WO2021253560A1 - 显示面板及其制备方法、显示装置 - Google Patents

显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2021253560A1
WO2021253560A1 PCT/CN2020/103180 CN2020103180W WO2021253560A1 WO 2021253560 A1 WO2021253560 A1 WO 2021253560A1 CN 2020103180 W CN2020103180 W CN 2020103180W WO 2021253560 A1 WO2021253560 A1 WO 2021253560A1
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WO
WIPO (PCT)
Prior art keywords
light
display panel
display
substrate
emitting device
Prior art date
Application number
PCT/CN2020/103180
Other languages
English (en)
French (fr)
Inventor
钟莉
查国伟
Original Assignee
武汉华星光电技术有限公司
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Filing date
Publication date
Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US16/975,710 priority Critical patent/US20230099190A1/en
Publication of WO2021253560A1 publication Critical patent/WO2021253560A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/01—Function characteristic transmissive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • This application relates to the field of display technology, and in particular to a display panel, a manufacturing method thereof, and a display device.
  • the high-screen-to-body ratio display device has a narrower screen frame and a larger display area, which can provide consumers with a better experience, and has become a research focus in the display field.
  • the existing full-screen display device cannot be spatially overlapped due to the under-screen sensing technology and the optical display, so that the display device still cannot achieve display in the area where the sensor is provided; in addition, in order to realize the under-screen sensing technology, the thickness of the display device Will be affected to a certain extent, which is not conducive to the user experience. Therefore, how to realize the true full-screen display of the display device and reduce the thickness of the display device has become a hot issue of research.
  • the embodiments of the present application provide a display panel, a manufacturing method thereof, and a display device, which can solve the problem that the under-screen sensing technology and the optical display cannot overlap spatially, and the display device is relatively thick.
  • An embodiment of the present application provides a display panel including a first display area, and the display panel includes:
  • a plurality of first pixel units are located in the first display area, and each of the first pixel units includes a light-transmitting area and a light-emitting device arranged adjacent to the light-transmitting area;
  • a first substrate including a first portion located in the first display area, the first portion including a first driving circuit and an electrical connection line located on the first driving circuit;
  • the light-emitting device is mounted on the first part, and the light-emitting device includes an electrode facing away from the first driving circuit, and the electrode is electrically connected to the first driving circuit through the electrical connection line.
  • the light-emitting device is a self-luminous display device.
  • the light emitting device includes at least one of a sub-millimeter light emitting diode or a micro light emitting diode.
  • the light emitting device further includes a main body mounted on the first substrate, the electrode extends from the main body, and the electrical connection line extends along the surface of the main body.
  • the electrode includes a first electrode and a second electrode extending from the main body;
  • the electrical connection line includes a first line and a second line, and the first line is electrically connected to the The first electrode and the first drive circuit, the first line extends along the surface of the main body, the second line electrically connects the second electrode and the first drive circuit, and the second line extends along the The surface of the main body extends.
  • the preparation material of the electrical connection line includes at least one of Ti, Al, Mo, and ITO.
  • the cross-sectional size of the electrical connection line is greater than or equal to 100 nanometers and less than or equal to 1000 nanometers.
  • the display panel further includes a second display area arranged adjacent to the first display area, and the display panel further includes a plurality of second pixels located in the second display area Unit, the light emitting mode of the plurality of second pixel units is different from the light emitting mode of the plurality of first pixel units.
  • each of the second pixel units is a liquid crystal display pixel unit.
  • the first substrate further includes a second part located in the second display area; the second part includes a second driving circuit, and the second driving circuit is used to drive a plurality of The second pixel unit.
  • the material of the electrical connection line and the conductive layer in the second driving circuit are arranged in the same layer and have the same material.
  • the conductive layer includes a pixel electrode, and the electrical connection line and the pixel electrode are provided in the same layer and made of the same material.
  • the display panel further includes a second substrate disposed opposite to the first substrate, and a portion of the second substrate corresponding to the second part includes a color film unit.
  • the display panel further includes:
  • the first polarizer is located on a side of the first substrate away from the second substrate, and the first polarizer is provided with a via hole in a portion corresponding to the first part;
  • the second polarizer is located on the side of the second substrate away from the first substrate.
  • the display panel further includes:
  • the backlight module is located on a side of the first polarizer away from the first substrate, and a portion of the backlight module corresponding to the first part is provided with a via hole.
  • the area of the light-emitting device is smaller than or equal to the area of the light-transmitting area.
  • This application also provides a method for manufacturing a display panel, including the following steps:
  • the first part of the first substrate corresponds to the first display area of the display panel
  • the second part of the first substrate corresponds to the second display area of the display panel adjacent to the first display area
  • the display panel includes a plurality of first pixel units located in the first display area and a plurality of second pixel units located in the second display area, a plurality of the first pixel units and a plurality of the first pixel units
  • the light emitting modes of the two pixel units are different.
  • Each of the first pixel units includes a light-transmitting area and the light-emitting device arranged adjacent to the light-transmitting area, and a plurality of the second pixel units are driven by the second Circuit drive.
  • the light-emitting device includes at least one of a sub-millimeter light-emitting diode or a miniature light-emitting diode.
  • the present application also provides a display device, including the display panel and a sensor; the display panel includes:
  • a plurality of first pixel units are located in the first display area, and each of the first pixel units includes a light-transmitting area and a light-emitting device arranged adjacent to the light-transmitting area;
  • a first substrate including a first portion located in the first display area, the first portion including a first driving circuit and an electrical connection line located on the first driving circuit;
  • the light-emitting device is mounted on the first part, and the light-emitting device includes an electrode facing away from the first driving circuit, and the electrode is electrically connected to the first driving circuit through the electrical connection line;
  • the sensor is facing the first display area.
  • the senor includes at least one of a fingerprint recognition sensor, a camera, a structured light sensor, a time-of-flight sensor, a distance sensor, and a light sensor.
  • the display panel includes a first display area, the display panel includes: a plurality of first pixel units, and a plurality of The first pixel unit is located in the first display area, and each of the first pixel units includes a light-transmitting area and a light-emitting device arranged adjacent to the light-transmitting area; a first substrate, the first substrate including In the first part of the first display area, the first part includes a first driving circuit and an electrical connection line on the first driving circuit; wherein the light-emitting device is mounted on the first part, and the The light emitting device includes an electrode facing away from the first driving circuit, and the electrode is electrically connected to the first driving circuit through the electrical connection line, so that the display panel realizes under-screen sensing technology and optical display in space
  • the upper overlap reduces the thickness of the display panel.
  • the display device made by using the display panel can also realize the spatial overlap of the under-screen sensing technology and optical display in space.
  • FIGS. 1A to 1C are schematic diagrams of the structure of a display panel provided by an embodiment of the application.
  • 1D to 1E are schematic diagrams of the structure of the first part of the first substrate provided by the embodiments of the application;
  • FIGS. 2A to 2B are top views of the first pixel unit provided by the embodiments of the application.
  • 3A to 3F are top views of the display panel provided by the embodiment of the application.
  • FIG. 4 is a preparation flow chart of the display panel provided by the embodiment of the application.
  • 5A to 5D are schematic diagrams of the manufacturing process of the display panel provided by the embodiments of the application.
  • FIG. 6 is a schematic structural diagram of a display device provided by an embodiment of the application.
  • 103-second pixel unit 104-second substrate; 1041-color film unit; 1051-first polarizer; 1052-second polarizer; 106-liquid crystal molecules; 107-frame glue; 108-backlight module; 601 -sensor.
