WO2022058313A1 - Molded resin power module - Google Patents

Molded resin power module Download PDF

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Publication number
WO2022058313A1
WO2022058313A1 PCT/EP2021/075247 EP2021075247W WO2022058313A1 WO 2022058313 A1 WO2022058313 A1 WO 2022058313A1 EP 2021075247 W EP2021075247 W EP 2021075247W WO 2022058313 A1 WO2022058313 A1 WO 2022058313A1
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WO
WIPO (PCT)
Prior art keywords
power module
conducting
conducting tracks
mold material
substrate
Prior art date
Application number
PCT/EP2021/075247
Other languages
French (fr)
Inventor
Lars Paulsen
Original Assignee
Danfoss Silicon Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Publication of WO2022058313A1 publication Critical patent/WO2022058313A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements

Definitions

  • the present invention relates to a molded power module having a laminated DC-link structure and a method for producing a molded power module having a laminated DC-link structure.
  • aspects of electrical current flow within a module which have strong influence on the stray inductance include the loop area of a current path.
  • One way of reducing the loop area is to ensure that conductors passing a current are placed as close as possible to each other.
  • the design feature which is well known in the prior art, of having current-carrying busbars constructed from flat plates that are mounted very close to each other.
  • busbars can be assembled by simply mounting the conductor plates a short distance apart in air. An improvement is made by placing a thin film of insulator between the conducting plates, so that the distance apart may be made as thin as the insulation. Laminated busbars, made from two or more flat plates which are solidly attached to an insulating film (perhaps by partially melting the insulation whilst the plates are held in the required separation) are becoming popular.
  • the internal circuitry of a power module can be made to conform to the creepage and clearance requirements, particularly if the module is a molded module, where the internal components are completely surrounded by an insulating molding material.
  • the external connections need to be separated by at least the clearance, and the surface of the mold compound needs to be configured to have enough creepage distance between relevant conductors. This is often done by forming ridges in the mold compound which increases the along-the-surface distance.
  • the object of the present invention can be achieved by a molded semiconductor power module as defined in claim 1 and by a method for manufacturing a molded semiconductor power module as defined in claim 12.
  • Preferred embodiments are defined in the dependent subclaims, explained in the following description and illustrated in the accompanying drawings.
  • the molded semiconductor power module according to the invention is a molded semiconductor power module comprising a busbar that comprises at least two laminated conducting tracks, wherein at least two of the conducting tracks extend through the molded surface of the power module to form connection areas, wherein each connection area is insulated from the other connection area(s) by an insulating mold material.
  • the prior art molded power modules typically use single-layer lead frames. Accordingly, these molded power modules do not enable the external connections' (positive and negative) electrodes to be arranged so close together as it is possible when providing a molded power module that comprises a laminated structure.
  • the inventive busbar comprises at least two laminated conducting tracks.
  • the busbar comprises two laminated conducting tracks.
  • the busbar comprises three laminated conducting tracks.
  • the busbar comprises four laminated conducting tracks.
  • the conducting tracks extend through the molded surface of the power module and form connection areas. Accordingly, the distal portion of the conducting tracks protrude from the molded surface.
  • connection area is insulated from the other connection area(s) by an insulating mold material.
  • insulating mold material it is possible to use the insulating mold material to separate the two or more conductors of the busbar before they come to the surface, and bring them to the surface at sufficient distances from one another.
  • an insulation layer made of a different material than the insulating mold material is provided between the conducting tracks.
  • the clearance distance between adjacent connection areas is larger than the distance between the corresponding adjacent conducting tracks at the portion at which the insulation layer is arranged. It may be an advantage that the thickness of the insulation layer corresponds to the distance between the corresponding adjacent conducting tracks at the portion at which the insulation layer is arranged.
  • connection areas contact portions
  • the distal portion of the connection areas are separated from each other to such an extent that the clearance distance between adjacent connection areas is at least 4 mm.
  • portion connection areas are separated from each other to such an extent that the clearance distance between adjacent connection areas is at least 8 mm.
  • the portion connection areas are separated from each other to such an extent that the clearance between adjacent connection areas (contact portions) is at least twice as large as the thickness of the insulation layer provided between said connection areas.
  • the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is selected depending upon: a) the working voltage; b) the pollution degree of the environment of operation and/or c) the mold material.
  • the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is selected depending upon the working voltage. In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is selected depending upon the pollution degree of the environment of operation.
  • the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is selected depending upon the mold material.
  • portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is in the range 1-10 mm.
  • the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is in the range 2-8 mm.
  • the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is in the range 4-7 mm.
  • the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is at least 6 mm.
  • the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is at least 5 mm.
  • the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is at least 4 mm.
  • the thickness of the insulation layer is smaller than the thickness of the conducting track.
  • the internal components are completely surrounded by the mold material.
  • connection areas of the power module protrude from opposing sides of the molded portion of the power module.
  • connection areas of the power module protrude from the same side of the molded portion of the power module.
  • connection area extends perpendicular to the laminated portion of the corresponding conducting track.
  • a cylindrical contact portion protrudes from and extends perpendicular to the corresponding conducting track.
  • a female portion may be inserted over the cylindrical contact portion to establish such mechanical and electrical connection.
  • the cylindrical portion may be threaded to allow a bolted connection.
  • the laminated portions of the conducting tracks extend parallel to each other.
  • a contact portion is provided in each connection area and that the contact portions extend parallel or perpendicular to each other.
  • At least one of the conducting tracks is separated from its adjacent insulation layer and that the at least one conducting track extends through a separation portion, in which the at least one conducting track is surrounded and separated by the insulating mold material.
  • all the conducting tracks are separated from their adjacent insulation layer, wherein the conducting tracks extend through a separation portion, in which each of the conducting track is surrounded and separated by the insulating mold material.
  • the method according to the invention is a method for manufacturing a molded semiconductor power module having a busbar that comprises at least two laminated conducting tracks, wherein the method comprises the steps of: a) attaching a conducting layer (e.g. a DC-link layer) to a substrate; b) attaching a plurality of semiconductors to the substrate; c) electrically connecting the semiconductors to the DC link layer; d) attaching a busbar that comprises at least two laminated conducting tracks to the substrate and e) molding the module by using an insulating mold material, wherein at least two of the conducting tracks extend through the molded surface of the power module to form connection areas, wherein each connection area is insulated from the other connection area(s) by the insulating mold material.
