WO2022092376A1

WO2022092376A1 - Ion balance measuring sensor and measuring method thereof, and device for adjusting ion balance using ion balance measuring sensor and adjustment method thereof

Info

Publication number: WO2022092376A1
Application number: PCT/KR2020/015170
Authority: WO
Inventors: 이국녕; 성우경; 김원효
Original assignee: 한국전자기술연구원
Priority date: 2020-11-02
Filing date: 2020-11-02
Publication date: 2022-05-05

Abstract

Disclosed is an ion balance measuring sensor and a measuring method thereof, and a device for adjusting ion balance using an ion balance measuring sensor and an adjustment method thereof. The ion balance measuring sensor according to the present invention is characterized by comprising: a positive (p)-type field effect transistor (FET) device connected to a sensing electrode; and a negative (n)-type FET device connected to the sensing electrode, wherein the ion balance is measured using the p-type FET device and the n-type FET device.

Description

Ion balance measuring sensor and its measuring method, Ion balance adjusting device using the ion balance measuring sensor and its controlling method

The present invention relates to an ion balance measuring sensor and a measuring method thereof, an ion balance adjusting device using the ion balance measuring sensor and a controlling method thereof, and more particularly, using a p-type FET (Field Effect Transistor) device and an n-type FET device to simply measure the ion balance, control the ions according to the measured ion balance, and freely change the size of the ion detection electrode. It relates to a balance adjusting device and a method for adjusting the same.

BACKGROUND ART In a semiconductor manufacturing line or a cell production process such as a mobile phone, an antistatic device is disposed near a workbench or a conveyor to prevent electrostatic disturbance or electrostatic adsorption caused by component charging.

The static electricity eliminator used in these manufacturing sites is electrically neutralized by emitting (irradiating) positive or negative ions to the object (parts) in a state of non-uniform charge due to a total or partial excess of positive or negative charges. make it

On the other hand, a general static eliminator uses an ion balance sensor to measure the bias of positive or negative ions.

However, the general ion balance sensor operates on the principle of measuring the potential difference with the ground electrode using a flat electrode, and because of its large size in the form of a measuring instrument, there is a limit to three-dimensionally checking static electricity generated at some local locations in the manufacturing line. There is a problem that there is.

The present invention was devised to solve the above problems, and it is possible to simply measure the ion balance using a p-type FET (Field Effect Transistor) device and an n-type FET device, and adjust the ions according to the measured ion balance, , An object of the present invention is to provide an ion balance measuring sensor and a measuring method thereof, an ion balance adjusting device using the ion balance measuring sensor, and a controlling method thereof, which can freely change the size of an ion detecting electrode.

Ion balance measuring sensor according to an aspect of the present invention for achieving the above object, a p (positive) type FET (Field Effect Transistor) device connected to the sensing electrode; and an n (negative)-type FET device connected to the sensing electrode, wherein ion balance is measured using the p-type FET device and the n-type FET device.

Here, the above-described ion balance measuring sensor simultaneously measures changes in drain-source currents of the p-type FET device and the n-type FET device.

In addition, the above-described ion balance measurement sensor applies a constant voltage to the drains of the p-type FET device and the n-type FET device, connects each bottom gate to the sensing electrode, and each drain- The amount of charge accumulated in the gate electrode and the polarity of the charge are measured according to the change in the magnitude of the source current.

An ion balance control device for achieving the above object includes a p-type FET device connected to a sensing electrode, and an n-type FET device connected to the sensing electrode, and includes the p-type FET device and the n-type FET device. an ion balance measuring sensor for measuring ion balance using; and an ion regulator for controlling at least one of positive and negative ions according to the ion balance measured by the ion balance measuring sensor.

The ion balance measuring sensor simultaneously measures changes in drain-source currents of the p-type FET device and the n-type FET device.

In addition, the ion balance measurement sensor applies a constant voltage to the drains of the p-type FET device and the n-type FET device, connects each bottom gate to the sensing electrode, and each drain-source current The amount of charge accumulated in the gate electrode according to the change and the polarity of the charge are measured.

An ion balance measurement method for achieving the above object includes the steps of connecting a p-type FET device and an n-type FET device to a sensing electrode; and measuring ion balance using the p-type FET device and the n-type FET device.

In the measuring the ion balance, the drain-source current of the p-type FET device and the n-type FET device are simultaneously measured.

