WO2022042525A1

WO2022042525A1 - Micro-electro-mechanical system magnetoresistive sensor, sensor unit and electronic device

Info

Publication number: WO2022042525A1
Application number: PCT/CN2021/114251
Authority: WO
Inventors: 邹泉波; 冷群文; 丁凯文; 赵海轮; 安琪; 周汪洋; 王喆; 宋青林
Original assignee: 歌尔微电子有限公司
Priority date: 2020-08-24
Filing date: 2021-08-24
Publication date: 2022-03-03
Also published as: CN112014778B; CN112014778A

Abstract

A micro-electro-mechanical system magnetoresistive sensor, a sensor unit and an electronic device. The micro-electro-mechanical system magnetoresistive sensor comprises: a first support member; a first magnetoresistor (42, 52) which is arranged on the first support member, a first pinning direction of the first magnetoresistor (42, 52) being an X direction; a second support member; a magnetic field forming unit (41, 51) which is arranged on the second support member and forms a magnetic field applied to the first magnetoresistor. Under the action of the physical quantity to be tested, the first support member moves relative to the second support member to generate a sensing signal. The second support member moves relative to the first support member in a Z direction. In a static work state, the magnetic field applied by the magnetic field forming unit (41, 51) to the first magnetoresistor (42, 52) has a bias magnetic field component in a Y direction.

Description

MEMS magnetoresistive sensor, sensor unit and electronic equipment

This disclosure requires the priority of a Chinese patent application with the application number of 202010858561.0 and the application title of "Micro-Electro-Mechanical System Magnetoresistive Sensor, Sensor Monomer and Electronic Device", which was filed with the China Patent Office on August 24, 2020, the entire content of which is approved by References are incorporated in this disclosure.

technical field

This specification relates to the technical field of MEMS magnetoresistive sensors, and more particularly, to a MEMS magnetoresistive sensor, a sensor unit and an electronic device.

Background technique

The resistance value of magnetoresistance can vary with the applied magnetic field. For example, magnetoresistance can be placed in a magnetic field. When the position of the magnetoresistance changes, the magnetic field applied to the magnetoresistance changes, resulting in a change in the resistance value of the magnetoresistance. Various physical quantities can be detected by providing magnetoresistive and magnetic field forming elements.

Magnetoresistance such as giant magnetoresistance, tunneling magnetoresistance includes a free layer, a spacer layer, and a pinned layer. According to the working principle of the magnetoresistance, by changing the magnetization direction of the free layer relative to the pinning direction of the pinned layer, the resistance value of the magnetoresistance can be changed.

Figure 1 shows one arrangement of magnetoresistive and current conductors. In the situation shown in FIG. 1, the current wire 11 and the magnetoresistive wire 12 have been set to work, but no physical action is applied to the magnetoresistive and current wire. The current wire 11 acts as a magnetic field forming element and forms a magnetic field applied to the magnetoresistor 12 . The magnetic field generated by the current wire 11 conforms to the right-hand spiral rule. The coordinate axes in FIG. 1 include X, Y, and Z axes. Both the current conductor 11 and the magnetoresistive 12 lie in the XY plane. The direction of the current flow in the current conductor 11 is as indicated by the arrow 13 . In this case, the magnetic field applied by the current wire 11 on the magnetoresistor 12 is perpendicular to the XY plane and in the negative direction of the Z axis. The pinning direction of the magnetoresistor 12 is the positive X-axis direction. When a physical action is applied, the current wire 11 and the magnetoresistor 12 can move relative to each other along the Z-axis. At this time, the magnetic field applied to the magnetoresistor 12 generates a component in the X-axis direction, thereby changing the resistance value of the magnetoresistor 11 .

Figure 2 shows an arrangement of reluctance and permanent magnets. In the situation shown in Fig. 2, the permanent magnet 21 and the

magnetoresistors

23, 24 have been set to an active state, however, no physical action is applied to the magnetoresistance and the permanent magnets. The direction of the magnetic field inside the permanent magnet 21 is along the positive direction of the Z-axis, as indicated by the arrow 22 . Both the permanent magnet 21 and the

reluctances

23, 24 are located in the XY plane. In this case, the magnetic field applied by the permanent magnets 21 on the

magnetoresistors

23, 24 is perpendicular to the XY plane and in the negative direction of the Z axis. The pinning directions of the

magnetoresistors

23 and 24 are both in the positive X-axis direction. When physical action is applied, the permanent magnets 21 and the

reluctances

23, 24 can move relative to each other along the Z-axis. At this time, the magnetic field applied to the

magnetoresistors

23 and 24 generates components in the X-axis direction, thereby changing the resistance values of the

magnetoresistances

23 and 24 .