  • FIGS. 1A to 1C are schematic diagrams of the structure of the display panel provided by the embodiment of the application; as shown in FIGS. 1D to 1E, which are the first part of the first substrate provided by the embodiment of the application 2A ⁇ Figure 2B, which is a top view of the first pixel unit provided by the embodiment of the application; as shown in Figure 3A ⁇ Figure 3F, which is the display panel provided by the embodiment of the application Top view; the display panel includes a first display area 100a, and the display panel includes:
  • a plurality of first pixel units 101, the plurality of first pixel units 101 are located in the first display area 100a, each of the first pixel units 101 includes a light-transmitting area 1011 and a light-transmitting area 1011 Adjacently arranged light emitting device 1012;
  • the first substrate 102 includes a first portion 102a located in the first display area 100a, and the first portion 102a includes a first drive circuit 1021 and an electrical circuit located on the first drive circuit 1021. Connecting line 1022;
  • the light-emitting device 1012 is mounted on the first portion 102a, the light-emitting device 1012 includes an electrode 1012a facing away from the first driving circuit 1021, and the electrode 1012a is connected to the first driving circuit 1022 through the electrical connection line 1022.
  • the circuit 1021 is electrically connected.
  • each of the first pixel units 101 includes the light-transmitting area 1011 and the light-emitting device 1012, the light-transmitting area 1011 enables the first display area 100a to have a certain transmittance.
  • the light area 1011 can provide a signal transmission channel for under-screen sensing technology, and the light-emitting device 1012 can ensure the normal display of the first pixel unit 101, so that the display panel implements under-screen sensing technology and optics.
  • the overlap of the display in space facilitates the display panel to realize a full-screen design.
  • the area of the light emitting device 1012 is smaller than or equal to the area of the light transmission area 1011, so that the first The display area 100a has a certain light transmittance, as shown in FIGS. 2A to 2B.
  • the first pixel unit 101 includes a plurality of first sub-pixels 101a, each of the first sub-pixels 101a includes the light-transmitting area 1011 and the light-emitting device 1012, and each of the first sub-pixels 101a In the pixel 101a, the area of the light-transmitting region 1011 accounts for 50% to 99% of the area of the first sub-pixel 101a.
  • each of the light-emitting devices 1012 is greater than or equal to 1 micrometer and less than or equal to 500 micrometers; the size of each of the first sub-pixels 101a is greater than or equal to 10 micrometers and less than or equal to 1000 micrometers; wherein The size of the light-emitting device 1012 refers to the length or width of the light-emitting device 1012 in a top-view viewing angle; similarly, the size of the first sub-pixel 101a refers to the size of the first sub-pixel 101a in a top-view viewing angle. Long or wide.
  • the light emitting device 1012 is a self-luminous display device; specifically, the light emitting device 1012 includes at least one of a sub-millimeter light emitting diode or a miniature light emitting diode; further Ground, the light-emitting device 1012 is a miniature light-emitting diode, so that when the first display area 100a has a smaller light-emitting area, the display quality of the first display area 100a is not affected.
  • the light-emitting device 1012 is provided on the first portion 102a of the first substrate 102 in a built-in form, which can prevent the display panel from appearing in the first display area 100a when the light-emitting device 1012 is provided in an externally mounted form The problem of the screen floating.
  • the light emitting device 1012 further includes a main body 1012d mounted on the first substrate 102, the electrode 1012a extends from the main body 1012d, and the electric
  • the connecting wire 1022 extends along the surface of the main body 1012d, and the cross-sectional size of the electrical connecting wire 1022 is greater than or equal to 100 nanometers and less than or equal to 1000 nanometers, so as to reduce the thickness of the display panel.
  • the electrode 1012a includes a first electrode 1012b and a second electrode 1012c extending from the main body 1012d;
  • the electrical connection line 1022 includes a first line 1022a and a second line 1022b, and the first line 1022a is electrically connected
  • the first electrode 1012b is electrically connected to the first driving circuit 1021, the first line 1022a extends along the surface of the main body 1012d;
  • the second line 1022b is electrically connected to the second electrode 1012c and the first A driving circuit 1021, the second line 1022b extends along the surface of the main body 1012d.
  • the preparation material of the electrical connection wire 1022 includes at least one of Ti (titanium), Al (aluminum), Mo (molybdenum), and ITO (indium tin oxide);
  • the light transmittance of the first display area 100a is affected, and the material of the electrical connection line 1022 is a transparent metal material; wherein, the transparent metal material includes indium tin oxide.
  • the preparation material of the electrode 1012a is the same as the preparation material of the electrical connection wire 1022; specifically, the preparation material of the electrode 1012a is a transparent metal material; the transparent metal material includes indium tin oxide to ensure The first display area 100a has a relatively high light transmittance.
  • the display panel further includes a second display area 100b disposed adjacent to the first display area 100a, and the display panel further includes a display area 100b located in the second display area 100b.
  • One second pixel unit 103, the light emitting mode of the plurality of second pixel units 103 is different from the light emitting mode of the plurality of first pixel units 101.
  • each of the second pixel units 103 is a liquid crystal display pixel unit.
  • the first substrate 102 further includes a second portion 102b located in the second display area 100b; the second portion 102b includes a second driving circuit 1023, and the second driving circuit 1023 is used to drive a plurality of the The second pixel unit 103.
  • the material of the electrical connection line 1022 and the conductive layer in the second driving circuit 1023 are arranged in the same layer and have the same material; further, the conductive layer includes a pixel electrode, and the electrical connection line 1022 is connected to the conductive layer.
  • the pixel electrodes are arranged in the same layer and have the same material.
  • the display panel further includes a second substrate 104 disposed opposite to the first substrate 102, and a portion of the second substrate 104 corresponding to the second portion 102b includes a color filter unit 1041, as shown in FIG. 1A.
  • the light-emitting device 1012 includes a red light-emitting device, a green light-emitting device, a blue light-emitting device, etc. to realize full-color display of the display panel.
  • the display panel can use the color conversion film to realize full-color display.
  • the display panel further includes a color conversion film 1013 on the side of the light emitting device 1012 away from the first substrate 102, and the color conversion film 1013 includes a first color conversion film 1013.
  • the first color conversion unit 1013a absorbs the blue light emitted by the light-emitting device 1012 and emits light of red, green, orange, or yellow light.
  • the second color conversion unit 1013b transmits the blue light emitted by the light emitting device 1012.
  • the plurality of first color conversion units 1013a may absorb the light emitted by the light emitting device 1012 differently, that is, the plurality of first color conversion units 1013a further include a first sub-color conversion unit and a second sub-color conversion.
  • the first sub-color conversion unit absorbs the light emitted by the light-emitting device 1012 and the second sub-color conversion unit absorbs the light emitted by the light-emitting device 1012 in a different color.
  • the color conversion film 1013 can be located in the second substrate 104; further, the first color conversion unit 1013a and the second color conversion unit 1013b of the color conversion film 1013 can be combined with The color filter unit 1041 on the second substrate 104 is prepared in the same layer. That is, the portion of the second substrate 104 corresponding to the first portion 102a includes the first color conversion unit 1013a and the second color conversion unit 1013b, as shown in FIG. 1C.
  • the area of the first color conversion unit 1013a and the second color conversion unit 1013b in the color conversion film 1013 It is equal to the area of the light emitting device 1012, and in a top view angle, the first color conversion unit 1013a and the second color conversion unit 1013b respectively cover the corresponding light emitting device 1012, as shown in FIG. 2B.
  • the first display area 100a and the second display area 100b are adjacently arranged.
  • the second pixel unit 103 includes the corresponding color filter unit 1041.
