WO2021255987A1 - Power module and method for manufacturing power module - Google Patents

Power module and method for manufacturing power module Download PDF

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Publication number
WO2021255987A1
WO2021255987A1 PCT/JP2021/004270 JP2021004270W WO2021255987A1 WO 2021255987 A1 WO2021255987 A1 WO 2021255987A1 JP 2021004270 W JP2021004270 W JP 2021004270W WO 2021255987 A1 WO2021255987 A1 WO 2021255987A1
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WIPO (PCT)
Prior art keywords
metal member
metal
power semiconductor
power module
power
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PCT/JP2021/004270
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French (fr)
Japanese (ja)
Inventor
誠仁 望月
円丈 露野
英一 井出
順平 楠川
裕二朗 金子
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日立Astemo株式会社
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Publication of WO2021255987A1 publication Critical patent/WO2021255987A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a power module and a method for manufacturing the power module.
  • Power modules that convert power by switching power semiconductor elements are widely used for consumer, in-vehicle, railway, substation equipment, etc. because of their high conversion efficiency. Since this power semiconductor element repeatedly generates heat due to switching operation, high reliability is required for the heat dissipation of the power module. For example, in the case of in-vehicle use, higher reliability is required in response to the demand for miniaturization and weight reduction.
  • Patent Document 1 discloses that heat generated from a power device is transferred to a cooler via a circuit plate, an electrically insulating plate, and a stress relaxation plate, and is dissipated to a cooling fluid flowing in a cooling fluid passage. It is disclosed that the relaxation plate is made of a metal such as aluminum and copper having excellent thermal conductivity.
  • Patent Document 1 when plastic deformation occurs in the metal that transfers heat to the cooling member due to compressive stress, a gap is generated between the metal and the cooling member, the contact thermal resistance increases, and the heat dissipation is lowered.
  • the power module according to the present invention includes a power semiconductor element, a power semiconductor module including a conductor plate electrically connected to the power semiconductor element, and an insulating member laminated on the conductor plate, and heat dissipation of the power semiconductor module.
  • a cooling member arranged facing the surface and thermally connected to the surface and a first metal member arranged between the insulating member and the cooling member are provided, and the first metal member is said to have the same metal member. It has a second metal member embedded in the first metal member, and the second metal member is a metal material harder than the first metal member and thinner than the thickness of the first metal member. ..
  • the method for manufacturing a power module according to the present invention includes a power semiconductor element, a power semiconductor module including a conductor plate electrically connected to the power semiconductor element, and an insulating member laminated on the conductor plate, and the power semiconductor.
  • a method for manufacturing a power module including a cooling member arranged facing the heat radiation surface of the module and thermally connected to the insulating member, and a first metal member arranged between the insulating member and the cooling member.
  • the first step of burying the second metal member made of a metal material harder than the first metal member in the first metal member and the cooling member of the first metal member in which the second metal member is embedded. It is provided with a second step of joining with the first metal member, a third step of reducing the thickness of the first metal member by press processing, and a fourth step of bringing the power semiconductor module into close contact with the first metal member.
  • the present invention it is possible to suppress the plastic deformation of the metal that transfers heat to the cooling member and improve the reliability of heat dissipation.
  • the Z-axis direction orthogonal to the flat plate-shaped power semiconductor element is also referred to as "vertical direction”.
  • the X-axis direction along the flat plate-shaped power semiconductor element is also referred to as "horizontal direction”.
  • FIG. 1 is a diagram showing the appearance of the power module 100 according to the present embodiment.
  • the cooling member 45 is arranged on one surface of the power module 100.
  • the cooling member 45 is in contact with the power semiconductor module 101 via a first metal member 20, which will be described later.
  • each component such as the power semiconductor element 32 described later is sealed with a sealing resin 6.
  • the power semiconductor module 101 is cooled by circulating the refrigerant in the cooling member 45.
  • the refrigerant water or an antifreeze solution in which ethylene glycol is mixed with water is used.
  • the cooling member 45 may be a tube-shaped cooling member 45 or may use pin-shaped fins.
  • the cooling member 45 is formed by using a material having conductivity.
  • the cooling member 45 is formed by using, for example, Cu, Cu alloy, Cu—C, Cu—CuO or a composite material thereof, or Al, Al alloy, AlSiC, Al—C or a composite material thereof.
  • FIG. 1 shows an example of a power module 100 in which the DC positive electrode terminal 52 and the DC negative electrode terminal 53 oppose each other with the AC output terminal 54 and the control terminal 55. It may be 100.
  • FIG. 2 is a cross-sectional view of the power module 100 cut along the AA'line shown in FIG.
  • FIG. 3 is an enlarged cross-sectional view of the main part B of the power module 100 shown in FIG. 2
  • FIG. 4 is an enlarged cross-sectional view of the main part C of the power module 100 shown in FIG.
  • the power module 100 includes a power semiconductor element 32.
  • the power semiconductor element 32 is a semiconductor in which a transistor such as an IGBT (insulated gate bipolar transistor), an IEGT (injection enhanced gate transistor) or a MOSFET (metal-oxide-semiconductor field-effect transistor) is formed, or a diode is formed. It is composed of semiconductors.
  • FIG. 2 shows a semiconductor in which a transistor is formed as an example of a power semiconductor device 32.
  • the power semiconductor element 32 functions as a switching element.
  • the first electrode surface 32a of the power semiconductor element 32 corresponds to an emitter electrode
  • the second electrode surface 32b is Corresponds to the collector electrode.
  • the first electrode surface 32a, the second electrode surface 32b, and the control electrode are formed by using, for example, Cu, Al, Ni, or an alloy thereof.
  • the surfaces of the first electrode surface 32a, the second electrode surface 32b, and the control electrode are plated with Ni, Au, Ag, Sn, Pd, or an alloy thereof.
  • the first conductor plate 30 is arranged so as to face the first electrode surface 32a via the first joining material 31 in the vertical direction.
  • the second conductor plate 34 is arranged so as to face the second electrode surface 32b via the second joining member 33 in the vertical direction.
  • the first conductor plate 30 and the second conductor plate 34 sandwich the power semiconductor element 32 from both sides in the Z-axis direction.
  • Each of the first conductor plate 30 and the second conductor plate 34 is formed by using a material having conductivity and thermal conductivity.
  • Each of the first conductor plate 30 and the second conductor plate 34 is formed by using, for example, Cu or Cu alloy, Al or Al alloy, or the like. Note that FIG. 2 shows an example in which the first conductor plate 30 and the second conductor plate 34 are formed of a single member, but the first conductor plate 30 and the second conductor plate 34 have a plurality of members. It may be formed by joining.
  • An insulating member 44 composed of a resin insulating layer 42 and a metal foil 43 is laminated on the second conductor plate 34.
  • the insulating member 44 has thermal conductivity.
  • the first conductor plate 30, the second conductor plate 34, and the insulating member 44 are sealed with the sealing resin 6 in a state where the power semiconductor element 32 is sandwiched, and constitutes the power semiconductor module 101.
  • the sealing resin 6 is, for example, an epoxy resin or the like, and is molded by resin molding such as a transfer mold.
  • a first metal member 20, which is a heat conductive member, is provided between the insulating member 44 and the cooling member 45.
  • the power semiconductor module 101 is sandwiched between the metal plate 41 and the cooling member 45 via the first metal member 20 from both sides in the Z-axis direction.
  • the heat generated from the power semiconductor element 32 is transferred from the second electrode surface 32b side to the second conductor plate 34 via the second bonding material 33, and is transferred to the cooling member 45.
  • the insulating member 44 is a member that transfers heat generated from the power semiconductor element 32 to the cooling member 45, and is formed by using a material having high thermal conductivity and high dielectric strength.
  • the insulating member 44 may be a resin insulating layer 42 to which a metal foil 43 is adhered, ceramics such as Al2O3, AlN or Si3N4, or an insulating sheet containing fine powders thereof.
  • the first metal member 20 is preferably a metal in which the insulating member 44 and the cooling member 45 are in close contact with each other, that is, a metal having a low hardness, for example, a metal having a Young's modulus of 50 GPa or less.
  • a metal having a low hardness for example, a metal having a Young's modulus of 50 GPa or less.
  • an alloy of Sn, In, Zn, Sn, an alloy of In, and an alloy of Zn are suitable.
  • the power module 100 causes thermal expansion in each member starting from the heat generated by the power semiconductor element 32.
  • compressive stress is applied to the first metal member 20. If the compressive stress on the first metal member 20 is less than the yield stress, it is within the elastic region, and there is a gap between the first metal member 20 and the insulating member 44, or between the first metal member 20 and the cooling member 45. It does not occur and the heat dissipation of the power module 100 is maintained.
  • the compressive stress on the first metal member 20 reaches the yield stress, the first metal member 20 is plastically deformed to form the first metal member 20 and the insulating member 44, or the first metal member 20 and the cooling member 45.
  • Gap is likely to occur between the two.
  • the area in contact with the cooling member 45 is reduced, the contact thermal resistance is increased, and the heat dissipation is lowered. As a result, the reliability of the power module 100 is lowered.
  • the first metal member 20 has a second metal member 21 embedded in the first metal member 20.
  • the second metal member 21 is a metal material that is harder than the first metal member 20.
  • the term "harder than the first metal member 20" means that the index indicating various hardnesses such as Vickers hardness and Brinell hardness is larger than that of the first metal member 20. That is, it is preferable that the second metal member 21 has a hardness larger than that of the first metal member 20. Since the second metal member 21 is harder than the first metal member 20, the yield stress of the second metal member 21 is larger than that of the first metal member 20, and the second metal member 21 has the insulating member 44 and the cooling member 45. It becomes easier to regulate the gap between them.
  • the power module 100 can suppress the plastic deformation of the first metal member 20, and the reliability of the power module 100 can be ensured.
  • the term "harder than the first metal member 20" may mean that the Young's modulus of the material of the second metal member 21 is larger than the Young's modulus of the material of the first metal member 20.
  • the second metal member 21 has a point of forming an alloy layer together with the first metal member 20, a point of high wettability of the first metal member 20, and a point of being harder than the first metal member 20 and compared with other materials.
  • an alloy of Ni, Cu, Cu and an alloy of Ni are suitable as the material of the second metal member 21.
  • the material of the second metal member 21 is not necessarily limited to Ni, Cu, Cu alloys and Ni alloys.
  • the material of the second metal member 21 is a material having a melting point higher than the melting point of the first metal member 20, the rigidity does not decrease even when exposed to a high temperature, and the gap between the insulating member 44 and the cooling member 45 can be regulated. All you need is.
  • the thickness of the second metal member 21 is thinner than the thickness of the first metal member 20.
  • the second metal member 21 functions as a spacer that defines the vertical dimension between the insulating member 44 and the cooling member 45, and suppresses the first metal member 20 from reaching the yield stress due to the compressive stress. Plastic deformation can be reduced and the reliability of the power module 100 can be improved.
  • the thickness of the first metal member 20 is preferably within 30-200 ⁇ m.
  • the thickness of the first metal member 20 affects the heat dissipation and reliability of the power module 100. If the thickness of the first metal member 20 is too thick, the thermal resistance becomes large and the heat dissipation property deteriorates. On the other hand, if the thickness of the first metal member 20 is too thin, the unevenness of the contact surface between the insulating member 44 and the cooling member 45 causes cooling between the first metal member 20 and the insulating member 44, or between the first metal member 20 and the cooling member 20. There is a concern that a gap may occur between the members 45. For example, the surface of the insulating member 44 has a step of 40 ⁇ m due to unevenness.
