WO2022002182A1 - 激光干涉光刻中光束入射角的调控装置及方法 - Google Patents

激光干涉光刻中光束入射角的调控装置及方法 Download PDF

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Publication number
WO2022002182A1
WO2022002182A1 PCT/CN2021/103935 CN2021103935W WO2022002182A1 WO 2022002182 A1 WO2022002182 A1 WO 2022002182A1 CN 2021103935 W CN2021103935 W CN 2021103935W WO 2022002182 A1 WO2022002182 A1 WO 2022002182A1
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Prior art keywords
lens
mirror
position detector
measurement result
incident angle
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PCT/CN2021/103935
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English (en)
French (fr)
Inventor
王磊杰
朱煜
张鸣
成荣
杨月舳
李鑫
杨开明
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Tsinghua University
Beijing U Precision Tech Co Ltd
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Tsinghua University
Beijing U Precision Tech Co Ltd
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Priority to US18/004,083 priority Critical patent/US12346030B2/en
Publication of WO2022002182A1 publication Critical patent/WO2022002182A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/12—Beam splitting or combining systems operating by refraction only
    • G02B27/126—The splitting element being a prism or prismatic array, including systems based on total internal reflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems

Definitions

  • the invention belongs to the technical field of lithography, and in particular, relates to a device and method for regulating the incident angle of a beam in laser interference lithography.
  • Laser interference lithography uses the interference and diffraction characteristics of light to control the interference pattern by combining beams, and has broad application prospects in the fields of microelectronics, subwavelength gratings, microlens arrays, and nanopattern manufacturing.
  • the periodic intercept of the interference grating pattern is directly determined by the incident angle of the exposure light path.
  • the precise measurement and regulation of the incident angle of the exposure light path is particularly important.
  • US Patent Publication No. US6,882,477B1 discloses a solution for measuring and regulating the incident angle of exposure beam in a laser interference lithography system.
  • the beam exposure optical path is at the spot position and incident angle of the exposure substrate.
  • Each optical path is reflected by two two-axis driving mirrors in turn and then incident on the substrate.
  • Four driving adjustments can control the optical path including four degrees of freedom of position and angle.
  • this device can accurately measure and control the position and orientation of the exposure optical path, the device structure is relatively complex and needs to be adjusted by two driving mirrors, and the optical path structure cannot be applied to the laser interference used for making variable period gratings in the lithography system.
  • the object of the present invention is to provide a control device and method for the incident angle of the light beam in a laser interference lithography, so as to realize the precise measurement and control of the incident angle of the exposure light path in the variable period grating interference lithography system.
  • One aspect of the present invention is to provide a control device for the incident angle of a beam in laser interference lithography, which is applied in a laser interference lithography system, wherein the laser interference lithography system includes a substrate, a first lens and a second lens disposed opposite to each other. , and the first gimbal mirror located at the focal point of the first lens,
  • the regulating device includes: a beam splitting prism, a first decoupling lens, a first position detector and a feedback control system,
  • the dichroic prism is located between the first lens and the second lens;
  • the first decoupling lens is located between the first position detector and the dichroic prism, and the feedback control system is connected to the the first position detector is connected to the first gimbal;
  • the dichroic prism is used to reflect the first incident light passing through the first universal mirror, and the first decoupling lens is used to incident the first reflected light of the dichroic prism to the first position detector , the first position detector is used to measure the position of the beam, and transmit the measurement result to the feedback control system, and the feedback control system outputs a control command according to the measurement result to adjust the mirror of the first gimbal mirror seat, so as to control the incident angle of the exposure beam,
  • the measurement result of the beam position by the first position detector is:
  • ⁇ Lx represents the offset of the beam in the x direction
  • ⁇ Ly represents the offset of the beam in the y direction
  • f 2 represents the focal length of the second lens
  • P t represents the interference fringe intercept at time t
  • ⁇ represents the laser wavelength
  • the laser interference lithography system further includes a second gimbal mirror located at the focal point of the first lens
  • the regulating device further includes: a second decoupling lens and a second position detector, wherein the A second decoupling lens is located between the second position detector and the dichroic prism
  • the feedback control system is further connected with the second position detector and the second gimbal mirror
  • the dichroic prism is also used for reflecting the second incident light passing through the second universal mirror
  • the second decoupling lens is used for incidenting the second reflected light of the beam splitting prism to the second position detector
  • the second position detector is used to measure the position of the light beam, and transmit the measurement result to the feedback control system
  • the feedback control system outputs a control instruction according to the measurement result to adjust the mirror seat of the second universal mirror , so as to control the incident angle of the exposure beam.
  • the feedback control system includes: a signal receiver, a driver and a phase card, the signal receiver is used for receiving the measurement result of the first position detector, and the phase card is used for performing the measurement on the measurement result.
  • the driver is configured to issue a control command according to the solution result to drive the mirror base of the first universal mirror to move.
  • the adjustment amount of the mirror base of the first gimbal mirror according to the measurement result is:
  • ⁇ x represents the adjustment amount in the x direction
  • ⁇ y represents the adjustment amount in the y direction
  • ⁇ Lx represents the beam offset in the x direction
  • ⁇ Ly represents the beam offset in the y direction
  • f 1 represents the focal length of the first lens
  • f 2 represents the focal length of the second lens
  • P t represents the interference fringe intercept at time t
  • ⁇ represents the laser wavelength
  • the measurement result of the first position detector is:
  • ⁇ L represents the offset of the beam
  • P 1 represents the target periodic intercept
  • P 0 represents the initial periodic intercept
  • f 2 represents the focal length of the second lens
  • ⁇ represents the laser wavelength
  • the adjustment amount of the mirror base of the first gimbal mirror according to the measurement result is:
  • ⁇ x represents the adjustment amount of the lens holder in the x direction
  • f 1 represents the focal length of the first lens
  • f 2 represents the focal length of the second lens
  • P 1 represents the target periodic intercept
  • ⁇ L represents the offset of the beam
  • ⁇ represents the laser wavelength
  • the present invention also provides a method for regulating the incident angle of a beam in laser interference lithography, comprising the following steps:
  • the first reflected light of the beam splitting prism is incident on the first position detector through the first decoupling lens;
  • the feedback control system outputs control instructions according to the measurement results, and adjusts the mirror base of the first gimbal mirror, thereby regulating the incident angle of the exposure beam,
  • the measurement result of the beam position by the first position detector is:
  • ⁇ Lx represents the offset of the beam in the x direction
  • ⁇ Ly represents the offset of the beam in the y direction
  • f 2 represents the focal length of the second lens
  • P t represents the interference fringe intercept at time t
  • ⁇ represents the laser wavelength
  • the method further includes:
  • the second reflected light of the beam splitting prism is incident on the second position detector through the second decoupling lens;
  • the feedback control system outputs control instructions according to the measurement results, and adjusts the mirror base of the second gimbal mirror, thereby regulating the incident angle of the exposure beam.
