WO2022095005A1 - 一种高亮度、色温可调的固态照明光源 - Google Patents

一种高亮度、色温可调的固态照明光源 Download PDF

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WO2022095005A1
WO2022095005A1 PCT/CN2020/127403 CN2020127403W WO2022095005A1 WO 2022095005 A1 WO2022095005 A1 WO 2022095005A1 CN 2020127403 W CN2020127403 W CN 2020127403W WO 2022095005 A1 WO2022095005 A1 WO 2022095005A1
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ceramic plate
fluorescent ceramic
laser
solid
color temperature
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PCT/CN2020/127403
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French (fr)
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陈浩
张乐
康健
邵岑
申冰磊
张永丽
邱凡
罗泽
甄方正
李延彬
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新沂市锡沂高新材料产业技术研究院有限公司
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Priority to PCT/CN2020/127403 priority Critical patent/WO2022095005A1/zh
Publication of WO2022095005A1 publication Critical patent/WO2022095005A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Definitions

  • the invention relates to the field of lighting, in particular to a solid-state lighting source with high brightness and adjustable color temperature.
  • phosphors have been widely promoted and applied.
  • phosphors must withstand high power density excitation.
  • most of the phosphor packaging materials are silica gel or epoxy resin; when the LD chip radiates blue light with high lumen density, due to the low thermal conductivity of silica gel or epoxy resin, the waste heat generated by the light conversion process cannot be quickly released, causing local High temperature, which will lead to quenching of the phosphor powder, reduce the efficiency of fluorescence conversion, lead to a decrease in luminous flux, and in severe cases, lead to carbonization of such light conversion materials.
  • Fluorescent ceramic materials have the advantages of high thermal conductivity, good mechanical and mechanical properties, various types of luminescent ions, uniform doping in a wide concentration range, and flexible structural design, which can solve the problems of thermal quenching and light saturation.
  • Patent 1 proposes a light source structure of LED and LD mixed lighting.
  • the LED is cheap and the brightness of the laser light source is high. While each has its own advantages, the cost of the entire lighting unit is also reduced.
  • this patent obviously has the following technical problems:
  • both emission light sources are designed to emit surface light sources (the LED itself emits surface light sources, and it is difficult to become a point light source).
  • Reference 2 (Fabrication design for a high-quality laser diode-based ceramic converter for a laser headlamp application) uses a pore-forming agent to introduce pores, and the color temperature of the light source is controlled by changing the pore content.
  • the porosity is easy to control, but the size of the pores is quite different.
  • the fluorescent ceramic itself contains Al 2 O 3 in the second phase, and it is difficult to accurately control the ratio between the three to achieve the desired color temperature of the light source.
  • the present invention adopts the package structure to integrate the heat sinks of the LED and the LD chip, and then the mixed pump source excites the same fluorescent ceramic plate to obtain a high-brightness solid-state lighting source; ), the technical scheme of LED supplementing the blue light from the bottom surface of the fluorescent ceramic plate to realize the uniform distribution of the color temperature of the lighting source. That is, the laser diode side-pumps the fluorescence conversion plate to obtain a better transmission depth, so that the blue light can be fully utilized to avoid laser leakage; at the same time, the uniform emission of fluorescence is also obtained on the surface of the fluorescent plate, and then the light-emitting diode is used to fill the light. Then, a white light source with uniform distribution of spatial chromaticity can be obtained; at the same time, a solid-state lighting source with different color temperature and color coordinates can be obtained by controlling the output power of the LED chip.
  • a solid-state lighting source with high brightness and adjustable color temperature characterized in that it includes a laser, a fluorescent ceramic plate, a base, a light guide layer, and an LED chip; wherein, a U-shaped groove is arranged in the center of the base, and the laser is fixed in the concave The left side of the groove is placed on the left end surface of the fluorescent ceramic plate. The right end surface and front and rear surfaces of the fluorescent ceramic plate are closely attached to the substrate. The LED chip is attached to the bottom of the groove of the substrate. The LED chip and the lower bottom surface of the fluorescent ceramic plate A light guide layer is arranged in the middle.
  • the laser is a blue-light semiconductor laser
  • the output wavelength is 440-460 nm
  • the blue-light output power is 2-20W.