  • a conducting layer e.g. a DC-link layer
  • the semiconductors are transistors.
  • the semiconductors are SiC MOSFETs.
  • the substrate is a ceramic substrate.
  • the method comprises the step of attaching one or more control printed circuit boards (PCBs) to the substrate.
  • PCBs control printed circuit boards
  • the transistors are attached to the ceramic substrate by means of a sintering process.
  • PCBs control printed circuit boards
  • the electrical connection between the semiconductors and the conducting layer is established by using wire bonds.
  • busbar is attached to the substrate by using ultrasonic welding.
  • the substrate is a ceramic substrate.
  • the substrate is a direct bonded copper (DBC) substrate.
  • DBC direct bonded copper
  • the substrate is an active metal braze (AMB) substrate.
  • the method comprises the steps of providing the busbar by placing an insulating layer between a first conducting track and a second conducting track.
  • the first conducting track comprises a plate-shaped portion constituting a contact portion provided with a hole.
  • a male portion may be inserted into the hole to establish the required mechanical and electrical connection.
  • the male portion might be a threaded male portion to allow a bolted connection.
  • the second conducting track comprises a plateshaped portion and a cylindrical contact portion protruding therefrom.
  • a female portion may be inserted over the cylindrical contact portion to establish such mechanical and electrical connection.
  • the cylindrical portion may be threaded to allow a bolted connection.
  • the molded semiconductor power module according to the invention is constructed in such a manner that the lead frame is only partly laminated. This means that only a portion of the lead frame is made as a multi-layer structure. In the molded semiconductor power module, the laminated area is over molded in order to ensure that the creepage and clearance distances are sufficiently large.
  • the required minimum separation distance between the laminated portions of adjacent conducting tracks will typically depend on the blocking voltage and the layer material.
  • the distance between the laminated portions of adjacent conducting tracks is in the range 50-500
  • the distance between the laminated portions of adjacent conducting tracks is in the range 100-400pm.
  • the distance between the laminated portions of adjacent conducting tracks is in the range 150-350pm.
  • Fig. 1A shows a DBC substrate
  • Fig. IB shows the DBC substrate shown in Fig. 1A in a configuration, in which an insulating foil provided with holes is attached to the DBC substrate;
  • Fig. 1C shows the DBC substrate shown in Fig. IB in a configuration, in which a conducting layer has been attached to the insulating foil;
  • Fig. 2A shows the DBC substrate shown in Fig. 2C in a configuration, in which a connection area is electrically connected to the top metal layer of the DBC substrate;
  • Fig. 2B shows a cross-sectional view of a portion of the DBC substrate and components attached there to shown in Fig. 2A;
  • Fig. 2C shows the DBC substrate shown in Fig. 2A in a configuration, in which an insulating layer is placed on the top of the connection area;
  • Fig. 3A shows the DBC substrate shown in Fig. 2C in a configuration, in which an additional connection area is placed on top of the insulation layer;
  • Fig. 3B shows the assembly illustrated in Fig. 3A after a molding process
  • Fig. 4A shows a schematic cross-sectional view of a power module according to the invention
  • Fig. 4B shows a schematic cross-sectional view of a portion of a power module according to the invention
  • Fig. 5A shows a schematic cross-sectional view of a portion of a power module according to the invention
  • Fig. 5B shows a close-up view of a portion of ridges of the power module shown in Fig. 5A;
  • Fig. 5C shows a perspective view of a portion of a power module according to the invention.
  • Fig. 6 shows a perspective view of a power module according to a further embodiment of the invention.
  • Fig. 7 shows a perspective view of a power module according to yet another embodiment of the invention.
  • Fig. 1A illustrates a DBC substrate 36 comprising a ceramic substrate 24 sandwiched between a top metal layer 32 and a bottom metal layer 32'.
  • Fig. 1A illustrates a first step of a manufacturing method according to the invention, wherein a molded semiconductor power module is manufactured.
  • Fig. IB illustrates the DBC substrate 36 shown in Fig. 1A in a configuration, in which an insulating foil 34 is attached to the top of the top metal layer 32. Two rectangular holes 26 are provided in the foil 34 to give access to the top metal layer 32. Accordingly, Fig. IB illustrates a next step of the manufacturing method according to the invention.
  • Fig. 1C illustrates the DBC substrate shown in Fig. IB in a configuration, in which a conducting layer 22 has been attached to the insulating foil 34.
  • the attachment may be established by ultrasonic welding. It can be seen that the conducting layer 22 is provided with two holes 25 that are slightly larger than the holes 26 in the insulating foil 34. Accordingly, there is access to the top metal layer 32 through the holes 25 in the conducting layer 22.
  • Fig. 2A illustrates the DBC substrate shown in Fig. 1C in a configuration, in which a connection area 10 has been electrically connected to the top metal layer 32 of the DBC substrate.
  • the connection area 10 constitutes and comprises a conducting track 6 that has a contact portion 14 provided with a hole 18.
  • the conducting track 6 is connected to the top metal layer 32 of the DBC substrate by means of two conductors 28, 28' that extend through the holes in the insulating foil 34 and the conducting layer 22.
  • the conductors 28, 28' extend parallel to each other and comprise an L-shaped portion attached to a plate-shaped distal portion that is attached and thus electrically connected to the top metal layer 32 of the DBC.
  • Fig. 2B illustrates a cross-sectional view of a portion of the DBC substrate 36 and components attached there to shown in Fig. 2A.
  • the DBC substrate 36 comprises a ceramic substrate 24 sandwiched between a top metal layer 32 and a bottom metal layer 32'.
  • An insulating foil 34 is attached to the top metal layer 32 and a conducting layer 22 (e.g. made in copper) is attached to the topside of the insulating foil 34.
  • the conductor 28 comprises an L- shaped portion attached to a plate-shaped distal portion that is attached the top metal layer 32 of the DBC 36.
