WO2022001411A1 - 阵列基板、显示面板和显示装置 - Google Patents

阵列基板、显示面板和显示装置 Download PDF

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Publication number
WO2022001411A1
WO2022001411A1 PCT/CN2021/093633 CN2021093633W WO2022001411A1 WO 2022001411 A1 WO2022001411 A1 WO 2022001411A1 CN 2021093633 W CN2021093633 W CN 2021093633W WO 2022001411 A1 WO2022001411 A1 WO 2022001411A1
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Prior art keywords
clock
compensation capacitor
capacitor plate
array substrate
lead
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PCT/CN2021/093633
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English (en)
French (fr)
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WO2022001411A9 (zh
Inventor
张春旭
张云天
姜晓婷
杨海鹏
戴珂
Original Assignee
京东方科技集团股份有限公司
合肥京东方显示技术有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/789,141 priority Critical patent/US20230092089A1/en
Publication of WO2022001411A1 publication Critical patent/WO2022001411A1/zh
Publication of WO2022001411A9 publication Critical patent/WO2022001411A9/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen

Definitions

  • the present disclosure relates to the field of displays, and in particular, to an array substrate, a display panel and a display device.
  • Shift register (Gate On Array, GOA) refers to a gate drive circuit formed on an array substrate.
  • the advantage of GOA is that it can save a separate gate drive chip and reduce costs.
  • the GOA receives multiple control signals output by the driving integrated circuit, and then generates gate driving signals to control the display panel.
  • the GOA includes a cascade of multiple GOA units, and the multiple GOA units are arranged in a column direction.
  • the control signal includes multiple clock (Clock, CLK) signals, the multiple CLK signals are transmitted through multiple CLK lines, the CLK lines extend along the column direction, and the multiple CLK lines are sequentially arranged along the row direction in the peripheral area of the display panel , and then connected to the corresponding GOA units through the lateral CLK leads.
  • CLK clock
  • Embodiments of the present disclosure provide an array substrate, a display panel, and a display device.
  • inventions of the present disclosure provide an array substrate, the array substrate comprising:
  • a base substrate having a display area and a peripheral area surrounding the display area
  • clock lines located on the base substrate and in the peripheral region, the clock lines extending along a first direction;
  • clock leads located on the base substrate and in the peripheral region, the clock leads extend along a second direction, and the first direction and the second direction intersect;
  • a compensation capacitor electrode plate located on the base substrate and in the peripheral region, the compensation capacitor electrode plate is connected to the clock lead, and the compensation capacitor electrode plate is in a different layer from the clock lead, the The area of the compensation capacitor plate is inversely related to the length of the connected clock lead.
  • the clock lead includes a first clock lead, and the compensation capacitor plate connected to the first clock lead is in the shape of a long strip.
  • the elongated compensation capacitor electrode plate extends along the first direction.
  • the distance between the two compensation capacitor plates connected to the two adjacent first clock leads is greater than the width of the elongated compensation capacitor plates.
  • the clock lead further includes a second clock lead
  • the compensation capacitor plate connected to the second clock lead includes a first segment and a second segment connected in sequence along the first direction. In the second direction, the widths of the first segment and the second segment are different, and the length of the second clock lead is smaller than the length of the first clock lead.
  • the orthographic projection of the compensation capacitor plate on the base substrate is located within the orthographic projection of the clock line connected to the compensation capacitor plate on the base substrate.
  • the minimum distance between the orthographic projection of the compensation capacitor plate on the base substrate and the orthographic projection of other clock leads on the base substrate is greater than a first threshold, and the other clock leads are Refers to the clock lead that is not connected to the compensation capacitor plate.
  • a plurality of the clock leads are arranged along the first direction and divided into a plurality of cycles, and the clock leads in each cycle are arranged in sequence from short to long.
  • the compensation capacitor plates connected to the two shortest clock leads in each cycle include a first segment and a second segment connected in sequence along the first direction, and the second segment is connected to the second segment.
  • the widths of the first and second segments are different.
  • each of the clock leads is respectively connected to the compensation capacitor plate through a plurality of first via holes.
  • the array substrate further includes:
  • a pixel electrode located on the base substrate and in the display area
  • the compensation capacitor plate is in the same layer as the pixel electrode.
  • the array substrate further includes:
  • Other signal lines are located on the base substrate and in the peripheral region, the other signal lines extend along the first direction, and the clock lines are located between the other signal lines and the shift register unit between.
  • the array substrate further includes:
  • connection block one end of the clock lead is connected to the compensation capacitor plate through the connection block;
  • the width of the connection block is greater than the width of the clock lead.
  • an embodiment of the present disclosure provides a display panel, the display panel includes:
  • the color filter substrate is arranged in a box with the array substrate.
  • the color filter substrate includes: a metal light-shielding layer;
  • the compensation capacitor plate, the clock lead and the clock line respectively form capacitors with the metal light shielding layer
  • the sum of the capacitance formed by the compensation capacitor plate and the metal light-shielding layer, the capacitance formed by the clock lead connected to the compensation capacitor plate and the metal light-shielding layer is within the first capacitance range, and the first capacitance is within the range of the first capacitance.
  • the difference between the upper limit and the lower limit of a capacitance range is less than the second threshold.
  • an embodiment of the present disclosure provides a display device including the aforementioned array substrate.
  • the capacitance formed by the clock lead corresponding to each shift register unit is compensated by setting the compensation capacitor plate, and the area of the compensation capacitor is negatively correlated with the length of the connected clock lead, so that the original clock lead.
  • the loads of the clock leads corresponding to each shift register unit are matched, thereby ensuring the uniformity of the clock signal transmitted to each shift register unit through the clock lines and the clock leads, thereby ensuring the display uniformity of the display panel and improving the the display quality of the display panel.
  • FIG. 1 is a schematic structural diagram of an array substrate in the related art
  • FIG. 2 is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of a clock lead in the related art
  • FIG. 4 is a schematic structural diagram of an array substrate provided by an embodiment of the present disclosure.
  • FIG. 5 is a schematic structural diagram of a peripheral area provided by an embodiment of the present disclosure.
  • FIG. 6 is a schematic structural diagram of a peripheral area provided by an embodiment of the present disclosure.
  • Fig. 7 shows the positional relationship diagram of the clock lead and the compensation capacitor plate
  • Fig. 8 is the enlarged schematic diagram of S place in the structure shown in Fig. 6;
  • FIG. 9 is a schematic structural diagram of a peripheral area provided by an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of a film layer of a display area of an array substrate provided by an embodiment of the present disclosure
  • FIG. 11 is a schematic diagram of a film layer of a peripheral region of an array substrate provided by an embodiment of the present disclosure.
  • FIG. 12 is a schematic diagram of a film layer of a peripheral region of another array substrate provided by an embodiment of the present disclosure.
  • the array substrate includes a base substrate 100 , gate lines G, data lines S and transistors T.
  • FIG. 1 the array substrate includes a base substrate 100 , gate lines G, data lines S and transistors T.
  • the base substrate 100 has a display area 101 and a peripheral area 102 surrounding the display area 101 .
  • the gate lines G and the data lines S are located in the display area 101 .
  • the data line S extends along the first direction A
  • the gate line G extends along the second direction B
  • the first direction A and the second direction B intersect.
  • the gate lines G and the data lines S define a plurality of pixel regions 101A in the display region 101 .
