WO2022095262A1 - 用于铜钼膜层的蚀刻剂与铜钼膜层的蚀刻方法 - Google Patents

用于铜钼膜层的蚀刻剂与铜钼膜层的蚀刻方法 Download PDF

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WO2022095262A1
WO2022095262A1 PCT/CN2020/140637 CN2020140637W WO2022095262A1 WO 2022095262 A1 WO2022095262 A1 WO 2022095262A1 CN 2020140637 W CN2020140637 W CN 2020140637W WO 2022095262 A1 WO2022095262 A1 WO 2022095262A1
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Prior art keywords
etching
copper
film layer
etchant
molybdenum film
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English (en)
French (fr)
Inventor
张月红
何毅烽
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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Priority to US17/600,169 priority Critical patent/US20220349064A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Definitions

  • the invention relates to the field of display technology, in particular to an etchant for a copper-molybdenum film layer and an etching method for the copper-molybdenum film layer.
  • metal copper has been widely used in the preparation of large-size displays due to its high electrical conductivity and relatively low price.
  • a thin buffer layer will be added between it and the glass.
  • Molybdenum or molybdenum alloy that is, to form a copper-molybdenum laminated film.
  • the invention provides an etchant for a copper-molybdenum film layer and an etching method for the copper-molybdenum film layer, which can obtain better etching effect.
  • the present invention provides an etchant for a copper-molybdenum film layer, the etchant includes an etching main agent, and the etching main agent includes hydrogen peroxide, a chelating agent, a first inorganic Acid and water; wherein, the mass percentage content of the chelating agent in the etching main agent is 2%-10%, and the mass percentage content of the first inorganic acid in the etching main agent is 1% -10%, the mass percentage content of the hydrogen peroxide in the etching main agent is 4%-10%.
  • the present invention provides a method for etching a copper-molybdenum film layer, the etching method comprising:
  • a substrate is provided, the copper-molybdenum film layer is formed on the substrate, a patterned photoresist layer is formed on the copper-molybdenum film layer, and the copper-molybdenum film layer comprises a molybdenum film layer and a layer disposed on the molybdenum film a copper film layer on the side away from the substrate;
  • the etching main agent comprises hydrogen peroxide, a chelating agent, a first Inorganic acid and water, the mass percentage content of the chelating agent in the etching main agent is 2%-10%, and the mass percentage content of the first inorganic acid in the etching main agent is 1%- 10%, the mass percentage content of the hydrogen peroxide in the etching main agent is 4%-10%; and
  • the patterned photoresist layer is removed by lift-off.
  • the present invention provides an etchant for a copper-molybdenum film layer and an etching method for the copper-molybdenum film layer, wherein the etchant includes an etching main agent, and the etching main agent includes hydrogen peroxide, a chelating agent, an inorganic acid and water, the mass percentage content of the chelating agent in the etching main agent is 2%-10%, and the mass percentage content of the inorganic acid in the etching main agent is 1%-10%.
  • Fig. 1 is the micro-topography diagram of the phenomenon of molybdenum undercut after the etching of the copper-molybdenum film layer characterized by scanning electron microscope in the prior art of the present invention
  • Fig. 2 is the microscopic topography of the molybdenum residue phenomenon after the etching of the copper-molybdenum film layer characterized by scanning electron microscope in the prior art of the present invention
  • FIG. 3 is a cross-sectional microscopic topography diagram of the film layer 1 characterized by a scanning electron microscope in an embodiment of the present invention after the first etching;
  • FIG. 4 is a surface microscopic topography diagram of the film layer 1 characterized by a scanning electron microscope in an embodiment of the present invention after the first etching;
  • FIG. 5 is a cross-sectional microscopic topography diagram after the first etching of the film layer 2 characterized by a scanning electron microscope in the embodiment of the present invention
  • FIG. 6 is a surface microscopic topography diagram of the film layer 2 characterized by a scanning electron microscope in the embodiment of the present invention after the first etching;
  • FIG. 7 is a cross-sectional microscopic topography diagram of the film layer 1 characterized by a scanning electron microscope after the second etching in the embodiment of the present invention
  • FIG. 8 is a surface microscopic topography diagram of the film layer 1 characterized by a scanning electron microscope after the second etching in the embodiment of the present invention
  • FIG. 9 is a cross-sectional microscopic topography diagram of the film layer 2 characterized by a scanning electron microscope after the second etching in the embodiment of the present invention.
  • FIG. 10 is a surface microscopic topography diagram of the film layer 2 characterized by a scanning electron microscope in the embodiment of the present invention after the second etching;
  • FIG. 11 is a cross-sectional microscopic topography diagram of the film layer 1 characterized by a scanning electron microscope after the third etching in the embodiment of the present invention
  • FIG. 13 is a cross-sectional microscopic topography diagram of the film layer 2 characterized by a scanning electron microscope in the embodiment of the present invention after the third etching;
  • FIG. 15 is a cross-sectional microscopic topography diagram of the film layer 1 characterized by a scanning electron microscope after the fourth etching in an embodiment of the present invention
  • FIG. 16 is a surface microscopic topography diagram of the film layer 1 characterized by a scanning electron microscope after the fourth etching in the embodiment of the present invention
  • 17 is a cross-sectional microscopic topography diagram of the film layer 2 characterized by a scanning electron microscope after the fourth etching in the embodiment of the present invention
  • Fig. 18 is the surface micro-topography diagram after the fourth etching of film layer 2 characterized by scanning electron microscope in the embodiment of the present invention.
  • 19 is a cross-sectional microscopic topography diagram of the film layer 1 characterized by a scanning electron microscope after the fifth etching in the embodiment of the present invention
  • FIG. 20 is a surface microscopic topography diagram of the film layer 1 characterized by a scanning electron microscope after the fifth etching in the embodiment of the present invention
  • 21 is a cross-sectional microscopic topography diagram of the film layer 2 characterized by a scanning electron microscope in the embodiment of the present invention after the fifth etching;
  • FIG. 22 is a microscopic topography diagram of the surface of the film layer 2 after the fifth etching, which is characterized by a scanning electron microscope in an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, features delimited with “first”, “second” may expressly or implicitly include one or more of said features. In the description of the present invention, “plurality” means two or more, unless otherwise expressly and specifically defined.
  • the word "exemplary” is used to mean “serving as an example, illustration or illustration”. Any embodiment of this disclosure described as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments.
  • the following description is presented to enable any person skilled in the art to make and use the present invention. In the following description, details are set forth for the purpose of explanation. It will be understood by one of ordinary skill in the art that the present invention may be practiced without the use of these specific details. In other instances, well-known structures and procedures have not been described in detail so as not to obscure the description of the present invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown but is to be accorded the widest scope consistent with the principles and features disclosed herein.
