WO2022016962A1 - 温度调控系统及温度调控方法 - Google Patents

温度调控系统及温度调控方法 Download PDF

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Publication number
WO2022016962A1
WO2022016962A1 PCT/CN2021/092910 CN2021092910W WO2022016962A1 WO 2022016962 A1 WO2022016962 A1 WO 2022016962A1 CN 2021092910 W CN2021092910 W CN 2021092910W WO 2022016962 A1 WO2022016962 A1 WO 2022016962A1
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Prior art keywords
temperature
wafer
temperature control
edge
gas
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PCT/CN2021/092910
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English (en)
French (fr)
Inventor
余先勇
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to US17/386,712 priority Critical patent/US20220026937A1/en
Publication of WO2022016962A1 publication Critical patent/WO2022016962A1/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • the present application relates to the field of semiconductors, and in particular, to a temperature control system and a temperature control method.
  • the integrated circuit is composed of many layers of circuit boards overlapping, it is necessary to ensure that the alignment accuracy (ie registration accuracy OVL) of each layer of circuit boards and the previous or next layer of circuit boards is within the preset range; if The registration accuracy (OVL) value exceeds the preset range, which may cause the entire integrated circuit to fail to complete the design work. Therefore, in the production process of each layer of the circuit board of the integrated circuit, the nesting of the circuit board of this layer and the circuit board of the previous layer should be adjusted. Measure with quasi-accuracy.
  • Embodiments of the present application provide a temperature control system and a temperature control method, which can accurately control the temperature of a specific position of a wafer through multiple points, thereby ensuring uniform temperature distribution of the wafer.
  • the embodiment of the present application provides a temperature control system, including: a carrying table for carrying wafers, the carrying table includes a center carrier and a plurality of edge carriers, and the plurality of edge carriers surround the center carrier. Setting; multiple temperature control modules, each temperature control module is connected to an edge stage, the temperature control module is used to adjust the temperature of the corresponding area of the wafer on the edge stage; the parameter acquisition module is used to obtain the wafer on the stage The processing module, based on the temperature of the wafer, obtains the abnormal temperature area of the wafer, and adjusts the temperature of the temperature control module corresponding to the abnormal temperature area.
  • the temperature of the wafer on the carrier table is acquired through the parameter acquisition module to acquire the abnormal temperature region of the wafer, that is, to acquire the specific position of the wafer with a higher temperature or a specific position with a lower temperature; and then process the wafer.
  • the module obtains the corresponding temperature control module based on the position of the abnormal temperature area; the temperature of the abnormal temperature area of the wafer is adjusted by the temperature control module, so as to realize the precise control of the temperature of the specific position of the wafer, so as to ensure the uniform temperature distribution of the wafer.
  • the edge stage includes: a support member with a gas circulation area in the support member; and the temperature control module, based on a signal sent by the processing module, feeds gas with a preset temperature into the gas circulation area.
  • the support member includes: an air extraction hole and an air inlet hole communicated with the gas circulation area; the air extraction hole is used for extracting the gas in the gas circulation area; The temperature of the wafer is regulated by presetting the temperature of the gas in the gas flow area, the cost is low and the solution is environmentally friendly.
  • the support member includes: an edge support part, a first support part and a plurality of discrete second support parts; the edge support part is arranged around the first support part, and there is a gap between the edge support part and the first support part; the second support part The support portion is located in the gap, and a gas circulation area is enclosed between the edge support portion, the first support portion and the second support portion.
  • the temperature control module only adjusts the temperature of the wafer in the corresponding area, so as to improve the accuracy of the temperature adjustment of the wafer.
  • the edge stages arranged around the center stage form a plurality of concentric rings centered on the center stage.
  • the edge carriers are arranged in a distributed manner around forming concentric rings, and the arrangement of the edge carriers is tight, and the temperature control module can increase the temperature control position of the wafer.
  • the temperature adjustment rates of the temperature control modules connected to edge carriers located in concentric rings with different radii are different. As the radius of the concentric rings increases, the temperature adjustment rate of the temperature control modules slows down.
  • it also includes: a constant temperature pipeline, and a constant temperature liquid or a constant temperature gas is passed through the constant temperature pipeline. Additionally, thermostatic conduits are located in the gaps between the plurality of edge carriers. In addition, the temperature range of the constant temperature liquid or the constant temperature gas is 20°C to 25°C. The temperature of the wafer is adjusted through the constant temperature pipeline and the constant temperature liquid, so that the overall temperature of the wafer tends to change with the constant temperature liquid or the constant temperature gas.
  • the parameter acquisition module includes a plurality of temperature sensors or infrared temperature sensors arranged at intervals, which are used to acquire the temperature of multiple positions of the wafer on the carrier; the processing sub-module, based on the acquired temperature of the multiple positions of the wafer, obtains the Circular temperature profile.
  • the embodiment of the present application also provides a temperature control method, which is applied to the above temperature control system, including: obtaining the temperature of the wafer on the carrier; The edge stage corresponding to the area of the circle that needs to be temperature adjusted; the temperature control module connected to the edge stage is used to adjust the temperature of the area of the wafer that needs to be adjusted.
  • obtaining the area where the temperature adjustment of the wafer needs to be performed includes: obtaining the temperature distribution map of the wafer based on the temperature of multiple positions of the wafer; obtaining the wafer temperature distribution map based on the temperature distribution map of the wafer Areas that require temperature adjustment.
  • the temperature range of the preset temperature is 20°C ⁇ 25°C.
  • the method further includes: adjusting the temperature of the wafer on the carrier table to a preset temperature by using a constant temperature liquid or a constant temperature gas.
  • the temperature adjustment rates of the temperature control modules connected to edge carriers located in concentric rings with different radii are different. As the radius of the concentric rings increases, the temperature adjustment rate of the temperature control modules slows down.
  • the temperature adjustment rate of the temperature control module slows down, including: the temperature control modules located in the concentric rings with different radii have the same gas injection flow rate and different gas extraction flow rates, and with the concentric ring radius increases, the exhaust flow of the temperature control module decreases.
