WO2022073397A1 - 电子设备、显示模组及其修复方法 - Google Patents

电子设备、显示模组及其修复方法 Download PDF

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Publication number
WO2022073397A1
WO2022073397A1 PCT/CN2021/115069 CN2021115069W WO2022073397A1 WO 2022073397 A1 WO2022073397 A1 WO 2022073397A1 CN 2021115069 W CN2021115069 W CN 2021115069W WO 2022073397 A1 WO2022073397 A1 WO 2022073397A1
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Prior art keywords
micro
pixel
led die
color
pixel unit
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PCT/CN2021/115069
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English (en)
French (fr)
Inventor
张健民
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Oppo广东移动通信有限公司
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Publication of WO2022073397A1 publication Critical patent/WO2022073397A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

Definitions

  • the present application relates to the field of display technology, and in particular, to an electronic device, a display module and a repair method thereof.
  • Micro light-emitting diode die is the core device for the development of next-generation display technology and equipment, and has become the focus of the current international research and development and industrialization of semiconductor optoelectronic devices.
  • the micro-LED die repair technology that cannot work normally needs to remove the micro-LED die, then clean the fixing area, and re-select qualified micro-LED die and fix it. In this way, the repair time is long and the repair precision is high.
  • the repair process especially the process of removing the micro-LED die, it is easy to damage the drive panel, resulting in repair failure.
  • Embodiments of the present application provide, on the one hand, a method for repairing a display module, including:
  • each of the pixel units including three first micro-LEDs and one micro-LED die;
  • the micro light emitting diode die is encapsulated in color resistance to replace the first micro light emitting diode that cannot work normally in the The light-emitting function in the pixel unit.
  • Embodiments of the present application further provide a display module, which is characterized in that, prepared by the above-mentioned method, there is no said microscopic light-emitting diode in the pixel unit of the first microscopic light-emitting diode that cannot work normally.
  • the LED die is not energized to work.
  • Embodiments of the present application further provide a display module, comprising:
  • the pixel unit layer is stacked with the driving substrate, the pixel unit layer includes a plurality of pixel units, each of the plurality of pixel units includes three first micro-LEDs and one second micro-LED, the first micro-LEDs Two micro-LEDs are used to replace the light-emitting function of the first micro-LED which is not working properly in the pixel unit; and
  • the transparent substrate is stacked with the pixel unit layer, and the pixel unit layer is located between the driving substrate and the transparent substrate.
  • Embodiments of the present application further provide an electronic device, which is characterized in that it includes a display screen assembly and a casing assembly, the display screen assembly is mounted on the casing assembly, and the display screen assembly includes a display screen cover plate and a casing assembly.
  • the display screen cover is arranged on the side of the display module away from the housing assembly.
  • FIG. 1 discloses a schematic structural diagram of an electronic device in an embodiment of the present application
  • FIG. 2 discloses a schematic structural diagram of a display screen assembly in an embodiment of the present application
  • FIG. 3 discloses a schematic diagram of a partial structure of a display module in an embodiment of the present application
  • FIG. 4 discloses a partial structural schematic diagram of a display module in an embodiment of the present application
  • FIG. 5 discloses a flowchart of a repair method in an embodiment of the present application
  • FIG. 6 discloses a schematic structural diagram of a display module in an embodiment of the present application.
  • FIG. 8 discloses a partial flowchart of a repair method in an embodiment of the present application.
  • FIG. 9 discloses a schematic structural diagram of a display module in a repairing process according to an embodiment of the present application.
  • FIG. 11 discloses a schematic structural diagram of a display module in a repairing process according to an embodiment of the present application
  • FIG. 14 discloses a partial structural schematic diagram of a display module in an embodiment of the present application.
  • FIG. 15 discloses a partial structural schematic diagram of a display module in an embodiment of the present application.
  • FIG. 17 discloses a driving circuit diagram for driving two B sub-pixels in an embodiment of the present application.
  • FIG. 18 discloses a partial structural schematic diagram of a display module in an embodiment of the present application.
  • FIG. 19 discloses a partial structural schematic diagram of a display module in an embodiment of the present application.
  • FIG. 20 discloses a partial structural schematic diagram of a display module in an embodiment of the present application.
  • FIG. 21 discloses a schematic structural diagram of a pixel unit in an embodiment of the present application.
  • FIG. 22 discloses a schematic structural diagram of a pixel unit in an embodiment of the present application.
  • FIG. 25 discloses a schematic diagram of wiring and control of the Micro LED in the pixel unit according to an embodiment of the present application.
  • “electronic equipment” (which may also be referred to as “terminal” or “mobile terminal” or “electronic device”) includes, but is not limited to, being configured to be connected via a wired line (eg, via a public switched telephone network (PSTN). ), digital subscriber line (DSL), digital cable, direct cable connection, and/or another data connection/network) and/or via (eg, for cellular networks, wireless local area networks (WLAN), digital such as DVB-H networks Television network, satellite network, AM-FM broadcast transmitter, and/or another communication terminal's) wireless interface to receive/transmit communication signals.
  • PSTN public switched telephone network
  • DSL digital subscriber line
  • WLAN wireless local area networks
  • DVB-H networks Television network satellite network
  • AM-FM broadcast transmitter AM-FM broadcast transmitter
  • a communication terminal arranged to communicate through a wireless interface may be referred to as a "wireless communication terminal", “wireless terminal” or “mobile terminal”.
  • mobile terminals include, but are not limited to, satellite or cellular telephones; Personal Communication System (PCS) terminals that may combine cellular radio telephones with data processing, fax, and data communication capabilities; may include radio telephones, pagers, Internet/Intranet access , a PDA with a web browser, memo pad, calendar, and/or a global positioning system (GPS) receiver; and conventional laptop and/or palm-sized receivers or other electronic devices including radiotelephone transceivers.
  • PCS Personal Communication System
  • a mobile phone is an electronic device equipped with a cellular communication module.
  • the electronic device 100 may include a housing assembly 300 and a display screen assembly 600 .
  • the housing assembly 300 is used to carry the display screen assembly 600 .
  • the housing assembly 300 can also be used to carry electronic components such as a camera module, a battery, a motherboard, a processor, and various types of sensors in the electronic device 100 .
  • Display screen assembly 600 is used to display information.
  • the display screen assembly 600 is mounted on the housing assembly 300 .
  • the housing assembly 300 may be a housing-like structure as a whole, and an accommodation space may be provided inside to accommodate electronic components such as a camera module, a battery, a mainboard, a processor, and various types of sensors.
  • FIG. 2 discloses a schematic structural diagram of a display screen assembly 600 in an embodiment of the present application.
  • the display screen assembly 600 may include the display screen cover 10 and the display module 20 .
  • the display screen cover 10 and the display module 20 are stacked and arranged.
  • the display module 20 is the main structure of the display screen assembly 600 for displaying images.
  • the side of the display module 20 away from the display screen cover 10 is connected to the housing assembly 300 . That is, the display screen cover 10 is covered on the side of the display module 20 away from the casing assembly 300 .
  • the display screen cover 10 is used to transmit the light of the image displayed by the display module 20 .
  • the user can view the image displayed by the display module 20 through the display screen cover 10 .
  • the display screen cover 10 may be made of a light-transmitting material such as glass or resin, which is not specifically limited herein.
  • the display screen cover 10 is used to protect the display module 20 and the electronic components inside the electronic device 100 .
  • the display screen cover 10 can prevent the display module 20 from being damaged.
  • the user can view the screen displayed by the display module 20 through the display screen cover 10 .
  • the display module 20 may be an AMOLED (Active-matrix organic light emitting diode, active matrix organic light emitting diode or active matrix organic light emitting diode) display module, or a Micro LED (miniature light emitting diode).
  • the display module 20 is a Micro LED display module. Please refer to FIG. 3 , which discloses a partial structural schematic diagram of the display module 20 in an embodiment of the present application.
  • the display module 20 may include pixel units 21 arranged in a matrix. Each pixel unit 21 may be formed by arranging a plurality of sub-pixels in a matrix.
  • each pixel unit 21 may include four sub-pixels such as a first sub-pixel 211 , a second sub-pixel 212 , a third sub-pixel 213 and a fourth sub-pixel 214 .
  • the first sub-pixel 211 , the second sub-pixel 212 , the third sub-pixel 213 and the fourth sub-pixel 214 may be arranged in a 2 ⁇ 2 matrix.
  • first”, “second” and “third” in this application are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as “first”, “second”, “third” may expressly or implicitly include at least one of that feature.
  • one of the first sub-pixel 211, the second sub-pixel 212, and the third sub-pixel 213 may be an R sub-pixel (red sub-pixel), and one of the other two may be a G sub-pixel ( Green sub-pixel), the remaining one can be B sub-pixel (blue sub-pixel), and the fourth sub-pixel 214 can be one of R sub-pixel, G sub-pixel, B sub-pixel, W sub-pixel (white sub-pixel) one.
  • FIG. 4 discloses a partial structural diagram of the display module 20 in an embodiment of the present application.
  • the first subpixel 211 may be an R subpixel
  • the second subpixel 212 may be a G subpixel
  • the third subpixel 213 may be a B subpixel
  • the fourth subpixel 214 may be an R subpixel, a G subpixel, and a B subpixel.
  • the fourth subpixel 214 may be a W subpixel.
  • Miniature light-emitting diodes are the core devices for the development of next-generation display technologies and equipment, and the application of the core technology of miniature light-emitting diodes in the display field is facing a major breakthrough.
  • problems in its industrialization such as: miniaturization and arraying, mass transfer and color conversion of chips, detection and repair, etc., among which mass transfer and repair technology are the key technologies that need to be broken first. Due to the corresponding relationship between the transfer yield and the number of damages to the micro-LEDs, in addition to improving the yield of the mass transfer, improving the repairing ability of the micro-LEDs for damage is the top priority for improving the yield.
  • a method for repairing a display module which can be used to repair the damaged sub-pixels in the above-mentioned display module 20, by using the fourth sub-pixel 214 to replace other damaged sub-pixels (it can also be said that it cannot be working subpixels). For example, if the first sub-pixel 211 is a damaged sub-pixel, then the fourth sub-pixel 214 is used to replace the first sub-pixel 211 . If none of the other sub-pixels except the fourth sub-pixel 214 in one pixel unit 21 are damaged sub-pixels, that is, the other sub-pixels except the fourth sub-pixel 214 are not damaged or failed.
  • the fourth sub-pixel 214 in the pixel unit 21 may not emit light, for example, the fourth sub-pixel 214 is not energized to work, that is, the fourth sub-pixel 214 is turned off, for example, the fourth sub-pixel 214 is shielded and protected from light.
  • Step S001 Transfer a plurality of pixel units to be processed onto a driving substrate.
  • FIG. 6 discloses a schematic structural diagram of the display module 20 according to an embodiment of the present application.
  • the display module 20 may include a pixel unit 21 , a driving substrate 22 and a transparent substrate 23 .
  • the pixel unit 21 constitutes a pixel unit layer.
  • the transparent substrate 23 , the pixel unit layer and the driving substrate 22 are stacked in sequence.
  • a driving circuit layer 221 composed of driving circuits is disposed on the driving substrate 22 , and the driving circuits are used to communicate with sub-pixels in the pixel unit 21 , such as the first sub-pixel 211 , the second sub-pixel 212 , the third sub-pixel 213 and the fourth sub-pixel 213 .
  • the pixels 214 are electrically connected to realize the function of driving sub-pixels such as the first sub-pixel 211 , the second sub-pixel 212 , the third sub-pixel 213 and the fourth sub-pixel 214 to display.
  • the driving circuit layer 221 is disposed on the side of the driving substrate 22 facing the pixel unit layer.
  • the color filter color resist layer can control the chromaticity of the first micro-LED die and the micro-LED die by the precision of the coating thickness. It can be understood that a color filter color resist layer such as the first color filter color resist layer can be used to encapsulate the first micro light emitting diode die to form the first micro light emitting diode.
  • the color filter color resist layer such as the second color filter color resist layer, can be used to encapsulate the micro light emitting diode die to form the second micro light emitting diode.
  • any one of the micro LED die and the micro LED die with white light emission color is Chroma.
  • the red color film color resist layer can make the chromaticity uniformity of the micro-LED die with red light-emitting color better.
  • the second sub-pixel 212 may include a first micro LED die 2121 and a first color filter layer 2122 .
  • the first micro LED die 2121 is electrically connected to the driving circuit.
  • the first color filter color resist layer 2122 is disposed on the side of the first micro-LED die 2121 away from the driving circuit layer 221 for changing the chromaticity of the first micro-LED die 2121 .
  • the second sub-pixel 212 is a G sub-pixel, and the first micro-LED die 2121 can be a micro-LED die with a red light emission color, a micro LED die with a green light-emitting color, or a micro-LED die with a blue light-emitting color. Any one of the micro LED die and the micro LED die with white light emission color. Chroma.
  • the green color filter layer can make the chromaticity uniformity of the micro-LED die with a green light-emitting color better.
  • the third sub-pixel 213 may include a first micro LED die 2131 and a first color filter layer 2132 .
  • the first micro LED die 2131 is electrically connected to the driving circuit.
  • the first color filter color resist layer 2132 is disposed on the side of the first micro LED die 2131 away from the driving circuit layer 221 for changing the chromaticity of the first micro LED die 2131 .
  • the third sub-pixel 213 is a B sub-pixel, and the first micro-LED die 2131 can be a micro-LED die with a red light-emitting color, a micro-LED die with a green light-emitting color, or a micro-LED die with a blue light-emitting color.
  • any one of the micro LED die and the micro LED die with white light emission color Chroma.
  • the blue color film color resist layer can make the chromaticity uniformity of the micro-LED die with blue light-emitting color better.
  • the fourth sub-pixel 214 may include a micro LED die 2141 and a second color filter layer 2142 .
  • the micro LED die 2141 is electrically connected to the driving circuit.
