FIG. 6 is a graph showing an example of the absorption spectrum of the radiation device according to the embodiment.
  • the horizontal axis indicates the wavelength ( ⁇ m), and the vertical axis indicates the absorption rate.
  • the value of the absorption rate on the vertical axis is normalized with the maximum value as 1.
  • the graph of FIG. 6 shows the calculation result of the absorption spectrum for an example of a radiation device having the following structure.
  • the radiant device of this example includes an aluminum layer having a thickness of 100 nm, a silicon layer having a thickness of 500 nm, and a plurality of conductor disks having a thickness of 50 nm, which are sequentially laminated on a polyimide film.
  • the arrangement pattern of the plurality of conductor disks is the same as the arrangement pattern of the examples of FIGS. 2 and 3. From FIG. 6, it can be seen that a high absorption rate can be obtained in the "atmospheric window" corresponding to the wavelength range of 8 ⁇ m or more and 13 ⁇ m or less.
  • the radiation device 100 can be curved by bending the flexible film 110 as shown in FIG. Therefore, according to the radiative cooling device 10 of the present embodiment, as shown in FIG. 5, for example, the flexible film 110 can be curved to follow the curved surface 300a of the member 300.
  • the radiation device 100 can be curved relatively large.
  • the absolute value of the dimensional change rate RT1 of each of the plurality of conductor disks 150 and the plurality of adjacent conductor disks 150 are adjacent to each other.
  • the absolute value of the dimensional change rate RT2 of the interval between them may be 10% or less.
  • the absolute value of the deviation of the absorption wavelength due to the dimensional change can be reduced to, for example, 0.5 ⁇ m or less.
  • each conductor disk 150 and each interval are set so that the absorption wavelength is 5 ⁇ m, even if the flexible film 110 is curved, an absorption wavelength within the wavelength range of 4.5 ⁇ m or more and 5.5 ⁇ m or less can be obtained. Be done.
  • the radiation device 100 corresponds to a wavelength region of 4.5 ⁇ m or more and 5.5 ⁇ m or less.
  • the electromagnetic waves of the "atmospheric window" can be selectively emitted.
  • the length is 4.5 ⁇ m or more and 5.5 ⁇ m or less.
  • Nine conductor discs 150 can be appropriately arranged in a rectangular shape having each side of the above.
  • FIGS. 7A and 7B is a cross-sectional view schematically showing one step of a method for manufacturing a radiation device according to an embodiment.
  • the radiation device 100 of this embodiment can be manufactured as follows.
  • the flexible film 110 is provided on the substrate 400.
  • the substrate 400 is, for example, a silicon substrate.
  • the flexible film 110 is provided so that the lower surface 110a faces the substrate 400.
  • the flexible film 110 may be adhered to the substrate 400 by the adhesive layer 410. In this case, the displacement of the flexible film 110 with respect to the substrate 400 can be suppressed.
  • the adhesive layer 410 may have a heat resistance of, for example, 300 ° C. or higher.
  • the adhesive layer 410 may have high resistance to organic solvents and strong acids.
  • the adhesive layer 410 may contain, for example, a silicone-based pressure-sensitive adhesive (pressure-sensitive adhesive).
  • An example of the flexible film 110 provided with the adhesive layer 410 is an adhesive tape (Capton (registered trademark) adhesive tape manufactured by Teraoka Seisakusho Co., Ltd.).
  • the flexible film 110 has, for example, a rectangular shape when viewed from the thickness direction of the flexible film 110.
  • the upper surface 110b of the flexible film 110 may be cleaned with an alcohol-based cleaning solution. As a result, the organic matter on the upper surface 110b is removed. After that, the upper surface 110b may be treated with oxygen plasma. As a result, the needle-like protrusions on the upper surface 110b and the residual organic matter are removed.
  • the conductor layer 120, the semiconductor layer 130, and a plurality of conductor disks 150 arranged apart from each other are sequentially formed on the flexible film 110.
  • the plurality of conductor discs 150 may be formed by photolithography and etching.
  • the conductor layer 120 (for example, thickness 100 nm) and the semiconductor layer 130 (for example, thickness 500 nm) are continuously deposited on the flexible film 110 by, for example, magnetron sputtering.
  • the deposition may be carried out while adjusting the temperature of the substrate 400 within the range of 150 ° C. or higher and 300 ° C. or lower. As a result, the effects of densification and surface flattening of the conductor layer 120 and the semiconductor layer 130 can be obtained.
  • a resist film is formed on the upper surface 130b of the semiconductor layer 130, and then stepper exposure and development are performed to form an opening pattern on the resist film. Then, a conductor layer (for example, a thickness of 50 nm) is deposited on the resist film and in the opening pattern by, for example, magnetron sputtering. Then, by removing the resist film and the conductor layer on the resist film using an organic solvent, a plurality of conductor disks 150 can be obtained.
  • a conductor layer for example, a thickness of 50 nm
  • the flexible film 110 is peeled off from the substrate 400.
  • the flexible film 110 can be detached from the substrate 400 by mechanically pulling from the corners of the flexible film 110. In this way, the radiation device 100 is obtained.
  • the radiation device 100 (see FIG. 1) provided with the flexible film 110 can be obtained.
  • the dimensional accuracy of each conductor disc 150 can be improved.
  • the flexible film 110 is adhered to the substrate 400 by the adhesive layer 410, the displacement of the flexible film 110 with respect to the substrate 400 can be suppressed. Therefore, the dimensional accuracy of each conductor disk 150 is further improved.
  • each unit constituent area R has the same arrangement pattern, but a plurality of unit constituent areas R may have different arrangement patterns.
  • the first unit constituent area R may have a first arrangement pattern.
  • the second unit configuration area R may have a second arrangement pattern obtained by rotating the first arrangement pattern by 90 °.
  • the arrangement pattern in each unit constituent area R is composed of nine conductor disks 150 arranged so as to correspond to a 3 ⁇ 3 matrix.
  • the arrangement pattern in each unit configuration region R may be composed of 16 conductor disks 150 arranged so as to correspond to a 4 ⁇ 4 matrix, or may be arranged so as to correspond to a 5 ⁇ 5 matrix. It may be composed of only 25 conductor discs 150, or may be composed of 100 conductor discs 150 arranged so as to correspond to a 10 ⁇ 10 matrix. As the number of conductor disks 150 in each unit constituent region R increases, the characteristics of the absorption spectrum can be controlled with high accuracy.
  • Natural convection 230 Electromagnetic wave 300 ... Member 300a ... Curved surface 400 ... Substrate 410 ... Adhesive Layer a1 ... line a2 ... line a3 ... line b1 ... line b2 ... line b3 ... line C ... intersection CN ... central axis CR ... radius of curvature P ... periodic pitch R ... unit constituent area

