WO2022002420A1 - Appareil de dépôt de matériau, système de traitement de substrat et procédé de traitement de substrat - Google Patents

Appareil de dépôt de matériau, système de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2022002420A1
WO2022002420A1 PCT/EP2020/074641 EP2020074641W WO2022002420A1 WO 2022002420 A1 WO2022002420 A1 WO 2022002420A1 EP 2020074641 W EP2020074641 W EP 2020074641W WO 2022002420 A1 WO2022002420 A1 WO 2022002420A1
Authority
WO
WIPO (PCT)
Prior art keywords
support body
substrate
actuator assembly
orientation
coupled
Prior art date
Application number
PCT/EP2020/074641
Other languages
English (en)
Inventor
Ralph Lindenberg
Suhas Bhoski
Joachim Sonnenschein
Simon Lau
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN202080100206.5A priority Critical patent/CN115443529A/zh
Priority to KR1020227037661A priority patent/KR20220158829A/ko
Publication of WO2022002420A1 publication Critical patent/WO2022002420A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Definitions

  • Embodiments of the present disclosure relate to vertical substrate processing in a cluster tool, particularly in a cluster tool with horizontal substrate handling.
  • Embodiments of the present disclosure relate to apparatuses for moving a substrate relative to a processing area and to deposition apparatuses for depositing material on a substrate.
  • Embodiments of the present disclosure also relate to an independently movable tilt table drive, particularly for large area substrates.
  • embodiments relate to an apparatus for material deposition, a substrate processing system, and a method of substrate processing in a vacuum chamber.
  • a substrate may be coated by using an evaporation process, a physical vapor deposition (PVD) process, such as a sputtering process, a spraying process, etc., or a chemical vapor deposition (CVD) process.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • a substrate on which material is deposited i.e. a substrate to be coated, is introduced into a vacuum chamber of a vacuum processing system and is positioned relative to a processing area of the vacuum chamber of the vacuum processing system.
  • a coating process can take place in the vacuum chamber.
  • material is ejected from a target positioned in the vacuum chamber.
  • the material is deposited onto the substrate.
  • the material ejection from the target can be provided in the vacuum chamber by bombarding the target with ions generated in a plasma region.
  • atoms of the target material are dislodged from a surface of the target and then the dislodged atoms form a material layer on the substrate.
  • the dislodged atoms can react with a gas in the plasma region, for example nitrogen or oxygen, to form an oxide, a nitride or an oxynitride of the target material on the substrate.
  • the target typically forms a sputter cathode with the application of an electric potential difference, such that in the presence of the resulting electric field, ions generated in the plasma region accelerate or move towards the electrically charged sputter cathode and impact on said sputter cathode such that atoms from the cathode are dislodged.
  • the sputter cathode thus provides the material for the material deposition and thus forms a material source. Further, other processes like etching, structuring, annealing, or the like can be further conducted in processing chambers.
  • Coating processes i.e. material deposition processes
  • large area substrates e.g. in display manufacturing technology.
  • Coated substrates can be used further in several technical fields with applications e.g. in microelectronics, in the production of semiconductor devices, for substrates with thin film transistors, but also for insulating panels, etc.
  • the tendency towards larger substrates, e.g. in manufacturing larger displays results in larger vacuum processing systems.
  • an apparatus for material deposition includes a vacuum chamber having at least a first wall; a support body for holding a substrate within the vacuum chamber; a first actuator assembly coupled to the support body and configured for a linear movement of the support body between a first position and a second position; and a second actuator assembly including a tilt drive and a torque support element, the torque support element being coupled to the at least first wall.
  • the second actuator assembly is configured to move the support body by an angle between a loading orientation and a processing orientation.
  • the tilt drive and the torque support element are directly or indirectly coupled to the first actuator assembly to be moveable with the support body.
  • a substrate processing system includes a transfer chamber; and one or more apparatuses for material deposition according to any of the embodiments described herein and coupled to the transfer chamber.
  • a method of substrate processing in a vacuum chamber includes moving a support body for holding a substrate by an angle between a loading orientation and a processing orientation with a tilt drive; translating the tilt drive and the support body supporting a substrate in an essentially vertical processing orientation with a first actuator assembly; and depositing materials with a source assembly on the substrate.