  • the second color filter layer 2142 is disposed on the side of the micro LED die 2141 away from the driving circuit layer 221, and is used to change the chromaticity of the micro LED die.
  • the fourth sub-pixel 214 is a B sub-pixel
  • the micro-LED die 2141 can be a micro-LED die with a red light-emitting color, a micro-LED die with a green light-emitting color, or a micro-LED with a blue light-emitting color
  • the second color filter layer 2142 is a blue color filter layer, which is used to change the chromaticity of the micro LED chips 2141 .
  • the color of the micro LED die 2141 is the same as the color of the second color filter color resist layer 2142 .
  • the color of the sub-pixel can be determined by the color of the color filter color resist layer, and it can also be said that the micro light emitting diode can be determined by the color of the color filter color resist layer.
  • a driving substrate 22 is prepared, which can be used to carry the above-mentioned sub-pixels, and is fabricated into the display module 20 .
  • the driving substrate 22 may be a transparent substrate such as a glass substrate, or may be a polyimide film. Within the range that can be understood by those skilled in the art, the driving substrate 22 may also be made of other materials, which will not be described here. limited.
  • one pixel unit to be processed may include three first micro-LED die and one micro-LED die.
  • FIG. 7 discloses a schematic structural diagram of the display module 20 after the transfer operation in an embodiment of the present application.
  • the display module 20 is fabricated by transferring a huge amount of micro-LED dies onto the driving substrate 22 .
  • the driving substrate 22 is provided with a driving circuit.
  • the first micro LED die 2111 , the first micro LED die 2121 , the first micro LED die 2131 and the micro LED die 2141 are respectively connected with the driving circuit on the driving substrate 22 .
  • the circuit is electrically connected.
  • a mass transfer method may be used in the process of transferring the pixel units to be processed.
  • Mass transfer method can be electrostatic mass transfer method, Van der Waals force mass transfer method, magnetic mass transfer method, Selective Release mass transfer method, Self-Assembly mass transfer method method and transfer (Roll Printing) mass transfer method, and the mass transfer method may not be specifically limited here. in:
  • the electrostatic mass transfer method uses a transfer head with a double-stage structure. During the transfer process, positive and negative voltages are respectively applied. The die will be adsorbed on the transfer head. When the micro LED die needs to be placed on the predetermined position of the driving substrate 22, the transfer can be completed by applying negative electricity to another silicon electrode.
  • Van der Waals force mass transfer method using elastic stamping, combined with high-precision motion control print head, using van der Waals force, by changing the speed of the print head, to make the micro LED die adhere to the transfer head, or print to the predetermined position of the drive substrate 22 .
  • magnetic materials such as iron, cobalt, and nickel are mixed on the micro-LED grains before cutting, and electromagnetic adsorption and release are used.
  • the selective release mass transfer method directly transfers the micro-LED grains from the original position.
  • the most commonly implemented method is patterned laser lift-off (p-LLO), that is, the excimer laser is used to irradiate the growth interface.
  • p-LLO patterned laser lift-off
  • the sparsely separated mold-sized areas on the gallium nitride sheet are then exposed to ultraviolet light to generate gallium and nitrogen, which are transferred to the substrate in parallel to achieve a precise optical array.
  • the self-assembly mass transfer method uses a brush cylinder to roll on the substrate, so that the micro LED die is placed in a liquid suspension, and the micro LED die is caused to fall into the corresponding well on the driving substrate 22 by fluid force.
  • Transfer mass transfer method mostly using roller transfer method, such as roll to roll process (Roll to Roll) transfer technology
  • the rolling method can be transferred and interconnected at the same time through mechanical deformation, and can control the micro LED die on the production line uniformity.
  • Step S002 Color-resistance packaging is performed on the three first micro-LED die respectively to form three first micro-LEDs.
  • Step S002 may include:
  • Step S011 arranging a black matrix on the driving substrate.
  • FIG. 9 discloses a schematic structural diagram of the display module 20 in the repairing process according to an embodiment of the present application.
  • the display module 20 may include a black matrix 215, and the black matrix 215 is disposed on the side of the driving substrate 22 where the driving circuit is disposed.
  • Black matrix 215 is used to define sub-pixels.
  • the black matrix 215 is provided with a plurality of accommodating spaces.
  • the black matrix 215 and the pixel units 21 can form a pixel unit layer.
  • Step S012 Disposing each of the first micro-LED die and the micro-LED die in each accommodating space in a one-to-one correspondence.
  • the first micro LED die 2111 , 2121 , 2131 and the micro LED die 2141 are separated by the black matrix 215 respectively.
  • the first micro-LED die and the micro-LED die can be transferred into each accommodating space by the transfer method in the above-mentioned embodiment.
  • Step S013 filling ink in the accommodating space provided with the first micro-LED die to cover the first micro-LED die.
  • FIG. 10 is a schematic structural diagram of the display module 20 in the repairing process according to an embodiment of the present application.
  • the accommodating space is filled with the first color filter layer.
  • the first color filter layer 2112 is filled in the accommodating space where the first micro LED die 2111 is located, and covers the first micro LED die 2111 .
  • the first color filter layer 2122 is filled in the accommodating space where the first micro-LED die 2121 is located, and covers the first micro-LED die 2121 .
  • the first color filter layer 2132 is filled in the accommodating space where the first micro-LED die 2131 is located, and covers the first micro-LED die 2131 .
  • the adjustment of the chromaticity of the crystal grains of the first micro light emitting diode by the first color filter color resist layer is realized.
  • the chromaticity of the micro-LED die can be precisely controlled by changing the coating thickness and color of the color filter layer.
  • the first micro-LED die 2111 is a micro-LED die with a red light emission color
  • the first micro-LED die 2121 is a micro-LED die with a green light-emitting color
  • the first micro light emitting diode die 2131 is a micro light emitting diode die whose emission color is blue.
  • the first color filter color resist layer 2112 filled in the accommodating space where the first micro LED die 2111 is located is a red color filter color resist layer, which is filled in the accommodating space where the first micro LED die 2121 is located.
  • the first color filter color resist layer 2122 in the space is a green color filter color resist layer
  • the first color filter color resist layer 2132 filled in the accommodating space where the first micro LED die 2131 is located is a blue color filter color resist layer. layer.
  • the light-emitting colors of the three first micro light-emitting diodes are red, blue, and green, respectively.
  • Step S003 providing a driving substrate provided with a plurality of pixel units.
  • one pixel unit 21 may include first micro-LED die 2111 , 2121 , 2131 and one micro-LED die 2141 .
  • Step S004 Detect whether each of the first micro light emitting diodes can work normally.
  • the damage of the sub-pixels is mostly due to the damage of the miniature light-emitting diodes, which can't work normally. Therefore, the detection of the micro-LEDs helps to ensure the pass rate of the display module 20, and is convenient for detecting the micro-LEDs that cannot work normally, such as the first micro-LEDs. 2111, 2121, 2131, micro-LED die for replacement.
  • the detection process can be performed before each first micro-LED die is packaged to form a first micro-LED, or after each first micro-LED die is packaged to form a first micro-LED, generally
  • the micro-LED die detection is performed before each first micro-LED die is packaged to form a first micro-LED die, so as to avoid the existence of 2-4 micro-LED die that cannot work normally in one pixel unit 21 . grain. Of course, the probability of this situation is extremely low. When it is ensured that a micro LED die that cannot work normally exists in one pixel unit 21, each first micro LED die can be packaged to form a first micro LED after the diode.
  • Step S005 If there is a first micro-LED that cannot work normally in the pixel unit, encapsulate the micro-LED die with color resistance to replace the light-emitting function of a non-working first micro-LED in the pixel unit.
  • the micro LED die 2141 can be packaged to replace the micro LED die that cannot work normally.
  • the packaging process for example, as shown in FIG. 10 , the first micro LED die 2111 cannot work normally, and the first sub-pixel 211 is an R sub-pixel, then the micro LED die 2141 needs to be packaged to form an R sub-pixel. pixel to replace the first sub-pixel 211 .
  • micro LED die 2141 By presetting the micro LED die 2141 as a backup, it can achieve the repair of the sub-pixels of a specific color, and finally realize the massive restoration of the micro LED die with low cost and high efficiency.
  • step S005 may include: filling ink in the accommodating space provided with the micro LED die 2141 to cover the micro LED die 2141 , and curing the package to form the second micro LED.
  • FIG. 11 discloses a schematic structural diagram of the display module 20 in a repairing process according to an embodiment of the present application.
  • the light-emitting color of the second micro-LED is the same as the original light-emitting color of the replaced first micro-LED, so that the fourth sub-pixel 214 can replace the sub-pixel that cannot work normally; the pixel provided with the second micro-LED
  • the color coordinate of the unit is the same as that of the pixel unit when each first micro-LED is working normally, so as to address the micro-LED die that cannot work normally and repair the micro-LED die that cannot work normally.
  • the first micro-LED die 2121 is the damaged first micro-LED die
  • the micro-LED die 2141 and the first micro-LED die 2121 are in the same pixel, so the micro-LED die 2141 is in the same pixel.
  • Die 2141 is used as a spare micro-LED die to replace the damaged first micro-LED die 2121, and the micro-LED die 2141 is packaged with color resistance to form a second micro-LED.
  • the light emission color is the same as the original light emission color of the replaced first micro light-emitting diode.
  • FIG. 12 discloses a schematic structural diagram of the display module 20 in the repair process in an embodiment of the present application.
  • the second color filter layer 2142 can control the chromaticity of the micro LED die 2141.
  • the micro LED die 2141 is a micro LED die with a white light emission color
  • the second color filter color resist layer 2142 is a green color.
  • the film color-resisting layer, the light-emitting color of the second micro light-emitting diode should be green.
  • the light emission color of the second micro LED is determined by the color of the second color filter color resist layer 2142 itself.
  • the second color filter color resist layer 2142 can be prepared into ink, and the inkjet printing process is used to fill the accommodating space where the micro LED die 2141 is located. Inside, wait for the ink to cure to encapsulate the micro LED die 2141 . In this process, the chromaticity of the micro-LED die can be precisely controlled by changing the coating thickness and color of the color filter layer.
  • FIG. 13 discloses a schematic structural diagram of a repair method in an embodiment of the present application. After step S004, the method may further include:
  • Step S021 attaching a transparent substrate to the side of the pixel unit away from the driving substrate.
  • the display module 20 also includes a transparent substrate 23, and the transparent substrate 23 is arranged on the side of the pixel unit layer away from the driving substrate 22, and is stacked and arranged with the pixel unit layer. Specifically, it can be connected and fixed by bonding, for example, the two can be directly bonded, or they can be bonded by optically transparent adhesive (OCA optical adhesive).
  • OCA optical adhesive optically transparent adhesive
  • the encapsulation of the pixel unit 21 is completed by the transparent substrate 23 and the black matrix 215 .
  • the transparent substrate 23 may be a transparent material such as glass or plastic.
  • the display screen cover 10 is disposed on the side of the display module 20 where the transparent substrate 23 is disposed.
  • the display screen cover 10 and the display module 20 may be bonded by optically clear adhesive (OCA optical adhesive).
  • OCA optical adhesive optically clear adhesive
  • the transparent substrate 23 may be omitted, and the display screen cover 10 is disposed on the side of the pixel unit layer away from the driving substrate 22 instead of the transparent substrate 23 , that is, the display screen cover 10 and the pixel unit layer are stacked.
  • the display module 20 manufactured by the above repair method may include a pixel unit layer, a driving substrate 22 and a transparent substrate 23 that are stacked in sequence, wherein each pixel unit 21 in the pixel unit layer is provided with a first sub-pixel 211. , a second sub-pixel 212 , a third sub-pixel 213 and a fourth sub-pixel 214 . And there is a pixel unit 21 with damaged sub-pixels in the pixel unit layer, and the fourth sub-pixel 214 in the pixel unit 21 with damaged sub-pixels replaces the damaged sub-pixel.
  • the fourth sub-pixel 214 can be matched with the micro LED die 2141 and the second color filter layer 2142, so that the emission color of the second micro LED is the same as that of the first non-working micro LED.
  • the display module 20 may include pixel units 21 arranged in a matrix. Each pixel unit 21 may be formed by arranging a plurality of sub-pixels in a matrix.
  • each pixel unit 21 may include four sub-pixels such as a first sub-pixel 211 , a second sub-pixel 212 , a third sub-pixel 213 and a fourth sub-pixel 214 .
  • the first sub-pixel 211 , the second sub-pixel 212 , the third sub-pixel 213 and the fourth sub-pixel 214 may be arranged in a 2 ⁇ 2 matrix.
  • one of the first sub-pixel 211, the second sub-pixel 212, and the third sub-pixel 213 may be an R sub-pixel, one of the other two may be a G sub-pixel, and the other one may be a G sub-pixel.
  • the fourth sub-pixel 214 may be a B sub-pixel.
  • the harmful blue light emission of the fourth subpixel 214 is lower than the harmful blue light emission of the subpixel that is another B subpixel.
  • the emission of blue light can be reduced by adjusting the luminous efficiency.
  • the luminous efficiency of the fourth sub-pixel 214 is lower than that of the sub-pixel serving as another B sub-pixel.
  • the first sub-pixel 211 and the fourth sub-pixel 214 are located in the same pixel row, and are located in the same pixel column as the third sub-pixel 213 .
  • the second sub-pixel 212 and the fourth sub-pixel 214 are located in the same pixel column, and are located in the same pixel row as the third sub-pixel 213 .
  • the third sub-pixel 213 is used as the B sub-pixel for normal display, and the fourth sub-pixel 214 may not be displayed.
  • the fourth sub-pixel 214 can also be displayed, which is not done here. Specific restrictions. In some eye protection usage scenarios, such as e-book reading, mobile phone use late at night, news reading, etc., the fourth sub-pixel 214 is used as a B sub-pixel for normal display (ie, emits light), and the third sub-pixel 213 is used as a B sub-pixel for normal display. displayed (ie, off).