  • the fluorescent ceramic plate is a Ce-doped YAG (Y 3 Al 5 O 12 ) fluorescent ceramic, the Ce doping concentration is 0.01-0.1 at. %, and the thickness is 0.8-1.2 mm.
  • the linear transmittance of the fluorescent ceramic plate at 800 nm is 80.0-84.4%.
  • the average color temperature on the surface of the fluorescent ceramic plate is 3750-8000K, and the maximum luminous flux is 960-6000lm.
  • the light guide layer is one of transparent silicone grease or dichroic mirror.
  • the emission wavelength of the LED chip is 440-460 nm, and the output blue light power is 2-10W.
  • the laser emits blue light and enters the fluorescent ceramic plate from the left end face of the fluorescent ceramic plate; the fluorescent ceramic plate fully absorbs high-power blue light and emits yellow light, which is evenly distributed on its upper surface; the blue light emitted by the LED chip passes through the guide After the light layer, part of it is absorbed and converted into yellow light by the fluorescent ceramic plate, and the rest is mixed with the yellow light through the fluorescent ceramic plate to form white light with uniform chromaticity.
  • the power of the LED chip more blue light can pass through, thereby changing the color temperature.
  • the present invention has the following beneficial effects:
  • the transmissive lighting structure is widely used in the laser lighting system, that is, the blue light LD excites the fluorescent ceramic on the front, and the blue light spot is concentrated in the central area (caused by the high power density of the laser penetrating the fluorescent ceramic); while the reflective lighting structure , there will be a significant laser blue spot on the upper surface of the fluorescent ceramic (caused by the reflection of the fluorescent ceramic surface).
  • the invention is based on a transmission illumination scheme, and uses a laser diode to pump from the end face of the fluorescent ceramic to avoid blue light spots on the upper surface of the fluorescent ceramic; at the same time, pumping from the end face can obtain a better transmission depth, so that the blue light of the LD can be fully converted into yellow light
  • the light is evenly distributed on the upper surface of the fluorescent ceramic, and mixed with the blue LED to form a light source with uniform color temperature distribution.
  • the white light source of laser lighting is mostly a single color temperature light source.
  • the present invention can obtain mixed lighting sources (4500K-7500K) with different color temperatures, solve the problem of single color temperature of the laser white light source, and at the same time can effectively reduce the cost of using multiple lasers as excitation sources and optical path design issues.
  • the new packaging solution of this patent integrates LED and LD together, which is greatly beneficial to miniaturization and cost reduction of light source.
  • FIG. 1 is a front view of a solid-state lighting source with high brightness and adjustable color temperature according to the present invention
  • FIG. 2 is a top view of a solid-state lighting source with high brightness and adjustable color temperature according to the present invention
  • FIG. 3 is a light path diagram of a solid-state lighting source with high brightness and adjustable color temperature according to the present invention.
  • the center of the substrate 30 is provided with a U-shaped groove, and the laser 10 is fixed on the left side of the groove side, placed on the left end face of the fluorescent ceramic plate 20, the right end face and front and rear surfaces of the fluorescent ceramic plate 20 are close to the substrate 30, the LED chip 50 is attached to the bottom of the groove of the substrate 30, and the LED chip 50 is connected to the fluorescent ceramic plate 30.
  • a light guide layer 40 is disposed in the middle of the lower bottom surface of the board 20 .
  • the light guide layer 40 is transparent silicone grease.
  • the laser 10 is a blue semiconductor laser.
  • the output wavelength of the laser 10 is 440nm, and the output power of blue light is 2W.
  • the fluorescent ceramic plate 20 is a Ce-doped YAG fluorescent ceramic; wherein the Ce3+ doping concentration is 0.1 at%, the fluorescent ceramic plate has a thickness of 0.8 mm, a width of 3 mm, a length of 10 mm, a linear transmittance of 80.0% at 800 nm, and a smooth surface. deal with.
  • the emission wavelength of the LED chip 50 is 440 nm, and the output blue light power is 2W.
