CN211089970U - MEMS sensor and electronic equipment - Google Patents
MEMS sensor and electronic equipment Download PDFInfo
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- CN211089970U CN211089970U CN201922418542.1U CN201922418542U CN211089970U CN 211089970 U CN211089970 U CN 211089970U CN 201922418542 U CN201922418542 U CN 201922418542U CN 211089970 U CN211089970 U CN 211089970U
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
Abstract
The utility model discloses a MEMS sensor and electronic equipment. The MEMS sensor includes: a first substrate and a second substrate are distributed on a plane formed by an X axis and a Y axis, and the first substrate and the second substrate are configured to generate relative vibration along a Z axis direction; a magnet having a magnetization direction in a plane formed by an X-axis and a Y-axis, the magnet being disposed on the first substrate, the magnet having a magnetic field strength greater than 8X 105Ampere/meter; a magnetoresistive device having a magnetization direction in a Z-axis direction, the magnetoresistive device being disposed on the second substrate; on the first and second substratesUnder the condition that relative vibration is generated between the substrates, the resistance value of the magnetic resistance device is changed under the action of a magnetic field generated by the magnet.
Description
Technical Field
The utility model belongs to the technical field of the transduction, specifically, the utility model relates to a MEMS sensor and applied this sensor's electronic equipment.
Background
The sensors that are currently used in the mainstream, such as microphones, pressure sensors, and displacement sensors, are all based on the principle of a flat capacitor. For example, in the structure of a microphone, the microphone generally includes a substrate, and a back plate and a diaphragm formed on the substrate, wherein a gap is formed between the back plate and the diaphragm, so that the back plate and the diaphragm together form a flat plate type capacitor sensing structure.
In the microphone with the structure, air flow resistance in the gap or the through hole due to air viscosity becomes a leading factor of noise of the MEMS microphone, so that high signal-to-noise ratio performance of the microphone is limited to a certain extent, and finally poor performance of the microphone is caused.
In addition, a sensor such as a microphone can also be formed by adopting a traditional magnetic sensor structure without a backboard. In the case of a microphone, the magnetic sensor and the magnet are respectively placed on two relatively moving planes, and the sound pressure causes the diaphragm to deform out of plane, thereby changing the gap between the magnetic sensor and the magnet. The sensor with the structure needs to accurately control the clearance of the rest position, and the position relation between the magnetic sensor and the magnet directly influences the detection accuracy of the magnetic sensor, and further influences the sensitivity of the sensor and the accuracy of converting sound into an electric signal. In such a sensor structure, the sensitivity of the sensor is significantly affected by the magnetic field intensity of the magnet, the relative position between the magnetic sensor and the magnet, and the like, and thus the processing accuracy of the processing process is required to be high.
SUMMERY OF THE UTILITY MODEL
It is an object of the present invention to provide an improved MEMS sensor.
According to a first aspect of the present invention, there is provided a MEMS sensor, comprising:
a first substrate and a second substrate are distributed on a plane formed by an X axis and a Y axis, and the first substrate and the second substrate are configured to generate relative vibration along a Z axis direction;
a magnet having a magnetization direction in a plane formed by an X-axis and a Y-axis, the magnet being disposed on the first substrate, the magnet having a magnetic field strength greater than 8X 105Ampere/meter;
a magnetoresistive device having a magnetization direction in a Z-axis direction, the magnetoresistive device being disposed on the second substrate;
under the condition that relative vibration is generated between the first substrate and the second substrate, the resistance value of the magnetic resistance device is changed under the action of a magnetic field generated by the magnet.
Optionally, the magnetoresistive device is configured to be made by a pinning annealing process in which a magnetic field in a Z-axis direction is applied to the magnetoresistive device.
Optionally, in the pinning annealing process, the annealing temperature is 250 ℃ to 300 ℃.
Optionally, the magnetic field strength of the magnet is greater than 8 x 106Ampere/meter.
Optionally, the magnet is a thin film magnet, the thickness of the magnet being greater than 0.2 microns.
Optionally, the magnetoresistive device comprises a pinning layer, a spacer layer and a permeable layer, the spacer layer being disposed on the pinning layer and the permeable layer being disposed on the spacer layer.
Optionally, the material of the spacer layer is copper.
Optionally, the magnetic memory further comprises a dielectric layer disposed on the second substrate, and the magnetoresistive device is disposed on the dielectric layer.