  • the eye protection effect is achieved by reducing the harmful blue light emission of the B sub-pixels in the eye protection use scene.
  • the display module 20 may include a pixel unit 21 , a driving substrate 22 and a transparent substrate 23 .
  • the transparent substrate 23 , the pixel unit layer including the pixel unit 21 and the driving substrate 22 are stacked in sequence.
  • a driving circuit layer 221 composed of driving circuits is disposed on the driving substrate 22 , and the driving circuits are used to communicate with sub-pixels in the pixel unit 21 , such as the first sub-pixel 211 , the second sub-pixel 212 , the third sub-pixel 213 and the fourth sub-pixel 213 .
  • the pixels 214 are electrically connected to realize the function of driving sub-pixels such as the first sub-pixel 211 , the second sub-pixel 212 , the third sub-pixel 213 and the fourth sub-pixel 214 to display.
  • the driving circuit layer 221 is disposed on the side of the driving substrate 22 facing the pixel unit layer.
  • each sub-pixel may include a first micro LED die, a micro LED die, and a color filter layer (eg, a first color filter layer, a second color filter layer).
  • the first micro LED die and the micro LED die are arranged on the driving circuit.
  • the color filter color resist layer is disposed on the side of the first micro-LED die and the micro-LED die away from the driving circuit layer 221, and is used to control the chromaticity of the first micro-LED die and the micro-LED die. Therefore, the chromaticity uniformity of the first micro-LED die and the micro-LED die is better.
  • the color filter color resist layer can control the chromaticity of the first micro-LED die and the micro-LED die by the precision of the coating thickness.
  • the first sub-pixel 211 may include a first micro-LED die 2111 and a first color filter layer 2112 .
  • the first micro LED die 2111 is electrically connected to the driving circuit.
  • the first color filter color resist layer 2112 is disposed on the side of the first micro-LED die 2111 away from the driving circuit layer 221 for changing the chromaticity of the first micro-LED die 2111 .
  • the first sub-pixel 211 is an R sub-pixel, and the first micro-LED die 2111 may be a micro-LED die with a red light-emitting color, a micro-LED die with a green light-emitting color, or a micro-LED die with a blue light-emitting color.
  • any one of the micro LED die and the micro LED die with white light emission color is Chroma.
  • the red color film color resist layer can make the chromaticity uniformity of the micro-LED die with red light-emitting color better.
  • the second sub-pixel 212 may include a first micro LED die 2121 and a first color filter layer 2122 .
  • the first micro LED die 2121 is electrically connected to the driving circuit.
  • the first color filter color resist layer 2122 is disposed on the side of the first micro-LED die 2121 away from the driving circuit layer 221 for changing the chromaticity of the first micro-LED die 2121 .
  • the second sub-pixel 212 is a G sub-pixel, and the first micro-LED die 2121 can be a micro-LED die with a red light emission color, a micro LED die with a green light-emitting color, or a micro-LED die with a blue light-emitting color. Any one of the micro LED die and the micro LED die with white light emission color. Chroma.
  • the green color filter layer can make the chromaticity uniformity of the micro-LED die with a green light-emitting color better.
  • the third sub-pixel 213 may include a first micro LED die 2131 and a first color filter layer 2132 .
  • the first micro LED die 2131 is electrically connected to the driving circuit.
  • the first color filter color resist layer 2132 is disposed on the side of the first micro LED die 2131 away from the driving circuit layer 221 for changing the chromaticity of the first micro LED die 2131 .
  • the third sub-pixel 213 is a B sub-pixel, and the first micro-LED die 2131 can be a micro-LED die with a red light-emitting color, a micro-LED die with a green light-emitting color, or a micro-LED die with a blue light-emitting color.
  • any one of the micro LED die and the micro LED die with white light emission color Chroma.
  • the blue color film color resist layer can make the chromaticity uniformity of the micro-LED die with blue light-emitting color better.
  • the fourth sub-pixel 214 may include a micro LED die 2141 and a second color filter layer 2142 .
  • the micro LED die 2141 is electrically connected to the driving circuit.
  • the second color filter layer 2142 is disposed on the side of the micro LED die 2141 away from the driving circuit layer 221 , and is used to change the chromaticity of the micro LED die 2141 .
  • the fourth sub-pixel 214 is the B sub-pixel, and the micro-LED die 2141 may be a micro-LED die with a red light-emitting color, a micro-LED die with a green light-emitting color, or a micro-LED die with a blue light-emitting color.
  • the second color film color resist layer 2142 is a blue color film color resist layer, which is used to change the chromaticity of the micro light emitting diode die 2141 .
  • the micro LED die 2141 may be a micro LED die with a blue light emission color
  • the second color filter layer 2142 is a blue color filter layer.
  • the display module 20 may include a black matrix 215 , and the black matrix 215 is disposed on the side of the driving substrate 22 where the driving circuit is disposed.
  • the black matrix 215 is used to define sub-pixels, and the black matrix 215 is provided with a plurality of accommodating spaces.
  • the black matrix 215 and the pixel units 21 can form a pixel unit layer.
  • Each of the first micro-LED die 2111, 2121, 2131 and the micro-LED die 2141 are disposed in each accommodating space in a one-to-one correspondence.
  • the black matrix 215 is part of the pixel cell layer.
  • the first color filter layer 2112 is filled in the accommodating space where the first micro-LED die 2111 is located, and covers the first micro-LED die 2111 .
  • the first color filter layer 2122 is filled in the accommodating space where the first micro-LED die 2121 is located, and covers the first micro-LED die 2121 .
  • the first color filter layer 2132 is filled in the accommodating space where the first micro-LED die 2131 is located, and covers the first micro-LED die 2131 .
  • the adjustment of the chromaticity of the crystal grains of the first micro light emitting diode by the first color filter color resist layer is realized.
  • the first micro-LED die 2111 is a micro-LED die with a red light emission color
  • the first micro-LED die 2121 is a micro-LED die with a green light-emitting color
  • the first micro light emitting diode die 2131 is a micro light emitting diode die whose emission color is blue.
  • the first color filter color resist layer 2112 filled in the accommodating space where the first micro LED die 2111 is located is a red color filter color resist layer, which is filled in the accommodating space where the first micro LED die 2121 is located.
  • the first color filter color resist layer 2122 in the space is a green color filter color resist layer
  • the first color filter color resist layer 2132 filled in the accommodating space where the first micro LED die 2131 is located is a blue color filter color resist layer. layer.
  • the second color filter color resist layer 2142 can control the chromaticity of the micro LED die 2141 , for example, the micro LED die 2141 is a micro LED die with a white light emission color, The second color filter color resist layer 2142 is a blue color filter color resist layer, so the light-emitting color of the micro light-emitting diode should be blue.
  • the micro LED die 2141 is a micro LED die with a red light emission color
  • the second color filter color resist layer 2142 is a blue color film color resist layer, so the light emission color of the micro LED should be blue.
  • the display module 20 further includes a transparent substrate 23 .
  • the transparent substrate 23 is disposed on the side of the pixel unit layer away from the driving substrate 22 and stacked with the pixel unit layer. Specifically, it can be connected and fixed by bonding, for example, the two can be directly bonded, or they can be bonded by optically transparent adhesive (OCA optical adhesive).
  • OCA optical adhesive optically transparent adhesive
  • the encapsulation of the pixel unit 21 is completed by the transparent substrate 23 and the black matrix 215 .
  • the transparent substrate 23 may be a transparent material such as glass or plastic.
  • the display screen cover 10 is disposed on the side of the display module 20 where the transparent substrate 23 is disposed.
  • the display screen cover 10 and the display module 20 may be bonded by optically transparent adhesive.
  • the transparent substrate 23 may be omitted, and the display screen cover 10 is disposed on the side of the pixel unit layer away from the driving substrate 22 instead of the transparent substrate 23 , that is, the display screen cover 10 and the pixel unit layer are stacked.
  • each micro LED die is driven by a pixel driving module (a part of the driving circuit) disposed on the driving substrate 22 , so that each micro LED die is displayed. Since there are two B sub-pixels, it is necessary to jointly drive the two B sub-pixels. Please refer to FIG. 17 , which discloses a driving circuit diagram for driving two B sub-pixels in an embodiment of the present application.
  • the same output end of the pixel driving module 2211 is respectively connected to the first switch control module (Switch1) 2212 and the second switch control module (Switch2) 2213, and the first switch control module (Switch1) 2212 and
  • the first micro LED die 2131 is electrically connected, so that the first switch control module (Switch1) 2212 controls the first micro LED die 2131 to turn off or emit light
  • the second switch control module (Switch2) 2213 is connected to the micro LED die.
  • the chips 2141 are electrically connected, so that the second switch control module (Switch2) 2213 controls the micro LED chips 2141 to turn off or to emit light.
  • the first switch control module (Switch1) 2212 and the second switch control module (Switch2) 2213 are respectively controlled by a data signal. That is, the first micro LED die 2131 and the micro LED die 2141 belong to two rows, the first switch control module (Switch1) 2212 is controlled by the first switch control data signal Switch1, and the second switch control module (Switch2) 2213 is controlled by the first switch control data signal Switch1. The second switch is controlled by the data signal Switch2.
  • the first switch control module (Switch1) 2212 is used to control the first micro LED die 2131 to light up or turn off, and the second switch control module (Switch2) 2213 is used to control the micro LED die 2141 to light up or turn off.
  • the output terminal of the pixel driving module for driving the R sub-pixels can be electrically connected to the first micro-LED die 2111 directly.
  • the pixel driving module for driving the G sub-pixels can be electrically connected to the first micro-LED die 2121 directly at the output end.
  • the pixel driving module 2211 may include a first transistor T1, a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, a seventh transistor T7 and a capacitor C1.
  • the gate electrode of the first transistor T1 is used for first receiving the scan signal SCAN1, the first end thereof is used for receiving the reference voltage Vref, and the second end thereof is electrically connected to the first end of the capacitor C1 and the gate of the third transistor T3 pole, the first end of the fifth transistor T5.
  • the gate electrode of the second transistor T2 is used to receive the enable signal EMIT, the first end of the second transistor T2 is used to receive the positive power supply voltage ELVDD, and the second end is electrically connected to the first end of the third transistor T3 and the fourth transistor T4 the first end.
  • the second end of the third transistor T3 is electrically connected to the second end of the fifth transistor T5 and the first end of the sixth transistor T6.
  • the gate electrode of the fourth transistor T4 is used for receiving the second scan signal SCAN2, and the second terminal thereof is used for receiving the data voltage Vdata.
  • the gate electrode of the fifth transistor T5 is used for receiving the second scan signal SCAN2.
  • the gate electrode of the sixth transistor T6 is used for receiving the enable signal EMIT, and the second end thereof is respectively connected to the first switch control module (Switch1) 2212 and the second switch control module (Switch2) 2213 and the first switch of the seventh transistor T7. end.
  • the gate electrode of the seventh transistor T7 is used for receiving the first scan signal SCAN1, and the second terminal thereof is used for receiving the reference voltage Vref.
  • the first switch control module (Switch1) 2212 may include an eighth transistor T8, the gate electrode of the eighth transistor T8 is used to receive the first switch control data signal Swich1, and the first terminal of the eighth transistor T8 is electrically connected to the second terminal of the sixth transistor T6 , the second end of which is electrically connected to the anode of the first micro-LED die 2131 .
  • the second switch control module (Switch2) 2213 may include a ninth transistor T9, the gate electrode of the ninth transistor T9 is used for receiving the second switch control data signal Swich2, and the first terminal of the ninth transistor T9 is electrically connected to the second terminal of the sixth transistor T6 , the second end of which is electrically connected to the anode of the micro LED die 2141 .
  • the cathode of the first micro LED die 2131 and the cathode of the micro LED die 2141 are both connected to the negative power supply voltage ELVSS.
  • micro-LED die 2141 When there is no damage to the B sub-pixel when the micro-LED die is massively transferred in the display module 20, in the eye protection scenario, all the micro-LED die 2141 are sent to black, that is, the gray scale 0 is displayed.
  • the micro-LED die 2141 is controlled independently; on the contrary, when used in a normal scene, all the first micro-LED die 2131 are sent black.
  • the first micro-LED die 2131 or the micro-LED die 2141 in one pixel unit 21 is damaged once detected in the bulk transfer. There is only a single blue sub-pixel, whether in eye protection mode or normal mode.
  • the first micro-LED die 2131 and the micro-LED die 2141 will be sent corresponding display signals to light up (because one blue sub-pixel has been damaged, only one blue sub-pixel is actually illuminated) , that is, in the process of mass transfer, even if the first micro-LED die 2131 is damaged, the micro-LED die 2141 will be used as a backup to repair the first micro-LED die 2131 that cannot work normally. That is, the display module 20 in this embodiment can also improve the yield of the mass transfer of micro-LED die.
  • the display module 20 is an AMOLED display module.
  • sensors in electronic device 100 may include complementary metal-oxide-semiconductor sensors (CMOS Sensors), ie, imaging photosensitive cells.
  • CMOS Sensors complementary metal-oxide-semiconductor sensors
  • the CMOS Sensor can be used as the main component of fingerprint recognition under the screen.
  • the display module 20 emits light as a light source.
  • the light is imaged in the CMOS Sensor through the lens, and the information of the fingerprint image is used for fingerprint identification.
  • the brightness of the AMOLED display module is limited, which directly affects the speed of fingerprint unlocking and the success rate of unlocking.
  • the pixel unit 21 also referred to as a micro light-emitting diode pixel unit described in the above-mentioned embodiment is used in the AMOLED display module to improve the fingerprint unlocking speed and the unlocking success rate.
  • the display module 20 is an LCD (Liquid Crystal Display) display module or a QLED (Quantum dots Light-emitting Diodes) display module and other display modules that can attach fingerprint identification capabilities
  • the display module is also
  • the pixel unit 21 (which may also be referred to as a micro light emitting diode pixel unit) described in the above embodiments may be used.
