CN107134462B - Array substrate and touch-control display panel - Google Patents
Array substrate and touch-control display panel Download PDFInfo
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- CN107134462B CN107134462B CN201710522189.4A CN201710522189A CN107134462B CN 107134462 B CN107134462 B CN 107134462B CN 201710522189 A CN201710522189 A CN 201710522189A CN 107134462 B CN107134462 B CN 107134462B
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- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 claims abstract description 274
- 230000005611 electricity Effects 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 14
- 238000001514 detection method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0414—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
This application discloses a kind of array substrate and touch-control display panels, the array substrate includes viewing area and the non-display area around viewing area, multiple semiconductor pressure sensors, are located at non-display area, and each semiconductor pressure sensor includes multiple for incuding the semiconductor resistor of ambient pressure；Voltage applying circuit, for applying voltage to semiconductor pressure sensor；Voltage detecting circuit, for obtaining the compliance voltage of semiconductor pressure sensor；Multiple resistance correcting circuits, it is corresponding with resistance correcting circuit that there are at least one semiconductor resistors in each semiconductor pressure sensor, resistance correcting circuit is used to correct the resistivity of corresponding semiconductor resistor, so that the semiconductor resistor in each semiconductor pressure sensor in above-mentioned array substrate balances in the state of being not sensed by ambient pressure, and corresponding compliance voltage is preset initial value, touch-control display panel can accurately detect the size of touch-control pressure according to compliance voltage.
Description
Technical field
Present application relates generally to field of display technology more particularly to array substrate and the touch-control including the array substrate is aobvious
Show panel.
Background technique
Currently, more and more electronic equipments are configured with touch-control display panel, for example, the information in public place hall is inquired
Machine, mobile phone, the computer etc. of user in daily life.When user using for example finger is to touch touch-control display panel when, touching
Control display panel sends signals to the equipment.There are many touch-control display panels not to only need to detect that touching in various equipment
Control position, it is also necessary to detect touch-control pressure, pressure sensor can be used usually to detect touch-control pressure in touch-control display panel
Size.
The pressure sensor that touch-control display panel in the prior art uses is usually bridge type pressure sensor.Bridge type
For pressure sensor when being not sensed by ambient pressure, each resistance in electric bridge may be at equilibrium state, and bridge type pressure passes
For sensor when sensing ambient pressure, bridge type pressure sensor can be vertical for causing by the electrical parameter determination detected
Directly in touch-control display panel surface direction deformation pressure size.But when due to preparation array substrate, there are technological fluctuations
Etc. factors cause touch-control display panel not so that bridge type pressure sensor electric bridge when being not sensed by ambient pressure is uneven
It can accurately detect the size of touch-control pressure thereon.
Summary of the invention
In view of drawbacks described above in the prior art, the embodiment of the present application provides a kind of array substrate and including the array base
The touch-control display panel of plate, to solve the technical issues of background section above is mentioned.
To achieve the goals above, in a first aspect, the embodiment of the present application provides a kind of array substrate, the array substrate packet
Viewing area and the non-display area around viewing area are included, which includes: multiple semiconductor pressure sensors, is located at non-display
Area, each semiconductor pressure sensor include multiple for incuding the semiconductor resistor of ambient pressure；Voltage applying circuit, voltage are applied
Power-up road is electrically connected with the first connecting pin of semiconductor pressure sensor and second connection end respectively, for passing to semiconductor pressure
Sensor applies voltage；Voltage detecting circuit, voltage detecting circuit respectively with the third connecting pin of semiconductor pressure sensor and
Four connecting pins electrical connection, for obtaining the compliance voltage of semiconductor pressure sensor；Multiple resistance correcting circuits, each semiconductor
It is corresponding with resistance correcting circuit that there are at least one semiconductor resistors in pressure sensor, and resistance correcting circuit is for correcting therewith
The resistivity of corresponding semiconductor resistor, so that the semiconductor resistor in each semiconductor pressure sensor is being not sensed by extraneous pressure
Corresponding compliance voltage is preset initial value in the state of power.
Second aspect, the embodiment of the present application also provides a kind of touch-control display panels, including above-mentioned array substrate.
Array substrate provided by the embodiments of the present application and touch-control display panel, each semiconductor in semiconductor pressure sensor
Resistance can incude ambient pressure, and voltage applying circuit can apply voltage, voltage detecting circuit to semiconductor pressure sensor
The compliance voltage of available semiconductor pressure sensor, and each semiconductor pressure sensor may exist at least one partly
Conductor resistance is corresponding with resistance correcting circuit, and resistance correcting circuit can correct the resistance of corresponding semiconductor resistor
Rate, so that the semiconductor resistor in semiconductor pressure sensor is in the state of being not sensed by ambient pressure, voltage detecting
The compliance voltage that circuit detects is preset initial value, it can so that the electric bridge initial balance of semiconductor pressure sensor, with
The size of touch-control pressure thereon can be accurately detected convenient for touch-control display panel.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, the application's is other
Feature, objects and advantages will become more apparent upon:
Figure 1A shows the structural schematic diagram of an embodiment of the array substrate according to the application；
Figure 1B shows the connection relationship diagram of the semiconductor pressure sensor of the array substrate in Figure 1A；
Fig. 1 C shows another connection relationship diagram of the semiconductor pressure sensor of the array substrate in Figure 1A；
Fig. 2A shows the structural schematic diagram of another embodiment of the array substrate according to the application；
Fig. 2 B shows the structural schematic diagram of an implementation of the array substrate according to the present embodiment；
Fig. 2 C shows the structural schematic diagram of another implementation of the array substrate according to the present embodiment；
Fig. 2 D shows the structural schematic diagram of the another implementation of the array substrate according to the present embodiment；
Fig. 3 shows the schematic diagram of a touch control display apparatus of the touch-control display panel including the application.
