WO2022004564A1 - Light-emitting device and illumination device - Google Patents

Light-emitting device and illumination device Download PDF

Info

Publication number
WO2022004564A1
WO2022004564A1 PCT/JP2021/024035 JP2021024035W WO2022004564A1 WO 2022004564 A1 WO2022004564 A1 WO 2022004564A1 JP 2021024035 W JP2021024035 W JP 2021024035W WO 2022004564 A1 WO2022004564 A1 WO 2022004564A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
emitting device
resin sheet
light
Prior art date
Application number
PCT/JP2021/024035
Other languages
French (fr)
Japanese (ja)
Inventor
秀崇 加藤
民男 草野
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Publication of WO2022004564A1 publication Critical patent/WO2022004564A1/en

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/38—Combination of two or more photoluminescent elements of different materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Definitions

  • This disclosure relates to a light emitting device and a lighting device.
  • a light emitting device having a double structure in which a phosphor-containing film piece is adhered on a light extraction surface of a semiconductor light emitting device is known (see, for example, Patent Document 1).
  • the light emitting device includes a substrate having a first upper surface, a light emitting element having a second upper surface and located on the first upper surface, and a wavelength conversion member. At least a part of the wavelength conversion member is in contact with the second upper surface of the light emitting element.
  • the lighting device includes a light emitting device.
  • the light emitting device includes a substrate having a first upper surface, a light emitting element having a second upper surface and located on the first upper surface, and a wavelength conversion member. At least a part of the wavelength conversion member is in contact with the second upper surface of the light emitting element.
  • FIG. 1 is a cross-sectional view taken along the line AA of FIG. It is an enlarged view of the circled portion X of FIG. It is sectional drawing which shows the structural example of the light emitting device which concerns on a comparative example. It is a figure which shows an example of the temperature distribution of the light emitting device which concerns on this embodiment. It is a figure which shows the temperature distribution of the light emitting device which concerns on a comparative example.
  • the light emitting device 10 includes a light emitting element 3 and a wavelength conversion member 6.
  • the light emitting device 10 emits light obtained by converting the light emitted by the light emitting element 3 by the wavelength conversion member 6.
  • the light emitting element 3 emits light having a peak wavelength in a wavelength region of 360 nm or more and 430 nm or less.
  • the wavelength region of 360 nm or more and 430 nm or less is also referred to as a purple light region.
  • the wavelength conversion member 6 converts the light incident on the wavelength conversion member 6 from the light emitting element 3 into light having a peak wavelength in the wavelength region of 360 nm or more and 780 nm or less, and emits the converted light.
  • the wavelength region of 360 nm or more and 950 nm or less is also referred to as a visible light region.
  • the visible light region is assumed to include a purple light region.
  • Visible light is assumed to include purple light.
  • the wavelength conversion member 6 emits a peak wavelength region into a visible light region by being excited by the light emitted by the light emitting element 3.
  • the light emitted by the light emitting element 3 is also referred to as excitation light.
  • the light emitting element 3 included in the light emitting device 10 is also referred to as an excitation light emitting element.
  • the light emitting device 10 may have a plurality of wavelength conversion members 6.
  • the plurality of wavelength conversion members 6 may emit light having different peak wavelengths.
  • the light emitting device 10 can emit light having various spectra by controlling the intensity of the light emitted by each wavelength conversion member 6.
  • the light emitting device 10 is not essential, but further includes an element substrate 2, a frame body 4, and a filling member 5. Hereinafter, each configuration of the light emitting device 10 will be described.
  • the element substrate 2 is also simply referred to as a substrate.
  • the element substrate 2 may be formed of, for example, a material having an insulating property.
  • the element substrate 2 may be formed of, for example, a ceramic material such as aluminum oxide (alumina) or mullite, a glass ceramic material, or a composite material obtained by mixing a plurality of these materials.
  • the element substrate 2 may be formed of a polymer resin material or the like in which metal oxide fine particles capable of adjusting thermal expansion are dispersed.
  • the element substrate 2 may be configured to contain aluminum nitride or silicon carbide (silicon carbide). As a result, the thermal conductivity of the element substrate 2 can be improved, and the heat dissipation performance of the light emitting device 10 is improved.
  • the element substrate 2 has an upper surface 2A facing the positive direction of the Z axis.
  • the upper surface 2A is also referred to as a first upper surface.
  • the light emitting element 3 is mounted on the upper surface 2A of the element substrate 2.
  • the element substrate 2 may include a wiring conductor for electrically conducting a component such as a light emitting element 3 on the upper surface 2A or inside.
  • the wiring conductor may be made of a conductive material such as tungsten, molybdenum, manganese, or copper.
  • the wiring conductor is formed, for example, by printing a metal paste obtained by adding an organic solvent to tungsten powder on a ceramic green sheet to be an element substrate 2 in a predetermined pattern, laminating a plurality of ceramic green sheets, and firing them. May be done.
  • a plating layer such as nickel or gold may be formed on the surface of the wiring conductor to prevent oxidation.
  • the element substrate 2 may be provided with a metal reflective layer at a distance from the wiring conductor or the plating layer in order to efficiently emit the light emitted by the light emitting element 3 to the outside.
  • the metal reflective layer may be made of a metal material such as aluminum, silver, gold, copper or platinum.
  • the light emitting element 3 is an LED (Light Emitting Diode).
  • the LED emits light to the outside by recombination of electrons and holes in a PN junction in which a P-type semiconductor and an N-type semiconductor are bonded.
  • the light emitting element 3 is not limited to the LED, and may be another light emitting device.
  • the light emitting element 3 is mounted on the upper surface 2A of the element substrate 2.
  • the light emitting element 3 is electrically connected to the plating layer adhered to the surface of the wiring conductor provided on the element substrate 2 via, for example, a brazing material or solder.
  • the number of light emitting elements 3 mounted on the upper surface 2A of the element substrate 2 is one in FIG. 2, but is not particularly limited, and may be two or more.
  • the light emitting element 3 is located inside the frame body 4. When the number of light emitting elements 3 is two or more, the light emitting elements 3 are positioned so as not to overlap each other in the plan view of the upper surface 2A.
  • the light emitting element 3 has an upper surface 3A facing the positive direction of the Z axis.
  • the upper surface 3A is also referred to as a second upper surface.
  • the light emitting element 3 emits excitation light from at least a part of the upper surface 3A.
  • the light emitting element 3 has a side surface 3B that faces in a direction intersecting the Z axis, for example, in the positive and negative directions of the Y axis in the cross-sectional view of FIG.
  • the light emitting element 3 may also emit excitation light from at least a part of the side surface 3B.
  • the light emitting element 3 may include a translucent substrate and an optical semiconductor layer formed on the translucent substrate.
  • the translucent substrate contains a material on which an optical semiconductor layer can be grown by using, for example, a chemical vapor deposition method such as an organic metal vapor phase growth method or a molecular beam epitaxial growth method.
  • the translucent substrate may be formed of, for example, sapphire, gallium nitride, aluminum nitride, zinc oxide, zinc selenium, silicon carbide (silicon carbide), silicon (Si), zirconium dibodium or the like.
  • the thickness of the translucent substrate may be, for example, 50 ⁇ m or more and 1000 ⁇ m or less.
  • the optical semiconductor layer may include a first semiconductor layer formed on a translucent substrate, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer.
  • the first semiconductor layer, the light emitting layer, and the second semiconductor layer are, for example, a group III nitride semiconductor, a group III-V semiconductor such as gallium phosphorus or gallium arsenide, or a group III such as gallium nitride, aluminum nitride or indium nitride. It may be formed of a nitride semiconductor or the like.
  • the thickness of the first semiconductor layer may be, for example, 1 ⁇ m or more and 5 ⁇ m or less.
  • the thickness of the light emitting layer may be, for example, 25 nm or more and 150 nm or less.
  • the thickness of the second semiconductor layer may be, for example, 50 nm or more and 600 nm or less.
  • the frame 4 may be made of a ceramic material such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide.
  • the frame 4 may be made of a porous material.
  • the frame 4 may be formed of a resin material mixed with a powder containing a metal oxide such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide.
  • the frame body 4 is not limited to these materials, and may be formed of various materials.
  • the frame body 4 is connected to the upper surface 2A of the element substrate 2 via, for example, a resin, a brazing material, a solder, or the like.
  • the frame 4 is provided on the upper surface 2A of the element substrate 2 so as to surround the light emitting element 3 at a distance from the light emitting element 3.
  • the inner wall surface functions as a reflecting surface that reflects the light emitted by the light emitting element 3.
  • the inner wall surface may include, for example, a metal layer formed of a metal material such as tungsten, molybdenum, or manganese, and a plating layer covering the metal layer and formed of a metal material such as nickel or gold. The plating layer reflects the light emitted by the light emitting element 3.
  • the shape of the inner wall surface of the frame body 4 may be circular in a plan view. Since the shape of the inner wall surface is circular, the frame body 4 can reflect the light emitted by the light emitting element 3 substantially uniformly toward the outside.
  • the filling member 5 is filled in the space between the side surface 3B of the light emitting element 3 and the inner wall surface of the frame 4 on the upper surface 2A of the element substrate 2.
  • the filling member 5 may be filled so that its upper surface is flush with the upper surface 3A of the light emitting element 3.
  • the filling member 5 seals the light emitting element 3 together with the wavelength conversion member 6.
  • the filling member 5 transmits the light emitted from the light emitting element 3 or the light reflected by the upper surface 2A of the element substrate 2 or the inner wall surface of the frame body 4.
  • the filling member 5 may be made of, for example, a light-transmitting material.
  • the filling member 5 may be made of, for example, a light-transmitting insulating resin material such as a silicone resin, an acrylic resin, or an epoxy resin, or a light-transmitting glass material.
  • the refractive index of the filling member 5 may be set to, for example, 1.4 or more and 1.6 or less.
  • the wavelength conversion member 6 has a lower surface 6A facing the negative direction of the Z axis.
  • the wavelength conversion member 6 is adhered to the upper surface 3A of the light emitting element 3 on the lower surface 6A.
  • the phosphor converts purple light as excitation light incident on the wavelength conversion member 6 into light having a peak wavelength included in a wavelength region of 360 nm to 780 nm, and emits the converted light.
  • the wavelength conversion member 6 includes a translucent member 60 having translucency, a first phosphor 61, a second phosphor 62, a third phosphor 63, a fourth phosphor 64, and a first phosphor.
  • 5 Fluorescent material 65 may be provided.
  • the translucent member 60 may be formed of, for example, a translucent insulating resin such as a fluororesin, a silicone resin, an acrylic resin or an epoxy resin, or a translucent glass material.
  • the translucent member 60 forms the lower surface 6A of the wavelength conversion member 6 and directly adheres to the upper surface 3A of the light emitting element 3.
  • the translucent member 60 contains a resin having adhesiveness to the light emitting element 3.
  • the translucent member 60 is configured as a resin sheet.
  • the first fluorescent substance 61, the second fluorescent substance 62, the third fluorescent substance 63, the fourth fluorescent substance 64, and the fifth fluorescent substance 65 are also simply referred to as phosphors. It is assumed that the phosphor is contained inside the translucent member 60. The phosphor may be dispersed substantially uniformly inside the translucent member 60. The phosphor converts the incident purple light into light having various peak wavelengths.
  • the first phosphor 61 may convert violet light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 400 nm to 500 nm, that is, blue light.
  • the first phosphor 61 is, for example, BaMgAl 10 O 17 : Eu, or (Sr, Ca, Ba) 10 (PO 4 ) 6 Cl 2 : Eu, (Sr, Ba) 10 (PO 4 ) 6 Cl 2 : Eu. Etc. can be used.
  • the second phosphor 62 may convert the purple light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 450 nm to 550 nm, that is, blue-green light.
  • the second phosphor 62 for example, (Sr, Ba, Ca) 5 (PO 4 ) 3 Cl: Eu, Sr 4 Al 14 O 25 : Eu and the like can be used.
  • the third phosphor 63 may convert the violet light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 500 nm to 600 nm, that is, green light.
  • the third phosphor 63 is, for example, SrSi 2 (O, Cl) 2 N 2 : Eu, (Sr, Ba, Mg) 2 SiO 4 : Eu 2+ , or ZnS: Cu, Al, Zn 2 SiO 4 : Mn. Etc. can be used.
  • the fourth fluorophore 64 may convert the violet light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 600 nm to 700 nm, that is, red light.
  • the fourth phosphor 64 for example, Y 2 O 2 S: Eu, Y 2 O 3 : Eu, SrCaClAlSiN 3 : Eu 2+ , CaAlSiN 3 : Eu, CaAlSi (ON) 3 : Eu, or the like can be used. ..
  • the fifth phosphor 65 may convert the violet light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 680 nm to 800 nm, that is, near infrared light. Near-infrared light may include light in the wavelength range from 680 to 2500 nm.
  • the fifth phosphor 65 for example, 3Ga 5 O 12 : Cr or the like can be used.
  • the combination of types of phosphors contained in the wavelength conversion member 6 is not particularly limited.
  • the wavelength conversion member 6 may include at least one kind of phosphor of the first phosphor 61, the second phosphor 62, the third phosphor 63, the fourth phosphor 64 and the fifth phosphor 65.
  • the wavelength conversion member 6 is not limited to the first phosphor 61, the second phosphor 62, the third phosphor 63, the fourth phosphor 64 and the fifth phosphor 65, and may have other types of phosphors. good.
  • the wavelength conversion member 6 is positioned so that the purple light emitted from the light emitting element 3 is incident.
  • the wavelength conversion member 6 is located along the upper surface 3A of the light emitting element 3. The arrangement of the wavelength conversion member 6 is not limited to this example, and may be in various other forms.
  • the purple light incident on the wavelength conversion member 6 from the light emitting element 3 is converted into light having a different peak wavelength depending on the phosphor.
  • the peak wavelength of the converted light may be included in the visible light region.
  • the light converted by the combination of the phosphors contained in the wavelength conversion member 6 may have a plurality of peak wavelengths. For example, when one wavelength conversion member 6 contains a phosphor that emits blue fluorescence, a phosphor that emits bluish green fluorescence, and a phosphor that emits green fluorescence, the converted light is blue, blue. It has each of green and green wavelengths as peak wavelengths. When one wavelength conversion member 6 contains only one kind of phosphor, the converted light has the peak wavelength of the phosphor.
  • One wavelength conversion member 6 is not limited to these examples, and may contain a fluorescent substance in various combinations.
  • the color of the light emitted from the wavelength conversion member 6 is determined based on the type of the phosphor contained in the wavelength conversion member 6. That is, the converted light can have various spectra.
  • the light emitting device 10 can emit light having various spectra depending on the combination of phosphors contained in the wavelength conversion member 6.
  • the light emitting device 10 emits, for example, a spectrum of direct sunlight from the sun, a spectrum of sunlight reaching a predetermined depth in the sea, a spectrum of light emitted by a candle flame, a spectrum of light of a firefly, or the like. can.
  • the light emitting device 10 can emit light having various colors.
  • the light emitting device 10 can emit light having various color temperatures.
  • the wavelength conversion member 6 is directly adhered to the upper surface 3A of the light emitting element 3 on the lower surface 6A.
  • the heat generated by the wavelength conversion member 6 can be directly diffused to the light emitting element 3 and diffused to the element substrate 2 through the light emitting element 3.
  • FIG. 4 shows a light emitting device 90 according to a comparative example.
  • the light emitting device 90 includes an element substrate 2, a light emitting element 3, a frame body 4, a filling member 5, and a wavelength conversion member 6.
  • the light emitting device 90 according to the comparative example is different from the light emitting device 10 according to the present embodiment in that the filling member 5 is located between the upper surface 3A of the light emitting element 3 and the lower surface 6A of the wavelength conversion member 6.
  • the thermal conductivity of the light emitting element 3 is higher than the thermal conductivity of the filling member 5.
  • the heat generated in the wavelength conversion member 6 diffuses to the element substrate 2 via the filling member 5.
  • the heat generated by the wavelength conversion member 6 diffuses to the element substrate 2 via the light emitting element 3. Due to the difference in thermal conductivity, the heat generated in the wavelength conversion member 6 is more likely to diffuse to the element substrate 2 in the light emitting device 10 according to the present embodiment than in the light emitting device 90 according to the comparative example.
  • the distance from the wavelength conversion member 6 to the element substrate 2 in the light emitting device 10 according to the present embodiment is shorter than the distance from the wavelength conversion member 6 to the element substrate 2 in the light emitting device 90 according to the comparative example. Even if the distance to the element substrate 2 is different, the heat generated by the wavelength conversion member 6 is more likely to diffuse to the element substrate 2 in the light emitting device 10 according to the present embodiment than in the light emitting device 90 according to the comparative example.
  • the light emitting device 10 according to the present embodiment is more likely to dissipate the heat generated by the wavelength conversion member 6 than the light emitting device 90 according to the comparative example.
  • the temperature of the wavelength conversion member 6 in the light emitting device 10 according to the present embodiment is lower than the temperature of the wavelength conversion member 6 in the light emitting device 90 according to the comparative example.
  • the temperature distribution when the light emitting element 3 emits excitation light is calculated by simulation. Was done. The simulation conditions and results are described with reference to Table 1 below.
  • the simulation conditions include the presence or absence of the filling member 5 between the light emitting element 3 and the wavelength conversion member 6.
  • the presence or absence of the filling member 5 between the light emitting element 3 and the wavelength conversion member 6 is specified by the description of each cell in the row of "filling member".
  • “none" is described in each cell in the row of "filling member”. That is, in the light emitting device 10 according to the present embodiment, the filling member 5 does not exist between the light emitting element 3 and the wavelength conversion member 6.