  • Each pixel region 101 is provided with one transistor T, such as a thin film transistor.
  • the gate line G is connected to the control electrode of the transistor T
  • the data line is connected to the first electrode of the transistor T
  • the second electrode of the transistor T is connected to the storage capacitor Cs.
  • the control electrode is the gate of the transistor T
  • the first electrode and the second electrode are one of the source electrode and the drain electrode of the transistor T, respectively.
  • the array substrate further includes a clock line 110 , a clock lead 120 and a shift register unit 130 .
  • Clock (CLK) line 110 is located in peripheral area 102 .
  • the clock line 110 extends along the first direction A, and the clock lead 120 extends along the second direction B.
  • the clock line 110 is connected to the shift register unit 130 through the clock lead 120, the input of each shift register unit 130 corresponds to a clock lead 120 and a clock line 110, and the output of each shift register unit 130 corresponds to a gate line G.
  • FIG. 2 is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure.
  • the display panel includes: an array substrate 10 and a color filter substrate 20 .
  • the array substrate 10 and the color filter substrate 20 are assembled to form a liquid crystal cell, and the liquid crystal cell is filled with liquid crystal 30 .
  • the liquid crystal 30 is disposed in the display area 101 , and the display area 101 and the peripheral area 102 are separated by a frame sealant 40 .
  • the color filter substrate generally includes a substrate 200 and a metal light shielding layer 210 and a color filter layer 220 formed on the substrate 200 .
  • the metal light-shielding layer 210 is also called black matrix (BM).
  • BM black matrix
  • the metal light-shielding layer 210 covers the peripheral area 102 of the base substrate 100 .
  • the metal light-shielding layer 210 has a plurality of transparent The light area and the transparent area are filled by the color filter layer 220 .
  • the length of the clock line 110 connecting each shift register unit is equal, but the clock line connecting each shift register unit has the same length.
  • the lengths of the leads 120 are not equal, resulting in differences in the area of the clock leads 120 connecting each shift register unit, so that the overlapping areas of the clock leads 120 connecting each shift register unit and the metal light shielding layer 210 are different, resulting in the size of the formed capacitance. different, resulting in poor signal uniformity, thereby affecting the display uniformity of the display panel.
  • FIG. 3 In order to solve the problem of uniformity caused by different capacitances, the solution in the related art is shown in FIG. 3 , by bending in the clock lead 120 to balance the clock lead 120 of each shift register unit and the metal light shielding layer 210. capacitor size.
  • FIG. 4 is a schematic structural diagram of an array substrate provided by an embodiment of the present disclosure.
  • the array substrate includes: a base substrate 100 , a plurality of clock lines 110 , a plurality of clock leads 120 , a plurality of shift register units 130 and a compensation capacitor plate 140 .
  • the base substrate 100 has a display area 101 and a peripheral area 102 surrounding the display area; a clock line 110 is located on the base substrate 100 and in the peripheral area 102, and the clock line 110 extends along a first direction;
  • the clock lead 120 is located on the base substrate 100 and in the peripheral region 102, the clock lead 120 extends along a second direction, the first direction and the second direction intersect;
  • the shift register unit 130 is located on On the base substrate 100 and in the peripheral region 102, the shift register unit 130 and the clock line 110 are connected through the clock lead 120;
  • the compensation capacitor plate 140 is located on the base substrate 100 and in the peripheral area 102, the compensation capacitor plate 140 is connected to the clock lead 120, and the compensation capacitor plate 140 is on a different layer from the clock lead 120, the compensation capacitor plate 140
  • the area is negatively related to the length of the connected clock lead 120 .
  • the negative correlation means that the longer the length of the clock lead 120 connected to the compensation capacitor plate 140 is, the smaller the area of the compensation capacitor plate 140 is; the length of the clock lead 120 connected to the compensation capacitor plate 140 is smaller. The smaller it is, the larger the area of the compensation capacitor plate 140 is.
  • the capacitance formed by the clock lead corresponding to each shift register unit is compensated by setting the compensation capacitor plate, and the area of the compensation capacitor is negatively correlated with the length of the connected clock lead, so that the original clock lead.
  • the loads of the clock leads corresponding to each shift register unit are matched, thereby ensuring the uniformity of the clock signal transmitted to each shift register unit through the clock lines and the clock leads, thereby ensuring the display uniformity of the display panel and improving the the display quality of the display panel.
  • the compensation capacitor plate 140 is in a different layer from the clock lead 120. Compared with the method of bending the clock lead 120, it does not occupy the area of the layer where the clock lead 120 is located, and the compensation capacitor plate 140 is better arranged, which can ensure the The design of the compensation capacitor plate 140 can be applied in products such as large-sized 8k.
  • the length of the clock lead 120 becomes longer and longer, and accordingly, the area of the compensation capacitor plate 140 becomes smaller and smaller.
  • FIG. 5 is a schematic structural diagram of a peripheral area provided by an embodiment of the present disclosure.
  • a plurality of the clock leads 120 are arranged along the first direction A and divided into a plurality of periods M, each of the periods M includes a plurality of clock leads 120, and the The clock leads 120 are arranged in order from short to long. That is, the aforementioned FIG. 4 only shows the clock lead 120 of one cycle, and FIG. 5 shows the clock lead 120 of three cycles.
  • the clock line 110 may provide a clock signal to the shift register unit 130 corresponding to the clock line 120 of each cycle in time division.
  • the clock leads 120 in each period M are sequentially arranged from top to bottom in the order from short to long. In other implementation manners, the clock leads 120 in each period M may also be sequentially arranged from bottom to top in an order from short to long.
  • the shape of the compensation capacitor electrode plate 140 may be a rectangle.
  • the rectangular compensation capacitor plate 140 is used to facilitate the design and manufacture of the display panel.
  • the shape of the compensation capacitor electrode plate 140 may also be other regular shapes, such as a circle, a triangle, etc., and the shape of the compensation capacitor electrode plate 140 may also be an irregular shape.
  • FIG. 6 is a schematic structural diagram of a peripheral area provided by an embodiment of the present disclosure.
  • the shape of the compensation capacitor plate 140 has both rectangular and irregular shapes. Wherein, the rectangle may be a long strip as shown in FIG. 6 .
  • FIG. 7 shows a positional relationship diagram of the clock lead 120 and the compensation capacitor plate 140 alone.
  • the clock lead 120 includes a first clock lead 1201
  • the compensation capacitor plate 140 connected to the first clock lead 1201 is in the shape of a long strip.
  • the clock lead 120 further includes a second clock lead 1202, and the compensation capacitor plate 140 connected to the second clock lead 1202 includes a first segment 141 and a second segment 142 arranged along the first direction.
  • the widths of the segment 141 and the second segment 142 are different, and the length of the second clock lead 1202 is smaller than the length of the first clock lead 1201 .
  • the lengths of the first segment 141 and the second segment 142 may be different, for example, the length of the first segment 141 is greater than that of the second segment 142 , or the length of the second segment 142 is greater than that of the first segment 141 .
  • the length of the first clock lead 1201 is relatively large, and the size of the corresponding compensation capacitor plate 140 is usually small.
  • the shape of the compensation capacitor plate 140 is designed to be a long strip, which is convenient for production and control. Distance from other clock lines and clock leads.
  • the length of the second clock lead 1202 is small, and the size of the corresponding compensation capacitor plate 140 is usually larger.
