WO2022021418A1 - Capteur d'image et son procédé de fabrication, et dispositif d'imagerie le comprenant - Google Patents

Capteur d'image et son procédé de fabrication, et dispositif d'imagerie le comprenant Download PDF

Info

Publication number
WO2022021418A1
WO2022021418A1 PCT/CN2020/106396 CN2020106396W WO2022021418A1 WO 2022021418 A1 WO2022021418 A1 WO 2022021418A1 CN 2020106396 W CN2020106396 W CN 2020106396W WO 2022021418 A1 WO2022021418 A1 WO 2022021418A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
dielectric
image sensor
capacitor
strip
Prior art date
Application number
PCT/CN2020/106396
Other languages
English (en)
Chinese (zh)
Inventor
周雪梅
徐泽
肖�琳
Original Assignee
深圳市大疆创新科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市大疆创新科技有限公司 filed Critical 深圳市大疆创新科技有限公司
Priority to CN202080016808.2A priority Critical patent/CN113491011A/zh
Priority to PCT/CN2020/106396 priority patent/WO2022021418A1/fr
Publication of WO2022021418A1 publication Critical patent/WO2022021418A1/fr

Links

Images

Classifications

    • H01L27/14636—
    • H01L27/14625—
    • H01L27/14629—
    • H01L27/14632—
    • H01L27/14685—
    • H01L27/14687—

Definitions

  • the present application relates to the technical field of image sensors, and in particular, to an image sensor, a manufacturing method thereof, and an imaging device equipped with an image sensor.
  • CMOS image sensors Since the rise of backside illuminated (BSI) CMOS image sensors, the development of CMOS image sensors to small size and diversification has been greatly promoted.
  • the back-illuminated technology transfers the photosensitive area from the front to the back of the image sensor, so the metal traces no longer need to avoid the photosensitive area, which improves the flexibility of pixel design and makes the image sensor become smaller and smaller. It is possible to improve the pixel filling factor and reduce the number of metal layers.
  • the silicon substrate needs to thin the back to a certain thickness, which greatly shortens the optical path of the incident light in the silicon substrate , which affects the light absorption and conversion efficiency of the photosensitive region, that is, the quantum efficiency.
  • the present application provides an image sensor, a manufacturing method thereof, and an imaging device equipped with the image sensor.
  • the present application provides an image sensor, the image sensor comprising:
  • the pixel array including photosensitive elements capable of receiving light and generating photogenerated carriers
  • the metal interconnection region disposed on one side of the semiconductor substrate, the metal interconnection region comprising a dielectric and a plurality of metal interconnection layers disposed in parallel in the dielectric, the metal interconnection layers connected to the photosensitive element ;
  • optical assembly disposed on the other side of the semiconductor substrate, the optical assembly capable of directing light to the photosensitive element
  • a metal-dielectric-metal capacitor is formed in the metal interconnection region to reflect light toward the photosensitive element.
  • the present application provides an imaging device equipped with any of the above-mentioned image sensors.
  • the present application provides a method for fabricating an image sensor, the method comprising:
  • the pixel array including photosensitive elements
  • a metal interconnection region is formed on one side of the semiconductor substrate, and a metal-dielectric-metal capacitor is formed in the metal interconnection region, and the metal interconnection region includes a dielectric and a plurality of parallel arranged in the dielectric. a metal interconnect layer connected to the photosensitive element;
  • a thinning process and optical components are formed on the other side of the semiconductor substrate.
  • Embodiments of the present application provide an image sensor and a manufacturing method thereof, and an imaging device equipped with the image sensor, which can improve the imaging effect.
  • FIG. 1 is a schematic structural diagram of an image sensor provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of the functional composition of an image sensor in an embodiment
  • FIG. 3 is a schematic diagram of a pixel in an image sensor in an embodiment
  • FIG. 4 is a timing diagram of pixel imaging in an image sensor in one embodiment
  • FIG. 5 is a schematic diagram of a pixel in an image sensor in another embodiment
  • FIG. 6 is a schematic structural diagram of the image sensor in FIG. 1 at another angle
  • FIG. 7 is a schematic structural diagram of an image sensor at an angle in an embodiment
  • FIG. 8 is a schematic structural diagram of the image sensor in FIG. 7 at another angle
  • FIG. 9 is a schematic structural diagram of a metal-dielectric-metal capacitor in one embodiment
  • FIG. 10 is a schematic structural diagram of a metal-dielectric-metal capacitor in another embodiment
  • FIG. 11 is a schematic structural diagram of a metal-dielectric-metal capacitor in yet another embodiment
  • FIG. 12 is a schematic structural diagram of a metal-dielectric-metal capacitor in yet another embodiment
  • FIG. 13 is a schematic flowchart of a manufacturing method of an image sensor provided by an embodiment of the present application.
  • FIG. 14 is a schematic structural diagram of an imaging device according to an embodiment of the present application.
  • an imaging device 601, an image sensor; 602, a processor; 603, a display screen.
  • FIG. 1 is a schematic structural diagram of an image sensor 100 .
  • the image sensor 100 includes a semiconductor substrate 110, a pixel array 120, a metal interconnect region 130, and an optical assembly 150.