  • the conductor 28 extends through the hole 26 in the insulating foil 34 and the hole 25 in the conducting layer 22.
  • Fig. 2C illustrates the DBC substrate shown in Fig. 2A in a configuration, in which an insulation layer 20 is placed on the conducting track 6 of the connection area 10.
  • the insulation layer 20 is placed on the conducting track 6 and the proximal part of the L-shaped portion of the conductors 28, 28'.
  • Fig. 3A illustrates the DBC substrate shown in Fig. 2C in a configuration, in which an additional connection area 10' is placed on top of the insulation layer 20.
  • the additional connection area 10' comprises a conducting track 6' and a cylindrical contact portion 14' protruding therefrom.
  • the additional connection area 10' comprises two conductors 30, 30'.
  • Each of the conductors 30, 30' comprise an L-shaped portion that is attached to a plate-shaped distal portion that is attached and thus electrically connected to the top metal layer 32 of the DBC 36. The attachment may be accomplished by using ultrasonic welding.
  • Fig. 3B illustrates the assembly (a power module being assembled) illustrated in Fig. 3A after a molding process.
  • the power module 2 illustrated in Fig. 2A comprises a molded surface 8. It can be seen that the two conducting tracks (shown as 6, 6' in Fig. 2B) extend through the molded surface 8 of the power module 2 to form the two connection areas 10, 10', respectively.
  • the first connection area 10 comprises a plate-shaped portion provided with a hole 18.
  • the second connection area 10' comprises a plate-shaped portion and a cylindrical contact portion 14' protruding therefrom. Accordingly, the power module 2 enables a fast, firm and reliable mechanical and electrical connection with corresponding contact elements.
  • a cylindrical male contact element may be inserted into the hole 18, whereas a circular female contact element may receive the cylindrical contact portion 14' to establish a mechanical and electrical connection.
  • Fig. 4A illustrates a schematic cross-sectional view of a molded semiconductor power module 2 according to the invention.
  • the power module 2 basically corresponds to the one shown in Fig. 3A.
  • the power module 2 comprises a molded surface 8 and a busbar that comprises two laminated conducting tracks 6, 6'. It can be seen that the conducting tracks 6, 6' extend through the molded surface 8 of the power module 2 to form a first connection area 10 and a second connection area 10', respectively.
  • Each connection area 10, 10' is insulated from the other connection area 10, 10' by an insulating mold material 12.
  • the power module 2 comprises a first contact portion 14 provided with a hole 18.
  • the power module 2 also comprises a second contact portion 14' provided with a cylindrical contact portion 14' protruding from the conducting tracks 6'.
  • the laminated conducting tracks 6, 6' are separated by an insulation layer 20. It may be an advantage that the same mold material 12 is used for molding the power module 2 and to insulate the connection areas 10, 10' from each other. It may be beneficial that the insulation layer 20 is made of a different material than the insulating mold material 12.
  • Fig. 4B illustrates a schematic cross-sectional view of a portion of a power module 2 according to the invention.
  • the power module 2 comprises a molded surface 8 and a busbar that comprises two laminated conducting tracks 6, 6'.
  • a portion of each of the conducting tracks 6, 6' extend through the molded surface 8 of the power module 2.
  • the conducting tracks 6, 6' form a first connection area 10 and a second connection area 10', respectively.
  • Each connection area 10, 10' is insulated from the other connection area 10, 10' by an insulating mold material 12.
  • the power module 2 comprises a first contact portion 14 provided with a hole 18.
  • the power module 2 comprises a second contact portion 14' provided with a cylindrical contact portion 14' protruding from the conducting tracks 6'.
  • the laminated conducting tracks 6, 6' are separated by an insulation layer 20. It can be seen that the thickness of the insulation layer 20 is smaller than the thickness of any of the adjacent conducting tracks 6, 6'.
  • the conducting track 6 is separated from its adjacent insulation layer 20. Moreover, the conducting track 6 extends through a separation portion 4, in which the conducting track 6 is surrounded and separated by the insulating mold material 12.
  • Fig. 5A illustrates a schematic cross-sectional view of a portion of a power module 2 according to the invention.
  • the power module 2 comprises a molded surface 8 and a busbar that comprises three laminated conducting tracks 6, 6', 6". A portion of each of the conducting tracks 6, 6', 6" extend through the molded surface 8 of the power module 2.
  • the conducting tracks 6, 6', 6" form three contact portions 14, 14', 14" protruding from the molded surface 8.
  • the contact portions 14, 14', 14" extend parallel to each other. Each contact portion 14, 14', 14" extends through a molded portion of the power module 2. In this molded portion, the contact portions 14, 14', 14" are insulated from each other by an insulating mold material 12.
  • the conducting tracks 6, 6', 6" are electrically insulated from each other and separated by an insulation layer 20, 20'. It can be seen that the thickness of the insulation layer 20, 20' is smaller than the thickness of any of the adjacent conducting tracks 6, 6', 6".
  • the insulation layers 20, 20' extend parallel to the longitudinal axis X of the power module 2.
  • a portion of the conducting tracks 6, 6', 6" also extend parallel to the longitudinal axis X of the power module 2.
  • the distal portion of the conducting tracks 6, 6', 6" constitute contact portions 14, 14', 14" that extend perpendicular to the longitudinal axis X of the power module 2 and parallel to the perpendicular axis Y.
  • Ridges 16 are provided at the molded surface 8 between the adjacent contact portions 14, 14', 14". It can be seen that the clearance distance D3 between adjacent contact portions 14, 14', 14" is larger than the distance Di between the corresponding adjacent conducting tracks 6, 6', 6" at the portion, at which the insulation layers 20, 20' are arranged.
  • the thickness of the insulation layer 20, 20' corresponds to the distance Di between the corresponding adjacent conducting tracks 6, 6', 6" at the portion, at which the insulation layer 20, 20' is arranged.
  • the distal portion of the contact portions 14, 14', 14" are separated from each other to such an extent that the clearance distance D3 between adjacent contact portions 14, 14', 14" is at least 4 mm.
  • the distance D 2 between the straight distal portion of adjacent contact portion 14', 14" inside the mold material 12 corresponds to the distance D 3 between the straight distal portion of adjacent contact portion 14', 14" that protrudes from the molded surface 8.