Specific embodiment
The principle of the application and feature are described in further detail with reference to the accompanying drawings and examples.It is understood that
It is that specific embodiment described herein is used only for explaining related invention, rather than the restriction to the invention.It further needs exist for
It is bright, part relevant to invention is illustrated only for ease of description, in attached drawing.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
Figure 1A-Figure 1B is please referred to, the structure that wherein Figure 1A shows an embodiment of the array substrate according to the application is shown
It is intended to, Figure 1B shows the connection relationship diagram of the semiconductor pressure sensor of the array substrate in Figure 1A.As shown in Figure 1A,
Array substrate 100 in the present embodiment may include viewing area 110 and non-display area 120, and non-display area 120 can be surround
Viewing area 110.
In the present embodiment, above-mentioned array base 100 can also include multiple semiconductor pressure sensors 101, such as Figure 1A institute
Show, and each semiconductor pressure sensor 101 can be set in non-display area 120, so as to avoid each semiconductor pressure sensing
The luminescence display of the influence 100 place touch-control display panel of array substrate of device 101.As shown in Figure 1B, above-mentioned array substrate 100 may be used also
To include the voltage applying circuit 102 and voltage detecting circuit 103 being electrically connected with each semiconductor pressure sensor.Further,
Above-mentioned each semiconductor pressure sensor 101 may include multiple semiconductor resistors, and each semiconductor resistor can be pressure sensitive electricity
Resistance can incude extraneous pressure.When the touch-control display panel where array substrate 100 is when receiving ambient pressure, partly lead
The resistance value of semiconductor resistor in pressure sensor 101 can correspondingly change.
It should be noted that above-mentioned each semiconductor pressure sensor 101 may include the first connecting pin S1, second connection end
S2, third connecting pin S3 and the 4th connecting pin S4, as shown in Figure 1B.Each semiconductor pressure sensor 101 can be applied with voltage
It is powered on road 102 and voltage detecting circuit 103 is electrically connected, specifically, voltage applying circuit 102 can be passed with semiconductor pressure respectively
The the first connecting pin S1 and second connection end S2 of sensor 101 are electrically connected, voltage detecting circuit 103 can respectively with semiconductor pressure
The third connecting pin S3 and the 4th connecting pin S4 of sensor 101 are electrically connected, as shown in Figure 1B.Above-mentioned voltage applying circuit 103 can
To apply voltage to the semiconductor pressure sensor 101 being electrically connected, above-mentioned voltage detecting circuit 103 is available electric therewith
The compliance voltage of the semiconductor transducer 101 of connection.Here, the compliance voltage that voltage detecting circuit 103 detects is semiconductor
Voltage in sensor 101 between third connecting pin S3 and the 4th connecting pin S4.Touch-control display surface where array substrate 100
When plate is by ambient pressure, deformation occurs for touch-control display panel, the impedance of the semiconductor resistor in semiconductor pressure sensor 101
Corresponding variation occurs, causes answering between third connecting pin S3 and the 4th connecting pin S4 in semiconductor pressure sensor 101
Time variant voltage changes, therefore the voltage value of the compliance voltage obtained according to voltage detecting circuit 103 may determine that touch-control is aobvious
Show the size for the touch-control pressure that panel receives.
In the present embodiment, above-mentioned array substrate 100 can also include multiple resistance correcting circuits 104, as shown in Figure 1B,
Resistance correcting circuit 104 can be used for the resistivity of calibrating semiconductor resistance.It should be noted that each resistance correcting circuit
104 can be corresponding with a semiconductor resistor, and at least there is a semiconductor in each semiconductor pressure sensor 101
Resistance is corresponding with resistance correcting circuit 104, for example, as shown in Figure 1B, there are one and half to lead for the semiconductor pressure sensor 101
Bulk resistor is corresponding with resistance correcting circuit 104, and resistance correcting circuit 104 can correct the electricity of corresponding semiconductor resistor
Resistance rate, therefore resistance correcting circuit 104 can change the resistance value of semiconductor resistor by changing the resistivity of semiconductor resistor.
