WO2022028118A1 - 监测晶圆及监测系统 - Google Patents

监测晶圆及监测系统 Download PDF

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Publication number
WO2022028118A1
WO2022028118A1 PCT/CN2021/100165 CN2021100165W WO2022028118A1 WO 2022028118 A1 WO2022028118 A1 WO 2022028118A1 CN 2021100165 W CN2021100165 W CN 2021100165W WO 2022028118 A1 WO2022028118 A1 WO 2022028118A1
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WIPO (PCT)
Prior art keywords
search
wafer
module
monitoring
light
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PCT/CN2021/100165
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English (en)
French (fr)
Inventor
张博维
潘磊
傅荣
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长鑫存储技术有限公司
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Application filed by 长鑫存储技术有限公司 filed Critical 长鑫存储技术有限公司
Priority to US17/474,331 priority Critical patent/US20220044948A1/en
Publication of WO2022028118A1 publication Critical patent/WO2022028118A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Definitions

  • the present disclosure relates to, but is not limited to, a monitoring wafer and monitoring system.
  • a plurality of wafers pass through the same reaction chamber in sequence to perform corresponding process processes.
  • the process of any wafer pollutes the environment in the reaction chamber or affects the performance of the reaction chamber, the process of subsequent wafers or the quality of the fabricated semiconductor structure will be affected.
  • Embodiments of the present disclosure provide a monitoring wafer and a monitoring system, which can accurately acquire the conditions of the wafer chuck and the reaction chamber without opening the reaction chamber or interrupting the process.
  • An embodiment of the present disclosure provides a monitoring wafer, including: an initial wafer, the initial wafer has a front side and a back side, the back side faces a wafer chuck; a wireless transmission module, and a search module and data located on the back side an acquisition module, the search module is configured to send search light to the wafer chuck, the data acquisition module is configured to collect search information of the search light on the wafer chuck, the The wireless transmission module is configured to receive and transmit the search shot information.
  • the search information includes surface image information of the surface of the wafer chuck;
  • the data acquisition module includes a camera unit, and the camera unit is configured to acquire the surface image information.
  • the search light comprises green light. Since the human eye is more sensitive to green light, it is easier for the human eye to identify flaws and spots under green light. It is beneficial to manually detect metal substances.
  • the search light comprises violet light.
  • violet light irradiation Through the contrast effect produced by violet light irradiation, the human eye can more easily observe tiny fluorescent substances, such as fibrous materials that are difficult to remove due to electrostatic adsorption, which is beneficial to improve the efficiency and accuracy of manual detection.
  • the search information further includes aerial image information between the backside and the wafer chuck; the camera unit is further configured to acquire the aerial image information.
  • the spatial image information between the backside and the wafer chuck can be set to characterize the contamination of the reaction chamber, and obtaining the spatial image information is conducive to detecting the impurity particles that are not deposited or adsorbed on the surface of the wafer chuck, so as to accurately obtain the Contamination of the reaction chamber.
  • the search light includes a laser
  • the search module can perform linear scanning in at least three directions
  • the data acquisition module includes: a reflection receiver
  • the reflection receiver is configured to receive The reflected light of the search light and the energy data of the reflected light are obtained.
  • the center of the wafer chuck can be positioned by receiving the laser reflected in different directions by the reflection receiver, and then it can be corrected when the wafer chuck is shifted, so as to avoid the etching defects caused by the deviation of the wafer position and ensure the semiconductor structure. Has good performance.
  • the search module includes a plurality of search units, and the search light emitted by each of the search units is different;
  • the monitoring wafer further includes: a control module, which controls The module is configured to switch the search unit to emit different search lights to the wafer chuck.
  • the search light unit By switching the search light unit, the conditions of the wafer chuck and the reaction chamber under different search light environments can be obtained. Detecting the round chuck is beneficial to detect different types of contamination particles, and thus perform more effective maintenance of the wafer chuck and reaction chamber.
  • control module is further configured to control the wireless transmission module to transmit search information of different search light rays to different target objects.
  • the wireless transmission module is further configured to receive a control command and send the control command to the control module, and the control module is further configured to execute the control command.
  • the content includes switching to the designated search unit.
  • the wireless transmission module and the control module have the function of receiving information, which is beneficial to enable the staff or the data analysis device to control the monitoring wafer, so as to realize more targeted monitoring.
  • the data acquisition module further includes a wind speed detection unit, the wind speed detection unit is configured to detect wind speed data, and the control module is further configured to switch the search unit according to the wind speed data.
  • the wind speed detection unit or the airflow at a designated position in the reaction chamber changes, the conditions of the wafer chuck and the reaction chamber can be monitored, and the reasons for the change of the wind speed can be caused in time, and then maintenance can be carried out in time.
  • An embodiment of the present disclosure further provides a monitoring system, including: the monitoring wafer described in any one of the above; and a data analysis device, wherein the data analysis device is configured to receive probe information transmitted by the monitoring wafer.
  • the search module includes a plurality of search units, and the search light emitted by each of the search units is different;
  • the monitoring wafer further includes a control module, and the control module is configured to Switching the search unit to emit different said search lights to the wafer chuck;
  • the data analysis device is also configured to send a control command for the control module to execute to the monitoring wafer, the control command
  • the content includes switching to the designated search unit.
  • the data collection module further includes a wind speed detection unit, the wind speed detection unit is configured to detect wind speed data, and the wireless transmission module is further configured to receive the wind speed data and transmit the wind speed data to the wind speed data.
  • the data analysis device is further configured to send the control command based on the wind speed data.
  • the monitoring wafer used as wafer control is provided with a data acquisition module on the back of the wafer chuck, and the data collected by the data acquisition module can be transmitted through the wireless transmission module, so as to realize that the reaction chamber is not opened or interrupted.
  • the wafer chuck and the reaction chamber are accurately obtained; in addition, since the data acquisition module is located on the back of the monitoring wafer, and the monitored data is collected by the monitoring wafer newly entering the reaction chamber every time, thus It avoids the influence of the process in the reaction chamber on the acquisition of the monitoring wafer data acquisition module, thereby ensuring the accuracy of the collected data information; in addition, functional modules such as the data acquisition module are located on the back of the monitoring wafer, and the monitoring wafer is monitored during the monitoring process. In addition to the contamination of the wafer chuck and the reaction chamber, it can also be set to monitor the process stability of the reaction chamber.
