WO2022033181A1 - 喷淋头、化学气相沉积设备及其工作方法 - Google Patents

喷淋头、化学气相沉积设备及其工作方法 Download PDF

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Publication number
WO2022033181A1
WO2022033181A1 PCT/CN2021/101428 CN2021101428W WO2022033181A1 WO 2022033181 A1 WO2022033181 A1 WO 2022033181A1 CN 2021101428 W CN2021101428 W CN 2021101428W WO 2022033181 A1 WO2022033181 A1 WO 2022033181A1
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Prior art keywords
panel
air outlet
casing
housing
rotating
Prior art date
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Ceased
Application number
PCT/CN2021/101428
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English (en)
French (fr)
Inventor
邱立峰
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Publication date
Application filed by Changxin Memory Technologies Inc filed Critical Changxin Memory Technologies Inc
Priority to US17/409,921 priority Critical patent/US20220049355A1/en
Publication of WO2022033181A1 publication Critical patent/WO2022033181A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Definitions

  • the present application relates to a shower head, chemical vapor deposition equipment and working methods thereof.
  • a chemical vapor deposition (CVD) process is mainly used to form a thin layer or film on a semiconductor substrate (eg, a wafer).
  • a semiconductor substrate eg, a wafer.
  • a chemical vapor deposition process a semiconductor substrate is exposed to a precursor gas that reacts at the surface of the semiconductor substrate and deposits reaction products thereon.
  • a first aspect of the present application provides a shower head, the shower head includes: a casing, the casing includes a first end and a second end disposed opposite to each other, the first end of the casing is One end is provided with an air inlet, the second end of the casing is provided with an air outlet panel, the panel surface of the air outlet panel is provided with several air outlet holes, and the middle part of the panel surface of the air outlet panel is opposite to the The edge portion is further away from the first end.
  • a second aspect of the present application provides a chemical vapor deposition apparatus, comprising: the showerhead, further comprising a housing for providing a vacuum environment, and a stage for mounting a semiconductor substrate, Both the shower head and the bearing platform are arranged in the casing, and the air outlet panel faces the bearing platform.
  • a third aspect of the present application provides a working method of the chemical vapor deposition apparatus, including the following steps: by adjusting the middle part of the air outlet panel surface to be away from the first end relative to the edge part To adjust the uniformity of the thin film deposited on the semiconductor substrate accordingly; uniformity of the deposited films.
  • FIG. 1 is a schematic structural diagram of one of the cone-surface inclined angle air outlet panels installed in the shower head according to an embodiment of the application.
  • FIG. 2 is a schematic structural diagram of another type of cone-surface inclined angle wind outlet panel installed on the shower head according to an embodiment of the application.
  • FIG. 3 is a schematic structural diagram of a shower head installed with another type of cone-surface inclined angle wind outlet panel according to an embodiment of the application;
  • FIG. 4 is a schematic structural diagram of a shower head according to another embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a shower head according to another embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a shower head according to still another embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a shower head according to still another embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a shower head according to still another embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of one state of the shower head according to still another embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of another state of the shower head according to still another embodiment of the present application.
  • FIG. 11 is a simplified schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present application.
  • FIG. 12 is a simplified schematic structural diagram of a chemical vapor deposition apparatus according to another embodiment of the present application.
  • the thin film deposited on the semiconductor substrate with flat surface generally has poor uniformity.
  • the unevenness of the thin film deposited on the semiconductor substrate will affect subsequent processes, such as uneven etching or uneven chemical polishing of the semiconductor substrate, which ultimately affects the quality of semiconductor products.
  • the gas outlet surface of the shower head of the conventional chemical vapor deposition equipment is a plane arranged in parallel with the semiconductor substrate, the gas outlet surface of the shower head is facing the semiconductor substrate, and the gas outlet surface of the shower head is discharged outside.
  • the gases react at the surface of the semiconductor substrate and deposit reaction products thereon.
  • the thin films formed by surface deposition of semiconductor substrates are thin in the middle and thick at the edges.
  • SACVD atmospheric pressure chemical vapor deposition
  • gas chemical vapor deposition equipment can also be used.
  • the uniformity of the deposited film can be improved by setting the shower head with special shape.
  • FIG. 1 shows a schematic structural diagram of installing one of the cone-surface inclined angle air outlet panels 113 in the shower head 10 according to an embodiment of the present application.
  • An embodiment of the present application provides a shower head 10 .
  • the shower head 10 includes a housing 11 .
  • the casing 11 includes a first end and a second end disposed opposite to each other, and the first end and the second end respectively illustrate the upper part and the lower part of the casing 11 as shown in FIG. 1 .
  • the first end of the housing 11 is provided with an air inlet 111
  • the second end of the housing 11 is provided with an air outlet panel 113 .
  • a plurality of air outlet holes 114 are provided on the board surface of the air outlet panel 113 , and the middle part of the board surface of the air outlet panel 113 is farther away from the first end than the edge part.
  • the reaction gas enters the inner cavity of the housing 11 through the air inlet 111 , and passes through the air outlet panel 113 .
  • the air outlet 114 is discharged outward and is blown toward the semiconductor substrate 30 to deposit a thin film on the surface of the semiconductor substrate 30 .
  • the middle part of the air outlet panel 113 is farther from the first end than the edge part, so the middle part of the air outlet panel 113 is close to the semiconductor substrate 30 relative to the edge part of the air outlet panel 113.
  • the particles that can be deposited in the middle are more, and the particles deposited from the middle to the edge area are gradually reduced.
  • the thickness of the middle part of the thin film deposited on the semiconductor substrate 30 can be relatively increased, so that the uniformity of the thin film deposited on the surface of the semiconductor substrate 30 can be obtained. improve.
  • the chemical vapor deposition test can be obtained by performing chemical vapor deposition experiments with different degrees of proximity of the middle portion of the air outlet panel 113 to the edge portion of the semiconductor substrate 30.
  • the middle portion of the air outlet panel 113 is closer to the semiconductor substrate 30 relative to the edge portion
  • the thickness of the middle portion of the thin film deposited on the surface of the semiconductor substrate 30 will be relatively increased.
  • FIG. 2 is a schematic diagram showing the structure of the shower head 10 according to an embodiment of the present application with another type of cone-surface inclined angle air outlet panel 113 ;
  • FIG. 3 is a schematic diagram of the present application.
  • the shower head 10 according to the embodiment is a schematic structural diagram of installing another type of cone-surface inclined angle air outlet panel 113 .
  • the air outlet panel 113 is detachably disposed on the second end of the housing 11 .
  • the dismounting manner includes, for example, using mounting elements such as screws, bolts, clips, pins, rivets and other mounting elements for detachable connection, which is not limited herein.
  • the air outlet panel 113 of different shapes can be replaced according to the actual situation.