  • the simulation condition representing the light emitting device 90 according to the comparative example "Yes” is described in the cell in the row of "Filling member”. That is, in the light emitting device 90 according to the comparative example, the filling member 5 exists between the light emitting element 3 and the wavelength conversion member 6.
  • the simulation conditions include the presence / absence of the wavelength conversion member 6 on the side surface 3B of the light emitting element 3.
  • the presence or absence of the wavelength conversion member 6 on the side surface 3B of the light emitting element 3 is specified by the description of each cell in the row of the "side surface cover".
  • “None” is described in each cell of the "side cover” row.
  • the simulation condition of C "Yes” is described in the cell of the row of "Side cover”. That is, the wavelength conversion member 6 exists on the side surface 3B only under the condition of C.
  • the side surface 3B of the light emitting element 3 is covered with the filling member 5. Therefore, the wavelength conversion member 6 does not exist on the side surface 3B of the light emitting element 3 in the first place.
  • a "-" is written in the cell in the row of the "side cover”.
  • the simulation conditions include the presence or absence of an adhesive between the light emitting element 3 and the wavelength conversion member 6.
  • the presence or absence of an adhesive between the light emitting element 3 and the wavelength conversion member 6 is specified by the description of each cell in the "adhesive" row.
  • “None” is described in each cell of the "Adhesive” row.
  • “Yes” is described in the cell of the "Adhesive” row. That is, only under the condition D, there is an adhesive between the light emitting element 3 and the wavelength conversion member 6.
  • the filling member 5 exists between the light emitting element 3 and the wavelength conversion member 6. Therefore, there is no adhesive between the light emitting element 3 and the wavelength conversion member 6.
  • a "-" is written in the cell of the "Adhesive" row.
  • the simulation condition includes whether the arrangement form of the light emitting element 3 (chip) is a form in which only one large size is arranged or a form in which seven small sizes are arranged.
  • the arrangement form of the light emitting element 3 (chip) is specified by the description of each cell in the row of "chip form”. In the simulation conditions of A, C, and D, "small x 7" is described in each cell of the "chip form” row. In the simulation condition of B, “large x 1" is described in the cell of the row of "chip form”. That is, only under the condition B, the arrangement form of the light emitting element 3 (chip) is such that only one large size is arranged.
  • the light emitting element 3 (chip) is arranged in a form in which seven small sizes are arranged.
  • the light emitting element 3 (chip) is arranged in a form in which seven small sizes are arranged. Therefore, "small x 7" is described in the cell in the row of "chip form".
  • the light emitting device 10 is mounted on the mounting board 7. It is assumed that the element substrate 2 is in contact with the mounting substrate 7 at least a part of its lower surface (the surface opposite to the upper surface 2A). It is assumed that the mounting substrate 7 is Al + insulated under the conditions of A, B, C and D, that is, a substrate in which aluminum is insulated. It is assumed that the mounting substrate 7 is an LTCC (Low Temperature Co-fired Ceramics) substrate under the conditions of the comparative example.
  • Contact means that the objects are not necessarily fixed to each other with an adhesive or the like, but are at least in contact with each other. At this time, the objects may be fixed to each other with an adhesive or the like as long as they are a part of the objects.
  • FIG. 5 shows a simulation result of the temperature distribution of each component of the light emitting device 10 according to the present embodiment, which is calculated based on the simulation condition of A.
  • FIG. 6 shows a simulation result of the temperature distribution of each component of the light emitting device 90 according to the comparative example, which was calculated based on the simulation conditions of the comparative example.
  • the difference in shade of gray scale represents the difference in temperature. The darker the gray scale, the higher the temperature of that part.
  • the light emitting devices 10 and 90 have an axisymmetric configuration around the central axis. The light emitting devices 10 and 90 are represented so that the cross sections from two directions can be seen along the XZ plane and the YZ plane passing through the central axis.
  • the temperature of the wavelength conversion member 6 of the light emitting device 10 according to the present embodiment is lower than the temperature of the wavelength conversion member 6 of the light emitting device 90 according to the comparative example.
  • the temperature of the wavelength conversion member 6 calculated by the simulation is described in the cell in the row of "Fluorescent temperature" in Table 1.
  • the temperature of the wavelength conversion member 6 of the light emitting device 10 and the temperature of the wavelength conversion member 6 of the light emitting device 90 are 115.5 ° C. and 249.6 ° C., respectively.
  • the temperature of the light emitting element 3 of the light emitting device 10 according to the present embodiment is lower than the temperature of the light emitting element 3 of the light emitting device 90 according to the comparative example.
  • the temperature of the light emitting element 3 calculated by the simulation is described in the cell of the row of "chip temperature” in Table 1. Specifically, the temperature of the light emitting element 3 of the light emitting device 10 and the temperature of the light emitting element 3 of the light emitting device 90 are 61.0 ° C. and 176.7 ° C., respectively.
  • the absence of the filling member 5 between the light emitting element 3 and the wavelength conversion member 6 increases the amount of heat diffused from the wavelength conversion member 6 to the light emitting element 3, and the temperature of the light emitting device 10 according to the present embodiment is compared with the comparative example. Contributes to keeping the temperature lower than the temperature of the light emitting device 90 according to the above.
  • the temperature of the light emitting element 3 is further lower than the condition A. It is considered that this is because the arrangement form of the light emitting element 3 is such that only one large size is arranged.
  • the temperatures of the light emitting element 3 and the wavelength conversion member 6 are further lower than the condition A. It is considered that the position of the wavelength conversion member 6 on the side surface 3B of the light emitting element 3 increases the amount of heat diffused from the wavelength conversion member 6 to the element substrate 2 through the light emitting element 3.
  • the temperatures of the light emitting element 3 and the wavelength conversion member 6 are higher than the conditions A to C, but are suppressed to be lower than the conditions of the comparative example. This is because the amount of heat diffused from the wavelength conversion member 6 to the element substrate 2 through the light emitting element 3 is reduced from the conditions A to C by adhering the wavelength conversion member 6 to the light emitting element 3 with an adhesive. Conceivable.
  • the temperature of the light emitting device 10 according to the present embodiment can be suppressed to be lower than the temperature of the light emitting device 90 according to the comparative example. rice field.
  • the simulation results also revealed that the absence of the filling member 5 between the light emitting element 3 and the wavelength conversion member 6 greatly contributes to keeping the temperature of the light emitting device 10 low. Therefore, since there is no adhesive between the light emitting element 3 and the wavelength conversion member 6, the heat dissipation of the light emitting device 10 can be further improved.
  • FIG. 7 shows a specific example of the configuration corresponding to the condition C in which the wavelength conversion member 6 is located on the side surface 3B of the light emitting element 3.
  • the wavelength conversion member 6 configured as a resin sheet includes a first resin sheet 66 and a second resin sheet 67.
  • the first resin sheet 66 and the second resin sheet 67 are laminated.
  • the first resin sheet 66 is wider than the entire upper surface 3A of the light emitting element 3.
  • the first resin sheet 66 has a lower surface 6A, and is adhered to the upper surface 3A of the light emitting element 3 at the lower surface 6A.
  • the excitation light emitted from the upper surface 3A of the light emitting element 3 is incident on the first resin sheet 66. At least a part of the excitation light incident on the first resin sheet 66 is converted into light of another wavelength. The other part is converted into heat by the first resin sheet 66, and raises the temperature of the first resin sheet 66. At least a part of the heat generated in the first resin sheet 66 is diffused to the element substrate 2 through the light emitting element 3.
  • the second resin sheet 67 is positioned so as not to overlap the upper surface 3A of the light emitting element 3 in a plan view of the element substrate 2 when viewed from the positive direction of the Z axis.
  • the second resin sheet 67 has a lower surface 6B, and at least a part of the lower surface 6B is in contact with the upper surface 2A of the element substrate 2.
  • the second resin sheet 67 may be adhered to the upper surface 2A of the element substrate 2 on the lower surface 6B.
  • a part of the heat generated in the first resin sheet 66 diffuses into the second resin sheet 67 and diffuses into the element substrate 2 through the second resin sheet 67.
  • the heat generated by the first resin sheet 66 is likely to be diffused to the element substrate 2. As a result, the temperatures of the first resin sheet 66 and the other components of the light emitting device 10 are kept low.
  • the resin sheet constituting the wavelength conversion member 6 has a first region overlapping the light emitting element 3 and a second region not overlapping the light emitting element 3 in a plan view.
  • the first resin sheet 66 is located so as to straddle the first region and the second region.
  • the second resin sheet 67 is located in the second region. At least a part of the resin sheet located in the second region may be adhered to the element substrate 2. Since a part of the resin sheet is adhered to the element substrate 2, heat can be directly dissipated from the resin sheet to the element substrate 2, so that the heat dissipation of the light emitting device 10 is improved.
  • adheresion means a state in which objects are fixed to each other via an adhesive or the like.
  • the second resin sheet 67 may come into contact with at least a part of the side surface 3B of the light emitting element 3.
  • the second resin sheet 67 may be adhered to the side surface 3B of the light emitting element 3.
  • the excitation light is likely to be incident on the second resin sheet 67, and the second resin sheet 67 is also converted into light having another wavelength. As a result, the conversion efficiency of the excitation light can be increased.
  • the thickness of the first resin sheet 66 and the thickness of the second resin sheet 67 may both be the same or different.
  • the thickness of the second resin sheet 67 may be the same as or different from the thickness of the light emitting element 3.
  • the first resin sheet 66 and the second resin sheet 67 may be configured so as not to overlap each other.
  • the first resin sheet 66 may be configured in a shape located only in a range overlapping the light emitting element 3.
  • the second resin sheet 67 may be configured in a shape that is located only in a range that does not overlap with the light emitting element 3.
  • the thickness of the second resin sheet 67 is larger than the thickness of the light emitting element 3, the side surface of the first resin sheet 66 and the side surface of the second resin sheet 67 come into contact with each other, so that the light emitting element 3 is the first resin sheet. It is covered by the combined configuration of 66 and the second resin sheet 67.
  • FIG. 8 shows another example of the configuration in which the wavelength conversion member 6 is located on the side surface 3B of the light emitting element 3.
  • the wavelength conversion member 6 is configured as one third resin sheet 68.
  • the third resin sheet 68 covers at least a part of the upper surface 3A of the light emitting element 3 and the portion of the upper surface 2A of the element substrate 2 that does not overlap with the light emitting element 3 in a plan view.
  • the third resin sheet 68 has a lower surface 6A that overlaps with the light emitting element 3 in a plan view and a lower surface 6B that does not overlap with the light emitting element 3 in a plan view.
  • the third resin sheet 68 is adhered to the upper surface 3A of the light emitting element 3 on the lower surface 6A, and is adhered to the upper surface 2A of the element substrate 2 on the lower surface 6B. By doing so, even if the wavelength conversion member 6 has a simple configuration composed of one third resin sheet 68, in the light emitting device 10, the heat generated by the wavelength conversion member 6 is transferred to the element substrate 2. It can be configured to facilitate diffusion.
  • the third resin sheet 68 has both a first region that overlaps the light emitting element 3 and a second region that does not overlap the light emitting element 3 in a plan view.
  • the third resin sheet 68 has a first portion 681 corresponding to the first region and a second portion 682 corresponding to the second region. Further, the third resin sheet 68 may further have a third portion 683 located between the first portion 681 corresponding to the first region and the second portion 682 corresponding to the second region.
  • the third portion 683 is inclined so as to be lower toward the second portion 682 from the first portion 681 in the cross-sectional view of the light emitting device 10.
  • the third portion 683 is also referred to as an inclined region.
  • the cross-sectional view of the light emitting device 10 means that the cross section of the light emitting device 10 cut in the YZ plane is observed from the positive direction of the X axis.
  • the third resin sheet 68 may come into contact with at least a part of the side surface 3B of the light emitting element 3 in the third portion 683.
  • the third resin sheet 68 may be adhered to the side surface 3B of the light emitting element 3 in the third portion 683.
  • the wavelength conversion member 6 configured as a resin sheet is inclined so as to be lowered toward the upper surface that does not overlap with the light emitting element 3 in the plan view of the element substrate 2 as the distance from the portion overlapping with the light emitting element 3 increases. It may have an upper surface.
  • the inclined upper surface is represented as an inclined surface 6C.
  • the portion of the upper surface of the wavelength conversion member 6 that overlaps the light emitting element 3 in a plan view is also referred to as a third upper surface 6D.
  • the portion of the inclined surface 6C is also referred to as a fourth upper surface 6C.
  • the third upper surface 6D is located above the portion overlapping the light emitting element 3 in the plan view of the wavelength conversion member 6 configured as the resin sheet, and extends along the upper surface 3A of the light emitting element 3.
  • the fourth upper surface 6C intersects the third upper surface 6D and is inclined so as to be lower as the distance from the portion overlapping the light emitting element 3 increases. Further, it can be said that the end portion of the wavelength conversion member 6 is thinner than the center of the wavelength conversion member 6 in a plan view.
  • the wavelength conversion member 6 has the inclined surface 6C at the end, the light can be emitted at a wider angle as compared with the case where the inclined surface 6C is not provided. That is, the light distribution angle of the wavelength conversion member 6 becomes wide.
  • the lighting device 20 includes at least one light emitting device 10, and emits light emitted by the light emitting device 10 as illumination light.
  • the intensity of the light emitted by each light emitting device 10 may be controlled independently or may be controlled in association with each other.
  • the spectra of the light emitted by each light emitting device 10 may be the same or different from each other.
  • the lighting device 20 may control the spectrum of the combined light emitted by each light emitting device 10 by controlling the intensity of the light emitted by each light emitting device 10 in association with each other.
  • the light obtained by synthesizing the light emitted by each light emitting device 10 is also referred to as synthetic light.
  • the lighting device 20 may emit synthetic light as illumination light.
  • the lighting device 20 may select at least a part of the plurality of light emitting devices 10 to emit the lighting light.
  • the lighting device 20 may further include a mounting plate 25 on which the light emitting device 10 is mounted.
  • the lighting device 20 may further include a housing 26 having a groove-shaped portion for accommodating the mounting plate 25, and a pair of end plates 27 for closing the short side end portion of the housing 26.
  • the number of light emitting devices 10 mounted on the mounting plate 25 may be one or two or more.
  • the light emitting device 10 may be mounted on the mounting plate 25 so as to be lined up in a row, or may be mounted so as to be lined up in a grid pattern or a houndstooth pattern.
  • the light emitting device 10 is not limited to these patterns, and may be mounted on the mounting plate 25 in various arrangement patterns.
  • the mounting plate 25 may include a circuit board having a wiring pattern.
  • the circuit board may include, for example, a printed circuit board such as a rigid board, a flexible board, or a rigid flexible board.
  • the circuit board may include a drive circuit that controls the light emitting device 10.
  • the mounting plate 25 has a function of dissipating the heat generated by the light emitting device 10 to the outside.
  • the mounting plate 25 may be made of, for example, a metal material such as aluminum, copper or stainless steel, an organic resin material, or a composite material containing these.
  • the mounting plate 25 may have an elongated rectangular shape in a plan view.
  • the shape of the mounting plate 25 is not limited to this, and may be various other shapes.
  • the lighting device 20 may further include a mounting plate 25 housed inside the housing 26 and a lid portion 28 for sealing the light emitting device 10. Since the lid portion 28 is made of a translucent material, the illumination light emitted by the light emitting device 10 may be transmitted to the outside of the illumination device 20.
  • the lid portion 28 may be made of, for example, a resin material such as acrylic resin or glass.
  • the lid portion 28 may have an elongated rectangular shape in a plan view. The shape of the lid portion 28 is not limited to this, and may be various other shapes.
  • the illuminating device 20 may further include a sealing member between the lid 28 and the housing 26. By doing so, it becomes difficult for water, dust, or the like to enter the inside of the housing 26. As a result, the reliability of the lighting device 20 can be improved regardless of the environment in which the lighting device 20 is installed.
  • the lighting device 20 may further include a hygroscopic agent inside the housing 26.
  • the inner wall surface of the frame 4 may be inclined so as to spread outward as the inner wall surface moves away from the upper surface 2A of the element substrate 2.
  • the inner wall surface functions as a reflecting surface that reflects the light emitted by the light emitting element 3.
  • the descriptions such as “first” and “second” are identifiers for distinguishing the configuration.
  • the configurations distinguished by the descriptions such as “first” and “second” in the present disclosure can exchange numbers in the configurations.
  • the first conversion light can exchange the identifiers “first” and “second” with the second conversion light.
  • the exchange of identifiers takes place at the same time.
  • the configuration is distinguished.
  • the identifier may be deleted. Configurations with the identifier removed are distinguished by a code. Based solely on the description of identifiers such as "1st” and “2nd” in the present disclosure, it shall not be used as an interpretation of the order of the configurations or as a basis for the existence of identifiers with smaller numbers.
  • the X-axis, the Y-axis, and the Z-axis are provided for convenience of explanation and may be interchanged with each other.
  • the configuration according to the present disclosure has been described using a Cartesian coordinate system composed of X-axis, Y-axis, and Z-axis.
  • the positional relationship of each configuration according to the present disclosure is not limited to being orthogonal.