  • the thickness of the first metal member 20 is preferably 40-200 ⁇ m, and even more preferably 70-170 ⁇ m.
  • the second metal member 21 preferably has a shape separated from each other. If they are not separated from each other, the second metal member 21 cannot follow the step in the insulating member 44 and the cooling member 45, and the first metal member 20 and the insulating member 44 or the first metal member 20 and the cooling member 20 cannot be cooled. There is a concern that a gap may occur between the members 45. Therefore, for the second metal member 21, for example, a plurality of particles are preferable, and the shape of the particles may be spherical, square dice, or any other shape. Further, a metal material obtained by cutting a wire may be used. That is, the second metal member 21 may be a metal material separated from each other.
  • the second metal member 21 when the metal forming the first metal member 20 and the metal contained in the second metal member 21 form an alloy layer, the first metal member 20 and the second metal member 21 are strong. It becomes difficult for a gap to occur when it is joined to.
  • the peeling becomes a starting point and the heat dissipation property is lowered. Further, if the peeling progresses, the reliability of the power module 100 is lowered. Therefore, if the material of the second metal member 21 is a material that forms an alloy layer together with the metal contained in the first metal member 20, the second metal member 21 is suitable because it is difficult to peel off. In this case, since the power module 100 can suppress the occurrence of peeling of the first metal member 20, the reliability of the power module 100 can be ensured.
  • a region M facing the region of the power semiconductor element 32 when viewed from the Z-axis direction orthogonal to the flat plate-shaped power semiconductor element 32, that is, the vertical direction is defined.
  • the second metal member 21 is provided in at least the region M in the first metal member 20.
  • the heat generated by the power semiconductor element 32 tends to increase the temperature in the region M, and each member tends to thermally expand. That is, when the second metal member 21 is not provided in the region M, when the first metal member 20 is plastically deformed by compressive stress, it is between the first metal member 20 and the insulating member 44, or the first metal.
  • the thermal resistance between the cooling member 45 and the cooling member 45 becomes remarkably large, and the reliability of the power module 100 is lowered.
  • the second metal member 21 may come into contact with the insulating member 44 or the cooling member 45.
  • the second metal member 21 regulates the gap between the insulating member 44 and the cooling member 45, and since the second metal member 21 is made of a metal material having high thermal conductivity, heat dissipation is improved and the second metal member 21 is generated from the power semiconductor element 32. The heat can be easily transferred to the cooling member 45.
  • the first metal member 20 tends to have a large contact thermal resistance because it is difficult to fill a minute gap in a contact portion with the insulating member 44 and the cooling member 45. Therefore, as shown in FIG. 4, the contact thermal resistance can be reduced by forming and joining the intermetallic compound layer 22 between the first metal member 20 and the cooling member 45. Further, the intermetallic compound layer 22 may be formed and joined between the first metal member 20 and the insulating member 44. When the intermetallic compound layer 22 is formed and joined between the first metal member 20 and the insulating member 44, and both the first metal member 20 and the cooling member 45, the first in the thermal cycle test and the power cycle test.
  • the metal member 20 is loaded with thermal stress due to thermal expansion of each constituent member, and when peeling occurs, the reliability of the power module 100 is lowered. Therefore, it is preferable that the first metal member 20 comes into contact with one of the insulating member 44 or the cooling member 45 in a state where surface pressure is applied.
  • the intermetallic compound layer 22 may be joined by heating and melting the first metal member 20, or may be joined by a method of vibration by ultrasonic waves, a laser, or pressure.
  • the cooling member 45 is Al coated with Ni plating and the first metal member 20 is the Sn main component
  • the intermetallic compound layer 22 is Ni3Sn, Ni3Sn2, Ni3Sn4, which are intermetallic compounds of Ni and Sn. Etc. are formed.
  • the power semiconductor module 101 When the power semiconductor module 101 is energized and heated, thermal expansion occurs in each component in the process of heat dissipation to the cooling member 45. This thermal expansion causes the power semiconductor module 101 to warp, which may apply compressive stress to the first metal member 20 to cause plastic deformation. Therefore, in order to suppress the plastic deformation of the first metal member 20, as shown in FIG. 4, the difference between the thickness T of the first metal member 20 and the thickness T'of the second metal member 21 is the power semiconductor module 101. It is preferable that the amount of warpage is smaller than ⁇ S. The warp amount ⁇ S of the power semiconductor module 101 will be described below.
  • the thickness of the second joining material 33 for joining the power semiconductor element 32 and the second conductor plate 34 is H1, the thickness of the second conductor plate 34 is H2, and the thickness of the resin insulating layer 42 constituting the insulating member 44 is set. H3, the thickness of the metal foil 43 constituting the insulating member 44 is defined as H4.
  • the coefficient of linear expansion of the second bonding material 33 is a1
  • the coefficient of linear expansion of the second conductor plate 34 is a2
  • the coefficient of linear expansion of the resin insulating layer 42 is a3
  • the coefficient of linear expansion of the metal foil 43 is a4.
  • the temperature difference between the temperature of the power semiconductor module 101 and the room temperature at the time of energization heating is defined as ⁇ T.
  • the difference TT'in thickness between the first metal member 20 and the second metal member 21 is smaller than the value of ⁇ S.
  • ⁇ S 125 ° C.
  • the value of ⁇ S 9.92 ⁇ m
  • the thicknesses T and T'of the first metal member 20 and the second metal member 21 so that T-T'is smaller than this. are set respectively.
  • ⁇ S H1 ⁇ a1 ⁇ ⁇ T + H2 ⁇ a2 ⁇ ⁇ T + H3 ⁇ a3 ⁇ ⁇ T + H4 ⁇ a4 ⁇ ⁇ T ...
  • FIG. 5 is a table showing an example of the warp amount ⁇ S of the power semiconductor module 101.
  • the warp amount ⁇ S 9.92 ⁇ m.
  • the second metal member 21 causes the power semiconductor module 101 to warp to the first metal member 20.
  • the compressive stress can be reduced.
  • the first metal member 20 in contact with the insulating member 44 may have a shape having a plurality of concave portions 20b and convex portions 20a.
  • a heat conductive member made of a metal material can reduce the contact thermal resistance and reduce the thermal resistance by increasing the surface pressure.
  • the surface pressure applied to the convex portion 20a when a constant load is applied is larger than that when the convex portion 20a is not formed. Therefore, if the convex portion 20a is provided on the first metal member 20, the contact thermal resistance of the first metal member 20 becomes smaller, and the heat dissipation of the power module 100 is improved.
  • 6 (A) to 6 (C) are diagrams showing the results of simulating the relationship between the area ratio of the convex portion 20a of the first metal member 20 and the thermal resistance.
  • 6 (A) and 6 (B) are graphs showing the calculation process of the simulation, and
  • FIG. 6 (C) is a graph showing the relationship between the area ratio of the convex portion 20a of the first metal member 20 and the thermal resistance.
  • FIG. 6A shows the measured values of the surface pressure P (MPa) and the thermal resistance R 1 (cm 2 K / W) of the sheet-shaped In, which is an example of the first metal member 20.
  • An approximate curve by the least squares method was created based on 10 actually measured values as the surface pressure P, and the following equation (2) was derived.
  • R 1 0.03P -2 + 0.012 ... (2)
  • R 1 indicates the thermal resistance of In
  • P indicates the surface pressure.
  • FIG. 6B is a table showing the rate of increase in thermal resistance.
  • the thermal resistance is expressed by the following equation (3).
  • R 2 t / (k ⁇ A) ⁇ ⁇ ⁇ (3)
  • R 2 represents thermal resistance
  • t represents the thickness in the heat transfer direction
  • k represents the heat transfer coefficient
  • A represents the area of heat transfer.
  • FIG. 6 (C) When a constant load is applied to the first metal member 20 using the formulas (2) and (3), the area ratio and thermal resistance of the convex portion 20a of the first metal member 20 are shown in FIG. 6 (C). The relationship with is shown in the graph.
  • the area ratio at which the normalized thermal resistance is 1 or less is in the region of 40% -100%, and the area ratio at which the normalized thermal resistance is greater than 1 is within the range of less than 40%. be.
  • the heat dissipation of the power module 100 can be improved.
  • it is desirable that the area ratio of the convex portion of the first metal member 20 is within the range of 40-100%.
  • FIG. 7 (A) to 7 (D) are views showing a manufacturing process of the power module 100.
  • the second metal member 21 is embedded in the first metal member 20.
  • the second metal member 21 is a metal material that is harder than the first metal member 20, and is a metal material that is separated from each other, for example, a plurality of particles.
  • the first metal member 20 is rolled and cut to a predetermined length.
  • the thickness of the first metal member 20 is processed to be about 1.5 times the thickness of the second metal member 21. do.
  • the first metal member 20 in which the second metal member 21 is embedded is placed on the cooling member 45, and the first metal member 20 is referred to as the cooling member 45.
  • the first metal member 20 is heated and melted to form an intermetallic compound layer 22 between the cooling member 45 and the first metal member 20 and joined to each other. You may. Further, the surface of the first metal member 20 which is provided with irregularities on the mold and comes into contact with the insulating member 44 is processed with the convex portions 20a and the concave portions 20b so that the area ratio of the convex portions 20a is 40% or more. May be good.
  • the thickness of the first metal member 20 is reduced by press working. Specifically, as described above, the difference in thickness between the first metal member 20 and the second metal member 21 is set to be smaller than the warp amount ⁇ S of the power semiconductor module 101. The thickness of the first metal member 20 is made thicker than that of the second metal member 21.
  • the power semiconductor module 101 (not shown) having the insulating member 44 is brought into close contact with the first metal member 20.
  • the single-sided cooling type power module 100 has been described as an example. However, it can be similarly applied to the double-sided cooling type power module 100'.
  • FIG. 8 is a cross-sectional view of a double-sided cooling type power module 100'.
  • the same parts as those of the power module 100 shown in FIG. 2 are designated by the same reference numerals, and the description thereof will be omitted.
  • an insulating member 44' made of a resin insulating layer 42'and a metal foil 43' is laminated on the first conductor plate 30. Further, the first metal member 20'is laminated on the insulating member 44'.
  • the first metal member 20' has a second metal member 21' embedded in the first metal member 20', and the second metal member 21'is a metal material harder than the first metal member 20'. , The thickness is thinner than the thickness of the first metal member 20'.
  • the first metal member 20'and the second metal member 21' are the same as the first metal member 20 and the second metal member 21 already described, and the description thereof will be omitted.
  • a cooling member 45' is joined on the first metal member 20'.
  • the second metal members 21 and 21 which are harder than the first metal members 20 and 20' By burying ‘ It is possible to suppress deformation.
  • the power modules 100 and 100' are the power semiconductor element 32, the conductor plates 30 and 34 electrically connected to the power semiconductor element 32, and the insulating members 44 and 44' laminated on the conductor plates 30 and 34.
  • a power semiconductor module 101 including the above, cooling members 45, 45'arranged and thermally connected to face the heat dissipation surface of the power semiconductor module 101, and insulating members 44, 44'and cooling members 45, 45.
  • the first metal members 20 and 20' are arranged between the first metal members 20 and 20', and the first metal members 20 and 20'are the second metal members 21 and 20'embedded in the first metal members 20 and 20'.