  • FIG. 1 is a schematic structural diagram of a monitoring wafer according to an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of a probe module for monitoring wafers shown in FIG. 1;
  • 3 to 6 are schematic diagrams of the working principle of the monitoring wafer provided by the embodiments of the present disclosure.
  • FIG. 7 is a block diagram of a monitoring system provided by an embodiment of the present disclosure.
  • the monitoring wafer 1 includes: an initial wafer 10 , the initial wafer 10 has a front side 102 and a back side 101 , and the back side 101 faces the wafer chuck 22 ; a wireless transmission module 13 and a search module located on the back side 101 11 and the data acquisition module 12, the search light module 11 is set to send search light to the wafer chuck 22, the data acquisition module 12 is set to collect search light information on the wafer chuck 22, the wireless transmission module 13 Set to receive and transmit searchlight information.
  • the initial wafer 10 is a monitor wafer, which is set to monitor the stability of the process between batches.
  • the wafer control chip can be placed in the machine or the reaction chamber together with the product wafer for the process process, or it can be used for the process process alone.
  • the initial wafer 10 is located in the reaction chamber to perform the single-wafer reaction as an example for description.
  • the reaction chamber in order to ensure that the environment in the reaction chamber or the performance of the reaction chamber meets the requirements, the reaction chamber is usually opened regularly for manual maintenance, but doing so may introduce other pollution and lower maintenance efficiency.
  • the wafer chuck 22 may be an electrostatic chuck, which fixes the wafer through electrostatic action. It should be noted that when the wafer is fixed by the electrostatic chuck, the electrostatic chuck is easy to absorb organic impurities such as fibers; the wireless transmission module 13 may be located on the back side 101 or on the side or front side 102 of the initial wafer 10 .
  • the search module 11 may include a plurality of search units.
  • the plurality of search units can be respectively the first search unit 111, the second search unit 112 and the third search unit 113, and the search light emitted by each search unit is different;
  • the monitoring wafer 1 further includes: a control module 14.
  • the control module 14 is configured to switch a plurality of search units to emit different search lights to the wafer chuck 22 . In this way, the conditions of the wafer chuck 22 and the reaction chamber under different search light environments can be obtained. Since different substances have different contrasts under different search light environments, different search lights are used for the wafer chucks. 22 is probed, which is beneficial to detect different types of contamination particles, and thus to perform more effective maintenance on the wafer chuck 22 and the reaction chamber.
  • the search light unit may emit search light at the beginning of switching, or may emit search light after the switching is completed, and may also always emit search light.
  • the control module 14 switches the search unit, the designated search unit arrives at the designated position, and the search unit emits search light at the same moment for description.
  • control module 14 when the wireless transmission module 13 receives the search information of different search lights, the control module 14 is further configured to control the wireless transmission module 13 to transmit the search information of different search lights to different target objects.
  • the target object may be a data analysis device for a certain type of search light, and by setting a corresponding data analysis device to analyze the search information of a certain type of search light, it is beneficial to improve the search light of this type of search light.
  • the efficiency of information analysis so as to obtain the situation of the wafer chuck 22 and the reaction chamber more accurately and timely, so as to ensure that the wafer chuck 22 and the reaction chamber are in good condition; in addition, the target objects can also be different workers , different staff have different degrees of cognition of different search information.
  • the search information can be analyzed more accurately; in addition, the target object can also be different functional devices, such as cleaning devices and mobile devices, the cleaning device can determine whether the reaction chamber and the wafer chuck 22 located in the reaction chamber need to be cleaned according to the search information of a certain type of search light, and the mobile device can be cleaned according to the The search information of another type of search light determines whether the position of the wafer chuck 22 needs to be moved and the corresponding moving amount.
  • a plurality of detection units can be fixed on the carrier structure 114 , and the carrier structure 114 can be rotated, so that the surface of the wafer chuck 22 is located in different detection units. within the search range.
  • the search information includes surface image information on the surface of the wafer chuck 22
  • the data acquisition module 12 includes a camera unit 121
  • the camera unit 121 is configured to acquire surface image information.
  • the surface image information may be provided to characterize the surface state of the wafer chuck 22 .
  • the surface image information may include structure and topography and material distribution.
  • the first search unit 111 is a green light source, and the search light emitted by the first search unit 111 is green light. Since the human eye is more sensitive to green light, it is easier for the human eye to identify flaws and spots under green light. It is beneficial to manually detect metal substances.
  • the green light greatly enhances the contrast of the surface image information of the wafer chuck 22; in addition, the metal substance on the surface of the wafer chuck 22 may originate from other product wafers, or may originate from unprocessed wafers in the process. Precursors removed.
  • the second search unit 112 is a purple light source, and the search light emitted by the second search unit 112 is purple light.
  • the human eye can more easily observe tiny fluorescent substances, such as fibrous materials that are difficult to remove due to electrostatic adsorption, which is beneficial to improve the efficiency and accuracy of manual detection.
  • the contrast of the spatial image information between the initial wafer 10 and the wafer chuck 22 is greatly improved by the violet light.
  • the image information of the space between the initial wafer 10 and the wafer chuck 22 can be obtained by using the camera unit 121 .
  • the spatial image information can be set to characterize the contamination of the reaction chamber, and obtaining the spatial image information is helpful for detecting impurity particles that are not deposited or adsorbed on the surface of the wafer chuck 22, so as to accurately obtain the contamination of the reaction chamber.
  • the third search light source 113 is a laser light source, the light emitted by the third search light source 113 is a laser, and the third search light source 113 can perform linear scanning along at least three directions;
  • the data acquisition module 12 further includes: A reflection receiver 122, the reflection receiver 122 is configured to receive the reflected light of the search light and obtain energy data of the reflected light.
  • the laser Since the laser has stronger energy, using the laser for search can ensure that the reflected light of the search light has a higher energy, and is then received and recognized by the reflection receiver 122; At the edge position, due to the change of the dielectric material, the energy reflected by the wafer chuck 22 will change significantly. In this way, the current position of the laser on the wafer chuck 22 can be determined according to the received energy data of the reflected light. Edge point of circular chuck 22 .
  • the center position of the wafer chuck 22 can be calculated. In this way, the center of the wafer chuck 22 can be positioned and then corrected when the wafer chuck 22 is deviated, thereby avoiding etching defects caused by wafer position deviation and ensuring good performance of the semiconductor structure.
