WO2022057197A1 - 硅基麦克风装置及电子设备 - Google Patents

硅基麦克风装置及电子设备 Download PDF

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Publication number
WO2022057197A1
WO2022057197A1 PCT/CN2021/075870 CN2021075870W WO2022057197A1 WO 2022057197 A1 WO2022057197 A1 WO 2022057197A1 CN 2021075870 W CN2021075870 W CN 2021075870W WO 2022057197 A1 WO2022057197 A1 WO 2022057197A1
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Prior art keywords
silicon
based microphone
differential
microphone
chip
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PCT/CN2021/075870
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English (en)
French (fr)
Inventor
王云龙
吴广华
蓝星烁
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通用微(深圳)科技有限公司
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Application filed by 通用微(深圳)科技有限公司 filed Critical 通用微(深圳)科技有限公司
Priority to JP2023517708A priority Critical patent/JP2023541673A/ja
Priority to US18/026,363 priority patent/US20230370784A1/en
Publication of WO2022057197A1 publication Critical patent/WO2022057197A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/32—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only
    • H04R1/326—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only for microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials

Definitions

  • the present application relates to the technical field of acoustic-electrical conversion, and in particular, the present application relates to a silicon-based microphone device and electronic equipment.
  • the silicon-based microphone chip in the microphone vibrates by the acquired sound wave, and the vibration brings about a capacitance change that can form an electrical signal, thereby converting the sound wave into an electrical signal for output.
  • the noise processing of the existing microphone may not be ideal, which affects the quality of the output audio signal.
  • the present application proposes a silicon-based microphone device and electronic equipment to solve the technical problems in the prior art that the existing microphones are not ideal for noise processing and affect the quality of output audio signals.
  • an embodiment of the present application provides a silicon-based microphone device, including:
  • the circuit board is provided with at least two sound inlet holes
  • a shielding cover which is closed to one side of the circuit board to form an acoustic cavity
  • At least two differential silicon-based microphone chips are arranged on one side of the circuit board and are located in the sound cavity; the back cavity of each differential silicon-based microphone chip is communicated with the sound inlet hole one-to-one;
  • the spacer is located in the acoustic cavity, and isolates the acoustic cavity from sub-acoustic cavities corresponding to at least part of the adjacent back cavity of the differential silicon-based microphone chip.
  • an embodiment of the present application provides an electronic device, including: the silicon-based microphone device provided in the first aspect.
  • the silicon-based microphone device adopts a sound pickup structure of at least two differential silicon-based microphone chips, and the back cavity of each differential silicon-based microphone chip and the sound inlet hole are one One-to-one connection can make the same source sound waves act on each differential silicon-based microphone chip, or make different source sound waves act on the corresponding differential silicon-based microphone chips, that is, to realize multiple acquisition of the same source sound waves or different source sound waves. Then, the mixed electrical signals are further processed with subsequent means to achieve noise reduction and improve the quality of the output audio signal;
  • the acoustic cavity of the silicon-based microphone device is formed by the shielding cover being closed on one side of the circuit board, and the isolation member isolates the acoustic cavity from the sub-acoustic cavity corresponding to the back cavity of at least part of the adjacent differential silicon-based microphone chip, so that It can effectively reduce the probability or intensity of the sound wave entering the back cavity of each differential silicon-based microphone chip to continue to propagate in the sound cavity of the silicon-based microphone device, reduce the interference caused by the sound wave to other differential silicon-based microphone chips, and effectively improve each differential type.
  • the pickup accuracy of the microphone chip improves the quality of the audio signal output by the silicon-based microphone device.
  • FIG. 1 is a schematic structural diagram of a silicon-based microphone device according to an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of a differential silicon-based microphone chip in a silicon-based microphone device provided by an embodiment of the present application;
  • FIG. 3 is a schematic diagram of an electrical connection structure of two differential silicon-based microphone chips in a silicon-based microphone device provided by an embodiment of the present application;
  • FIG. 4 is a schematic diagram of another electrical connection structure of two differential silicon-based microphone chips in a silicon-based microphone device provided by an embodiment of the present application.
  • 300-differential silicon-based microphone chip 300a-first differential silicon-based microphone chip; 300b-second differential silicon-based microphone chip;
  • 301 the first microphone structure
  • 301a the first microphone structure of the first differential silicon-based microphone chip
  • 301b the first microphone structure of the second differential silicon-based microphone chip
  • 302 the second microphone structure
  • 302a the second microphone structure of the first differential silicon-based microphone chip
  • 302b the second microphone structure of the second differential silicon-based microphone chip
  • 303-back cavity 303-back cavity; 303a-back cavity of the first differential silicon-based microphone chip; 303b-back cavity of the second differential silicon-based microphone chip;
  • 310-upper back plate 310a-first upper back plate; 310b-second upper back plate;
  • 320-lower back plate 320a-first lower back plate; 320b-second lower back plate;
  • 330-semiconductor diaphragm 330a-first semiconductor diaphragm; 330b-second semiconductor diaphragm;
  • 331-semiconductor diaphragm electrode 331a-semiconductor diaphragm electrode of the first semiconductor diaphragm; 331b-semiconductor diaphragm electrode of the second semiconductor diaphragm;
  • 340-silicon substrate 340a-first silicon substrate; 340b-second silicon substrate;
  • the inventor of the present application has conducted research and found that with the popularization of IOT (The Internet of Things, Internet of Things) devices such as smart speakers, it is not easy for users to use voice commands on smart devices that are making sounds.
  • IOT The Internet of Things
  • the functional speaker playing music issues voice commands such as interrupt, wake up, or use the hands-free mode of the mobile phone (ie hands-free operation) to communicate.
  • Users often need to get as close to the IOT device as possible, interrupt the playing music with a special wake-up word, and then perform human-computer interaction.
  • IOT device is in use, it is playing music or making sound through the speaker, which causes the body to vibrate, and this kind of vibration is picked up by the microphone on the IOT device, so that the echo can be canceled. of poor results.
  • This phenomenon is particularly evident in smart home products with large vibrations, such as mobile phones playing music, TWS (True Wireless Stereo) headphones, sweeping robots, smart air conditioners, and smart range hoods.
  • the inventors of the present application have conducted research and found that if a silicon-based microphone device with multiple microphone chips is used, noise reduction can be effectively achieved.
  • the inventor of the present application also noticed that if the energy of the sound waves received by the multiple microphone chips is inconsistent, the sound waves with higher energy may continue to propagate in the sound cavity of the silicon-based microphone device, causing interference to other microphone chips (the smaller the volume of the sound cavity, the The more obvious the interference is), which will reduce the sound pickup accuracy of other microphone chips, thereby affecting the quality of the audio signal output by the silicon-based microphone device.
  • the silicon-based microphone device and electronic device provided by the present application aim to solve the above technical problems in the prior art.
  • An embodiment of the present application provides a silicon-based microphone device.
  • the schematic structural diagram of the silicon-based microphone device is shown in FIG. 1 , and includes: a circuit board 100 , a shielding case 200 , at least two differential silicon-based microphone chips 300 and an isolation member 500.
  • the circuit board 100 is provided with at least two sound inlet holes.
  • the shielding case 200 covers one side of the circuit board 100 to form an acoustic cavity 210 .