  • designing the shape of the compensation capacitor plate 140 to be a long strip will cause the length of the compensation capacitor plate 140 to be too large, which will cause As a result, the compensation capacitor plate 140 overlaps with other clock leads 120 .
  • the shape of the compensation capacitor plate 140 is designed into several sections with different widths, which can reduce the length of the compensation capacitor plate, avoid overlapping the compensation capacitor plate with other clock traces, and reduce interference .
  • the elongated compensation capacitor plate 140 extends along the first direction A, which can ensure the distance from other clock lines and clock leads, and is convenient for design and manufacture.
  • the distance D between the two compensation capacitor plates 140 connected to the two adjacent first clock leads 1201 is greater than the width W of the elongated compensation capacitor plates 140 . This setting can ensure the distance between adjacent compensation capacitor plates and avoid mutual interference.
  • the distance D between the two compensation capacitor electrode plates 140 may refer to the minimum distance between the two compensation capacitor electrode plates 140 .
  • the first and second sections of the compensation capacitor plate 140 are both rectangular, and in other implementations, the first and second sections may also have other regular or irregular shapes.
  • the compensation capacitor plate 140 connected to the second clock lead 1202 is L-shaped, and the compensation capacitor plate 140 includes a first segment and a second segment.
  • the shape of the compensation capacitor plate 140 connected to the second clock lead 1202 may also be other shapes, such as a T shape, a cross shape, and the like. Taking the cross type as an example, the compensation capacitor plate 140 includes a first segment, a second segment and a first segment arranged in sequence. Of course, the number of the first segment and the second segment may be more or more in other implementations. few.
  • the orthographic projection of the compensation capacitor plate 140 on the base substrate 100 is located on the base substrate 100 of the clock line 110 connected to the compensation capacitor plate 140 in the orthographic projection. In this way, the overlapping of the compensation capacitor plate 140 and the disconnected clock line 110 can be avoided, and a certain distance can be maintained, thereby reducing the interference between the compensation capacitor plate 140 and the disconnected clock line 110 .
  • the minimum distance C between the orthographic projection of the compensation capacitor plate 140 on the base substrate 100 and the orthographic projections of other clock leads 120 on the base substrate 100 is greater than the first threshold
  • the other clock leads 120 refer to the clock leads 120 not connected to the compensation capacitor plate 140 .
  • FIG. 7 shows the projected minimum distance C between the same compensation capacitor plate 140 and two adjacent other clock leads 120 , and both minimum distances C need to be greater than the first threshold.
  • the specific value of the first threshold can be set according to parameters such as the size and voltage of the display panel, so as to avoid large interference between the compensation capacitor plate and other clock leads 120 .
  • the two shortest clock leads 120 in each cycle are the second clock leads, and the two shortest clock leads 120 in each cycle are
  • the connected compensation capacitor plates 140 include a first segment 141 and a second segment 142 connected in sequence along the first direction.
  • the number of the second clock leads in each cycle may also be one or more.
  • each of the clock leads 120 is respectively connected to the compensation capacitor plate 140 through a plurality of first vias, and the stability of the electrical connection is ensured through the connection of the plurality of vias.
  • one end of the clock lead 120 is connected to the compensation capacitor plate 140 through a plurality of first via holes, and the other end is connected to the shift register unit 130 .
  • FIG. 8 is an enlarged schematic view of S in the structure shown in FIG. 6 .
  • one end of each clock lead 120 may be provided with a connection block 121, and the connection block 121 is connected to the compensation capacitor plate 140 through a plurality of first via holes (not shown in the figure), for example, in the figure 3 shown.
  • the connection block 121 may also be connected to the clock line 110 through a plurality of via holes, for example, three or the like.
  • connection block 121 is interdigitated, that is, the connection block 121 includes a connection block body and a plurality of bumps 122 connected to the connection block body, and the plurality of bumps 122 are arranged along the first direction A,
  • the connection block is connected to the first via hole through a plurality of bumps 122 , so as to be connected to the compensation capacitor plate 140 .
  • Such a design facilitates the connection between the clock lead 120 and the compensation capacitor plate 140, and is connected through a plurality of via holes to ensure the connection strength of the two.
  • connection block 121 In the first direction A, the width of the connection block 121 is greater than the width of the clock lead 120 . On the one hand, it is ensured that the connection block 121 has enough area to realize the connection with the compensation capacitor plate 140 through a plurality of via holes.
  • This connection scheme can meet the scene of large-size 8k display panel with multiple pixel rows and small size.
  • FIG. 9 is a schematic structural diagram of a peripheral area provided by an embodiment of the present disclosure.
  • the clock leads 120 are not evenly spaced. At this time, some of the clock leads 120 are connected to the middle of the compensation capacitor plate 140 , and some of the clock leads 120 are connected to the end of the compensation capacitor plate 140 . , so as to ensure the distance between each compensation capacitor plate 140 and the disconnected clock leads.
  • the array substrate further includes: other signal lines 150 .
  • Other signal lines 150 are located on the base substrate 100 and within the peripheral region 102 , the other signal lines 150 extend along the first direction, and the clock line 110 is located between the other signal lines 150 and the between shift register units 130 .
  • the other signal lines 150 may be start signal lines, or common electrode signal lines.
  • the clock line 110 may be a mesh line.
  • the purpose of designing the clock line 110 as a mesh line is to facilitate the patterning process. During the patterning process, the light from the array The bottom of the substrate is illuminated upward, and the mesh clock line 110 facilitates light transmission.
  • FIG. 10 is a schematic diagram of a film layer of a display area of an array substrate provided by an embodiment of the present disclosure.
  • the array substrate includes a base substrate 100 , a gate (Gate) layer 111 , a gate insulating (Gate Insulator, GI) layer 112 , an active (Active) layer 113 , a source-drain A source drain (SD) layer 114 , an insulating protective layer 115 and a pixel electrode layer 116 .
  • the source and drain electrodes of the thin film transistor are both located in the source-drain layer 114 , the gate electrode is located in the gate electrode layer 111 , and the gate electrode, source electrode, drain electrode and active layer constitute the thin film transistor.
  • the structure shown in FIG. 10 is only an example.
  • the array substrate may also adopt other film layer structures, as long as the functions of the array substrate can be realized.
  • the structure shown in FIG. 10 corresponds to a bottom-gate thin film transistor.
  • the corresponding thin film transistor may also be a top-gate or double-gate thin film transistor.
  • the gate insulating layer 112 is located between the active layer 113 and the gate layer 111 , and the active layer 113 and the gate layer 111 are separated by the gate insulating layer 112 to ensure that the active layer 113 and the gate layer 111 are separated from each other.
  • the gate layers 111 are separated from each other and can transmit signals independently.
  • the base substrate 100 may be a transparent substrate, such as a glass substrate, a plastic substrate, and the like.
  • the gate layer 111 and the source and drain layers 114 may be metal layers or indium tin oxide layers. The stability of electrical signal transmission between the gate layer 111 and the source and drain layers 114 is ensured.
  • the materials of the gate layer 111 and the source and drain layers 114 may be the same or different.
  • the gate insulating layer 112 and the insulating protective layer 115 may be inorganic insulating layers, such as silicon nitride layers or silicon oxynitride layers, or organic insulating layers, such as annular resin insulating layers.