In addition, the step of measuring the ion balance includes applying a constant voltage to the drains of the p-type FET device and the n-type FET device, connecting each bottom gate to the sensing electrode, and each of the drain-source currents Measure the amount of charge accumulated in the gate electrode and the polarity of the charge according to the change in the size of the

An ion balance control method for achieving the above object includes the steps of connecting a p-type FET device and an n-type FET device to a sensing electrode; measuring ion balance using the p-type FET device and the n-type FET device; and adjusting at least one of a cation and an anion according to the measured ion balance.

In the ion balance measurement step, changes in drain-source currents of the p-type FET device and the n-type FET device are simultaneously measured.

In addition, in the ion balance measurement step, a constant voltage is applied to the drains of the p-type FET device and the n-type FET device, and each bottom gate is connected to the sensing electrode, and the drain-source current is The amount of charge accumulated in the gate electrode according to the change and the polarity of the charge are measured.

According to the present invention, it is possible to effectively and simply measure the ion balance using a p-type FET device and an n-type FET device.

In addition, according to the present invention, it is possible to accurately measure the ion balance by simultaneously or complementarily utilizing the signal outputs of the p-type FET device and the n-type FET device.

In addition, according to the present invention, since the size of the ion detection electrode can be freely changed and the drain-source current can be simply measured, it can be easily applied to quantitatively detecting the balance of ions and bias of ions.

In addition, according to the present invention, since it can be implemented in the form of a small Internet of Things (IoT) sensor, it is possible to spatially and three-dimensionally monitor the ion balance of the manufacturing line.

In addition, according to the present invention, it is possible to locally control ions according to the measured ion balance.

1 is a view showing an example of a cross-sectional view of a nano FET device used in an ion balance measuring sensor according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating characteristics of n-type and p-type nano FET devices and an example of application of an ion balance sensor.

3 is a diagram schematically showing the configuration of an ion balance measuring sensor according to an embodiment of the present invention, and is a diagram showing an example of a configuration using a p-type nano FET device and an n-type nano FET device at the same time.

4 is a diagram showing an example of data obtained by measuring ion balance in real time using an n-type nano FET device and two p-type nano FET devices.

5 is a diagram schematically showing the configuration of an ion balance adjusting device according to an embodiment of the present invention.

6 is a view showing an example in which the ion balance control device of FIG. 5 is applied to a manufacturing line of an electronic product.

7 is a flowchart illustrating a method for measuring ion balance according to an embodiment of the present invention.

8 is a flowchart illustrating a method for adjusting ion balance according to an embodiment of the present invention.

Hereinafter, some embodiments of the present invention will be described with reference to exemplary drawings. In describing the reference numerals for the components of each drawing, the same components are denoted by the same reference numerals as much as possible even if they are displayed on different drawings. In addition, in describing the embodiment of the present invention, if it is determined that a detailed description of a related known configuration or function interferes with the understanding of the embodiment of the present invention, the detailed description thereof will be omitted.

In addition, in describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only for distinguishing the elements from other elements, and the essence, order, or order of the elements are not limited by the terms. When a component is described as being “connected”, “coupled” or “connected” to another component, the component may be directly connected, coupled, or connected to the other component, but the component and the other component It should be understood that another element may be “connected”, “coupled” or “connected” between elements.

1 is a view showing an example of a cross-sectional view of an FET device used in an ion balance measuring sensor according to an embodiment of the present invention. Here, as the FET, a nano FET device may be used.

The ion balance measuring sensor according to an embodiment of the present invention uses a nano FET device fabricated on an SOI (Silicon On Insulator) substrate. In this case, the ion balance measuring sensor may use an n-type nano FET device and a p-type nano FET device. In this case, the bottom gate of the nano FET device is connected to the sensing electrode to measure the balance of ions, a constant voltage Vds is applied to the drain of the nano FET device, and the change in the drain-source current Ids is detected and accumulated in the gate electrode. You can measure the amount of charge and the polarity of the charge. In addition, the gate voltage Vg may determine the threshold voltage Vth of the n-type nano FET device and the p-type nano FET device. At this time, when Vg is turned on at a negative (-) voltage, the nano FET device is a p-type nano FET device, and when turned on at a positive (+) voltage, the nano FET device is an n-type nano FET device . The ion balance sensor according to an embodiment of the present invention uses n-type and p-type nano FET devices at the same time.