  • the first pixel unit 101 and the color filter unit 1041 are in the first display area 100a and the color filter unit 1041.
  • the second display area 100b meets at the junction.
  • the sub-color film unit 1041a and the light-emitting device near the junction of the first display area 100a and the second display area 100b in the color filter unit 1041
  • the color of the light emitting device 1012e near the junction of the first display area 100a and the second display area 100b in 1012 is the same, that is, if the sub color film unit 1041a is a red color film unit, the light emitting device 1012e is also It is a red light-emitting device.
  • the sub-color film unit 1041a in the color film unit 1041 near the junction of the first display area 100a and the second display area 100b The first color conversion unit 1013a or the second color conversion unit 1013b in the color conversion film 1013 near the junction of the first display area 100a and the second display area 100b
  • the colors of a are the same.
  • the display panel also includes:
  • the first polarizer 1051 is located on the side of the first substrate 102 away from the second substrate 104, and a portion of the first polarizer 1051 corresponding to the first portion 102a is provided with a via hole;
  • the second polarizer 1052 is located on the side of the second substrate 104 away from the first substrate 102.
  • the display panel further includes liquid crystal molecules 106 and sealant 107 located between the first substrate 102 and the second substrate 104.
  • the first polarizer 1051 is provided with a via hole in the portion corresponding to the first portion 102a, although the liquid crystal molecules 1061 change the polarization state of the light in the first display area 100a, they only receive The second polarizer 1052 acts and cannot realize the dimming function. Therefore, the liquid crystal molecules 1061 will not affect the display of the first display area 100a.
  • the second polarizer 1052 may also be provided with the via hole in the portion corresponding to the first portion 102a, as shown in FIG. 1C.
  • the display panel also includes:
  • the backlight module 108 is located on a side of the first polarizer 1051 away from the first substrate 102, and a portion of the backlight module 108 corresponding to the first portion 102a is provided with a via hole.
  • the material of the first substrate 102 is high light-transmitting material, including glass, colorless polyimide material, and acrylic Materials, etc.
  • the first substrate 102 further includes a substrate, a buffer layer, and other parts not shown;
  • the first driving circuit 1021 also includes a first thin film transistor, a first control circuit, and other parts not shown.
  • the second driving circuit 1023 also includes a second thin film transistor, a second control circuit, and other parts that are not shown.
  • the manner in which the first driving circuit 1021 drives the light emitting device 1012 includes an active addressing driving method and a passive addressing driving method; specifically, the active addressing method includes using low-temperature polysilicon technology and amorphous silicon technology , The driving method of indium gallium zinc oxide technology; when the area of the first display area 100a is small (for example, less than 10*10mm), the first driving circuit 1021 adopts a passive addressing driving method to drive the The light emitting device 1012 enables the display panel to obtain higher light transmittance.
  • first display area 100a and the second display area 100b adopt different light emitting modes for display, there may be a difference in size between the first thin film transistor and the second thin film transistor.
  • the sizes of the transistors and the second thin film transistors can be obtained by photoelectric matching according to the design requirements of the first display area 100a and the second display area 100b, respectively, which will not be repeated here.
  • the display brightness difference between the first display area 100a and the second display area 100b can be matched according to the subsequent software algorithm; the display between the first display area 100a and the second display area 100b
  • the accuracy difference can be optimized through the matching design of the resolution, which will not be repeated here.
  • each second pixel unit 103 may also adopt the same light emitting mode as the first pixel unit 101, that is, the second pixel unit 103 includes a plurality of second light-emitting devices, and the second pixel unit 103 includes a plurality of second light-emitting devices.
  • the light emitting device includes at least one of an organic light emitting diode, a sub-millimeter light emitting diode, or a micro light emitting diode.
  • the first pixel unit 101 and the second pixel unit 103 are arranged adjacent to each other.
  • the first pixel unit 101 and the second pixel unit 103 are connected at the junction of the first display area 100a and the second display area 100b.
  • the second sub-light-emitting device near the junction of the first display area 100a and the second display area 100b and the light-emitting device 1012 near the first display area 100a
  • the color of the light-emitting device 1012e at the junction with the second display area 100b is the same, that is, if the second sub-light-emitting device is a green light-emitting device, the light-emitting device 1012e is also a green light-emitting device.
  • the first display area 100a may be located on the upper part of the display panel, or may be located on the lower part of the display panel.
  • the position of the first display area 100a may be based on The actual design requirements are designed, so I won’t repeat them here.
  • the shape of the first display area 100a includes one or a combination of a circle and a polygon.
  • the specific shape of the first display area 100a can also be designed according to actual design requirements, and will not be omitted here. Go into details.
  • the display panel may further include a plurality of the first display regions 100a, the plurality of the first display regions 100a are arranged adjacent to the second display region 100b, and the plurality of the first display regions 100a are
  • the specific distribution method is designed according to actual needs, and will not be repeated here.
  • the shape of the display panel shown in FIGS. 3A to 3F, the shape and position of the first display area 100a, the second display area 100b, etc. are all exemplary descriptions, and are not used to limit the present application. Technicians can design according to actual needs.
  • FIG. 4 is a flow chart of the preparation process of the display panel provided by the embodiment of the application; as shown in FIGS. 5A to 5D, which are schematic diagrams of the preparation process of the display panel provided by the embodiment of the application.
  • This application also provides a method for manufacturing a display panel, including the following steps:
  • the first substrate 102 includes a first portion 102a and a second portion 102b adjacent to the first portion 102a.
  • the first portion 102a includes a first driving circuit 1021, and the second portion 102b includes The second driving circuit 1023, as shown in FIG. 5A;
  • the electrical connection line 1022 electrically connects the electrode 1012a and the first driving circuit 1021, as shown in FIG. 5C;
  • the first portion 102a of the first substrate 102 corresponds to the first display area 100a of the display panel
  • the second portion 100b of the first substrate 102 corresponds to the area adjacent to the first display area 100a of the display panel.
  • the display panel includes a plurality of first pixel units located in the first display area 100a and a plurality of second pixel units 103 located in the second display area 100b.
  • the first pixel unit and the plurality of second pixel units 103 have different light-emitting modes, and each of the first pixel units includes a light-transmitting area 1011 and the light-emitting device 1012 arranged adjacent to the light-transmitting area 1011,
  • the plurality of second pixel units 103 are driven by the second driving circuit 1023.
  • the light-emitting device 1012 includes at least one of a sub-millimeter light-emitting diode or a miniature light-emitting diode.
  • the light emitting device 1012 is a miniature light emitting diode; in the step S20, the light emitting device 1012 on the growth substrate or the intermediate substrate is transferred to the light emitting device 1012 on the growth substrate or the intermediate substrate by a massive transfer method such as electromagnetic force, electrostatic force, and van der Waals force.
  • the first driving circuit 1021 is described above.
  • the thickness of the light emitting device 1012 is greater than or equal to 1 micrometer and less than or equal to 5 micrometers; further, the thickness of the light emitting device 1012 is equal to 3 micrometers.
  • the area of the first display area 100a is less than or equal to 30*30mm; further, the area of the first display area 100a is less than or equal to 10*10mm, so that the mass transfer method is used to prepare the first portion 102a.
  • the first portion 102a has a good transfer yield and realizes cost control.
  • the number of light-emitting devices 1012 that need to be prepared in the first part 102a will also affect the yield and product cost of the light-emitting devices 1012.
  • the light-emitting devices 1012 that need to be prepared in the first part 102a In the case that the first display area 100a has a small area, the yield rate of the light-emitting device 1012 is also higher when the first part 102 adopts a mass transfer method, and the cost is controlled It is also more advantageous.
