WO2021241696A1 - Filtre de fréquence - Google Patents

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Publication number
WO2021241696A1
WO2021241696A1 PCT/JP2021/020236 JP2021020236W WO2021241696A1 WO 2021241696 A1 WO2021241696 A1 WO 2021241696A1 JP 2021020236 W JP2021020236 W JP 2021020236W WO 2021241696 A1 WO2021241696 A1 WO 2021241696A1
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Prior art keywords
layer
piezoelectric
frequency filter
frequency
polarization
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PCT/JP2021/020236
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English (en)
Japanese (ja)
Inventor
隆彦 柳谷
紗里那 木下
裕友 佐藤
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学校法人早稲田大学
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Publication of WO2021241696A1 publication Critical patent/WO2021241696A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators

Definitions

  • the present invention relates to a frequency filter used in a base station of a mobile phone or the like for filtering a frequency for high frequency power.
  • high frequency power and “high frequency voltage” described later refer to the power and voltage of the high frequency signal obtained by receiving the electromagnetic wave and / or the high frequency signal used when transmitting the electromagnetic wave, respectively.
  • the frequencies of such high frequency power and high frequency voltage are typically included in the range of 50MHz to 30GHz.
  • the terminal has extracted high-frequency power having a specific frequency by passing an electromagnetic wave having a large number of frequencies received by an antenna through a high-frequency power frequency filter.
  • a frequency filter for such high frequency power a surface acoustic wave (SAW) filter provided so as to mesh a pair of comb-shaped electrodes on the surface of the piezoelectric thin film, or a pair on both sides of the piezoelectric thin film.
  • SAW surface acoustic wave
  • BAW Bulk Acoustic Wave
  • SAW filters and BAW filters have low withstand voltage resistance between electrodes, and cannot perform frequency filtering for high-frequency power, which is required to be processed by base stations. Therefore, conventionally, in the base station of a mobile phone, frequency filtering is performed by using a cavity resonator.
  • the SAW filter and BAW filter can be miniaturized to about several mm square
  • the cavity resonator has a size of several hundred mm square, and it is difficult to miniaturize it.
  • it has been required to provide a small base station in an urban area where electromagnetic waves from a large base station are difficult to reach, such as a place in the shadow of a building. If it is used, the occupied space of the base station becomes large, which causes a problem that the installation cost increases.
  • the problem to be solved by the present invention is a frequency filter using a piezoelectric thin film, which can be miniaturized, and is a frequency capable of filtering a frequency for a large amount of high frequency power handled by a base station of a mobile phone. To provide a filter.
  • the frequency filter according to the present invention made to solve the above problems is a)
  • the first layer which is a piezoelectric layer made of a first piezoelectric material and whose polarization is oriented in a predetermined direction
  • the first layer which is made of a second piezoelectric material and whose polarization is oriented in a direction perpendicular to or parallel to the first layer of polarization.
  • a second layer composed of a piezoelectric layer or a non-piezoelectric layer made of a non-piezoelectric insulating material whose components are oriented 180 ° differently from the component in the said direction in the polarization of the first layer is alternately repeated one layer at a time.
  • the thickness d 1 of the first layer and the thickness d 2 of the second layer are the sound velocity v 1 in the first layer and the sound velocity v in the second layer.
  • the frequency filter is characterized in that the predetermined number is set so as to have a power resistance to a high frequency power of 10 W.
  • each first layer provided every other layer among the layers constituting the laminated body has a specific plurality of frequencies determined by the thickness d 1 and the speed of sound v 1 among the many frequencies due to the piezoelectric effect. , Vibrates in the same phase for each frequency.
  • the second layer vibrates as follows in each case of the piezoelectric layer and the non-piezoelectric layer.
  • the second layer When the second layer is composed of a piezoelectric layer, it vibrates at a specific plurality of frequencies determined by the thickness d 2 and the speed of sound v 2 among the many frequencies mentioned above due to the piezoelectric effect.
  • d 2 by having d 2 have a value of (v 2 / v 1 ) d 1 or close to it (0.5 to 2.0 times), each second layer has the specific plurality of frequencies (ie, the first layer). At the same frequency), it vibrates in the same phase for each frequency.