  • the middle part of the air outlet panel 113 of different shapes is opposite to the edge
  • the extents of the positions away from the first end are different, that is, the extents close to the surface of the semiconductor substrate 30 during chemical vapor deposition are different.
  • the middle part can be selected to be farther from the air outlet panel 113 at the first end than the edge part (that is, the selection).
  • the middle part of the air outlet panel 113 is more outwardly convex), so that the middle part of the air outlet panel 113 is closer to the surface of the semiconductor substrate 30, so that the thickness of the middle part of the film deposited on the surface of the semiconductor substrate 30 will be relatively increased. Big.
  • the air outlet panel 113 that is, the selected outlet panel 113 may be selected so that the middle portion is farther away from the first end than the edge portion.
  • the degree of outward convexity of the middle part of the wind panel 113 is reduced), so that the degree of the middle part of the air outlet panel 113 being close to the surface of the semiconductor substrate 30 is reduced, so that the middle part of the thin film deposited on the surface of the semiconductor substrate 30 is reduced.
  • the thickness will be relatively reduced.
  • the air outlet panel 113 is a cone structure or a truncated cone structure. In this way, each part of the thin film deposited on the surface of the semiconductor substrate 30 is relatively uniform.
  • the surface of the showerhead 10 that is parallel to the semiconductor substrate 30 is selected as the reference surface 115.
  • the air outlet panel 113 of the pyramid structure is The angle a formed between the tapered surface of the air outlet panel 113 and the reference surface 115 of different shapes is different. When the angle a is larger, it means that the middle part of the air outlet panel 113 is closer to the edge part than the edge part.
  • the greater the extent of the semiconductor substrate 30; the smaller the included angle a the smaller the extent that the middle portion of the air outlet panel 113 is closer to the semiconductor substrate 30 than the edge portion.
  • the air outlet panel 113 can also be of other irregular shape structures, as long as the middle part of the panel surface of the air outlet panel 113 is farther away from the first end of the air outlet panel 113 than the edge part, it is not necessary here. Defining is a cone structure or a truncated cone structure.
  • FIG. 4 is a schematic structural diagram of a shower head 10 according to another embodiment of the present application.
  • the semiconductor substrate 30 is specifically a wafer
  • the main structure 116 of the casing 11 (the main structure 116 refers to the structure after the air outlet panel 113 is removed from the casing 11 ) is, for example, a cylinder, A structure in which a hemisphere or a cylinder and a hemisphere are combined, and the projection of the casing 11 on the semiconductor substrate 30 is adapted to the surface shape of the semiconductor substrate 30, so that each part on the surface of the semiconductor substrate 30 can be uniformly A thin film is deposited.
  • the main structure 116 of the housing 11 is not limited to the above structure, and may also be other irregular structures, which will not be described in detail here.
  • FIG. 5 is a schematic structural diagram of a shower head 10 according to another embodiment of the present application.
  • the showerhead 10 further includes a drive assembly 12 .
  • the air outlet panel 113 is a deformable plate
  • the drive assembly 12 is mounted on the casing 11 , and the drive assembly 12 is used to drive the middle part of the deformable plate to telescopically move in a direction away from or close to the first end.
  • the deformable plate is, for example, an elastic panel or a flexible material plate, as long as it can be deformed correspondingly under the pushing of the driving component 12 , which is not limited herein.
  • the middle part of the deformable plate is driven to move away from the first end by the driving component 12, so that the deformable plate is deformed.
  • the angle a formed between them becomes larger, which can increase the degree that the middle part of the air outlet panel 113 is far away from the first end relative to the edge part; on the contrary, when the driving assembly 12 is retracted, the elastic force After recovery, the angle a formed between the surface of the air outlet panel 113 and the reference surface 115 becomes smaller.
  • the driving assembly 12 includes a nut 121 disposed at the first end, and a screw rod 122 matched with the nut 121 .
  • One end of the screw rod 122 is located outside the casing 11 , and the other end of the screw rod 122 extends into the casing 11 and is connected to the middle part of the air outlet panel 113 .
  • the drive assembly 12 includes a push-pull rod, the push-pull rod extends through the casing 11 into the casing 11 , and the end of the push-pull rod is connected to the middle of the air outlet panel 113 . parts are connected.
  • the drive assembly 12 includes a telescopic adjustment rod disposed in the housing 11 , and the end of the telescopic adjustment rod is connected to the middle part of the air outlet panel 113 .
  • FIG. 6 is a schematic structural diagram of a shower head 10 according to still another embodiment of the present application.
  • the showerhead 10 further includes a first push assembly 13 disposed on the housing 11 .
  • the air outlet panel 113 includes a peripheral panel 1131 and a first middle panel 1132 located in a central area of the peripheral panel 1131 .
  • the peripheral panel 1131 is fixed on the second end of the casing 11 , and a first movable port 1133 is provided in the middle of the peripheral panel 1131 .
  • a first wind shielding sleeve 1134 is disposed around the edge of the first middle panel 1132 .
  • the first wind shield 1134 is movably disposed in the first movable port 1133 .
  • the first pushing assembly 13 is connected to the first middle panel 1132 for pushing the first middle panel 1132 away from or close to the first end. In this way, the position of the first middle panel 1132 can be adjusted by pushing the first middle panel 1132 through the first pushing component 13 according to the actual process requirements of chemical vapor deposition.
  • the middle portion of the air outlet panel 113 can be closer to the semiconductor substrate 30 than the edge portion of the air outlet panel 113;
  • the middle part of the air outlet panel 113 is less close to the surface of the semiconductor substrate 30 , so that the thickness of the middle part of the thin film deposited on the surface of the semiconductor substrate 30 will be reduced. relatively reduced.
  • the structure of the first push assembly 13 is similar to the structure of the drive assembly 12 in the above-mentioned embodiment, for example, a nut 121 and a screw 122 matched with the nut 121 are used, which will not be repeated here.
  • the air outlet holes 114 are evenly arranged on the peripheral panel 1131 and the first middle panel 1132 .
  • the air outlet hole 114 may or may not be opened on the wall of the first wind shielding sleeve 1134, which is not limited herein.
  • the function of the walls of the first wind shielding sleeve 1134 is to guide the gas entering at one end of the first wind shielding sleeve 1134 to the other end of the first wind shielding sleeve 1134, and from the air on the first middle panel 1132
  • the air outlet 114 discharges gas to the outside.
  • guide ribs are provided on the outer wall of the first air guide sleeve.
  • the wall of the movable port 1133 is, for example, provided with a concave portion (not shown in the figure) that is slidingly matched with the guide rib.
  • the first air guide sleeve is made into a telescopic sleeve body, one end of the sleeve body is connected to the wall of the first movable port 1133 , and the other end of the sleeve body surrounds the plate of the first middle panel 1132 Circumferential setting.
  • the sleeve body is correspondingly elongated or shortened.
  • the shower head 10 further includes a second pushing component 14 disposed on the casing 11 .
  • the air outlet panel 113 further includes a second middle panel 1135 .