It should be noted that above-mentioned resistance correcting circuit 104 can input first voltage signal, the electric field which forms
It can make the carrier directional drift in semiconductor resistor, and the power of electric field can influence carrier in semiconductor resistor
Mobility, the mobility of carrier influences the resistivity of semiconductor resistor, and carrier mobility is bigger, the electricity of semiconductor resistor
Resistance rate is smaller.Therefore, inputting different first voltage signals to resistance correcting circuit 104 can change the resistance of semiconductor resistor
Rate, so as to change the resistance value of the semiconductor resistor.In the prior art, due to depositing during preparing array substrate 100
In factors such as technological fluctuations, cause the resistance value of the semiconductor resistor in the semiconductor pressure sensor 101 prepared in certain journey
Degree on may deviation theory resistance value so that semiconductor resistor voltage detecting in the state of being not sensed by ambient pressure
The compliance voltage that circuit 103 obtains deviates preset initial value to a certain extent.In this case, above-mentioned resistance correcting circuit
104 can by the resistivity of calibrating semiconductor resistance come so that the semiconductor resistor in semiconductor pressure sensor 101 resistance
Value is theoretical resistance, so that voltage detecting circuit 103 detects in the state that semiconductor resistor is not sensed by ambient pressure
Compliance voltage out is preset initial value.It should be noted that the preset initial value of compliance voltage is compared with zero and can have one
Fixed error range can then recognize when the voltage value for the compliance voltage that voltage detecting circuit 103 detects is in the error range
Resistance value for the semiconductor resistor in the semiconductor pressure sensor 101 is theoretical resistance.In some optional of the present embodiment
In ground implementation, when each semiconductor resistor in each semiconductor pressure sensor 101 is not sensed by ambient pressure, above-mentioned electricity
The compliance voltage for pressing detection circuit 103 to obtain can be zero, i.e., the preset initial value of above-mentioned compliance voltage can be zero.
It is appreciated that the semiconductor pressure sensor 101 in above-mentioned array substrate 100 is being not sensed by ambient pressure
When, if the compliance voltage that voltage detecting circuit 103 detects deviates preset initial value, cause semiconductor pressure sensor 101
When sensing ambient pressure, the compliance voltage inaccuracy that voltage detecting circuit 103 detects, so that touch-control display panel
The value inaccuracy of calculated ambient pressure.Resistance correcting circuit 104 in the present embodiment can be by changing semiconductor resistor
Resistivity change the resistance value of the semiconductor resistor so that semiconductor pressure sensor 101 is when being not sensed by ambient pressure
The compliance voltage that voltage detecting circuit 103 detects is preset initial value, is being felt to improve semiconductor pressure sensor 101
The precision for the compliance voltage that voltage detecting circuit 103 detects when should arrive ambient pressure improves touch-control display panel and calculates
Ambient pressure precision.
Touch-control display panel where above-mentioned array substrate 100 is not when receiving ambient pressure, semiconductor pressure sensing
Each semiconductor resistor in device 101 is in equilibrium state, and it is default first that above-mentioned voltage detecting circuit 103 detected, which answers pressure changeable,
Initial value.When touch-control display panel receives first pressure, then each semiconductor resistor in semiconductor pressure sensor 101 is in
Non-equilibrium state, the compliance voltage that voltage detecting circuit 103 detects the semiconductor pressure sensor 101 of non-equilibrium state is V1,
And convert to the corresponding compliance voltage of semiconductor pressure sensor 101 under non-equilibrium state, to realize aobvious to touch-control
Show the pressure detecting of panel.But due to causing to make there are factors such as technological fluctuations during preparing array substrate 100
Each semiconductor resistor in standby semiconductor pressure sensor 101 out is uneven when being not sensed by ambient pressure, and works as
When touch-control display panel receives first pressure, each semiconductor resistor in semiconductor pressure sensor 101 is still in imbalance
State, the compliance voltage that voltage detecting circuit 103 detects at this time is V2, and compliance voltage V2 is less than compliance voltage V1, in turn
Influence the precision of the pressure detecting of touch-control display panel.Resistance correcting circuit 104 in the present embodiment can make semiconductor pressure
Each semiconductor resistor in force snesor 101 may be at equilibrium state when being not sensed by ambient pressure, improve semiconductor
The range of the producible compliance voltage value of the sensor before and after pressing of pressure sensor 101, improves the inspection of touch-control display panel
Survey precision.In some optionally implementations of the present embodiment, above-mentioned fifty-fifty conductor voltage sensor 101 can be Hui Sitong
The electric bridge of electric bridge, each semi-conductor electricity pressure sensor 101 can be by the first semiconductor resistor R1, the second semiconductor resistor R2,
Three semiconductor resistor R3 and the 4th semiconductor resistor R4 composition, as shown in Figure 1B.Specifically, above-mentioned first semiconductor resistor R1
Second end can be electrically connected with the first end of the second semiconductor resistor R2, and the second end of the second semiconductor resistor R2 can be with the 4th