When an anion is excessively adsorbed to the potential of the sensing electrode, Vsn, the Ids value of the p-type nano-FET device increases, and the n-type nano-FET device turns off. Conversely, when positive ions are excessively adsorbed to the potential of the sensing electrode, Vsn, Ids of the p-type nanoFET device is turned off, so Ids = 0, but Ids increases in the n-type nanoFET device.

When the potential of the sensing electrode Vsn is 0 because the ion balance is well matched, as shown in FIG. 2 , the p-type nano FET device exhibits an off characteristic, and the n-type nano FET device causes a current of 1A to flow.

That is, as shown in FIG. 3 , the ion balance measuring sensor 100 according to the embodiment of the present invention is a p-type nano FET device ( 20) and the n-type nano FET device 30 are connected, and the change in the drain-source current Ids according to the change in the magnitude of the potential Vsn of the sensing electrode 10 is converted to I-V and measured. In this case, I-V conversion can be simply implemented with an op amp device.

A reset switch 40 may be installed between the sensing electrode 10 and the ground. At this time, in the reset switch 40 , the upper limit of the amount of ions accumulated in the sensing electrode 10 may be set to the Ids value of any one or more of the n-type or p-type nanoFET device, and the When ions greater than a set value are accumulated, the charge accumulated in the sensing electrode may be reset by switching the reset switch to contact the ground.

Referring to FIG. 4 , when the positive ions are numerically dominant in the neutral state and there are more positive ions in the sensing electrode 10 , the drain-source current Ids of the n-type nano FET device becomes larger, and the degree of its increase can be seen as a change in the magnitude value.

In addition, when negative ions are numerically dominant, the drain-source current Ids of the n-type nano FET device decreases and becomes lower than the level in the neutral state, and when more negative ions exist, the drain-source current Ids becomes smaller. and the signal output of the p-type nano FET device appears. At this time, since the threshold voltage of the p-type nano-FET device is -2.5 V in the IV characteristic shown in FIG. 2, it can be seen that the output signal appears only after negative ions appear as Vs higher than the threshold voltage of the p-type nano-FET device. That is, the change in the ion concentration in the negative ion dominant state appears in an increasing direction for the p-type nano-FET device and a decreasing direction for the n-type nano-FET device.

As can be seen from FIG. 4 , when an ion balance measurement sensor is implemented using n-type and p-type devices at the same time, depending on the position of the n-type and p-type threshold voltages, the It is possible to determine the ion balance change trend without a section.

Referring to FIG. 5 , the ion balance adjusting device 200 according to an embodiment of the present invention includes the ion balance measuring sensor 100 and the ion controller 110 shown in FIG. 3 . Here, the ion controller 110 may be implemented as an ion blower, and adjusts at least one of positive and negative ions according to the ion balance measured by the ion balance measurement sensor 100 .

As shown in FIG. 6 , the ion balance adjusting device 200 may be applied to a manufacturing line of an electronic product. At this time, since the ion balance measuring sensor 100 can be implemented in a small size, it is possible to three-dimensionally measure the ion balance at local locations throughout the manufacturing line.

The ion balance measured by the ion balance measuring sensor 100 is fed back to an ion controller 110 such as an ion blower, and the ion controller 110 is a positive and negative ion according to the value fed back from the ion balance measuring sensor 100 . By adjusting at least one, it is possible to precisely control the ion balance of the manufacturing line.

7 is a flowchart illustrating a method for measuring ion balance according to an embodiment of the present invention. The ion balance measurement method according to an embodiment of the present invention may be performed by the ion balance measurement sensor 100 shown in FIG. 3 .

1 to 4 and 7, the ion balance measuring sensor 100 connects the p-type nano FET device 20 and the n-type nano FET device 30 to one sensing electrode 10 (S110). ).

The ion balance measuring sensor 100 measures the ion balance by converting the change in the drain-source current Ids according to the change in the magnitude of the potential Vsn of the sensing electrode 10 to I-V (S120). In this case, it is preferable that the ion balance measuring sensor 100 simultaneously measures the drain-source current Ids of the p-type nano-FET device and the drain-source current Ids of the n-type nano-FET device. In addition, the ion balance measuring sensor 100 applies a constant voltage Vds to the drains of the p-type nano FET device and the n-type nano FET device, and the amount of charge accumulated in the gate electrode according to the change in the size of each drain-source current Ids and Ion balance can be measured by measuring the polarity of the charge.

8 is a flowchart illustrating a method for adjusting ion balance according to an embodiment of the present invention. The ion balance control method according to the embodiment of the present invention may be performed by the ion balance control device 200 shown in FIG. 5 .

