WO2022071302A1 - Procédé de production de cellule solaire à film mince de pérovskite - Google Patents

Procédé de production de cellule solaire à film mince de pérovskite Download PDF

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WO2022071302A1
WO2022071302A1 PCT/JP2021/035597 JP2021035597W WO2022071302A1 WO 2022071302 A1 WO2022071302 A1 WO 2022071302A1 JP 2021035597 W JP2021035597 W JP 2021035597W WO 2022071302 A1 WO2022071302 A1 WO 2022071302A1
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transport layer
perovskite thin
thin film
carrier transport
solar cell
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Japanese (ja)
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崇之 京極
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株式会社カネカ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to a method for manufacturing a perovskite thin-film solar cell.
  • a crystalline silicon solar cell using a crystalline silicon substrate for the photoelectric conversion part and a thin film type solar cell using an inorganic thin film such as an amorphous silicon thin film for the photoelectric conversion part are known.
  • a thin film solar cell a perovskite thin film solar cell using a perovskite thin film which is an organic thin film (specifically, an organic / inorganic hybrid thin film) in a photoelectric conversion unit is known.
  • Patent Documents 1 and 2 disclose perovskite thin-film solar cells.
  • a first electrode layer (anode electrode or cathode electrode), which is a transparent conductive film, and a first carrier transport layer (hole transport film or electron), which are sequentially formed on a transparent substrate on the light receiving side, are formed.
  • a coating method or a solution method is known as a method for forming a second carrier transport layer (electron transport film or hole transport film) on a perovskite thin film. This is because when the sputtering method is used, the perovskite thin film is sputter-damaged and the conversion efficiency of the solar cell is lowered.
  • a second carrier transport layer electron transport film or hole transport film
  • the method for manufacturing a perovskite thin-film solar cell according to the present invention is a method for manufacturing a perobskite thin-film solar cell using a perobskite thin film as a photoelectric conversion thin film, wherein the perobskite thin film forming step for forming the perobskite thin film and the perobskite thin film are formed.
  • a carrier transport layer forming step of forming a carrier transport layer that transports carriers that are electrons or holes is included.
  • a sputtering method using a vacuum chamber is used, metal particles are introduced into the vacuum chamber, and a DC power source is used as a power source for discharging in the vacuum chamber.
  • the spatter damage generated in the perovskite thin film can be reduced.
  • FIG. 1 is a cross-sectional view showing a solar cell according to the first embodiment.
  • the solar cell 1 shown in FIG. 1 is a perovskite thin film type solar cell using a perovskite thin film as a photoelectric conversion thin film.
  • the solar cell 1 includes a substrate 10, a first electrode layer 21, a first carrier transport layer 31, a perovskite thin film 40, a second carrier transport layer 32, and a second electrode layer 22.
  • the substrate 10 is made of a transparent substrate having insulation and light transmission.
  • Examples of the material of the substrate 10 include glass and resin.
  • the first electrode layer 21 is formed on the substrate 10 and functions as an anode.
  • the first electrode layer 21 is made of a transparent conductive film (Transparent Conductive Oxide: TCO) having conductivity and light transmission.
  • transparent conductive metal oxides such as indium oxide, tin oxide, zinc oxide, titanium oxide and composite oxides thereof are used.
  • an indium-based composite oxide containing indium oxide as a main component is preferable.
  • Indium oxide is particularly preferred from the standpoint of high conductivity and transparency.
  • Examples of the dopant include Sn, W, Zn, Ti, Ce, Zr, Mo, Al, Ga, Ge, As, Si, S and the like.
  • ITO Indium Tin Oxide
  • ITO Indium Tin Oxide in which tin is added to an indium oxide is widely known.
  • the first carrier transport layer 31 is formed on the first electrode layer 21, and transports holes (first carriers) among the carriers generated by photoelectric conversion in the perovskite thin film 40 to the first electrode layer 21. It functions as a hole transfer layer (HTL).
  • the first carrier transport layer 31 is made of a semiconductor material having light transmission. Examples of the main material of the first carrier transport layer 31 include nickel oxide (NiO) and copper oxide (Cu 2O ) in the case of a dry process such as a CVD method, a PVD method or a sputtering method.
