WO2022074094A1 - Appareil et procédé pour générer une ligne laser définie sur un plan de travail - Google Patents

Appareil et procédé pour générer une ligne laser définie sur un plan de travail Download PDF

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Publication number
WO2022074094A1
WO2022074094A1 PCT/EP2021/077643 EP2021077643W WO2022074094A1 WO 2022074094 A1 WO2022074094 A1 WO 2022074094A1 EP 2021077643 W EP2021077643 W EP 2021077643W WO 2022074094 A1 WO2022074094 A1 WO 2022074094A1
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WO
WIPO (PCT)
Prior art keywords
axis
optical
working plane
short
plateau
Prior art date
Application number
PCT/EP2021/077643
Other languages
German (de)
English (en)
Inventor
Andreas Heimes
Julian Hellstern
Original Assignee
Trumpf Laser- Und Systemtechnik Gmbh
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Filing date
Publication date
Application filed by Trumpf Laser- Und Systemtechnik Gmbh filed Critical Trumpf Laser- Und Systemtechnik Gmbh
Publication of WO2022074094A1 publication Critical patent/WO2022074094A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask

Definitions

  • the present invention relates to a device for generating a defined laser line on a working plane, with a laser light source that is set up to generate a raw laser beam, and with an optical arrangement that receives the raw laser beam and along an optical axis to form an illumination beam reshaped, wherein the illumination beam defines a beam direction that intersects the working plane, wherein the illumination beam has a beam profile in the region of the working plane which has a long axis with a long-axis beam width and a short axis with a short-axis beam width perpendicular to the beam direction, the optical arrangement is movable relative to the working plane along a direction of movement in order to process a workpiece with the aid of the illumination beam, and wherein the beam profile has a defined intensity curve over the short-axis beam width, which has a flank leading in the direction of movement e trailing edge in the direction of movement and one lying between the leading edge and the trailing edge Plateau has a higher intensity level in the area of the leading edge than in the area of the
  • the invention also relates to a method for generating a defined laser line on a working plane, with the steps
  • an optical arrangement that receives the raw laser beam and transforms it along an optical axis into an illumination beam that defines a beam direction that intersects the working plane, the optical arrangement having a plurality of optical elements and being movable relative to the working plane along a direction of movement to process a workpiece using the illumination beam, and
  • the illumination beam in the area of the working plane is given a beam profile which, perpendicular to the beam direction, has a long axis with a long-axis beam width and a short axis with a short-axis beam width, the beam profile having a defined intensity curve over the short-axis beam width which has an in direction of movement leading edge, a trailing edge in the direction of movement and a plateau lying between the leading edge and the trailing edge, and wherein the plateau has a higher intensity level in the area of the leading edge than in the area of the trailing edge.
  • the known device generates linear laser illumination on a work plane in order to machine a workpiece.
  • the workpiece can be amorphous silicon on a carrier plate.
  • the amorphous silicon is using the Laser line melted line by line and converted to polycrystalline silicon by cooling.
  • Such an application is often referred to in practice as solid state laser annealing (SLA) or excimer laser annealing (ELA).
  • a laser line is required on the working plane, which is as long as possible in one direction in order to cover the widest possible working area, and which is very short in comparison in the other direction in order to create a laser line for the respective Provide process required energy density. Accordingly, a long, thin laser line parallel to the working plane is desirable.
  • the direction in which the laser line runs is usually referred to as the long axis and the line thickness as the short axis of the so-called beam profile.
  • the laser line should have a defined intensity curve in both axes.
  • the laser line it is desirable for the laser line to have an intensity profile that is as rectangular as possible or possibly trapezoidal in the long axis, with the latter being advantageous if several such laser lines are to be joined together to form a longer overall line.
  • an ideally rectangular intensity profile (so-called top hat profile) is usually desired for SLA applications, which has a leading edge in the direction of movement, a trailing edge in the direction of movement and a flat plateau between the leading edge and the trailing edge.
  • US 2014/0027417 A1 describes that a modified, to a certain extent two-stage top hat profile for an SLA or ELA process is advantageous because the formation of the polycrystalline silicon takes place in several successive steps during the relative movement of the laser line and the optimal energy density for melting the material in the course of the movement.
  • the laser line is pulsed as it moves relative to the workpiece, and each section of the workpiece is illuminated with approximately 20 laser pulses during movement. The laser pulses melt the silicon several times and change its properties.
  • US 2014/0027417 A1 proposes generating the beam profile of the laser line using two raw laser beams that overlap in the area of the working plane.