  • the number of the light-emitting devices 1012 to be prepared in the first part 102a is determined by design requirements, and those skilled in the art can set it according to actual requirements, which will not be repeated here.
  • the electrical connection line 1022 is formed by a deposition process, and the deposition process includes electroplating, electroless plating, printing, evaporation, sputtering, and the like. Specifically, in step S30, a full-surface electrical connection line layer is formed on the side of the light emitting device 1012 away from the first substrate 102, and then the electrical connection line 1022 is manufactured by a yellow light process. Or in step S30, a metal mask is provided, and the electrical connection line 1022 is formed on the surface of the light emitting device 1012 and the first driving circuit 1021 by using the metal mask.
  • the electrical connection line 1022 can also be formed by photoresist stripping; specifically, in the step S30, a full-surface photoresist is formed on the side of the light emitting device 1012 away from the first substrate 102. Then, the photoresist layer is patterned, and the electrical connection line 1022 is fabricated by a deposition process, and finally the remaining photoresist layer is removed.
  • the material of the electrical connection wire 1022 can be arranged in the same layer and the same material as the conductive layer in the second driving circuit 1023; the preparation material of the electrical connection wire 1022 includes Ti (titanium), Al (aluminum), Mo (molybdenum) , At least one of ITO (Indium Tin Oxide).
  • the thickness of the electrical connection wire 1022 can be maintained at a nanometer level; specifically, the cross-sectional dimension of the electrical connection wire 1022 is greater than or equal to 100 nanometers and less than or equal to 1000. Nano. If the second pixel unit 1023 is a liquid crystal display unit, the cell pitch after the pair of the first substrate 102 and the second substrate 104 forms a cell is greater than or equal to 1 micrometer and less than or equal to 5 micrometers; further, The cell spacing between the first substrate 102 and the second substrate 104 after forming a cell is equal to 3 micrometers, so as to reduce the influence on the light transmittance of the display panel.
  • the manufacturing method further includes the following steps:
  • S40 Provide a second substrate 104, combine the second substrate 104 and the first substrate 102 into a cell, and inject liquid crystal molecules 106 between the first substrate 102 and the second substrate 104; wherein, The portion of the second substrate 104 corresponding to the second portion 102b includes a color filter unit 1041; the liquid crystal molecules 106 are located in the area defined by the sealant 107;
  • S50 preparing a first polarizer 1051 on the side of the first substrate 102 away from the second substrate 104, and forming a second polarizer 1052 on the side of the second substrate 104 away from the first substrate 102;
  • the first polarizer 1051 is provided with a via hole in a portion corresponding to the first portion 102a;
  • S60 Prepare a backlight module 108 on the side of the first polarizer 1051 away from the second substrate 104; wherein, the backlight module 108 is provided with a via hole in a portion corresponding to the first portion 102a, as shown in FIG. Shown in 5D.
  • the first drive circuit 1021 and the second drive circuit 1023 can be formed in the area of the large board corresponding to the first substrate 102 first, and then the large board can be cut out according to the design specifications.
  • the first substrate 102 is needed; after that, the light emitting device 1012 is formed at the first portion 102a of the first substrate 102 by mass transfer technology; the electrical connection line 1022 is formed by a deposition process; finally, The second substrate 104 obtained by cutting according to the design specification is combined with the first substrate 102 to form a box through a chip-level paired box technology, so as to reduce the difficulty of the manufacturing process and ensure the product yield.