  • the optical fingerprint recognition sensor can also be arranged inside the display module 20 according to the actual situation.
  • the display module 20 may include display main pixel units 24 arranged in a matrix.
  • Each display main pixel unit 24 may be formed by arranging a plurality of sub-pixels (also referred to as "display sub-pixels") in a matrix.
  • each display main pixel unit 24 may include four sub-pixels such as a first display sub-pixel 241 , a second display sub-pixel 242 , a third display sub-pixel 243 and a fourth display sub-pixel 244 .
  • the first display sub-pixel 241 , the second display sub-pixel 242 , the third display sub-pixel 243 and the fourth display sub-pixel 244 may be arranged in a 2 ⁇ 2 matrix.
  • FIG. 19 discloses a partial structural diagram of the display module 20 in an embodiment of the present application.
  • the fourth display sub-pixel 244 may be omitted, and the first display sub-pixel 241 , the second display sub-pixel 242 , and the third display sub-pixel 243 may be arranged in a 1 ⁇ 3 matrix.
  • one of the first display sub-pixel 241 , the second display sub-pixel 242 , and the third display sub-pixel 243 may be an R sub-pixel, and one of the other two may be a G sub-pixel Of the sub-pixels, the remaining one may be a B sub-pixel, and the fourth display sub-pixel 244 may be one of an R sub-pixel, a G sub-pixel, a B sub-pixel, and a W sub-pixel.
  • the first display sub-pixel 241 and the fourth display sub-pixel 244 are located in the same pixel row, and are located in the same pixel column as the second display sub-pixel 242 .
  • the third display sub-pixel 243 and the fourth display sub-pixel 244 are located in the same pixel column, and are located in the same pixel row as the third display sub-pixel 243 .
  • FIG. 20 discloses a partial structural diagram of the display module 20 in an embodiment of the present application.
  • the first display sub-pixel 241 may be an R sub-pixel
  • the second display sub-pixel 242 may be a G sub-pixel
  • the third display sub-pixel 243 may be a B sub-pixel
  • the fourth display sub-pixel 244 may be an R sub-pixel, a G sub-pixel One of a pixel, a B sub-pixel, and a W sub-pixel.
  • the fourth display sub-pixel 244 may be a G sub-pixel.
  • a micro light-emitting diode pixel unit is arranged in the area between any four adjacent display sub-pixels arranged in a 2 ⁇ 2 matrix in the fingerprint unlocking area.
  • a fingerprint unlocking area 25 is arranged in the display module 20
  • a micro LED pixel is arranged in the area between any four adjacent display sub-pixels unit (ie, the pixel unit 21 in the above embodiment).
  • the pixel unit 21 may include a first micro LED pixel unit 26 and an infrared micro LED pixel unit 27 .
  • the first micro LED pixel unit 26 and the infrared micro LED pixel unit 27 are arranged at intervals.
  • one of the first micro-LED pixel unit 26 and the infrared micro-LED pixel unit 27 may be omitted.
  • the miniature light-emitting diode pixel units arranged between the display sub-pixels are arranged in a uniform arrangement, and of course they can also be arranged in a matrix in the display sub-pixels, but not limited to any four adjacent and arranged in a 2 ⁇ 2 matrix.
  • a miniature light-emitting diode pixel unit is arranged in the area between the display sub-pixels.
  • FIG. 21 discloses a schematic structural diagram of the pixel unit 21 in an embodiment of the present application.
  • the pixel unit 21 may include a first subpixel 211 , a second subpixel 212 , a third subpixel 213 and a fourth subpixel 214 .
  • first sub-pixel 211 the second sub-pixel 212 , the third sub-pixel 213 and the fourth sub-pixel 214 .
  • FIG. 22 discloses a schematic structural diagram of the pixel unit 21 in an embodiment of the present application.
  • the fourth sub-pixel 214 may be omitted, and the first sub-pixel 211 , the second sub-pixel 212 and the third sub-pixel 213 are arranged in a 1 ⁇ 3 matrix.
  • the display screen assembly 600 may include a first transparent substrate 28 , a flexible substrate layer 29 , a buffer layer 30 , a first gate insulating layer 31 , a second gate insulating layer 32 , a planarization layer 33 , a pixel isolation layer 34 , and a cathode layer 35 , flexible packaging layer 36, touch panel layer 37, polarizing layer 38, optically transparent adhesive layer 39, display cover plate 10, polysilicon layer 40, gate layer 41, first source and drain layer 42, second source and drain layer layer 43 , anode layer 44 and organic light-emitting layer 45 .
  • the touch panel layer 37, the polarizing layer 38, the optically transparent adhesive layer 39, and the display screen cover 10 are stacked in sequence.
  • the first source and drain layers 42 are disposed between the second gate insulating layer 32 and the flat layer 33 so that a part of the second gate insulating layer 32 is in contact with the first source and drain layers 42 and a part is in contact with the flat layer 33 . So that a part of the flat layer 33 is in contact with the first source and drain layers 42 , and a part is in contact with the second gate insulating layer 32 .
  • the first source and drain layers 42 and the second source and drain layers 43 are respectively connected to the polysilicon layer 40 via vias.
  • the polysilicon layer 40 , the gate layer 41 , the first source and drain layers 42 and the second source and drain layers 43 form a gate driving circuit, and the gate driving circuit is formed in the auxiliary layer.
  • a data line circuit may also be provided in the auxiliary layer, and the gate driving circuit and the data line circuit may constitute a pixel driving circuit.
  • the anode layer 44 and the organic light-emitting layer 45 are stacked and disposed, and the anode layer 44 is disposed on the side of the flat layer 33 away from the flexible substrate layer 29 .
  • the touch panel layer 37 may be an on-cell touch layer.
  • a metal layer is arranged on the side of the touch panel layer 37 away from the flexible packaging layer 36 to form a driving circuit for driving the display of the pixel unit 21 .
  • the orthographic projection of the pixel unit 21 on the flat layer 33 is located on the portion of the upper surface of the flat layer 33 that is not covered by the anode layer 44 and the organic light-emitting layer 45 . That is, the orthographic projection of the pixel unit 21 on the flexible substrate layer 29 is within the orthographic projection of the portion not covered by the anode layer 44 and the organic light-emitting layer 45 on the upper surface of the flat layer 33 on the flexible substrate layer 29 .