  • the optical arrangement includes a separate beam path for each of the two raw laser beams.
  • Each of the two beam paths produces a largely top-hat shaped beam profile in the short axis.
  • the two Top Hat spray profiles are in the direction of the short zen axis offset from each other on the working plane, resulting in a beam profile with a defined step that separates two largely flat plateau sections.
  • a disadvantage of this solution is the effort involved in providing two raw laser beams and two parallel beam paths.
  • a device of the type mentioned is specified here, the optical arrangement being adjusted in such a way that the plateau receives an intensity level that falls continuously on average. Furthermore, a method of the type mentioned at the outset is specified, in which the optical elements are adjusted in such a way that the plateau is given an intensity level that falls continuously on average.
  • the illumination beam is preferably generated in pulses, in particular by the laser light source emits the raw laser beam in pulses.
  • the intensity curve of the beam profile in the short axis falls here against the direction of movement largely linearly from a higher first level in the area of the leading edge to a lower second level in the area of the trailing edge.
  • the intensity profile of the new device and the corresponding method is therefore similar to a pent roof.
  • a pent roof is a roof shape with only one sloping roof surface. Accordingly, the beam profile has a pent roof-shaped intensity curve in the short axis.
  • the plateau is preferably step-free.
  • the intensity curve of the device and the method is not ideally flat in reality, but can have small waves and ripples in the plateau that is inclined counter to the direction of movement. Small waves and ripples are unavoidable due to diffraction effects and manufacturing tolerances. However, the waves and ripples are small compared to the height of the plateau and can be ignored in an idealized view. In some embodiments, the waves and Ripple less than 10%, preferably less than 5% based on the intensity level of the plateau. Accordingly, the plateau of the new device and the method falls continuously on average against the direction of movement, in particular when considering a regression line drawn through the waves and ripples.
  • the new device and the method allow a more homogeneous workpiece processing due to the continuous waste. In addition, they allow in principle a simpler and more cost-effective implementation with only one raw laser beam. As a result, the new device and the method can be implemented with older, already existing devices by readjusting the optical elements in the beam path for the short-axis profile in the manner indicated. The subsequent installation of additional optical elements is conceivable, but not usually necessary. As has been shown, the pent-roof intensity profile can in many cases already be achieved by changing the fine adjustment of the optical elements. The above task is therefore solved in a simple and cost-effective manner.
  • the optical arrangement is set up to generate the plateau with a single raw laser beam. Accordingly, in preferred embodiments, the plateau is generated with a single raw laser beam.
  • the new device and the method benefit from the advantageous options already indicated above.
  • a homogeneous SLA processing of a workpiece is made possible in a particularly cost-effective manner.
  • the optical assembly includes a plurality of optical elements forming a beam path with respect to the short axis of the beam profile, one optical element of the plurality of optical elements being an objective lens at the end of the beam path, and where the beam path illuminates the objective lens off-centre.
  • the objective lens focuses the illumination beam onto the work plane.
  • the objective lens has a predominant power with respect to the short axis of the beam profile and is non-functional with respect to the long axis of the beam profile.
  • the short-axis beam path places the laser beam to be reshaped on the objective lens asymmetrically with respect to the optical axis of the short-axis beam path.
  • spherical aberrations of the objective lens have a greater influence on the laser beam to be reshaped on one side of the optical axis than on the other side.
  • a targeted adjustment of the optical elements in the short-axis beam path can advantageously contribute to illuminating the objective lens off-centre in order to implement the pent-roof-shaped inclined plateau in the intensity profile of the short-axis beam profile in a simple and cost-effective manner.
  • the multiplicity of optical elements has a telescopic lens in the beam path, the telescopic lens being arranged eccentrically with respect to the optical axis.
  • This configuration is a very cost-effective way of producing the pent-roof-shaped plateau, since a telescopic arrangement in the (short-axis) beam path of the optical arrangement is often required anyway.
  • the telescopic lens has a predominant refractive power with respect to the short axis of the beam profile and has no function with respect to the long axis of the beam profile.
  • the eccentrically adjusted telescopic lens can contribute in a simple and cost-effective manner to placing the laser beam to be reshaped off-center on the aforementioned objective lens, in order to form the sloping plateau.
  • the multiplicity of optical elements has a telescopic lens in the beam path, the telescopic lens being arranged at an angle in relation to the optical axis.
