WO2022065881A1 - Capteur ultrasonore permettant l'établissement d'informations d'empreintes digitales tridimensionnelles - Google Patents

Capteur ultrasonore permettant l'établissement d'informations d'empreintes digitales tridimensionnelles Download PDF

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WO2022065881A1
WO2022065881A1 PCT/KR2021/012966 KR2021012966W WO2022065881A1 WO 2022065881 A1 WO2022065881 A1 WO 2022065881A1 KR 2021012966 W KR2021012966 W KR 2021012966W WO 2022065881 A1 WO2022065881 A1 WO 2022065881A1
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electrode
nanorods
flip
nanorod
chip
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PCT/KR2021/012966
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English (en)
Korean (ko)
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김경국
오세미
김소현
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한국산업기술대학교 산학협력단
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Priority claimed from KR1020200125803A external-priority patent/KR102445831B1/ko
Priority claimed from KR1020200125802A external-priority patent/KR20220042681A/ko
Application filed by 한국산업기술대학교 산학협력단 filed Critical 한국산업기술대학교 산학협력단
Publication of WO2022065881A1 publication Critical patent/WO2022065881A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Definitions

  • the present invention relates to an ultrasonic sensor, and more particularly, to an ultrasonic sensor that can be manufactured by packaging by flip-chip bonding and can construct three-dimensional fingerprint information.
  • Fingerprint recognition is one of the most effective and popular ways to identify yourself. There are several methods of recognizing a fingerprint, and most fingerprint authentication methods including smartphones up to now employ the electrostatic method.
  • the capacitive capacitive method is the most common fingerprint recognition method, but there is a drawback that a fingerprint can be copied and used, so the need for a fingerprint method with enhanced security is increasing. Accordingly, a fingerprint recognition method that has recently received attention is a fingerprint recognition method using ultrasonic waves.
  • a sensor For ultrasonic fingerprint recognition, a sensor must be constructed using a material called lead zirconate titanate (PZT).
  • PZT materials are commonly known as piezoelectric materials.
  • a piezoelectric material is a material in which mechanical force is converted into an electrical signal or, conversely, a mechanical change is generated by an electrical signal.
  • the method of emitting ultrasonic waves using PZT material and detecting fingerprints with reflected and returned ultrasonic information is collectively called the ultrasonic fingerprint method.
  • the ultrasonic sensor is implemented as an ultrasonic sensor through the packaging process of mounting the die provided with the sensor element for sensing on the PCB board.
  • the PCB board and the sensor element must be electrically connected.
  • Methods of electrical connection in such a packaging process include a wire bonding method and a flip chip bonding method.
  • Flip-chip bonding refers to a method of bonding a semiconductor chip to a circuit board without using an additional connection structure such as a metal lead wire or an intermediate medium such as a ball grid array (BGA), but using an electrode pattern on the bottom of the chip as it is. It is also called a leadless semiconductor, and since the package is the same size as the chip, it is advantageous for miniaturization and weight reduction, and it is a bonding method that can reduce the distance between electrodes.
  • BGA ball grid array
  • the conventional ultrasonic fingerprint sensor is manufactured using a micro-mechanical (MEMS) process. In this case, it is necessary to proceed with a process with a height difference of 100 ⁇ m or more. However, there is a disadvantage that a step difference of 100 ⁇ m or more cannot be overcome with the general thin film process, so a new process must be applied. In this regard, the present applicant has proposed a method of manufacturing an ultrasonic sensor of a new process, and the related applicant's prior patent (Korean Patent No. 10-2070851) will be described later.
  • the security problem in the above case is because the two-dimensional ultrasonic fingerprint recognition method is applied to fingerprint authentication. Recently, in 2020, Samsung is reporting to the media that the Galaxy Note 20 will be equipped with an improved ultrasonic fingerprint recognition technology called 3D Sonic max from Qualcomm. However, as for the currently reported 3D Sonic Max's ultrasonic fingerprint recognition method, the technical details that 3D fingerprint mapping was chosen to enhance security have not been disclosed, while the method of performing security recognition with one fingerprint is not disclosed. By detecting fingerprints at the same time and checking with AND conditions, security is improved and improvements are being announced.
  • Qualcomm's ultrasonic fingerprint sensor does not use a method of detecting the valleys and ridges of a fingerprint with a nano-rod structure.
  • Qualcomm's prior patent discloses that an ultrasonic sensor is used, but the ultrasonic sensor is capacitively detected as a fingerprint authentication principle. Therefore, the conventional ultrasonic sensor uses an ultrasonic sensing method using a PZT element as a sensing principle, but maps a fingerprint in two dimensions by capacitive sensing similar to a capacitive sensing method. Therefore, authentication is performed only when a finger is in contact despite the ultrasonic principle.