  • the middle portion of the first middle panel 1132 is provided with a second movable port 1136 .
  • the edge of the second middle panel 1135 is provided with a second windshield sleeve 1137 , the second windshield sleeve 1137 is movably arranged in the second movable port 1136 , and the second push assembly 14 is connected with the second middle panel 1135 for for pushing the second middle panel 1135 away from or close to the first end.
  • the uniformity of the thin film deposited on the surface of the semiconductor substrate 30 can be improved.
  • the function of the wall of the second wind shield 1137 is to guide the gas entering one end of the second wind shield 1137 to the other end of the second wind shield 1137, and from the second middle
  • the air outlet 114 on the panel 1135 discharges gas to the outside.
  • the shower head 10 further includes a third pushing component 15 disposed on the casing 11 .
  • the air outlet panel 113 further includes a third middle panel 1138 .
  • the middle portion of the second middle panel 1135 is provided with a third movable port 1139 .
  • a third windshield sleeve 11391 is arranged around the edge of the third middle panel 1138 .
  • the third windshield sleeve 11391 is movably disposed in the third movable port 1139 .
  • the third pushing assembly 15 is connected to the third middle panel 1138 for pushing the third middle panel 1138 away from or close to the first end.
  • second push assembly 14 and the third push assembly 15 are similar to the first push assembly 13 , and will not be repeated here.
  • the second wind shield 1137 and the third wind shield 11391 are also similar to the arrangement of the first wind shield 1134, and will not be repeated here.
  • the uniformity of the thin film deposited on the surface of the semiconductor substrate 30 can be improved.
  • the number of the middle panels of the air outlet panel 113 is not limited to the first middle panel 1132, the second middle panel 1135 and the third middle panel 1138, and there may also be a fourth middle panel and a fifth middle panel, etc. Set according to actual needs.
  • the shape of each panel is not limited to a rectangle, and other shapes such as a cone or a hemisphere are applicable.
  • FIG. 7 shows a schematic structural diagram of the showerhead 10 according to another embodiment of the present application; the two dotted lines in FIG. 7 show two specific positions to which the air outlet panel 113 can be adjusted.
  • the air outlet panel 113 includes two rotating panels 11392 and two flexible panels 11393 .
  • the second end of the housing 11 is provided with an air outlet 112 .
  • One end of the two rotating panels 11392 is rotatably connected, and the other end of the rotating panels 11392 is slidably matched with the second end of the housing 11 .
  • One of the flexible boards 11393 is connected to one side and the second end of the two rotating panels 11392 respectively, and the other flexible board 11393 is connected to the other side and the second end of the two rotating panels 11392 respectively.
  • Two flexible boards 11393 and two rotating panels 11392 surround the air outlet 112 .
  • the rotating panel 11392 is provided with an air outlet 114 .
  • the air outlet 114 may or may not be provided on the flexible board 11393, which is not limited herein.
  • FIG. 8 is a schematic structural diagram of a shower head 10 according to still another embodiment of the present application; compared with FIG. 7 , a moving component 16 is added in FIG. 8 .
  • the shower head 10 further includes a moving assembly 16 disposed on the housing 11 .
  • the moving assembly 16 is used to drive and adjust the angle formed between the two rotating panels 11392 .
  • the two moving assemblies 16 are respectively disposed corresponding to the two rotating panels 11392 , and the ends of the moving assemblies 16 are provided with movable holes 161 .
  • the rotating panel 11392 is provided with a guide beam 162 , and the end of the guide beam 162 is connected to the rotating panel 11392 . In this way, when the moving assembly 16 drives the rotating panel 11392 to adjust to different angular positions, the end of the moving assembly 16 can move with the rotating panel 11392 , but is always connected to the rotating panel 11392 through the guide beam 162 .
  • the structure of the moving assembly 16 is similar to the structure of the driving assembly 12 in the above-mentioned embodiment, for example, a nut 121 and a screw 122 matched with the nut 121 are used, which will not be repeated here.
  • FIG. 9 is a schematic diagram illustrating a state structure of the shower head 10 according to still another embodiment of the present application
  • FIG. 10 is a schematic diagram illustrating the shower head according to still another embodiment of the present application.
  • the showerhead 10 further includes a moving assembly 16 disposed on the housing 11 . The moving assembly 16 is used to drive and adjust the angle formed between the two rotating panels 11392 .
  • the air outlet panel 113 includes two rotating panels 11392 , two rotating connecting plates 11394 and two flexible plates 11393 .
  • the second end of the housing 11 is provided with an air outlet 112 .
  • One end of the two rotating panels 11392 is rotatably connected to one end, and the other end of the rotating panel 11392 is rotatably connected to the second end of the housing 11 through the rotating connecting plate 11394.
  • One of the flexible plates 11393 is respectively connected to one side of the two rotating panels 11392.
  • One side and the second end of the two rotating connecting plates 11394 are connected, and the other flexible plate 11393 is respectively connected with the other side of the two rotating panels 11392, the other side and the second end of the two rotating connecting plates 11394;
  • Two flexible plates 11393 , two rotating connecting plates 11394 and two rotating panels 11392 surround the air outlet 112 .
  • the air outlet panel 113 and the rotating connecting plate 11394 are both provided with air outlet holes 114 .
  • the air outlet 114 may or may not be provided on the flexible board 11393, which is not limited herein.
  • the housing 11 is connected with an air intake pipe 17 .
  • One end of the air inlet pipe 17 is communicated with the air inlet 111 , and the other end of the air inlet pipe 17 is used for connecting to other gas supply equipment, and the gas supply equipment conveys the gas into the housing 11 through the air inlet pipe 17 .
  • the "intake pipe 17" can be “a part of the casing 11", that is, the “intake pipe 17” and the “other parts of the casing 11” are integrally formed;
  • the other part of the body 11 is an independent component that can be separated, that is, the "air intake pipe 17” can be manufactured independently, and then combined with the "other part of the housing 11” into a whole.
  • the “intake pipe 17 ” is a part of the “housing 11 ” which is integrally formed.
  • FIG. 11 is a simplified schematic diagram of a chemical vapor deposition apparatus according to an embodiment of the present application.
  • a chemical vapor deposition apparatus includes: the showerhead 10 of any one of the above-mentioned embodiments, further comprising a housing 20 for providing a vacuum environment, and a support table 40 for mounting a semiconductor substrate 30, The shower head 10 and the bearing platform 40 are both disposed in the casing 20 , and the air outlet panel 113 faces the bearing platform 40 .
  • the reaction gas enters the inner cavity of the housing 11 through the air inlet 111, and is discharged outward through the air outlet 114 of the air outlet panel 113, and blowing to the semiconductor substrate 30 to deposit a thin film on the surface of the semiconductor substrate 30 .
  • the middle part of the air outlet panel 113 is farther away from the first end than the edge part, the middle part of the air outlet panel 113 is close to the semiconductor substrate 30 relative to the edge part of the air outlet panel 113, which is relatively flat compared to the conventional flat panel 113.