  • Fig. 5B illustrates a close-up view of a portion of the ridges of the power module shown in Fig. 5A.
  • the creepage distance L should be measured by following the arced path along the ridges.
  • Fig. 5C illustrates a perspective view of a portion of a molded semiconductor power module 2 according to the invention.
  • the power module 2 comprises a first conducting track 6 having an L-shaped distal portion.
  • a hole 18 is provided in the most distal part of the conducting track 6 that constitutes a contact portion 14 protruding from the molded surface 8 of the power module 2.
  • the power module 2 comprises a second conducting track 6' having an L-shaped distal portion.
  • a hole 18 is provided in the most distal part of the second conducting track 6' that constitutes a contact portion 14'.
  • the contact portion 14' protrudes from the opposite side of the molded surface 8 than the first contact portion 14.
  • An insulation layer (not seen) is provided between the conducting tracks 6, 6'. Accordingly, the conducting tracks 6, 6' are laminated.
  • the contour of the mold material 12 is indicated by dotted lines.
  • Fig. 6 illustrates an assembly (a power module being assembled) similar to that shown in Fig. 3B.
  • the first connection area 10 comprises a plate-shaped portion provided with a hole 18.
  • the second connection area 10' comprises a plate-shaped portion and a cylindrical contact portion 14' protruding therefrom.
  • the power module 2 enables a fast, firm and reliable mechanical and electrical connection with corresponding contact elements.
  • a cylindrical male contact element may be inserted into the hole 18, whereas a circular female contact element may receive the cylindrical contact portion 14' to establish a mechanical and electrical connection.
  • the cylindrical contact portion 14' is threaded to allow a bolted connection.
  • Fig. 7 again illustrates an assembly (a power module being assembled) similar to that shown in Fig. 3B.
  • both the first connection area 10 and the second connection area 10' plate-shaped portions and a cylindrical contact portion 14' protruding therefrom.
  • the power module 2 enables a fast, firm and reliable mechanical and electrical connection with corresponding contact elements.
  • a circular female contact element may receive the cylindrical contact portions 14' to establish a mechanical and electrical connection.
  • both of the cylindrical contact portions 14' are threaded to allow a bolted connection.
  • Conducting tracks e.g. lead frame
  • Substrate e.g. ceramic substrate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

A molded semiconductor power module (2) is disclosed. The power module (2) comprises a busbar that comprises at least two laminated conducting tracks (6, 6', 6''). At least two of the conducting tracks (6, 5 6', 6'') extend through the molded surface (8) of the power module (2) to form connection areas (10, 10', 10''). Each connection area (10, 10', 10'') is insulated from the other connection area(s) (10, 10', 10'') by an insulating mold material (12).

Description

MOLDED RESIN POWER MODULE
Field of invention
The present invention relates to a molded power module having a laminated DC-link structure and a method for producing a molded power module having a laminated DC-link structure.
Prior art
It is becoming increasingly important in the field of semiconductor power modules that stray inductances are kept at a minimum. One reason is that new semiconductor technologies in which silicon carbide (SiC) or gallium nitride (GaN) are used as a semiconductor, instead of silicon. These new technologies allow much faster switching than silicon. This in turn allows the semiconductor components to be driven, for example in power switching circuits, at much higher frequencies. The transient response of the circuit (for example, the speed at which electrical current falls after being switched off) limits the maximum frequency at which a semiconductor component may be driven. A dominant parameter in the switching speed is the stray inductance of the circuit in use. The larger the inductance, the slower the transient response, and the lower the maximum frequency that can be used.
Aspects of electrical current flow within a module which have strong influence on the stray inductance, include the loop area of a current path. One way of reducing the loop area is to ensure that conductors passing a current are placed as close as possible to each other. Thus, the design feature, which is well known in the prior art, of having current-carrying busbars constructed from flat plates that are mounted very close to each other.
Such busbars can be assembled by simply mounting the conductor plates a short distance apart in air. An improvement is made by placing a thin film of insulator between the conducting plates, so that the distance apart may be made as thin as the insulation. Laminated busbars, made from two or more flat plates which are solidly attached to an insulating film (perhaps by partially melting the insulation whilst the plates are held in the required separation) are becoming popular.
When high voltages are in use in power modules, particular attention must be paid to the clearance (distance in air between conductors) and creepage (distance along the surface between conductors).
With good design, the internal circuitry of a power module can be made to conform to the creepage and clearance requirements, particularly if the module is a molded module, where the internal components are completely surrounded by an insulating molding material. However, there is always a problem with external connections, where conductors leave the molded mass of the module and enter the external environment. Here the external connections need to be separated by at least the clearance, and the surface of the mold compound needs to be configured to have enough creepage distance between relevant conductors. This is often done by forming ridges in the mold compound which increases the along-the-surface distance.
When working with a power module in which the internal structure comprises a multiple-layer busbar with a very small distance between the plates, there is a problem if the multiple layer busbar simply comes out of the mold surface, since the two conducing plates would inevitably be too close to each other to comply with clearance and/or creepage requirements.
It is desirable to have a molded power module, in which the stray inductance can be reduced in order to enable higher switching frequencies. Accordingly, it is an object of the invention to provide a molded power module having a lower stray inductance, and thus higher switching frequencies, than the prior art molded power modules.
Summary of the invention
The object of the present invention can be achieved by a molded semiconductor power module as defined in claim 1 and by a method for manufacturing a molded semiconductor power module as defined in claim 12. Preferred embodiments are defined in the dependent subclaims, explained in the following description and illustrated in the accompanying drawings.
The molded semiconductor power module according to the invention is a molded semiconductor power module comprising a busbar that comprises at least two laminated conducting tracks, wherein at least two of the conducting tracks extend through the molded surface of the power module to form connection areas, wherein each connection area is insulated from the other connection area(s) by an insulating mold material.
Hereby, it is possible to provide a molded power module having a lower stray inductance and higher switching frequencies than the prior art molded power modules.