  • FIG. 1 shows a schematic sectional side view of an apparatus for material deposition according to embodiments of the present disclosure
  • FIG. 2 shows a further schematic sectional side view of an apparatus for material deposition according to embodiments of the present disclosure
  • FIG. 3 shows a schematic view of a portion of the apparatus for material deposition shown in FIG. 2 and according to embodiments of the present disclosure
  • FIG. 4 shows a further schematic sectional side view of an apparatus for material deposition according to embodiments of the present disclosure
  • FIG. 5 schematically shows a processing system containing at least a deposition apparatus according to embodiments of the present disclosure
  • FIG. 6 shows a flow chart illustrating one or more methods of substrate processing in a vacuum chamber according to embodiments of the present disclosure.
  • substrate may particularly embrace substrates like glass substrates for display manufacturing and may also embrace substrates like wafers, slices of transparent crystal such as sapphire or the like.
  • substrate may embrace other substrates that can be inflexible or flexible, like e.g. a foil or a web.
  • the substrate may be formed by any material suitable for material deposition.
  • Embodiments of the present disclosure relate to a movable tilt drive, particularly an independently movable tilt drive.
  • the tilt drive can be configured to move the support body, for example, a substrate support table, particularly for large area substrates, by an angle of essentially 90°.
  • the tilt drive can be movable together with the support body, particularly in a bidirectional transversal direction.
  • an apparatus for material deposition includes a vacuum chamber having at least a first wall and a support body for holding a substrate within the vacuum chamber.
  • a first actuator assembly is coupled to the support body and is configured for a linear movement of the support body between a first position and a second position.
  • a second actuator assembly includes a tilt drive and a torque support element.
  • the torque support element is coupled to the at least first wall and the second actuator assembly is configured to move the support body by an angle between a loading orientation and a processing orientation.
  • the tilt drive and the torque support element are directly or indirectly coupled to the first actuator assembly to be moveable with the support body.
  • the second actuator is configured to move the support body by the angle from an essentially horizontal loading orientation to an essentially vertical processing orientation.
  • FIG. 1 shows a schematic view of an apparatus 100 for material deposition on a substrate 190.
  • a substrate is moved relative to a processing area 131 inside a vacuum chamber 110.
  • FIG. 1 shows a material deposition source 120.
  • the material deposition source 120 is a sputter cathode of an array of cathodes, such as rotatable sputter cathodes.
  • the processing area 131 is provided in an area in front of the material deposition source 120.
  • the material deposition source may be a cathode of a cathode array for processing the substrate and in particular for processing one surface of the substrate.
  • the sources may provide the ejected material 130 as shown in FIG. 1.
  • the apparatus 100 for material deposition on a substrate 190 includes the vacuum chamber 110.
  • the substrate 190 can be supported by a support body 140.
  • the support body 140 may include a support surface 144.
  • the support body 140 is located inside the vacuum chamber 110.
  • the apparatus includes a shaft 142 coupled to the support surface 144.
  • the shaft extends outside the vacuum chamber 110.
  • the shaft 142 is a hollow tube.
  • cables and/or pipes may be provided in the hollow tube.
  • the hollow tube or hollow shaft can be provided as a media guide from outside the vacuum chamber 110 to inside the vacuum chamber 110, and vice versa.
  • the support body 140 can include a plurality of elements, such as the support surface 144, the shaft 142, clamps 146, etc.
  • a vacuum condition V may be provided, in particular during material deposition onto a substrate.
  • atmospheric conditions A may be provided outside the vacuum chamber 110.
  • the apparatus 100 for material deposition further includes at least a first drive or a first actuator assembly to move the substrate along an array of deposition sources.
  • a tilt drive for example of a second actuator assembly
  • the second actuator assembly is configured to move the support body 140 by an angle 150 as illustrated in FIG. 1.
  • the second actuator assembly moves the support body from a loading orientation, i.e. an orientation in which the substrate is loaded or unloaded from the support body.
  • the loading orientation is a non-vertical orientation, i.e. an essentially horizontal orientation.
  • the second actuator assembly moves the support body between the loading orientation and a processing orientation.
  • the processing orientation is shown with dash-dotted lines in FIG. 1.
  • the processing orientation is a non-horizontal orientation, i.e. an essentially vertical orientation.
  • an essentially vertical or essentially horizontal orientation may deviate from a vertical or horizontal orientation, respectfully, by +- 15°.