The first end of semiconductor resistor R4 is electrically connected, and the second end of the 4th semiconductor resistor R4 can be with the of third semiconductor resistor R3
One end electrical connection, the second end of third semiconductor resistor R3 can be electrically connected with the first end of the first semiconductor resistor R1, such as be schemed
Shown in 1B.The first end of above-mentioned first semiconductor resistor R1 can be the first company of the semiconductor pressure sensor 101 where it
The second end for meeting end S1, the second semiconductor resistor R2 can be the second connection end of the semiconductor pressure sensor 101 where it
The second end of S2, the first semiconductor resistor R1 can be the third connecting pin S3 of the semiconductor pressure sensor 101 where it, the
The second end of four semiconductor resistor R4 can be the 4th connecting pin S4, such as Figure 1B of the semiconductor pressure sensor 101 where it
It is shown.Above-mentioned voltage applying circuit 102 can be electrically connected with the first connecting pin S1 and second connection end S2 respectively, above-mentioned voltage inspection
Slowdown monitoring circuit 103 can be electrically connected with third connecting pin S3 and the 4th connecting pin S4 respectively.When the touch-control where array substrate 100 is aobvious
The first semiconductor resistor R1, the second semi-conductor electricity when showing that panel does not receive ambient pressure, in semiconductor pressure sensor 101
The electric bridge of resistance R2, third semiconductor resistor R3 and the 4th semiconductor resistor R4 composition may be at equilibrium state, i.e., each semiconductor
Resistance needs to meetAnd when the first semiconductor resistor R1, the second semiconductor resistor R2, third semiconductor resistor R3 and
When the electric bridge imbalance of the 4th semiconductor resistor R4 composition, above-mentioned resistance correcting circuit 104 can partly be led by the way that correction is corresponding
The resistivity of bulk resistor changes the resistance value of the semiconductor resistor, so that each semiconductor resistor needs to meet
For example, as shown in Figure 1B, if each semiconductor resistor in semiconductor pressure sensor 101 when being not sensed by ambient pressure, respectively
Semiconductor resistor is unsatisfactory forThen resistance correcting circuit 104 corresponding with the second semiconductor resistor R2 can be by changing
Become the resistivity of second semiconductor resistor R2 to change the resistance value of second semiconductor resistor R2, so that each semi-conductor electricity
Resistance can satisfyIt can be so that the semiconductor pressure sensor 101 be in equilibrium state.
Above-mentioned array substrate 100 using voltage applying circuit 102 to semiconductor pressure sensor 101 apply voltage when,
It can be using the first connecting pin S1 or second connection end S2 as voltage input end.For example, as shown in Figure 1 C, semiconductor pressure sensing
Device 101 can be using the first connecting pin S1 as voltage input end, and driving chip etc. can input Vref to voltage applying circuit 102
Voltage, so that voltage applying circuit can input Vref voltage with the first connecting pin S1 of semiconductor pressure sensor 101, partly
Second connection end S2 can be grounded by conductor pressure sensor 101, connect GND.Fig. 1 C shows the array substrate in Figure 1A
Another connection relationship diagram of semiconductor pressure sensor.Similarly, above-mentioned semiconductor pressure sensor 101 can also be by
Two connecting pin S2 can input Vref voltage as voltage input end, voltage applying circuit 102 to second connection end S2, and first connects
Meeting end S1 can be grounded, and connect GND.Voltage detecting circuit 103 can connect in third connecting pin S3 and the 4th connecting pin S4, such as
Shown in Fig. 1 C, when detecting the compliance voltage of semiconductor pressure sensor 101 using voltage detecting circuit 103, available the
Voltage between three connecting pin S3 and the 4th connecting pin S4.Above-mentioned voltage detecting circuit 103, can be with after detecting compliance voltage
Send the compliance voltage to the processor (such as driving chip) connecting with voltage detecting circuit 103, which can basis
Voltage between third connecting pin S3 and the 4th connecting pin S4 calculates answering between third connecting pin S3 and the 4th connecting pin S4
Time variant voltage, and the size of touch-control pressure is further calculated according to the compliance voltage.
The array substrate provided by the above embodiment of the application, each semiconductor resistor in semiconductor pressure sensor 101
Ambient pressure can be incuded, voltage applying circuit 102 can apply voltage, voltage detecting electricity to semiconductor pressure sensor 101
The compliance voltage of the available semiconductor pressure sensor 101 in road 103, there may be extremely for each semiconductor pressure sensor 101
A few semiconductor resistor is corresponding with resistance correcting circuit 104, and resistance correcting circuit 104, which can correct, corresponding partly leads
The resistivity of bulk resistor, so that the semiconductor resistor in semiconductor pressure sensor 101 is being not sensed by ambient pressure
Under state, the compliance voltage that voltage detecting circuit 103 detects is preset initial value, it can so that semiconductor pressure sensor
101 electric bridge initial balance, in order to which touch-control display panel can accurately detect the size of touch-control pressure thereon.
Please continue to refer to Fig. 2A, it illustrates the structural schematic diagrams according to another embodiment of the array substrate of the application.
