WO2022055042A1 - Élément céramique d'un équipement d'exposition de semi-conducteurs et son procédé de fabrication - Google Patents

Élément céramique d'un équipement d'exposition de semi-conducteurs et son procédé de fabrication Download PDF

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WO2022055042A1
WO2022055042A1 PCT/KR2020/018349 KR2020018349W WO2022055042A1 WO 2022055042 A1 WO2022055042 A1 WO 2022055042A1 KR 2020018349 W KR2020018349 W KR 2020018349W WO 2022055042 A1 WO2022055042 A1 WO 2022055042A1
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exposure equipment
ceramic member
weight
semiconductor exposure
parts
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PCT/KR2020/018349
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English (en)
Korean (ko)
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윤태규
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(주)대경셈코
윤태규
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Publication of WO2022055042A1 publication Critical patent/WO2022055042A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C04B2235/3267—MnO2
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
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    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron

Definitions

  • the present invention relates to a ceramic member for semiconductor exposure equipment and a method for manufacturing the same, and more particularly, in an exposure process, which is an operation of drawing a circuit pattern on the surface of a wafer on which a photoresist film is formed by passing light through a mask on which a circuit pattern is formed, the wafer, etc.
  • a ceramic member for semiconductor exposure equipment that can be applied to a member such as a vacuum chuck or an electrostatic chuck on which a substrate is placed, and a method for manufacturing the same.
  • Stepper exposure is a process in which a circuit is drawn on a wafer by passing light through a mask, and is commonly used to print highly integrated circuits in a semiconductor process.
  • exposure is often used synonymously with exposure that controls light with a camera shutter, but exposure in semiconductor processing is a term that refers to the process of selectively irradiating light. It refers to the operation of drawing a circuit pattern on the wafer surface on which the photoresist film is formed by passing light through it.
  • the light passing through the circuit pattern transfers the circuit pattern to the wafer as it is, and this process proceeds through a stepper called exposure equipment. This is to make a microscopic electronic circuit picture on the wafer coated with the photoresist by putting light through it.
  • a chuck such as a vacuum chuck or an electrostatic chuck is used as a means for holding or fixing and supporting a carrier substrate such as a wafer during a specific process and placing the substrate.
  • a chuck used in semiconductor, display, and other substrate processes serves to place a substrate and fix the substrate by vacuum or electrostatic functions. It is preferable to use a ceramic material with excellent wear resistance in order to prevent contamination of the carrier and damage to parts through repeated processes and to have a high lifespan.
  • alumina ceramics are mainly used as materials optimized for workability and wear resistance, but the color of the material itself is mainly white or ivory, around the light source or focus When used as a peripheral part for exposure equipment, it has properties that are not suitable as a member for exposure equipment because it can reflect light and cause flare noise.
  • the current chuck for exposure equipment uses a material obtained by anodizing aluminum metal, but there is a limit in realizing a fine line width due to its vulnerability to thermal deformation and rapid wear to the extent that it cannot be compared with ceramic.
  • Alumina (Al 2 O 3 ) ceramic refers to an inorganic material manufactured by using the refined alumina powder as a raw material. , It is a fine powder with an average particle size of 1 ⁇ m or less, and has a characteristic of relatively good sintering.
  • Alumina ceramics made of such high-purity powder have excellent chemical resistance, and since they are inert, they have high resistance to chemical erosion, and are hardly affected by acids, alkalis, organic solvents, and the like.
  • alumina ceramic is a dense and high hardness material, and has 15 to 20 times higher wear resistance than general metal materials. holds the
  • alumina ceramics have excellent heat resistance, and the maximum operating temperature exceeds the melting point of most other metals, and it can be used even at a temperature of 1,600 to 1,700° C. even in continuous use.
  • alumina ceramics have a very wide range of application to not only various electronic parts, semiconductor processes, spacecraft, and automobile engines, but also to the human bioindustry following human skeleton transplantation.
  • alumina ceramics have advantageous physical properties such as chemical resistance, chemical stability, heat resistance, and insulation in the semiconductor manufacturing process as described above, in order to be used as a material for semiconductor exposure equipment, the above advantageous properties and Together with a chuck shape of a specific structure such as a vacuum chuck or an electrostatic chuck, it has excellent formability and, crucially, to prevent problems due to light reflection in the exposure process, the reflectance is reduced in the ultraviolet-visible ray region used during the exposure process. It is desirable to be able to minimize (or maximize absorption rate).
  • Japanese Patent Publication No. 6141756 and Korean Patent Publication No. 1168863, etc. disclose technical details on ceramic vacuum chucks with low reflectance or containing colorants. It has not been described, and so far, the optimized research results for this have not been presented.