  • the step of adjusting the mirror base of the first gimbal mirror includes:
  • the measurement result of the first position detector is received by the signal receiver, the measurement result is calculated by the phase card, and the driver sends out control commands according to the calculation result to drive the mirror base of the first universal mirror to move.
  • the present invention has the following advantages and beneficial effects:
  • the invention calculates and issues a control command to regulate the mirror base of the first universal mirror, so as to precisely regulate the incident angle of the exposure beam, so as to generate interference exposure on the substrate and form an ideal interference pattern.
  • the present invention can realize the precise regulation of the incident angle of the exposure light path in the variable period grating interference lithography system.
  • Figure 1a is a schematic diagram of an ideal pattern of double-beam interference at a standard incident angle
  • Fig. 1b is a schematic diagram showing the angle deviation around the x-axis of the incident angle and the deviation of the fringe intercept from the ideal value
  • Fig. 1c is a schematic diagram showing the angle deviation around the y-axis of the incident angle and the deviation of the fringe direction from the ideal direction;
  • FIG. 2 is a schematic diagram of a conventional laser interference lithography system
  • FIG. 3 is a schematic diagram of a laser interference lithography system in the present invention.
  • FIG. 4 is a schematic diagram of the control principle of the incident angle of the exposure beam in the laser interference lithography system of the present invention.
  • FIG. 2 is a schematic diagram of a conventional laser interference lithography system.
  • the laser interference lithography system includes: a laser 1, a first mirror 2, a grating beam splitter 3, a second mirror 4, a third mirror Reflecting mirror 5, fourth reflecting mirror 601, fifth reflecting mirror 701, first lens 8, second lens 9, substrate 10, wherein the light source emitted by laser 1 is incident on grating beam splitter 3 through first reflecting mirror 2 and then split There are two exposure light paths.
  • the first exposure light path passes through the second reflection mirror 4, the fourth reflection mirror 601, the first lens 8, and the second lens 9 in sequence, and then enters the substrate 10 to form the first incident light, and the second exposure light is exposed.
  • the light path passes through the fifth reflecting mirror 701 , the third reflecting mirror 5 , the first lens 8 , and the second lens 9 in sequence, and then enters the substrate 10 to form a second incident light.
  • the laser interference lithography system shown in FIG. 2 is not combined with the incident angle control device, and cannot accurately measure and control the incident angle of the exposure light path.
  • the conventional laser interference lithography system is improved, and the laser interference lithography system at least includes a substrate 10 , a first lens 8 and a second lens 9 arranged oppositely, and a focal point of the first lens 8
  • FIG. 3 is a schematic diagram of the laser interference lithography system in the present invention. As shown in FIG.
  • the laser interference lithography system includes: a laser 1, a first reflection mirror 2, a grating beam splitter 3, a second reflection mirror 4, The third reflecting mirror 5, the first gimbal reflecting mirror 602, the second gimbal reflecting mirror 702, the first lens 8, the second lens 9, the substrate 10, wherein the first gimbal reflecting mirror 602 and the second gimbal reflecting The mirror 702 is located at the focal point of the first lens 8, the substrate 10 is located at the focal point of the second lens 9, the light source emitted by the laser 1 is incident on the grating beam splitter 3 through the first reflecting mirror 2, and then divided into two exposure light paths, the first one being the exposure light path.
  • the exposure light path passes through the second reflecting mirror 4, the first gimbal reflecting mirror 602, the first lens 8, and the second lens 9 in sequence and then enters the substrate 10 to form the first incident light, and the second exposure light path passes through the second gimbal in sequence.
  • the reflecting mirror 702 , the third reflecting mirror 5 , the first lens 8 and the second lens 9 are then incident on the substrate 10 to form a second incident light, and the exposure point is located at the focal point of the second lens 9 .
  • the first gimbal mirror 602 and the second gimbal mirror 702 are respectively installed on their respective mirror bases, and the first gimbal reflecting mirror 602 and the second gimbal reflecting mirror can be adjusted by adjusting the angle of the mirror bases.
  • the optical path position of 702 can be adjusted, so that the pattern of the interference fringes formed on the substrate 10 can be adjusted.
  • FIG. 3 also shows the control device for the incident angle of the beam in the present invention, which is combined with the laser interference lithography system.
  • the control device includes: a beam splitter prism 11, a first decoupling lens 12, a first position detector 13 (PSD, Position Sensitive Detector) and a feedback control system 16, wherein the beam splitter prism 11 is located at the first lens 8 and the second lens 9; the first decoupling lens 12 is located between the first position detector 13 and the dichroic prism 11, the feedback control system 16 and the first position detector 13 is connected to the first universal mirror 602; the beam splitting prism 11 is used to reflect the first incident light passing through the first universal mirror 602, and the first decoupling lens 12 is used to The first reflected light of the beam splitting prism 11 is incident on the first position detector 13, and the first position detector 13 is used to measure the position of the beam and transmit the measurement result to the feedback control system 16, the The feedback control system 16 outputs a control instruction according to the measurement result, and adjusts the mirror base of the first
  • the first exposure light path passes through the second reflecting mirror 4, the first universal reflecting mirror 602, the first lens 8, the beam splitting prism 11, and the second lens 9 in sequence, and then enters the substrate 10 to form the first incident light.
  • the beam splitting prism 11 is used, the beam is reflected to the first decoupling lens 12 through the beam splitting prism 11 , and fed back to the feedback control system 16 through the first position detector 13 .
  • the present invention calculates and issues a control command to regulate the mirror base of the first gimbal mirror 602 , so that interference exposure can be generated on the substrate 10 and an ideal interference pattern can be formed.