  • the abnormal temperature area of the wafer is obtained by obtaining the temperature of the wafer on the carrier, that is to obtain the specific position of the wafer with a higher temperature or a specific position with a lower temperature;
  • the temperature of the circle is obtained to obtain the edge stage corresponding to the position of the abnormal temperature area of the wafer;
  • the temperature control module connected to the edge stage adjusts the temperature of the abnormal temperature area of the wafer, so as to realize the precise control of the temperature of the specific position of the wafer, This ensures that the temperature of the wafer is evenly distributed.
  • 1 to 5 are schematic structural diagrams of a temperature control system according to an embodiment of the present application.
  • FIG. 6 is a schematic flowchart of a temperature control method provided by another embodiment of the present application.
  • an embodiment of the present application provides a temperature control system, including: a carrier table for carrying wafers, the carrier table includes a center carrier table and a plurality of edge carriers, and the plurality of edge carriers surrounds the center carrier table. Setting; multiple temperature control modules, each temperature control module is connected to an edge stage, the temperature control module is used to adjust the temperature of the corresponding area of the wafer on the edge stage; the parameter acquisition module is used to obtain the wafer on the stage The processing module, based on the temperature of the wafer, obtains the abnormal temperature area of the wafer, and adjusts the temperature of the temperature control module corresponding to the abnormal temperature area.
  • An embodiment of the present application realizes precise regulation of the temperature of a specific position of the wafer through multiple points, thereby ensuring uniform temperature distribution of the wafer.
  • 1 to 5 are schematic structural diagrams of a temperature control system provided by an embodiment of the present application, and the temperature control system of this embodiment will be specifically described below.
  • the temperature control system is applied to the exposure machine.
  • the exposure machine is used to measure the registration accuracy (OVL) of the wafer.
  • OTL registration accuracy
  • the wafer is firstly transported to the carrier, and the carrier includes a center carrier. 103 and a plurality of edge carriers 102, a plurality of edge carriers 102 are arranged around the center carrier 103, and the center carrier 103 is used to carry the wafer and carry the wafer for rotation.
  • the pre-alignment device 104 It is used to obtain the eccentricity of the wafer, obtain the position of the wafer placed on the carrier through the eccentricity, and correct the position of the subsequent wafer placed on the carrier through the eccentricity of the wafer.
  • the pre-alignment device 104 includes an edge sensor; during the rotation of the wafer on the center stage 103, the edge sensor is used to obtain the distance between the position of the wafer edge and the edge sensor, thereby obtaining the wafer rotation A graph of the angle and the distance between the position of the wafer edge and the edge sensor, according to the rotation angle of the wafer corresponding to the maximum distance and the minimum distance between the position of the wafer edge and the edge sensor in the graph, obtain the wafer The offset distance and offset angle placed on the carrier table, that is, the eccentricity of the wafer is obtained.
  • the carrier table includes a center carrier table 103, and the center carrier table 103 is used for carrying and rotating the wafer.
  • the center stage 103 includes a first support table 113 , a first air hole 123 , a second support table 133 and a second air hole 143 .
  • the first support table 113 is higher than the second support table 133 and is used to carry the wafer; when the center stage 103 carries the wafer, the first support table 113, the second support table 133 and the bottom surface of the wafer form a seal space, the first air hole 123 and the second air hole 143 are used to extract the gas in the closed space or pass the gas into the closed space first;
  • the second air hole 143 extracts part of the gas in the closed space, the closed space and the external environment form a pressure difference, and the wafer is fixed on the center stage 103 under the action of atmospheric pressure; when the wafer needs to be taken out, the first air hole 123 and the The second air hole 143 supplements the gas in the sealed space, so as to restore the pressure difference between the sealed space and the external environment, so as to remove the wafer.
  • the amount of gas extracted from the closed space is determined according to the size of the closed space in the actual application process, and the purpose is to fix the wafer on the center stage 103 by atmospheric pressure.
  • the two air holes 143 limit the amount of gas extracted from the closed space.
  • the number of the second air holes 143 in FIG. 2 is three, which is an example of the number of the second air holes 143; in specific applications, the number of air holes 143 can be set according to the gas extraction speed, for example, 2 One, four, five, etc., the more the air holes 143 are provided, the faster the gas is extracted from the closed space through the air holes 143 .
  • the carrier further includes a plurality of edge carriers 102 , each edge carrier 102 is connected to at least one temperature control module (not shown) for adjusting the temperature of the corresponding region of the wafer on the carrier.
  • the edge stages 102 can be distributed at any position on the surface of the exposure machine.
  • a plurality of edge carriers 102 are arranged around the center carrier 103, and the edge carriers 102 arranged around the center carrier 103 form a plurality of concentric rings centered on the carrier.
  • the concentric rings close to the center stage 103 are the inner rings
  • the concentric rings far away from the center stage 103 are the outer rings
  • the concentric rings between the inner ring and the outer ring are the secondary outer rings.
  • the edge carriers 102 are arranged in a distributed manner around forming concentric rings, and the edge carriers 102 are closely arranged, so as to increase the position where the temperature control module connected to the edge carriers 102 can control the temperature of the wafer.
  • the edge stage 102 includes a support member.
  • the support member has a gas flow area 142 therein; in one example, referring to FIG. 3, the support member includes: an edge support portion 122, a first support portion 112 and a plurality of discrete second support portions 132, wherein the edge support portion 122 surrounds the first support portion 122.
  • a support portion 112 is provided, and there is a gap between the edge support portion 122 and the first support portion 112 , the second support portion 132 is located in the gap, and between the edge support portion 122 , the first support portion 112 and the second support portion 132 A gas flow area 142 is enclosed.
  • the temperature control module connected to the edge stage 102 is used to introduce gas with a preset temperature into the gas circulation area 142 .
  • the preset temperature is a target temperature for adjusting the wafer temperature.
  • the preset temperature is 22.5° C., because the optimal temperature of the wafer is 22.5° C. when the exposure machine is exposing the wafer.
  • the preset temperature may be a temperature range close to the optimal exposure temperature, such as 20°C to 25°C.
  • the support member further includes: an air exhaust hole 162 and an air intake hole 152 communicated with the gas circulation area. Gas at a preset temperature is introduced into the gas flow area 142 .
  • the air inlet 152 is connected to the air inlet duct 105 , the air inlet duct 105 is used for supplying gas to the air inlet 152 , and the air inlet duct 105 is provided with a temperature control module 106 for heating the air to a preset temperature.