  • Silicon nitride, silicon oxynitride and ring-shaped resin have good insulating properties, which ensure the insulating properties of the gate insulating layer 112 and the insulating protective layer 115 .
  • the active layer 113 may be a polysilicon or single crystal silicon layer.
  • the pixel electrode layer 116 may be a transparent conductive thin film layer, such as an indium tin oxide layer.
  • the insulating protection layer 115 is provided with a second via hole 151 , and the pixel electrode 160 in the pixel electrode layer 116 is connected to the source of the thin film transistor through the second via hole 151 .
  • the array substrate may further include another transparent conductive thin film layer under the gate layer 111, the transparent conductive thin film layer and the gate electrode layer 111 are insulated and arranged, and the function of the transparent conductive thin film layer is to form a common (COM) electrode. .
  • COM common
  • the array substrate includes a base substrate 100 , a gate layer 111 , a gate insulating layer 112 , a source and drain layer 114 , an insulating protection layer 115 and a pixel electrode layer 116 which are stacked in sequence.
  • the clock line 110 is located in the gate layer 111 , the clock lead 120 is located in the source and drain layers 112 , and the compensation capacitor plate 140 is located in the pixel electrode layer 116 .
  • the clock lead 120 and the clock lead 110 are connected through a third via hole 131 , and the compensation capacitor plate 140 and the clock lead 120 are connected through a first via hole 123 .
  • FIG. 12 is a schematic diagram of a film layer in a peripheral area of another array substrate provided by an embodiment of the present disclosure, and the schematic diagram of the film layer in the peripheral area corresponds to the section at A-A in FIG. 8 .
  • the structure shown in FIG. 12 is different from the structure shown in FIG. 11 in that the third via hole 131 is not connected to the clock lead 120 and the clock line 110 , but is connected to the compensation capacitor plate 140 and the clock line 110 .
  • the first via hole 123 and the third via hole 131 can be formed in one patterning process, which is simpler than the structure fabrication process in FIG. 11 .
  • An embodiment of the present disclosure further provides a display panel, which is a liquid crystal display panel.
  • the display panel includes: an array substrate 10 and a color filter substrate 20 , and the array substrate 10 and the color filter substrate 20 are assembled into a cell. set up.
  • the array substrate 10 is an array substrate as shown in any one of FIGS. 4 to 12 .
  • the color filter substrate 20 includes: a metal light shielding layer 210 .
  • the compensation capacitor plate 140 , the clock lead 120 and the clock line 110 respectively form capacitors with the metal light shielding layer 210 ; the capacitance formed by the compensation capacitor plate 140 and the metal light shielding layer 310 , the The sum of the capacitance formed by the clock lead 120 connected to the compensation capacitor plate 140 and the metal light shielding layer 310 is within the first capacitance range, and the difference between the upper limit and the lower limit of the first capacitance range is smaller than the second threshold.
  • the specific value of the second threshold can be determined based on the requirement of display uniformity, and the second threshold must be able to ensure the uniformity of the display panel.
  • the capacitance formed by each compensation capacitor plate 140 and the metal light shielding layer 310 is usually set as the sum of the capacitance formed by the connected clock lead 120 and the metal light shielding layer 310 .