  • the performance of software that determines the degree of capacitiveness is important in determining the security of a fingerprint as the 'capacitiveness' of ultrasound is ultimately a factor that distinguishes fingerprints. For this reason, it is believed that Samsung's Galaxy 10 software security update has been carried out. Since the two-dimensional fingerprint mapping information is a method of reading the 'pattern' of a fingerprint, if another person's fingerprint is copied using a tape, etc., there is a limit to security because it cannot be distinguished from being duplicated.
  • the implementation of an ultrasonic sensor capable of three-dimensional fingerprint mapping can be a game changer in the conventional fingerprint recognition market.
  • the Applicant's Prior Registration Patent No. 10-2070851 Manufacturing method of an ultrasonic fingerprint sensor using a nanorod structure
  • the implementation of an array of a plurality of precise nanorods is It was confirmed that it is possible.
  • the applicant's prior patent discloses the possibility of an ultrasonic sensor capable of flip-chip bonding by suggesting a process completely different from the MEMS process.
  • the present applicant intends to propose an improved structure of an ultrasonic sensor die suitable for packaging and a structure of an ultrasonic sensor die in which flexibility can be secured, based on the prior art.
  • it is intended to provide an ultrasonic sensor for building three-dimensional fingerprint information by packaging the proposed sensor die.
  • An object of the present invention is to provide a sensor die and an ultrasonic sensor advantageous for manufacturing and mass production by bonding and packaging as a flip chip without wiring on a PCB substrate.
  • the present invention provides flip-chip bonding of a plurality of PZT nanorods by controlling a plurality of PZT nanorods as a single electrical contact in a bundle, rather than individually flip chip bonding a plurality of PZT nanorods in a flip chip sensor die.
  • Another object of the present invention is to provide an ultrasonic sensor having a structure in which flexibility is secured so that it can be applied to a flexible display.
  • the present invention provides an ultrasonic sensor
  • a sensing unit in which a plurality of nanorods having a piezoelectric effect are arrayed to sense a user's fingerprint, and a first electrode in electrical contact with the nanorods along a line in the first axial direction of the nanorods to constitute one surface of the sensing unit and a second electrode that is in electrical contact with the nanorod along a line in the second axial direction of the nanorod to configure the other surface of the sensing unit, and is in electrical contact with one end of the first electrode and is in electrical contact with the nanorod in the first axial direction
  • a first flip chip electrode for integrally distributing an electrical signal to the nanorods positioned at a sensor die configured with a second flip chip electrode; and a solder ball is formed at one end or the other end of the first axis in the line in the first axis direction of the arrayed nanorods to contact the first flip chip electrode, and one end of the second axis in the line in the second axis direction of the nanorods or an ultrasonic sensor substrate having
  • the present invention is an ultrasonic sensor
  • a sensing unit in which a plurality of nanorods having a piezoelectric effect are arrayed to sense a user's fingerprint, and a first electrode in electrical contact with the nanorods along a line in the first axial direction of the nanorods to constitute one surface of the sensing unit and a second electrode that is in electrical contact with the nanorod along a line in the second axial direction of the nanorod to configure the other surface of the sensing unit, and is in electrical contact with one end of the first electrode and is in electrical contact with the nanorod in the first axial direction
  • a first flip chip electrode for integrally distributing an electrical signal to the nanorods positioned at a sensor die configured with a second flip chip electrode;
  • a solder ball is formed at one end or the other end of the first axis in the line in the first axis direction of the arrayed nanorods to contact the first flip chip electrode, and one end of the second axis in the line in the second axis direction of the nanorods or an ultrasonic sensor substrate having
  • the present invention is an ultrasonic sensor
  • a control unit that forms three-dimensional fingerprint data by mapping the height (z-axis) information of the valleys or ridges of
  • one flip-chip electrode collectively performs electrical bonding of nanorods arranged in a row or column for ultrasonic sensing. Accordingly, during packaging on the PCB sensor substrate, the area of the bump that is electrically contacted is reduced to less than half the number of the arrayed nanorods.
  • the coordinates of one nanorod can be estimated using two flip-chip electrodes, and one nanorod can transmit an ultrasonic telegram with the time difference of the pulse voltage, so that the two functions of the ultrasonic transmitter and the receiver are can be performed integrally. Accordingly, the configuration of the ultrasonic sensor die can be simplified.
  • the nanorods and adjacent electrodes that are in line contact are disposed in opposite directions, and the lengths of the exposed terminals are configured to be different from each other, so that the area of the electrical contact can be stably secured widely, so that the packaging of the fine nanorods There are advantages to being able to be angry.
  • the upper and lower electrodes that suppress the structural flexibility of the nanorods are provided in a twisted elastic structure.
  • the present invention has a stacked structure in which electrodes are bound on top and bottom of the nanorods, predetermined flexibility is secured, so that the application area can be expanded to flexible displays or wearable devices.
