WO2022063069A1 - Packaging structure and manufacturing method therefor, and electronic device - Google Patents

Packaging structure and manufacturing method therefor, and electronic device Download PDF

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Publication number
WO2022063069A1
WO2022063069A1 PCT/CN2021/119248 CN2021119248W WO2022063069A1 WO 2022063069 A1 WO2022063069 A1 WO 2022063069A1 CN 2021119248 W CN2021119248 W CN 2021119248W WO 2022063069 A1 WO2022063069 A1 WO 2022063069A1
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Prior art keywords
redistribution layer
chip
chip module
substrate
cavity
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PCT/CN2021/119248
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French (fr)
Chinese (zh)
Inventor
杨望来
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维沃移动通信有限公司
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Publication of WO2022063069A1 publication Critical patent/WO2022063069A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19Manufacturing methods of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895Local interconnects; Local pads, as exemplified by patent document EP0896365
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73267Layer and HDI connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Definitions

  • the application belongs to the technical field of semiconductor packaging, and in particular relates to a packaging structure, a manufacturing method thereof, and an electronic device.
  • POP Package on Package
  • the chips are packaged between two substrates, and the different substrates need to be electrically connected and fixed by solder balls. Therefore, there will be multi-layer substrates and multi-layer solder balls in the thickness direction of the package structure. This will lead to a larger thickness and size of the entire package structure, which is not conducive to the thin and light design of electronic devices; the above-mentioned problems are more prominent when the chip itself has an excessively high capacity.
  • the purpose of the embodiments of the present application is to provide a package structure, a manufacturing method thereof, and an electronic device, which can solve the problem of large thickness and size of the current package structure.
  • an embodiment of the present application provides a package structure, and the package structure includes:
  • the substrate has a first surface, a second surface and a cavity, the first surface and the second surface are arranged opposite to each other, and the cavity penetrates the first surface;
  • the first chip module is disposed in the cavity
  • the first redistribution layer is disposed on the first surface and covers the cavity;
  • the second redistribution layer is disposed on the second surface and is electrically connected to the first redistribution layer;
  • the second chip module is disposed on the second redistribution layer
  • the first chip module is electrically connected to at least one of the first redistribution layer and the second redistribution layer
  • the second chip module is electrically connected to the second redistribution layer
  • an embodiment of the present application provides an electronic device including the aforementioned packaging structure.
  • an embodiment of the present application provides a method for fabricating a package structure, including:
  • a first redistribution layer is stacked and combined on the first surface of the substrate, and the cavity is covered by the first redistribution layer;
  • a second chip module is provided, and the second chip module is placed on the second redistribution layer.
  • the first chip module is disposed in the cavity of the substrate, the first surface of the substrate is disposed with the first redistribution layer, and the second surface of the substrate is disposed with the second redistribution layer,
  • the second chip module is disposed on the second redistribution layer and the second redistribution layer is used as a carrier; at the same time, the first redistribution layer and the second redistribution layer are electrically connected, so the first redistribution layer is installed in the installation After the foundation, the normal use of the entire package structure can be realized.
  • the electronic module can be realized by using only one substrate.
  • the stacking package of components avoids the use of too many substrates and solder balls, which can undoubtedly reduce the thickness of the entire package structure and simplify the overall structure.
  • FIG. 1 is a schematic structural diagram of a first packaging structure disclosed in an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of a second packaging structure disclosed in an embodiment of the present application.
  • 3 to 5 show the steps of manufacturing the package structure in FIG. 1 .
  • 500-second chip module, 600-molding part, 700-electrical connection part 500-second chip module, 600-molding part, 700-electrical connection part.
  • an embodiment of the present application discloses a package structure.
  • the disclosed package structure includes a substrate 100 , a first chip module 200 , a second chip module 500 , a first redistribution layer 300 and a second Redistribution layer 400 .
  • the substrate 100 is the basic component of the package structure, which directly or indirectly provides a mounting support foundation for other components of the package structure.
  • a cavity 110 is formed on the substrate 100 , the first chip module 200 is disposed in the cavity 110 , and the cavity 110 provides an accommodation space for the first chip module 200 .
  • the cavity 110 may have various shapes, such as circular, rectangular, square, etc., which are not limited in this embodiment; since the chip structure is generally rectangular or square, the cavity 110 can be selected as A rectangular or square cavity, of course, when the first chip module 200 includes a wafer structure, a circular cavity can be selected to suit its shape; the above-mentioned adaptation arrangement can undoubtedly improve the space utilization and compactness of the substrate 100 sex.
  • the material types of the substrate 100 can be various, such as germanium, silicon carbide, gallium nitride, etc.
  • the substrate 100 is usually selected as a silicon substrate, because silicon is stable in properties, easy to purify, and has a huge storage capacity. more accessible.
  • the substrate 100 has a first surface 130 and a second surface 140 disposed opposite to each other.
  • the aforementioned cavity 110 may be opened on the first surface 130 of the substrate 100 , that is, the cavity 110 penetrates through the first surface 130 .
  • the first surface 130 may be any end surface of the substrate 100 .
  • the first redistribution layer 300 and the second redistribution layer 400 are connection mounting members of the package structure. It should be noted that, in the production process of the chip structure, its I/O interface (usually a pad) is small, which is inconvenient to realize electrical connection, and the structure of the chip structure itself is also inconvenient to realize fixed installation; in this embodiment , the first redistribution layer 300 and the second redistribution layer 400 are used to solve the above problems.
  • the first redistribution layer 300 is disposed on the first surface 130 and covers the cavity 110, so that the cavity 110 is sealed, that is, the first chip module 200 is isolated from the outside world, and impurities can be prevented Enter into the cavity 110 and cause corrosion to the first chip module 200 .
  • the second redistribution layer 400 is disposed on the second surface 140
  • the second chip module 500 is disposed on the second redistribution layer 400
  • the second chip module 500 is disposed on the second redistribution layer 400 away from the substrate 100 . side.
  • the package structure realizes the stacking of multiple chip structures (ie, the first chip module 200 and the second chip module 500 ), thereby improving the integration density of electronic components.
  • the first chip module 200 is electrically connected to at least one of the first redistribution layer 300 and the second redistribution layer 400 , that is, the first chip module 200 may only be connected to the first redistribution layer 300 and the second redistribution layer 400 .
  • the first redistribution layer 300 can be electrically connected to the second redistribution layer 400 only, and can also be electrically connected to the first redistribution layer 300 and the second redistribution layer 400 at the same time; the second chip module 500 is electrically connected to the second redistribution layer 400.
  • the two redistribution layers 400 are electrically connected.
  • the first redistribution layer 300 and the second redistribution layer 400 are both metal conductive layers in essence, and have a larger area than the chip structure. Therefore, through the first redistribution layer 300
  • the circuit fan-out of the first chip module 200 can be radiated to a larger area, and a larger I/O interface corresponding to the first chip module 200 can be provided on the first redistribution layer 300 (of course, in the In this embodiment, the first chip module 200 can also achieve the above effects based on the second redistribution layer 400 );
  • the circuit fan-out of the second chip module 500 can be radiated to a larger area through the second redistribution layer 400 , and a larger I/O interface corresponding to the second chip module 500 can be disposed on the second redistribution layer 400 .
  • the reliable and stable fixed installation and telecommunication connection of the first chip module 200 and the second chip module 500 can be realized, and the packaging is also improved.
  • the I/O interface density of the structure makes the installation more convenient.
  • the second redistribution layer 400 is electrically connected to the first redistribution layer 300 .
  • the second chip module 500 can realize information interaction with the first redistribution layer 300 through the second redistribution layer 400
  • the first chip module 200 can also realize information interaction with the first redistribution layer 300 , so the logic and information arrays in the longitudinal direction of the package structure can be combined.
  • there is no restriction on the electrical connection manner of each component which can usually be realized by setting pins, solder balls, or bonding wires.
  • the package structure needs to seal the second chip module 500 .
  • the package structure of this embodiment may further include a molding part 600 , and the molding part 600 covers the second chip module 500 and the second redistribution layer 400 .
  • the second chip module 500 is isolated from the outside world, which can prevent impurities from contacting the second chip module 500 and causing corrosion.