  • At least two differential silicon-based microphone chips 300 are disposed on one side of the circuit board 100 and located in the acoustic cavity 210 .
  • the back cavity 303 of each differential silicon-based microphone chip 300 communicates with the sound inlet hole in a one-to-one correspondence.
  • the spacer 500 is located in the acoustic cavity 210, and isolates the acoustic cavity 210 from the sub-acoustic cavity 210 corresponding to the back cavity 303 of at least part of the adjacent differential silicon-based microphone chip 300.
  • the silicon-based microphone device adopts the sound pickup structure of at least two differential silicon-based microphone chips 300 . It should be noted that the silicon-based microphone device in FIG. 1 is only exemplified by two differential silicon-based microphone chips. 300.
  • the silicon-based microphone device adopts the sound pickup structure of at least two differential silicon-based microphone chips 300.
  • the back cavity 303 of each differential silicon-based microphone chip 300 and the sound inlet holes (the first sound inlet hole 110a and the second sound inlet hole 110b ) are connected in a one-to-one correspondence, so that the homologous sound waves can act on each differential silicon-based microphone chip 300, or different source sound waves can act on the corresponding differential silicon-based microphone chips 300, that is, multiple acquisitions of homologous sound waves can be realized. Or separate acquisition of sound waves from different sources, and further processing of the mixed electrical signals with subsequent means to achieve noise reduction and improve the quality of the output audio signal.
  • the acoustic cavity 210 is formed by the shielding cover 200 covering one side of the circuit board 100 of the silicon-based microphone device, and the isolation member 500 isolates the acoustic cavity 210 from the back cavity of at least part of the adjacent differential silicon-based microphone chip 300 .
  • 303 corresponds to the sub-acoustic cavity 210, which can effectively reduce the probability or intensity of the sound wave entering the back cavity 303 of each differential silicon-based microphone chip 300 to continue to propagate in the acoustic cavity 210 of the silicon-based microphone device, and reduce the impact of the sound wave on other differential silicon-based microphones.
  • the interference caused by the microphone chip 300 effectively improves the sound pickup accuracy of each differential microphone chip 300, thereby improving the quality of the audio signal output by the silicon-based microphone device.
  • the differential silicon-based microphone chip 300 is fixedly connected to the circuit board 100 through silica gel.
  • a relatively closed acoustic cavity 210 is enclosed between the shielding cover 200 and the circuit board 100 .
  • the shielding cover 200 includes a metal shell, and the metal shell is electrically connected to the circuit board 100 .
  • the shielding case 200 is fixedly connected to one side of the circuit board 100 through solder paste or conductive glue.
  • the circuit board 100 includes a PCB (Printed Circuit Board, printed circuit board 100 ).
  • PCB printed Circuit Board, printed circuit board 100 .
  • the spacer 500 may adopt a single-plate structure, a cylindrical structure, or a honeycomb structure.
  • one end of the isolator 500 in the embodiment of the present application extends toward the shielding case 200 , and the other end of the isolator 500 extends at least until the differential silicon-based microphone chip 300 is away from the circuit board 100 . side.
  • one end of the spacer 500 extends toward the shielding case 200 , and the other end extends at least to the side of the differential silicon-based microphone chip 300 away from the circuit board 100 .
  • the structure of 300, together with the spacer 500, constitutes a sub-acoustic cavity 210 with a certain degree of enclosure, that is, to form a certain enclosure for the sound waves passing through the back cavity 303 of the differential silicon-based microphone chip 300, thereby reducing the amount of sound waves entering the silicon-based microphone device.
  • the probability or intensity of the continuous propagation in the acoustic cavity 210 can reduce the interference of sound waves to other differential silicon-based microphone chips 300, effectively improve the sound pickup accuracy of each differential silicon-based microphone chip 300, and further improve the audio output of the silicon-based microphone device. the quality of the signal.
  • one end of the above-mentioned isolator 500 in the embodiment of the present application is connected to the shielding case 200 . That is, the adjacent sub-acoustic cavities 210 isolated by the spacer 500 are completely cut off on the side close to the shield 200, which can strengthen the isolation between the adjacent sub-acoustic cavities 210, and can further reduce the impact of acoustic waves on other differential silicon-based microphone chips.
  • the interference caused by 300 can effectively improve the sound pickup accuracy of each differential silicon-based microphone chip 300, thereby improving the quality of the audio signal output by the silicon-based microphone device.
  • the other end of the isolator 500 in the embodiment of the present application is connected to one side of the circuit board 100 . That is, the adjacent sub-acoustic cavities 210 isolated by the spacer 500 are completely isolated on the side close to the circuit board 100, which can strengthen the isolation between the adjacent sub-acoustic cavities 210, and can further reduce the impact of sound waves on other differential silicon-based microphone chips.
  • the interference caused by 300 can effectively improve the sound pickup accuracy of the differential silicon-based microphone chip 300, thereby improving the quality of the audio signal output by the silicon-based microphone device.
  • the present application consider that the multi-microphone chips in the silicon-based microphone device need to cooperate to realize noise reduction. To this end, the present application provides the following possible implementation for the electrical connection of each differential silicon-based microphone chip:
  • the number of at least two differential silicon-based microphone chips 300 in the embodiment of the present application is an even number, and in every two differential silicon-based microphone chips 300 , the first microphone structure of one differential silicon-based microphone chip 300 301 , electrically connected to the second microphone structure 302 of another differential silicon-based microphone chip 300 , the second microphone structure 302 of one differential silicon-based microphone chip 300 is electrically connected to the first microphone of the other differential silicon-based microphone chip 300 Structure 301 is electrically connected.
  • a microphone structure on the side of the differential silicon-based microphone chip 300 away from the circuit board 100 is defined as the first microphone structure 301, and the differential silicon-based microphone chip 300 close to the circuit is defined as the first microphone structure 301 .
  • One microphone structure on one side of the board 100 is defined as the second microphone structure 302 .
  • the first microphone structure 301 and the second microphone structure 302 in the differential silicon-based microphone chip 300 respectively generate electrical signals with the same amplitude and opposite sign. Therefore, in this embodiment of the present application, the first microphone structure 301a of the first differential silicon-based microphone chip 300a is electrically connected to the second microphone structure 302b of the second differential silicon-based microphone chip 300b, and the first differential silicon-based microphone chip 300a is electrically connected.
  • the second microphone structure 302a is electrically connected to the first microphone structure 301b of the second differential silicon-based microphone chip 300b, and can connect the mixed electrical signal generated by the first differential silicon-based microphone chip 300a with the second differential silicon-based microphone
  • the mixed electrical signals with the same variation magnitude and opposite sign generated by the chip 300b are superimposed, so as to weaken or cancel the homologous noise signal in the mixed electrical signal by means of physical noise reduction, thereby improving the quality of the audio signal.
  • the differential silicon-based microphone chip 300 of the embodiment of the present application includes an upper back plate 310 , a semiconductor diaphragm 330 and a lower back plate 320 that are stacked and spaced apart.
  • the upper back plate 310 and the semiconductor diaphragm 330 constitute the main body of the first microphone structure 301 .
  • the semiconductor diaphragm 330 and the lower back plate 320 constitute the main body of the second microphone structure 302 .
  • the parts of the upper back plate 310 and the lower back plate 320 corresponding to the sound inlet holes are respectively provided with a plurality of air flow holes.