  • the image sensor 200 can be divided into a photosensitive circuit area 210 and a peripheral circuit 220 according to functional composition, wherein the photosensitive circuit area 210 may include tens of thousands to hundreds of millions of photosensitive units 211 , such as photosensitive circuits
  • the area 210 may be formed by a large number of photosensitive units 211 arranged in an array in a certain manner.
  • the peripheral circuit 220 is responsible for converting the signal induced by the photosensitive unit 211 into a digital signal and reading it out.
  • the photosensitive unit 211 of the image sensor 200 may also be referred to as a pixel.
  • the photosensitive unit 211 includes a photosensitive element 201 , a transfer transistor (TX) 202 , a floating diffusion (FD) 203 , a reset transistor (RST) 204 , and a source follower transistor (SF) 205 , Row strobe (SEL) 206 .
  • the photosensitive element 201 may also be called a photodiode, and the pixel array 120 may be formed by forming an array of a large number of photosensitive elements 201 in a certain manner.
  • FIG. 4 a typical working sequence of the photosensitive unit 211 is shown in FIG. 4 .
  • the typical working process of the photosensitive unit 211 is as follows:
  • Reset stage the reset tube 204 is turned on (ie, turned on), the row gate tube 206 is turned off (ie, turned off), the transfer tube 202 is turned on (ie, turned on) first, and the photo-generated current in the photosensitive element 201 is emptied then the transfer tube 202 is closed (ie, disconnected);
  • Exposure stage the transmission tube 202 is maintained in a closed state (ie, an open state), and the photosensitive element 201 generates photo-generated carriers under illumination;
  • the row strobe tube 206 is turned on, then the reset tube 204 is turned off, the floating diffusion region 203 is floated to a high potential, and the reference voltage Vref is read at the output end (PXD end) after stabilization (SHR stage)
  • the reference voltage Vref ie, the reference signal
  • the reference voltage Vref can be read by setting the read reference voltage enable signal of the peripheral circuit 220 to a high level; then the transfer tube 202 is turned on, and the photo-generated carriers in the photosensitive element 201 sink into the floating diffusion region 203, the potential of the floating diffusion region 203 decreases as the photogenerated carriers enter.
  • the transfer tube 202 is turned off, and the sample and hold signal voltage Vsig (SHS) is read at the output end after stabilization. stage), for example, the sample-and-hold signal voltage Vsig can be read by setting the read sample-and-hold signal voltage enable signal of the peripheral circuit 220 to a high level.
  • the voltage output signal includes a sample and hold signal and a reference signal.
  • the sample-and-hold signal is generated by photo-generated carriers.
  • the image sensor 200 may include the peripheral circuit 220 , or may not include the peripheral circuit 220 , for example, functions such as analog-to-digital conversion may be implemented by an additional peripheral circuit.
  • the image sensor 100 includes a semiconductor substrate 110 , a pixel array 120 , a metal interconnection region 130 , and an optical component 150 .
  • the semiconductor substrate 110 may include at least one of a silicon substrate, a germanium substrate, and a silicon carbide substrate.
  • the pixel array 120 is formed within the semiconductor substrate 110 .
  • the pixel array 120 includes photosensitive elements 121 capable of receiving light and generating photogenerated carriers.
  • adjacent photosensitive elements 121 may be isolated by shallow trench isolation regions 1201 (shallow trench isolation, STI).
  • the metal interconnection region 130 includes a dielectric 131 and a plurality of metal interconnection layers 132 arranged in parallel in the dielectric 131 .
  • the medium 131 may include silicon dioxide, silicon nitride, etc. formed by chemical vapor deposition (Chemical Vapor Deposition, CVD).
  • the metal interconnect layer 132 may be formed by physical vapor deposition (Physical Vapor Deposition, PVD) to form a metal layer, such as a copper alloy layer, an aluminum layer, etc., and then the metal layer is exposed and formed by etching.
  • PVD Physical Vapor Deposition
  • the metal interconnection layer 132 may be connected to the photosensitive element 121 through metallized vias or tungsten plug-filled contact holes.
  • the metal interconnection layer 132 includes metal lines 1301 connected to the photosensitive elements 121 , for example, the metal lines 1301 are connected to the photosensitive elements 121 by filling contact holes with tungsten plugs.
  • the image sensor 100 further includes a floating diffusion region 142 formed in the semiconductor substrate 110 , and a transfer tube 141 connecting the photosensitive element 121 and the floating diffusion region 142 .
  • the metal interconnect layer 132 is connected to the photosensitive element 121 through the floating diffusion region 142 and the transfer tube 141 .
  • the floating diffusion region 142 is located on the semiconductor substrate 110 , and the floating diffusion region 142 is used for receiving photo-generated carriers;
  • the transfer tube 141 is controlled to communicate with the photosensitive element 121 and the floating diffusion region 142 .
  • the control signal line of the transmission tube 141 receives a high level to make the transmission tube 141 conduct, so that the photosensitive element 121 and the floating diffusion region 142 are communicated.
  • the metal interconnection layer 132 is also used to connect the floating diffusion region 142 and the reset transistor 143.