  • the mold sealing part 600 protects the second chip module 500 , it also plays a protective role for the second redistribution layer 400 .
  • the molding part 600 may be made of a silicone-based material, a thermosetting material, a thermoplastic material, or a UV-treated material.
  • the molding part 600 can be made of a thermosetting material, such as silica gel, epoxy resin, polyimide, and the like.
  • the package structure can be connected to the installation base on the side of the first redistribution layer 300, and the installation base can be a main board or a sub-board of an electronic device. In this way, the package structure can be connected to other Electronic components make connections.
  • the first redistribution layer 300 is usually electrically connected to the mounting base through electrical connection parts 700 , which may be solder balls, pins, or the like.
  • the specific types of the first chip module 200 and the second chip module 500 are not limited, and they can be chip structures of the same functional type, so that the package structure can have the same function. They have more powerful computing power; they can also be chip structures of different functional types, so that a single package structure can achieve more functions. When applied to electronic devices, it is reflected that the electronic devices have more functions. .
  • this embodiment does not limit the specific number of chip structures inside the first chip module 200 and the second chip module 500, and they may include only one chip structure or multiple chip structures; In the implementation of multiple chip structures, it is only necessary to adaptively stack multiple chip structures in the cavity 110 and the second redistribution layer 400, and the adaptive accommodation can also be realized by changing the size of the chip structures; for example, In the package structure shown in FIG. 1 , the first chip module 200 includes two chip structures; in the package structure shown in FIG. 2 , the first chip module 200 only includes one chip structure; and the above two packages In the structure, each of the second chip modules 500 includes two chip structures.
  • the specific number of the cavities 110 is not limited, that is, a plurality of cavities 110 can be opened on the substrate 100, and the first chip modules 200 are respectively arranged in the plurality of cavities 110, This enables the integration of more chip structures.
  • the package structure may further include more chip modules, and these part of the chip modules may be disposed on the second chip module 500 away from the second redistribution layer 400 side, and can be set adaptively through the inventive concept of the present application.
  • the first chip module 200 is disposed in the cavity 110 of the substrate 100 , the first redistribution layer 300 is disposed on the first surface 130 of the substrate 100 , and the substrate 100
  • the second surface 140 of the chip is provided with a second redistribution layer 400, the second chip module 500 is disposed on the second redistribution layer 400 and the second redistribution layer 400 is used as a supporting carrier; at the same time, the first redistribution layer 300 and The second redistribution layer 400 is electrically connected, so after the first redistribution layer 300 is installed on the mounting base, the entire package structure can be used normally.
  • the electronic module can be realized by using only one substrate.
  • the stacking package of components avoids the use of too many substrates and solder balls, and at the same time, the thicknesses of the first redistribution layer 300 and the second redistribution layer 400 are both small, which can undoubtedly reduce the thickness of the entire package structure and reduce the size of the package.
  • the overall structure of the package structure is simplified.
  • the cavity 110 penetrates through the second surface 140 , and the second redistribution layer 400 covers the cavity 110 .
  • the first chip module 200 can be exposed to the side of the substrate 100 close to the second redistribution layer 400 through the cavity 110 , and the size of the first chip module 200 is kept unchanged. Therefore, the size of the cavity 110 can undoubtedly be reduced, that is, the substrate 100 can be thinned in the thickness direction thereof, thereby realizing the thinning of the overall thickness of the package structure.
  • the specific number of chip structures inside the first chip module 200 is not limited.
  • the first chip module 200 may include a first chip 210 and a second chip 220 that are stacked and arranged.
  • the first chip 210 faces the first redistribution layer 300 and is connected to the first redistribution layer 300 .
  • the first redistribution layer 300 is electrically connected
  • the second chip 220 faces the second redistribution layer 400 and is electrically connected to the second redistribution layer 400 .
  • the information transmission path between the first chip 210 and the second chip 220 can undoubtedly be shortened, and a higher information exchange efficiency can be achieved at a lower cost;
  • the electrical connection of the first redistribution layer 300 and the electrical connection of the second chip 220 to the second redistribution layer 400 also facilitates processing operations.
  • the first chip 210 and the second chip 220 can be fixedly connected through an adhesive layer 230, and the adhesive layer 230 can be specifically a die-bonding film. Based on the adhesive layer 230, the first chip 210 and the second chip 220 can have a certain integrity, which is convenient for installation and fixation; at the same time, even when the first chip 210 and the second chip 220 are pressed, the The first chip 210 and the second chip 220 function as flexibility, which can avoid damage to the first chip 210 and the second chip 220 .
  • the cavity 110 may be arranged to penetrate through the substrate 100, and in order to achieve the above-mentioned technical features, the second surface 140 of the substrate 100 may be thinned by technical means; during the thinning process , due to the risk of damage to the second chip 220 due to contact, in an optional solution, the second chip 220 may be provided with conductive bumps 221 on the end face facing the second redistribution layer 400, and the second chip 220 passes through the conductive bumps 221 is electrically connected to the second redistribution layer 400 .
  • the end surface of the second chip 220 facing the second redistribution layer 400 is provided with the conductive bumps 221 , when the second surface 140 of the substrate 100 is thinned, even if it is thinned into the cavity 110 , The conductive bumps 221 can prevent the thinning of the second chip 220, which is equivalent to protecting the second chip 220, and can instantly remind the operator that the thinning is in place, and the operator can stop thinning the substrate 100 again.
  • the conductive bumps 221 also have electrical conductivity, which can easily realize the electrical connection between the second chip 220 and the second redistribution layer 400; moreover, because the conductive bumps 211 play a role of spacing, it can also increase the air flow space , to improve the heat dissipation efficiency inside the package structure.
  • the connection stability between the two can be improved.
  • the gap of the cavity 110 outside the first chip module 200 can be filled with molding material to prevent the first chip module 200 from being displaced or moved, thereby improving the installation stability.
  • an electrical connection relationship needs to be established between the first redistribution layer 300 and the second redistribution layer 400 , and in the stacked package, the thickness direction is carried out by conventional methods (eg, wire bonding, solder balls, etc.).
  • the electrical connection on the package structure will undoubtedly increase the thickness and size of the package structure.
  • through silicon vias 120 are formed on the substrate 100 , and the first redistribution layer 300 is electrically connected to the second redistribution layer 400 through the silicon vias 120 .
  • the TSV 120 in order to make the TSV 120 have electrical conductivity, it is usually necessary to fill the TSV 120 with a conductive material, such as copper, polysilicon, tungsten and other substances.
  • a conductive material such as copper, polysilicon, tungsten and other substances.
  • the first redistribution layer 300 and the second redistribution layer 400 since the TSV 120 is embedded in the substrate 100 , the first redistribution layer 300 and the second redistribution layer 400 only need to be electrically connected to the TSV 120 , respectively, to ensure that the first redistribution layer 300 and the second redistribution layer 400 are electrically connected to the TSV 120 respectively.
  • the second redistribution layer 400 implements an electrical connection relationship across the substrate 100 .
  • the package structure can avoid using a traditional electrical connection structure, thereby improving its space utilization.
  • the TSV 120 can shorten the gap between the first redistribution layer 300 and the second redistribution layer 400 the information transmission path, thereby improving the information exchange efficiency of the
  • an embodiment of the present application further discloses an electronic device, and the disclosed electronic device includes the aforementioned packaging structure.
  • the electronic devices disclosed in the embodiments of the present application may be devices such as smart phones, tablet computers, e-book readers, and wearable devices, and the embodiments of the present application do not limit the specific types of electronic devices.
  • the embodiment of the present application also discloses a manufacturing method of a package structure, and the disclosed manufacturing method may include:
  • Step S100 the substrate 100 is provided, and the cavity 110 is formed on the first surface 130 of the substrate 100 .
  • the cavity 110 there are various specific ways to construct the cavity 110 , for example, through CNC processing, molding processing, and the like.
  • Step S200 providing the first chip module 200 , and disposing the first chip module 200 in the cavity 110 .