  • the present invention provides a semiconductor having a low reflectance in order to increase the precision of pattern transfer in an exposure process, and having excellent other basic physical properties and chuck shape processability.
  • An object of the present invention is to provide a ceramic member for exposure equipment and a method for manufacturing the same.
  • the ceramic member for semiconductor exposure equipment Al 2 O 3 55.9 ⁇ 76.8% by weight, TiO 2 4.0 ⁇ 7.0% by weight, Fe 2 O 3 6.0 ⁇ 10.0% by weight in the powdery raw material stage , Co 2 O 3 8.0 ⁇ 15.0% by weight, MnO 2 3.0 ⁇ 8.0% by weight, ZnO 0.5 ⁇ 0.8% by weight, SiO 2 1.0 ⁇ 2.0% by weight, ZrO 2 0.5 ⁇ 0.8% by weight, CaO 0.2 ⁇ 0.5% by weight
  • the reflectance of the sintered compact produced as a result of sintering is 6.5% or less in the wavelength range of 360 to 480 nm.
  • the Al 2 O 3 may be in the form of a submicron-sized powder.
  • the theoretical density of the sintered body manufactured as a result of sintering may be 98% or more compared to the fine alumina ceramics.
  • the ceramic member for semiconductor exposure equipment is a ceramic member for semiconductor exposure equipment manufactured as a main component of Al 2 O 3 , and includes powdery Co 2 O 3 as a colorant input in the raw material stage, and at the same time, It further comprises at least one additional colorant selected from powdery TiO 2 , Fe 2 O 3 , MnO 2 , and ZnO, wherein the amount of the additional colorant is 168 to 323 parts by weight based on 100 parts by weight of Co 2 O 3 .
  • TiO 2 , Fe 2 O 3 , MnO 2 and ZnO are simultaneously included, and 50 to 88 parts by weight of TiO 2 , 75 to 125 parts by weight of Fe 2 O 3 relative to 100 parts by weight of Co 2 O 3 , MnO 2 37-100 parts by weight, ZnO 6-10 parts by weight.
  • the colorant and the additional colorant may be 22 to 41 wt% based on the total weight of the total starting material.
  • powdery TiC may be further included as the additional colorant.
  • the method for manufacturing a ceramic member for semiconductor exposure equipment includes powdery Al 2 O 3 and Co 2 O 3 , and powdery TiO 2 , Fe 2 O 3 , MnO 2 and TiC from the group consisting of A mixed slurry preparation step of preparing a slurry by mixing any one or more selected colorant components with a solvent; a molding drying step of molding and drying the slurry prepared in the mixed slurry preparation into a predetermined shape; After the molding and drying step, a sintering step of sintering the dried object at a temperature of at least 1,000 °C or more; includes.
  • powdery SiO 2 may be further included.
  • powdery ZrO 2 and the CaO may be further included.
  • the sintering step may be performed for 1 to 3 hours at a temperature of 1,200 to 1,400° C. in an atmospheric pressure or reduced pressure atmosphere.
  • the ceramic member for semiconductor exposure equipment according to the present invention has the following effects.
  • the present invention derives the optimal mixing conditions suitable for the ceramic member material for semiconductor exposure equipment through numerous experiments, and by verifying the characteristics of the alumina ceramic sintered body as a ceramic member for semiconductor exposure equipment manufactured under these optimal mixing conditions, blackening ( It is effective in minimizing the reflectance of light) and aims to develop a ceramic member material for semiconductor exposure equipment with excellent physical properties of the alumina final sintered body.
  • MnO 2 or TiO 2 is added to Al 2 O 3 at a certain level or more, grain boundary migration occurs actively to induce excessive grain growth. Therefore, in the present invention, an optimum amount of MnO 2 or TiO 2 is added to Al 2 O 3 which is a raw material, and the optimum component and mixing ratio are determined in order to produce a ceramic member for semiconductor exposure equipment with the best physical properties and blackening and dense structure. wanted to derive.
  • the ceramic member for semiconductor exposure equipment of the present invention as a colorant, one or more components selected from among TiO 2 , Fe 2 O 3 , MnO 2 and Co 2 O 3 and SiO 2 are added to Al 2 O 3 raw material as a starting material. It is characterized in that it is prepared by mixing in the phase to obtain a slurry, drying and sintering the slurry.
  • an alumina ceramic raw material Al 2 O 3 powder having a size of sub-micron may be used as a starting material.
  • TiO 2 , Fe 2 O 3 , MnO 2 , etc. may be used as a colorant added to increase light absorption.
  • MnO 2 , TiO 2 and Fe 2 O 3 in order to obtain a ceramic member for semiconductor exposure equipment having the most effective blackening and reflectance of less than 10%, it is more preferable to use MnO 2 , TiO 2 and Fe 2 O 3 together.
  • the present invention uses Co 2 O 3 as the most important component as the above-mentioned colorant. When using Co 2 O 3 , the color of alumina will be described later.
  • cobalt oxide causes a reduction action at the same time as oxidation itself in the sintering process, thereby contributing to the black color of alumina (Al 2 O 3 ), the starting material, and the reduction strength of titanium used as a colorant in the past While stronger than carbide (TiC) and zinc oxide (ZnO), the synergistic effect from the coexistence of these materials further intensifies the degree of blackening.
  • cobalt oxide is used as a main colorant, and in addition, it is preferable to use a combination of at least two or more materials as an auxiliary colorant.
  • SiO 2 may be further added if necessary to suppress grain growth, reduce pores, and prevent uniformity of the finally obtained ceramic member sintered body for exposure equipment.