  • the number of air intake holes 152 in FIG. 3 and FIG. 4 is three, which is an example of the number of air intake holes 152; in specific applications, the air intake holes 152 can be set according to the gas extraction speed For example, 2, 4, 5, etc., the more the air inlet holes 152 are set, the faster the gas is extracted from the gas circulation area 142 through the air inlet holes 152, and the temperature control module 106 is used to control the temperature. The effect is more uniform.
  • the temperature adjustment rates of the temperature control modules 106 connected to the edge carriers 102 in concentric rings with different radii are different. ), the rate of temperature adjustment of the temperature control module 106 connected to the edge stage 102 is slowed down.
  • the rate of temperature adjustment is controlled by the circulation rate of the preset temperature gas, specifically, the gas injection flow rate of the inner ring is 145000Pa, the air extraction flow rate of the inner ring is 22000Pa; the gas injection flow rate of the secondary outer ring is 145000Pa , The suction flow of the secondary outer ring is 21850Pa; the gas injection flow of the outer ring is 145000Pa, and the sobbing flow of the outer ring is 21700Pa.
  • the above-mentioned values of the suction flow rate and the gas injection flow rate of each concentric ring are only examples, and the purpose is to reflect the temperature adjustment of the temperature control module 106 connected to the edge stage 102 in the concentric rings with different radii in this embodiment.
  • the rates are different, which does not constitute a limitation to the embodiments of the present application.
  • the change of the circulation rate of the gas in this embodiment is realized by changing the gas injection flow rate by fixing the gas injection flow rate. This is achieved by changing the extraction flow at the same time.
  • the temperature control system further includes: a parameter acquisition module and a processing module.
  • the parameter acquisition module is used to acquire the temperature of the wafer on the center stage 103
  • the processing module is used to acquire the abnormal temperature region of the wafer based on the temperature, and adjust the temperature of the edge stage 102 connected to the edge stage 102 corresponding to the abnormal temperature region on the carrier stage.
  • the temperature of the temperature control module 106 is indirectly controlled by changing the temperature of the temperature control module 106 to regulate the temperature of the wafer in the abnormal temperature region.
  • the parameter acquisition module includes a plurality of temperature sensors or infrared temperature sensors arranged at intervals for acquiring the temperatures of multiple positions of the wafer on the carrier table. That is, the parameter acquisition module can be implemented in the following two ways:
  • the parameter acquisition module is an infrared temperature sensor.
  • the temperature of the wafer on the carrier table is obtained through the infrared temperature sensor. Due to the thermal sensitivity of the infrared temperature sensor, the temperature distribution map of the wafer can be directly obtained.
  • the parameter acquisition module is multiple temperature sensors set at intervals. A plurality of temperature sensors are used to acquire temperatures at various locations on the wafer on the stage.
  • the processing module further includes a processing sub-module for acquiring a temperature distribution map of the wafer based on the acquired temperatures of multiple positions of the wafer. By obtaining the wafer distribution map, the specific temperature distribution of the wafer can be accurately obtained, and the abnormal temperature region of the wafer can be obtained more accurately.
  • the temperature control system further includes: a constant temperature pipeline 107, which is supplied with a constant temperature liquid or a constant temperature gas, and is used to directionally change the temperature of the wafer on the bearing platform on the bearing platform, The temperature of the wafer changes in the direction of constant temperature liquid or constant temperature gas.
  • the constant temperature duct 107 is located in the gaps between the multiple edge carriers, that is, the constant temperature duct 107 is arranged around the edge carriers, which greatly covers the area of the wafer on the carrier table, and is not suitable for the wafers. The overall temperature control effect is better.
  • the temperature range of the constant temperature liquid or constant temperature gas is 20°C to 25°C, for example, 21°C, 22°C, 23°C and 24°C.
  • the temperature of the constant temperature liquid or constant temperature gas is 22.5°C, because when the exposure machine exposes the wafer, the optimal temperature of the wafer is 22.5°C, and the overall temperature of the wafer is 22.5°C. change, so that the wafer is at the optimal temperature during exposure, and the efficiency of subsequent wafer exposure is improved.
  • the temperature of the wafer on the carrier table is acquired through the parameter acquisition module to acquire the abnormal temperature region of the wafer, that is, to acquire the specific position of the wafer with a higher temperature or a specific position with a lower temperature; and then process the wafer.
  • the module obtains the corresponding temperature control module based on the position of the abnormal temperature area; the temperature of the abnormal temperature area of the wafer is adjusted by the temperature control module, so as to realize the precise control of the temperature of the specific position of the wafer, so as to ensure the uniform temperature distribution of the wafer.
  • each unit involved in this embodiment is a logical unit.
  • a logical unit may be a physical unit, a part of a physical unit, or multiple physical units.
  • a composite implementation of the unit in order to highlight the innovative part of the present application, this embodiment does not introduce units that are not closely related to solving the technical problem raised by the present application, but this does not mean that there are no other units in this embodiment.
  • Another embodiment of the present application relates to a temperature regulation method.
  • a temperature control method applied to the above temperature control system, includes: obtaining the temperature of the wafer on the carrier; obtaining the area of the wafer that needs to be adjusted based on the temperature of the wafer; obtaining the area corresponding to the area of the wafer that needs to be adjusted Edge stage; the temperature control module connected to the edge stage is used to adjust the temperature of the area of the wafer that needs to be adjusted.
  • Step 201 Obtain the temperature of the wafer measured by the parameter obtaining module.
  • the method further includes: Step 202 , acquiring a temperature distribution map of the wafer.
  • the temperature of the wafer is measured by a parameter acquisition module, where the parameter acquisition module includes a plurality of temperature sensors or infrared temperature sensors arranged at intervals for acquiring the temperature of multiple positions of the wafer on the carrier table. That is, the parameter acquisition module can be implemented in the following two ways:
  • the parameter acquisition module is an infrared temperature sensor.
  • the temperature of the wafer on the carrier table is obtained through the infrared temperature sensor. Due to the thermal sensitivity of the infrared temperature sensor, the temperature distribution map of the wafer can be directly obtained.
  • the parameter acquisition module is multiple temperature sensors set at intervals. A plurality of temperature sensors are used to acquire temperatures at various locations on the wafer on the stage.