SUMMARY OF THE INVENTION

Embodiments of this specification provide new technical solutions for MEMS magnetoresistive sensors.

According to a first aspect of the present specification, there is provided a MEMS magnetoresistive sensor, comprising: a first support member; a first magnetoresistance disposed on the first support member, and a first pinning direction of the first magnetoresistance is the X direction; the second support; the magnetic field forming element is arranged on the second support and forms a magnetic field applied to the first magnetoresistance, wherein, under the action of the physical quantity to be sensed, the first support is relatively The two supports move, so that the magnetic field applied by the magnetic field forming element to the first magnetoresistor changes, thereby changing the resistance value of the first magnetoresistance, thereby generating a sensing signal, and the second supporter moves relative to the first supporter The direction is the Z direction, wherein the plane formed by the X direction and the Z direction is the XZ plane, and the Y direction is perpendicular to the XZ plane, wherein, in the static working state, the magnetic field applied by the magnetic field forming element to the first magnetoresistor has a Y direction the bias magnetic field component.

According to a second aspect of the present specification, a sensor unit is provided, including a unit housing, the MEMS magnetoresistive sensor according to the embodiment, and an integrated circuit chip, wherein the MEMS magnetoresistive sensor and integrated circuit A circuit chip is arranged in the monolithic housing.

According to a third aspect of the present specification, there is provided an electronic device comprising a sensor unit according to an embodiment.

In various embodiments, by setting the Y-direction bias magnetic field component, the magnetoresistance can be prevented from being in a random magnetization state in a static operating state.

It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not limiting of the embodiments of the present specification.

In addition, any one of the embodiments of the present specification does not need to achieve all the above effects.

Other features of the embodiments of the present specification and advantages thereof will become apparent from the following detailed description of the exemplary embodiments of the present specification with reference to the accompanying drawings.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present specification or the prior art, the following briefly introduces the accompanying drawings required in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some of the embodiments described in the embodiments of the present specification. For those of ordinary skill in the art, other drawings can also be obtained according to these drawings.

FIG. 1 shows a schematic diagram of the arrangement of magnetoresistive and current wires in a prior art MEMS magnetoresistive sensor.

FIG. 2 is a schematic diagram showing the arrangement of the magnetoresistance and the permanent magnet in the MEMS magnetoresistance sensor of the prior art.

Figure 3 shows a schematic diagram of the principle of the MEMS magnetoresistive sensor disclosed herein.

FIG. 4 shows a schematic diagram of the arrangement of elements in a MEMS magnetoresistive sensor according to one embodiment.

FIG. 5 shows a schematic diagram of the arrangement of elements in a MEMS magnetoresistive sensor according to another embodiment.

Figure 6 shows a schematic diagram of the arrangement of the support according to yet another embodiment.

Figure 7 shows a schematic diagram of the arrangement of the support according to yet another embodiment.

8 shows a schematic diagram of a MEMS magnetoresistive sensor according to yet another embodiment.

9 shows a schematic diagram of a MEMS magnetoresistive sensor according to yet another embodiment.

10 shows a schematic diagram of a MEMS magnetoresistive sensor according to yet another embodiment.

Figure 11 shows a schematic diagram of a sensor cell according to one embodiment disclosed herein.

Figure 12 shows a schematic diagram of an electronic device according to one embodiment disclosed herein.

detailed description

Various exemplary embodiments will now be described in detail with reference to the accompanying drawings.

The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the disclosure, its application or uses in any way.

It should be noted that like numerals and letters refer to like items in the following figures, so once an item is defined in one figure, it does not require further discussion in subsequent figures.

In the following, various embodiments and examples of the present specification are described with reference to the accompanying drawings.

Figure 3(a) shows the general structure of magnetoresistance. The magnetoresistive layer 30 includes a free layer 31 , a spacer layer 32 and a pinned layer 33 . As shown in FIG. 3( a ), the pinning direction of the pinning layer 33 is the positive X-axis direction. The magnetic polarization direction of the free layer 31 can be changed with the external magnetic field, thereby changing the resistance value of the magnetoresistance.

