WO2022050273A1 - 組成物、基板の処理方法 - Google Patents

組成物、基板の処理方法 Download PDF

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Publication number
WO2022050273A1
WO2022050273A1 PCT/JP2021/031941 JP2021031941W WO2022050273A1 WO 2022050273 A1 WO2022050273 A1 WO 2022050273A1 JP 2021031941 W JP2021031941 W JP 2021031941W WO 2022050273 A1 WO2022050273 A1 WO 2022050273A1
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Prior art keywords
composition
substrate
salt
acid
group
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English (en)
French (fr)
Japanese (ja)
Inventor
萌 成田
宣明 杉村
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Fujifilm Corp
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Fujifilm Corp
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Priority to KR1020237006900A priority Critical patent/KR102958765B1/ko
Priority to JP2022546925A priority patent/JP7553577B2/ja
Publication of WO2022050273A1 publication Critical patent/WO2022050273A1/ja
Priority to US18/174,208 priority patent/US20230223272A1/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside

Definitions

  • the present invention relates to a composition and a method for treating a substrate.
  • Patent Document 1 discloses a treatment liquid containing hypochlorous acids and a predetermined amount of a quaternary ammonium salt.
  • the present inventor examined a transition metal-containing substance (particularly, Ru-containing substance) using the composition disclosed in Patent Document 1, and found that the dissolving ability for the transition metal-containing substance (particularly Ru-containing substance) is not sufficient. It was found that there is room for further improvement.
  • At least one oxohaloic acid compound selected from the group consisting of hypochlorous acid, chloric acid, chloric acid, bromic acid, and salts thereof, and a compound represented by the formula (1) described later.
  • the composition comprises the above, and the content of the compound represented by the formula (1) is 1.0 to 25.0% by mass with respect to the total mass of the composition.
  • the composition according to [1] further comprising chloride ions.
  • the composition according to [2], wherein the content of chloride ions is 0.001 to 1.00% by mass with respect to the total mass of the composition.
  • R 1 to R 4 is an alkyl group having 1 carbon number which may have a substituent, and at least one of R 1 to R 4 has a substituent.
  • the compound represented by the formula (1) is ethyltrimethylammonium salt, diethyldimethylammonium salt, methyltriethylammonium salt, trimethyl (hydroxyethyl) ammonium salt, dimethylbis (2-hydroxyethyl) ammonium salt, methyltris ( It is selected from the group consisting of 2-hydroxyethyl) ammonium salt, methyltributylammonium salt, methyltributylammonium salt, dimethyldipropylammonium salt, benzyltrimethylammonium salt, benzyltriethylammonium salt, and triethyl (hydroxyethyl) ammonium salt.
  • Step A is the step A1 in which the composition is placed on the substrate and the ruthenium-containing wiring is recess-etched, and the outer edge of the substrate on which the ruthenium-containing film is placed using the composition.
  • Step A2 to remove the film of the part
  • step A3 to remove the metal-containing material adhering to the back surface of the substrate on which the film composed of ruthenium-containing material is arranged using the composition, on the substrate after dry etching using the composition.
  • the method for treating a substrate according to [15] which is a step A4 for removing the ruthenium-containing substance of the above, or a step A5 for removing the ruthenium-containing substance on the substrate after a chemical mechanical etching treatment using a composition.
  • the present invention it is possible to provide a composition having excellent dissolving ability for a transition metal-containing substance (particularly, Ru-containing substance). Further, according to the present invention, it is possible to provide a method for treating a substrate using a composition.
  • the numerical range represented by using “-” means a range including the numerical values before and after "-” as the lower limit value and the upper limit value.
  • the “content” of the component means the total content of the two or more kinds of components.
  • exposure means exposure to ultraviolet rays typified by a mercury lamp, excimer laser, X-rays, exposure to EUV (Extreme ultraviolet) light, and electron beams and ion beams, unless otherwise specified. Includes drawing with particle beams such as.
  • the described compounds may contain structural isomers (compounds having the same number of atoms but different structures), optical isomers, and isotopes, unless otherwise specified. Further, the isomers and isotopes may contain one or more kinds.
  • the dry etching residue is a by-product produced by performing dry etching (for example, plasma etching), and is, for example, an organic residue derived from a photoresist, a Si-containing residue, and a residue. Refers to a metal-containing residue (for example, a transition metal-containing residue).
  • composition of the present invention is at least one oxohaloic acid compound selected from the group consisting of hypochlorous acid, chloric acid, chloric acid, bromic acid, and salts thereof (hereinafter, simply "oxohaloic acid compound”). ”) And the compound represented by the formula (1) (hereinafter, also referred to as“ specific compound ”), and the content of the compound represented by the formula (1) is the total mass of the composition. On the other hand, it is 1.0 to 25.0% by mass.
  • the mechanism by which the problem of the present invention is solved by using the composition of the present invention is not always clear, but the present inventor speculates as follows. It is speculated that the composition contains an oxohaloic acid compound and a predetermined amount of a specific compound, and the synergistic effect of these compounds can realize excellent dissolving ability for transition metal-containing substances (particularly Ru-containing substances). Will be done. Hereinafter, a more excellent dissolving ability of the composition in a transition metal-containing substance (particularly, a Ru-containing substance) is also referred to as a more excellent effect of the present invention.
  • the composition comprises an oxohalogen acid compound.
  • the oxohaloic acid compound means at least one compound selected from the group consisting of hypochlorous acid, chloric acid, chloric acid, bromic acid, and salts thereof.
  • the salt of hypochlorite, chloric acid, chloric acid and bromine include salts of alkali metal elements (sodium and potassium, etc.), salts of alkaline earth metal elements (magnesium, calcium, etc.), and the like. Examples thereof include salts of other metal elements and quaternary ammonium salts, and salts of alkali metal elements are preferable, and sodium salts are more preferable.
  • hypochlorous acid As the oxohalogen acid compound, at least one selected from the group consisting of hypochlorous acid, chlorous acid, and salts thereof is preferable, and hypochlorous acid and them are preferable, because the effect of the present invention is excellent. At least one selected from the group consisting of salts of is more preferred.
  • One type of oxohalogen acid compound may be used alone, or two or more types may be used in combination.
  • the content of the oxohaloic acid compound is often 0.001 to 50.0% by mass, and 0.01 to 30.0% by mass, based on the total mass of the composition, in that the effect of the present invention is more excellent.
  • % Is preferable 0.05 to 30.0% by mass is more preferable, 0.05 to 28.0% by mass is further preferable, 0.5 to 28.0% by mass is particularly preferable, and 1.0 to 10.0 is particularly preferable. Is the most preferable.
  • the composition contains a compound represented by the formula (1) (specific compound).