  • the present invention provides an ultrasonic sensor that is easily packaged by bonding to a PCB ultrasonic sensor substrate by flip-chip without wiring.
  • a three-dimensional ultrasonic fingerprint sensor cannot be duplicated, does not require a touch, and can map fingerprint information without a fingerprint contact.
  • there is no need to be exposed to the outer surface of the display because it is unnecessary to determine the capacitive or capacitive property that must be directly contacted, and it has an advantage that it can be designed by ambush at a desired location of the device.
  • FIG. 1 shows a perspective view of a sensor die according to an embodiment of the present invention
  • Fig. 2 shows a top view of the sensor die of Fig. 1;
  • FIG. 3 is a schematic diagram illustrating a state in which three-dimensional fingerprint information is acquired through a fingerprint mapping process of a sensor die according to an embodiment of the present invention.
  • FIG. 4 shows the steps of a method for manufacturing a sensor die according to an embodiment of the present invention.
  • FIG. 5 shows a top view of a sensor die according to another embodiment of the present invention.
  • FIG 6 shows an ultrasonic sensor according to an embodiment of the present invention.
  • FIG. 1 shows a perspective view of a sensor die 10 according to an embodiment of the present invention.
  • the sensor die 10 may include a sensing unit 11 , a first electrode 13 , a second electrode 15 , a flip chip electrode 17 , and a base plate 19 .
  • bumps soldered to the ultrasonic sensor substrate (PCB substrate) during packaging are limited to the flip-chip electrode 17 , so that the number of nanorods 100 of the sensing unit 11 is greater than that of the sensor die 10 . It may consist of few electrical contacts.
  • the flip-chip electrode 17 is a region in which electrical contact is made to the ultrasonic sensor substrate. Therefore, the operation of bonding each of the numerous nanorods 100 is not required.
  • the packaging of the sensor die 10 includes the flip chip electrode 17 of the sensor die 10 on the ultrasonic sensor substrate 30 ( FIG. 6 ) in which a conductive circuit is formed at a position corresponding to the flip chip electrode 17 .
  • This bonding is made, and flip-chip bonding may be performed by thermocompression or underfill technique.
  • the nanorod 100 which is a piezoelectric sensor, individually detects the height of the peak or valley of the fingerprint, and maps the user's fingerprint in three dimensions. Accordingly, the nanorods 100 of the sensor die 10 have a size corresponding to a pixel, which is a pixel during fingerprint mapping.
  • the nanorods 100 are provided in a size ranging from tens to hundreds of micrometers ( ⁇ m) to distinguish the sensitivity of the valleys and ridges of the fingerprint.
  • a sufficient number of nanorods 100 for detecting a fingerprint are arrayed in nxn to constitute a sensing region.
  • a region in which the nanorods 100 are arrayed to sense a user's fingerprint is defined as the sensing unit 11 .
  • each nanorod 100 may be bonded to a circuit board for transmitting and receiving electrical control and electrical signals.
  • a contact path must be formed. Since wiring bonding all of the numerous nanorods 100 in the 3D ultrasonic fingerprint sensor is a commercialized method that is close to impossible, the importance of implementing flip-chip bonding has been described above in the background.
  • the sensor die 10 integrates hundreds of nanorods 100 for each axis to integrate electrical signals and form bumps as a common electrical contact area.
  • the sensor die 10 is a flip-chip method in which bumps, which are common electrical contact areas, are soldered, and electrical signals are integrated into a single contact point with a plurality of nanorods 100 .
  • the electrical contact can be simplified and configured as an area outside the sensing unit 11 .
  • the electrical contacts share the plurality of nanorods 100 , a new technical issue of specifying each position of the nanorods 100 occurs.
  • a unique ultrasonic sensing algorithm capable of specifying the coordinates of each nanorod 100 even though the bump is configured as a common electrical contact area is presented.
  • a detailed configuration of the sensor die 10 will be described.
  • the sensing unit 11 may detect a user's fingerprint by arraying a plurality of nanorods 100 having a piezoelectric effect.
  • the sensing unit 11 may be filled with an insulating material 101 that insulates between the nanorods 100 for detecting the valleys and peaks of the user's fingerprint with ultrasonic waves and the nanorods 100 .
  • the configuration of the insulating material 101 is filled in order to insulate both the nanorods 100 and the pitch of the flip-chip electrode 17, but for the convenience of classification and explanation of the configuration, it is not shown in FIG. 1 and is expressed on the filled area. became
  • Nanorod 100 is a PZT (PbZrO 3 )-based compound, PST (Pb, Sc, Ta) O 3 -based compound, quartz, (Pb, Sm)TiO 3 -based compound, PMN-PT-based compound, PVDF-based compound, and PVDF At least one selected from the group consisting of -TrFe-based compounds may be used.