  • the floating diffusion region 142 is connected to the reset power supply through the conductive reset transistor 143, and the photosensitive element 121 and the floating diffusion region 142 are in the reset state.
  • the photo-generated carriers in the photosensitive element 121 are emptied, and then the transfer tube 141 is turned off; in the exposure stage, the transfer tube 141 remains closed, and the photosensitive element 121 generates photo-generated carriers under illumination; in the signal readout stage
  • the transfer tube 141 can be controlled to communicate with the photosensitive element 121 and the floating diffusion region 142, so that the photogenerated carriers in the photosensitive element 121 are poured into the floating diffusion region 142, and the potential of the floating diffusion region 142 changes as the photogenerated carriers enter. Low, after the transmission of photogenerated carriers is completed, the transmission tube 141 is closed.
  • the image sensor 100 further includes a source follower transistor 144 and a row gate transistor 145 for transmitting the voltage signal of the floating diffusion region 142 to peripheral circuits.
  • the metal interconnection layer 132 is also used for connecting the floating diffusion region 142 and the source follower pipe 144 , and can also be used for connecting the source follower pipe 144 and the row gate pipe 145 .
  • the photosensitive element 121 can receive light from the back of the image sensor 100 , and it can be understood that the image sensor 100 is a backside illuminated image sensor 100 .
  • the metal interconnection region 130 is provided on one side of the semiconductor substrate 110
  • the optical component 150 is provided on the other side of the semiconductor substrate 110 , and the optical component 150 can guide light to the photosensitive element 121 .
  • optical assembly 150 can direct light from the back of image sensor 100 to photosensitive element 121 . It can be understood that the back surface of the image sensor 100 is the side away from the metal interconnection region 130 .
  • the optical assembly 150 includes a color filter 151 (color filter, CF) and/or a micro lens array 152 (micro lens, ML).
  • the color filter 151 is used to filter light of a specific wavelength
  • the microlens array 152 is used to focus the light on the photosensitive element 121 .
  • the optical assembly 150 may further include an anti-reflection coating or the like, wherein the anti-reflection coating can increase the amount of light entering the semiconductor substrate 110 .
  • a metal-dielectric-metal capacitor 160 (MOM capacitor) is formed in the metal interconnection region 130 to reflect light toward the photosensitive element 121 .
  • the metal-dielectric-metal capacitor 160 is used to reflect the light irradiated to the metal-dielectric-metal capacitor 160 to the photosensitive element 121 .
  • the metal-dielectric-metal capacitor 160 is located on one side of the photosensitive element 121 , and the side is the side of the photosensitive element 121 away from the optical assembly 150 .
  • the light from the back of the image sensor 100 reaches the photosensitive element 121 through the optical component 150 , a part of the light induces photo-generated carriers in the photosensitive element 121 , and the other part of the light penetrates the photosensitive element 121 to reach the photosensitive element 121 .
  • the metal-dielectric-metal capacitor 160 , and the metal-dielectric-metal capacitor 160 can reflect this part of the light toward the photosensitive element 121 to induce photo-generated carriers in the photosensitive element 121 .
  • a part of the light from the backside of the image sensor 100 can reach the metal-dielectric-metal capacitor 160 through the semiconductor substrate 110, and the metal-dielectric-metal capacitor 160 can reflect this part of the light toward the photosensitive element 121 for the purpose of Photo-generated carriers are induced in the photosensitive element 121 .
  • the metal-dielectric-metal capacitor 160 in the metal interconnection region 130 of the image sensor 100 , the light path of the light from the backside of the image sensor 100 on the semiconductor substrate 110 , especially on the photosensitive element 121 is made The improvement can improve the light absorption and conversion efficiency of the photosensitive element 121 and improve the quantum efficiency.
  • the switching element 104 due to the addition of the switching element 104 and the metal-dielectric-metal capacitor 160, when the charge of the floating diffusion region 142 is too high or too low, the switching element 104 can control the pairing of the metal-dielectric-metal capacitor 160 to floating.
  • the diffusion region 14 is placed for charging and discharging.
  • the metal-dielectric-metal capacitor 160 includes electrodes 161 formed on the metal interconnect layer 132 , and a dielectric 162 between the electrodes 161 .
  • the electrode 161 can be obtained by exposing and etching the metal layer formed by physical vapor deposition when the metal interconnection layer 132 is formed. Therefore, the formation process of the metal-dielectric-metal capacitor 160 is simple and controllable, and it is easy to realize mass production.
  • the electrode 161 of the metal-dielectric-metal capacitor 160 is made of metal materials such as copper alloy and aluminum, which has a good reflection effect on light, and can reflect light toward the photosensitive element 121 .