  • the content of the specific compound is 1.0 to 25.0% by mass, preferably 3.0 to 25.0% by mass, preferably 1.0 to 10.0% by mass, based on the total mass of the composition. More preferably, 3.0 to 10.0% by mass is further preferable.
  • R 1 to R 4 each independently represent an alkyl group which may have a substituent.
  • the alkyl group may be linear, branched or cyclic, and is preferably linear.
  • As the number of carbon atoms of the alkyl group 1 to 20 is preferable, 1 to 15 is more preferable, 1 to 10 is more preferable, 1 to 5 is particularly preferable, and 1 to 2 is particularly preferable, because the effect of the present invention is more excellent. Most preferred.
  • As the total number of carbon atoms of R 1 to R 4 , 4 to 20 is preferable, 4 to 15 is more preferable, and 4 to 7 is further preferable, because the effect of the present invention is more excellent.
  • the total carbon number of R 1 to R 4 means the total value of the carbon numbers of R 1 , R 2 , R 3 , and R 4 .
  • Examples of the substituent contained in the alkyl group include a hydroxy group, a carboxy group, an amino group, an oxo group, a phosphonic acid group, a sulfo group, an aryl group, a heteroaryl group, and a mercapto group. Of these, as the substituent, a hydroxy group or an aryl group is preferable.
  • the number of substituents of the alkyl group is preferably 0 to 5, more preferably 0 to 3, and even more preferably 0 to 1.
  • n represents an integer of 1 to 3. As n, an integer of 1 to 2 is preferable, and 1 is more preferable.
  • R 1 to R 4 do not represent the same group.
  • R 1 to R 4 represent a methyl group, since these groups are the same group, the above requirement that "all of R 1 to R 4 do not represent the same group". Does not meet.
  • R 1 to R 3 are all methyl groups and R 4 is an ethyl group, all of R 1 to R 4 are not the same group, so that all of the above "R 1 to R 4 " are present. , Do not represent the same group. " If at least one of the type of the substituent and the type of the alkyl group is different, they do not correspond to the same group.
  • R 1 to R 4 can take, for example, among the four groups represented by R 1 to R 4 , the three groups represented by R 1 to R 3 are the same group, and R 4 An embodiment in which one group represented by the above three groups is different from the above three groups can be mentioned. Further, of the four groups represented by R 1 to R 4 , the two groups represented by R 1 to R 2 are the same group, and the two groups represented by R 3 to R 4 are the same group. Is the same group, but the group represented by R 1 to R 2 and the group represented by R 3 to R 4 are different groups. Further, all four groups represented by R 1 to R 4 may be different groups.
  • R 1 to R 4 are alkyl groups selected from the group consisting of an alkyl group having 1 carbon atom which may have a substituent and an alkyl group having 2 carbon atoms which may have a substituent. Yes, at least one of R 1 to R 4 is an alkyl group having 1 carbon number which may have a substituent, and at least one of R 1 to R 4 is a carbon which may have a substituent. It is preferably an alkyl group of number 2.
  • R 1 to R 4 examples include alkyl groups such as methyl group, ethyl group, propyl group, butyl group, dodecyl group and tetradodecyl group; hydroxymethyl group, hydroxyethyl group, hydroxybutyl group and the like.
  • Hydroxyalkyl groups alkyl groups having a hydroxy group
  • examples thereof include benzyl groups and arylalkyl groups such as phenethyl groups (alkyl groups having an aryl group).
  • an alkyl group, a hydroxyalkyl group, or an arylalkyl group is preferable, and an alkyl group or a hydroxyalkyl group is more preferable as R1 to R4 in that the effect of the present invention is more excellent.
  • X n- represents an n-valent anion.
  • n has the same meaning as n described above, and the preferred embodiment is also the same.
  • the n-valent anion is not particularly limited, and is, for example, hydroxide ion, halide ion, cyanide ion, acetate ion, trifluoroacetate ion, hydrogen sulfate ion, sulfate ion, sulfite ion, sulfonate ion, thio. Examples thereof include sulfate ion, carbonate ion, oxalate ion, hydrogen phosphate ion, and phosphate ion.
  • hydroxide ion or halide ion is preferable as Xn- in that the effect of the present invention is more excellent, and hydroxide ion, chloride ion, fluoride ion or bromide ion is preferable. More preferably, hydroxide ion or chloride ion is further preferable.
  • Specific compounds include, for example, ethyltrimethylammonium salt, diethyldimethylammonium salt, methyltriethylammonium salt, trimethyl (hydroxyethyl) ammonium salt, methyltributylammonium salt, dimethyldipropylammonium salt, benzyltrimethylammonium salt, and benzyltriethylammonium salt.
  • Triethyl (hydroxyethyl) ammonium salt Triethyl (hydroxyethyl) ammonium salt, dodecyltrimethylammonium salt, tetradecyltrimethylammonium salt, hexadecyltrimethylammonium salt, methyltri (hydroxyethyl) ammonium salt, benzyltrimethylammonium salt, triethyl (hydroxyethyl) ammonium salt, bishydroxyethyl Dimethylammonium salt, trimethylpropylammonium salt, isopropyltrimethylammonium salt, butyltrimethylammonium salt, triethylpropylammonium salt, isopropyltriethylammonium salt, butyltriethylammonium salt, methyltripropylammonium salt, ethyltripropylammonium salt, butyltripropylammonium Salt, ethyltributylammonium salt,
  • the specific compounds are ethyltrimethylammonium salt, diethyldimethylammonium salt, methyltriethylammonium salt, trimethyl (hydroxyethyl) ammonium salt, dimethylbis (2-hydroxyethyl) ammonium salt, and methyltris (2-hydroxyethyl) ammonium salt.
  • the salt include the above-mentioned salt with Xn ⁇ .
  • one kind may be used alone, or two or more kinds may be used in combination.
  • the composition may contain an arbitrary component in addition to the components contained in the above composition.
  • Optional components include, for example, chloride ions, solvents, pH regulators, and surfactants.
  • the optional components will be described.
  • the composition may contain chloride ions.
  • the chloride ion content is preferably 0.0001 to 20.00% by mass, preferably 0.0001 to 10.00% by mass, based on the total mass of the composition, in that the ability to remove metal residues is improved. More preferably, 0.001 to 5.00% by mass is further preferable, and 0.001 to 1.00% by mass is particularly preferable.
  • the mass ratio of the content of the specific compound to the content of the chloride ion is preferably 10,000 or less, more preferably 1000 or less, in terms of excellent metal residue removing ability. It is preferably 500 or less, more preferably 100 or less, and particularly preferably 100 or less.
  • the lower limit is not particularly limited, and is preferably 0.1 or more, more preferably 1 or more, and even more preferably 10 or more.