  • the piezoelectric material for ultrasonic sensing according to the present embodiment has a structure of a filler type, not a thin film type.
  • the insulating material 101 may be at least one selected from the group consisting of resin materials such as epoxy, polyimide, neoprene, polyethylene, PVDF, OCR, OCA, and RU.
  • the insulating material 101 is preferably selected from a flexible resin material or an epoxy-based material.
  • the nanorod 100 is a piezoelectric element, and may cause a piezoelectric effect for converting mechanical energy into electrical energy or an inverse piezoelectric effect for causing mechanical displacement by applying electrical energy.
  • a voltage is applied to the nanorod 100 according to the present embodiment through the first electrode 13 and the second electrode 15, and the applied voltage causes mechanical displacement to emit ultrasonic waves.
  • the nanorod 100 has a pillar-type structure and transmits ultrasonic waves on the same z-axis, and the emitted ultrasonic waves are reflected from the fingerprint.
  • the ultrasonic sensor substrate which is a PCB substrate on which the sensor die 10 is packaged, receives an output voltage.
  • the sensing unit 11 in which the nanorods 100 are arrayed in an nxn array 11 transmits ultrasonic waves from the nanorods 100 by application of a pulse voltage, and the transmitted ultrasonic waves are reflected from the user's fingerprint and are again received by the nanorods 100 .
  • the depth (z) information of the fingerprint may be sensed by using the pulse voltage generated by the nanorods 100 upon reception of ultrasonic waves.
  • the sensing unit 11 enables a three-dimensional mapping of a user's fingerprint with the plane coordinate (x-y) information and the depth (z) information of the arrayed nanorods 100 .
  • the sensing unit 11 is configured to receive the ultrasonic wave reflected from the user's fingerprint by means of which the ultrasonic wave was transmitted, so that the nanorod 100 serves as both the ultrasonic wave generating means and the receiving means.
  • an ultrasonic fingerprint sensor includes two components: an ultrasonic wave generating means and an ultrasonic wave receiving means.
  • the nanorod 100 functions by integrating an ultrasonic generator and a receiver.
  • a control unit provided on the ultrasonic sensor substrate so that the nanorod 100 functions both for generating and receiving ultrasonic waves controls the pulse voltage with a time difference.
  • the controller 50 ( FIG. 6 ) for controlling the sensor die 10 , which will be described later in this embodiment, applies a pulse voltage to the sensing unit 11 , the nanorods 100 generate ultrasonic waves and then ultrasonic waves A control voltage is applied in the form of a clock so that the pulse voltage is not applied until the time of receiving .
  • the control unit 50 (FIG. 6) detects the output voltage returned after a predetermined time in micro units from the point in time when the pulse voltage is applied to calculate the height information of the fingerprint.
  • the controller 50 controls the applied voltage by setting a clock with a time difference to receive the pulse voltage, the time in micro units may be delayed for fingerprint recognition, but the nanorod ( 100) will be able to combine the two functions of transmitting and receiving.
  • the first electrode 13 may be in electrical contact with one end of the nanorod 100 to be configured on one surface of the sensing unit 11 .
  • the first electrode 13 may be in contact with one surface of the A number of nanorods 100 arranged in a line of the first axis (x axis) in the array of the nanorods 100 of the sensing unit 11 .
  • the second electrode 15 may be in contact with the other surface of the B nanorods 100 arranged in a line of the second axis (y axis) in the array of the nanorods 100 of the sensing unit 11 . .
  • the first electrodes 13 are line-contacted along the first axis of the nanorods 100 arranged in a line on the upper surface of the nanorods 100 .
  • the first electrode 13 is in contact with the nanorods 100 of the first axis in the same direction as the upper surface of the nanorod 100 to constitute the upper surface of the sensing unit 11 .
  • the second electrode 15 is line-contacted along the second axis of the nanorods 100 arranged in a line on the lower surface of the nanorods 100 .
  • the first axis and the second axis may be orthogonal to each other.
  • the first axis and the second axis represent different axes, and the reason for having different axes is to specify the coordinates of the nanorods 100 later.
  • the second electrode 15 is in contact with the nanorods 100 of the second axis in the same direction as the lower surface of the nanorod 100 to constitute the lower surface of the sensing unit 11 .
  • the flip-chip electrodes 17 soldered to the ultrasonic sensor substrate during packaging may be formed to be less than 1/2 of the total number (AxB) of the nanorods 100 .
  • AxB the total number of the nanorods 100 .
  • the first and second electrodes 13 and 15 are contacted with a line by integrating all the nanorods 100 in one column or row along different axes (x-axis and y-axis). Accordingly, the exposed ends of the first and second electrodes 13 and 15 to be terminals are reduced to less than 1/2 of the total number AxB of the nanorods 100 .