  • the change of the medium material causes the change of the reflected energy, including but not limited to the following two situations: there is no other material on the edge of the wafer chuck 22, when the laser is irradiated on the edge of the wafer chuck 22, because part of the light is not absorbed by the wafer
  • the chuck 22 reflects, resulting in less energy of the reflected light received by the reflection receiver 122; in addition, the edge of the wafer chuck 22 is made of other materials with lower or higher reflectivity, when the laser light is irradiated on the wafer chuck 22 At the edge point, the energy of the reflected light received by the reflection receiver 122 will also change correspondingly due to the decrease or increase of the reflectivity of part of the light.
  • the current position of the laser on the surface of the wafer chuck 22 can be determined according to the received energy data of the reflected light as the edge point of the wafer chuck 22.
  • the control module 14 or an external data analysis device can determine according to the third detection The irradiation time of the illumination light source 113, or the time when the third search light source 113 is switched to the time when the reflection receiver 122 receives the reflected light from the edge point, the optical path of the search light is obtained, and the optical path of the search light is obtained according to the optical path and the scanning direction of the laser. Get the position of the edge point.
  • the distance from the third detection unit 113 to the edge point of the wafer chuck 22 is half of the optical path, and the optical path can be obtained by multiplying the round-trip time of the laser by the speed of light.
  • the wireless transmission module 13 is further configured to receive and send the control command to the control module 14, and the control module 14 is further configured to execute the control command, and the content of the control command includes switching to a designated search unit.
  • the wireless transmission module 13 and the control module 14 have a receiving function, which facilitates real-time control of the monitoring wafer 1 by staff or other functional devices, thereby realizing more targeted monitoring.
  • the data acquisition module 12 further includes a wind speed detection unit 123, the wind speed detection unit 123 is configured to detect wind speed data, and the control module 14 is further configured to switch the search unit according to the wind speed data.
  • the control module 14 is also configured to switch the search unit according to the wind speed data, for example: the wireless transmission module 13 sends the wind speed data detected by the wind speed detection unit 123 to an external data analysis device, and the data analysis device analyzes the wind speed data, and according to the analysis As a result, the control command is sent to the wireless transmission module 13, the wireless transmission module 13 sends the control command to the control module 14 for execution, and the control module 14 switches to the designated search unit according to the control command.
  • the change of the wind speed can occur in the following two but not limited to the following two situations: First, an inert airflow with a certain amount of heat is blown to the back surface 101 of the initial wafer 10, thereby heating the wafer 10, at this time , the impurity particles in the reaction chamber may block the blowing port, resulting in faster flow rate of the blowing port or turbulent flow in the reaction chamber; second, in order to avoid damage to the wafer caused by the electrostatic adsorption force of the wafer chuck 22, the blowing The method of gas exerts a force opposite to the electrostatic adsorption force on the back surface 101, so that the wafer has a certain distance from the wafer chuck 22 while being fixed. At this time, the impurity particles in the reaction chamber may also block the blowing. port, resulting in increased flow velocity or turbulent flow.
  • the monitoring wafer 1 further includes a switch 15.
  • the switch 15 is connected to the control module 14.
  • the switch 15 can be turned on before the monitoring wafer 1 enters the reaction chamber, thereby starting the control module 14; Afterwards, the switch 15 is turned off by the control module 14, and the control module 14 itself is also turned off correspondingly when the switch 15 is turned off.
  • the monitoring wafer will be explained below with an exemplary practical application scenario of the monitoring wafer.
  • the semiconductor structure fabricated in the reaction chamber since the semiconductor structure fabricated in the reaction chamber has impurity defects, it is necessary to send monitoring wafers into the reaction chamber to monitor the conditions of the wafer chuck and the reaction chamber, and to determine whether there is any defect on the wafer chuck. Impurity issues.
  • the ejector pin 21 lifts the initial wafer 10 up to a distance from the wafer The chuck 22 is at a distance.
  • the first search unit 111 is used to perform green light search, and the camera unit 121 transmits the search information of the green light search, mainly the surface image information of the wafer chuck 22, through the wireless transmission module 13.
  • the data analysis device sends a control command to the wireless transmission module 13 for the control module 14 to execute, and the content of the control command is to switch the search module 11 to the second probe.
  • the illumination unit 112 is used for violet light search.
  • the instruction of "using the first inspection unit 111 to conduct the first inspection" can be either a built-in initial instruction of the control module 14, or the control of the data analysis device or the staff; in other embodiments, it can also be First, the second search unit is used for the first search.
  • the searchlight module 11 is surrounded by a plane mirror 16 , and the plane mirror 16 is configured to diffuse the light emitted by the searchlight module 11 .
  • the violet light search of the second search unit 112 is performed.
  • the camera unit 121 transmits the violet light search information, mainly the spatial image information between the wafer chuck 22 and the initial wafer 10, to the external cleaning device through the wireless transmission module 13, and the cleaning device has Data parsing function.
  • the cleaning device has Data parsing function.
  • the monitoring wafer Before performing the cleaning process, the monitoring wafer can be controlled to be moved out of the reaction chamber to avoid the impact of the cleaning process on the performance of the monitoring wafer and ensure that the monitoring wafer has high reusability;
  • the cleaning process of the wafer and the reaction chamber is carried out at the same time, which is beneficial to shorten the process time, and there is no need to send the monitoring wafer again to monitor the contamination after cleaning.
  • the removal of wafers is monitored to contaminate other process environments or other components.
  • a process process is performed on the front side of the monitoring wafer to monitor process stability between batches.
  • a monitoring wafer needs to be fed into the reaction chamber to monitor the position of the wafer chuck. Determine if there is an offset problem on the wafer chuck.
  • the shift of the wafer chuck will cause the position of the product wafer to shift, thereby causing etching defects such as uneven etching in the fabricated semiconductor structure.
  • the position of the monitoring wafer itself needs to be accurate, that is, in the direction perpendicular to the surface of the wafer chuck, the orthographic projection of the center of the monitoring wafer should be the same as the wafer before the deviation occurs. The orthographic projections of the centers of the chucks coincide.