  • the processing module further includes a processing sub-module for acquiring a temperature distribution map of the wafer based on the acquired temperatures of multiple positions of the wafer.
  • Step 203 acquiring a region of the wafer where temperature adjustment needs to be performed.
  • step 203 can also be directly entered through step 201 , that is, the wafer temperature obtained by the parameter obtaining module can directly obtain the region of the wafer where temperature adjustment needs to be performed.
  • Step 204 acquiring the edge stage corresponding to the region of the wafer where temperature adjustment needs to be performed.
  • step 205 the temperature of the wafer is adjusted through the temperature control module connected to the edge stage.
  • the processing module is used to obtain the abnormal temperature region of the wafer based on the temperature distribution map, that is, the region where the temperature of the wafer needs to be adjusted, and to obtain the temperature control module corresponding to the region according to the region where the temperature of the wafer needs to be adjusted,
  • the temperature of the temperature control module corresponding to the abnormal temperature area on the bearing platform is adjusted, and the temperature of the wafer in the abnormal temperature area is indirectly adjusted by changing the temperature of the temperature control module.
  • the edge stage includes a support member.
  • a gas circulation area is provided in the support member, and a temperature control module connected to the edge stage is used for introducing gas with a preset temperature into the gas circulation area.
  • the preset temperature is a target temperature for adjusting the wafer temperature.
  • the preset temperature is 22.5° C., because the optimal temperature of the wafer is 22.5° C. when the exposure machine is exposing the wafer.
  • the preset temperature may be a temperature range close to the optimal exposure temperature, such as 20°C to 25°C.
  • the support member includes: an air extraction hole communicated with the gas circulation area and an air inlet hole, the air extraction hole is used for extracting the gas in the gas circulation area, and the air inlet hole is used for introducing the gas of a preset temperature into the gas circulation area .
  • the air inlet is connected to an air inlet pipe, the air inlet pipe is used for providing gas to the air inlet hole, and a temperature control module is arranged on the air inlet pipe for heating the gas to a preset temperature.
  • the temperature adjustment rates of the temperature control modules connected to edge carriers located in concentric rings with different radii are different.
  • the rate of temperature regulation of the temperature control module is slowed down.
  • the temperature adjustment rate of the temperature control module slows down, including: the air injection flow rate of the temperature control modules connected to the edge carriers located in the concentric rings of different radii is the same, and the air extraction flow rate is different, And as the radius of the concentric ring increases, the air flow of the temperature control module decreases.
  • the rate of temperature adjustment is controlled by the circulation rate of the pre-set temperature gas, and the concentric rings include an inner ring, a secondary outer ring and an outer ring; wherein, the gas injection flow rate of the inner ring is 145000Pa, and the gas extraction flow rate of the inner ring is 145000Pa.
  • the gas injection flow rate of the secondary outer ring is 145000Pa
  • the extraction flow rate of the secondary outer ring is 21850Pa
  • the gas injection flow rate of the outer ring is 145000Pa
  • the sobbing flow rate of the outer ring is 21700Pa.
  • step 205 After the execution of step 205 is completed, a round of temperature regulation of the wafer on the carrier is completed, and the execution of step 202 is continued until there is no abnormal temperature region on the wafer.
  • the implementation process of the above method also includes: adjusting the temperature of the wafer on the carrier table to a preset temperature by using a constant temperature liquid or a constant temperature gas.
  • the temperature of the wafer on the stage is changed to a direction close to the preset temperature by using a constant temperature liquid or a constant temperature gas at a preset temperature.
  • the preset temperature ranges from 20°C to 25°C, for example, 21°C, 22°C, 23°C and 24°C.
  • the preset temperature is 22.5°C, because when the exposure machine exposes the wafer, the optimal temperature of the wafer is 22.5°C, and the overall temperature of the wafer is changed to the direction of 22.5°C, so that the wafer is The circle is at an optimal temperature during exposure, increasing the efficiency of subsequent wafer exposures.
  • the abnormal temperature area of the wafer is obtained by obtaining the temperature of the wafer on the carrier, that is to obtain the specific position of the wafer with a higher temperature or a specific position with a lower temperature;
  • the temperature of the circle is obtained to obtain the edge stage corresponding to the position of the abnormal temperature area of the wafer;
  • the temperature control module connected to the edge stage adjusts the temperature of the abnormal temperature area of the wafer, so as to realize the precise control of the temperature of the specific position of the wafer, This ensures that the temperature of the wafer is evenly distributed.