Abstract

This light-emitting device is provided with a substrate having a first upper surface, a light-emitting element having a second upper surface and positioned on the first upper surface, and a wavelength conversion member. At least a part of the wavelength conversion member is in contact with the second upper surface of the light-emitting element.

Description

発光装置及び照明装置Light emitting device and lighting device 関連出願へのクロスリファレンスCross-reference to related applications
　本出願は、日本国特許出願２０２０－１１２０８０号（２０２０年６月２９日出願）の優先権を主張するものであり、当該出願の開示全体を、ここに参照のために取り込む。 This application claims the priority of Japanese Patent Application No. 202-112080 (filed June 29, 2020), and the entire disclosure of the application is incorporated herein by reference.
　本開示は、発光装置及び照明装置に関する。 This disclosure relates to a light emitting device and a lighting device.
　半導体発光素子の光取り出し面上に蛍光体含有フィルム片を接着した２重構造体を有する発光装置が知られている（例えば、特許文献１参照）。 A light emitting device having a double structure in which a phosphor-containing film piece is adhered on a light extraction surface of a semiconductor light emitting device is known (see, for example, Patent Document 1).
国際公開第２０１２／１４４０３０号International Publication No. 2012/144030
　本開示の一実施形態に係る発光装置は、第１上面を有する基板と、第２上面を有するとともに前記第１上面に位置する発光素子と、波長変換部材とを備える。前記波長変換部材の少なくとも一部は、前記発光素子の前記第２上面に接触している。 The light emitting device according to the embodiment of the present disclosure includes a substrate having a first upper surface, a light emitting element having a second upper surface and located on the first upper surface, and a wavelength conversion member. At least a part of the wavelength conversion member is in contact with the second upper surface of the light emitting element.
　本開示の一実施形態に係る照明装置は、発光装置を備える。前記発光装置は、第１上面を有する基板と、第２上面を有するとともに前記第１上面に位置する発光素子と、波長変換部材とを備える。前記波長変換部材の少なくとも一部は、前記発光素子の前記第２上面に接触している。 The lighting device according to the embodiment of the present disclosure includes a light emitting device. The light emitting device includes a substrate having a first upper surface, a light emitting element having a second upper surface and located on the first upper surface, and a wavelength conversion member. At least a part of the wavelength conversion member is in contact with the second upper surface of the light emitting element.
一実施形態に係る発光装置の構成例を示す斜視図である。It is a perspective view which shows the structural example of the light emitting device which concerns on one Embodiment. 図１のＡ－Ａ断面図である。FIG. 1 is a cross-sectional view taken along the line AA of FIG. 図２の丸囲み部Ｘの拡大図である。It is an enlarged view of the circled portion X of FIG. 比較例に係る発光装置の構成例を示す断面図である。It is sectional drawing which shows the structural example of the light emitting device which concerns on a comparative example. 本実施形態に係る発光装置の温度分布の一例を示す図である。It is a figure which shows an example of the temperature distribution of the light emitting device which concerns on this embodiment. 比較例に係る発光装置の温度分布を示す図である。It is a figure which shows the temperature distribution of the light emitting device which concerns on a comparative example. 発光素子の上面に接着する第１樹脂シートと基板の上面に接着する第２樹脂シートとを有する発光装置の構成例を示す断面図である。It is sectional drawing which shows the structural example of the light emitting apparatus which has the 1st resin sheet which adheres to the upper surface of a light emitting element, and 2nd resin sheet which adheres to the upper surface of a substrate. 発光素子の上面及び基板の上面の両方に接着する第３樹脂シートを有する発光装置の構成例を示す断面図である。It is sectional drawing which shows the structural example of the light emitting apparatus which has the 3rd resin sheet which adheres to both the upper surface of a light emitting element and the upper surface of a substrate. 樹脂シートの上面が端部において傾斜している発光装置の構成例を示す断面図である。It is sectional drawing which shows the structural example of the light emitting device which the upper surface of a resin sheet is inclined at the end. 一実施形態に係る照明装置の構成例を示す斜視図である。It is a perspective view which shows the structural example of the lighting apparatus which concerns on one Embodiment.
　蛍光体を用いる発光装置において、蛍光体の温度上昇を低減することが求められる。以下、蛍光体の温度上昇を低減し得る発光装置の実施形態が説明される。 In a light emitting device using a phosphor, it is required to reduce the temperature rise of the phosphor. Hereinafter, embodiments of a light emitting device capable of reducing the temperature rise of the phosphor will be described.
（発光装置１０の構成例）
　図１、図２及び図３に示されるように、発光装置１０は、発光素子３と、波長変換部材６とを備える。発光装置１０は、発光素子３が射出する光を波長変換部材６で変換した光を射出する。 (Configuration example of light emitting device 10)
As shown in FIGS. 1, 2 and 3, the light emitting device 10 includes a light emitting element 3 and a wavelength conversion member 6. The light emitting device 10 emits light obtained by converting the light emitted by the light emitting element 3 by the wavelength conversion member 6.
　発光素子３は、３６０ｎｍ以上かつ４３０ｎｍ以下の波長領域にピーク波長を有する光を射出する。３６０ｎｍ以上かつ４３０ｎｍ以下の波長領域は、紫色光領域とも称される。 The light emitting element 3 emits light having a peak wavelength in a wavelength region of 360 nm or more and 430 nm or less. The wavelength region of 360 nm or more and 430 nm or less is also referred to as a purple light region.
　波長変換部材６は、発光素子３から波長変換部材６に入射してきた光を、３６０ｎｍ以上かつ７８０ｎｍ以下の波長領域にピーク波長を有する光に変換し、変換した光を射出する。３６０ｎｍ以上かつ９５０ｎｍ以下の波長領域は、可視光領域とも称される。可視光領域は、紫色光領域を含むとする。可視光は、紫色光を含むとする。波長変換部材６は、発光素子３が射出する光によって励起されることによって、可視光領域にピーク波長領域を射出する。発光素子３が射出する光は、励起光とも称される。発光装置１０が備える発光素子３は、励起光発光素子とも称される。 The wavelength conversion member 6 converts the light incident on the wavelength conversion member 6 from the light emitting element 3 into light having a peak wavelength in the wavelength region of 360 nm or more and 780 nm or less, and emits the converted light. The wavelength region of 360 nm or more and 950 nm or less is also referred to as a visible light region. The visible light region is assumed to include a purple light region. Visible light is assumed to include purple light. The wavelength conversion member 6 emits a peak wavelength region into a visible light region by being excited by the light emitted by the light emitting element 3. The light emitted by the light emitting element 3 is also referred to as excitation light. The light emitting element 3 included in the light emitting device 10 is also referred to as an excitation light emitting element.
　発光装置１０は、複数の波長変換部材６を有してよい。複数の波長変換部材６は、それぞれ異なるピーク波長を有する光を射出してよい。発光装置１０は、各波長変換部材６が射出する光の強度を制御することによって、種々のスペクトルを有する光を射出できる。 The light emitting device 10 may have a plurality of wavelength conversion members 6. The plurality of wavelength conversion members 6 may emit light having different peak wavelengths. The light emitting device 10 can emit light having various spectra by controlling the intensity of the light emitted by each wavelength conversion member 6.
　発光装置１０は、必須ではないが、素子基板２と、枠体４と、充填部材５とを更に備える。以下、発光装置１０の各構成が説明される。 The light emitting device 10 is not essential, but further includes an element substrate 2, a frame body 4, and a filling member 5. Hereinafter, each configuration of the light emitting device 10 will be described.
　素子基板２は、単に基板とも称される。素子基板２は、例えば、絶縁性を有する材料で形成されてよい。素子基板２は、例えば、酸化アルミニウム（アルミナ）若しくはムライト等のセラミック材料、ガラスセラミック材料、又は、これらの材料のうち複数の材料を混合した複合系材料等で形成されてよい。素子基板２は、熱膨張を調整することが可能な金属酸化物微粒子を分散させた高分子樹脂材料等で形成されてもよい。素子基板２は、窒化アルミニウムまたは炭化ケイ素（シリコンカーバイド）を含んで構成されてもよい。これにより、素子基板２の熱伝導率を向上させることでき、発光装置１０の放熱性能が向上する。 The element substrate 2 is also simply referred to as a substrate. The element substrate 2 may be formed of, for example, a material having an insulating property. The element substrate 2 may be formed of, for example, a ceramic material such as aluminum oxide (alumina) or mullite, a glass ceramic material, or a composite material obtained by mixing a plurality of these materials. The element substrate 2 may be formed of a polymer resin material or the like in which metal oxide fine particles capable of adjusting thermal expansion are dispersed. The element substrate 2 may be configured to contain aluminum nitride or silicon carbide (silicon carbide). As a result, the thermal conductivity of the element substrate 2 can be improved, and the heat dissipation performance of the light emitting device 10 is improved.
　素子基板２は、Ｚ軸の正の方向を向く上面２Ａを有する。上面２Ａは、第１上面とも称される。素子基板２の上面２Ａに、発光素子３が実装されている。素子基板２は、上面２Ａ又は内部に、発光素子３等の部品を電気的に導通する配線導体を備えてよい。配線導体は、例えば、タングステン、モリブデン、マンガン、又は銅等の導電材料で形成されてよい。配線導体は、例えば、タングステンの粉末に有機溶剤が添加された金属ペーストを、素子基板２となるセラミックグリーンシートに所定パターンで印刷し、複数のセラミックグリーンシートを積層して、焼成することにより形成されてよい。配線導体は、酸化防止のために、その表面に、例えば、ニッケル又は金等のめっき層が形成されてよい。 The element substrate 2 has an upper surface 2A facing the positive direction of the Z axis. The upper surface 2A is also referred to as a first upper surface. The light emitting element 3 is mounted on the upper surface 2A of the element substrate 2. The element substrate 2 may include a wiring conductor for electrically conducting a component such as a light emitting element 3 on the upper surface 2A or inside. The wiring conductor may be made of a conductive material such as tungsten, molybdenum, manganese, or copper. The wiring conductor is formed, for example, by printing a metal paste obtained by adding an organic solvent to tungsten powder on a ceramic green sheet to be an element substrate 2 in a predetermined pattern, laminating a plurality of ceramic green sheets, and firing them. May be done. A plating layer such as nickel or gold may be formed on the surface of the wiring conductor to prevent oxidation.
　素子基板２は、発光素子３が発光する光を効率良く外部へと放出させるため、配線導体又はめっき層と間隔を空けて、金属反射層を備えてもよい。金属反射層は、例えば、アルミニウム、銀、金、銅又はプラチナ等の金属材料で形成されてよい。 The element substrate 2 may be provided with a metal reflective layer at a distance from the wiring conductor or the plating layer in order to efficiently emit the light emitted by the light emitting element 3 to the outside. The metal reflective layer may be made of a metal material such as aluminum, silver, gold, copper or platinum.
　本実施形態において、発光素子３は、ＬＥＤ（Light Emitting Diode）であるとする。ＬＥＤは、Ｐ型半導体とＮ型半導体とが接合されたＰＮ接合中で、電子と正孔とが再結合することによって、外部へと光を発光する。発光素子３は、ＬＥＤに限られず、他の発光デバイスであってもよい。 In the present embodiment, the light emitting element 3 is an LED (Light Emitting Diode). The LED emits light to the outside by recombination of electrons and holes in a PN junction in which a P-type semiconductor and an N-type semiconductor are bonded. The light emitting element 3 is not limited to the LED, and may be another light emitting device.
　発光素子３は、素子基板２の上面２Ａ上に実装される。発光素子３は、素子基板２に設けられる配線導体の表面に被着するめっき層上に、例えば、ろう材又は半田等を介して、電気的に接続される。素子基板２の上面２Ａ上に実装される発光素子３の個数は、図２において１個であるが、特に限定されるものではなく、２個以上であってもよい。上面２Ａの平面視において、発光素子３は、枠体４よりも内側に位置する。発光素子３の個数が２個以上である場合、各発光素子３は、上面２Ａの平面視において互いに重ならないように位置する。 The light emitting element 3 is mounted on the upper surface 2A of the element substrate 2. The light emitting element 3 is electrically connected to the plating layer adhered to the surface of the wiring conductor provided on the element substrate 2 via, for example, a brazing material or solder. The number of light emitting elements 3 mounted on the upper surface 2A of the element substrate 2 is one in FIG. 2, but is not particularly limited, and may be two or more. In the plan view of the upper surface 2A, the light emitting element 3 is located inside the frame body 4. When the number of light emitting elements 3 is two or more, the light emitting elements 3 are positioned so as not to overlap each other in the plan view of the upper surface 2A.
　発光素子３は、Ｚ軸の正の方向を向く上面３Ａを有する。上面３Ａは、第２上面とも称される。発光素子３は、上面３Ａの少なくとも一部から励起光を射出する。発光素子３は、Ｚ軸に交差する方向、例えば図２の断面図においてＹ軸の正及び負の方向を向く側面３Ｂを有する。発光素子３は、側面３Ｂの少なくとも一部からも励起光を射出してよい。 The light emitting element 3 has an upper surface 3A facing the positive direction of the Z axis. The upper surface 3A is also referred to as a second upper surface. The light emitting element 3 emits excitation light from at least a part of the upper surface 3A. The light emitting element 3 has a side surface 3B that faces in a direction intersecting the Z axis, for example, in the positive and negative directions of the Y axis in the cross-sectional view of FIG. The light emitting element 3 may also emit excitation light from at least a part of the side surface 3B.
　発光素子３は、透光性基体と、透光性基体上に形成される光半導体層とを含んでよい。透光性基体は、例えば、有機金属気相成長法、又は分子線エピタキシャル成長法等の化学気相成長法を用いて、その上に光半導体層を成長させることが可能な材料を含む。透光性基体は、例えば、サファイア、窒化ガリウム、窒化アルミニウム、酸化亜鉛、セレン化亜鉛、炭化ケイ素（シリコンカーバイド）、シリコン（Ｓｉ）、又は二ホウ化ジルコニウム等で形成されてよい。透光性基体の厚みは、例えば、５０μｍ以上１０００μｍ以下であってよい。 The light emitting element 3 may include a translucent substrate and an optical semiconductor layer formed on the translucent substrate. The translucent substrate contains a material on which an optical semiconductor layer can be grown by using, for example, a chemical vapor deposition method such as an organic metal vapor phase growth method or a molecular beam epitaxial growth method. The translucent substrate may be formed of, for example, sapphire, gallium nitride, aluminum nitride, zinc oxide, zinc selenium, silicon carbide (silicon carbide), silicon (Si), zirconium dibodium or the like. The thickness of the translucent substrate may be, for example, 50 μm or more and 1000 μm or less.
　光半導体層は、透光性基体上に形成される第１半導体層と、第１半導体層上に形成される発光層と、発光層上に形成される第２半導体層とを含んでよい。第１半導体層、発光層、及び第２半導体層は、例えば、ＩＩＩ族窒化物半導体、ガリウム燐若しくはガリウムヒ素等のＩＩＩ－Ｖ族半導体、又は、窒化ガリウム、窒化アルミニウム若しくは窒化インジウム等のＩＩＩ族窒化物半導体等で形成されてよい。 The optical semiconductor layer may include a first semiconductor layer formed on a translucent substrate, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer. The first semiconductor layer, the light emitting layer, and the second semiconductor layer are, for example, a group III nitride semiconductor, a group III-V semiconductor such as gallium phosphorus or gallium arsenide, or a group III such as gallium nitride, aluminum nitride or indium nitride. It may be formed of a nitride semiconductor or the like.
　第１半導体層の厚みは、例えば、１μｍ以上５μｍ以下であってよい。発光層の厚みは、例えば、２５ｎｍ以上１５０ｎｍ以下であってよい。第２半導体層の厚みは、例えば、５０ｎｍ以上６００ｎｍ以下であってよい。 The thickness of the first semiconductor layer may be, for example, 1 μm or more and 5 μm or less. The thickness of the light emitting layer may be, for example, 25 nm or more and 150 nm or less. The thickness of the second semiconductor layer may be, for example, 50 nm or more and 600 nm or less.
　枠体４は、例えば、酸化アルミニウム、酸化チタン、酸化ジルコニウム又は酸化イットリウム等のセラミック材料で形成されてよい。枠体４は、多孔質材料で形成されてよい。枠体４は、酸化アルミニウム、酸化チタン、酸化ジルコニウム又は酸化イットリウム等の金属酸化物を含む粉末を混合した樹脂材料で形成されてよい。枠体４は、これらの材料に限られず、種々の材料で形成されてよい。 The frame 4 may be made of a ceramic material such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide. The frame 4 may be made of a porous material. The frame 4 may be formed of a resin material mixed with a powder containing a metal oxide such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide. The frame body 4 is not limited to these materials, and may be formed of various materials.
　枠体４は、素子基板２の上面２Ａに、例えば、樹脂、ろう材又は半田等を介して、接続される。枠体４は、発光素子３と間隔を空けて、発光素子３を取り囲むように素子基板２の上面２Ａ上に設けられる。内壁面は、発光素子３が発光する光を反射させる反射面として機能する。内壁面は、例えば、タングステン、モリブデン、又はマンガン等の金属材料で形成される金属層と、金属層を被覆し、ニッケル又は金等の金属材料で形成されるめっき層とを含んでよい。めっき層は、発光素子３が発光する光を反射する。 The frame body 4 is connected to the upper surface 2A of the element substrate 2 via, for example, a resin, a brazing material, a solder, or the like. The frame 4 is provided on the upper surface 2A of the element substrate 2 so as to surround the light emitting element 3 at a distance from the light emitting element 3. The inner wall surface functions as a reflecting surface that reflects the light emitted by the light emitting element 3. The inner wall surface may include, for example, a metal layer formed of a metal material such as tungsten, molybdenum, or manganese, and a plating layer covering the metal layer and formed of a metal material such as nickel or gold. The plating layer reflects the light emitted by the light emitting element 3.
　枠体４の内壁面の形状は、平面視において、円形状であってよい。内壁面の形状が円形状であることによって、枠体４は、発光素子３が発光する光を略一様に、外方に向かって反射させることができる。 The shape of the inner wall surface of the frame body 4 may be circular in a plan view. Since the shape of the inner wall surface is circular, the frame body 4 can reflect the light emitted by the light emitting element 3 substantially uniformly toward the outside.