  • the component in the direction perpendicular to or parallel to the first layer of the polarization points in a direction 180 ° different from the component in the direction in the polarization of the first layer, the second layer with respect to the vibration direction of the first layer.
  • the vibration phase of is opposite to that of the first layer (180 ° different).
  • the vibrations of the first layer and the second layer are combined, and the entire laminated body has a plurality of wave numbers that are half-integers per layer, and resonance having the specific multiple frequencies corresponding to the plurality of waves. Occurs.
  • the second layer When the second layer is composed of a non-piezoelectric layer, the second layer receives the vibration from the first layer, although the vibration due to the piezoelectric effect does not occur, and the second layer has the same specific plurality as the first layer. It vibrates at a frequency. Since d 2 has a value of (v 2 / v 1 ) d 1 or close to it (0.5 to 2.0 times), the vibration having the frequency of the first layer satisfies the resonance condition in the second layer. As a result, the resonance having the specific plurality of frequencies corresponding to the plurality of wave numbers, which is a half-integer per layer, occurs in the entire layered body as in the case where the second layer is composed of the piezoelectric layer.
  • the laminate is formed at a specific plurality of frequencies among the large number of frequencies. Resonate. As a result, only the high frequency power having the specific plurality of frequencies is amplified, so that the product according to the present invention functions as a frequency filter for the high frequency power.
  • Frequency filtering can be performed for high frequency power having.
  • the maximum output of electromagnetic waves transmitted by a terminal is about 1 W, whereas that of a base station is 10 to 100 W (see, for example, Patent Document 2). Therefore, in the frequency filter according to the present invention, the predetermined number, that is, the total number of layers of the first layer and the second layer is set so as to have a power resistance of 10 W (or more) according to the output of electromagnetic waves. There is. The larger the number of layers, the higher the power resistance. Further, since the frequency to be filtered is determined by the thickness per layer, there is no effect even if the number of layers is increased.
  • the power resistance is generally determined on the assumption that a predetermined power is continuously input for a certain period in consideration of deterioration during use.
  • this predetermined period shall be at least 3 years.
  • the second piezoelectric material When the second piezoelectric material is used as the material of the second layer, the second piezoelectric material may be the same material as the first piezoelectric material or may be a different material.
  • the non-piezoelectric insulating material When the non-piezoelectric insulating material is used as the material of the second layer, the insulating material may be a layer made of an insulating material other than a piezoelectric material, or a material capable of producing piezoelectricity. The polarization of something may be oriented in a random direction within the second layer so that the entire second layer does not generate piezoelectricity.
  • the second layer is made of a non-piezoelectric layer, unlike the case where the second layer is made of a piezoelectric layer, it is not necessary to adjust the relationship between the polarization directions of the first layer 211 and the second layer 212 at the time of production. It can be produced more easily than the case where it is formed.
  • the frequency filter according to the present invention further includes an acoustic Bragg reflector on one side of the pair of electrodes.
  • An acoustic Bragg reflector is an alternating stack of two types of layers with different acoustic impedances.
  • a laminated body in which a first layer which is a piezoelectric layer and a second layer composed of a non-piezoelectric layer made of a non-piezoelectric insulating material are alternately laminated one by one.
  • the frequency filter provided has not been known so far.
  • the non-piezoelectric layer as the second layer in this way, it is not necessary to control the second layer so that the second layer is polarized in a predetermined direction at the time of production, so that the laminated body can be easily produced. In this case, even if the power resistance is lower than that required for a frequency filter for a mobile phone base station, it can be used as a frequency filter in other applications.
  • the first layer which is a piezoelectric layer made of a first piezoelectric material and whose polarization is oriented in a predetermined direction
  • the second layer which is a non-piezoelectric layer made of a non-piezoelectric insulating material, are alternately alternated. It is a product obtained by repeating one layer at a time and stacking a predetermined number of layers, and the thickness d 1 of the first layer and the thickness d 2 of the second layer are the sound velocity v 1 in the first layer and the second layer.
  • the predetermined one direction can be any direction.
  • the graph which shows the result of having obtained the impedance by experiment and calculation about the frequency filter of the modification of 1st Embodiment.
  • the schematic diagram which shows the 2nd Embodiment of the frequency filter for the base station of the mobile phone which concerns on this invention.