  • the regulating device further includes: a second decoupling lens 14 and a second position detector 15, wherein the second decoupling lens 14 is located between the second position detector 15 and the second position detector 15.
  • the feedback control system 16 is also connected with the second position detector 15 and the second gimbal mirror 702, and the beam splitting prism 11 is also used for the The second incident light from the mirror 702 is reflected, and the second decoupling lens 14 is used to incident the second reflected light from the beam splitting prism 11 to the second position detector 15, and the second position detects
  • the device 15 is used to measure the position of the beam, and transmit the measurement result to the feedback control system 16, and the feedback control system 16 outputs a control command according to the measurement result to adjust the mirror seat of the second gimbal mirror 702,
  • the incident angle of the exposure beam is regulated.
  • both the first lens 8 and the second lens 9 are convex lenses.
  • Both the first decoupling lens 12 and the second decoupling lens 14 are convex lenses.
  • the feedback control system 16 includes: a signal receiver, a driver and a phase card, the signal receiver is used to receive the measurement result of the first position detector 13 or the second position detector 15, so The phase card is used to calculate the measurement result, and the driver is used to issue a control command according to the calculation result to drive the mirror base of the first gimbal mirror 602 or the second gimbal mirror 702 to move.
  • the first position detector 13 and the second position detector 15 measure the beam position in the same way, and the feedback control system 16 also calculates the measurement result in the same way.
  • FIG. 4 is a schematic diagram of the control principle of the incident angle of the exposure beam in the laser interference lithography system according to the present invention.
  • the first gimbal mirror 602 is located in the second At the focal point of the first lens 8 , the substrate 10 is located at the focal point of the second lens 9 , so that the measurement and regulation of the incident angle of the exposure beam is converted into the measurement and regulation of the position of the optical path between the first lens 8 and the second lens 9 .
  • the lower left in FIG. 4 is the coordinate system of the interference fringes, and the upper left is the coordinate system for adjusting the mirror seat of the first gimbal mirror 602 .
  • Fig. 1a is a schematic diagram of an ideal pattern of double-beam interference at a standard incident angle
  • Fig. 1c is a schematic diagram of a graph with an angle deviation around the y-axis at the incident angle and the direction of the fringes deviates from the ideal direction.
  • the measurement result of the beam position by the first position detector 13 is:
  • ⁇ Lx represents the offset of the beam in the x direction
  • ⁇ Ly represents the offset of the beam in the y direction
  • f 2 represents the focal length of the second lens
  • P t represents the interference fringe intercept at time t
  • ⁇ represents the laser wavelength
  • the adjustment amount of the mirror base of the first gimbal mirror 602 is:
  • ⁇ x represents the adjustment amount in the x direction
  • ⁇ y represents the adjustment amount in the y direction
  • ⁇ Lx represents the beam offset in the x direction
  • ⁇ Ly represents the beam offset in the y direction
  • f 1 represents the focal length of the first lens
  • f 2 represents the focal length of the second lens
  • P t represents the interference fringe intercept at time t
  • ⁇ represents the laser wavelength
  • the direction of the interference fringes can be the same as the ideal direction of the interference fringes by adjusting the mirror base of the first gimbal mirror 602 .
  • Fig. 1a is a schematic diagram of an ideal pattern of double-beam interference at a standard incident angle
  • Fig. 1b is a schematic diagram of a graph with an angle deviation around the x-axis and a fringe intercept deviation from the ideal value at the incident angle.
  • the periodic intercept of the interference fringes deviates from the ideal periodic intercept.
  • the measurement result of the first position detector 13 is:
  • ⁇ L represents the offset of the beam
  • P 1 represents the target periodic intercept
  • P 0 represents the initial periodic intercept (the actually formed periodic intercept that deviates from the ideal state)
  • f 2 represents the focal length of the second lens
  • ⁇ represents the laser wavelength.
  • the adjustment amount of the mirror base of the first gimbal mirror 602 is:
  • ⁇ x represents the adjustment amount of the lens holder in the x direction
  • f 1 represents the focal length of the first lens
  • f 2 represents the focal length of the second lens
  • P 1 represents the target periodic intercept
  • ⁇ L represents the offset of the beam
  • ⁇ represents the laser wavelength
  • each variable used is a vector representation, the fringe deflection direction and the adjustment amount of the mirror base.
  • the adjustment directions of the stripes are included, so that the lens holder can be adjusted accurately according to the deflection direction of the stripes.
  • the calculation formula of the measurement result or adjustment amount of the second position detector 15 and the mirror base of the second gimbal mirror 702 is the same as the above.
  • the phase card in the feedback control system 16 calculates the measurement result of the first position detector 13, and sends out the result through the driver linked on the backplane of the VME chassis according to the calculation result.
  • the control command drives the mirror base of the first gimbal mirror 602 to precisely control the incident angle of the light beam, thereby forming an ideal interference pattern.
  • the control device of the present invention to control the beam incident angle of the laser interference lithography system will be described in detail below.
  • the most influential factor on the measurement error of the beam incident angle is the measurement error caused by the PSD electronic noise.
  • the error caused by the electronic noise of the PSD is reflected in the minimum measurement resolution of the PSD. Taking the psd9 product of Xinou Optoelectronics as an example, the measuring stroke of the photosensitive chip is 9mm, and the resolution can reach 1.5 ⁇ m when the incident light wavelength is 633nm and the power is 3mW.
  • the signal-to-noise ratio is 6e+3 at this time;
  • the experimental conditions are that the wavelength of light is 355nm and the power is 0.1mW.
  • the sensitivity of this type of product at the wavelength of 633nm and 355nm is 38.5% and 16.3%, respectively.
  • L 1 is the distance parameter between the PSD and the decoupling lens.
  • the measurement error of the PSD will cause the motor drive angle adjustment ( ⁇ y) calculated from the measurement result (ie the beam offset information).
  • ⁇ y motor drive angle adjustment
  • f 3 represents the focal length of the decoupling lens (here the decoupling lens may specifically be the first decoupling lens or the second decoupling lens in the system).
  • L represents the distance from the center of the light beam to the optical axis of the first lens
  • atan is the abbreviation of the arc tangent function arctan
  • f 1 represents the focal length of the first lens
  • ⁇ y is the adjustment amount of the motor drive angle.