  • the thickness of the middle portion of the thin film deposited on the semiconductor substrate 30 can be relatively increased, so that the uniformity of the thin film deposited on the surface of the semiconductor substrate 30 can be improved.
  • the chemical vapor deposition equipment may be a plasma-enhanced chemical vapor deposition (PECVD) equipment, an atmospheric pressure chemical vapor deposition (CVD) equipment, or a metal organic chemical vapor deposition (metal organic CVD) equipment.
  • PECVD plasma-enhanced chemical vapor deposition
  • CVD atmospheric pressure chemical vapor deposition
  • metal organic CVD metal organic chemical vapor deposition
  • the carrying table 40 is specifically, for example, a suction cup, and the diameter of the suction cup is substantially the same as that of the shower head 10 and can move vertically along the axis.
  • the movable stage 40 is used to adjust its position in the vacuum chamber.
  • a heating or cooling system may be provided in stage 40 to heat or cool semiconductor substrate 30 and/or be configured to heat or cool the walls of the vacuum chamber.
  • Plasma-enhanced chemical vapor deposition is a process that deposits thin films of various materials on semiconductor substrate 30 at temperatures lower than those of standard chemical vapor deposition (CVD).
  • a direct current (DC) power source or a radio frequency (RF) power source can be attached to the vacuum chamber to generate plasma in a plasma-enhanced chemical vapor deposition process.
  • deposition is achieved by introducing a reactive gas between parallel electrodes (RF-energized electrodes or DC electrodes and grounded electrodes).
  • the chamber may have coils to generate a higher density inductively coupled plasma.
  • the showerhead 10 of the above-described embodiments plays an important role in the uniformity of the resulting film.
  • Electrode-to-electrode capacitive coupling excites the reactive gas into a plasma, which initiates a chemical reaction and causes the reaction product to be deposited on the semiconductor substrate 30 .
  • the semiconductor substrate 30 placed on the ground electrode may be heated to 250°C to 350°C depending on specific film requirements.
  • Standard chemical vapor deposition without plasma excitation may require higher temperatures, such as heating to the range between 600°C and 800°C. Since the temperatures of chemical vapor deposition can damage the fabricated device, lower deposition temperatures are critical in many applications. Films typically deposited using plasma enhanced chemical vapor deposition are silicon nitride (SixNy), silicon dioxide (SiO2), silicon oxynitride (SiOxNy), silicon carbide (SiC), and amorphous silicon ( ⁇ -Si).
  • Silane (SiH4) silicon source gas
  • oxygen source gas to form silicon dioxide
  • silane sicon source gas
  • nitrogen source gas to form silicon nitride.
  • the oxide layer ie, plasma enhanced TEOS, PETEOS
  • the oxide layer is formed by a plasma enhanced chemical vapor deposition process using a tetraethylorthosilicate (TEOS) material. ) process). With plasma excitation, high deposition rates are obtained from ethyl orthosilicate/oxygen.
  • FIG. 12 is a simplified schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present application.
  • the chemical vapor deposition apparatus further includes a rotation mechanism 50 .
  • the rotation mechanism 50 is used to drive the stage 40 to rotate.
  • the rotating mechanism 50 drives the supporting table 40 to rotate, and accordingly drives the semiconductor substrate 30 on the supporting table 40 to rotate, which can improve the uniformity of the thin film deposited on the semiconductor substrate 30 .