  • FIG. 2 shows a top view of the sensor die 10 of FIG. 1 .
  • a coupling relationship between the first electrode 13 , the second electrode 15 , and the flip-chip electrode 17 will be described with reference to FIG. 2 .
  • the first electrode 13 may alternately be in line contact with the nanorod array so that an end of the electrode exposed to be in electrical contact with the flip chip electrode 17 faces in a direction opposite to the adjacent first electrode 13 .
  • the first electrode 13 is in line contact with the nanorod 100 in the direction of the first axis, is formed to have a length longer than the first axis of the sensing unit 11, and one end is exposed. It is preferable that the end of the first electrode 13 is exposed to only one of both sides of the sensing unit 11 . The end exposed to one side functions as a terminal.
  • the terminal is connected to the flip chip electrode 171 .
  • the exposed terminals of the first electrode 13 are staggered so as to face different sides among both sides of the sensing unit 11 . Accordingly, the interval between the flip chip electrodes 171, which will be described later, may be twice as wide as the pitch interval of the nanorod 100 array.
  • the first electrode 13 has an exposure length different from that of the adjacent first electrode 13 in which an end of the electrode exposed in order to make electrical contact with the flip chip electrode 171 is exposed in the same direction.
  • the adjacent first electrodes 13 with the ends of the first electrodes 13 exposed in the same direction correspond to the second spaced apart first electrodes 13 . This is because the ends of the first electrodes 13 spaced apart from each other are staggered in different directions.
  • the second electrode 15 may be electrically contacted to the other end of the nanorod 100 to be configured on the other surface of the sensing unit 11 . 1 , the other end of the nanorod 100 may be the lower end of the nanorod 100 , and the other surface of the sensing unit 11 may be the lower surface of the sensing unit 11 .
  • the second electrode 15 may alternately be in line contact with the nanorod 100 array so that the end of the electrode exposed to make electrical contact with the flip chip electrode 17 faces in the opposite direction to the adjacent second electrode 15 . there is.
  • the second electrode 15 is line-contacted with the nanorod 100 in the direction of the second axis, is formed to have a length longer than the second axis of the sensing unit 11, and one end is exposed. It is preferable that an end of the second electrode 15 is exposed to only one of both sides of the sensing unit 11 . The end exposed to one side functions as a terminal.
  • the terminal is connected to the flip chip electrode 173 .
  • the exposed terminals of the second electrode 15 face different sides among both sides of the sensing unit 11 . Accordingly, the interval between the flip chip electrodes 173, which will be described later, may be twice as wide as the pitch interval of the nanorod 100 array.
  • the second electrode 15 has an exposure length different from that of the adjacent second electrode 15 in which an end of the electrode exposed in order to make electrical contact with the flip chip electrode 17 is exposed in the same direction.
  • the adjacent second electrodes 15 with the ends of the second electrodes 15 exposed in the same direction correspond to the second electrodes 15 spaced apart from each other. This is because the ends of the second electrodes 15 spaced apart first are displaced in different directions.
  • the difference between the exposure lengths of the terminals and the adjacent first electrodes 15 in which the ends of the second electrodes 15 are exposed in the same direction provide a wider gap to the flip-chip electrode 173, which will be described later. Accordingly, bonding can be facilitated during packaging of the sensor die 10 and contact defects can be minimized.
  • the flip-chip electrode 17 may be in electrical contact with one end of the first electrode 13 or the second electrode 15 , so that electrical signals of the N nanorods 100 may be integrally energized.
  • the flip-chip electrode 17 may be divided into a first flip-chip electrode 171 and a second flip-chip electrode 173 .
  • the flip chip electrode 17 may be provided as a conductive material including a material selected from the group consisting of Si, GaAs, InAs, InN, Ge, ZnO, and Ga 2 O 3 .
  • the sheet resistance shrinkage is 100 ⁇ or less, and the shrinkage ratio is 3 to 5%.
  • the first flip-chip electrode 171 is an electrode that is bound to the first electrode 13 and applies a voltage to the first electrode 13 .
  • the second flip-chip electrode 173 is an electrode coupled to the second electrode 15 to apply a voltage to the second electrode 15 .
  • the flip chip electrode 17 may be provided to have the same pillar structure as that of the nanorod 100 when it is bound to an electrode positioned on the upper surface of the nanorod 100 .
  • the flip-chip electrode 17 may refer to a bump region formed in the terminal of the electrode that is in line contact with the lower surface of the nanorod 100 .
  • the flip-chip electrode 17 refers to an electrical contact area for flip-chip bonding the exposed terminals of the first and second electrodes 13 and 15 described above.
  • the flip-chip electrode 17 is disposed on the outside of the nanorod 100 and provides a bonding area as an outer area of the sensing unit 11 .