  • the fringe direction angle error et caused by the PSD measurement error ⁇ is:
  • ⁇ is the measurement error parameter of PSD, and the angle error of the fringe direction calculated by simulation is 54.55urad; s is the measured displacement of PSD; ⁇ y is the adjustment amount of the motor drive angle.
  • P is the fringe period intercept
  • ⁇ L is the beam displacement
  • ⁇ is the laser wavelength
  • f 2 is the focal length of the second lens.
  • the fringe period intercept error ep caused by the PSD measurement error ⁇ is:
  • P is the fringe period intercept
  • s is the measurement displacement of the PSD
  • ⁇ is the measurement error parameter of the PSD
  • ⁇ y is the adjustment amount of the motor drive angle.
  • the period error is a cumulative error, the error value is relatively large in the later stage of the step.
  • the set period range is 500nm-2500nm, and the periodic step interval is 10nm.
  • the period error at the edge of the substrate is about 22nm, which is 22nm from the standard value of 2500nm.
  • the present invention also provides a method for regulating the incident angle of the beam in the laser interference lithography, which is applied to the laser interference lithography system to regulate the incident angle of the beam, including the following steps:
  • the first incident light passing through the first universal mirror 602 is reflected by the beam splitter prism 11;
  • the first reflected light of the beam splitting prism 11 is incident on the first position detector 13 through the first decoupling lens 12;
  • the mirror base of the first gimbal mirror 602 is adjusted, so that the incident angle of the exposure beam is regulated.
  • the method further includes:
  • the second incident light passing through the second universal mirror 702 is reflected by the beam splitter prism 11;
  • the second reflected light of the beam splitting prism 11 is incident on the second position detector 15 through the second decoupling lens 14;
  • the mirror base of the second gimbal mirror 702 is adjusted, so that the incident angle of the exposure beam is regulated.
  • the beam is reflected by the beam splitting prism 11, the beam position is measured by the first position detector 13 and the second position detector 15 and fed back to the feedback control system 16, and the mirror holder is adjusted by the feedback control system 16, so that the Precise control of the beam incident angle.
  • the step of adjusting the mirror base of the first gimbal mirror 602 includes:
  • the measurement result of the first position detector 13 is received by the signal receiver, the measurement result is calculated by the phase card, and the driver sends a control command according to the calculation result to drive the mirror base of the first gimbal mirror 602 to move.

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Abstract