  • a working method of the chemical vapor deposition apparatus of any of the above-mentioned embodiments includes the following steps: by adjusting the degree that the middle part of the surface of the air outlet panel 113 is far away from the first end relative to the edge part, The uniformity of the thin film deposited on the semiconductor substrate 30 is adjusted accordingly; uniformity of the deposited films.
  • the working method of the above-mentioned chemical vapor deposition equipment compared with the traditional flat air outlet panel 113, can realize that the thickness of the middle part of the film deposited on the semiconductor substrate 30 is relatively increased, so that the surface of the semiconductor substrate 30 can be relatively thick. The uniformity of the film deposited on it is improved.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature delimited with “first”, “second” may expressly or implicitly include at least one of that feature.
  • plurality means at least two, such as two, three, etc., unless expressly and specifically defined otherwise.
  • the terms “installed”, “connected”, “connected”, “fixed” and other terms should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection , or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between the two elements, unless otherwise specified limit.
  • installed may be a fixed connection or a detachable connection , or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between the two elements, unless otherwise specified limit.
  • a first feature "on” or “under” a second feature may be in direct contact with the first and second features, or the first and second features indirectly through an intermediary touch.
  • the first feature being “above”, “over” and “above” the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is level higher than the second feature.
  • the first feature being “below”, “below” and “below” the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature has a lower level than the second feature.

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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

本申请涉及一种喷淋头、化学气相沉积设备及其工作方法，喷淋头包括壳体。壳体的第二端设有出风面板，出风面板的板面上设有若干个出气孔，出风面板板面的中部部位相对于边缘部位更加远离于第一端。在对半导体衬底进行化学气相沉积工作时，反应气体通过进气口进入到壳体的内腔，并通过出风面板的出气孔向外排放，并吹向半导体衬底在半导体衬底的表面上沉积形成薄膜。

Description

喷淋头、化学气相沉积设备及其工作方法
相关申请交叉引用
本申请要求2020年08月14日递交的、标题为“喷淋头、化学气相沉积设备及其工作方法”、申请号为202010816497X的中国申请，其公开内容通过引用全部结合在本申请中。
技术领域
本申请涉及一种喷淋头、化学气相沉积设备及其工作方法。
背景技术
在集成电路(integrated circuit，IC)的制作中，主要采用化学气相沉积(chemical vapordeposition，CVD)工艺在半导体衬底(例如晶圆)上形成薄层或薄膜。在化学气相沉积工艺中，半导体衬底被暴露至前体气体(precursor gas)，前体气体在半导体衬底的表面处进行反应并在其上沉积反应产物。
发明内容
根据多个实施例，本申请第一方面提供一种喷淋头，所述喷淋头包括：壳体，所述壳体包括相对设置的第一端与第二端，所述壳体的第一端设有进气口，所述壳体的第二端设有出风面板，所述出风面板的板面上设有若干个出气孔，所述出风面板板面的中部部位相对于边缘部位更加远离于所述第一端。
根据多个实施例，本申请第二方面提供一种化学气相沉积设备，包括：所述的喷淋头，还包括用于提供真空环境的外壳，以及用于装设半导体衬底的承载台，所述喷淋头与所述承载台均设置于所述外壳内，所述出风面板对着所述承载台。
根据多个实施例，本申请第三方面提供一种所述的化学气相沉积设备的工作方法，包括如下步骤：通过调整出风面板板面的中部部位相对于边缘部位远离于所述第一端的程度，来相应调整在半导体衬底上沉积的薄膜的均匀性；或者，通过调整出风面板板面的中部部位与出风面板的边缘部位之间的高度差，来相应调整在半导体衬底上沉积的薄膜的均匀性。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其它特征和优点将从说明书、附图以及权利要求书变得明显。
附图说明
构成本申请的一部分的附图用来提供对本申请的进一步理解，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一实施例所述的喷淋头装设其中一种锥面倾斜角度出风面板的结构示意图。
图2为本申请一实施例所述的喷淋头装设另一种锥面倾斜角度出风面板的结构示意图。
图3为本申请一实施例所述的喷淋头装设又一种锥面倾斜角度出风面板的结构示意图；
图4为本申请另一实施例所述的喷淋头的结构示意图。
图5为本申请又一实施例所述的喷淋头的结构示意图。
图6为本申请再一实施例所述的喷淋头的结构示意图。
图7为本申请再一实施例所述的喷淋头的结构示意图。
图8为本申请再一实施例所述的喷淋头的结构示意图。
图9为本申请再一实施例所述的喷淋头的其中一个状态结构示意图。
图10为本申请再一实施例所述的喷淋头的另一个状态结构示意图。
图11为本申请一实施例所述的化学气相沉积设备的简化结构示意图。
图12为本申请另一实施例所述的化学气相沉积设备的简化结构示意图。