  • the chloride ion content of the composition is determined by an ion chromatograph method. Specifically, Thermo Fisher's Dionex ICS-2100 can be mentioned. When the chloride ion content is low, the chloride ion content may be measured after concentration using a concentration column. If the composition of the raw material is known, the chloride ion content may be calculated from the amount of the raw material added.
  • a compound containing chloride ions may be added to the composition immediately before the preparation of the composition or the treatment of the substrate. Further, a raw material containing a trace amount of impurities may be used in the preparation of the composition, and chloride ions may be contained in the composition.
  • the compound containing chloride ions include compounds that dissociate in the composition to produce chloride ions and cations. Examples of the compound that produces the chloride ion and the cation include a specific compound and hydrochloric acid or a salt thereof (for example, a salt with an alkali metal and a salt with an alkaline earth metal).
  • the composition may contain a solvent.
  • the solvent include water and an organic solvent, and water is preferable.
  • the water contained in the composition may contain an unavoidable trace mixture component.
  • the water content is preferably 50% by mass or more, more preferably 65% by mass or more, still more preferably 70% by mass or more, based on the total mass of the composition.
  • the upper limit is not particularly limited, and is preferably 99.99% by mass or less, more preferably 99.9% by mass or less, based on the total mass of the composition.
  • a water-soluble organic solvent is preferable.
  • the water-soluble organic solvent include ether-based solvents, alcohol-based solvents, ketone-based solvents, amide-based solvents, sulfur-containing solvents, and lactone-based solvents.
  • the water-soluble organic solvent an organic solvent that can be mixed with water at an arbitrary ratio is preferable.
  • the ether-based solvent is not particularly limited as long as it is a compound having an ether bond (—O—), and is, for example, diethyl ether, diisopropyl ether, dibutyl ether, t-butylmethyl ether, cyclohexylmethyl ether, tetrahydrofuran, diethylene glycol, diethylene.
  • the number of carbon atoms in the ether solvent is preferably 3 to 16, more preferably 4 to 14, and even more preferably 6
  • the alcohol solvent examples include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, ethylene glycol, propylene glycol, glycerin, 1,6-hexanediol, cyclohexanediol, sorbitol, xylitol, and the like.
  • Examples thereof include 2-methyl-2,4-pentanediol, 1,3-butanediol, and 1,4-butanediol.
  • the number of carbon atoms in the alcohol solvent is preferably 1 to 8, and more preferably 1 to 4.
  • ketone solvent examples include acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone.
  • amide solvent examples include formamide, monomethylformamide, dimethylformamide, acetamide, monomethylacetamide, dimethylacetamide, monoethylacetamide, diethylacetamide, and N-methylpyrrolidone.
  • sulfur-containing solvent examples include dimethyl sulfone, dimethyl sulfoxide, and sulfolane.
  • lactone-based solvent examples include ⁇ -butyrolactone and ⁇ -valerolactone.
  • One type of organic solvent may be used alone, or two or more types may be used. When two or more kinds of organic solvents are used, it is preferable that the total content of the two or more kinds of organic solvents is within the following range.
  • the content of the organic solvent is preferably 0.1 to 10% by mass with respect to the total mass of the composition.
  • the composition may include a pH regulator.
  • the pH adjusting agent include basic compounds and acidic compounds, which are appropriately selected according to the pH of the target composition.
  • the basic compound is a compound that is alkaline (pH is over 7.0) in an aqueous solution.
  • Examples of the basic compound include organic bases, inorganic bases, and salts thereof.
  • Examples of the organic base include a quaternary ammonium salt, a salt of an alkylamine compound and its derivative, an alkanolamine compound and a salt thereof, an amine oxide compound, a nitro compound, a nitroso compound, an oxime compound, a ketooxime compound, an aldoxime compound, and a lactam. Examples thereof include compounds and isocyanide compounds.
  • the quaternary ammonium salt as a pH adjuster is a compound different from the specific compound.
  • the quaternary ammonium salt is a salt having a quaternary ammonium cation in which four of the same hydrocarbon group (preferably an alkyl group) are substituted on the nitrogen atom.
  • Examples of the quaternary ammonium salt include hydroxides, fluorides, bromides, iodides, acetates, and carbonates.
  • quaternary ammonium salt examples include tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), or tetra.
  • TMAH tetramethylammonium hydroxide
  • TEAH tetraethylammonium hydroxide
  • TPAH tetrapropylammonium hydroxide
  • TBAH tetrabutylammonium hydroxide
  • TMAH, TEAH, TPAH, or TBAH is more preferred.
  • Examples of the inorganic base include alkali metal hydroxides such as sodium hydroxide and potassium hydroxide, alkaline earth metal hydroxides, and ammonia or salts thereof.
  • quaternary ammonium hydroxide is preferable, and TMAH or TEAH is more preferable, in terms of less metal residue after use, economy, stability of composition and the like.
  • TEAH is even more preferred.
  • the acidic compound is an acidic compound that is acidic (pH is less than 7.0) in an aqueous solution.
  • the acidic compound include inorganic acids, organic acids, and salts thereof.
  • Examples of the inorganic acid include sulfuric acid, hydrochloric acid, phosphoric acid, nitric acid, hydrofluoric acid, perchloric acid, and salts thereof, and sulfuric acid, hydrochloric acid, phosphoric acid, or nitric acid is preferable, and nitric acid, sulfuric acid, or nitric acid is preferable.
  • Hydrochloric acid is more preferred.
  • organic acids include carboxylic acids, sulfonic acids, and salts thereof.
  • carboxylic acid include lower (1 to 4 carbon atoms) aliphatic monocarboxylic acids such as formic acid, acetic acid, propionic acid, and butyric acid, and salts thereof.
  • sulfonic acid include methanesulfonic acid (MSA), benzenesulfonic acid, p-toluenesulfonic acid (tosilic acid), and salts thereof.
  • sulfuric acid, hydrochloric acid, phosphoric acid, nitric acid, sulfonic acid, or salts thereof are preferable, and sulfuric acid, hydrochloric acid, phosphoric acid, methanesulfonic acid, or p-toluenesulfonic acid is more preferable.
  • the pH adjuster one type may be used alone, or two or more types may be used in combination.
  • a commercially available one may be used, or one appropriately synthesized by a known method may be used.
  • the content of the pH adjuster is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, based on the total mass of the composition.
  • the upper limit is not particularly limited, but is preferably 20.0% by mass or less based on the total mass of the composition. It is also preferable to adjust the content of the pH adjuster within the above-mentioned suitable range so as to be within the suitable pH range of the composition described later.
  • the composition may contain a surfactant.
  • the surfactant is not particularly limited as long as it is a compound having a hydrophilic group and a hydrophobic group (lipophilic group) in one molecule, and for example, an anionic surfactant, a cationic surfactant, and a nonionic surfactant. Examples include surfactants.