一种激光干涉光刻中光束入射角度的调控装置及方法，装置包括：分光棱镜（11）、第一解耦透镜（12）、第一位置检测器（13）和反馈控制系统（16），其中，分光棱镜（11）位于第一透镜（8）和第二透镜（9）之间；第一解耦透镜（12）位于第一位置检测器（13）与分光棱镜（11）之间，反馈控制系统（16）与第一位置检测器（13）和第一万向反射镜（602）连接；分光棱镜（11）用于对经第一万向反射镜（602）的第一入射光进行反射，第一解耦透镜（12）用于将分光棱镜（11）的第一反射光入射至第一位置检测器（13），第一位置检测器（13）用于对光束位置进行测量，并将测量结果传输至反馈控制系统（16），反馈控制系统（16）根据测量结果输出控制指令，调整第一万向反射镜（602）的镜座，从而对曝光光束的入射角度进行调控。可以对光束入射角度进行精确调控。

Description

激光干涉光刻中光束入射角的调控装置及方法
本申请要求于2020年7月3日提交中国专利局、申请号为2020106360985，发明名称为“激光干涉光刻中光束入射角的调控装置及方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明属于光刻技术领域，具体地，涉及一种激光干涉光刻中光束入射角度的调控装置及方法。
背景技术
激光干涉光刻技术为利用光的干涉和衍射特性通过光束组合的方式控制干涉图形，在微电子、亚波长光栅、微透镜阵列、及纳米图形制造等领域有着广阔的应用前景。干涉光栅图形周期截距由曝光光路入射角直接决定，在制作变周期光栅的双光束激光扫描干涉光刻中，对曝光光路入射角的精密测量及调控尤为重要。
公开号为US6,882,477B1的美国专利公开了一种在激光干涉光刻系统中对曝光光束入射角度的测量及调控方案，该方案为通过两个位置敏感探测器的八个信号源解算出单束曝光光路在曝光基底的光斑位置及入射角度，每个光路依次经过两个两轴驱动反射镜反射后入射至基底，通过四个驱动调整可以控制光路包括位置和角度的四个自由度。虽然利用该装置可对曝光光路的位姿进行精确的测量及调控，但其装置结构较为复杂，需通过两个驱动反射镜进行调整，且光路结构无法应用至用于制作变周期光栅的激光干涉光刻系统中。
发明内容
鉴于以上问题，本发明的目的是提供一种激光干涉光刻中光束入射角度 的调控装置及方法，以实现在变周期光栅干涉光刻系统中对曝光光路入射角度的精确测量及调控。
为了实现上述目的，本发明采用以下技术方案：
本发明的一个方面是提供一种激光干涉光刻中光束入射角度的调控装置，应用于激光干涉光刻系统中，所述激光干涉光刻系统包括基底，相对设置的第一透镜和第二透镜，以及位于所述第一透镜焦点处的第一万向反射镜，
所述调控装置包括：分光棱镜、第一解耦透镜、第一位置检测器和反馈控制系统，
其中，所述分光棱镜位于所述第一透镜和所述第二透镜之间；所述第一解耦透镜位于所述第一位置检测器与所述分光棱镜之间，所述反馈控制系统与所述第一位置检测器和所述第一万向反射镜连接；
所述分光棱镜用于对经第一万向反射镜的第一入射光进行反射，所述第一解耦透镜用于将所述分光棱镜的第一反射光入射至所述第一位置检测器，所述第一位置检测器用于对光束位置进行测量，并将测量结果传输至所述反馈控制系统，所述反馈控制系统根据测量结果输出控制指令，调整所述第一万向反射镜的镜座，从而对曝光光束的入射角度进行调控，
其中，在基底的干涉条纹的偏转量为θ e时，第一位置检测器对光束位置的测量结果为：
Figure PCTCN2021103935-appb-000001
Figure PCTCN2021103935-appb-000002
其中，ΔLx表示光束在x方向的偏移量，ΔLy表示光束在y方向的偏移量，f 2表示第二透镜的焦距，P t表示t时刻的干涉条纹截距，λ表示激光波长。
可选地，所述激光干涉光刻系统还包括位于第一透镜焦点处的第二万向反射镜，所述调控装置还包括：第二解耦透镜和第二位置检测器，其中，所述第二解耦透镜位于所述第二位置检测器与所述分光棱镜之间，所述反馈控 制系统还与所述第二位置检测器和所述第二万向反射镜连接，所述分光棱镜还用于对经所述第二万向反射镜的第二入射光进行反射，所述第二解耦透镜用于将所述分光棱镜的第二反射光入射至所述第二位置检测器，所述第二位置检测器用于对光束位置进行测量，并将测量结果传输至所述反馈控制系统，所述反馈控制系统根据测量结果输出控制指令，调整所述第二万向反射镜的镜座，从而对曝光光束的入射角度进行调控。
可选地，所述反馈控制系统包括：信号接收器、驱动器和相位卡，所述信号接收器用于接收所述第一位置检测器的测量结果，所述相位卡用于对所述测量结果进行解算，所述驱动器用于根据解算结果发出控制指令驱动所述第一万向反射镜的镜座运动。
可选地，根据测量结果对所述第一万向反射镜的镜座的调节量为：
Figure PCTCN2021103935-appb-000003
Figure PCTCN2021103935-appb-000004
其中，Δθ x表示x方向的调节量，Δθ y表示y方向的调节量，ΔLx表示光束在x方向的偏移量，ΔLy表示光束在y方向的偏移量，f 1表示第一透镜的焦距，f 2表示第二透镜的焦距，P t表示t时刻的干涉条纹截距，λ表示激光波长。
可选地，在基底的干涉条纹的目标周期截距为P 1时，第一位置检测器的测量结果为：
Figure PCTCN2021103935-appb-000005
其中，ΔL表示光束的偏移量，P 1表示目标周期截距，P 0表示初始周期截距，f 2表示第二透镜的焦距，λ表示激光波长。
可选地，根据测量结果对所述第一万向反射镜的镜座的调节量为：
Figure PCTCN2021103935-appb-000006
其中，Δθ x表示镜座x方向的调节量，f 1表示第一透镜的焦距，f 2表示第二透镜的焦距，P 1表示目标周期截距，ΔL表示光束的偏移量，λ表示激光波长。
本发明还提供一种激光干涉光刻中光束入射角度的调控方法，包括以下步骤：
通过分光棱镜对经第一万向反射镜的第一入射光进行反射；
通过第一解耦透镜将所述分光棱镜的第一反射光入射至第一位置检测器；
通过所述第一位置检测器对光束位置进行测量，并将测量结果传输至反馈控制系统；
通过所述反馈控制系统根据测量结果输出控制指令，调整所述第一万向反射镜的镜座，从而对曝光光束的入射角度进行调控，
其中，在基底的干涉条纹的偏转量为θ e时，第一位置检测器对光束位置的测量结果为：
Figure PCTCN2021103935-appb-000007
Figure PCTCN2021103935-appb-000008
其中，ΔLx表示光束在x方向的偏移量，ΔLy表示光束在y方向的偏移量，f 2表示第二透镜的焦距，P t表示t时刻的干涉条纹截距，λ表示激光波长。
可选地，所述方法还包括：
通过分光棱镜对经第二万向反射镜的第二入射光进行反射；