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Abstract

一种温度调控系统及温度调控方法，旨在对晶圆具体位置的温度进行精确调控，温度调控系统包括：承载台，包括中心载台（103）以及多个边缘载台（102），多个边缘载台（102）围绕中心载台（103）设置；多个温控模块（106），每个温控模块（106）都连接一个边缘载台（102），温控模块（106）用于调节边缘载台（102）上晶圆对应区域的温度；参数获取模块，用于获取承载台上的晶圆的温度；处理模块获取晶圆的温度异常区域，并调节与温度异常区域对应的温控模块（106）的温度。通过参数获取模块获取承载台上的晶圆的温度，以获取晶圆的温度异常区域；然后处理模块基于温度异常区域位置，获取对应的温控模块（106）。

Description

温度调控系统及温度调控方法
交叉引用
本申请引用于2020年7月21日递交的名称为“温度调控系统及温度调控方法”的第202010704689.1号中国专利申请，其通过引用被全部并入本申请。
技术领域
本申请涉及半导体领域，特别涉及一种温度调控系统及温度调控方法。
背景技术
由于集成电路是由很多层电路版重叠组成，因此必须保证每一层电路版与前一层电路版或后一层电路版的对准精度(即套准精度OVL)在预设范围内；如果套准精度(OVL)值超出预设范围，可能造成整个集成电路不能完成设计工作，因此在集成电路每一层电路板的制作的过程中，要对本层电路板与前一层电路板的套准精度进行测量。
然而申请人发现，在对晶圆进行OVL测量时，由于温度会造成的热胀冷缩效应，当晶圆的温度分布不均匀时，测量获取的OVL值并不准确。
发明内容
本申请实施例提供一种温度调控系统及温度调控方法，通过多个位点实现对晶圆具体位置的温度的精确调控，从而保证晶圆的温度均匀分布。
为解决上述技术问题，本申请实施例提供了一种温度调控系统，包括：承载台用于承载晶圆，承载台包括中心载台以及多个边缘载台，多个边缘载台围绕中心载台设置；多个温控模块，每个温控模块都连接一个边缘载台，温控模块用于调节边缘载台上晶圆对应区域的温度；参数获取模块，用于获取承载 台上的晶圆的温度；处理模块，基于晶圆的温度，获取晶圆的温度异常区域，并调节与温度异常区域对应的温控模块的温度。
与相关技术相比，通过参数获取模块获取承载台上的晶圆的温度，以获取晶圆的温度异常区域，即获取晶圆存在温度较高的具体位置或者温度较低的具体位置；然后处理模块基于温度异常区域位置，获取对应的温控模块；通过温控模块调节晶圆的温度异常区域的温度，实现对晶圆具体位置的温度的精确调控，从而保证晶圆的温度均匀分布。
另外，边缘载台包括：支撑部件，支撑部件内具有气体流通区域；温控模块基于处理模块发送的信号，向气体流通区域中通入预设温度的气体。另外，支撑部件包括：与气体流通区域相连通的抽气孔以及进气孔；抽气孔用于抽出气体流通区域内的气体；进气孔用于向气体流通区域通入预设温度的气体。通过在气体流通区域中预设温度的气体，对晶圆进行温度调节，成本较低且方案环保。
另外，支撑部件包括：边缘支撑部、第一支撑部和多个分立的第二支撑部；边缘支撑部环绕第一支撑部设置，且边缘支撑部与第一支撑部之间存在空隙；第二支撑部位于空隙中，且边缘支撑部、第一支撑部与第二支撑部之间围成气体流通区域。温控模块仅对对应区域的晶圆进行温度调节，以调高对晶圆温度调整的精确性。
另外，围绕中心载台环绕设置的边缘载台形成以中心载台为中心的多个同心环。通过环绕形成同心环的分布方式设置边缘载台，边缘载台的排布紧密，增加温控模块对晶圆进行温度调控的位点。
另外，位于不同半径的同心环中的边缘载台连接的温控模块的温度调节 速率不同，随着同心环半径的增大，温控模块温度调节的速率减缓。
另外，还包括：恒温管道，恒温管道中通有恒温液或恒温气体。另外，恒温管道位于多个边缘载台之间的间隙中。另外，恒温液或恒温气体的温度范围为20℃～25℃。通过恒温管道和恒温液对晶圆进行温度调整，使得晶圆整体温度具有趋向于恒温液或恒温气体改变的趋势。
另外，参数获取模块包括间隔设置的多个温度传感器或者红外温度传感器，用于获取承载台上的晶圆多个位置的温度；处理子模块，基于获取的晶圆多个位置的温度，获取晶圆的温度分布图。
本申请实施例还提供了一种温度调控方法，应用于上述温度调控系统，包括：获取承载台上晶圆的温度；基于晶圆的温度，获取晶圆需要进行温度调整的区域；获取与晶圆需要进行温度调整的区域对应的边缘载台；通过边缘载台连接的温控模块对晶圆需要进行温度调整的区域进行温度调整。
另外，基于所述晶圆的温度，获取晶圆需要进行温度调整的区域，包括：基于晶圆多个位置的温度，获取晶圆的温度分布图；基于晶圆的温度分布图，获取晶圆需要进行温度调整的区域。
另外，预设温度的温度范围为20℃～25℃。
另外，还包括：通过恒温液或恒温气体调整承载台上晶圆的温度于预设温度。
另外，位于不同半径的同心环中的边缘载台连接的温控模块的温度调节速率不同，随着同心环半径的增大，温控模块温度调节的速率减缓。
另外，随着同心环半径的增大，温控模块温度调节的速率减缓，包括：位于不同半径的同心环中的温控模块的注气流量相同、抽气流量不同，且随着 同心环半径的增大，温控模块的抽气流量减小。
相比于相关技术而言，通过获取承载台上的晶圆的温度，以获取晶圆的温度异常区域，即获取晶圆存在温度较高的具体位置或者温度较低的具体位置；然后基于晶圆的温度，获取与晶圆的温度异常区域位置对应的边缘载台；通过边缘载台连接的温控模块调节晶圆的温度异常区域的温度，实现对晶圆具体位置的温度的精确调控，从而保证晶圆的温度均匀分布。
附图说明
图1至图5为本申请一实施例提供的温度调控系统的结构示意图；
图6为本申请另一实施例提供的温度调控方法的流程示意图。
具体实施方式
目前，在对晶圆进行OVL测量时，由于温度会造成的热胀冷缩效应，当晶圆的温度分布不均匀时，测量获取的OVL值并不准确。
为解决上述问题，本申请一实施例提供了一种温度调控系统，包括：承载台用于承载晶圆，承载台包括中心载台以及多个边缘载台，多个边缘载台围绕中心载台设置；多个温控模块，每个温控模块都连接一个边缘载台，温控模块用于调节边缘载台上晶圆对应区域的温度；参数获取模块，用于获取承载台上的晶圆的温度；处理模块，基于晶圆的温度，获取晶圆的温度异常区域，并调节与温度异常区域对应的温控模块的温度。