  • the quaternary ammonium salt as a surfactant is a compound different from the specific compound.
  • the hydrophobic group contained in the surfactant is not particularly limited, and examples thereof include an aliphatic hydrocarbon group, an aromatic hydrocarbon group, and a combination thereof.
  • the number of carbon atoms of the hydrophobic group is preferably 6 or more, more preferably 10 or more.
  • the hydrophobic group does not contain an aromatic hydrocarbon group and is composed only of an aliphatic hydrocarbon group, the number of carbon atoms of the hydrophobic group is preferably 8 or more, more preferably 10 or more.
  • the upper limit of the number of carbon atoms of the hydrophobic group is not particularly limited, but is preferably 24 or less, and more preferably 20 or less.
  • anionic surfactant for example, an anionic surfactant having at least one hydrophilic group selected from the group consisting of a sulfonic acid group, a carboxy group, a sulfate ester group, and a phosphonic acid group in the molecule. Can be mentioned.
  • anionic surfactant having a sulfonic acid group examples include alkyl sulfonic acid, alkyl benzene sulfonic acid, alkyl naphthalene sulfonic acid, alkyl diphenyl ether sulfonic acid, fatty acid amide sulfonic acid, and salts thereof.
  • examples of the anionic surfactant having a carboxy group include polyoxyethylene alkyl ether carboxylic acid, polyoxyethylene alkyl ether acetic acid, polyoxyethylene alkyl ether propionic acid, fatty acid, and salts thereof.
  • salt of the anionic surfactant include an ammonium salt, a sodium salt, a potassium salt, and a tetramethylammonium salt.
  • the cationic surfactant is not particularly limited as long as it is a compound having a cationic hydrophilic group and the above-mentioned hydrophobic group, and for example, a quaternary ammonium salt-based surfactant and an alkylpyridium-based interface. Activators can be mentioned.
  • the surfactant one type may be used alone or two or more types may be used.
  • the content of the surfactant is preferably 0.01% by mass or more, more preferably 0.03% by mass or more, based on the total mass of the composition.
  • the upper limit is not particularly limited, it is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the composition, in terms of suppressing foaming of the composition.
  • the composition preferably contains substantially no abrasive particles.
  • the polishing particles mean particles contained in a polishing liquid used for polishing a semiconductor substrate and having an average primary particle diameter of 5 nm or more. Further, the fact that the composition does not substantially contain abrasive particles means that the average primary particle diameter contained in 1 mL of the composition when the composition is measured using a commercially available measuring device in a light scattering type in-liquid particle measuring method. It means that the number of abrasive particles having a value of 5 nm or more is 10 or less.
  • Abrasive particles include, for example, inorganic abrasive grains such as silica (including colloidal silica and fumed silica), alumina, zirconia, ceria, titania, germania, manganese oxide, and silicon carbide; polystyrene, polyacrylic acid, and poly. Examples thereof include organic abrasive grains such as vinyl chloride.
  • inorganic abrasive grains such as silica (including colloidal silica and fumed silica), alumina, zirconia, ceria, titania, germania, manganese oxide, and silicon carbide; polystyrene, polyacrylic acid, and poly.
  • organic abrasive grains such as vinyl chloride.
  • the content of the abrasive particles is measured by using a commercially available measuring device in a light scattering type submerged particle measuring method using a laser as a light source.
  • the average primary particle diameter of particles such as abrasive particles is 1000 primary particles arbitrarily selected from images taken with a transmission electron microscope TEM2010 (pressurized voltage 200 kV) manufactured by JEOL Ltd. Measure the particle size (equivalent to a circle) and calculate them by arithmetic averaging.
  • the equivalent circle diameter is the diameter of the circle assuming a perfect circle having the same projected area as the projected area of the particles at the time of observation. Examples of the method for removing the abrasive particles from the composition include purification treatment such as filtering.
  • the pH of the composition is not particularly limited, and examples thereof include the range of 1.0 to 14.0.
  • the pH of the composition is preferably 4.0 to 14.0, more preferably 7.0 to 12.0, because the effect of the present invention is more excellent.
  • the pH of the composition is obtained by measuring at 25 ° C. using a pH meter (F-51 (trade name) manufactured by HORIBA, Ltd.).
  • the composition can be filled in any container for storage, transportation and use.
  • a container having a high degree of cleanliness and less elution of impurities is preferable.
  • Examples of the container filled with the composition include a "clean bottle” series manufactured by Aicello Chemical Corporation and a "pure bottle” manufactured by Kodama Resin Industry Co., Ltd.
  • the method for producing the composition is not particularly limited, and for example, the composition can be produced by mixing each of the above components.
  • the order and / or timing of mixing each of the above components is not particularly limited.
  • an oxohaloic acid compound, a specific compound, and any necessary components are sequentially added to a stirrer such as a mixing mixer containing purified pure water, and then sufficiently stirred to mix the components.
  • a stirrer such as a mixing mixer containing purified pure water
  • Examples thereof include a method for producing a composition.
  • a method for producing the composition there are also a method of adjusting the pH of the cleaning solution in advance using a pH adjuster and then mixing each component, and a method of adjusting the pH to a set pH using a pH adjuster after mixing each component. Can be mentioned.
  • the composition is prepared by producing a concentrated solution having a lower water content than that at the time of use and diluting with a diluted solution (preferably water) at the time of use to adjust the content of each component to a predetermined content. May be manufactured.
  • the composition may be produced by diluting the concentrated solution with a diluted solution and then adjusting the pH to a set pH using a pH adjuster. When diluting the concentrated solution, a predetermined amount of the diluted solution may be added to the concentrated solution, or a predetermined amount of the concentrated solution may be added to the diluted solution.
  • the composition is used to remove transition metal inclusions (particularly Ru inclusions) on the substrate.
  • the term "on the substrate” as used herein includes, for example, the front and back surfaces of the substrate, the side surfaces, the inside of the groove, and the like. Further, the transition metal-containing material on the substrate includes not only the case where the transition metal-containing material is directly on the surface of the substrate but also the case where the transition metal-containing material is present on the substrate via another layer.
  • the transition metal-containing substance is not particularly limited as long as it is a substance containing a transition metal (transition metal atom).
  • the transition metal include Ru (ruthenium), Rh (zirconium), Ti (tungsten), Ta (tantal), Co (cobalt), Cr (chromium), Hf (hafnium), Os (osmium), Pt (platinum). ), Ni (nickel), Mn (manganese), Cu (copper), Zr (zirconium), Mo (molybdenum), La (lantern), W (tungsten), and Ir (iridium). Can be mentioned.
  • a Ru (ruthenium) -containing substance is preferable.
  • the content of Ru atoms in the Ru-containing material is preferably 10% by mass or more, more preferably 30% by mass or more, further preferably 50% by mass or more, and more preferably 90% by mass or more, based on the total mass of the Ru-containing material. Especially preferable.