  • the flip chip electrode 17 may be manufactured based on a conductive mold. In this regard, it will be described later with reference to FIG. 4 .
  • the flip chip electrode 17 is in electrical contact with the nanorods 100 in an N:1 relationship by integrally applying a pulse voltage for ultrasonic generation to the N nanorods 100 . Accordingly, in the sensor die 10 according to the present embodiment, the bumps soldered to the ultrasonic sensor substrate during packaging are limited to the flip-chip electrodes 17 , so that the number of electrical contacts of the sensing unit 11 is smaller than the number of nanorods 100 . can be composed of
  • the base plate 19 may insulate the lower surface of the second electrode 15 located in the sensing unit 11 among regions of the second electrode 15 configured on the other surface of the sensing unit 11 . At this time, one end of the second electrode 15 is exposed to the outside of the sensing unit 11 in the axial direction, and bumps are formed at the exposed end of the second electrode 15 to form the flip-chip electrode 173 . configurable.
  • FIG. 3 is a schematic diagram illustrating a state in which three-dimensional fingerprint information is acquired through a fingerprint mapping process of the sensor die 10 according to an embodiment of the present invention.
  • the sensor die 10 is packaged on a PCB ultrasonic sensor substrate, and a pulse voltage is applied from the controller.
  • the pulse voltage is applied to the soldered flip-chip electrode 17 to form a voltage difference in the nanorods 100 .
  • the nanorods 100 emit ultrasonic waves toward the user's fingerprint 3 by a piezoelectric effect.
  • a parallax is formed when the ultrasonic waves reflected from the user's fingerprint 3 reach the nanorods 100 according to the height difference between the valleys or the peaks of the fingerprint 3 .
  • the nanorod 100 that has received the ultrasonic wave reflected from the fingerprint 3 generates a pulse signal with an inverse piezoelectric effect and outputs it to the controller of the PCB ultrasonic sensor substrate.
  • the control unit calculates height information of the fingerprint 3 based on the parallax and intensity of the output pulse signal.
  • the nanorods 100 are manufactured by using a conductive substrate to be etched with the flip chip electrode 17 as a mold as a mold.
  • the method for manufacturing the sensor die 10 includes a conductive mold generation step, a nanorod generation step, a side electrode generation display step, a conductive mold etching step, an insulating material filling step, a lower electrode forming step, a dummy substrate bonding step, and an upper electrode forming step. may include steps.
  • a plurality of rod generation holes spaced apart from each other by etching the conductive substrate are generated.
  • the nanorods 100 are created by filling the plurality of rod generating holes with a nano piezoelectric material.
  • the step of displaying the side electrode generating unit is a step of marking the position of the side electrode on the edge of the conductive mold on one side of the rod generating hole.
  • the side electrode may be the flip-chip electrode 17 described above.
  • the remaining conductive molds are first etched to generate nanorods and side electrodes, except for the nanorods, the marked side electrode generating part, and the conductive substrate base connecting them.
  • the insulating material filling step the insulating material is filled in the portion etched through the conductive mold etching step.
  • the lower electrode forming step secondary etching is performed so that one end of the nanorod and the side electrode surrounded by the insulating material is exposed by filling the insulating material, and a lower electrode is formed at one end of the exposed nanorod and the side electrode.
  • the dummy substrate is adhered to the surface on which the lower electrode is formed.
  • the dummy substrate may be the above-described base plate 19 .
  • the upper electrode is formed at the other end of the exposed nanorod and the side electrode by removing the conductive substrate base connecting the nanorod and the side electrode.
  • the manufacturing process of the sensing unit 11 using the conductive mold according to the embodiment of FIG. 4 is a completely different approach from the conventional MEMS process, and the substrate is etched through a photolithography method to fabricate a nanorod based on a mold.
  • FIG. 5 shows a top view of a sensor die according to another embodiment of the present invention.
  • the sensor die 10 includes a sensing unit 11 in which a plurality of nanorods 100 having a piezoelectric effect are arrayed to detect a user's fingerprint; a first electrode 13 that is in electrical contact with the nanorod 100 along a line in the first axial direction of the nanorod 100 to form one surface of the sensing unit 11; a second electrode 15 that is in electrical contact with the nanorod 100 along a line in the second axial direction of the nanorod 100 to configure the other surface of the sensing unit 11; a first flip-chip electrode 171 that is in electrical contact with one end of the first electrode 13 and integrally distributes an electrical signal to the nanorods 100 positioned in a line in the first axial direction; and a second flip-chip electrode 173 that is in electrical contact with one end of the second electrode 15 and integrally distributes an electrical signal to the nanorods 100 positioned in a line in the second axis direction.
  • the sensing unit 11 and the flip-chip electrode 17 are the same as those described above in the embodiments of FIGS. 1 to 4 , and overlapping references are omitted.