　充填部材５は、素子基板２の上面２Ａの上の、発光素子３の側面３Ｂと枠体４の内壁面との間の空間に充填されている。充填部材５は、その上面が発光素子３の上面３Ａと面一になるように充填されていてもよい。充填部材５は波長変換部材６とともに、発光素子３を封止する。充填部材５は、発光素子３から射出される光、又は、素子基板２の上面２Ａ若しくは枠体４の内壁面で反射された光を透過させる。充填部材５は、例えば、光透過性を有する材料で形成されてよい。充填部材５は、例えば、シリコーン樹脂、アクリル樹脂若しくはエポキシ樹脂等の光透過性を有する絶縁樹脂材料、又は光透過性を有するガラス材料、等で形成されてよい。充填部材５の屈折率は、例えば、１．４以上１．６以下に設定されていてよい。 The filling member 5 is filled in the space between the side surface 3B of the light emitting element 3 and the inner wall surface of the frame 4 on the upper surface 2A of the element substrate 2. The filling member 5 may be filled so that its upper surface is flush with the upper surface 3A of the light emitting element 3. The filling member 5 seals the light emitting element 3 together with the wavelength conversion member 6. The filling member 5 transmits the light emitted from the light emitting element 3 or the light reflected by the upper surface 2A of the element substrate 2 or the inner wall surface of the frame body 4. The filling member 5 may be made of, for example, a light-transmitting material. The filling member 5 may be made of, for example, a light-transmitting insulating resin material such as a silicone resin, an acrylic resin, or an epoxy resin, or a light-transmitting glass material. The refractive index of the filling member 5 may be set to, for example, 1.4 or more and 1.6 or less.
　波長変換部材６は、Ｚ軸の負の方向を向く下面６Ａを有する。波長変換部材６は、下面６Ａで発光素子３の上面３Ａに接着されている。これによって、発光素子３の上面３Ａから射出された励起光の少なくとも一部は、波長変換部材６に直接入射する。蛍光体は、波長変換部材６に入射してきた励起光としての紫色光を、３６０ｎｍ～７８０ｎｍの波長領域に含まれるピーク波長を有する光に変換し、変換した光を射出する。 The wavelength conversion member 6 has a lower surface 6A facing the negative direction of the Z axis. The wavelength conversion member 6 is adhered to the upper surface 3A of the light emitting element 3 on the lower surface 6A. As a result, at least a part of the excitation light emitted from the upper surface 3A of the light emitting element 3 is directly incident on the wavelength conversion member 6. The phosphor converts purple light as excitation light incident on the wavelength conversion member 6 into light having a peak wavelength included in a wavelength region of 360 nm to 780 nm, and emits the converted light.
　図３に示されるように、波長変換部材６は、透光性を有する透光部材６０と、第１蛍光体６１、第２蛍光体６２、第３蛍光体６３、第４蛍光体６４及び第５蛍光体６５とを備えてよい。 As shown in FIG. 3, the wavelength conversion member 6 includes a translucent member 60 having translucency, a first phosphor 61, a second phosphor 62, a third phosphor 63, a fourth phosphor 64, and a first phosphor. 5 Fluorescent material 65 may be provided.
　透光部材６０は、例えば、フッ素樹脂、シリコーン樹脂、アクリル樹脂若しくはエポキシ樹脂等の透光性を有する絶縁樹脂、又は透光性を有するガラス材料等で形成されていてよい。本実施形態において、透光部材６０は、波長変換部材６の下面６Ａを形成し、発光素子３の上面３Ａに直接接着する。透光部材６０は、発光素子３に対して接着性を有する樹脂を含む。本実施形態において、透光部材６０は、樹脂シートとして構成されるとする。 The translucent member 60 may be formed of, for example, a translucent insulating resin such as a fluororesin, a silicone resin, an acrylic resin or an epoxy resin, or a translucent glass material. In the present embodiment, the translucent member 60 forms the lower surface 6A of the wavelength conversion member 6 and directly adheres to the upper surface 3A of the light emitting element 3. The translucent member 60 contains a resin having adhesiveness to the light emitting element 3. In the present embodiment, the translucent member 60 is configured as a resin sheet.
　第１蛍光体６１、第２蛍光体６２、第３蛍光体６３、第４蛍光体６４及び第５蛍光体６５は、単に蛍光体とも称される。蛍光体は、透光部材６０の内部に含有されているとする。蛍光体は、透光部材６０の内部で略均一に分散されていてよい。蛍光体は、入射してきた紫色光を種々のピーク波長を有する光に変換する。 The first fluorescent substance 61, the second fluorescent substance 62, the third fluorescent substance 63, the fourth fluorescent substance 64, and the fifth fluorescent substance 65 are also simply referred to as phosphors. It is assumed that the phosphor is contained inside the translucent member 60. The phosphor may be dispersed substantially uniformly inside the translucent member 60. The phosphor converts the incident purple light into light having various peak wavelengths.
　第１蛍光体６１は、紫色光を、例えば４００ｎｍから５００ｎｍまでの波長領域内にピーク波長を有するスペクトルで特定される光、つまり青色の光に変換してよい。第１蛍光体６１は、例えば、ＢａＭｇＡｌ10Ｏ17：Ｅｕ、又は（Ｓｒ，Ｃａ，Ｂａ）10（ＰＯ4）6Ｃｌ2：Ｅｕ，（Ｓｒ，Ｂａ）10（ＰＯ4）6Ｃｌ2：Ｅｕ等を用いることができる。 The first phosphor 61 may convert violet light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 400 nm to 500 nm, that is, blue light. The first phosphor 61 is, for example, BaMgAl 10 O 17 : Eu, or (Sr, Ca, Ba) 10 (PO 4 ) 6 Cl 2 : Eu, (Sr, Ba) 10 (PO 4 ) 6 Cl 2 : Eu. Etc. can be used.
　第２蛍光体６２は、紫色光を、例えば４５０ｎｍから５５０ｎｍまでの波長領域内にピーク波長を有するスペクトルで特定される光、つまり青緑色の光に変換してよい。第２蛍光体６２は、例えば、（Ｓｒ，Ｂａ，Ｃａ）5（ＰＯ4）3Ｃｌ：Ｅｕ，Ｓｒ4Ａｌ14Ｏ25：Ｅｕ等を用いることができる。 The second phosphor 62 may convert the purple light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 450 nm to 550 nm, that is, blue-green light. As the second phosphor 62, for example, (Sr, Ba, Ca) 5 (PO 4 ) 3 Cl: Eu, Sr 4 Al 14 O 25 : Eu and the like can be used.
　第３蛍光体６３は、紫色光を、例えば５００ｎｍから６００ｎｍまでの波長領域内にピーク波長を有するスペクトルで特定される光、つまり緑色の光に変換してよい。第３蛍光体６３は、例えば、ＳｒＳｉ2（Ｏ，Ｃｌ）2Ｎ2：Ｅｕ、（Ｓｒ，Ｂａ，Ｍｇ）2ＳｉＯ4：Ｅｕ2+、又はＺｎＳ：Ｃｕ，Ａｌ、Ｚｎ2ＳｉＯ4：Ｍｎ等を用いることができる。 The third phosphor 63 may convert the violet light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 500 nm to 600 nm, that is, green light. The third phosphor 63 is, for example, SrSi 2 (O, Cl) 2 N 2 : Eu, (Sr, Ba, Mg) 2 SiO 4 : Eu 2+ , or ZnS: Cu, Al, Zn 2 SiO 4 : Mn. Etc. can be used.
　第４蛍光体６４は、紫色光を、例えば６００ｎｍから７００ｎｍまでの波長領域内にピーク波長を有するスペクトルで特定される光、つまり赤色の光に変換してよい。第４蛍光体６４は、例えば、Ｙ2Ｏ2Ｓ：Ｅｕ、Ｙ2Ｏ3：Ｅｕ、ＳｒＣａＣｌＡｌＳｉＮ3：Ｅｕ2+、ＣａＡｌＳｉＮ3：Ｅｕ、又はＣａＡｌＳｉ（ＯＮ）3：Ｅｕ等を用いることができる。 The fourth fluorophore 64 may convert the violet light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 600 nm to 700 nm, that is, red light. As the fourth phosphor 64, for example, Y 2 O 2 S: Eu, Y 2 O 3 : Eu, SrCaClAlSiN 3 : Eu 2+ , CaAlSiN 3 : Eu, CaAlSi (ON) 3 : Eu, or the like can be used. ..
　第５蛍光体６５は、紫色光を、例えば６８０ｎｍから８００ｎｍまでの波長領域内にピーク波長を有するスペクトルで特定される光、つまり近赤外光に変換してよい。近赤外光は、６８０から２５００ｎｍまでの波長領域の光を含んでよい。第５蛍光体６５は、例えば、３Ｇａ5Ｏ12：Ｃｒ等を用いることができる。 The fifth phosphor 65 may convert the violet light into light specified in the spectrum having a peak wavelength in the wavelength region from, for example, 680 nm to 800 nm, that is, near infrared light. Near-infrared light may include light in the wavelength range from 680 to 2500 nm. As the fifth phosphor 65, for example, 3Ga 5 O 12 : Cr or the like can be used.
　波長変換部材６が含有する蛍光体の種類の組み合わせは、特に限定されない。波長変換部材６は、第１蛍光体６１、第２蛍光体６２、第３蛍光体６３、第４蛍光体６４及び第５蛍光体６５の少なくとも１種類の蛍光体を含んでよい。波長変換部材６は、第１蛍光体６１、第２蛍光体６２、第３蛍光体６３、第４蛍光体６４及び第５蛍光体６５に限られず、他の種類の蛍光体を有してもよい。 The combination of types of phosphors contained in the wavelength conversion member 6 is not particularly limited. The wavelength conversion member 6 may include at least one kind of phosphor of the first phosphor 61, the second phosphor 62, the third phosphor 63, the fourth phosphor 64 and the fifth phosphor 65. The wavelength conversion member 6 is not limited to the first phosphor 61, the second phosphor 62, the third phosphor 63, the fourth phosphor 64 and the fifth phosphor 65, and may have other types of phosphors. good.
　発光素子３から射出された紫色光の少なくとも一部は、波長変換部材６に入射する。また、発光素子３から射出された紫色光の一部は、充填部材５を通過して波長変換部材６に入射し得る。言い換えれば、波長変換部材６は、発光素子３から射出された紫色光が入射してくるように位置する。図１及び図２に例示されている構成において、波長変換部材６は、発光素子３の上面３Ａに沿って位置している。波長変換部材６の配置は、この例に限られず、他の種々の形態とされ得る。 At least a part of the purple light emitted from the light emitting element 3 is incident on the wavelength conversion member 6. Further, a part of the purple light emitted from the light emitting element 3 may pass through the filling member 5 and enter the wavelength conversion member 6. In other words, the wavelength conversion member 6 is positioned so that the purple light emitted from the light emitting element 3 is incident. In the configurations exemplified in FIGS. 1 and 2, the wavelength conversion member 6 is located along the upper surface 3A of the light emitting element 3. The arrangement of the wavelength conversion member 6 is not limited to this example, and may be in various other forms.
　上述したように、発光素子３から波長変換部材６に入射した紫色光は、蛍光体によって異なるピーク波長を有する光に変換される。変換された光のピーク波長は、可視光領域に含まれ得る。波長変換部材６に含まれる蛍光体の組み合わせによって、変換された光は、複数のピーク波長を有し得る。例えば、１つの波長変換部材６が青色の蛍光を放射する蛍光体、青緑色の蛍光を放射する蛍光体、及び緑色の蛍光を放射する蛍光体を含む場合、変換された光は、青色、青緑色及び緑色それぞれの波長をピーク波長として有する。１つの波長変換部材６が１種類の蛍光体のみを含む場合、変換された光は、その蛍光体のピーク波長を有する。１つの波長変換部材６は、これらの例に限られず、種々の組み合わせで蛍光体を含んでもよい。波長変換部材６から放射される光の色彩は、波長変換部材６に含まれる蛍光体の種類に基づいて決定される。つまり、変換された光は、種々のスペクトルを有し得る。 As described above, the purple light incident on the wavelength conversion member 6 from the light emitting element 3 is converted into light having a different peak wavelength depending on the phosphor. The peak wavelength of the converted light may be included in the visible light region. The light converted by the combination of the phosphors contained in the wavelength conversion member 6 may have a plurality of peak wavelengths. For example, when one wavelength conversion member 6 contains a phosphor that emits blue fluorescence, a phosphor that emits bluish green fluorescence, and a phosphor that emits green fluorescence, the converted light is blue, blue. It has each of green and green wavelengths as peak wavelengths. When one wavelength conversion member 6 contains only one kind of phosphor, the converted light has the peak wavelength of the phosphor. One wavelength conversion member 6 is not limited to these examples, and may contain a fluorescent substance in various combinations. The color of the light emitted from the wavelength conversion member 6 is determined based on the type of the phosphor contained in the wavelength conversion member 6. That is, the converted light can have various spectra.
　本実施形態に係る発光装置１０は、波長変換部材６に含まれる蛍光体の組み合わせによって、種々のスペクトルを有する光を射出できる。発光装置１０は、例えば、太陽からの直射日光のスペクトル、海中の所定の深さまで到達した日光のスペクトル、ろうそくの炎が発する光のスペクトル、又は、蛍の光のスペクトル等を有する光等を射出できる。言い換えれば、発光装置１０は、種々の色を有する光を射出できる。また、発光装置１０は、種々の色温度を有する光を射出できる。 The light emitting device 10 according to the present embodiment can emit light having various spectra depending on the combination of phosphors contained in the wavelength conversion member 6. The light emitting device 10 emits, for example, a spectrum of direct sunlight from the sun, a spectrum of sunlight reaching a predetermined depth in the sea, a spectrum of light emitted by a candle flame, a spectrum of light of a firefly, or the like. can. In other words, the light emitting device 10 can emit light having various colors. Further, the light emitting device 10 can emit light having various color temperatures.
（波長変換部材６の温度）
　波長変換部材６に入射した励起光のエネルギーの一部は、熱エネルギーに変換される。その結果、波長変換部材６の温度が上昇する。波長変換部材６で生じた熱は、発光素子３又は充填部材５を通じて素子基板２に拡散する。 (Temperature of wavelength conversion member 6)
A part of the energy of the excitation light incident on the wavelength conversion member 6 is converted into thermal energy. As a result, the temperature of the wavelength conversion member 6 rises. The heat generated by the wavelength conversion member 6 diffuses to the element substrate 2 through the light emitting element 3 or the filling member 5.
　本実施形態に係る発光装置１０において、波長変換部材６は、下面６Ａにおいて、発光素子３の上面３Ａに直接接着されている。これによって、波長変換部材６で生じた熱は、発光素子３に直接拡散し、発光素子３を通じて素子基板２に拡散し得る。 In the light emitting device 10 according to the present embodiment, the wavelength conversion member 6 is directly adhered to the upper surface 3A of the light emitting element 3 on the lower surface 6A. As a result, the heat generated by the wavelength conversion member 6 can be directly diffused to the light emitting element 3 and diffused to the element substrate 2 through the light emitting element 3.
　図４に比較例に係る発光装置９０が示される。発光装置９０は、素子基板２と、発光素子３と、枠体４と、充填部材５と、波長変換部材６とを備える。比較例に係る発光装置９０は、充填部材５が発光素子３の上面３Ａと波長変換部材６の下面６Ａとの間に位置する点において、本実施形態に係る発光装置１０と異なる。 FIG. 4 shows a light emitting device 90 according to a comparative example. The light emitting device 90 includes an element substrate 2, a light emitting element 3, a frame body 4, a filling member 5, and a wavelength conversion member 6. The light emitting device 90 according to the comparative example is different from the light emitting device 10 according to the present embodiment in that the filling member 5 is located between the upper surface 3A of the light emitting element 3 and the lower surface 6A of the wavelength conversion member 6.
　ここで、発光素子３の熱伝導率は、充填部材５の熱伝導率よりも高いとする。比較例に係る発光装置９０において、波長変換部材６で生じた熱は、充填部材５を介して素子基板２に拡散する。一方で、本実施形態に係る発光装置１０において、波長変換部材６で生じた熱は、発光素子３を介して素子基板２に拡散する。熱伝導率の違いによって、波長変換部材６で生じた熱は、比較例に係る発光装置９０よりも本実施形態に係る発光装置１０において素子基板２に拡散しやすい。 Here, it is assumed that the thermal conductivity of the light emitting element 3 is higher than the thermal conductivity of the filling member 5. In the light emitting device 90 according to the comparative example, the heat generated in the wavelength conversion member 6 diffuses to the element substrate 2 via the filling member 5. On the other hand, in the light emitting device 10 according to the present embodiment, the heat generated by the wavelength conversion member 6 diffuses to the element substrate 2 via the light emitting element 3. Due to the difference in thermal conductivity, the heat generated in the wavelength conversion member 6 is more likely to diffuse to the element substrate 2 in the light emitting device 10 according to the present embodiment than in the light emitting device 90 according to the comparative example.
　また、本実施形態に係る発光装置１０における波長変換部材６から素子基板２までの距離は、比較例に係る発光装置９０における波長変換部材６から素子基板２までの距離よりも短い。素子基板２までの距離の違いによっても、波長変換部材６で生じた熱は、比較例に係る発光装置９０よりも本実施形態に係る発光装置１０において素子基板２に拡散しやすい。 Further, the distance from the wavelength conversion member 6 to the element substrate 2 in the light emitting device 10 according to the present embodiment is shorter than the distance from the wavelength conversion member 6 to the element substrate 2 in the light emitting device 90 according to the comparative example. Even if the distance to the element substrate 2 is different, the heat generated by the wavelength conversion member 6 is more likely to diffuse to the element substrate 2 in the light emitting device 10 according to the present embodiment than in the light emitting device 90 according to the comparative example.
　以上述べてきたように、本実施形態に係る発光装置１０は、比較例に係る発光装置９０よりも波長変換部材６で生じた熱を放散しやすい。その結果、本実施形態に係る発光装置１０における波長変換部材６の温度は、比較例に係る発光装置９０における波長変換部材６の温度よりも低くなる。 As described above, the light emitting device 10 according to the present embodiment is more likely to dissipate the heat generated by the wavelength conversion member 6 than the light emitting device 90 according to the comparative example. As a result, the temperature of the wavelength conversion member 6 in the light emitting device 10 according to the present embodiment is lower than the temperature of the wavelength conversion member 6 in the light emitting device 90 according to the comparative example.
　本実施形態に係る発光装置１０と比較例に係る発光装置９０との間の温度分布の違いを具体的に説明するために、発光素子３が励起光を射出した場合の温度分布がシミュレーションによって算出された。以下の表１を参照して、シミュレーションの条件及び結果が説明される。
Figure JPOXMLDOC01-appb-T000001
 In order to specifically explain the difference in temperature distribution between the light emitting device 10 according to the present embodiment and the light emitting device 90 according to the comparative example, the temperature distribution when the light emitting element 3 emits excitation light is calculated by simulation. Was done. The simulation conditions and results are described with reference to Table 1 below.
Figure JPOXMLDOC01-appb-T000001
　本実施形態に係る発光装置１０における温度分布を算出するために、Ａ、Ｂ、Ｃ及びＤで表される４通りのシミュレーション条件が設定された。一方で、比較例に係る発光装置９０における温度分布を算出するためのシミュレーション条件が別途設定された。 In order to calculate the temperature distribution in the light emitting device 10 according to the present embodiment, four simulation conditions represented by A, B, C and D were set. On the other hand, simulation conditions for calculating the temperature distribution in the light emitting device 90 according to the comparative example were separately set.
　シミュレーション条件は、発光素子３と波長変換部材６との間の充填部材５の有無を含む。発光素子３と波長変換部材６との間の充填部材５の有無は、「充填部材」の行の各セルの記載で特定される。本実施形態に係る発光装置１０を表す、Ａ、Ｂ、Ｃ及びＤのいずれのシミュレーション条件においても、「充填部材」の行の各セルに「無し」が記載されている。つまり、本実施形態に係る発光装置１０において、発光素子３と波長変換部材６との間に、充填部材５は存在しない。一方で、比較例に係る発光装置９０を表すシミュレーション条件において、「充填部材」の行のセルに「有り」が記載されている。つまり、比較例に係る発光装置９０において、発光素子３と波長変換部材６との間に、充填部材５が存在する。 The simulation conditions include the presence or absence of the filling member 5 between the light emitting element 3 and the wavelength conversion member 6. The presence or absence of the filling member 5 between the light emitting element 3 and the wavelength conversion member 6 is specified by the description of each cell in the row of "filling member". In any of the simulation conditions A, B, C, and D representing the light emitting device 10 according to the present embodiment, "none" is described in each cell in the row of "filling member". That is, in the light emitting device 10 according to the present embodiment, the filling member 5 does not exist between the light emitting element 3 and the wavelength conversion member 6. On the other hand, in the simulation condition representing the light emitting device 90 according to the comparative example, "Yes" is described in the cell in the row of "Filling member". That is, in the light emitting device 90 according to the comparative example, the filling member 5 exists between the light emitting element 3 and the wavelength conversion member 6.