As shown in Figure 2 A, the array substrate 200 in the present embodiment may include multiple semiconductor pressure sensors, voltage applying circuit
202, voltage detecting circuit 203 and resistance correcting circuit 204, and semiconductor pressure sensor may include multiple semi-conductor electricities
Resistance 201, each semiconductor resistor 201 can be used for incuding ambient pressure.
In the present embodiment, above-mentioned voltage applying circuit 202 can be connect with the first of semiconductor pressure sensor respectively
End and second connection end electrical connection, above-mentioned voltage detecting circuit 203 can be connect with the third of semiconductor pressure sensor respectively
End and the electrical connection of the 4th connecting pin, wherein voltage applying circuit 202 can apply voltage, voltage inspection to semiconductor pressure sensor
The compliance voltage of the available semiconductor pressure sensor of slowdown monitoring circuit 203.Above-mentioned array substrate 200 may include multiple semiconductors
Pressure sensor, and there are at least one semiconductor resistors 201 in each pressure sensor can be with resistance correcting circuit 204
Corresponding, which can correct the resistivity of corresponding semiconductor resistor 201.It should be noted that electric
The compliance voltage for pressing detection circuit 203 to obtain is related to the resistance value of semiconductor resistor 201 in semi-conductor electricity pressure sensor, when half
When conductor pressure sensor is not sensed by ambient pressure, the compliance voltage that voltage detecting circuit 203 detects can be default first
Initial value, and when semiconductor pressure sensor senses ambient pressure, the compliance voltage that voltage detecting circuit 203 detects also can
Change accordingly, and semiconductor pressure sensor sense ambient pressure it is of different sizes when, voltage detecting circuit 203
The compliance voltage detected also can be different.But due to array substrate 200 prepare during there are technological fluctuation etc. because
Element, the resistance value of the semiconductor resistor 201 in semiconductor pressure sensor may deviation theory value so that voltage detecting circuit
203 compliance voltages detected deviate preset initial value, the pressure inaccuracy for causing touch-control display panel to detect.Such situation
Under, resistance correcting circuit 204 can be changed and partly be led with the resistivity of the semiconductor resistor 201 in calibrating semiconductor pressure sensor
The resistance value of bulk resistor 201, to guarantee the detection when semiconductor resistor 201 is not sensed by ambient pressure of voltage detecting circuit 203
The compliance voltage arrived can be preset initial value.
It should be noted that the array substrate 200 in the present embodiment can also include multiple thin film transistor (TFT)s, such as Fig. 2A institute
Show, each thin film transistor (TFT) may include grid 205, source electrode 206, drain electrode 207 and active layer 208.Array substrate is by multiple levels
Structure composition, as shown in Figure 2 A, the grid 205 of thin film transistor (TFT) are located at grid layer, and source electrode 206 and drain electrode 207 are located at source-drain electrode
Layer, active layer 208 are located at semiconductor layer.Each semiconductor resistor 201 in above-mentioned semiconductor pressure sensor can be with film crystalline substance
208 same layer of active layer of body pipe is arranged, as shown in Figure 2 A.
Above-mentioned resistance correcting circuit 204 can be arranged with 205 same layer of grid of thin film transistor (TFT), and each resistance correction electricity
Road 204 can be corresponded with semiconductor resistor 201, for example, each semiconductor resistor 201 in each semiconductor pressure sensor
It can there are a semiconductor resistors in semiconductor pressure sensor corresponding or each with a resistance correcting circuit 204
201 is corresponding with a resistance correcting circuit 204.Also, any resistance correcting circuit 204 and corresponding semiconductor resistor
201 can be least partially overlapped on the direction perpendicular to the substrate 210 of array substrate 200, as shown in Figure 2 A.Array substrate
Driving chip in 200 etc. can provide first voltage signal for each resistance correcting circuit 204, so that with each resistance correcting circuit
Carrier in 204 corresponding semiconductor resistors 201 can be with directional drift under the action of electric field, and the mobility of carrier
It can determine the resistivity of semiconductor resistor 201, mobility is bigger, and the resistivity of semiconductor resistor is smaller, and resistance correction electricity
The height of the first voltage signal inputted in road 204 can influence the concentration of carrier in semiconductor resistor 201, resistance correction electricity
Road 204 can correct the resistivity of corresponding semiconductor resistor 201, to change the resistance value of the semiconductor resistor 201.Cause
This, if semiconductor pressure sensor causes electric bridge uneven due to the resistance value deviation theory value there are semiconductor resistor 201, with this
The corresponding resistance correcting circuit 204 of semiconductor resistor 201 in semiconductor pressure sensor can be by changing semiconductor resistor
201 resistivity corrects the resistance value of the semiconductor resistor 201, so that semiconductor resistor 201 is being not sensed by extraneous pressure
When power, the electric bridge of the semiconductor pressure sensor can be balanced, so that the strain that above-mentioned voltage detecting circuit 203 detects
Voltage can be preset initial value.Optionally, preset initial value here can be zero.