  • the wafer chuck can be closed while the monitoring wafer is being fed, so as to avoid the offset of the monitoring wafer caused by the electrostatic adsorption force of the wafer chuck; an additional film can also be coated on the monitoring wafer to avoid The monitoring wafer is deflected by electrostatic attraction force.
  • the third detection unit 113 scans the wafer chuck 22 in at least three directions, so as to obtain the position of the edge point of the wafer chuck 22 .
  • the third probe unit 113 is located at the first center position 102 of the backside of the initial wafer 10 .
  • FIG. 6 shows a scanning path 222 .
  • the scanning path 222 is a dotted line that exits from the first center position 102 and ends at the edge of the wafer chuck 22 .
  • the third search unit 113 performs linear scanning according to the scanning path 222 .
  • the third search unit 113 sends the scan data to the external mobile device through the wireless transmission module 13 (refer to FIG. 1 ) after the scan is completed, and the scan data includes the energy data of the reflected light and the time when the reflected light is received.
  • the control module 14 ( Referring to FIG. 1 ) the scanning path 222 of the reflected light and the time when the third search unit 113 emits the laser light corresponding to the scanning path 222 is sent to the external mobile device.
  • the mobile device has a built-in analysis unit, which analyzes the received data, obtains the duration of the laser irradiating the edge point and the optical path of the laser within the duration, and then obtains the position of each edge point according to the direction of the scanning path.
  • the analyzing unit can analyze and obtain the plane offset of the second center position 221 of the wafer chuck 22 relative to the first center position 102 according to the positions of at least three edge points, and the plane offset is a vector.
  • the moving device corrects the position of the wafer chuck 22 according to the plane offset to ensure that the wafer chuck 22 is in a preset position. In this way, manual calibration is not required, which is beneficial to improve calibration efficiency and calibration accuracy, and avoid manual calibration to introduce new contamination, such as fibers on anti-static gloves.
  • the monitoring wafer serving as wafer control is provided with a data acquisition module on the back of the wafer chuck, and the data collected by the data acquisition module can be transmitted through the wireless transmission module, so as to realize that the reaction chamber is not opened or interrupted without interruption.
  • the data acquisition module is located on the back of the monitoring wafer, the data monitored each time is collected by the monitoring wafer newly entering the reaction chamber so as to avoid the influence of the process in the reaction chamber on the collection of the data acquisition module, thereby ensuring the accuracy of the collected data information;
  • functional modules such as the data acquisition module are located on the back of the monitoring wafer, and the monitoring wafer is on the monitoring wafer.
  • it can also be set to monitor the process stability of the reaction chamber.