　シミュレーション条件は、発光素子３の側面３Ｂにおける波長変換部材６の有無を含む。発光素子３の側面３Ｂにおける波長変換部材６の有無は、「側面カバー」の行の各セルの記載で特定される。Ａ、Ｂ及びＤのシミュレーション条件において、「側面カバー」の行の各セルに「無し」が記載されている。Ｃのシミュレーション条件において、「側面カバー」の行のセルに「有り」が記載されている。つまり、波長変換部材６は、Ｃの条件のみにおいて側面３Ｂに存在する。一方で、比較例に係る発光装置９０において、発光素子３の側面３Ｂは、充填部材５で覆われている。したがって、発光素子３の側面３Ｂに波長変換部材６は、そもそも存在しない。「側面カバー」の行のセルに「－」が記載されている。 The simulation conditions include the presence / absence of the wavelength conversion member 6 on the side surface 3B of the light emitting element 3. The presence or absence of the wavelength conversion member 6 on the side surface 3B of the light emitting element 3 is specified by the description of each cell in the row of the "side surface cover". In the simulation conditions of A, B, and D, "None" is described in each cell of the "side cover" row. In the simulation condition of C, "Yes" is described in the cell of the row of "Side cover". That is, the wavelength conversion member 6 exists on the side surface 3B only under the condition of C. On the other hand, in the light emitting device 90 according to the comparative example, the side surface 3B of the light emitting element 3 is covered with the filling member 5. Therefore, the wavelength conversion member 6 does not exist on the side surface 3B of the light emitting element 3 in the first place. A "-" is written in the cell in the row of the "side cover".
　シミュレーション条件は、発光素子３と波長変換部材６との間の接着剤の有無を含む。発光素子３と波長変換部材６との間の接着剤の有無は、「接着剤」の行の各セルの記載で特定される。Ａ、Ｂ及びＣのシミュレーション条件において、「接着剤」の行の各セルに「無し」が記載されている。Ｄのシミュレーション条件において、「接着剤」の行のセルに「有り」が記載されている。つまり、Ｄの条件のみにおいて、発光素子３と波長変換部材６との間に接着剤が存在する。一方で、比較例に係る発光装置９０において、発光素子３と波長変換部材６との間に充填部材５が存在する。したがって、発光素子３と波長変換部材６との間に接着剤は、そもそも存在しない。「接着剤」の行のセルに「－」が記載されている。 The simulation conditions include the presence or absence of an adhesive between the light emitting element 3 and the wavelength conversion member 6. The presence or absence of an adhesive between the light emitting element 3 and the wavelength conversion member 6 is specified by the description of each cell in the "adhesive" row. In the simulation conditions of A, B and C, "None" is described in each cell of the "Adhesive" row. In the simulation condition of D, "Yes" is described in the cell of the "Adhesive" row. That is, only under the condition D, there is an adhesive between the light emitting element 3 and the wavelength conversion member 6. On the other hand, in the light emitting device 90 according to the comparative example, the filling member 5 exists between the light emitting element 3 and the wavelength conversion member 6. Therefore, there is no adhesive between the light emitting element 3 and the wavelength conversion member 6. A "-" is written in the cell of the "Adhesive" row.
　シミュレーション条件は、発光素子３（チップ）の配置形態が大きいサイズを１個だけ配置した形態であるか、小さいサイズを７個配置した形態であるかを含む。発光素子３（チップ）の配置形態は、「チップ形態」の行の各セルの記載で特定される。Ａ、Ｃ及びＤのシミュレーション条件において、「チップ形態」の行の各セルに「小×７個」が記載されている。Ｂのシミュレーション条件において、「チップ形態」の行のセルに「大×１個」が記載されている。つまり、Ｂの条件のみにおいて、発光素子３（チップ）の配置形態は、大きいサイズを１個だけ配置した形態となっている。Ａ、Ｃ及びＤの条件において、発光素子３（チップ）の配置形態は、小さいサイズを７個配置した形態となっている。一方で、比較例に係る発光装置９０において、発光素子３（チップ）の配置形態は、小さいサイズを７個配置した形態となっている。したがって、「チップ形態」の行のセルに「小×７個」が記載されている。 The simulation condition includes whether the arrangement form of the light emitting element 3 (chip) is a form in which only one large size is arranged or a form in which seven small sizes are arranged. The arrangement form of the light emitting element 3 (chip) is specified by the description of each cell in the row of "chip form". In the simulation conditions of A, C, and D, "small x 7" is described in each cell of the "chip form" row. In the simulation condition of B, "large x 1" is described in the cell of the row of "chip form". That is, only under the condition B, the arrangement form of the light emitting element 3 (chip) is such that only one large size is arranged. Under the conditions of A, C, and D, the light emitting element 3 (chip) is arranged in a form in which seven small sizes are arranged. On the other hand, in the light emitting device 90 according to the comparative example, the light emitting element 3 (chip) is arranged in a form in which seven small sizes are arranged. Therefore, "small x 7" is described in the cell in the row of "chip form".
　全てのシミュレーション条件において、発光装置１０は、実装基板７の上に実装されているとする。素子基板２は、その下面（上面２Ａの反対側の面）の少なくとも一部で実装基板７に接触しているとする。実装基板７は、Ａ、Ｂ、Ｃ及びＤの条件においてＡｌ＋絶縁、つまりアルミニウムに絶縁処理を施した基板であるとする。実装基板７は、比較例の条件においてＬＴＣＣ（Low Temperature Co-fired Ceramics）基板であるとする。接触とは、必ずしも対象物同士が接着剤等で固定させているわけではなく、少なくとも接していることをいう。このとき、対象物同士は、その一部であれば接着剤等で固定されていてもよい。 Under all simulation conditions, it is assumed that the light emitting device 10 is mounted on the mounting board 7. It is assumed that the element substrate 2 is in contact with the mounting substrate 7 at least a part of its lower surface (the surface opposite to the upper surface 2A). It is assumed that the mounting substrate 7 is Al + insulated under the conditions of A, B, C and D, that is, a substrate in which aluminum is insulated. It is assumed that the mounting substrate 7 is an LTCC (Low Temperature Co-fired Ceramics) substrate under the conditions of the comparative example. Contact means that the objects are not necessarily fixed to each other with an adhesive or the like, but are at least in contact with each other. At this time, the objects may be fixed to each other with an adhesive or the like as long as they are a part of the objects.
　図５に、Ａのシミュレーション条件に基づいて算出した、本実施形態に係る発光装置１０の各構成部の温度分布のシミュレーション結果が示される。一方で、図６に、比較例のシミュレーション条件に基づいて算出した、比較例に係る発光装置９０の各構成部の温度分布のシミュレーション結果が示される。図５及び図６において、グレースケールの濃淡の違いが温度の違いを表している。グレースケールで濃く表されているほど、その部分の温度が高いことを表している。発光装置１０及び９０は、中心軸の周りに軸対称の構成を有すると仮定する。発光装置１０及び９０は、中心軸を通るＸＺ平面及びＹＺ平面それぞれに沿って２方向からの断面が見えるように表されている。 FIG. 5 shows a simulation result of the temperature distribution of each component of the light emitting device 10 according to the present embodiment, which is calculated based on the simulation condition of A. On the other hand, FIG. 6 shows a simulation result of the temperature distribution of each component of the light emitting device 90 according to the comparative example, which was calculated based on the simulation conditions of the comparative example. In FIGS. 5 and 6, the difference in shade of gray scale represents the difference in temperature. The darker the gray scale, the higher the temperature of that part. It is assumed that the light emitting devices 10 and 90 have an axisymmetric configuration around the central axis. The light emitting devices 10 and 90 are represented so that the cross sections from two directions can be seen along the XZ plane and the YZ plane passing through the central axis.
　図５と図６とを比較すると、本実施形態に係る発光装置１０の波長変換部材６の温度は、比較例に係る発光装置９０の波長変換部材６の温度よりも低い。シミュレーションによって算出された波長変換部材６の温度は、表１の「蛍光体温度」の行のセルに記載されている。発光装置１０の波長変換部材６の温度、及び、発光装置９０の波長変換部材６の温度はそれぞれ、１１５．５℃、及び、２４９．６℃である。また、本実施形態に係る発光装置１０の発光素子３の温度は、比較例に係る発光装置９０の発光素子３の温度よりも低い。シミュレーションによって算出された発光素子３の温度は、表１の「チップ温度」の行のセルに記載されている。具体的には、発光装置１０の発光素子３の温度、及び、発光装置９０の発光素子３の温度はそれぞれ、６１．０℃、及び、１７６．７℃である。発光素子３と波長変換部材６との間に充填部材５が存在しないことは、波長変換部材６から発光素子３へ拡散する熱量を増大させ、本実施形態に係る発光装置１０の温度を比較例に係る発光装置９０の温度よりも低く抑えることに寄与している。 Comparing FIGS. 5 and 6, the temperature of the wavelength conversion member 6 of the light emitting device 10 according to the present embodiment is lower than the temperature of the wavelength conversion member 6 of the light emitting device 90 according to the comparative example. The temperature of the wavelength conversion member 6 calculated by the simulation is described in the cell in the row of "Fluorescent temperature" in Table 1. The temperature of the wavelength conversion member 6 of the light emitting device 10 and the temperature of the wavelength conversion member 6 of the light emitting device 90 are 115.5 ° C. and 249.6 ° C., respectively. Further, the temperature of the light emitting element 3 of the light emitting device 10 according to the present embodiment is lower than the temperature of the light emitting element 3 of the light emitting device 90 according to the comparative example. The temperature of the light emitting element 3 calculated by the simulation is described in the cell of the row of "chip temperature" in Table 1. Specifically, the temperature of the light emitting element 3 of the light emitting device 10 and the temperature of the light emitting element 3 of the light emitting device 90 are 61.0 ° C. and 176.7 ° C., respectively. The absence of the filling member 5 between the light emitting element 3 and the wavelength conversion member 6 increases the amount of heat diffused from the wavelength conversion member 6 to the light emitting element 3, and the temperature of the light emitting device 10 according to the present embodiment is compared with the comparative example. Contributes to keeping the temperature lower than the temperature of the light emitting device 90 according to the above.
　Ｂの条件において、発光素子３の温度は、Ａの条件よりも更に低くなっている。発光素子３の配置形態が、大きいサイズを１個だけ配置した形態になっていることに起因すると考えられる。 Under the condition B, the temperature of the light emitting element 3 is further lower than the condition A. It is considered that this is because the arrangement form of the light emitting element 3 is such that only one large size is arranged.
　Ｃの条件において、発光素子３及び波長変換部材６の温度は、Ａの条件よりも更に低くなっている。発光素子３の側面３Ｂに波長変換部材６が位置することによって、波長変換部材６から発光素子３を通じて素子基板２に拡散する熱量が増大したことに起因すると考えられる。 Under the condition C, the temperatures of the light emitting element 3 and the wavelength conversion member 6 are further lower than the condition A. It is considered that the position of the wavelength conversion member 6 on the side surface 3B of the light emitting element 3 increases the amount of heat diffused from the wavelength conversion member 6 to the element substrate 2 through the light emitting element 3.
　Ｄの条件において、発光素子３及び波長変換部材６の温度は、Ａ～Ｃの条件より高いものの、比較例の条件よりも低く抑えられている。波長変換部材６を接着剤によって発光素子３に接着していることによって、Ａ～Ｃの条件よりも、波長変換部材６から発光素子３を通じて素子基板２に拡散する熱量が減少したことに起因すると考えられる。 Under the condition D, the temperatures of the light emitting element 3 and the wavelength conversion member 6 are higher than the conditions A to C, but are suppressed to be lower than the conditions of the comparative example. This is because the amount of heat diffused from the wavelength conversion member 6 to the element substrate 2 through the light emitting element 3 is reduced from the conditions A to C by adhering the wavelength conversion member 6 to the light emitting element 3 with an adhesive. Conceivable.
　以上のことから、本実施形態に係る発光装置１０の温度は、比較例に係る発光装置９０の温度よりも低く抑えられることが、Ａ～Ｄのいずれのシミュレーション条件に基づくシミュレーション結果においても確認された。発光素子３と波長変換部材６との間に充填部材５が存在しないことが、発光装置１０の温度を低く抑えることに大きく寄与することがシミュレーション結果によっても明らかにされた。よって、発光素子３と波長変換部材６の間に接着剤が存在しないことにより、より発光装置１０の放熱性を向上させることができる。 From the above, it was confirmed in the simulation results based on any of the simulation conditions A to D that the temperature of the light emitting device 10 according to the present embodiment can be suppressed to be lower than the temperature of the light emitting device 90 according to the comparative example. rice field. The simulation results also revealed that the absence of the filling member 5 between the light emitting element 3 and the wavelength conversion member 6 greatly contributes to keeping the temperature of the light emitting device 10 low. Therefore, since there is no adhesive between the light emitting element 3 and the wavelength conversion member 6, the heat dissipation of the light emitting device 10 can be further improved.
（発光装置１０の他の構成例）
　上述のシミュレーション条件のうち、発光素子３の側面３Ｂに波長変換部材６が位置するＣの条件に対応する構成の具体例が図７に示される。樹脂シートとして構成される波長変換部材６は、第１樹脂シート６６と、第２樹脂シート６７とを含んで構成される。第１樹脂シート６６と第２樹脂シート６７とは、積層している。第１樹脂シート６６は、発光素子３の上面３Ａの全体よりも大きく広がる。第１樹脂シート６６は、下面６Ａを有し、下面６Ａで発光素子３の上面３Ａに接着される。発光素子３の上面３Ａから射出された励起光は、第１樹脂シート６６に入射する。第１樹脂シート６６に入射した励起光の少なくとも一部は、他の波長の光に変換される。他の一部は、第１樹脂シート６６で熱に変換され、第１樹脂シート６６の温度を上昇させる。第１樹脂シート６６で生じた熱の少なくとも一部は、発光素子３を通って素子基板２に拡散する。 (Other configuration examples of the light emitting device 10)
Among the above simulation conditions, FIG. 7 shows a specific example of the configuration corresponding to the condition C in which the wavelength conversion member 6 is located on the side surface 3B of the light emitting element 3. The wavelength conversion member 6 configured as a resin sheet includes a first resin sheet 66 and a second resin sheet 67. The first resin sheet 66 and the second resin sheet 67 are laminated. The first resin sheet 66 is wider than the entire upper surface 3A of the light emitting element 3. The first resin sheet 66 has a lower surface 6A, and is adhered to the upper surface 3A of the light emitting element 3 at the lower surface 6A. The excitation light emitted from the upper surface 3A of the light emitting element 3 is incident on the first resin sheet 66. At least a part of the excitation light incident on the first resin sheet 66 is converted into light of another wavelength. The other part is converted into heat by the first resin sheet 66, and raises the temperature of the first resin sheet 66. At least a part of the heat generated in the first resin sheet 66 is diffused to the element substrate 2 through the light emitting element 3.
　第２樹脂シート６７は、素子基板２をＺ軸の正の方向から見た平面視において、発光素子３の上面３Ａと重ならないように位置する。第２樹脂シート６７は、下面６Ｂを有し、下面６Ｂの少なくとも一部で素子基板２の上面２Ａに接触している。第２樹脂シート６７は、下面６Ｂで素子基板２の上面２Ａに接着されていてもよい。第１樹脂シート６６で生じた熱の一部は、第２樹脂シート６７に拡散し、第２樹脂シート６７を通じて素子基板２に拡散する。第２樹脂シート６７が素子基板２に接触していることによって、第１樹脂シート６６で生じた熱は、素子基板２に拡散しやすくなる。その結果、第１樹脂シート６６、及び、発光装置１０の他の構成部の温度が低く抑えられる。 The second resin sheet 67 is positioned so as not to overlap the upper surface 3A of the light emitting element 3 in a plan view of the element substrate 2 when viewed from the positive direction of the Z axis. The second resin sheet 67 has a lower surface 6B, and at least a part of the lower surface 6B is in contact with the upper surface 2A of the element substrate 2. The second resin sheet 67 may be adhered to the upper surface 2A of the element substrate 2 on the lower surface 6B. A part of the heat generated in the first resin sheet 66 diffuses into the second resin sheet 67 and diffuses into the element substrate 2 through the second resin sheet 67. When the second resin sheet 67 is in contact with the element substrate 2, the heat generated by the first resin sheet 66 is likely to be diffused to the element substrate 2. As a result, the temperatures of the first resin sheet 66 and the other components of the light emitting device 10 are kept low.
　波長変換部材６を構成する樹脂シートは、平面視において、発光素子３に重なる第１領域と、発光素子３に重ならない第２領域を有するともいえる。第１樹脂シート６６は、第１領域と第２領域とにまたがって位置する。第２樹脂シート６７は、第２領域に位置する。樹脂シートは、第２領域に位置した少なくとも一部が素子基板２に接着されていてもよい。樹脂シートの一部が素子基板２に接着されていることで、樹脂シートから素子基板２に直接放熱できるため、発光装置１０の放熱性が向上する。なお、接着とは、接着剤等を介して対象物同士が固定されている状態をいう。 It can be said that the resin sheet constituting the wavelength conversion member 6 has a first region overlapping the light emitting element 3 and a second region not overlapping the light emitting element 3 in a plan view. The first resin sheet 66 is located so as to straddle the first region and the second region. The second resin sheet 67 is located in the second region. At least a part of the resin sheet located in the second region may be adhered to the element substrate 2. Since a part of the resin sheet is adhered to the element substrate 2, heat can be directly dissipated from the resin sheet to the element substrate 2, so that the heat dissipation of the light emitting device 10 is improved. In addition, "adhesion" means a state in which objects are fixed to each other via an adhesive or the like.
　第２樹脂シート６７は、発光素子３の側面３Ｂの少なくとも一部と接触してもよい。第２樹脂シート６７は、発光素子３の側面３Ｂに接着されていてもよい。発光素子３が側面３Ｂからも励起光を射出する場合、励起光は第２樹脂シート６７にも入射しやすくなり、第２樹脂シート６７でも他の波長の光に変換される。その結果、励起光の変換効率が高まり得る。 The second resin sheet 67 may come into contact with at least a part of the side surface 3B of the light emitting element 3. The second resin sheet 67 may be adhered to the side surface 3B of the light emitting element 3. When the light emitting element 3 also emits the excitation light from the side surface 3B, the excitation light is likely to be incident on the second resin sheet 67, and the second resin sheet 67 is also converted into light having another wavelength. As a result, the conversion efficiency of the excitation light can be increased.