  • FIG. 6 is a schematic structural diagram of a display device provided by an embodiment of the present application.
  • the present application also provides a display device, including the display panel or the display panel manufactured by the manufacturing method; and a sensor 601.
  • the sensor 601 is directly facing the first display area 100a.
  • the sensor 601 includes a fingerprint recognition sensor, a camera, a structured light sensor, a time-of-flight sensor, a distance sensor, a light sensor, and the like.
  • the sensor 601 can collect signals through the light-transmitting area 1011 to realize various under-screen sensing solutions such as fingerprint recognition, under-screen camera, under-screen recognition, under-screen distance perception, etc.;
  • the light emitting device 1012 can ensure the normal display of the first display area 100a, so that the display panel realizes the spatial overlap of the under-screen sensing technology and the optical display, and realizes the full-screen design of the display device.
  • a part of the first pixel unit 101 or a plurality of the first display areas 100a in the first display area 100a can also serve as a fill light or indicator light.
  • the display device further includes a touch panel, and the touch panel is combined with the display panel in a built-in or plug-in manner, so that the display device has a touch function.
  • the display panel includes a first display area 100a, the display panel includes: a plurality of first pixel units 101, and a plurality of the first pixel units 101 Located in the first display area 100a, each of the first pixel units 101 includes a light-transmitting area 1011 and a light-emitting device 1012 disposed adjacent to the light-transmitting area 1011; a first substrate 102, the first substrate 102 includes a first portion 102a located in the first display area 100a, the first portion 102a includes a first drive circuit 1021 and an electrical connection line 1022 located on the first drive circuit 1021; wherein, the light emitting device 1012 is mounted on the first portion 102a, the light emitting device 1012 includes an electrode 1012a facing away from the first driving circuit 1021, and the electrode 1012a is electrically connected to the first driving circuit 1021 through the electrical connection line 1022, In order to enable the display

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Abstract

本申请提供一种显示面板及其制备方法、显示装置，所述显示面板包括第一显示区；多个第一像素单元，每个第一像素单元包括透光区和发光器件；第一基板，包括安装发光器件的第一部分；发光器件的电极通过电连接线与第一驱动电路电性连接，以使显示面板实现屏下传感技术与光学显示在空间上的重合，降低显示面板的厚度。

Description

显示面板及其制备方法、显示装置 技术领域
本申请涉及显示技术领域，特别涉及一种显示面板及其制备方法、显示装置。
 背景技术
高屏占比显示装置因具有更窄的屏幕边框、更大的显示面积，可以为消费者带来更好的体验，成为显示领域的研究重点。但现有的全面屏显示装置由于屏下传感技术与光学显示无法在空间上重合，使得显示装置在设置传感器的区域仍不能实现显示；此外，为实现屏下传感技术，显示装置的厚度会受到一定影响，不利于用户的体验。因此，如何实现显示装置真正意义上的全屏显示，并减小显示装置的厚度成为研究的热点问题。
 技术问题
本申请实施例提供一种显示面板及其制备方法、显示装置，可以解决屏下传感技术与光学显示无法在空间上重合，显示装置较厚的问题。
 技术解决方案
本申请实施例提供一种显示面板，包括第一显示区，所述显示面板包括：
多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；
第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；
其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接。
在所述的显示面板中，所述发光器件为自发光显示器件。
在所述的显示面板中，所述发光器件包括次毫米发光二极管或微型发光二极管中的至少一种。
在所述的显示面板中，所述发光器件还包括安装于所述第一基板的主体，所述电极自所述主体延伸而出，所述电连接线沿所述主体的表面延伸。
在所述的显示面板中，所述电极包括自所述主体延伸而出的第一电极和第二电极；所述电连接线包括第一线和第二线，所述第一线电性连接所述第一电极和所述第一驱动电路，所述第一线沿所述主体的表面延伸，所述第二线电性连接所述第二电极和所述第一驱动电路，所述第二线沿所述主体的表面延伸。
在所述的显示面板中，所述电连接线的制备材料包括Ti、Al、Mo、ITO中的至少一种。
在所述的显示面板中，所述电连接线的截面尺寸为大于或等于100纳米且小于或等于1000纳米。
在所述的显示面板中，所述显示面板还包括与所述第一显示区相邻设置的第二显示区，所述显示面板还包括位于所述第二显示区内的多个第二像素单元，多个所述第二像素单元的发光方式与多个所述第一像素单元的发光方式不同。
在所述的显示面板中，每一所述第二像素单元为液晶显示像素单元。
在所述的显示面板中，所述第一基板还包括位于所述第二显示区内的第二部分；所述第二部分包括第二驱动电路，所述第二驱动电路用于驱动多个所述第二像素单元。
在所述的显示面板中，所述电连接线的材料与所述第二驱动电路中的导电层同层设置且材料相同。
在所述的显示面板中，所述导电层包括像素电极，所述电连接线与所述像素电极同层设置且材料相同。
在所述的显示面板中，所述显示面板还包括与所述第一基板相对设置的第二基板，所述第二基板的对应所述第二部分的部分包括彩膜单元。
在所述的显示面板中，所述显示面板还包括：
第一偏光片，位于所述第一基板远离所述第二基板的一侧，所述第一偏光片在对应所述第一部分的部分设置有过孔；
第二偏光片，位于所述第二基板远离所述第一基板的一侧。
在所述的显示面板中，所述显示面板还包括：
背光模组，位于所述第一偏光片远离所述第一基板的一侧，所述背光模组的对应所述第一部分的部分设置有过孔。
在所述的显示面板中，在俯视视角下，所述发光器件的面积小于或等于所述透光区的面积。
本申请还提供一种显示面板的制备方法，包括以下步骤：
S10：形成第一基板，所述第一基板包括第一部分和邻近所述第一部分的第二部分，所述第一部分包括第一驱动电路，所述第二部分包括第二驱动电路；
S20：在所述第一部分上形成发光器件；其中，所述发光器件包括背离所述第一驱动电路的电极；
S30：利用沉积工艺形成电连接线，所述电连接线电性连接所述电极与所述第一驱动电路；