5, 6 and 8 , the ion balance control device 200 is configured by connecting a p-type nano FET device 20 and an n-type nano FET device 30 to one sensing electrode 10 . It includes a balance measuring sensor 100 (S210).

The ion balance measuring sensor 100 measures the ion balance by converting the change of the drain-source current Ids according to the change in the magnitude of the potential Vs of the sensing electrode 10 to I-V ( S220 ). In this case, it is preferable that the ion balance measuring sensor 100 simultaneously measures the drain-source current Ids of the p-type nano-FET device and the drain-source current Ids of the n-type nano-FET device. In addition, the ion balance measuring sensor 100 applies a constant voltage Vds to the drains of the p-type nano FET device and the n-type nano FET device, and the amount of charge accumulated in the gate electrode according to the change in the size of each drain-source current Ids and Ion balance can be measured by measuring the polarity of the charge.

The ion regulator 110 of the ion balance control device 200 adjusts at least one of positive and negative ions according to the ion balance measured by the ion balance measurement sensor 100 (S230).

Although the embodiments according to the present invention have been described above, these are merely exemplary, and those of ordinary skill in the art will understand that various modifications and equivalent ranges of embodiments are possible therefrom. Accordingly, the protection scope of the present invention should be defined by the following claims as well as their equivalents.

Claims

a p (positive) type FET (Field Effect Transistor) device connected to the sensing electrode; and

an n (negative)-type FET device connected to the sensing electrode;

includes,

Ion balance measuring sensor, characterized in that for measuring ion balance (balance) using the p-type FET device and the n-type FET device.
According to claim 1,

Ion balance measuring sensor, characterized in that the change of the drain (drain)-source (source) current of the p-type FET device and the n-type FET device is simultaneously measured.
3. The method of claim 2,

A constant voltage is applied to the drains of the p-type FET device and the n-type FET device, and a bottom gate is connected to the sensing electrode, and a gate electrode according to a change in the magnitude of each drain-source current Ion balance measuring sensor, characterized in that it measures the amount of charge accumulated in the and the polarity of the charge.
an ion balance measuring sensor comprising a p-type FET device connected to a sensing electrode, and an n-type FET device connected to the sensing electrode, and measuring ion balance using the p-type FET device and the n-type FET device; and

an ion regulator for controlling at least one of positive and negative ions according to the ion balance measured by the ion balance measuring sensor;

Ion balance control device comprising a.
5. The method of claim 4,

The ion balance measuring sensor,

Ion balance control device, characterized in that the change of the drain-source current of the p-type FET device and the n-type FET device is simultaneously measured.
6. The method of claim 5,

The ion balance measuring sensor,

A constant voltage is applied to the drains of the p-type FET device and the n-type FET device, each bottom gate is connected to the sensing electrode, and the amount of charge accumulated in the gate electrode according to the change in the magnitude of each drain-source current Ion balance control device, characterized in that for measuring the polarity of the overcharge.
connecting the p-type FET device and the n-type FET device to the sensing electrode; and

measuring ion balance using the p-type FET device and the n-type FET device;

Ion balance measurement method comprising a.
8. The method of claim 7,

Measuring the ion balance comprises:

Ion balance measurement method, characterized in that the change of the drain-source current of the p-type FET device and the n-type FET device is simultaneously measured.
9. The method of claim 8,

Measuring the ion balance comprises:

A constant voltage is applied to the drains of the p-type FET device and the n-type FET device, each bottom gate is connected to the sensing electrode, and the amount of charge accumulated in the gate electrode according to the change in the magnitude of each drain-source current Ion balance measurement method, characterized in that measuring the polarity of the overcharge.
connecting the p-type FET device and the n-type FET device to the sensing electrode;

measuring ion balance using the p-type FET device and the n-type FET device; and

adjusting at least one of a cation and an anion according to the measured ion balance;

Ion balance control method comprising a.
11. The method of claim 10,

The ion balance measurement step,

Ion balance control method, characterized in that the change of the drain-source current of the p-type FET device and the n-type FET device is simultaneously measured.
12. The method of claim 11,

The ion balance measurement step,

A constant voltage is applied to the drains of the p-type FET device and the n-type FET device, each bottom gate is connected to the sensing electrode, and the amount of charge accumulated in the gate electrode according to the change in the magnitude of each drain-source current Ion balance control method, characterized in that measuring the polarity of the overcharge.