　第１樹脂シート６６の厚みと第２樹脂シート６７の厚みとは、両方とも同じであってよいし、異なっていてもよい。第２樹脂シート６７の厚みは、発光素子３の厚みと同じであってもよいし異なっていてもよい。 The thickness of the first resin sheet 66 and the thickness of the second resin sheet 67 may both be the same or different. The thickness of the second resin sheet 67 may be the same as or different from the thickness of the light emitting element 3.
　平面視において、第１樹脂シート６６と第２樹脂シート６７とは互いに重ならないように構成されてよい。具体的には、第１樹脂シート６６は、発光素子３に重なる範囲にだけ位置する形状で構成されてよい。第２樹脂シート６７は、発光素子３に重ならない範囲にだけ位置する形状で構成されてよい。第２樹脂シート６７の厚みが発光素子３の厚みよりも大きい場合、第１樹脂シート６６の側面と第２樹脂シート６７の側面とが互いに接触することによって、発光素子３は、第１樹脂シート６６と第２樹脂シート６７とを合わせた構成によって覆われる。 In a plan view, the first resin sheet 66 and the second resin sheet 67 may be configured so as not to overlap each other. Specifically, the first resin sheet 66 may be configured in a shape located only in a range overlapping the light emitting element 3. The second resin sheet 67 may be configured in a shape that is located only in a range that does not overlap with the light emitting element 3. When the thickness of the second resin sheet 67 is larger than the thickness of the light emitting element 3, the side surface of the first resin sheet 66 and the side surface of the second resin sheet 67 come into contact with each other, so that the light emitting element 3 is the first resin sheet. It is covered by the combined configuration of 66 and the second resin sheet 67.
　図８に、発光素子３の側面３Ｂに波長変換部材６が位置する構成の他の例が示される。波長変換部材６は、１枚の第３樹脂シート６８として構成される。第３樹脂シート６８は、発光素子３の上面３Ａと、素子基板２の上面２Ａの平面視において発光素子３と重なっていない部分の少なくとも一部とを覆う。第３樹脂シート６８は、平面視において発光素子３と重なる下面６Ａと、平面視において発光素子３と重ならない下面６Ｂとを有する。第３樹脂シート６８は、下面６Ａで発光素子３の上面３Ａに接着され、下面６Ｂで素子基板２の上面２Ａに接着されている。このようにすることで、波長変換部材６が１枚の第３樹脂シート６８で構成される簡易な構成であっても、発光装置１０は、波長変換部材６で生じた熱が素子基板２に拡散しやすくなるように構成され得る。 FIG. 8 shows another example of the configuration in which the wavelength conversion member 6 is located on the side surface 3B of the light emitting element 3. The wavelength conversion member 6 is configured as one third resin sheet 68. The third resin sheet 68 covers at least a part of the upper surface 3A of the light emitting element 3 and the portion of the upper surface 2A of the element substrate 2 that does not overlap with the light emitting element 3 in a plan view. The third resin sheet 68 has a lower surface 6A that overlaps with the light emitting element 3 in a plan view and a lower surface 6B that does not overlap with the light emitting element 3 in a plan view. The third resin sheet 68 is adhered to the upper surface 3A of the light emitting element 3 on the lower surface 6A, and is adhered to the upper surface 2A of the element substrate 2 on the lower surface 6B. By doing so, even if the wavelength conversion member 6 has a simple configuration composed of one third resin sheet 68, in the light emitting device 10, the heat generated by the wavelength conversion member 6 is transferred to the element substrate 2. It can be configured to facilitate diffusion.
　第３樹脂シート６８は、平面視において、発光素子３に重なる第１領域と、発光素子３に重ならない第２領域とを両方とも有する。第３樹脂シート６８は、第１領域に対応する第１部分６８１と、第２領域に対応する第２部分６８２とを有する。また、第３樹脂シート６８は、第１領域に対応する第１部分６８１と第２領域に対応する第２部分６８２との間に位置する第３部分６８３を更に有してよい。第３部分６８３は、発光装置１０の断面視において、第１部分６８１から第２部分６８２に向かって低くなるように傾斜する。第３部分６８３は、傾斜領域とも称される。発光装置１０の断面視は、ＹＺ平面で発光装置１０を切った断面をＸ軸の正の方向から観察することを意味する。 The third resin sheet 68 has both a first region that overlaps the light emitting element 3 and a second region that does not overlap the light emitting element 3 in a plan view. The third resin sheet 68 has a first portion 681 corresponding to the first region and a second portion 682 corresponding to the second region. Further, the third resin sheet 68 may further have a third portion 683 located between the first portion 681 corresponding to the first region and the second portion 682 corresponding to the second region. The third portion 683 is inclined so as to be lower toward the second portion 682 from the first portion 681 in the cross-sectional view of the light emitting device 10. The third portion 683 is also referred to as an inclined region. The cross-sectional view of the light emitting device 10 means that the cross section of the light emitting device 10 cut in the YZ plane is observed from the positive direction of the X axis.
　第３樹脂シート６８は、第３部分６８３において発光素子３の側面３Ｂの少なくとも一部と接触してもよい。第３樹脂シート６８は、第３部分６８３において発光素子３の側面３Ｂに接着されていてもよい。発光素子３が側面３Ｂからも励起光を射出する場合、励起光は第３部分６８３及び第２部分６８２にも入射しやすくなり、第３部分６８３及び第２部分６８２においても他の波長の光に変換される。その結果、励起光の変換効率が高まり得る。 The third resin sheet 68 may come into contact with at least a part of the side surface 3B of the light emitting element 3 in the third portion 683. The third resin sheet 68 may be adhered to the side surface 3B of the light emitting element 3 in the third portion 683. When the light emitting element 3 also emits the excitation light from the side surface 3B, the excitation light is likely to be incident on the third portion 683 and the second portion 682, and the light of other wavelengths is also easily incident on the third portion 683 and the second portion 682. Is converted to. As a result, the conversion efficiency of the excitation light can be increased.
　図９に示されるように、樹脂シートとして構成される波長変換部材６は、素子基板２の平面視において発光素子３に重ならない上面に、発光素子３と重なる部分から離れるほど低くなるように傾斜した上面を有してもよい。傾斜した上面は、傾斜面６Ｃと表されるとする。波長変換部材６の上面のうち平面視で発光素子３に重なる部分は第３上面６Ｄとも称される。傾斜面６Ｃの部分は、第４上面６Ｃとも称される。言い換えれば、第３上面６Ｄは、樹脂シートとして構成される波長変換部材６の平面視において発光素子３に重なる部分の上側に位置し、発光素子３の上面３Ａに沿って広がる。第４上面６Ｃは、第３上面６Ｄに交差し、発光素子３に重なる部分から離れるほど低くなるように傾斜している。また、平面視において波長変換部材６の端部は、波長変換部材６の中心よりも薄くなっているといえる。波長変換部材６は、端部に傾斜面６Ｃを有する場合、傾斜面６Ｃを有しない場合と比べて、広い角度で光を射出できる。つまり、波長変換部材６の配光角度が広くなる。 As shown in FIG. 9, the wavelength conversion member 6 configured as a resin sheet is inclined so as to be lowered toward the upper surface that does not overlap with the light emitting element 3 in the plan view of the element substrate 2 as the distance from the portion overlapping with the light emitting element 3 increases. It may have an upper surface. The inclined upper surface is represented as an inclined surface 6C. The portion of the upper surface of the wavelength conversion member 6 that overlaps the light emitting element 3 in a plan view is also referred to as a third upper surface 6D. The portion of the inclined surface 6C is also referred to as a fourth upper surface 6C. In other words, the third upper surface 6D is located above the portion overlapping the light emitting element 3 in the plan view of the wavelength conversion member 6 configured as the resin sheet, and extends along the upper surface 3A of the light emitting element 3. The fourth upper surface 6C intersects the third upper surface 6D and is inclined so as to be lower as the distance from the portion overlapping the light emitting element 3 increases. Further, it can be said that the end portion of the wavelength conversion member 6 is thinner than the center of the wavelength conversion member 6 in a plan view. When the wavelength conversion member 6 has the inclined surface 6C at the end, the light can be emitted at a wider angle as compared with the case where the inclined surface 6C is not provided. That is, the light distribution angle of the wavelength conversion member 6 becomes wide.
（照明装置２０の構成例）
　一実施形態に係る照明装置２０は、少なくとも１つの発光装置１０を備え、発光装置１０が射出する光を照明光として射出する。照明装置２０は、複数の発光装置１０を備える場合、各発光装置１０が射出する光の強度を独立に制御してもよいし、関連づけて制御してもよい。各発光装置１０が射出する光のスペクトルは、同じであってもよいし、互いに異なっていてもよい。照明装置２０は、各発光装置１０が射出する光の強度を関連づけて制御することによって、各発光装置１０が射出する光を合成した光のスペクトルを制御してもよい。各発光装置１０が射出する光を合成した光は、合成光とも称される。照明装置２０は、合成光を照明光として射出してもよい。照明装置２０は、複数の発光装置１０の少なくとも一部を選択して照明光を射出させてもよい。 (Configuration example of lighting device 20)
The lighting device 20 according to one embodiment includes at least one light emitting device 10, and emits light emitted by the light emitting device 10 as illumination light. When the lighting device 20 includes a plurality of light emitting devices 10, the intensity of the light emitted by each light emitting device 10 may be controlled independently or may be controlled in association with each other. The spectra of the light emitted by each light emitting device 10 may be the same or different from each other. The lighting device 20 may control the spectrum of the combined light emitted by each light emitting device 10 by controlling the intensity of the light emitted by each light emitting device 10 in association with each other. The light obtained by synthesizing the light emitted by each light emitting device 10 is also referred to as synthetic light. The lighting device 20 may emit synthetic light as illumination light. The lighting device 20 may select at least a part of the plurality of light emitting devices 10 to emit the lighting light.
　図１０に示されるように、照明装置２０は、発光装置１０が実装された実装板２５をさらに備えてよい。照明装置２０は、実装板２５を収容する溝状の部分を有する筐体２６と、筐体２６の短辺側の端部を塞ぐ一対の端板２７とをさらに備えてよい。実装板２５に実装されている発光装置１０の数は、１つであってもよいし、２つ以上であってもよい。発光装置１０は、実装板２５において、一列に並ぶように実装されてもよいし、格子状又は千鳥格子状に並ぶように実装されてもよい。発光装置１０は、これらのパターンに限られず、種々の配列パターンで実装板２５に実装されてよい。 As shown in FIG. 10, the lighting device 20 may further include a mounting plate 25 on which the light emitting device 10 is mounted. The lighting device 20 may further include a housing 26 having a groove-shaped portion for accommodating the mounting plate 25, and a pair of end plates 27 for closing the short side end portion of the housing 26. The number of light emitting devices 10 mounted on the mounting plate 25 may be one or two or more. The light emitting device 10 may be mounted on the mounting plate 25 so as to be lined up in a row, or may be mounted so as to be lined up in a grid pattern or a houndstooth pattern. The light emitting device 10 is not limited to these patterns, and may be mounted on the mounting plate 25 in various arrangement patterns.
　実装板２５は、配線パターンを有する回路基板を含んでもよい。回路基板は、例えば、リジッド基板、フレキシブル基板又はリジッドフレキシブル基板等のプリント基板を含んでよい。回路基板は、発光装置１０を制御する駆動回路を含んでもよい。 The mounting plate 25 may include a circuit board having a wiring pattern. The circuit board may include, for example, a printed circuit board such as a rigid board, a flexible board, or a rigid flexible board. The circuit board may include a drive circuit that controls the light emitting device 10.
　実装板２５は、発光装置１０が発する熱を外部に放散させる機能を有している。実装板２５は、例えば、アルミニウム、銅若しくはステンレス鋼等の金属材料、有機樹脂材料、又はこれらを含む複合材料等で構成されてよい。 The mounting plate 25 has a function of dissipating the heat generated by the light emitting device 10 to the outside. The mounting plate 25 may be made of, for example, a metal material such as aluminum, copper or stainless steel, an organic resin material, or a composite material containing these.
　実装板２５は、平面視において細長い長方形状を有してよい。実装板２５の形状は、これに限られず他の種々の形状であってもよい。 The mounting plate 25 may have an elongated rectangular shape in a plan view. The shape of the mounting plate 25 is not limited to this, and may be various other shapes.
　照明装置２０は、筐体２６の内部に収容されている実装板２５及び発光装置１０を封止する蓋部２８をさらに備えてよい。蓋部２８は、透光性を有する材料で構成されることによって、発光装置１０が射出する照明光を照明装置２０の外部に透過してよい。蓋部２８は、例えば、アクリル樹脂等の樹脂材料又はガラス等によって構成されてよい。蓋部２８は、平面視において細長い長方形状を有してよい。蓋部２８の形状は、これに限られず他の種々の形状であってもよい。照明装置２０は、蓋部２８と筐体２６との間にシーリング部材をさらに備えてもよい。このようにすることで、筐体２６の内部に水又は塵埃等が侵入しにくくなる。その結果、照明装置２０が設置される環境にかかわらず、照明装置２０の信頼性が向上しうる。照明装置２０は、筐体２６の内部に吸湿剤をさらに備えてもよい。 The lighting device 20 may further include a mounting plate 25 housed inside the housing 26 and a lid portion 28 for sealing the light emitting device 10. Since the lid portion 28 is made of a translucent material, the illumination light emitted by the light emitting device 10 may be transmitted to the outside of the illumination device 20. The lid portion 28 may be made of, for example, a resin material such as acrylic resin or glass. The lid portion 28 may have an elongated rectangular shape in a plan view. The shape of the lid portion 28 is not limited to this, and may be various other shapes. The illuminating device 20 may further include a sealing member between the lid 28 and the housing 26. By doing so, it becomes difficult for water, dust, or the like to enter the inside of the housing 26. As a result, the reliability of the lighting device 20 can be improved regardless of the environment in which the lighting device 20 is installed. The lighting device 20 may further include a hygroscopic agent inside the housing 26.
　本開示に係る実施形態について説明する図は模式的なものである。図面上の寸法比率等は、現実のものとは必ずしも一致していない。 The figure illustrating the embodiment according to the present disclosure is schematic. The dimensional ratios on the drawings do not always match the actual ones.
　本開示に係る実施形態について、諸図面及び実施例に基づき説明してきたが、本開示は上述の実施形態に限定されるものではない。また、当業者であれば本開示に基づき種々の変形又は改変を行うことが可能であることに留意されたい。従って、これらの変形又は改変は本開示の範囲に含まれることに留意されたい。例えば、各構成部等に含まれる機能等は論理的に矛盾しないように再配置可能であり、複数の構成部等を１つに組み合わせたり、或いは分割したりすることが可能である。その他、本開示の趣旨を逸脱しない範囲での変更が可能である。例えば、本開示にかかる実施形態において、枠体４の内壁は傾斜を有していないとして記載されている。発光装置のサイズによっては、枠体４は、内壁面が、素子基板２の上面２Ａから遠ざかるほど、外方に向かって広がるように傾斜していてもよい。この場合に内壁面は、発光素子３が発光する光を反射させる反射面として機能する。 Although the embodiments according to the present disclosure have been described based on the drawings and examples, the present disclosure is not limited to the above-described embodiments. Also, it should be noted that those skilled in the art can make various modifications or modifications based on the present disclosure. It should be noted, therefore, that these modifications or modifications are within the scope of this disclosure. For example, the functions and the like included in each component and the like can be rearranged so as not to be logically inconsistent, and a plurality of components and the like can be combined or divided into one. Other changes are possible without departing from the spirit of this disclosure. For example, in the embodiment according to the present disclosure, it is described that the inner wall of the frame body 4 does not have an inclination. Depending on the size of the light emitting device, the inner wall surface of the frame 4 may be inclined so as to spread outward as the inner wall surface moves away from the upper surface 2A of the element substrate 2. In this case, the inner wall surface functions as a reflecting surface that reflects the light emitted by the light emitting element 3.
　本開示において「第１」及び「第２」等の記載は、当該構成を区別するための識別子である。本開示における「第１」及び「第２」等の記載で区別された構成は、当該構成における番号を交換することができる。例えば、第１変換光は、第２変換光と識別子である「第１」と「第２」とを交換することができる。識別子の交換は同時に行われる。識別子の交換後も当該構成は区別される。識別子は削除してよい。識別子を削除した構成は、符号で区別される。本開示における「第１」及び「第２」等の識別子の記載のみに基づいて、当該構成の順序の解釈、小さい番号の識別子が存在することの根拠に利用してはならない。 In this disclosure, the descriptions such as "first" and "second" are identifiers for distinguishing the configuration. The configurations distinguished by the descriptions such as "first" and "second" in the present disclosure can exchange numbers in the configurations. For example, the first conversion light can exchange the identifiers "first" and "second" with the second conversion light. The exchange of identifiers takes place at the same time. Even after exchanging identifiers, the configuration is distinguished. The identifier may be deleted. Configurations with the identifier removed are distinguished by a code. Based solely on the description of identifiers such as "1st" and "2nd" in the present disclosure, it shall not be used as an interpretation of the order of the configurations or as a basis for the existence of identifiers with smaller numbers.
　本開示において、Ｘ軸、Ｙ軸、及びＺ軸は、説明の便宜上設けられたものであり、互いに入れ替えられてよい。本開示に係る構成は、Ｘ軸、Ｙ軸、及びＺ軸によって構成される直交座標系を用いて説明されてきた。本開示に係る各構成の位置関係は、直交関係にあると限定されるものではない。 In the present disclosure, the X-axis, the Y-axis, and the Z-axis are provided for convenience of explanation and may be interchanged with each other. The configuration according to the present disclosure has been described using a Cartesian coordinate system composed of X-axis, Y-axis, and Z-axis. The positional relationship of each configuration according to the present disclosure is not limited to being orthogonal.
　１０　発光装置
　２　素子基板（２Ａ：上面）
　３　発光素子（３Ａ：上面、３Ｂ：側面）
　４　枠体
　５　充填部材
　６　波長変換部材（６Ａ：下面、６Ｂ：下面、６Ｃ：傾斜面（第４上面）、６Ｄ：第３上面）
　７　実装基板
　２０　照明装置（２５：実装板、２６：筐体、２７：端板、２８：蓋部）
　６０　透光部材
　６１～６５　第１～第５蛍光体、
　６６　第１樹脂シート
　６７　第２樹脂シート
　６８　第３樹脂シート（６８１：第１部分、６８２：第２部分、６８３：第３部分） 10 Light emitting device 2 element substrate (2A: top surface)
3 Light emitting element (3A: top surface, 3B: side surface)
4 Frame 5 Filling member 6 Wavelength conversion member (6A: lower surface, 6B: lower surface, 6C: inclined surface (fourth upper surface), 6D: third upper surface)
7 Mounting board 20 Lighting device (25: mounting plate, 26: housing, 27: end plate, 28: lid)
60 Translucent member 61-65 1st to 5th phosphors,
66 1st resin sheet 67 2nd resin sheet 68 3rd resin sheet (681: 1st part, 682: 2nd part, 683: 3rd part)