  • the upper limit is not particularly limited, and is preferably 100% by mass or less with respect to the total mass of the Ru-containing material.
  • the Ru-containing substance is not particularly limited as long as it is a substance containing Ru (Ru atom), and is, for example, a simple substance of Ru, an alloy containing Ru, an oxide of Ru, a nitride of Ru, and an acid nitride of Ru. Can be mentioned.
  • the oxide, the nitride, and the oxynitride may be a composite oxide, a composite nitride, and a composite oxynitride containing Ru.
  • the object to be treated is a substrate having a transition metal-containing substance (particularly, Ru-containing substance). That is, the object to be treated includes at least a substrate and a transition metal-containing substance (particularly, Ru-containing substance) on the substrate.
  • the type of substrate is not particularly limited, but a semiconductor substrate is preferable.
  • the substrates include a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for a FED (Field Emission Display), an optical disk substrate, a magnetic disk substrate, and a magneto-optical disk.
  • the substrate can be mentioned. Examples of the material constituting the semiconductor substrate include group III-V compounds such as silicon, silicon germanium, and GaAs, and combinations thereof.
  • the application of the object to be treated with the composition of the present invention is not particularly limited, and for example, DRAM (Dynamic Random Access Memory), FRAM (registered trademark) (Ferroelectric Random Access Memory), MRAM (Magnetoric RAM) ) And PRAM (Phase change Random Access Memory), or may be used for a logic circuit, a processor, or the like.
  • DRAM Dynamic Random Access Memory
  • FRAM Registered trademark
  • MRAM Magnetic RAM
  • PRAM Phase change Random Access Memory
  • the form of the transition metal-containing material (particularly Ru-containing material) on the substrate is not particularly limited, and is, for example, a form arranged in a film shape (particularly, a Ru-containing film) or a form arranged in a wiring shape (particularly). It may be either Ru-containing wiring) or a form arranged in the form of particles.
  • the transition metal preferably contains Ru
  • the object to be treated includes a substrate and a Ru-containing film, Ru-containing wiring, or particulate Ru-containing material arranged on the substrate.
  • the object to be treated containing is preferable.
  • the Ru-containing material in the form of particles is used as a residue.
  • the Ru-containing material in the form of particles includes a substrate to which the Ru-containing film is adhered and a substrate to which the particulate Ru-containing substance is adhered as a residue after CMP (chemical mechanical polishing, chemical mechanical polishing treatment) is applied to the Ru-containing film.
  • CMP chemical mechanical polishing, chemical mechanical polishing treatment
  • the thickness of the Ru-containing film is not particularly limited and may be appropriately selected depending on the intended use. For example, 200 nm or less is preferable, 100 nm or less is more preferable, and 50 nm or less is further preferable.
  • the lower limit is not particularly limited, and is preferably 0.1 nm or more.
  • the Ru-containing film may be arranged only on one main surface of the substrate, or may be arranged on both main surfaces. Further, the Ru-containing film may be arranged on the entire main surface of the substrate, or may be arranged on a part of the main surface of the substrate.
  • the object to be treated may contain various layers and / or structures as desired, in addition to the transition metal-containing substance (particularly, Ru-containing substance).
  • a metal wiring, a gate electrode, a source electrode, a drain electrode, an insulating layer, a ferromagnetic layer, and / or a non-magnetic layer may be arranged on the substrate.
  • the substrate may include exposed integrated circuit structures. Examples of the integrated circuit structure include an interconnection mechanism such as metal wiring and a dielectric material. Examples of the metal and alloy used for the interconnection mechanism include aluminum, copper-aluminum alloy, copper, titanium, tantalum, cobalt, silicon, titanium nitride, tantalum nitride, and tungsten.
  • the substrate may include layers of silicon oxide, silicon nitride, silicon carbide, and / or carbon-doped silicon oxide.
  • the size, thickness, shape, layer structure, etc. of the substrate are not particularly limited and can be appropriately selected as desired.
  • the method for producing the object to be treated is not particularly limited, and a known production method can be used.
  • Examples of the method for producing the object to be treated include a sputtering method, a chemical vapor deposition (CVD) method, a molecular beam epitaxy (MBE) method, and an atomic layer deposition method (ALD). Deposition) can be used to form a transition metal-containing film (particularly a Ru-containing film) on a substrate.
  • transition metal-containing film particularly, Ru-containing film
  • the back surface of the substrate on which the transition metal-containing film (particularly Ru-containing film) is arranged transition metal-containing film (particularly, Ru-containing film)
  • the transition metal-containing film may also adhere to the surface on the side opposite to the Ru-containing film) side.
  • the transition metal-containing wiring may be formed on the substrate by carrying out the above method via a predetermined mask.
  • a substrate on which a transition metal-containing film (particularly Ru-containing film) or a transition metal-containing wiring (particularly Ru-containing wiring) is arranged is subjected to a predetermined treatment to be used as a object to be treated by the treatment method of the present invention. You may use it.
  • a substrate on which a transition metal-containing film (particularly Ru-containing film) or a transition metal-containing wiring (particularly Ru-containing wiring) is arranged is subjected to dry etching, and dry etching containing the transition metal (particularly Ru) is performed.
  • a substrate having a residue may be manufactured.
  • a substrate on which a transition metal-containing film (particularly Ru-containing film) or a transition metal-containing wiring (particularly Ru-containing wiring) is arranged is subjected to CMP, and a substrate having a transition metal-containing material (particularly Ru-containing material) is provided. May be manufactured.
  • the substrate treatment method of the present invention includes a step A for removing a transition metal-containing substance (particularly, Ru-containing substance) on the substrate by using the above-mentioned composition. Further, the same applies to the substrate on which the transition metal-containing material (particularly, Ru-containing material), which is the object to be treated in this treatment method, is arranged.
  • the step A there is a method of bringing the composition into contact with the substrate on which the transition metal-containing material (particularly, Ru-containing material) to be treated is arranged.
  • the method of contact is not particularly limited, and for example, a method of immersing the object to be treated in the composition placed in the tank, a method of spraying the composition on the object to be treated, a method of flowing the composition on the object to be treated, a method of flowing the composition onto the object to be treated, and the like. And a combination thereof. Of these, a method of immersing the object to be treated in the composition is preferable.
  • a mechanical stirring method may be used to further enhance the cleaning capacity of the composition.
  • Mechanical stirring methods include, for example, a method of circulating the composition on the object to be treated, a method of flowing or spraying the composition on the object to be treated, and stirring the composition by ultrasonic waves or megasonics. The method can be mentioned.
  • the processing time of step A can be adjusted as appropriate.