  • the SiO 2 improves sinterability when manufacturing a ceramic member for semiconductor exposure equipment, so that pores are suppressed through densification by liquid phase sintering and a denser ceramic member sintered body for semiconductor exposure equipment can be obtained.
  • the sintering aid is preferably included in an amount of 1 to 2% by weight of the alumina mixture to which a wetting agent such as distilled water or an organic solvent is not added.
  • the mixed slurry containing the above components is molded into an appropriate shape, then subjected to a drying step, and, if necessary, a post-molding process and sintered to obtain a sintered body. That is, of course, it is also possible to carry out the process of forming the dried product into a desired shape if necessary before sintering.
  • the sintering may be performed in an air atmosphere or a vacuum atmosphere, that is, at a temperature of 1,200 to 1,400° C. for 1 to 3 hours at atmospheric pressure or an atmosphere lowered than atmospheric pressure. If it is lower than the above temperature range, sintering occurs insufficiently, and in a temperature range above that, the sintering density may be reduced due to excessive liquid phase.
  • Al 2 O 3 grain growth is affected depending on the components included in the mixed slurry.
  • Al 2 O 3 grain growth is suppressed and pores are reduced. microstructure is visible.
  • SiO 2 is added to the slurry, sintering at a temperature of 1,200° C. is more advantageous because it is possible to manufacture a compact ceramic member sintered body for a dense semiconductor exposure equipment having a high density by liquid-phase sintering.
  • a ceramic material applicable to a ceramic member for a semiconductor exposure equipment according to the present invention was prepared as a starting material, each of six samples having the following composition ratios.
  • Samples 1 to 3 include the characteristic components according to the present invention, but are prepared with slightly different component ratios, and Samples 4 to 6 include only conventional colorants and other additives as a control, but with slightly different component ratios is manufactured by
  • Components and component ratios (wt%) for each sample are as follows.
  • Each slurry was molded into a rectangular parallelepiped with a size of 50 mm ⁇ 50 mm ⁇ 10 mm for easy comparison, and was covered with thin paper to prevent rapid drying at room temperature of 50% to 60% humidity and 20°C to 30°C for 2 weeks. It was left to dry.
  • Each dried sample was sintered in an atmospheric pressure electric furnace set at 1,300° C. for 5 days, and a sample having a shape and color as shown in FIG. 1 was obtained.
  • Samples 1 to 3 for application to a member for semiconductor exposure equipment according to the present invention had a black level that could be discerned even with the naked eye, whereas Sample 4 had a pale blue color, and Sample 5 showed a dark auburn color, and sample 6 had a pale auburn color.
  • the samples can be smoothly formed through conventional ceramic processing equipment in the process of processing the samples into an appropriate shape.
  • the wavelength used in exposure equipment for semiconductors reaches the visible light region in the shortest vicinity of 200 nm, and therefore the reflectance at each wavelength was measured in the range of 360 nm to 680 nm.
  • the results of this experiment are the results of measuring reflectance with an integrating sphere accessory using JASCO's V-770 UV-Visible/NIR and Konica Minolta's CM-3799D Spectrophotometer.
  • samples 1 to 3 which are samples according to the present invention, generally show excellent reflectance values, and in particular, ultraviolet light. It was confirmed that the reflectance was low even in the region. On the other hand, in the case of Samples 4 to 6, as it was confirmed that sufficient colors were not realized even with the naked eye, the reflectance measured through the experiment was also too high to be used for semiconductor exposure equipment. It could be confirmed that the
  • the ceramic member for semiconductor exposure equipment manufactured according to the present invention as described above may have a reflectivity of less than 10% and a theoretical density of 98% or more compared to fine alumina ceramics, while effectively maintaining a black color effective for light absorption. .
  • the ceramic member for semiconductor exposure equipment according to the present invention has a dense structure with few pores and has appropriate processability, and has excellent physical properties such as sintering density, reflectance, color, insulation resistance (room temperature), bending strength, coefficient of thermal expansion, etc. Do.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Un élément céramique d'un équipement d'exposition de semi-conducteurs selon la présente invention est fabriqué en utilisant de l'Al 2O 3 comme constituant principal, comprend du Co 2O3 en poudre en tant qu'entrée d'agent colorant dans une étape de matière première, et comprend en outre au moins un agent colorant supplémentaire choisi parmi le TiO2, Fe 2O 3, MnO 2, et ZnO en poudre, l'agent colorant supplémentaire étant de 168 à 323 parties en poids par rapport à 100 parties en poids de Co 2O 3. Par conséquent, il peut être prévu que lorsqu'il est fabriqué en tant que mandrin pour maintenir et fixer un substrat dans un traitement de semi-conducteurs, l'élément céramique de l'équipement d'exposition de semi-conducteurs peut être fabriqué en céramique d'alumine ayant d'excellentes propriétés physiques, telle qu'une résistance à l'abrasion et une résistance chimique, et peut augmenter la précision du transfert de motif en empêchant le bruit de torche provoqué par la réflexion de la lumière pendant un processus d'exposition.
PCT/KR2020/018349 2020-09-14 2020-12-15 Élément céramique d'un équipement d'exposition de semi-conducteurs et son procédé de fabrication WO2022055042A1 (fr)