  • frequency filter for a mobile phone base station according to the present invention
  • FIG. 1 shows the configuration of the frequency filter 10 of the first embodiment.
  • the first layer 111 and the second layer 112 are alternately repeated one layer at a time, and a predetermined number of laminated bodies 11 and the laminated body 11 are sandwiched in the stacking direction (vertical direction in FIG. 1). It has a first electrode 121 and a second electrode 122 provided as described above.
  • the first layer 111 is made of a piezoelectric material. Further, in the present embodiment, the second layer 112 is also made of a piezoelectric material.
  • the piezoelectric material of the first layer 111 is referred to as a first piezoelectric material, and the piezoelectric material of the second layer 112 is referred to as a second piezoelectric material.
  • the first piezoelectric material and the second piezoelectric material may be the same piezoelectric material or may be different piezoelectric materials from each other.
  • the first piezoelectric material and the second piezoelectric material include zinc oxide (ZnO), aluminum nitride (AlN), and AlScN (Al 1-x Sc x) in which a part of Al (aluminum) in aluminum nitride is replaced with Sc (scandium).
  • the first layer 111 and the second layer 112 each have polarization in the directions described below.
  • the direction of the polarization P 1 of the first layer 111 may be perpendicular to the first layer 111, may be parallel to the first layer 111, and may be inclined with respect to the first layer 111 (that is, a direction that is neither parallel nor perpendicular to the first layer 111). You may be facing).
  • Direction of polarization P 2 of the second layer 112 the parallel component of the polarization P 1 of the parallel component (parallel component) in the first layer 111 and second layer 112 of the polarization P 2 P 2 // first layer 111
  • the direction is 180 ° different from P 1 // (see FIG. 2), or the component (vertical component) P 2 ⁇ perpendicular to the first layer 111 and the second layer 112 of the polarization P 2 is the first layer 111.
  • the direction should be 180 ° different from the vertical component P 1 ⁇ of the polarization P 1.
  • FIG. 1 and 2 show an example in which the polarizations P 1 and P 2 are both inclined (neither parallel nor vertical) with respect to the first layer 111 and the second layer 112, the polarization P 1 is shown. And / or P 2 may be parallel to the first layer 111 and the second layer 112, and the polarizations P 1 and / or P 2 may be perpendicular to the first layer 111 and the second layer 112. You may.
  • the thickness d 2 of the second layer 112 shall be within the range of 0.5 ⁇ (v 2 / v 1 ) times to 2.0 ⁇ (v 2 / v 1 ) d 1 times the thickness d 1 of the first layer 111.
  • v 1 is the speed of sound in the first layer 111
  • v 2 is the speed of sound in the second layer 112.
  • v 1 v 2 is usually obtained, so d 2 may be 0.5 to 2.0 times d 1 and is typically obtained.
  • the first layer 111 and the second layer 112 may have the same thickness.
  • the first layer 111 and the second layer 112 are alternately repeated one layer at a time as described above, and a predetermined number of layers are laminated in total.
  • the number of layers of 111 and the second layer 112 is determined. Satisfying such power resistance can be confirmed by conducting simulations and preliminary experiments.
  • the number of layers of the laminated body 11 is large in order to sufficiently secure the power resistance of 10 W (or more), but if it is too large, it takes time and effort to manufacture, so it is appropriately determined in consideration of these. Just do it.
  • the first electrode 121 and the second electrode 122 correspond to the above pair of electrodes.
  • the materials of the first electrode 121 and the second electrode 122 are not particularly limited as long as they have conductivity.
  • FIG. 3 shows a magnetron sputtering apparatus 30 for manufacturing the frequency filter 10.
  • the magnetron sputtering apparatus 30 has a vacuum container 31 whose inside is exhausted by a vacuum pump (not shown).
  • the vacuum container 31 includes a magnetron electrode 32 and a substrate holder 33 inclined with respect to the upper surface of the magnetron electrode 32.
  • a plate-shaped target T as a material for each layer of the frequency filter 10 is placed.
  • a high frequency power supply 34 is connected to the magnetron electrode 32 via a matching box 341.