  • the touch panel layer 37 can be used to replace the driving substrate 22 described in the above embodiments.
  • the black matrix 215 may be disposed on the touch panel layer 37 .
  • FIG. 25 discloses a schematic diagram of wiring and control of the micro LEDs in the pixel unit 21 according to an embodiment of the present application.
  • all the micro LEDs in the first micro LED pixel unit 26 (as the fingerprint unlocking light source) are connected in series, and the switch is controlled by the anode control line 46, and the brightness of the micro LED is controlled by the voltage setting on the anode control line 46.
  • All the infrared miniature LEDs (fingerprint unlocking light source) in the infrared miniature LED pixel unit 27 are connected in series, and the switch is controlled by the anode control line 48, and the brightness of the infrared miniature LED is controlled by the voltage setting on the anode control line 48.
  • the miniature LEDs in the first miniature LED pixel unit 26 and the infrared miniature LEDs in the infrared miniature LED pixel unit 27 are provided with a common cathode line 49 .
  • the scheme of combining the micro LED pixel unit and the display main pixel unit 24 for display is adopted, the first micro LED pixel unit 26 and the infrared micro LED pixel unit 27 are arranged in the fingerprint unlocking area 25, and the normal display outside the fingerprint unlocking area 25
  • the area is displayed by the display main pixel unit 24, with the advantages of micro LED inorganic ultra-high display life and brightness, to overcome the risk of fingerprint unlocking burn-in, and at the same time in the fingerprint unlock area 25, the first micro LED pixel unit 26 and infrared micro
  • the LED pixel unit 27 cooperates with the display to realize biological access and fingerprint sampling, which can solve the problem of horizontal stripes in optical fingerprint imaging, improve the false rejection rate, and significantly enhance the biological anti-counterfeiting function.

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Abstract

本申请提供了一种电子设备、显示模组及其修复方法，涉及显示技术领域。修复方法包括：提供设置有多个像素单元的驱动基板，每一所述像素单元包括三个第一微型发光二极管以及一个微型发光二极管晶粒；若所述像素单元中有不能正常工作的所述第一微型发光二极管，则将所述微型发光二极管晶粒进行色阻封装，以替代一个不能正常工作的所述第一微型发光二极管在所述像素单元中的发光功能。本申请提供的方法是在现有的像素结构中，使用一个微型发光二极管晶粒作为备用，使得达到对一个不能正常工作的第一微型发光二极管的替换作用，最终实现低成本、高效率的显示模组的巨量修复。

Description

电子设备、显示模组及其修复方法 【技术领域】
本申请涉及显示技术领域，具体涉及一种电子设备、显示模组及其修复方法。
【背景技术】
微型发光二极管晶粒是发展下一代显示技术和设备的核心器件，已经成为当前国际上半导体光电器件研发和产业化的重点。当前，不能正常工作的微型发光二极管晶粒修复技术需要将微型发光二极管晶粒取下，然后清理干净固定区域，重新选取合格微型发光二极管晶粒并固定。这种方式的修复时间耗时长，修复精度高，修复的过程中，尤其是将微型发光二极管晶粒取下过程，容易损伤驱动面板，导致修复失败。
【发明内容】
本申请实施方式一方面提供了一种显示模组的修复方法，包括：
提供设置有多个像素单元的驱动基板，每一所述像素单元包括三个第一微型发光二极管以及一个微型发光二极管晶粒；
若所述像素单元中有不能正常工作的所述第一微型发光二极管，则将所述微型发光二极管晶粒进行色阻封装，以替代一个不能正常工作的所述第一微型发光二极管在所述像素单元中的发光功能。
本申请实施方式又提供了一种显示模组，其特征在于，利用上述所述的方法制备而成，不存在不能正常工作的所述第一微型发光二极管的所述像素单元内的所述微型发光二极管晶粒不通电工作。
本申请实施方式进一步提供了一种显示模组，包括：
驱动基板；
像素单元层，与所述驱动基板层叠设置，所述像素单元层包括多个像素单元，每一所述多个像素单元包括三个第一微型发光二极管和一个第二微型发光二极管，所述第二微型发光二极管用于替代一个不能正常工作的所述第一微型发光二极管在所述像素单元中的发光功能；以及
透明基板，与所述像素单元层层叠设置，所述像素单元层位于所述驱动基板和所述透明基板之间。
本申请实施方式进一步提供了一种电子设备，其特征在于，包括显示屏组件及壳体组件，所述显示屏组件安装在所述壳体组件上，所述显示屏组件包括显示屏盖板及上述所述的显示模组，所述显示屏盖板盖设在所述显示模组远离所述壳体组件的一侧。
【附图说明】
为了更清楚地说明本申请实施方式中的技术方案，下面将对实施方式描述中所需要使用的附图作简单的介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1揭露了本申请一实施例中电子设备的结构示意图；
图2揭露了本申请一实施例中显示屏组件的结构示意图；
图3揭露了本申请一实施例中显示模组的部分结构示意图；
图4揭露了本申请一实施例中显示模组的部分结构示意图；
图5揭露了本申请一实施例中的修复方法流程图；
图6揭露了本申请一实施例中显示模组的结构示意图；
图7揭露了本申请一实施例中显示模组经过巨量转移操作后的结构示意图；
图8揭露了本申请一实施例中修复方法的部分流程图；
图9揭露了本申请一实施例中显示模组在修复过程中的结构示意图；
图10揭露了本申请一实施例中显示模组在修复过程中的结构示意图；
图11揭露了本申请一实施例中显示模组在修复过程中的结构示意图；
图12揭露了本申请一实施例中显示模组在修复过程中的结构示意图；
图13揭露了本申请一实施例中修复方法的结构示意图；
图14揭露了本申请一实施例中显示模组的部分结构示意图；
图15揭露了本申请一实施例中显示模组的部分结构示意图；
图16揭露了本申请一实施例中显示模组的结构示意图；
图17揭露了本申请一实施例中用于驱动两个B子像素的驱动电路图；
图18揭露了本申请一实施例中显示模组的部分结构示意图；
图19揭露了本申请一实施例中显示模组的部分结构示意图；
图20揭露了本申请一实施例中显示模组的部分结构示意图；
图21揭露了本申请一实施例中像素单元的结构示意图；
图22揭露了本申请一实施例中像素单元的结构示意图；
图23和图24分别揭露了本申请一实施例中显示屏组件的部分结构示意图；
图25揭露了本申请一实施例中像素单元中Micro LED的走线及控制示意图。
【具体实施方式】
下面结合附图和实施方式，对本申请做进一步的详细描述。特别指出的是，以下实施方式仅用于说明本申请，但不对本申请的范围进行限定。同样的，以下实施方式仅为本申请的部分实施方式而非全部实施方式，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。
在本文中提及“实施方式”意味着，结合实施方式描述的特定特征、结构或特性可以包含在本申请的至少一个实施方式中。在说明书中的各个位置出现该短语并不一定均是指相同的实施方式，也不是与其他实施方式互斥的独立的或备选的实施方式。本领域技术人员显式地和隐式地理解的是，本文所描述的实施方式可以与其他实施方式相结合。
作为在此使用的“电子设备”(也可被称为“终端”或“移动终端”或“电子装置”)包括，但不限于被设置成经由有线线路连接(如经由公共交换电话网络(PSTN)、数字用户线路(DSL)、数字电缆、直接电缆连接，以及/或另一数据连接/网络)和/或经由(例如，针对蜂窝网络、无线局域网(WLAN)、诸如DVB-H网络的数字电视网络、卫星网络、AM-FM广播发送器，以及/或另一通信终端的)无线接口接收/发送通信信号的装置。被设置成通过无线接口通信的通信终端可以被称为“无线通信终端”、“无线终端”或“移动终端”。移动终端的示例包括，但不限于卫星或蜂窝电话；可以组合蜂窝无线电电话与数据处理、传真以及数据通信能力的个人通信系统(PCS)终端；可以包括无线电电话、寻呼机、因特网/内联网接入、Web浏览器、记事簿、日历以及/或全球定位系统(GPS)接收器的PDA；以及常规膝上型和/或掌上型接收器或包括无线电电话收发器的其他电子装置。手机即为配置有蜂窝通信模块的电子设备。
请参阅图1，其揭露了本申请一实施例中电子设备的结构示意图。该电子设备100可包括壳体组件300和显示屏组件600。其中，壳体组件300用于承载显示屏组件600。当然，壳体组件300也可以用于承载电子设备100中的摄像头模组、电池、主板、处理器以及各种类型的传感器等电子元件。显示屏组件600用于显示信息。显示屏组件600安装在壳体组件300上。
在一实施例中，壳体组件300整体可为壳体状结构，内部可设置容纳空间以容纳摄像头 模组、电池、主板、处理器以及各种类型的传感器等电子元件。
在一实施例中，请参阅图2，其揭露了本申请一实施例中显示屏组件600的结构示意图。显示屏组件600可包括显示屏盖板10和显示模组20。具体地，显示屏盖板10与显示模组20层叠设置。显示模组20是显示屏组件600中用于显示画面的主要结构。显示模组20远离显示屏盖板10的一侧与壳体组件300连接。即，显示屏盖板10盖设在显示模组20远离壳体组件300的一侧。显示屏盖板10用于使显示模组20所显示图像的光线透过。使得用户可以透过显示屏盖板10观看显示模组20显示的图像。
在一实施例中，显示屏盖板10可以为玻璃或者树脂等透光材质，在此不做具体限定。显示屏盖板10用于保护显示模组20以及电子设备100内部的电子元器件。显示屏盖板10可使显示模组20不被损坏。用户可透过显示屏盖板10查看显示模组20显示的画面。在一实施例中，显示模组20可以为AMOLED(Active-matrix organic light emitting diode，有源矩阵有机发光二极体或主动矩阵有机发光二极体)显示模组，也可以为Micro LED(微型发光二极管)显示模组，甚至可以为LCD(Liquid Crystal Display)显示模组或QLED(量子点电致发光二极管，Quantum dots Light-emitting Diodes)显示模组。
接下来以显示模组20为Micro LED显示模组为例。请参阅图3，其揭露了本申请一实施例中显示模组20的部分结构示意图。显示模组20可包括呈矩阵排列的像素单元21。每个像素单元21可由多个子像素矩阵排列形成。
在一实施例中，每个像素单元21可包括四个子像素例如第一子像素211、第二子像素212、第三子像素213和第四子像素214。其中，第一子像素211、第二子像素212、第三子像素213和第四子像素214可呈2×2矩阵排列。
本申请中的术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括至少一个该特征。
在一实施例中，第一子像素211、第二子像素212、第三子像素213中三者之一可为R子像素(红色子像素)，另外两者之一可为G子像素(绿色子像素)，剩下的一个可为B子像素(蓝色子像素)，第四子像素214可以为R子像素、G子像素、B子像素、W子像素(白色子像素)中的一个。
在一实施例中，请参阅图3，在2×2矩阵排列中，第一子像素211与第二子像素212位于同一像素行，且与第三子像素213位于同一像素列。第四子像素214与第二子像素212位于同一像素列，且与第三子像素213位于同一像素行。
在一实施例中，请参阅图3和图4，图4揭露了本申请一实施例中显示模组20的部分结构示意图。第一子像素211可以为R子像素，第二子像素212可以为G子像素，第三子像素213可以为B子像素，第四子像素214可以为R子像素、G子像素、B子像素、W子像素中的一个。例如，第四子像素214可为W子像素。
微型发光二极管是发展下一代显示技术和设备的核心器件，微型发光二极管核心技术在显示领域的应用正面临重大突破。但其产业化仍然有许多问题例如：微缩化与阵列化，芯片巨量转移和色彩变换，检测和修复等亟待解决，其中巨量转移和修复技术是最先需要突破的关键技术。由于转移良率与微型发光二极管损坏数量的对应关系，所以提升巨量转移的良率之外，提升微型发光二极管损坏的修复能力，是提升良率的重中之重。
接下来阐述一种显示模组的修复方法，可用于修复上述所述显示模组20中损坏的子像素，其是通过利用第四子像素214来替代其他损坏的子像素(也可以说是不能正常工作的子像素)。例如，第一子像素211为损坏的子像素，那么就利用第四子像素214来代替第一子像素211。如果一个像素单元21中除第四子像素214外的其他子像素都不是损坏的子像素，即除第四子像素214外的其他子像素没有出现损坏或失效的。那么此像素单元21中第四子像素214可不发光，例如第四子像素214不通电工作，即第四子像素214熄灭，例如对第四子 像素214进行遮挡避光处理。