具体实施方式
在实际沉积过程中，在表面平整的半导体衬底上沉积得到的薄膜普遍会出现均匀度较差的情况。半导体衬底上沉积的薄膜不均匀会影响后续工艺，如使得刻蚀出现不均匀情况或者半导体衬底化学研磨出现不均匀情况，最终影响半导体产品质量。
为使本申请的上述目的、特征和优点能够更加明显易懂，下面结合附图对本申请的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本申请。但是本申请能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本申请内涵的情况下做类似改进，因此本申请不受下面公开的具体实施例的限制。
一般而言，传统的化学气相沉积设备的喷淋头的出气面为与半导体衬底相平行设置的平面，喷淋头的出气面正对着半导体衬底，喷淋头的出气面外排的气体在半导体衬底的表面处进行反应并在其上沉积反应产物。然而，半导体衬底的表面沉积形成的薄膜为中部薄边缘厚。
本例中，以大气压化学气相沉积(SACVD)设备为例，此外也可以采用气体化学气相沉积设备。通过设定特殊形状的喷淋头，提高沉积薄膜的均匀性。
基于此，参阅图1，图1示意出了本申请一实施例的喷淋头10装设其中一种锥面倾斜角度出风面板113的结构示意图。本申请一实施例提供的一种喷淋头10，喷淋头10包括壳体11。壳体11包括相对设置的第一端与第二端，第一端与第二端分别如图1所示意出壳体11的上侧部位与下侧部位。壳体11的第一端设有进气口111，壳体11的第二端设有出风面板113。出风面板113的板面上设有若干个出气孔114，出风面板113板面的中部部位相对于边缘部位更加远离于第一端。
上述的喷淋头10，在对半导体衬底30(如图11所示)进行化学气相沉积工作时，反应气体通过进气口111进入到壳体11的内腔，并通过出风面板113的出气孔114向外排放，并吹向半导体衬底30在半导体衬底30的表面上沉积形成薄膜。其中，由于出风面板113的中部部位相对于边缘部位更加远离于第一端，如此出风面板113的中部部位相对于出风面板113的边缘部位靠近于半导体衬底30，在沉积的时候，能够实现中部沉积的粒子较多，从中部到边缘区域沉积的粒子逐渐减少。相对于传统采用平整的出风面板而言，能实现半导体衬底30上沉积得到的薄膜的中部部位厚度相对增大，这样在半导体衬底30的表面上进行沉积得到的薄膜的均匀性便得到改善。
需要说明的是，以出风面板113的中部部位相对于边缘部位对半导体衬底30的不同靠近程度进行化学气相沉积试验可以得到，当出风面板113的中部部位相对于边缘部位越靠近于半导体衬底30时，半导体衬底30的表面上沉积得到的薄膜的中部部位厚度将相对增大。
请参阅图1至图3，图2示意出了本申请一实施例所述的喷淋头10装设另一种锥面 倾斜角度出风面板113的结构示意图；图3示意出了本申请一实施例所述的喷淋头10装设又一种锥面倾斜角度出风面板113的结构示意图。进一步地，出风面板113可拆卸地设置于壳体11的第二端。其中，拆卸方式例如包括采用例如螺钉、螺栓、卡接件、销钉、铆钉等安装件进行可拆卸式连接，在此不进行限定。当出风面板113可拆卸地装设于壳体11的第二端时，可以根据实际情况更换不同形状的出风面板113，具体而言，不同形状的出风面板113的中部部位相对于边缘部位远离于第一端的程度不同，也就是在化学气相沉积时靠近于半导体衬底30表面的程度不同。当需要增加半导体衬底30(如图11所示)表面上沉积得到的薄膜的中部部位厚度时，可以选择中部部位相对于边缘部位更加远离于第一端的出风面板113(也即是选择的出风面板113的中部部位更加向外凸)，这样出风面板113的中部部位更加靠近于半导体衬底30表面，使得半导体衬底30的表面上沉积得到的薄膜的中部部位厚度将相对增大。反之，当需要减小半导体衬底30表面上沉积得到的薄膜的中部部位厚度时，可以选择中部部位相对于边缘部位远离第一端的程度更小的出风面板113(也即是选择的出风面板113的中部部位向外凸的程度减小)，这样出风面板113的中部部位靠近于半导体衬底30表面的程度减小，使得半导体衬底30的表面上沉积得到的薄膜的中部部位厚度将相对减小。
请参阅图1至图3，在一个实施例中，出风面板113为锥体结构或圆锥台结构。如此，在半导体衬底30的表面上沉积得到的薄膜各个部位较为均匀。当喷淋头10正对半导体衬底30进行化学气相沉积工作时，选取喷淋头10上平行于半导体衬底30的面为参考面115，具体而言，锥体结构的出风面板113为多个，不同形状的出风面板113的锥型面与参考面115之间形成的夹角a不同，当夹角a越大时，意味着出风面板113的中部部位相对于边缘部位靠近于半导体衬底30的程度越大；当夹角a越小时，表示出风面板113的中部部位相对于边缘部位靠近于半导体衬底30的程度越小。
可选地，出风面板113也可以是其它不规则的形状结构，只要出风面板113的板面的中部部位相对于边缘部位更加远离于出风面板113的第一端即可，在此不进行限定是锥体结构或圆锥台结构。
请参阅图1及图4，图4示意出了本申请另一实施例所述的喷淋头10的结构示意图。需要说明的是，本实施例中半导体衬底30具体是晶圆，壳体11的主体结构116(主体结构116指的是壳体11上去除出风面板113以后的结构)例如为圆柱体、半球体或者圆柱体与半球体相结合的结构体，壳体11在半导体衬底30上投影与半导体衬底30的表面形状相适应，如此能实现半导体衬底30的表面上的各个部位均匀地沉积得到薄膜。当然，壳体11的主体结构116也不限于是上述结构，还可以是其它不规则结构，在此不进行赘述。
请参阅图5，图5示意出了本申请又一实施例所述的喷淋头10的结构示意图。在另一个实施例中，喷淋头10还包括驱动组件12。出风面板113为可变形板，驱动组件12装设于壳体11上，驱动组件12用于驱动可变形板的中部部位朝向远离或靠近于第一端的方向伸缩移动。具体而言，可变形板例如为弹性面板或柔性材质板，只要能在驱动组件12的推动下相应发生变形即可，在此不进行限定。以可变形板为弹性面板为例进行说明，通过驱动组件12驱动可变形板的中部部位朝向远离于第一端的方向移动，使可变形板发生形变，出风面板113板面与参考面115之间形成的夹角a变大，能实现增大出风面板113板面的中部部位相对于边缘部位远离于第一端的程度；反之，驱动组件12缩回时，可变形板在弹性力作用下恢复，出风面板113板面与参考面115之间形成的夹角a变小。
进一步地，驱动组件12包括设置于第一端的螺母121，及与螺母121配合的螺杆122。螺杆122的一端位于壳体11外，螺杆122的另一端伸入到壳体11内并与出风面板113的中部部位相连。
作为一个示例，不同于上述螺母121及螺杆122配合的组合结构，驱动组件12包括 推拉杆，推拉杆贯穿壳体11伸入到壳体11内，推拉杆的端部与出风面板113的中部部位相连。作为另一个示例，不同于上述螺母121及螺杆122配合的组合结构，驱动组件12包括设置于壳体11内的伸缩调节杆，伸缩调节杆的端部与出风面板113的中部部位相连。
请参阅图6，图6示意出了本申请再一实施例所述的喷淋头10的结构示意图。在一个实施例中，喷淋头10还包括设置于壳体11上的第一推动组件13。出风面板113包括外围面板1131及位于外围面板1131的中部区域的第一中部面板1132。外围面板1131固定设于壳体11的第二端，外围面板1131的中部部位设有第一活动口1133。第一中部面板1132的板缘绕设有第一挡风套1134。第一挡风套1134可活动地设置于第一活动口1133中。第一推动组件13与第一中部面板1132相连，用于推动第一中部面板1132远离或者靠近第一端。如此，可以根据化学气相沉积的实际工艺需求，通过第一推动组件13推动第一中部面板1132调整第一中部面板1132的位置。当第一推动组件13推动第一中部面板1132远离第一端时，便能够实现出风面板113的中部部位相对于出风面板113的边缘部位靠近于半导体衬底30；反之，当第一推动组件13推动第一中部面板1132靠近第一端时，出风面板113的中部部位靠近于半导体衬底30表面的程度减小，使得半导体衬底30的表面上沉积得到的薄膜的中部部位厚度将相对减小。
需要说明的是，第一推动组件13的结构类似于上述实施例中的驱动组件12的结构，例如采用螺母121及与螺母121相配合螺杆122，在此不再进行赘述。
需要说明的是，为了提高在半导体衬底30上沉积得到的薄膜的均匀性，出气孔114均匀地布置于外围面板1131及第一中部面板1132上。此外，第一挡风套1134的壁上可以开设出气孔114，也可以不进行开设，在此不进行限定。