In the present embodiment, when the first voltage signal that any resistance correcting circuit 204 inputs changes, with the resistance
The resistivity of the corresponding semiconductor resistor of correcting circuit 204 can occur to change accordingly.Therefore, it is not sensed by semiconductor resistor
When ambient pressure, the size of preset initial value is deviateed according to the compliance voltage that voltage detecting circuit 203 detects, can determine half
The size of 201 deviation theory value of conductor resistance, and then the first voltage signal provided to resistance correcting circuit 204 can be provided
Voltage value, so that semiconductor resistor 201 can reach theoretical resistance by changing resistivity.
In the present embodiment, partly leading where the grid layer and active layer 208 where the grid 205 of above-mentioned thin film transistor (TFT)
It can be equipped between gate insulating layer 209, semiconductor layer and source electrode 206 and the source-drain electrode layer at 207 place of drain electrode and set between body layer
There is the first insulating layer 211.Optionally, the structure of the thin film transistor (TFT) in array substrate 200 can be as shown in Figure 2 A, and above-mentioned first
Insulating layer 211 specifically can be between grid layer and source-drain electrode layer.It should be noted that the source electrode 206 of thin film transistor (TFT)
It can be in contact by first through hole with active layer with drain electrode 207, and above-mentioned voltage applying circuit 202 and voltage detecting circuit
203 can be arranged with the source electrode 206 and 207 same layers of drain electrode of thin film transistor (TFT), as shown in Figure 2 A, similarly, voltage applying circuit
202 and voltage detecting circuit 203 can also be electrically connected by first through hole with the semiconductor resistor 201 in semiconductor layer so that
Voltage applying circuit 202 can apply voltage, voltage detecting electricity to the semiconductor pressure sensor where the semiconductor resistor 201
Road 203 can detecte the compliance voltage of the semiconductor pressure sensor where the semiconductor resistor 201.Specifically, above-mentioned voltage
Apply circuit 202 can respectively with the first connecting pin and second in the semiconductor pressure sensor where semiconductor resistor 201
Connecting pin electrical connection, the semiconductor pressure sensor that above-mentioned voltage detecting circuit 203 can respectively with 201 place of semiconductor resistor
In third connecting pin and the 4th connecting pin electrical connection.It is appreciated that when the structure of thin film transistor (TFT) is as shown in Figure 2 A, source and drain
There are gate insulating layer and the first insulating layer between pole layer and semiconductor layer, above-mentioned first through hole can run through the gate insulating layer
With the first insulating layer so that the source electrode 206 of thin film transistor (TFT) and drain electrode 207 can be connected by first through hole with active layer
Touching, voltage applying circuit 202 and voltage detecting circuit 203 can also pass through the semiconductor resistor in first through hole and semiconductor layer
201 electrical connections.
In some optionally implementations of the present embodiment, in addition to needing to be arranged source electrode 206, leakage in above-mentioned source-drain electrode layer
Other than pole 207, voltage applying circuit 202 and voltage detecting circuit 203, usually also need to dispose data line etc., therefore the source and drain
Pole layer may have wiring space deficiency, in such cases, can be by voltage applying circuit 202 or voltage detecting electricity
Part route in road 203 is deployed to third metal layer.The second insulation can be equipped between the third metal layer and source-drain electrode layer
Layer 212, as shown in Figure 2 B, Fig. 2 B shows the structural schematic diagram of an implementation of the array substrate according to the present embodiment.On
Stating voltage detecting circuit 203 may include the second part positioned at the first part 2031 of source-drain electrode layer and positioned at third metal layer
2032, and the first part 2031 of the voltage detecting circuit 203 can pass through first through hole and semiconductor pressure sensor
The second part 2032 of the electrical connection of third connecting pin, voltage detecting circuit 203 can be passed by the second through-hole and semiconductor pressure
4th connecting pin of sensor is electrically connected.Specifically, as shown in Figure 2 B, above-mentioned second through-hole can run through third metal layer and source and drain
All between metal layer have hierarchical structure, so that the second part 2032 of above-mentioned voltage detecting circuit 203 can pass through second
Through-hole and first part 2031 is electrically connected with the 4th connecting pin of semiconductor pressure sensor in source-drain electrode metal layer, thus
It realizes and voltage detecting circuit 203 is arranged in source-drain electrode layer and third metal layer, it is insufficient to solve source-drain electrode layer wiring space
Problem.
Optionally, above-mentioned second through-hole may also extend through all hierarchical structures between third metal layer and semiconductor layer,
As shown in Figure 2 C, the second part 2032 of above-mentioned voltage detecting circuit can directly be passed with semiconductor pressure by the second through-hole
4th connecting pin of sensor is electrically connected.It is appreciated that, above-mentioned voltage applying circuit 202 similar with above-mentioned voltage detecting circuit 203
It also may include that two parts of third metal layer and source-drain electrode layer are set, and are located at third gold in voltage applying circuit 202
The part of the part and source-drain electrode layer that belong to layer can be electrically connected by through-hole.
