WO2022035523A3 - Development of high power textured piezoelectric ceramics - Google Patents

Development of high power textured piezoelectric ceramics Download PDF

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Publication number
WO2022035523A3
WO2022035523A3 PCT/US2021/040173 US2021040173W WO2022035523A3 WO 2022035523 A3 WO2022035523 A3 WO 2022035523A3 US 2021040173 W US2021040173 W US 2021040173W WO 2022035523 A3 WO2022035523 A3 WO 2022035523A3
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Prior art keywords
piezoelectric ceramic
texturing
development
high power
piezoelectric ceramics
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PCT/US2021/040173
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French (fr)
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WO2022035523A2 (en
Inventor
Haoyang LENG
Yongke YAN
Shashank Priya
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The Penn State Research Foundation
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Priority to US17/909,468 priority Critical patent/US20230145627A1/en
Publication of WO2022035523A2 publication Critical patent/WO2022035523A2/en
Publication of WO2022035523A3 publication Critical patent/WO2022035523A3/en

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  • Compositions Of Oxide Ceramics (AREA)

Abstract

Embodiments relate to a piezoelectric ceramic and methods of making the same that is suitable for use as a high-power piezoelectric ceramic, and in particular a piezoelectric ceramic that exhibits both good hard properties and good soft properties. Embodiments involve generating the piezoelectric ceramic via the combination of chemical modification/doping and/or a texturing method so that the piezoelectric material exhibits a large figure of merit, as well as other hard and soft properties. The chemical modification involves Cu and Mn doping a piezoelectric material composition having a relaxor-lead titanate based ferroelectric structure. The texturing involves templated grain growth (TGG) texturing using a BaTiO3 (BT) template.
PCT/US2021/040173 2020-07-17 2021-07-01 Development of high power textured piezoelectric ceramics with ultrahigh electromechanical properties for large driving field applications WO2022035523A2 (en)

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Application Number Priority Date Filing Date Title
US17/909,468 US20230145627A1 (en) 2020-07-17 2021-07-01 Development of high power textured piezoelectric ceramics with ultrahigh electromechanical properties for large driving field applications

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US202062705842P 2020-07-17 2020-07-17
US62/705,842 2020-07-17

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WO2022035523A3 true WO2022035523A3 (en) 2022-03-31

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104987072A (en) * 2015-07-17 2015-10-21 哈尔滨工业大学 Lead indium niobate-lead magnesium niobate-lead titanate relaxor ferroelectric textured ceramic with high electrical properties and preparation method and application of textured ceramic
CN105084898A (en) * 2015-08-07 2015-11-25 哈尔滨工业大学 Low-temperature sintered ternary system relaxor ferroelectric ceramic material, preparation method and application of low-temperature sintered ternary system relaxor ferroelectric ceramic material
CN110078508A (en) * 2019-05-07 2019-08-02 哈尔滨工业大学 A kind of additive Mn niobium indium zincic acid lead-lead titanate piezoelectric ceramics, preparation method and applications
CN110845230A (en) * 2019-12-25 2020-02-28 西安工业大学 Ternary-system lead scandium niobate-lead magnesium niobate-lead titanate ceramic and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104987072A (en) * 2015-07-17 2015-10-21 哈尔滨工业大学 Lead indium niobate-lead magnesium niobate-lead titanate relaxor ferroelectric textured ceramic with high electrical properties and preparation method and application of textured ceramic
CN105084898A (en) * 2015-08-07 2015-11-25 哈尔滨工业大学 Low-temperature sintered ternary system relaxor ferroelectric ceramic material, preparation method and application of low-temperature sintered ternary system relaxor ferroelectric ceramic material
CN110078508A (en) * 2019-05-07 2019-08-02 哈尔滨工业大学 A kind of additive Mn niobium indium zincic acid lead-lead titanate piezoelectric ceramics, preparation method and applications
CN110845230A (en) * 2019-12-25 2020-02-28 西安工业大学 Ternary-system lead scandium niobate-lead magnesium niobate-lead titanate ceramic and preparation method thereof

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