  • the laser 10 emits blue light, which enters the fluorescent ceramic plate 20 from the left end face of the fluorescent ceramic plate 20; the fluorescent ceramic plate 20 fully absorbs high-power blue light and emits yellow light, which is evenly distributed on its upper surface; LED chips After passing through the light guide layer 40, part of the blue light emitted by 50 is absorbed and converted into yellow light by the fluorescent ceramic plate 20, and the rest is mixed with the yellow light through the fluorescent ceramic plate 20 to form white light with uniform chromaticity.
  • the operating temperature of the fluorescent ceramic plate 20 is 38°C, the average color temperature on the upper surface is 4265K, and the luminous flux is 675lm;
  • the operating temperature of the fluorescent ceramic plate 20 is 42°C, the average color temperature on the upper surface is 5540K, and the luminous flux is 782lm;
  • the output blue light power of the laser 10 is 2W
  • the blue light power output by the LED chip 50 is 2W
  • the operating temperature of the fluorescent ceramic plate 20 is 48°C
  • the average color temperature on the upper surface is 8000K
  • the luminous flux is as high as 960lm.
  • the color temperature of the solid-state lighting source can be adjusted within the range of 4265-8000K by adjusting the output power of the LED.
  • the center of the substrate 30 is provided with a U-shaped groove, and the laser 10 is fixed on the left side of the groove side, placed on the left end face of the fluorescent ceramic plate 20, the right end face and front and rear surfaces of the fluorescent ceramic plate 20 are close to the substrate 30, the LED chip 50 is attached to the bottom of the groove of the substrate 30, and the LED chip 50 is connected to the fluorescent ceramic plate 30.
  • a light guide layer 40 is disposed in the middle of the lower bottom surface of the board 20 .
  • the light guide layer 40 is a dichroic mirror.
  • the laser 10 is a blue semiconductor laser.
  • the output wavelength of the laser 10 is 460nm, and the output power of blue light is 20W.
  • the fluorescent ceramic plate 20 is a Ce-doped YAG fluorescent ceramic; wherein, the Ce3+ doping concentration is 0.01 at%, the fluorescent ceramic plate 20 has a thickness of 1.2 mm, a width of 20 mm, a length of 20 mm, and a linear transmittance of 84.4% at 800 nm. smooth processing;
  • the emission wavelength of the LED chip 50 is 460 nm, and the output blue light power is 10W.
  • the light guide layer 40 is highly transparent at 440-480 nm, and highly reflective at 500-800 nm.
  • the laser 10 emits blue light, which enters the fluorescent ceramic plate 20 from the left end face of the fluorescent ceramic plate 20; the fluorescent ceramic plate 20 fully absorbs high-power blue light and emits yellow light, which is evenly distributed on its upper surface; the LED chip 50 emits After passing through the light guide layer 40, part of the blue light is absorbed and converted into yellow light by the fluorescent ceramic plate 20, and the rest is mixed with the yellow light through the fluorescent ceramic plate 20 to form white light with uniform chromaticity.
  • the output blue light power of the laser 10 is 2W and the blue light power outputted by the LED chip 50 is 0.5W
  • the operating temperature of the fluorescent ceramic plate 20 is 32°C
  • the average color temperature on the upper surface is 4320K
  • the luminous flux is 745lm
  • the two-phase color is adopted.
  • the mirror Compared with transparent silica gel, the mirror has higher light utilization rate; when the output blue light power of the laser 10 is 20W and the blue light power outputted by the LED chip 50 is 1W, the operating temperature of the fluorescent ceramic plate 20 is 82°C, and the average color temperature on the upper surface is 3750K , the luminous flux is 5250lm; when the output blue light power of the laser 10 is 20W and the output blue light power of the LED chip 50 is 5W, the operating temperature of the fluorescent ceramic plate 20 is 90°C, the average color temperature on the upper surface is 4890K, and the luminous flux is 5744lm; when the laser When the output blue light power of 10 is 20W, and the blue light power output of LED chip 50 is 10W, the operating temperature of the fluorescent ceramic plate 20 is 142° C., the fluorescent ceramic plate 20 has a certain degree of thermal quenching, and the average color temperature on the upper surface is 6250K.
  • the luminous flux is up to 6000lm.