  • the capacitance formed by each compensation capacitor plate 140 and the metal light shielding layer 310 and the connected clock lead 120 and The sum of the capacitances formed by the metal light shielding layer 310 is all equal to the set value, but it needs to be guaranteed to be within a capacitance range to satisfy the uniformity of the display panel.
  • the compensation capacitor plate 140 is not on the same layer as the clock lead 120 and the clock line 110, so the distance between the capacitor plates formed by the compensation capacitor plate 140 and the metal light shielding layer 310 is different from the clock lead 120 or the clock line 110 and the metal light shielding layer.
  • the capacitance formed by 310 is different, so the capacitance formed by the compensation capacitor plate 140 and the metal light shielding layer 310 is different from the capacitance formed by the clock lead 120 or the clock line 110 and the metal light shielding layer 310 of the same area.
  • the capacitance formed by the clock lead corresponding to each shift register unit is compensated by setting the compensation capacitor plate, and the area of the compensation capacitor is negatively correlated with the length of the connected clock lead, so that the original clock lead.
  • the loads of the clock leads corresponding to each shift register unit are matched, thereby ensuring the uniformity of the clock signal transmitted to each shift register unit through the clock lines and the clock leads, thereby ensuring the display uniformity of the display panel and improving the the display quality of the display panel.
  • An embodiment of the present disclosure further provides a display device, where the display device includes the display panel described in any one of the above.
  • the display device may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, and a navigator.
  • a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, and a navigator.
  • the capacitance formed by the clock lead corresponding to each shift register unit is compensated by setting the compensation capacitor plate, and the area of the compensation capacitor is negatively correlated with the length of the connected clock lead, so that the original clock lead.
  • the loads of the clock leads corresponding to each shift register unit are matched, thereby ensuring the uniformity of the clock signal transmitted to each shift register unit through the clock lines and the clock leads, thereby ensuring the display uniformity of the display panel and improving the the display quality of the display panel.

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Abstract

本公开是关于一种阵列基板、显示面板和显示装置，属于显示器领域。阵列基板包括：衬底基板，具有显示区域和围绕显示区域的外围区域；多根时钟线，位于衬底基板上且在外围区域内，时钟线沿第一方向延伸；多根时钟引线，位于衬底基板上且在外围区域内，时钟引线沿第二方向延伸，第一方向和第二方向交叉；多个移位寄存器单元，位于衬底基板上且在外围区域内，移位寄存器单元和时钟线之间通过时钟引线连接；补偿电容极板，位于衬底基板上且在外围区域内，补偿电容极板和时钟引线连接，且补偿电容极板与时钟引线不同层，补偿电容极板的面积和所连的时钟引线的长度负相关。

Description

阵列基板、显示面板和显示装置
本公开要求于2020年6月28日提交的申请号为202010598503.9、发明名称为“阵列基板、显示面板和显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示器领域，特别涉及一种阵列基板、显示面板和显示装置。
背景技术
移位寄存器(Gate On Array，GOA)是指在阵列基板上形成的栅极驱动电路，GOA的优点是可以省去单独的栅极驱动芯片，降低成本。
GOA接收驱动集成电路输出的多路控制信号，然后生成栅极驱动信号控制显示面板。GOA包括级联的多个GOA单元，多个GOA单元沿列方向排布。控制信号包括多路时钟(Clock，CLK)信号，多路CLK信号通过多根CLK线传输，CLK线沿着列方向延伸，且多根CLK线沿着行方向依次排布在显示面板的外围区域，然后通过横向的CLK引线分别连接到对应的GOA单元。
发明内容
本公开实施例提供了一种阵列基板、显示面板和显示装置。
一方面，本公开实施例提供了一种阵列基板，所述阵列基板包括：
衬底基板，具有显示区域和围绕所述显示区域的外围区域；
多根时钟线，位于所述衬底基板上且在所述外围区域内，所述时钟线沿第一方向延伸；
多根时钟引线，位于所述衬底基板上且在所述外围区域内，所述时钟引线沿第二方向延伸，所述第一方向和所述第二方向交叉；
多个移位寄存器单元，位于所述衬底基板上且在所述外围区域内，所述移位寄存器单元和所述时钟线之间通过所述时钟引线连接；
补偿电容极板，位于所述衬底基板上且在所述外围区域内，所述补偿电容极板和所述时钟引线连接，且所述补偿电容极板与所述时钟引线不同层，所述 补偿电容极板的面积和所连的所述时钟引线的长度负相关。
可选地，所述时钟引线包括第一时钟引线，所述第一时钟引线所连的所述补偿电容极板的形状为长条形。
可选地，长条形的所述补偿电容极板沿所述第一方向延伸。
可选地，相邻的两根所述第一时钟引线所连的两个所述补偿电容极板的间距大于长条形的所述补偿电容极板的宽度。
可选地，所述时钟引线还包括第二时钟引线，所述第二时钟引线所连的所述补偿电容极板包括沿所述第一方向依次相连的第一段和第二段，在所述第二方向上，所述第一段和第二段的宽度不同，所述第二时钟引线的长度小于所述第一时钟引线的长度。
可选地，所述补偿电容极板在所述衬底基板上的正投影，位于所述补偿电容极板所连的所述时钟线在所述衬底基板上的正投影内。