  • metal copper with high electrical conductivity is usually used as the metal wiring material, but due to the properties of the copper material itself, the copper film will The adhesion between the layer and the glass substrate is poor and the film is peeled off, or the copper atoms are easily diffused into the silicon oxide or silicon nitride film, which affects the performance of the display panel.
  • a thinner layer is installed under the copper film layer.
  • the molybdenum film layer acts as a buffer layer to overcome the above-mentioned defects.
  • the metal molybdenum will be oxidized into molybdenum dioxide or molybdenum pentoxide by hydrogen peroxide.
  • the specific reaction principle is shown in the following formula (1), and the above two oxides in the etchant have It has poor solubility and will remain on the glass substrate to form molybdenum residues.
  • obvious white lumps of foreign matter can be observed on the surface. Elemental analysis of this foreign matter shows that the results mainly include molybdenum and oxygen elements. , which is the aforementioned molybdenum oxide, and the foreign matter of molybdenum oxide adheres to the surface of the substrate, which may cause a short circuit between the metal traces in the thin film transistor device, resulting in abnormal picture.
  • the existing solution is usually to add a certain amount of fluorine-containing additives, such as hydrofluoric acid or ammonium fluoride.
  • fluorine-containing additives such as hydrofluoric acid or ammonium fluoride.
  • this kind of fluorine-containing additive will cause some disadvantages.
  • the treatment cost of fluorine-containing etching waste liquid is high and it is not friendly to the environment;
  • the fluoride ion in the etchant it is easy to cause hidden dangers to the health of operators, and even more
  • fluoride ions will have a certain corrosive effect on the glass substrate, which is easy to cause damage to the glass substrate.
  • the copper molybdenum etchant still has the problem of low service life, mainly because, as the etching continues, the concentration of copper ions in the etchant increases, and the etching
  • the main etching component in the agent is usually hydrogen peroxide.
  • the concentration of copper ions reaches a certain level, it will violently catalyze the decomposition of hydrogen peroxide and generate a large amount of hydrogen, which will lead to greater safety hazards and may even cause explosions;
  • the content of each active ingredient in the copper-molybdenum etchant changes, causing changes in etching characteristics, resulting in product abnormalities.
  • the service life of the copper-molybdenum etchant is still relatively low, resulting in a sharp increase in manufacturing cost, and an increase in waste discharge, which pollutes the environment. Therefore, improving the lifetime of the etchant is crucial for cost reduction and environmental friendliness.
  • an embodiment of the present invention provides an etchant for a copper-molybdenum film layer, the etchant includes an etching main agent, and the etching main agent includes hydrogen peroxide, a chelating agent, a first inorganic acid and water , wherein, the mass percentage content of the chelating agent in the etching main agent is 2%-10%, a further preferred range is 4%-6%, and the first inorganic acid in the etching main agent The mass percentage content is 1%-10%, and the further preferred range is 1%-4%.
  • the mass percentage content of the hydrogen peroxide in the etching main agent is 4%-10%, and a further preferred range is 6%-9%.
  • hydrogen peroxide as the main etching component, can react with metallic copper and molybdenum to achieve etching in an acidic environment. Better etching properties.
  • the role of the chelating agent is mainly to chelate the metal ions in the etchant through specific functional groups in its own structure, that is, the copper ions and molybdenum ions formed in the etchant by etching, and reduce the free metal ions in the etching system.
  • the electrode potential difference is also different, and the electrode potential difference between metal copper and metal molybdenum can be controlled by adjusting the content of the inorganic acid, Further, the etching rate ratio of the copper film layer/molybdenum film layer is controlled to obtain a smaller taper angle, and at the same time, the occurrence of molybdenum undercut or molybdenum residue is avoided.
  • the etching system can be kept stable and desired etching characteristics can be obtained.
  • the first inorganic acid may be selected from common inorganic acids such as sulfuric acid, nitric acid, phosphoric acid, and hydrochloric acid, which are not particularly limited in the present invention.
  • the chelating agent is a first organic acid, that is, a carboxylic acid compound, the carboxyl group contained therein can play a strong chelating effect, and at the same time, it also cooperates with the inorganic acid to adjust the etching system pH value.
  • the carboxylic acid compound can be selected from one or more of iminoacetic acid, ethylenediaminetetraacetic acid, citric acid, malic acid, acetic acid, succinic acid, tartaric acid, gluconic acid, glycolic acid, and of course also For any other commonly used carboxylic acids, no further enumeration is given here.
  • the pH of the etchant is set to 4-5 to obtain the best etching characteristics.
  • the etching main agent further includes a buffer and a stabilizer, and the mass percentage content of the buffer in the etching main agent is 0.5%-5%, and a further preferred range is 0.5%-2 %, the mass percentage content of the stabilizer in the main etching agent is 0.5%-5%, and a further preferred range is 0.5%-2%.
  • the buffering agent is a pH buffering agent, which is mainly used to avoid the phenomenon of abnormal etching due to the large fluctuation of the pH of the etching system, and helps to improve the stability of the etching process.
  • the specific components of the buffer are not particularly limited, and a pH buffer commonly used in the art can be selected, usually a weak acid or a weak acid and a strong base salt.
  • the buffer can include acetic acid, sodium acetate, sodium hydrogen phosphate and at least one of sodium borate.
  • the stabilizer usually also includes functional groups (such as carboxyl, silicate, phosphate, etc.) that can play a chelating role, and cooperates with the chelating agent to achieve the chelation of metal ions.
  • the molecule also includes strong electronegativity.
  • the atoms of hydrogen peroxide (such as nitrogen, oxygen, etc.) can quench the hydroxyl radicals generated by the decomposition of hydrogen peroxide, slow down the decomposition rate of hydrogen peroxide, and further maintain the stability of the etching system.
  • the stabilizer is a compound including the aforementioned functional groups and elements.
  • the stabilizer includes at least one of diethylaminepentaacetic acid, sodium silicate, magnesium chloride, tartaric acid, and trisodium phosphate.
  • the etchant further includes an etching auxiliary, specifically, the etching auxiliary includes: a second organic acid and/or a second inorganic acid, an inhibitor and water, the second organic acid and /or the mass percentage content of the second inorganic acid in the etching auxiliary agent is 0-20%, a further preferred range is 4%-10%, and the mass percentage content of the inhibitor in the etching auxiliary agent It is 2%-5%, and a further preferred range is 3%-4%.
  • the specific composition of the second organic acid may be the same as or different from the first organic acid used as a chelating agent in the etching main agent, and the specific composition of the second inorganic acid may be the same as that in the etching main agent.
  • the first inorganic acid is the same or different. According to the actual process requirements, it can only include the organic acid or the second inorganic acid, or both can be included;
  • the inhibitor is an azole compound (a compound containing a five-membered heterocyclic ring structure), such as a substituted or unsubstituted triazole, substituted or unsubstituted benzotriazole, substituted or unsubstituted imidazole, substituted or unsubstituted Unsubstituted benzimidazoles, substituted or unsubstituted pyrazoles, substituted or unsubstituted benzopyrazoles, substituted or unsubstituted thiazoles, and substituted or unsubstituted benzothiazoles, etc.