In some optionally implementations of the present embodiment, above-mentioned array substrate 200 can also include driving chip, on
Stating resistance correcting circuit 204 can be connected with driving chip, which can provide first to resistance correcting circuit 204
Voltage signal, in order to which the first voltage signal can correct semiconductor resistor 201 corresponding with the resistance correcting circuit 204
Resistivity, to change the resistance value of corresponding semiconductor resistor 201, so that the electrostrictive strain that voltage detecting circuit 203 detects
Pressure is preset initial value.
It is appreciated that in the array substrate 200 of the present embodiment, above-mentioned semiconductor layer, grid layer and source-drain electrode layer can be with
It is arranged successively on the direction perpendicular to the substrate 210 of array substrate 200, i.e., grid layer can be located at semiconductor layer and source-drain electrode
Between layer, as shown in figures 2 a-c.Alternatively, grid layer, semiconductor layer and source and drain in array substrate 200 in the present embodiment
Pole layer can be arranged successively on the direction perpendicular to the substrate 210 of array substrate 200, i.e., grid layer can be located at substrate 210
Between semiconductor layer, as shown in Figure 2 D, still, above-mentioned semiconductor resistor 201 still can be with the active layer 208 of thin film transistor (TFT)
Same layer setting, voltage applying circuit 202 and voltage detecting circuit 203 still can with the source electrode 206 of thin film transistor (TFT) and drain 207
Same layer setting, resistance correcting circuit 204 can be still arranged with 205 same layer of grid of thin film transistor (TFT), as shown in Figure 2 D.Fig. 2 D shows
The structural schematic diagram of the another implementation of the array substrate according to the present embodiment is gone out.It is appreciated that grid layer can be located at
When between substrate 210 and semiconductor layer, which also may include third metal layer (not shown), and above-mentioned voltage applies electricity
Part route in road 202 or voltage detecting circuit 203 is deployed to the third metal layer, can solve source-drain electrode layer wiring space
Insufficient problem.
The array substrate provided by the above embodiment 200 of the application, the semiconductor resistor 201 in semiconductor pressure sensor
It can be arranged with 208 same layer of active layer of thin film transistor (TFT), resistance correcting circuit 204 can be with the grid 205 of thin film transistor (TFT)
Same layer setting, the first voltage signal changed in resistance correcting circuit 204 can correspondingly change in semiconductor pressure sensor
Semiconductor resistor 201 resistivity, it is seen that resistance correcting circuit can by change semiconductor resistor 201 resistivity come school
Positive resistance, so as to avoid the 201 deviation theory value of each semiconductor resistor in semiconductor pressure sensor, so that semiconductor pressure
The bridge balance that each semiconductor resistor 201 in force snesor forms.
In addition, may include the array substrate in above-described embodiment present invention also provides a kind of touch-control display panel.And
And in the touch-control display panel array substrate structure and function it is same as the previously described embodiments, which is not described herein again.Here, it touches
Control display panel can be used for preparing the mobile phone with touch function as shown in Figure 3, and Fig. 3 shows the touching including the application
Control the schematic diagram of a touch control display apparatus of display panel.It will be appreciated by persons skilled in the art that above-mentioned touch-control display dress
Setting to be computer, TV, wearable intelligent equipment etc. with touch function, will not enumerate here.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.Those skilled in the art
Member is it should be appreciated that invention scope involved in the application, however it is not limited to technology made of the specific combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where not departing from the inventive concept, it is carried out by above-mentioned technical characteristic or its equivalent feature
Any combination and the other technical solutions formed.Such as features described above has similar function with (but being not limited to) disclosed herein
Can technical characteristic replaced mutually and the technical solution that is formed.
Claims (11)
1. a kind of array substrate, which is characterized in that the array substrate includes viewing area and non-display around the viewing area
Area, the array substrate include:
Multiple semiconductor pressure sensors are located at the non-display area, and each semiconductor pressure sensor includes multiple is used for
Incude the semiconductor resistor of ambient pressure；
Voltage applying circuit, the voltage applying circuit respectively with the first connecting pin of the semiconductor pressure sensor and second
Connecting pin electrical connection, for applying voltage to the semiconductor pressure sensor；
Voltage detecting circuit, the voltage detecting circuit respectively with the third connecting pin of the semiconductor pressure sensor and the 4th
Connecting pin electrical connection, for obtaining the compliance voltage of the semiconductor pressure sensor；
Multiple resistance correcting circuits, there are semiconductor resistors described at least one and institute in each semiconductor pressure sensor
It is corresponding to state resistance correcting circuit, the resistance correcting circuit is used for by inputting first voltage to corresponding semiconductor resistor
Signal corrects the resistivity of the corresponding semiconductor resistor, so that described in each semiconductor pressure sensor
Semiconductor resistor corresponding compliance voltage in the state of being not sensed by ambient pressure is preset initial value.