  • step S200 may include:
  • Step S210 providing the second chip 220 , constructing conductive bumps 221 on the end surface of the second chip 220 facing the cavity 110 , and disposing the second chip 220 in the cavity 110 ;
  • Step S220 providing the first chip 210 and bonding the first chip 210 to the end surface of the second chip 220 facing outside the cavity 110 ;
  • Step S230 Provide an encapsulation molding material, and fill the cavity 110 with the encapsulation molding material.
  • Step S300 stacking and combining the first redistribution layer 300 on the first surface 130 of the substrate 100 , and covering the cavity 110 with the first redistribution layer 300 .
  • Step S300 specifically further includes electrically connecting the first chip 210 with the first redistribution layer 300 .
  • Step S400 stacking and combining the second redistribution layer 400 on the second surface 140 of the substrate 100 , and electrically connecting the second redistribution layer 400 and the first redistribution layer 300 .
  • step S400 may include:
  • Step S410 performing a thinning process on the second surface 140 of the substrate 100 so that the cavity 110 penetrates through the substrate. In this way, the first chip module 200 is exposed outside the substrate 100 .
  • the specific type of the thinning process is not limited.
  • the thinning can be achieved by a mechanical grinding process, and of course, it can also be achieved by chemical etching, mechanical glass, thermal baking, ultraviolet light irradiation, and laser ablation. , chemical mechanical polishing or wet peeling to achieve thinning.
  • Step S420 constructing through silicon vias 120 on the substrate 100 , it should be understood that the silicon vias 120 should penetrate through the substrate 100 , that is, from the first surface 130 of the substrate 100 to the second surface 140 ;
  • the second redistribution layer 400 is stacked and assembled on the second surface 140 of the thinned substrate 100 , and the second redistribution layer 400 is electrically connected to the first redistribution layer 300 through the TSV 120 .
  • Step S420 specifically further includes electrically connecting the second chip 220 with the second redistribution layer 400 . More specifically, the second chip 220 is electrically connected to the second redistribution layer 400 through the conductive bumps 221 .
  • Step S500 providing the second chip module 500 , and disposing the second chip module 500 on the second redistribution layer 400 .
  • Step S500 specifically further includes electrically connecting the second chip module 500 and the second redistribution layer 400 .
  • Step S500 may further include providing an encapsulation molding material, and using the encapsulation molding material to construct the molding part 600 covering the second chip module 500 and the second redistribution layer 400 .
  • mold sealing portion 600 there are various methods for constructing the mold sealing portion 600, such as compression molding, printing, transfer molding, liquid sealing molding, vacuum pressing, and spin coating.
  • the manufacturing method of the package structure may further include step S600 : constructing an electrical connection portion 700 on a side of the first redistribution layer 300 away from the substrate 100 . In actual use, it can be installed and connected to the installation foundation through the electrical connection part 700 .

Abstract

Disclosed in the present application are a packaging structure and a manufacturing method therefor, and an electronic device. The disclosed packaging structure comprises a substrate, a first chip module, a second chip module, a first redistribution layer, and a second redistribution layer; the substrate has a first surface and a second surface that face away from each other and a cavity, the first surface and the second surface are arranged facing away from each other, and the cavity penetrates the first surface; the first chip module is arranged in the cavity; the first redistribution layer is arranged on the first surface and covers the cavity; the second redistribution layer is arranged on the second surface and electrically connected to the first redistribution layer; the second chip module is arranged on the second redistribution layer; and the first chip module is electrically connected to at least one of the first redistribution layer and the second redistribution layer, and the second chip module is electrically connected to the second redistribution layer.

Description

封装结构及其制作方法和电子设备Package structure and its manufacturing method and electronic device
本申请要求2020年09月22日提交在中国专利局、申请号为202011001467.X、发明名称为“封装结构及其制作方法和电子设备”的中国专利申请的优先权,该申请的全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application with the application number 202011001467.X and the invention title "Package structure and its manufacturing method and electronic device" filed in the China Patent Office on September 22, 2020. The entire content of the application is approved by Reference is incorporated in this application.
技术领域technical field
本申请属于半导体封装技术领域,具体涉及一种封装结构及其制作方法和电子设备。The application belongs to the technical field of semiconductor packaging, and in particular relates to a packaging structure, a manufacturing method thereof, and an electronic device.
背景技术Background technique
随着科技的进步,在提升电子元件的功能表现的基础上对电子元件的小型化尺寸特征也提出了更高的要求,目前,通常是通过提升电子元件的集成密度来实现,而堆叠型封装(Package on Package,POP)则是常用的一种提升电子元件的集成密度的手段。With the advancement of science and technology, higher requirements have also been placed on the miniaturized size characteristics of electronic components on the basis of improving the functional performance of electronic components. At present, it is usually achieved by increasing the integration density of electronic components. (Package on Package, POP) is a commonly used method to improve the integration density of electronic components.
在POP封装结构中,芯片均封装于两块基板之间,且不同基板之间需要通过锡球实现电连接和固定,因此在封装结构的厚度方向上会存在多层基板、多层锡球,进而会导致整个封装结构厚度尺寸较大,而不利于电子设备的轻薄化设计;当存在芯片自身容量过高的情况时,上述问题更为凸显。In the POP package structure, the chips are packaged between two substrates, and the different substrates need to be electrically connected and fixed by solder balls. Therefore, there will be multi-layer substrates and multi-layer solder balls in the thickness direction of the package structure. This will lead to a larger thickness and size of the entire package structure, which is not conducive to the thin and light design of electronic devices; the above-mentioned problems are more prominent when the chip itself has an excessively high capacity.
发明内容SUMMARY OF THE INVENTION
本申请实施例的目的是提供一种封装结构及其制作方法和电子设备,能够解决目前的封装结构厚度尺寸较大的问题。The purpose of the embodiments of the present application is to provide a package structure, a manufacturing method thereof, and an electronic device, which can solve the problem of large thickness and size of the current package structure.
为了解决上述技术问题,本申请是这样实现的:In order to solve the above technical problems, this application is implemented as follows:
第一方面,本申请实施例提供了一种封装结构,该封装结构包括:In a first aspect, an embodiment of the present application provides a package structure, and the package structure includes:
基板,所述基板具有第一表面、第二表面和空腔,所述第一表面和所述第二表面相背设置,所述空腔贯通所述第一表面;a substrate, the substrate has a first surface, a second surface and a cavity, the first surface and the second surface are arranged opposite to each other, and the cavity penetrates the first surface;
第一芯片模组,所述第一芯片模组设置于所述空腔;a first chip module, the first chip module is disposed in the cavity;
第一再分布层,所述第一再分布层设置于所述第一表面,且覆盖所述空腔;a first redistribution layer, the first redistribution layer is disposed on the first surface and covers the cavity;
第二再分布层,所述第二再分布层设置于所述第二表面,且与所述第一再分布层电连接;a second redistribution layer, the second redistribution layer is disposed on the second surface and is electrically connected to the first redistribution layer;
第二芯片模组,所述第二芯片模组设置于所述第二再分布层;a second chip module, the second chip module is disposed on the second redistribution layer;
其中,所述第一芯片模组与所述第一再分布层和所述第二再分布层的至少一者电连接,所述第二芯片模组与所述第二再分布层电连接。Wherein, the first chip module is electrically connected to at least one of the first redistribution layer and the second redistribution layer, and the second chip module is electrically connected to the second redistribution layer.
第二方面,本申请实施例提供了一种电子设备,该电子设备包括前述的封装结构。In a second aspect, an embodiment of the present application provides an electronic device including the aforementioned packaging structure.
第三方面,本申请实施例提供了一种封装结构的制作方法,包括:In a third aspect, an embodiment of the present application provides a method for fabricating a package structure, including:
提供基板,在所述基板的第一表面构造空腔;providing a substrate with a cavity formed in a first surface of the substrate;
提供第一芯片模组,将所述第一芯片模组放置于所述空腔中;providing a first chip module, and placing the first chip module in the cavity;
在所述基板的第一表面层叠组合第一再分布层,并通过所述第一再分布层覆盖所述空腔;A first redistribution layer is stacked and combined on the first surface of the substrate, and the cavity is covered by the first redistribution layer;
在所述基板的第二表面层叠组合第二再分布层,并将所述第二再分布层与所述第一再分布层电连接;Laminate and combine a second redistribution layer on the second surface of the substrate, and electrically connect the second redistribution layer to the first redistribution layer;
提供第二芯片模组,将所述第二芯片模组放置于所述第二再分布层。A second chip module is provided, and the second chip module is placed on the second redistribution layer.