通过第二解耦透镜将所述分光棱镜的第二反射光入射至第二位置检测器；
通过所述第二位置检测器对光束位置进行测量，并将测量结果传输至反馈控制系统；
通过所述反馈控制系统根据测量结果输出控制指令，调整所述第二万向反射镜的镜座，从而对曝光光束的入射角度进行调控。
可选地，通过所述反馈控制系统根据测量结果输出控制指令，调整所述第一万向反射镜的镜座的步骤包括：
通过信号接收器接收第一位置检测器的测量结果，通过相位卡对所述测量结果进行解算，通过驱动器根据解算结果发出控制指令，驱动第一万向反射镜的镜座运动。
与现有技术相比，本发明具有以下优点和有益效果：
本发明根据第一位置检测器的测量结果解算并发出控制指令调控第一万向反射镜的镜座，从而对曝光光束的入射角度进行精密调控，使得可以在基底产生干涉曝光并形成理想的干涉图形。
并且，本发明可实现在变周期光栅干涉光刻系统中对曝光光路入射角度的精确调控。
附图说明
图1a为标准入射角下双光束干涉理想图形的示意图；
图1b为入射角存在绕x轴角度偏差、条纹截距偏离理想值的图形示意图；
图1c为入射角存在绕y轴角度偏差、条纹方向偏离理想方向的图形示意图；
图2为常规激光干涉光刻系统的示意图；
图3为本发明中激光干涉光刻系统的示意图；
图4为本发明在激光干涉光刻系统中对曝光光束入射角度的调控原理图。
图中：1-激光器，2-第一反射镜，3-光栅分束器，4-第二反射镜，5-第三反射镜，601-第四反射镜，602-第一万向反射镜，701-第五反射镜，702-第二万向反射镜，8-第一透镜，9-第二透镜，10-基底，11-分光棱镜，12-第一解耦透镜，13-第一位置检测器，14-第二解耦透镜，15-第二位置检测器，16-反馈控制系统。
具体实施方式
下面将参考附图来描述本发明所述的实施例。本领域的普通技术人员可以认识到，在不偏离本发明的精神和范围的情况下，可以用各种不同的方式或其组合对所描述的实施例进行修正。因此，附图和描述在本质上是说明性的，而不是用于限制权利要求的保护范围。此外，在本说明书中，附图未按比例画出，并且相同的附图标记表示相同的部分。
在本发明中，对光束入射角的调控装置应用于激光干涉光刻系统。图2为常规激光干涉光刻系统的示意图，如图2所示，所述激光干涉光刻系统包括：激光器1、第一反射镜2、光栅分束器3、第二反射镜4、第三反射镜5、第四反射镜601、第五反射镜701、第一透镜8、第二透镜9、基底10，其中，激光器1出射光源经第一反射镜2入射至光栅分束器3后分为两束曝光光路，第一条曝光光路依次经过第二反射镜4、第四反射镜601、第一透镜8、第二透镜9后入射至基底10形成第一条入射光，第二条曝光光路依次经过第五反射镜701、第三反射镜5、第一透镜8、第二透镜9后入射至基底10形成第二条入射光。图2中显示的激光干涉光刻系统未与入射角调控装置结合，无法对曝光光路入射角度进行精确测量和调控。
本发明中，对常规的激光干涉光刻系统进行改进，所述激光干涉光刻系统至少包括基底10，相对设置的第一透镜8和第二透镜9，以及位于所述第一透镜8焦点处的第一万向反射镜602。图3为本发明中激光干涉光刻系统的示意图，如图3所示，所述激光干涉光刻系统包括：激光器1、第一反射镜2、光栅分束器3、第二反射镜4、第三反射镜5、第一万向反射镜602、第二万向反射镜702、第一透镜8、第二透镜9、基底10，其中，第一万向反射镜602和第二万向反射镜702位于第一透镜8的焦点处，基底10位于第二透镜9的焦点处，激光器1出射光源经第一反射镜2入射至光栅分束器3后分为两束曝光光路，第一条曝光光路依次经过第二反射镜4、第一万向反射镜602、第一透镜8、第二透镜9后入射至基底10形成第一条入射光，第二条曝光光路依次经过第二万向反射镜702、第三反射镜5、第一透镜8、第二透镜9后入射至基底10形成第二条入射光，曝光点位于第二透镜9的焦点处。其中，第 一万向反射镜602和第二万向反射镜702分别安装在各自的镜座上，通过调整镜座的角度就可以调整经第一万向反射镜602和第二万向反射镜702的光路位置，从而可以调整在基底10形成的干涉条纹的图形。
图3中还示出了本发明中对光束入射角的调控装置，与激光干涉光刻系统相结合。其中，调控装置包括：分光棱镜11、第一解耦透镜12、第一位置检测器13(PSD，Position Sensitive Detector)和反馈控制系统16，其中，所述分光棱镜11位于所述第一透镜8和所述第二透镜9之间；所述第一解耦透镜12位于所述第一位置检测器13与所述分光棱镜11之间，所述反馈控制系统16与所述第一位置检测器13和所述第一万向反射镜602连接；所述分光棱镜11用于对经第一万向反射镜602的第一入射光进行反射，所述第一解耦透镜12用于将所述分光棱镜11的第一反射光入射至所述第一位置检测器13，所述第一位置检测器13用于对光束位置进行测量，并将测量结果传输至所述反馈控制系统16，所述反馈控制系统16根据测量结果输出控制指令，调整所述第一万向反射镜602的镜座，从而对曝光光束的入射角度进行调控。其中，第一条曝光光路依次经过第二反射镜4、第一万向反射镜602、第一透镜8、分光棱镜11、第二透镜9后入射至基底10形成第一条入射光，在经过分光棱镜11时，通过分光棱镜11将光束反射至第一解耦透镜12，经第一位置检测器13反馈至反馈控制系统16。
本发明根据第一位置检测器13的测量结果解算并发出控制指令调控第一万向反射镜602的镜座，使得可以在基底10产生干涉曝光并形成理想的干涉图形。
本发明的一个实施例中，所述调控装置还包括：第二解耦透镜14和第二位置检测器15，其中，所述第二解耦透镜14位于所述第二位置检测器15与所述分光棱镜11之间，所述反馈控制系统16还与所述第二位置检测器15和所述第二万向反射镜702连接，所述分光棱镜11还用于对经所述第二万向反射镜702的第二入射光进行反射，所述第二解耦透镜14用于将所述分光棱镜11的第二反射光入射至所述第二位置检测器15，所述第二位置检测器15用于对光束位置进行测量，并将测量结果传输至所述反馈控制系统16，所述反 馈控制系统16根据测量结果输出控制指令，调整所述第二万向反射镜702的镜座，从而对曝光光束的入射角度进行调控。
在一个实施例中，第一透镜8和第二透镜9均是凸透镜。第一解耦透镜12、第二解耦透镜14均是凸透镜。
在一个实施例中，所述反馈控制系统16包括：信号接收器、驱动器和相位卡，所述信号接收器用于接收所述第一位置检测器13或第二位置检测器15的测量结果，所述相位卡用于对所述测量结果进行解算，所述驱动器用于根据解算结果发出控制指令驱动所述第一万向反射镜602或第二万向反射镜702的镜座运动。
需要说明的是，本发明中，第一位置检测器13与第二位置检测器15对光束位置的测量方法相同，反馈控制系统16对测量结果的解算方式也相同。
下面以单光束为例，进一步说明本发明实施例。