  • gaps there are gaps, such as air gaps, between the upper back plate 310 and the semiconductor diaphragm 330 and between the semiconductor diaphragm 330 and the lower back plate 320 .
  • the upper back plate 310 and the semiconductor diaphragm 330 constitute the main body of the first microphone structure 301 .
  • the semiconductor diaphragm 330 and the lower back plate 320 constitute the main body of the second microphone structure 302 .
  • the parts of the upper back plate 310 and the lower back plate 320 corresponding to the sound inlet holes are respectively provided with a plurality of air flow holes.
  • the back plate of the differential silicon-based microphone chip 300 on the side away from the circuit board 100 is defined as the upper back plate 310, and the side of the differential silicon-based microphone chip 300 close to the circuit board 100 is defined as the upper back plate 310.
  • One of the back plates is defined as the lower back plate 320 .
  • the semiconductor diaphragm 330 is shared by the first microphone structure 301 and the second microphone structure 302 .
  • the semiconductor diaphragm 330 can adopt a thinner structure with better toughness, which can be bent and deformed under the action of sound waves; The structure with strong rigidity is not easy to deform.
  • the semiconductor diaphragm 330 may be arranged in parallel with the upper back plate 310 and separated by the upper air gap 313, thereby forming the main body of the first microphone structure 301; the semiconductor diaphragm 330 may be arranged in parallel with the lower back plate 320 and separated by the upper air gap 313.
  • the lower air gap 323 is spaced apart, thereby forming the body of the second microphone structure 302 .
  • an electric field non-conduction
  • the sound wave entering through the sound inlet hole can contact the semiconductor diaphragm 330 through the back cavity 303 and the lower air flow hole 321 on the lower back plate 320 .
  • the semiconductor diaphragm 330 When the sound wave enters the back cavity 303 of the differential silicon-based microphone chip 300 , the semiconductor diaphragm 330 will be deformed by the sound wave, and the deformation will cause the gap between the semiconductor diaphragm 330 and the upper back plate 310 and the lower back plate 320 The change of the gap between the semiconductor diaphragm 330 and the upper back plate 310 will bring about the change of the capacitance between the semiconductor diaphragm 330 and the upper back plate 310, as well as the change of the capacitance between the semiconductor diaphragm 330 and the lower back plate 320, that is, the conversion of sound waves into electrical signals is realized. .
  • a voltage is formed in the gap between the semiconductor diaphragm 330 and the upper back plate 310 . on the electric field.
  • a bias voltage is applied between the semiconductor diaphragm 330 and the lower back plate 320 , a lower electric field will be formed in the gap between the semiconductor diaphragm 330 and the lower back plate 320 .
  • the capacitance change of the first microphone structure 301 and the capacitance change of the second microphone structure 302 have the same magnitude and sign. on the contrary.
  • the semiconductor diaphragm 330 can be made of polysilicon material, and the thickness of the semiconductor diaphragm 330 is not greater than 1 micron, which will also deform under the action of small sound waves, and has high sensitivity; the upper back plate 310 and the lower back plate 320 can be made of materials with relatively strong rigidity and a thickness of several microns, and a plurality of upper air flow holes 311 are etched on the upper back plate 310, and a plurality of lower air holes 321 are etched on the lower back plate 320 . Therefore, when the semiconductor diaphragm 330 is deformed by the action of the sound wave, neither the upper back plate 310 nor the lower back plate 320 will be affected and deformed.
  • the gap between the semiconductor diaphragm 330 and the upper back plate 310 or the lower back plate 320 is respectively several micrometers, that is, in the order of micrometers.
  • every two differential silicon-based microphone chips 300 in the embodiments of the present application include a first differential silicon-based microphone chip 300 a and a second differential silicon-based microphone chip 300 b .
  • the first upper back plate 310a of the first differential silicon-based microphone chip 300a is electrically connected to the second lower back plate 320b of the second differential silicon-based microphone chip 300b for forming a first signal path.
  • the first lower back plate 320a of the first differential silicon-based microphone chip 300a is electrically connected to the second upper back plate 310b of the second differential silicon-based microphone chip 300b for forming a second signal path.
  • the capacitance change of the first microphone structure 301 and the capacitance change of the second microphone structure 302 have the same magnitude and opposite sign.
  • the capacitance changes at the upper back plate 310 of one differential silicon-based microphone chip 300 and the lower back plate 320 of the other differential silicon-based microphone chip 300 have the same magnitude and opposite sign.
  • the mixed electrical signal generated at the first upper back plate 310a of the first differential silicon-based microphone chip 300a and the second lower back plate of the second differential silicon-based microphone chip 300b can weaken or cancel the homologous noise signal in the mixed electrical signal, thereby improving the quality of the first signal.
  • the mixed electrical signal generated at the first lower back plate 320a of the first differential silicon-based microphone chip 300a and the mixed electrical signal generated at the second upper back plate 310b of the second differential silicon-based microphone chip 300b can weaken or cancel the homologous noise signal in the mixed electrical signal, thereby improving the quality of the second signal.
  • the upper back plate electrode 312a of the first upper back plate 310a can be electrically connected with the lower back plate electrode 322b of the second lower back plate 320b through the wire 380 to form the first signal;
  • the lower back plate electrode 322a of the first lower back plate 320a is electrically connected to the upper back plate electrode 312b of the second upper back plate 310b through wires 380 to form a second signal path.
  • the first semiconductor diaphragm 330a of the first differential silicon-based microphone chip 300a of the embodiment of the present application and the second semiconductor of the second differential silicon-based microphone chip 300b The diaphragm 330b is electrically connected, and at least one of the first semiconductor diaphragm 330a and the second semiconductor diaphragm 330b is used for electrical connection with a constant voltage source.
  • the first semiconductor diaphragm 330a of the first differential silicon-based microphone chip 300a is electrically connected to the second semiconductor diaphragm 330b of the second differential silicon-based microphone chip 300b, so that the two differential silicon-based microphone chips 300b can be electrically connected to each other.
  • the semiconductor diaphragm 330 of the base microphone chip 300 has the same potential, that is, the reference for generating electrical signals by the two differential silicon-based microphone chips 300 can be unified.
  • the wires 380 can be electrically connected to the semiconductor diaphragm electrodes 331a of the first semiconductor diaphragm 330a and the semiconductor diaphragm electrodes 331b of the second semiconductor diaphragm 330b, respectively.
  • the semiconductor diaphragms 330 of all the differential silicon-based microphone chips 300 may be electrically connected, so that the reference for the electrical signals generated by the differential silicon-based microphone chips 300 is the same.
  • the silicon-based microphone device further includes a control chip 400 .
  • the control chip 400 is located in the acoustic cavity 210 and is electrically connected to the circuit board 100 .
  • One of the first upper back plate 310 a and the second lower back plate 320 b is electrically connected to a signal input terminal of the control chip 400 .
  • One of the first lower back plate 320 a and the second upper back plate 310 b is electrically connected to the other signal input terminal of the control chip 400 .
  • control chip 400 is used to receive the two-channel signals output by the aforementioned differential silicon-based microphone chips 300 that have been physically denoised. Primary equipment or component output.
  • control chip 400 is fixedly connected to the circuit board 100 through silica gel or red glue.