  • the second metal member 21, 21' has 21', and the second metal member 21, 21'is a metal material harder than the first metal member 20, 20', and has a thickness thinner than the thickness of the first metal member 20, 20'. As a result, it is possible to suppress plastic deformation of the metal that transfers heat to the cooling member and improve the reliability of heat dissipation.
  • the method for manufacturing the power modules 100, 100' is a power semiconductor element 32, a conductor plates 30 and 34 electrically connected to the power semiconductor element 32, and an insulating member 44 laminated on the conductor plates 30 and 34. , 44', cooling members 45, 45'arranged and thermally connected to face the heat dissipation surface of the power semiconductor module 101, and insulating members 44, 44'and cooling members.
  • the first step of burying the second metal members 21 and 21'made of a metal material harder than the members 20 and 20'and the first metal members 20 and 20' in which the second metal members 21 and 21'are embedded are cooling members.
  • the power semiconductor module 101 is brought into close contact with the first metal members 20 and 20'in the second step of joining with 45 and 45'and the third step of thinning the thickness of the first metal members 20 and 20'by pressing.
  • a fourth step is provided. As a result, it is possible to suppress plastic deformation of the metal that transfers heat to the cooling member and improve the reliability of heat dissipation.
  • the present invention is not limited to the above-described embodiment, and other embodiments considered within the scope of the technical idea of the present invention are also included within the scope of the present invention as long as the features of the present invention are not impaired. .. Further, the configuration may be a combination of the above-described embodiments.

Abstract

Provided is a power module comprising: a power semiconductor module which is provided with a power semiconductor element, a conductive plate that is electrically connected to the power semiconductor element, and an insulating member that is laminated onto the conductive plate; a cooling member which is disposed so as to face a heat dissipating surface of the power semiconductor module and is in thermal contact therewith; and a first metal member which is disposed between the insulating member and the cooling member, wherein the first metal member has a second metal member that is embedded in the first metal member, and the second metal member is made of a metal material harder than that of the first metal member and is thinner than the first metal member.

Description

パワーモジュール、およびパワーモジュールの製造方法Power module and manufacturing method of power module
　本発明は、パワーモジュール、およびパワーモジュールの製造方法に関する。 The present invention relates to a power module and a method for manufacturing the power module.
　パワー半導体素子のスイッチング動作により電力変換を行うパワーモジュールは、変換効率が高いため、民生用、車載用、鉄道用、変電設備等に幅広く利用されている。このパワー半導体素子はスイッチング動作により発熱を繰り返すため、パワーモジュールの放熱性に高い信頼性が求められる。例えば、車載用においては、小型化、軽量化の要求に応じてより高い信頼性が求められている。 Power modules that convert power by switching power semiconductor elements are widely used for consumer, in-vehicle, railway, substation equipment, etc. because of their high conversion efficiency. Since this power semiconductor element repeatedly generates heat due to switching operation, high reliability is required for the heat dissipation of the power module. For example, in the case of in-vehicle use, higher reliability is required in response to the demand for miniaturization and weight reduction.
　特許文献１には、パワーデバイスから発せられる熱が、回路板、電気絶縁板および応力緩和板を経て冷却器に伝えられ、冷却流体通路内を流れる冷却流体に放熱されることが開示され、応力緩和板は、熱伝導性に優れたアルミニウム、銅などの金属により形成されることが開示されている。 Patent Document 1 discloses that heat generated from a power device is transferred to a cooler via a circuit plate, an electrically insulating plate, and a stress relaxation plate, and is dissipated to a cooling fluid flowing in a cooling fluid passage. It is disclosed that the relaxation plate is made of a metal such as aluminum and copper having excellent thermal conductivity.
特開２０１３－３８１２３号公報Japanese Unexamined Patent Publication No. 2013-38123
　特許文献１では、冷却部材に熱を伝える金属に圧縮応力により塑性変形が発生すると、冷却部材との間に隙間が発生し、接触熱抵抗が増加して、放熱性が低下する課題がある。 In Patent Document 1, when plastic deformation occurs in the metal that transfers heat to the cooling member due to compressive stress, a gap is generated between the metal and the cooling member, the contact thermal resistance increases, and the heat dissipation is lowered.
　本発明によるパワーモジュールは、パワー半導体素子と、前記パワー半導体素子と電気的に接続される導体板と、前記導体板に積層される絶縁部材とを備えるパワー半導体モジュールと、前記パワー半導体モジュールの放熱面と対向して配置されるとともに熱的に接続される冷却部材と、前記絶縁部材と前記冷却部材との間に配置される第１金属部材と、を備え、前記第１金属部材は、前記第１金属部材内に埋設される第２金属部材を有し、前記第２金属部材は、前記第１金属部材よりも硬い金属材料であり、前記第１金属部材の厚さより薄い厚さである。
　本発明によるパワーモジュールの製造方法は、パワー半導体素子と、前記パワー半導体素子と電気的に接続される導体板と、前記導体板に積層される絶縁部材とを備えるパワー半導体モジュールと、前記パワー半導体モジュールの放熱面と対向して配置されるとともに熱的に接続される冷却部材と、前記絶縁部材と前記冷却部材との間に配置される第１金属部材と、を備えたパワーモジュールの製造方法であって、前記第１金属部材内に前記第１金属部材よりも硬い金属材料よりなる第２金属部材を埋設する第１工程と、前記第２金属部材を埋設した第１金属部材を冷却部材と接合する第２工程と、前記第１金属部材の厚さをプレス加工により薄くする第３工程と、前記第１金属部材に前記パワー半導体モジュールを密着する第４工程と、を備える。 The power module according to the present invention includes a power semiconductor element, a power semiconductor module including a conductor plate electrically connected to the power semiconductor element, and an insulating member laminated on the conductor plate, and heat dissipation of the power semiconductor module. A cooling member arranged facing the surface and thermally connected to the surface and a first metal member arranged between the insulating member and the cooling member are provided, and the first metal member is said to have the same metal member. It has a second metal member embedded in the first metal member, and the second metal member is a metal material harder than the first metal member and thinner than the thickness of the first metal member. ..
The method for manufacturing a power module according to the present invention includes a power semiconductor element, a power semiconductor module including a conductor plate electrically connected to the power semiconductor element, and an insulating member laminated on the conductor plate, and the power semiconductor. A method for manufacturing a power module including a cooling member arranged facing the heat radiation surface of the module and thermally connected to the insulating member, and a first metal member arranged between the insulating member and the cooling member. The first step of burying the second metal member made of a metal material harder than the first metal member in the first metal member and the cooling member of the first metal member in which the second metal member is embedded. It is provided with a second step of joining with the first metal member, a third step of reducing the thickness of the first metal member by press processing, and a fourth step of bringing the power semiconductor module into close contact with the first metal member.
　本発明によれば、冷却部材に熱を伝える金属の塑性変形を抑制し、放熱の信頼性を向上させることができる。 According to the present invention, it is possible to suppress the plastic deformation of the metal that transfers heat to the cooling member and improve the reliability of heat dissipation.
パワーモジュールの外観を示す図である。It is a figure which shows the appearance of a power module. パワーモジュールの断面図である。It is sectional drawing of a power module. パワーモジュールの要部の拡大断面図である。It is an enlarged sectional view of the main part of a power module. パワーモジュールの要部の拡大断面図である。It is an enlarged sectional view of the main part of a power module. パワー半導体モジュールの反り量の例を示す表である。It is a table which shows the example of the warpage amount of a power semiconductor module. （Ａ）～（Ｃ）第１金属部材の凸部の面積率と熱抵抗との関係をシミュレーションした結果を示す図である。(A)-(C) It is a figure which shows the result of simulating the relationship between the area ratio of the convex portion of the 1st metal member, and thermal resistance. （Ａ）～（Ｄ）パワーモジュールの製造工程を示す図である。(A)-(D) It is a figure which shows the manufacturing process of a power module. 両面冷却型のパワーモジュールの断面図である。It is sectional drawing of the power module of a double-sided cooling type.
　以下、図面を参照して本発明の実施形態を説明する。以下の記載および図面は、本発明を説明するための例示であって、説明の明確化のため、適宜、省略および簡略化がなされている。本発明は、他の種々の形態でも実施する事が可能である。特に限定しない限り、各構成要素は単数でも複数でも構わない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following description and drawings are examples for explaining the present invention, and are appropriately omitted and simplified for the sake of clarification of the description. The present invention can also be implemented in various other forms. Unless otherwise specified, each component may be singular or plural.
　図面において示す各構成要素の位置、大きさ、形状、範囲などは、発明の理解を容易にするため、実際の位置、大きさ、形状、範囲などを表していない場合がある。このため、本発明は、必ずしも、図面に開示された位置、大きさ、形状、範囲などに限定されない。 The position, size, shape, range, etc. of each component shown in the drawings may not represent the actual position, size, shape, range, etc. in order to facilitate understanding of the invention. Therefore, the present invention is not necessarily limited to the position, size, shape, range and the like disclosed in the drawings.
　以下、本発明の実施形態について図面を参照して説明する。なお、各実施形態において同一の符号を付された構成は、特に言及しない限り、各実施形態において同様の機能を有するため、その説明を省略する。また、必要な図面には、各部の位置の説明を明確にするために、Ｘ軸、Ｙ軸及びＺ軸から成る直交座標軸を記載している。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The configurations with the same reference numerals in each embodiment have the same functions in each embodiment unless otherwise specified, and thus the description thereof will be omitted. Further, in the necessary drawings, a Cartesian coordinate axis including an X-axis, a Y-axis, and a Z-axis is described in order to clarify the explanation of the position of each part.
　本実施形態では、平板状のパワー半導体素子に直交するＺ軸方向を、「縦方向」とも称する。本実施形態では、平板状のパワー半導体素子に沿ったＸ軸方向を「横方向」とも称する。 In the present embodiment, the Z-axis direction orthogonal to the flat plate-shaped power semiconductor element is also referred to as "vertical direction". In the present embodiment, the X-axis direction along the flat plate-shaped power semiconductor element is also referred to as "horizontal direction".
　図１は、本実施形態に係るパワーモジュール１００の外観を示す図である。
　パワーモジュール１００は、一面に冷却部材４５が配置されている。冷却部材４５は、パワー半導体モジュール１０１に後述の第１金属部材２０を介して当接している。パワー半導体モジュール１０１は、後述のパワー半導体素子３２等の各構成要素を、封止樹脂６により封止されている。そして、冷却部材４５の中に冷媒を流通することによりパワー半導体モジュール１０１を冷却する。冷媒には、水や水にエチレングリコールを混入した不凍液等を用いる。冷却部材４５は、菅状の冷却部材４５でもよいし、ピン状のフィンを用いてもよい。 FIG. 1 is a diagram showing the appearance of the power module 100 according to the present embodiment.
The cooling member 45 is arranged on one surface of the power module 100. The cooling member 45 is in contact with the power semiconductor module 101 via a first metal member 20, which will be described later. In the power semiconductor module 101, each component such as the power semiconductor element 32 described later is sealed with a sealing resin 6. Then, the power semiconductor module 101 is cooled by circulating the refrigerant in the cooling member 45. As the refrigerant, water or an antifreeze solution in which ethylene glycol is mixed with water is used. The cooling member 45 may be a tube-shaped cooling member 45 or may use pin-shaped fins.