The prior art molded power modules typically use single-layer lead frames. Accordingly, these molded power modules do not enable the external connections' (positive and negative) electrodes to be arranged so close together as it is possible when providing a molded power module that comprises a laminated structure.
The inventive busbar comprises at least two laminated conducting tracks. In one embodiment, the busbar comprises two laminated conducting tracks.
In one embodiment, the busbar comprises three laminated conducting tracks.
In one embodiment, the busbar comprises four laminated conducting tracks.
The conducting tracks extend through the molded surface of the power module and form connection areas. Accordingly, the distal portion of the conducting tracks protrude from the molded surface.
Each connection area is insulated from the other connection area(s) by an insulating mold material. Hereby, it is possible to use the insulating mold material to separate the two or more conductors of the busbar before they come to the surface, and bring them to the surface at sufficient distances from one another.
It may be an advantage that the same mold material is used for molding the power module and to insulate the connection area(s) from each other. Hereby, production of the module can be optimised.
It may be advantageous that an insulation layer made of a different material than the insulating mold material is provided between the conducting tracks.
It may be beneficial that the clearance distance between adjacent connection areas is larger than the distance between the corresponding adjacent conducting tracks at the portion at which the insulation layer is arranged. It may be an advantage that the thickness of the insulation layer corresponds to the distance between the corresponding adjacent conducting tracks at the portion at which the insulation layer is arranged.
It may be advantageous that the distal portion of the connection areas (contact portions) are separated from each other to such an extent that the clearance distance between adjacent connection areas is at least 4 mm.
In one embodiment, the portion connection areas (contact portions) are separated from each other to such an extent that the clearance distance between adjacent connection areas is at least 8 mm.
In one embodiment, the portion connection areas are separated from each other to such an extent that the clearance between adjacent connection areas (contact portions) is at least twice as large as the thickness of the insulation layer provided between said connection areas.
In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is selected depending upon: a) the working voltage; b) the pollution degree of the environment of operation and/or c) the mold material.
In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is selected depending upon the working voltage. In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is selected depending upon the pollution degree of the environment of operation.
In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is selected depending upon the mold material.
It may be an advantage that the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is in the range 1-10 mm.
In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is in the range 2-8 mm.
In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is in the range 4-7 mm.
In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is at least 6 mm.
In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is at least 5 mm.
In one embodiment, the portion connection areas are separated from each other to such an extent that the creepage distance between adjacent connection areas is at least 4 mm.
It may be beneficial that for each of the conducting tracks, the thickness of the insulation layer is smaller than the thickness of the conducting track.
In one embodiment, the internal components (all components except for the connection areas of the power module) are completely surrounded by the mold material.
In one embodiment, the connection areas of the power module protrude from opposing sides of the molded portion of the power module.
In one embodiment, the connection areas of the power module protrude from the same side of the molded portion of the power module.
It may be an advantage that at least one connection area extends perpendicular to the laminated portion of the corresponding conducting track.
In one embodiment, a cylindrical contact portion protrudes from and extends perpendicular to the corresponding conducting track. Hereby, it is possible to establish a firm and reliable mechanical and electrical connection in an easy manner. A female portion may be inserted over the cylindrical contact portion to establish such mechanical and electrical connection. The cylindrical portion may be threaded to allow a bolted connection.
It may be advantageous that the laminated portions of the conducting tracks extend parallel to each other.
It may be beneficial that a contact portion is provided in each connection area and that the contact portions extend parallel or perpendicular to each other.
It may be advantageous that inside the power module at least one of the conducting tracks is separated from its adjacent insulation layer and that the at least one conducting track extends through a separation portion, in which the at least one conducting track is surrounded and separated by the insulating mold material.
In one embodiment, inside the power module all the conducting tracks are separated from their adjacent insulation layer, wherein the conducting tracks extend through a separation portion, in which each of the conducting track is surrounded and separated by the insulating mold material.
The method according to the invention is a method for manufacturing a molded semiconductor power module having a busbar that comprises at least two laminated conducting tracks, wherein the method comprises the steps of: a) attaching a conducting layer (e.g. a DC-link layer) to a substrate; b) attaching a plurality of semiconductors to the substrate; c) electrically connecting the semiconductors to the DC link layer; d) attaching a busbar that comprises at least two laminated conducting tracks to the substrate and e) molding the module by using an insulating mold material, wherein at least two of the conducting tracks extend through the molded surface of the power module to form connection areas, wherein each connection area is insulated from the other connection area(s) by the insulating mold material.
Hereby, it is possible to provide a method for manufacturing a molded power module having a lower stray inductance and higher switching frequencies than the prior art molded power modules.
In one embodiment, the semiconductors are transistors.
In one embodiment, the semiconductors are SiC MOSFETs.
In one embodiment, the substrate is a ceramic substrate.
In one embodiment, the method comprises the step of attaching one or more control printed circuit boards (PCBs) to the substrate.
It may be an advantage that the transistors are attached to the ceramic substrate by means of a sintering process.
It may be beneficial that the one or more control printed circuit boards (PCBs) are attached to the substrate by gluing.
It may be advantageous that the electrical connection between the semiconductors and the conducting layer (e.g. DC-link layer) is established by using wire bonds.
It may be an advantage that the busbar is attached to the substrate by using ultrasonic welding.
In one embodiment, the substrate is a ceramic substrate.
In one embodiment, the substrate is a direct bonded copper (DBC) substrate.
In one embodiment, the substrate is an active metal braze (AMB) substrate. In one embodiment, the method comprises the steps of providing the busbar by placing an insulating layer between a first conducting track and a second conducting track.
In one embodiment, the first conducting track comprises a plate-shaped portion constituting a contact portion provided with a hole. Hereby, it is possible to establish a firm and reliable mechanical and electrical connection in an easy manner. A male portion may be inserted into the hole to establish the required mechanical and electrical connection. The male portion might be a threaded male portion to allow a bolted connection.
In one embodiment, the second conducting track comprises a plateshaped portion and a cylindrical contact portion protruding therefrom. Hereby, it is possible to establish a firm and reliable mechanical and electrical connection in an easy manner. A female portion may be inserted over the cylindrical contact portion to establish such mechanical and electrical connection. The cylindrical portion may be threaded to allow a bolted connection.