FIG. 3( b ) shows the change of the resistance value of the magnetoresistor 30 with the external magnetic field when the bias magnetic field in the Y direction is not provided. In the graph of FIG. 3( b ), the horizontal axis represents the magnetic field BX along the pinning direction of the magnetoresistor 30 , and the vertical axis represents the resistance value of the magnetoresistor 30 . As shown by the solid line in Fig. 3(b), when the magnetic field BX is opposite to the pinning direction of the magnetoresistance 30, the resistance value of the magnetoresistance 30 is the maximum value Rmax; when the magnetic field BX gradually changes to the positive direction of the X axis, The resistance value of the magnetoresistor 30 gradually decreases to the minimum value Rmin. In the case where the bias magnetic field in the Y direction is not applied, when the magnetic field BX is 0, the resistance value of the magnetoresistor 30 becomes the minimum value Rmin. In the case where the magnetic field BX is negative, the magnetoresistance 30 has a linear region.

Figures 3(c) and (d) show examples of setting the bias magnetic field in the Y direction. The bias magnetic field in the Y-direction is set through the current wire 34 in FIGS. 3( c ) and ( d ). The direction of current flow in the current wire 34 is in the positive X-axis direction. The current wire 34 applies a bias magnetic field in the positive direction of the Y-axis to the magnetoresistor 30 . FIG. 3( c ) shows a top view of current lead 34 and magnetoresistance 30 , and FIG. 3(d ) shows a side view of current lead 34 and magnetoresistance 30 .

FIG. 3(e) shows the resultant magnetic field applied to the magnetoresistor 30 when the magnetic field along the X-axis is changed in the case where the bias magnetic field in the positive direction of the Y-axis is set. Arrow 35 represents the resultant magnetic field applied to magnetoresistor 30 when the magnetic field of the X-axis is zero. Arrow 36 represents the resultant magnetic field applied to the magnetoresistor 30 when the magnetic field of the X-axis is in the negative direction of the X-axis. Arrow 37 represents the resultant magnetic field applied to the magnetoresistor 30 when the magnetic field of the X-axis is in the negative direction of the X-axis.

FIG. 3( f ) shows the change of the resistance value of the magnetoresistor 30 with the magnetic field of the X axis when the bias magnetic field in the positive direction of the Y axis is set. As shown in FIG. 3( f ), when a bias magnetic field in the Y direction is applied, when the magnetic field BX is 0, the resistance value of the magnetoresistor 30 becomes an intermediate value between the maximum value Rmax and the minimum value Rmin. Under this arrangement, the magnetoresistance 30 has a linear region both when the magnetic field BX is positive and negative.

It should be noted that the XYZ coordinate system in FIG. 3 is only used to illustrate the principle of the MEMS magnetoresistive sensor disclosed herein, and different coordinate systems may be used when describing the embodiments disclosed herein below. For brevity of description, a separate current wire 34 is shown in Figures 3(c) and (d) for setting the bias magnetic field along the Y-axis direction, however, those skilled in the art will understand that the current wire 34 here 34 may be a separate current wire or a component of a magnetic field forming element that generates a bias magnetic field in the direction of the Y-axis. For example, the component may be the current conductor component of the current conductor along the X-axis direction, or may be the tilt component of the permanent magnet along the Y-axis direction.

4 and 5 are schematic diagrams showing the arrangement of elements in the MEMS magnetoresistive sensor.

The MEMS magnetoresistive sensor includes: a first support,

first magnetoresistances

42 and 52 , a second support and magnetic

field forming elements

41 and 51 . The

first magnetoresistors

42, 52 are arranged on the first support. The magnetic

field forming elements

41, 51 are arranged on the second support. In FIGS. 4 and 5 , the first support and the second support are not shown in order to illustrate the working mode of the MEMS magnetoresistive sensor. The first support member and the second support member may be a substrate, a diaphragm, a cantilever and the like.

In FIGS. 4 and 5 , the first pinning direction of the first magnetoresistors 42 and 52 is the X direction. The magnetic

field forming elements

41 and 51 form magnetic fields applied to the first magnetoresistors 42 and 52 .

Under the action of the physical quantity to be sensed, the first support member moves relative to the second support member, so that the magnetic field applied by the magnetic

field forming elements

41 and 51 to the first magnetoresistors 42 and 52 changes, thereby changing the

first magnetoresistance

42 , 52 resistance, thereby generating a sensing signal. The direction in which the second support moves relative to the first support is the Z direction. As shown in FIGS. 4 and 5 , the plane formed by the X direction and the Z direction is the XZ plane, and the Y direction is perpendicular to the XZ plane.