其中，所述第一基板的第一部分对应所述显示面板的第一显示区，所述第一基板的第二部分对应所述显示面板的邻近所述第一显示区的第二显示区，所述显示面板包括位于所述第一显示区内的多个第一像素单元和位于所述第二显示区内的多个第二像素单元，多个所述第一像素单元和多个所述第二像素单元的发光方式不同，每一所述第一像素单元包括透光区和与所述透光区相邻设置的所述发光器件，多个所述第二像素单元被所述第二驱动电路驱动。
在所述的制备方法中，所述发光器件包括次毫米发光二极管或微型发光二极管中的至少一种。
本申请还提供一种显示装置，包括所述的显示面板以及传感器；所述显示面板包括：
多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；
第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；
其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接；所述传感器正对所述第一显示区。
在所述的显示装置中，所述传感器包括指纹识别传感器、摄像头、结构光传感器、飞行时间传感器、距离传感器、光线传感器中的至少一种。
 有益效果
相较于现有技术，本申请实施例提供的显示面板及其制备方法、显示装置，所述显示面板包括第一显示区，所述显示面板包括：多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接，以使所述显示面板实现屏下传感技术与光学显示在空间上的重合，降低所述显示面板的厚度。采用所述的显示面板制得的显示装置，亦可实现屏下传感技术与光学显示在空间上的重合，降低所述显示装置的厚度。
 附图说明
图1A~图1C为本申请的实施例提供的显示面板的结构示意图；
图1D~图1E为本申请实施例提供的第一基板的第一部分的结构示意图；
图2A~图2B为本申请的实施例提供的第一像素单元的俯视图；
图3A~图3F为本申请的实施例提供的显示面板的俯视图；
图4为本申请的实施例提供的显示面板的制备流程图；
图5A~图5D为本申请的实施例提供的显示面板的制备过程示意图；
图6为本申请的实施例提供的显示装置的结构示意图。
附图标记：
100a-第一显示区；100b-第二显示区；102a-第一部分；102b-第二部分；
101a-第一子像素；1012a-电极；1012b-第一电极；1012c-第二电极；
1013a-第一色转换单元；1013b-第二色转换单元；1041a-子彩膜单元；
1022a-第一线；1022b-第二线；1012d-主体；1012e-发光器件；
101-第一像素单元；1011-透光区、1012-发光器件；1013-色转换膜；
102-第一基板；1021-第一驱动电路；1022-电连接线；1023-第二驱动电路；
103-第二像素单元；104-第二基板；1041-彩膜单元；1051-第一偏光片；1052-第二偏光片；106-液晶分子；107-框胶；108-背光模组；601-传感器。
 本发明的实施方式
为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
具体的，请参阅图1A~图1C，其为本申请的实施例提供的显示面板的结构示意图；如图1D~图1E所示，其为本申请的实施例提供的第一基板的第一部分的结构示意图；如图2A~图2B所示，其为本申请的实施例提供的第一像素单元的俯视图；如图3A~图3F所示，其为本申请的实施例提供的显示面板的俯视图；所述显示面板，包括第一显示区100a，所述显示面板包括：
多个第一像素单元101，多个所述第一像素单元101位于所述第一显示区100a内，每个所述第一像素单元101包括透光区1011和与所述透光区1011相邻设置的发光器件1012；
第一基板102，所述第一基板102包括位于所述第一显示区100a内的第一部分102a，所述第一部分102a包括第一驱动电路1021以及位于所述第一驱动电路1021之上的电连接线1022；
其中，所述发光器件1012安装于所述第一部分102a，所述发光器件1012包括背离所述第一驱动电路1021的电极1012a，所述电极1012a通过所述电连接线1022与所述第一驱动电路1021电性连接。
由于每个所述第一像素单元101包括所述透光区1011和所述发光器件1012，因此，所述透光区1011使得所述第一显示区100a具备一定的透过率，所述透光区1011可以为实现屏下传感技术提供信号传输的通道，而所述发光器件1012可以保证所述第一像素单元101的正常显示，使得所述显示面板实现了屏下传感技术与光学显示在空间上的重合，便于所述显示面板实现全面屏设计。
为使所述显示面板在所述第一显示区100a具有透明显示的功能，在俯视视角下，所述发光器件1012的面积小于或等于所述透光区1011的面积，以使所述第一显示区100a具备一定的光透过率，如图2A~图2B所示。
具体地，所述第一像素单元101包括多个第一子像素101a，每个所述第一子像素101a包括所述透光区1011和所述发光器件1012，在每个所述第一子像素101a内，所述透光区1011的面积占所述第一子像素101a的面积的50%~99%。
进一步地，每个所述发光器件1012的尺寸为大于或等于1微米且小于或等于500微米；每个所述第一子像素101a的尺寸为大于或等于10微米且小于或等于1000微米；其中，所述发光器件1012的尺寸指在俯视视角下所述发光器件1012的长或宽；与之相似地，所述第一子像素101a的尺寸指在俯视视角下所述第一子像素101a的长或宽。
请继续参阅图1A~图1C和图2A~图2B，所述发光器件1012为自发光显示器件；具体地，所述发光器件1012包括次毫米发光二极管或微型发光二极管中的至少一种；进一步地，所述发光器件1012为微型发光二极管，以使所述第一显示区100a在具有较小的发光面积时，仍能保证所述第一显示区100a的显示质量不受影响。所述发光器件1012以内置式形式设置于所述第一基板102的所述第一部分102a，可以避免采用外挂式形式设置所述发光器件1012时，所述显示面板在所述第一显示区100a出现画面悬浮的问题。
请继续参阅图1A~图1C和图1D~图1E，所述发光器件1012还包括安装于所述第一基板102的主体1012d，所述电极1012a自所述主体1012d延伸而出，所述电连接线1022沿所述主体1012d的表面延伸，所述电连接线1022的截面尺寸为大于或等于100纳米且小于或等于1000纳米，以降低所述显示面板的厚度。
进一步地，所述电极1012a包括自所述主体1012d延伸而出的第一电极1012b和第二电极1012c；所述电连接线1022包括第一线1022a和第二线1022b，所述第一线1022a电性连接所述第一电极1012b和所述第一驱动电路1021，所述第一线1022a沿所述主体1012d的表面延伸；所述第二线1022b电性连接所述第二电极1012c和所述第一驱动电路1021，所述第二线1022b沿所述主体1012d的表面延伸。
所述电连接线1022的制备材料包括Ti(钛)、Al(铝)、Mo(钼)、ITO(氧化铟锡)中的至少一种；进一步地，为避免所述电连接线1022对所述第一显示区100a的透光率造成影响，所述电连接线1022的制备材料为透明金属材料；其中，所述透明金属材料包括氧化铟锡。更进一步地，所述电极1012a的制备材料与所述电连接线1022的制备材料相同；具体地，所述电极1012a的制备材料为透明金属材料；所述透明金属材料包括氧化铟锡，以保证所述第一显示区100a具有较高的透光率。
请继续参阅图1A~图1C，所述显示面板还包括与所述第一显示区100a相邻设置的第二显示区100b，所述显示面板还包括位于所述第二显示区100b内的多个第二像素单元103，多个所述第二像素单元103的发光方式与多个所述第一像素单元101的发光方式不同。
具体地，每一所述第二像素单元103为液晶显示像素单元。
所述第一基板102还包括位于所述第二显示区100b内的第二部分102b；所述第二部分102b包括第二驱动电路1023，所述第二驱动电路1023用于驱动多个所述第二像素单元103。
为简化制程，所述电连接线1022的材料与所述第二驱动电路1023中的导电层同层设置且材料相同；进一步地，所述导电层包括像素电极，所述电连接线1022与所述像素电极同层设置且材料相同。
所述显示面板还包括与所述第一基板102相对设置的第二基板104，所述第二基板104的对应所述第二部分102b的部分包括彩膜单元1041，如图1A所示。
在图1A所示的显示面板中，所述发光器件1012包括红色发光器件、绿色发光器件、蓝色发光器件等以实现所述显示面板的全彩显示。
若多个所述发光器件1012发出的光为单色光，则所述显示面板可利用色转换膜实现全彩显示。
具体地，请继续参阅图1B和图1C，所述显示面板还包括位于所述发光器件1012远离所述第一基板102一侧的色转换膜1013，所述色转换膜1013包括第一色转换单元1013a和第二色转换单元1013b；其中，所述第一色转换单元1013a将所述发光器件1012发出的第一波长的光转换为第二波长的光，所述第二色转换单元1013b用于透射所述发光器件1012发出的光。即若所述发光器件1012为蓝色发光器件，则所述第一色转换单元1013a吸收所述发光器件1012发出的蓝光发出红光、绿光、橙光或黄光等颜色的光，而所述第二色转换单元1013b透射所述发光器件1012发出的蓝光。
进一步地，多个所述第一色转换单元1013a吸收所述发光器件1012发出的光可以不同，即多个所述第一色转换单元1013a还包括第一子色转换单元和第二子色转换单元，所述第一子色转换单元吸收所述发光器件1012发出的光与所述第二子色转换单元吸收所述发光器件1012发出的光的颜色不同。