Claims (14)

  1. 　第１上面を有する基板と、第２上面を有するとともに前記第１上面に位置する発光素子と、波長変換部材とを備え、
    　前記波長変換部材の少なくとも一部は、前記発光素子の前記第２上面に接触している、
    発光装置。     A substrate having a first upper surface, a light emitting element having a second upper surface and located on the first upper surface, and a wavelength conversion member are provided.
    At least a part of the wavelength conversion member is in contact with the second upper surface of the light emitting element.
    Light emitting device.
  2. 　前記波長変換部材は、蛍光体を含む樹脂シートを有し、
    　前記樹脂シートは、前記発光素子の前記第２上面に接着している、請求項１に記載の発光装置。     The wavelength conversion member has a resin sheet containing a phosphor and has.
    The light emitting device according to claim 1, wherein the resin sheet is adhered to the second upper surface of the light emitting element.
  3. 　前記樹脂シートの端部は、前記樹脂シートの中心よりも薄くなっている、請求項２に記載の発光装置。 The light emitting device according to claim 2, wherein the end portion of the resin sheet is thinner than the center of the resin sheet.
  4. 　前記樹脂シートは、前記基板の平面視において、前記発光素子に重なる第１領域と、前記発光素子に重ならない第２領域とを有している、請求項２又は３に記載の発光装置。 The light emitting device according to claim 2 or 3, wherein the resin sheet has a first region that overlaps with the light emitting element and a second region that does not overlap with the light emitting element in a plan view of the substrate.
  5. 　前記第２領域の上面は、前記発光素子と重なる部分から離れるほど低くなる傾斜面を有する、請求項４に記載の発光装置。 The light emitting device according to claim 4, wherein the upper surface of the second region has an inclined surface that becomes lower as the distance from the portion overlapping the light emitting element increases.
  6. 　前記樹脂シートは、前記第１領域の上側に位置し、前記発光素子の前記第２上面に沿って広がる第３上面と、前記第３上面に交差し、前記発光素子に重なる部分から離れるほど低くなるように傾斜する第４上面とを有する、請求項４又は５に記載の発光装置。 The resin sheet is located on the upper side of the first region, intersects the third upper surface extending along the second upper surface of the light emitting element, intersects the third upper surface, and becomes lower as it is separated from the portion overlapping the light emitting element. The light emitting device according to claim 4 or 5, which has a fourth upper surface that is inclined so as to be.
  7. 　前記樹脂シートは、前記第２領域に位置する少なくとも一部が前記基板に接着されている、請求項４から６までのいずれか一項に記載の発光装置。 The light emitting device according to any one of claims 4 to 6, wherein at least a part of the resin sheet located in the second region is adhered to the substrate.
  8. 　前記樹脂シートは、積層する第１樹脂シートと第２樹脂シートとを含んで構成され、
    　前記第１樹脂シートは、前記第１領域を有し、
    　前記第２樹脂シートは、前記第２領域を有している、請求項４から７までのいずれか一項に記載の発光装置。     The resin sheet is composed of a first resin sheet and a second resin sheet to be laminated.
    The first resin sheet has the first region and has the first region.
    The light emitting device according to any one of claims 4 to 7, wherein the second resin sheet has the second region.
  9. 　前記樹脂シートは、前記第１領域及び前記第２領域を有する第３樹脂シートを含んで構成される、請求項４から７までのいずれか一項に記載の発光装置。 The light emitting device according to any one of claims 4 to 7, wherein the resin sheet includes a third resin sheet having the first region and the second region.
  10. 　前記第３樹脂シートは、前記基板の断面視において、前記第１領域と前記第２領域の間に位置するとともに、前記発光素子の前記第２上面から前記基板の前記第１上面に向かって低くなるように傾斜する傾斜領域を有する、請求項９に記載の発光装置。 The third resin sheet is located between the first region and the second region in the cross-sectional view of the substrate, and is lowered from the second upper surface of the light emitting element toward the first upper surface of the substrate. The light emitting device according to claim 9, which has an inclined region that is inclined so as to be.
  11. 　前記樹脂シートは、前記発光素子の側面に更に接触している、請求項２から１０までのいずれか一項に記載の発光装置。 The light emitting device according to any one of claims 2 to 10, wherein the resin sheet is in further contact with the side surface of the light emitting element.
  12. 　前記発光素子は、励起光のピーク波長が３６０ｎｍ以上かつ４３０ｎｍ以下である、請求項１から１１までのいずれか一項に記載の発光装置。 The light emitting device according to any one of claims 1 to 11, wherein the light emitting element has a peak wavelength of excitation light of 360 nm or more and 430 nm or less.
  13. 　前記基板は、窒化アルミニウムまたは炭化ケイ素を含んでいる、請求項１から１２までのいずれか一項に記載の発光装置。 The light emitting device according to any one of claims 1 to 12, wherein the substrate contains aluminum nitride or silicon carbide.
  14. 　第１上面を有する基板と、第２上面を有するとともに前記第１上面に位置する発光素子と、波長変換部材とを有する発光装置を備え、
    　前記波長変換部材の少なくとも一部は、前記発光素子の前記第２上面に接触している、照明装置。     A light emitting device having a substrate having a first upper surface, a light emitting element having a second upper surface and located on the first upper surface, and a wavelength conversion member is provided.
    A lighting device in which at least a part of the wavelength conversion member is in contact with the second upper surface of the light emitting element.
PCT/JP2021/024035 2020-06-29 2021-06-24 Light-emitting device and illumination device WO2022004564A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020112080 2020-06-29
JP2020-112080 2020-06-29