  • azole compound a compound containing a five-membered heterocyclic ring structure
  • Substitution refers to substituting at least one hydrogen with a hydroxyl group, an amino group, a phenyl group, a biphenyl group, a naphthyl group, or an alkyl group having 1 to 5 carbon atoms.
  • the inhibitor may be selected from at least one of benzotriazole, hydroxybenzotriazole, methylbenzotriazole, aminotriazole, thiazole, and phenylthiazole.
  • the nitrogen atom in the hetero-nitrogen ring has a strong electron donating ability, which can provide electrons to metal atoms, so as to be adsorbed on the metal film layer, forming a barrier film and slowing down the etching rate.
  • the difference in properties between copper and molybdenum there is also a difference in the mitigation effect of the copper film and the molybdenum film. Based on this, a specific structure of inhibitor is added to optimize the effect of the etching taper angle.
  • a supplementary note is that when the concentration of copper ions added to the etchant reaches the threshold, the etching auxiliary is used to supplement the necessary components required in the etchant, and at the same time, it can also play a certain degree of dilution.
  • the concentration of copper ions in the etching system is reduced, so that the etchant can still etch stably and effectively, and the life of the copper-molybdenum etchant composition can be extended.
  • at least the use of the copper-molybdenum etchant composition can be used The service life is extended to 8000ppm (in the present invention, the service life of the etchant used for the copper-molybdenum film layer is defined by the copper ion concentration).
  • the water in the copper-molybdenum etchant composition is deionized water, so as to avoid introducing impurity ions and bring instability to the etching effect of the copper-molybdenum etchant composition.
  • the etching main agent and the etching auxiliary agent may also contain other arbitrary components according to actual process requirements, which are not limited in the present invention.
  • a method for etching a copper-molybdenum film layer includes using the etchant for the copper-molybdenum film layer provided in the above embodiment to perform etching, and specifically includes the following steps: step:
  • a substrate is provided, the copper-molybdenum film layer is formed on the substrate, a patterned photoresist layer is formed on the copper-molybdenum film layer, and the copper-molybdenum film layer comprises a molybdenum film layer and a layer disposed on the molybdenum film a copper film layer on the side away from the substrate;
  • the etching main agent comprises hydrogen peroxide, a chelating agent, a first Inorganic acid and water, the mass percentage content of the chelating agent in the etching main agent is 2%-10%, and the mass percentage content of the first inorganic acid in the etching main agent is 1%- 10%, the mass percentage content of the hydrogen peroxide in the etching main agent is 4%-10%; and
  • the patterned photoresist layer is removed by peeling off, that is, the etching is completed, and a patterned copper-molybdenum film layer is formed.
  • the chelating agent is a first organic acid, and the pH of the etchant is 4-5.
  • the etching main agent further includes a buffer and a stabilizer, the mass percentage content of the buffer in the etching main agent is 0.5%-5%, and the stabilizer is used in the etching The mass percentage in the main agent is 0.5%-5%.
  • the buffer includes at least one of acetic acid, sodium acetate, sodium hydrogen phosphate, and sodium borate
  • the stabilizer includes diethylaminepentaacetic acid, sodium silicate, magnesium chloride, tartaric acid, and trisodium phosphate at least one of the.
  • the following steps are further included:
  • an etching auxiliary agent is added to the etching main agent, and the etching auxiliary agent includes: a second organic acid and/or a second inorganic acid, an inhibitor agent and water, the mass percentage of the second organic acid and/or the second inorganic acid in the etching auxiliary is 0-20%, and the mass percentage of the inhibitor in the etching auxiliary
  • the content is 2%-5%, and the added mass of the etching auxiliary is 4%-10% of the mass of the etching agent before adding.
  • the inhibitor is selected from substituted or unsubstituted triazoles, substituted or unsubstituted benzotriazoles, substituted or unsubstituted imidazoles, substituted or unsubstituted benzimidazoles, substituted or unsubstituted at least one of pyrazoles, substituted or unsubstituted benzopyrazoles, substituted or unsubstituted thiazoles, and substituted or unsubstituted benzothiazoles.
  • the etchant only includes the main etching agent, and as the etching continues, the content of copper ions in the main etching agent increases with the When the content of copper ions in the main etching agent reaches a predetermined threshold, the auxiliary etching agent is added to maintain the stability of etching.
  • the added mass of the etching auxiliary is 4%-10% of the total mass of the etching agent before the addition.
  • the addition amount of the etching auxiliary agent should not be too small, otherwise it will not be able to play an obvious regulating effect; the addition amount of the etching auxiliary agent should not be too large, otherwise the composition of the etching agent before and after adding is too different, resulting in etching effect. There are large fluctuations.
  • the timing of adding the etching auxiliary is determined according to the actual process requirements, and it can be added only once or multiple times.
  • the timing of adding the etching auxiliary is determined according to the content of copper ions in the etching agent.
  • the content of copper ions in the etchant is defined as a threshold value.
  • the number of times of adding the etching auxiliary agent includes at least three times, at least three sub-threshold values are sequentially corresponding.
  • the at least three sub-thresholds are arranged in an arithmetic progression; in the second specific embodiment, considering that the copper ion concentration of the etchant gradually increases, the etching is stable If the control ability of the etchant shows a downward trend, with the increase of the use time of the etchant, the frequency of adding the etchant also needs to be increased, that is, in at least three sub-threshold values ranging from small to large, the difference between the adjacent two sub-thresholds value decreases sequentially.
  • the second threshold while adding a certain amount of etching auxiliary agent, a certain amount of the main etching agent is also added to further prolong the life of the etchant.
  • the second threshold is greater than the aforementioned threshold, and the second threshold includes one or more second sub-thresholds.
  • the copper ion content of the etchant reaches the second threshold, while adding a certain amount of the etching main agent of the etching auxiliary agent, part of the original etchant can also be removed, In order to further optimize the composition of the etchant composition, the effect of prolonging the life of the etchant is achieved.
  • the etching auxiliary is added according to the ratio of 25 g of etching auxiliary/500 g of the total amount of the current etchant.
  • the first copper-molybdenum film layer (molybdenum/copper stacked film layer, corresponding to a thickness of 300/3000 angstroms, hereinafter referred to as film layer 1) and the second copper-molybdenum film layer (molybdenum/copper stacked film layer) were treated with the etchant provided above.