  • the one or more deposition sources may remain fixed with respect to the vacuum chamber during material deposition.
  • the y axis of e.g. a Cartesian coordinate system is typically oriented with a vertical orientation or an essentially vertical (vertical +-15°) orientation.
  • an essentially horizontal orientation may include the deviation of +- 15°.
  • FIG. 1 shows the substrate 190 supported on the support surface 144 of the support body 140.
  • the substrate 190 is partially covered by the mask system 145.
  • the mask system 145 may include an edge exclusion mask covering an edge portion of the substrate 190.
  • an edge of 0.3 mm to a few mm of the substrate for example, a large area substrate for display manufacturing, may be covered by the edge exclusion mask to prevent material deposition on the perimeter of the substrate.
  • Embodiments described herein particularly relate to deposition of materials, e.g. for display manufacturing on large area substrates.
  • large area substrates or carriers supporting one or more substrates may have a size of at least 0.5 m 2
  • the deposition system may be adapted for processing large area substrates, such as substrates of GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m x 3.05 m).
  • Clamps 146 hold the substrate 190 to the support body 140.
  • the substrate 190 may be loaded on the support body, for example, a pin array on the support body.
  • the substrate may be aligned relative to the support body 140 and, thus, relative to the mask system 145. Thereafter, the substrate 190 can be clamped to the support body with clamps 146.
  • the substrate is moved by an angle 150 from the loading orientation, i.e. an essentially horizontal orientation, to a processing orientation, i.e. an essentially vertical orientation.
  • the substrate is provided in the processing area 131, for example, in front of one or more material deposition sources 120.
  • a movable shield assembly 160 is provided within the vacuum chamber 110.
  • a static shield assembly 170 is provided within the vacuum chamber 110.
  • the mask system can include clamps 146 or the mask system can be configured to clamp the substrate 190 to the support body when the mask system is provided to mask the substrate.
  • the clamps may be integrated in the mask system.
  • the support body 140, the mask system 145, and the movable shield assembly 160 can be coupled to the first actuator assembly to move the support body, the mask system and the movable shield assembly relative to the one or more material deposition sources 120.
  • the static shield assembly 170 remains static within the vacuum chamber 110.
  • the movable shield assembly 160 and the static shield assembly 170 are provided to reduce or prevent deposition of material on interior surfaces of the vacuum chamber and/or on other components provided within the vacuum chamber 110
  • FIG. 1 shows a guide system 180 for the movable shield assembly 160 and the support body.
  • the movable shield assembly may include a guide system at one of the lower side or the upper side, particularly the lower side. Accordingly, a guide system at the upper side as shown in FIG. 1 may be omitted.
  • FIG. 2 shows a further schematic sectional view of a portion of an apparatus for material deposition.
  • FIG. 2 shows the vacuum chamber 110.
  • the static shield assembly 170 is provided in front of the movable shield assembly 160 in FIG. 2.
  • the support surface 144 of the support body is behind the movable shield assembly 160 in FIG. 2.
  • a first actuator assembly 240 is provided outside the vacuum chamber 110.
  • the first actuator assembly 240 can be coupled to the shaft 142 (see FIG. 1), for example, a tilt shaft.
  • the first actuator assembly can move the support body and, thus, the support surface 144 relative to the vacuum chamber 110.
  • the movement can be a bidirectional linear movement, for example, a horizontal left-right-movement in FIG. 2. This is indicated by arrow 244.
  • a substrate supported on the support surface 144 can be moved past an array of rotatable sputter cathodes by the first actuator assembly 240.
  • a tilt table sweep drive can be provided.
  • an apparatus for material deposition can include an array of rotatable sputter cathodes.
  • the array can be stationary within the vacuum chamber and/or magnetron assemblies in the rotatable sputter cathodes are stationary within the vacuum chamber.
  • FIG. 2 shows a second actuator assembly 250.
  • the second actuator assembly 250 is coupled to the tilt shaft.
  • the second actuator assembly 250 can rest on the tilt shaft, which is moved by the first actuator assembly 240.
  • the weight of the second actuator is supported by the tilt shaft. Accordingly, upon movement of the tilt shaft by the first actuator assembly 240, the second actuator assembly 250 is moved together with the tilt shaft. This is indicated by arrow 251 in FIG. 2.