  • the metal-dielectric-metal capacitor 160 includes an electrode 161 formed on at least one metal interconnection layer 132, the electrode 161 includes a plurality of metal strips, and the dielectric 131 is filled between the different metal strips, that is, the electrode 161 The medium 162 between them, wherein one of the two adjacent metal strips can be used as a positive plate, and the other can be used as a negative plate. It can be understood that the positive electrode plate and the negative electrode plate formed on each metal interconnection layer 132 can form a capacitor of a lateral structure in the form of fingers.
  • the size of the metal-dielectric-metal capacitor 160 can be set according to the size of the photosensitive element 121 , for example, the area of the area where the electrode 161 is located on a metal interconnection layer 132 is not smaller than that of the photosensitive element 121 projected on the metal interconnection layer 132 . area to sufficiently reflect light toward the photosensitive element 121 .
  • the metal-dielectric-metal capacitor 160 includes electrodes 161 formed on at least two metal interconnect layers 132 , respectively.
  • the metal-dielectric-metal capacitor 160 includes a first electrode 1611 formed on the first metal interconnection layer 1321 and a second electrode 1611 formed on the second metal interconnection layer 1322 . Electrode 1612.
  • the first metal interconnection layer 1321 and the second metal interconnection layer 1322 are the second and third metal interconnection layers 132 from top to bottom in the metal interconnection region 130 , respectively.
  • the first metal interconnection layer 1321 and the second metal interconnection layer 1322 are the first and second metal interconnection layers 132 from top to bottom in the metal interconnection region 130 , respectively.
  • the first metal interconnection layer 1321 and the second metal interconnection layer 1322 are the first and third metal interconnection layers 132 from top to bottom in the metal interconnection region 130 , respectively.
  • the metal interconnection layer 132 in the metal interconnection region 130 is not limited to four layers, for example, it can be two layers, three layers, five layers or more; the electrode 161 of the metal-dielectric-metal capacitor 160 can be The adjacent metal interconnection layers 132 can be formed, and can also be formed on the metal interconnection layers 132 spaced apart; the electrodes 161 of the metal-dielectric-metal capacitor 160 can be formed on several metal interconnection layers 132 in the middle of the metal interconnection region 130, Metal interconnect layers 132 may also be formed at the edges of metal interconnect regions 130 .
  • the first electrode 1611 includes a plurality of first metal strips 101 arranged at intervals
  • the second electrode 1612 includes a plurality of second metal strips 102 arranged at intervals.
  • part of the light irradiates the second electrode 1612 and is reflected by the second metal strip 102 of the second electrode 1612 to the photosensitive element 121 .
  • part of the light passes through the interval between the second metal strips 102 of the second electrode 1612 and irradiates the first metal strip 101 , and is reflected by the first metal strip 101 to the photosensitive element 121 .
  • the light reaching the metal-dielectric-metal capacitor 160 may be repeatedly reflected between the metal strips of a multi-level level, and then directed to the photosensitive element 121 through the space between the metal strips of a certain level.
  • the number and spacing of the metal interconnection layers 132 forming the electrodes 161 can be set so that more light reaching the metal-dielectric-metal capacitor 160 can be reflected to the photosensitive element 121 .
  • the interval between the first metal strips 101 and/or the interval between the second metal strips 102 can be set, so that more light reaching the metal-dielectric-metal capacitor 160 can be reflected to the photosensitive element 121.
  • a capacitor of a vertical structure can also be formed between the metal strips formed in the electrodes 161 of different metal interconnection layers 132 .
  • the included angle between the first metal strip 101 and the second metal strip 102 is 60 degrees to 90 degrees.
  • the first metal strip 101 and the second metal strip 102 are perpendicular to each other to form a braided structure. So that the light reaching the metal-dielectric-metal capacitor 160 can be more reflected to the photosensitive element 121 .
  • the capacitance value is determined by the discharge speed of the metal-dielectric-metal capacitor 160 formed by the first metal strip 101 and the second metal strip 102 . Further, the angle between the first metal strip 101 and the second metal strip 102 is determined according to the capacitance value between the first metal strip 101 and the second metal strip 102 .
  • the capacitance value of the metal-dielectric-metal capacitor 160 is increased by increasing the facing area of the capacitor substrate (ie, the facing area between the first metal strip 101 and the second metal strip 102 ). It should be noted that, when the facing area between the first metal strip 101 and the second metal strip 102 increases, the included angle (ie, the angle) between the first metal strip 101 and the second metal strip 102 decreases.
  • the capacitance value is determined by the discharge speed of the metal-dielectric-metal capacitor 160 formed by the first metal strip 101 and the second metal strip 102 .
  • the distance between the first metal strip 101 and the second metal strip 102 may be determined according to the capacitance value.
  • the capacitance value of the metal-dielectric-metal capacitor 160 is increased by decreasing the distance of the capacitor substrate (ie, the distance between the first metal strip 101 and the second metal strip 102 ).