  • This configuration is also a very cost-effective way of producing the pent-roof-shaped plateau, since a telescopic arrangement in the (short-axis) beam path of the optical arrangement is often required anyway.
  • the telescopic lens has a predominant refractive power with respect to the short axis of the beam profile and has no function with respect to the long axis of the beam profile.
  • the obliquely arranged telescopic lens can be implemented by rotating the telescopic lens about the long axis when adjusting the optical arrangement.
  • the telescopic lens can be arranged eccentrically with respect to the optical axis of the short-axis beam path and also at an angle with respect to the optical axis of the short-axis beam path or rotated about the long axis.
  • the inclination of the plateau can be optimized in a simple and inexpensive manner.
  • the multiplicity of optical elements has a multiplicity of mirrors which fold the beam path, with at least one mirror from the multiplicity of mirrors being set up to illuminate the objective lens off-centre.
  • the folding of the beam path in particular in relation to the short axis, enables a compact design of the new device.
  • the tilting of the plateau can be implemented in a very simple and cost-effective manner.
  • a high beam quality can be achieved with this configuration, in that the lenses of the optical arrangement are primarily adjusted in relation to high beam quality, while the inclination of the plateau is realized with the aid of one or more folding mirrors.
  • the plateau can be tilted both by adjusting the lenses, as explained above, and by adjusting one or more mirrors, which enables flexible optimization of the new device.
  • FIG. 4 shows the intensity curve of a short-axis beam profile according to an exemplary embodiment of the new device and the new method.
  • FIG. 1 an embodiment of the new device is denoted in its entirety by the reference numeral 10.
  • the device 10 generates a laser line 12 in the area of a working plane 14 in order to machine a workpiece 16 that is placed in the area of the working plane 14 here.
  • the laser line 12 here runs in the direction of an x-axis (FIG. 2) and the line width is viewed here in the direction of the y-axis. Accordingly, the x-axis designates the long axis below and the y-axis designates the short axis of the beam profile formed on the working plane 14 (FIG. 2).
  • the workpiece 16 can contain a layer of amorphous silicon, which is melted using the laser line 12 and converted to polycrystalline silicon.
  • 1 shows the device 10 in a simplified and schematic representation of the short-axis beam path 18, which forms the short axis of the laser line. Accordingly, the laser line is in the "side view" of Fig. 1 (along the x-axis) only visible as a point.
  • the laser line 12 can be moved relative to the workpiece 16 in the direction of the arrow 20.
  • the device 10 has a laser light source 22, which can be, for example, a solid-state laser that generates laser light in the infrared range or in the UV range.
  • the laser light source 22 can include a Nd:YAG laser with a wavelength in the range of 1030 nm.
  • the laser light source 22 may include diode lasers, excimer lasers, or solid-state lasers that each generate laser light having wavelengths between 150 nm and 360 nm, 500 nm and 530 nm, or 900 nm to 1070 nm.
  • the laser light source 22 emits a raw laser beam 24 which can be coupled into an optical arrangement 26 via a glass fiber, for example.
  • the raw laser beam 24 is converted with the optical arrangement 26 into an illumination beam 28 which defines a beam direction 29 .
  • the beam direction 29 intersects the working plane 14.
  • the optical arrangement 26 includes a beam transformer 30 which expands the raw laser beam 24 in the x-direction (corresponding to the long axis).
  • the beam transformer 30 can be implemented like the beam transformer described in detail in WO 2018/019374 A1. Accordingly, WO 2018/019374 A1 is incorporated here by reference in relation to the beam transformer and further details of the optical arrangement, such as in particular the long-axis beamforming.
  • the beam transformer 30 may include a transparent, monolithic, plate-shaped element having a front side and a back side that are substantially parallel to each other.
  • the plate-shaped element can be arranged at an acute angle to the raw laser beam 24 .
  • the front and back can each have a reflective coating, so that the raw laser beam 24, which is coupled obliquely into the plate-shaped element on the front, experiences multiple reflections in the plate-shaped element before it emerges fanned out at the back of the plate-shaped element.
  • the optical arrangement 26 includes a long-axis optics, not shown here, which forms the reshaped raw laser beam 24 in the long axis.
  • the long-axis optics can contain one or more microlens arrays (not shown here) and one or more lenses with positive optical power predominantly in the long axis.
  • the microlens arrays and the one or more lenses can include cylindrical lenses that extend in the y-direction and in particular form an imaging homogenizer that homogenizes the raw laser beam 24 in the long axis in order to obtain an advantageous top hat intensity profile in the long axis.
  • the optical arrangement 26 also includes a plurality of optical elements 32, 34, 36, 38, which form the expanded raw laser beam in the short axis and focus it on the working plane.
  • the optical elements 32, 34, 36, 38 are arranged along an optical axis 40 and here include a first lens 32 and a second lens 34 which together form a telescope assembly 42.