在本申请实施例所公开的封装结构中,第一芯片模组设置于基板的空腔,基板的第一表面设置有第一再分布层,基板的第二表面设置有第二再分布层,第二芯片模组设置于第二再分布层上而以第二再分布层作为设置载体;同时,第一再分布层和第二再分布层电连接,因此通过第一再分布层安装于安装基础上后,即可实现整个封装结构的正常使用。In the package structure disclosed in the embodiments of the present application, the first chip module is disposed in the cavity of the substrate, the first surface of the substrate is disposed with the first redistribution layer, and the second surface of the substrate is disposed with the second redistribution layer, The second chip module is disposed on the second redistribution layer and the second redistribution layer is used as a carrier; at the same time, the first redistribution layer and the second redistribution layer are electrically connected, so the first redistribution layer is installed in the installation After the foundation, the normal use of the entire package structure can be realized.
相较于现有技术,本申请实施例公开的封装结构通过将第一芯片模组嵌设在基板内,并在第二再分布层设置第二芯片模组,仅仅利用一个基板就实现了电子元件的堆叠封装,避免了使用过多的基板和锡球,无疑能够减薄整个封装结构的厚度尺寸、且简化了整体结构。Compared with the prior art, in the package structure disclosed in the embodiments of the present application, by embedding the first chip module in the substrate and disposing the second chip module in the second redistribution layer, the electronic module can be realized by using only one substrate. The stacking package of components avoids the use of too many substrates and solder balls, which can undoubtedly reduce the thickness of the entire package structure and simplify the overall structure.
附图说明Description of drawings
图1为本申请实施例公开的第一种封装结构的结构示意图;FIG. 1 is a schematic structural diagram of a first packaging structure disclosed in an embodiment of the present application;
图2为本申请实施例公开的第二种封装结构的结构示意图;2 is a schematic structural diagram of a second packaging structure disclosed in an embodiment of the present application;
图3~图5示出了图1中封装结构的制作步骤。3 to 5 show the steps of manufacturing the package structure in FIG. 1 .
附图标记说明:Description of reference numbers:
100-基板、110-空腔、120-硅穿孔、130-第一表面、140-第二表面、100-substrate, 110-cavity, 120-via silicon, 130-first surface, 140-second surface,
200-第一芯片模组、210-第一芯片、220-第二芯片、221-导电凸起、230-粘接层、200-first chip module, 210-first chip, 220-second chip, 221-conductive bump, 230-adhesive layer,
300-第一再分布层、400-第二再分布层、300-first redistribution layer, 400-second redistribution layer,
500-第二芯片模组、600-模封部、700-电连接部。500-second chip module, 600-molding part, 700-electrical connection part.
具体实施方式detailed description
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.
本申请的说明书和权利要求书中的术语“第一”、“第二”等是用于区别类似的对象,而不 用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外,说明书以及权利要求中“和/或”表示所连接对象的至少其中之一,字符“/”,一般表示前后关联对象是一种“或”的关系。The terms "first", "second" and the like in the description and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It is to be understood that data so used may be interchanged under appropriate circumstances so that embodiments of the application can be practiced in sequences other than those illustrated or described herein. In addition, "and/or" in the description and claims indicates at least one of the connected objects, and the character "/" generally indicates that the associated objects are in an "or" relationship.
以下结合附图,详细说明本申请实施例公开的技术方案。The technical solutions disclosed in the embodiments of the present application will be described in detail below with reference to the accompanying drawings.
请参考图1和图2,本申请实施例公开一种封装结构,所公开的封装结构包括基板100、第一芯片模组200、第二芯片模组500、第一再分布层300和第二再分布层400。Please refer to FIG. 1 and FIG. 2 , an embodiment of the present application discloses a package structure. The disclosed package structure includes a substrate 100 , a first chip module 200 , a second chip module 500 , a first redistribution layer 300 and a second Redistribution layer 400 .
其中,基板100是封装结构的基础构件,其为封装结构的其他构件直接或者间接提供了安装支撑基础。具体地,在本实施例中,基板100上开设有空腔110,第一芯片模组200设置于空腔110中,空腔110即为第一芯片模组200提供了容纳空间。在本实施例中,空腔110的形状可以有多种,例如圆形、矩形、正方形等,本实施例对其不做限制;由于芯片结构通常为矩形或正方形,因此空腔110可选用为矩形或正方形空腔,当然第一芯片模组200包括晶圆结构时,可选用圆形空腔以适配其形状;采用上述的适配设置方式,无疑能够提升基板100的空间利用率以及紧凑性。The substrate 100 is the basic component of the package structure, which directly or indirectly provides a mounting support foundation for other components of the package structure. Specifically, in this embodiment, a cavity 110 is formed on the substrate 100 , the first chip module 200 is disposed in the cavity 110 , and the cavity 110 provides an accommodation space for the first chip module 200 . In this embodiment, the cavity 110 may have various shapes, such as circular, rectangular, square, etc., which are not limited in this embodiment; since the chip structure is generally rectangular or square, the cavity 110 can be selected as A rectangular or square cavity, of course, when the first chip module 200 includes a wafer structure, a circular cavity can be selected to suit its shape; the above-mentioned adaptation arrangement can undoubtedly improve the space utilization and compactness of the substrate 100 sex.
在本实施例中,基板100的材质类型可以有多种,例如锗、碳化硅、氮化镓等,当然,基板100通常选用为硅基板,因为硅元素性质稳定、容易提纯、储存量巨大,更易获取。In this embodiment, the material types of the substrate 100 can be various, such as germanium, silicon carbide, gallium nitride, etc. Of course, the substrate 100 is usually selected as a silicon substrate, because silicon is stable in properties, easy to purify, and has a huge storage capacity. more accessible.
基板100具有相背设置的第一表面130和第二表面140,前述的空腔110可开设在基板100的第一表面130,即空腔110贯通第一表面130。应理解的是,第一表面130可为基板100的任一端面。The substrate 100 has a first surface 130 and a second surface 140 disposed opposite to each other. The aforementioned cavity 110 may be opened on the first surface 130 of the substrate 100 , that is, the cavity 110 penetrates through the first surface 130 . It should be understood that the first surface 130 may be any end surface of the substrate 100 .
第一再分布层300和第二再分布层400是该封装结构的连接安装构件。需要说明的是,芯片结构在生产过程中,其I/O接口(通常为焊盘)较小,不便于实现电性连接,且芯片结构自身结构也不便于实现固定安装;在本实施例中,第一再分布层300和第二再分布层400即用于解决上述问题。The first redistribution layer 300 and the second redistribution layer 400 are connection mounting members of the package structure. It should be noted that, in the production process of the chip structure, its I/O interface (usually a pad) is small, which is inconvenient to realize electrical connection, and the structure of the chip structure itself is also inconvenient to realize fixed installation; in this embodiment , the first redistribution layer 300 and the second redistribution layer 400 are used to solve the above problems.
具体地,第一再分布层300设置于第一表面130,且覆盖空腔110,如此即实现对空腔110的密封,也即实现了第一芯片模组200与外界的隔离,能够防止杂质进入到空腔110中而对第一芯片模组200造成腐蚀。Specifically, the first redistribution layer 300 is disposed on the first surface 130 and covers the cavity 110, so that the cavity 110 is sealed, that is, the first chip module 200 is isolated from the outside world, and impurities can be prevented Enter into the cavity 110 and cause corrosion to the first chip module 200 .
同时,第二再分布层400设置于第二表面140,第二芯片模组500设置于第二再分布层400,当然,第二芯片模组500设置于第二再分布层400背离基板100的一侧。在此种情况下,该封装结构即实现了多个芯片结构(即第一芯片模组200和第二芯片模组500)的堆叠,进而提升了电子元件的集成密度。Meanwhile, the second redistribution layer 400 is disposed on the second surface 140 , the second chip module 500 is disposed on the second redistribution layer 400 , and of course, the second chip module 500 is disposed on the second redistribution layer 400 away from the substrate 100 . side. In this case, the package structure realizes the stacking of multiple chip structures (ie, the first chip module 200 and the second chip module 500 ), thereby improving the integration density of electronic components.