  • the capacitance value of the metal-dielectric-metal capacitor 160 can be determined by the discharge speed of the metal-dielectric-metal capacitor 160, and the first metal strip 101 and the second metal strip 101 and the second metal can be determined according to the determined capacitance value.
  • the size and position of the metal-dielectric-metal capacitor 160 is determined according to the size and position of the photosensitive region.
  • the first metal strips 101 and the second metal strips 102 can also be arranged in parallel, and the light incident at a specific angle passing through the interval between the second metal strips 102 of the second electrode 1612 can also be irradiated on the second metal strip 102 .
  • a metal strip 101 is reflected by the first metal strip 101 to the photosensitive element 121 .
  • the first metal interconnection layer 1321 , the second metal interconnection layer 1322 , and the third metal interconnection layer 1323 are the first, second, and third metal layers of the metal interconnection region 130 from top to bottom, respectively.
  • Interconnect layer 132 is the first, second, and third metal layers of the metal interconnection region 130 from top to bottom, respectively.
  • the metal-dielectric-metal capacitor 160 further includes a third electrode 1613 formed on the third metal interconnection layer 1323 .
  • the three-layer electrodes 161 By arranging the three-layer electrodes 161, the light reaching the metal-dielectric-metal capacitor 160 can be more reflected to the photosensitive element 121, for example, the light passing through the metal-dielectric-metal capacitor 160 can be reduced.
  • the first electrode 1611 when there is a third metal interconnection layer 1323 between the first metal interconnection layer 1321 and the second metal interconnection layer 1322 , the first electrode 1611 includes a plurality of spaced
  • the first metal strip 101 and the second electrode 1612 include a plurality of second metal strips 102 arranged at intervals, and the third electrode 1613 includes a plurality of third metal strips 103 arranged at intervals.
  • the angle between the first metal strip 101 and the third metal strip 103 is 60 degrees to 90 degrees
  • the angle between the second metal strip 102 and the third metal strip 103 is 60 degrees to 90 degrees.
  • the first metal strip 101 and the third metal strip 103 are perpendicular to each other, and the first metal strip 101 and the second metal strip 102 are parallel to each other.
  • the metal-dielectric-metal capacitor 160 can be reflected to the photosensitive element 121 .
  • the first metal strips 101 and the second metal strips 102 are staggered in the width direction of the first metal strips 101 , so that more light reaching the metal-dielectric-metal capacitor 160 can be absorbed. reflected to the photosensitive element 121 .
  • the metal-dielectric-metal capacitor 160 is connected to the metal line 1301 of the metal interconnection layer 132 , so that the capacitance of the image sensor 100 can be improved.
  • one end of the metal-dielectric-metal capacitor 160 is used to connect to the power supply VDD, and the other end is connected to the floating diffusion region 142 through a switching element 104 .
  • the switching element 104 When the switching element 104 is turned on, the metal-dielectric-metal capacitor 160 can be charged by the floating diffusion region 142 or discharged to the floating diffusion region 142 .
  • the switching element 104 may be a DCG (Dual Conversion Gain, double conversion gain) transistor, for example, including a polysilicon gate (poly gate) formed on the semiconductor substrate 110 .
  • DCG Direct Conversion Gain, double conversion gain
  • the floating diffusion region 142 needs to store more photo-generated carriers, and the switching element 104 can be controlled to be turned on, so that the metal-dielectric-metal capacitor 160 can store more photo-generated carriers. Part of the photo-generated carriers to prevent the loss of image details in bright places; when the image sensor 100 is in a dark environment, the floating diffusion region 142 needs to store less photo-generated carriers, and the switching element 104 can be controlled to be turned off, and the photo-generated carriers can be turned off.
  • the current can be stored in the floating diffusion region 142 . Thereby, the dynamic range of the image sensor 100 can be improved.
  • the optical path of the light from the backside of the image sensor on the semiconductor substrate, especially on the photosensitive element is obtained.
  • the improvement can improve the light absorption and conversion efficiency of the photosensitive element, and improve the quantum efficiency.
  • FIG. 13 is a schematic flowchart of a manufacturing method of an image sensor provided by an embodiment of the present application.
  • the manufacturing method includes steps S110 to S140.
  • Step S110 providing a semiconductor substrate.
  • a P-type silicon substrate is provided.
  • Step S120 forming a pixel array in the semiconductor substrate, where the pixel array includes photosensitive elements.
  • trench isolations are formed on the front side of the silicon substrate; then photosensitive elements are formed between the trench isolations.
  • a photosensitive element is formed between the trench isolation regions on the front side of the silicon substrate through processes such as ion implantation and heat treatment, and a transfer tube, a floating diffusion region, and the like can also be formed.
  • Step S130 forming a metal interconnection region on one side of the semiconductor substrate, and forming a metal-dielectric-metal capacitor in the metal interconnection region.
  • the metal interconnection region includes a dielectric and a plurality of metal interconnection layers disposed in parallel in the dielectric, the metal interconnection layers being connected to the photosensitive element.