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KR1020200117907A KR102279391B1 (ko) 2020-09-14 2020-09-14 반도체 노광 장비용 세라믹 부재 및 동 부재의 제조방법
KR10-2020-0117907 2020-09-14

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JP2011168420A (ja) * 2010-02-17 2011-09-01 Kikusui Chemical Industries Co Ltd アルミナ焼結体、及び該アルミナ焼結体によって形成された基板保持盤
KR20110130619A (ko) * 2010-05-28 2011-12-06 조항선 착색 세라믹 조성물 및 그의 제조방법
KR20150114616A (ko) * 2014-04-01 2015-10-13 목포대학교산학협력단 블랙 알루미나의 제조방법
JP2020506863A (ja) * 2017-01-31 2020-03-05 サン−ゴバン サントル ド レシェルシュ エ デテュド ユーロペアン 高密度焼結生成物

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JP3393388B2 (ja) 1992-11-12 2003-04-07 日本製粉株式会社 パン用小麦粉組成物及びこれを用いたパンの製造方法
JP4761334B2 (ja) 2009-02-23 2011-08-31 株式会社ソディック 着色セラミック真空チャックおよびその製造方法
DE102016120863A1 (de) * 2015-11-09 2017-05-11 Center For Abrasives And Refractories Research & Development C.A.R.R.D. Gmbh Gesintertes, polykristallines, flach ausgebildetes, geometrisch strukturiertes keramisches Schleifelement, Verfahren zu seiner Herstellung und seine Verwendung

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JPH05254922A (ja) * 1992-03-05 1993-10-05 Nippon Seratetsuku:Kk 着色アルミナ系セラミックス及びその製造方法
JP2011168420A (ja) * 2010-02-17 2011-09-01 Kikusui Chemical Industries Co Ltd アルミナ焼結体、及び該アルミナ焼結体によって形成された基板保持盤
KR20110130619A (ko) * 2010-05-28 2011-12-06 조항선 착색 세라믹 조성물 및 그의 제조방법
KR20150114616A (ko) * 2014-04-01 2015-10-13 목포대학교산학협력단 블랙 알루미나의 제조방법
JP2020506863A (ja) * 2017-01-31 2020-03-05 サン−ゴバン サントル ド レシェルシュ エ デテュド ユーロペアン 高密度焼結生成物

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