图4为本发明在激光干涉光刻系统中对曝光光束入射角度的调控原理图，如图4所示，以第一条曝光光路的调整为例进行说明，第一万向反射镜602位于第一透镜8的焦点处，基底10位于第二透镜9的焦点处，从而使对曝光光束入射角的测量与调控转换为对第一透镜8与第二透镜9之间光路位置的测量调控。其中，图4中左下方为干涉条纹的坐标系，左上方为对第一万向反射镜602的镜座调节的坐标系。
图1a为标准入射角下双光束干涉理想图形的示意图，图1c为入射角存在绕y轴角度偏差、条纹方向偏离理想方向的图形示意图，如图1a和图1c所示，在基底10的干涉条纹的偏转量为θ e时，第一位置检测器13对光束位置的测量结果为：
Figure PCTCN2021103935-appb-000009
Figure PCTCN2021103935-appb-000010
其中，ΔLx表示光束在x方向的偏移量，ΔLy表示光束在y方向的偏移量， f 2表示第二透镜的焦距，P t表示t时刻的干涉条纹截距，λ表示激光波长。
进一步地，根据测量结果对所述第一万向反射镜602的镜座的调节量为：
Figure PCTCN2021103935-appb-000011
Figure PCTCN2021103935-appb-000012
其中，Δθ x表示x方向的调节量，Δθ y表示y方向的调节量，ΔLx表示光束在x方向的偏移量，ΔLy表示光束在y方向的偏移量，f 1表示第一透镜的焦距，f 2表示第二透镜的焦距，P t表示t时刻的干涉条纹截距，λ表示激光波长。
通过调整第一万向反射镜602的镜座可以使得干涉条纹的方向与理想中干涉条纹的方向相同。
在制作渐变周期光栅的双光束激光干涉光刻系统中，曝光光束入射方向的偏差会造成干涉图形偏离理想图形。图1a为标准入射角下双光束干涉理想图形的示意图，图1b为入射角存在绕x轴角度偏差、条纹截距偏离理想值的图形示意图，如图1a和图1b所示，在基底10形成的干涉条纹的周期截距偏离理想状态下的周期截距。在一个实施例中，在基底10的干涉条纹的目标周期截距为P 1(理想周期截距)时，第一位置检测器13的测量结果为：
Figure PCTCN2021103935-appb-000013
其中，ΔL表示光束的偏移量，P 1表示目标周期截距，P 0表示初始周期截距(实际形成的偏离理想状态的周期截距)，f 2表示第二透镜的焦距，λ表示激光波长。
进一步地，根据测量结果对所述第一万向反射镜602的镜座的调节量为：
Figure PCTCN2021103935-appb-000014
其中，Δθ x表示镜座x方向的调节量，f 1表示第一透镜的焦距，f 2表示第二透镜的焦距，P 1表示目标周期截距，ΔL表示光束的偏移量，λ表示激光波长。
需要说明的是，第一位置检测器13的测量结果公式以及对第一万向反射镜602的镜座的调节量计算公式中，采用的各个变量均是矢量表示，条纹偏转方向以及对镜座的调节方向均包含在内，以便于根据条纹偏转方向准确调节镜座。
需要说明的是，当采用多光束进行干涉时，第二位置检测器15、第二万向反射镜702的镜座的测量结果或调节量的计算公式与上述相同。
获取第一万向反射镜602的镜座调节量之后，反馈控制系统16中由相位卡对第一位置检测器13的测量结果进行解算，根据解算结果通过VME机箱背板链接的驱动器发出控制指令，驱动第一万向反射镜602的镜座对光束入射角度进行精密调控，从而形成理想的干涉图形。
下面详细描述使用本发明的调控装置对激光干涉光刻系统的光束入射角度进行调控的效果。在激光干涉光刻系统中对光束入射角度测量结果误差影响最大的因素为PSD电子噪声导致的测量误差。由PSD电子噪声引起的误差体现为PSD的最小测量分辨率。以选用信欧光电型号为psd9产品为例，其感光芯片测量行程为9mm，在入射光波长为633nm、功率3mW状态下其分辨率可达1.5μm，可知此时信噪比为6e+3；实验条件为光波长355nm、功率0.1mW，该型号产品在633nm及355nm波长敏感度分别为38.5％、16.3％。则实验条件下，信噪比为6e+3*(16.3％*0.5)/(38.5％*3)＝84.68，根据总量程9mm计算得当前分辨率为21.26μm。
PSD测量位移s与光束偏移δL之间关系为：
s＝(1-L 1/f 3)δL
式中，L 1为PSD距解耦透镜的距离参数，在进行条纹方向补偿过程中，PSD的测量误差会导致由测量结果(即光束偏移信息)解算得到的电机驱动角度调节量(δθy)不准确；f 3表示解耦透镜的焦距(此处解耦透镜具体可以是系统中的第一解耦透镜或第二解耦透镜)。
条纹方向转角δθ与光束偏移δL之间关系为：
Figure PCTCN2021103935-appb-000015
Figure PCTCN2021103935-appb-000016
其中，L表示光束中心距第一透镜光轴的距离，atan为反正切函数arctan的简写，f 1表示第一透镜的焦距，δθy为电机驱动角度调节量。
由PSD测量误差ε引起的条纹方向转角误差et为：
et＝δθy(s+ε)-δθy(s)
其中，ε为PSD的测量误差参数，由仿真计算得条纹方向的转角误差为54.55urad；s为PSD的测量位移；δθy为电机驱动角度调节量。
条纹周期截距P与光束偏移δL之间关系为：
Figure PCTCN2021103935-appb-000017
其中，P为条纹周期截距，δL为光束偏移，λ为激光波长，f 2为第二透镜的焦距。
由PSD测量误差ε引起的条纹周期截距误差ep为：
ep＝P(s+ε)-δθy(s)
其中，P为条纹周期截距，s为PSD的测量位移，ε为PSD的测量误差参数，δθy为电机驱动角度调节量。
由于周期误差为累计误差，在步进后期误差值相对较大，设定周期范围为500nm-2500nm，周期步进间隔为10nm，在基板边缘周期误差约为22nm，即与标准值2500nm相差22nm。
本发明还提供一种激光干涉光刻中光束入射角度的调控方法，应用于激光干涉光刻系统中，对光束入射角度进行调控，包括以下步骤：
通过分光棱镜11对经第一万向反射镜602的第一入射光进行反射；
通过第一解耦透镜12将所述分光棱镜11的第一反射光入射至第一位置 检测器13；
通过所述第一位置检测器13对光束位置进行测量，并将测量结果传输至反馈控制系统16；
通过所述反馈控制系统16根据测量结果输出控制指令，调整所述第一万向反射镜602的镜座，从而对曝光光束的入射角度进行调控。
在一个实施例中，所述方法还包括：
通过分光棱镜11对经第二万向反射镜702的第二入射光进行反射；
通过第二解耦透镜14将所述分光棱镜11的第二反射光入射至第二位置检测器15；
通过所述第二位置检测器15对光束位置进行测量，并将测量结果传输至反馈控制系统16；
通过所述反馈控制系统16根据测量结果输出控制指令，调整所述第二万向反射镜702的镜座，从而对曝光光束的入射角度进行调控。