  • control chip 400 includes an application specific integrated circuit (ASIC, Application Specific Integrated Circuit) chip. Since the audio signal received by the control chip 400 has been physically de-noised, the control chip 400 here does not need to have a differential function, and an ordinary control chip 400 can be used. For different application scenarios, the output signal of the ASIC chip may be single-ended or differential output.
  • ASIC Application Specific Integrated Circuit
  • the differential silicon-based microphone chip 300 includes a silicon substrate 340 .
  • the first microphone structure 301 and the second microphone structure 302 are stacked on one side of the silicon substrate 340 .
  • the silicon substrate 340 has a through hole 341 for forming the back cavity 303 , and the through hole 341 corresponds to the first microphone structure 301 and the second microphone structure 302 .
  • the side of the silicon substrate 340 away from the first microphone structure 301 and the second microphone structure 302 is fixedly connected to the circuit board 100 , and the through hole 341 communicates with the sound inlet hole.
  • the silicon substrate 340 provides a bearing for the first microphone structure 301 and the second microphone structure 302, and the silicon substrate 340 has through holes 341 for forming the back cavity 303, which can facilitate the entry of sound waves into the differential silicon-based microphone chip 300, and can act on the first microphone structure 301 and the second microphone structure 302 respectively, so that the first microphone structure 301 and the second microphone structure 302 generate a differential electrical signal.
  • the differential silicon-based microphone chip 300 further includes patterned: a first insulating layer 350 , a second insulating layer 360 and a third insulating layer 370 .
  • the silicon substrate 340 , the first insulating layer 350 , the lower back plate 320 , the second insulating layer 360 , the semiconductor diaphragm 330 , the third insulating layer 370 and the upper back plate 310 are stacked in sequence.
  • the lower back plate 320 and the silicon substrate 340 are separated by a patterned first insulating layer 350
  • the semiconductor diaphragm 330 and the upper back plate 310 are separated by a patterned second insulating layer 360 .
  • the upper back plate 310 and the semiconductor diaphragm 330 are separated by the patterned third insulating layer 370 to form electrical isolation between the conductive layers, which can avoid short circuits in the conductive layers and reduce signal accuracy.
  • the first insulating layer 350, the second insulating layer 360 and the third insulating layer 370 can all be patterned through an etching process after the overall film formation, and the insulating layer portion corresponding to the area of the through hole 341 is removed and used for preparation.
  • the insulating layer portion of the region of the electrode can all be patterned through an etching process after the overall film formation, and the insulating layer portion corresponding to the area of the through hole 341 is removed and used for preparation.
  • the silicon-based microphone devices in the above-mentioned embodiments of the present application are implemented by using a single diaphragm (eg, semiconductor diaphragm 330 ) and double back electrodes (eg, upper back plate 310 and lower back plate 320 ).
  • the differential silicon-based microphone chip 300 is exemplified.
  • the differential silicon-based microphone chip 300 may be a dual-diaphragm, single-back-pole configuration, or other differential structures in addition to the single-diaphragm and double-back-pole configuration.
  • the present application provides the following another possible implementation for the electrical connection of each differential silicon-based microphone chip:
  • the silicon-based microphone device of the embodiment of the present application further includes a differential control chip.
  • the first microphone structures 301 of all differential silicon-based microphone chips 300 are electrically connected in sequence and then electrically connected to one input terminal of the differential control chip. After all the second microphone structures 302 of the differential silicon-based microphone chips 300 are electrically connected in sequence, they are electrically connected to another input end of the differential control chip.
  • each audio signal is a superimposed signal of each mixed electrical signal (including sound electrical signal and noise electrical signal).
  • Two audio signals with the same amplitude and opposite sign are sent to the differential control chip for differential processing.
  • the increment of the sound electrical signal after superimposition is greater than that of the noise electrical signal to achieve noise removal, thereby reducing the common mode. Noise, improve the signal-to-noise ratio and sound pressure overload point, and then improve the sound quality.
  • each differential silicon-based microphone chip 300 in this embodiment may be the same as the structure of each differential silicon-based microphone chip 300 provided in the foregoing embodiments, and details are not described herein again.
  • an embodiment of the present application provides an electronic device, and the electronic device includes: any one of the silicon-based microphone devices provided in the foregoing embodiments.
  • the electronic device may be a smart home product with large vibration, such as a mobile phone, a TWS (True Wireless Stereo, true wireless stereo) headset, a cleaning robot, a smart air conditioner, and a smart range hood. Since each electronic device adopts the silicon-based microphone device provided by the foregoing embodiments, the principles and technical effects thereof may refer to the foregoing embodiments, and will not be repeated here.
  • TWS Truste Wireless Stereo, true wireless stereo
  • the silicon-based microphone device adopts the sound pickup structure of at least two differential silicon-based microphone chips 300.
  • the back cavity 303 of each differential silicon-based microphone chip 300 is connected to the sound inlet hole one-to-one, so that the homologous sound waves can be homogeneous. Acting on each differential silicon-based microphone chip 300, or making different source sound waves act on the corresponding differential silicon-based microphone chip 300, that is, to realize multiple acquisition of the same source sound wave or separate acquisition of different source sound waves, and then cooperate with subsequent means to Each mixed electrical signal is further processed to achieve noise reduction and improve the quality of the output audio signal.
  • the acoustic cavity 210 of the silicon-based microphone device is formed by covering the shielding cover 200 on one side of the circuit board 100 , and the isolation member 500 isolates the acoustic cavity 210 from the back cavity of at least part of the adjacent differential silicon-based microphone chip 300 .
  • the sub-acoustic cavity 210 corresponding to 303 can effectively reduce the probability or intensity of the sound wave entering the back cavity 303 of each differential silicon-based microphone chip 300 to continue to propagate in the acoustic cavity 210 of the silicon-based microphone device, and reduce the impact of the sound wave on other differential silicon-based microphones.
  • the interference caused by the microphone chip 300 effectively improves the sound pickup accuracy of each differential microphone chip 300, thereby improving the quality of the audio signal output by the silicon-based microphone device.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, a feature defined as “first”, “second” may expressly or implicitly include one or more of that feature. In the description of this application, unless stated otherwise, “plurality” means two or more.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two elements.
  • installed should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two elements.