  • a metal interconnection region is formed on the photosensitive element, and a metal-dielectric-metal capacitor is formed at the same time, and the metal-dielectric-metal capacitor can be formed on different metal interconnection layers of the metal interconnection region, such as the first to the first Between the three metal interconnect layers, or place two to three layers of metal-dielectric-metal capacitors in the metal interconnect region according to design requirements, for example, metal-dielectric-metal capacitors can be located in the second to third metal interconnect layers at the same time, or The first to second metal interconnection layers, or between the first to third metal interconnection layers.
  • Step S140 performing thinning processing and forming an optical component on the other side of the semiconductor substrate.
  • the silicon substrate is inverted so that its backside faces up, corresponding backside thinning, backside antireflection coating growth, and fabrication of color filters and microlens arrays are performed.
  • the backside of the silicon substrate can be thinned to a thickness of two to three microns required by the design through corresponding dry and wet processes.
  • the metal-dielectric-metal capacitor is formed on one side of the photosensitive element, and this side is the side of the photosensitive element away from the optical component, and the metal-dielectric-metal capacitor is For reflecting the light irradiated to the metal-dielectric-metal capacitor to the photosensitive element.
  • the metal-dielectric-metal capacitor includes an electrode of the metal interconnect layer and the dielectric formed between the electrodes.
  • forming a metal interconnection region on one side of the semiconductor substrate, and forming a metal-dielectric-metal capacitor in the metal interconnection region includes:
  • Electrodes are formed on at least two of the metal interconnect layers.
  • forming a metal interconnection region on one side of the semiconductor substrate, and forming a metal-dielectric-metal capacitor in the metal interconnection region includes:
  • a second electrode is formed on the second metal interconnect layer.
  • a third metal interconnection layer is formed on a side of the first metal interconnection layer away from the optical component.
  • the first electrode includes a plurality of spaced apart first metal strips and the second electrode includes a plurality of spaced apart second metal strips.
  • the first metal strip and the second metal strip are perpendicular to each other.
  • a third electrode is formed on the third metal interconnect layer.
  • the first electrode includes a plurality of spaced apart first metal strips
  • the second electrode includes a plurality of spaced apart second metal strips
  • the third electrode includes a plurality of spaced apart first metal strips Three metal bars.
  • the angle between the first metal strip and the third metal strip is 60 degrees to 90 degrees, and the angle between the second metal strip and the third metal strip is 60 degrees to 90 degrees.
  • first metal strip and the third metal strip are perpendicular to each other, and the first metal strip and the second metal strip are parallel to each other.
  • the first metal strips and the second metal strips are staggered in the width direction of the first metal strips.
  • forming a metal interconnection region on one side of the semiconductor substrate includes:
  • a metal line connecting the photosensitive element is formed on the metal interconnect layer, and the metal line is connected to the metal-dielectric-metal capacitor.
  • the method further includes:
  • a switching element is formed connecting the floating diffusion region and the metal-dielectric-metal capacitor.
  • a metal-dielectric-metal capacitor is formed in the metal interconnection region of the image sensor, so that light from the backside of the image sensor is transmitted on the semiconductor substrate, especially on the photosensitive element.
  • the optical path is improved, the light absorption and conversion efficiency of the photosensitive element can be improved, and the quantum efficiency can be improved.
  • FIG. 14 is a schematic block diagram of an imaging device 600 provided by an embodiment of the present application.
  • This imaging device 600 is equipped with the aforementioned image sensor 601 .
  • the imaging device 600 may further include a processor 602 , where the processor 602 is configured to process the image data output by the image sensor 601 into a captured picture that can be presented on the display screen 603 .
  • the imaging device 600 may further include a display screen 603 , and the processor 602 is configured to process the image data output by the image sensor 601 into a shooting picture that can be presented on the display screen 603 .
  • the imaging device may be a terminal.
  • the terminal may be a terminal device integrated with a camera and a display screen, including but not limited to a smart phone, a tablet, a handheld computer, a camera, and the like.
  • the camera in the terminal can be used to realize the functions of taking pictures and video
  • the display screen can be used to realize the preview function of the shooting picture, that is, by displaying the picture currently collected by the camera in real time for preview, so as to achieve the viewfinder. Effect.
  • the imaging device 600 may be applied in the fields of digital still cameras, cellular phones, surveillance, and automobiles, and may also be applied in the fields of drones, robots, virtual reality (VR), and augmented reality (AR).
  • VR virtual reality
  • AR augmented reality