可选地，所述补偿电容极板在所述衬底基板上的正投影和其他的时钟引线在所述衬底基板上的正投影的最小间距大于第一阈值，所述其他的时钟引线是指不与所述补偿电容极板相连的时钟引线。
可选地，多根所述时钟引线沿所述第一方向排列并分为多个周期，每个所述周期内的所述时钟引线按从短到长的顺序依次排布。
可选地，每个所述周期内最短的两根所述时钟引线所连的所述补偿电容极板包括沿所述第一方向依次相连的第一段和第二段，在所述第二方向上，所述第一段和第二段的宽度不同。
可选地，每根所述时钟引线分别通过多个第一过孔与所述补偿电容极板连接。
可选地，所述阵列基板还包括：
像素电极，位于所述衬底基板上且在所述显示区域内；
所述补偿电容极板与所述像素电极同层。
可选地，所述阵列基板还包括：
其他信号线，位于所述衬底基板上且在所述外围区域内，所述其他信号线沿所述第一方向延伸，所述时钟线位于所述其他信号线和所述移位寄存器单元之间。
可选地，所述阵列基板还包括：
叉指状的连接块，所述时钟引线的一端通过所述连接块与所述补偿电容极 板连接；
在所述第一方向上，所述连接块的宽度大于所述时钟引线的宽度。
另一方面，本公开实施例提供了一种显示面板，所述显示面板包括：
如前所述的阵列基板；
彩膜基板，与所述阵列基板对盒设置。
可选地，所述彩膜基板，包括：金属遮光层；
所述补偿电容极板、所述时钟引线和所述时钟线分别与所述金属遮光层形成电容；
所述补偿电容极板与所述金属遮光层形成的电容、所述补偿电容极板所连的所述时钟引线与所述金属遮光层形成的电容之和在第一电容范围内，所述第一电容范围的上限和下限之差小于第二阈值。
另一方面，本公开实施例提供了一种显示装置，所述显示装置包括如前所述的阵列基板。
本公开实施例提供的技术方案带来的有益效果是：
在本公开实施例中，通过设置补偿电容极板来对各个移位寄存器单元对应的时钟引线形成的电容进行补偿，补偿电容的面积和所连的时钟引线的长度负相关，从而使得原本时钟引线形成的电容越小的移位寄存器单元，对应的补偿电容越大，从而保证各个移位寄存器单元对应的时钟引线与金属遮光层形成的电容和补偿电容极板与金属遮光层形成的电容之和相当，使得各个移位寄存器单元对应的时钟引线的负载匹配，从而保证了通过时钟线和时钟引线传输到各个移位寄存器单元的时钟信号的均一性，进而保证了显示面板的显示均一性，提高了显示面板的显示品质。
附图说明
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是相关技术中的阵列基板的结构示意图；
图2是本公开实施例提供的一种显示面板的结构示意图；
图3是相关技术中时钟引线的结构示意图；
图4是本公开实施例提供的一种阵列基板的结构示意图；
图5是本公开实施例提供的一种外围区域的结构示意图；
图6是本公开实施例提供的一种外围区域的结构示意图；
图7示出了时钟引线及补偿电容极板的位置关系图；
图8是图6所示的结构中S处的放大示意图；
图9是本公开实施例提供的一种外围区域的结构示意图；
图10是本公开实施例提供的一种阵列基板的显示区域的膜层示意图；
图11是本公开实施例提供的一种阵列基板的外围区域的膜层示意图；
图12是本公开实施例提供的另一种阵列基板的外围区域的膜层示意图。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚，下面将结合附图对本公开实施方式作进一步地详细描述。
下面先结合图1对阵列基板的结构进行说明，参见图1，阵列基板包括衬底基板100、栅线G、数据线S和晶体管T。
衬底基板100具有显示区域101和围绕显示区域101的外围区域102。
栅线G和数据线S位于显示区域101中。数据线S沿着第一方向A延伸，栅线G沿着第二方向B延伸，第一方向A和第二方向B交叉。栅线G和数据线S在显示区域101中限制出多个像素区域101A。每个像素区域101内均设置有1个晶体管T，例如薄膜晶体管。栅线G与晶体管T的控制极连接，数据线与晶体管T的第一极连接，晶体管T的第二极连接存储电容Cs。其中，控制极为晶体管T的栅极，第一极和第二极分别为晶体管T的源极和漏极中的一个。
阵列基板还包括时钟线110、时钟引线120和移位寄存器单元130。
时钟(CLK)线110、时钟引线120和移位寄存器单元(GOA)130均位于外围区域102中。时钟线110沿第一方向A延伸，时钟引线120沿第二方向B延伸。
时钟线110通过时钟引线120连接移位寄存器单元130，每个移位寄存器单元130的输入对应一根时钟引线120和一根时钟线110，每个移位寄存器单元 130的输出对应一根栅线G。
图2是本公开实施例提供的显示面板的结构示意图。参见图2，显示面板包括：阵列基板10和彩膜基板20，阵列基板10和彩膜基板20对盒设置形成液晶盒，液晶盒内注有液晶30。
液晶30设置在显示区域101，显示区域101和外围区域102之间通过封框胶40隔离。
彩膜基板通常包括衬底200和形成在衬底200上金属遮光层210和彩膜层220。
其中，金属遮光层210，也称黑矩阵(Black Matrix，BM)，金属遮光层210覆盖衬底基板100的外围区域102，在与显示区域101对应的部分，金属遮光层210上具有多个透光区域，透光区域被彩膜层220所填充。
前述时钟线110和金属遮光层210之间具有电容，前述时钟引线120和金属遮光层210之间具有电容，连接各个移位寄存器单元的时钟线110长度相等，但连接各个移位寄存器单元的时钟引线120长度不等，导致连接各个移位寄存器单元的时钟引线120的面积存在差异，因而使得连接各个移位寄存器单元的时钟引线120与金属遮光层210的交叠面积不同，造成形成的电容大小不同，导致信号均一性较差，从而影响显示面板的显示均一性。
为了解决因为电容大小不同造成的均一性问题，相关技术中的解决方案如图3所示，通过在时钟引线120中弯折来平衡各个移位寄存器单元的时钟引线120与金属遮光层210形成的电容大小。
但是对于大尺寸8k显示面板而言，由于像素行数多，尺寸小，每行像素的宽度小，导致没有足够空间进行时钟引线的弯折补偿。但是不补偿电容，又会造成每根时钟线和时钟引线上的负载不同，再加上大尺寸8k产品本身时钟线和时钟引线电阻大的特点，这使得显示面板容易出现因电容差异大而形成的横纹不良，显示品质差。
图4是本公开实施例提供的一种阵列基板的结构示意图。参见图4，所述阵列基板包括：衬底基板100、多根时钟线110、多根时钟引线120、多个移位寄存器单元130和补偿电容极板140。
其中，衬底基板100具有显示区域101和围绕显示区域的外围区域102；时钟线110位于所述衬底基板100上且在所述外围区域102内，所述时钟线110 沿第一方向延伸；时钟引线120位于所述衬底基板100上且在所述外围区域102内，所述时钟引线120沿第二方向延伸，所述第一方向和所述第二方向交叉；移位寄存器单元130位于所述衬底基板100上且在所述外围区域102内，所述移位寄存器单元130和所述时钟线110之间通过所述时钟引线120连接；补偿电容极板140位于所述衬底基板100上且在所述外围区域102内，所述补偿电容极板140和所述时钟引线120连接，且所述补偿电容极板140与所述时钟引线120不同层，所述补偿电容极板140的面积和所连的所述时钟引线120的长度负相关。
这里，负相关是指，补偿电容极板140所连的所述时钟引线120的长度越大，补偿电容极板140的面积越小；补偿电容极板140所连的所述时钟引线120的长度越小，补偿电容极板140的面积越大。
在本公开实施例中，通过设置补偿电容极板来对各个移位寄存器单元对应的时钟引线形成的电容进行补偿，补偿电容的面积和所连的时钟引线的长度负相关，从而使得原本时钟引线形成的电容越小的移位寄存器单元，对应的补偿电容越大，从而保证各个移位寄存器单元对应的时钟引线与金属遮光层形成的电容和补偿电容极板与金属遮光层形成的电容之和相当，使得各个移位寄存器单元对应的时钟引线的负载匹配，从而保证了通过时钟线和时钟引线传输到各个移位寄存器单元的时钟信号的均一性，进而保证了显示面板的显示均一性，提高了显示面板的显示品质。
另外，所述补偿电容极板140与所述时钟引线120不同层，相比弯折时钟引线120的方式，不占用时钟引线120所在层的面积，补偿电容极板140更好布置，能够保证该补偿电容极板140设计可以应用在大尺寸8k等产品内。
如图4所示，沿着第二方向B，时钟引线120的长度越来越长，相应地，补偿电容极板140的面积越来越小。
图5是本公开实施例提供的一种外围区域的结构示意图。参见图5，多根所述时钟引线120沿所述第一方向A排列并分为多个周期M，每个所述周期M包括多根时钟引线120，每个所述周期M内的所述时钟引线120按从短到长的顺序依次排布。也即前述附图4仅示出了一个周期的时钟引线120，图5示出了3个周期的时钟引线120。时钟线110可以分时为各个周期的时钟引线120对应的移位寄存器单元130提供时钟信号。
在图5中，每个所述周期M内的所述时钟引线120，从上到下按照从短到 长的顺序依次排布。在其他实现方式中，每个所述周期M内的所述时钟引线120，也可以从下到上按照从短到长的顺序依次排布。
如图4和图5所示，在本公开实施例中，补偿电容极板140的形状可以为矩形。采用矩形的补偿电容极板140，方便显示面板的设计和制作。