  • Reference number 38 symbolizes a mirror arrangement with a multiplicity of mirrors 44, 46, 48 (see FIG. 2), which fold the beam path 18 in the short axis.
  • the optical element 38 is an objective lens here, which focuses the illumination beam 28 onto the working plane 14 .
  • the optical arrangement 26 is set up to generate the illumination beam 28 with a defined beam profile 50 in the area of the working plane 14 .
  • 3 shows such a beam profile 50 in an idealized representation.
  • the beam profile 50 describes the intensity I of the laser radiation on the working plane 14 as a function of the respective positions along the x-axis and the y-axis.
  • the beam profile 50 has a long axis 52 with a long-axis beamwidth in the x-direction and a short axis 54 with a short-axis beamwidth in the y-direction.
  • the short-axis beamwidth 54 can be defined, for example, as a full width at half maximum (FWHM) or as a width between the 90% intensity values (Full Width at 90% Maximum, FW@90%).
  • the beam profile 50 here has a top hat profile in the short axis with a first flank 56, a second flank 58 and a plateau 60, which falls continuously from the first flank 56 to the second flank 58.
  • the plateau 60 preferably falls largely linearly from the first flank 56 to the second flank 58, as is shown in simplified form in FIG.
  • the beam profile 50 is moved parallel to the y-axis relative to the working plane 14 in order to process a workpiece 16 .
  • the workpiece 16 is arranged on a table which can be moved in the y-direction. Accordingly, the first flank 56 leads in the direction of movement 20, the second flank 58 lags behind in the direction of movement 20 (FIG. 2).
  • the plateau 60 is inclined counter to the direction of movement and has the shape of a pent roof in a view parallel to the x-axis.
  • the short-axis beam profile with the flanks 56, 58 and the plateau 60 is shown greatly enlarged in FIGS. 1 and 2 for illustration purposes.
  • the short-axis beam width FWHM is in a range between 50 ⁇ m and 150 ⁇ m.
  • the long axis beam width can be in a range between 20mm and 1200mm.
  • a real short-axis beam profile 62 has various ripples and waves, particularly in the area of the plateau 60.
  • the Edges 56, 58 have a finite edge steepness, although ideally a vertical edge would be desirable in each case.
  • Reference numeral 64 designates a regression line, which can be a regression line through the ripple and waves 66, for example. It can be seen from the regression line 64 that the plateau 60 of the beam profile 62 is inclined here from the leading edge 56 to the trailing edge 58 . In the illustrated embodiment, the slope is about 3%. Preferably, the slope of the plateau 60 is between 0.5% and 5%, both inclusive.
  • the inclination of the plateau 60 is realized by a targeted adjustment of the optical elements 32, 34, 36, 38.
  • the telescope lens 34 and/or the mirrors 44, 46, 48 can be used in particular to adjust the short-axis beam path 18 in such a way that the objective lens 38 is illuminated eccentrically in relation to the optical axis 40.
  • the telescope lens 34 can be displaced along the optical axis, i.e. in the z-direction, as indicated by the arrow 68, and/or it can be pivoted about the long axis (parallel to the x-axis), as indicated by the arrow 70 is indicated.
  • off-centre illumination of the objective lens 38 and/or other lenses of the short-axis beam path 18 are shifted in the y-direction, as indicated by arrows 72 .
  • one or more mirrors 44, 46, 48 of the mirror assembly can be pivoted.
  • the telescope lens 32 was shifted by 100 m in the y-direction.
  • the telescope lens 34 was shifted by -40mm in the z-direction.
  • the telescope lens 34 can be pivoted here by an angle 74 of 0.5°.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention concerne un appareil pour générer une ligne laser définie (12) sur un plan de travail (14), ledit appareil comprenant une source de lumière laser (22) qui est conçue pour générer un faisceau laser brut (24). Ledit appareil comprend également un agencement optique (26) qui reçoit le faisceau laser brut (24) et le transforme le long d'un axe optique (40) en un faisceau d'éclairage (28). Le faisceau d'éclairage (28) définit une direction de faisceau (29) qui coupe le plan de travail (14) et présente, dans la zone du plan de travail (14), un profil de faisceau (50) qui présente, perpendiculairement à la direction du faisceau (29), un axe long (52) ayant une largeur de faisceau d'axe long et un axe court (54) ayant une largeur de faisceau d'axe court. L'agencement optique (26) peut être déplacé par rapport au plan de travail (14) le long d'une direction de déplacement (20) pour traiter une pièce à travailler (16) à l'aide du faisceau d'éclairage (28). Le profil de faisceau (50) présente un profil d'intensité défini (62) sur la largeur du faisceau d'axe court, ledit profil d'intensité ayant un bord d'attaque (56) dans la direction de déplacement (20), un bord de fuite (58) dans la direction de déplacement (20), et un plateau (60) situé entre le bord d'attaque (56) et le bord de fuite (58). Le plateau (60) présente un niveau d'intensité plus élevé dans la zone du bord d'attaque (56) que dans la zone du bord de fuite (58). L'agencement optique (26) est réglé de telle sorte que le plateau (60) présente un niveau d'intensité moyen (64) décroissant en continu.
PCT/EP2021/077643 2020-10-07 2021-10-07 Appareil et procédé pour générer une ligne laser définie sur un plan de travail WO2022074094A1 (fr)