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Abstract

Ce dispositif de rayonnement comprend un film souple, une couche électro-conductrice disposée sur le film souple, une couche semi-conductrice disposée sur la couche électro-conductrice, et une pluralité de disques électro-conducteurs qui sont disposés sur la couche semi-conductrice et qui sont positionnés de manière à être espacés les uns des autres.
PCT/JP2021/029560 2020-11-06 2021-08-10 Dispositif de rayonnement, dispositif de refroidissement à rayonnement et procédé de fabrication de dispositif de rayonnement WO2022097337A1 (fr)

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WO2018043298A1 (fr) * 2016-08-31 2018-03-08 国立研究開発法人理化学研究所 Corps absorbant la lumière, bolomètre, corps absorbant les rayons infrarouges, dispositif de génération d'énergie thermique solaire, film de refroidissement rayonnant, et procédé de fabrication de corps absorbant la lumière
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JP2014143118A (ja) * 2013-01-25 2014-08-07 Daicel Corp 光電変換素子用組成物および光電変換素子
WO2016031547A1 (fr) * 2014-08-29 2016-03-03 国立研究開発法人物質・材料研究機構 Matériau de rayonnement/d'absorption d'onde électromagnétique, son procédé de fabrication, et source infrarouge
JP2017096516A (ja) * 2015-11-19 2017-06-01 旭化成株式会社 冷暖房用パネル、及び冷暖房システム
JP2019515967A (ja) * 2016-02-29 2019-06-13 ザ リージェンツ オブ ザ ユニヴァーシティ オブ コロラド，ア ボディ コーポレイト 放射冷却構造体及びシステム
JP2017175201A (ja) * 2016-03-18 2017-09-28 三井化学株式会社 メタマテリアルフィルム及びその製造方法
WO2018043298A1 (fr) * 2016-08-31 2018-03-08 国立研究開発法人理化学研究所 Corps absorbant la lumière, bolomètre, corps absorbant les rayons infrarouges, dispositif de génération d'énergie thermique solaire, film de refroidissement rayonnant, et procédé de fabrication de corps absorbant la lumière
JP2019192910A (ja) * 2018-04-18 2019-10-31 国立大学法人東京農工大学 スイッチング素子及び熱電変換素子
WO2020026345A1 (fr) * 2018-07-31 2020-02-06 住友電気工業株式会社 Dispositif de rayonnement et dispositif de refroidissement d'émission

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