2. array substrate according to claim 1, which is characterized in that each semiconductor pressure sensor includes first
The electric bridge that semiconductor resistor, the second semiconductor resistor, third semiconductor resistor and the 4th semiconductor resistor form；
Wherein, the second end of first semiconductor resistor is electrically connected with the first end of second semiconductor resistor, and described
The second end of two semiconductor resistors is electrically connected with the first end of the 4th semiconductor resistor；
The second end of 4th semiconductor resistor is electrically connected with the first end of the third semiconductor resistor, and the third is partly led
The second end of bulk resistor is electrically connected with the first end of first semiconductor resistor.
3. array substrate according to claim 2, which is characterized in that the first end of first semiconductor resistor is described
First connecting pin, the second end of second semiconductor resistor are the second connection end, the of first semiconductor resistor
Two ends are the third connecting pin, and the second end of the 4th semiconductor resistor is the 4th connecting pin.
4. array substrate according to claim 1, which is characterized in that it further include multiple thin film transistor (TFT)s, each film
Transistor includes grid, source electrode, drain electrode and active layer, wherein the grid is located at grid layer, the source electrode and the drain electrode position
In source-drain electrode layer, the active layer is located at semiconductor layer, and gate insulating layer is equipped between the grid layer and the semiconductor layer；
Each semiconductor resistor is located at the semiconductor layer.
5. array substrate according to claim 4, which is characterized in that set between the semiconductor layer and the source-drain electrode layer
There is the first insulating layer；
The voltage applying circuit is located at the source-drain electrode layer, and the voltage applying circuit is by first through hole respectively with described half
First connecting pin of conductor pressure sensor and second connection end electrical connection.
6. array substrate according to claim 5, which is characterized in that it further include third metal layer, the third metal layer
Second insulating layer is equipped between the source-drain electrode layer；
The voltage detecting circuit is located at the source-drain electrode layer, the voltage detecting circuit by the first through hole respectively with institute
State third connecting pin and the electrical connection of the 4th connecting pin of semiconductor pressure sensor；Alternatively, the voltage detecting circuit includes position
First part in the source-drain electrode layer and the second part positioned at the third metal layer, the first of the voltage detecting circuit
Part is electrically connected by the first through hole with the third connecting pin of the semiconductor pressure sensor, the voltage detecting circuit
Second part be electrically connected with the 4th connecting pin of the semiconductor pressure sensor by the second through-hole.
7. array substrate according to claim 4, which is characterized in that the resistance correcting circuit is located at the grid layer,
And each resistance correcting circuit and the semiconductor resistor correspond；
Any resistance correcting circuit and the corresponding semiconductor resistor are in the direction perpendicular to the array substrate
It is upper least partially overlapped.
8. array substrate according to claim 7, which is characterized in that the first electricity of any resistance correcting circuit input
When pressure signal changes, the resistivity of semiconductor resistor corresponding with resistance correcting circuit described in this changes.
9. array substrate according to claim 1, which is characterized in that further include driving chip, the driving chip is used for
Voltage signal is provided for the voltage applying circuit and the resistance correcting circuit.
10. array substrate according to claim 1, which is characterized in that the preset initial value of the compliance voltage is zero.
11. a kind of touch-control display panel, which is characterized in that including the array substrate as described in one of claim 1-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710522189.4A CN107134462B (en) | 2017-06-30 | 2017-06-30 | Array substrate and touch-control display panel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710522189.4A CN107134462B (en) | 2017-06-30 | 2017-06-30 | Array substrate and touch-control display panel |
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| CN107134462A CN107134462A (en) | 2017-09-05 |
| CN107134462B true CN107134462B (en) | 2019-09-03 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107340084B (en) * | 2017-07-10 | 2020-04-03 | 厦门天马微电子有限公司 | Pressure detection display device |
| CN107526480B (en) * | 2017-09-22 | 2020-04-28 | 厦门天马微电子有限公司 | Display panel and display device |
| CN110728952B (en) * | 2019-10-31 | 2021-04-30 | 厦门天马微电子有限公司 | Pixel driving circuit, driving method thereof and display device |
| CN113268151B (en) | 2020-02-14 | 2023-07-07 | 华为技术有限公司 | Display module, electronic equipment and control method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102156019A (en) * | 2011-03-28 | 2011-08-17 | 豪展医疗科技股份有限公司 | Pressure sensor |
| CN105511679A (en) * | 2015-12-25 | 2016-04-20 | 上海天马微电子有限公司 | glass substrate, touch display screen and touch pressure calculation method |
| CN106020563A (en) * | 2016-08-09 | 2016-10-12 | 上海天马微电子有限公司 | Display panel and display device |
-
2017
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102156019A (en) * | 2011-03-28 | 2011-08-17 | 豪展医疗科技股份有限公司 | Pressure sensor |
| CN105511679A (en) * | 2015-12-25 | 2016-04-20 | 上海天马微电子有限公司 | glass substrate, touch display screen and touch pressure calculation method |
| CN106020563A (en) * | 2016-08-09 | 2016-10-12 | 上海天马微电子有限公司 | Display panel and display device |
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| CN107134462A (en) | 2017-09-05 |
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