该修复方法无需设置冗余电路，可降低驱动电路面积，提升良率，提升显示像素密度；另外无需二次转移修复(De-bonding(将微型发光二极管晶粒从显示模组20上取下的工艺)工艺、清洗工艺、Bonding(将微型发光二极管晶粒固定在显示模组20上的工艺)工艺等)，简化了修复工艺，极大地提高了微型发光二极管的巨量修复效率，降低修复成本。请参阅图5，其揭露了本申请一实施例中的修复方法流程图。该方法可包括：
步骤S001：将多个待加工像素单元转移至驱动基板上。
请参阅图4和图6，图6揭露了本申请一实施例中显示模组20的结构示意图。显示模组20可包括像素单元21、驱动基板22和透明基板23。其中，像素单元21组成像素单元层。透明基板23、像素单元层和驱动基板22依次层叠设置。驱动基板22上设置了由驱动电路组成的驱动电路层221，驱动电路用于与像素单元21中的子像素例如第一子像素211、第二子像素212、第三子像素213和第四子像素214电性连接，以实现驱动子像素例如第一子像素211、第二子像素212、第三子像素213和第四子像素214显示的作用。驱动电路层221设置在驱动基板22朝向像素单元层的一侧。
在一实施例中，每一个子像素可包括第一微型发光二极管晶粒、微型发光二极管晶粒和彩膜色阻层(例如第一彩膜色阻层、第二彩膜色阻层)。第一微型发光二极管晶粒和微型发光二极管晶粒设置在驱动电路上。彩膜色阻层设置在第一微型发光二极管晶粒和微型发光二极管晶粒远离驱动电路层221的一侧，可用于分别对第一微型发光二极管晶粒和微型发光二极管晶粒封装形成微型发光二极管，能够使得第一微型发光二极管晶粒和微型发光二极管晶粒的色度均匀性较好。在一实施例中，彩膜色阻层可通过涂布厚度的精度来控制第一微型发光二极管晶粒和微型发光二极管晶粒的色度。可以理解地，彩膜色阻层例如第一彩膜色阻层可用于对第一微型发光二极管晶粒封装形成第一微型发光二极管。彩膜色阻层例如第二彩膜色阻层可用于对微型发光二极管晶粒封装形成第二微型发光二极管。
例如，第一子像素211可包括第一微型发光二极管晶粒2111和第一彩膜色阻层2112。第一微型发光二极管晶粒2111与驱动电路电性连接。第一彩膜色阻层2112设置在第一微型发光二极管晶粒2111远离驱动电路层221的一侧，用于改变第一微型发光二极管晶粒2111的色度。例如，第一子像素211为R子像素，第一微型发光二极管晶粒2111可以为发光颜色为红色的微型发光二极管晶粒、发光颜色为绿色的微型发光二极管晶粒、发光颜色为蓝色的微型发光二极管晶粒和发光颜色为白色的微型发光二极管晶粒中的任意一种，第一彩膜色阻层2112为红色彩膜色阻层，用于改变第一微型发光二极管晶粒2111的色度。当第一微型发光二极管晶粒2111为发光颜色为红色的微型发光二极管晶粒时，红色彩膜色阻层能够使得发光颜色为红色的微型发光二极管晶粒的色度均匀性更好。
例如，第二子像素212可包括第一微型发光二极管晶粒2121和第一彩膜色阻层2122。第一微型发光二极管晶粒2121与驱动电路电性连接。第一彩膜色阻层2122设置在第一微型发光二极管晶粒2121远离驱动电路层221的一侧，用于改变第一微型发光二极管晶粒2121的色度。例如，第二子像素212为G子像素，第一微型发光二极管晶粒2121可以为发光颜色为红色的微型发光二极管晶粒、发光颜色为绿色的微型发光二极管晶粒、发光颜色为蓝色的微型发光二极管晶粒和发光颜色为白色的微型发光二极管晶粒中的任意一种，第一彩膜色阻层2122为绿色彩膜色阻层，用于改变第一微型发光二极管晶粒2121的色度。当第一微型发光二极管晶粒2121为发光颜色为绿色的微型发光二极管晶粒时，绿色彩膜色阻层能够使得发光颜色为绿色的微型发光二极管晶粒的色度均匀性更好。
例如，第三子像素213可包括第一微型发光二极管晶粒2131和第一彩膜色阻层2132。第一微型发光二极管晶粒2131与驱动电路电性连接。第一彩膜色阻层2132设置在第一微型发光二极管晶粒2131远离驱动电路层221的一侧，用于改变第一微型发光二极管晶粒2131的色度。例如，第三子像素213为B子像素，第一微型发光二极管晶粒2131可以为发光颜色 为红色的微型发光二极管晶粒、发光颜色为绿色的微型发光二极管晶粒、发光颜色为蓝色的微型发光二极管晶粒和发光颜色为白色的微型发光二极管晶粒中的任意一种，第一彩膜色阻层2132为蓝色彩膜色阻层，用于改变第一微型发光二极管晶粒2131的色度。当第一微型发光二极管晶粒2131为发光颜色为蓝色的微型发光二极管晶粒时，蓝色彩膜色阻层能够使得发光颜色为蓝色的微型发光二极管晶粒的色度均匀性更好。
例如，第四子像素214可包括微型发光二极管晶粒2141和第二彩膜色阻层2142。微型发光二极管晶粒2141与驱动电路电性连接。第二彩膜色阻层2142设置在微型发光二极管晶粒2141远离驱动电路层221的一侧，用于改变微型发光二极管晶粒的色度。例如，第四子像素214为B子像素，微型发光二极管晶粒2141可以为发光颜色为红色的微型发光二极管晶粒、发光颜色为绿色的微型发光二极管晶粒、发光颜色为蓝色的微型发光二极管晶粒和发光颜色为白色的微型发光二极管晶粒中的任意一种，第二彩膜色阻层2142为蓝色彩膜色阻层，用于改变微型发光二极管晶粒2141的色度。在一实施例中，微型发光二极管晶粒2141的颜色和第二彩膜色阻层2142的颜色一致。在第一子像素211、第二子像素212和第三子像素213中任意一个出现损坏时，可以用第四子像素214替代。
可以理解地，子像素的颜色可由彩膜色阻层的颜色确定，也可以说是微型发光二极管可由彩膜色阻层的颜色确定。
在本实施例中，准备驱动基板22，可用于承载上述所述子像素，并制作成显示模组20。在一实施例中，驱动基板22可以为透明基板例如玻璃基板，也可以为聚酰亚胺薄膜，在本领域技术人员可以理解的范围内，驱动基板22也可以为其他材料，在此不做过做限定。
在此实施例中，可以按照图3、图4和图6所示的显示模组20，一个待加工像素单元可包括三个第一微型发光二极管晶粒及一个微型发光二极管晶粒。在一实施例中，请参阅图7，其揭露了本申请一实施例中显示模组20经过转移操作后的结构示意图。将巨量的微型发光二极管晶粒转移至驱动基板22上，以制作显示模组20。驱动基板22上设置有驱动电路，第一微型发光二极管晶粒2111、第一微型发光二极管晶粒2121、第一微型发光二极管晶粒2131和微型发光二极管晶粒2141分别与驱动基板22上的驱动电路电性连接。
在一实施例中，待加工像素单元转移的过程中可采用巨量转移法。
巨量转移法可以为静电力巨量转移法、凡德瓦力巨量转移法、磁力巨量转移法、选择性释放(Selective Release)巨量转移法、自组装(Self-Assembly)巨量转移法及转印(Roll Printing)巨量转移法，在此可不对巨量转移法做具体限定。其中：
静电力巨量转移法，采用具有双级结构的转移头，在转移过程中，分别施于正负电压，当从抓取微型发光二极管晶粒时，对一硅电极通正电，微型发光二极管晶粒就会吸附在转移头上，当需要把微型发光二极管晶粒放到驱动基板22既定位置时，对另外一个硅电极通负电，即可完成转移。
凡德瓦力巨量转移法，使用弹性印模，结合高精度运动控制打印头，利用凡德瓦力，通过改变打印头的速度，让微型发光二极管晶粒粘附在转移头上，或打印到驱动基板22预定位置上。
磁力巨量转移法，在切割之前，在微型发光二极管晶粒上混入诸如铁、钴、镍等磁性材料，利用电磁吸附和释放。
选择性释放巨量转移法，直接从原位置上将微型发光二极管晶粒进行转移，目前实现方式多的是图案化激光剥离(p-LLO)，即使用准分子激光，照射在生长界面上的氮化镓薄片上稀疏分离的模具大小区域，再通过紫外线曝光产生镓元素和氮气，做到平行转移至衬底，实现精准的光学阵列。
自组装巨量转移法，利用刷筒在衬底上滚动，使得微型发光二极管晶粒置于液体悬浮液中，通过流体力，让微型发光二极管晶粒落入驱动基板22上的对应井中。
转印巨量转移法，多是采用滚轴转印方式，例如卷对卷制程(Roll to Roll)转移技术，滚 动方法可通过机械变形同时转移和互联，可在生产线上控制微型发光二极管晶粒均匀性。
步骤S002：将三个第一微型发光二极管晶粒分别进行色阻封装，以形成三个第一微型发光二极管。
在一实施例中，请参阅图8，其揭露了本申请一实施例中修复方法的部分流程图。步骤S002可包括：
步骤S011：在驱动基板上布设黑色矩阵。
请参阅图6和图9，图9揭露了本申请一实施例中显示模组20在修复过程中的结构示意图。显示模组20可包括黑色矩阵215，黑色矩阵215设置在驱动基板22设置驱动电路的一侧。黑色矩阵215用于界定子像素。黑色矩阵215设有多个容置空间。黑色矩阵215与像素单元21可组成像素单元层。
步骤S012：将各第一微型发光二极管晶粒以及微型发光二极管晶粒一一对应地设置于各容置空间内。
请参阅图9，第一微型发光二极管晶粒2111、2121、2131以及微型发光二极管晶粒2141分别被黑色矩阵215隔离开来。可采用上述实施例中的转移方式将第一微型发光二极管晶粒以及微型发光二极管晶粒转移到各容置空间内。
步骤S013：将墨水填充于设置有第一微型发光二极管晶粒的容置空间内，以覆盖第一微型发光二极管晶粒。
请参阅图6和图10，图10揭露了本申请一实施例中显示模组20在修复过程中的结构示意图。在黑色矩阵215界定的子像素中，对容置空间进行第一彩膜色阻层的填充。在一实施例中，第一彩膜色阻层2112填充在第一微型发光二极管晶粒2111所在的容置空间内，并覆盖第一微型发光二极管晶粒2111。第一彩膜色阻层2122填充在第一微型发光二极管晶粒2121所在的容置空间内，并覆盖第一微型发光二极管晶粒2121。第一彩膜色阻层2132填充在第一微型发光二极管晶粒2131所在的容置空间内，并覆盖第一微型发光二极管晶粒2131。实现第一彩膜色阻层对第一微型发光二极管晶粒色度的调节。
在一实施例中，步骤S013中，可以将第一彩膜色阻层制备成墨水，采用喷墨打印工艺填充在第一微型发光二极管晶粒所在的容置空间内。
步骤S014：固化封装形成第一微型发光二极管。
请参阅图10，等待墨水对第一微型发光二极管晶粒2111、2121、2131固化封装，在一个像素单元21中并形成三个第一微型发光二极管。这一过程中，可以通过改变彩膜色阻层的涂布厚度、颜色等来精度控制微型发光二极管晶粒的色度。
在一实施例中，请参阅图10，第一微型发光二极管晶粒2111为发光颜色为红色的微型发光二极管晶粒，第一微型发光二极管晶粒2121为发光颜色为绿色的微型发光二极管晶粒，第一微型发光二极管晶粒2131为发光颜色为蓝色的微型发光二极管晶粒。相应地，填充在第一微型发光二极管晶粒2111所在的容置空间内的第一彩膜色阻层2112为红色彩膜色阻层，填充在第一微型发光二极管晶粒2121所在的容置空间内的第一彩膜色阻层2122为绿色彩膜色阻层，填充在第一微型发光二极管晶粒2131所在的容置空间内的第一彩膜色阻层2132为蓝色彩膜色阻层。进而使得三个第一微型发光二极管的发光颜色分别为红色、蓝色和绿色。
步骤S003：提供设置有多个像素单元的驱动基板。
在一实施例中，可提供经过步骤S014处理后的驱动基板。当然，也可以是经过步骤S012或S013处理后的驱动基板。请参阅图6和图10，一个像素单元21可包括第一微型发光二极管晶粒2111、2121、2131以及一个微型发光二极管晶粒2141。
步骤S004：检测各第一微型发光二极管是否能正常工作。
子像素的损坏多是由于微型发光二极管损坏导致不能正常工作。因此对微型发光二极管进行检测，有助于确保显示模组20的合格率，便于在检测到不能正常工作的微型发光二极管时，对不能正常工作微型发光二极管晶粒例如第一微型发光二极管晶粒2111、2121、2131、 微型发光二极管晶粒进行更换。
当然，检测过程可以在每一第一微型发光二极管晶粒进行封装形成一个第一微型发光二极管之前，也可以在每一第一微型发光二极管晶粒进行封装形成一个第一微型发光二极管之后，一般是在每一第一微型发光二极管晶粒进行封装形成一个第一微型发光二极管之前进行微型发光二极管晶粒检测，以避免存在一个像素单元21内存在2-4个不能正常工作的微型发光二极管晶粒。当然，这种情况的概率极低，在确保一个像素单元21内存在一个不能正常工作的微型发光二极管晶粒时，可以在每一第一微型发光二极管晶粒进行封装形成1个第一微型发光二极管之后进行。
步骤S005：若像素单元中有不能正常工作的第一微型发光二极管，则将微型发光二极管晶粒进行色阻封装，以替代一个不能正常工作的第一微型发光二极管在像素单元中的发光功能。
在步骤S005中确保一个像素单元21仅存在1个不能正常工作的微型发光二极管晶粒时，可以进行微型发光二极管晶粒2141封装，将不能正常工作的微型发光二极管晶粒进行替换。封装过程中，例如如图10所示，第一微型发光二极管晶粒2111不能正常工作，而第一子像素211为R子像素，那么就需要对微型发光二极管晶粒2141进行封装以形成R子像素，以替代第一子像素211。
通过预先设置微型发光二极管晶粒2141作为备用，使其达到对特定颜色子像素的修复，最终实现低成本、高效率的微型发光二极管晶粒的巨量修复。
在一实施例中，步骤S005可包括：将墨水填充于设置有微型发光二极管晶粒2141的容置空间内，以覆盖微型发光二极管晶粒2141，固化封装形成第二微型发光二极管。
请参阅图11，其揭露了本申请一实施例中显示模组20在修复过程中的结构示意图。其中，第二微型发光二极管的发光颜色与被替代的第一微型发光二极管原本的发光颜色相同，以使得第四子像素214可替代不能正常工作的子像素；设置有第二微型发光二极管的像素单元的色坐标与各第一微型发光二极管正常工作时像素单元的色坐标相同，以便于对不能正常工作的微型发光二极管晶粒进行寻址，进行不能正常工作的微型发光二极管晶粒的修复。
例如，在一个像素中，第一微型发光二极管晶粒2121为损坏的第一微型发光二极管晶粒，微型发光二极管晶粒2141与第一微型发光二极管晶粒2121在同一像素，所以微型发光二极管晶粒2141作为备用微型发光二极管晶粒，用于对损坏的第一微型发光二极管晶粒2121进行替代，将微型发光二极管晶粒2141进行色阻封装形成第二微型发光二极管，第二微型发光二极管的发光颜色与被替代的第一微型发光二极管原本的发光颜色相同。
在一实施例中，请参阅图11和图12，图12揭露了本申请一实施例中显示模组20在修复过程中的结构示意图。第二彩膜色阻层2142可以控制微型发光二极管晶粒2141的色度，例如微型发光二极管晶粒2141为发光颜色为白色的微型发光二极管晶粒，第二彩膜色阻层2142为绿色彩膜色阻层，第二微型发光二极管的发光颜色应该为绿色。例如微型发光二极管晶粒2141为发光颜色为红色的微型发光二极管晶粒，第二彩膜色阻层2142为蓝色彩膜色阻层，那么第二微型发光二极管的发光颜色应该为蓝色。
即，第二微型发光二极管的发光颜色由第二彩膜色阻层2142本身颜色决定。
在一实施例中，第二彩膜色阻层2142填充过程中，可将第二彩膜色阻层2142制备成墨水，采用喷墨打印工艺填充在微型发光二极管晶粒2141所在的容置空间内，等待墨水固化封装微型发光二极管晶粒2141。这一过程中，可以通过改变彩膜色阻层的涂布厚度、颜色等来精度控制微型发光二极管晶粒的色度。
在一实施例中，请参阅图13，其揭露了本申请一实施例中修复方法的结构示意图。在步骤S004之后，该方法还可包括：
步骤S021：在像素单元远离驱动基板一侧贴附透明基板。
请参阅图6，显示模组20还包括透明基板23，透明基板23设置在像素单元层远离驱动 基板22的一侧，与像素单元层层叠设置。具体可通过粘接的方式连接固定，例如两者直接粘结，也可以通过光学透明胶(OCA光学胶)粘接。通过透明基板23与黑色矩阵215完成对像素单元21的封装。在一实施例中，透明基板23可以为玻璃、塑料等透明材料。请一并参阅图2，显示屏盖板10盖设在显示模组20设置透明基板23的一侧。在一实施例中，显示屏盖板10与显示模组20可以通过光学透明胶(OCA光学胶)粘接。在一实施例中，透明基板23可以省略，显示屏盖板10替代透明基板23设置在像素单元层远离驱动基板22的一侧，即显示屏盖板10与像素单元层层叠设置。