  • the treatment time contact time between the composition and the object to be treated
  • the temperature of the composition during the treatment is not particularly limited, but is preferably 20 to 75 ° C, more preferably 20 to 65 ° C, still more preferably 40 to 65 ° C, and particularly preferably 50 to 65 ° C.
  • step A a treatment of adding a solvent (preferably water) to the composition is carried out while measuring the concentration of the oxohaloic acid compound and / or the specific compound in the composition, if necessary. May be good. By carrying out this treatment, the concentration of the components in the composition can be stably maintained within a predetermined range.
  • a solvent preferably water
  • step A include, for example, step A1 of recess etching the Ru-containing wiring arranged on the substrate using the composition, and the outer edge of the substrate on which the Ru-containing film is arranged using the composition.
  • Step A2 for removing the Ru-containing film in the portion step A3 for removing the Ru-containing substance adhering to the back surface of the substrate on which the Ru-containing film is arranged using the composition, and on the substrate after dry etching using the composition.
  • Examples thereof include a step A4 for removing the Ru-containing material and a step A5 for removing the Ru-containing material on the substrate after the chemical and mechanical etching treatment using the composition.
  • the step A2 or the step A3 is preferable.
  • the present processing method used for each of the above processings will be described.
  • FIG. 1 shows a schematic view of the upper part of a cross section showing an example of a substrate having Ru-containing wiring (hereinafter, also referred to as “wiring substrate”) which is an object to be processed by the recess etching process of step A1.
  • the wiring board 10a shown in FIG. 1 includes a substrate (not shown), an insulating film 12 having a groove arranged on the substrate, a barrier metal layer 14 arranged along the inner wall of the groove, and Ru filled in the groove. It has a contained wiring 16.
  • the substrate in the wiring board and the Ru-containing wiring are as described above.
  • the Ru-containing wiring preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an acid nitride of Ru.
  • the material constituting the barrier metal layer in the wiring board is not particularly limited, and examples thereof include TiN and TaN. Although the aspect in which the wiring board has a barrier metal layer is described in FIG. 1, the wiring board may be a wiring board having no barrier metal layer.
  • the method for manufacturing the wiring substrate is not particularly limited, and for example, a step of forming an insulating film on the substrate, a step of forming a groove in the insulating film, a step of forming a barrier metal layer on the insulating film, and the above steps.
  • Examples thereof include a method having a step of forming a Ru-containing film so as to fill the groove and a step of applying a flattening treatment to the Ru-containing film.
  • step A1 by using the composition described above to perform recess etching treatment on the Ru-containing wiring in the wiring board, a part of the Ru-containing wiring can be removed to form a recess. More specifically, when step A1 is carried out, as shown in the wiring board 10b of FIG. 2, a part of the barrier metal layer 14 and the Ru-containing wiring 16 is removed, and the recess 18 is formed.
  • step A1 a method of bringing the composition into contact with the wiring board can be mentioned.
  • the contact method between the composition and the wiring board is as described above.
  • the optimum range of the contact time between the composition and the wiring board and the temperature of the composition is as described above.
  • Step B A step B of processing the substrate obtained in the step A1 is carried out by using a predetermined solution (hereinafter, also referred to as “specific solution”) as necessary before the step A1 or after the step A1.
  • a predetermined solution hereinafter, also referred to as “specific solution”.
  • the specific solution is preferably a solution having poor dissolving ability for Ru-containing wiring and excellent dissolving ability for substances constituting the barrier metal layer.
  • Examples of the specific solution include a mixed solution of hydrofluoric acid and hydrogen peroxide solution (FPM), a mixed solution of sulfuric acid and hydrogen peroxide solution (SPM), and a mixed solution of ammonia water and hydrogen peroxide solution (APM). , And a solution selected from the group consisting of a mixed solution (HPM) of hydrochloric acid and hydrogen peroxide solution.
  • FPM hydrofluoric acid and hydrogen peroxide solution
  • SPM sulfuric acid and hydrogen peroxide solution
  • APIAM ammonia water and hydrogen peroxide solution
  • HPM mixed solution selected from the group consisting of a mixed solution (HPM) of hydrochloric acid and hydrogen peroxide solution.
  • composition ratios is 49% by mass of hydrofluoric acid, 98% by mass of sulfuric acid, 28% by mass of ammonia water for ammonia water, 37% by mass of hydrochloric acid, and 31% by mass of hydrogen peroxide solution.
  • the composition ratio in the case of hydrogen peroxide solution is intended.
  • SPM, APM, or HPM is preferable as the specific solution from the viewpoint of the dissolving ability of the barrier metal layer.
  • APM, HPM, or FPM is preferable, and APM is more preferable, from the viewpoint of reducing roughness.
  • APM or HPM is preferable from the viewpoint of excellent performance balance.
  • step B as a method for treating the substrate obtained in step A1 using the specific solution, a method in which the specific solution and the substrate obtained in step A1 are brought into contact with each other is preferable.
  • the method of contacting the specific solution with the substrate obtained in step A1 is not particularly limited, and examples thereof include the same method as in contacting the composition with the substrate.
  • the contact time between the specific solution and the substrate obtained in step A1 is preferably, for example, 0.25 to 10 minutes, more preferably 0.5 to 5 minutes.
  • step A1 and step B may be alternately and repeatedly carried out.
  • steps A1 and B it is preferable that the steps A1 and B are each performed 1 to 10 times.
  • the first step and the last step may be either step A1 or step B.
  • the step A includes a step A2 of removing the Ru-containing film at the outer edge of the substrate on which the Ru-containing film is arranged by using the composition.
  • FIG. 3 shows a schematic view (top view) showing an example of a substrate on which the Ru-containing film, which is the object to be treated in step A2, is arranged.
  • the object 20 to be processed in step A2 shown in FIG. 3 is a laminate having a substrate 22 and a Ru-containing film 24 arranged on one main surface of the substrate 22 (the entire area surrounded by a solid line). As will be described later, in step A2, the Ru-containing film 24 located at the outer edge portion 26 (the region outside the broken line) of the object to be processed 20 is removed.
  • the substrate and the Ru-containing film in the object to be treated are as described above.
  • the Ru-containing film preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an acid nitride of Ru.
  • the specific method of the step A2 is not particularly limited, and examples thereof include a method of supplying the composition from a nozzle so that the composition comes into contact with only the Ru-containing film on the outer edge of the substrate.
  • the treatment method can be preferably applied.
  • the contact method between the composition and the object to be treated is as described above.
  • the optimum range of the contact time between the composition and the object to be treated and the temperature of the composition is as described above.
  • the step A includes a step A3 of removing the Ru-containing substance adhering to the back surface of the substrate on which the Ru-containing film is arranged by using the composition.
  • the object to be processed in step A3 include the object to be processed used in step A2.