  • a movable actuator assembly for tilting of the support body such as a tilt table, is provided.
  • the first actuator assembly can be coupled to a tilt shaft and the weight of the second actuator is supported by the tilt shaft.
  • the second actuator assembly 250 includes a tilt drive 252 and a torque support element 254.
  • the torque support element 254 is coupled to the wall 212 of the vacuum chamber 110.
  • the torque support element 254 can be coupled to the wall 212 via a linear guide 258.
  • the tilt table i.e. the support body having the support surface 144 can be moved by an angle between the loading orientation and the processing orientation.
  • the support surface 144 can be moved between the horizontal orientation and the vertical orientation.
  • the action force of the tilt drive 252 and the weight of the second actuator assembly 250 results in a reaction force within the second actuator assembly 250, and particularly within the support body 256 of the second actuator assembly 250.
  • a torque is provided on the tilt shaft for movement of the tilt table.
  • the second actuator assembly 250 can be considered a transmission, wherein the forces are within the transmission except for the torque provided by the torque support element 254 to the vacuum chamber 110.
  • the transmission i.e. the second actuator assembly provides a closed loop for the forces with the exception of the torque support.
  • the transmission for tilting of the support body is movable, particularly, by a linear movement with the tilt shaft.
  • the second actuator assembly allows for reduced backlash when tilting the support body, i.e. the substrate support table. An improved position accuracy can be provided, particularly at reduced cost of ownership as compared to a backlash reduced motor-gear box- combination.
  • FIG. 3 shows an enlarged view of the tilt actuation according to some embodiments of the present disclosure.
  • the support body 256 is supported on the shaft 142 by bearings 356.
  • a lever 352 is coupled to the shaft 142 for rotation of the shaft.
  • the support body for the substrate i.e. the tilt table
  • the support body 256 and the lever 352 allow for guidance close to the point of gravity and/or the load point of the second actuator assembly.
  • the second actuator assembly can be supported by the tilt shaft for tilting the substrate support table.
  • the shaft extends from outside the vacuum chamber into the vacuum chamber.
  • a magnetic fluid feedthrough 372 and a bellows 374 can be provided to allow for extension of the tilt shaft into the vacuum chamber and for linear movement of the shaft, respectively.
  • the second actuator assembly further comprises a lever coupled to the spindle drive, i.e. a linear drive.
  • a linear drive for tilt movement of an angle of about 90° can be provided.
  • a linear motion of a spindle drive may be provided to tilt the substrate support table between a loading orientation and a processing orientation.
  • the shaft 142 is supported by a primary bearing 312, for example, a main bearing and a secondary bearing 314.
  • the primary bearing 312 can be provided between the secondary bearing 314 and the second actuator assembly.
  • the primary bearing is provided on a side of the tilt table facing the second actuator assembly. Due to the weight of the second actuator assembly, the primary bearing or main bearing can be larger than the secondary bearing and/or maybe configured to support a higher weight as compared to the secondary bearing.
  • the primary bearing and the secondary bearing can be movable within the vacuum chamber 110.
  • the primary bearing and the secondary bearing can be provided on a linear guide system.
  • the respective linear guide systems may include a linear guide support 332 and a linear guide carrier 334.
  • magnets 336 can be provided in the linear guide system. The magnets may counteract the weight of the components supported by the bearings. Accordingly, particle generation at the linear guide system can be reduced.
  • magnets 336 can be provided for the primary bearing 312. Due to the increased load on the primary bearing, counteracting the load by magnets may be particularly useful for the primary bearing.
  • the secondary bearing may be provided with or without magnets.
  • the bearings, and particularly the primary bearing can be separated from the magnetic fluid feedthrough 372.
  • FIG. 4 shows the side view of an apparatus for material deposition according to embodiments of the present disclosure.
  • the tilt drive 252 of the second actuator assembly 250 is coupled to the lever 352.
  • the lever 352 rotates the shaft 142.
  • the tilt drive can be a linear drive, such as a spindle drive.
  • the action force of the spindle drive rotates the shaft 142.
  • Reaction forces are taken up by the support body 256 of the second actuator assembly 250.
  • the torque generated on the shaft 142 upon actuation of the tilt drive 252 is taken up by the torque support element 254.
  • the torque support element 254 can slide along the direction in which the shaft extends upon actuation of the first actuator assembly.