为节约制程，所述色转换膜1013可位于所述第二基板104内；更进一步地，所述色转换膜1013的所述第一色转换单元1013a和所述第二色转换单元1013b可以与所述第二基板104上的所述彩膜单元1041同层制备。即所述第二基板104的对应所述第一部分102a的部分包括所述第一色转换单元1013a和所述第二色转换单元1013b，如图1C所示。
为避免所述色转换膜1013对所述透光区1011造成遮挡，影响透光率，所述色转换膜1013中的所述第一色转换单元1013a和所述第二色转换单元1013b的面积等于所述发光器件1012的面积，且在俯视视角下，所述第一色转换单元1013a和所述第二色转换单元1013b分别覆盖与之对应的所述发光器件1012，如图2B所示。
请继续参阅图1A~图1C，为避免所述第一显示区100a和所述第二显示区100b在交界处出现显示中断或显示不连续等问题，在所述第一显示区100a和所述第二显示区100b的交界处，所述第一像素单元101与所述第二像素单元103相邻设置。
具体地，所述第二像素单元103包括对应的所述彩膜单元1041，在俯视视角下，所述第一像素单元101与所述彩膜单元1041在所述第一显示区100a和所述第二显示区100b交界处相接。
进一步地，在图1A所示的显示面板中，所述彩膜单元1041中的靠近所述第一显示区100a和所述第二显示区100b交界处的子彩膜单元1041a与所述发光器件1012中靠近所述第一显示区100a和所述第二显示区100b交界处的发光器件1012e的颜色相同，即若所述子彩膜单元1041a为红色彩膜单元，则所述发光器件1012e也为红色发光器件。与之相似地，在图1B~图1C所示的显示面板中，所述彩膜单元1041中的靠近所述第一显示区100a和所述第二显示区100b交界处的子彩膜单元1041a与所述色转换膜1013中靠近所述第一显示区100a和所述第二显示区100b交界处的所述第一色转换单元1013a或第二色转换单元1013b a的颜色相同。
请继续参阅图1A~图1C，所述显示面板还包括：
第一偏光片1051，位于所述第一基板102远离所述第二基板104一侧，所述第一偏光片1051的对应所述第一部分102a的部分设置有过孔；
第二偏光片1052，位于所述第二基板104远离所述第一基板102的一侧。
所述显示面板还包括位于所述第一基板102与所述第二基板104之间的液晶分子106和框胶107。
由于所述第一偏光片1051在对应所述第一部分102a的部分设置有过孔，所以，所述液晶分子1061在所述第一显示区100a虽改变了光的偏振状态，但因只受到所述第二偏光片1052作用而无法实现调光功能，因此，所述液晶分子1061不会对所述第一显示区100a的显示造成影响。
可以理解的，所述第二偏光片1052在对应所述第一部分102a的部分也可设置所述过孔，如图1C所示。
请继续参阅图1A~图1C，所述显示面板还包括：
背光模组108，位于所述第一偏光片1051远离所述第一基板102的一侧，所述背光模组108的对应所述第一部分102a的部分设置有过孔。
请继续参阅图1A~图1C，为保证所述透光区1011的透光率，所述第一基板102的制备材料为高透光率材料，包括玻璃、无色聚酰亚胺材料、亚克力材料等。
所述第一基板102还包括衬底、缓冲层等未示出部分；所述第一驱动电路1021还包括第一薄膜晶体管、第一控制线路等未示出部分。所述第二驱动电路1023还包括第二薄膜晶体管、第二控制线路等未示出部分。
所述第一驱动电路1021驱动所述发光器件1012的方式包括有源选址驱动方式和无源选址驱动方式；具体地，所述有源选址方式包括采用低温多晶硅技术、非晶硅技术、氧化铟镓锌技术的驱动方式；在所述第一显示区100a的面积较小的情况下(如小于10*10mm)，所述第一驱动电路1021采用无源选址驱动方式驱动所述发光器件1012，以使所述显示面板获得较高的光透过率。
由于所述第一显示区100a与所述第二显示区100b采用不同的发光方式进行显示，所以所述第一薄膜晶体管和所述第二薄膜晶体管在尺寸上可以存在差别，所述第一薄膜晶体管和所述第二薄膜晶体管的尺寸可分别根据所述第一显示区100a和所述第二显示区100b的设计需求进行光电匹配得到，在此对其不再进行赘述。
所述第一显示区100a和所述第二显示区100b之间的显示亮度差异可以根据后续的软件算法进行亮度匹配；所述第一显示区100a和所述第二显示区100b之间的显示精度差异可以通过分辨率的匹配设计进行优化，在此对其不再进行赘述。
在图1A~图1C所示的显示面板中，均以多个所述第二像素单元103的发光方式与多个所述第一像素单元101的发光方式不同为例进行说明。可以理解的，每一所述第二像素单元103也可为与所述第一像素单元101采用相同的发光方式，即所述第二像素单元103包括多个第二发光器件，所述第二发光器件包括有机发光二极管、次毫米发光二极管或微型发光二极管中的至少一种。
进一步地，在所述第一显示区100a和所述第二显示区100b的交界处，所述第一像素单元101与所述第二像素单元103相邻设置。
具体地，在俯视视角下，所述第一像素单元101与所述第二像素单元103在所述第一显示区100a和所述第二显示区100b交界处相接。
进一步地，所述第二发光器件中的靠近所述第一显示区100a和所述第二显示区100b交界处的第二子发光器件与所述发光器件1012中靠近所述第一显示区100a和所述第二显示区100b交界处的发光器件1012e的颜色相同，即若所述第二子发光器件为绿色发光器件，则所述发光器件1012e也为绿色发光器件。
请继续参阅图3A~图3F，在俯视视角下，所述第一显示区100a可以位于所述显示面板上部，也可位于所述显示面板的下部，所述第一显示区100a的位置可根据实际的设计需求进行设计，在此不再对其进行赘述。
在俯视视角下，所述第一显示区100a的形状包括圆形、多边形中的一种或组合，所述第一显示区100a的具体形状也可根据实际的设计需求进行设计，在此不再对其进行赘述。
此外，所述显示面板还可包括多个所述第一显示区100a，多个所述第一显示区100a与所述第二显示区100b相邻设置，多个所述第一显示区100a的具体分布方式根据实际的需求进行设计，在此不再对其进行赘述。
图3A~图3F所示的显示面板的形状、所述第一显示区100a、所述第二显示区100b的形状、位置等均为示例性说明，并不用于限制本申请，本领域的相关技术人员可根据实际需求进行设计。
请参阅图4，其为本申请的实施例提供的显示面板的制备流程图；如图5A~图5D所示，其为本申请的实施例提供的显示面板的制备过程示意图。
本申请还提供一种显示面板的制备方法，包括以下步骤：
S10：形成第一基板102，所述第一基板102包括第一部分102a和邻近所述第一部分102a的第二部分102b，所述第一部分102a包括第一驱动电路1021，所述第二部分102b包括第二驱动电路1023，如图5A所示；
S20：在所述第一部分102a上形成发光器件1012；其中，所述发光器件1012包括背离所述第一驱动电路1021的电极1012a，如图5B所示；
S30：利用沉积工艺形成电连接线1022，所述电连接线1022电性连接所述电极1012a与所述第一驱动电路1021，如图5C所示；
其中，所述第一基板102的第一部分102a对应所述显示面板的第一显示区100a，所述第一基板102的第二部分100b对应所述显示面板的邻近所述第一显示区100a的第二显示区100b，所述显示面板包括位于所述第一显示区100a内的多个第一像素单元和位于所述第二显示区100b内的多个第二像素单元103，多个所述第一像素单元和多个所述第二像素单元103的发光方式不同，每一所述第一像素单元包括透光区1011和与所述透光区1011相邻设置的所述发光器件1012，多个所述第二像素单元103被所述第二驱动电路1023驱动。
其中，所述发光器件1012包括次毫米发光二极管或微型发光二极管中的至少一种。
进一步地，所述发光器件1012为微型发光二极管；在所述步骤S20中，通过电磁力，静电力，范德华力等巨量转移方式将生长基板或中间基板上的所述发光器件1012转移至所述第一驱动电路1021上。所述发光器件1012的厚度为大于或等于1微米且小于或等于5微米；进一步地，所述发光器件1012的厚度等于3微米。
所述第一显示区100a的面积小于或等于30*30mm；进一步地，所述第一显示区100a的面积小于或等于10*10mm，以便在所述第一部分102a采用巨量转移的方式制备所述发光器件1012时，在所述第一部分102a具有较好的转印良率，并实现成本的控制。此外，所述第一部分102a所需制备的所述发光器件1012的数目也会对所述发光器件1012的良率及产品成本造成影响，在所述第一部分102a所需制备的所述发光器件1012的数目较少，所述第一显示区100a的面积较小的情况下，在所述第一部分102采用巨量转移的方式制备所述发光器件1012时的良率也较高，对成本的控制也较有利。所述第一部分102a所需制备的所述发光器件1012的数目由设计需求确定，本领域相关技术人员可根据实际需求进行设置，在此对其不进行赘述。
所述电连接线1022通过沉积工艺形成，所述沉积工艺包括电镀、化学镀、印镀、蒸渡、溅镀等方式。具体地，在步骤S30中，在所述发光器件1012远离所述第一基板102的一侧形成整面的电连接线层，然后采用黄光制程制得所述电连接线1022。或在步骤S30中，提供一金属掩膜板，利用所述金属掩膜板在所述发光器件1012和所述第一驱动电路1021表面形成所述电连接线1022。
此外，所述电连接线1022还可采用光阻剥离的方式形成；具体地，在所述步骤S30中，在所述发光器件1012远离所述第一基板102的一侧形成整面的光阻层，然后对所述光阻层进行图形化，再利用沉积工艺制得所述电连接线1022，最后去除剩余的所述光阻层。
所述电连接线1022的材料可以与第二驱动电路1023中的导电层同层设置且材料相同；所述电连接线1022的制备材料包括Ti(钛)、Al(铝)、Mo(钼)、ITO(氧化铟锡)中的至少一种。