  • PTAA Poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine)
  • Spiro-MeOTAD Spiro-MeOTAD
  • the perovskite thin film 40 is formed on the first carrier transport layer 31 and functions as a photoelectric conversion layer.
  • the main material of the perovskite thin film 40 include MAPbI 3 , MAPbBr 3 , or MAPbI x Br (3-x) in the case of a dry process such as a thin film deposition method.
  • the second carrier transport layer 32 is formed on the perovskite thin film 40, and transports electrons (second carriers) among the carriers generated by photoelectric conversion in the perovskite thin film 40 to the second electrode layer 22. It functions as an Electron Transport Layer (ETL).
  • the second carrier transport layer 32 is made of a semiconductor material having light transmission. Examples of the main material of the second carrier transport layer 32 include titanium oxide (TiO 2 ), zinc oxide (ZnO), tin oxide (SnO 2 ) and the like. Further, the second carrier transport layer 32 may contain Nb, Al, Si or the like as an auxiliary material.
  • the second electrode layer 22 is formed on the second carrier transport layer 32 and functions as a cathode.
  • the second electrode layer 22 is a conductive metal layer. Examples of the material of the second electrode layer 22 include Ag, Au, Cu and the like.
  • the solar cell 1 generates a current corresponding to the light incident from the substrate 10 side and outputs the current to the first electrode layer 21 and the second electrode layer 22.
  • FIG. 2 is a diagram showing an example of a sputtering apparatus including a vacuum chamber.
  • FIG. 3 is a diagram showing an example of a gas carrier type vapor deposition apparatus provided with a vacuum chamber, and
  • FIG. 4 is a diagram showing an example of a shower head in the gas carrier type vapor deposition apparatus shown in FIG.
  • a transparent conductive film is formed on the substrate 10 as the first electrode layer 21 (first electrode layer forming step).
  • the method for forming the transparent conductive film is not particularly limited, but a CVD method (chemical vapor deposition method) using a vacuum chamber, a PVD method (physical vapor deposition method), a sputtering method, or the like is used.
  • the surface of the transparent conductive film may be washed (for example, PW / IPA (isopropyl alcohol)), dried (for example, 150 degrees for 1 hour), and treated with ozone.
  • a hole transport layer is formed as the first carrier transport layer 31 on the first electrode layer 21 (first carrier transport layer forming step).
  • the method for forming the hole transport layer is not particularly limited, and examples thereof include a dry process such as a CVD method, a PVD method, or a sputtering method, or a wet process such as a coating method and a printing method. Among these, the sputtering method is preferable from the viewpoint of forming a dense film.
  • the substrate 10 is placed in a heater in the vacuum chamber of the sputtering apparatus, and the main material of the hole transport layer is placed as a target at a position facing the film forming surface of the substrate 10 in the vacuum chamber. Then, the buffer gas is supplied into the vacuum chamber.
  • An RF power supply is used as a discharge power source for discharging in the vacuum chamber.
  • -Thickness 200 nm or more and 500 nm or less- (Target)
  • Main material of hole transport layer Nickel oxide (NiO), Copper oxide (Cu 2 O), etc.
  • - (Target) Metallic material Dope: None- (Buffalo gas) Ar Gas supply amount 9.8 sccm, O 2 gas supply amount 0.2 sccm (addition of 2 wt% oxygen) ⁇ Vacuum chamber pressure 0.3Pa ⁇ Discharge power supply: RF, power 150W ⁇ Substrate temperature 20 °C ⁇ 60 °C
  • the perovskite thin film 40 is formed on the first carrier transport layer 31 (perovskite thin film forming step).
  • the method for forming the perovskite thin film 40 is not particularly limited, and examples thereof include a dry process such as a vapor deposition method, and a wet process such as a printing method, a coating method, or a solution method.
  • the thin-film deposition method is preferable because the film can be formed in an environment in which water that causes deterioration of the perovskite thin film is removed.