  • an embodiment of the present disclosure further provides a monitoring system.
  • the monitoring system includes: any one of the above-mentioned monitoring wafers 1 ;
  • the search module 11 includes a plurality of search units, and each search unit emits different search lights; the monitoring wafer 1 further includes a control module 14, and the control module 14 is configured to switch the search units so as to The wafer chuck 22 emits different search light, and the data analysis device 2 is further configured to send a control command to the monitoring wafer 1 for the control module 14 to execute.
  • the content of the control command includes switching to a designated search unit.
  • the data acquisition module 12 further includes a wind speed detection unit 123, the wind speed detection unit 123 is configured to detect the wind speed data at the location or the specified location, and the wireless transmission module 13 is further configured to receive the wind speed data and transmit the wind speed data to the data analysis In the device 2, the data analysis device 2 is further configured to send a control command based on the wind speed data.
  • the probe information of the wafer chuck 22 can be accurately obtained and analyzed without opening the reaction chamber or interrupting the process, so as to provide the staff Or other devices perform actions related to the parsing results.
  • the monitoring wafer serving as the control wafer is provided with a data acquisition module on the back of the wafer chuck, and the data collected by the data acquisition module can be transmitted through the wireless transmission module, so as to realize the realization of Accurately obtain the wafer chuck and the reaction chamber when the reaction chamber is opened or without interrupting the process; in addition, since the data acquisition module is located on the back of the monitoring wafer, and the monitored data is newly entered into the reaction chamber every time The monitoring wafer acquisition can be avoided, so as to avoid the influence of the process in the reaction chamber on the acquisition of the monitoring wafer data acquisition module, thereby ensuring the accuracy of the collected data information; in addition, functional modules such as the data acquisition module are located in the monitoring wafer. On the back, the monitoring wafer can be set to monitor the process stability of the reaction chamber while monitoring the contamination of the wafer chuck and the reaction chamber.

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Abstract

本公开提供一种监测晶圆及监测系统，监测晶圆包括：初始晶圆、探照模块、数据采集模块和无线传输模块，探照模块设置为向晶圆卡盘发出探照光线，数据采集模块设置为采集所述探照光线在所述晶圆卡盘上的探照信息，无线传输模块设置为接收并传输探照信息。

Description

监测晶圆及监测系统
本公开要求在2020年08月05日提交中国专利局、申请号为202010778734.8、发明名称为“监测晶圆及监测系统”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及但不限于一种监测晶圆及监测系统。
背景技术
在半导体结构的单片式反应制程中，多个晶圆会依次经过同一反应腔室以进行相应的工艺制程。当任一晶圆的工艺制程对反应腔室内的环境造成污染或者影响反应腔室的性能时，后续晶圆的工艺制程或者以及制作得到的半导体结构质量都会受到影响。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本公开实施例提供了一种监测晶圆及监测系统，能够在不打开反应腔室或不中断工艺制程的情况下，准确获取晶圆卡盘和反应腔室的情况。
本公开实施例提供一种监测晶圆，包括：初始晶圆，所述初始晶圆具有正面和背面，所述背面朝向晶圆卡盘；无线传输模块以及位于所述背面的探照模块和数据采集模块，所述探照模块设置为向所述晶圆卡盘发出探照光线，所述数据采集模块设置为采集所述探照光线在所述晶圆卡盘上的探照信息，所述无线传输模块设置为接收并传输所述探照信息。
根据本公开的一些实施例，所述探照信息包括所述晶圆卡盘表面的表面图像信息；所述数据采集模块包括摄像单元，所述摄像单元设置为获取所述表面图像信息。