  • the substrate holder 33 is made of a plate-shaped conductor and is grounded. At one end of the substrate holder 33, a cooling mechanism 35 for cooling the one end of the substrate holder 33 with cooling water is provided.
  • a gas introduction port (not shown) is provided in the vacuum vessel 31.
  • the first layer 111 and / or the second layer 112 made of AlN or AlScN is produced, the target of Al or Sc is used, and nitrogen gas is introduced into the vacuum vessel 31 from the gas inlet at the time of production. ..
  • the substrate S is attached to the substrate holder 33, and the target TM made of metal is placed on the upper surface of the magnetron electrode 32. By sputtering the target TM in this state, the first electrode 121 is manufactured on the surface of the substrate S (FIG. 4A).
  • the target T1 which is the material of the first layer 111 is placed on the upper surface of the magnetron electrode 32.
  • the target T1 is sputtered while cooling one end of the substrate holder 33 by the cooling mechanism 35 to produce one first layer 111 on the surface of the substrate S (FIG. 4 (b)).
  • the substrate holder 33 is inclined with respect to the upper surface of the magnetron electrode 32, and one end of the substrate holder 33 is cooled by the cooling mechanism 35, so that a temperature gradient is generated in the surface of the substrate S.
  • the polarization P 1 of the first layer 111 is inclined with respect to the first layer 111.
  • the substrate S is once removed from the substrate holder 33, the substrate S is rotated 180 ° about its normal axis, and then reattached to the substrate holder 33 (FIG. 4 (c)).
  • the target T2 which is the material of the second layer 112
  • the target T2 is placed on the upper surface of the magnetron electrode 32.
  • the target T2 is sputtered while cooling one end of the substrate holder 33 by the cooling mechanism 35 to produce one second layer 112 on the surface of the first layer 111 (FIG. 4 (d)).
  • the substrate S was rotated as described above, the substrate holder 33 was tilted as in the case of manufacturing the first layer 111, and one end of the substrate holder 33 was cooled by the cooling mechanism 35.
  • the polarization P 2 of the second layer 112 is oriented in an inclined direction with respect to the second layer 112, and the component of the polarization P 2 parallel to the second layer 112 is the polarization P 1 of the first layer 111. It goes in the opposite direction.
  • next first layer 111 is made on the second layer 112 by the same method as the first first layer 111, and the next first layer 111 is made on the first layer 111 by the same method as the first second layer 112.
  • the operation of producing the two-layer 112 is repeated. As a result, a predetermined number of the first layer 111 and the second layer 112 are produced (FIG. 4 (e)).
  • a target TM made of metal is placed on the upper surface of the magnetron electrode 32, and the target TM is sputtered in this state to form the last layer of the first layer 111 and the second layer 112 on the substrate S.
  • a second electrode 122 is formed on the top (FIG. 4 (f)).
  • each first layer 111 vibrates in the same phase for each frequency at a specific plurality of frequencies determined by the thickness d 1 of the first layer 111 and the sound velocity v 1 among the many frequencies due to the piezoelectric effect.
  • each first layer 111 vibrates in the same direction.
  • each second layer 112 vibrates due to the piezoelectric effect at a specific plurality of frequencies determined by the thickness d 2 and the speed of sound v 2 of the second layer 112.
  • the direction of the parallel component P 2 // of the polarization P 2 of the second layer 112 is the direction of the parallel component P 1 // of the polarization P 1 of the first layer 111 (first direction).
  • the second layer 112 vibrates in the opposite phase to the first layer 111 due to the difference of 180 °.
  • d 2 is within 0.5 ⁇ (v 2 / v 1 ) times ⁇ 2.0 ⁇ (v 2 / v 1)
  • d 1 times the range of d 1 the first layer 111 and the second layer same specific It vibrates at multiple frequencies and becomes a resonance state.
  • These specific plurality of frequencies correspond to a plurality of wave numbers which are half-integers per layer.
  • the thing according to the first embodiment functions as a frequency filter.
  • the frequency filter 10 of the first embodiment is such that the number of layers of the first layer 111 and the second layer 112 is determined so as to have a power resistance with respect to a predetermined power in the range of 10 to 100 W. It can be used in a mobile phone base station having an output corresponding to a large amount of electric power.