  • film layer 2 corresponding to a thickness of 300/7000 angstroms, hereinafter referred to as film layer 2 to be etched, and the copper ion concentration in the etchant reaches 500ppm, 2000ppm (before the first addition of etching aids), 4000ppm (the second time to add etching Before the auxiliary agent), 6000ppm (before adding the etching auxiliary agent for the third time) and 8000ppm, confirm the etching effect, specifically using the scanning electron microscope to measure the Taper angle, the edge line width loss compared to the photoresist (CD Loss) and Whether there is molybdenum residue, molybdenum undercut phenomenon is confirmed, the results are summarized in the following table 2:
  • Figure 11 shows the result of etching the film layer 1 when the etchant life is 4000ppm, showing the Taper angle is 41.3°, and there is no molybdenum undercut phenomenon, as well as the top view provided in Figure 12. Characterization diagram, no molybdenum residue phenomenon;
  • Figure 15 shows the result of etching the film layer 1 when the etchant life is 6000ppm, showing the Taper angle of 47.5°, and no molybdenum undercut, as well as the top-view topography provided in Figure 16. Characterization diagram, no molybdenum residue phenomenon;
  • the copper-molybdenum film layer is etched by the etchant provided by the present invention, and a small Taper angle can be obtained, which is less than 50°, so as to meet the requirement of high contrast, and at the same time, there is no molybdenum undercut and molybdenum residue that easily lead to bad. phenomenon, which can meet the etching requirements of different film thicknesses.

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Abstract

本发明公开了一种用于铜钼膜层的蚀刻剂与铜钼膜层的蚀刻方法，所述蚀刻剂包括蚀刻主剂，所述蚀刻主剂包括过氧化氢、螯合剂、第一无机酸以及水，所述螯合剂在所述蚀刻主剂中的质量百分含量为2％-10％，所述第一无机酸在所述蚀刻主剂中的质量百分含量为1％-10％，所述过氧化氢在所述蚀刻主剂中的质量百分含量为4％-10％。

Description

用于铜钼膜层的蚀刻剂与铜钼膜层的蚀刻方法 技术领域
本发明涉及显示技术领域，具体涉及一种用于铜钼膜层的蚀刻剂与铜钼膜层的蚀刻方法。
背景技术
基于显示器的大型化以及画质高清化的需求，电信号传输导线需使用电阻率更低的金属作为材料。目前，金属铜因具有较高的电导率，同时价格相对较低，已广泛应用于大尺寸显示器的制备中。但由于铜膜层与玻璃基板的粘附性较差，且铜原子易向氧化硅或者氮化硅膜内进行扩散，所以会在其与玻璃之间增加一层很薄的缓冲层，一般选用钼或者钼合金，即形成铜钼叠层膜层。
对于铜钼叠层膜层，在使用同一蚀刻剂，对化学性质不同的铜膜层以及钼膜层同时进行蚀刻时，易出现蚀刻锥形角不佳，或是两层膜层之间出现钼底切等不良现象，而为了改善此不良，通常采用在蚀刻剂中加入氢氟酸、氟化铵等含有氟离子的添加剂，但会相应地带来如下缺点：首先，含氟的蚀刻废液处理成本高，对环境不友好；其次，由于蚀刻剂中含氟离子，易引发操作人员的健康隐患，更甚造成工安事故；另外，氟离子会对玻璃基板有一定的腐蚀作用，易造成玻璃基板的损伤。因此，亟需开发一种针对该种铜钼叠层膜层的蚀刻剂，以获得更佳的蚀刻效果。
技术问题
本发明提供一种用于铜钼膜层的蚀刻剂与铜钼膜层的蚀刻方法，可获得较好的蚀刻效果。
技术解决方案
为解决上述问题，第一方面，本发明提供了一种用于铜钼膜层的蚀刻剂，所述蚀刻剂包括蚀刻主剂，所述蚀刻主剂包括过氧化氢、螯合剂、第一无机酸以及水；其中，所述螯合剂在所述蚀刻主剂中的质量百分含量为2％-10％，所述第一无机酸在所述蚀刻主剂中的质量百分含量为1％-10％，所述过氧化氢在所述蚀刻主剂中的质量百分含量为4％-10％。
为解决上述问题，第二方面，本发明提供了一种铜钼膜层的蚀刻方法，所述蚀刻方法包括：