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  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Circuit For Audible Band Transducer (AREA)
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  • Pressure Sensors (AREA)

Abstract

本申请实施例提供了一种硅基麦克风装置及电子设备。该硅基麦克风装置包括：电路板，开设有至少两个进声孔；屏蔽罩，罩合于电路板的一侧形成声腔；至少两个差分式硅基麦克风芯片，均设置于电路板的一侧，且位于声腔内；各差分式硅基麦克风芯片的背腔与进声孔一一对应地连通；隔离件，位于声腔内，将声腔隔离出与至少部分相邻的差分式硅基麦克风芯片的背腔对应的子声腔。本申请实施例采用至少两个差分式硅基麦克风芯片的拾音结构，可实现降噪、提高输出的音频信号的质量；声腔中的隔离件能够有效降低声波对其他差分式硅基麦克风芯片造成的干扰，有效提高各差分式麦克风芯片的拾音精度，进而提高硅基麦克风装置输出的音频信号的质量。

Description

硅基麦克风装置及电子设备
相关申请的交叉引用
本申请要求于2020年9月17日在国家知识产权局提交的申请号为2020109813347的中国专利申请的优先权，通过引用将上述申请的公开内容整体并入本文。
技术领域
本申请涉及声电转换技术领域，具体而言，本申请涉及一种硅基麦克风装置及电子设备。
背景技术
现有的拾音麦克风在获取声音信号时，通过麦克风中的硅基麦克风芯片受获取的声波作用而产生振动，该振动带来可以形成电信号的电容变化，从而将声波转换成电信号输出。但是，现有的麦克风对噪声的处理可能不理想，影响输出的音频信号的质量。
发明内容
本申请针对现有方式的缺点，提出一种硅基麦克风装置及电子设备，用以解决现有技术存在现有的麦克风对噪声的处理不理想，影响输出的音频信号的质量的技术问题。
第一个方面，本申请实施例提供了一种硅基麦克风装置，包括：
电路板，开设有至少两个进声孔；
屏蔽罩，罩合于电路板的一侧形成声腔；
至少两个差分式硅基麦克风芯片，均设置于电路板的一侧，且位于声腔内；各差分式硅基麦克风芯片的背腔与进声孔一一对应地连通；
隔离件，位于声腔内，将声腔隔离出与至少部分相邻的差分式硅基麦克风芯片的背腔对应的子声腔。
第二个方面，本申请实施例提供了一种电子设备，包括：如第一个方面提供的硅基麦克风装置。
本申请实施例提供的技术方案带来的有益技术效果包括：硅基麦克风装置采用至少两个差分式硅基麦克风芯片的拾音结构，各差分式硅基麦克风芯片的背腔与进声孔一一对应地连通，可以使得同源声波均作用到各差分式硅基麦克风芯片，或使得不同源声波作用到对应的差分式硅基麦克风芯片，即实现对同源声波的多重采集或不同源声波的分别采集，再配合后续手段将各混合电信号进一步处理，即可实现降噪、提高输出的音频信号的质量；
并且，硅基麦克风装置的由屏蔽罩罩合于电路板的一侧而形成声腔中，隔离件将声腔隔离出与至少部分相邻的差分式硅基麦克风芯片的背腔对应的子声腔，这样能够有效降低进入各差分式硅基麦克风芯片的背腔的声波在硅基麦克风装置的声腔内继续传播的概率或强度，降低声波对其他差分式硅基麦克风芯片造成的干扰，有效提高各差分式麦克风芯片的拾音精度，进而提高硅基麦克风装置输出的音频信号的质量。
本申请附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本申请的实践了解到。
附图说明
本申请上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为本申请实施例提供的一种硅基麦克风装置的结构示意图；
图2为本申请实施例提供的一种硅基麦克风装置中差分式硅基麦克风芯片的结构示意图；
图3为本申请实施例提供的一种硅基麦克风装置中两差分式硅基麦克风芯片的一种电连接结构示意图；
图4为本申请实施例提供的一种硅基麦克风装置中两差分式硅基麦 克风芯片的另一种电连接结构示意图。
图中：
100-电路板；110a-第一进声孔；110b-第二进声孔；
200-屏蔽罩；210-声腔；
300-差分式硅基麦克风芯片；300a-第一差分式硅基麦克风芯片；300b-第二差分式硅基麦克风芯片；
301-第一麦克风结构；301a-第一差分式硅基麦克风芯片的第一麦克风结构；301b-第二差分式硅基麦克风芯片的第一麦克风结构；
302-第二麦克风结构；302a-第一差分式硅基麦克风芯片的第二麦克风结构；302b-第二差分式硅基麦克风芯片的第二麦克风结构；
303-背腔；303a-第一差分式硅基麦克风芯片的背腔；303b-第二差分式硅基麦克风芯片的背腔；
310-上背极板；310a-第一上背极板；310b-第二上背极板；
311-上气流孔；
312-上背极板电极；312a-第一上背极板的上背极板电极；312b-第二上背极板的上背极板电极；
313-上气隙；
320-下背极板；320a-第一下背极板；320b-第二下背极板；
321-下气流孔；
322-下背极板电极；322a-第一下背极板的下背极板电极；322b-第二下背极板的下背极板电极；
323-下气隙；
330-半导体振膜；330a-第一半导体振膜；330b-第二半导体振膜；
331-半导体振膜电极；331a-第一半导体振膜的半导体振膜电极；331b-第二半导体振膜的半导体振膜电极；
340-硅基板；340a-第一硅基板；340b-第二硅基板；
341-通孔；
350-第一绝缘层；
360-第二绝缘层；
370-第三绝缘层；
380-导线；
400-控制芯片；
500-隔离件。
具体实施方式
下面详细描述本申请，本申请的实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的部件或具有相同或类似功能的部件。此外，如果已知技术的详细描述对于示出的本申请的特征是不必要的，则将其省略。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能解释为对本申请的限制。
本技术领域技术人员可以理解，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)，具有与本申请所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语，应该被理解为具有与现有技术的上下文中的意义一致的意义，并且除非像这里一样被特定定义，否则不会用理想化或过于正式的含义来解释。
本技术领域技术人员可以理解，除非特意声明，这里使用的单数形式“一”、“一个”、“所述”和“该”也可包括复数形式。应该进一步理解的是，本申请的说明书中使用的措辞“包括”是指存在所述特征、整数、元件和/或组件，但是并不排除存在或添加一个或多个其他特征、整数、元件、组件和/或它们的组。应该理解，当我们称元件被“连接”或“耦接”到另一元件时，它可以直接连接或耦接到其他元件，或者也可以存在中间元件。此外，这里使用的“连接”或“耦接”可以包括无线连接或无线耦接。这里使用的措辞“和/或”包括一个或更多个相关联的列出项的全部或任一单元和全部组合。