The molded semiconductor power module according to the invention is constructed in such a manner that the lead frame is only partly laminated. This means that only a portion of the lead frame is made as a multi-layer structure. In the molded semiconductor power module, the laminated area is over molded in order to ensure that the creepage and clearance distances are sufficiently large.
The required minimum separation distance between the laminated portions of adjacent conducting tracks will typically depend on the blocking voltage and the layer material.
In one embodiment, the distance between the laminated portions of adjacent conducting tracks is in the range 50-500|jm.
In one embodiment, the distance between the laminated portions of adjacent conducting tracks is in the range 100-400pm.
In one embodiment, the distance between the laminated portions of adjacent conducting tracks is in the range 150-350pm.
Description of the Drawings
The invention will become more fully understood from the detailed description given herein below. The accompanying drawings are given by way of illustration only, and thus, they are not limitative of the present invention. In the accompanying drawings:
Fig. 1A shows a DBC substrate;
Fig. IB shows the DBC substrate shown in Fig. 1A in a configuration, in which an insulating foil provided with holes is attached to the DBC substrate;
Fig. 1C shows the DBC substrate shown in Fig. IB in a configuration, in which a conducting layer has been attached to the insulating foil;
Fig. 2A shows the DBC substrate shown in Fig. 2C in a configuration, in which a connection area is electrically connected to the top metal layer of the DBC substrate;
Fig. 2B shows a cross-sectional view of a portion of the DBC substrate and components attached there to shown in Fig. 2A;
Fig. 2C shows the DBC substrate shown in Fig. 2A in a configuration, in which an insulating layer is placed on the top of the connection area;
Fig. 3A shows the DBC substrate shown in Fig. 2C in a configuration, in which an additional connection area is placed on top of the insulation layer;
Fig. 3B shows the assembly illustrated in Fig. 3A after a molding process;
Fig. 4A shows a schematic cross-sectional view of a power module according to the invention;
Fig. 4B shows a schematic cross-sectional view of a portion of a power module according to the invention;
Fig. 5A shows a schematic cross-sectional view of a portion of a power module according to the invention;
Fig. 5B shows a close-up view of a portion of ridges of the power module shown in Fig. 5A;
Fig. 5C shows a perspective view of a portion of a power module according to the invention;
Fig. 6 shows a perspective view of a power module according to a further embodiment of the invention and
Fig. 7 shows a perspective view of a power module according to yet another embodiment of the invention.
Detailed description of the invention
Referring now in detail to the drawings for the purpose of illustrating preferred embodiments of the present invention, a series of manufacturing steps according to the invention, wherein a molded semiconductor power module is manufactured are illustrated in Fig. 1A- Fig. 3B.
Fig. 1A illustrates a DBC substrate 36 comprising a ceramic substrate 24 sandwiched between a top metal layer 32 and a bottom metal layer 32'. Fig. 1A illustrates a first step of a manufacturing method according to the invention, wherein a molded semiconductor power module is manufactured.
Fig. IB illustrates the DBC substrate 36 shown in Fig. 1A in a configuration, in which an insulating foil 34 is attached to the top of the top metal layer 32. Two rectangular holes 26 are provided in the foil 34 to give access to the top metal layer 32. Accordingly, Fig. IB illustrates a next step of the manufacturing method according to the invention.
Fig. 1C illustrates the DBC substrate shown in Fig. IB in a configuration, in which a conducting layer 22 has been attached to the insulating foil 34. The attachment may be established by ultrasonic welding. It can be seen that the conducting layer 22 is provided with two holes 25 that are slightly larger than the holes 26 in the insulating foil 34. Accordingly, there is access to the top metal layer 32 through the holes 25 in the conducting layer 22.
Fig. 2A illustrates the DBC substrate shown in Fig. 1C in a configuration, in which a connection area 10 has been electrically connected to the top metal layer 32 of the DBC substrate. The connection area 10 constitutes and comprises a conducting track 6 that has a contact portion 14 provided with a hole 18. The conducting track 6 is connected to the top metal layer 32 of the DBC substrate by means of two conductors 28, 28' that extend through the holes in the insulating foil 34 and the conducting layer 22. The conductors 28, 28' extend parallel to each other and comprise an L-shaped portion attached to a plate-shaped distal portion that is attached and thus electrically connected to the top metal layer 32 of the DBC.
Fig. 2B illustrates a cross-sectional view of a portion of the DBC substrate 36 and components attached there to shown in Fig. 2A. The DBC substrate 36 comprises a ceramic substrate 24 sandwiched between a top metal layer 32 and a bottom metal layer 32'. An insulating foil 34 is attached to the top metal layer 32 and a conducting layer 22 (e.g. made in copper) is attached to the topside of the insulating foil 34. It can be seen that the conductor 28 comprises an L- shaped portion attached to a plate-shaped distal portion that is attached the top metal layer 32 of the DBC 36. The conductor 28 extends through the hole 26 in the insulating foil 34 and the hole 25 in the conducting layer 22.
Fig. 2C illustrates the DBC substrate shown in Fig. 2A in a configuration, in which an insulation layer 20 is placed on the conducting track 6 of the connection area 10. The insulation layer 20 is placed on the conducting track 6 and the proximal part of the L-shaped portion of the conductors 28, 28'.
Fig. 3A illustrates the DBC substrate shown in Fig. 2C in a configuration, in which an additional connection area 10' is placed on top of the insulation layer 20. The additional connection area 10' comprises a conducting track 6' and a cylindrical contact portion 14' protruding therefrom. The additional connection area 10' comprises two conductors 30, 30'. Each of the conductors 30, 30' comprise an L-shaped portion that is attached to a plate-shaped distal portion that is attached and thus electrically connected to the top metal layer 32 of the DBC 36. The attachment may be accomplished by using ultrasonic welding.
Fig. 3B illustrates the assembly (a power module being assembled) illustrated in Fig. 3A after a molding process. The power module 2 illustrated in Fig. 2A comprises a molded surface 8. It can be seen that the two conducting tracks (shown as 6, 6' in Fig. 2B) extend through the molded surface 8 of the power module 2 to form the two connection areas 10, 10', respectively.