提供一基板，所述基板上形成有所述铜钼膜层，所述铜钼膜层上形成有图案化的光阻层，所述铜钼膜层包括钼膜层以及设于所述钼膜层背离所述基板一侧的铜膜层；
提供蚀刻主剂，并使用所述蚀刻主剂对所述图案化的光阻层遮蔽下的所述铜钼膜层进行蚀刻，其中，所述蚀刻主剂包括过氧化氢、螯合剂、第一无机酸以及水，所述螯合剂在所述蚀刻主剂中的质量百分含量为2％-10％，所述第一无机酸在所述蚀刻主剂中的质量百分含量为1％-10％，所述过氧化氢在所述蚀刻主剂中的质量百分含量为4％-10％；以及
剥离去除所述图案化的光阻层。
有益效果
本发明提供了一种用于铜钼膜层的蚀刻剂与铜钼膜层的蚀刻方法，其中，所述蚀刻剂包括蚀刻主剂，所述蚀刻主剂包括过氧化氢、螯合剂、无机酸以及水，所述螯合剂在所述蚀刻主剂中的质量百分含量为2％-10％，所述无机酸在所述蚀刻主剂中的质量百分含量为1％-10％，通过调整螯合剂与无机酸的比例，可获得较小的蚀刻锥形角，以满足显示面板更高对比度的需求，同时，不会出现易导致显示面板不良的膜层底切或是钼残等现象。
附图说明
图1是本发明现有技术中由扫描电子显微镜表征的铜钼膜层蚀刻后出现钼底切现象的微观形貌图；
图2是本发明现有技术中由扫描电子显微镜表征的铜钼膜层蚀刻后出现钼残现象的微观形貌图；
图3是本发明实施例中的由扫描电子显微镜表征的膜层1第一次蚀刻后的截面微观形貌图；
图4是本发明实施例中的由扫描电子显微镜表征的膜层1第一次蚀刻后的表面微观形貌图；
图5是本发明实施例中的由扫描电子显微镜表征的膜层2第一次蚀刻后的 截面微观形貌图；
图6是本发明实施例中的由扫描电子显微镜表征的膜层2第一次蚀刻后的表面微观形貌图；
图7是本发明实施例中的由扫描电子显微镜表征的膜层1第二次蚀刻后的截面微观形貌图；
图8是本发明实施例中的由扫描电子显微镜表征的膜层1第二次蚀刻后的表面微观形貌图；
图9是本发明实施例中的由扫描电子显微镜表征的膜层2第二次蚀刻后的截面微观形貌图；
图10是本发明实施例中的由扫描电子显微镜表征的膜层2第二次蚀刻后的表面微观形貌图；
图11是本发明实施例中的由扫描电子显微镜表征的膜层1第三次蚀刻后的截面微观形貌图；
图12是本发明实施例中的由扫描电子显微镜表征的膜层1第三次蚀刻后的表面微观形貌图；
图13是本发明实施例中的由扫描电子显微镜表征的膜层2第三次蚀刻后的截面微观形貌图；
图14是本发明实施例中的由扫描电子显微镜表征的膜层2第三次蚀刻后的表面微观形貌图；
图15是本发明实施例中的由扫描电子显微镜表征的膜层1第四次蚀刻后的截面微观形貌图；
图16是本发明实施例中的由扫描电子显微镜表征的膜层1第四次蚀刻后的表面微观形貌图；
图17是本发明实施例中的由扫描电子显微镜表征的膜层2第四次蚀刻后的截面微观形貌图；
图18是本发明实施例中的由扫描电子显微镜表征的膜层2第四次蚀刻后 的表面微观形貌图；
图19是本发明实施例中的由扫描电子显微镜表征的膜层1第五次蚀刻后的截面微观形貌图；
图20是本发明实施例中的由扫描电子显微镜表征的膜层1第五次蚀刻后的表面微观形貌图；
图21是本发明实施例中的由扫描电子显微镜表征的膜层2第五次蚀刻后的截面微观形貌图；
图22是本发明实施例中的由扫描电子显微镜表征的膜层2第五次蚀刻后的表面微观形貌图。
本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明中，“示例性”一词用来表示“用作例子、例证或说明”。本发明中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明，给出了以下描述。在以下描述中，为了解释的目的而列出了细节。应当明白的是，本领域普通技 术人员可以认识到，在不使用这些特定细节的情况下也可以实现本发明。在其它实例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本发明的描述变得晦涩。因此，本发明并非旨在限于所示的实施例，而是与符合本发明所公开的原理和特征的最广范围相一致。
如背景技术中所述的，为了满足显示器的大型化以及画质高清化的需求，通常使用具有较高电导率的金属铜作为金属走线材料，但基于铜材料本身的性质，会因铜膜层与玻璃基板的粘附性较差而出现膜层剥离，或是铜原子易向氧化硅或者氮化硅膜内进行扩散而影响显示面板性能，通常在铜膜层下设置一层较薄的钼膜层作为缓冲层以克服上述缺陷。
但是，在使用同一蚀刻剂，对化学性质不同的铜膜层以及钼膜层同时进行蚀刻时，蚀刻过程不易控制，较难得到理想的蚀刻结果，具体表现为如下：
其一，随着显示器的发展，高对比度的显示器越来越受关注，而当阵列基板中栅电极的蚀刻锥形角(Taper角)的角度一定程度地降低时，则栅电极尾段越长，从而遮挡更多的光线，提升明暗对比，即可显著提高显示器的对比度。然而目前所用的铜钼膜层蚀刻剂只能够将Taper角度控制于50-60度之间，无法满足显示器高对比度的需求；
其二，由于金属铜与钼自身化学性质的差异，导致在酸性的蚀刻剂中，金属钼的电极电位要低于金属铜，从而产生电极电位差，那么，在可导电的蚀刻剂溶液中，金属铜与金属钼之间便会形成电化学腐蚀，其中钼作为阳极，铜作为阴极，导致金属钼的蚀刻速率加速。最终，在蚀刻终点时，便会出现钼底切的现象，具体如图1所示，虚线方框处的膜层边缘存在一个明显的小缺角，即为所述的钼底切的现象，这种现象导致显示面板的可靠性一定程度地降低而易引起断线类的画质不良，对产品的良率造成损失；
其三，由于在酸性蚀刻剂中，金属钼会被过氧化氢氧化成二氧化钼或者五氧化二钼，具体反应原理见下式(1)，而前述的两种氧化物在蚀刻剂中的溶解度较差，会残留在玻璃基板上，从而形成钼残，具体如图2所示，可在表面观察到明显的白色团状异物，对此异物进行元素分析，结果主要包括钼元素与氧元素，即为前述的钼的氧化物，而该种氧化钼异物附着于基板表面，则可能引起薄膜晶体管器件中的金属走线之间出现短接，从而导致画面异常。
Mo+2H 2O 2＝MoO 2+2H 2O
2MoO 2+H 2O2＝Mo 2O 5+H 2O
式(1)