Optionally, the magnetic field generator further comprises an adjusting structure, gaps are left between the adjusting structure and the first substrate and between the adjusting structure and the magnet, and a height difference exists between the adjusting structure and the second substrate in the Z-axis direction;
the adjusting structure is provided with a signal which can be input so as to generate acting force between the adjusting structure and the magnet;
the first substrate and the magnet are configured to be capable of generating a positional shift in a Z-axis direction under a force generated by the adjustment structure.
Another aspect of the present invention further provides an electronic device, which employs the above MEMS sensor.
The utility model has the technical effects that the magnet is magnetized in the XY plane, and the magnetic resistance device is magnetized in the Z axis direction, so that the space utilization rate is improved.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic diagram illustrating a magnet and a magnetoresistive device of a MEMS sensor according to the present invention;
fig. 2 is a schematic side view of a MEMS sensor provided by the present invention;
fig. 3 is a schematic side view of another embodiment of a MEMS sensor according to the present invention;
fig. 4 is a schematic diagram of the adjustment structure of the MEMS sensor and the magnet.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: unless specifically stated otherwise, the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present invention.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
The present invention provides a MEMS sensor that may be a MEMS pressure sensor, MEMS gas sensor, MEMS microphone, MEMS temperature sensor, MEMS humidity sensor, MEMS displacement sensor, or other sensors known to those skilled in the art. When applied to a pressure sensor, for example, the sensitive membrane is sensitive to the external pressure, and the change of the external pressure drives the sensitive membrane to deform. When the displacement sensor is applied to a displacement sensor, a driving rod can be arranged to be connected with the sensitive membrane, and the sensitive membrane is pushed to deform through the driving rod, which is not listed.
The utility model also provides an use the electronic equipment of above-mentioned MEMS sensor, this electronic equipment can be the smart machine that field technical personnel are known such as cell-phone, panel computer, intelligent bracelet, smart glasses.
For convenience of description, the technical solution of the present invention will be described in detail by taking the MEMS microphone as an example.
The utility model discloses a MEMS sensor has adopted the cooperation sensing mode of magnet and magneto resistive device. Fig. 1 shows the relative position and fit relationship of the magnet 1 and the magnetoresistive device 2 of the MEMS sensor of the present invention. The magnet 1 is magnetized in a plane direction by a magnetization process, that is, magnetized in a plane formed by an X axis and a Y axis. The magnetic pole direction of the magnet 1 is located in a plane formed by an X axis and a Y axis.
The magnetoresistive device 2 is arranged around the magnet 1 in a position lying in a plane formed by the X-axis and the Y-axis with respect to the magnet 1. For example, the magnetoresistive device 2 is disposed around the magnet 1 in a planar direction. The magnetic field generated by the magnet 1 will pass through the magneto resistive device 2.
The magnetization direction of the magnetoresistive device is in the direction of the Z-axis, e.g. the magnetoresistive device is magnetized in the vertical direction. Through the magnetization process, the magnetic resistance device can respond to the change of the magnetic field in the Z-axis direction, and the resistance value of the magnetic resistance device can change, so that a sensing signal is generated. In an embodiment of the invention, the magneto-resistive device may be a GMR or a TMR device, for example.
The magnet 1 and the magnetic resistance device 2 are configured to generate relative displacement in the Z-axis direction, when displacement in the Z-axis direction is generated between the magnet 1 and the magnetic resistance device 2, a portion of a magnetic field generated by the magnet 1, which passes through the magnetic resistance device 2, changes, and a resistance value of the magnetic resistance device 2 changes in response, so as to generate a sensing signal.
As shown in fig. 2, the MEMS sensor has a first substrate 10 and a second substrate 20 distributed on a plane composed of an X axis and a Y axis. The magnet 1 is disposed on the first substrate 10, and the magneto-resistive device 2 is disposed on the second substrate 20. The first substrate 10 and the second substrate 20 are configured to be capable of relative movement and vibration along the Z-axis direction, and satisfy a relative displacement sensing condition required between the magnet 1 and the magnetoresistive device 2.
The utility model adopts the magnetic field intensity of the magnet 1 being more than 8 x 105Ampere/meter. By increasing the magnetic field strength of the magnet 1, it is possible to increase the resistance value change of the magnetoresistive device 2 with respect to the magnetic field change when the magnet 1 and the magnetoresistive device 2 generate relative displacement. Thus, the response capability of the magnetoresistive device is increased, and the generated sensing signal is also stronger. Moreover, because the magnetic field intensity is improved, even if the relative displacement between the magnet and the magneto-resistive device is small, the magneto-resistive device can also respond to the change of the magnetic field, the resistance value is changed, and the effect of improving the sensitivity of the MEMS sensor is achieved.