本申请的发明人进行研究发现，随着智能音箱等IOT(The Internet of  Things，物联网)设备的普及，用户要对正在发声的智能设备使用语音命令不是一件容易的事情，例如：对正在播放音乐的职能音箱发出打断、唤醒等语音指令，或是利用手机的免提模式(即hands-free operation)进行通话交流时。用户往往需要尽量靠近IOT设备，用专设的唤醒词打断正在播放的音乐，随后再进行人机交互。在这些典型的语音交互场景中，由于IOT设备在使用中，因为自身在播放音乐或通过扬声器发声，造成了机身的振动，而这类振动又被IOT设备上的麦克风所拾取，使得回声消除的效果不佳。这个现象，在播放着音乐的手机、TWS(True Wireless Stereo，真正无线立体声)耳机、扫地机器人、智能空调、智能油烟机等振动较大的智能家居产品上表现得尤其明显。
本申请的发明人进行研究还发现，若采用多麦克风芯片的硅基麦克风装置，可以有效实现降噪。本申请的发明人同时注意到，若多麦克风芯片接收的声波能量不一致，能量较大的声波可能会在硅基麦克风装置的声腔内继续传播，对其他麦克风芯片造成干扰(声腔的容积越小，该干扰越明显)，这会降低其他麦克风芯片的拾音精度，进而影响硅基麦克风装置输出的音频信号的质量。
本申请提供的硅基麦克风装置及电子设备，旨在解决现有技术的如上技术问题。
下面以具体地实施例对本申请的技术方案以及本申请的技术方案如何解决上述技术问题进行详细说明。
本申请实施例提供了一种硅基麦克风装置，该硅基麦克风装置的结构示意图如图1所示，包括：电路板100，屏蔽罩200，至少两个差分式硅基麦克风芯片300和隔离件500。
电路板100开设有至少两个进声孔。
屏蔽罩200罩合于电路板100的一侧形成声腔210。
至少两个差分式硅基麦克风芯片300均设置于电路板100的一侧，且位于声腔210内。各差分式硅基麦克风芯片300的背腔303与进声孔一一对应地连通。
隔离件500位于声腔210内，将声腔210隔离出与至少部分相邻的差 分式硅基麦克风芯片300的背腔303对应的子声腔210。
在本实施例中，硅基麦克风装置采用至少两个差分式硅基麦克风芯片300的拾音结构，需要说明的是，图1中的硅基麦克风装置仅示例为两个差分式硅基麦克风芯片300。
硅基麦克风装置采用至少两个差分式硅基麦克风芯片300的拾音结构，各差分式硅基麦克风芯片300的背腔303与进声孔(第一进声孔110a和第二进声孔110b)一一对应地连通，可以使得同源声波均作用到各差分式硅基麦克风芯片300，或使得不同源声波作用到对应的差分式硅基麦克风芯片300，即实现对同源声波的多重采集或不同源声波的分别采集，再配合后续手段将各混合电信号进一步处理，即可实现降噪、提高输出的音频信号的质量。
并且，硅基麦克风装置的由屏蔽罩200罩合于电路板100的一侧而形成声腔210中，隔离件500将声腔210隔离出与至少部分相邻的差分式硅基麦克风芯片300的背腔303对应的子声腔210，这样能够有效降低进入各差分式硅基麦克风芯片300的背腔303的声波在硅基麦克风装置的声腔210内继续传播的概率或强度，降低声波对其他差分式硅基麦克风芯片300造成的干扰，有效提高各差分式麦克风芯片300的拾音精度，进而提高硅基麦克风装置输出的音频信号的质量。
可选地，差分式硅基麦克风芯片300通过硅胶与电路板100固定连接。
屏蔽罩200与电路板100之间围合成相对封闭的声腔210。为了起到对声腔210内的各差分式硅基麦克风芯片300等器件屏蔽电磁干扰的作用，可选地，屏蔽罩200包括金属外壳，金属外壳与电路板100电连接。
可选地，屏蔽罩200通过锡膏或导电胶与电路板100的一侧固定连接。
可选地，电路板100包括PCB(Printed Circuit Board，印制电路板100)。
可选地，隔离件500可以采用单板状结构，也可以采用筒状结构，还可以采用蜂窝状结构。
在一些可能的实施方式中，如图1所示，本申请实施例的隔离件500的一端向屏蔽罩200延伸，隔离件500的另一端至少延伸至差分式硅基麦 克风芯片300远离电路板100的一侧。
在本实施例中，隔离件500的一端向屏蔽罩200延伸，另一端至少延伸至差分式硅基麦克风芯片300远离电路板100的一侧，这样可以借助屏蔽罩200以及差分式硅基麦克风芯片300的结构，与隔离件500一起构成具有一定包围度的子声腔210，即对通过差分式硅基麦克风芯片300的背腔303的声波形成一定的包围，进而可以降低进入声波在硅基麦克风装置的声腔210内继续传播的概率或强度，降低声波对其他差分式硅基麦克风芯片300造成的干扰，有效提高各差分式硅基麦克风芯片300的拾音精度，进而提高硅基麦克风装置输出的音频信号的质量。
可选地，如图1所示，本申请实施例的上述隔离件500的一端与屏蔽罩200连接。即，由隔离件500隔离出的相邻子声腔210，靠近屏蔽罩200一侧完全被隔断，可以强化相邻子声腔210之间的隔离度，可以进一步降低声波对其他差分式硅基麦克风芯片300造成的干扰，有效提高各差分式硅基麦克风芯片300的拾音精度，进而提高硅基麦克风装置输出的音频信号的质量。
可选地，本申请实施例的隔离件500的另一端与电路板100的一侧连接。即，由隔离件500隔离出的相邻子声腔210，靠近电路板100一侧完全被隔断，可以强化相邻子声腔210之间的隔离度，可以进一步降低声波对其他差分式硅基麦克风芯片300造成的干扰，有效提高差分式硅基麦克风芯片300的拾音精度，进而提高硅基麦克风装置输出的音频信号的质量。
本申请的发明人考虑到，硅基麦克风装置内的多麦克风芯片需要协作实现降噪。为此，本申请为各差分式硅基麦克风芯片的电连接方式提供如下一种可能的实现方式：
如图3所示，本申请实施例的至少两个差分式硅基麦克风芯片300为偶数个，每两个差分式硅基麦克风芯片300中，一个差分式硅基麦克风芯片300的第一麦克风结构301，与另一个差分式硅基麦克风芯片300的第二麦克风结构302电连接，一个差分式硅基麦克风芯片300的第二麦克风结构302，与另一个差分式硅基麦克风芯片300的第一麦克风结构301电 连接。
在本实施例中，为便于描述，本文将差分式硅基麦克风芯片300中远离电路板100的一侧的一个麦克风结构定义为第一麦克风结构301，将差分式硅基麦克风芯片300中靠近电路板100的一侧的一个麦克风结构定义为第二麦克风结构302。
由于在声波的作用下，差分式硅基麦克风芯片300中的第一麦克风结构301与第二麦克风结构302会分别产生变化量幅度相同、符号相反的电信号。因此本申请实施例将第一差分式硅基麦克风芯片300a的第一麦克风结构301a，与第二差分式硅基麦克风芯片300b的第二麦克风结构302b电连接，第一差分式硅基麦克风芯片300a的第二麦克风结构302a，与第二差分式硅基麦克风芯片300b的第一麦克风结构301b电连接，可以将第一差分式硅基麦克风芯片300a生成的混合电信号与第二差分式硅基麦克风芯片300b生成的变化量幅度相同、符号相反的混合电信号进行叠加，从而实现通过物理降噪的方式削弱或抵消混合电信号中的同源噪音信号，进而提高音频信号的质量。
在一些可能的实施方式中，如图2所示，本申请实施例的差分式硅基麦克风芯片300包括层叠并间隔设置的上背极板310、半导体振膜330和下背极板320。
上背极板310和半导体振膜330构成第一麦克风结构301的主体。半导体振膜330和下背极板320构成第二麦克风结构302的主体。
上背极板310和下背极板320分别与进声孔对应的部分均设有若干气流孔。