为了实现该封装结构内部的信息交互,第一芯片模组200与第一再分布层300和第二再分布层400的至少一者电连接,也即,第一芯片模组200可仅与第一再分布层300电连接,也可仅与第二再分布层400电连接,还可同时与第一再分布层300和第二再分布层400进行电连接;第二芯片模组500与第二再分布层400电连接。In order to realize the information exchange inside the package structure, the first chip module 200 is electrically connected to at least one of the first redistribution layer 300 and the second redistribution layer 400 , that is, the first chip module 200 may only be connected to the first redistribution layer 300 and the second redistribution layer 400 . The first redistribution layer 300 can be electrically connected to the second redistribution layer 400 only, and can also be electrically connected to the first redistribution layer 300 and the second redistribution layer 400 at the same time; the second chip module 500 is electrically connected to the second redistribution layer 400. The two redistribution layers 400 are electrically connected.
需要说明的是,第一再分布层300和第二再分布层400本质上均为金属导电层、且相较于芯片结构具有更大面积的走线区域,因此,通过第一再分布层300可将第一芯片模组200的电路扇出辐射至更大的面积,并可在第一再分布层300上设置有对应第一芯片模组200的较大的I/O接口(当然,在本实施例中,第一芯片模组200也可以基于第二再分布层400实现上述效果);通过第二再分布层400可将第二芯片模组500的电路扇出辐射至更大的面积,并可在第二再分布层400上设置有对应第二芯片模组500的较大的I/O接口。如此,基于第一再分布层300和第二再分布层400,就可以实现第一芯片模组200和第二芯片模组500的可靠且稳定的固定安装、电信连接,同时也提高了该封装结构的I/O接口密度,使得安装更为便捷。It should be noted that, the first redistribution layer 300 and the second redistribution layer 400 are both metal conductive layers in essence, and have a larger area than the chip structure. Therefore, through the first redistribution layer 300 The circuit fan-out of the first chip module 200 can be radiated to a larger area, and a larger I/O interface corresponding to the first chip module 200 can be provided on the first redistribution layer 300 (of course, in the In this embodiment, the first chip module 200 can also achieve the above effects based on the second redistribution layer 400 ); the circuit fan-out of the second chip module 500 can be radiated to a larger area through the second redistribution layer 400 , and a larger I/O interface corresponding to the second chip module 500 can be disposed on the second redistribution layer 400 . In this way, based on the first redistribution layer 300 and the second redistribution layer 400 , the reliable and stable fixed installation and telecommunication connection of the first chip module 200 and the second chip module 500 can be realized, and the packaging is also improved. The I/O interface density of the structure makes the installation more convenient.
与此同时,第二再分布层400与第一再分布层300电连接。如此设置下,第二芯片模组500即可通过第二再分布层400与第一再分布层300实现信息交互,同时,第一芯片模组200也可以与第一再分布层300实现信息交互,因此就可以将该封装结构纵向上的逻辑和信息阵列结合起来。在本实施例中,未对各零部件的电连接方式做出限制,通常可以通过设置引脚、锡球或打线等方式来实现。At the same time, the second redistribution layer 400 is electrically connected to the first redistribution layer 300 . Under this setting, the second chip module 500 can realize information interaction with the first redistribution layer 300 through the second redistribution layer 400 , and at the same time, the first chip module 200 can also realize information interaction with the first redistribution layer 300 , so the logic and information arrays in the longitudinal direction of the package structure can be combined. In this embodiment, there is no restriction on the electrical connection manner of each component, which can usually be realized by setting pins, solder balls, or bonding wires.
如前所述,与第一芯片模组200相同,该封装结构需要对第二芯片模组500进行密封。基于此,本实施例的封装结构还可以包括模封部600,模封部600覆盖第二芯片模组500和第二再分布层400。具体而言,基于模封部600,即实现了第二芯片模组500与外界的隔离,能够防止杂质与对第二芯片模组500接触而造成腐蚀。同时,模封部600在对第二芯片模组500进行防护时,也对第二再分布层400起到了防护作用。As mentioned above, like the first chip module 200 , the package structure needs to seal the second chip module 500 . Based on this, the package structure of this embodiment may further include a molding part 600 , and the molding part 600 covers the second chip module 500 and the second redistribution layer 400 . Specifically, based on the mold sealing portion 600 , the second chip module 500 is isolated from the outside world, which can prevent impurities from contacting the second chip module 500 and causing corrosion. At the same time, when the mold sealing part 600 protects the second chip module 500 , it also plays a protective role for the second redistribution layer 400 .
在本实施例中,模封部600可采用如硅树脂类材料、热固性材料、热塑性材料或UV处理材料等制成。通常情况下,模封部600可采用热固性材料,例如硅胶、环氧树脂、聚酰亚胺等。In this embodiment, the molding part 600 may be made of a silicone-based material, a thermosetting material, a thermoplastic material, or a UV-treated material. Generally, the molding part 600 can be made of a thermosetting material, such as silica gel, epoxy resin, polyimide, and the like.
在本实施例中,该封装结构可在第一再分布层300一侧实现与安装基础的连接,安装基础可以为电子设备的主板或副板等,如此,即能够实现该封装结构与其他的电子元件建立连接。第一再分布层300通常通过电连接部700与安装基础电连接,电连接部700可以为锡球、引脚等。In this embodiment, the package structure can be connected to the installation base on the side of the first redistribution layer 300, and the installation base can be a main board or a sub-board of an electronic device. In this way, the package structure can be connected to other Electronic components make connections. The first redistribution layer 300 is usually electrically connected to the mounting base through electrical connection parts 700 , which may be solder balls, pins, or the like.
需要说明的是,在本实施例中,未限制第一芯片模组200和第二芯片模组500的具体类型,它们可以为相同功能类型的芯片结构,如此可使得该封装结构在同一功能上具有更强大的运算能力;它们也可以为不同功能类型的芯片结构,进而可使得单个该封装结构能够实现更多的功能,当应用在电子设备上时,则体现为电子设备具备更多的功能。It should be noted that, in this embodiment, the specific types of the first chip module 200 and the second chip module 500 are not limited, and they can be chip structures of the same functional type, so that the package structure can have the same function. They have more powerful computing power; they can also be chip structures of different functional types, so that a single package structure can achieve more functions. When applied to electronic devices, it is reflected that the electronic devices have more functions. .
当然,本实施例也未限制第一芯片模组200和第二芯片模组500内部的芯片结构的具体数量,它们均可以仅包括一个芯片结构,也可以包括多个芯片结构;而在包括多个芯片结构的实施方式中,只需要将多个芯片结构在空腔110和第二再分布层400进行适应性叠置即可,也可以通过改变芯片结构尺寸大小来实现适应性容置;如图1所示出的封装结构中,第一芯片模组200包括两个芯片结构;如图2所示出的封装结构中,第一芯片模组200只包括一个芯片结构;而上述两种封装结构中,第二芯片模组500均包括两个芯片结构。Of course, this embodiment does not limit the specific number of chip structures inside the first chip module 200 and the second chip module 500, and they may include only one chip structure or multiple chip structures; In the implementation of multiple chip structures, it is only necessary to adaptively stack multiple chip structures in the cavity 110 and the second redistribution layer 400, and the adaptive accommodation can also be realized by changing the size of the chip structures; for example, In the package structure shown in FIG. 1 , the first chip module 200 includes two chip structures; in the package structure shown in FIG. 2 , the first chip module 200 only includes one chip structure; and the above two packages In the structure, each of the second chip modules 500 includes two chip structures.