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DE102020126269.8 2020-10-07
DE102020126269.8A DE102020126269A1 (de) 2020-10-07 2020-10-07 Vorrichtung und Verfahren zum Erzeugen einer definierten Laserlinie auf einer Arbeitsebene

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Publication number Priority date Publication date Assignee Title
DE102022105342A1 (de) 2022-03-08 2023-09-14 Trumpf Laser- Und Systemtechnik Gmbh Vorrichtung zum Erzeugen einer definierten Laserlinie auf einer Arbeitsebene

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US6274414B1 (en) * 1996-08-19 2001-08-14 Sanyo Electric Co., Ltd. Laser anneal method of a semiconductor layer
EP1400832A1 (fr) * 2002-09-19 2004-03-24 Semiconductor Energy Laboratory Co., Ltd. Homogénéisateur de faisceau et appareil d'irradiation par laser et méthode de fabrication d'un dispositif semiconducteur
US20050139830A1 (en) * 2003-10-24 2005-06-30 Kazuo Takeda Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors
US20060209310A1 (en) * 2004-12-22 2006-09-21 Holger Muenz Optical illumination system for creating a line beam
US20140027417A1 (en) 2012-07-24 2014-01-30 Coherent Gmbh Excimer laser apparatus projecting a beam with a selectively variable short-axis beam profile
WO2018019374A1 (fr) 2016-07-27 2018-02-01 Trumpf Laser Gmbh Éclairage de ligne laser
WO2020137399A1 (fr) * 2018-12-27 2020-07-02 株式会社ブイ・テクノロジー Procédé et dispositif de recuit laser

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GB9922576D0 (en) 1999-09-24 1999-11-24 Koninkl Philips Electronics Nv Laser system
KR100990251B1 (ko) 2003-12-23 2010-10-26 엘지디스플레이 주식회사 레이저 빔 프로파일 변형 필터를 포함하는 레이저 광학계
JP5526173B2 (ja) 2012-03-14 2014-06-18 株式会社東芝 レーザアニール方法、レーザアニール装置、および薄膜トランジスタの製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274414B1 (en) * 1996-08-19 2001-08-14 Sanyo Electric Co., Ltd. Laser anneal method of a semiconductor layer
EP1400832A1 (fr) * 2002-09-19 2004-03-24 Semiconductor Energy Laboratory Co., Ltd. Homogénéisateur de faisceau et appareil d'irradiation par laser et méthode de fabrication d'un dispositif semiconducteur
US20050139830A1 (en) * 2003-10-24 2005-06-30 Kazuo Takeda Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors
US20060209310A1 (en) * 2004-12-22 2006-09-21 Holger Muenz Optical illumination system for creating a line beam
US20140027417A1 (en) 2012-07-24 2014-01-30 Coherent Gmbh Excimer laser apparatus projecting a beam with a selectively variable short-axis beam profile
WO2018019374A1 (fr) 2016-07-27 2018-02-01 Trumpf Laser Gmbh Éclairage de ligne laser
WO2020137399A1 (fr) * 2018-12-27 2020-07-02 株式会社ブイ・テクノロジー Procédé et dispositif de recuit laser

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TW202220776A (zh) 2022-06-01

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