在其他实施例中，补偿电容极板140的形状也可以为其他规则形状，例如圆形、三角形等，补偿电容极板140的形状也可以为不规则形状。
图6是本公开实施例提供的一种外围区域的结构示意图。参见图6，补偿电容极板140的形状同时存在矩形和不规则形状。其中，矩形可以是图6中所示的长条形。
图7单独示出了时钟引线120及补偿电容极板140的位置关系图。参见图6和图7，时钟引线120包括第一时钟引线1201，所述第一时钟引线1201所连的所述补偿电容极板140的形状为长条形。
时钟引线120还包括第二时钟引线1202，第二时钟引线1202所连的补偿电容极板140包括沿第一方向排列的第一段141和第二段142，在第二方向上，所述第一段141和第二段142的宽度不同，所述第二时钟引线1202的长度小于所述第一时钟引线1201的长度。
在本公开实施例中，第一段141和第二段142的长度可以不同，例如第一段141的长度大于第二段142的长度，或者第二段142的长度大于第一段141的长度。
如图6所示，第一时钟引线1201长度较大，对应的补偿电容极板140的尺寸通常较小，此时将补偿电容极板140的形状设计为长条形既方便制作，又方便控制与其它时钟线和时钟引线的距离。第二时钟引线1202长度较小，对应的补偿电容极板140的尺寸通常较大，此时将补偿电容极板140的形状设计为长条形会造成补偿电容极板140长度过大，这样会导致补偿电容极板140与其他时钟引线120发生重叠。为了保证形成的电容均一性，将补偿电容极板140的形状设计为宽度不一的几段，可以减小补偿电容极板的长度，避免补偿电容极板与其他时钟走线交叠，减少干扰。
通常，长条形的所述补偿电容极板140沿所述第一方向A延伸，可以保证与其它时钟线和时钟引线的距离，同时方便设计和制作。
参见图7，相邻的两根所述第一时钟引线1201所连的两个所述补偿电容极板140的间距D大于长条形的所述补偿电容极板140的宽度W。这样设置可以 保证相邻的补偿电容极板之间的距离，避免相互干扰影响。
这里，两个所述补偿电容极板140的间距D可以是指两个所述补偿电容极板140的最小距离。
再次参见图6和图7，补偿电容极板140的第一段和第二段均为矩形，在其他实现方式中，第一段和第二段也可以为其他规则或不规则形状。
再次参见图6和图7，所述第二时钟引线1202所连的所述补偿电容极板140的形状为L型，此时补偿电容极板140包括一个第一段和一个第二段。在其他实现方式中，第二时钟引线1202所连的所述补偿电容极板140的形状也可以为其他形状，例如T形、十字型等。以十字型为例，此时补偿电容极板140包括依次设置的第一段、第二段和第一段，当然第一段和第二段的数量在其他实现方式中也可以更多或更少。
在本公开实施例中，所述补偿电容极板140在所述衬底基板100上的正投影，位于所述补偿电容极板140所连的所述时钟线110在所述衬底基板100上的正投影内。这样设计，可以避免补偿电容极板140与不相连的时钟线110交叠，且能够保持一定距离，减小补偿电容极板140与不相连的时钟线110之间的干扰。
在本公开实施例中，所述补偿电容极板140在所述衬底基板100上的正投影和其他的时钟引线120在所述衬底基板100上的正投影的最小间距C大于第一阈值，所述其他的时钟引线120是指不与所述补偿电容极板140相连的时钟引线120。
图7示出了同一个补偿电容极板140和两个相邻的其他时钟引线120的投影的最小间距C，两个最小间距C都需要大于第一阈值。第一阈值的具体数值，可以根据显示面板的尺寸、电压等参数设定，以避免补偿电容极板与其他的时钟引线120间产生较大干扰。
在图6和图7所示的显示面板中，每个所述周期内最短的两根所述时钟引线120为第二时钟引线，每个所述周期内最短的两根所述时钟引线120所连的所述补偿电容极板140包括沿所述第一方向依次相连的第一段141和第二段142。
在其他实现方式中，每个所述周期内第二时钟引线的数量也可以为1根或多根。
在本公开实施例中，每根所述时钟引线120分别通过多个第一过孔与所述补偿电容极板140连接，通过多个过孔连接保证电连接的稳定性。
示例性地，时钟引线120的一端通过多个第一过孔与所述补偿电容极板140连接，另一端与移位寄存器单元130连接。
图8是图6所示的结构中S处的放大示意图。参见图7和图8，每根时钟引线120的一端可以设置有一个连接块121，连接块121通过多个第一过孔(图中未示出)与补偿电容极板140连接，例如图中所示的3个。同样地，连接块121也可以通过多个过孔与时钟线110连接，例如3个等。
示例性地，连接块121的形状为叉指状，也即连接块121包括连接块本体和连接在连接块本体上的多个凸点122，多个凸点122沿着第一方向A排列，连接块通过多个凸点122与第一过孔连接，从而连接到补偿电容极板140。这样设计方便时钟引线120和补偿电容极板140的连接，且通过多个过孔连接，保证二者的连接强度。
在第一方向A上，连接块121的宽度大于时钟引线120的宽度。一方面，保证连接块121有足够的面积，实现和补偿电容极板140之间通过多个过孔连接，另一方面，设计连接块进行连接，时钟引线120的宽度不用设计得过大，使得该连接方案可以满足大尺寸8k显示面板像素行数多尺寸小的场景。
在图6所示的结构中，多根时钟引线120均匀间隔布置，每根时钟引线120均连接在补偿电容极板140的中部。图9是本公开实施例提供的一种外围区域的结构示意图。在图9所示的结构中，多根时钟引线120并非均匀间隔布置，此时，部分时钟引线120连接在补偿电容极板140的中部，部分时钟引线120连接在补偿电容极板140的端部，以保证各个补偿电容极板140与不相连的时钟引线间的距离。
再次参见图6和图9，所述阵列基板还包括：其他信号线150。其他信号线150位于所述衬底基板100上且在所述外围区域102内，所述其他信号线150沿所述第一方向延伸，所述时钟线110位于所述其他信号线150和所述移位寄存器单元130之间。
示例性地，其他信号线150可以为起始信号线、或者公共电极信号线。
如图6和图9所示，在本公开实施例中，时钟线110可以为网状线，将时钟线110设计成网状线的目的是方便图形化工艺，图形化工艺时，光从阵列基板的底部向上照射，网状时钟线110便于透光。
下面结合图10～图12对阵列基板在显示区域和外围区域的膜层结构进行说明。
图10是本公开实施例提供的一种阵列基板的显示区域的膜层示意图。参见图10，在显示区域，阵列基板包括依次层叠设置的衬底基板100、栅极(Gate)层111、栅极绝缘(Gate Insulator，GI)层112、有源(Active)层113、源漏极(Source Drain，SD)层114、绝缘保护层115和像素电极层116。
薄膜晶体管的源极和漏极均位于源漏极层114中，栅极位于栅极层111中，栅极、源极、漏极和有源层构成薄膜晶体管。当然图10所示结构仅为一种示例，在其他实施例中，阵列基板也可以采用其他膜层结构，只要能够实现阵列基板的功能即可。例如图10所示结构对应底栅型薄膜晶体管，在其他实施例中，对应的薄膜晶体管也可以为顶栅型或者双栅型薄膜晶体管。
在本公开实施例中，栅极绝缘层112位于有源层113与栅极层111之间，通过栅极绝缘层112将有源层113与栅极层111隔开，保证有源层113与栅极层111之间相互隔开能够独立传输信号。
示例性地，衬底基板100可以为透明基板，例如玻璃基板、塑料基板等。栅极层111和源漏极层114可以为金属层或氧化铟锡层。保证栅极层111和源漏极层114的电信号传输的稳定性。栅极层111和源漏极层114的材料可以相同也可以不同。栅极绝缘层112和绝缘保护层115可以为无机绝缘层，例如氮化硅层或者氮氧化硅层，也可以为有机绝缘层，例如环形树脂绝缘层。氮化硅、氮氧化硅和环形树脂的绝缘性好，保证栅极绝缘层112和绝缘保护层115的绝缘性。有源层113可以为多晶硅或单晶硅层。像素电极层116可以为透明导电薄膜层，例如氧化铟锡层。
如图10所示，绝缘保护层115上开设有第二过孔151，像素电极层116中的像素电极160通过第二过孔151与薄膜晶体管的源极连接。
可选地，阵列基板还可以包括位于栅极层111下方的另一透明导电薄膜层，该透明导电薄膜层和栅极层111绝缘设置，该透明导电薄膜层的作用是形成公共(COM)电极。
图11是本公开实施例提供的一种阵列基板的外围区域的膜层示意图，该外围区域膜层示意图对应图8中A-A处的剖面。参见图11，在外围区域，阵列基板包括依次层叠设置的衬底基板100、栅极层111、栅极绝缘层112、源漏极层114、绝缘保护层115和像素电极层116。
其中，时钟线110位于栅极层111，时钟引线120位于源漏极层112，补偿电容极板140位于所述像素电极层116。
如图11所示，所述时钟引线120和所述时钟线110通过第三过孔131连接，所述补偿电容极板140和所述时钟引线120通过第一过孔123连接。
图12是本公开实施例提供的另一种阵列基板的外围区域的膜层示意图，该外围区域膜层示意图对应图8中A-A处的剖面。图12所示的结构与图11所示的结构不同之处在于，第三过孔131不是连接时钟引线120和时钟线110，而是连接补偿电容极板140和时钟线110。在该实现方式中，第一过孔123和第三过孔131可以在一次构图工艺中形成，相比于图11的结构制作流程更简单。