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un capteur d'image (100), comprenant : un substrat semi-conducteur (110), une matrice de pixels (120), une région d'interconnexion métallique (130) et un ensemble optique (150). La matrice de pixels (120) comprend un élément photosensible (121), et la région d'interconnexion métallique (130) comprend un diélectrique (131) et une pluralité de couches d'interconnexion métalliques (132) disposées en parallèle dans le diélectrique (131) ; un condensateur métal-diélectrique-métal (160) est formé dans la région d'interconnexion métallique (130) pour réfléchir la lumière vers l'élément photosensible (121). L'effet d'imagerie peut être amélioré. La présente invention concerne en outre un procédé de fabrication du capteur d'image et un dispositif d'imagerie.
PCT/CN2020/106396 2020-07-31 2020-07-31 Capteur d'image et son procédé de fabrication, et dispositif d'imagerie le comprenant WO2022021418A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202080016808.2A CN113491011A (zh) 2020-07-31 2020-07-31 图像传感器及其制作方法、搭载图像传感器的成像装置
PCT/CN2020/106396 WO2022021418A1 (fr) 2020-07-31 2020-07-31 Capteur d'image et son procédé de fabrication, et dispositif d'imagerie le comprenant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/106396 WO2022021418A1 (fr) 2020-07-31 2020-07-31 Capteur d'image et son procédé de fabrication, et dispositif d'imagerie le comprenant