对于该现象，现有的应对方案通常为加入一定量的含氟添加剂，例如氢氟酸或氟化铵等。但，该种含氟添加剂会造成一些弊端，首先，含氟的蚀刻废液处理成本高，对环境不友好；其次，由于蚀刻剂中含氟离子，易引发操作人员的健康隐患，更甚造成工安事故；另外，氟离子会对玻璃基板有一定的腐蚀作用，易造成玻璃基板的损伤。
除上述的存在蚀刻效果不佳的问题以外，铜钼蚀刻剂目前仍存在使用寿命较低的问题，主要是因为，随着蚀刻不断地进行，蚀刻剂中铜离子的浓度随之上升，而蚀刻剂中主要的蚀刻成分通常为过氧化氢，当铜离子的浓度达到一定程度后，会剧烈催化过氧化氢分解，产生大量氢气，导致较大的安全隐患，甚至可能引发爆炸；另外，在高铜离子浓度下，铜钼蚀刻剂中的各个有效成分含量发生变化，引起蚀刻特性的改变，从而造成产品异常。基于前述原因，铜钼蚀刻剂的寿命仍然较低，造成制造成本剧增，并且排废增多而污染环境。因此，提高蚀刻剂的寿命对成本降低及环境友好至关重要。
基于上述问题，本发明实施例提供了一种用于铜钼膜层的蚀刻剂，所述蚀刻剂包括蚀刻主剂，所述蚀刻主剂包括过氧化氢、螯合剂、第一无机酸以及水，其中，所述螯合剂在所述蚀刻主剂中的质量百分含量为2％-10％，进一步优选范围为4％-6％，所述第一无机酸在所述蚀刻主剂中的质量百分含量为1％-10％，进一步优选范围为1％-4％。所述过氧化氢在所述蚀刻主剂中的质量百分含量为4％-10％，进一步优选范围为6％-9％。
在本实施例所提供的蚀刻剂中，过氧化氢作为主要的蚀刻成分，在酸性环境下，可与金属铜与钼发生反应而实现蚀刻，同时添加特定比例的螯合剂与无机酸，可实现较佳的蚀刻特性。
具体地，螯合剂的作用主要为通过自身结构中特定的官能团，来螯合蚀刻剂中的金属离子，即经蚀刻作用形成于蚀刻剂中的铜离子与钼离子，降低蚀刻体系中游离的金属离子的浓度，从而抑制金属离子，特别是铜离子对过氧化氢分解的催化作用，进而维持蚀刻体系的稳定；而第一无机酸为蚀刻提供所需的 酸性环境，更重要地，因金属铜与金属钼在酸性蚀刻剂中存在电极电位差，而在不同pH的溶液中，该电极电位差也不同，即可通过调整所述无机酸的含量，控制金属铜与金属钼的电极电位差，进而控制铜膜层/钼膜层的蚀刻速率比，以获得较小的Taper角度，同时避免发生钼底切或钼残的不良。
即，通过调整所述螯合剂与第一无机酸的含量，使得蚀刻体系保持稳定，并获得所需的蚀刻特性。
在一些实施例中，所述第一无机酸可选自硫酸、硝酸、磷酸、盐酸等常用的无机酸，本发明对此不作特殊限定。
在一些实施例中，所述螯合剂为第一有机酸，即为羧酸类化合物，其中包含的羧基基团可起到较强的螯合作用，同时，还协同所述无机酸调节蚀刻体系的pH值。其中所述羧酸类化合物可选自亚氨基乙酸、乙二胺四乙酸、柠檬酸、苹果酸、乙酸、丁二酸、酒石酸、葡萄糖酸、羟乙酸中的一者或多者，当然也可为其他任何常用的羧酸，此处不作更多地列举。
更进一步地，使得所述蚀刻剂的pH值为4-5，以获得最佳的蚀刻特性。
在一些实施例中，所述蚀刻主剂还包括缓冲剂与稳定剂，所述缓冲剂在所述蚀刻主剂中的质量百分含量为0.5％-5％，进一步优选范围为0.5％-2％，所述稳定剂在所述蚀刻主剂中的质量百分含量为0.5％-5％，进一步优选范围为0.5％-2％。
其中，所述缓冲剂为pH缓冲剂，主要作用为避免因蚀刻体系的pH出现较大波动而出现蚀刻异常的现象，有助于提高蚀刻制程的稳定性。所述缓冲剂的具体成分没有特殊限制，选用本领域常用的pH缓冲剂即可，通常为弱酸或弱酸强碱盐，示例性地，所述缓冲剂可包括醋酸、醋酸钠、磷酸氢钠以及硼酸钠中的至少一者。
所述稳定剂通常也包括可起螯合作用的官能团(如羧基、硅酸根、磷酸根等)，协同所述螯合剂实现对金属离子的螯合，同时，分子中还包括电负性较强的原子(如氮、氧等)，可猝灭过氧化氢分解产生的羟基自由基，减缓过氧化氢分解速率，进一步维持蚀刻体系的稳定性。所述稳定剂为包括前述官能团以及元素的化合物，示例性地，所述稳定剂包括二乙胺五乙酸、硅酸钠、氯化镁、酒石酸、磷酸三钠中的至少一者。
在一些实施例中，所述蚀刻剂还包括蚀刻辅剂，具体地，所述蚀刻辅剂包括：第二有机酸和/或第二无机酸、抑制剂以及水，所述第二有机酸和/或第二无机酸在所述蚀刻辅剂中的质量百分含量为0-20％，进一步优选范围为4％-10％，所述抑制剂在所述蚀刻辅剂中的质量百分含量为2％-5％，进一步优选范围为3％-4％。
其中，所述第二有机酸的具体成分可与所述蚀刻主剂中作为螯合剂的第一有机酸相同或相异，所述第二无机酸的具体成分可与所述蚀刻主剂中的第一无机酸相同或相异，根据实际的工艺需求，可仅包括有机酸或第二无机酸，也可两者均包括；
所述抑制剂为唑类化合物(包含杂氮五元环结构的化合物)，例如可以为取代或未取代的三唑、取代或未取代的苯并三唑、取代或未取代的咪唑、取代或未取代的苯并咪唑、取代或未取代的吡唑、取代或未取代的苯并吡唑、取代或未取代的噻唑以及取代或未取代的苯并噻唑等，需要解释的是，此处的取代是指将至少一个氢取代为羟基、胺基、苯基、联苯基、萘基或碳原子数1-5的烷基。示例性地，所述抑制剂可选自苯并三唑、羟基苯并三唑、甲基苯并三唑、氨基三唑、噻唑、苯基噻唑中的至少一者。
在上述的唑类化合物中，杂氮环中的氮原子具有较强的给电子能力，可提供电子给金属原子，从而吸附在金属膜层上，形成一道阻碍膜，起到减缓蚀刻速率的作用，然而，基于铜钼之间性质的差异，对铜膜层与钼膜层的减缓作用也存在差异，以此作为基础，加入特定结构的抑制剂，达到优化蚀刻锥形角的效果。
补充说明地是，所述蚀刻辅剂添加于所述蚀刻剂中的铜离子浓度到达阈值时，用于补充蚀刻剂中所需的必要成分，同时也能起到一定程度的稀释作用，适当地降低蚀刻体系中铜离子的浓度，从而使得蚀刻剂仍能稳定且有效地进行蚀刻，实现铜钼蚀剂组合物寿命的延长，通常情况下，至少可将所述铜钼蚀剂组合物的使用寿命延长至8000ppm(本发明中以铜离子浓度定义用于铜钼膜层的蚀刻剂的使用寿命)。
补充说明地是，所述铜钼蚀剂组合物中的水为去离子水，以避免引入杂离子，而给铜钼蚀剂组合物的蚀刻作用带来不稳定性。
另外，在上述实施例中，除了已描述的必要成分外，所述蚀刻主剂以及蚀刻辅剂中还可根据实际工艺需求包含其它任意的成分，本发明对此不做限定。
在本发明的另一实施例中，还提供了一种铜钼膜层的蚀刻方法，所述蚀刻方法包括使用上述实施例所提供的用于铜钼膜层的蚀刻剂进行蚀刻，具体包括如下步骤：