需要说明的是，第一挡风套1134的壁的作用是，实现第一挡风套1134其中一端进入的气体导向到第一挡风套1134的另一端，并从第一中部面板1132上的出气孔114向外排放气体。
在一个实施例中，为了保证第一导风套在第一活动口1133处较好的移动效果，第一导风套的外壁上例如设置有导向筋条(图中未示出)，第一活动口1133口壁上例如设有与导向筋条滑动配合的凹部(图中未示出)。此外，在另一个实施例中，第一导风套做成伸缩式的套体，套体的一端与第一活动口1133口壁相连，套体的另一端则绕第一中部面板1132的板缘周向设置。当第一推动组件13推动第一中部面板1132时，套体相应伸长或缩短。
请再参阅图6，进一步地，喷淋头10还包括设置于壳体11上的第二推动组件14。出风面板113还包括第二中部面板1135。第一中部面板1132的中部部位设有第二活动口1136。第二中部面板1135的板缘绕设有第二挡风套1137，第二挡风套1137可活动地设置于第二活动口1136中，第二推动组件14与第二中部面板1135相连，用于推动第二中部面板1135远离或者靠近第一端。如此，能提高半导体衬底30的表面上进行沉积得到的薄膜的均匀性。
类似于第一挡风套1134，第二挡风套1137的壁的作用是，实现第二挡风套1137其中一端进入的气体导向到第二挡风套1137的另一端，并从第二中部面板1135上的出气孔114向外排放气体。
请再参阅图6，进一步地，喷淋头10还包括设置于壳体11上的第三推动组件15。出风面板113还包括第三中部面板1138。第二中部面板1135的中部部位设有第三活动口1139。第三中部面板1138的板缘绕设有第三挡风套11391。第三挡风套11391可活动地设置于第三活动口1139中。第三推动组件15与第三中部面板1138相连，用于推动第三中部面板1138远离或者靠近第一端。
需要说明的是，第二推动组件14与第三推动组件15类似于第一推动组件13设置，在此不进行赘述。第二挡风套1137与第三挡风套11391同样类似于第一挡风套1134的设 置方式，在此不再赘述。
需要说明的是，当出风面板113的中部面板数量越多，且为由外围至中性依次套设设置时，能有利于提高半导体衬底30的表面上进行沉积得到的薄膜的均匀性。出风面板113的中部面板的数量在此不进行限制为第一中部面板1132、第二中部面板1135及第三中部面板1138，还可以有第四中部面板与第五中部面板等等，具体可以实际需求进行设置。此外，各个面板的形状不局限为矩形，且适用于锥形体或半球体等其他形状。
请参阅图7，图7示意出了本申请再一实施例所述的喷淋头10的结构示意图；图7中两个虚线示意的为出风面板113可以调整到的两个具体位置。在一个实施例中，出风面板113包括两个转动面板11392及两个柔性板11393。壳体11的第二端设有出气口112。两个转动面板11392的一端可转动相连，转动面板11392的另一端与壳体11的第二端滑动配合。其中一个柔性板11393分别与两个转动面板11392的其中一侧以及第二端相连，另一个柔性板11393分别与两个转动面板11392的另一侧以及第二端相连。两个柔性板11393与两个转动面板11392围住出气口112。其中，转动面板11392上设有出气孔114。柔性板11393上可以设置出气孔114，也可以不进行设置，在此不进行限定。
如此，通过调整两个转动面板11392之间的角度，能实现调节两个转动面板11392的连接部位(对应于出风面板113的中部部位)相对于边缘部位远离第一端的程度。
请参阅图8，图8示意出了本申请再一实施例所述的喷淋头10的结构示意图；相对于图7而言，图8中增加了移动组件16。进一步地，喷淋头10还包括设置于壳体11上的移动组件16。移动组件16用于驱动调整两个转动面板11392之间形成的角度。具体而言，移动组件16为两个，两个移动组件16分别与两个转动面板11392对应设置，移动组件16的端部设有活动孔161。转动面板11392上设有导向梁162，导向梁162的端部与转动面板11392相连，导向梁162与转动面板11392间隔设置，导向梁162穿设于活动孔161中。如此，在移动组件16驱动转动面板11392调整到不同的角度位置时，移动组件16的端部可以与转动面板11392发生位置移动，但是始终通过导向梁162与转动面板11392相连。
需要说明的是，移动组件16的结构类似于上述实施例中的驱动组件12的结构，例如采用螺母121及与螺母121相配合螺杆122，在此不再进行赘述。
请参阅图9与图10，图9示意出了本申请再一实施例所述的喷淋头10的其中一个状态结构示意图；图10示意出了本申请再一实施例所述的喷淋头10的另一个状态结构示意图。图9与图10相对于图8而言，区别在于，图9与图10中示意出的喷淋头10增加了转动连接板11394，使得转动面板11392与第二端的连接方式发生改变。在另一个实施例中，喷淋头10还包括设置于壳体11上的移动组件16。移动组件16用于驱动调整两个转动面板11392之间形成的角度。出风面板113包括两个转动面板11392、两个转动连接板11394及两个柔性板11393。壳体11的第二端设有出气口112。两个转动面板11392的一端可转动相连，转动面板11392的另一端通过转动连接板11394与壳体11的第二端可转动相连，其中一个柔性板11393分别与两个转动面板11392的其中一侧、两个转动连接板11394的其中一侧以及第二端相连，另一个柔性板11393分别与两个转动面板11392的另一侧、两个转动连接板11394的另一侧以及第二端相连；两个柔性板11393、两个转动连接板11394及两个转动面板11392围住出气口112。其中，出风面板113与转动连接板11394均设有出气孔114。柔性板11393上可以设置出气孔114，也可以不进行设置，在此不进行限定。
在一个实施例中，壳体11连接有进气管17。进气管17的一端与进气口111相连通，进气管17的另一端用于接入其它气体供应设备，气体供应设备通过进气管17将气体输送到壳体11内。
需要说明的是，在侵权对比中，该“进气管17”可以为“壳体11的一部分”，即“进 气管17”与“壳体11的其他部分”一体成型制造；也可以与“壳体11的其他部分”可分离的一个独立的构件，即“进气管17”可以独立制造，再与“壳体11的其他部分”组合成一个整体。如图1所示，一实施例中，“进气管17”为“壳体11”一体成型制造的一部分。
请参阅图1及图11，图11示意出了本申请一实施例所述的化学气相沉积设备的简化结构示意图。在一个实施例中，一种化学气相沉积设备，包括：上述任一实施例喷淋头10，还包括用于提供真空环境的外壳20，以及用于装设半导体衬底30的承载台40，喷淋头10与承载台40均设置于外壳20内，出风面板113对着承载台40。
上述的化学气相沉积设备，在对半导体衬底30进行化学气相沉积工作时，反应气体通过进气口111进入到壳体11的内腔，并通过出风面板113的出气孔114向外排放，并吹向半导体衬底30在半导体衬底30的表面上沉积形成薄膜。其中，由于出风面板113的中部部位相对于边缘部位更加远离于第一端，如此出风面板113的中部部位相对于出风面板113的边缘部位靠近于半导体衬底30，相对于传统采用平整的出风面板113而言，能实现半导体衬底30上沉积得到的薄膜的中部部位厚度相对增大，这样在半导体衬底30的表面上进行沉积得到的薄膜的均匀性便得到改善。
化学气相沉积设备可为等离子体增强型化学气相沉积(plasma-enhanced chemical vapor deposition，PECVD)设备、大气压化学气相沉积(atmospheric pressure，CVD)设备或金属有机化学气相沉积(metal organic CVD)设备。
需要说明的是，承载台40具体例如为吸盘，吸盘的直径与喷淋头10的直径实质上相同且可沿轴线垂直地移动。可移动的承载台40用于调整其在真空室中的位置。加热系统或冷却系统可设置在承载台40中，以加热或冷却半导体衬底30及/或被配置成加热或冷却真空室的壁。等离子体增强型化学气相沉积是一种工艺，其可在比标准化学气相沉积(CVD)的温度低的温度下在半导体衬底30上沉积各种材料的薄膜。可将直流(direct current，DC)电源或射频(radio frequency，RF)电源附接到真空室，以在等离子体增强型化学气相沉积工艺中生成等离子体。在等离子体增强型化学气相沉积工艺中，沉积是通过在平行的电极(射频激励电极(RF-energized electrode)或直流电极与接地电极(grounded electrode))之间引入反应气体来实现。或者，腔室可具有线圈以生成较高密度的经电感耦合等离子体。在任一种情形中，上述实施例的喷淋头10在所得膜均匀性方面起着重要作用。电极与电极之间的电容耦合将反应气体激发成等离子体，此会引发化学反应且使得反应产物沉积在半导体衬底30上。根据特定膜要求，放置在接地电极上的半导体衬底30可被加热到250℃到350℃。