具体地，上背极板310和半导体振膜330之间、以及半导体振膜330和下背极板320之间均具有间隙，例如气隙。
上背极板310和半导体振膜330构成第一麦克风结构301的主体。半导体振膜330和下背极板320构成第二麦克风结构302的主体。
上背极板310和下背极板320分别与进声孔对应的部分均设有若干气流孔。
为便于描述，本文将差分式硅基麦克风芯片300中远离电路板100的一侧的一个背极板定义为上背极板310，将差分式硅基麦克风芯片300中靠近电路板100的一侧的一个背极板定义为下背极板320。
在本实施例中，半导体振膜330被第一麦克风结构301和第二麦克风结构302共享。半导体振膜330可采用较薄、韧性较好的结构，可以在声波的作用下发生弯曲形变；上背极板310和下背极板320均可采用比半导体振膜330的厚度大许多、且刚性较强的结构，不易发生形变。
具体地，半导体振膜330可以与上背极板310平行布置并由上气隙313隔开，从而形成第一麦克风结构301的主体；半导体振膜330可以与下背极板320平行布置并由下气隙323隔开，从而形成第二麦克风结构302的主体。可以理解的是，半导体振膜330与上背极板310之间、以及半导体振膜330与下背极板320之间均用于形成电场(不导通)。由进声孔进入的声波可以通过背腔303、下背极板320上的下气流孔321与半导体振膜330接触。
当声波进入差分式硅基麦克风芯片300的背腔303时，半导体振膜330受声波的作用会发生形变，该形变会引起半导体振膜330与上背极板310、下背极板320之间的间隙发生变化，会带来半导体振膜330与上背极板310之间电容的变化，以及半导体振膜330与下背极板320之间电容的变化，即实现了将声波转换为电信号。
对于单个差分式硅基麦克风芯片300而言，通过在半导体振膜330与上背极板310之间施加偏压后，在半导体振膜330与上背极板310之间的间隙内就会形成上电场。同样的，通过在半导体振膜330与下背极板320之间施加偏压后，在半导体振膜330与下背极板320的间隙内就会形成下电场。由于上电场和下电场的极性正好相反，当半导体振膜330受声波作用而上、下弯曲时，第一麦克风结构301的电容变化量与第二麦克风结构302的电容变化量幅度相同、符号相反。
可选地，半导体振膜330可采用多晶硅材料，半导体振膜330的厚度不大于1微米，在较小的声波作用下也会产生变形，灵敏度较高；上背极 板310和下背极板320均可采用刚性比较强、且厚度为几微米的材料制造，并在上背极板310上刻蚀有多个上气流孔311、在下背极板320上刻蚀有多个下气流孔321。因此，当半导体振膜330受声波作用产生形变时，上背极板310、下背极板320都不会受到影响而产生形变。
可选地，半导体振膜330与上背极板310或下背极板320之间的间隙分别为几微米，即微米级。
在一些可能的实施方式中，如图3所示，本申请实施例的每两个差分式硅基麦克风芯片300包括的第一差分式硅基麦克风芯片300a和第二差分式硅基麦克风芯片300b。
第一差分式硅基麦克风芯片300a的第一上背极板310a，与第二差分式硅基麦克风芯片300b的第二下背极板320b电连接，用于形成第一路信号。
第一差分式硅基麦克风芯片300a的第一下背极板320a，与第二差分式硅基麦克风芯片300b的第二上背极板310b电连接，用于形成第二路信号。
前文已经详细说明，单个差分式硅基麦克风芯片300中，第一麦克风结构301的电容变化量与第二麦克风结构302的电容变化量幅度相同、符号相反，同理，在每两个差分式硅基麦克风芯片300中，一个差分式硅基麦克风芯片300的上背极板310和另一个差分式硅基麦克风芯片300的下背极板320处的电容变化量幅度相同、符号相反。
因此，在本实施例中，由第一差分式硅基麦克风芯片300a的第一上背极板310a处生成的混合电信号，与第二差分式硅基麦克风芯片300b的第二下背极板320b处生成的混合电信号相叠加得到的第一路信号，可以削弱或抵消混合电信号中的同源噪音信号，进而提高第一路信号的质量。
同样地，由第一差分式硅基麦克风芯片300a的第一下背极板320a处生成的混合电信号，与第二差分式硅基麦克风芯片300b的第二上背极板310b处生成的混合电信号相叠加得到的第二路信号，可以削弱或抵消混合电信号中的同源噪音信号，进而提高第二路信号的质量。
具体地，可通过导线380将第一上背极板310a的上背极板电极312a，与第二下背极板320b的下背极板电极322b电连接，用于形成第一路信号；可通过导线380将第一下背极板320a的下背极板电极322a，与第二上背极板310b的上背极板电极312b电连接，用于形成第二路信号。
在一些可能的实施方式中，如图3所示，本申请实施例的第一差分式硅基麦克风芯片300a的第一半导体振膜330a，与第二差分式硅基麦克风芯片300b的第二半导体振膜330b电连接，且第一半导体振膜330a与第二半导体振膜330b中的至少一个用于与恒压源电连接。
在本实施例中，第一差分式硅基麦克风芯片300a的第一半导体振膜330a，与第二差分式硅基麦克风芯片300b的第二半导体振膜330b电连接，可以使两个差分式硅基麦克风芯片300的半导体振膜330具有相同的电位，即可以统一两个差分式硅基麦克风芯片300产生电信号的基准。
具体地，可通过导线380分别与第一半导体振膜330a的半导体振膜电极331a，以及第二半导体振膜330b的半导体振膜电极331b电连接。
可选地，可将所有差分式硅基麦克风芯片300的半导体振膜330电连接，以使各差分式硅基麦克风芯片300产生电信号的基准一致。
在一些可能的实施方式中，如图1所示，硅基麦克风装置还包括控制芯片400。
控制芯片400位于声腔210内，与电路板100电连接。
第一上背极板310a与第二下背极板320b中的一个，与控制芯片400的一个信号输入端电连接。第一下背极板320a与第二上背极板310b中的一个，与控制芯片400的另一个信号输入端电连接。
在本实施例中，控制芯片400用于接收前述各差分式硅基麦克风芯片300输出的已完成物理除噪的两路信号，可以对该两路信号进行二级除噪等处理，再向下一级设备或元器件输出。
可选地，控制芯片400通过硅胶或红胶与电路板100固定连接。
可选地，控制芯片400包括专用集成电路(ASIC，Application Specific Integrated Circuit)芯片。由于控制芯片400收到的音频信号是已完成物理 除噪的，因此此处的控制芯片400无需具备差分功能，采用普通的控制芯片400即可。针对不同的应用场景，专用集成电路芯片的输出信号可能是单端的，也可能是差分输出。
在一些可能的实施方式中，如图2所示，差分式硅基麦克风芯片300包括硅基板340。
第一麦克风结构301和第二麦克风结构302层叠设置于硅基板340的一侧。
硅基板340上具有用于形成背腔303的通孔341，通孔341与第一麦克风结构301、以及第二麦克风结构302均对应。硅基板340远离第一麦克风结构301和第二麦克风结构302的一侧，与电路板100固定连接，通孔341与进声孔连通。
在本实施例中，硅基板340为第一麦克风结构301和第二麦克风结构302提供承载，硅基板340上具有用于形成背腔303的通孔341，可利于声波进入差分式硅基麦克风芯片300，并可以分别作用于第一麦克风结构301和第二麦克风结构302，使得第一麦克风结构301和第二麦克风结构302生成差分电信号。