根据本公开的一些实施例，所述探照光线包括绿光。由于人眼对于绿光较为敏感，在绿光环境下人眼更容易识别出瑕疵和斑点；同时，由于绿光能够提高被检测物表面不同材料的对比度，尤其是金属物质与其他材料的对比度，有利于人工检测出金属物质。
根据本公开的一些实施例，所述探照光线包括紫光。通过紫光照射所产生的反差效果，人眼能够更容易地观察到微小的带有荧光的物质，例如因静电吸附作用而难以清除的纤维材料，有利于提升人工检测效率和检测准确度。
根据本公开的一些实施例，所述探照信息还包括所述背面和所述晶圆卡盘之间的空间图像信息；所述摄像单元还设置为获取所述空间图像信息。背面和晶圆卡盘之间的空间图像信息可设置为表征反应腔室的污染情况，获取空间图像信息，有利于检测出未沉积或未吸附在晶圆卡盘表面而杂质颗粒，从而准确获取反应腔室的污染情况。
根据本公开的一些实施例，所述探照光线包括激光，所述探照模块可沿至少三个方向进行线性扫描；所述数据采集模块包括：反射接收器，所述反射接收器设置为接收所述探照光线的反射光线并获取所述反射光线的能量数据。通过反射接收器接收不同方向反射的激光，能够对晶圆卡盘的中心进行定位，进而在晶圆卡盘发生偏移时进行纠正，从而避免晶圆位置偏差造成的刻蚀缺陷，保证半导体结构具有良好性能。
根据本公开的一些实施例，所述探照模块包括多个探照单元，每一所述探照单元发出的所述探照光线不同；所述监测晶圆还包括：控制模块，所述控制模块设置为切换所述探照单元，以向所述晶圆卡盘发出不同所述探照光线。通过切换探照单元，可获取不同探照光线环境下的晶圆卡盘和反应腔室的情况，由于不同的物质在不同探照光线环境下具有不同的对比度，采用不同的探照光线对晶圆卡盘进行探照，有利于检测出不同类型的污染颗粒，进而对晶圆卡盘和反应腔室进行更为有效的维护保养。
根据本公开的一些实施例，所述控制模块还设置为控制所述无线传输模块将不同所述探照光线的探照信息传输至不同的目标对象。
根据本公开的一些实施例，所述无线传输模块还设置为接收控制命令并将所述控制命令发送至所述控制模块，所述控制模块还设置为执行所述控制命令， 所述控制命令的内容包括切换至指定的所述探照单元。无线传输模块和控制模块具有信息接收功能，有利于使得工作人员或数据分析装置能够对监测晶圆进行控制，从而实现更具有针对性的监测。
根据本公开的一些实施例，所述数据采集模块还包括风速检测单元，所述风速检测单元设置为检测风速数据，所述控制模块还设置为根据所述风速数据切换所述探照单元。如此，能够在风速检测单元所在位置或者反应腔室内指定位置的气流发生变化时，对晶圆卡盘和反应腔室的情况进行监测，及时导致风速变化的原因，进而及时地进行维护保养。
本公开实施例还提供一种监测系统，包括：上述任一项所述的监测晶圆；数据分析装置，所述数据分析装置设置为接收所述监测晶圆传输的探照信息。
根据本公开的一些实施例，探照模块包括多个探照单元，每一所述探照单元发出的所述探照光线不同；所述监测晶圆还包括控制模块，所述控制模块设置为切换所述探照单元，以向晶圆卡盘发出不同所述探照光线；所述数据分析装置还设置为向所述监测晶圆发送供所述控制模块执行的控制命令，所述控制命令的内容包括切换至指定的所述探照单元。
根据本公开的一些实施例，数据采集模块还包括风速检测单元，所述风速检测单元设置为检测风速数据，所述无线传输模块还设置为接收所述风速数据并将所述风速数据传输至所述数据分析装置；所述数据分析装置还设置为基于所述风速数据发送所述控制命令。
本公开实施例提供的技术方案具有以下优点：
上述技术方案中，作为控片的监测晶圆朝向晶圆卡盘的背面具有数据采集模块，数据采集模块采集得到的数据能够通过无线传输模块传出，从而实现在不打开反应腔室或不中断制程的情况下准确获取晶圆卡盘和反应腔室的情况；此外，由于数据采集模块位于监测晶圆背面，并且监测到的数据每次都由新进入反应腔室的监测晶圆采集，从而避免了反应腔室内工艺制程对监测晶圆数据采集模块的采集造成的影响，进而保证采集到的数据信息的准确性；此外，数据采集模块等功能模块位于监测晶圆背面，监测晶圆在监测晶圆卡盘和反应腔室的污染情况的同时，还可以设置为监测反应腔室的工艺制程稳定性。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
并入到说明书中并且构成说明书的一部分的附图示出了本公开的实施例，并且与描述一起设置为解释本公开实施例的原理。在这些附图中，类似的附图标记设置为表示类似的要素。下面描述中的附图是本公开的一些实施例，而不是全部实施例。对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，可以根据这些附图获得其他的附图。
图1为本公开实施例提供的一种监测晶圆的结构示意图；
图2为图1所示监测晶圆的探照模块的结构示意图；
图3至图6为本公开实施例提供的监测晶圆工作原理示意图。
图7为本公开实施例提供的监测系统的框图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合附图对本公开的各实施例进行详细的阐述。然而，本领域的普通技术人员可以理解，在本公开各实施例中，为了使读者更好地理解本申请而提出了许多技术细节。但是，即使没有这些技术细节和基于以下各实施例的种种变化和修改，也可以实现本申请所要求保护的技术方案。
参考图1和图3，监测晶圆1包括：初始晶圆10，初始晶圆10具有正面102和背面101，背面101朝向晶圆卡盘22；无线传输模块13以及位于背面101的探照模块11和数据采集模块12，探照模块11设置为向晶圆卡盘22发出探照光线，数据采集模块12设置为采集探照光线在晶圆卡盘22上的探照信息，无线传输模块13设置为接收并传输探照信息。
初始晶圆10为晶圆控片(Monitor Wafer)，设置为监控批次间工艺制程的稳定性。晶圆控片既可以与产品晶圆一起置于机台或反应腔室内进行工艺制程，也可以单独进行工艺制程。
本实施例中以初始晶圆10位于反应腔室内进行单片式反应为例进行说明。
其中，为保证反应腔室内的环境或者反应腔室的性能满足要求，通常会定期打开反应腔室以进行人工维护保养，但这样做可能会引入其他污染，以及维护保养的效率较低。
本实施例中，晶圆卡盘22可以是静电卡盘，通过静电作用固定晶圆，需要说明的是，采用静电卡盘固定晶圆时，静电卡盘容易吸附纤维等有机物杂质；无线传输模块13可以位于背面101，也可以位于初始晶圆10的侧面或正面102。
本实施例中，探照模块11可包括多个探照单元。多个探照单元可分别为第一探照单元111、第二探照单元112以及第三探照单元113，每一探照单元发出的探照光线不同；监测晶圆1还包括：控制模块14，控制模块14设置为切换多个探照单元，以向晶圆卡盘22发出不同探照光线。如此，可获取不同探照光线环境下的晶圆卡盘22和反应腔室的情况，由于不同的物质在不同探照光线环境下具有不同的对比度，采用不同的探照光线对晶圆卡盘22进行探照，有利于检测出不同类型的污染颗粒，进而对晶圆卡盘22和反应腔室进行更为有效的维护保养。
其中，探照单元可以在刚开始切换时发出探照光线，也可以在切换完成之后发出探照光线，还可以始终发出探照光线。本文以控制模块14切换探照单元、指定的探照单元到达指定的位置以及探照单元发出探照光线为同一时刻进行说明。
本实施例中，当无线传输模块13接收到不同探照光线的探照信息时，控制模块14还设置为控制无线传输模块13将不同的探照光线的探照信息传输至不同的目标对象。