  • the Ru-containing film is formed by sputtering, CVD or the like. At that time, the Ru-containing substance may adhere to the surface (on the back surface) on the side opposite to the Ru-containing film side of the substrate.
  • Step A3 is carried out in order to remove Ru-containing substances in such an object to be treated.
  • step A3 is not particularly limited, and examples thereof include a method of spraying the composition so that the composition comes into contact with only the back surface of the substrate.
  • the contact method between the composition and the object to be treated is as described above.
  • the optimum range of the contact time between the composition and the object to be treated and the temperature of the composition is as described above.
  • FIG. 4 shows a schematic diagram showing an example of the object to be processed in step A4.
  • the object to be processed 30 shown in FIG. 4 is provided with a Ru-containing film 34, an etching stop layer 36, an interlayer insulating film 38, and a metal hard mask 40 in this order on a substrate 32, and is in a predetermined position after undergoing a dry etching step or the like.
  • a hole 42 is formed in which the Ru-containing film 34 is exposed. That is, the object to be treated shown in FIG.
  • the 4 includes a substrate 32, a Ru-containing film 34, an etching stop layer 36, an interlayer insulating film 38, and a metal hard mask 40 in this order, and an opening of the metal hard mask 40. It is a laminate having holes 42 penetrating from the surface of the Ru-containing film 34 to the surface of the Ru-containing film 34 at the position of the portion.
  • the inner wall 44 of the hole 42 is composed of a cross-sectional wall 44a made of an etching stop layer 36, an interlayer insulating film 38, and a metal hard mask 40, and a bottom wall 44b made of an exposed Ru-containing film 34, and is a dry etching residue. 46 is attached. The dry etching residue contains Ru-containing substances.
  • the Ru-containing film preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an acid nitride of Ru.
  • the Ru-containing substance preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an acid nitride of Ru.
  • Known materials are selected as the interlayer insulating film and the metal hard mask. Although the aspect of using the metal hard mask has been described in FIG. 4, a resist mask formed by using a known photoresist material may be used.
  • step A4 include a method of bringing the composition into contact with the object to be treated.
  • the contact method between the composition and the wiring board is as described above.
  • the optimum range of the contact time between the composition and the wiring board and the temperature of the composition is as described above.
  • the step A includes a step A5 of removing Ru-containing substances on the substrate after a chemical mechanical polishing (CMP) using the composition.
  • CMP technology has been introduced into manufacturing processes such as flattening of insulating films, flattening of connection holes, and damascene wiring.
  • the substrate after CMP may be contaminated with a large amount of particles used for polishing particles, metal impurities, and the like. Therefore, it is necessary to remove and clean these contaminants before entering the next processing step. Therefore, by carrying out step A5, it is possible to remove the Ru-containing substance generated when the object to be treated of CMP has Ru-containing wiring or when it has a Ru-containing film and adheres to the substrate.
  • examples of the object to be treated in step A5 include a substrate having a Ru-containing substance after CMP.
  • the Ru-containing substance preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an acid nitride of Ru.
  • Specific examples of the step A5 include a method of bringing the composition into contact with the object to be treated.
  • the contact method between the composition and the wiring board is as described above.
  • the optimum range of the contact time between the composition and the wiring board and the temperature of the composition is as described above.
  • This treatment step may include, if necessary, a step C of rinsing the substrate obtained in step A with a rinsing solution after the step A.
  • the rinsing solution examples include hydrofluoric acid (preferably 0.001 to 1% by mass), hydrochloric acid (preferably 0.001 to 1% by mass), and hydrogen peroxide solution (preferably 0.5 to 31% by mass). Hydrogen oxide water is preferable, 3 to 15% by mass hydrogen peroxide solution is more preferable), a mixed solution of hydrofluoric acid and hydrogen peroxide solution (FPM), a mixed solution of sulfuric acid and hydrogen peroxide solution (SPM), and ammonia.
  • hydrofluoric acid preferably 0.001 to 1% by mass
  • hydrochloric acid preferably 0.001 to 1% by mass
  • hydrogen peroxide solution preferably 0.5 to 31% by mass
  • Hydrogen oxide water is preferable, 3 to 15% by mass hydrogen peroxide solution is more preferable
  • FPM hydrofluoric acid and hydrogen peroxide solution
  • SPM sulfuric acid and hydrogen peroxide solution
  • nitric acid preferably 0.001 to 1% by mass of nitric acid
  • perchloric acid preferably 0.001 to 1% by mass% perchloric acid
  • An acid aqueous solution preferably a 0.01 to 10% by mass aqueous solution
  • a periodic acid aqueous solution preferably a 0.5 to 10% by mass% periodic acid aqueous solution
  • the periodic acid includes ortho-perioic acid and meta-periodide. Acids
  • the preferred conditions for FPM, SPM, APM, and HPM are, for example, the same as the preferred embodiments for FPM, SPM, APM, and HPM used as the specific solution described above.
  • hydrofluoric acid, nitric acid, perchloric acid, and hydrochloric acid are intended to be an aqueous solution in which HF, HNO 3 , HClO 4 , and HCl are dissolved in water, respectively.
  • Ozone water, carbon dioxide water, and hydrogen water are intended as aqueous solutions in which O 3 , CO 2 , and H 2 are dissolved in water, respectively.
  • rinsing solution carbon dioxide water, ozone water, hydrogen water, hydrofluoric acid, aqueous citric acid solution, hydrochloric acid, sulfuric acid, ammonia water, and peroxidation are used because the residual chlorine on the substrate surface after the rinsing process is further reduced.
  • Hydrogen water, SPM, APM, HPM, IPA, hypochlorite aqueous solution, royal water, or FPM is preferable, and hydrofluoric acid, hydrochloric acid, hydrogen peroxide solution, SPM, APM, HPM, or FPM is more preferable.
  • a method of bringing the rinsing liquid into contact with the substrate obtained in the step A which is the object to be treated can be mentioned.
  • the contact method include a method of immersing the substrate in a rinse liquid placed in a tank, a method of spraying the rinse liquid on the substrate, a method of flowing the rinse liquid on the substrate, and an arbitrary combination method thereof. Can be mentioned.
  • the treatment time is not particularly limited, and is, for example, 5 seconds to 5 minutes.
  • the temperature of the rinsing liquid during the treatment is not particularly limited, but is generally preferably 16 to 60 ° C, more preferably 18 to 40 ° C. When SPM is used as the rinsing liquid, the temperature is preferably 90 to 250 ° C.
  • This treatment method may include a step D for carrying out a drying treatment, if necessary, after the step C.
  • the method of the drying treatment is not particularly limited, for example, spin drying, flow of dry gas on the substrate, heating means of the substrate (for example, heating with a hot plate or an infrared lamp), IPA (isopropyl alcohol) steam drying, marangoni. Drying, rotagoni drying, and combinations thereof can be mentioned.