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Abstract

一种高亮度、色温可调的固态照明光源，属于照明领域，采用封装结构将LED芯片（50）和激光器（10）的热沉集成在一起，随后混合泵浦源激发同一片荧光陶瓷板（20），来获得高亮度固态照明光源；并采用激光器（10）端面泵浦(透射式照明结构)、LED芯片（50）从荧光陶瓷板（20）底面补蓝光的技术方案，来实现照明光源色温的均匀分布。即激光器（10）侧面泵浦荧光陶瓷板（20），来获得比较好的透射深度，使蓝光得到充分利用，避免激光泄露；同时在荧光陶瓷板（20）的表面也获得均匀发射的荧光，再使用LED芯片（50）来进行补光，进而获得空间色度均匀分布的白光光源；同时可以通过控制LED芯片（50）的输出功率来获得不同色温和色坐标的固态照明光源。

Description

一种高亮度、色温可调的固态照明光源 技术领域
本发明涉及照明领域，尤其涉及一种高亮度、色温可调的固态照明光源。
背景技术
目前，在较小功率激光照明和大功率LED照明领域，荧光粉得到普遍推广和应用。为了获得高流明密度固体光源，荧光粉必须承受高功率密度激发。众所周知，荧光粉封装材料多为硅胶或环氧树脂；当LD芯片辐射出高流明密度蓝光，由于硅胶或环氧树脂的热导率较低，导致光转换过程产生的废热不能快速释放，引起局部高温，这将导致荧光粉度猝灭，降低荧光转化的效率，导致光通量下降，严重时会导致此类光转换材料的碳化。荧光陶瓷材料，具有热导率高、机械力学性能好、发光离子多种类、宽浓度范围均匀掺杂、结构设计灵活等优势，可以解决热猝灭和光饱和问题。
在现有采用荧光陶瓷作为光转换材料的激光照明系统中，为了提高激光照明的亮度，通常采用与LED类似的方式，利用激光光束较为集中的特点，将多个激光光源所发出的光线汇聚到同一个点，以达到较小的发光面积和较高的亮度的要求。如专利1(CN201820469119.7)提出一种LED和LD混合照明的光源结构，LED价格便宜，激光光源亮度高，各取所长的同时也降低了整个照明单元的成本。但此专利明显存在以下技术问题：
(1)将激光器置于荧光陶瓷的上表面的反射式激光照明结构存在明显的激光蓝斑；业界很难解决这一问题。
(2)激光器从上表面激发陶瓷后，为点光源发射；LED从底面激发，为面光源发射；两者再进行混光，会导致照明光源的色温分布极其不均匀，光源应用领域严重受限。因此，需要进一步优化，将两种发射光源均设计为面光源发射(LED本身为面光源发射，很难变成点光源)。
(3)LED与LD这两个激发源距离较远，需要单独进行散热。
另外，在高功率激光照明系统中，通过材料本身来控制光源色温，不仅成本高，难度大，而且实现的可能性极低。例如文献1(High power laser-driven ceramic phosphor plate for outstanding efficient white light conversion in application of automotive lighting)通过提高荧光陶瓷中掺杂的发光离子的浓度，提高对蓝光的吸收，避免出现“蓝斑”现象；但如果发光离子浓度太高，又会使蓝光含量太低，会出现“黄区”现象。文献2(Fabrication design for  a high-quality laser diode-based ceramic converter for a laser headlamp application)使用造孔剂引入气孔，通过改变气孔含量来控制光源色温。但气孔率容易控制，但气孔尺寸却大不相同；同时该荧光陶瓷中本身就含有第二相的Al 2O 3成分，很难准确控制三者之间的比例以达到所需的光源色温。
发明内容
因此，本发明采用封装结构将LED和LD芯片的热沉集成在一起，随后混合泵浦源激发同一片荧光陶瓷板，来获得高亮度固态照明光源；并采用LD端面泵浦(透射式照明结构)、LED从荧光陶瓷板底面补蓝光的技术方案，来实现照明光源色温的均匀分布。即激光二极管侧面泵浦荧光转换板，来获得比较好的透射深度，使蓝光得到充分利用，避免激光泄露；同时在荧光板的表面也获得均匀发射的荧光，再使用发光二极管来进行补光，进而获得空间色度均匀分布的的白光光源；同时可以通过控制LED芯片的输出功率来获得不同色温和色坐标的固态照明光源。