　冷却部材４５は、伝導性を有する材料を用いて形成される。冷却部材４５は、例えば、Ｃｕ、Ｃｕ合金、Ｃｕ－Ｃ、Ｃｕ－ＣｕＯ又はこれらの複合材、或いは、Ａｌ、Ａｌ合金、ＡｌＳｉＣ、Ａｌ－Ｃ又はこれらの複合材等を用いて形成される。 The cooling member 45 is formed by using a material having conductivity. The cooling member 45 is formed by using, for example, Cu, Cu alloy, Cu—C, Cu—CuO or a composite material thereof, or Al, Al alloy, AlSiC, Al—C or a composite material thereof.
　パワーモジュール１００は、直流正極端子５２、直流負極端子５３、交流出力端子５４及び制御端子５５が、パワーモジュール１００から外部へ向かって突出するように伸びている。なお、図１では、直流正極端子５２及び直流負極端子５３が交流出力端子５４及び制御端子５５と、互いに対抗したパワーモジュール１００の例を示したが、各端子の突出方向が１方向のパワーモジュール１００であってもよい。 In the power module 100, the DC positive electrode terminal 52, the DC negative electrode terminal 53, the AC output terminal 54, and the control terminal 55 extend so as to project outward from the power module 100. Note that FIG. 1 shows an example of a power module 100 in which the DC positive electrode terminal 52 and the DC negative electrode terminal 53 oppose each other with the AC output terminal 54 and the control terminal 55. It may be 100.
　図２は、図１に示すＡ－Ａ’線でパワーモジュール１００を切断した断面図である。図３は、図２に示すパワーモジュール１００の要部Ｂの拡大断面図であり、図４は、図２に示すパワーモジュール１００の要部Ｃの拡大断面図である。 FIG. 2 is a cross-sectional view of the power module 100 cut along the AA'line shown in FIG. FIG. 3 is an enlarged cross-sectional view of the main part B of the power module 100 shown in FIG. 2, and FIG. 4 is an enlarged cross-sectional view of the main part C of the power module 100 shown in FIG.
　パワーモジュール１００は、パワー半導体素子３２を備える。パワー半導体素子３２は、ＩＧＢＴ（insulated gate bipolar transistor）、ＩＥＧＴ（injection enhanced gate transistor）又はＭＯＳＦＥＴ（metal-oxide-semiconductor field-effect transistor）等のトランジスタが形成された半導体、或いは、ダイオードが形成された半導体により構成される。図２では、パワー半導体素子３２の一例として、トランジスタが形成された半導体を示している。パワー半導体素子３２は、スイッチング素子として機能する。 The power module 100 includes a power semiconductor element 32. The power semiconductor element 32 is a semiconductor in which a transistor such as an IGBT (insulated gate bipolar transistor), an IEGT (injection enhanced gate transistor) or a MOSFET (metal-oxide-semiconductor field-effect transistor) is formed, or a diode is formed. It is composed of semiconductors. FIG. 2 shows a semiconductor in which a transistor is formed as an example of a power semiconductor device 32. The power semiconductor element 32 functions as a switching element.
　図２に示すように、パワー半導体素子３２が、例えばＩＧＢＴ等のトランジスタが形成された半導体である場合、パワー半導体素子３２の第１電極面３２ａはエミッタ電極に相当し、第２電極面３２ｂはコレクタ電極に相当する。この場合、第１電極面３２ａ、第２電極面３２ｂ及び図示省略した制御電極は、例えば、Ｃｕ、Ａｌ、Ｎｉ又はこれらの合金等を用いて形成される。第１電極面３２ａ、第２電極面３２ｂ及び制御電極の表面には、Ｎｉ、Ａｕ、Ａｇ、Ｓｎ、Ｐｄ又はこれらの合金等の鍍金が施されている。 As shown in FIG. 2, when the power semiconductor element 32 is a semiconductor in which a transistor such as an IGBT is formed, the first electrode surface 32a of the power semiconductor element 32 corresponds to an emitter electrode, and the second electrode surface 32b is Corresponds to the collector electrode. In this case, the first electrode surface 32a, the second electrode surface 32b, and the control electrode (not shown) are formed by using, for example, Cu, Al, Ni, or an alloy thereof. The surfaces of the first electrode surface 32a, the second electrode surface 32b, and the control electrode are plated with Ni, Au, Ag, Sn, Pd, or an alloy thereof.
　第１導体板３０は、縦方向において第１接合材３１を介して第１電極面３２ａに対向して配置される。第２導体板３４は、縦方向において第２接合材３３を介して第２電極面３２ｂに対向して配置される。第１導体板３０及び第２導体板３４は、Ｚ軸方向の両面からパワー半導体素子３２を挟持する。 The first conductor plate 30 is arranged so as to face the first electrode surface 32a via the first joining material 31 in the vertical direction. The second conductor plate 34 is arranged so as to face the second electrode surface 32b via the second joining member 33 in the vertical direction. The first conductor plate 30 and the second conductor plate 34 sandwich the power semiconductor element 32 from both sides in the Z-axis direction.
　第１導体板３０及び第２導体板３４のそれぞれは、導電性及び熱伝導性を有する材料を用いて形成される。第１導体板３０及び第２導体板３４のそれぞれは、例えば、Ｃｕ若しくはＣｕ合金、又は、Ａｌ若しくはＡｌ合金等を用いて形成される。なお、図２では、第１導体板３０及び第２導体板３４が単一の部材で形成された例を示しているが、第１導体板３０及び第２導体板３４は、複数の部材を接合して形成されていてもよい。 Each of the first conductor plate 30 and the second conductor plate 34 is formed by using a material having conductivity and thermal conductivity. Each of the first conductor plate 30 and the second conductor plate 34 is formed by using, for example, Cu or Cu alloy, Al or Al alloy, or the like. Note that FIG. 2 shows an example in which the first conductor plate 30 and the second conductor plate 34 are formed of a single member, but the first conductor plate 30 and the second conductor plate 34 have a plurality of members. It may be formed by joining.
　第２導体板３４には、樹脂絶縁層４２および金属箔４３により構成される絶縁部材４４が積層される。絶縁部材４４は熱伝導性を有する。第１導体板３０、第２導体板３４および絶縁部材４４は、パワー半導体素子３２を挟持した状態において、封止樹脂６によって封止され、パワー半導体モジュール１０１を構成する。封止樹脂６は、例えば、エポキシ樹脂等であり、トランスファーモールド等の樹脂成型によって成形される。絶縁部材４４と冷却部材４５との間には、熱伝導部材である第１金属部材２０が設けられている。金属板４１と第１金属部材２０を介した冷却部材４５とは、Ｚ軸方向の両面からパワー半導体モジュール１０１を挟持する。 An insulating member 44 composed of a resin insulating layer 42 and a metal foil 43 is laminated on the second conductor plate 34. The insulating member 44 has thermal conductivity. The first conductor plate 30, the second conductor plate 34, and the insulating member 44 are sealed with the sealing resin 6 in a state where the power semiconductor element 32 is sandwiched, and constitutes the power semiconductor module 101. The sealing resin 6 is, for example, an epoxy resin or the like, and is molded by resin molding such as a transfer mold. A first metal member 20, which is a heat conductive member, is provided between the insulating member 44 and the cooling member 45. The power semiconductor module 101 is sandwiched between the metal plate 41 and the cooling member 45 via the first metal member 20 from both sides in the Z-axis direction.
　パワー半導体素子３２から発生した熱は、第２電極面３２ｂ側から、第２接合材３３を介して、第２導体板３４に伝達され、冷却部材４５に伝達される。
　絶縁部材４４は、パワー半導体素子３２から発生した熱を冷却部材４５に伝達する部材であり、熱伝導率が高く、かつ、絶縁耐圧が大きい材料を用いて形成される。絶縁部材４４は、金属箔４３が接着された樹脂絶縁層４２でもよく、Ａｌ２Ｏ３、ＡｌＮ若しくはＳｉ３Ｎ４等のセラミクス、又は、これらの微粉末を含有する絶縁シートでもよい。 The heat generated from the power semiconductor element 32 is transferred from the second electrode surface 32b side to the second conductor plate 34 via the second bonding material 33, and is transferred to the cooling member 45.
The insulating member 44 is a member that transfers heat generated from the power semiconductor element 32 to the cooling member 45, and is formed by using a material having high thermal conductivity and high dielectric strength. The insulating member 44 may be a resin insulating layer 42 to which a metal foil 43 is adhered, ceramics such as Al2O3, AlN or Si3N4, or an insulating sheet containing fine powders thereof.
　第１金属部材２０は、絶縁部材４４と冷却部材４５とを密着する金属、即ち硬度が低い金属、例えばヤング率50GPa以下の金属が好ましい。第１金属部材２０の材料は、例えば、Sn、In、Zn、Snの合金、Inの合金、Znの合金が好適である。 The first metal member 20 is preferably a metal in which the insulating member 44 and the cooling member 45 are in close contact with each other, that is, a metal having a low hardness, for example, a metal having a Young's modulus of 50 GPa or less. As the material of the first metal member 20, for example, an alloy of Sn, In, Zn, Sn, an alloy of In, and an alloy of Zn are suitable.
　パワーモジュール１００は、パワーサイクル試験や温度サイクル試験において、パワー半導体素子３２の発熱を起点として各部材に熱膨張が生じる。それにより、第１金属部材２０には圧縮応力が負荷される。第１金属部材２０への圧縮応力が降伏応力未満であれば弾性領域内であり、第１金属部材２０と絶縁部材４４の間、又は第1金属部材２０と冷却部材４５の間には隙間が発生せず、パワーモジュール１００の放熱性が維持される。一方で、第１金属部材２０への圧縮応力が降伏応力に達すると、第１金属部材２０が塑性変形し、第１金属部材２０と絶縁部材４４、または第１金属部材２０と冷却部材４５との間に隙間が発生し易い。隙間が発生すると、冷却部材４５と接触する面積が減少し、接触熱抵抗が大きくなり、放熱性が低下する。それによりパワーモジュール１００では、信頼性が低下する。 In the power cycle test and the temperature cycle test, the power module 100 causes thermal expansion in each member starting from the heat generated by the power semiconductor element 32. As a result, compressive stress is applied to the first metal member 20. If the compressive stress on the first metal member 20 is less than the yield stress, it is within the elastic region, and there is a gap between the first metal member 20 and the insulating member 44, or between the first metal member 20 and the cooling member 45. It does not occur and the heat dissipation of the power module 100 is maintained. On the other hand, when the compressive stress on the first metal member 20 reaches the yield stress, the first metal member 20 is plastically deformed to form the first metal member 20 and the insulating member 44, or the first metal member 20 and the cooling member 45. Gap is likely to occur between the two. When a gap is generated, the area in contact with the cooling member 45 is reduced, the contact thermal resistance is increased, and the heat dissipation is lowered. As a result, the reliability of the power module 100 is lowered.
　本実施形態に係るパワーモジュール１００では、図３に示すように、第１金属部材２０は、第１金属部材２０内に埋設される第２金属部材２１を有する。第２金属部材２１は第１金属部材２０より硬い金属材料である。第１金属部材２０よりも硬いとは、ビッカース硬さやブリネル硬さ等の各種の硬さを示す指標が、第１金属部材２０よりも大きいことを示すという意味である。すなわち、第２金属部材２１は、第１金属部材２０よりも大きい硬さを有すると好適である。第２金属部材２１が第１金属部材２０よりも硬いことにより、第２金属部材２１の降伏応力は第１金属部材２０よりも大きくなり、第２金属部材２１が絶縁部材４４と冷却部材４５との間の隙間を規制しやすくなる。よってパワーモジュール１００は、第１金属部材２０の塑性変形を抑制でき、パワーモジュール１００の信頼性を確保することができる。なお、第１金属部材２０よりも硬いとは、第２金属部材２１の材料のヤング率が、第１金属部材２０の材料のヤング率より大きいという意味であってもよい。 In the power module 100 according to the present embodiment, as shown in FIG. 3, the first metal member 20 has a second metal member 21 embedded in the first metal member 20. The second metal member 21 is a metal material that is harder than the first metal member 20. The term "harder than the first metal member 20" means that the index indicating various hardnesses such as Vickers hardness and Brinell hardness is larger than that of the first metal member 20. That is, it is preferable that the second metal member 21 has a hardness larger than that of the first metal member 20. Since the second metal member 21 is harder than the first metal member 20, the yield stress of the second metal member 21 is larger than that of the first metal member 20, and the second metal member 21 has the insulating member 44 and the cooling member 45. It becomes easier to regulate the gap between them. Therefore, the power module 100 can suppress the plastic deformation of the first metal member 20, and the reliability of the power module 100 can be ensured. Note that the term "harder than the first metal member 20" may mean that the Young's modulus of the material of the second metal member 21 is larger than the Young's modulus of the material of the first metal member 20.
　第２金属部材２１は、第１金属部材２０と一緒に合金層を形成する点、第１金属部材２０の濡れ性が高い点、及び、第１金属部材２０よりも硬い、他の材料に比べて熱伝導率が高い点を鑑みると、第２金属部材２１の材料は、例えば、Ni、Cu、Cuの合金及びNiの合金が好適である。但し、第２金属部材２１の材料は、必ずしもNi、Cu、Cuの合金及びNiの合金に限定されるものではない。第２金属部材２１の材料は、第１金属部材２０の融点より高い融点を有し、高温に曝されても剛性が低下せず、絶縁部材４４と冷却部材４５との隙間を規制できる材料であればよい。 The second metal member 21 has a point of forming an alloy layer together with the first metal member 20, a point of high wettability of the first metal member 20, and a point of being harder than the first metal member 20 and compared with other materials. In view of the high thermal conductivity, for example, an alloy of Ni, Cu, Cu and an alloy of Ni are suitable as the material of the second metal member 21. However, the material of the second metal member 21 is not necessarily limited to Ni, Cu, Cu alloys and Ni alloys. The material of the second metal member 21 is a material having a melting point higher than the melting point of the first metal member 20, the rigidity does not decrease even when exposed to a high temperature, and the gap between the insulating member 44 and the cooling member 45 can be regulated. All you need is.
　また、第２金属部材２１は、第１金属部材２０の厚さより薄い厚さである。これにより、第２金属部材２１は、絶縁部材４４と冷却部材４５との間の縦方向寸法を規定するスペーサとして機能し、第１金属部材２０が圧縮応力により降伏応力に至ることを抑制し、塑性変形を低減でき、パワーモジュール１００の信頼性を向上させることができる。 Further, the thickness of the second metal member 21 is thinner than the thickness of the first metal member 20. As a result, the second metal member 21 functions as a spacer that defines the vertical dimension between the insulating member 44 and the cooling member 45, and suppresses the first metal member 20 from reaching the yield stress due to the compressive stress. Plastic deformation can be reduced and the reliability of the power module 100 can be improved.
　第１金属部材２０の厚さは３０－２００μm以内が好ましい。第１金属部材２０の厚さは、パワーモジュール１００の放熱性や信頼性に影響を与える。第１金属部材２０の厚さが厚すぎると熱抵抗が大きくなり、放熱性が低下してしまう。一方で、第１金属部材２０の厚さが薄すぎると、絶縁部材４４及び冷却部材４５との接触面の凹凸によって第１金属部材２０と絶縁部材４４の間、又は第１金属部材２０と冷却部材４５の間には隙間が発生する懸念がある。例えば、絶縁部材４４の表面は凹凸によって４０μmの段差を有する。
よって第１金属部材２０の厚さは４０-２００μmが好ましく、７０-１７０μmであればなおよい。第２金属部材２１は、互いに分離した形状が好ましい。互いに分離されていないと、絶縁部材４４及び冷却部材４５における段差に第２金属部材２１が追従することができず、第１金属部材２０と絶縁部材４４の間、又は第１金属部材２０と冷却部材４５の間には隙間が発生する懸念がある。よって、第２金属部材２１は、例えば複数の粒子が好ましく、粒子の形状は球状でも四角いサイコロ状でもその他の形状であってもよい。また、線材を切断した金属材料でもよい。すなわち、第２金属部材２１は、互いに分離した金属材料であればよい。 The thickness of the first metal member 20 is preferably within 30-200 μm. The thickness of the first metal member 20 affects the heat dissipation and reliability of the power module 100. If the thickness of the first metal member 20 is too thick, the thermal resistance becomes large and the heat dissipation property deteriorates. On the other hand, if the thickness of the first metal member 20 is too thin, the unevenness of the contact surface between the insulating member 44 and the cooling member 45 causes cooling between the first metal member 20 and the insulating member 44, or between the first metal member 20 and the cooling member 20. There is a concern that a gap may occur between the members 45. For example, the surface of the insulating member 44 has a step of 40 μm due to unevenness.
Therefore, the thickness of the first metal member 20 is preferably 40-200 μm, and even more preferably 70-170 μm. The second metal member 21 preferably has a shape separated from each other. If they are not separated from each other, the second metal member 21 cannot follow the step in the insulating member 44 and the cooling member 45, and the first metal member 20 and the insulating member 44 or the first metal member 20 and the cooling member 20 cannot be cooled. There is a concern that a gap may occur between the members 45. Therefore, for the second metal member 21, for example, a plurality of particles are preferable, and the shape of the particles may be spherical, square dice, or any other shape. Further, a metal material obtained by cutting a wire may be used. That is, the second metal member 21 may be a metal material separated from each other.
　また、第２金属部材２１は、第１金属部材２０を形成する金属と第２金属部材２１に含まれる金属とが合金層を形成する場合、第１金属部材２０と第２金属部材２１は強固に接合して隙間が発生し難くなる。第２金属部材２１が第１金属部材２０から剥離すると、剥離が起点となり、放熱性が低下する。また、剥離が進展した場合は、パワーモジュール１００の信頼性が低下する。よって、第２金属部材２１の材料は、第１金属部材２０に含まれる金属と一緒に合金層を形成する材料であれば、第２金属部材２１が剥離し難くなるため好適である。この場合、パワーモジュール１００は、第１金属部材２０の剥離の発生を抑制することができるため、パワーモジュール１００の信頼性を確保することができる。 Further, in the second metal member 21, when the metal forming the first metal member 20 and the metal contained in the second metal member 21 form an alloy layer, the first metal member 20 and the second metal member 21 are strong. It becomes difficult for a gap to occur when it is joined to. When the second metal member 21 is peeled from the first metal member 20, the peeling becomes a starting point and the heat dissipation property is lowered. Further, if the peeling progresses, the reliability of the power module 100 is lowered. Therefore, if the material of the second metal member 21 is a material that forms an alloy layer together with the metal contained in the first metal member 20, the second metal member 21 is suitable because it is difficult to peel off. In this case, since the power module 100 can suppress the occurrence of peeling of the first metal member 20, the reliability of the power module 100 can be ensured.
　図３に示すように、平板状のパワー半導体素子３２に直交するＺ軸方向、すなわち、縦方向から視て、パワー半導体素子３２の領域に対向する領域Ｍを定める。第２金属部材２１は、第１金属部材２０内の少なくとも領域Ｍに設けられる。パワー半導体素子３２の発熱は、領域Ｍの温度が上昇しやすく、各部材が熱膨張し易い。すなわち、第２金属部材２１が領域Ｍに設けられていない場合には、第１金属部材２０が圧縮応力により塑性変形した場合、第１金属部材２０と絶縁部材４４との間、又は第1金属部材２０と冷却部材４５との間に隙間が発生すると、冷却部材４５と熱抵抗が著しく大きくなり、パワーモジュール１００の信頼性が低下する。 As shown in FIG. 3, a region M facing the region of the power semiconductor element 32 when viewed from the Z-axis direction orthogonal to the flat plate-shaped power semiconductor element 32, that is, the vertical direction is defined. The second metal member 21 is provided in at least the region M in the first metal member 20. The heat generated by the power semiconductor element 32 tends to increase the temperature in the region M, and each member tends to thermally expand. That is, when the second metal member 21 is not provided in the region M, when the first metal member 20 is plastically deformed by compressive stress, it is between the first metal member 20 and the insulating member 44, or the first metal. When a gap is generated between the member 20 and the cooling member 45, the thermal resistance between the cooling member 45 and the cooling member 45 becomes remarkably large, and the reliability of the power module 100 is lowered.
　第２金属部材２１は、絶縁部材４４、又は冷却部材４５と当接してもよい。第２金属部材２１は、絶縁部材４４と冷却部材４５の隙間を規制し、第２金属部材２１が熱伝導率の高い金属材料であることで放熱性が向上し、パワー半導体素子３２から発生する熱を冷却部材４５に伝え易くすることができる。 The second metal member 21 may come into contact with the insulating member 44 or the cooling member 45. The second metal member 21 regulates the gap between the insulating member 44 and the cooling member 45, and since the second metal member 21 is made of a metal material having high thermal conductivity, heat dissipation is improved and the second metal member 21 is generated from the power semiconductor element 32. The heat can be easily transferred to the cooling member 45.
　第１金属部材２０は、グリースなどの液状の熱伝導部材と比較すると、絶縁部材４４や冷却部材４５との接触部における微小な隙間を満たしにくいため接触熱抵抗が大きい傾向にある。ゆえに、図４に示すように、第１金属部材２０と冷却部材４５との間には金属間化合物層２２を形成して接合することで、接触熱抵抗を低減することができる。また、第１金属部材２０と絶縁部材４４との間に金属間化合物層２２を形成して接合してもよい。なお、第１金属部材２０と絶縁部材４４との間、および第１金属部材２０と冷却部材４５との両方とも金属間化合物層２２を形成して接合すると、熱サイクル試験及びパワーサイクル試験において第１金属部材２０は各構成部材の熱膨張による熱応力が負荷され、剥離が発生するとパワーモジュール１００の信頼性が低下する。このため、第１金属部材２０は絶縁部材４４または冷却部材４５の一方と面圧が印加された状態で接触することが好ましい。なお、金属間化合物層２２は、第１金属部材２０を加熱溶融で接合させてもよいし、超音波による振動、レーザ、圧力による手法で接合させてもよい。例えば、冷却部材４５がNiめっきで被覆されたAlであり、第１金属部材２０がSn主成分であれば、金属間化合物層２２は、NiとSnの金属間化合物であるNi3Sn、Ni3Sn2、Ni3Sn4等が形成される。 Compared with a liquid heat conductive member such as grease, the first metal member 20 tends to have a large contact thermal resistance because it is difficult to fill a minute gap in a contact portion with the insulating member 44 and the cooling member 45. Therefore, as shown in FIG. 4, the contact thermal resistance can be reduced by forming and joining the intermetallic compound layer 22 between the first metal member 20 and the cooling member 45. Further, the intermetallic compound layer 22 may be formed and joined between the first metal member 20 and the insulating member 44. When the intermetallic compound layer 22 is formed and joined between the first metal member 20 and the insulating member 44, and both the first metal member 20 and the cooling member 45, the first in the thermal cycle test and the power cycle test. 1 The metal member 20 is loaded with thermal stress due to thermal expansion of each constituent member, and when peeling occurs, the reliability of the power module 100 is lowered. Therefore, it is preferable that the first metal member 20 comes into contact with one of the insulating member 44 or the cooling member 45 in a state where surface pressure is applied. The intermetallic compound layer 22 may be joined by heating and melting the first metal member 20, or may be joined by a method of vibration by ultrasonic waves, a laser, or pressure. For example, if the cooling member 45 is Al coated with Ni plating and the first metal member 20 is the Sn main component, the intermetallic compound layer 22 is Ni3Sn, Ni3Sn2, Ni3Sn4, which are intermetallic compounds of Ni and Sn. Etc. are formed.
　パワー半導体モジュール１０１を通電加熱すると、冷却部材４５への放熱の過程で各構成部材には熱膨張が発生する。この熱膨張によってパワー半導体モジュール１０１に反りが発生し、第１金属部材２０に圧縮応力を及ぼして塑性変形するおそれがある。そこで、第１金属部材２０の塑性変形を抑制するために、図４に示すように、第１金属部材２０の厚さＴと第２金属部材２１の厚さＴ’の差はパワー半導体モジュール１０１の反り量ΔＳより小さいことが好ましい。パワー半導体モジュール１０１の反り量ΔＳについては以下に説明する。 When the power semiconductor module 101 is energized and heated, thermal expansion occurs in each component in the process of heat dissipation to the cooling member 45. This thermal expansion causes the power semiconductor module 101 to warp, which may apply compressive stress to the first metal member 20 to cause plastic deformation. Therefore, in order to suppress the plastic deformation of the first metal member 20, as shown in FIG. 4, the difference between the thickness T of the first metal member 20 and the thickness T'of the second metal member 21 is the power semiconductor module 101. It is preferable that the amount of warpage is smaller than ΔS. The warp amount ΔS of the power semiconductor module 101 will be described below.
　パワー半導体素子３２と第２導体板３４とを接合する第２接合材３３の厚さをＨ１、第２導体板３４の厚さをＨ２、絶縁部材４４を構成する樹脂絶縁層４２の厚さをＨ３、絶縁部材４４を構成する金属箔４３の厚さをＨ４とする。さらに、第２接合材３３の線膨張係数をａ１、第２導体板３４の線膨張係数をａ２、樹脂絶縁層４２の線膨張係数をａ３、金属箔４３の線膨張係数をａ４とする。また、通電加熱時のパワー半導体モジュール１０１の温度と室温との温度差をΔTとする。パワー半導体モジュール１０１の反り量ΔSを下記の式（１）によって定義したときに、第１金属部材２０と第２金属部材２１の厚さの差Ｔ－Ｔ’は、ΔＳの値より小さい。例えば、ΔT=１２５℃の場合、ΔSの値は９．９２μmであり、Ｔ－Ｔ’がこれよりも小さくなるように、第１金属部材２０と第２金属部材２１の厚さＴ、Ｔ’がそれぞれ設定される。
　ΔＳ＝Ｈ１×ａ１×ΔＴ＋Ｈ２×ａ２×ΔＴ＋Ｈ３×ａ３×ΔＴ＋Ｈ４×ａ４×ΔＴ　　　　・・・・（１） The thickness of the second joining material 33 for joining the power semiconductor element 32 and the second conductor plate 34 is H1, the thickness of the second conductor plate 34 is H2, and the thickness of the resin insulating layer 42 constituting the insulating member 44 is set. H3, the thickness of the metal foil 43 constituting the insulating member 44 is defined as H4. Further, the coefficient of linear expansion of the second bonding material 33 is a1, the coefficient of linear expansion of the second conductor plate 34 is a2, the coefficient of linear expansion of the resin insulating layer 42 is a3, and the coefficient of linear expansion of the metal foil 43 is a4. Further, the temperature difference between the temperature of the power semiconductor module 101 and the room temperature at the time of energization heating is defined as ΔT. When the warp amount ΔS of the power semiconductor module 101 is defined by the following equation (1), the difference TT'in thickness between the first metal member 20 and the second metal member 21 is smaller than the value of ΔS. For example, when ΔT = 125 ° C., the value of ΔS is 9.92 μm, and the thicknesses T and T'of the first metal member 20 and the second metal member 21 so that T-T'is smaller than this. Are set respectively.
ΔS = H1 × a1 × ΔT + H2 × a2 × ΔT + H3 × a3 × ΔT + H4 × a4 × ΔT ... (1)
　図５は、パワー半導体モジュール１０１の反り量ΔＳの例を示す表である。
　図５の例１および例２は、第２導体板３４の厚さＨ２が４．０ｍｍの場合を、例３および例４は、第２導体板３４の厚さＨ２が２．０ｍｍの場合を示す。さらに、図５の例１および例３は、温度差ΔT=１００℃の場合を、例２および例４は、温度差ΔT=１２５℃の場合を示す。 FIG. 5 is a table showing an example of the warp amount ΔS of the power semiconductor module 101.
In Examples 1 and 2 of FIG. 5, when the thickness H2 of the second conductor plate 34 is 4.0 mm, and in Examples 3 and 4, the thickness H2 of the second conductor plate 34 is 2.0 mm. show. Further, Examples 1 and 3 of FIG. 5 show a case where the temperature difference ΔT = 100 ° C., and Examples 2 and 4 show a case where the temperature difference ΔT = 125 ° C.
　例２に示すように、温度差ΔT=１２５℃の場合は、反り量ΔＳ＝９．９２μｍとなる。この場合は、第１金属部材２０と第２金属部材２１の厚さの差を９．９２μｍ未満にすれば、第２金属部材２１により、パワー半導体モジュール１０１の反りによる第１金属部材２０への圧縮応力を低減できる。 As shown in Example 2, when the temperature difference ΔT = 125 ° C., the warp amount ΔS = 9.92 μm. In this case, if the difference in thickness between the first metal member 20 and the second metal member 21 is less than 9.92 μm, the second metal member 21 causes the power semiconductor module 101 to warp to the first metal member 20. The compressive stress can be reduced.
　ここで、図４に示すように、絶縁部材４４に接する第１金属部材２０は、複数の凹部２０ｂと凸部２０ａとを有する形状でもよい。一般的に金属材料系の熱伝導部材は面圧を大きくすることで接触熱抵抗を低減し、熱抵抗を小さくできることが知られている。凸部２０ａを配置することで、一定荷重が加わった時に、凸部２０ａに負荷される面圧は、凸部２０ａを形成しないときに比べて大きい。よって第１金属部材２０に凸部２０ａを設けると、第１金属部材２０の接触熱抵抗は小さくなり、パワーモジュール１００の放熱性が向上する。 Here, as shown in FIG. 4, the first metal member 20 in contact with the insulating member 44 may have a shape having a plurality of concave portions 20b and convex portions 20a. It is generally known that a heat conductive member made of a metal material can reduce the contact thermal resistance and reduce the thermal resistance by increasing the surface pressure. By arranging the convex portion 20a, the surface pressure applied to the convex portion 20a when a constant load is applied is larger than that when the convex portion 20a is not formed. Therefore, if the convex portion 20a is provided on the first metal member 20, the contact thermal resistance of the first metal member 20 becomes smaller, and the heat dissipation of the power module 100 is improved.
　図６（Ａ）～図６（Ｃ）は、第１金属部材２０の凸部２０ａの面積率と熱抵抗との関係をシミュレーションした結果を示す図である。図６（Ａ）、図６（Ｂ）は、シミュレーションの計算過程を、図６（Ｃ）は、第１金属部材２０の凸部２０ａの面積率と熱抵抗との関係を示すグラフである。 6 (A) to 6 (C) are diagrams showing the results of simulating the relationship between the area ratio of the convex portion 20a of the first metal member 20 and the thermal resistance. 6 (A) and 6 (B) are graphs showing the calculation process of the simulation, and FIG. 6 (C) is a graph showing the relationship between the area ratio of the convex portion 20a of the first metal member 20 and the thermal resistance.
　図６（Ａ）は、第１金属部材２０の一例であるシート形状のInの面圧Ｐ(MPa)と熱抵抗Ｒ１(cm2K/W)の実測値を表す。面圧Ｐとして１０個の実測値を基に最小二乗法による近似曲線を作成し、次式（２）を導いた。
　　Ｒ１=０．０３Ｐ-2＋０．０１２・・・（２）
　ここで、Ｒ１はInの熱抵抗、Ｐは面圧を示す。 FIG. 6A shows the measured values of the surface pressure P (MPa) and the thermal resistance R 1 (cm 2 K / W) of the sheet-shaped In, which is an example of the first metal member 20. An approximate curve by the least squares method was created based on 10 actually measured values as the surface pressure P, and the following equation (2) was derived.
R 1 = 0.03P -2 + 0.012 ... (2)
Here, R 1 indicates the thermal resistance of In, and P indicates the surface pressure.
　図６（Ｂ）は、熱抵抗の増加割合を示す表である。一般に熱抵抗は次式（３）で表される。
　　Ｒ２=ｔ/（ｋ×Ａ）・・・（３）
　ここで、Ｒ２は熱抵抗、ｔは伝熱方向の厚さ、ｋは熱伝達率、Ａは伝熱の面積を表す。
　面積Ａ=１００を基準として面積Ａ=１０から９０の熱抵抗の増加割合を図６（Ｂ）の表に示す。 FIG. 6B is a table showing the rate of increase in thermal resistance. Generally, the thermal resistance is expressed by the following equation (3).
R 2 = t / (k × A) ・ ・ ・ (3)
Here, R 2 represents thermal resistance, t represents the thickness in the heat transfer direction, k represents the heat transfer coefficient, and A represents the area of heat transfer.
The rate of increase in thermal resistance from area A = 10 to 90 with respect to area A = 100 is shown in the table of FIG. 6 (B).
　式（２）と式（３）を用いて、一定荷重が第１金属部材２０に負荷された場合において、図６（Ｃ）に、第１金属部材２０の凸部２０ａの面積率と熱抵抗との関係をグラフに示した。
　図６（Ｃ）では、面積Ａ＝１００を基準にしたときの熱抵抗を基準値１とし、このときの規格化熱抵抗Ｒ１×Ｒ２を縦軸に、横軸に第１金属部材２０の凸部２０ａの面積率（％）を表す。 When a constant load is applied to the first metal member 20 using the formulas (2) and (3), the area ratio and thermal resistance of the convex portion 20a of the first metal member 20 are shown in FIG. 6 (C). The relationship with is shown in the graph.
In FIG. 6 (C), the thermal resistance when referenced to the area A = 100 as a reference value 1, the normalized thermal resistance R 1 × R 2 at this time on the vertical axis, a first metal member to the horizontal axis 20 Represents the area ratio (%) of the convex portion 20a of.
　図６（Ｃ）に示すように、規格化熱抵抗が１以下になる面積率は４０%-１００%の領域であり、規格化熱抵抗が１より大きい面積率は４０%未満の範囲内である。規格化熱抵抗を１以下とすることで、パワーモジュール１００の放熱性を向上できる。熱抵抗を低減するには、第１金属部材２０の凸部の面積率を４０－１００％の範囲内にすることが望ましい。 As shown in FIG. 6C, the area ratio at which the normalized thermal resistance is 1 or less is in the region of 40% -100%, and the area ratio at which the normalized thermal resistance is greater than 1 is within the range of less than 40%. be. By setting the standardized thermal resistance to 1 or less, the heat dissipation of the power module 100 can be improved. In order to reduce the thermal resistance, it is desirable that the area ratio of the convex portion of the first metal member 20 is within the range of 40-100%.
　図７（Ａ）～図７（Ｄ）は、パワーモジュール１００の製造工程を示す図である。
　図７（Ａ）に示すように、第１工程では、第１金属部材２０内に第２金属部材２１を埋設する。第２金属部材２１は、第１金属部材２０よりも硬い金属材料であり、例えば複数の粒子など互いに分離した金属材料である。第１金属部材２０は、圧延加工されたもので所定の長さでカットする。圧延加工の過程で第２金属部材２１が第１金属部材２０よりも突出することを防ぐために、第１金属部材２０の厚さは第２金属部材２１の厚さの１．５倍程度に加工する。 7 (A) to 7 (D) are views showing a manufacturing process of the power module 100.
As shown in FIG. 7A, in the first step, the second metal member 21 is embedded in the first metal member 20. The second metal member 21 is a metal material that is harder than the first metal member 20, and is a metal material that is separated from each other, for example, a plurality of particles. The first metal member 20 is rolled and cut to a predetermined length. In order to prevent the second metal member 21 from protruding more than the first metal member 20 in the rolling process, the thickness of the first metal member 20 is processed to be about 1.5 times the thickness of the second metal member 21. do.
　図７（Ｂ）に示すように、第２工程では、第２金属部材２１を埋設した第１金属部材２０を冷却部材４５の上に載置して、第１金属部材２０を冷却部材４５と接合する。第１金属部材２０を冷却部材４５に載置した後に、第１金属部材２０を加熱溶融させて、冷却部材４５と第１金属部材２０との間に金属間化合物層２２を形成して接合してもよい。また、金型に凹凸を設けて、絶縁部材４４と当接する第１金属部材２０の面には、凸部２０aの面積率が４０%以上含むような凸部２０ａと凹部２０ｂの加工を施してもよい。 As shown in FIG. 7B, in the second step, the first metal member 20 in which the second metal member 21 is embedded is placed on the cooling member 45, and the first metal member 20 is referred to as the cooling member 45. Join. After the first metal member 20 is placed on the cooling member 45, the first metal member 20 is heated and melted to form an intermetallic compound layer 22 between the cooling member 45 and the first metal member 20 and joined to each other. You may. Further, the surface of the first metal member 20 which is provided with irregularities on the mold and comes into contact with the insulating member 44 is processed with the convex portions 20a and the concave portions 20b so that the area ratio of the convex portions 20a is 40% or more. May be good.
　図７（Ｃ）に示すように、第３工程では、プレス加工により第１金属部材２０の厚さを薄くする。具体的には、前述したように、第１金属部材２０と第２金属部材２１の厚さの差は、パワー半導体モジュール１０１の反り量ΔSより小さくなるようにする。第１金属部材２０の厚さは第２金属部材２１より厚くする。 As shown in FIG. 7C, in the third step, the thickness of the first metal member 20 is reduced by press working. Specifically, as described above, the difference in thickness between the first metal member 20 and the second metal member 21 is set to be smaller than the warp amount ΔS of the power semiconductor module 101. The thickness of the first metal member 20 is made thicker than that of the second metal member 21.
　図７（Ｄ）に示すように、第４工程では、第１金属部材２０上に絶縁部材４４を有する図示省略したパワー半導体モジュール１０１を密着する。 As shown in FIG. 7D, in the fourth step, the power semiconductor module 101 (not shown) having the insulating member 44 is brought into close contact with the first metal member 20.
　以上の説明では、片面冷却型のパワーモジュール１００を例に説明した。しかし、両面冷却型のパワーモジュール１００’にも同様に適用することができる。 In the above description, the single-sided cooling type power module 100 has been described as an example. However, it can be similarly applied to the double-sided cooling type power module 100'.
　図８は、両面冷却型のパワーモジュール１００’の断面図である。図２に示したパワーモジュール１００と同一の個所には同一の符号を附してその説明を省略する。
　図８に示すように、パワーモジュール１００’は、第１導体板３０の上に樹脂絶縁層４２’および金属箔４３’よりなる絶縁部材４４’が積層される。さらに、絶縁部材４４’の上には、第１金属部材２０’が積層される。 FIG. 8 is a cross-sectional view of a double-sided cooling type power module 100'. The same parts as those of the power module 100 shown in FIG. 2 are designated by the same reference numerals, and the description thereof will be omitted.
As shown in FIG. 8, in the power module 100', an insulating member 44' made of a resin insulating layer 42'and a metal foil 43' is laminated on the first conductor plate 30. Further, the first metal member 20'is laminated on the insulating member 44'.
　第１金属部材２０’は、第１金属部材２０’内に埋設される第２金属部材２１’を有し、第２金属部材２１’は、第１金属部材２０’よりも硬い金属材料であり、第１金属部材２０’の厚さより薄い厚さである。第１金属部材２０’および第２金属部材２１’は、既に説明した第１金属部材２０および第２金属部材２１と同様であり、その説明を省略する。第１金属部材２０’の上には冷却部材４５’が接合される。 The first metal member 20'has a second metal member 21' embedded in the first metal member 20', and the second metal member 21'is a metal material harder than the first metal member 20'. , The thickness is thinner than the thickness of the first metal member 20'. The first metal member 20'and the second metal member 21'are the same as the first metal member 20 and the second metal member 21 already described, and the description thereof will be omitted. A cooling member 45'is joined on the first metal member 20'.
　本実施形態によれば、パワーサイクル試験や温度サイクル試験によって第１金属部材２０、２０’への圧縮応力が発生したときに、第１金属部材２０、２０’より硬い第２金属部材２１、２１’を第１金属部材２０、２０’に埋設することにより、絶縁部材４４、４４’と冷却部材４５、４５’との隙間を維持し、第１金属部材２０、２０’が降伏応力に至り塑性変形することを抑制できる。 According to the present embodiment, when the compressive stress on the first metal members 20 and 20'is generated by the power cycle test and the temperature cycle test, the second metal members 21 and 21 which are harder than the first metal members 20 and 20' By burying ‘ It is possible to suppress deformation.
　以上説明した実施形態によれば、次の作用効果が得られる。
（１）パワーモジュール１００、１００’は、パワー半導体素子３２と、パワー半導体素子３２と電気的に接続される導体板３０、３４と、導体板３０、３４に積層される絶縁部材４４、４４’とを備えるパワー半導体モジュール１０１と、パワー半導体モジュール１０１の放熱面と対向して配置されるとともに熱的に接続される冷却部材４５、４５’と、絶縁部材４４、４４’と冷却部材４５、４５’との間に配置される第１金属部材２０、２０’と、を備え、第１金属部材２０、２０’は、第１金属部材２０、２０’内に埋設される第２金属部材２１、２１’を有し、第２金属部材２１、２１’は、第１金属部材２０、２０’よりも硬い金属材料であり、第１金属部材２０、２０’の厚さより薄い厚さである。これにより、冷却部材に熱を伝える金属の塑性変形を抑制し、放熱の信頼性を向上させることができる。 According to the embodiment described above, the following effects can be obtained.
(1) The power modules 100 and 100'are the power semiconductor element 32, the conductor plates 30 and 34 electrically connected to the power semiconductor element 32, and the insulating members 44 and 44' laminated on the conductor plates 30 and 34. A power semiconductor module 101 including the above, cooling members 45, 45'arranged and thermally connected to face the heat dissipation surface of the power semiconductor module 101, and insulating members 44, 44'and cooling members 45, 45. The first metal members 20 and 20'are arranged between the first metal members 20 and 20', and the first metal members 20 and 20'are the second metal members 21 and 20'embedded in the first metal members 20 and 20'. The second metal member 21, 21'has 21', and the second metal member 21, 21'is a metal material harder than the first metal member 20, 20', and has a thickness thinner than the thickness of the first metal member 20, 20'. As a result, it is possible to suppress plastic deformation of the metal that transfers heat to the cooling member and improve the reliability of heat dissipation.
（２）パワーモジュール１００、１００’の製造方法は、パワー半導体素子３２と、パワー半導体素子３２と電気的に接続される導体板３０、３４と、導体板３０、３４に積層される絶縁部材４４、４４’とを備えるパワー半導体モジュール１０１と、パワー半導体モジュール１０１の放熱面と対向して配置されるとともに熱的に接続される冷却部材４５、４５’と、絶縁部材４４、４４’と冷却部材４５、４５’との間に配置される第１金属部材２０、２０’と、を備えたパワーモジュール１００、１００’の製造方法であって、第１金属部材２０、２０’内に第１金属部材２０、２０’よりも硬い金属材料よりなる第２金属部材２１、２１’を埋設する第１工程と、第２金属部材２１、２１’を埋設した第１金属部材２０、２０’を冷却部材４５、４５’と接合する第２工程と、第１金属部材２０、２０’の厚さをプレス加工により薄くする第３工程と、第１金属部材２０、２０’にパワー半導体モジュール１０１を密着する第４工程と、を備える。これにより、冷却部材に熱を伝える金属の塑性変形を抑制し、放熱の信頼性を向上させることができる。 (2) The method for manufacturing the power modules 100, 100'is a power semiconductor element 32, a conductor plates 30 and 34 electrically connected to the power semiconductor element 32, and an insulating member 44 laminated on the conductor plates 30 and 34. , 44', cooling members 45, 45'arranged and thermally connected to face the heat dissipation surface of the power semiconductor module 101, and insulating members 44, 44'and cooling members. A method of manufacturing a power module 100, 100'with a first metal member 20, 20'arranged between 45, 45', wherein the first metal is contained in the first metal member 20, 20'. The first step of burying the second metal members 21 and 21'made of a metal material harder than the members 20 and 20'and the first metal members 20 and 20' in which the second metal members 21 and 21'are embedded are cooling members. The power semiconductor module 101 is brought into close contact with the first metal members 20 and 20'in the second step of joining with 45 and 45'and the third step of thinning the thickness of the first metal members 20 and 20'by pressing. A fourth step is provided. As a result, it is possible to suppress plastic deformation of the metal that transfers heat to the cooling member and improve the reliability of heat dissipation.
　本発明は、上述の実施形態に限定されるものではなく、本発明の特徴を損なわない限り、本発明の技術思想の範囲内で考えられるその他の形態についても、本発明の範囲内に含まれる。また、上述の実施形態を組み合わせた構成としてもよい。 The present invention is not limited to the above-described embodiment, and other embodiments considered within the scope of the technical idea of the present invention are also included within the scope of the present invention as long as the features of the present invention are not impaired. .. Further, the configuration may be a combination of the above-described embodiments.
　６…封止樹脂、２０、２０’…第１金属部材、２０ａ…凸部、２０ｂ…凹部、２１、２１’…第２金属部材、２２…金属間化合物層、３０…第１導体板、３１…第１接合材、３２…パワー半導体素子、３２ａ…第１電極面、３２ｂ…第２電極面、３３…第２接合材、３４…第２導体板、３５…ワイヤ部材、４１…金属板、４２、４２’…樹脂絶縁層、４３、４３’…金属箔、４４、４４’…絶縁部材、４５、４５’…冷却部材、５２…直流正極端子、５３…直流負極端子、５４…交流出力端子、５５…制御端子、１００、１００’…パワーモジュール、１０１…パワー半導体モジュール。 6 ... Sealing resin, 20, 20'... First metal member, 20a ... Convex portion, 20b ... Recessed portion, 21, 21' ... Second metal member, 22 ... Intermetal compound layer, 30 ... First conductor plate, 31 ... 1st bonding material, 32 ... Power semiconductor element, 32a ... 1st electrode surface, 32b ... 2nd electrode surface, 33 ... 2nd bonding material, 34 ... 2nd conductor plate, 35 ... Wire member, 41 ... Metal plate, 42, 42'... resin insulating layer, 43, 43' ... metal foil, 44, 44' ... insulating member, 45, 45'... cooling member, 52 ... DC positive electrode terminal, 53 ... DC negative electrode terminal, 54 ... AC output terminal , 55 ... Control terminal, 100, 100'... Power module, 101 ... Power semiconductor module.

Claims (14)

  1. 　パワー半導体素子と、前記パワー半導体素子と電気的に接続される導体板と、前記導体板に積層される絶縁部材とを備えるパワー半導体モジュールと、
    　前記パワー半導体モジュールの放熱面と対向して配置されるとともに熱的に接続される冷却部材と、
    　前記絶縁部材と前記冷却部材との間に配置される第１金属部材と、を備え、
    　前記第１金属部材は、前記第１金属部材内に埋設される第２金属部材を有し、前記第２金属部材は、前記第１金属部材よりも硬い金属材料であり、前記第１金属部材の厚さより薄い厚さであるパワーモジュール。     A power semiconductor module including a power semiconductor element, a conductor plate electrically connected to the power semiconductor element, and an insulating member laminated on the conductor plate.
    A cooling member arranged so as to face the heat dissipation surface of the power semiconductor module and thermally connected to the power semiconductor module.
    A first metal member arranged between the insulating member and the cooling member is provided.
    The first metal member has a second metal member embedded in the first metal member, and the second metal member is a metal material harder than the first metal member, and the first metal member. A power module that is thinner than the thickness of.
  2. 　請求項１に記載のパワーモジュールにおいて、
    　前記パワー半導体モジュールは、前記パワー半導体素子の両面に、前記導体板および前記絶縁部材を備え、
    　前記冷却部材、および前記第１金属部材は、前記パワー半導体モジュールの両面に設けられるパワーモジュール。     In the power module according to claim 1,
    The power semiconductor module includes the conductor plate and the insulating member on both sides of the power semiconductor element.
    The cooling member and the first metal member are power modules provided on both sides of the power semiconductor module.
  3. 　請求項１または請求項２に記載のパワーモジュールにおいて、
    　前記第２金属部材は、Cu及びNi素材により構成されるパワーモジュール。     In the power module according to claim 1 or 2.
    The second metal member is a power module made of Cu and Ni materials.
  4. 　請求項１または請求項２に記載のパワーモジュールにおいて、
    　前記第１金属部材の厚さは、４０－２００μmであるパワーモジュール。     In the power module according to claim 1 or 2.
    A power module having a thickness of 40-200 μm for the first metal member.
  5. 　請求項１または請求項２に記載のパワーモジュールにおいて、
    　前記第２金属部材は、互いに分離した金属材料であるパワーモジュール。     In the power module according to claim 1 or 2.
    The second metal member is a power module which is a metal material separated from each other.
  6. 　請求項１または請求項２に記載のパワーモジュールにおいて、
    　前記第２金属部材は、少なくとも、平板状の前記パワー半導体素子に直交する方向から視て、前記パワー半導体素子の領域に対向する前記第１金属部材の領域内に設けられるパワーモジュール。     In the power module according to claim 1 or 2.
    The second metal member is at least a power module provided in the region of the first metal member facing the region of the power semiconductor element when viewed from a direction orthogonal to the flat plate-shaped power semiconductor element.
  7. 　請求項１または請求項２に記載のパワーモジュールにおいて、
    　前記第１金属部材と前記絶縁部材との間、又は前記第１金属部材と前記冷却部材との間に、金属間化合物層を形成するパワーモジュール。     In the power module according to claim 1 or 2.
    A power module that forms an intermetallic compound layer between the first metal member and the insulating member, or between the first metal member and the cooling member.
  8. 　請求項７に記載のパワーモジュールにおいて、
    　前記第１金属部材は、前記絶縁部材または前記冷却部材の一方と面圧が印加された状態で接触するパワーモジュール。     In the power module according to claim 7,
    The first metal member is a power module that comes into contact with one of the insulating member or the cooling member in a state where surface pressure is applied.
  9. 　請求項１または請求項２に記載のパワーモジュールにおいて、
    　前記パワー半導体素子と前記導体板とを接合する第２接合材の厚さをＨ１、前記導体板の厚さをＨ２、前記絶縁部材を構成する樹脂絶縁層の厚さをＨ３、前記絶縁部材を構成する金属箔の厚さをＨ４とし、
    　前記第２接合材の線膨張係数をａ１、前記導体板の線膨張係数をａ２、前記樹脂絶縁層の線膨張係数をａ３、前記金属箔の線膨張係数をａ４とし、
    　前記パワー半導体モジュールの温度と室温との温度差をΔＴとし、
    　前記パワー半導体モジュールの反り量ΔＳを下記の式によって定義したときに、前記第１金属部材と前記第２金属部材の厚さの差は、前記ΔＳの値より小さいパワーモジュール。
    　ΔＳ＝Ｈ１×ａ１×ΔＴ＋Ｈ２×ａ２×ΔＴ＋Ｈ３×ａ３×ΔＴ＋Ｈ４×ａ４×ΔＴ     In the power module according to claim 1 or 2.
    The thickness of the second bonding material for joining the power semiconductor element and the conductor plate is H1, the thickness of the conductor plate is H2, the thickness of the resin insulating layer constituting the insulating member is H3, and the insulating member is. The thickness of the constituent metal foil is H4,
    The coefficient of linear expansion of the second bonding material is a1, the coefficient of linear expansion of the conductor plate is a2, the coefficient of linear expansion of the resin insulating layer is a3, and the coefficient of linear expansion of the metal foil is a4.
    Let ΔT be the temperature difference between the temperature of the power semiconductor module and room temperature.
    When the warp amount ΔS of the power semiconductor module is defined by the following equation, the difference in thickness between the first metal member and the second metal member is smaller than the value of ΔS.
    ΔS = H1 × a1 × ΔT + H2 × a2 × ΔT + H3 × a3 × ΔT + H4 × a4 × ΔT
  10. 　請求項１または請求項２に記載のパワーモジュールにおいて、
    　前記絶縁部材と接触する前記第１金属部材の表面は凹凸形状を形成し、凸部の面積率は４０%以上であるパワーモジュール。     In the power module according to claim 1 or 2.
    A power module in which the surface of the first metal member in contact with the insulating member has an uneven shape, and the area ratio of the convex portion is 40% or more.
  11. 　パワー半導体素子と、前記パワー半導体素子と電気的に接続される導体板と、前記導体板に積層される絶縁部材とを備えるパワー半導体モジュールと、前記パワー半導体モジュールの放熱面と対向して配置されるとともに熱的に接続される冷却部材と、前記絶縁部材と前記冷却部材との間に配置される第１金属部材と、を備えたパワーモジュールの製造方法であって、
    　前記第１金属部材内に前記第１金属部材よりも硬い金属材料よりなる第２金属部材を埋設する第１工程と、
    　前記第２金属部材を埋設した第１金属部材を冷却部材と接合する第２工程と、
    　前記第１金属部材の厚さをプレス加工により薄くする第３工程と、
    　前記第１金属部材に前記パワー半導体モジュールを密着する第４工程と、
    　を備えるパワーモジュールの製造方法。     A power semiconductor module including a power semiconductor element, a conductor plate electrically connected to the power semiconductor element, and an insulating member laminated on the conductor plate is arranged so as to face the heat dissipation surface of the power semiconductor module. It is a method of manufacturing a power module including a cooling member that is thermally connected together with the heat insulating member and a first metal member that is arranged between the insulating member and the cooling member.
    The first step of burying a second metal member made of a metal material harder than the first metal member in the first metal member, and
    The second step of joining the first metal member in which the second metal member is embedded to the cooling member,
    The third step of reducing the thickness of the first metal member by press working, and
    The fourth step of bringing the power semiconductor module into close contact with the first metal member,
    How to manufacture a power module.
  12. 　請求項１１に記載のパワーモジュールの製造方法において、
    　前記第２工程は、第１金属部材を加熱溶融させて、前記冷却部材と前記第１金属部材との間に金属間化合物を形成して接合する工程を含むパワーモジュールの製造方法。     In the method for manufacturing a power module according to claim 11,
    The second step is a method for manufacturing a power module, which comprises a step of heating and melting a first metal member to form an intermetallic compound between the cooling member and the first metal member and joining them.
  13. 　請求項１１に記載のパワーモジュールの製造方法において、
    　前記第２工程は、前記絶縁部材と当接する前記第１金属部材の面に、凸部の面積率が４０%以上含むような凸部と凹部の加工を施す工程を含むパワーモジュールの製造方法。     In the method for manufacturing a power module according to claim 11.
    The second step is a method for manufacturing a power module, which comprises a step of processing a convex portion and a concave portion so that the area ratio of the convex portion includes 40% or more on the surface of the first metal member that comes into contact with the insulating member.
  14. 　請求項１１に記載のパワーモジュールの製造方法において、
    　前記第３工程は、前記第１金属部材と前記第２金属部材の厚さの差が、前記パワー半導体モジュールの反り量ΔSより小さくなるように、第１金属部材の厚さを前記プレス加工により薄くするパワーモジュールの製造方法。
    　ここで、前記パワー半導体素子と前記導体板とを接合する第２接合材の厚さをＨ１、前記導体板の厚さをＨ２、前記絶縁部材を構成する樹脂絶縁層の厚さをＨ３、前記絶縁部材を構成する金属箔の厚さをＨ４とし、前記第２接合材の線膨張係数をａ１、前記導体板の線膨張係数をａ２、前記樹脂絶縁層の線膨張係数をａ３、前記金属箔の線膨張係数をａ４とし、前記パワー半導体モジュールの温度と室温との温度差をΔＴとし、前記パワー半導体モジュールの反り量ΔＳは下記の式によって定義する。
    　ΔＳ＝Ｈ１×ａ１×ΔＴ＋Ｈ２×ａ２×ΔＴ＋Ｈ３×ａ３×ΔＴ＋Ｈ４×ａ４×ΔＴ      In the method for manufacturing a power module according to claim 11.
    In the third step, the thickness of the first metal member is pressed by the press working so that the difference in thickness between the first metal member and the second metal member is smaller than the warp amount ΔS of the power semiconductor module. How to make a thin power module.
    Here, the thickness of the second bonding material for joining the power semiconductor element and the conductor plate is H1, the thickness of the conductor plate is H2, the thickness of the resin insulating layer constituting the insulating member is H3, and the above. The thickness of the metal foil constituting the insulating member is H4, the linear expansion coefficient of the second bonding material is a1, the linear expansion coefficient of the conductor plate is a2, the linear expansion coefficient of the resin insulating layer is a3, and the metal foil. The linear expansion coefficient of the power semiconductor module is a4, the temperature difference between the temperature of the power semiconductor module and the room temperature is ΔT, and the warp amount ΔS of the power semiconductor module is defined by the following equation.
    ΔS = H1 × a1 × ΔT + H2 × a2 × ΔT + H3 × a3 × ΔT + H4 × a4 × ΔT
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