  • the vapor deposition methods the gas carrier type vapor deposition method devised by the inventor of the present application is more preferable.
  • a shower head having a plurality of openings arranged in a two-dimensional shape is used, the gasified material is gas-carriered with a buffer gas, and a vacuum chamber is provided through the plurality of openings of the shower head. Introduce material gas inside.
  • the perovskite thin film can be uniformly formed even if the area of the solar cell becomes large.
  • the substrate 10 is placed in a heater in the vacuum chamber of the vapor deposition apparatus, and the buffer gas is discharged from the opening of the shower head arranged at a position facing the film forming surface of the substrate 10 in the vacuum chamber. Supply.
  • the shower head has a plurality of openings arranged in a two-dimensional manner on the surface facing the substrate 10.
  • the size of the openings is about 1 mm in diameter, and the intervals between the openings are about 12 mm.
  • the size of the substrate 10 is about 180 mm ⁇ about 180 mm, 169 openings having a diameter of 1 mm are arranged at intervals of 12 mm (aperture ratio 0.4%).
  • Examples of the main material of the perovskite thin film 40 include MAPbI 3 , MAPbBr 3 , or MAPbI x Br (3-x) in the case of a dry process such as a thin film deposition method.
  • the material PbI 2 (vaporization temperature 250 to 350 ° C.) of the perovskite thin film is gasified (for example, 400 ° C.), gas-carriered by Ar gas, and introduced into the vacuum chamber through the opening of the shower head.
  • the material MAI (vaporization temperature 150 to 200 ° C.) of the perovskite thin film is gasified (for example, 170 ° C.), gas-carriered by Ar gas, and introduced into the vacuum chamber through the opening of the shower head.
  • post-annealing may be performed (eg, 120 degrees, 30 minutes).
  • an electron transport layer is formed as the second carrier transport layer 32 on the perovskite thin film 40 (second carrier transport layer forming step).
  • a sputtering method is used as a method for forming the electron transport layer.
  • the sputtering method uses an RF power supply as a discharge power supply. This is because when a DC power supply is used as the discharge power supply, the discharge energy in the vacuum chamber is large and the substrate to be formed or the film on the substrate is greatly damaged.
  • a coating method or a solution method is known as a method for forming an electron transport layer or a hole transport layer on a perovskite thin film. This is because when the sputtering method is used, the perovskite thin film is sputter-damaged and the conversion efficiency of the solar cell is lowered.
  • the inventor of the present application is used as a method for forming an electron transport layer on a perovskite thin film.
  • -As a discharge power supply use a DC power supply that has a larger discharge energy than the RF power supply.
  • the resistance of the material can be reduced, so that the film formation rate can be increased and the film formation time can be shortened, resulting in a perovskite thin film.
  • spatter damage can be reduced.
  • the substrate 10 is placed in a heater in the vacuum chamber of the sputtering apparatus, and the main material of the electron transport layer is placed as a target at a position facing the film forming surface of the substrate 10 in the vacuum chamber.
  • a DC power supply is used as the discharge power supply for discharging in the vacuum chamber.
  • -Thickness 100 nm or more and 400 nm or less- (Target)
  • Main material of electron transport layer Titanium oxide (TiO 2 ), Zinc oxide (ZnO), Tin oxide (SnO 2 ), etc.
  • Metallic material Doping: Nb, Al, Si, etc. (for example, 1% or more and 5% or less with respect to all target materials)
  • Ar gas supply amount 10 sccm (without oxygen addition) ⁇
  • Discharge power supply DC, power 150W ⁇
  • the metal particles are introduced into the vacuum chamber by doping the target main material with the metal material, but the present invention is not limited to this, and the metal particles are introduced into the vacuum chamber separately from the target main material. It may be introduced.
  • a metal film is formed on the second carrier transport layer 32 as the second electrode layer 22.
  • the method for forming the metal film is not particularly limited, and examples thereof include a dry process such as a CVD method using a vacuum chamber, a PVD method or a sputtering method, or a wet process such as a printing method or a coating method. Among these, the sputtering method is preferable. As a result, the perovskite thin-film solar cell 1 of the first embodiment shown in FIG. 1 is obtained.