由于所述电连接线1022采用沉积工艺形成，所述电连接线1022的厚度可以保持在纳米级厚度；具体地，所述电连接线1022的截面尺寸为大于或等于100纳米且小于或等于1000纳米。若所述第二像素单元1023为液晶显示单元时，所述第一基板102与所述第二基板104对组成盒后的盒间距为大于或等于1微米且小于或等于5微米；进一步地，所述第一基板102与所述第二基板104对组成盒后的盒间距等于3微米，以降低对所述显示面板透光率的影响。
若所述第二像素单元1023为液晶显示单元，则所述制备方法还包括以下步骤：
S40：提供第二基板104，将所述第二基板104与所述第一基板102对组成盒，并在所述第一基板102和所述第二基板104之间注入液晶分子106；其中，所述第二基板104的对应所述第二部分102b的部分包括彩膜单元1041；所述液晶分子106位于框胶107界定的区域内；
S50：在所述第一基板102远离所述第二基板104的一侧制备第一偏光片1051，在所述第二基板104远离所述第一基板102的一侧形成第二偏光片1052；其中，所述第一偏光片1051在对应所述第一部分102a的部分设置有过孔；
S60：在所述第一偏光片1051远离所述第二基板104的一侧制备背光模组108；其中，所述背光模组108在对应所述第一部分102a的部分设置有过孔，如图5D所示。
现有制程中一般会在一块大板上形成多个所述第一基板102，但在所述发光器件1012为微型二极管时，在所述大板上采用巨量转移技术形成所述发光器件1012会存在一定的难度。因此，可先在所述大板对应所述第一基板102的区域内形成所述第一驱动电路1021和所述第二驱动电路1023，然后再按设计规格在所述大板上切割出所需的所述第一基板102；之后采用巨量转移技术在所述第一基板102的所述第一部分102a处形成所述发光器件1012；再采用沉积工艺形成所述电连接线1022；最后，将按设计规格切割得到的所述第二基板104通过芯片级的对组成盒技术与所述第一基板102对组成盒，以降低制程难度，保证产品良率。
请参阅图6，其为本申请的实施例提供的显示装置的结构示意图，本申请还提供一种显示装置，包括所述的显示面板或如所述的制备方法制得的显示面板；以及传感器601，所述传感器601正对所述第一显示区100a。
所述传感器601包括指纹识别传感器、摄像头、结构光传感器、飞行时间传感器、距离传感器、光线传感器等。
在任意时刻，所述传感器601可以通过所述透光区1011采集信号，以实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等各种屏下传感方案；而所述发光器件1012可保证所述第一显示区100a的正常显示，使得所述显示面板实现了屏下传感技术与光学显示在空间上的重合，实现了显示装置的全面屏设计。此外，所述第一显示区100a中的部分所述第一像素单元101或多个所述第一显示区100a可以兼做补光灯或指示灯等功能。
进一步地，所述显示装置还包括触控面板，所述触控面板以内置式或外挂式的方式与所述显示面板结合，以使所述显示装置具有触控功能。
本申请实施例提供的显示面板及其制备方法、显示装置，所述显示面板包括第一显示区100a，所述显示面板包括：多个第一像素单元101，多个所述第一像素单元101位于所述第一显示区100a内，每个所述第一像素单元101包括透光区1011和与所述透光区1011相邻设置的发光器件1012；第一基板102，所述第一基板102包括位于所述第一显示区100a内的第一部分102a，所述第一部分102a包括第一驱动电路1021以及位于所述第一驱动电路1021之上的电连接线1022；其中，所述发光器件1012安装于所述第一部分102a，所述发光器件1012包括背离所述第一驱动电路1021的电极1012a，所述电极1012a通过所述电连接线1022与所述第一驱动电路1021电性连接，以使所述显示面板实现屏下传感技术与光学显示在空间上的重合，降低所述显示面板的厚度。采用所述的显示面板制得的显示装置，亦可实现屏下传感技术与光学显示在空间上的重合，降低所述显示装置的厚度。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例所提供的显示面板及其制备方法、显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (20)

  1. 一种显示面板，包括第一显示区，其中，所述显示面板包括：
    多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；
    第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；
    其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接。
  2. 根据权利要求1所述的显示面板，其中，所述发光器件为自发光显示器件。
  3. 根据权利要求2所述的显示面板，其中，所述发光器件包括次毫米发光二极管或微型发光二极管中的至少一种。
  4. 根据权利要求1所述的显示面板，其中，所述发光器件还包括安装于所述第一基板的主体，所述电极自所述主体延伸而出，所述电连接线沿所述主体的表面延伸。
  5. 根据权利要求4所述的显示面板，其中，所述电极包括自所述主体延伸而出的第一电极和第二电极；所述电连接线包括第一线和第二线，所述第一线电性连接所述第一电极和所述第一驱动电路，所述第一线沿所述主体的表面延伸；所述第二线电性连接所述第二电极和所述第一驱动电路，所述第二线沿所述主体的表面延伸。
  6. 根据权利要求1所述的显示面板，其中，所述电连接线的制备材料包括Ti、Al、Mo、ITO中的至少一种。
  7. 根据权利要求1所述的显示面板，其中，所述电连接线的截面尺寸为大于或等于100纳米且小于或等于1000纳米。
  8. 根据权利要求1所述的显示面板，其中，所述显示面板还包括与所述第一显示区相邻设置的第二显示区，所述显示面板还包括位于所述第二显示区内的多个第二像素单元，多个所述第二像素单元的发光方式与多个所述第一像素单元的发光方式不同。
  9. 根据权利要求8所述的显示面板，其中，每一所述第二像素单元为液晶显示像素单元。
  10. 根据权利要求9所述的显示面板，其中，所述第一基板还包括位于所述第二显示区内的第二部分；所述第二部分包括第二驱动电路，所述第二驱动电路用于驱动多个所述第二像素单元。
  11. 根据权利要求10所述的显示面板，其中，所述电连接线的材料与所述第二驱动电路中的导电层同层设置且材料相同。
  12. 根据权利要求11所述的显示面板，其中，所述导电层包括像素电极，所述电连接线与所述像素电极同层设置且材料相同。
  13. 根据权利要求10所述的显示面板，其中，所述显示面板还包括与所述第一基板相对设置的第二基板，所述第二基板的对应所述第二部分的部分包括彩膜单元。
  14. 根据权利要求13所述的显示面板，其中，所述显示面板还包括：
    第一偏光片，位于所述第一基板远离所述第二基板的一侧，所述第一偏光片的对应所述第一部分的部分设置有过孔；
    第二偏光片，位于所述第二基板远离所述第一基板的一侧。
  15. 根据权利要求14所述的显示面板，其中，所述显示面板还包括：
    背光模组，位于所述第一偏光片远离所述第一基板的一侧，所述背光模组的对应所述第一部分的部分设置有过孔。
  16. 根据权利要求1所述的显示面板，其中，在俯视视角下，所述发光器件的面积小于或等于所述透光区的面积。
  17. 一种显示面板的制备方法，其中，包括以下步骤：
    S10：形成第一基板，所述第一基板包括第一部分和邻近所述第一部分的第二部分，所述第一部分包括第一驱动电路，所述第二部分包括第二驱动电路；
    S20：在所述第一部分上形成发光器件；其中，所述发光器件包括背离所述第一驱动电路的电极；
    S30：利用沉积工艺形成电连接线，所述电连接线电性连接所述电极与所述第一驱动电路；
    其中，所述第一基板的第一部分对应所述显示面板的第一显示区，所述第一基板的第二部分对应所述显示面板的邻近所述第一显示区的第二显示区，所述显示面板包括位于所述第一显示区内的多个第一像素单元和位于所述第二显示区内的多个第二像素单元，多个所述第一像素单元和多个所述第二像素单元的发光方式不同，每一所述第一像素单元包括透光区和与所述透光区相邻设置的所述发光器件，多个所述第二像素单元被所述第二驱动电路驱动。
  18. 根据权利要求17所述的制备方法，其中，所述发光器件包括次毫米发光二极管或微型发光二极管中的至少一种。
  19. 一种显示装置，其中，包括显示面板及传感器；所述显示面板包括：
    多个第一像素单元，多个所述第一像素单元位于所述第一显示区内，每个所述第一像素单元包括透光区和与所述透光区相邻设置的发光器件；
    第一基板，所述第一基板包括位于所述第一显示区内的第一部分，所述第一部分包括第一驱动电路以及位于所述第一驱动电路之上的电连接线；
    其中，所述发光器件安装于所述第一部分，所述发光器件包括背离所述第一驱动电路的电极，所述电极通过所述电连接线与所述第一驱动电路电性连接；所述传感器正对所述第一显示区。
  20. 根据权利要求19所述的显示装置，其中，所述传感器包括指纹识别传感器、摄像头、结构光传感器、飞行时间传感器、距离传感器、光线传感器中的至少一种。
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CN111596484A (zh) * 2020-06-01 2020-08-28 武汉华星光电技术有限公司 一种彩膜基板和显示面板
CN111596485A (zh) * 2020-06-08 2020-08-28 武汉华星光电技术有限公司 一种彩膜基板、显示面板、显示装置

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