在一些可能的实施方式中，如图2所示，差分式硅基麦克风芯片300还包括图案化的：第一绝缘层350，第二绝缘层360和第三绝缘层370。
硅基板340、第一绝缘层350、下背极板320、第二绝缘层360、半导体振膜330、第三绝缘层370以及上背极板310，依次层叠设置。
在本实施例中，下背极板320与硅基板340之间通过图案化的第一绝缘层350隔开，半导体振膜330与上背极板310之间通过图案化的第二绝缘层360隔开，上背极板310与半导体振膜330之间通过图案化的第三绝缘层370隔开，形成各导电层之间的电隔离，可以避免各导电层发生短路、降低信号精度。
可选地，第一绝缘层350、第二绝缘层360以及第三绝缘层370均可在全面成膜后通过刻蚀工艺实现图案化，去除对应通孔341区域的绝缘层部分以及用于制备电极的区域的绝缘层部分。
需要说明的是，本申请上述各实施例中的硅基麦克风装置采用单振膜(如：半导体振膜330)、双背极(如：上背极板310和下背极板320)所实现的差分式硅基麦克风芯片300来示例。其中，差分式硅基麦克风芯片300除了单振膜、双背极的设置方式之外，也可以是双振膜、单背极的方式，或者是其他的差分式结构。
本申请的发明人考虑到，硅基麦克风装置内的多差分式麦克风芯片需要协作实现降噪。为此，本申请为各差分式硅基麦克风芯片的电连接方式提供如下另一种可能的实现方式：
本申请实施例的硅基麦克风装置还包括差分式控制芯片。
如图4所示，至少两个差分式硅基麦克风芯片300中，所有的差分式硅基麦克风芯片300的第一麦克风结构301依次电连接后，与差分式控制芯片的一路输入端电连接。所有的差分式硅基麦克风芯片300的第二麦克风结构302依次电连接后，与差分式控制芯片的另一路输入端电连接。
在本实施例中，各差分式硅基麦克风芯片300的第一麦克风结构301依次电连接、同时各差分式硅基麦克风芯片300的第二麦克风结构302依次电连接，拾音时可以形成两路变化量幅度相同、符号相反的音频信号，每路音频信号是各混合电信号(包括声音电信号和噪音电信号)的叠加信号。两路变化量幅度相同、符号相反的音频信号送入差分式控制芯片内进行差分处理，例如利用叠加后声音电信号的增量大于噪音电信号的增量实现除噪，从而可减小共模噪声，提高信噪比和声压过载点，进而提高音质。
本实施例中各差分式硅基麦克风芯片300的具体结构可以与前述各实施例提供的各差分式硅基麦克风芯片300的结构相同，在此不再赘述。
基于同一发明构思，本申请实施例提供了一种电子设备，该电子设备包括：如前述实施例提供的任一种硅基麦克风装置。
在本实施例中，电子设备可以是手机、TWS(True Wireless Stereo，真正无线立体声)耳机、扫地机器人、智能空调、智能油烟机等振动较大的智能家居产品。由于各电子设备采用了前述各实施例提供的硅基麦克风装置，其原理和技术效果请参阅前述各实施例，在此不再赘述。
应用本申请实施例，至少能够实现如下有益效果：
1、硅基麦克风装置采用至少两个差分式硅基麦克风芯片300的拾音结构，各差分式硅基麦克风芯片300的背腔303与进声孔一一对应地连通，可以使得同源声波均作用到各差分式硅基麦克风芯片300，或使得不同源声波作用到对应的差分式硅基麦克风芯片300，即实现对同源声波的多重采集或不同源声波的分别采集，再配合后续手段将各混合电信号进一步处理，即可实现降噪、提高输出的音频信号的质量。
2、硅基麦克风装置的由屏蔽罩200罩合于电路板100的一侧而形成声腔210中，隔离件500将声腔210隔离出与至少部分相邻的差分式硅基麦克风芯片300的背腔303对应的子声腔210，这样能够有效降低进入各差分式硅基麦克风芯片300的背腔303的声波在硅基麦克风装置的声腔210内继续传播的概率或强度，降低声波对其他差分式硅基麦克风芯片300造成的干扰，有效提高各差分式麦克风芯片300的拾音精度，进而提高硅基麦克风装置输出的音频信号的质量。
在本申请的描述中，需要理解的是，术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
在本说明书的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述仅是本申请的部分实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (10)

  1. 一种硅基麦克风装置，包括：
    电路板，开设有至少两个进声孔；
    屏蔽罩，罩合于所述电路板的一侧形成声腔；
    至少两个差分式硅基麦克风芯片，均设置于所述电路板的一侧，且位于所述声腔内；各所述差分式硅基麦克风芯片的背腔与所述进声孔一一对应地连通；
    隔离件，位于所述声腔内，将所述声腔隔离出与至少部分相邻的所述差分式硅基麦克风芯片的背腔对应的子声腔。
  2. 根据权利要求1所述的硅基麦克风装置，其中，所述隔离件的一端向所述屏蔽罩延伸，所述隔离件的另一端至少延伸至所述差分式硅基麦克风芯片远离所述电路板的一侧。
  3. 根据权利要求2所述的硅基麦克风装置，其中，所述隔离件的一端与所述屏蔽罩连接。
  4. 根据权利要求2所述的硅基麦克风装置，其中，所述隔离件的另一端与所述电路板的一侧连接。
  5. 根据权利要求1-4中任一项所述的硅基麦克风装置，其中，所述至少两个差分式硅基麦克风芯片为偶数个，每两个所述差分式硅基麦克风芯片中，一个所述差分式硅基麦克风芯片的第一麦克风结构，与另一个所述差分式硅基麦克风芯片的第二麦克风结构电连接，一个所述差分式硅基麦克风芯片的第二麦克风结构，与另一个所述差分式硅基麦克风芯片的第一麦克风结构电连接。
  6. 根据权利要求5所述的硅基麦克风装置，其中，所述差分式硅基麦克风芯片包括层叠并间隔设置的上背极板、半导体振膜和下背极板；
    所述上背极板和所述半导体振膜构成所述第一麦克风结构的主体；所述半导体振膜和所述下背极板构成所述第二麦克风结构的主体；
    所述上背极板和所述下背极板分别与所述进声孔对应的部分均设有若干气流孔。
  7. 根据权利要求6所述的硅基麦克风装置，其中，每两个所述差分式硅基麦克风芯片包括第一差分式硅基麦克风芯片和第二差分式硅基麦克风芯片；
    所述第一差分式硅基麦克风芯片的第一上背极板，与所述第二差分式硅基麦克风芯片的第二下背极板电连接，用于形成第一路信号；
    所述第一差分式硅基麦克风芯片的第一下背极板，与所述第二差分式硅基麦克风芯片的第二上背极板电连接，用于形成第二路信号。
  8. 根据权利要求7所述的硅基麦克风装置，其中，所述第一差分式硅基麦克风芯片的第一半导体振膜，与所述第二差分式硅基麦克风芯片的第二半导体振膜电连接，且所述第一半导体振膜与所述第二半导体振膜中的至少一者用于与恒压源电连接。
  9. 根据权利要求1-4中任一项所述的硅基麦克风装置，其中，所述硅基麦克风装置还包括差分式控制芯片；
    所述至少两个差分式硅基麦克风芯片中，所有的所述差分式硅基麦克风芯片的第一麦克风结构依次电连接后，与所述差分式控制芯片的一路输入端电连接；所有的所述差分式硅基麦克风芯片的第二麦克风结构依次电连接后，与所述差分式控制芯片的另一路输入端电连接。
  10. 一种电子设备，包括：如权利要求1-9中任一项所述的硅基麦克 风装置。
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