本公开实施例还提供了一种显示面板，该显示面板为液晶显示面板，如图2所示，该显示面板包括：阵列基板10和彩膜基板20，阵列基板10与彩膜基板20对盒设置。
其中，阵列基板10为如图4至12任一幅所示的阵列基板。
在本公开实施例中，所述彩膜基板20包括：金属遮光层210。所述补偿电容极板140、所述时钟引线120和所述时钟线110分别与所述金属遮光层210形成电容；所述补偿电容极板140与所述金属遮光层310形成的电容、所述补偿电容极板140所连的所述时钟引线120与所述金属遮光层310形成的电容之和在第一电容范围内，所述第一电容范围的上限和下限之差小于第二阈值。第二阈值的具体数值可以基于显示均一性要求决定，该第二阈值要能够保证显示面板的均一性。
在进行显示面板设计时，通常会按照各个补偿电容极板140与所述金属遮光层310形成的电容，和所连的所述时钟引线120与所述金属遮光层310形成的电容之和为设定值的方式设计，但由于制作精度等影响，实际制作的显示面板中，不能保证每个补偿电容极板140与所述金属遮光层310形成的电容，和所连的所述时钟引线120与所述金属遮光层310形成的电容之和都等于设定值，但需要保证都处在一个电容范围内，以满足显示面板的均一性。
由于在本公开实施例中，补偿电容极板140、时钟引线120、时钟线110位于不同层，所以在设计补偿电容极板140时，不能简单计算补偿电容极板140、时钟引线120、时钟线110的面积和，而是通过先计算补偿电容极板140需要补偿的电容，然后计算其面积。原因如下：已知电容公式C＝εS/d，ε为极板间介质的介电常数，S为极板交叠面积，d为极板间的距离。补偿电容极板140和时钟引线120、时钟线110不在同一层，所以补偿电容极板140和金属遮光层310 形成的电容的极板间的距离，与时钟引线120或时钟线110与金属遮光层310形成的电容不同，因此补偿电容极板140与金属遮光层310形成的电容大小，与同样面积的时钟引线120或时钟线110与金属遮光层310形成的电容大小不同。
在本公开实施例中，通过设置补偿电容极板来对各个移位寄存器单元对应的时钟引线形成的电容进行补偿，补偿电容的面积和所连的时钟引线的长度负相关，从而使得原本时钟引线形成的电容越小的移位寄存器单元，对应的补偿电容越大，从而保证各个移位寄存器单元对应的时钟引线与金属遮光层形成的电容和补偿电容极板与金属遮光层形成的电容之和相当，使得各个移位寄存器单元对应的时钟引线的负载匹配，从而保证了通过时钟线和时钟引线传输到各个移位寄存器单元的时钟信号的均一性，进而保证了显示面板的显示均一性，提高了显示面板的显示品质。
本公开实施例还提供了一种显示装置，所述显示装置包括上述任一项所述的显示面板。
在具体实施时，本公开实施例提供的显示装置可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
在本公开实施例中，通过设置补偿电容极板来对各个移位寄存器单元对应的时钟引线形成的电容进行补偿，补偿电容的面积和所连的时钟引线的长度负相关，从而使得原本时钟引线形成的电容越小的移位寄存器单元，对应的补偿电容越大，从而保证各个移位寄存器单元对应的时钟引线与金属遮光层形成的电容和补偿电容极板与金属遮光层形成的电容之和相当，使得各个移位寄存器单元对应的时钟引线的负载匹配，从而保证了通过时钟线和时钟引线传输到各个移位寄存器单元的时钟信号的均一性，进而保证了显示面板的显示均一性，提高了显示面板的显示品质。
以上所述仅为本公开的可选实施例，并不用以限制本公开，凡在本公开的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (16)

  1. 一种阵列基板，其特征在于，所述阵列基板包括：
    衬底基板(100)，具有显示区域(101)和围绕所述显示区域(101)的外围区域(102)；
    多根时钟线(110)，位于所述衬底基板(100)上且在所述外围区域(102)内，所述时钟线(110)沿第一方向延伸；
    多根时钟引线(120)，位于所述衬底基板(100)上且在所述外围区域(102)内，所述时钟引线(120)沿第二方向延伸，所述第一方向和所述第二方向交叉；
    多个移位寄存器单元(130)，位于所述衬底基板(100)上且在所述外围区域(102)内，所述移位寄存器单元(130)和所述时钟线(110)之间通过所述时钟引线(120)连接；
    补偿电容极板(140)，位于所述衬底基板(100)上且在所述外围区域(102)内，所述补偿电容极板(140)和所述时钟引线(120)连接，且所述补偿电容极板(140)与所述时钟引线(120)不同层，所述补偿电容极板(140)的面积和所连的所述时钟引线(120)的长度负相关。
  2. 根据权利要求1所述的阵列基板，其特征在于，所述时钟引线(120)包括第一时钟引线(1201)，所述第一时钟引线(1201)所连的所述补偿电容极板(140)的形状为长条形。
  3. 根据权利要求2所述的阵列基板，其特征在于，长条形的所述补偿电容极板(140)沿所述第一方向延伸。
  4. 根据权利要求3所述的阵列基板，其特征在于，相邻的两根所述第一时钟引线(1201)所连的两个所述补偿电容极板(140)的间距大于长条形的所述补偿电容极板(140)的宽度。
  5. 根据权利要求2所述的阵列基板，其特征在于，所述时钟引线(120)还包括第二时钟引线(1202)，所述第二时钟引线(1202)所连的所述补偿电容极板(140)包括沿所述第一方向依次相连的第一段(141)和第二段(142)，在所述第二方向上，所述第一段(141)和第二段(142)的宽度不同，所述第二时钟引线(1202)的长度小于所述第一时钟引线(1201)的长度。
  6. 根据权利要求1至5任一项所述的阵列基板，其特征在于，所述补偿电容极板(140)在所述衬底基板(100)上的正投影，位于所述补偿电容极板(140) 所连的所述时钟线(110)在所述衬底基板(100)上的正投影内。
  7. 根据权利要求1至5任一项所述的阵列基板，其特征在于，
    所述补偿电容极板(140)在所述衬底基板(100)上的正投影和其他的时钟引线(120)在所述衬底基板(100)上的正投影的最小间距大于第一阈值，所述其他的时钟引线(120)是不与所述补偿电容极板(140)相连的时钟引线(120)。
  8. 根据权利要求1至5任一项所述的阵列基板，其特征在于，
    多根所述时钟引线(120)沿所述第一方向排列并分为多个周期，每个所述周期内的所述时钟引线(120)按从短到长的顺序依次排布。
  9. 根据权利要求8所述的阵列基板，其特征在于，每个所述周期内最短的两根所述时钟引线(120)所连的所述补偿电容极板(140)包括沿所述第一方向依次相连的第一段(141)和第二段(142)，在所述第二方向上，所述第一段(141)和第二段(142)的宽度不同。
  10. 根据权利要求1至5任一项所述的阵列基板，其特征在于，每根所述时钟引线(120)分别通过多个第一过孔与所述补偿电容极板(140)连接。
  11. 根据权利要求1至5任一项所述的阵列基板，其特征在于，所述阵列基板还包括：
    像素电极(160)，位于所述衬底基板(100)上且在所述显示区域(101)内；
    所述补偿电容极板(140)与所述像素电极(160)同层。
  12. 根据权利要求1至5任一项所述的阵列基板，其特征在于，所述阵列基板还包括：
    其他信号线(150)，位于所述衬底基板(100)上且在所述外围区域(102)内，所述其他信号线(150)沿所述第一方向延伸，所述时钟线(110)位于所述其他信号线(150)和所述移位寄存器单元(130)之间。
  13. 根据权利要求1至5任一项所述的阵列基板，其特征在于，所述阵列基板还包括：
    叉指状的连接块(121)，所述时钟引线(120)的一端通过所述连接块(121)与所述补偿电容极板(140)连接；
    在所述第一方向上，所述连接块(121)的宽度大于所述时钟引线(120) 的宽度。
  14. 一种显示面板，其特征在于，所述显示面板包括：
    如权利要求1至13任一项所述的阵列基板(10)；
    彩膜基板(20)，与所述阵列基板(10)对盒设置。
  15. 根据权利要求14所述的显示面板，其特征在于，所述彩膜基板(20)，包括：金属遮光层(210)；
    所述补偿电容极板(140)、所述时钟引线(120)和所述时钟线(110)分别与所述金属遮光层(210)形成电容；
    所述补偿电容极板(140)与所述金属遮光层(310)形成的电容、所述补偿电容极板(140)所连的所述时钟引线(120)与所述金属遮光层(310)形成的电容之和在第一电容范围内，所述第一电容范围的上限和下限之差小于第二阈值。
  16. 一种显示装置，其特征在于，所述显示装置包括如权利要求14或15所述的显示面板。
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