Here, the movement of the first support relative to the second support is relative. It may be that the first support member moves, or the second support member moves, or both the first support member and the second support member move but with different displacement amounts. Accordingly, the movements of the magnetoresistive and magnetic field forming elements are also relative.

Here, the physical quantity to be sensed may include, for example, sound pressure, pressure, acceleration, temperature, humidity, attitude, and the like. Correspondingly, the MEMS magnetoresistive sensor may be a MEMS magnetoresistive microphone, a MEMS magnetoresistive pressure sensor, a MEMS magnetoresistive acceleration sensor, a MEMS magnetoresistive temperature sensor, a MEMS magnetoresistive humidity sensor, MEMS magnetoresistive attitude sensor, etc.

In a static operating state, the magnetic field applied by the magnetic

field forming elements

41 and 51 to the first magnetoresistors 42 and 52 has a bias magnetic field component in the Y direction. The Y-direction bias magnetic field component can be generated in a number of ways. For example, the magnetic

field forming elements

41, 51 and the

first magnetoresistors

42, 52 are arranged to have an inclined angle to each other, or the magnetic

field forming elements

41, 51 are arranged to have an inclined magnetic field, or the like.

By setting the bias magnetic field component in the Y direction, in the working state, the free layers of the first magnetoresistors 42 and 52 can be biased in the middle of the linear region, so that when the external magnetic field changes along the positive/negative direction of the X axis, The

first magnetoresistors

42, 52 each have a linear region. This can improve the linear range of the MEMS magnetoresistive sensor and reduce magnetic switching noise. The bias magnetic field component in the Y direction may be, for example, in the range of 100 to 1000 Oe.

In the embodiment of Fig. 4, the current wire 41 is used as the magnetic field forming element. In FIG. 4 , the plane formed by the X direction and the Y direction is the XY plane, and the plane formed by the Y direction and the Z direction is the YZ plane. The current wire 41 is inclined relative to the XY plane in the YZ plane, thereby generating the Y-direction bias magnetic field component.

As shown in FIG. 4, the current in the current wire 41 is indicated by the arrows therein. The angle θ of the current lead inclined with respect to the XY plane in the YZ plane is greater than or equal to 0.1° and less than or equal to 10°. For example, the magnitude of the magnetic field generated by the current wire is B, then the bias magnetic field component in the Y direction is BY=Bsinθ.

In the embodiment of FIG. 5, a magnet 51 is used as the magnetic field forming element. The north-south axis of the magnet 51 is inclined with respect to the XZ plane in the YZ plane. The magnet here is any magnet that can provide a working magnetic field for the magnetoresistance in the working state. Since soft magnets, semi-hard magnets, hard magnets and other magnets all have a certain ability to retain magnetism, the magnets can be soft magnets, semi-hard magnets, or hard magnets if the application requirements are met.

As shown in FIG. 5 , the north-south axis of the magnet 51 is inclined with respect to the XZ plane by an angle θ greater than or equal to 0.1° and less than or equal to 10°, preferably, the angle θ is greater than or equal to 0.5° and less than or equal to 2°. For example, if the magnitude of the magnetic field generated by the magnet 51 is B, the bias magnetic field component in the Y direction is BY=Bsinθ.

In the embodiment of FIG. 5 , the MEMS magnetoresistive sensor further includes: a third support member and a second magnetoresistive 53 . The second magnetoresistor 53 is provided on the third support. The second pinning direction of the second magnetoresistor 53 is the X direction. The first pinning direction and the second pinning direction may be the same or different. A magnet is used as the magnetic field forming element in the embodiment of FIG. 5, and the first pinning direction and the second pinning direction may be the same (eg, both along the positive X-axis direction) to produce a differential output. Furthermore, where the magnetic field forming elements are current lines, the first pinning direction and the second pinning direction may be different, eg, along the positive and negative directions of the X-axis, respectively.

Under the action of the physical quantity to be sensed, the third support member moves relative to the second support member, so that the magnetic field applied by the magnetic field forming element 51 to the second magnetoresistor 53 changes, thereby changing the resistance value of the second magnetoresistor 53 , Thereby, a sensing signal is generated. The direction in which the second support moves relative to the third support is the Z direction. As shown in FIG. 5 , in a static operating state, the magnetic field applied by the magnetic field forming element 51 to the second magnetoresistor 53 also has a bias magnetic field component in the Y direction.