In addition, the volume and the thickness of the magnet in the direction perpendicular to the magnetization direction are increased, so that the magnetic field of the magnet can be enhanced to some extent. And the utility model discloses a technical characterstic of the in-plane polarized magnet that constitutes at XY axle, consequently, can be in the thickness of the appropriate increase magnet of Z axle direction, and then make the magnetic field intensity of magnet be higher than 8 x 105Ampere/meter, further to higher magnetic field strengths.
In this case, since the magnet and the magnetoresistive device need to generate relative displacement in the Z-axis direction, the MEMS sensor itself may leave sufficient space for the magnet and the magnetoresistive device to relatively displace in the Z-axis direction. In this case, increasing the thickness of the magnet in the Z-axis direction does not affect the space occupied by the entire MEMS sensor in the Z-axis direction. The technical scheme of the utility model can effectively improve the magnetic field intensity of magnet under the condition that does not increase holistic volume of MEMS sensor, the space that occupies, and then improve MEMS sensor's responsiveness, sensitivity to and signal strength. The performance of the MEMS sensor is comprehensively improved.
In the prior art, in order to improve the response capability and sensitivity of the MEMS sensor, the overall size of the MEMS sensor itself is often required to be increased, and particularly, the space occupied by the MEMS sensor in the lateral direction is required to be increased. This may adversely affect the size of the sensor chip, the device layout. The technical scheme of the utility model through carrying out stability control to the magnetization direction of magnet, magnetic resistance device to can be under the condition of the thickness of increase magnet, volume, need not to occupy more horizontal spaces, and then can not influence the whole size of MEMS sensor.
Alternatively, the magnetoresistive device may be fabricated by a pinning anneal process. By adopting the pinning annealing process, the magnetization direction of the magnetic resistance device can be effectively and stably fixed in a specific direction, so that the magnetization direction matching requirement between the magnetic resistance device and the magnet is met, and the response sensitivity of the magnetic resistance device to the change of the magnetic field generated by the magnet during relative displacement is improved. And when the pinning annealing process is actually executed, the magnetoresistive device is placed in a preset annealing temperature environment. For example, the annealing temperature may be in the range of 150 ℃ to 400 ℃. The magnetoresistive device is heated in the form of a heat treatment to an annealing temperature, and a magnetic field of a specific direction is applied in an environment in which the magnetoresistive device is located. Thus, under the action of temperature, the magnetoresistive device is magnetized by a magnetic field, the direction of which coincides with the direction of the magnetic field applied in the environment. Further, the magnetoresistive device is maintained in the magnetic field and temperature environment for a certain period of time, and then is gradually cooled. Alternatively, the above-described ambient magnetic field may be maintained continuously during cooling until cooling to room temperature. The magnetization degree and direction of the magnetoresistive device are fixed by the pinning annealing process described above. Even if the external magnetic field and the ambient temperature are removed, the magnetization state of the magnetoresistive device is not changed.
The utility model discloses an in the embodiment, exert the environmental magnetic field that distributes along Z axle direction in pinning annealing process in-process to make the magnetic resistance device magnetized along Z axle direction, in order to satisfy its and the cooperation relation of the magnetized magnet in XY axle plane.
Optionally, the return temperature of the pinning annealing process is 250-300 ℃. The medium-temperature goods return is carried out in the temperature range, so that on one hand, the magnetic resistance device can be fully magnetized; on the other hand, the structural performance of the magnetic resistance device can be prevented from being changed due to high temperature as much as possible.
Optionally, the magnetic field strength of the magnet is greater than 8 x 106Ampere/meter. The technical scheme of the utility model among, through magnetizing the magnet to increase the thickness of magnet in Z axle side, can effectively increase the magnetic field intensity of magnet. The magnetic field intensity is improved, so that the magneto-resistive device can make more obvious resistance value change response to slight relative displacement, and the sensitivity of the MEMS sensor is improved.
Alternatively, the magnet is formed on the first substrate using a thin film magnet, and for example, the thin film magnet may be formed using vapor deposition or the like. The thickness of the magnet may be greater than 0.2 microns to provide a stronger magnetization of the magnet in the XY plane and a magnetic field having a higher magnetic field strength. Preferably, the thickness of the magnet is greater than 0.5 microns. In the technical scheme of the utility model, because structures such as first substrate, second substrate itself have the thickness that is greater than 0.5 micron promptly. For example, the thickness of the first substrate and the second substrate may be set between 0.5 micrometers and 2.5 micrometers. In this case, in order to allow the first substrate and the second substrate to move relative to each other in the Z-axis direction, the MEMS sensor as a whole needs to have a space in the Z-axis direction that matches the dimensions of the first substrate and the second substrate, and allow both substrates to move. In this case, increasing the thickness of the magnet to 0.5 μm in the Z-axis direction does not take up too much space in the Z-axis direction, and does not affect the overall headroom and size of the MEMS sensor.