提供一基板，所述基板上形成有所述铜钼膜层，所述铜钼膜层上形成有图案化的光阻层，所述铜钼膜层包括钼膜层以及设于所述钼膜层背离所述基板一侧的铜膜层；
提供蚀刻主剂，并使用所述蚀刻主剂对所述图案化的光阻层遮蔽下的所述铜钼膜层进行蚀刻，其中，所述蚀刻主剂包括过氧化氢、螯合剂、第一无机酸以及水，所述螯合剂在所述蚀刻主剂中的质量百分含量为2％-10％，所述第一无机酸在所述蚀刻主剂中的质量百分含量为1％-10％，所述过氧化氢在所述蚀刻主剂中的质量百分含量为4％-10％；以及
剥离去除所述图案化的光阻层，即完成蚀刻，形成图案化的铜钼膜层。
在一些实施例中，所述螯合剂为第一有机酸，所述蚀刻剂的pH值为4-5。
在一些实施例中，所述蚀刻主剂还包括缓冲剂与稳定剂，所述缓冲剂在所述蚀刻主剂中的质量百分含量为0.5％-5％，所述稳定剂在所述蚀刻主剂中的质量百分含量为0.5％-5％。
在一些实施例中，所述缓冲剂包括醋酸、醋酸钠、磷酸氢钠以及硼酸钠中的至少一者，所述稳定剂包括二乙胺五乙酸、硅酸钠、氯化镁、酒石酸以及磷酸三钠中的至少一者。
在一些实施例中，在使用所述蚀刻主剂对所述图案化的光阻层遮蔽下的所述铜钼膜层进行蚀刻时还包括以下步骤：
持续检测所述蚀刻主剂中的铜离子的含量；
当所述蚀刻主剂中的所述铜离子的含量到达阈值时，在所述蚀刻主剂中加入蚀刻辅剂，所述蚀刻辅剂包括：第二有机酸和/或第二无机酸、抑制剂以及水，所述第二有机酸和/或第二无机酸在所述蚀刻辅剂中的质量百分含量为0-20％，所述抑制剂在所述蚀刻辅剂中的质量百分含量为2％-5％，所述蚀刻辅剂的加入质量为加入前蚀刻剂质量的4％-10％。
在一些实施例中，所述抑制剂选自取代或未取代的三唑、取代或未取代的苯并三唑、取代或未取代的咪唑、取代或未取代的苯并咪唑、取代或未取代的吡唑、取代或未取代的苯并吡唑、取代或未取代的噻唑以及取代或未取代的苯并噻唑中的至少一者。
具体地，在使用所述蚀刻剂对铜钼膜层进行蚀刻的初始阶段，所述蚀刻剂仅包括所述蚀刻主剂，随着蚀刻的持续进行，所述蚀刻主剂中铜离子的含量随之升高，当所述蚀刻主剂中的铜离子含量到达预定的阈值时，加入所述蚀刻辅剂，以维持蚀刻的稳定性。
在加入所述蚀刻辅剂时，所述蚀刻辅剂的加入质量为加入前所述蚀刻剂总质量的4％-10％。此处，所述蚀刻辅剂的添加量不宜过小，否则无法起到明显的调节作用；所述蚀刻辅剂的添加量也不宜过，否则添加前后蚀刻剂组成差异过大，而造成蚀刻效果出现较大的波动。
所述蚀刻辅剂的加入时机根据实际工艺需求而定，可仅添加一次也可多次添加，所述蚀刻辅剂的添加时机依据所述蚀刻剂中铜离子的含量而定，此处，将所述蚀刻辅剂添加时所述蚀刻剂中铜离子的含量定义为阈值。
当所述蚀刻辅剂的添加次数至少包括三次时，依次对应了至少三个子阈值。在第一种具体的实施方式中，所述至少三个子阈值呈等差数列排布；在第二种具体的实施方式中，考虑到随蚀刻剂的铜离子浓度逐步地升高，对蚀刻稳定性的控制能力呈下降趋势，则随蚀刻剂使用时间的增长，添加蚀刻辅剂频率也需提升，即在数值大小由小至大的至少三个子阈值中，相邻两个子阈值之间的差值依次降低。
在一些实施例中，考虑到当所述蚀刻剂的铜离子含量达到一定程度后，仅仅添加所述蚀刻辅剂也难以继续维持蚀刻制程的稳定性，则当所述蚀刻剂的铜离子含量到达第二阈值时，在添加一定量的蚀刻辅剂的同时，一并添加一定量的所述蚀刻主剂，以进一步延长所述蚀刻剂的寿命。所述第二阈值大于前述的阈值，所述第二阈值包括一个或多个第二子阈值。
进一步地，在一些实施例中，当所述蚀刻剂的铜离子含量到达第二阈值时，在添加一定量的蚀刻辅剂的蚀刻主剂的同时，还可排走部分原有的蚀刻剂，以进一步优化蚀刻剂组合物的组成，而达到延长所述蚀刻剂的寿命的效果。
以下给出具体的实施例进行进一步地解释说明。
提供一种用于铜钼膜层的蚀刻剂，包括蚀刻主剂与蚀刻辅剂，具体组成见下表一所示：
Figure PCTCN2020140637-appb-000001
表一
其中，分别在所述蚀刻剂中铜离子含量在2000ppm、4000ppm以及6000ppm时，按照25g蚀刻辅剂/500g当前蚀刻剂总量的比例进行蚀刻辅剂的添加。
使用上述所提供的蚀刻剂分别对第一铜钼膜层(钼/铜堆叠膜层，对应厚度300/3000埃，以下简称膜层1)以及第二铜钼膜层(钼/铜堆叠膜层，对应厚度300/7000埃，以下简称膜层2)进行蚀刻，且分别在所述蚀刻剂中铜离子浓度达500ppm，2000ppm(第一次添加蚀刻辅剂前)，4000ppm(第二次添加蚀刻辅剂前)，6000ppm(第三次添加蚀刻辅剂前)以及8000ppm时，进行蚀刻效果的确认，具体使用扫描电子显微镜对Taper角，相较光阻的边缘线宽损失量(CD Loss)以及是否存在钼残，钼底切现象进行确认，结果汇总如下表二：
Figure PCTCN2020140637-appb-000002
表二
其中，膜层1在蚀刻剂寿命为500ppm时进行蚀刻的结果见图3提供的截面形貌表征图，显示Taper角为46.4°，且无钼底切现象，以及图4提供的俯视视角下的形貌表征图，未见钼残现象；
膜层2在蚀刻剂寿命为500ppm时进行蚀刻的结果见图5提供的截面形貌表征图，显示Taper角为43.0°，且无钼底切现象，以及图6提供的俯视视角下的形貌表征图，未见钼残现象；
膜层1在蚀刻剂寿命为2000ppm时进行蚀刻的结果见图7提供的截面形貌表征图，显示Taper角为38.1°，且无钼底切现象，以及图8提供的俯视视角下的形貌表征图，未见钼残现象；
膜层2在蚀刻剂寿命为2000ppm时进行蚀刻的结果见图9提供的截面形貌表征图，显示Taper角为38.4°，且无钼底切现象，以及图10提供的俯视视角下的形貌表征图，未见钼残现象；
膜层1在蚀刻剂寿命为4000ppm时进行蚀刻的结果见图11提供的截面形貌表征图，显示Taper角为41.3°，且无钼底切现象，以及图12提供的俯视视角下的形貌表征图，未见钼残现象；
膜层2在蚀刻剂寿命为4000ppm时进行蚀刻的结果见图13提供的截面形貌表征图，显示Taper角为43.9°，且无钼底切现象，以及图14提供的俯视视角下 的形貌表征图，未见钼残现象；