  • the torque support element transfers the torque to the vacuum chamber 110.
  • the first actuator assembly 240 can include a linear drive 440.
  • the linear drive can be a spindle drive.
  • the linear drive can be configured for a bidirectional linear movement of the second actuator assembly together with the shaft 142 and, thus, the support body configured to support the substrate. Accordingly, with reference to FIG. 2, the tilt drive 252 and the torque support element 254 can be moved as indicated by arrow 251.
  • the torque support element is coupled to the at least a first wall 212 of the vacuum chamber 110 via a linear guide 258.
  • Embodiments of the present disclosure may include an independently movable tilt table drive.
  • the tilt table drive for example, the second actuator assembly can be movable as one compact unit. Particularly applications having a tilting movement and at the same time a transversal movement may benefit from the compact design of the tilt table drive supported on the tilt shaft.
  • the support body of the tilt table drive for example the support body 256 of the second actuator assembly described herein, can provide a reduced size while having beneficial stiffness properties. Accordingly, high precision and low vibrations can be provided. Since the second actuator assembly according to embodiments of the present disclosure is movable as an independent unit, the second actuator assembly can be combined with other movements, i.e. a bidirectional linear movement as described herein.
  • the compact design of the tilt drive, the lever and the support body of the actuator assembly provides an independently movable tilt table actuation.
  • the first actuator assembly and the second actuator assembly provide a separated functionality.
  • the second actuator assembly can be moved upon actuation of the first actuator assembly. Since the linear movement or sweep movement of the first actuator assembly and the tilt movement of the second actuator assembly are separated, i.e. have a separate functionality, and are independent from each other, the complexity of the motion mechanisms can be reduced.
  • FIG. 5 schematically shows a processing system 500 including one or more apparatuses for material deposition according to the present disclosure.
  • the one or more deposition apparatuses are intended for the deposition of material on a substrate.
  • the processing system 500 further includes a vacuum transfer chamber 310 coupled to the one or more deposition apparatuses.
  • the one or more apparatuses for material deposition include a motion mechanism 200 including a first actuator assembly and a second actuator assembly as described herein.
  • FIG. 5 further shows a load lock chamber 320.
  • the vacuum transfer chamber 310 is coupled to the load lock chamber 320.
  • the vacuum transfer chamber can move substrates between the one or more vacuum chambers 110 and/or between a vacuum chamber 110 and a load lock chamber through openings.
  • the processing system 500 for example, a vacuum processing system, may include one or more support chambers 340 arranged to perform specific additional functions like storage of substrates.
  • the processing system may include one or more load lock chambers 320 that are configured to receive a substrate under atmospheric pressure or not under vacuum conditions A and then to transfer the substrate into the vacuum transfer chamber under vacuum conditions V.
  • the load chamber may also receive a substrate from the transfer chamber under a vacuum condition V and provide said substrate under atmospheric pressure or not under vacuum conditions A.
  • a mechanism such as a robot, is configured to transfer the substrate to vacuum chambers 110 adjacent to the vacuum transfer chamber 310 for processing and/or storage.
  • the storage may take place in one or more support chambers 340.
  • the substrate is transferred from the vacuum transfer chamber 310 to vacuum chambers 110 and/or to support chambers 340 through openings with a robot or the like.
  • a vacuum condition V is maintained inside the processing system 500 with the exception of load lock chambers 320, wherein a change from vacuum conditions V to atmospheric conditions or non-vacuum conditions A and vice versa is possible in order to insert and/or remove the substrate before or after processing without affecting the vacuum V in other parts of the processing system 500 and in particular in the vacuum chambers 110, and in the vacuum transfer chamber 310 of the processing system 500.
  • substrates are introduced into the processing system 500 through a load lock chamber 320 in a horizontal position and may optionally be temporarily horizontally stored in one or more support chambers 340 before or after a processing in vacuum chambers 110 of the processing system 500. Substrates may be transferred back and forth between the one or more vacuum chambers 110 and/or between vacuum chambers 110 and the support chamber 340 of the processing system 500.
  • the substrate is moved by an angle 150 from a horizontal position to a vertical position for the deposition of a material layer by the apparatus for material deposition.
  • the substrate is swept during material deposition by a translational movement for obtaining a more uniform layer of deposited material preventing or reducing mura.