The first connection area 10 comprises a plate-shaped portion provided with a hole 18. The second connection area 10', however, comprises a plate-shaped portion and a cylindrical contact portion 14' protruding therefrom. Accordingly, the power module 2 enables a fast, firm and reliable mechanical and electrical connection with corresponding contact elements. A cylindrical male contact element may be inserted into the hole 18, whereas a circular female contact element may receive the cylindrical contact portion 14' to establish a mechanical and electrical connection.
Fig. 4A illustrates a schematic cross-sectional view of a molded semiconductor power module 2 according to the invention. The power module 2 basically corresponds to the one shown in Fig. 3A. The power module 2 comprises a molded surface 8 and a busbar that comprises two laminated conducting tracks 6, 6'. It can be seen that the conducting tracks 6, 6' extend through the molded surface 8 of the power module 2 to form a first connection area 10 and a second connection area 10', respectively. Each connection area 10, 10' is insulated from the other connection area 10, 10' by an insulating mold material 12.
The power module 2 comprises a first contact portion 14 provided with a hole 18. The power module 2 also comprises a second contact portion 14' provided with a cylindrical contact portion 14' protruding from the conducting tracks 6'. The laminated conducting tracks 6, 6' are separated by an insulation layer 20. It may be an advantage that the same mold material 12 is used for molding the power module 2 and to insulate the connection areas 10, 10' from each other. It may be beneficial that the insulation layer 20 is made of a different material than the insulating mold material 12.
Fig. 4B illustrates a schematic cross-sectional view of a portion of a power module 2 according to the invention. The power module 2 comprises a molded surface 8 and a busbar that comprises two laminated conducting tracks 6, 6'. A portion of each of the conducting tracks 6, 6' extend through the molded surface 8 of the power module 2. Hereby, the conducting tracks 6, 6' form a first connection area 10 and a second connection area 10', respectively. Each connection area 10, 10' is insulated from the other connection area 10, 10' by an insulating mold material 12.
The power module 2 comprises a first contact portion 14 provided with a hole 18. The power module 2 comprises a second contact portion 14' provided with a cylindrical contact portion 14' protruding from the conducting tracks 6'. The laminated conducting tracks 6, 6' are separated by an insulation layer 20. It can be seen that the thickness of the insulation layer 20 is smaller than the thickness of any of the adjacent conducting tracks 6, 6'.
Inside the power module 2, at a portion of the conducting track 6, the conducting track 6 is separated from its adjacent insulation layer 20. Moreover, the conducting track 6 extends through a separation portion 4, in which the conducting track 6 is surrounded and separated by the insulating mold material 12.
Fig. 5A illustrates a schematic cross-sectional view of a portion of a power module 2 according to the invention. The power module 2 comprises a molded surface 8 and a busbar that comprises three laminated conducting tracks 6, 6', 6". A portion of each of the conducting tracks 6, 6', 6" extend through the molded surface 8 of the power module 2. Hereby, the conducting tracks 6, 6', 6" form three contact portions 14, 14', 14" protruding from the molded surface 8.
The contact portions 14, 14', 14" extend parallel to each other. Each contact portion 14, 14', 14" extends through a molded portion of the power module 2. In this molded portion, the contact portions 14, 14', 14" are insulated from each other by an insulating mold material 12. The conducting tracks 6, 6', 6" are electrically insulated from each other and separated by an insulation layer 20, 20'. It can be seen that the thickness of the insulation layer 20, 20' is smaller than the thickness of any of the adjacent conducting tracks 6, 6', 6".
The insulation layers 20, 20' extend parallel to the longitudinal axis X of the power module 2. A portion of the conducting tracks 6, 6', 6" also extend parallel to the longitudinal axis X of the power module 2. The distal portion of the conducting tracks 6, 6', 6" constitute contact portions 14, 14', 14" that extend perpendicular to the longitudinal axis X of the power module 2 and parallel to the perpendicular axis Y.
Ridges 16 are provided at the molded surface 8 between the adjacent contact portions 14, 14', 14". It can be seen that the clearance distance D3 between adjacent contact portions 14, 14', 14" is larger than the distance Di between the corresponding adjacent conducting tracks 6, 6', 6" at the portion, at which the insulation layers 20, 20' are arranged.
It can be seen that the thickness of the insulation layer 20, 20' corresponds to the distance Di between the corresponding adjacent conducting tracks 6, 6', 6" at the portion, at which the insulation layer 20, 20' is arranged.
The distal portion of the contact portions 14, 14', 14" are separated from each other to such an extent that the clearance distance D3 between adjacent contact portions 14, 14', 14" is at least 4 mm.
Since the distal portion of the contact portions 14, 14', 14" extend parallel to each other, the distance D2 between the straight distal portion of adjacent contact portion 14', 14" inside the mold material 12 corresponds to the distance D3 between the straight distal portion of adjacent contact portion 14', 14" that protrudes from the molded surface 8.
Fig. 5B illustrates a close-up view of a portion of the ridges of the power module shown in Fig. 5A. The creepage distance L should be measured by following the arced path along the ridges.
Fig. 5C illustrates a perspective view of a portion of a molded semiconductor power module 2 according to the invention. The power module 2 comprises a first conducting track 6 having an L-shaped distal portion. A hole 18 is provided in the most distal part of the conducting track 6 that constitutes a contact portion 14 protruding from the molded surface 8 of the power module 2.
The power module 2 comprises a second conducting track 6' having an L-shaped distal portion. A hole 18 is provided in the most distal part of the second conducting track 6' that constitutes a contact portion 14'. Moreover, the contact portion 14' protrudes from the opposite side of the molded surface 8 than the first contact portion 14.
An insulation layer (not seen) is provided between the conducting tracks 6, 6'. Accordingly, the conducting tracks 6, 6' are laminated. The contour of the mold material 12 is indicated by dotted lines.