  • the structure of the first and second electrodes 13 and 15 for flexibility is presented.
  • the sensor die 10 has a pillar-type structure in which both the nanorods 100 and the flip-chip electrodes 171 have a micro or nano-scale thickness.
  • both the nanorods 100 and the flip-chip electrodes 171 have a micro or nano-scale thickness.
  • the nanorods 100 are arrayed at a fine pitch interval and a known flexible insulating material is filled between the pitches, there is no problem in the flexibility of the nanorods 100 and the flip chip electrode 171 .
  • the ultrasonic sensor module according to the present embodiment has a structure in which the electrodes 13 and 15 are coupled to the upper and lower surfaces of the nanorods 100 in different axes. In the embodiment of FIG. 1 , it is difficult to form flexibility due to the structure of the electrodes 13 and 15 stacked on the top and bottom of the nanorod 100 .
  • the first electrode 13 or the second electrode 15 of the present embodiment is provided in a twisted shape in which a line extending along an axis in electrical contact with the nanorod 100 imparts a predetermined elasticity in the axial direction.
  • the twisted shape of the electrode referred to in this specification refers to a serpentine or zigzag shape.
  • the first electrode 13 or the second electrode 15 can be easily manufactured because the line width and shape can be freely changed during the forming process after the mold is etched.
  • the sensor die 10 according to the present embodiment does not necessarily require the user's fingerprint 3 to come into contact with the sensing unit 11 according to the three-dimensional ultrasonic sensing principle.
  • the sensor die 10 may be installed to be buried under various devices and displays requiring security. In addition, as flexible displays and devices have recently diversified, it is desirable that the ultrasonic sensor be implemented to ensure flexibility.
  • the sensing unit 11 is not provided in a plate shape, but as an array of fine nanorods, and the stacked electrode structure also has a predetermined elasticity, so it can be applied to a flexible device. .
  • FIG 6 shows an ultrasonic sensor 1 according to an embodiment of the present invention.
  • the ultrasonic sensor 1 may be manufactured by flip-chip bonding the sensor die 10 described above in FIGS. 1 to 5 to the ultrasonic sensor substrate 30 .
  • the detailed configuration of the sensor die 10 omits the use of overlapping bar as described above.
  • the ultrasonic sensor substrate 10 is a circuit board to which the sensor die 10 is bonded, and the solder balls 31 are formed at the positions of the flip-chip electrodes 171 and 173 of the sensor die 10 and include the control unit 50 .
  • the solder ball 31 is formed at one end or the other end of the first axis in the line in the first axis direction of the nanorod 100 .
  • the solder ball 31 is formed at one end or the other end of the second axis in the line in the second axis direction of the nanorod 100 .
  • solder ball 31 is a terminal of the substrate that is in electrical contact with the first flip-chip electrode 171 or the second flip-chip electrode 173 , the arrangement of the solder ball 31 is the same as the arrangement of the flip-chip electrode 17 described above. same. Accordingly, the solder balls 31 are alternately arranged in adjacent arrays. This is because the first flip-chip electrode 171 or the second flip-chip electrode 173 are alternately disposed at one end or the other end based on the same axis.
  • solder balls 31 are arranged in a zigzag with respect to the arrayed axis.
  • the solder balls 31 formed on one end or the other end of the first axis are arranged in the second axis direction.
  • the solder balls 31 adjacent to each other in the second axial direction become the second spaced solder balls 31 due to the above-described misalignment relationship.
  • the positions of the solder balls 31 arranged in the second axis direction are also arranged in a zigzag manner. Accordingly, each of the solder balls 31 has a sufficient print area.
  • the ultrasonic sensor substrate 30 is connected to the contact point of the solder ball 31 , and may be a PCB substrate on which a circuit pattern is designed and printed in consideration of element arrangement.
  • the control unit 50 may be configured as a module on the PCB substrate of this embodiment.
  • the control unit 50 calculates the position of the nanorods 100 of the ultrasonic signal transmitted and received by the coordinate combination of the solder ball 31 formed in the first axis direction line and the solder ball 31 formed in the second axis direction line. there is.
  • the controller 50 may control an applied voltage for driving the nanorods 100 .
  • the controller 50 may apply a pulse voltage for driving the piezoelectric element in the form of a clock.
  • the control unit 50 sets the duty ratio including a delay time in consideration of the time until a predetermined electrical signal is applied from the nanorod 100 after the pulse voltage of the clock signal is applied. can be set.
  • the controller 50 may consider an electrical signal returned after a predetermined time (in ⁇ m unit) after application of the pulse voltage as an output signal for fingerprint mapping.
  • the control unit 50 may include a first operation module 501 and a second operation module 503 .
  • the first operation module 501 may calculate the position P of the nanorods 100 as the axial intersection between the solder ball x of the first axis and the solder ball y of the second axis.