膜层1在蚀刻剂寿命为6000ppm时进行蚀刻的结果见图15提供的截面形貌表征图，显示Taper角为47.5°，且无钼底切现象，以及图16提供的俯视视角下的形貌表征图，未见钼残现象；
膜层2在蚀刻剂寿命为6000ppm时进行蚀刻的结果见图17提供的截面形貌表征图，显示Taper角为41.3°，且无钼底切现象，以及图18提供的俯视视角下的形貌表征图，未见钼残现象；
膜层1在蚀刻剂寿命为8000ppm时进行蚀刻的结果见图19提供的截面形貌表征图，显示Taper角为40.5°，且无钼底切现象，以及图20提供的俯视视角下的形貌表征图，未见钼残现象；
膜层2在蚀刻剂寿命为8000ppm时进行蚀刻的结果见图21提供的截面形貌表征图，显示Taper角为29.9°，且无钼底切现象，以及图22提供的俯视视角下的形貌表征图，未见钼残现象。
另，上述的CD Loss均符合管控规格0.8±0.2μm，不会造成其它不良。
综上，由本发明提供的蚀刻剂对铜钼膜层进行蚀刻，可获得较小的Taper角，均小于50°，以满足高对比度的需求，同时未见易导致不良的钼底切与钼残现象，可满足不同膜厚的蚀刻需求。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。
以上对本发明实施例所提供的一种用于铜钼膜层的蚀刻剂与铜钼膜层的蚀刻方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (20)

  1. 一种用于铜钼膜层的蚀刻剂，其中，所述蚀刻剂包括蚀刻主剂，所述蚀刻主剂包括过氧化氢、螯合剂、第一无机酸以及水；其中，所述螯合剂在所述蚀刻主剂中的质量百分含量为2％-10％，所述第一无机酸在所述蚀刻主剂中的质量百分含量为1％-10％，所述过氧化氢在所述蚀刻主剂中的质量百分含量为4％-10％。
  2. 如权利要求1所述的用于铜钼膜层的蚀刻剂，其中，所述螯合剂为第一有机酸。
  3. 如权利要求2所述的用于铜钼膜层的蚀刻剂，其中，所述第一有机酸选自亚氨基乙酸、乙二胺四乙酸、柠檬酸、苹果酸、乙酸、丁二酸、酒石酸、葡萄糖酸、羟乙酸中的至少一者。
  4. 如权利要求1所述的用于铜钼膜层的蚀刻剂，其中，所述第一无机酸选自硫酸、硝酸、磷酸、盐酸中的至少一者。
  5. 如权利要求1所述的用于铜钼膜层的蚀刻剂，其中，所述蚀刻剂的pH值为4-5。
  6. 如权利要求1所述的用于铜钼膜层的蚀刻剂，其中，所述蚀刻主剂还包括缓冲剂与稳定剂，所述缓冲剂在所述蚀刻主剂中的质量百分含量为0.5％-5％，所述稳定剂在所述蚀刻主剂中的质量百分含量为0.5％-5％。
  7. 如权利要求6所述的用于铜钼膜层的蚀刻剂，其中，所述缓冲剂在所述蚀刻主剂中的质量百分含量为0.5％-2％，所述稳定剂在所述蚀刻主剂中的质量百分含量为0.5％-2％。
  8. 如权利要求6所述的用于铜钼膜层的蚀刻剂，其中，所述缓冲剂包括醋酸、醋酸钠、磷酸氢钠以及硼酸钠中的至少一者。
  9. 如权利要求6所述的用于铜钼膜层的蚀刻剂，其中，所述稳定剂包括二乙胺五乙酸、硅酸钠、氯化镁、酒石酸以及磷酸三钠中的至少一者。
  10. 如权利要求1所述的用于铜钼膜层的蚀刻剂，其中，所述蚀刻剂还包括蚀刻辅剂，所述蚀刻辅剂包括：第二有机酸和/或第二无机酸、抑制剂以及水。
  11. 如权利要求10所述的用于铜钼膜层的蚀刻剂，其中，所述第二有机酸 和/或第二无机酸在所述蚀刻辅剂中的质量百分含量为0-20％，所述抑制剂在所述蚀刻辅剂中的质量百分含量为2％-5％。
  12. 如权利要求11所述的用于铜钼膜层的蚀刻剂，其中，所述第二有机酸和/或第二无机酸在所述蚀刻辅剂中的质量百分含量为4％-10％，所述抑制剂在所述蚀刻辅剂中的质量百分含量为3％-4％。
  13. 如权利要求10所述的用于铜钼膜层的蚀刻剂，其中，所述抑制剂为唑类化合物。
  14. 如权利要求13所述的用于铜钼膜层的蚀刻剂，其中，所述唑类化合物选自取代或未取代的三唑、取代或未取代的苯并三唑、取代或未取代的咪唑、取代或未取代的苯并咪唑、取代或未取代的吡唑、取代或未取代的苯并吡唑、取代或未取代的噻唑以及取代或未取代的苯并噻唑中的至少一者。
  15. 如权利要求13所述的用于铜钼膜层的蚀刻剂，其中，所述唑类化合物选自苯并三唑、羟基苯并三唑、甲基苯并三唑、氨基三唑、噻唑、苯基噻唑中的至少一者。
  16. 一种铜钼膜层的蚀刻方法，其中，所述蚀刻方法包括：
    提供一基板，所述基板上形成有所述铜钼膜层，所述铜钼膜层上形成有图案化的光阻层，所述铜钼膜层包括钼膜层以及设于所述钼膜层背离所述基板一侧的铜膜层；
    提供蚀刻主剂，并使用所述蚀刻主剂对所述图案化的光阻层遮蔽下的所述铜钼膜层进行蚀刻，其中，所述蚀刻主剂包括过氧化氢、螯合剂、第一无机酸以及水，所述螯合剂在所述蚀刻主剂中的质量百分含量为2％-10％，所述第一无机酸在所述蚀刻主剂中的质量百分含量为1％-10％，所述过氧化氢在所述蚀刻主剂中的质量百分含量为4％-10％；以及
    剥离去除所述图案化的光阻层。
  17. 如权利要求16所述的铜钼膜层的蚀刻方法，其中，在使用所述蚀刻主剂对所述图案化的光阻层遮蔽下的所述铜钼膜层进行蚀刻时还包括以下步骤：
    持续检测所述蚀刻主剂中的铜离子的含量；
    当所述蚀刻主剂中的所述铜离子的含量到达阈值时，在所述蚀刻主剂中加入蚀刻辅剂，所述蚀刻辅剂包括：第二有机酸和/或第二无机酸、抑制剂以及 水，所述第二有机酸和/或第二无机酸在所述蚀刻辅剂中的质量百分含量为0-20％，所述抑制剂在所述蚀刻辅剂中的质量百分含量为2％-5％，所述蚀刻辅剂的加入质量为加入前蚀刻剂质量的4％-10％。
  18. 如权利要求17所述的铜钼膜层的蚀刻方法，其中，所述阈值包括至少三个子阈值。
  19. 如权利要求18所述的铜钼膜层的蚀刻方法，其中，所述至少三个所述子阈值的数值大小呈等差数列排布。
  20. 如权利要求18所述的铜钼膜层的蚀刻方法，其中，在所述至少三个子阈值中，相邻两个所述子阈值的差值随子阈值的增大而减小。
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