可以理解地，经过上述修复方法制作的显示模组20可包括依次层叠设置的像素单元层、驱动基板22和透明基板23，其中像素单元层中的每个像素单元21设置有第一子像素211、第二子像素212、第三子像素213和第四子像素214。且像素单元层中存在拥有损坏的子像素的像素单元21，存在损坏的子像素的像素单元21中的第四子像素214替代损坏的子像素。第四子像素214可通过微型发光二极管晶粒2141和第二彩膜色阻层2142的配合，使得第二微型发光二极管的发光颜色与不能正常工作的第一微型发光二极管的发光颜色相同。
在Micro LED显示模组发出的可见光中，波长最短、能量最强的是蓝光(380～500nm)，蓝光作为能量最强的可见光，包括蓝、靛、紫光，它们穿透角膜与水晶体直射入黄斑部，加速黄斑部细胞氧化，令视网膜感光细胞受损。为了过滤蓝光保护眼睛，利用微型发光二极管晶粒来辅助B子像素，使得Micro LED显示模组分场景使用，在保证蓝光LED发光效率和功耗的前提下，兼顾低蓝光护眼的需求。请参阅图14，其揭露了本申请一实施例中显示模组20的部分结构示意图。显示模组20可包括呈矩阵排列的像素单元21。每个像素单元21可由多个子像素矩阵排列形成。
在一实施例中，每个像素单元21可包括四个子像素例如第一子像素211、第二子像素212、第三子像素213和第四子像素214。其中，第一子像素211、第二子像素212、第三子像素213和第四子像素214可呈2×2矩阵排列。
在一实施例中，第一子像素211、第二子像素212、第三子像素213中三者之一可为R子像素，另外两者之一可为G子像素，剩下的一个可为B子像素，第四子像素214可以为B子像素。在一实施例中，第四子像素214的有害蓝光发射量低于作为另一个B子像素的子像素的有害蓝光发射量。在一实施例中，可通过调节发光效率来实现调低蓝光发射量，例如第四子像素214的发光效率较作为另一个B子像素的子像素的发光效率低。
在一实施例中，请参阅图14，在2×2矩阵排列中，第一子像素211与第四子像素214位于同一像素行，且与第三子像素213位于同一像素列。第二子像素212与第四子像素214位于同一像素列，且与第三子像素213位于同一像素行。
在一实施例中，请参阅图14和图15，图15揭露了本申请一实施例中显示模组20的部分结构示意图。第一子像素211可以为R子像素，第二子像素212可以为G子像素，第三子像素213可以为B子像素，第四子像素214可以为B子像素。在一实施例中，第四子像素214的有害蓝光发射量低于第三子像素213的有害蓝光发射量。在一实施例中，第四子像素214的发光效率较第三子像素213的发光效率低。可以在显示模组20正常工作(即显示消息)时，第三子像素213作为B子像素进行正常显示，第四子像素214可不显示，当然第四子像素214也可以显示，在此不做具体限定。在一些护眼使用场景，比如电子书阅读，深夜使用手机，新闻阅读等场景时，第四子像素214作为B子像素进行正常显示(即发光)，第三子像素213作为B子像素则不显示(即，熄灭)。通过在护眼使用场景降低B子像素的有害蓝光发射量，实现护眼的效果。
请参阅图16，其揭露了本申请一实施例中显示模组20的结构示意图。显示模组20可包括像素单元21、驱动基板22和透明基板23。其中，透明基板23、包括像素单元21的像素单元层和驱动基板22依次层叠设置。驱动基板22上设置了由驱动电路组成的驱动电路层221，驱动电路用于与像素单元21中的子像素例如第一子像素211、第二子像素212、第三子 像素213和第四子像素214电性连接，以实现驱动子像素例如第一子像素211、第二子像素212、第三子像素213和第四子像素214显示的作用。驱动电路层221设置在驱动基板22朝向像素单元层的一侧。
在一实施例中，每一个子像素可包括第一微型发光二极管晶粒、微型发光二极管晶粒和彩膜色阻层(例如第一彩膜色阻层、第二彩膜色阻层)。第一微型发光二极管晶粒和微型发光二极管晶粒设置在驱动电路上。彩膜色阻层设置在第一微型发光二极管晶粒和微型发光二极管晶粒远离驱动电路层221的一侧，用于控制第一微型发光二极管晶粒和微型发光二极管晶粒的色度，能够使得第一微型发光二极管晶粒和微型发光二极管晶粒的色度均匀性较好。在一实施例中，彩膜色阻层可通过涂布厚度的精度来控制第一微型发光二极管晶粒和微型发光二极管晶粒的色度。
例如，第一子像素211可包括第一微型发光二极管晶粒2111和第一彩膜色阻层2112。第一微型发光二极管晶粒2111与驱动电路电性连接。第一彩膜色阻层2112设置在第一微型发光二极管晶粒2111远离驱动电路层221的一侧，用于改变第一微型发光二极管晶粒2111的色度。例如，第一子像素211为R子像素，第一微型发光二极管晶粒2111可以为发光颜色为红色的微型发光二极管晶粒、发光颜色为绿色的微型发光二极管晶粒、发光颜色为蓝色的微型发光二极管晶粒和发光颜色为白色的微型发光二极管晶粒中的任意一种，第一彩膜色阻层2112为红色彩膜色阻层，用于改变第一微型发光二极管晶粒2111的色度。当第一微型发光二极管晶粒2111为发光颜色为红色的微型发光二极管晶粒时，红色彩膜色阻层能够使得发光颜色为红色的微型发光二极管晶粒的色度均匀性更好。
例如，第二子像素212可包括第一微型发光二极管晶粒2121和第一彩膜色阻层2122。第一微型发光二极管晶粒2121与驱动电路电性连接。第一彩膜色阻层2122设置在第一微型发光二极管晶粒2121远离驱动电路层221的一侧，用于改变第一微型发光二极管晶粒2121的色度。例如，第二子像素212为G子像素，第一微型发光二极管晶粒2121可以为发光颜色为红色的微型发光二极管晶粒、发光颜色为绿色的微型发光二极管晶粒、发光颜色为蓝色的微型发光二极管晶粒和发光颜色为白色的微型发光二极管晶粒中的任意一种，第一彩膜色阻层2122为绿色彩膜色阻层，用于改变第一微型发光二极管晶粒2121的色度。当第一微型发光二极管晶粒2121为发光颜色为绿色的微型发光二极管晶粒时，绿色彩膜色阻层能够使得发光颜色为绿色的微型发光二极管晶粒的色度均匀性更好。
例如，第三子像素213可包括第一微型发光二极管晶粒2131和第一彩膜色阻层2132。第一微型发光二极管晶粒2131与驱动电路电性连接。第一彩膜色阻层2132设置在第一微型发光二极管晶粒2131远离驱动电路层221的一侧，用于改变第一微型发光二极管晶粒2131的色度。例如，第三子像素213为B子像素，第一微型发光二极管晶粒2131可以为发光颜色为红色的微型发光二极管晶粒、发光颜色为绿色的微型发光二极管晶粒、发光颜色为蓝色的微型发光二极管晶粒和发光颜色为白色的微型发光二极管晶粒中的任意一种，第一彩膜色阻层2132为蓝色彩膜色阻层，用于改变第一微型发光二极管晶粒2131的色度。当第一微型发光二极管晶粒2131为发光颜色为蓝色的微型发光二极管晶粒时，蓝色彩膜色阻层能够使得发光颜色为蓝色的微型发光二极管晶粒的色度均匀性更好。
例如，第四子像素214可包括微型发光二极管晶粒2141和第二彩膜色阻层2142。微型发光二极管晶粒2141与驱动电路电性连接。第二彩膜色阻层2142设置在微型发光二极管晶粒2141远离驱动电路层221的一侧，用于改变微型发光二极管晶粒2141的色度。第四子像素214为B子像素，微型发光二极管晶粒2141可以为发光颜色为红色的微型发光二极管晶粒、发光颜色为绿色的微型发光二极管晶粒、发光颜色为蓝色的微型发光二极管晶粒和发光颜色为白色的微型发光二极管晶粒中的任意一种，第二彩膜色阻层2142为蓝色彩膜色阻层，用于改变微型发光二极管晶粒2141的色度。在一实施例中，微型发光二极管晶粒2141可以为发光颜色为蓝色的微型发光二极管晶粒，第二彩膜色阻层2142为蓝色彩膜色阻层。
请参阅图16，显示模组20可包括黑色矩阵215，黑色矩阵215设置在驱动基板22设置驱动电路的一侧。黑色矩阵215用于界定子像素，黑色矩阵215设有多个容置空间。黑色矩阵215与像素单元21可组成像素单元层。各第一微型发光二极管晶粒2111、2121、2131以及微型发光二极管晶粒2141一一对应地设置于各容置空间内。黑色矩阵215作为像素单元层的一部分。第一彩膜色阻层2112填充在第一微型发光二极管晶粒2111所在的容置空间内，并覆盖第一微型发光二极管晶粒2111。第一彩膜色阻层2122填充在第一微型发光二极管晶粒2121所在的容置空间内，并覆盖第一微型发光二极管晶粒2121。第一彩膜色阻层2132填充在第一微型发光二极管晶粒2131所在的容置空间内，并覆盖第一微型发光二极管晶粒2131。实现第一彩膜色阻层对第一微型发光二极管晶粒色度的调节。
在一实施例中，请参阅图15，第一微型发光二极管晶粒2111为发光颜色为红色的微型发光二极管晶粒，第一微型发光二极管晶粒2121为发光颜色为绿色的微型发光二极管晶粒，第一微型发光二极管晶粒2131为发光颜色为蓝色的微型发光二极管晶粒。相应地，填充在第一微型发光二极管晶粒2111所在的容置空间内的第一彩膜色阻层2112为红色彩膜色阻层，填充在第一微型发光二极管晶粒2121所在的容置空间内的第一彩膜色阻层2122为绿色彩膜色阻层，填充在第一微型发光二极管晶粒2131所在的容置空间内的第一彩膜色阻层2132为蓝色彩膜色阻层。
在一实施例中，请参阅图15，第二彩膜色阻层2142可以控制微型发光二极管晶粒2141的色度，例如微型发光二极管晶粒2141为发光颜色为白色的微型发光二极管晶粒，第二彩膜色阻层2142为蓝色彩膜色阻层，那么微型发光二极管的发光颜色应该为蓝色。例如微型发光二极管晶粒2141为发光颜色为红色的微型发光二极管晶粒，第二彩膜色阻层2142为蓝色彩膜色阻层，那么微型发光二极管的发光颜色应该为蓝色。
在一实施例中，请参阅图16，显示模组20还包括透明基板23，透明基板23设置在像素单元层远离驱动基板22的一侧，与像素单元层层叠设置。具体可通过粘接的方式连接固定，例如两者直接粘结，也可以通过光学透明胶(OCA光学胶)粘接。通过透明基板23与黑色矩阵215完成对像素单元21的封装。在一实施例中透明基板23可以为玻璃、塑料等透明材料。请一并参阅图2，显示屏盖板10盖设在显示模组20设置透明基板23的一侧。在一实施例中，显示屏盖板10与显示模组20可以通过光学透明胶粘接。在一实施例中，透明基板23可以省略，显示屏盖板10替代透明基板23设置在像素单元层远离驱动基板22的一侧，即显示屏盖板10与像素单元层层叠设置。
在一实施例中，每一个微型发光二极管晶粒都采用设置在驱动基板22的像素驱动模块(驱动电路的一部分)进行驱动，使得每一个微型发光二极管晶粒进行显示。由于存在两个B子像素，所以需要对两个B子像素进行共同驱动。请参阅图17，其揭露了本申请一实施例中用于驱动两个B子像素的驱动电路图。其中，在同一个像素单元21中，像素驱动模块2211的同一输出端分别连接第一开关控制模块(Switch1)2212和第二开关控制模块(Switch2)2213，第一开关控制模块(Switch1)2212与第一微型发光二极管晶粒2131电性连接，以便第一开关控制模块(Switch1)2212控制第一微型发光二极管晶粒2131的熄灭或发光，第二开关控制模块(Switch2)2213与微型发光二极管晶粒2141电性连接，以便第二开关控制模块(Switch2)2213控制微型发光二极管晶粒2141熄灭或发光。第一开关控制模块(Switch1)2212和第二开关控制模块(Switch2)2213分别被一条数据信号控制。即第一微型发光二极管晶粒2131和微型发光二极管晶粒2141分属于两行，第一开关控制模块(Switch1)2212被第一开关控制数据信号Switch1控制，第二开关控制模块(Switch2)2213被第二开关控制数据信号Switch2控制。第一开关控制模块(Switch1)2212用于控制第一微型发光二极管晶粒2131进行发光或熄灭，第二开关控制模块(Switch2)2213用于控制微型发光二极管晶粒2141进行发光或熄灭。在一实施例中，用于驱动R子像素的像素驱动模块可直接输出端与第一微型发光二极管晶粒2111电性连接。在一实施例中，用于驱动G子像素的像素驱动模块可直 接输出端与第一微型发光二极管晶粒2121电性连接。
像素驱动模块2211可包括第一晶体管T1、第二晶体管T2、第三晶体管T3、第四晶体管T4、第五晶体管T5、第六晶体管T6、第七晶体管T7和电容器C1。
第一晶体管T1的栅电极用于第一接收扫描信号SCAN1，且其第一端用于接收参考电压Vref，且其第二端电性连接到电容器C1的第一端及第三晶体管T3的栅极、第五晶体管T5的第一端。
第二晶体管T2的栅电极用于接收使能信号EMIT，且其第一端用于接收电源正极电压ELVDD，且其第二端电性连接到第三晶体管T3的第一端、第四晶体管T4的第一端。
第三晶体管T3的第二端电性连接于第五晶体管T5的第二端、第六晶体管T6的第一端。
第四晶体管T4的栅电极用于接收第二扫描信号SCAN2，且其第二端用于接收数据电压Vdata。
第五晶体管T5的栅电极用于接收第二扫描信号SCAN2。
第六晶体管T6的栅电极用于接收使能信号EMIT，且其第二端分别连接到第一开关控制模块(Switch1)2212和第二开关控制模块(Switch2)2213、第七晶体管T7的第一端。
第七晶体管T7的栅电极用于接收第一扫描信号SCAN1，且其第二端用于接收参考电压Vref。
第一开关控制模块(Switch1)2212可包括第八晶体管T8，第八晶体管T8的栅电极用于接收第一开关控制数据信号Swich1，其第一端电性连接于第六晶体管T6的第二端，其第二端电性连接于第一微型发光二极管晶粒2131的阳极。
第二开关控制模块(Switch2)2213可包括第九晶体管T9，第九晶体管T9的栅电极用于接收第二开关控制数据信号Swich2，其第一端电性连接于第六晶体管T6的第二端，其第二端电性连接于微型发光二极管晶粒2141的阳极。
第一微型发光二极管晶粒2131的阴极和微型发光二极管晶粒2141的阴极均连接于电源负极电压ELVSS。
当在显示模组20进行微型发光二极管晶粒巨量转移时，没有B子像素损伤时，在护眼场景下，所有微型发光二极管晶粒2141送黑，即显示灰阶0，这个是可以单个微型发光二极管晶粒2141独立控制的；反之，正常场景使用时，所有第一微型发光二极管晶粒2131送黑。
然而，一旦检测出在巨量转移中，在一个像素单元21中第一微型发光二极管晶粒2131或微型发光二极管晶粒2141受损。无论在护眼模式还是正常模式，仅存在唯一的蓝色子像素。第一微型发光二极管晶粒2131和微型发光二极管晶粒2141都会被送对应的显示信号，使其亮起(因为有一个蓝色子像素已经损伤了，所以实际只会亮一个蓝色子像素)，也就使得，在巨量转移过程中，即使第一微型发光二极管晶粒2131损坏，也会有微型发光二极管晶粒2141作为备用进行不能正常工作的第一微型发光二极管晶粒2131的修复，即该实施例中的显示模组20也可以提升微型发光二极管晶粒的巨量转移的良率。
接下来以显示模组20为AMOLED显示模组为例。电子设备100中的多种类型的传感器可包括互补金属氧化物半导体传感器(CMOS Sensor)，即成像感光单元。CMOS Sensor可用于作为屏下指纹识别的主要元件，在用户手指触摸显示模组20，显示模组20发光作为光源，光源经过手指的反射(指纹脊和指纹谷对光的反射的不同)，反射光通过透镜到CMOS Sensor中成像，用指纹成像的信息来进行指纹识别。AMOLED显示模组的亮度是有局限性地，近而直接影响指纹解锁的速度和解锁成功率。此实施例通过在AMOLED显示模组中采用上述实施例中所述的像素单元21(也可被称为微型发光二极管像素单元)，以改善指纹解锁的速度和解锁成功率。