  • FIG. 5 shows a modification of the frequency filter 10A of the first embodiment.
  • the frequency filter 10A is provided with an acoustic Bragg reflector 13 on the surface of the frequency filter 10 of the first embodiment on the side opposite to the laminated body 11 of the first electrodes 121.
  • the acoustic Bragg reflector 13 is formed by alternately stacking two types of layers 131 and 132 having different acoustic impedances.
  • the thickness of each layer 131, 132 is determined according to the material of each layer 131, 132 so that Bragg reflection of a sound wave having a vibration frequency of the laminated body 11 occurs.
  • the frequency filter 10 of the first embodiment was supported by a substrate made of quartz glass, and the frequency filter 10A of the modified example (that is, the one provided with the acoustic Bragg reflector 13) was manufactured.
  • Both the thickness d 1 and the thickness d 2 of the second layer 112 of the first layer 111 has been prepared target value as 5 [mu] m, measured values of the overall laminate 11 obtained thickness is 52 ⁇ m Therefore, the actual values of d 1 and d 2 are about 4.3 (52/12) ⁇ m on average.
  • the values of d 1 and d 2 were set to 5 ⁇ m.
  • the target value in these d 1 and d 2 experiments and the value used in the calculation, "5 ⁇ m" were determined so that the frequency filter 10A would function in the frequency domain centered on 400 MHz.
  • the acoustic Bragg reflector 13 was made so as to generate Bragg reflection of a sound wave having a frequency of 400 MHz.
  • the following experiment was performed on the produced frequency filter 10.
  • a high frequency electric field was applied between the first electrode 121 and the second electrode 122.
  • This high-frequency electric field is converted into mechanical vibration in the laminated body 11 by the inverse piezoelectric effect.
  • the mechanical vibration is reflected by the bottom surface of the quartz glass substrate and converted into a high frequency voltage by the piezoelectric effect in the laminated body 11.
  • this high frequency voltage was measured, and the insertion loss was calculated based on the obtained high frequency voltage. Then, by subtracting the mechanical loss generated in the quartz glass substrate from the obtained insertion loss, the conversion loss, which is the efficiency of electromechanical conversion due to the piezoelectric effect, was obtained.
  • FIG. 7 shows the results of measuring the (electrical) impedance of the manufactured frequency filter 10A together with the calculation results. Both the experimental value and the calculated value have obtained an impedance of over 200 ⁇ at a frequency near 400MHz, and the frequency filter 10A has sufficient power resistance.
  • the frequency is set to a relatively small value of 400 MHz here for the sake of simplification of the experiment
  • the thickness of the first layer 111 and the second layer 112 is made thinner, and the thickness of the first layer 111 and the second layer 112 is correspondingly reduced.
  • a frequency filter that can be used in a higher frequency band (for example, 3.5 GHz band or 4.5 GHz band) used in a base station of a mobile phone.
  • the conversion loss was obtained by experiment and calculation when the total number of layers of the first layer 111 and the second layer 112 was (a) 8 layers, (b) 4 layers, and (c) 2 layers.
  • the results are shown graphically.
  • the thickness of each layer is the same as that of the 12 layers shown in FIGS. 6 and 7 as the experimental and calculated results (target values for the experiment).
  • the same experiment and calculation were performed in the case where the first layer 111 is only one layer and the second layer 112 is not (not included in the present invention) (FIG. 8 (a)).
  • the number of positions in the graph where the conversion efficiency becomes minimum decreases, but in each case, the minimum value exists at the position where the horizontal axis is around 400 MHz. It can be seen that it operates at a frequency of around 400MHz. However, if the number of layers is reduced, the power resistance is lowered. Therefore, in consideration of power resistance and cost (which increases as the number of layers increases), it is advisable to determine the total number of layers of the first layer 111 and the second layer 112.
  • FIG. 9 shows the configuration of the frequency filter 20 of the second embodiment.
  • the frequency filter 20 is provided so as to sandwich the laminated body 21 in which the first layer 211 and the second layer 212 are alternately repeated one layer at a time and laminated in a predetermined number, and the laminated body 21 is sandwiched in the stacking direction. It has an electrode 221 and a second electrode 222. Of these components, the first electrode 221 and the second electrode 222 are the same as the first electrode 121 and the second electrode 122 in the frequency filter 10 of the first embodiment, respectively.