本申请一实施例通过多个位点实现对晶圆具体位置的温度的精确调控，从而保证晶圆的温度均匀分布。
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合附图对本申请的各实施例进行详细的阐述。然而，本领域的普通技术人员可以理解， 在本申请各实施例中，为了使读者更好地理解本申请而提出了许多技术细节。但是，即使没有这些技术细节和基于以下各实施例的种种变化和修改，也可以实现本申请所要求保护的技术方案。以下各个实施例的划分是为了描述方便，不应对本申请的具体实现方式构成任何限定，各个实施例在不矛盾的前提下可以相互结合，相互引用。
图1至图5为本申请实施例提供的温度调控系统的结构示意图，下面对本实施例的温度调控系统进行具体说明。
参考图1，温度调控系统，应用于曝光机台。
具体地，曝光机台用于测量晶圆的套准精度(OVL)，在曝光机台测量晶圆的套准精度的过程中，晶圆首先被运送到承载台上，承载台包括中心载台103和多个边缘载台102，多个边缘载台102围绕中心载台103设置，中心载台103用于承载晶圆并携带晶圆转动，晶圆在转动的过程中，预对准装置104用于获取晶圆的偏心率，通过偏心率获取晶圆放置在承载台上的位置，并通过晶圆的偏心率对后续晶圆放置在承载台上的位置进行校正。
在一个例子中，预对准装置104包括边缘传感器；在中心载台103承载晶圆转动的过程中，边缘传感器用于获取晶圆边缘的位置与边缘传感器之间的距离，从而获取晶圆转动角度和晶圆边缘的位置与边缘传感器之间的距离的曲线图，根据曲线图中晶圆边缘的位置与边缘传感器之间的距离的最大距离和最小距离对应的晶圆转动角度，获取晶圆放置在承载台上的偏移距离和偏移角度，即获取晶圆的偏心率。
承载台包括中心载台103，中心载台103用于承载晶圆并携带晶圆转动。在一个例子中，参考图2，中心载台103包括第一支撑台113、第一气孔123、 第二支撑台133和第二气孔143。其中，第一支撑台113高于第二支撑台133，用于承载晶圆；当中心载台103承载晶圆时，第一支撑台113、第二支撑台133和晶圆的底部表面构成密闭空间，第一气孔123和第二气孔143用于抽取密闭空间中的气体或先密闭空间中通入气体；具体地，当晶圆放置在中心载台103上时，通过第一气孔123和第二气孔143抽取密闭空间中的部分气体，密闭空间与外部环境形成压强差，在大气压的作用下将晶圆固定在中心载台103上；当需要取走晶圆时，通过第一气孔123和第二气孔143向密闭空间中补充气体，从而恢复密闭空间与外部环境形成的压强差，从而将晶圆取走。
需要说明是的，抽取密闭空间中气体的量根据实际应用过程中密闭空间的大小确定，目的是通过大气压将晶圆固定在中心载台103上，本实施例并不对通过第一气孔123和第二气孔143抽取密闭空间中的气体的量进行限定。
还需要说明的是，附图2中的第二气孔143的数量为三个，为对第二气孔143数量的举例说明；在具体应用，可以根据气体的抽取速度设置气孔143的数量，例如2个、4个、5个等，气孔143设置的数量越多，通过气孔143抽取密闭空间中气体的速率越快。
继续参考图1，承载台还包括多个边缘载台102，每个边缘载台102都连接至少一个温控模块(未图示)，用于调节承载台上晶圆对应区域的温度。
具体地，边缘载台102可以分布在曝光机台表面的任意位置。在本实施例中，多个边缘载台102围绕中心载台103环绕设置，围绕中心载台103环绕设置的边缘载台102形成以承载台为中心的多个同心环，参考图1，本实施例中以同心环为3个进行举例说明，靠近中心载台103的同心环为内环，远离中心载台103的同心环为外环，内环与外环之间的同心环为次外环。环绕形成同 心环的分布方式设置边缘载台102，边缘载台102的排布紧密，以增加边缘载台102连接的温控模块对晶圆进行温度调控的位点。
参考图3和图4，在本实施例中，边缘载台102包括支撑部件。
支撑部件内具有气体流通区域142；在一个例子中，参考图3，支撑部件包括：边缘支撑部122、第一支撑部112和多个分立的第二支撑部132，其中边缘支撑部122环绕第一支撑部112设置，且边缘支撑部122与第一支撑部112之间存在空隙，第二支撑部132位于空隙中，且边缘支撑部122、第一支撑部112与第二支撑部132之间围成气体流通区域142。
与边缘载台102连接的温控模块用于向气体流通区域142中通入预设温度的气体。其中，预设温度为调整晶圆温度的目标温度。在本实施例中，预设温度为22.5℃，因为曝光机台在对晶圆进行曝光时，晶圆的最佳温度为22.5℃。在其他实施例中，预设温度可以为接近曝光最佳温度的一个温度范围，例如20℃～25℃。
在一个例子中，参考图4，支撑部件还包括：与气体流通区域相连通的抽气孔162以及进气孔152，抽气孔162用于抽出气体流通区域142内的气体，进气孔152用于向气体流通区域142中通入预设温度的气体。具体地，进气孔152连接进气管道105，进气管道105用于向进气孔152提供气体，进气管道105上设置有温控模块106，用于加热气体至预设温度。
需要说明的是，附图3和附图4中的进气孔152的数量为三个，为对进气孔152数量的举例说明；在具体应用，可以根据气体的抽取速度设置进气孔152的数量，例如2个、4个、5个等，进气孔152设置的数量越多，通过进气孔152抽取气体流通区域142中气体的速率越快，且通过温控模块106进行温 度调控的效果更加均匀。
在本实施例中，位于不同半径的同心环中的边缘载台102连接的温控模块106的温度调节速率不同，随着同心环的半径增大(依次为内环、次外环和外环)，边缘载台102连接的温控模块106温度调节的速率减缓。在一个例子中，通过预设温度气体的循环速率来控制温度调节的速率，具体地，内环的注气流量为145000Pa、内环的抽气流量为22000Pa；次外环的注气流量为145000Pa、次外环的抽气流量为21850Pa；外环的注气流量为145000Pa、外环的抽泣流量为21700Pa。