同时,在本实施例中,也未限制空腔110的具体数量,也即,在基板100上可以开设多个空腔110,而在多个空腔110中分别设置第一芯片模组200,如此便可实现更多芯片结构的集成。进一步地,在为了提升该封装结构的集成度的实施方式中,该封装结构还可以包括更多的芯片模组,这部分芯片模组可设置在第二芯片模组500背离第二再分布层400一侧,并通过本申请发明构思进行适应性设置即可。Meanwhile, in this embodiment, the specific number of the cavities 110 is not limited, that is, a plurality of cavities 110 can be opened on the substrate 100, and the first chip modules 200 are respectively arranged in the plurality of cavities 110, This enables the integration of more chip structures. Further, in order to improve the integration degree of the package structure, the package structure may further include more chip modules, and these part of the chip modules may be disposed on the second chip module 500 away from the second redistribution layer 400 side, and can be set adaptively through the inventive concept of the present application.
由上述说明可知,在本申请实施例所公开的封装结构中,第一芯片模组200设置于基板100的空腔110,基板100的第一表面130设置有第一再分布层300,基板100的第二表面140设置有第二再分布层400,第二芯片模组500设置于第二再分布层400上而以第二再分布层400作为支撑载体;同时,第一再分布层300和第二再分布层400电连接,因此通过第一再分布层300安装于安装基础上后,即可实现整个封装结构的正常使用。As can be seen from the above description, in the package structure disclosed in the embodiments of the present application, the first chip module 200 is disposed in the cavity 110 of the substrate 100 , the first redistribution layer 300 is disposed on the first surface 130 of the substrate 100 , and the substrate 100 The second surface 140 of the chip is provided with a second redistribution layer 400, the second chip module 500 is disposed on the second redistribution layer 400 and the second redistribution layer 400 is used as a supporting carrier; at the same time, the first redistribution layer 300 and The second redistribution layer 400 is electrically connected, so after the first redistribution layer 300 is installed on the mounting base, the entire package structure can be used normally.
相较于现有技术,本申请实施例公开的封装结构通过将第一芯片模组嵌设在基板内,并在第二再分布层设置第二芯片模组,仅仅利用一个基板就实现了电子元件的堆叠封装,避免了使用过多的基板和锡球,同时第一再分布层300和第二再分布层400的厚度尺寸均较小,无疑能够使得整个封装结构的厚度尺寸减薄、并简化了该封装结构的整体结构。Compared with the prior art, in the package structure disclosed in the embodiments of the present application, by embedding the first chip module in the substrate and disposing the second chip module in the second redistribution layer, the electronic module can be realized by using only one substrate. The stacking package of components avoids the use of too many substrates and solder balls, and at the same time, the thicknesses of the first redistribution layer 300 and the second redistribution layer 400 are both small, which can undoubtedly reduce the thickness of the entire package structure and reduce the size of the package. The overall structure of the package structure is simplified.
为了进一步地减薄该封装结构的厚度,在可选的方案中,空腔110贯通第二表面140,第二再分布层400覆盖空腔110。应理解的是,如此设置下,第一芯片模组200可通过空腔110外露于基板100靠近第二再分布层400一侧,且在保持第一芯片模组200的尺寸大小不变的情况下,无疑能够减小空腔110的尺寸大小,也即,使得基板100在其厚度方向上减薄,进而实现该封装结构整体的厚度减薄。In order to further reduce the thickness of the package structure, in an optional solution, the cavity 110 penetrates through the second surface 140 , and the second redistribution layer 400 covers the cavity 110 . It should be understood that, under this arrangement, the first chip module 200 can be exposed to the side of the substrate 100 close to the second redistribution layer 400 through the cavity 110 , and the size of the first chip module 200 is kept unchanged. Therefore, the size of the cavity 110 can undoubtedly be reduced, that is, the substrate 100 can be thinned in the thickness direction thereof, thereby realizing the thinning of the overall thickness of the package structure.
如前所述,在本实施例中,未限制第一芯片模组200内部的芯片结构的具体数量。以 第一芯片模组200包括两个芯片结构为例,第一芯片模组200可以包括层叠设置的第一芯片210和第二芯片220,第一芯片210朝向第一再分布层300,并与第一再分布层300电连接,第二芯片220朝向第二再分布层400,并与第二再分布层400电连接。具体而言,如此设置下,无疑能够方便缩短第一芯片210和第二芯片220的信息传输路径,能以更低的成本实现更高的信息交互效率;同时,在实现第一芯片210与第一再分布层300的电连接和第二芯片220与第二再分布层400的电连接时,也方便了加工操作。As mentioned above, in this embodiment, the specific number of chip structures inside the first chip module 200 is not limited. Taking the first chip module 200 including two chip structures as an example, the first chip module 200 may include a first chip 210 and a second chip 220 that are stacked and arranged. The first chip 210 faces the first redistribution layer 300 and is connected to the first redistribution layer 300 . The first redistribution layer 300 is electrically connected, and the second chip 220 faces the second redistribution layer 400 and is electrically connected to the second redistribution layer 400 . Specifically, under such a setting, the information transmission path between the first chip 210 and the second chip 220 can undoubtedly be shortened, and a higher information exchange efficiency can be achieved at a lower cost; The electrical connection of the first redistribution layer 300 and the electrical connection of the second chip 220 to the second redistribution layer 400 also facilitates processing operations.
通常情况下,第一芯片210和第二芯片220之间可以通过粘接层230实现固定连接,粘接层230具体可采用芯片粘接膜。基于粘接层230,可使得第一芯片210和第二芯片220具备一定的整体性,方便安装固定;同时即使在第一芯片210和第二芯片220受到挤压时,粘接层230对第一芯片210和第二芯片220产生作用为柔性作用,可以避免对第一芯片210和第二芯片220造成损坏。Normally, the first chip 210 and the second chip 220 can be fixedly connected through an adhesive layer 230, and the adhesive layer 230 can be specifically a die-bonding film. Based on the adhesive layer 230, the first chip 210 and the second chip 220 can have a certain integrity, which is convenient for installation and fixation; at the same time, even when the first chip 210 and the second chip 220 are pressed, the The first chip 210 and the second chip 220 function as flexibility, which can avoid damage to the first chip 210 and the second chip 220 .
结合前述,为了进一步减薄该封装结构,可设置空腔110贯穿基板100,而为了实现上述的技术特征可通过在基板100的第二表面140进行减薄的技术手段;在减薄的过程中,由于存在接触而损坏第二芯片220的风险,在可选的方案中,第二芯片220在朝向第二再分布层400的端面可以设置有导电凸起221,第二芯片220通过导电凸起221与第二再分布层400电连接。In combination with the foregoing, in order to further thin the package structure, the cavity 110 may be arranged to penetrate through the substrate 100, and in order to achieve the above-mentioned technical features, the second surface 140 of the substrate 100 may be thinned by technical means; during the thinning process , due to the risk of damage to the second chip 220 due to contact, in an optional solution, the second chip 220 may be provided with conductive bumps 221 on the end face facing the second redistribution layer 400, and the second chip 220 passes through the conductive bumps 221 is electrically connected to the second redistribution layer 400 .
应理解的是,由于第二芯片220朝向第二再分布层400的端面设置有导电凸起221,当对基板100的第二表面140进行减薄加工时,即使减薄至空腔110中,导电凸起221能够阻止对第二芯片220进行减薄,相当于对第二芯片220起到了防护作用,并能够即时提醒操作人员已减薄到位,操作人员即可停止再对基板100进行减薄;同时,导电凸起221还具备导电性能,能够方便地实现第二芯片220与第二再分布层400的电连接;再者,由于导电凸起211起到间隔作用,也能够增加空气流动空间,提升该封装结构内部的散热效率。It should be understood that since the end surface of the second chip 220 facing the second redistribution layer 400 is provided with the conductive bumps 221 , when the second surface 140 of the substrate 100 is thinned, even if it is thinned into the cavity 110 , The conductive bumps 221 can prevent the thinning of the second chip 220, which is equivalent to protecting the second chip 220, and can instantly remind the operator that the thinning is in place, and the operator can stop thinning the substrate 100 again. At the same time, the conductive bumps 221 also have electrical conductivity, which can easily realize the electrical connection between the second chip 220 and the second redistribution layer 400; moreover, because the conductive bumps 211 play a role of spacing, it can also increase the air flow space , to improve the heat dissipation efficiency inside the package structure.