  • the material to be deposited on a substrate can be indium gallium zinc oxide (IGZO).
  • IGZO indium gallium zinc oxide
  • the substrate is transferred back into a horizontal position and then moved back into the vacuum transfer chamber 310 from the vacuum chamber 110 where processing took place.
  • the substrate may be transferred into a further vacuum chamber 110, into a support chamber 340 and/or into a load lock chamber 320 where the substrate may be transferred back to non-vacuum conditions or atmospheric conditions A.
  • a substrate processing system includes a transfer chamber and one or more apparatuses for material deposition.
  • An apparatus for material deposition includes a vacuum chamber having at least a first wall and a support body for holding a substrate within the vacuum chamber.
  • a first actuator assembly is coupled to the support body and is configured for a linear movement of the support body between a first position and a second position.
  • a second actuator assembly includes a tilt drive and a torque support element.
  • the torque support element is coupled to the at least first wall and the second actuator assembly is configured to move the support body by an angle between a loading orientation and a processing orientation.
  • the tilt drive and the torque support element are directly or indirectly coupled to the first actuator assembly to be moveable with the support body.
  • the second actuator is configured to move the support body by the angle from an essentially horizontal loading orientation to an essentially vertical processing orientation.
  • At least one load lock chamber can be coupled to the transfer chamber.
  • the transfer chamber can be a central transfer chamber.
  • FIG. 6 shows a flow chart illustrating a method of substrate processing in a vacuum chamber.
  • a support body for holding a substrate for example, a substrate support table
  • the substrate can be loaded at an essentially horizontal loading orientation.
  • the tilt drive or tilt table drive can be moved by, for example, 90° to an essentially vertical processing orientation for processing of the substrate.
  • the substrate is moved past an array of deposition sources.
  • the tilt drive and the support body supporting a substrate is translated in an essentially vertical processing orientation with a first actuator assembly.
  • material is deposited with a source assembly on the substrate.
  • the tilt drive can move the substrate support table by an angle of, for example 90° from the essentially vertical processing orientation to the essentially horizontal loading orientation for unloading of the substrate.
  • the material deposited on the substrate can be indium gallium zinc oxide (IGZO).
  • IGZO indium gallium zinc oxide
  • the sweeping movement past an area of deposition sources, for example, rotatable sputter cathodes can be particularly beneficial for the deposition of IGZO.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention concerne un appareil permettant le dépôt de matériau. L'appareil comprend une chambre à vide ayant au moins une première paroi ; un corps de support permettant de maintenir un substrat à l'intérieur de la chambre à vide ; un premier ensemble actionneur couplé au corps de support et configuré pour un mouvement linéaire du corps de support entre une première position et une seconde position ; et un second ensemble actionneur comprenant un entraînement d'inclinaison et un élément de support de couple, l'élément de support de couple étant couplé à la ou aux premières parois. Le second ensemble actionneur est configuré pour déplacer le corps de support d'un angle entre une orientation de chargement et une orientation de traitement. L'entraînement d'inclinaison et l'élément de support de couple sont couplés directement ou indirectement au premier ensemble actionneur pour être mobile avec le corps de support.
PCT/EP2020/074641 2020-07-01 2020-09-03 Appareil de dépôt de matériau, système de traitement de substrat et procédé de traitement de substrat WO2022002420A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202080100206.5A CN115443529A (zh) 2020-07-01 2020-09-03 用于材料沉积的设备、基板处理系统和基板处理的方法
KR1020227037661A KR20220158829A (ko) 2020-07-01 2020-09-03 재료 증착을 위한 장치, 기판 프로세싱 시스템, 및 기판 프로세싱 방법

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IN202041027996 2020-07-01
IN202041027996 2020-07-01

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WO2022002420A1 true WO2022002420A1 (fr) 2022-01-06

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020005251A1 (fr) * 2018-06-28 2020-01-02 Applied Materials, Inc. Appareil oscillant, procédé de traitement d'un substrat, module oscillant pour recevoir un substrat à partir d'une chambre de transfert, et système de traitement sous vide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020005251A1 (fr) * 2018-06-28 2020-01-02 Applied Materials, Inc. Appareil oscillant, procédé de traitement d'un substrat, module oscillant pour recevoir un substrat à partir d'une chambre de transfert, et système de traitement sous vide

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