需要说明的是，上述对各同心环抽气流量和注气流量的值仅为举例说明，目的在于体现本实施例中不同半径的同心环中，边缘载台102连接的温控模块106温度调节的速率不同，并不构成对本申请实施例的限定。另外，本实施例对气体的循环速率的改变通过固定注气流量改变抽气流量的方式实现，在其他实施例中还可以通过固定抽气流量改变注气流量的方式实现，或者注气流量和抽气流量同时改变的方式进行实现。
温度调控系统还包括：参数获取模块以及处理模块。
参数获取模块用于获取中心载台103上的晶圆的温度，处理模块用于基于温度，获取晶圆的温度异常区域，并调节承载台上与温度异常区域对应的边缘载台102连接的温控模块106的温度，通过改变温控模块106的温度间接调控温度异常区域的晶圆的温度。
具体地，参数获取模块包括间隔设置的多个温度传感器或者红外温度传感器，用于获取承载台上的晶圆多个位置的温度。即参数获取模块可以通过以下两种方式进行实现：
方式一：参数获取模块为红外温度传感器。通过红外温度传感器获取承载台上晶圆的温度，由于红外温度传感器的热敏感特征，可以直接获取晶圆的温度分布图。
方式二：参数获取模块为间隔设置的多个温度传感器。多个温度传感器用于获取位于承载台上的晶圆的多个位置的温度。此时处理模块还包括处理子模块，用于基于获取的晶圆多个位置的温度，获取晶圆的温度分布图。通过获取晶圆分布图的方式可以准确获取晶圆的具体温度分布，可以更加准确的获取晶圆的温度异常区域。
另外，参考图5，在本实施例中，温度调控系统还包括：恒温管道107，恒温管道107种通有恒温液或恒温气体，用于定向改变位于承载台上承载台的晶圆的温度，晶圆的温度向恒温液或恒温气体的方向改变。具体地，在一个例子中，恒温管道107位于多个边缘载台之间的间隙中，即恒温管道107围绕边缘载台设置，极大的覆盖了承载台上的晶圆的面积，对晶圆整体的温度调控效果更好。其中，恒温液或恒温气体的温度范围为20℃～25℃，例如，21℃、22℃、23℃和24℃。在本实施例中，恒温液或恒温气体的温度为22.5℃，因为曝光机台在对晶圆进行曝光时，晶圆的最佳温度为22.5℃，将晶圆整体的温度向22.5℃的方向改变，使得晶圆在曝光时处于最佳温度，提高后续进行晶圆曝光的效率。
与相关技术相比，通过参数获取模块获取承载台上的晶圆的温度，以获取晶圆的温度异常区域，即获取晶圆存在温度较高的具体位置或者温度较低的具体位置；然后处理模块基于温度异常区域位置，获取对应的温控模块；通过温控模块调节晶圆的温度异常区域的温度，实现对晶圆具体位置的温度的精确调控，从而保证晶圆的温度均匀分布。
值得一提的是，本实施例中所涉及到的各单元均为逻辑单元，在实际应用中，一个逻辑单元可以是一个物理单元，也可以是一个物理单元的一部分，还可以以多个物理单元的组合实现。此外，为了突出本申请的创新部分，本实施例中并没有将与解决本申请所提出的技术问题关系不太密切的单元引入，但这并不表明本实施例中不存在其它的单元。
本申请另一实施例涉及一种温度调控方法。
温度调控方法，应用于上述温度调控系统，包括：获取承载台上晶圆的温度；基于晶圆的温度，获取晶圆需要进行温度调整的区域；获取与晶圆需要进行温度调整的区域对应的边缘载台；通过边缘载台连接的温控模块对晶圆需要进行温度调整的区域进行温度调整。
参考图6，以下将结合附图对本实施例提供的温度调控方法进行详细说明，与上述一实施例相同或相应的部分，以下将不做详细赘述。
步骤201，获取参数获取模块测量的晶圆的温度。
在本实施例中，还包括：步骤202，获取晶圆的温度分布图。
具体地，通过参数获取模块测量的晶圆的温度，参数获取模块包括间隔设置的多个温度传感器或者红外温度传感器，用于获取承载台上的晶圆多个位置的温度。即参数获取模块可以通过以下两种方式进行实现：
方式一：参数获取模块为红外温度传感器。通过红外温度传感器获取承载台上晶圆的温度，由于红外温度传感器的热敏感特征，可以直接获取晶圆的温度分布图。
方式二：参数获取模块为间隔设置的多个温度传感器。多个温度传感器用于获取位于承载台上的晶圆的多个位置的温度。此时处理模块还包括处理子 模块，用于基于获取的晶圆多个位置的温度，获取晶圆的温度分布图。
步骤203，获取晶圆需要进行温度调整的区域。
本实施例通过获取晶圆分布图的方式可以准确获取晶圆的具体温度分布，可以更加准确的获取晶圆的温度异常区域。在其他实施例中也可以通过步骤201直接进入步骤203，即通过参数获取模块获取的晶圆温度直接获取晶圆需要进行温度调整的区域。
步骤204，获取与晶圆需要进行温度调整的区域对应的边缘载台。
步骤205，通过边缘载台连接的温控模块对晶圆进行温度调整。
具体地，处理模块用于基于温度分布图，获取晶圆的温度异常区域，即晶圆需要进行温度调整的区域，并且根据晶圆需要进行温度调整的区域获取与该区域对应的温控模块，调节承载台上与温度异常区域对应的温控模块的温度，通过改变温控模块的温度间接调控温度异常区域的晶圆的温度。
在一个例子中，边缘载台包括支撑部件。支撑部件内具有气体流通区域，与边缘载台连接的温控模块用于向气体流通区域中通入预设温度的气体。其中，预设温度为调整晶圆温度的目标温度。在本实施例中，预设温度为22.5℃，因为曝光机台在对晶圆进行曝光时，晶圆的最佳温度为22.5℃。在其他实施例中，预设温度可以为接近曝光最佳温度的一个温度范围，例如20℃～25℃。
具体地，支撑部件包括：与气体流通区域相连通的抽气孔以及进气孔，抽气孔用于抽出气体流通区域内的气体，进气孔用于向气体流通区域中通入预设温度的气体。具体地，进气孔连接进气管道，进气管道用于向进气孔提供气体，进气管道上设置有温控模块，用于加热气体至预设温度。
在本实施例中，位于不同半径的同心环中的边缘载台连接的温控模块的 温度调节速率不同，随着同心环的半径增大(依次为内环、次外环和外环)，温控模块温度调节的速率减缓。
具体地，随着同心环半径的增大，温控模块温度调节的速率减缓，包括：位于不同半径的同心环中的边缘载台连接的温控模块的注气流量相同、抽气流量不同，且随着同心环半径的增大，温控模块的抽气流量减小。在一个例子中，通过预设温度气体的循环速率来控制温度调节的速率，同心环包括内环、次外环和外环；其中，内环的注气流量为145000Pa、内环的抽气流量为22000Pa；次外环的注气流量为145000Pa、次外环的抽气流量为21850Pa；外环的注气流量为145000Pa、外环的抽泣流量为21700Pa。