本发明的技术方案如下：
一种高亮度、色温可调的固态照明光源，其特征在于，包括激光器、荧光陶瓷板、基底、导光层、LED芯片；其中，基底中心设有U型凹槽，所述激光器固定在凹槽左侧，放置在荧光陶瓷板的左端面，所述荧光陶瓷板右端面、前后表面紧贴基底，所述LED芯片贴合在基底凹槽底部，所述LED芯片与荧光陶瓷板的下底面中间设置导光层。
优选的，所述激光器为蓝光半导体激光器，输出波长为440～460nm，蓝光输出功率为2～20W。
优选的，所述荧光陶瓷板为Ce掺杂的YAG(Y 3Al 5O 12)荧光陶瓷，Ce掺杂浓度为0.01～0.1at.％，厚度为0.8～1.2mm。
优选的，所述荧光陶瓷板在800nm直线透过率为80.0～84.4％。
优选的，所述荧光陶瓷板上表面处的平均色温为3750～8000K，最高光通量为960～6000lm。
优选的，所述导光层为透明硅脂或二向色镜中的一种。
优选的，所述LED芯片的发射波长为440～460nm，输出的蓝光功率为2～10W。
优选的，所述激光器发射蓝光，从荧光陶瓷板的左端面进入荧光陶瓷板；荧光陶瓷板充分吸收高功率蓝光并发出黄光，在其上表面均匀分布；LED芯片发出的蓝光，穿过导光层后，部分被荧光陶瓷板吸收转换为黄光，其余部分则穿过荧光陶瓷板与黄光进行混合，形成色度均匀的白光。改变LED芯片的功率，可以有更多的蓝光透过，进而改变色温。
与现有技术相比，本发明具有以下有益效果：
1.目前在激光照明系统广泛使用透射式照明结构，即蓝光LD正面激发荧光陶瓷，会出现蓝光光斑集中在中心区的问题(激光器功率密度太高穿透荧光陶瓷导致)；而反射式照明结构，荧光陶瓷上表面会出现显著的激光蓝斑(荧光陶瓷表面反射导致)。本发明基于透射式照明方案，采用激光二极管从荧光陶瓷端面泵浦，避免了荧光陶瓷上表面出现蓝光光斑；同时，从端面泵浦可以获得较好的透射深度，使LD的蓝光充分转化为黄光，均匀分布再荧光陶瓷上表面，并与蓝光LED混合形成色温均匀分布的光源。
2.目前激光照明白光光源多为单一色温光源。本发明通过增加LED蓝光芯片，通过调节LED的功率，可以获得不同色温的混合照明光源(4500K～7500K)，解决激光白光光源色温单一的问题，同时可以有效降低使用多个激光器作为激发源的成本和光路设计问题。
3.相比LED和LD分离的方案，本专利将LED和LD集成在一起的新的封装方案，极大有利于小型化和降低光源的成本。
附图说明
图1为本发明的一种高亮度、色温可调的固态照明光源主视图；
图2为本发明的一种高亮度、色温可调的固态照明光源俯视图；
图3为本发明的一种高亮度、色温可调的固态照明光源光路图。
具体实施方式
下面结合具体实例对本发明创造作详细的介绍。
实施例1
如图1-2所示，准备激光器10、荧光陶瓷板20、基底30、导光层40、LED芯片50；其中，基底30中心设有U型凹槽，所述激光器10固定在凹槽左侧，放置在荧光陶瓷板20的左端面，所述荧光陶瓷板20右端面、前后表面紧贴基底30，所述LED芯片50贴合在基底30凹槽底部，所述LED芯片50与荧光陶瓷板20的下底面中间设置导光层40。
所述导光层40为透明硅脂。
所述激光器10为蓝光半导体激光器。
所述激光器10输出波长为440nm，蓝光输出功率为2W。
所述荧光陶瓷板20为Ce掺杂的YAG荧光陶瓷；其中，Ce3+掺杂浓度0.1at％，荧光陶瓷板厚度0.8mm，宽度3mm，长度10mm，在800nm直线透过率为80.0％，表面平滑处理。
所述LED芯片50的发射波长为440nm，输出的蓝光功率为2W。
如图3所示，所述激光器10发射蓝光，从荧光陶瓷板20的左端面进入荧光陶瓷板20；荧光陶瓷板20充分吸收高功率蓝光并发出黄光，在其上表面均匀分布；LED芯片50发出的蓝光，穿过导光层40后，部分被荧光陶瓷板20吸收转换为黄光，其余部分则穿过荧光陶瓷板20与黄光进行混合，形成色度均匀的白光。