  • a sputtering method is used in the second carrier transport layer forming step of forming the second carrier transport layer 32 on the perovskite thin film 40, and the RF power source is used. Also uses a DC power supply with large discharge energy. Furthermore, by introducing metal particles into the vacuum chamber, the resistance of the plasma state is reduced. As a result, the film forming rate can be increased, the film forming time can be shortened, and the spatter damage generated in the perovskite thin film 40 can be suppressed. Therefore, it is possible to suppress a decrease in the conversion efficiency of the solar cell 1.
  • the sputtering method may also be used in the step of forming the first carrier transport layer 31.
  • the first carrier transport layer 31 and the second carrier transport layer 32 sandwiching the perovskite thin film 40 become a denser film as compared with the case where the perovskite thin film 40 is formed by the coating method or the solution method, and the moisture content to the perovskite thin film 40 is increased. Infiltration can be suppressed. Therefore, the reliability of the solar cell 1 can be improved.
  • the vapor deposition method may be used in the step of forming the perovskite thin film 40, and further, the sputtering method may be used in the step of forming the first electrode layer 21 and the second electrode layer 22. May be used.
  • an all-dry process vacuum process
  • the perovskite thin film can be manufactured in an environment in which water that causes deterioration is removed.
  • a gas carrier type vapor deposition method may be used in the step of forming the perovskite thin film 40. That is, a shower head having a plurality of openings arranged in a two-dimensional manner may be used, and the material gas of the perovskite thin film 40 may be introduced into the vacuum chamber from the plurality of openings of the shower head. According to this, even if the area of the solar cell 1 becomes large, the perovskite thin film 40 can be uniformly formed.
  • the second carrier transport layer 32 when the sputtering method is used in the step of forming the second carrier transport layer 32, the second is compared with the case where the coating method or the solution method is used.
  • the carrier transport layer 32 becomes a dense film.
  • the second carrier transport layer 32 suppresses the invasion of Ag into the perovskite thin film 40. can do. Therefore, deterioration of the performance of the solar cell 1 can be suppressed.
  • the hole transport layer was formed as the first carrier transport layer 31, and the electron transport layer was formed as the second carrier transport layer 32. That is, in the first embodiment, an electron transport layer was formed on the perovskite thin film 40.
  • the electron transport layer is formed as the first carrier transport layer 31, and the hole transport layer is formed as the second carrier transport layer 32. That is, in the second embodiment, the hole transport layer is formed on the perovskite thin film 40.
  • FIG. 5 is a cross-sectional view showing the solar cell according to the second embodiment.
  • the materials and functions of the first carrier transport layer 31 and the second carrier transport layer 32 are different in the solar cell 1 shown in FIG.
  • the first electrode layer 21 functions as a cathode and the second electrode layer 22 functions as an anode.
  • the first carrier transport layer 31 functions as an electron transport layer (ETL) that transports electrons (first carriers) among the carriers generated by photoelectric conversion in the perovskite thin film 40 to the first electrode layer 21.
  • ETL electron transport layer
  • the main material of the first carrier transport layer 31 includes titanium oxide (TiO 2 ), zinc oxide (ZnO), tin oxide (SnO 2 ) and the like. Be done.
  • PTAA Poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine)
  • Spiro-MeOTAD Spiro-MeOTAD
  • the second carrier transport layer 32 functions as a hole transport layer (HTL) that transports holes (second carriers) among the carriers generated by photoelectric conversion in the perovskite thin film 40 to the second electrode layer 22.
  • HTL hole transport layer
  • the main material of the second carrier transport layer 32 include nickel oxide (NiO) and copper oxide (Cu 2O ).
  • the second carrier transport layer 32 may contain Li, Mg or the like as an auxiliary material.
  • an electron transport layer is formed as the first carrier transport layer 31.
  • the method for forming the electron transport layer is not particularly limited, and examples thereof include a dry process such as a CVD method, a PVD method, or a sputtering method, or a wet process such as a coating method and a printing method. Among these, the sputtering method is preferable from the viewpoint of forming a dense film.