Publications (1)

Publication Number Publication Date
WO2022004564A1 true WO2022004564A1 (en) 2022-01-06

Family

ID=79316009

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/024035 WO2022004564A1 (en) 2020-06-29 2021-06-24 Light-emitting device and illumination device

Country Status (1)

Country Link
WO (1) WO2022004564A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015119096A (en) * 2013-12-19 2015-06-25 株式会社タムラ製作所 Light-emitting device
US20170005245A1 (en) * 2015-07-02 2017-01-05 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light Emitting Diode Package Structure and Fabrication Method
JP2017112146A (en) * 2015-12-14 2017-06-22 日東電工株式会社 Covered optical semiconductor element production method
JP2019509639A (en) * 2016-03-11 2019-04-04 ロヒンニ リミテッド ライアビリティ カンパニー Method and apparatus for attaching phosphor to light emitting diode
JP2020080431A (en) * 2016-07-29 2020-05-28 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015119096A (en) * 2013-12-19 2015-06-25 株式会社タムラ製作所 Light-emitting device
US20170005245A1 (en) * 2015-07-02 2017-01-05 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light Emitting Diode Package Structure and Fabrication Method
JP2017112146A (en) * 2015-12-14 2017-06-22 日東電工株式会社 Covered optical semiconductor element production method
JP2019509639A (en) * 2016-03-11 2019-04-04 ロヒンニ リミテッド ライアビリティ カンパニー Method and apparatus for attaching phosphor to light emitting diode
JP2020080431A (en) * 2016-07-29 2020-05-28 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same

Similar Documents

Publication Publication Date Title
US9525115B2 (en) Light emitting device
KR100620844B1 (en) Light-emitting apparatus and illuminating apparatus
JP4598767B2 (en) Semiconductor light emitting device, light emitting module, and lighting device
EP2038939B1 (en) Efficient emitting led package and method for efficiently emitting light
TWI545808B (en) Producing method of light emitting element transfer sheet, producing method of light emitting device, light emitting element transfer sheet, and light emitting device
EP2128906B1 (en) Light-emitting device
JP2020129684A (en) Indoor light source and lighting system
JP2011105951A (en) Material of fluorescent substance
WO2010068886A1 (en) Systems and methods for packaging light-emitting diode devices
US20110272713A1 (en) Optoelectronic component
JP2010157638A (en) Light emitting device, and method of manufacturing the same
JP2009295892A (en) Light-emitting device
JP2007243056A (en) Light emitting device
JP5658462B2 (en) Lighting device
JP2018129492A (en) Light-emitting device, and illuminating device
WO2022004564A1 (en) Light-emitting device and illumination device
JP5034342B2 (en) Light emitting device
JP2012094678A (en) Light emitting device
JP7027161B2 (en) Lighting equipment and lighting modules
JP5683352B2 (en) LIGHT EMITTING DEVICE AND LIGHTING DEVICE USING THE SAME
WO2022025065A1 (en) Light emitting device and illumination device
WO2022114086A1 (en) Light emitting apparatus and illumination apparatus
JP2014160811A (en) Light-emitting device
JP7274013B2 (en) lighting devices and lighting modules
WO2023054199A1 (en) Light emitting apparatus and illumination apparatus

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21832004

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21832004

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP