WO2021260494A1 - 正孔注入層用複合材料、光デバイス、装置、モジュール、電子機器、及び、照明装置 - Google Patents

正孔注入層用複合材料、光デバイス、装置、モジュール、電子機器、及び、照明装置 Download PDF

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WO2021260494A1
WO2021260494A1 PCT/IB2021/055292 IB2021055292W WO2021260494A1 WO 2021260494 A1 WO2021260494 A1 WO 2021260494A1 IB 2021055292 W IB2021055292 W IB 2021055292W WO 2021260494 A1 WO2021260494 A1 WO 2021260494A1
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Prior art keywords
layer
organic compound
light emitting
light
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English (en)
French (fr)
Japanese (ja)
Inventor
渡部剛吉
植田藍莉
大澤信晴
瀬尾哲史
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to CN202180045205.XA priority Critical patent/CN116018898A/zh
Priority to JP2022531101A priority patent/JPWO2021260494A1/ja
Priority to US18/008,626 priority patent/US20230225149A1/en
Priority to KR1020227045113A priority patent/KR20230028298A/ko
Publication of WO2021260494A1 publication Critical patent/WO2021260494A1/ja
Anticipated expiration legal-status Critical
Priority to JP2026003361A priority patent/JP2026063071A/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers

Definitions

  • organic EL devices also referred to as organic EL devices and organic EL elements
  • EL organic electroluminescence
  • the basic configuration of an organic EL device is such that a layer containing a luminescent organic compound (hereinafter, also referred to as a light emitting layer) is sandwiched between a pair of electrodes. By applying a voltage to this organic EL device, light emission from a luminescent organic compound can be obtained.
  • a luminescent organic compound hereinafter, also referred to as a light emitting layer
  • Non-Patent Document 1 discloses an organic EL device having a layer having a low refractive index.
  • One of the problems of one aspect of the present invention is to provide a novel composite material that can be used for a light emitting device, a light receiving device, a light receiving / receiving device, and the like.
  • One of the problems of one aspect of the present invention is to provide a composite material having a low refractive index, which can be used for a light emitting device, a light receiving device, a light receiving / receiving device, and the like.
  • One of the problems of one aspect of the present invention is to provide a composite material having high heat resistance that can be used for a light emitting device, a light receiving device, a light receiving / receiving device, and the like.
  • One aspect of the present invention is to provide a novel composite material for a hole injection layer, a composite material for a hole transport layer, or a composite material for a charge generation layer.
  • One aspect of the present invention is to provide a composite material for a hole injection layer, a composite material for a hole transport layer, or a composite material for a charge generation layer having a low refractive index.
  • One aspect of the present invention provides a composite material for a hole injection layer, a composite material for a hole transport layer, or a composite material for a charge generation layer, which contains an organic compound having high heat resistance and has a low refractive index. That is one of the issues.
  • One aspect of the present invention is to provide a light emitting device or a light receiving / receiving device having high luminous efficiency.
  • One aspect of the present invention is to provide a light emitting device or a light receiving / receiving device having high light extraction efficiency.
  • One aspect of the present invention is to provide a light emitting device, a light receiving device, or a light receiving / receiving device having high heat resistance.
  • One aspect of the present invention is to provide a light emitting device, a light receiving device, or a light receiving / receiving device having a long life.
  • One aspect of the present invention is to provide a light emitting device, a light receiving device, or a light receiving / receiving device having low power consumption.
  • One aspect of the present invention comprises a first organic compound and a second organic compound, and the ratio of the number of carbon atoms of the first organic compound forming a bond in the sp3 mixed orbital to the total number of carbon atoms. Is 23% or more and 55% or less, and the second organic compound is a composite material containing fluorine.
  • the refractive index of the layer made of the first organic compound in light having a wavelength of 633 nm is preferably 1.45 or more and 1.70 or less.
  • One aspect of the present invention comprises a first organic compound and a second organic compound, the glass transition temperature of the first organic compound is 90 ° C. or higher, and a layer composed of the first organic compound.
  • the refractive index of light having a wavelength of 633 nm is 1.45 or more and 1.70 or less, and the second organic compound is a composite material containing fluorine.
  • the first organic compound is preferably an amine compound, more preferably a monoamine compound.
  • One aspect of the present invention comprises a first organic compound and a second organic compound, wherein the first organic compound is a monoamine compound, and light having a wavelength of 633 nm in a layer composed of the first organic compound.
  • the refractive index in the above is 1.45 or more and 1.70 or less
  • the second organic compound is a composite material containing fluorine.
  • the molecular weight of the first organic compound is preferably 650 or more and 1200 or less.
  • the first organic compound is preferably a triarylmonoamine compound.
  • the integrated value of the signal of less than 4 ppm is preferably larger than the integrated value of the signal of 4 ppm or more.
  • the first organic compound preferably has at least one hydrocarbon group having 1 or more and 12 or less carbon atoms.
  • the first organic compound preferably has at least one of an alkyl group having 3 or more and 8 or less carbon atoms and a cycloalkyl group having 6 or more and 12 or less carbon atoms.
  • the second organic compound preferably contains a cyano group.
  • the LUMO level of the second organic compound is preferably ⁇ 5.0 eV or less.
  • the second organic compound preferably exhibits electron acceptability with respect to the first organic compound.
  • One aspect of the present invention is an optical device having a composite material having any of the above configurations.
  • the optical device include a light emitting device, a light receiving device, a light receiving device, and the like.
  • the composite material of one aspect of the present invention can be used for a hole injection layer, a hole transport layer, a charge generation layer, or the like.
  • One aspect of the present invention comprises an anode, a cathode, and a first layer, the first layer comprising a first organic compound and a second organic compound, the first.
  • the ratio of the number of carbon atoms forming a bond in the sp3 mixed orbital to the total number of carbon atoms of the organic compound is 23% or more and 55% or less
  • the second organic compound is an optical device containing fluorine.
  • the refractive index of the layer made of the first organic compound in light having a wavelength of 633 nm is preferably 1.45 or more and 1.70 or less.
  • One aspect of the present invention comprises an anode, a cathode, and a first layer, the first layer comprising a first organic compound and a second organic compound, the first.
  • the glass transition temperature of the organic compound is 90 ° C. or higher
  • the refractive index of the layer made of the first organic compound in light having a wavelength of 633 nm is 1.45 or higher and 1.70 or lower
  • the second organic compound is It is an optical device containing fluorine.
  • One aspect of the present invention comprises an anode, a cathode, and a first layer, the first layer comprising a first organic compound and a second organic compound, the first.
  • the organic compound is a monoamine compound, and the refractive index of the layer made of the first organic compound in light having a wavelength of 633 nm is 1.45 or more and 1.70 or less, and the second organic compound contains fluorine. It is a device.
  • the optical device of any of the above configurations further comprises a second layer, the second layer located between the first layer and the cathode, and the second layer being the first organic compound. It is preferable to have.
  • the second layer is preferably in contact with the first layer.
  • the first layer is preferably in contact with the anode.
  • the optical device having any of the above configurations further includes a first light emitting layer and a second light emitting layer, and the first layer is a first light emitting layer and a second light emitting layer. It is preferably located in between.
  • One aspect of the present invention is an apparatus having an optical device having any of the above configurations, and at least one of a transistor and a substrate.
  • One aspect of the invention is a module comprising the device described above and at least one of a connector and an integrated circuit (IC).
  • the connector include a flexible printed circuit board (Flexible Printed Circuit, hereinafter referred to as FPC), TCP (Tape Carrier Package), and the like.
  • the IC can be mounted on the device by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like.
  • the module of one aspect of the present invention may have only one of a connector and an IC, or may have both.
  • One aspect of the present invention is an electronic device comprising the above-mentioned device and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.
  • One aspect of the present invention includes an optical device having any of the above configurations and at least one of a housing, a cover, and a support, and the optical device is a lighting device which is a light emitting device.
  • a novel composite material that can be used for a light emitting device, a light receiving device, a light receiving / receiving device, and the like.
  • a composite material having a low refractive index that can be used for a light emitting device, a light receiving device, a light receiving / receiving device and the like.
  • a composite material having high heat resistance that can be used for a light emitting device, a light receiving device, a light receiving / receiving device and the like.
  • a novel composite material for a hole transport layer, a composite material for a hole injection layer, or a composite material for a charge generation layer can be provided.
  • a light emitting device or a light emitting / receiving device having high luminous efficiency According to one aspect of the present invention, it is possible to provide a light emitting device or a light emitting / receiving device having high light extraction efficiency. According to one aspect of the present invention, it is possible to provide a light emitting device, a light receiving device, or a light receiving / receiving device having high heat resistance. According to one aspect of the present invention, it is possible to provide a light emitting device, a light receiving device, or a light receiving / receiving device having a long life. According to one aspect of the present invention, it is possible to provide a light emitting device, a light receiving device, or a light receiving / receiving device having low power consumption.
  • FIG. 1A to 1D are cross-sectional views showing an example of a light emitting device.
  • FIG. 2A is a top view showing an example of a light emitting device.
  • 2B and 2C are cross-sectional views showing an example of a light emitting device.
  • 3A and 3C are cross-sectional views showing an example of a light emitting device.
  • FIG. 3B is a cross-sectional view showing an example of a light emitting device.
  • 4A and 4B are cross-sectional views showing an example of a light emitting device.
  • FIG. 5A is a top view showing an example of a light emitting device.
  • FIG. 5B is a cross-sectional view showing an example of a light emitting device.
  • 5C and 5D are cross-sectional views showing an example of a transistor.
  • 6A and 6B are cross-sectional views showing an example of a light receiving device.
  • 6C and 6D are views showing an example of a light receiving / receiving device.
  • 7A to 7C are views showing an example of a display device.
  • 8A to 8D are views showing an example of an electronic device.
  • 9A-9F are views showing an example of an electronic device.
  • 10A to 10C are views showing an example of an automobile.
  • 11A to 11E are diagrams showing an example of an electronic device.
  • FIG. 12 is a cross-sectional view showing the light emitting device of the embodiment.
  • FIG. 13 is a diagram showing the measurement results of the refractive indexes of dcPAF and PCBBiF.
  • FIG. 14 is a diagram showing the luminance-current density characteristics of the light emitting device of the first embodiment.
  • FIG. 15 is a diagram showing the current efficiency-luminance characteristics of the light emitting device of the first embodiment.
  • FIG. 16 is a diagram showing the current-voltage characteristics of the light emitting device of the first embodiment.
  • FIG. 17 is a diagram showing the external quantum efficiency-luminance characteristics of the light emitting device of the first embodiment.
  • FIG. 18 is a diagram showing an emission spectrum of the emission device of Example 1.
  • FIG. 19 is a diagram showing the results of a reliability test of the light emitting device of Example 1.
  • FIG. 20 is a diagram showing the measurement results of the refractive indexes of mmtBumTPchPAF and PCBBiF.
  • FIG. 20 is a diagram showing the measurement results of the refractive indexes of mmtBumTPchPAF and PCBBiF.
  • FIG. 21 is a diagram showing the luminance-current density characteristics of the light emitting device of the second embodiment.
  • FIG. 22 is a diagram showing the current efficiency-luminance characteristics of the light emitting device of the second embodiment.
  • FIG. 23 is a diagram showing the current-voltage characteristics of the light emitting device of the second embodiment.
  • FIG. 24 is a diagram showing the external quantum efficiency-luminance characteristics of the light emitting device of the second embodiment.
  • FIG. 25 is a diagram showing an emission spectrum of the emission device of Example 2.
  • FIG. 26 is a diagram showing the results of a reliability test of the light emitting device of Example 2.
  • membrane and the word “layer” can be interchanged with each other in some cases or depending on the situation.
  • conductive layer can be changed to the term “conductive layer”.
  • insulating film can be changed to the term “insulating layer”.
  • the composite material of one aspect of the present invention can be used for a hole injection layer, a hole transport layer, a charge generation layer, and the like in a light emitting device such as an organic EL device.
  • the composite material of one aspect of the present invention can be used as a carrier transporting material (hole transporting material) in a light receiving device such as an organic photodiode, a light receiving / receiving device having both light emitting and light receiving functions, and the like.
  • a composite material containing a hole transporting material and a material having electron acceptability for the hole transporting material is used, respectively. Can be done. In order for these layers to have hole-injecting or charge-generating functions, it is necessary that interactions occur between the materials constituting the composite material to form a charge transfer complex.
  • the composite material contains a large amount of a material having electron acceptability, light absorption in the visible region may occur, and the luminous efficiency of the organic EL device may decrease. Therefore, it is preferable that the composite material contains more hole-transporting materials than the material having electron acceptability.
  • the composite material of one aspect of the present invention a configuration in which a material having electron acceptability is added in a small amount to the hole transporting material can be applied.
  • the external quantum efficiency can be increased by lowering the refractive index of the material used for the organic EL device, it is desirable that the refractive index of the composite material is low.
  • the refractive index of the composite material can be lowered.
  • a substituent having a low atomic refraction In order to obtain a material having a low refractive index, it is preferable to introduce a substituent having a low atomic refraction into the molecule.
  • the substituent include a chain-type saturated hydrocarbon group and a cyclic-type saturated hydrocarbon group.
  • these substituents interfere with the interaction with electron-accepting materials. Therefore, in the hole transporting material, it is difficult to achieve both the ease of interaction with the material having electron acceptability and the low refractive index.
  • these substituents also hinder the development of carrier transportability. Therefore, it can be said that it is difficult to achieve both high carrier transportability of the layer containing the composite material and low refractive index.
  • the glass transition temperature (Tg) of the material used for the organic EL device is high.
  • Tg glass transition temperature
  • an unsaturated hydrocarbon group particularly a cyclic unsaturated hydrocarbon group
  • the refractive index of the material becomes high.
  • a skeleton having a saturated bond is introduced in order to increase the molecular weight, the interaction with the material having electron acceptability is further suppressed.
  • TAPC 1,1-bis- (4-bis (4-methyl-phenyl) -amino-phenyl) cyclohexane
  • TAPC is a substance that has a perfect balance between carrier transportability and low refractive index.
  • TAPC since two bulky substituents are inserted on one carbon of cyclohexane, the steric repulsion becomes large and the molecule itself becomes large. It is disadvantageous in terms of reliability because it induces instability.
  • TAPC has a low glass transition temperature of 85 ° C. due to the fact that its skeleton is composed of cyclohexane and a simple benzene ring, and has a problem in heat resistance.
  • the glass transition temperature is further improved while having the ease of interaction with the electron-accepting material, the high carrier transporting property, and the low refractive index. It is not easy to improve the heat resistance and the reliability at the time of driving.
  • the present inventors have found an organic compound in which the glass transition temperature is high and the proportion of carbon forming a bond in the sp3 hybrid orbital is within a certain range. Further, they have found that the composite material having such an organic compound is useful as a composite material for a hole injection layer, a composite material for a hole transport layer, and a composite material for a charge generation layer.
  • one embodiment of the present invention has a first organic compound and a second organic compound, and forms a bond in the sp3 mixed orbital of the first organic compound with respect to the total carbon number.
  • the ratio of the number of carbon atoms is 23% or more and 55% or less, and the second organic compound is a composite material containing fluorine.
  • one embodiment of the present invention comprises a first organic compound and a second organic compound, and the glass transition temperature of the first organic compound is 90 ° C. or higher, from the first organic compound.
  • the layer has a refractive index of 1.45 or more and 1.70 or less in light having a wavelength of 633 nm, and the second organic compound is a composite material containing fluorine.
  • one aspect of the present invention comprises a first organic compound and a second organic compound, wherein the first organic compound is a monoamine compound and the wavelength of the layer composed of the first organic compound is 633 nm.
  • the refractive index of the above light is 1.45 or more and 1.70 or less, and the second organic compound is a composite material containing fluorine.
  • composite materials can be used as a composite material for a hole transport layer, a composite material for a hole injection layer, a composite material for a charge generation layer, and the like.
  • the ratio of the number of carbon atoms forming the bond in the sp3 hybrid orbital to the total number of carbon atoms of the first organic compound is preferably 23% or more and 55% or less.
  • the substituent composed of carbon forming a bond in the sp3 hybrid orbital is a so-called chain-type saturated hydrocarbon group or a ring-type saturated hydrocarbon group, and therefore has low atomic refraction. Therefore, the refractive index of the first organic compound can be lowered, and the refractive index of the composite material can also be lowered.
  • the glass transition temperature of the first organic compound is preferably 90 ° C. or higher, more preferably 95 ° C. or higher, more preferably 100 ° C. or higher, further preferably 110 ° C. or higher, still more preferably 120 ° C. or higher.
  • the first organic compound can maintain a high glass transition temperature and can be a material having high heat resistance.
  • saturated hydrocarbon groups especially open-chain saturated hydrocarbon groups, tends to lower the glass transition temperature and melting point of the compound compared to the corresponding aromatic or heteroaromatic group (eg, having the same number of carbon atoms). There is.
  • the glass transition temperature decreases, the heat resistance of the organic EL material may decrease. Since it is desirable that various devices using organic EL materials exhibit stable physical properties under various environments in human life, it is preferable that the materials exhibiting the same characteristics have a high glass transition temperature.
  • the refractive index of the layer made of the first organic compound in light having a wavelength of 633 nm is preferably 1.45 or more and 1.70 or less. 633 nm is a wavelength usually used for measuring the refractive index. Further, the refractive index in the wavelength (455 nm or more and 465 nm or less) of the blue light emitting region of the layer made of the first organic compound is preferably 1.50 or more and 1.75 or less. If the material is anisotropy, the refractive index for normal light and the refractive index for abnormal light may differ. In this case, by performing anisotropy analysis, it is possible to calculate the refractive index of each of the normal light refractive index and the abnormal light refractive index separately. In this specification, when both the normal light refractive index and the abnormal light refractive index are present in the measured material, the normal light refractive index is used as an index.
  • the refractive index of the layer made of the first organic compound As the refractive index of the layer made of the first organic compound, the refractive index at the peak wavelength of the light emitted by the light emitting device in which the first organic compound is used or the emission peak wavelength of the light emitting substance contained in the light emitting device is used. It may be used to evaluate the first organic compound. Also in this case, the refractive index of the layer made of the first organic compound is preferably 1.50 or more and 1.75 or less, or 1.45 or more and 1.70 or less.
  • the peak wavelength of the light emitted by the light emitting device is the peak wavelength of the light before passing through the structure. Further, the emission peak wavelength of the luminescent substance is calculated from the PL spectrum in the solution state.
  • the relative permittivity of the organic compound constituting the EL layer of the light emitting device is about 3
  • the relative permittivity of the solvent for putting the light emitting center substance into a solution state is set in order to avoid a discrepancy with the light emitting spectrum of the light emitting device. , 1 or more and 10 or less, more preferably 2 or more and 5 or less at room temperature.
  • Specific examples of the solution include hexane, benzene, toluene, diethyl ether, ethyl acetate, chloroform, chlorobenzene, and dichloromethane.
  • a general-purpose solvent having a relative permittivity of 2 or more and 5 or less at room temperature and having high solubility is more preferable, and for example, toluene or chloroform is preferably used as the solution.
  • the first organic compound is preferably an amine compound, more preferably a monoamine compound, and even more preferably a triaryl monoamine compound.
  • the first organic compound is an amine compound because it is easy to control the highest occupied orbital (HOMO) level to a desired height depending on the substitution position of the alkyl group.
  • HOMO highest occupied orbital
  • the first organic compound preferably has an alkyl group bonded to the same plane as or in the vicinity of the plane forming HOMO. That is, it is preferable to arrange the alkyl group at a position where the HOMO is not shielded.
  • the plane forming the HOMO includes a plane of an aromatic ring to which nitrogen is bonded.
  • the alkyl group is preferably a tert-butyl group or a cyclohexyl group.
  • the first organic compound preferably has an alkyl group that functions as an electron donating group at a bond position that further destabilizes the energy of HOMO.
  • an alkyl group at the para position of the nitrogen atom of triphenylamine. This makes it possible to raise (shallow) the HOMO level of the first organic compound.
  • the first organic compound preferably has a skeleton having a high carrier transport property, and the aromatic amine skeleton is a preferable skeleton having a high hole transport property.
  • the diamine structure may adversely affect reliability depending on the substituents arranged around the TAPC as described above.
  • the monoamine compound is a material having the same good reliability as a conventional hole transporting material having a normal refractive index.
  • better characteristics can be obtained by devising one or both of the number of substituents and the substitution position of the substituent (alkyl group, cycloalkyl group, etc.) having carbon forming a bond in the sp3 hybrid orbital of the monoamine compound.
  • the stability of the molecule can be improved by limiting the number of aromatic groups bonded to saturated hydrocarbon groups and reducing the steric repulsion. From this, it is possible to obtain an optical device having a good life.
  • the molecular weight of the first organic compound is preferably 650 or more and 1200 or less. This makes it possible to increase the heat resistance of the first organic compound.
  • the integrated value of the signal of less than 4 ppm is preferably larger than the integrated value of the signal of 4 ppm or more.
  • Signals less than 4 ppm reflect hydrogen in chain or cyclic saturated hydrocarbon groups, which is greater than the integral of signals above 4 ppm means that the number of hydrogen atoms that make up the saturated hydrocarbon groups is unsaturated. It means that there are more hydrogen atoms that make up hydrocarbons. From this, the ratio of sp3 carbon in the molecule can be estimated.
  • the carbon of the unsaturated hydrocarbon group has fewer bonds that can be bonded to hydrogen, and when compared with benzene and cyclohexane, for example, there is a difference between C 6 H 6 and C 6 H 12.
  • the integral value of the signal of less than 4 ppm in the result of measurement by 1 H-NMR is larger than the integral value of the signal of 4 ppm or more, that is, among the carbons constituting the molecule. It shows that about one-third of the carbon atoms participating in the saturated hydrocarbon group are present.
  • the first organic compound becomes an organic compound having a low refractive index, and can be suitably used as a hole transporting material and a composite material.
  • the first organic compound has a first aromatic group, a second aromatic group, and a third aromatic group, and has a first aromatic group, a second aromatic group, and a second aromatic group.
  • Examples thereof include monoamine compounds in which the third aromatic group is directly bonded to the same nitrogen atom.
  • the monoamine compound has at least one fluorene skeleton because it has good hole transportability. Therefore, it is preferable that any one or more of the above-mentioned first aromatic group, second aromatic group, and third aromatic group is a fluorene skeleton. Further, the fact that the fluorene skeleton is directly bonded to the nitrogen atom of the amine contributes to raising the HOMO level of the molecule and facilitates the transfer of holes.
  • the first aromatic group and the second aromatic group each independently have 1 or more and 3 or less benzene rings. Moreover, it is preferable that both the first aromatic group and the second aromatic group are hydrocarbon groups. That is, it is preferable that the first aromatic group and the second aromatic group are a phenyl group, a biphenyl group, a terphenyl group, or a naphthylphenyl group, respectively. It is preferable that the first aromatic group or the second aromatic group is a terphenyl group because the glass transition temperature is improved and the heat resistance is improved.
  • first aromatic group and the second aromatic group each have 2 or 3 benzene rings
  • the 2 or 3 benzene rings are bonded to each other.
  • one or both of the first aromatic group and the second aromatic group are substituents in which two or three benzene rings are bonded to each other, that is, a biphenyl group or a terphenyl group, the glass transition temperature. It is preferable that the first aromatic group and the second aromatic group are independently biphenyl groups or terphenyl groups, respectively.
  • first aromatic group and the second aromatic group have one or more hydrocarbon groups having 1 or more and 12 or less carbon atoms in which carbon forms a bond only in the sp3 hybrid orbital. Is preferable.
  • hydrocarbon group an alkyl group having 3 or more and 8 or less carbon atoms and a cycloalkyl group having 6 or more and 12 or less carbon atoms are preferable.
  • the total amount of carbon contained in the above-mentioned hydrocarbon group bonded to the first aromatic group or the second aromatic group is 6 or more. Moreover, the total amount of carbon contained in all the above-mentioned hydrocarbon groups bonded to the first aromatic group and the second aromatic group is 8 or more, preferably 12 or more.
  • the total amount of carbon contained in all the above-mentioned hydrocarbon groups bonded to the first aromatic group and the second aromatic group is preferably 36 or less, preferably 30 or less, in order to maintain good carrier transportability. More preferred.
  • the third aromatic group is a substituted or unsubstituted monocycle, or a substituted or unsubstituted fused ring of 3 or less. As the number of fused rings increases, the refractive index tends to increase. Further, as the number of fused rings increases, absorption and emission of light in the visible region can be observed. Therefore, by setting the number of fused rings to 3 or less, it is possible to use a material that keeps the refractive index low and has a small influence of absorption and light emission.
  • the third aromatic group preferably has 6 or more and 13 or less carbon atoms forming a ring in order to maintain a low refractive index.
  • the third aromatic group examples include a benzene ring, a naphthalene ring, a fluorene ring, and an acenaphthylene ring.
  • the third aromatic group preferably contains a fluorene ring, and more preferably a fluorene ring.
  • an organic compound represented by the general formula (G1) to the general formula (G4) can be used as the first organic compound.
  • the organic compound represented by the general formula (G1) to the general formula (G4) can be said to be an example of a monoamine compound and an example of a triarylmonoamine compound.
  • Ar 1 and Ar 2 each independently represent a substituted or unsubstituted benzene ring, or a substituent in which two or three substituted or unsubstituted benzene rings are bonded to each other. ..
  • Ar 1 and Ar 2 are a hydrocarbon group having 1 to 12 carbon atoms atoms form a bond only sp3 hybrid orbital has one or more, in Ar 1 and Ar 2
  • the total amount of carbon contained in all the bonded hydrocarbon groups is 8 or more, and the total amount of carbon contained in all the hydrocarbon groups bonded to either Ar 1 or Ar 2 is 6 or more.
  • R 1 to R 3 independently represent an alkyl group having 1 or more and 4 or less carbon atoms, and u represents an integer of 0 or more and 4 or less.
  • R 1 and R 2 may be bonded to each other to form a ring.
  • Ar 1 and Ar 2 include substituted or unsubstituted phenyl group, biphenyl group, terphenyl group, naphthylphenyl group and the like.
  • an alkyl group having 3 to 8 carbon atoms and a cycloalkyl group having 6 to 12 carbon atoms are preferable. .. Specifically, propyl group, isopropyl group, butyl group, sec-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, sec-pentyl group, tert-pentyl group, neopentyl group, hexyl group, isohexyl.
  • linear alkyl groups having 1 or 2 carbon atoms When a plurality of linear alkyl groups having 1 or 2 carbon atoms are bonded to Ar 1 or Ar 2 as hydrocarbon groups, the linear alkyl groups may be bonded to each other to form a ring.
  • n, m, p, and r independently represent 1 or 2, and s, t, and u each independently represent an integer of 0 or more and 4 or less. Further, n + p and m + r are independently 2 or 3, respectively.
  • R 1 to R 3 independently represent an alkyl group having 1 or more and 4 or less carbon atoms
  • R 4 and R 5 each independently represent hydrogen or a hydrocarbon group having 1 or more and 3 or less carbon atoms.
  • R 10 to R 14 and R 20 to R 24 respectively, independently represent a hydrocarbon group having 1 or more and 12 or less carbon atoms in which hydrogen or carbon forms a bond only in the sp3 hybrid orbital.
  • R 10 to R 14 and R 20 to R 24 are 8 or more, and the sum of carbon atoms contained in either the R 10 to R 14 or R 20 to R 24 is 6 That is all.
  • R 1 and R 2 may be bonded to each other to form a ring, and in R 4 , R 5 , R 10 to R 14 , and R 20 to R 24 , adjacent groups are bonded to each other to form a ring. It may be formed.
  • n and p each independently represent 1 or 2, and s and u each independently represent an integer of 0 or more and 4 or less. Further, n + p is 2 or 3.
  • R 1 to R 3 independently represent an alkyl group having 1 or more and 4 or less carbon atoms
  • R 4 represents hydrogen or a hydrocarbon group having 1 or more and 3 or less carbon atoms
  • R 10 to R 14 and R 20 to R 24 each independently represent a hydrocarbon group having 1 or more and 12 or less carbon atoms in which hydrogen or carbon forms a bond only in the sp3 hybrid orbital.
  • R 10 to R 14 and R 20 to R 24 are 8 or more, and the sum of carbon atoms contained in either the R 10 to R 14 or R 20 to R 24 is 6 That is all.
  • R 1 and R 2 may be bonded to each other to form a ring, and in R 4 , R 10 to R 14 and R 20 to R 24 , adjacent groups are bonded to each other to form a ring. You may be doing it.
  • examples of the hydrocarbon group having 1 or more and 3 or less carbon atoms include a methyl group, an ethyl group, and a propyl group.
  • examples of the hydrocarbon group having 1 or more and 4 or less carbon atoms include a butyl group in addition to the above.
  • s, t, and u are independently 0. Further, when s is an integer of 2 or more and 4 or less, the plurality of R 4s may be the same or different, and when t is an integer of 2 or more and 4 or less, the plurality of R 5s are the same. However, when u is an integer of 2 or more and 4 or less, the plurality of R 3s may be the same or different.
  • u represents an integer of 0 or more and 4 or less
  • R 1 to R 3 independently represent an alkyl group having 1 or more and 4 or less carbon atoms, and R 10 to R 14 and R 20 respectively.
  • R 24 each independently represent a hydrocarbon group having 1 or more and 12 or less carbon atoms in which hydrogen or carbon forms a bond only in the sp3 hybrid orbital.
  • the sum of carbon atoms contained in R 10 to R 14 and R 20 to R 24 is 8 or more, and the sum of carbon atoms contained in either the R 10 to R 14 or R 20 to R 24 is 6 That is all.
  • R 1 and R 2 may be bonded to each other to form a ring, and in R 10 to R 14 and R 20 to R 24 , adjacent groups are bonded to each other to form a ring. May be good.
  • u is preferably 0. Further, when u is an integer of 2 or more and 4 or less, the plurality of R 3s may be the same or different.
  • R 10 to R 14 and R 20 to R 24 are independently any of hydrogen, tert-butyl group, and cyclohexyl group, the refractive index is determined. It is preferable because it can be lowered. Further, it is preferable that at least three of R 10 to R 14 and at least three of R 20 to R 24 are hydrogen because the carrier transport property is not easily impaired.
  • an arylamine compound having at least one aromatic group, the aromatic group having a first to third benzene ring and at least three alkyl groups is used. Can be mentioned. It is assumed that the first to third benzene rings are bonded in this order, and the first benzene ring is directly bonded to the nitrogen atom of the amine.
  • the first benzene ring may further have a substituted or unsubstituted phenyl group, and preferably has an unsubstituted phenyl group. Further, the second benzene ring or the third benzene ring may have a phenyl group substituted with an alkyl group.
  • first to third benzene rings two or more benzene rings, preferably the carbons at the 1st and 3rd positions of all the benzene rings, are not directly bonded to hydrogen, and the above-mentioned first benzene ring is not directly bonded. It is assumed that it is bonded to any of the third benzene ring, the phenyl group substituted with the above-mentioned alkyl group, the above-mentioned at least three alkyl groups, and the above-mentioned amine nitrogen atom.
  • the arylamine compound further has a second aromatic group.
  • the second aromatic group is preferably an unsubstituted monocycle or a group having a substituted or unsubstituted 3 or less fused ring, and more particularly a substituted or unsubstituted 3 or less fused ring.
  • the fused ring is more preferably a group having a fused ring having 6 or more and 13 or less carbons forming the ring, and further preferably a group having a fluorene ring.
  • the dimethylfluorenyl group is preferable as the second aromatic group.
  • the arylamine compound preferably further has a third aromatic group.
  • the third aromatic group has 1 or more and 3 or less substituted or unsubstituted benzene rings, respectively.
  • the above-mentioned alkyl group substituted with at least three alkyl groups and phenyl groups is preferably a chain alkyl group having 2 or more and 5 or less carbon atoms, and a chain alkyl group having a branch having 3 or more and 5 or less carbon atoms is more preferable. Preferred, t-butyl groups are even more preferred.
  • an organic compound represented by the general formula (G11) to the general formula (G13) can be used as the first organic compound.
  • the organic compound represented by the general formula (G11) to the general formula (G13) can be said to be an example of a monoamine compound and an example of a triarylmonoamine compound.
  • Ar 101 represents a substituted or unsubstituted benzene ring, or a substituent in which two or three substituted or unsubstituted benzene rings are bonded to each other
  • R 106 to R 108 are Each independently represents an alkyl group having 1 or more and 4 or less carbon atoms
  • v represents an integer of 0 or more and 4 or less
  • one of R 111 to R 115 represents a substituent represented by the general formula (g1).
  • Others independently represent hydrogen, an alkyl group having 1 or more and 6 or less carbon atoms, and any one of a substituted or unsubstituted phenyl group.
  • the number of substituted or unsubstituted phenyl groups in R 111 to R 115 is 1 or less. Moreover, it is preferable that the phenyl group is unsubstituted.
  • the substituent is an alkyl group having 1 or more carbon atoms and 6 or less carbon atoms.
  • Ar 101 include substituted or unsubstituted phenyl group, biphenyl group, terphenyl group, naphthylphenyl group and the like.
  • the plurality of R 108s may be the same or different.
  • one of R 121 to R 125 represents a substituent represented by the general formula (g2), and the other is independently hydrogen and an alkyl group having 1 or more and 6 or less carbon atoms.
  • R 131 to R 135 each independently contain any one of hydrogen, an alkyl group having 1 or more and 6 or less carbon atoms, and a phenyl group substituted with an alkyl group having 1 or more and 6 or less carbon atoms. show.
  • R 111 to R 115 , R 121 to R 125 , and R 131 to R 135 at least three or more are alkyl groups having 1 or more and 6 or less carbon atoms.
  • the organic compound represented by the above general formula (G11) can be made into an arylamine compound having a low refractive index.
  • the number of phenyl groups substituted with an alkyl group having 1 or more and 6 or less carbon atoms in R 121 to R 125 and R 131 to R 136 is one or less, that is, carbon in R 121 to R 125 and R 131 to R 135. It is assumed that the phenyl group substituted with an alkyl group having a number of 1 or more and 6 or less is 1 or 0.
  • R 112 and R 114 In addition, in at least two combinations of the three combinations of R 112 and R 114 , R 122 and R 124 , and R 132 and R 134 , it is assumed that at least one R is other than hydrogen. That is, among the benzene rings having R 112 and R 114 , the benzene rings having R 122 and R 124, and the benzene rings having R 132 and R 134 , in two or more benzene rings, the carbon at the meta position of each has carbon. At least one of them is not hydrogen, that is, it has a substituent. At this time, it is preferable that at least one of R 112 , R 114 , R 122 , and R 124 is other than hydrogen, and at least one of R 132 and R 134 is other than hydrogen.
  • alkyl group having 1 or more and 4 or less carbon atoms examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group and the like, and a tert-butyl group is particularly preferable. ..
  • an alkyl group having 1 or more and 6 or less carbon atoms and a cycloalkyl group having 5 or more and 12 or less carbon atoms can be used as the substituent.
  • the alkyl group having 1 to 6 carbon atoms is preferably a chain alkyl group having 2 or more carbon atoms from the viewpoint of lowering the refractive index, and a chain alkyl group having 5 or less carbon atoms is preferable from the viewpoint of ensuring carrier transportability. .. Further, the effect of reducing the refractive index is remarkable in the chain alkyl group having a branch having 3 or more carbon atoms. That is, the alkyl group having 1 or more and 6 or less carbon atoms is preferably a chain-type alkyl group having 2 or more and 5 or less carbon atoms, and more preferably a chain-type alkyl group having a branch having 3 or more and 5 or less carbon atoms.
  • alkyl group having 1 or more and 6 or less carbon atoms examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, and a hexyl group.
  • the tert-butyl group is particularly preferred.
  • Examples of the cycloalkyl group having 5 or more and 12 or less carbon atoms include a cyclohexyl group, a 4-methylcyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclononyl group, a cyclodecyl group, a decahydronaphthyl group, a cycloundecyl group, and a cyclododecyl group.
  • a cycloalkyl group having 6 or more carbon atoms is preferable for lowering the refractive index, and a cyclohexyl group and a cyclododecyl group are particularly preferable.
  • the general formula (G12) is an example in the general formula (G11) in which Ar 101 is a substituent in which two or three substituted or unsubstituted benzene rings are bonded to each other. Therefore, the description of the part similar to the general formula (G11) may be omitted.
  • R 106 to R 109 each independently represent an alkyl group having 1 or more and 4 or less carbon atoms
  • v and w each independently represent an integer of 0 or more and 4 or less
  • x and y independently represents 1 or 2
  • x + y is 2 or 3. Both x and y are preferably 1.
  • R 141 to R 145 independently represent hydrogen, an alkyl group having 1 or more and 6 or less carbon atoms, and a cycloalkyl group having 5 or more and 12 or more carbon atoms.
  • the plurality of R 108s may be the same or different.
  • the plurality of R 109s may be the same or different.
  • the types of substituents of the two phenylene groups, the number of substituents, and the positions of the binding hands may be the same or different.
  • the types of substituents of the two phenyl groups and the number of substituents may be the same or different.
  • the general formula (G13) is an example in the general formula (G11) in which Ar 101 is a single substituted or unsubstituted benzene ring. Therefore, the description of the part similar to the general formula (G11) may be omitted.
  • R 101 to R 105 are independently hydrogen, an alkyl group having 1 or more and 6 or less carbon atoms, a cycloalkyl group having 6 or more and 12 or less carbon atoms, and a substituted or unsubstituted phenyl group. Represents any one of.
  • R 101 to R 105 it is preferable that R 103 is a cyclohexyl group and the rest are all hydrogen. Further, among R 101 to R 105, is R 101 is an unsubstituted phenyl group, if it is the rest are all hydrogen, since a hole transporting property is improved, which is preferable.
  • organic compound that can be used as the first organic compound include N, N-bis (4-cyclohexylphenyl) -9,9-dimethyl-9H-fluoren-2-amine (abbreviation: dchPAF). , N-[(3', 5'-ditersary butyl) -1,1'-biphenyl-4-yl] -N- (4-cyclohexylphenyl) -9,9-dimethyl-9H-fluoren-2-amine (Abbreviation: mmtBuBichPAF), N- (3,3'', 5,5''-tetra-t-butyl-1,1': 3', 1''-terphenyl-5'-yl) -N- (4-Cyclohexylphenyl) -9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPchPAF), N-[(3,3', 5'-t-buty
  • the second organic compound contains fluorine.
  • the second organic compound is particularly preferably containing a cyano group.
  • the second organic compound preferably exhibits electron acceptability with respect to the first organic compound.
  • the lowest unoccupied molecular orbital (LUMO) level of the second organic compound is preferably ⁇ 5.0 eV or less.
  • the mass percent concentration of the second organic compound in the composite material of one aspect of the present invention is preferably 10 wt% or less, more preferably 5 wt% or less.
  • the volume percent concentration of the second organic compound in the composite material of one aspect of the present invention is preferably 10 vol% or less, more preferably 5 vol% or less, still more preferably 3 vol% or less.
  • the second organic compound specifically, 7,7,8,8-(abbreviation: F 4 -TCNQ), 1,3,4 , 5,7,8-Hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), and 2- (7-dicyanomethylene-1,3,4,5,6,8,9,10- Octafluoro-7H-pyrene-2-iriden) malononitrile and the like can be mentioned.
  • the [3] radialene derivative having an electron-withdrawing group is preferable because it has very high electron acceptability, and specifically, ⁇ , ⁇ ', ⁇ '.
  • the composite material of the present embodiment has a strong interaction between the first organic compound and the second organic compound, has a low refractive index, and has high heat resistance. Therefore, the light extraction efficiency of the light emitting device can be improved. In addition, an optical device having good current-voltage characteristics can be obtained. In addition, the reliability of the optical device can be improved.
  • ⁇ Basic structure of light emitting device ⁇ 1A to 1D show an example of a light emitting device having an EL layer between a pair of electrodes.
  • the light emitting device shown in FIG. 1A has a structure (single structure) in which the EL layer 103 is sandwiched between the first electrode 101 and the second electrode 102.
  • the EL layer 103 has at least a light emitting layer.
  • the EL layer 103 further includes one or more of various layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier block layer, an exciton block layer, and a charge generation layer. Can have a layer of.
  • FIG. 1B shows an example of the laminated structure of the EL layer 103.
  • the EL layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially laminated on the first electrode 101.
  • the hole injection layer 111, the hole transport layer 112, the light emitting layer 113, the electron transport layer 114, and the electron injection layer 115 may each have a single layer structure or a laminated structure.
  • the stacking order is reversed.
  • the light emitting device may have a plurality of EL layers between the pair of electrodes.
  • the light emitting device has an EL layer of n layers (n is an integer of 2 or more), and has a charge generation layer 104 between the EL layer of the (n-1) th layer and the EL layer of the nth layer. Is preferable.
  • FIG. 1C shows a light emitting device having a tandem structure having two EL layers (EL layers 103a and 103b) between a pair of electrodes. Further, FIG. 1D shows a light emitting device having a tandem structure having three EL layers (EL layers 103a, 103b, 103c).
  • Each of the EL layers 103a, 103b, and 103c has at least a light emitting layer. Even when a plurality of EL layers are provided as in the tandem structure shown in FIGS. 1C and 1D, the same laminated structure as the EL layer 103 shown in FIG. 1B can be applied to each EL layer.
  • the EL layers 103a, 103b, and 103c can have one or more layers of the hole injection layer 111, the hole transport layer 112, the electron transport layer 114, and the electron injection layer 115, respectively.
  • the charge generation layer 104 transmits visible light or near-infrared light from the viewpoint of light extraction efficiency (specifically, the transmittance of the visible light or near-infrared light of the charge generation layer 104 is 40. % Or more) is preferable. Further, the charge generation layer 104 functions even if the conductivity is lower than that of one or both of the first electrode 101 and the second electrode 102.
  • the EL layers are provided in contact with each other and the same configuration as that of the charge generation layer 104 is formed between the two, the EL layers can be provided in contact with each other without the charge generation layer. For example, when a charge generation region is formed on one surface of the EL layer, the EL layer can be provided in contact with the surface.
  • the tandem structure light emitting device has higher current efficiency than the single structure device, and requires less current to illuminate with the same brightness. Therefore, the life of the light emitting device is long, and the reliability of the light emitting device and the electronic device can be improved.
  • the light emitting layer 113 has a light emitting substance and a plurality of substances in an appropriate combination, and can be configured to obtain fluorescent light emission or phosphorescent light emission having a desired wavelength. Further, the light emitting layer 113 may have a laminated structure having different emission wavelengths. In this case, different materials may be used for the luminescent substance and other substances used for each of the laminated light emitting layers. Further, the EL layers 103a, 103b, 103c shown in FIGS. 1C and 1D may be configured to emit light having different wavelengths from each other. In this case as well, the luminescent substance and other substances used for each light emitting layer can be made of different materials. For example, in FIG.
  • the EL layer 103a by configuring the EL layer 103a to emit red and green light and configuring the EL layer 103b to emit blue light, it is possible to obtain a light emitting device that emits white light as a whole.
  • one light emitting device may have a plurality of light emitting layers or EL layers exhibiting the same color.
  • the EL layer 103a is configured to emit the first blue light
  • the EL layer 103b is configured to emit yellow, yellow-green, or green light and red light
  • the EL layer 103c is the second.
  • the light emitted from the EL layer may be resonated between the pair of electrodes to enhance the obtained light emission.
  • the EL layer is formed by forming a micro-optical resonator (microcavity) structure by using the first electrode 101 as a reflective electrode and the second electrode 102 as a semi-transmissive / semi-reflective electrode.
  • the light emission obtained from 103 can be enhanced.
  • the microcavity structure By applying the microcavity structure to the light emitting device, it is possible to extract light having a different wavelength (monochromatic light) even if it has the same EL layer. Therefore, it is not necessary to form a different functional layer for each pixel (so-called separate painting) in order to obtain different emission colors. Therefore, it is easy to realize high definition. It can also be combined with a colored layer (color filter). Further, since it is possible to enhance the emission intensity in the front direction of a specific wavelength, it is possible to reduce the power consumption.
  • the first electrode 101 of the light emitting device has a laminated structure of a conductive film having a reflectivity for visible light or near-infrared light and a conductive film having a light-transmitting property for visible light or near-infrared light.
  • optical adjustment can be performed by controlling the film thickness of the light-transmitting conductive film.
  • the distance between the first electrode 101 and the second electrode 102 is close to m ⁇ / 2 (where m is a natural number) with respect to the wavelength ⁇ of the light obtained from the light emitting layer 113. It is preferable to adjust as such.
  • the light emitting region referred to here means a recombination region of holes and electrons in the light emitting layer 113.
  • the spectrum of the light obtained from the light emitting layer 113 can be narrowed, and light emission with good color purity can be obtained.
  • the optical distance between the first electrode 101 and the second electrode 102 is, strictly speaking, the total thickness from the reflection region of the first electrode 101 to the reflection region of the second electrode 102. can.
  • the optical distance between the first electrode 101 and the light emitting layer from which the desired light can be obtained is, strictly speaking, the optical path between the reflection region in the first electrode 101 and the light emitting region in the light emitting layer where the desired light can be obtained. It can be said that it is a distance.
  • At least one of the first electrode 101 and the second electrode 102 is an electrode having transparency to visible light or near-infrared light.
  • the transmittance of visible light or near-infrared light of the electrode having transparency to visible light or near-infrared light shall be 40% or more.
  • the electrode having transparency to visible light or near-infrared light is the semi-transmissive / semi-reflecting electrode
  • the reflectance of visible light or near-infrared light of the electrode is 20% or more and 80%.
  • it is preferably 40% or more and 70% or less.
  • the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the first electrode 101 or the second electrode 102 is an electrode (reflecting electrode) having reflectivity to visible light or near-infrared light
  • the reflectance of visible light or near-infrared light of the reflecting electrode is , 40% or more and 100% or less, preferably 70% or more and 100% or less.
  • the resistivity of this electrode is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • Electrode> As the material for forming the first electrode 101 and the second electrode 102, the following materials can be appropriately combined and used as long as the functions of both electrodes described above can be satisfied.
  • metals, alloys, electrically conductive compounds, and mixtures thereof can be appropriately used. Specific examples thereof include In—Sn oxide (also referred to as ITO), In—Si—Sn oxide (also referred to as ITSO), In—Zn oxide, and In—W—Zn oxide.
  • Indium (In), Tin (Sn), Molybdenum (Mo), Tantal (Ta), Tungsten (W), Palladium (Pd), Gold (Au), Platinum (Pt), Silver (Ag), Ittrium (Y) ), Metals such as neodym (Nd), and alloys containing them in appropriate combinations (such as an alloy of silver, palladium, and copper (Ag-Pd-Cu (APC)) can also be used.
  • the first electrode 101 is formed as a reflective electrode
  • the second electrode 102 is formed as a semi-transmissive / semi-reflective electrode. Therefore, a single or a plurality of desired conductive materials can be used to form a single layer or laminated.
  • the second electrode 102 is formed by selecting a material in the same manner as described above. Further, a sputtering method or a vacuum vapor deposition method can be used for producing these electrodes.
  • the hole injection layer 111 is a layer for injecting holes into the EL layer 103 from the first electrode 101, which is an anode, and is a layer containing a material having high hole injection properties.
  • a composite material containing a hole transporting material and an acceptor material can be used as the material having high hole injectability.
  • electrons are extracted from the hole transporting material by the acceptor material, holes are generated in the hole injection layer 111, and holes are injected into the light emitting layer 113 via the hole transport layer 112.
  • the hole injection layer 111 may be formed of a single layer made of a composite material containing a hole transporting material and an acceptor material, and the hole transporting material and the acceptor material may be formed of separate layers. It may be formed by laminating.
  • the hole injection layer 111 it is preferable to use the composite material of one aspect of the present invention described in the first embodiment.
  • phthalocyanine-based compound such as phthalocyanine (abbreviation: CuPc)
  • Materials with high hole injectability include poly (N-vinylcarbazole) (abbreviation: PVK), poly (4-vinyltriphenylamine) (abbreviation: PVTPA), and poly [N- (4- ⁇ N'-[ 4- (4-Diphenylamino) phenyl] phenyl-N'-phenylamino ⁇ phenyl) methacrylicamide] (abbreviation: PTPDMA), poly [N, N'-bis (4-butylphenyl) -N, N'-bis (Phenyl) benzidine] (abbreviation: Poly-TPD) and the like can be used.
  • PVK poly (N-vinylcarbazole)
  • PVTPA poly (4-vinyltriphenylamine)
  • PTPDMA poly [N- (4- ⁇ N'-[ 4- (4-Diphenylamino) phenyl] phenyl-N'-phenylamino ⁇ phenyl)
  • a polymer compound to which an acid such as poly (3,4-ethylenedioxythiophene) / poly (styrene sulfonic acid) (abbreviation: PEDOT / PSS) or polyaniline / poly (styrene sulfonic acid) (Pani / PSS) is added. Etc. can also be used.
  • the hole transporting material used for the hole injection layer 111 may have at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton.
  • the hole transporting material is an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic in which a 9-fluorenyl group is bonded to a nitrogen atom of the amine via an arylene group. It may be a group monoamine.
  • Examples of the hole transporting material include N- (4-biphenyl) -6, N-diphenylbenzo [b] naphtho [1,2-d] furan-8-amine (abbreviation: BnfABP), N, N-. Bis (4-biphenyl) -6-phenylbenzo [b] naphtho [1,2-d] furan-8-amine (abbreviation: BBABnf), 4,4'-bis (6-phenylbenzo [b] naphtho [1] , 2-d] furan-8-yl) -4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N, N-bis (4-biphenyl) benzo [b] naphtho [1,2-d] furan- 6-Amine (abbreviation: BBABnf (6)), N, N-bis (4-biphenyl) benzo [b] naphtho [1,2-d] furan-8-amine (abbreviation:
  • Acceptor materials that can be used for the hole injection layer 111 include chloranil and 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene ( Abbreviation: HAT-CN) and the like can be mentioned.
  • an oxide of a metal belonging to Group 4 to Group 8 in the Periodic Table of the Elements can also be used.
  • Specific examples thereof include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide.
  • molybdenum oxide is particularly preferable because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle.
  • organic acceptors such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used.
  • the hole transport layer 112 is a layer that transports holes injected from the first electrode 101 to the light emitting layer 113 by the hole injection layer 111, and is a layer containing a hole transporting material.
  • the hole-transporting material used for the hole-transporting layer 112 preferably has a HOMO level that is the same as or close to the HOMO level of the hole-injecting layer 111.
  • the hole-transporting material used for the hole-transporting layer 112 a substance having a hole mobility of 10-6 cm 2 / Vs or more is preferable. It should be noted that any substance other than these can be used as long as it is a substance having a higher hole transport property than electrons.
  • the layer on the light emitting layer 113 side has a function as an electron block layer.
  • the hole transport layer 112 it is preferable to use the first organic compound (hole transport material) that can be used for the composite material of one aspect of the present invention described in the first embodiment.
  • the thickness of the layer having a low refractive index in the light emitting device is increased (the ratio occupied by the layer having a low refractive index). Can be increased), and the light extraction efficiency can be improved.
  • the refractive index step can be reduced and the light extraction efficiency can be improved.
  • hole transport layer 112 a hole transport material that can be used for the hole injection layer 111 can be used.
  • a ⁇ -electron-rich heteroaromatic compound for example, a carbazole derivative, a thiophene derivative, a furan derivative
  • an aromatic amine a compound having an aromatic amine skeleton
  • Examples of the carbazole derivative (compound having a carbazole skeleton) include a carbazole derivative (for example, a 3,3'-bicarbazole derivative), an aromatic amine having a carbazolyl group, and the like.
  • bicarbazole derivative for example, 3,3'-bicarbazole derivative
  • PCCP 3,3'-bis (9-phenyl-9H-carbazole)
  • 9,9'-bis. (1,1'-biphenyl-4-yl) -3,3'-bi-9H-carbazole
  • 9,9'-bis (1,1'-biphenyl-3-yl) -3,3'-bi- 9H-carbazole
  • 9- (2-naphthyl) -9'-phenyl-9H, 9'H-3,3'-bicarbazole abbreviation: ⁇ NCCP
  • aromatic amine having a carbazolyl group examples include N- (4-biphenyl) -N- (9,9-dimethyl-9H-fluoren-2-yl) -9-phenyl-9H-carbazole-3. -Amine (abbreviation: PCBiF), 4-phenyldiphenyl- (9-phenyl-9H-carbazole-3-yl) amine (abbreviation: PCA1BP), N, N'-bis (9-phenylcarbazole-3-yl)- N, N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N, N', N''-triphenyl-N, N', N''-tris (9-phenylcarbazole-3-yl) ) Benzene-1,3,5-triamine (abbreviation: PCA3B), 9,9-dimethyl-N-phenyl-N- [4- (9-phenyl-9-
  • carbazole derivative examples include 3- [4- (9-phenanthryl) -phenyl] -9-phenyl-9H-carbazole (abbreviation: PCPPn) and 3- [4- (1-naphthyl) -phenyl] in addition to the above.
  • PCPN 1,3-bis (N-carbazolyl) benzene
  • mCP 1,3-bis (N-carbazolyl) benzene
  • CBP 4,4'-di (N-carbazolyl) biphenyl
  • CzTP 3,3,5-diphenylphenyl) -9-Phenylcarbazole
  • TCPB 1,3,5-tris [4- (N-carbazolyl) phenyl] benzene
  • CzPA 9 -[4- (10-Phenyl-9-anthrasenyl) phenyl] -9H-carbazole
  • thiophene derivative compound having a thiophene skeleton
  • furan derivative compound having a furan skeleton
  • aromatic amine examples include 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB or ⁇ -NPD) and N, N'-bis (3).
  • polymer compounds such as PVK, PVTPA, PTPDMA, and Poly-TPD can also be used.
  • the hole transporting material is not limited to the above, and various known materials can be used for the hole injection layer 111 and the hole transport layer 112 in combination of one or a plurality of known materials.
  • the HOMO level of the hole transporting material used for the hole transporting layer 112 is a value equal to or lower than the HOMO level of the hole transporting material used for the hole injecting layer 111. Is preferable.
  • the difference between the HOMO level of the hole transporting material used for the hole transporting layer 112 and the HOMO level of the hole transporting material used for the hole injecting layer 111 is preferably within 0.2 eV. It is more preferable that the hole-transporting material used for the hole-injecting layer 111 and the hole-transporting material used for the hole-transporting layer 112 are the same, because hole injection becomes smooth.
  • the HOMO level of the hole transport material used for the layer formed on the light emitting layer 113 side is the hole transport used for the layer formed on the hole injection layer 111 side. It is preferably lower (deeper) than the HOMO level of the sex material. Further, the difference between the HOMO levels of the two hole transporting materials is preferably within 0.2 eV.
  • the hole transport material used for the layer formed on the light emitting layer 113 side preferably has a hole transport skeleton.
  • a hole transporting skeleton a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton, in which the HOMO level of the hole transporting material does not become too high, are preferable.
  • the light emitting layer 113 is a layer containing a light emitting substance.
  • the light emitting layer 113 can have one kind or a plurality of kinds of light emitting substances.
  • a substance exhibiting a luminescent color such as blue, purple, bluish purple, green, yellowish green, yellow, orange, and red is appropriately used.
  • a substance that emits near-infrared light can also be used.
  • by using different light emitting substances for a plurality of light emitting layers it is possible to obtain a structure exhibiting different light emitting colors (for example, white light emission obtained by combining light emitting colors having a complementary color relationship). Further, one light emitting layer may have different light emitting substances.
  • the light emitting layer 113 preferably has one or more kinds of organic compounds (host material, assist material, etc.) in addition to the light emitting substance (guest material).
  • organic compounds host material, assist material, etc.
  • guest material As one or more kinds of organic compounds, one or both of the hole transporting material and the electron transporting material described in this embodiment can be used. Further, a bipolar material may be used as one or more kinds of organic compounds.
  • the luminescent material that can be used for the light emitting layer 113 is not particularly limited, and is a luminescent material that converts single-term excitation energy into light emission in the visible light region or near-infrared light region, or triple-term excitation energy in the visible light region or near-red.
  • a luminescent substance that changes light emission in the external light region can be used.
  • Examples of the luminescent substance that converts the single-term excitation energy into light emission include a substance that emits fluorescence (fluorescent material), and examples thereof include pyrene derivative, anthracene derivative, triphenylene derivative, fluorene derivative, carbazole derivative, dibenzothiophene derivative, dibenzofuran derivative, and dibenzo.
  • Examples thereof include quinoxalin derivatives, quinoxalin derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives and the like.
  • the pyrene derivative is preferable because it has a high emission quantum yield.
  • pyrene derivative examples include N, N'-bis (3-methylphenyl) -N, N'-bis [3- (9-phenyl-9H-fluoren-9-yl) phenyl] pyrene-1,6. -Diamine (abbreviation: 1,6 mMFLPAPrun), N, N'-diphenyl-N, N'-bis [4- (9-phenyl-9H-fluoren-9-yl) phenyl] pyrene-1,6-diamine (abbreviation) : 1,6FLPAPrn), N, N'-bis (dibenzofuran-2-yl) -N, N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N, N'-bis (dibenzothiophene) -2-yl) -N, N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6Thh
  • Examples of the light emitting substance that converts triplet excitation energy into light emission include a substance that emits phosphorescence (phosphorescent material) and a thermally activated delayed fluorescent (TADF) material that exhibits thermal activated delayed fluorescence. Can be mentioned.
  • the phosphorescent material examples include an organic metal complex, a metal complex (platinum complex), and a rare earth metal complex. Since these exhibit different emission colors (emission peaks) for each substance, they are appropriately selected and used as necessary.
  • Examples of the phosphorescent material having a blue or green color and a peak wavelength of the emission spectrum of 450 nm or more and 570 nm or less include the following substances.
  • Tris [3-methyl-1- (2-methylphenyl) -5-phenyl-1H-1,2,4-triazolat] iridium (III) (abbreviation: [Ir (Mptz1-mp) 3)
  • 1H-triazole such as Tris (1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolat) iridium (III) (abbreviation: [Ir (Prptz1-Me) 3]).
  • Examples of the phosphorescent material having a green or yellow color and a peak wavelength of 495 nm or more and 590 nm or less in the emission spectrum include the following substances.
  • Tris (4-methyl-6-phenylpyrimidinat) iridium (III) (abbreviation: [Ir (mppm) 3 ]), Tris (4-t-butyl-6-phenylpyrimidinat) iridium (III).
  • Iridium (III) (abbreviation: [Ir (mppr-Me) 2 (acac)]), (acetylacetonato) bis (5-isopropyl-3-methyl-2-phenylpyrazinato) iridium (III) (abbreviation: An organic metal iridium complex having a pyrazine skeleton such as [Ir (mppr-iPr) 2 (acac)]), Tris (2-phenylpyridinato-N, C 2' ) iridium (III) (abbreviation: [Ir (abbreviation: Ir (abbreviation) ppy) 3 ]), bis (2-phenylpyridinato-N, C 2' ) iridium (III) acetylacetonate (abbreviation: [Ir (ppy) 2 (acac)]), bis (benzo [h] quinolinato) ) Iridium (III) Acetylaceton
  • Examples of the phosphorescent material having a yellow or red color and a peak wavelength of 570 nm or more and 750 nm or less in the emission spectrum include the following substances.
  • the organic compound (host material, assist material, etc.) used for the light emitting layer 113 one or a plurality of substances having an energy gap larger than the energy gap of the light emitting substance can be selected and used.
  • the organic compound used in combination with the luminescent material has a large energy level in the singlet excited state and a small energy level in the triplet excited state. Is preferable.
  • the organic compounds that can be used in combination with the luminescent material include anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo [g, p] chrysene derivatives. Examples include fused polycyclic aromatic compounds.
  • organic compound (host material) used in combination with the fluorescent material examples include 9-phenyl-3- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: PCzPA), 3. 6-Diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: DPCzPA), PCPN, 9,10-diphenylanthracene (abbreviation: DPAnth), N, N-diphenyl- 9- [4- (10-phenyl-9-anthril) phenyl] -9H-carbazole-3-amine (abbreviation: CzA1PA), 4- (10-phenyl-9-anthril) triphenylamine (abbreviation: DPhPA), 4- (9H-carbazole-9-yl) -4'-(10-phenyl-9-anthril) triphenylamine (abbreviation
  • the organic compound used in combination with the luminescent material is an organic compound having a tripler excitation energy larger than the triplet excitation energy (energy difference between the ground state and the triplet excited state) of the luminescent material. Can be selected.
  • a plurality of organic compounds for example, a first host material and a second host material (or an assist material)
  • these multiple organic compounds are phosphorescent. It is preferable to use it by mixing it with a material (particularly an organic metal complex).
  • ExTET Extra-Triplet Energy Transfer
  • a compound that easily forms an excitation complex is preferable, and a compound that easily receives holes (hole transporting material) and a compound that easily receives electrons (electron transporting material) are combined. Is particularly preferred.
  • the hole transporting material and the electron transporting material the materials shown in the present embodiment can be used. With this configuration, high efficiency, low voltage drive, and long life of the light emitting device can be realized at the same time.
  • the organic compounds that can be used in combination with the luminescent material include aromatic amines, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, zinc-based metal complexes, aluminum-based metal complexes, and oxa.
  • aromatic amines include aromatic amines, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, zinc-based metal complexes, aluminum-based metal complexes, and oxa.
  • examples thereof include diazole derivatives, triazole derivatives, benzoimidazole derivatives, quinoxalin derivatives, dibenzoquinoxalin derivatives, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, and phenanthroline derivatives.
  • aromatic amines compounds having an aromatic amine skeleton
  • carbazole derivatives dibenzothiophene derivatives (thiophene derivatives)
  • dibenzofuran derivatives dibenzofuran derivatives (furan derivatives)
  • hole transporting material shown above.
  • zinc-based metal complex and the aluminum-based metal complex which are organic compounds having high electron transport properties, include tris (8-quinolinolato) aluminum (III) (abbreviation: Alq) and tris (4-methyl-8).
  • oxazoles such as bis [2- (2-benzothazolyl) phenolato] zinc (II) (abbreviation: ZnPBO) and bis [2- (2-benzothiazolyl) phenolato] zinc (II) (abbreviation: ZnBTZ)
  • ZnPBO bis [2- (2-benzothazolyl) phenolato] zinc
  • ZnBTZ bis [2- (2-benzothiazolyl) phenolato] zinc
  • oxadiazole derivative triazole derivative, benzoimidazole derivative, quinoxalin derivative, dibenzoquinoxalin derivative, and phenylanthrolin derivative, which are organic compounds having high electron transport properties, are 2- (4-biphenylyl) -5 (4-).
  • tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (p-tert-butylphenyl) -1,3,4-oxadiazole-2- Il] Benzene (abbreviation: OXD-7), 9- [4- (5-phenyl-1,3,4-oxadiazol-2-yl) phenyl] -9H-carbazole (abbreviation: CO11), 3- ( 4-Biphenylyl) -4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethyl) Phenyl) -5- (4-biphenylyl) -1,2,4-triazole (abbreviation: p-EtTAZ), 2,2', 2''-(1,3,5-benzene
  • heterocyclic compound having a diazine skeleton the heterocyclic compound having a triazine skeleton, and the heterocyclic compound having a pyridine skeleton, which are organic compounds having high electron transport properties, are 4,6-bis [3- (phenanthren-).
  • organic compounds having high electron transport properties examples include poly (2,5-pyridinediyl) (abbreviation: PPy) and poly [(9,9-dihexylfluorene-2,7-diyl) -co- (pyridine-3,5). -Diyl)] (abbreviation: PF-Py), poly [(9,9-dioctylfluorene-2,7-diyl) -co- (2,2'-bipyridine-6,6'-diyl)] (abbreviation: Polymer compounds such as PF-BPy) can also be used.
  • PPy poly (2,5-pyridinediyl)
  • PF-Py poly [(9,9-dihexylfluorene-2,7-diyl) -co- (pyridine-3,5).
  • PF-Py poly [(9,9-dioctylfluorene-2,7-di
  • TADF material is a material that can up-convert a triplet excited state to a singlet excited state (intersystem crossing) with a small amount of heat energy and efficiently exhibit light emission (fluorescence) from the singlet excited state.
  • the energy difference between the triplet excited level and the singlet excited level is 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less.
  • the delayed fluorescence in the TADF material refers to light emission having a spectrum similar to that of normal fluorescence but having an extremely long lifetime. Its life is 10-6 seconds or longer, preferably 10-3 seconds or longer.
  • the TADF material examples include fullerenes and derivatives thereof, acridine derivatives such as proflavine, and eosin.
  • metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd) and the like can be mentioned.
  • the metal-containing porphyrin include protoporphyrin-tin fluoride complex (abbreviation: SnF 2 (Proto IX)), mesoporphyrin-tin fluoride complex (abbreviation: SnF 2 (Meso IX)), and hematoporphyrin-tin fluoride.
  • Heterocyclic compounds having a ring can be used.
  • a substance in which a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring are directly bonded has a stronger donor property of the ⁇ -electron-rich heteroaromatic ring and a stronger acceptor property of the ⁇ -electron-deficient heteroaromatic ring.
  • TADF material When a TADF material is used, it can also be used in combination with other organic compounds. In particular, it can be combined with the above-mentioned host material, hole transport material, and electron transport material.
  • the above-mentioned material can be used for forming the light emitting layer 113 by combining with one or both of the low molecular weight material and the high molecular weight material. Further, a known method (evaporation method, coating method, printing method, etc.) can be appropriately used for film formation.
  • the electron transport layer 114 is a layer that transports electrons injected from the second electrode 102 to the light emitting layer 113 by the electron injection layer 115.
  • the electron transport layer 114 is a layer containing an electron transport material.
  • the electron transport material used for the electron transport layer 114 is preferably a substance having an electron mobility of 1 ⁇ 10 -6 cm 2 / Vs or more. In addition, any substance other than these can be used as long as it is a substance having a higher electron transport property than holes.
  • the electron transporting material examples include a metal complex having a quinoline skeleton, a metal complex having a benzoquinoline skeleton, a metal complex having an oxazole skeleton, a metal complex having a thiazole skeleton, and the like, as well as an oxadiazole derivative, a triazole derivative, and an imidazole derivative.
  • ⁇ electron deficiency including oxazole derivative, thiazole derivative, phenanthroline derivative, quinoline derivative having quinoline ligand, benzoquinoline derivative, quinoxalin derivative, dibenzoquinoxalin derivative, pyridine derivative, bipyridine derivative, pyrimidine derivative, and other nitrogen-containing heteroaromatic compounds.
  • a material having high electron transport property such as a type heteroaromatic compound can be used.
  • the material shown above can be used.
  • the electron transport layer 114 preferably contains an electron transportable material and an organic metal complex of an alkali metal or an alkaline earth metal.
  • the electron transporting material preferably has an anthracene skeleton, and more preferably has an anthracene skeleton and a heterocyclic skeleton.
  • a nitrogen-containing 5-membered ring skeleton is preferable.
  • the nitrogen-containing 5-membered ring skeleton it is particularly preferable to have a nitrogen-containing 5-membered ring skeleton containing two complex atoms in the ring, such as a pyrazole ring, an imidazole ring, an oxazole ring, and a thiazole ring.
  • organic metal complex of alkali metal or alkaline earth metal an organic complex of lithium is preferable, and 8-quinolinolato-lithium (abbreviation: Liq) is particularly preferable.
  • the amount of electrons injected into the light emitting layer 113 can be controlled, and the light emitting layer 113 can be prevented from becoming in a state of excess electrons. Then, by expanding the light emitting region in the light emitting layer 113 and dispersing the burden on the material constituting the light emitting layer 113, it is possible to provide a light emitting device having a long life and high luminous efficiency.
  • the electron transport layer 114 has a portion in which the mixing ratio of the electron transport material and the organic metal complex of an alkali metal or an alkaline earth metal is different in the thickness direction thereof.
  • the electron transport layer 114 may have a concentration gradient, and may have a laminated structure of a plurality of layers having different mixing ratios of the electron transport material and the organic metal complex of an alkali metal or an alkaline earth metal. good.
  • the magnitude of the mixing ratio can be inferred from the amount of atoms or molecules detected by time-of-flight secondary ion mass spectrometry (ToF-SIMS: Time-of-flight secondary ion mass spectrometry).
  • ToF-SIMS Time-of-flight secondary ion mass spectrometry
  • the magnitude of the value detected by ToF-SIMS analysis corresponds to the magnitude of the abundance of the atom or molecule of interest. Therefore, by comparing the detected amounts of the electron-transporting material and the organometallic complex, it is possible to estimate the magnitude of the mixing ratio.
  • the content of the organometallic complex in the electron transport layer 114 is preferably smaller on the second electrode 102 side than on the first electrode 101 side. That is, it is preferable that the electron transport layer 114 is formed so that the concentration of the organometallic complex increases from the second electrode 102 side toward the first electrode 101 side. That is, the electron transport layer 114 has a portion where the abundance of the electron transport material is smaller on the light emitting layer 113 side than the portion where the abundance of the electron transport material is larger, and in other words, the electron transport It can be said that the layer 114 has a portion having a large amount of the organic metal complex on the light emitting layer 113 side rather than a portion having a small amount of the organic metal complex.
  • the change in carrier balance in the light emitting device of one aspect of the present invention is caused by the change in electron mobility of the electron transport layer 114.
  • the electron transport layer 114 has a region having a high concentration of the organometallic complex between the region where the concentration of the organometallic complex is low and the light emitting layer 113. That is, it has a configuration in which the region where the concentration of the organometallic complex is low is located closer to the second electrode 102 than the region where the concentration is high. Since the electron mobility of the electron transport layer 114 increases as the concentration of the organic metal complex increases, the electron mobility of the electron transport layer 114 is rate-determined in the region where the concentration is low.
  • an organic metal complex of an alkali metal or an alkaline earth metal moves from the first electrode 101 side to the second electrode 102 side (from a dense region to a light region) by the voltage.
  • Spread Since the region where the concentration of the organometallic complex is high is closer to the first electrode 101 than the region where the concentration is low, the electron mobility of the electron transport layer 114 is improved with driving. As a result, the carrier balance changes inside the light emitting device, the recombination region moves, and a light emitting device having a long life can be obtained.
  • the light emitting device of one aspect of the present invention having the above configuration has a very long life.
  • the electron injection layer 115 is a layer containing a material having high electron injection properties.
  • the electron injection layer 115 includes alkali metals such as Liq, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), lithium oxide (LiO x ), and alkaline earth metals. Alternatively, those compounds can be used. In addition, rare earth metal compounds such as erbium fluoride (ErF 3) can be used. Further, an electride may be used for the electron injection layer 115. Examples of the electride include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. It should be noted that the substance constituting the electron transport layer 114 described above can also be used.
  • a composite material containing an electron transporting material and a donor material may be used for the electron injection layer 115.
  • a composite material is excellent in electron injecting property and electron transporting property because electrons are generated in an organic compound by an electron donor.
  • the organic compound is preferably a material excellent in transporting generated electrons, and specifically, for example, an electron transporting material (metal complex and a heteroaromatic) used for the electron transport layer 114 described above. Compounds, etc.) can be used.
  • the electron donor a substance exhibiting electron donating property with respect to the organic compound can be used.
  • alkali metals, alkaline earth metals, and rare earth metals are preferable, and examples thereof include lithium, cesium, magnesium, calcium, erbium, and ytterbium.
  • alkali metal oxides and alkaline earth metal oxides are preferable, and lithium oxides, calcium oxides, barium oxides and the like can be mentioned. It is also possible to use a Lewis base such as magnesium oxide. Further, an organic compound such as tetrathiafulvalene (abbreviation: TTF) can also be used.
  • TTF tetrathiafulvalene
  • the charge generation layer 104 injects electrons into the EL layer 103a when a voltage is applied between the first electrode 101 (anode) and the second electrode 102 (cathode). , Has a function of injecting holes into the EL layer 103b.
  • the charge generation layer 104 may be configured to include a hole transporting material and an acceptor material (electron acceptor material), or may be configured to include an electron transporting material and a donor material. By forming the charge generation layer 104 having such a configuration, it is possible to suppress an increase in the drive voltage when the EL layers are laminated.
  • charge generation layer 104 it is preferable to use the composite material of one aspect of the present invention described in the first embodiment.
  • the above-mentioned materials can be used as the hole transporting material, the acceptor material, the electron transporting material, and the donor material, respectively.
  • a vacuum process such as a vapor deposition method and a solution process such as a spin coating method and an inkjet method can be used.
  • a physical vapor deposition method PVD method
  • a sputtering method such as a sputtering method, an ion plating method, an ion beam vapor deposition method, a molecular beam vapor deposition method, a vacuum vapor deposition method, a chemical vapor deposition method (CVD method), etc.
  • CVD method chemical vapor deposition method
  • a vapor deposition method vacuum vapor deposition method, etc.
  • a coating method dip
  • Coating method die coating method, bar coating method, spin coating method, spray coating method, etc.
  • printing method inkprint method, screen (hole plate printing) method, offset (flat plate printing) method, flexo (letter plate printing) method, gravure method, It can be formed by a method such as microcontact method).
  • the materials of the functional layer and the charge generation layer constituting the EL layer 103 are not limited to the above-mentioned materials, respectively.
  • a high molecular compound oligoform, dendrimer, polymer, etc.
  • a medium molecular compound compound in the intermediate region between low molecular weight and high molecular weight: a molecular weight of 400 or more and 4000 or less
  • an inorganic compound quantum dot material, etc.
  • a colloidal quantum dot material an alloy type quantum dot material, a core / shell type quantum dot material, a core type quantum dot material, or the like can be used.
  • FIGS. 2A and 2C show a cross-sectional view between the alternate long and short dash lines X1-Y1 and X2-Y2 of FIG. 2A.
  • the light emitting device shown in FIGS. 2A to 2C can be used, for example, as a lighting device.
  • the light emitting device may be any of bottom emission, top emission, and dual emission.
  • the light emitting device shown in FIG. 2B includes a substrate 490a, a substrate 490b, a conductive layer 406, a conductive layer 416, an insulating layer 405, an organic EL device 450 (first electrode 401, EL layer 402, and second electrode 403), and It has an adhesive layer 407.
  • the organic EL device 450 can also be referred to as a light emitting element, an organic EL element, a light emitting device, or the like.
  • the EL layer 402 preferably has the composite material of one aspect of the present invention shown in the first embodiment. For example, it is preferable to have the composite material as at least one of the material of the hole injection layer, the material of the hole transport layer, and the material of the charge generation layer.
  • the organic EL device 450 has a first electrode 401 on the substrate 490a, an EL layer 402 on the first electrode 401, and a second electrode 403 on the EL layer 402.
  • the organic EL device 450 is sealed by the substrate 490a, the adhesive layer 407, and the substrate 490b.
  • the ends of the first electrode 401, the conductive layer 406, and the conductive layer 416 are each covered with the insulating layer 405.
  • the conductive layer 406 is electrically connected to the first electrode 401, and the conductive layer 416 is electrically connected to the second electrode 403.
  • the conductive layer 406 covered with the insulating layer 405 via the first electrode 401 functions as an auxiliary wiring and is electrically connected to the first electrode 401. It is preferable to have an auxiliary wiring electrically connected to the electrode of the organic EL device 450 because the voltage drop due to the resistance of the electrode can be suppressed.
  • the conductive layer 406 may be provided on the first electrode 401. Further, an auxiliary wiring electrically connected to the second electrode 403 may be provided on the insulating layer 405 or the like.
  • Glass, quartz, ceramic, sapphire, organic resin and the like can be used for the substrate 490a and the substrate 490b, respectively.
  • the flexibility of the display device can be increased.
  • a light extraction structure for improving the light extraction efficiency, an antistatic film for suppressing the adhesion of dust, a water-repellent film for preventing the adhesion of dirt, and a hard for suppressing the generation of scratches due to use.
  • One or more of the coat film, the shock absorbing layer, and the like may be arranged.
  • Examples of the insulating material that can be used for the insulating layer 405 include resins such as acrylic resin and epoxy resin, and inorganic insulation such as silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, and aluminum oxide. Materials are mentioned.
  • various curable adhesives such as a photocurable adhesive such as an ultraviolet curable type, a reaction curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used.
  • these adhesives include epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin and the like.
  • a material having low moisture permeability such as an epoxy resin is preferable.
  • a two-component mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • the light emitting device shown in FIG. 2C has a barrier layer 490c, a conductive layer 406, a conductive layer 416, an insulating layer 405, an organic EL device 450, an adhesive layer 407, a barrier layer 423, and a substrate 490b.
  • the barrier layer 490c shown in FIG. 2C has a substrate 420, an adhesive layer 422, and an insulating layer 424 having a high barrier property.
  • the organic EL device 450 is arranged between the insulating layer 424 having a high barrier property and the barrier layer 423. Therefore, even if a resin film having a relatively low waterproof property is used for the substrate 420 and the substrate 490b, it is possible to prevent impurities such as water from entering the organic EL device and shortening the life.
  • the substrate 420 and the substrate 490b are provided with polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethylmethacrylate resin, and polycarbonate (PC) resin, respectively.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PC polycarbonate
  • Polyether sulfone (PES) resin polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetra Fluoroethylene (PTFE) resin, ABS resin, cellulose nanofibers and the like can be used.
  • glass having a thickness sufficient to have flexibility may be used.
  • the insulating layer 424 having a high barrier property it is preferable to use an inorganic insulating film.
  • an inorganic insulating film for example, a silicon nitride film, a silicon nitride film, a silicon oxide film, a silicon nitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used. Further, a hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, neodymium oxide film and the like may be used. Further, two or more of the above-mentioned insulating films may be laminated and used.
  • the barrier layer 423 preferably has at least one inorganic film.
  • a single-layer structure of an inorganic film or a laminated structure of an inorganic film and an organic film can be applied to the barrier layer 423.
  • the inorganic film the above-mentioned inorganic insulating film is suitable.
  • the laminated structure include a structure in which a silicon nitride film, a silicon oxide film, an organic film, a silicon oxide film, and a silicon nitride film are formed in this order.
  • the highly barrier insulating layer 424 and the organic EL device 450 can be formed directly on the flexible substrate 420. In this case, the adhesive layer 422 is unnecessary. Further, the insulating layer 424 and the organic EL device 450 can be transferred to the substrate 420 after being formed on the hard substrate via the release layer. For example, the insulating layer 424 and the organic EL device 450 are peeled from the hard substrate by applying heat, force, laser light, or the like to the peeling layer, and then the substrate 420 is bonded to the peeling layer using the adhesive layer 422. May be transposed to.
  • the release layer for example, a laminated structure of an inorganic film including a tungsten film and a silicon oxide film, an organic resin film such as polyimide, or the like can be used.
  • the insulating layer 424 can be formed by applying a high temperature as compared with a resin substrate or the like, so that the insulating layer 424 can be made into a dense and extremely barrier insulating film.
  • FIG. 3A shows a cross-sectional view of the light emitting device.
  • the light emitting device shown in FIG. 3A is an active matrix type light emitting device in which a transistor and a light emitting device are electrically connected.
  • the light emitting device shown in FIG. 3A includes a substrate 201, a transistor 210, a light emitting device 203R, a light emitting device 203G, a light emitting device 203B, a color filter 206R, a color filter 206G, a color filter 206B, a substrate 205, and the like.
  • the transistor 210 is provided on the substrate 201, the insulating layer 202 is provided on the transistor 210, and the light emitting devices 203R, 203G, and 203B are provided on the insulating layer 202.
  • the transistor 210 and the light emitting devices 203R, 203G, and 203B are sealed in a space 207 surrounded by the substrate 201, the substrate 205, and the adhesive layer 208.
  • Space 207 can be, for example, a decompressed atmosphere, an inert atmosphere, or a resin-filled configuration.
  • the light emitting device shown in FIG. 3A has a configuration in which one pixel has a red sub-pixel (R), a green sub-pixel (G), and a blue sub-pixel (B).
  • the light emitting device of one aspect of the present invention has a plurality of pixels arranged in a matrix.
  • One pixel has one or more sub-pixels.
  • One sub-pixel has one light emitting device.
  • the pixel has a configuration having three sub-pixels (three colors of R, G, B, or three colors of yellow (Y), cyan (C), and magenta (M), etc.), or sub-pixels. (4 colors of R, G, B, white (W), 4 colors of R, G, B, Y, etc.) can be applied.
  • FIG. 3B shows a detailed configuration of the light emitting device 203R, the light emitting device 203G, and the light emitting device 203B.
  • the light emitting devices 203R, 203G, and 203B have a common EL layer 213, and also have a microcavity structure in which the optical distance between the electrodes of each light emitting device is adjusted according to the light emitting color of each light emitting device.
  • the EL layer 213 preferably has the composite material of one aspect of the present invention shown in the first embodiment. For example, it is preferable to have the composite material as at least one of the material of the hole injection layer, the material of the hole transport layer, and the material of the charge generation layer.
  • the first electrode 211 functions as a reflective electrode
  • the second electrode 215 functions as a transflective / semi-reflective electrode.
  • the light emitting device 203R is adjusted so that the optical distance between the first electrode 211 and the second electrode 215 is 220R so that the intensity of the red light is enhanced.
  • the light emitting device 203G is adjusted so that the optical distance between the first electrode 211 and the second electrode 215 is 220G so that the intensity of the green light is enhanced, and the light emitting device 203B is blue.
  • the optical distance between the first electrode 211 and the second electrode 215 is adjusted to be 220B so that the light intensity is enhanced.
  • the conductive layer 212R is formed on the first electrode 211
  • the conductive layer 212G is formed on the first electrode 211 to perform optical adjustment. Can be done.
  • a conductive layer having a thickness different from that of the conductive layer 212R and the conductive layer 212G may be formed on the first electrode 211 to adjust the optical distance 220B.
  • the ends of the first electrode 211, the conductive layer 212R, and the conductive layer 212G are covered with the insulating layer 204.
  • the light emitting device shown in FIG. 3A is a top emission type light emitting device in which light emitted from the light emitting device is emitted through a color filter of each color formed on the substrate 205.
  • the color filter can pass a specific wavelength range of visible light and block a specific wavelength range.
  • red sub-pixel (R) the light emitted from the light emitting device 203R is emitted through the red color filter 206R.
  • red light can be obtained from the light emitting device 203R by providing a color filter 206R that passes only the red wavelength region at a position overlapping the light emitting device 203R.
  • the light emitted from the light emitting device 203G is emitted through the green color filter 206G
  • the blue sub pixel (B) the light emitted from the light emitting device 203B is blue. It is ejected through the color filter 206B.
  • the substrate 205 may be provided with a black matrix 209 (which can also be said to be a black layer). At this time, it is preferable that the end portion of the color filter overlaps with the black matrix 209. Further, the color filter and the black matrix 209 of each color may be covered with an overcoat layer that transmits visible light.
  • the light emitting device shown in FIG. 3C has a configuration in which one pixel has a red sub-pixel (R), a green sub-pixel (G), a blue sub-pixel (B), and a white sub-pixel (W).
  • R red sub-pixel
  • G green sub-pixel
  • B blue sub-pixel
  • W white sub-pixel
  • the optical distance between the first electrode 211 and the second electrode 215 in the light emitting device 203W may be the same as or different from any of the light emitting devices 203R, 203G, and 203B.
  • the optical distance in the light emitting device 203W is set to the light emitting device 203B as shown in FIG. 3C. It is preferable that the optical distance is equal to 220B in. As a result, the light obtained from the light emitting device 203W can be brought close to the white light having a desired color temperature.
  • FIG. 3A shows an example in which a common EL layer 213 is used for the light emitting device of each color sub-pixel, but as shown in FIG. 4A, a different EL layer is used for the light emitting device of each color sub-pixel. You may. In FIG. 4A, the above-mentioned microcavity structure can be similarly applied.
  • FIG. 4A shows an example in which the light emitting device 203R has the EL layer 213R, the light emitting device 203G has the EL layer 213G, and the light emitting device 203B has the EL layer 213B.
  • the EL layers 213R, 213G, and 213B may have a common layer.
  • the EL layers 213R, 213G, and 213B have different light emitting layer configurations, and the other layers may be common layers.
  • the light emitted by the light emitting devices 203R, 203G, and 203B may be taken out through a color filter or may be taken out without passing through a color filter.
  • a light emitting device having a structure (bottom emission type) that extracts light to the substrate 201 side on which the transistor 210 is formed is also one of the present inventions. It is an aspect.
  • the transistor 210 is formed on the substrate 201
  • the insulating layer 202a is formed on the transistor 210
  • the color filters 206R, 206G, 206B are formed on the insulating layer 202a
  • the color filters 206R, 206G, 206B are formed on the color filters 206R, 206G, 206B.
  • An example of forming the insulating layer 202b and forming the light emitting devices 203R, 203G, 203B on the insulating layer 202b is shown.
  • a light-shielding substrate and a translucent substrate can be used as the substrate 201, and a translucent substrate can be used as the substrate 205.
  • a light-shielding substrate and a translucent substrate can be used as the substrate 205, and a translucent substrate can be used as the substrate 201.
  • the light emitting device of one aspect of the present invention can be a passive matrix type or an active matrix type.
  • An active matrix type light emitting device will be described with reference to FIG.
  • FIG. 5A shows a top view of the light emitting device.
  • FIG. 5B shows a cross-sectional view between the alternate long and short dash lines AA'shown in FIG. 5A.
  • the active matrix type light emitting device shown in FIGS. 5A and 5B has a pixel unit 302, a circuit unit 303, a circuit unit 304a, and a circuit unit 304b.
  • the circuit unit 303, the circuit unit 304a, and the circuit unit 304b can each function as a scanning line drive circuit (gate driver) or a signal line drive circuit (source driver). Alternatively, it may be a circuit that electrically connects the external gate driver or source driver and the pixel unit 302.
  • a routing wiring 307 is provided on the first substrate 301.
  • the routing wiring 307 is electrically connected to the FPC 308 which is an external input terminal.
  • the FPC 308 transmits an external signal (for example, a video signal, a clock signal, a start signal, a reset signal, etc.) and a potential to the circuit unit 303, the circuit unit 304a, and the circuit unit 304b.
  • a printed wiring board may be attached to the FPC 308.
  • the configuration shown in FIGS. 5A and 5B can also be said to be a light emitting module having a light emitting device (or light emitting device) and an FPC.
  • the pixel unit 302 has a plurality of pixels having an organic EL device 317, a transistor 311 and a transistor 312.
  • the transistor 312 is electrically connected to the first electrode 313 of the organic EL device 317.
  • the transistor 311 functions as a switching transistor.
  • the transistor 312 functions as a current control transistor.
  • the number of transistors included in each pixel is not particularly limited, and can be appropriately provided as needed.
  • the circuit unit 303 has a plurality of transistors including the transistor 309 and the transistor 310 and the like.
  • the circuit unit 303 may be formed of a circuit including a unipolar (either N-type or P-type) transistor, or may be formed of a CMOS circuit including an N-type transistor and a P-type transistor. good. Further, the configuration may have a drive circuit externally.
  • the structure of the transistor included in the light emitting device of the present embodiment is not particularly limited.
  • a planar type transistor, a stagger type transistor, an inverted stagger type transistor and the like can be used.
  • either a top gate type or a bottom gate type transistor structure may be used.
  • gates may be provided above and below the semiconductor layer on which the channel is formed.
  • the crystallinity of the semiconductor material used for the transistor is also not particularly limited, and is either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region). May be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.
  • the semiconductor layer of the transistor preferably has a metal oxide (also referred to as an oxide semiconductor).
  • the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon and crystalline silicon (low temperature polysilicon, single crystal silicon, etc.) and the like.
  • the semiconductor layers include, for example, indium and M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, berylium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, etc. It is preferred to have one or more selected from hafnium, tantalum, tungsten, and gallium) and zinc.
  • M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) also referred to as IGZO
  • IGZO oxide containing indium (In), gallium (Ga), and zinc (Zn)
  • the sputtering target used for forming the In-M-Zn oxide preferably has an In atom ratio of M or more.
  • the transistor included in the circuit unit 303, the circuit unit 304a, and the circuit unit 304b and the transistor included in the pixel unit 302 may have the same structure or different structures.
  • the structures of the plurality of transistors included in the circuit unit 303, the circuit unit 304a, and the circuit unit 304b may all have the same structure, or may have two or more types.
  • the structures of the plurality of transistors included in the pixel unit 302 may all be the same, or may have two or more types.
  • the end of the first electrode 313 is covered with an insulating layer 314.
  • the insulating layer 314 contains one or both of an organic compound such as a negative photosensitive resin and a positive photosensitive resin (acrylic resin), and an inorganic compound such as silicon oxide, silicon oxide nitride, and silicon nitride. Can be used. It is preferable that the upper end portion or the lower end portion of the insulating layer 314 has a curved surface having a curvature. Thereby, the covering property of the film formed on the upper layer of the insulating layer 314 can be improved.
  • An EL layer 315 is provided on the first electrode 313, and a second electrode 316 is provided on the EL layer 315.
  • the EL layer 315 has at least one of a light emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.
  • the EL layer 315 preferably has the composite material of one aspect of the present invention shown in the first embodiment. For example, it is preferable to have the composite material as at least one of the material of the hole injection layer, the material of the hole transport layer, and the material of the charge generation layer.
  • the plurality of transistors and the plurality of organic EL devices 317 are sealed by the first substrate 301, the second substrate 306, and the sealing material 305.
  • the space 318 surrounded by the first substrate 301, the second substrate 306, and the sealing material 305 may be filled with an inert gas (nitrogen, argon, etc.) or an organic substance (including the sealing material 305).
  • Epoxy resin, glass frit, or the like can be used for the sealing material 305.
  • the sealing material 305 it is preferable to use a material that does not allow moisture and oxygen to permeate as much as possible.
  • a glass frit it is preferable that the first substrate 301 and the second substrate 306 are glass substrates from the viewpoint of adhesiveness.
  • 5C and 5D show examples of transistors that can be used in the light emitting device.
  • the transistor 320 shown in FIG. 5C is composed of a conductive layer 321 that functions as a gate, an insulating layer 328 that functions as a gate insulating layer, a semiconductor layer 327 having a channel forming region 327i and a pair of low resistance regions 327n, and a pair of low resistance regions 327n.
  • the insulating layer 328 is located between the conductive layer 321 and the channel forming region 327i.
  • the insulating layer 325 is located between the conductive layer 323 and the channel forming region 327i.
  • the transistor 320 is preferably covered with an insulating layer 326.
  • the insulating layer 326 may be included in the constituent elements of the transistor 320.
  • the conductive layer 322a and the conductive layer 322b are each connected to the low resistance region 327n via an opening provided in the insulating layer 324.
  • the conductive layer 322a and the conductive layer 322b one functions as a source and the other functions as a drain.
  • the insulating layer 325 is provided so as to overlap with at least the channel forming region 327i of the semiconductor layer 327.
  • the insulating layer 325 may cover the upper surface and the side surface of the pair of low resistance regions 327n.
  • the transistor 330 shown in FIG. 5D functions as a conductive layer 331 that functions as a gate, an insulating layer 338 that functions as a gate insulating layer, a conductive layer 332a and a conductive layer 332b that function as a source and a drain, a semiconductor layer 337, and a gate insulating layer. It has an insulating layer 335 and a conductive layer 333 that functions as a gate.
  • the insulating layer 338 is located between the conductive layer 331 and the semiconductor layer 337.
  • the insulating layer 335 is located between the conductive layer 333 and the semiconductor layer 337.
  • the transistor 330 is preferably covered with an insulating layer 334.
  • the insulating layer 334 may be included in the components of the transistor 330.
  • a configuration in which a semiconductor layer on which a channel is formed is sandwiched between two gates is applied to the transistor 320 and the transistor 330.
  • Transistors may be driven by connecting two gates and supplying them with the same signal.
  • the threshold voltage of the transistor may be controlled by giving a potential for controlling the threshold voltage to one of the two gates and giving a potential for driving to the other.
  • the insulating layer can function as a barrier layer.
  • an inorganic insulating film as the insulating layer 325, the insulating layer 326, the insulating layer 328, the insulating layer 334, the insulating layer 335, and the insulating layer 338, respectively.
  • the inorganic insulating film for example, a silicon nitride film, a silicon nitride film, a silicon oxide film, a silicon nitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, neodymium oxide film and the like may be used. Further, two or more of the above-mentioned insulating films may be laminated and used.
  • the material that can be used for various conductive layers constituting the light emitting device is a metal such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or a main component thereof. Examples include alloys. Further, a film containing these materials can be used as a single layer or as a laminated structure. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, and a copper film on a copper-magnesium-aluminum alloy film.
  • An oxide such as indium oxide, tin oxide or zinc oxide may be used. Further, it is preferable to use copper containing manganese because the controllability of the shape by etching is improved.
  • FIG. 6A and 6B show an example of a light receiving device having a layer containing an organic compound between a pair of electrodes.
  • the light receiving device shown in FIG. 6A has a structure in which a layer 105 containing an organic compound is sandwiched between a first electrode 101 and a second electrode 102.
  • the layer 105 containing the organic compound has at least an active layer.
  • FIG. 6B shows an example of the laminated structure of the layer 105 containing the organic compound.
  • the light receiving device is driven by applying a reverse bias between the first electrode 101 and the second electrode 102 to detect light incident on the light receiving device, generate an electric charge, and extract it as an electric current.
  • the layer 105 containing the organic compound has a structure in which the hole transport layer 116, the active layer 117, and the electron transport layer 118 are sequentially laminated on the first electrode 101.
  • the hole transport layer 116, the active layer 117, and the electron transport layer 118 may each have a single-layer structure or a laminated structure.
  • the stacking order is reversed.
  • the active layer 117 includes a semiconductor.
  • the semiconductor include an inorganic semiconductor such as silicon and an organic semiconductor containing an organic compound.
  • an organic semiconductor is used as the semiconductor of the active layer.
  • the light emitting layer of the light emitting device and the active layer 117 can be formed by the same method (for example, vacuum vapor deposition method), and the manufacturing apparatus can be shared, which is preferable.
  • n-type semiconductor material contained in the active layer 117 examples include electron-accepting organic semiconductor materials such as fullerenes (for example, C 60 and C 70) and fullerene derivatives.
  • Examples of the material for the n-type semiconductor include a metal complex having a quinoline skeleton, a metal complex having a benzoquinoline skeleton, a metal complex having an oxazole skeleton, a metal complex having a thiazole skeleton, an oxadiazole derivative, a triazole derivative, and an imidazole derivative.
  • Examples of the material for the p-type semiconductor contained in the active layer 117 include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperichanine (DBP), zinc phthalocyanine (Zinc Phthalocyanine; CuPc), and zinc phthalocyanine (Zinc Phthalocyanine; CuPc).
  • Examples thereof include electron-donating organic semiconductor materials such as phthalocyanine (SnPc) and quinacridone.
  • Examples of the material of the p-type semiconductor include a carbazole derivative, a thiophene derivative, a furan derivative, and a compound having an aromatic amine skeleton. Further, as the material of the p-type semiconductor, naphthalene derivative, anthracene derivative, pyrene derivative, triphenylene derivative, fluorene derivative, pyrrole derivative, benzofuran derivative, benzothiophene derivative, indole derivative, dibenzofuran derivative, dibenzothiophene derivative, indolocarbazole derivative, Examples thereof include a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, a quinacridone derivative, a polyphenylene vinylene derivative, a polyparaphenylene derivative, a polyfluorene derivative, a polyvinylcarbazole derivative, and a polythiophene derivative.
  • the HOMO level of the electron-donating organic semiconductor material is preferably higher than the HOMO level of the electron-accepting organic semiconductor material.
  • the LUMO level of the electron-donating organic semiconductor material is preferably higher than the LUMO level of the electron-accepting organic semiconductor material.
  • spherical fullerene As the electron-accepting organic semiconductor material and to use an organic semiconductor material having a shape close to a plane as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close, so carrier transportability can be improved.
  • the active layer 117 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
  • the active layer 117 may have a laminated structure of a layer having an n-type semiconductor and a layer having a p-type semiconductor.
  • the same material as the electrode of the light emitting device described in the second embodiment can be used.
  • the hole transport layer 116 it is preferable to use the composite material of one aspect of the present invention described in the first embodiment.
  • a single material or a material that can be used for the hole injection layer 111 of the light emitting device described in the second embodiment a material that can be used for the hole transport layer 112, or the like is used. Multiple can be used. That is, the hole transport layer 116 can have the same configuration as one or both of the hole injection layer 111 and the hole transport layer 112 of the light emitting device described in the second embodiment.
  • the electron transport layer 118 a single or a plurality of materials such as a material that can be used for the electron transport layer 114 of the light emitting device described in the second embodiment and a material that can be used for the electron injection layer 115 can be used. .. That is, the electron transport layer 118 can have the same configuration as one or both of the electron transport layer 114 and the electron injection layer 115 of the light emitting device described in the second embodiment.
  • a light emitting / receiving device In the laminated structure shown in FIGS. 6A and 6B, a light emitting / receiving device is provided by providing a light emitting layer 113 in addition to the hole transport layer 116, the active layer 117, and the electron transport layer 118 as the layer 105 containing the organic compound. Can function as.
  • the light emitting layer 113 is preferably provided between the hole transport layer 116 and the active layer 117, or between the active layer 117 and the electron transport layer 118. Further, it is preferable to provide a buffer layer between the light emitting layer 113 and the active layer 117.
  • the light receiving / receiving device can serve as both a light emitting device and a light receiving device, the number of devices arranged in one pixel can be reduced. Therefore, it becomes easy to increase the definition, the aperture ratio, and the resolution of the display device.
  • the light receiving / receiving device has a light receiving function and a light emitting function.
  • a display device having a light receiving function will be described.
  • the display device of the present embodiment has a light receiving device or a light receiving / receiving device in addition to the light emitting device.
  • the display device of the present embodiment has a function of displaying an image by using a light emitting device (and a light receiving / receiving device). That is, the light emitting device (and the light receiving / receiving device) functions as a display device.
  • the light emitting device functions as a display device (also referred to as a display element).
  • a display device also referred to as a display element.
  • an EL device such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode).
  • an LED such as a micro LED (Light Emitting Diode) can also be used. Since the light emitting device using the composite material of one aspect of the present invention described in the first embodiment has high light extraction efficiency and reliability, it can be suitably used for the display device of one aspect of the present invention.
  • the display device of the present embodiment has a function of detecting light by using a light receiving device or a light receiving / receiving device.
  • the display device of the present embodiment can capture an image.
  • the display device of this embodiment can be used as a scanner.
  • an image sensor can be used to acquire data related to biological information such as fingerprints and palm prints.
  • the display device can incorporate a biometric authentication sensor.
  • the biometric authentication sensor By incorporating the biometric authentication sensor in the display device, the number of parts of the electronic device can be reduced, and the size and weight of the electronic device can be reduced as compared with the case where the biometric authentication sensor is provided separately from the display device. ..
  • the display device of the present embodiment can detect the proximity or contact of an object.
  • a pn type or pin type photodiode can be used as the light receiving device.
  • an organic photodiode having a layer containing an organic compound as the light receiving device.
  • Organic photodiodes can be easily made thinner, lighter, and have a larger area, and have a high degree of freedom in shape and design, so that they can be applied to various display devices.
  • the light receiving device using the composite material of one aspect of the present invention described in the present embodiment can be suitably used for the display device of one aspect of the present invention.
  • the display device of one aspect of the present invention has an organic EL device as a light emitting device and an organic photodiode as a light receiving device.
  • the organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be built in a display device using an organic EL device.
  • the light-receiving device can be manufactured by adding an active layer of the light-receiving device to the configuration of the light-emitting device.
  • an active layer of a pn type or pin type photodiode can be used.
  • an active layer of an organic photodiode having a layer containing an organic compound for the light receiving / receiving device can be suitably used for the display device of one aspect of the present invention.
  • the light receiving / receiving device can be manufactured by combining an organic EL device and an organic photodiode.
  • a light receiving / receiving device can be manufactured by adding an active layer of an organic photodiode to a laminated structure of an organic EL device.
  • the increase in the film forming process can be suppressed by forming a film in a batch of layers that can be formed in the same configuration as the organic EL device.
  • the light emitting device can be used as a light source of the sensor. Therefore, it is not necessary to provide a light receiving unit and a light source separately from the display device, and the number of parts of the electronic device can be reduced.
  • FIG. 6C shows a cross-sectional view of the display device 500A.
  • the display device 500A has a light receiving device 510, a light emitting device 590, a transistor 531, a transistor 532, and the like between a pair of boards (board 551 and board 552).
  • the light emitting device 590 has a pixel electrode 591, a buffer layer 512, a light emitting layer 593, a buffer layer 514, and a common electrode 515 stacked in this order.
  • the buffer layer 512 can have one or both of the hole injecting layer and the hole transporting layer.
  • the light emitting layer 593 has an organic compound.
  • the buffer layer 514 can have one or both of an electron injection layer and an electron transport layer.
  • the light emitting device 590 has a function of emitting visible light.
  • the display device 500A may further include a light emitting device 590 having a function of emitting infrared light.
  • the light receiving device 510 has a pixel electrode 511, a buffer layer 512, an active layer 513, a buffer layer 514, and a common electrode 515 stacked in this order.
  • the buffer layer 512 functions as a hole transport layer.
  • the active layer 513 has an organic compound.
  • the light receiving device 510 has a function of detecting visible light.
  • the buffer layer 514 functions as an electron transport layer.
  • the light receiving device 510 may further have a function of detecting infrared light.
  • the buffer layer 512, the buffer layer 514, and the common electrode 515 are layers common to the light emitting device 590 and the light receiving device 510, and are provided over these layers.
  • the pixel electrode 511 functions as an anode and the common electrode 515 functions as a cathode. That is, by driving the light receiving device 510 by applying a reverse bias between the pixel electrode 511 and the common electrode 515, the display device 500A detects the light incident on the light receiving device 510, generates an electric charge, and causes a current. Can be taken out as.
  • the pixel electrode 511, the buffer layer 512, the active layer 513, the light emitting layer 593, the buffer layer 514, and the common electrode 515 may each have a single layer structure or a laminated structure.
  • the pixel electrode 511 and the pixel electrode 591 are located on the insulating layer 533.
  • the end portion of the pixel electrode 511 and the end portion of the pixel electrode 591 are each covered with an insulating layer 534.
  • the pixel electrodes 511 and the pixel electrodes 591 that are adjacent to each other are electrically insulated from each other by the insulating layer 534 (also referred to as being electrically separated).
  • An organic insulating film is suitable as the insulating layer 534.
  • Examples of the material that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. ..
  • the insulating layer 534 may have a function of transmitting visible light or may have a function of blocking visible light.
  • the materials and film thicknesses of the pair of electrodes included in the light receiving device 510 and the light emitting device 590 can be made equal. This makes it possible to reduce the manufacturing cost of the display device and simplify the manufacturing process.
  • the buffer layer 512, the active layer 513, and the buffer layer 514 located between the pixel electrode 511 and the common electrode 515, respectively, can be said to be an organic layer (a layer containing an organic compound).
  • the pixel electrode 511 preferably has a function of reflecting visible light.
  • the common electrode 515 has a function of transmitting visible light.
  • the common electrode 515 has a function of transmitting infrared light.
  • it is preferable that the pixel electrode 511 has a function of reflecting infrared light.
  • the light receiving device 510 has a function of detecting light.
  • the light receiving device 510 is a photoelectric conversion device (also referred to as a photoelectric conversion element) that receives light 522 incident from the outside of the display device 500A and converts it into an electric signal.
  • the light 522 can also be said to be light reflected by an object from the light emitted by the light emitting device 590. Further, the light 522 may be incident on the light receiving device 510 via a lens or the like provided in the display device 500A.
  • the buffer layer 512, the light emitting layer 593, and the buffer layer 514 located between the pixel electrode 591 and the common electrode 515, respectively, can be collectively referred to as an EL layer.
  • the EL layer has at least a light emitting layer 593.
  • the pixel electrode 591 preferably has a function of reflecting visible light.
  • the common electrode 515 has a function of transmitting visible light.
  • the display device 500A has a configuration including a light emitting device that emits infrared light
  • the common electrode 515 has a function of transmitting infrared light.
  • it is preferable that the pixel electrode 591 has a function of reflecting infrared light.
  • the light emitting device 590 has a function of emitting visible light. Specifically, the light emitting device 590 is an electroluminescent device that emits light to the substrate 552 side by applying a voltage between the pixel electrode 591 and the common electrode 515 (see light 521).
  • the pixel electrode 511 of the light receiving device 510 is electrically connected to the source or drain of the transistor 531 via an opening provided in the insulating layer 533.
  • the pixel electrode 591 of the light emitting device 590 is electrically connected to the source or drain of the transistor 532 through an opening provided in the insulating layer 533.
  • the transistor 531 and the transistor 532 are in contact with each other on the same layer (the substrate 551 in FIG. 6C).
  • At least a part of the circuit electrically connected to the light receiving device 510 is formed of the same material and the same process as the circuit electrically connected to the light emitting device 590.
  • the thickness of the display device can be reduced and the manufacturing process can be simplified as compared with the case where the two circuits are formed separately.
  • the light receiving device 510 and the light emitting device 590 are each covered with a protective layer 595.
  • the protective layer 595 is provided in contact with the common electrode 515.
  • the protective layer 595 it is possible to prevent impurities such as water from entering the light receiving device 510 and the light emitting device 590, and to improve the reliability of the light receiving device 510 and the light emitting device 590.
  • the protective layer 595 and the substrate 552 are bonded to each other by the adhesive layer 553.
  • a light-shielding layer 554 is provided on the surface of the substrate 552 on the substrate 551 side.
  • the light-shielding layer 554 has an opening at a position overlapping with the light emitting device 590 and a position overlapping with the light receiving device 510.
  • the light receiving device 510 detects the light emitted by the light emitting device 590 reflected by the object.
  • the light emitted from the light emitting device 590 may be reflected in the display device 500A and may be incident on the light receiving device 510 without passing through the object.
  • the light-shielding layer 554 can suppress the influence of such stray light. As a result, noise can be reduced and the sensitivity of the sensor using the light receiving device 510 can be increased.
  • the light-shielding layer 554 a material that blocks light emitted from the light-emitting device can be used.
  • the light-shielding layer 554 preferably absorbs visible light.
  • a metal material, a resin material containing a pigment (carbon black or the like) or a dye, or the like can be used to form a black matrix.
  • the light-shielding layer 554 may have a laminated structure of at least two layers of a red color filter, a green color filter, and a blue color filter.
  • FIG. 6D shows a cross-sectional view of the display device 500B.
  • the description of the same configuration as the display device 500A described above may be omitted.
  • the display device 500B includes a light emitting device 590B, a light emitting device 590G, and a light receiving / receiving device 580SR.
  • the light emitting device 590B has a pixel electrode 591B, a buffer layer 512, a light emitting layer 593B, a buffer layer 514, and a common electrode 515 stacked in this order.
  • the light emitting device 590B has a function of emitting blue light 521B.
  • the light emitting device 590B is electrically connected to the transistor 532B.
  • the light emitting device 590G has a pixel electrode 591G, a buffer layer 512, a light emitting layer 593G, a buffer layer 514, and a common electrode 515 stacked in this order.
  • the light emitting device 590G has a function of emitting green light 521G.
  • the light emitting device 590G is electrically connected to the transistor 532G.
  • the light receiving / receiving device 580SR has a pixel electrode 511, a buffer layer 512, an active layer 513, a light emitting layer 593R, a buffer layer 514, and a common electrode 515 stacked in this order.
  • the light receiving / receiving device 580SR has a function of emitting red light 521R and a function of detecting light 522.
  • the light receiving / receiving device 580SR is electrically connected to the transistor 531.
  • the display device 500C shown in FIG. 7A includes a substrate 551, a substrate 552, a light receiving device 510, a light emitting device 590R, a light emitting device 590G, a light emitting device 590B, a functional layer 555, and the like.
  • the light emitting device 590R, the light emitting device 590G, the light emitting device 590B, and the light receiving device 510 are provided between the substrate 551 and the substrate 552.
  • the light emitting device 590R, the light emitting device 590G, and the light emitting device 590B emit red (R), green (G), or blue (B) light, respectively.
  • the display device 500C has a plurality of pixels arranged in a matrix.
  • One pixel has one or more sub-pixels.
  • One sub-pixel has one light emitting device.
  • the pixel has a configuration having three sub-pixels (three colors of R, G, B, or three colors of yellow (Y), cyan (C), and magenta (M), etc.), or sub-pixels. (4 colors of R, G, B, white (W), 4 colors of R, G, B, Y, etc.) can be applied.
  • the pixel has a light receiving device 510.
  • the light receiving device 510 may be provided in all the pixels or may be provided in some of the pixels. Further, one pixel may have a plurality of light receiving devices 510.
  • FIG. 7A shows how the finger 520 touches the surface of the substrate 552.
  • a part of the light emitted by the light emitting device 590G is reflected at the contact portion between the substrate 552 and the finger 520. Then, when a part of the reflected light is incident on the light receiving device 510, it is possible to detect that the finger 520 is in contact with the substrate 552. That is, the display device 500C can function as a touch panel.
  • the functional layer 555 has a circuit for driving the light emitting device 590R, the light emitting device 590G, and the light emitting device 590B, and a circuit for driving the light receiving device 510.
  • the functional layer 555 is provided with a switch, a transistor, a capacitance, wiring, and the like.
  • the switch and the transistor may not be provided.
  • the display device 500D shown in FIG. 7B has a light emitting device 590IR in addition to the configuration exemplified in FIG. 7A.
  • the light emitting device 590IR is a light emitting device that emits infrared light IR. That is, the display device 500D is configured to include a light emitting device that exhibits visible light, a light emitting device that exhibits infrared light, and a light receiving device. At this time, it is preferable that the light receiving device 510 can receive at least the infrared light IR emitted by the light emitting device 590IR. Further, it is more preferable that the light receiving device 510 can receive both visible light and infrared light.
  • the infrared light IR emitted from the light emitting device 590IR is reflected by the finger 520, and a part of the reflected light is incident on the light receiving device 510.
  • the position information of the finger 520 can be acquired.
  • the display device 500E shown in FIG. 7C has a light emitting device 590B, a light emitting device 590G, and a light emitting / receiving device 580SR.
  • the light receiving / receiving device 580SR has a function as a light emitting device that emits red (R) light and a function as a photoelectric conversion device that receives visible light. That is, the display device 500E is configured to include a light emitting device that exhibits visible light and a light receiving / receiving device that exhibits visible light and receives visible light.
  • FIG. 7C shows an example in which the light emitting / receiving device 580SR receives the green (G) light emitted by the light emitting device 590G.
  • the light emitting / receiving device 580SR may receive the blue (B) light emitted by the light emitting device 590B. Further, the light receiving / receiving device 580SR may receive both green light and blue light.
  • the light receiving / receiving device 580SR preferably receives light having a shorter wavelength than the light emitted by itself.
  • the light receiving / receiving device 580SR may be configured to receive light having a wavelength longer than the light emitted by itself (for example, infrared light).
  • the light receiving / receiving device 580SR may be configured to receive light having the same wavelength as the light emitted by itself, but in that case, the light emitted by itself may also be received, and the luminous efficiency may decrease. Therefore, it is preferable that the light receiving / receiving device 580SR is configured so that the peak of the light emitting spectrum and the peak of the absorption spectrum do not overlap as much as possible.
  • the light emitted by the light receiving / receiving device is not limited to red light. Further, the light emitted by the light emitting device is not limited to the combination of green light and blue light. For example, the light receiving / receiving device may emit green or blue light and may receive light having a wavelength different from the light emitted by itself.
  • the light emitting / receiving device 580SR serves as both the light emitting device and the light receiving device, so that the number of devices arranged in one pixel can be reduced. Therefore, it becomes easy to increase the definition, the aperture ratio, and the resolution of the display device.
  • Examples of electronic devices include television devices, monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones (also referred to as mobile phones and mobile phone devices), portable game machines, and mobile information terminals. Examples include sound reproduction devices, large game machines such as pachinko machines, biometric authentication devices, and inspection devices.
  • the electronic device of the present embodiment has the light emitting device of one aspect of the present invention in the display unit, the light emitting efficiency is high and the reliability is high.
  • the electronic device of one aspect of the present invention is not limited to the configuration having the light emitting device of one aspect of the present invention, and has the light receiving device of one aspect of the present invention or the light receiving / receiving device of one aspect of the present invention. You may be.
  • the display unit of the electronic device of the present embodiment can display, for example, a full high-definition image having a resolution of 4K2K, 8K4K, 16K8K, or higher.
  • the screen size of the display unit may be 20 inches or more diagonally, 30 inches or more diagonally, 50 inches or more diagonally, 60 inches or more diagonally, or 70 inches or more diagonally.
  • the electronic device of one aspect of the present invention is flexible, it can be incorporated along the inner or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.
  • the electronic device of one aspect of the present invention may have a secondary battery, and it is preferable that the secondary battery can be charged by using non-contact power transmission.
  • the secondary battery examples include a lithium ion secondary battery such as a lithium polymer battery (lithium ion polymer battery) using a gel-like electrolyte, a nickel hydrogen battery, a nicad battery, an organic radical battery, a lead storage battery, an air secondary battery, and nickel.
  • a lithium ion secondary battery such as a lithium polymer battery (lithium ion polymer battery) using a gel-like electrolyte, a nickel hydrogen battery, a nicad battery, an organic radical battery, a lead storage battery, an air secondary battery, and nickel.
  • Examples include a zinc battery and a silver-zinc battery.
  • the electronic device of one aspect of the present invention may have an antenna.
  • the display unit can display video or information.
  • the antenna may be used for non-contact power transmission.
  • the electronic device of the present embodiment is a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage. , Including the ability to measure power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays).
  • the electronic device of this embodiment can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display a date or time, a function to execute various software (programs), wireless communication. It can have a function, a function of reading a program or data recorded on a recording medium, and the like.
  • FIG. 8A shows an example of a television device.
  • the display unit 7000 is incorporated in the housing 7101.
  • a configuration in which the housing 7101 is supported by the stand 7103 is shown.
  • a light emitting device of one aspect of the present invention can be applied to the display unit 7000.
  • the operation of the television device 7100 shown in FIG. 8A can be performed by the operation switch provided in the housing 7101 and the separate remote control operation machine 7111.
  • the display unit 7000 may be provided with a touch sensor, and may be operated by touching the display unit 7000 with a finger or the like.
  • the remote control operation machine 7111 may have a display unit for displaying information output from the remote control operation machine 7111.
  • the channel and volume can be operated by the operation keys or the touch panel provided on the remote controller 7111, and the image displayed on the display unit 7000 can be operated.
  • the television device 7100 is configured to include a receiver, a modem, and the like.
  • a general television broadcast can be received by the receiver.
  • information communication is performed in one direction (sender to receiver) or two-way (sender and receiver, or between receivers, etc.). It is also possible.
  • FIG. 8B shows an example of a notebook personal computer.
  • the notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • a display unit 7000 is incorporated in the housing 7211.
  • a light emitting device of one aspect of the present invention can be applied to the display unit 7000.
  • 8C and 8D show an example of digital signage.
  • the digital signage 7300 shown in FIG. 8C has a housing 7301, a display unit 7000, a speaker 7303, and the like. Further, it may have an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.
  • FIG. 8D is a digital signage 7400 attached to a columnar pillar 7401.
  • the digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.
  • the light emitting device of one aspect of the present invention can be applied to the display unit 7000.
  • the wider the display unit 7000 the more information can be provided at one time. Further, the wider the display unit 7000 is, the easier it is to be noticed by people, and for example, the advertising effect of the advertisement can be enhanced.
  • the touch panel By applying the touch panel to the display unit 7000, not only the image or moving image can be displayed on the display unit 7000, but also the user can intuitively operate the display unit 7000, which is preferable. In addition, when used for the purpose of providing information such as route information or traffic information, usability can be improved by intuitive operation.
  • the digital signage 7300 or the digital signage 7400 can be linked with the information terminal 7311 such as a smartphone or the information terminal 7411 owned by the user by wireless communication.
  • the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Further, by operating the information terminal 7311 or the information terminal 7411, the display of the display unit 7000 can be switched.
  • the digital signage 7300 or the digital signage 7400 can be made to execute a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). As a result, an unspecified number of users can participate in and enjoy the game at the same time.
  • FIGS. 9A-9F show an example of a portable information terminal having a flexible display unit 7001.
  • the display unit 7001 is manufactured by using the light emitting device of one aspect of the present invention. For example, a light emitting device capable of bending with a radius of curvature of 0.01 mm or more and 150 mm or less can be applied. Further, the display unit 7001 may be provided with a touch sensor, and the portable information terminal can be operated by touching the display unit 7001 with a finger or the like.
  • FIGS. 9A-9C show an example of a foldable mobile information terminal.
  • 9A shows an unfolded state
  • FIG. 9B shows a state in which one of the unfolded state or the folded state is in the process of changing from the other
  • FIG. 9C shows the mobile information terminal 7600 in the folded state.
  • the mobile information terminal 7600 is excellent in portability in the folded state, and is excellent in listability due to the wide seamless display area in the unfolded state.
  • the display unit 7001 is supported by three housings 7601 connected by a hinge 7602. By bending between the two housings 7601 via the hinge 7602, the mobile information terminal 7600 can be reversibly deformed from the unfolded state to the folded state.
  • FIG. 9D and 9E show an example of a foldable mobile information terminal.
  • FIG. 9D shows a mobile information terminal 7650 in a state in which the display unit 7001 is folded so as to be inside
  • FIG. 9E shows a mobile information terminal 7650 in a state in which the display unit 7001 is folded so as to be outside.
  • the mobile information terminal 7650 has a display unit 7001 and a non-display unit 7651.
  • the display unit 7001 can be folded so as to be inward so that the display unit 7001 can be prevented from being soiled or damaged.
  • FIG. 9F shows an example of a wristwatch-type portable information terminal.
  • the mobile information terminal 7800 has a band 7801, a display unit 7001, an input / output terminal 7802, an operation button 7803, and the like.
  • the band 7801 has a function as a housing.
  • the portable information terminal 7800 can be equipped with a flexible battery 7805.
  • the battery 7805 may be arranged so as to overlap with the display unit 7001 or the band 7801, for example.
  • the band 7801, the display 7001 and the battery 7805 are flexible. Therefore, it is easy to bend the portable information terminal 7800 into a desired shape.
  • the operation button 7803 can have various functions such as power on / off operation, wireless communication on / off operation, execution / cancellation of manner mode, execution / cancellation of power saving mode, and the like. ..
  • the function of the operation button 7803 can be freely set by the operating system incorporated in the mobile information terminal 7800.
  • the application can be started by touching the icon 7804 displayed on the display unit 7001 with a finger or the like.
  • the mobile information terminal 7800 can execute short-range wireless communication standardized for communication. For example, by communicating with a headset capable of wireless communication, it is possible to make a hands-free call.
  • the mobile information terminal 7800 may have an input / output terminal 7802.
  • data can be directly exchanged with another information terminal via the connector. It is also possible to charge via the input / output terminal 7802.
  • the charging operation of the mobile information terminal illustrated in this embodiment may be performed by non-contact power transmission without going through the input / output terminals.
  • FIG. 10A shows the appearance of the automobile 9700.
  • FIG. 10B shows the driver's seat of the automobile 9700.
  • the automobile 9700 has a vehicle body 9701, wheels 9702, a windshield 9703, a light 9704, a fog lamp 9705, and the like.
  • the light emitting device of one aspect of the present invention can be used for a display unit of an automobile 9700 or the like.
  • the light emitting device of one aspect of the present invention can be provided in the display units 9710 to 9715 shown in FIG. 10B.
  • the light emitting device of one aspect of the present invention may be used for the light 9704 or the fog lamp 9705.
  • the display unit 9710 and the display unit 9711 are display devices provided on the windshield of an automobile.
  • the light emitting device of one aspect of the present invention can be in a so-called see-through state in which the opposite side can be seen through by manufacturing the electrodes and wiring with a conductive material having translucency. If the display unit 9710 or the display unit 9711 is in a see-through state, the visibility is not obstructed even when the automobile 9700 is driven. Therefore, the light emitting device of one aspect of the present invention can be installed on the windshield of the automobile 9700.
  • a transistor for driving a light emitting device it is preferable to use a transistor having translucency, such as an organic transistor using an organic semiconductor material or a transistor using an oxide semiconductor.
  • the display unit 9712 is a display device provided in the pillar portion.
  • the field of view blocked by the pillars can be complemented by displaying the image from the image pickup means provided on the vehicle body on the display unit 9712.
  • the display unit 9713 is a display device provided in the dashboard portion.
  • the field of view blocked by the dashboard can be complemented. That is, by projecting an image from an image pickup means provided on the outside of the automobile, the blind spot can be supplemented and the safety can be enhanced.
  • the blind spot can be supplemented and the safety can be enhanced.
  • by projecting an image that complements the invisible part it is possible to confirm safety more naturally and without discomfort.
  • FIG. 10C shows the interior of an automobile in which bench seats are used for the driver's seat and the passenger seat.
  • the display unit 9721 is a display device provided on the door unit.
  • the field of view blocked by the door can be complemented by displaying the image from the image pickup means provided on the vehicle body on the display unit 9721.
  • the display unit 9722 is a display device provided on the handle.
  • the display unit 9723 is a display device provided in the central portion of the seat surface of the bench seat. It is also possible to install the display device on the seat surface or the backrest portion and use the display device as a seat heater using the heat generated by the display device as a heat source.
  • the display unit 9714, the display unit 9715, or the display unit 9722 can provide various information by displaying navigation information, a speedometer, a tachometer, a mileage, a fuel gauge, a gear status, an air conditioning setting, and the like. ..
  • the display items and layout displayed on the display unit can be appropriately changed according to the user's preference.
  • the above information can also be displayed on the display unit 9710 to the display unit 9713, the display unit 9721, and the display unit 9723.
  • the display unit 9710 to the display unit 9715 and the display unit 9721 to the display unit 9723 can also be used as a lighting device.
  • the display unit 9710 to the display unit 9715 and the display unit 9721 to the display unit 9723 can also be used as a heating device.
  • the electronic device of one aspect of the present invention has the light emitting device of one aspect of the present invention as a light source, the luminous efficiency is high and the reliability is high.
  • the light emitting device of one aspect of the present invention can be used as a light source that emits visible light or near infrared light. Further, the light emitting device of one aspect of the present invention can also be used as a light source of a lighting device.
  • FIG. 11A is a biometric authentication device for a finger vein, which has a housing 911, a light source 912, a detection stage 913, and the like. By placing a finger on the detection stage 913, the shape of the vein can be imaged.
  • a light source 912 that emits near-infrared light is installed in the upper part of the detection stage 913, and an image pickup device 914 is installed in the lower part.
  • the detection stage 913 is made of a material that transmits near-infrared light, and the near-infrared light that is irradiated from the light source 912 and transmitted through the finger can be imaged by the image pickup apparatus 914.
  • An optical system may be provided between the detection stage 913 and the image pickup apparatus 914.
  • the configuration of the above device can also be used for a biometric authentication device for a vein in the palm of the hand.
  • the light emitting device of one aspect of the present invention can be used for the light source 912.
  • the light emitting device of one aspect of the present invention can be installed in a curved shape, and can uniformly irradiate an object with light.
  • a light emitting device that emits near-infrared light having the strongest peak intensity at a wavelength of 700 nm or more and 1200 nm or less is preferable.
  • the position of a vein can be detected by receiving and imaging the light transmitted through a finger or the palm of the hand.
  • the action can be used as biometric authentication.
  • highly accurate sensing is possible even if the subject is moving.
  • the light source 912 can have a plurality of light emitting units as shown in the light emitting units 915, 916, and 917 shown in FIG. 11B.
  • the light emitting units 915, 916, and 917 may emit light at different wavelengths.
  • each can be irradiated at different timings. Therefore, different images can be continuously captured by changing one or both of the wavelength and the angle of the emitted light, so that a plurality of images can be used for authentication and high security can be realized.
  • FIG. 11C is a biometric authentication device for a vein in the palm of the hand, and has a housing 921, an operation button 922, a detection unit 923, a light source 924 that emits near-infrared light, and the like.
  • a light source 924 is arranged around the detection unit 923 to irradiate an object (hand). Then, the reflected light from the object is incident on the detection unit 923.
  • the light emitting device of one aspect of the present invention can be used for the light source 924.
  • An image pickup device 925 is arranged directly under the detection unit 923, and an image of an object (overall image of the hand) can be captured.
  • An optical system may be provided between the detection unit 923 and the image pickup device 925.
  • the configuration of the above device can also be used for a biometric authentication device for a finger vein.
  • FIG. 11D is a non-destructive inspection device, which includes a housing 931, an operation panel 932, a transport mechanism 933, a monitor 934, a detection unit 935, a light source 938 that emits near infrared light, and the like.
  • the light emitting device of one aspect of the present invention can be used for the light source 938.
  • the member to be inspected 936 is transported directly under the detection unit 935 by the transport mechanism 933.
  • the member to be inspected 936 is irradiated with near-infrared light from the light source 938, and the transmitted light is imaged by an image pickup device 937 provided in the detection unit 935.
  • the captured image is displayed on the monitor 934. After that, it is transported to the outlet of the housing 931, and defective products are sorted and collected.
  • By imaging using near-infrared light defective elements such as defects and foreign substances inside the member to be inspected can be detected non-destructively and at high speed.
  • FIG. 11E is a mobile phone, which includes a housing 981, a display unit 982, an operation button 983, an external connection port 984, a speaker 985, a microphone 986, a first camera 987, a second camera 988, and the like.
  • the mobile phone includes a touch sensor on the display unit 982.
  • the housing 981 and the display unit 982 are flexible. All operations such as making a phone call or inputting characters can be performed by touching the display unit 982 with a finger or a stylus.
  • the first camera 987 can acquire a visible light image
  • the second camera 988 can acquire an infrared light image (near infrared light image).
  • the mobile phone or display unit 982 shown in FIG. 11E may have a light emitting device according to an aspect of the present invention.
  • the first electrode 801 is formed on the substrate 800, and the hole injection layer 811 and the hole transport layer are formed on the first electrode 801 as the EL layer 802. It has a structure in which 812, a light emitting layer 813, an electron transport layer 814, and an electron injection layer 815 are sequentially laminated, and a second electrode 803 is laminated on the electron injection layer 815.
  • the first electrode 801 was formed on the substrate 800.
  • the electrode area was 4 mm 2 (2 mm ⁇ 2 mm).
  • a glass substrate was used for the substrate 800.
  • the first electrode 801 was formed by forming a film of indium tin oxide (ITSO) containing silicon oxide with a film thickness of 55 nm by a sputtering method.
  • the first electrode 801 functions as an anode.
  • the surface of the substrate was washed with water, fired at 200 ° C. for 1 hour, and then UV ozone treatment was performed for 370 seconds.
  • the substrate was introduced into a vacuum vapor deposition apparatus whose internal pressure was reduced to about 10-4 Pa, vacuum fired at 170 ° C. for 30 minutes in a heating chamber inside the vacuum vapor deposition apparatus, and then the substrate was released for about 30 minutes. It was chilled.
  • a hole injection layer 811 was formed on the first electrode 801.
  • the hole injection layer 811 of the device 1 is N, N-bis (4-cyclohexylphenyl) -9,9-dimethyl-9H-fluorene-2-amine (after reducing the pressure in the vacuum vapor deposition apparatus to 10 -4 Pa).
  • the weight percent concentration of OCHD-001 in the hole injection layer 811 is 4.8 wt%, and the volume percent concentration is 3.6 vol%.
  • the hole transport layer 812 was formed on the hole injection layer 811.
  • the hole transport layer 812 of the device 1 is deposited with dcPAF so as to have a film thickness of 55 nm, and N, N-bis [4- (dibenzofuran-4-yl) phenyl] -4-amino-p-terphenyl ( Abbreviation: DBfBB1TP) was formed by vapor deposition so that the film thickness was 10 nm.
  • the hole transport layer 812 of the comparative device 2 was formed by depositing PCBBiF so as to have a film thickness of 55 nm and DBfBB1TP to have a film thickness of 10 nm.
  • a light emitting layer 813 was formed on the hole transport layer 812.
  • the light emitting layer 813 uses 9- (1-naphthyl) -10- [4- (2-naphthyl) phenyl] anthracene (abbreviation: ⁇ N- ⁇ NPAnth) as a host material, and 3, as a guest material (fluorescent material).
  • the electron transport layer 814 was formed on the light emitting layer 813.
  • the electron transport layer 814 is composed of 2- ⁇ 4- [9,10-di (naphthalen-2-yl) -2-anthryl] phenyl ⁇ -1-phenyl-1H-benzimidazole (abbreviation: ZADN) and 8-hydroxyquino.
  • an electron injection layer 815 was formed on the electron transport layer 814.
  • the electron injection layer 815 was formed by vapor-filming Liq so that the film thickness was 1 nm.
  • a second electrode 803 was formed on the electron injection layer 815.
  • the second electrode 803 was formed of aluminum so as to have a film thickness of 200 nm by a thin-film deposition method.
  • the second electrode 803 functions as a cathode.
  • a light emitting device having an EL layer 802 sandwiched between a pair of electrodes was formed on the substrate 800.
  • the vapor deposition method by the resistance heating method was used.
  • the produced light emitting device was sealed with another substrate (not shown).
  • another substrate (not shown) coated with an adhesive that is solidified by ultraviolet light is placed on the substrate 800 in a glove box having a nitrogen atmosphere.
  • the substrates were fixed and the substrates were adhered to each other so that the adhesive adhered to the periphery of the light emitting device formed on the substrate 800.
  • the adhesive was stabilized by irradiating it with 6 J / cm 2 of ultraviolet light of 365 nm to solidify the adhesive and heat-treating it at 80 ° C. for 1 hour.
  • the refractive index of the low refractive index material (dcPAF) used for the hole injection layer 811 and the hole transport layer 812 and the refractive index of PCBiF as a comparative material are shown in FIG.
  • a spectroscopic ellipsometer (M-2000U manufactured by JA Woolam Japan Co., Ltd.) was used for the measurement.
  • a film in which a material was formed on a quartz substrate by a vacuum vapor deposition method at about 50 nm was used.
  • n Ordinary which is the refractive index of ordinary light rays
  • n Extra-ordinary which is the refractive index of abnormal light rays
  • the refractive index of the layer made of dcPAF in the light having a wavelength of 633 nm was 1.65
  • the refractive index of the layer made of PCBiF in the light having a wavelength of 633 nm was 1.81.
  • the refractive index of the layer made of dcPAF in light having a wavelength of 460 nm was 1.71
  • the refractive index of the layer made of PCBiF in light having a wavelength of 460 nm was 1.94.
  • the LUMO level of OCHD-001 calculated from the results of cyclic voltammetry (CV) measurement is -5.27 eV when N, N-dimethylformamide (DMF) is a solvent, and when chloroform is a solvent. It was -5.40 eV.
  • DMF N-dimethylformamide
  • the HOMO level of dcPAF was ⁇ 5.36 eV
  • the HOMO level of PCBBiF was ⁇ 5.36 eV. From these facts, it can be said that OCHD-001 exhibits electron acceptability for dcPAF and PCBBiF.
  • an electrochemical analyzer manufactured by BAS Co., Ltd., model number: ALS model 600A or 600C
  • the hole mobilities of dcPAF and PCBBiF were measured using impedance spectroscopy (IS method). Specifically, a layer having a film thickness of 500 nm of dcPAF or PCBBiF was measured using an element sandwiched between a pair of electrodes of indium tin oxide (ITSO) and aluminum.
  • ITSO indium tin oxide
  • the region in contact with ITSO contained OCHD-001 at a concentration of 7 vol%, and the region in contact with aluminum contained molybdenum oxide (MoO 3 ) at a concentration of 17 vol%.
  • dcPAF is a hole transporting material that can be used in the composite material of one aspect of the present invention, and is a monoamine compound having high hole mobility.
  • ⁇ Operating characteristics of light emitting device ⁇ The operating characteristics of the light emitting device produced in this example were measured. The measurement was performed at room temperature using a spectroradiometer (SR-UL1R, manufactured by Topcon).
  • FIG. 14 shows the luminance-current density characteristics of the light emitting device.
  • FIG. 15 shows the current efficiency-luminance characteristics of the light emitting device.
  • FIG. 16 shows the current-voltage characteristics of the light emitting device.
  • FIG. 17 shows the external quantum efficiency-luminance characteristics of the light emitting device.
  • Table 2 shows the main initial characteristic values of the light emitting device at around 1000 cd / m 2.
  • the device 1 has higher luminous efficiency than the comparative device 2. Further, it was found that the device 1 has good drive characteristics without a significant increase in the drive voltage.
  • the dchPAF used for the device 1 has a lower refractive index than the PCBBiF used for the comparison device 2. As a result, the device 1 showed higher luminous efficiency than the comparative device 2. Further, in the device 1, dchPAF is used for both the hole injection layer 811 and the hole transport layer 812, and the layer having a low refractive index in the light emitting device is thick (the ratio of the layer having a low refractive index is large). Therefore, the effect of improving the light extraction efficiency is obtained.
  • the ratio of the number of carbon atoms forming a bond in the sp3 hybrid orbital to the total number of carbon atoms of dcPAF is 38.5%. Even if a material having many unsaturated bonds was used, no adverse effect on various characteristics (luminous efficiency, reliability described later, etc.) in the device 1 was confirmed.
  • both the device 1 and the comparative device 2 show an emission spectrum having a maximum peak near 458 nm, which is derived from the emission of 3,10PCA2Nbf (IV) -02 contained in the light emitting layer 813. rice field.
  • the time (LT95) until the brightness became 95% was 341 hours for the device 1 and 141 hours for the comparison device 2. Further, when the brightness after 1000 hours was compared, the device 1 maintained 83% of the initial brightness and the comparison device 2 maintained 80% of the initial brightness.
  • the weight percent concentration of OCHD-001 in the hole injection layer 811 is 9.1 wt%, and the volume percent concentration is 6.8 vol%.
  • the hole transport layer 812 was formed by depositing PCBBiF so as to have a film thickness of 20 nm.
  • the light emitting layer 813 is 9-[(3'-dibenzothiophen-4-yl) biphenyl-3-yl] naphtho [1', 2': 4,5] as a host material (which can be said to be the first host material).
  • Flo [2,3-b] pyrazine (abbreviation: 9mDBtBPNfpr) is used, PCBiF is used as an assist material (which can be said to be a second host material), and ⁇ 4,6-dimethyl-2 is used as a guest material (phosphorescent material).
  • 9mDBtBPNfpr is vapor-filmed so that the film thickness is 30 nm, and 2,9-bis (naphthalene-2-yl) -4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) is applied. It was formed by vapor deposition so as to have a thickness of 15 nm.
  • the electron injection layer 815 was formed by vapor-filming lithium fluoride (LiF) so as to have a film thickness of 1 nm.
  • the refractive index of the low refractive index material (mmtBumTPchPAF) used for the hole injection layer 811 and the refractive index of PCBBiF as a comparative material are shown in FIG.
  • a spectroscopic ellipsometer (M-2000U manufactured by JA Woolam Japan Co., Ltd.) was used for the measurement.
  • a film in which a material was formed on a quartz substrate by a vacuum vapor deposition method at about 50 nm was used.
  • n Ordinary which is the refractive index of ordinary light rays
  • n Extra-ordinary which is the refractive index of abnormal light rays
  • the refractive index of the layer made of mmtBumTPchPAF in the light having a wavelength of 633 nm was 1.62
  • the refractive index of the layer made of PCBBiF in the light having a wavelength of 633 nm was 1.81.
  • the glass transition temperature of mmtBumTPchPAF is 124 ° C. That is, it can be said that mmtBumTPchPAF is a material having a high glass transition temperature and a low refractive index.
  • the LUMO level of OCHD-001 calculated from the results of CV measurement is -5.27 eV when N, N-dimethylformamide (DMF) is a solvent, and-when chloroform is a solvent. It was 5.40 eV. When DMF was a solvent, the HOMO level of mmtBumTPchPAF was -5.42 eV. From these facts, it can be said that OCHD-001 exhibits electron acceptability for mmtBumTPchPAF.
  • the measuring device for CV measurement is the same as that of the first embodiment.
  • ⁇ Operating characteristics of light emitting device ⁇ The operating characteristics of the light emitting device produced in this example were measured. The measurement was performed at room temperature using a spectroradiometer (SR-UL1R, manufactured by Topcon).
  • FIG. 21 shows the luminance-current density characteristics of the light emitting device.
  • FIG. 22 shows the current efficiency-luminance characteristics of the light emitting device.
  • FIG. 23 shows the current-voltage characteristics of the light emitting device.
  • FIG. 24 shows the external quantum efficiency-luminance characteristics of the light emitting device.
  • Table 4 shows the main initial characteristic values of the light emitting device at around 1000 cd / m 2.
  • the device 3 and the comparison device 4 are light emitting devices exhibiting light having the same chromaticity. As shown in FIGS. 21 to 24 and Table 4, the device 3 was able to realize higher luminous efficiency with the same chromaticity as the comparative device 4 and with almost no change in the current-voltage characteristics.
  • Example 1 a layer having a low refractive index was used for both the hole injection layer 811 and the hole transport layer 812, but in Example 2, a layer having a low refractive index was used only for the hole injection layer 811. From the results of this example, it was found that high luminous efficiency can be obtained even if a layer having a low refractive index is applied only to the hole injection layer 811.
  • the hole injection layer 811 is thicker than that of the light emitting device of Example 1. Since the hole injection layer 811 is a highly conductive layer, the drive voltage of the light emitting device can be reduced by providing the hole injection layer 811 thickly. Since OCHD-001 hardly absorbs red light, the luminous efficiency did not decrease even if the hole injection layer 811 was thickened.
  • the ratio of the number of carbon atoms forming a bond in the sp3 hybrid orbital to the total number of carbon atoms of mmtBumTPchPAF is 41.0%. Even if a material having many unsaturated bonds was used, no adverse effect on various characteristics (luminous efficiency, reliability described later, etc.) of the device 3 was confirmed.
  • the emission spectrum near 1000 cd / m 2 in the light emitting device is shown in FIG. 25.
  • the device 3 showed an emission spectrum having a maximum peak near 644 nm due to the emission of [Ir (dmdppr-m5CP) 2 (dpm)] contained in the light emitting layer 813.
  • the comparative device 4 showed an emission spectrum having a maximum peak near 645 nm.
  • the vertical axis shows the normalized luminance (%) when the initial luminance is 100%
  • the horizontal axis shows the driving time (h).
  • the current density was set to 50 mA / cm 2 at room temperature, and the light emitting device was driven.
  • the device 3 has higher luminous efficiency than the comparative device 4 and can obtain the same reliability.
  • each of these organic compounds is an example of a material having a low refractive index and a hole transporting property.
  • all of these organic compounds have an ordinary light refractive index of 1.50 or more and 1.75 or less in the blue light emitting region (455 nm or more and 465 nm or less), and the refractive index is measured.
  • the refractive index of normal light in light of 633 nm, which is usually used for the above, is 1.45 or more and 1.70 or less.
  • the ratio of the number of carbon atoms forming a bond in the sp3 hybrid orbital to the total number of carbon atoms of each of these organic compounds is 23% or more and 55% or less.
  • dcPAF N, N-bis (4-cyclohexylphenyl) -9,9-dimethyl-9H-fluorene-2-amine
  • allyl palladium chloride dimer (II) (abbreviation: [(Allyl) PdCl] 2 ) 370 mg (1.0 mmol), di-tert-butyl (1-methyl-2,2-diphenylcyclopropyl) phosphine ( Abbreviation: cBRIDP®) 1660 mg (4.0 mmol) was added and the mixture was heated at 120 ° C. for about 5 hours. Then, the temperature of the flask was returned to about 60 ° C., and about 4 mL of water was added to precipitate a solid. The precipitated solid was filtered off. The filtrate was concentrated and the resulting solution was purified by silica gel column chromatography.
  • the obtained solution was concentrated to obtain a concentrated toluene solution.
  • This toluene solution was added dropwise to ethanol and reprecipitated.
  • the precipitate was filtered at about 10 ° C., and the obtained solid was dried under reduced pressure at about 80 ° C. to obtain 10.1 g of the desired white solid and a yield of 40%.
  • the synthesis scheme of dcPAF is shown below.
  • the glass transition temperature of mmtBuBichPAF represented by the structural formula (101) was 102 ° C.
  • Results of -N- (4-cyclohexylphenyl) -9,9-dimethyl-9H-fluorene-2-amine (abbreviation: mmtBumTPchPAF).
  • the glass transition temperature of mmtBumTPchPAF represented by the structural formula (102) was 124 ° C.
  • the glass transition temperature of mmtBumBichPAF represented by the structural formula (103) was 103 ° C.
  • the glass transition temperature of mmtBumBioFBi represented by the structural formula (104) was 102 ° C.
  • the glass transition temperature of mmtBumTPtBuPAF represented by the structural formula (105) was 123 ° C.
  • the glass transition temperature of mmtBumTPoFBi-02 represented by the structural formula (106) was 126 ° C.
  • the glass transition temperature of mmtBumTPchPAF-02 represented by the structural formula (107) was 127 ° C.

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DE102021107060A1 (de) 2020-04-03 2021-10-07 Semiconductor Energy Laboratory Co., Ltd. Arylamin-Verbindung, Material für Lochtransportschicht, Material für Lochinjektionsschicht, Licht emittierende Vorrichtung, Licht emittierendes Gerät, elektronisches Gerät und Beleuchtungsvorrichtung
JP7536246B2 (ja) * 2021-01-26 2024-08-20 株式会社ジャパンディスプレイ 検出装置
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