Fig. 6 illustrates an assembly (a power module being assembled) similar to that shown in Fig. 3B. As in Fig. 3B, the first connection area 10 comprises a plate-shaped portion provided with a hole 18. The second connection area 10', however, comprises a plate-shaped portion and a cylindrical contact portion 14' protruding therefrom. Accordingly, the power module 2 enables a fast, firm and reliable mechanical and electrical connection with corresponding contact elements. A cylindrical male contact element may be inserted into the hole 18, whereas a circular female contact element may receive the cylindrical contact portion 14' to establish a mechanical and electrical connection. In the embodiment shown in Fig. 6 the cylindrical contact portion 14' is threaded to allow a bolted connection.
Fig. 7 again illustrates an assembly (a power module being assembled) similar to that shown in Fig. 3B. Here, however, both the first connection area 10 and the second connection area 10' plate-shaped portions and a cylindrical contact portion 14' protruding therefrom. Accordingly, the power module 2 enables a fast, firm and reliable mechanical and electrical connection with corresponding contact elements. A circular female contact element may receive the cylindrical contact portions 14' to establish a mechanical and electrical connection. In the embodiment shown in Fig. 7, both of the cylindrical contact portions 14' are threaded to allow a bolted connection.
List of reference numerals
2 Power module
4 Separation portion
6, 6', 6" Conducting tracks (e.g. lead frame)
8 Molded surface
10, 10', 10" Connection area
12 Mold material
14, 14', 14" Contact portion
16 Ridge
18 Hole
20, 20' Insulation layer
22 Conducting layer
24 Substrate (e.g. ceramic substrate)
25 Hole in the conducting layer
26 Hole in the insulating foil
28, 28' Conductor
30, 30' Conductor
32, 32' Metal layer
34 Insulating foil
36 Direct bonded copper (DBC) substrate
X, Y Axis
Di Thickness
D2 Distance
D3 Clearance distance
L Creepage distance

Claims

Claims
1. A molded semiconductor power module (2) comprising a busbar that comprises at least two laminated conducting tracks (6, 6', 6"), wherein at least two of the conducting tracks (6, 6', 6") extend through the molded surface (8) of the power module (2) to form connection areas (10, 10', 10"), characterised in that each connection area (10, 10', 10") is insulated from the other connection area(s) (10, 10', 10") by an insulating mold material (12).
2. A power module (2) according to claim 1, characterised in that the same mold material (12) is used for molding the power module (2) and to insulate the connection area(s) (10, 10', 10") from each other.
3. A power module (2) according to claim 1 or 2, characterised in that an insulation layer (20, 20') made of a different material than the insulating mold material (12) is provided between the conducting tracks (6, 6').
4. A power module (2) according to one of the preceding claims, characterised in that the clearance distance (D3) between adjacent connection areas (10, 10', 10") is larger than the distance (Di) between the corresponding adjacent conducting tracks (6, 6', 6") at the portion, at which the insulation layer (20, 20') is arranged.
5. A power module (2) according to claim 4, characterised in that the thickness of the insulation layer (20, 20') corresponds to the distance (Di) between the corresponding adjacent conducting tracks (6, 6', 6") at the portion, at which the insulation layer (20, 20') is arranged.
6. A power module (2) according to one of the preceding claims, characterised in that the distal portion of the connection areas (10, 10', 10") are separated to such an extent that the clearance distance (D3) between adjacent connection areas (10, 10', 10") is at least 4 mm.
7. A power module (2) according to one of the preceding claims, characterised in that a contact portion (14, 14', 14") is provided in each connection area (10, 10', 10") and that the contact portions (14, 14', 14) extend parallel or perpendicular to each other.
8. A power module (2) according to one of the preceding claims 3-7, characterised in that inside the power module (2) at least one of the conducting tracks (6, 6', 6") is separated from its adjacent insulation layer (20, 20') and that the at least one conducting track (6, 6', 6") extends through a separation portion (4), in which the at least one conducting track (6, 6', 6") is surrounded and separated by the insulating mold material (12).
9. A power module (2) according to claim 8, characterised in that inside the power module (2) all the conducting tracks (6, 6', 6") are separated from their adjacent insulation layer (20, 20') and that the conducting tracks (6, 6', 6") extend through a separation portion (4), in which each of the conducting track (6, 6', 6") is surrounded and separated by the insulating mold material (12).
10. A power module (2) according to one of the preceding claims, characterised in that a cylindrical contact portion (14') protrudes from and extends perpendicular to at least one of the conducting tracks (6, 6', 6").
11. A power module (2) according to claim 10, characterised in that the cylindrical portion (14') is threaded to allow a bolted connection.
12. A method for manufacturing a molded semiconductor power module (2) comprising a busbar that comprises at least two laminated conducting tracks (6, 6', 6"), wherein the method comprises the steps of: a) attaching a conducting layer (e.g. a DC-link layer) to a substrate (24); b) attaching a plurality of semiconductors to the substrate; c) electrically connecting the semiconductors to the DC link layer; d) attaching a busbar that comprises at least two laminated conducting tracks (6, 6', 6") to the substrate and e) molding the module by using an insulating mold material (12), wherein at least two of the conducting tracks (6, 6', 6") extend through the molded surface (8) of the power module (2) to form connection areas (10, 10', 10"), wherein each connection area (10, 10', 10") is insulated from the other connection area(s) (10, 10', 10") by the insulating mold material (12).
13. A method according to claim 12, wherein the substrate is a ceramic substrate, wherein the method comprises the steps of providing the busbar by placing an insulating layer between a first conducting track (6) and a second conducting track (6').
14. A method according to claim 13, wherein the first conducting track (6) comprises a plate-shaped portion constituting a contact portion (14) provided with a hole (18).
15. A method according to claim 13 or 14, wherein the second conducting track (6') comprises a plate-shaped portion and a cylindrical contact portion (14') protruding therefrom.
16. A method according to claim 15, wherein the cylindrical portion (14') is threaded to allow a bolted connection.
17. A method according to one of the preceding claims 12-16 wherein the semiconductors are transistors.
18. A method according to one of the preceding claims 12-17 wherein the substrate (24) is a ceramic substrate.
19. A method according to one of the preceding claims 12-18 wherein the transistors are attached to the ceramic substrate (24) by means of a sintering process.
PCT/EP2021/075247 2020-09-16 2021-09-14 Molded resin power module WO2022058313A1 (en)

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