  • the substrate 10 is placed in a heater in the vacuum chamber of the sputtering apparatus, and the main material of the electron transport layer is placed as a target at a position facing the film forming surface of the substrate 10 in the vacuum chamber.
  • Supply buffer gas into the vacuum chamber.
  • An RF power supply is used as a discharge power source for discharging in the vacuum chamber.
  • -Thickness 10 nm or more and 40 nm or less- (Target)
  • Main material of electron transport layer Titanium oxide (TiO 2 ), Zinc oxide (ZnO), Tin oxide (SnO 2 ), etc.
  • - (Target) Metallic material Doping: None- (Buffal gas) Ar gas supply amount 9.8 sccm, O 2 gas supply amount 0.2 sccm (addition of 2% oxygen) ⁇ Vacuum chamber pressure 0.3Pa ⁇ Discharge power supply: RF, power 150W ⁇ Substrate temperature 20 °C ⁇ 60 °C
  • the hole transport layer is formed as the second carrier transport layer 32.
  • -A sputtering method is used as a method for forming a hole transport layer on a perovskite thin film.
  • -As a discharge power supply use a DC power supply that has a larger discharge energy than the RF power supply.
  • the resistance of the material can be reduced.
  • the film-forming rate can be increased, the film-forming time can be shortened, and as a result, the spatter damage generated in the perovskite thin film can be reduced.
  • the substrate 10 is placed in a heater in the vacuum chamber of the sputtering apparatus, and the main material of the hole transport layer is placed as a target at a position facing the film forming surface of the substrate 10 in the vacuum chamber. Then, the buffer gas is supplied into the vacuum chamber. A DC power supply is used as the discharge power supply for discharging in the vacuum chamber.
  • -Thickness 10 nm or more and 50 nm or less-
  • Main material of hole transport layer Nickel oxide (NiO) or copper oxide (Cu 2O ) etc.
  • - (Target) Metal material Dope Li or Mg etc. (For example, 1% or more and 15% or less with respect to all target materials)
  • ⁇ (Buffer gas) Ar gas supply amount 10 sccm (without oxygen addition)
  • Discharge power supply DC, power 150W ⁇ Substrate temperature 20 °C ⁇ 60 °C
  • the metal particles are introduced into the vacuum chamber by doping the target main material with the metal material, but the present invention is not limited to this, and the metal particles are introduced into the vacuum chamber separately from the target main material. It may be introduced.
  • the method for manufacturing the solar cell of the second embodiment also has the same advantages as the method for manufacturing the solar cell of the first embodiment.
  • the present invention is not limited to the above-described embodiments, and various modifications and modifications can be made.
  • it is also applicable to the production of a perovskite thin-film solar cell in a so-called tandem type solar cell in which a crystalline silicon-based solar cell or an amorphous silicon thin-film solar cell and a perovskite thin-film solar cell are combined. ..
  • Example 1 Using the method for manufacturing a perovskite thin-film solar cell of the first embodiment, the perovskite thin-film solar cell shown in FIG. 1 was manufactured as Example 1.
  • the main configurations and main manufacturing methods of the perovskite thin-film solar cell of Example 1 are as follows.
  • Substrate 10 Glass first electrode layer 21: Transparent conductive film (TCO) 1st carrier transport layer 31: hole transport layer, main material NiO Perovskite thin film 40: Perovskite thin film, main material MAPbI 3 Second carrier transport layer 32: electron transport layer, main material TiO 2 , doped metal material Nb Second electrode layer 22: Ag
  • a hole transport layer was formed on the substrate 10 and the first electrode layer 21 by using a sputtering method.
  • the film forming conditions are as follows. ⁇ Set film thickness 20 nm ⁇ (Target) Main material of hole transport layer: NiO ⁇ (Target) Metallic material dope: None ⁇ (Buffer gas) Ar gas supply amount 9.8 sccm, O 2 gas supply amount 0.2 sccm (2% oxygen added) ⁇ Vacuum chamber pressure 0.3Pa ⁇ Discharge power supply: RF, power 150W ⁇ Substrate temperature 50 °C
  • An electron transport layer was formed on the perovskite thin film by a sputtering method.