为了确保第二芯片220与第二再分布层400可靠连接,在可选的方案中,导电凸起221可以为多个,且多个导电凸起221均匀布设于第二芯片220。应理解的是,由于导电凸起221有多个,因此即在第二芯片220与第二再分布层400之间建立了多点连接,相当于第二芯片220在第二再分布层400上具有多个支撑作用点,如此即可提升二者之间的连接稳定性。In order to ensure reliable connection between the second chip 220 and the second redistribution layer 400 , in an optional solution, there may be multiple conductive bumps 221 , and the plurality of conductive bumps 221 are evenly distributed on the second chip 220 . It should be understood that since there are multiple conductive bumps 221 , multi-point connections are established between the second chip 220 and the second redistribution layer 400 , which is equivalent to that the second chip 220 is on the second redistribution layer 400 With multiple support points, the connection stability between the two can be improved.
进一步地,可在第一芯片模组200之外的空腔110间隙内填充模制材料,避免第一芯片模组200出现错位、移动等情况,进而提升安装稳定性。Further, the gap of the cavity 110 outside the first chip module 200 can be filled with molding material to prevent the first chip module 200 from being displaced or moved, thereby improving the installation stability.
结合前述,本实施例中在第一再分布层300与第二再分布层400之间需要建立电连接 关系,而在堆叠封装中通过传统的方式(例如打线、锡球等)进行厚度方向上的电连接,无疑会增大封装结构的厚度尺寸。基于此,在可选的方案中,基板100上开设有硅穿孔120,第一再分布层300通过硅穿孔120与第二再分布层400电连接。In combination with the foregoing, in this embodiment, an electrical connection relationship needs to be established between the first redistribution layer 300 and the second redistribution layer 400 , and in the stacked package, the thickness direction is carried out by conventional methods (eg, wire bonding, solder balls, etc.). The electrical connection on the package structure will undoubtedly increase the thickness and size of the package structure. Based on this, in an optional solution, through silicon vias 120 are formed on the substrate 100 , and the first redistribution layer 300 is electrically connected to the second redistribution layer 400 through the silicon vias 120 .
需要说明的是,为了使得硅穿孔120具备导电性能,通常需要在硅穿孔120中填充导电材料,如铜、多晶硅、钨等物质。具体而言,由于硅穿孔120嵌设于基板100中,因此只需要第一再分布层300和第二再分布层400分别与硅穿孔120实现电连接,就能够确保第一再分布层300和第二再分布层400实现跨越基板100的电连接关系。基于硅穿孔120的实施方式,该封装结构能够避免使用传统的电连接结构,进而能够提升其空间利用率,其次,硅穿孔120能够缩短第一再分布层300与第二再分布层400之间的信息传输路径,进而提升该封装结构的信息交互效率。It should be noted that, in order to make the TSV 120 have electrical conductivity, it is usually necessary to fill the TSV 120 with a conductive material, such as copper, polysilicon, tungsten and other substances. Specifically, since the TSV 120 is embedded in the substrate 100 , the first redistribution layer 300 and the second redistribution layer 400 only need to be electrically connected to the TSV 120 , respectively, to ensure that the first redistribution layer 300 and the second redistribution layer 400 are electrically connected to the TSV 120 respectively. The second redistribution layer 400 implements an electrical connection relationship across the substrate 100 . Based on the TSV 120 implementation, the package structure can avoid using a traditional electrical connection structure, thereby improving its space utilization. Secondly, the TSV 120 can shorten the gap between the first redistribution layer 300 and the second redistribution layer 400 the information transmission path, thereby improving the information exchange efficiency of the packaging structure.
基于前述的封装结构,本申请实施例还公开一种电子设备,所公开的电子设备包括前述的封装结构。本申请实施例公开的电子设备可以是智能手机、平板电脑、电子书阅读器、可穿戴设备等设备,本申请实施例不限制电子设备的具体种类。Based on the aforementioned packaging structure, an embodiment of the present application further discloses an electronic device, and the disclosed electronic device includes the aforementioned packaging structure. The electronic devices disclosed in the embodiments of the present application may be devices such as smart phones, tablet computers, e-book readers, and wearable devices, and the embodiments of the present application do not limit the specific types of electronic devices.
本申请实施例还公开一种封装结构的制作方法,所公开的制作方法可以包括:The embodiment of the present application also discloses a manufacturing method of a package structure, and the disclosed manufacturing method may include:
步骤S100:提供基板100,在基板100的第一表面130构造空腔110。在本实施例中,构造空腔110的具体方式有多种,例如通过CNC加工处理、模压处理等。Step S100 : the substrate 100 is provided, and the cavity 110 is formed on the first surface 130 of the substrate 100 . In this embodiment, there are various specific ways to construct the cavity 110 , for example, through CNC processing, molding processing, and the like.
步骤S200:提供第一芯片模组200,将第一芯片模组200设置于空腔110中。Step S200 : providing the first chip module 200 , and disposing the first chip module 200 in the cavity 110 .
在与前述的实施方式相匹配的情况下,步骤S200可以包括:In the case of matching with the foregoing embodiments, step S200 may include:
步骤S210:提供第二芯片220,在第二芯片220朝向空腔110之内的端面构造导电凸起221,将第二芯片220设置于空腔110中;Step S210 : providing the second chip 220 , constructing conductive bumps 221 on the end surface of the second chip 220 facing the cavity 110 , and disposing the second chip 220 in the cavity 110 ;
步骤S220:提供第一芯片210,并将第一芯片210粘接于第二芯片220朝向空腔110之外的端面;Step S220 : providing the first chip 210 and bonding the first chip 210 to the end surface of the second chip 220 facing outside the cavity 110 ;
步骤S230:提供封装模制材料,使用封装模制材料填充空腔110。Step S230: Provide an encapsulation molding material, and fill the cavity 110 with the encapsulation molding material.
步骤S300:在基板100的第一表面130层叠组合第一再分布层300,并将第一再分布层300覆盖于空腔110。步骤S300具体还包括将第一芯片210与第一再分布层300电连接。Step S300 : stacking and combining the first redistribution layer 300 on the first surface 130 of the substrate 100 , and covering the cavity 110 with the first redistribution layer 300 . Step S300 specifically further includes electrically connecting the first chip 210 with the first redistribution layer 300 .
步骤S400:在基板100的第二表面140层叠组合第二再分布层400,并将第二再分布层400与第一再分布层300电连接。Step S400 : stacking and combining the second redistribution layer 400 on the second surface 140 of the substrate 100 , and electrically connecting the second redistribution layer 400 and the first redistribution layer 300 .
在与前述的实施方式相匹配的情况下,步骤S400可以包括:In the case of matching with the foregoing embodiments, step S400 may include:
步骤S410:在基板100的第二表面140进行减薄处理,以使得空腔110贯通基板。如此,第一芯片模组200则外露出基板100之外。在本实施例中,未对减薄工艺的具体类型 做出限制,通常可以通过机械研磨工艺来实现减薄,当然也可以通过化学腐蚀、机械玻璃、热烘烤、紫外光照射、激光烧蚀、化学机械抛光或湿法剥离等方式实现减薄。Step S410 : performing a thinning process on the second surface 140 of the substrate 100 so that the cavity 110 penetrates through the substrate. In this way, the first chip module 200 is exposed outside the substrate 100 . In this embodiment, the specific type of the thinning process is not limited. Generally, the thinning can be achieved by a mechanical grinding process, and of course, it can also be achieved by chemical etching, mechanical glass, thermal baking, ultraviolet light irradiation, and laser ablation. , chemical mechanical polishing or wet peeling to achieve thinning.
步骤S420:在基板100上构造硅穿孔120,应理解的是,硅穿孔120应贯通基板100,也即可自基板100的第一表面130贯通至第二表面140;Step S420 : constructing through silicon vias 120 on the substrate 100 , it should be understood that the silicon vias 120 should penetrate through the substrate 100 , that is, from the first surface 130 of the substrate 100 to the second surface 140 ;
在减薄之后的基板100的第二表面140层叠组合第二再分布层400,并将第二再分布层400通过硅穿孔120与第一再分布层300电连接。步骤S420具体还包括将第二芯片220与第二再分布层400电连接。更为具体地,第二芯片220通过导电凸起221与第二再分布层400电连接。The second redistribution layer 400 is stacked and assembled on the second surface 140 of the thinned substrate 100 , and the second redistribution layer 400 is electrically connected to the first redistribution layer 300 through the TSV 120 . Step S420 specifically further includes electrically connecting the second chip 220 with the second redistribution layer 400 . More specifically, the second chip 220 is electrically connected to the second redistribution layer 400 through the conductive bumps 221 .