  • all of the nanorods 100 of the sensing unit 11 transmit ultrasonic waves when a pulse voltage is applied to receive ultrasonic waves reflected at different times.
  • the time of the received ultrasound is determined from the depth information of the valleys and ridges of the fingerprint.
  • a pulse voltage is again output through the solder ball 31 .
  • the corresponding signal may be specified as being the nanorod 100 located at the p point.
  • the nanorod 100 located at the p point may be set to coordinates (x,y).
  • the second operation module 503 maps the height (z-axis) information of the valleys or ridges of the fingerprint by using the ultrasound signal received at the position coordinates (x, y) of the nanorods 100 of the first operation module 501 . can do.
  • the received ultrasonic signal may be an electrical signal formed as mechanical displacement is generated in the nanorods 100 by reflected ultrasonic waves.
  • the height (z-axis) information of the valleys or ridges of the fingerprint may be calculated from the information of the electrical signal.
  • the second operation module 503 may calculate the z-axis information by measuring the time difference of the electrical signal received through the solder ball 31 .
  • This embodiment is another embodiment, and by applying a more complex algorithm, the strength of the electrical signal or the use of voltage or current information is not limited.
  • control unit 50 may construct 3D fingerprint information of (x, y, z).
  • the control unit 50 forms three-dimensional fingerprint data as a result of the first operation module 501 and the second operation module 503 , and may be provided as a security verification means capable of recognizing a fingerprint even in a non-contact state.
  • the packaging of the ultrasonic sensor is easy, the fingerprint is detected in a 3D non-contact method, and it can be implemented by being inserted as an under-display in various devices such as monitors and smart phone terminals.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Image Input (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

La présente invention concerne un capteur ultrasonore comprenant : une puce de capteur comprenant une unité de détection dans laquelle une pluralité de nanotiges présentant un effet piézoélectrique sont agencées en réseau afin de détecter une empreinte digitale d'utilisateur, une première électrode en contact électrique avec les nanotiges le long d'une ligne des nanotiges dans une première direction axiale de façon à former une surface de l'unité de détection, une seconde électrode en contact électrique avec les nanotiges le long d'une ligne des nanotiges dans une seconde direction axiale de façon à former l'autre surface de l'unité de détection, une première électrode à puce retournée en contact électrique avec une extrémité de la première électrode de façon à distribuer d'un seul tenant un signal électrique aux nanotiges situées dans la ligne dans la première direction axiale, et une seconde électrode à puce retournée en contact électrique avec une extrémité de la seconde électrode de façon à distribuer d'un seul tenant un signal électrique aux nanotiges situées dans la ligne dans la seconde direction axiale ; et un substrat de capteur ultrasonore doté de billes de soudure formées à une extrémité ou à l'autre extrémité du premier axe dans la ligne dans la première direction axiale des nanotiges en réseau de façon à être en contact avec la première électrode à puce retournée, et de billes de soudure formées à une extrémité ou à l'autre extrémité du second axe dans la ligne dans la seconde direction axiale des nanotiges de façon à être en contact avec la seconde électrode à puce retournée, les billes de soudure liées à la puce de capteur étant disposées en un nombre inférieur ou égal à la moitié du nombre des nanotiges en réseau, la puce de capteur étant une puce retournée liée au substrat de capteur ultrasonore.
PCT/KR2021/012966 2020-09-28 2021-09-23 Capteur ultrasonore permettant l'établissement d'informations d'empreintes digitales tridimensionnelles WO2022065881A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2020-0125803 2020-09-28
KR1020200125803A KR102445831B1 (ko) 2020-09-28 2020-09-28 3차원의 지문정보를 구축하는 초음파 센서 및 초음파 센서 기판
KR1020200125802A KR20220042681A (ko) 2020-09-28 2020-09-28 플립칩 방식의 패키징이 가능한 초음파 센서 다이
KR10-2020-0125802 2020-09-28

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US20200134280A1 (en) * 2018-10-24 2020-04-30 Invensense, Inc. Fingerprint Sensor
KR20200045844A (ko) * 2018-10-23 2020-05-06 삼성전자주식회사 변형가능한 지문 인식 소자, 이를 이용한 지문 인증 방법 및 전자 장치

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KR20010104147A (ko) * 2000-05-13 2001-11-24 윤종광 반도체용 멀티플 라인 그리드와 그의 제조 방법 및 그를이용하여 피시비 보드 상에 반도체 칩을 실장하는 방법
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KR20200045844A (ko) * 2018-10-23 2020-05-06 삼성전자주식회사 변형가능한 지문 인식 소자, 이를 이용한 지문 인증 방법 및 전자 장치
US20200134280A1 (en) * 2018-10-24 2020-04-30 Invensense, Inc. Fingerprint Sensor

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