  • the drying time can be appropriately changed depending on the specific method used, and is, for example, about 30 seconds to several minutes.
  • This treatment method may include a step D for carrying out a drying treatment, if necessary, after the step C.
  • the method of drying treatment is not particularly limited, but is limited to spin drying, flow of dry gas on the substrate, heating means of the substrate (for example, heating with a hot plate or an infrared lamp), IPA (isopropyl alcohol) steam drying, marangoni drying, rotagoni. Drying and combinations thereof can be mentioned.
  • the drying time can be appropriately changed depending on the specific method used, and is, for example, about 30 seconds to several minutes.
  • This processing method may be carried out in combination before or after other steps performed on the substrate.
  • the treatment method of the present invention may be incorporated into other steps while the present treatment method is being carried out.
  • Other steps include, for example, a step of forming each structure such as a metal wiring, a gate structure, a source structure, a drain structure, an insulating layer, a ferromagnetic layer, and / or a non-magnetic layer (for example, layer formation, etching, chemistry).
  • Mechanical polishing and modification resist forming process, exposure process and removal process, heat treatment process, cleaning process, and inspection process can be mentioned.
  • This processing method is performed at any stage of the back-end process (BOOL: Back end of the line), the middle process (MOL: Middle of the line), and the front-end process (FEOL: Front end of the line). It may be done in a front-end process or a middle process.
  • composition having the composition described in the table described later was prepared, and the following test was performed using the prepared composition.
  • all of the following components used in the preparation of the composition were products obtained from the market and classified into semiconductor grades or high-purity grades equivalent thereto. ..
  • Examples and Comparative Examples Hypochlorous acid, a specific compound, and chloride ion are added to ultrapure water at the contents shown in the table described later to prepare a mixed solution, and then the mixed solution is sufficiently stirred with a stirrer. The composition of Example 1 was obtained.
  • the compositions of Examples and Comparative Examples other than Example 1 were prepared by the same procedure as in Example 1 except that each component and the like were changed according to the table described later.
  • the chloride ion concentration in the composition having a low chloride ion concentration was measured using a concentrated column, if necessary.
  • the chloride ion contained in the composition is derived from hydrochloric acid or a salt thereof, a specific compound, a decomposition product of an oxohaloic acid compound, and an impurity mixed in the synthesis process of the specific compound.
  • a substrate on which a Ru layer (a layer composed of Ru alone) was formed by the PVD method was prepared on one surface of a commercially available silicon wafer (diameter: 12 inches). The obtained substrate was placed in a container filled with the composition of each Example or Comparative Example, and the composition was stirred to carry out the Ru layer removal treatment for 1 minute. The temperature of the composition was 25 ° C.
  • the thickness of the Ru layer before and after the treatment was measured with a fluorescent X-ray analyzer for thin film evaluation (XRF AZX-400, manufactured by Rigaku Co., Ltd.), and the etching rate of the Ru layer (from the difference in the thickness of the Ru layer before and after the treatment (XRF AZX-400, manufactured by Rigaku Co., Ltd.) ⁇ / min) was calculated.
  • the calculated etching rate of the Ru layer was evaluated according to the following evaluation criteria.
  • Etching rate is 250 ⁇ / min or more 4: Etching rate is 200 ⁇ / min or more and less than 250 ⁇ / min 3: Etching rate is 150 ⁇ / min or more and less than 200 ⁇ / min 2: Etching rate is 100 ⁇ / min or more and 150 ⁇ / min Less than 1: Etching rate less than 100 ⁇ / min
  • Metal residue ratio (%) 100 ⁇ [metal residue amount after treatment (atoms / cm 2 )] / [metal residue amount before treatment (atoms / cm 2 )) as compared with before and after treatment with the composition. )] was calculated and evaluated according to the following evaluation criteria. (Evaluation criteria) 5: Metal residue ratio is 25% or less 4: Metal residue ratio is more than 25%, 50% or less 3: Metal residue ratio is more than 50%, 75% or less 2: Metal residue ratio is more than 75%
  • the evaluation results are shown in Tables 1 and 2.
  • the "total carbon number” in the “specific compound” column indicates the total number of carbon atoms of the specific compound.
  • the column “(A) / (B)” shows the mass ratio of the content of the specific compound to the content of chloride ion.
  • the column of "pH” shows the value measured by the method according to JIS Z8802-1984 using a known pH meter when the composition is at 25 ° C.
  • the “residue” in the “water” column means that the balance other than the oxohalogen acid compound, the specific compound, and the chloride ion contained in the composition is water.
  • Example 2 to 3 and Examples 1 and 4 comparison between Examples 15 and 18 and Examples 16 to 17, comparison between Example 21 and Example 22, Examples 24 and From the comparison between 26 and Examples 25 and 27 to 28, and the comparison between Example 38 and Examples 37 and 40
  • the content of the specific compound is 3.0 with respect to the total mass of the composition. It was confirmed that the metal residue removing ability was more excellent when the content was ⁇ 25.0% by mass. From the comparison between Example 1 and the like and Example 43, it was confirmed that when the composition further contains chloride ions, the metal residue removing ability is more excellent. From the comparison between Examples 1 and the like and Examples 39 to 40, when the chloride ion content is 0.001 to 5.00% by mass with respect to the total mass of the composition, the metal residue is removed.
  • the effect of the present invention is more excellent when it contains at least one selected from the group consisting of a dipropylammonium salt, a benzyltrimethylammonium salt, a benzyltriethylammonium salt, and a triethyl (hydroxyethyl) ammonium salt. .. Further, from the comparison between Examples 2 to 3 and Examples 5 to 9, the specific compound is a group consisting of ethyltrimethylammonium salt, diethyldimethylammonium salt, methyltriethylammonium salt, and trimethyl (hydroxyethyl) ammonium salt. It was confirmed that the effect of the present invention is further excellent when at least one selected from the above is contained.
  • R 1 to R 4 are a group consisting of an alkyl group having 1 carbon number which may have a substituent and an alkyl group having 2 carbon atoms which may have a substituent.
  • the content of the oxohalogen acid compound is 0.05 to 28.0% by mass with respect to the total mass of the composition. If so, it was confirmed that the effect of the present invention is more excellent. From the comparison between Examples 1 to 10 and Example 11, it was confirmed that the effect of the present invention is more excellent when the total carbon number of R1 to R4 in the formula (1) is 4 to 15. rice field.

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WO2019142788A1 (ja) * 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
WO2020166677A1 (ja) * 2019-02-13 2020-08-20 株式会社トクヤマ オニウム塩を含む半導体ウェハの処理液

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WO2019142788A1 (ja) * 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
WO2020166677A1 (ja) * 2019-02-13 2020-08-20 株式会社トクヤマ オニウム塩を含む半導体ウェハの処理液

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