当激光器10的输出蓝光功率为2W，LED芯片50输出的蓝光功率为0.5W时，荧光陶瓷板20的运行温度为38℃，上表面处的平均色温为4265K，光通量为675lm；当激光器10的输出蓝光功率为2W，LED芯片50输出的蓝光功率为1W时，荧光陶瓷板20的运行温度为42℃，上表面处的平均色温为5540K，光通量为782lm；当激光器10的输出蓝光功率为2W，LED芯片50输出的蓝光功率为2W时，荧光陶瓷板20的运行温度为48℃，上表面处的平均色温为8000K，光通量高达960lm。该固态照明光源的色温通过调节LED的输出功率，可在4265～8000K范围内调控。
实施例2
如图1-2所示，准备激光器10、荧光陶瓷板20、基底30、导光层40、LED芯片50；其中，基底30中心设有U型凹槽，所述激光器10固定在凹槽左侧，放置在荧光陶瓷板20的左端面，所述荧光陶瓷板20右端面、前后表面紧贴基底30，所述LED芯片50贴合在基底30凹槽底部，所述LED芯片50与荧光陶瓷板20的下底面中间设置导光层40。
所述导光层40为二相色镜。
所述激光器10为蓝光半导体激光器。
所述激光器10输出波长为460nm，蓝光输出功率为20W。
所述荧光陶瓷板20为Ce掺杂的YAG荧光陶瓷；其中，Ce3+掺杂浓度0.01at％，荧光陶瓷板20厚度1.2mm，宽度20mm，长度20mm，在800nm直线透过率为84.4％，表面平滑处理；
所述LED芯片50的发射波长为460nm，输出的蓝光功率为10W。
所述导光层40在440～480nm高透，在500～800nm高反。
如图3所示，激光器10发射蓝光，从荧光陶瓷板20的左端面进入荧光陶瓷板20；荧光陶瓷板20充分吸收高功率蓝光并发出黄光，在其上表面均匀分布；LED芯片50发出的蓝光，穿过导光层40后，部分被荧光陶瓷板20吸收转换为黄光其余部分则穿过荧光陶瓷板20与黄光进行混合，形成色度均匀的白光。
当激光器10的输出蓝光功率为2W，LED芯片50输出的蓝光功率为0.5W时，荧光 陶瓷板20的运行温度为32℃，上表面处的平均色温为4320K，光通量为745lm,采用二相色镜相比透明硅胶，光线利用率更高；当激光器10的输出蓝光功率为20W，LED芯片50输出的蓝光功率为1W时，荧光陶瓷板20运行温度为82℃，上表面处的平均色温3750K，光通量为5250lm；当激光器10的输出蓝光功率为20W，LED芯片50输出的蓝光功率为5W时，荧光陶瓷板20运行温度90℃，上表面处的平均色温为4890K，光通量为5744lm；当激光器10的输出蓝光功率为20W，LED芯片50输出的蓝光功率为10W时，荧光陶瓷板20运行温度142℃，荧光陶瓷板20出现了一定程度的热猝灭，上表面处的平均色温为6250K，光通量高达6000lm。该固态照明光源的色温通过调节LED的输出功率，可在3750～6250K范围内调控。
值得说明的是，虽然前述内容已经参考若干具体实施方式描述了本发明创造的精神和原理，但是应该理解，本发明并不限于所公开的具体实施方式，对各方面的划分也不意味着这些方面中的特征不能组合，这种划分仅是为了表述的方便。本发明旨在涵盖所附权利要求的精神和范围内所包括的各种修改和等同布置。

Claims (8)

  1. 一种高亮度、色温可调的固态照明光源，其特征在于，包括激光器(10)、荧光陶瓷板(20)、基底(30)、导光层(40)、LED芯片(50)；其中，基底(30)中心设有U型凹槽，所述激光器(10)固定在凹槽左侧，放置在荧光陶瓷板(20)的左端面，所述荧光陶瓷板(20)右端面、前后表面紧贴基底(30)，所述LED芯片(50)贴合在基底(30)凹槽底部，所述LED芯片(50)与荧光陶瓷板(20)的下底面中间设置导光层(40)。
  2. 如权利要求1所述的一种高亮度、色温可调的固态照明光源，其特征在于，所述激光器(10)为蓝光半导体激光器，输出波长为440～460nm，蓝光输出功率为2～20W。