  • the film forming conditions are as follows. ⁇ Set film thickness 30 nm ⁇ (Target) Main material of electron transport layer: TiO 2 (Target) Metallic material dope: Nb, 5 wt% (% by weight) of the total target weight ⁇ (Buffer gas) Ar gas supply amount 10 sccm (without oxygen addition) ⁇ Vacuum chamber pressure 0.3Pa ⁇ Discharge power supply: DC, power 150W ⁇ Substrate temperature 50 °C
  • Example 2 In Example 2, the main material and the doped metal material at the time of film formation of the electron transport layer are different in Example 1. The differences between the main configurations of the solar cells of Example 2 and the main manufacturing methods are as follows.
  • Second carrier transport layer 32 electron transport layer, main material ZnO, doped metal material Al (Al 2 O 3 )
  • Example 3 the main material and the doped metal material at the time of film formation of the electron transport layer are different in Example 1.
  • the differences between the main configurations of the solar cell of Example 3 and the main manufacturing methods are as follows.
  • Second carrier transport layer 32 electron transport layer, main material ZnO, doped metal material Si (SiO 2 )
  • Comparative Example 1 In Comparative Example 1, the doped metal material and the discharge power source at the time of forming the film of the electron transport layer are different in Example 1. The differences between the main configurations of the solar cell of Comparative Example 1 and the main manufacturing methods are as follows.
  • Second carrier transport layer 32 electron transport layer, main material TIM 2 (without metal material dope)
  • Comparative Example 1 when the second carrier transport layer 32 is formed on the perovskite thin film 40, a solar cell is used when a sputtering method is used, metal particles are not introduced into the vacuum chamber, and an RF power source is used as a discharge power source. Conversion efficiency is low. It is considered that this is because when the second carrier transport layer 32 is formed, the film forming rate is slow, in other words, the film forming time is long, and as a result, the perovskite thin film 40 is sputter-damaged.
  • the conversion efficiency of the solar cell was higher in Example 3 than in Example 1. Furthermore, the hysteresis difference of the Voc-Jsc characteristics was smaller in Example 3 than in Example 1.
  • the hysteresis difference is the difference between the Voc-Jsc characteristic (Forward) measured while gradually increasing Voc and the Voc-Jsc characteristic (Revverse) measured while gradually decreasing Voc. According to this, ZnO + Si is preferable to TIO 2 + Nb as a combination of materials for the electron transport layer.
  • Perovskite thin-film solar cell 10 Substrate 21 First electrode layer (anode or cathode) 22 Second electrode layer (cathode or anode) 31 First carrier transport layer (hole transport layer or electron transport layer) 32 Second carrier transport layer (electron transport layer or hole transport layer) 40 perovskite thin film

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Abstract

Procédé de production de cellule solaire à film mince de pérovskite grâce auquel une détérioration par pulvérisation sur un film mince de pérovskite peut être réduite même si une seconde couche de transport de porteur est formée sur le film mince de pérovskite par pulvérisation. Le procédé de production de cellule solaire à film mince de pérovskite utilise un film mince de pérovskite en tant que film mince de conversion photoélectrique, ledit procédé comprenant : une étape de formation de film mince de pérovskite pour former un film mince de pérovskite 40 ; et une étape de formation de couche de transport de porteur pour former, sur le film mince de pérovskite 40, une couche de transport de porteur 32 qui transporte un porteur qui est un électron ou un trou. À l'étape de formation de couche de transport de porteur, un procédé de pulvérisation utilisant une chambre à vide est utilisé, des particules métalliques sont introduites dans la chambre à vide, et une alimentation électrique CC est utilisée en tant qu'alimentation électrique pour décharge à l'intérieur de la chambre à vide.
PCT/JP2021/035597 2020-09-30 2021-09-28 Procédé de production de cellule solaire à film mince de pérovskite WO2022071302A1 (fr)

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CN116234338A (zh) * 2023-04-27 2023-06-06 广东爱旭科技有限公司 太阳能电池

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