其中，目标对象可以是针对某一类探照光线的数据分析装置，通过设置对应的数据分析装置对某一类探照光线的探照信息进行解析，有利于提高该类探照光线的探照信息的解析效率，进而更为准确和及时地获取晶圆卡盘22和反应腔室的情况，保证晶圆卡盘22以及反应腔室处于良好状态；此外，目标对象还可以是不同的工作人员，不同的工作人员对不同的探照信息的认知程度不同，通过不同的工作人员去识别其更熟悉的探照信息，能够更为准确地解析探照信息；此外，目标对象还可以是不同的功能装置，例如清洗装置和移动装置，清洗装置可以根据某一类探照光线的探照信息判定是否需要对反应腔室和位于反 应腔室内的晶圆卡盘22进行清洗，移动装置可以根据另一类探照光线的探照信息判定是否需要移动晶圆卡盘22的位置以及相应的移动量。
本实施例中，参考图1、图2和图3，多个探照单元可固定在承载结构114上，承载结构114可旋转，从而使得晶圆卡盘22表面处于在不同的探照单元的探照范围内。
本实施例中，探照信息包括晶圆卡盘22表面的表面图像信息，数据采集模块12包括摄像单元121，摄像单元121设置为获取表面图像信息。表面图像信息可设置为表征晶圆卡盘22的表面状态。表面图像信息可包括结构形貌情况和材料分布情况等。
本实施例中，第一探照单元111为绿光光源，第一探照单元111发出的探照光线为绿光。由于人眼对于绿光较为敏感，在绿光环境下人眼更容易识别出瑕疵和斑点；同时，由于绿光能够提高被检测物表面不同材料的对比度，尤其是金属物质与其他材料的对比度，有利于人工检测出金属物质。
需要说明的是，绿光对于晶圆卡盘22的表面图像信息对比度提升较大；此外，晶圆卡盘22表面的金属物质可能来源于其他产品晶圆，也可能来源于工艺制程中未被清除掉的前驱体。
本实施例中，第二探照单元112为紫光光源，第二探照单元112发出的探照光线为紫光。通过紫光照射所产生的反差效果，人眼能够更容易地观察到微小的带有荧光的物质，例如因静电吸附作用而难以清除的纤维材料，有利于提升人工检测效率和检测准确度。
需要说明的是，紫光对于初始晶圆10和晶圆卡盘22之间空间图像信息对比度提升较大。在进行紫光探照时，可利用摄像单元121获取初始晶圆10和晶圆卡盘22之间的空间图像信息。空间图像信息可设置为表征反应腔室的污染情况，获取空间图像信息，有利于检测出未沉积或未吸附在晶圆卡盘22表面而杂质颗粒，从而准确获取反应腔室的污染情况。
本实施例中，第三探照光源113为激光光源，第三探照光源113发射的光线为激光，第三探照光源113可沿至少三个方向进行线性扫描；数据采集模块12还包括：反射接收器122，反射接收器122设置为接收探照光线的反射光线 并获取反射光线的能量数据。
由于激光拥有更强的能量，采用激光进行探照，能够保证探照光线的反射光线具有较高的能量，进而被反射接收器122接收并识别；此外，当激光扫描至晶圆卡盘22的边缘位置时，由于介质材料的改变，晶圆卡盘22反射的能量会发生较为明显的变化，如此，可根据接收的反射光线的能量数据确定当前激光在晶圆卡盘22上的位置为晶圆卡盘22的边缘点。
通过获取三个边缘点，就可以计算得到晶圆卡盘22的中心位置。如此，能够对晶圆卡盘22的中心进行定位，进而在晶圆卡盘22发生偏移时进行纠正，从而避免晶圆位置偏差造成的刻蚀缺陷，保证半导体结构具有良好性能。
其中，介质材料的改变导致反射能量发生变化包括但不限于以下两种情况：晶圆卡盘22的边缘没有其他材料，当激光照射在晶圆卡盘22边缘时，由于部分光线没有被晶圆卡盘22反射，导致反射接收器122接收到的反射光线的能量较少；此外，晶圆卡盘22的边缘为反射率较低或较高的其他材料，当激光照射在晶圆卡盘22边缘点时，由于部分光线的反射率降低或升高，反射接收器122接收到的反射光线的能量也会相应发生改变。
此外，可根据接收的反射光线的能量数据确定当前激光在晶圆卡盘22所在表面的位置为晶圆卡盘22的边缘点，例如：控制模块14或外部的数据分析装置可根据第三探照光源113的照射时刻，或者是切换到第三探照光源113的时刻到反射接收器122接收到边缘点的反射光线的时刻得到探照光线的光程，并根据光程以及激光的扫描方向获取边缘点的位置。本实施例中，可认为第三探照单元113到晶圆卡盘22边缘点的距离为光程的一半，光程可由激光的往返时间乘以光速得到。
本实施例中，无线传输模块13还设置为接收控制命令并将控制命令发送至控制模块14，控制模块14还设置为执行控制命令，控制命令的内容包括切换至指定的探照单元。无线传输模块13和控制模块14具有接收功能，有利于工作人员或其他功能装置对监测晶圆1进行实时控制，从而实现更具有针对性的监测。
本实施例中，数据采集模块12还包括风速检测单元123，风速检测单元123设置为检测风速数据，控制模块14还设置为根据风速数据切换探照单元。
其中，控制模块14还设置为根据风速数据切换探照单元，例如：无线传输模块13将风速检测单元123检测得到的风速数据发送给外部的数据分析装置，数据分析装置解析风速数据，并根据解析结果发送控制命令给无线传输模块13，无线传输模块13将控制命令发送给控制模块14执行，控制模块14根据控制命令切换至指定的探照单元。
本实施例中，风速的变化可在以下两种但不限于以下两种情况中出现：第一，向初始晶圆10的背面101吹送具有一定热量的惰性气流，从而加热晶圆10，此时，反应腔室内的杂质颗粒可能会堵塞吹送口，进而造成吹送口流速加快或者反应腔室内出现紊流；第二，为避免晶圆卡盘22的静电吸附力对晶圆造成损伤，可采用吹送气体的方式对背面101施加与静电吸附力相反的作用力，使得晶圆在被固定的同时与晶圆卡盘22之间具有一定的距离，此时，反应腔室内的杂质颗粒也可能堵塞吹送口，进而造成流速加快或者紊流。
本实施例中，监测晶圆1还包括开关15，开关15与控制模块14连接，开关15可以在监测晶圆1进入反应腔室之前打开，从而启动控制模块14；也可以在离开反应腔室之后，通过控制模块14关闭开关15，在关闭开关15的同时，控制模块14自身也会相应关闭。
以下将通过监测晶圆的示例性实际应用场景对监测晶圆进行说明。
在一个应用场景下，由于反应腔室内制作得到的半导体结构存在杂质缺陷，需要向反应腔室内送入监测晶圆以监测晶圆卡盘和反应腔室的情况，判断晶圆卡盘上是否存在杂质问题。
参考图1和图3，当监测晶圆1被前开式晶圆传送盒FOUP(Front Opening Unified Pod)传送到晶圆卡盘22上时，顶针21将初始晶圆10顶起，距离晶圆卡盘22一段距离。
本实施例中，先采用第一探照单元111进行绿光探照，摄像单元121将绿光探照的探照信息，主要是晶圆卡盘22的表面图像信息，通过无线传输模块13传给外部专门针对绿光的数据分析装置。在分析得到晶圆卡盘22表面不存在杂质问题的情况下，数据分析装置向无线传输模块13发送供控制模块14执行的控制命令，控制命令的内容为将探照模块11切换为第二探照单元112，进行紫光探照。
其中，“采用第一探照单元111进行初次探照”这一指令既可以是控制模块14的内置初始指令，也可以是数据分析装置或者工作人员的控制；在其他实施例中，还可以是先采用第二探照单元进行初次探照。
本实施例中，探照模块11外部包绕有平面镜16，平面镜16设置为扩散探照模块11发射的光。
参考图4，在进行绿光探照之后进行第二探照单元112的紫光探照。
在进行紫光探照时，摄像单元121将紫光的探照信息，主要是晶圆卡盘22与初始晶圆10之间的空间图像信息，通过无线传输模块13传给外部清洗装置，清洗装置具有数据解析功能。在分析得到反应腔室内存在杂质问题的情况下，对反应腔室进行清洗工艺，以去除杂质。
在进行清洗工艺之前，可以先控制监测晶圆移出反应腔室，避免清洗工艺对监测晶圆的性能造成影响，保证监测晶圆具有较高的可重复利用性；在其他实施例中，对监测晶圆和反应腔室同时进行清洗工艺，如此，有利于缩短工艺时间，无需再次送入监测晶圆以监测清洗后的污染情况，此外，还有利于避免杂质颗粒吸附在监测晶圆表面并随着监测晶圆的移出污染其他工艺环境或其他部件。
在其他实施例中，在没有解析出杂质问题时，对监测晶圆的正面进行制程工艺，以监测批次间的工艺制程稳定性。