  3. 如权利要求1所述的一种高亮度、色温可调的固态照明光源，其特征在于，所述荧光陶瓷板(20)为Ce掺杂的YAG(Y 3Al 5O 12)荧光陶瓷，Ce掺杂浓度为0.01～0.1at.％，厚度为0.8～1.2mm。
  4. 如权利要求1所述的一种高亮度、色温可调的固态照明光源，其特征在于，所述荧光陶瓷板(20)在800nm直线透过率为80.0～84.4％。
  5. 如权利要求1所述的一种高亮度、色温可调的固态照明光源，其特征在于，所述荧光陶瓷板(20)上表面处的平均色温为3750～8000K，最高光通量为960～6000lm。
  6. 如权利要求1所述的一种高亮度、色温可调的固态照明光源，其特征在于，所述导光层(40)为透明硅脂或二向色镜中的一种。
  7. 如权利要求1所述的一种高亮度、色温可调的固态照明光源，其特征在于，所述LED芯片(50)的发射波长为440～460nm，输出的蓝光功率为2～10W。
  8. 如权利要求1所述的一种高亮度、色温可调的固态照明光源，其特征在于，所述激光器(10)发射蓝光，从荧光陶瓷板(20)的左端面进入荧光陶瓷板(20)；荧光陶瓷板(20)充分吸收高功率蓝光并发出黄光，在其上表面均匀分布；LED芯片(50)发出的蓝光，穿过导光层(40)后，部分被荧光陶瓷板(20)吸收转换为黄光，其余部分则穿过荧光陶瓷板(20)与黄光进行混合，形成色度均匀的白光，改变LED芯片(50)的功率，可以有更多的蓝光透过，进而改变色温。
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104460205A (zh) * 2014-11-28 2015-03-25 杨毅 发光装置和投影装置
CN104487763A (zh) * 2012-07-31 2015-04-01 三菱电机株式会社 液晶显示装置
US20150377430A1 (en) * 2014-06-26 2015-12-31 Texas Instruments Incorporated Hybrid Illumination for Headlamp
CN206118133U (zh) * 2016-10-09 2017-04-19 超视界激光科技（苏州）有限公司 激光光源模组
CN209279066U (zh) * 2019-03-01 2019-08-20 苏州晶清光电科技有限公司 一种高亮度的光源模组
CN110454693A (zh) * 2019-08-14 2019-11-15 浙江比肯科技有限公司 一种采用激光增强的led发光单元
CN111381424A (zh) * 2018-12-28 2020-07-07 青岛海信激光显示股份有限公司 激光光源及激光投影机

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104487763A (zh) * 2012-07-31 2015-04-01 三菱电机株式会社 液晶显示装置
US20150377430A1 (en) * 2014-06-26 2015-12-31 Texas Instruments Incorporated Hybrid Illumination for Headlamp
CN104460205A (zh) * 2014-11-28 2015-03-25 杨毅 发光装置和投影装置
CN206118133U (zh) * 2016-10-09 2017-04-19 超视界激光科技（苏州）有限公司 激光光源模组
CN111381424A (zh) * 2018-12-28 2020-07-07 青岛海信激光显示股份有限公司 激光光源及激光投影机
CN209279066U (zh) * 2019-03-01 2019-08-20 苏州晶清光电科技有限公司 一种高亮度的光源模组
CN110454693A (zh) * 2019-08-14 2019-11-15 浙江比肯科技有限公司 一种采用激光增强的led发光单元

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