In the embodiment of FIG. 5 , the sensing signal may be generated from differential output signals of the first magnetoresistor 52 and the second magnetoresistance 53 .

Figure 6 shows a schematic diagram of the arrangement of the support according to yet another embodiment. The second support 61 is a diaphragm or a cantilever beam. A stress structure 63 is provided on the diaphragm or cantilever beam 61 so that the magnetic field forming element 62 is inclined with respect to the first magnetoresistance, thereby generating the bias magnetic field component in the Y direction. The stress structure 63 may be a tensile stress film or a compressive stress film.

Here, the magnetic field forming member 62 may be a magnet, for example, a magnetic film. Since no current needs to be supplied to the magnets, no additional noise or heat is generated when the magnets move. Therefore, in applications such as microphones, this arrangement is more advantageous.

The first support is the substrate 71 and includes a structure 73 having an inclined surface. The first magnetoresistor 72 is provided on the inclined surface so that the magnetic field forming element is inclined with respect to the first magnetoresistor 72, thereby generating the Y-direction bias magnetic field component. For example, grayscale lithography may be performed first, followed by mirror ion etching RIE, resulting in sloped surface structures 73 on the flat surface of substrate 71. The inclination angle of the inclined surface is, for example, 0.1° or more and 10° or less, preferably, 0.5° or more and 2° or less.

Since the sensing signal needs to be generated by detecting the magnetoresistance, disposing the magnetoresistance on the fixed substrate can reduce noise and/or power consumption.

In addition, the elements on the substrate 71 may also be magnetic field forming elements, eg, magnets. The magnets can be formed by deposition, patterning, on inclined surfaces.

8 shows a schematic diagram of a MEMS magnetoresistive sensor according to yet another embodiment. As shown in FIG. 8 , the MEMS magnetoresistive sensor includes a substrate 81 , a cantilever beam 82 , an element 84 and an element 83 . The substrate 81 and the cantilever beam 82 may be used as the first and second support members or the second and first support members described above, respectively. A stress structure 85 is provided on the cantilever beam 82 . The stress structure 85 may be a tensile stress film provided on the upper surface of the cantilever beam 82 or a compressive stress film on the lower surface of the cantilever beam 82 . Element 84 and element 83 may be a magnetic field forming element and a magnetoresistive or a magnetoresistive and magnetic field forming element, respectively. The magnetic field forming element is tilted with respect to the magnetoresistance by the stress structure 85 to generate a bias magnetic field component in the Y direction.

9 shows a schematic diagram of a MEMS magnetoresistive sensor according to yet another embodiment. As shown in FIG. 9 , the MEMS magnetoresistive sensor includes a substrate 91 , a diaphragm 92 , a magnetic field forming element 93 , a first magnetoresistance 95 and a second magnetoresistance 97 . The substrate 91 can be used as the first and third supporters described above. The diaphragm 92 serves as the second support.

Structures

94 , 96 with inclined surfaces are provided on the substrate 91 . A first magnetoresistor 95 and a second magnetoresistor 97 may be provided on the

structures

94, 96, respectively, with inclined surfaces to generate a Y-direction bias magnetic field component.

10 shows a schematic diagram of a MEMS magnetoresistive sensor according to yet another embodiment. As shown in FIG. 10 , the MEMS magnetoresistive sensor includes a substrate 101 ,

cantilevers

104 and 105 , an element 103 and an element 106 . Element 103 and element 106 may be a magnetic field forming element and a magnetoresistive or a magnetoresistive and magnetic field forming element, respectively. The element 103 is arranged on the structure 102 having an inclined surface. The cantilever beams 104 , 105 have an upper layer 104 and a lower layer 105 . The upper layer 104 and the lower layer 105 have different extensibility for the physical quantity to be sensed, thereby displacing the element 106 on the cantilever beam. The physical quantity to be detected here may be, for example, temperature or humidity.

Figure 11 shows a schematic diagram of a sensor cell according to one embodiment disclosed herein. The sensor unit 110 includes a unit housing 111 , the MEMS magnetoresistive sensor 112 described above, and an integrated circuit chip 113 . The MEMS magnetoresistive sensor 112 and the integrated circuit chip 113 are provided in the single housing 111 . The MEMS magnetoresistive sensor 112 may be opposed to the opening of the projectile housing 111 to sense external physical quantities. The MEMS magnetoresistive sensor 112 , the integrated circuit chip 113 and the circuits in the monolithic housing 111 are connected by leads 114 .