  • the second layer 212 uses a non-piezoelectric layer made of a non-piezoelectric insulating material.
  • non-piezoelectric insulating materials include dielectrics having no piezoelectricity, such as SiO 2.
  • a material that can generate piezoelectricity but does not generate piezoelectricity as a whole may be used as the material of the second layer 212 because the polarization is oriented in a random direction in the second layer 212. ..
  • the first layer 211 is made of a piezoelectric material.
  • the polarization direction of the first layer 211 is arbitrary as long as each first layer 211 is in the same direction. Therefore, the polarization direction of the first layer 211 may be perpendicular to the first layer 211, may be parallel to the first layer 211, and may be inclined with respect to the first layer 211 (! It may be neither vertical nor parallel).
  • the layer closest to the first electrode 221 among the layers in the laminated body 21 is the first layer (piezoelectric layer) 211, but this layer is the second layer (non-piezoelectric layer) 212.
  • the first layer 211 and the second layer 212 in the example shown in FIG. 9 are replaced with each other.
  • the thickness d 2 of the second layer 212 is 0.5 ⁇ (v 2 / v 1 ) times to 2.0 ⁇ (v 2 / v 1 ) of the thickness d 1 of the first layer 211, as in the case of the first embodiment. ) d Within the range of 1 times.
  • the number of layers of the first layer 111 and the second layer 112 is in the range of 10 to 100 W in order to secure the power resistance as a frequency filter used in the base station of the mobile phone, as in the case of the first embodiment. It is determined to have a power resistance with the upper limit being within.
  • the frequency filter 20 of the second embodiment can be manufactured basically by the same method as the frequency filter 10 of the first embodiment. However, as shown in FIG. 9, when the direction of the polarization P 1 of the first layer 211 is perpendicular to the first layer 211, the substrate is tilted with respect to the upper surface of the magnetron electrode or the temperature gradient is in the plane of the substrate. It is not necessary to form the first layer 211 and the second layer 212 after arranging the substrate in parallel with the upper surface of the magnetron electrode.
  • the frequency filter 20 of the second embodiment When high frequency power including a large number of frequencies is input between the first electrode 221 and the second electrode 222, the frequency filter 20 of the second embodiment includes those frequencies and has a size corresponding to the magnitude of the high frequency power. A high frequency voltage is generated between these electrodes.
  • each first layer 211 vibrates in the same phase for each frequency at a specific plurality of frequencies determined by the thickness d 1 of the first layer 211 and the speed of sound v 1 among the many frequencies due to the piezoelectric effect. ..
  • the second layer 212 does not vibrate due to the piezoelectric effect, the second layer 212 vibrates at the same specific plurality of frequencies as the first layer 211 due to the vibration from the first layer 211.
  • the thickness d 2 of the second layer 212 is the same as the thickness d 1 of the first layer 211 , or is close to d 1 and is 0.5 ⁇ (v 2 / v 1 ) times to 2.0 ⁇ (v 2 /). v 1 ) d
  • the vibration having the frequency of the first layer 211 satisfies the resonance condition in the second layer 212.
  • resonance having the specific plurality of frequencies corresponding to the plurality of wave numbers, which is a half-integer per layer occurs in the entire laminated body 21.
  • the object according to the second embodiment operates as a frequency filter related to the frequency.
  • the first layer 211 and the second layer 212 are alternately repeated one layer at a time as described above, and a predetermined number of layers are laminated in total, whereby the frequency filter used in the base station of the mobile phone is used. Withstand power is ensured.
  • the frequency filter 20 of the second embodiment does not need to adjust the relationship between the polarization directions of the first layer 211 and the second layer 212, and therefore, as shown in FIG. It can be manufactured more easily without using a special manufacturing method.
  • the frequency filter 10 of the first embodiment since not only the first layer 111 but also the second layer 112 is a piezoelectric material, the second layer 112 also becomes a source of vibration, so that the frequency of the second embodiment is used. An output signal stronger than that of the filter 20 can be obtained.
  • the frequency filter 20 of the second embodiment may be used for purposes other than the base station of a mobile phone. In that case, depending on the application (for example, in the case of a mobile phone terminal), the withstand power against high frequency power of 10 W is not required.