相比之下，不进行等离子体激发(plasma excitation)的标准化学气相沉积可能需要更高的温度，例如加热到在600℃与800℃之间的范围。由于化学气相沉积的温度可能损坏被制作的装置，因此，在许多应用中较低的沉积温度是至关重要的。通常使用等离子体增强型化学气相沉积来沉积的膜是氮化硅(SixNy)、二氧化硅(SiO2)、氮氧化硅(SiOxNy)、碳化硅(SiC)及非晶硅(α-Si)。硅烷(SiH4)(硅来源气体)与氧来源气体进行组合以形成二氧化硅，或者是硅烷(硅来源气体)与氮来源气体进行组合从而形成氮化硅。在一些实施例中，使用正硅酸乙酯(tetraethylorthosilicate，TEOS)材料并通过等离子体增强型化学气相沉积工艺来形成氧化物层(即等离子体增强型正硅酸乙酯(plasma enhanced TEOS，PETEOS)工艺)。通过等离子体激发，会从正硅酸乙酯/氧获得高的沉积速率。
请参阅图8及图12，图12示意出了本申请一实施例所述的化学气相沉积设备的简化结构示意图。在一个实施例中，化学气相沉积设备还包括旋转机构50。旋转机构50用于驱动承载台40转动。如此，通过旋转机构50驱动承载台40转动，相应带动承载台40上的半导体衬底30进行转动，能提高半导体衬底30上沉积的薄膜均匀性。
在一个实施例中，一种上述任一实施例的化学气相沉积设备的工作方法，包括如下步 骤：通过调整出风面板113板面的中部部位相对于边缘部位远离于第一端的程度，来相应调整在半导体衬底30上沉积的薄膜的均匀性；或者，通过调整出风面板113板面的中部部位与出风面板113的边缘部位之间的高度差，来相应调整在半导体衬底30上沉积的薄膜的均匀性。
上述的化学气相沉积设备的工作方法，相对于传统采用平整的出风面板113而言，能实现半导体衬底30上沉积得到的薄膜的中部部位厚度相对增大，这样在半导体衬底30的表面上进行沉积得到的薄膜的均匀性便得到改善。
以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本申请中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
需要说明的是，当元件被称为“固定于”或“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“上”、“下”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。

Claims (20)

  1. 一种喷淋头，包括：
    壳体，所述壳体包括相对设置的第一端与第二端，所述壳体的第一端设有进气口，所述壳体的第二端设有出风面板，所述出风面板的板面上设有若干个出气孔，所述出风面板板面的中部部位相对于边缘部位更加远离于所述第一端。
  2. 根据权利要求1所述的喷淋头，其中所述出风面板可拆卸地设置于所述壳体的第二端。
  3. 根据权利要求2所述的喷淋头，其中所述出风面板为锥体结构或圆锥台结构。
  4. 根据权利要求1所述的喷淋头，其中还包括驱动组件，所述出风面板为可变形板，所述驱动组件装设于所述壳体上，所述驱动组件用于驱动所述可变形板的中部部位朝向远离于所述第一端的方向移动。
  5. 根据权利要求4所述的喷淋头，其中所述驱动组件包括设置于所述第一端的螺母，及与所述螺母配合的螺杆，所述螺杆的一端位于所述壳体外，所述螺杆的另一端伸入到所述壳体内并与所述出风面板的中部部位相连。
  6. 根据权利要求4所述的喷淋头，其中所述驱动组件包括推拉杆，所述推拉杆贯穿所述壳体伸入到所述壳体内，所述推拉杆的端部与所述出风面板的中部部位相连。
  7. 根据权利要求4所述的喷淋头，其中所述驱动组件包括设置于所述壳体内的伸缩调节杆，所述伸缩调节杆的端部与所述出风面板的中部部位相连。
  8. 根据权利要求1所述的喷淋头，其中还包括设置于所述壳体上的第一推动组件，所述出风面板包括外围面板及位于所述外围面板的中部区域的第一中部面板，所述外围面板固定设于所述壳体的第二端，所述外围面板的中部部位设有第一活动口，所述第一中部面板的板缘绕设有第一挡风套，所述第一挡风套可活动地设置于所述第一活动口中，所述第一推动组件与所述第一中部面板相连，用于推动所述第一中部面板远离或者靠近所述第一端。
  9. 根据权利要求8所述的喷淋头，其中还包括设置于所述壳体上的第二推动组件，所述出风面板还包括第二中部面板，所述第一中部面板的中部部位设有第二活动口，所述第二中部面板的板缘绕设有第二挡风套，所述第二挡风套可活动地设置于所述第二活动口中，所述第二推动组件与所述第二中部面板相连，用于推动所述第二中部面板远离或者靠近所述第一端。
  10. 根据权利要求1所述的喷淋头，其中所述出风面板包括两个转动面板及两个柔性板；所述壳体的第二端设有出气口；两个所述转动面板的一端可转动相连，所述转动面板的另一端与所述壳体的第二端滑动配合，其中一个所述柔性板分别与两个所述转动面板的其中一侧以及所述第二端相连，另一个所述柔性板分别与两个所述转动面板的另一侧以及所述第二端相连；并且两个所述柔性板与两个所述转动面板围住所述出气口，所述转动面板上设有所述出气孔。
  11. 根据权利要求10所述的喷淋头，其中还包括设置于所述壳体上的移动组件，所述移动组件用于驱动调整两个所述转动面板之间形成的角度。
  12. 根据权利要求1所述的喷淋头，还包括设置于所述壳体上的移动组件，所述出风面板包括两个转动面板、两个转动连接板及两个柔性板；所述移动组件用于驱动调整两个所述转动面板之间形成的角度；所述壳体的第二端设有出气口；两个所述转动面板的一端可转动相连，所述转动面板的另一端通过所述转动连接板与所述壳体的第二端可转动相连，其中一个所述柔性板分别与两个所述转动面板的其中一侧、两个所述转动连接板的其中一侧以及所述第二端相连，另一个所述柔性板分别与两个所述转动面板的另一侧、两个所述转动连接板的另一侧以及所述第二端相连；两个所述柔性板、两个所述转动连接板及两个所述转动面板围住所述出气口，所述转动面板与所述转动连接板均设有所述出气孔。
  13. 根据权利要求9所述的喷淋头，还包括设置于所述壳体上的第三推动组件；所述出风面板还包括第三中部面板；所述第二中部面板的中部部位设有第三活动口；所述第三中部面板的板缘绕设有第三挡风套；所述第三挡风套可活动地设置于所述第三活动口中；所述第三推动组件与所述第三中部面板相连，用于推动所述第三中部面板远离或者靠近所述第一端。
  14. 根据权利要求1所述的喷淋头，其中所述壳体连接有进气管，所述进气管的一端与所述进气口相连通，所述进气管的另一端用于接入气体供应设备，所述气体供应设备通过所述进气管将气体输送到所述壳体内。
  15. 根据权利要求1所述的喷淋头，其中所述壳体的主体结构为圆柱体、半球体或者圆柱体与半球体相结合的结构体。
  16. 根据权利要求4所述的喷淋头，其中所述可变形板为弹性面板或柔性材质板。
  17. 一种化学气相沉积设备，其中包括：如权利要求1至16任意一项所述的喷淋头，还包括用于提供真空环境的外壳，以及用于装设半导体衬底的承载台，所述喷淋头与所述承载台均设置于所述外壳内，所述出风面板对着所述承载台。
  18. 根据权利要求11所述的化学气相沉积设备，还包括旋转机构，所述旋转机构用于驱动所述承载台转动。
  19. 需根据权利要求11所述的化学气相沉积设备，其中所述承载台为吸盘，所述吸盘的直径与所述喷淋头的直径实质上相同且可沿轴线垂直地移动。
  20. 一种如权利要求17或18所述的化学气相沉积设备的工作方法，包括如下步骤：
    通过调整出风面板板面的中部部位相对于边缘部位远离于所述第一端的程度，来相应调整在半导体衬底上沉积的薄膜的均匀性；或者
    通过调整出风面板板面的中部部位与出风面板的边缘部位之间的高度差，来相应调整在半导体衬底上沉积的薄膜的均匀性。
PCT/CN2021/101428 2020-08-14 2021-06-22 喷淋头、化学气相沉积设备及其工作方法 Ceased WO2022033181A1 (zh)

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