Figure 12 shows a schematic diagram of an electronic device according to one embodiment disclosed herein. As shown in FIG. 12 , the electronic device 120 may include the sensor unit 121 shown in FIG. 111 . The electronic device 120 may be a mobile phone, a tablet computer, a wearable device, or the like. The sensor unit 121 may be used to sense sound, pressure, acceleration, temperature, humidity, attitude, and the like.

The above are only specific implementations of the embodiments of the present specification. It should be pointed out that for those skilled in the art, without departing from the principles of the embodiments of the present specification, several improvements and modifications can be made. These Improvements and modifications should also be regarded as the protection scope of the embodiments of the present specification.

Claims

A MEMS magnetoresistive sensor, comprising:

the first support;

a first magnetoresistor disposed on the first support, and the first pinning direction of the first magnetoresistance is the X direction;

the second support;

a magnetic field forming element disposed on the second support and forming a magnetic field applied to the first magnetoresistor,

Wherein, under the action of the physical quantity to be sensed, the first support member moves relative to the second support member, so that the magnetic field applied by the magnetic field forming element to the first magnetoresistor changes, thereby changing the resistance value of the first magnetoresistance, by This generates a sensing signal, and the direction in which the second support moves relative to the first support is the Z direction,

Among them, the plane formed by the X direction and the Z direction is the XZ plane, and the Y direction is perpendicular to the XZ plane,

Wherein, in the static working state, the magnetic field applied by the magnetic field forming element to the first magnetoresistor has a bias magnetic field component in the Y direction.
The MEMS magnetoresistive sensor of claim 1, wherein the second support is a diaphragm or a cantilever beam, and

Wherein, a stress structure is arranged on the diaphragm or the cantilever beam so that the magnetic field forming element is inclined with respect to the first magnetoresistance, thereby generating the bias magnetic field component in the Y direction.
The MEMS magnetoresistive sensor of claim 1 or 2, wherein the first support is a substrate and includes a structure having an inclined surface, and the first magnetoresistive is disposed on the inclined surface such that the magnetic field forming element is relative to the inclined surface. The first magnetoresistance is tilted, thereby generating the Y-direction bias magnetic field component.
The MEMS magnetoresistive sensor according to any one of claims 1-3, wherein the plane formed by the X direction and the Y direction is the XY plane, and the plane formed by the Y direction and the Z direction is the YZ plane,

The magnetic field forming element is a current wire, and the current wire is inclined relative to the XY plane in the YZ plane, thereby generating the bias magnetic field component in the Y direction.
The MEMS magnetoresistive sensor according to any one of claims 1 to 4, wherein the angle of inclination of the current wire relative to the XY plane in the YZ plane is greater than or equal to 0.1° and less than or equal to 10°.
The MEMS magnetoresistive sensor according to any one of claims 1-5, wherein the plane formed by the Y direction and the Z direction is the YZ plane,

The magnetic field forming element is a magnet, and the north-south axis of the magnet is inclined relative to the XZ plane in the YZ plane.
The MEMS magnetoresistive sensor according to any one of claims 1 to 6, wherein the north and south axes of the magnets are inclined relative to the XZ plane by an angle greater than or equal to 0.1° and less than or equal to 10° in the YZ plane.
The MEMS magnetoresistive sensor according to any one of claims 1-7, further comprising:

a third support; and

a second magnetoresistance, disposed on the third support, and the second pinning direction of the second magnetoresistance is the X direction;

Wherein, under the action of the physical quantity to be sensed, the third support member moves relative to the second support member, so that the magnetic field applied by the magnetic field forming element to the second magnetoresistor changes, thereby changing the resistance value of the second magnetoresistance, by This generates a sensing signal, and the direction in which the second support moves relative to the third support is the Z direction,

Wherein, in the static working state, the magnetic field applied by the magnetic field forming element to the second magnetoresistor has a Y-direction bias magnetic field component.
8. The MEMS magnetoresistive sensor of any one of claims 1-8, wherein the sensing signal is generated from differential output signals of the first and second magnetoresistives.
A sensor unit, comprising a unit housing, the MEMS magnetoresistive sensor according to any one of claims 1-9, and an integrated circuit chip, wherein the MEMS magnetoresistive sensor and the integrated circuit chip are arranged in the single housing.
An electronic device comprising the sensor unit of claim 10 .