Alternatively, as shown in fig. 2, the magnetoresistive device 2 may comprise a pinned layer 21, a spacer layer 22 and a permeable layer 23. The spacer layer 22 is disposed on the pinned layer 21, and the magneto-conductive layer 23 is disposed on the spacer layer 22. The pinning layer 21 serves as a mainly magnetized structure in the magnetoresistive device 2 for inducing a magnetic field of the magnet 1. The magnetic conduction layer 23 is made of a magnetic conduction material and is used for guiding the magnetic field generated by the magnet 1 to the pinning layer 21 and improving the strength of the magnetic field passing through the pinning layer 21. The spacer layer 22 is used for bearing the magnetic conduction layer 23. Alternatively, the spacer layer 22 is made of copper, which provides good structural stability and electrical performance.
Fig. 2 shows an embodiment of the present invention, and optionally, the MEMS sensor may further include a dielectric layer 25. The dielectric layer 25 is disposed on the second substrate 20. The magneto-resistive device 2 is arranged on the dielectric layer 25. The dielectric layer 25 is capable of providing protection to the magnetoresistive device 2. On the other hand, the thickness of the dielectric layer 25 affects the height position of the magnetoresistive device 2. The process of aligning the magnetoresistive device 2 with the magnet 1 in the XY axis forming plane can be achieved by adjusting the thickness of the dielectric layer 25. A conductor layer 24 and a protective cover 3 may also be formed on the dielectric layer 25, the conductor layer 24 being configured to form an electrical connection with the magnetoresistive device 2, thereby forming a sensor circuit. The protective cover 3 may be arranged over the magneto resistive device 2 and the conductor layer 24 for providing protection.
The magnet 1 may be disposed on the first substrate 10. A gap is left between the first substrate 10 and the second substrate 20 so as to allow relative displacement therebetween. The magnet 1 may be formed with a protective cover 3.
Fig. 3 shows another embodiment of the present invention, in which the first substrate 10 forms a cantilever structure, and the magnet 1 is located at a position of the cantilever structure farther from the fixed region. In this way, the first substrate 10 and the magnets 1 carried thereon are able to develop a displacement in the Z direction with respect to the fixed second substrate 20 and the magnetoresistive device 2. In practical applications, taking the MEMS microphone as an example, the second substrate may be connected with a sound receiving component such as a diaphragm. When sound and air vibration exist around the magnet, the second substrate can vibrate along with the magnet, and the magnet is driven to vibrate. The magneto-resistive device 2 is capable of responding when the magnet vibrates, and the resistance value of the magneto-resistive device changes.
Optionally, the MEMS sensor may further comprise an adjustment mechanism. As shown in fig. 4, the adjustment mechanism is separately disposed in the MEMS sensor, and a gap is left between the adjustment mechanism 4 and the first substrate 10 and between the adjustment mechanism and the magnet 1. In the MEMS sensor, the adjustment structure 4 is disposed at a position different from the second substrate 20 in a Z-axis direction.
A signal can be applied to the adjusting structure 4, so that an electrostatic or electromagnetic force is generated between the adjusting structure and the magnet 1 and the first substrate 10. The force generated by the adjustment structure 4 can shift the position of the magnet 1 and the first substrate 10. The adjusting structure 4 is used for adjusting the height of the magnet 1 and the first substrate 10 in the Z-axis direction, so that the magnet 1 can be aligned with the magnetoresistive device 2 in the Z-axis direction. The MEMS sensor provided with the adjusting structure 4 can enable the magnetic resistance device 2 and the magnet 1 to be positioned more accurately, and the sensing accuracy is improved. Since the adjusting structure 4 has a height difference with the second substrate 20 in the Z-axis direction, the adjusting structure 4 can align the magnet with the magnetoresistive device 2 by generating a suitable force. There is no case where the component of the pulling force in the Z-axis direction generated between the adjustment structure 4 and the magnet is insufficient to pull the magnet to a position aligned with the magnetoresistive device 2 in the Z-axis direction.