步骤S500:提供第二芯片模组500,将第二芯片模组500设置于第二再分布层400。步骤S500具体还包括将第二芯片模组500与第二再分布层400电连接。步骤S500还可以包括提供封装模制材料,使用封装模制材料构造覆盖第二芯片模组500和第二再分布层400的模封部600。Step S500 : providing the second chip module 500 , and disposing the second chip module 500 on the second redistribution layer 400 . Step S500 specifically further includes electrically connecting the second chip module 500 and the second redistribution layer 400 . Step S500 may further include providing an encapsulation molding material, and using the encapsulation molding material to construct the molding part 600 covering the second chip module 500 and the second redistribution layer 400 .
当然,在本实施例中,构造模封部600的方法有多种,例如压缩成形、印刷、转送成形、液体密封成形、真空压合、旋涂。Of course, in this embodiment, there are various methods for constructing the mold sealing portion 600, such as compression molding, printing, transfer molding, liquid sealing molding, vacuum pressing, and spin coating.
该封装结构的制作方法还可以包括步骤S600:在第一再分布层300背离基板100的一侧构造电连接部700。在实际使用时,可通过电连接部700安装连接于安装基础上。The manufacturing method of the package structure may further include step S600 : constructing an electrical connection portion 700 on a side of the first redistribution layer 300 away from the substrate 100 . In actual use, it can be installed and connected to the installation foundation through the electrical connection part 700 .
上面结合附图对本申请的实施例进行了描述,但是本申请并不局限于上述的具体实施方式,上述的具体实施方式仅仅是示意性的,而不是限制性的,本领域的普通技术人员在本申请的启示下,在不脱离本申请宗旨和权利要求所保护的范围情况下,还可做出很多形式,均属于本申请的保护之内。The embodiments of the present application have been described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific embodiments, which are merely illustrative rather than restrictive. Under the inspiration of this application, without departing from the scope of protection of the purpose of this application and the claims, many forms can be made, which all fall within the protection of this application.

Claims (10)

  1. 一种封装结构,其中,包括:A package structure, including:
    基板(100),所述基板(100)具有第一表面(130)、第二表面(140)和空腔(110),所述第一表面(130)和所述第二表面(140)相背设置,所述空腔(110)贯通所述第一表面(130);A substrate (100) having a first surface (130), a second surface (140) and a cavity (110), the first surface (130) and the second surface (140) being in phase the back is arranged, the cavity (110) penetrates the first surface (130);
    第一芯片模组(200),所述第一芯片模组(200)设置于所述空腔(110);a first chip module (200), wherein the first chip module (200) is disposed in the cavity (110);
    第一再分布层(300),所述第一再分布层(300)设置于所述第一表面(130),且覆盖所述空腔(110);a first redistribution layer (300), the first redistribution layer (300) is disposed on the first surface (130) and covers the cavity (110);
    第二再分布层(400),所述第二再分布层(400)设置于所述第二表面(140),且与所述第一再分布层(300)电连接;a second redistribution layer (400), the second redistribution layer (400) is disposed on the second surface (140) and is electrically connected to the first redistribution layer (300);
    第二芯片模组(500),所述第二芯片模组(500)设置于所述第二再分布层(400);a second chip module (500), the second chip module (500) is disposed on the second redistribution layer (400);
    其中,所述第一芯片模组(200)与所述第一再分布层(300)和所述第二再分布层(400)的至少一者电连接,所述第二芯片模组(500)与所述第二再分布层(400)电连接。Wherein, the first chip module (200) is electrically connected to at least one of the first redistribution layer (300) and the second redistribution layer (400), and the second chip module (500) ) is electrically connected to the second redistribution layer (400).
  2. 根据权利要求1所述的封装结构,其中,所述空腔(110)贯通所述第二表面(140),所述第二再分布层(400)覆盖所述空腔(110)。The package structure according to claim 1, wherein the cavity (110) penetrates through the second surface (140), and the second redistribution layer (400) covers the cavity (110).
  3. 根据权利要求2所述的封装结构,其中,所述第一芯片模组(200)包括层叠设置的第一芯片(210)和第二芯片(220),所述第一芯片(210)朝向所述第一再分布层(300),并与所述第一再分布层(300)电连接,所述第二芯片(220)朝向所述第二再分布层(400),并与所述第二再分布层(400)电连接。The package structure according to claim 2, wherein the first chip module (200) comprises a first chip (210) and a second chip (220) arranged in layers, the first chip (210) facing the The first redistribution layer (300) is electrically connected to the first redistribution layer (300), and the second chip (220) faces the second redistribution layer (400) and is connected to the first redistribution layer (300). The two redistribution layers (400) are electrically connected.
  4. 根据权利要求3所述的封装结构,其中,所述第一芯片(210)和所述第二芯片(220)之间通过粘接层(230)实现固定连接。The package structure according to claim 3, wherein a fixed connection is achieved between the first chip (210) and the second chip (220) through an adhesive layer (230).
  5. 根据权利要求3所述的封装结构,其中,所述第二芯片(220)在朝向所述第二再分布层(400)的端面设置有导电凸起(221),所述第二芯片(220)通过所述导电凸起(221)与所述第二再分布层(400)电连接。The package structure according to claim 3, wherein the second chip (220) is provided with a conductive bump (221) on the end face facing the second redistribution layer (400), and the second chip (220) ) is electrically connected to the second redistribution layer (400) through the conductive bumps (221).
  6. 根据权利要求5所述的封装结构,其中,所述导电凸起(221)为多个,且多个所述导电凸起(221)均匀布设于所述第二芯片(220)。The package structure according to claim 5, wherein a plurality of the conductive bumps (221) are provided, and the plurality of the conductive bumps (221) are evenly arranged on the second chip (220).
  7. 根据权利要求1所述的封装结构,其中,所述基板(100)上开设有硅穿孔(120),所述第一再分布层(300)通过所述硅穿孔(120)与所述第二再分布层(400)电连接。The package structure according to claim 1, wherein a through-silicon (120) is opened on the substrate (100), and the first redistribution layer (300) communicates with the second through-silicon (120) through the through-silicon (120). The redistribution layer (400) is electrically connected.
  8. 根据权利要求1所述的封装结构,其中,所述基板(100)为硅基板。The package structure according to claim 1, wherein the substrate (100) is a silicon substrate.
  9. 一种电子设备,其中,包括权利要求1至8中任一项所述的封装结构。An electronic device, comprising the packaging structure of any one of claims 1 to 8.
  10. 一种封装结构的制作方法,其中,包括:A manufacturing method of a package structure, comprising:
    提供基板(100),在所述基板(100)的第一表面(130)构造空腔(110);providing a substrate (100) with a cavity (110) formed in a first surface (130) of the substrate (100);
    提供第一芯片模组(200),将所述第一芯片模组(200)设置于所述空腔(110)中;A first chip module (200) is provided, and the first chip module (200) is arranged in the cavity (110);
    在所述基板(100)的第一表面(130)层叠组合第一再分布层(300),并将所述第一再分布层(300)覆盖于所述空腔(110);A first redistribution layer (300) is laminated and combined on the first surface (130) of the substrate (100), and the first redistribution layer (300) is covered on the cavity (110);
    在所述基板(100)的第二表面(140)层叠组合第二再分布层(400),并将所述第二再分布层(400)与所述第一再分布层(300)电连接;A second redistribution layer (400) is laminated and combined on the second surface (140) of the substrate (100), and the second redistribution layer (400) is electrically connected to the first redistribution layer (300). ;
    提供第二芯片模组(500),将所述第二芯片模组(500)设置于所述第二再分布层(400)。A second chip module (500) is provided, and the second chip module (500) is disposed on the second redistribution layer (400).
PCT/CN2021/119248 2020-09-22 2021-09-18 Packaging structure and manufacturing method therefor, and electronic device WO2022063069A1 (en)

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