  • the frequency filter 10 of the first embodiment, the frequency filter 10A of the modified example thereof, and the frequency filter 20 of the second embodiment have been described above, the present invention is not limited to these three examples.
  • the frequency filter 20 of the second embodiment may be provided with an acoustic Bragg reflector in the same manner as the frequency filter 10A of the modified example of the first embodiment.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

L'invention concerne un filtre de fréquence utilisant une couche mince piézoélectrique, le filtre de fréquence permettant d'exécuter un filtrage de fréquence sur une puissance à haute fréquence d'une puissance en bloc gérée dans une station de base d'un téléphone portable. Le filtre de fréquence 10 comprend : un stratifié 11 dans lequel des premières couches 111 et des secondes couches 112 sont stratifiées en alternance une par une dans un nombre prescrit de couches, chaque première couche 111 étant une couche piézoélectrique constituée d'un premier matériau piézoélectrique et présentant une polarisation dirigée le long d'une direction prescrite, et chaque seconde couche 112 étant une couche piézoélectrique constituée d'un second matériau piézoélectrique et présentant une polarisation dont un composant est vertical ou parallèle à la première couche 111 et qui est dirigée le long d'une direction différente de celle de la polarisation de la première couche 111 de 180°, l'épaisseur d1 de la première couche 111 et l'épaisseur d2 de la seconde couche 112 étant comprises dans une plage de 0,5 × (v2 / v1) d1 ≤ d2 ≤ 2,0 × (v2 / v1)d1, v1 représentant une vitesse du son dans la première couche 111 et v2 représentant une vitesse du son dans la seconde couche 112 ; et une paire d'électrodes (une première électrode 121 et une seconde électrode 122) entre lesquelles le stratifié 11 est interposé dans la direction de stratification, le nombre prescrit étant défini pour obtenir une résistance de puissance électrique à une puissance à haute fréquence de 10 W.
PCT/JP2021/020236 2020-05-28 2021-05-27 Filtre de fréquence WO2021241696A1 (fr)

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Cited By (2)

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WO2023208449A1 (fr) * 2022-04-25 2023-11-02 Robert Bosch Gmbh Dispositif acoustique de volume et procédé de fabrication d'un dispositif acoustique de volume
WO2024063697A3 (fr) * 2022-09-22 2024-05-16 Rf360 Singapore Pte. Ltd. Dispositif à ondes acoustiques de volume (baw) à couches piézoélectriques à polarisation opposée pour résonance d'ordre supérieur et procédé de fabrication

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JP2007036915A (ja) * 2005-07-29 2007-02-08 Doshisha 高次モード薄膜共振器
JP2010178543A (ja) * 2009-01-30 2010-08-12 Doshisha 薄膜共振子
JP2013168748A (ja) * 2012-02-14 2013-08-29 Taiyo Yuden Co Ltd 弾性波デバイス
WO2017094520A1 (fr) * 2015-12-02 2017-06-08 株式会社村田製作所 Élément piézoélectrique, microphone piézoélectrique, résonateur piézoélectrique et procédé de fabrication d'élément piézoélectrique

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036915A (ja) * 2005-07-29 2007-02-08 Doshisha 高次モード薄膜共振器
JP2010178543A (ja) * 2009-01-30 2010-08-12 Doshisha 薄膜共振子
JP2013168748A (ja) * 2012-02-14 2013-08-29 Taiyo Yuden Co Ltd 弾性波デバイス
WO2017094520A1 (fr) * 2015-12-02 2017-06-08 株式会社村田製作所 Élément piézoélectrique, microphone piézoélectrique, résonateur piézoélectrique et procédé de fabrication d'élément piézoélectrique

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023208449A1 (fr) * 2022-04-25 2023-11-02 Robert Bosch Gmbh Dispositif acoustique de volume et procédé de fabrication d'un dispositif acoustique de volume
WO2024063697A3 (fr) * 2022-09-22 2024-05-16 Rf360 Singapore Pte. Ltd. Dispositif à ondes acoustiques de volume (baw) à couches piézoélectriques à polarisation opposée pour résonance d'ordre supérieur et procédé de fabrication

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