Publications (1)

Publication Number Publication Date
WO2022021418A1 true WO2022021418A1 (fr) 2022-02-03

Family

ID=77933298

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/106396 WO2022021418A1 (fr) 2020-07-31 2020-07-31 Capteur d'image et son procédé de fabrication, et dispositif d'imagerie le comprenant

Country Status (2)

Country Link
CN (1) CN113491011A (fr)
WO (1) WO2022021418A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090068599A1 (en) * 2006-02-13 2009-03-12 Do Young Lee Method of manufacturing image sensor
US20100123213A1 (en) * 2008-11-17 2010-05-20 Shuxian Chen Metal-insulator-metal capacitors
CN107910340A (zh) * 2017-11-01 2018-04-13 德淮半导体有限公司 一种图像传感器及其制备方法
CN109509763A (zh) * 2018-10-29 2019-03-22 上海微阱电子科技有限公司 一种提高量子效率的图像传感器像素单元结构和形成方法
CN111129053A (zh) * 2019-12-23 2020-05-08 上海集成电路研发中心有限公司 一种cmos图像传感器像素单元结构和形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204797A (ja) * 2010-03-24 2011-10-13 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP6183718B2 (ja) * 2012-06-25 2017-08-23 パナソニックＩｐマネジメント株式会社 固体撮像装置
FR3036850A1 (fr) * 2015-06-01 2016-12-02 St Microelectronics Crolles 2 Sas Capteur d'image de type "face arriere" ayant une faible reflectivite
CN106098714B (zh) * 2016-06-07 2019-06-07 上海集成电路研发中心有限公司 背照式全局曝光像素单元结构及制造方法
CN108281446A (zh) * 2018-01-30 2018-07-13 德淮半导体有限公司 图像传感器及形成图像传感器的方法
CN108847418A (zh) * 2018-06-15 2018-11-20 上海微阱电子科技有限公司 一种增强近红外量子效率的图像传感器结构和形成方法
CN108807444A (zh) * 2018-07-19 2018-11-13 上海集成电路研发中心有限公司 Cmos图像传感器及其制备方法
CN109216388A (zh) * 2018-08-10 2019-01-15 上海集成电路研发中心有限公司 增强图像传感器近红外性能的像素单元结构和形成方法
WO2021016838A1 (fr) * 2019-07-30 2021-02-04 深圳市汇顶科技股份有限公司 Capteur d'image et son procédé de fabrication, puce et appareil portatif

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090068599A1 (en) * 2006-02-13 2009-03-12 Do Young Lee Method of manufacturing image sensor
US20100123213A1 (en) * 2008-11-17 2010-05-20 Shuxian Chen Metal-insulator-metal capacitors
CN107910340A (zh) * 2017-11-01 2018-04-13 德淮半导体有限公司 一种图像传感器及其制备方法
CN109509763A (zh) * 2018-10-29 2019-03-22 上海微阱电子科技有限公司 一种提高量子效率的图像传感器像素单元结构和形成方法
CN111129053A (zh) * 2019-12-23 2020-05-08 上海集成电路研发中心有限公司 一种cmos图像传感器像素单元结构和形成方法

Also Published As

Publication number Publication date
CN113491011A (zh) 2021-10-08

Similar Documents

Publication Publication Date Title
CN209731402U (zh) 图像传感器像素
KR102398120B1 (ko) 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
US10204948B2 (en) Solid-state imaging device, solid-state imaging device manufacturing method, electronic device, and lens array
US9472589B2 (en) Solid-state imaging device and electronic apparatus
CN108305884B (zh) 像素单元和形成像素单元的方法及数字相机成像系统组件
CN204539294U (zh) 成像电路和系统
CN101814515B (zh) 固态图像拾取装置和电子装置
US8547459B2 (en) Solid-state imaging device, manufacturing method of solid-state imaging device and electronic apparatus
KR20160044879A (ko) 픽셀, 상기 픽셀을 포함하는 이미지 센서, 및 상기 픽셀을 포함하는 이미지 처리 시스템
CN108282625B (zh) 像素单元和形成像素单元的方法及数字相机成像系统组件
CN108598100B (zh) 一种减小存储节点漏光的全局像元结构及制作方法
CN108269819B (zh) 像素单元和形成像素单元的方法及数字相机成像系统组件
US10075663B2 (en) Phase detection pixels with high speed readout
CN107240593A (zh) 一种堆叠式全局曝光像素单元结构及其形成方法
US11670660B2 (en) Pixel array included in auto-focus image sensor and auto-focus image sensor including the same
TW201733343A (zh) 全域快門校正
US20240072092A1 (en) Image sensor
WO2022021418A1 (fr) Capteur d'image et son procédé de fabrication, et dispositif d'imagerie le comprenant
KR20150122866A (ko) 이미지 센서 및 이의 제조 방법
CN109148497B (zh) 一种防止寄生光响应的全局像元结构及形成方法
US10211253B1 (en) Self-alignment of a pad and ground in an image sensor
CN109494232B (zh) 一种防漏光cmos图像传感器全局像元结构及形成方法
WO2022261978A1 (fr) Capteur d'image éclairé par l'avant
CN109411493B (zh) 一种防漏光全局像素单元的结构和形成方法
WO2022000349A1 (fr) Capteur d'image et son procédé de fabrication, et dispositif d'imagerie le comprenant

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20947339

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20947339

Country of ref document: EP

Kind code of ref document: A1