在另一个应用场景下，由于制作得到的半导体结构存在刻蚀不均匀或刻蚀位置发生偏移等刻蚀缺陷，需要向反应腔室内送入监测晶圆以监测晶圆卡盘的位置情况，判断晶圆卡盘上是否存在偏移问题。
需要说明的是，晶圆卡盘的偏移会导致产品晶圆的位置发生偏移，进而造成制作得到的半导体结构存在刻蚀不均匀等刻蚀缺陷。而为保证监测晶圆能够有效监测，监测晶圆本身的位置需要保证准确，即在垂直于晶圆卡盘表面的方向上，监测晶圆的中心的正投影应当与发生偏移前的晶圆卡盘的中心的正投影重合。
本实施例可在送入监测晶圆的同时关闭晶圆卡盘，避免晶圆卡盘的静电吸附力对监测晶圆造成偏移；也可以为监测晶圆镀上额外的膜层，以避免监测晶 圆受到静电吸附力而发生偏移。
参考图5和图6，第三探照单元113对晶圆卡盘22进行至少三个方向的扫描，从而获取晶圆卡盘22边缘点的位置。
本实施例中，第三探照单元113位于初始晶圆10的背面的第一中心位置102。图6中图示有扫描路径222，扫描路径222为自第一中心位置102出射的在晶圆卡盘22边缘处截止的虚线，第三探照单元113根据扫描路径222进行线性扫描。
第三探照单元113在扫描完成之后通过无线传输模块13(参考图1)将扫描数据发送给外部的移动装置，扫描数据包括反射光线的能量数据以及接收到反射光线的时间，控制模块14(参考图1)将反射光线的扫描路径222以及第三探照单元113发射对应扫描路径222的激光的时间发送给外部的移动装置。
移动装置内内置有解析单元，解析单元对接收到的数据进行解析，获取激光照射到边缘点的时长以及激光在该时长内的光程，进而根据扫描路径的方向获取每一边缘点的位置。解析单元可根据至少三个边缘点的位置解析得到晶圆卡盘22的第二中心位置221相对于第一中心位置102的平面偏移量，平面偏移量为矢量。
移动装置根据平面偏移量对晶圆卡盘22的位置进行纠正，以保证晶圆卡盘22处于预设位置。如此，无需进行手动校准，有利于提高校准效率以及提高校准准确度，避免手动校准引入新的污染，例如防静电手套上的纤维。
本实施例中，作为控片的监测晶圆朝向晶圆卡盘的背面具有数据采集模块，数据采集模块采集得到的数据能够通过无线传输模块传出，从而实现在不打开反应腔室或不中断制程的情况下准确获取晶圆卡盘和反应腔室的情况；此外，由于数据采集模块位于监测晶圆背面，因此每次监测到的数据都是由新进入反应腔室的监测晶圆采集到的，从而避免反应腔室内的工艺制程对数据采集模块的采集造成影响，进而保证采集到的数据信息的准确性；此外，数据采集模块等功能模块位于监测晶圆背面，监测晶圆在监测晶圆卡盘和反应腔室的污染情况的同时，还可以设置为监测反应腔室的工艺制程稳定性。
相应地，本公开实施例还提供一种监测系统。参考图1、图2、图3和图7， 监测系统包括：上述任一种监测晶圆1；数据分析装置2，数据分析装置2设置为接收监测晶圆1传输的探照信息。
本实施例中，探照模块11包括多个探照单元，每一探照单元发出的探照光线不同；监测晶圆1还包括控制模块14，控制模块14设置为切换探照单元，以向晶圆卡盘22发出不同探照光线，数据分析装置2还设置为向监测晶圆1发送供控制模块14执行的控制命令，控制命令的内容包括切换至指定的探照单元。
本实施例中，数据采集模块12还包括风速检测单元123，风速检测单元123设置为检测所在位置或者指定位置的风速数据，无线传输模块13还设置为接收风速数据并将风速数据传输至数据分析装置2，数据分析装置2还设置为基于风速数据发送控制命令。
本实施例中，通过设置数据分析装置2和监测晶圆1，可在不打开反应腔室或不中断制程的情况下准确获取晶圆卡盘22的探照信息并进行解析，以供工作人员或者其他设备进行与解析结果相关的动作。
本领域技术人员在考虑说明书及实践的公开后，将容易想到本公开的其它实施方案。本公开旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由下面的权利要求指出。
应当理解的是，本公开并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本公开的范围仅由所附的权利要求来限制。
工业实用性
本公开所提供的监测晶圆及监测方法，作为控片的监测晶圆朝向晶圆卡盘的背面具有数据采集模块，数据采集模块采集得到的数据能够通过无线传输模块传出，从而实现在不打开反应腔室或不中断制程的情况下准确获取晶圆卡盘和反应腔室的情况；此外，由于数据采集模块位于监测晶圆背面，并且监测到的数据每次都由新进入反应腔室的监测晶圆采集，从而避免了反应腔室内工艺制程对监测晶圆数据采集模块的采集造成的影响，进而保证采集到的数据信息 的准确性；此外，数据采集模块等功能模块位于监测晶圆背面，监测晶圆在监测晶圆卡盘和反应腔室的污染情况的同时，还可以设置为监测反应腔室的工艺制程稳定性。

Claims (13)

  1. 一种监测晶圆，其中，包括：
    初始晶圆，所述初始晶圆具有正面和背面，所述背面朝向晶圆卡盘；
    无线传输模块以及位于所述背面的探照模块和数据采集模块，所述探照模块设置为向所述晶圆卡盘发出探照光线，所述数据采集模块设置为采集所述探照光线在所述晶圆卡盘上的探照信息，所述无线传输模块设置为接收并传输所述探照信息。
  2. 根据权利要求1所述的监测晶圆，其中，所述探照信息包括所述晶圆卡盘表面的表面图像信息；所述数据采集模块包括摄像单元，所述摄像单元设置为获取所述表面图像信息。
  3. 根据权利要求2所述的监测晶圆，其中，所述探照光线包括绿光。
  4. 根据权利要求2所述的监测晶圆，其中，所述探照光线包括紫光。
  5. 根据权利要求4所述的监测晶圆，其中，所述探照信息还包括所述背面和所述晶圆卡盘之间的空间图像信息；所述摄像模块还设置为获取所述空间图像信息。
  6. 根据权利要求1所述的监测晶圆，其中，所述探照光线包括激光，所述探照模块可沿至少三个方向进行线性扫描；所述数据采集模块包括：反射接收器，所述反射接收器设置为接收所述探照光线的反射光线并获取所述反射光线的能量数据。
  7. 根据权利要求1所述的监测晶圆，其中，所述探照模块包括多个探照单元，每一所述探照单元发出的所述探照光线不同；所述监测晶圆还包括：控制模块，所述控制模块设置为切换所述探照单元，以向所述晶圆卡盘发出不同所述探照光线。
  8. 根据权利要求7所述的监测晶圆，其中，所述控制模块还设置为控制所述无线传输模块将不同所述探照光线的探照信息传输至不同的目标对象。
  9. 根据权利要求7所述的监测晶圆，其中，所述无线传输模块还设置为接 收控制命令并将所述控制命令发送至所述控制模块，所述控制模块还设置为执行所述控制命令，所述控制命令的内容包括切换至指定的所述探照单元。
  10. 根据权利要求7所述的监测晶圆，其中，所述数据采集模块还包括风速检测单元，所述风速检测单元设置为检测风速数据，所述控制模块还设置为根据所述风速数据切换所述探照单元。
  11. 一种监测系统，其中，包括：
    至少一片如权利要求1所述的监测晶圆；
    数据分析装置，所述数据分析装置设置为接收所述监测晶圆传输的探照信息。
  12. 根据权利要求11所述的监测系统，其中，探照模块包括多个探照单元，每一所述探照单元发出的所述探照光线不同；所述监测晶圆还包括控制模块，所述控制模块设置为切换所述探照单元，以向晶圆卡盘发出不同所述探照光线；所述数据分析装置还设置为向所述监测晶圆发送供所述控制模块执行的控制命令，所述控制命令的内容包括切换至指定的所述探照单元。
  13. 根据权利要求12所述的监测系统，其中，数据采集模块还包括风速检测单元，所述风速检测单元设置为检测风速数据，所述无线传输模块还设置为接收所述风速数据并将所述风速数据传输至所述数据分析装置；所述数据分析装置还设置为基于所述风速数据发送所述控制命令。
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