可以理解地，当显示模组20为LCD(Liquid Crystal Display)显示模组或QLED(量子点电致发光二极管，Quantum dots Light-emitting Diodes)显示模组等可附加指纹识别能力的显示模组也可以采用上述实施例中所述的像素单元21(也可被称为微型发光二极管像素单元)。 当然光学指纹识别传感器也可以根据实际情况设置在显示模组20内部。
请参阅图18，其揭露了本申请一实施例中显示模组20的部分结构示意图。显示模组20可包括呈矩阵排列的显示主像素单元24。每个显示主像素单元24可由多个子像素(也可被称为“显示子像素”)矩阵排列形成。
在一实施例中，每个显示主像素单元24可包括四个子像素例如第一显示子像素241、第二显示子像素242、第三显示子像素243和第四显示子像素244。其中，第一显示子像素241、第二显示子像素242、第三显示子像素243和第四显示子像素244可呈2×2矩阵排列。在一实施例中，请参阅图19，其揭露了本申请一实施例中显示模组20的部分结构示意图。第四显示子像素244可以省略，第一显示子像素241、第二显示子像素242、第三显示子像素243可呈1×3矩阵排列。
在一实施例中，请参阅图18，第一显示子像素241、第二显示子像素242、第三显示子像素243中三者之一可为R子像素，另外两者之一可为G子像素，剩下的一个可为B子像素，第四显示子像素244可以为R子像素、G子像素、B子像素、W子像素中的一个。
在一实施例中，请参阅图18，在2×2矩阵排列中，第一显示子像素241与第四显示子像素244位于同一像素行，且与第二显示子像素242位于同一像素列。第三显示子像素243与第四显示子像素244位于同一像素列，且与第三显示子像素243位于同一像素行。
在一实施例中，请参阅图18和图20，图20揭露了本申请一实施例中显示模组20的部分结构示意图。第一显示子像素241可以为R子像素，第二显示子像素242可以为G子像素，第三显示子像素243可以为B子像素，第四显示子像素244可以为R子像素、G子像素、B子像素、W子像素中的一个。例如，第四显示子像素244可为G子像素。
为了实现采用微型发光二极管发光作为光学指纹解锁的面光源，减少曝光时间。在指纹解锁区的任意四个相邻且呈2×2矩阵排列的显示子像素之间的区域设置一个微型发光二极管像素单元。请参阅图18、图19和图20，在显示模组20内设置了指纹解锁区25，在指纹解锁区25内，任意四个相邻的显示子像素之间的区域设置一个微型发光二极管像素单元(即上述实施例中的像素单元21)。在一实施例中，像素单元21可包括第一微型发光二极管像素单元26和红外微型发光二极管像素单元27。第一微型发光二极管像素单元26和红外微型发光二极管像素单元27间隔设置。在一实施例中，第一微型发光二极管像素单元26和红外微型发光二极管像素单元27可省略其中一个。
在一实施例中，第一微型发光二极管像素单元26用于指纹解锁光源使用，红外微型发光二极管像素单元27用于生物防伪使用。具体使用时，在每次指纹采样中，会预留间隔时间，红外微型发光二极管像素单元27亮起，完成红外光源下的指纹成像，用于生物防伪，在间隔时间例如1～2帧的时间后，第一微型发光二极管像素单元26亮起作为指纹解锁光源使用。
可以理解地，显示子像素之间设置的微型发光二极管像素单元是均布排列设置的，当然也可以是矩阵排列在显示子像素中，但不仅限于任意四个相邻且呈2×2矩阵排列的显示子像素之间的区域设置一个微型发光二极管像素单元。
请参阅图21，其揭露了本申请一实施例中像素单元21的结构示意图。像素单元21可包括第一子像素211、第二子像素212、第三子像素213和第四子像素214。具体地，对于第一子像素211、第二子像素212、第三子像素213和第四子像素214的详细介绍，可参阅上述实施例，在此不做过多赘述。在一实施例中，请参阅图22，其揭露了本申请一实施例中像素单元21的结构示意图。第四子像素214可以省略，第一子像素211、第二子像素212和第三子像素213采用1×3矩阵排列。
请参阅图23和图24，其分别揭露了本申请一实施例中显示屏组件600的部分结构示意图。该显示屏组件600可包括第一透明基板28、柔性基板层29、缓冲层30、第一栅极绝缘层31、第二栅极绝缘层32、平坦层33、像素隔离层34、阴极层35、柔性封装层36、触控面板层37、偏光层38、光学透明胶层39、显示屏盖板10、多晶硅层40、栅极层41、第一源漏 极层42、第二源漏极层43、阳极层44及有机发光层45。
具体地，第一透明基板28、柔性基板层29、缓冲层30、第一栅极绝缘层31、第二栅极绝缘层32、平坦层33、像素隔离层34、阴极层35、柔性封装层36、触控面板层37、偏光层38、光学透明胶层39、显示屏盖板10依次层叠设置。
多晶硅层40设置在缓冲层30和第一栅极绝缘层31之间，以使得缓冲层30的一部分与多晶硅层40接触，一部分与第一栅极绝缘层31接触。以使得第一栅极绝缘层31的一部分与多晶硅层40接触，一部分与缓冲层30接触。
栅极层41设置在第一栅极绝缘层31和第二栅极绝缘层32之间，以使得第一栅极绝缘层31的一部分与栅极层41接触，一部分与第二栅极绝缘层32接触。以使得第二栅极绝缘层32的一部分与栅极层41接触，一部分与第一栅极绝缘层31接触。栅极层41在柔性基板层29上的正投影区域，被包含在多晶硅层40在柔性基板层29上的正投影区域内。
第一源漏极层42设置在第二栅极绝缘层32和平坦层33之间，以使得第二栅极绝缘层32的一部分与第一源漏极层42接触，一部分与平坦层33接触。以使得平坦层33的一部分与第一源漏极层42接触，一部分与第二栅极绝缘层32接触。
第二源漏极层43设置在第二栅极绝缘层32和平坦层33之间，以使得第二栅极绝缘层32的一部分与第二源漏极层43接触，一部分与平坦层33接触。以使得平坦层33的一部分与第二源漏极层43接触，一部分与第二栅极绝缘层32接触。
第一源漏极层42和第二源漏极层43分别与多晶硅层40过孔连接。
在一实施例中，第一透明基板28、柔性基板层29、缓冲层30、第一栅极绝缘层31、第二栅极绝缘层32、第二栅极绝缘层32、平坦层33组成辅助层。像素隔离层34、阴极层35、阳极层44、有机发光层45组成显示层。柔性封装层36用于对显示层进行封装。有机发光层45作为显示主像素单元24的子像素的一部分。多晶硅层40、栅极层41、第一源漏极层42和第二源漏极层43组成栅极驱动电路，栅极驱动电路形成于辅助层内。当然可以理解的，辅助层内也可设置有数据线电路，而栅极驱动电路与数据线电路可组成像素驱动电路。
在一实施例中，阳极层44和有机发光层45层叠设置，阳极层44设置在平坦层33远离柔性基板层29的一侧。
像素隔离层34覆盖在阳极层44、有机发光层45以及平坦层33上表面中未被阳极层44、有机发光层45覆盖的部位之上。且像素隔离层34与阳极层44接触的部位，部分形成通孔。有机发光层45位于像素隔离层34上，并部分穿过像素隔离层34的通孔与阳极层44连接。像素隔离层34以及有机发光层45上设置有阴极层35，有机发光层45与阴极层35过孔连接。
触控面板层37可为On-cell触控层。触控面板层37远离柔性封装层36一侧上布设金属层以制作驱动像素单元21显示的驱动电路。像素单元21在平坦层33上的正投影位于平坦层33上表面中未被阳极层44、有机发光层45覆盖的部位之上。即像素单元21在柔性基板层29上的正投影位于平坦层33上表面中未被阳极层44、有机发光层45覆盖的部位在柔性基板层29上的正投影之内。可以理解地，触控面板层37可用于替代上述实施例中所述的驱动基板22。黑色矩阵215可设置在触控面板层37上。
请参阅图25，其揭露了本申请一实施例中像素单元21中微型发光二极管的走线及控制示意图。其中，所有第一微型发光二极管像素单元26中的微型发光二极管(作为指纹解锁光源)串联，由阳极控制线46控制开关，通过阳极控制线46上的电压设置，来控制微型发光二极管发光亮度。所有红外微型发光二极管像素单元27中的红外微型发光二极管(指纹解锁光源)串联，由阳极控制线48控制开关，通过阳极控制线48上的电压设置，来控制红外微型发光二极管发光亮度。第一微型发光二极管像素单元26中的微型发光二极管和红外微型发光二极管像素单元27中的红外微型发光二极管共阴极走线49设置。
采用微型发光二极管像素单元和显示主像素单元24组合显示的方案，在指纹解锁区25内设置第一微型发光二极管像素单元26和红外微型发光二极管像素单元27，在指纹解锁区 25外的正常显示区域采用显示主像素单元24显示，以微型发光二极管无机超高显示寿命和亮度的优点，来克服指纹解锁烧屏的风险，同时在指纹解锁区25，第一微型发光二极管像素单元26和红外微型发光二极管像素单元27配合显示，实现了生物访问以及指纹采样，可解决光学指纹成像中的横纹问题，提升错误拒绝率，同时显著增强生物防伪功能。
以上所述仅为本申请的实施例，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所做的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (20)

  1. 一种显示模组的修复方法，其特征在于，包括：
    提供设置有多个像素单元的驱动基板，每一所述像素单元包括三个第一微型发光二极管以及一个微型发光二极管晶粒；
    若所述像素单元中有不能正常工作的所述第一微型发光二极管，则将所述微型发光二极管晶粒进行色阻封装，以替代一个不能正常工作的所述第一微型发光二极管在所述像素单元中的发光功能。
  2. 根据权利要求1所述的方法，其特征在于，在所述若所述像素单元中有不能正常工作的所述第一微型发光二极管，则将所述微型发光二极管晶粒进行色阻封装，以替代一个不能正常工作的所述第一微型发光二极管在所述像素单元中的发光功能之前，所述方法还包括：
    检测各所述第一微型发光二极管是否能正常工作。
  3. 根据权利要求1或2所述的方法，其特征在于，所述将所述微型发光二极管晶粒进行色阻封装，以替代一个不能正常工作的所述第一微型发光二极管在所述像素单元中的发光功能，包括：
    将所述微型发光二极管晶粒进行色阻封装形成第二微型发光二极管，所述第二微型发光二极管的发光颜色与被替代的所述第一微型发光二极管原本的发光颜色相同。
  4. 根据权利要求3所述的方法，其特征在于，对于同一所述像素单元，设置有所述第二微型发光二极管的所述像素单元的色坐标与各所述第一微型发光二极管正常工作时所述像素单元的色坐标相同。
  5. 根据权利要求1或2所述的方法，其特征在于，三个所述第一微型发光二极管的发光颜色分别为红色、蓝色和绿色。
  6. 根据权利要求1或2所述的方法，其特征在于，在所述提供设置有多个像素单元的驱动基板之前，所述方法还包括：
    将多个待加工像素单元转移至所述驱动基板上，每一所述待加工像素单元包括三个第一微型发光二极管晶粒及一个所述微型发光二极管晶粒；
    将三个所述第一微型发光二极管晶粒分别进行色阻封装，以形成三个所述第一微型发光二极管。
  7. 根据权利要求6所述的方法，其特征在于，所述将三个所述第一微型发光二极管晶粒分别进行色阻封装，以形成三个所述第一微型发光二极管，包括：
    在所述驱动基板上布设黑色矩阵，所述黑色矩阵设有多个容置空间；
    将各所述第一微型发光二极管晶粒以及所述微型发光二极管晶粒一一对应地设置于各所述容置空间内。
  8. 根据权利要求7所述的方法，其特征在于，所述将三个所述第一微型发光二极管晶粒分别进行色阻封装，以形成三个所述第一微型发光二极管，还包括：
    将墨水填充于设置有所述第一微型发光二极管晶粒的所述容置空间内，以覆盖所述第一微型发光二极管晶粒；
    固化封装形成所述第一微型发光二极管。
  9. 根据权利要求7或8所述的方法，其特征在于，所述将所述微型发光二极管晶粒进行色阻封装，以替代一个不能正常工作的所述第一微型发光二极管在所述像素单元中的发光功能，包括：
    将墨水填充于设置有所述微型发光二极管晶粒的所述容置空间内，以覆盖所述微型发光二极管晶粒；
    固化封装。
  10. 根据权利要求9所述的方法，其特征在于，所述墨水由彩膜色阻制作而成，所述彩膜色阻的颜色为红色、绿色、蓝色中的任一种。
  11. 一种显示模组，其特征在于，利用权利要求1-10任一项所述的方法制备而成，在同一所述像素单元内，所述微型发光二极管晶粒用于在各所述第一微型发光二极管均能正常发光时不通电工作。
  12. 一种显示模组，其特征在于，包括：
    驱动基板；
    像素单元层，与所述驱动基板层叠设置，所述像素单元层包括多个像素单元，每一所述多个像素单元包括三个第一微型发光二极管和一个第二微型发光二极管，所述第二微型发光二极管用于替代一个不能正常工作的所述第一微型发光二极管在所述像素单元中的发光功能；以及
    透明基板，与所述像素单元层层叠设置，所述像素单元层位于所述驱动基板和所述透明基板之间。
  13. 根据权利要求12所述的显示模组，其特征在于，对于同一所述像素单元，设置有所述第二微型发光二极管的所述像素单元的色坐标与各所述第一微型发光二极管正常工作时所述像素单元的色坐标相同。
  14. 根据权利要求12所述的显示模组，其特征在于，所述像素单元层还包括黑色矩阵，所述黑色矩阵设置在所述驱动基板上，所述黑色矩阵设有多个容置空间，每一所述三个第一微型发光二极管包括第一微型发光二极管晶粒，所述第二微型发光二极管包括微型发光二极管晶粒，各所述第一微型发光二极管晶粒以及所述微型发光二极管晶粒一一对应地设置于各所述容置空间内。
  15. 根据权利要求14所述的显示模组，其特征在于，每一所述三个第一微型发光二极管还包括第一彩膜色阻层，所述第一彩膜色阻层设置在所述容置空间内，所述第一彩膜色阻层配置为覆盖在所述第一微型发光二极管晶粒上。
  16. 根据权利要求12-15任一项所述的显示模组，其特征在于，三个所述第一微型发光二极管的发光颜色分别为红色、蓝色和绿色。
  17. 根据权利要求15所述的显示模组，其特征在于，所述第二微型发光二极管还包括第二彩膜色阻层，所述第二彩膜色阻层设置在所述容置空间内，所述第二彩膜色阻层配置为覆盖在所述微型发光二极管晶粒上。
  18. 根据权利要求12-15任一项所述的显示模组，其特征在于，在同一所述像素单元内，所述第二微型发光二极管用于在各所述第一微型发光二极管均能正常发光时不通电工作。
  19. 一种电子设备，其特征在于，包括显示屏组件及壳体组件，所述显示屏组件安装在所述壳体组件上，所述显示屏组件包括显示屏盖板及显示模组，所述显示屏盖板盖设在所述显示模组远离所述壳体组件的一侧，所述显示模组包括：
    驱动基板；
    像素单元层，与所述驱动基板层叠设置，所述像素单元层包括多个像素单元，每一所述多个像素单元包括三个第一微型发光二极管和一个第二微型发光二极管，所述第二微型发光二极管用于替代一个不能正常工作的所述第一微型发光二极管在所述像素单元中的发光功能；以及
    透明基板，与所述像素单元层层叠设置，设置在所述驱动基板远离所述壳体组件的一侧，所述像素单元层位于所述驱动基板和所述透明基板之间。
  20. 根据权利要求19所述的电子设备，其特征在于，对于同一所述像素单元，设置有所述第二微型发光二极管的所述像素单元的色坐标与各所述第一微型发光二极管正常工作时所述像素单元的色坐标相同。
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