步骤205执行完毕后，即完成了一轮对承载台上晶圆的温度调控，继续执行步骤202，直至晶圆不存在温度异常区域。
需要说明的是在对上述方式的执行过程中还包括：通过恒温液或恒温气体调整承载台上晶圆的温度于预设温度。
具体地，通过预设温度的恒温液或恒温气体，将承载台上的晶圆的温度向靠近预设温度的方向进行改变。在一个例子中，预设温度的温度范围为20℃～25℃，例如，21℃、22℃、23℃和24℃。在本实施例中，预设温度为22.5℃，因为曝光机台在对晶圆进行曝光时，晶圆的最佳温度为22.5℃，将晶圆整体的温度向22.5℃的方向改变，使得晶圆在曝光时处于最佳温度，提高后续进行晶圆曝光的效率。
相比于相关技术而言，通过获取承载台上的晶圆的温度，以获取晶圆的温度异常区域，即获取晶圆存在温度较高的具体位置或者温度较低的具体位置；然后基于晶圆的温度，获取与晶圆的温度异常区域位置对应的边缘载台；通过 边缘载台连接的温控模块调节晶圆的温度异常区域的温度，实现对晶圆具体位置的温度的精确调控，从而保证晶圆的温度均匀分布。
由于上述实施例与本实施例相互对应，因此本实施例可与上述实施例互相配合实施。上述实施例中提到的相关技术细节在本实施例中依然有效，在上述实施例中所能达到的技术效果在本实施例中也同样可以实现，为了减少重复，这里不再赘述。相应地，本实施例中提到的相关技术细节也可应用在上述实施例中。
上面各种步骤划分，只是为了描述清楚，实现时可以合并为一个步骤或者对某些步骤进行拆分，分解为多个步骤，只要包括相同的逻辑关系，都在本专利的保护范围内；对流程中添加无关紧要的修改或者引入无关紧要的设计，但不改变其流程的核心设计都在该专利的保护范围内。
本领域的普通技术人员可以理解，上述各实施例是实现本申请的具体实施例，而在实际应用中，可以在形式上和细节上对其作各种改变，而不偏离本申请的精神和范围。

Claims (16)

  1. 一种温度调控系统，应用于曝光机台，其特征在于，包括：
    承载台，用于承载晶圆，所述承载台包括中心载台以及多个边缘载台，多个所述边缘载台围绕所述中心载台设置；
    多个温控模块，每个所述温控模块都连接一个所述边缘载台，所述温控模块用于调节所述边缘载台上晶圆对应区域的温度；
    参数获取模块，用于获取所述承载台上的所述晶圆的温度；
    处理模块，基于所述晶圆的温度，获取所述晶圆的温度异常区域，并调节与所述温度异常区域对应的所述温控模块的温度。
  2. 根据权利要求1所述的温度调控系统，其特征在于，所述边缘载台包括：支撑部件，所述支撑部件内具有气体流通区域；
    所述温控模块基于所述处理模块发送的信号，向所述气体流通区域中通入预设温度的气体。
  3. 根据权利要求2所述的温度调控系统，其特征在于，所述支撑部件包括：
    与所述气体流通区域相连通的抽气孔以及进气孔；
    所述抽气孔用于抽出所述气体流通区域内的气体；
    所述进气孔用于向所述气体流通区域通入预设温度的气体。
  4. 根据权利要求2所述的温度调控系统，其特征在于，所述支撑部件包括：
    边缘支撑部、第一支撑部和多个分立的第二支撑部；
    所述边缘支撑部环绕所述第一支撑部设置，且所述边缘支撑部与所述第一支撑部之间存在空隙；
    所述第二支撑部位于所述空隙中，且所述边缘支撑部、所述第一支撑部与 所述第二支撑部之间围成所述气体流通区域。
  5. 根据权利要求1所述的温度调控系统，其特征在于，围绕所述中心载台环绕设置的边缘载台形成以所述中心载台为中心的多个同心环。
  6. 根据权利要求5所述的温度调控系统，其特征在于，位于不同半径的同心环中的所述边缘载台连接的所述温控模块的温度调节速率不同，随着同心环半径的增大，所述温控模块温度调节的速率减缓。
  7. 根据权利要求1所述的温度调控系统，其特征在于，还包括：恒温管道，所述恒温管道中通有恒温液或恒温气体。
  8. 根据权利要求7所述的温度调控系统，其特征在于，所述恒温管道位于多个所述边缘载台之间的间隙中。
  9. 根据权利要求7所述的温度调控系统，其特征在于，所述恒温液或恒温气体的温度范围为20℃～25℃。
  10. 根据权利要求1所述的温度调控系统，其特征在于，所述参数获取模块包括间隔设置的多个温度传感器或者红外温度传感器，用于获取所述承载台上的所述晶圆多个位置的温度；
    处理子模块，基于获取的所述晶圆多个位置的温度，获取所述晶圆的温度分布图。
  11. 一种温度调控方法，应用于权利要求1中任一项所述的温度调控系统，其特征在于，包括：
    获取承载台上晶圆的温度；
    基于所述晶圆的温度，获取所述晶圆需要进行温度调整的区域；
    获取与所述晶圆需要进行温度调整的区域对应的边缘载台；
    通过所述边缘载台连接的温控模块对所述晶圆需要进行温度调整的区域进行温度调整。
  12. 根据权利要求11所述的温度调控方法，其特征在于，基于所述晶圆的温度，获取所述晶圆需要进行温度调整的区域，包括：
    基于所述晶圆多个位置的温度，获取所述晶圆的温度分布图；
    基于所述晶圆的温度分布图，获取所述晶圆需要进行温度调整的区域。
  13. 根据权利要求11所述的温度调控方法，其特征在于，还包括：通过恒温液或恒温气体调整承载台上晶圆的温度于预设温度。
  14. 根据权利要求13所述的温度调控方法，其特征在于，所述预设温度的温度范围为20℃～25℃。
  15. 根据权利要求11所述的温度调控方法，其特征在于，位于不同半径的同心环中的所述边缘载台连接的所述温控模块的温度调节速率不同，随着同心环半径的增大，所述温控模块温度调节的速率减缓。
  16. 根据权利要求15所述的温度调控方法，其特征在于，所述随着同心环半径的增大，所述温控模块温度调节的速率减缓，包括：位于不同半径的同心环中的所述温控模块的注气流量相同、抽气流量不同，且随着同心环半径的增大，所述温控模块的抽气流量减小。
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