本发明通过分光棱镜11对光束进行反射，通过第一位置检测器13、第二位置检测器15对光束位置测量并反馈至反馈控制系统16，通过反馈控制系统16对镜座进行调节，从而可以对光束入射角度进行精确调控。
在一个实施例中，通过所述反馈控制系统16根据测量结果输出控制指令，调整所述第一万向反射镜602的镜座的步骤包括：
通过信号接收器接收第一位置检测器13的测量结果，通过相位卡对所述测量结果进行解算，通过驱动器根据解算结果发出控制指令，驱动第一万向反射镜602的镜座运动。
需要说明的是，本发明之激光干涉光刻中光束入射角度的调控方法的具体实施方式与上述调控装置的具体实施方式大致相同，在此不再赘述。
以上所述仅为本发明的优选实施例，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (9)

  1. 一种激光干涉光刻中光束入射角度的调控装置，应用于激光干涉光刻系统中，所述激光干涉光刻系统包括基底，相对设置的第一透镜和第二透镜，以及位于所述第一透镜焦点处的第一万向反射镜，其特征在于，
    所述调控装置包括：分光棱镜、第一解耦透镜、第一位置检测器和反馈控制系统，
    其中，所述分光棱镜位于所述第一透镜和所述第二透镜之间；所述第一解耦透镜位于所述第一位置检测器与所述分光棱镜之间，所述反馈控制系统与所述第一位置检测器和所述第一万向反射镜连接；
    所述分光棱镜用于对经第一万向反射镜的第一入射光进行反射，所述第一解耦透镜用于将所述分光棱镜的第一反射光入射至所述第一位置检测器，所述第一位置检测器用于对光束位置进行测量，并将测量结果传输至所述反馈控制系统，所述反馈控制系统根据测量结果输出控制指令，调整所述第一万向反射镜的镜座，从而对曝光光束的入射角度进行调控，
    其中，在基底的干涉条纹的偏转量为θ e时，第一位置检测器对光束位置的测量结果为：
    Figure PCTCN2021103935-appb-100001
    Figure PCTCN2021103935-appb-100002
    其中，ΔLx表示光束在x方向的偏移量，ΔLy表示光束在y方向的偏移量，f 2表示第二透镜的焦距，P t表示t时刻的干涉条纹截距，λ表示激光波长。
  2. 根据权利要求1所述的激光干涉光刻中光束入射角度的调控装置，其特征在于，所述激光干涉光刻系统还包括位于第一透镜焦点处的第二万向反射镜，所述调控装置还包括：第二解耦透镜和第二位置检测器，其中，所述第二解耦透镜位于所述第二位置检测器与所述分光棱镜之间，所述反馈控制系 统还与所述第二位置检测器和所述第二万向反射镜连接，所述分光棱镜还用于对经所述第二万向反射镜的第二入射光进行反射，所述第二解耦透镜用于将所述分光棱镜的第二反射光入射至所述第二位置检测器，所述第二位置检测器用于对光束位置进行测量，并将测量结果传输至所述反馈控制系统，所述反馈控制系统根据测量结果输出控制指令，调整所述第二万向反射镜的镜座，从而对曝光光束的入射角度进行调控。
  3. 根据权利要求1所述的激光干涉光刻中光束入射角度的调控装置，其特征在于，所述反馈控制系统包括：信号接收器、驱动器和相位卡，所述信号接收器用于接收所述第一位置检测器的测量结果，所述相位卡用于对所述测量结果进行解算，所述驱动器用于根据解算结果发出控制指令驱动所述第一万向反射镜的镜座运动。
  4. 根据权利要求1所述的激光干涉光刻中光束入射角度的调控装置，其特征在于，根据测量结果对所述第一万向反射镜的镜座的调节量为：
    Figure PCTCN2021103935-appb-100003
    Figure PCTCN2021103935-appb-100004
    其中，Δθ x表示x方向的调节量，Δθ y表示y方向的调节量，ΔLx表示光束在x方向的偏移量，ΔLy表示光束在y方向的偏移量，f 1表示第一透镜的焦距，f 2表示第二透镜的焦距，P t表示t时刻的干涉条纹截距，λ表示激光波长。
  5. 根据权利要求1所述的激光干涉光刻中光束入射角度的调控装置，其特征在于，在基底的干涉条纹的目标周期截距为P 1时，第一位置检测器的测量结果为：
    Figure PCTCN2021103935-appb-100005
    其中，ΔL表示光束的偏移量，P 1表示目标周期截距，P 0表示初始周期截 距，f 2表示第二透镜的焦距，λ表示激光波长。
  6. 根据权利要求5所述的激光干涉光刻中光束入射角度的调控装置，其特征在于，根据测量结果对所述第一万向反射镜的镜座的调节量为：
    Figure PCTCN2021103935-appb-100006
    其中，Δθ x表示镜座x方向的调节量，f 1表示第一透镜的焦距，f 2表示第二透镜的焦距，P 1表示目标周期截距，ΔL表示光束的偏移量，λ表示激光波长。
  7. 一种激光干涉光刻中光束入射角度的调控方法，其特征在于，包括以下步骤：
    通过分光棱镜对经第一万向反射镜的第一入射光进行反射；
    通过第一解耦透镜将所述分光棱镜的第一反射光入射至第一位置检测器；
    通过所述第一位置检测器对光束位置进行测量，并将测量结果传输至反馈控制系统；
    通过所述反馈控制系统根据测量结果输出控制指令，调整所述第一万向反射镜的镜座，从而对曝光光束的入射角度进行调控，
    其中，在基底的干涉条纹的偏转量为θ e时，第一位置检测器对光束位置的测量结果为：
    Figure PCTCN2021103935-appb-100007
    Figure PCTCN2021103935-appb-100008
    其中，ΔLx表示光束在x方向的偏移量，ΔLy表示光束在y方向的偏移量，f 2表示第二透镜的焦距，P t表示t时刻的干涉条纹截距，λ表示激光波长。
  8. 根据权利要求7所述的激光干涉光刻中光束入射角度的调控方法，其特征在于，所述方法还包括：
    通过分光棱镜对经第二万向反射镜的第二入射光进行反射；
    通过第二解耦透镜将所述分光棱镜的第二反射光入射至第二位置检测器；
    通过所述第二位置检测器对光束位置进行测量，并将测量结果传输至反馈控制系统；
    通过所述反馈控制系统根据测量结果输出控制指令，调整所述第二万向反射镜的镜座，从而对曝光光束的入射角度进行调控。
  9. 根据权利要求7或8所述的激光干涉光刻中光束入射角度的调控方法，其特征在于，通过所述反馈控制系统根据测量结果输出控制指令，调整所述第一万向反射镜的镜座的步骤包括：
    通过信号接收器接收第一位置检测器的测量结果，通过相位卡对所述测量结果进行解算，通过驱动器根据解算结果发出控制指令，驱动第一万向反射镜的镜座运动。
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