Although certain specific embodiments of the present invention have been described in detail by way of example, it should be understood by those skilled in the art that the foregoing examples are for purposes of illustration only and are not intended to limit the scope of the invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (10)
1. A MEMS sensor, comprising:
a first substrate and a second substrate are distributed on a plane formed by an X axis and a Y axis, and the first substrate and the second substrate are configured to generate relative vibration along a Z axis direction;
a magnet having a magnetization direction in a plane formed by an X-axis and a Y-axis, the magnet being disposed on the first substrate, the magnet having a magnetic field strength greater than 8X 105Ampere/meter;
a magnetoresistive device having a magnetization direction in a Z-axis direction, the magnetoresistive device being disposed on the second substrate;
under the condition that relative vibration is generated between the first substrate and the second substrate, the resistance value of the magnetic resistance device is changed under the action of a magnetic field generated by the magnet.
2. The MEMS sensor of claim 1, wherein the magnetoresistive device is configured to be made by a pinning annealing process in which a magnetic field in a Z-axis direction is applied to the magnetoresistive device.
3. The MEMS sensor of claim 2, wherein in the pinning annealing process, an annealing temperature is 250-300 ℃.
4. MEMS sensor according to claim 1, wherein the magnetic field strength of the magnet is greater than 8 x 106Ampere/meter.
5. The MEMS sensor of claim 1, wherein the magnet is a thin film magnet, the magnet having a thickness greater than 0.2 microns.
6. The MEMS sensor of claim 1, wherein the magnetoresistive device includes a pinned layer, a spacer layer, and a permeable layer, the spacer layer disposed on the pinned layer, the permeable layer disposed on the spacer layer.
7. The MEMS sensor of claim 6, wherein the material of the spacer layer is copper.
8. The MEMS sensor of claim 1, further comprising a dielectric layer disposed on the second substrate, the magnetoresistive device disposed on the dielectric layer.
9. The MEMS sensor of claim 1, further comprising an adjustment structure, wherein a gap is left between the adjustment structure and the first substrate and between the adjustment structure and the magnet, and a height difference exists between the adjustment structure and the second substrate in a Z-axis direction;
the adjusting structure is provided with a signal which can be input so as to generate acting force between the adjusting structure and the magnet;
the first substrate and the magnet are configured to be capable of generating a positional shift in a Z-axis direction under a force generated by the adjustment structure.
10. An electronic device comprising a MEMS sensor according to any of claims 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922418542.1U CN211089970U (en) | 2019-12-26 | 2019-12-26 | MEMS sensor and electronic equipment |
| PCT/CN2020/082539 WO2021128636A1 (en) | 2019-12-26 | 2020-03-31 | Mems sensor and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922418542.1U CN211089970U (en) | 2019-12-26 | 2019-12-26 | MEMS sensor and electronic equipment |
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| CN211089970U true CN211089970U (en) | 2020-07-24 |
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| WO (1) | WO2021128636A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112014778A (en) * | 2020-08-24 | 2020-12-01 | 歌尔微电子有限公司 | Micro-electro-mechanical system magnetoresistive sensor, sensor single body and electronic equipment |
| CN113613152A (en) * | 2021-07-30 | 2021-11-05 | 歌尔微电子股份有限公司 | Micro-electro-mechanical system microphone, microphone monomer and electronic equipment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7126327B1 (en) * | 2005-07-22 | 2006-10-24 | Honeywell International Inc. | Asymmetrical AMR wheatstone bridge layout for position sensor |
| CN109275080B (en) * | 2018-08-06 | 2020-07-24 | 歌尔股份有限公司 | Sensor |
| CN109218870B (en) * | 2018-08-06 | 2020-05-12 | 歌尔股份有限公司 | Microphone |
| CN109941956B (en) * | 2019-02-25 | 2021-11-12 | 潍坊歌尔微电子有限公司 | MEMS sensor and electronic equipment |
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2019
- 2019-12-26 CN CN201922418542.1U patent/CN211089970U/en active Active
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112014778A (en) * | 2020-08-24 | 2020-12-01 | 歌尔微电子有限公司 | Micro-electro-mechanical system magnetoresistive sensor, sensor single body and electronic equipment |
| CN112014778B (en) * | 2020-08-24 | 2023-11-07 | 歌尔微电子有限公司 | Magneto-resistive sensor of micro-electromechanical system, sensor unit and electronic equipment |
| CN113613152A (en) * | 2021-07-30 | 2021-11-05 | 歌尔微电子股份有限公司 | Micro-electro-mechanical system microphone, microphone monomer and electronic equipment |
| CN113613152B (en) * | 2021-07-30 | 2023-06-30 | 歌尔微电子股份有限公司 | Micro-electromechanical system microphone, microphone unit and electronic equipment |
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| WO2021128636A1 (en) | 2021-07-01 |
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