WO2021215390A1 - Dispositif capacitif de détection de proximité - Google Patents

Dispositif capacitif de détection de proximité Download PDF

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Publication number
WO2021215390A1
WO2021215390A1 PCT/JP2021/015853 JP2021015853W WO2021215390A1 WO 2021215390 A1 WO2021215390 A1 WO 2021215390A1 JP 2021015853 W JP2021015853 W JP 2021015853W WO 2021215390 A1 WO2021215390 A1 WO 2021215390A1
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electrode
capacitance
sensor electrode
excitation voltage
sensor
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PCT/JP2021/015853
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English (en)
Japanese (ja)
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甫 栗熊
雄介 新枦
雲偉 張
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住友理工株式会社
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Publication of WO2021215390A1 publication Critical patent/WO2021215390A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques

Definitions

  • the present invention relates to a capacitance type proximity detection device.
  • Patent Document 1 describes that a proximity sensor installed in a human collaborative robot detects the distance between the robot and a person.
  • a proximity sensor an ultrasonic sensor is described as a main example, and an optical sensor, a capacitance sensor, and a radio wave sensor are also described.
  • Patent Document 2 describes a self-capacity touch detection device.
  • the detection device includes a sensor electrode and an active guard electrode (also referred to as a shield electrode), and includes a buffer circuit and a drive auxiliary circuit as a voltage excitation circuit for the active guard electrode.
  • Patent Document 3 describes a device that measures the shape of a detection target by detecting the capacitance formed between the sensor electrode and the detection target.
  • the measuring device includes a buffer circuit for applying the voltage of the sensor electrode to the electrode serving as the active guard electrode. It is said that the buffer circuit keeps the potential difference between the sensor electrode and the active guard electrode constant, so that the influence of parasitic capacitance can be reduced.
  • the distance between the sensor electrode and the detection target is extremely short, as described in Patent Documents 2 and 3.
  • the change in capacitance is very small. Detecting small changes in capacitance is not easy.
  • the active guard electrode has a function of reducing the parasitic capacitance between the sensor electrode and the ground electrode and increasing the directivity of the detection range. If the shielding effect of the active guard electrode is not sufficient, the electric field generated from the sensor electrode wraps around the ground electrode, resulting in a parasitic capacitance between the sensor electrode and the ground electrode. As a result, the detection sensitivity of the change in capacitance between the sensor electrode and the detection target is reduced.
  • the shielding effect of the active guard electrode is higher. Further, when the shielding effect of the active guard electrode is sufficiently functioning, the closer the interlayer distance between the sensor electrode and the active guard electrode is, the more the change in capacitance between the sensor electrode and the detection target is detected. The directivity becomes high.
  • the parasitic capacitance between the sensor electrode and the ground electrode is provided by providing the active guard electrode and the buffer circuit (voltage follower) between the active guard electrode and the detection circuit.
  • the effect of can be reduced.
  • these are intended for cases where the distance to the detection target is short, for example, the distance to the detection target is long, such as a human collaborative robot, and the change in capacitance between the detection target and the detection target is very large. Not enough for small cases.
  • the present invention has been made in view of this background, and an object of the present invention is to provide a capacitance type proximity detection device capable of detecting extremely small changes in capacitance with high accuracy.
  • One aspect of the present invention is A sensor electrode for detecting the proximity of the detection target and A ground electrode arranged on the side of the sensor electrode opposite to the detection target, An active guard electrode arranged between the sensor electrode and the ground electrode, Capacitance Cx between the sensor electrode and the detection target is detected based on the amount of charge transfer in the sensor electrode when an excitation voltage is applied to the sensor electrode and an excitation voltage is applied to the sensor electrode.
  • Capacitance detection circuit and A plurality of buffer circuits in which an input terminal is connected to a voltage application terminal to the sensor electrode in the capacitance detection circuit and an output terminal is connected to the active guard electrode. It is in the capacitance type proximity detection device.
  • the capacitance type proximity detection device is provided with a plurality of buffer circuits as a circuit for applying an excitation voltage to the active guard electrode. If only one buffer circuit is provided and the parasitic capacitance between the active guard electrode and the ground electrode is large, the difference between the excitation voltage to the sensor electrode and the excitation voltage to the active guard electrode Becomes larger. Due to the potential difference between the sensor electrode and the active guard electrode, the parasitic capacitance between the sensor electrode and the ground electrode becomes large. In particular, when the capacitance between the detection target and the sensor electrode is small, the capacitance of the target cannot be detected due to the influence of the parasitic capacitance between the sensor electrode and the ground electrode.
  • the capacitance type proximity detection device is provided with a plurality of buffer circuits as a circuit for applying an excitation voltage to the active guard electrode.
  • the plurality of buffer circuits can reduce the deviation between the excitation voltage to the sensor electrode and the excitation voltage to the active guard electrode. As a result, the parasitic capacitance between the sensor electrode and the ground electrode can be reduced. Therefore, even when the capacitance between the detection target and the sensor electrode is small, the proximity of the detection target can be detected with high accuracy.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example of the capacitance type proximity detection apparatus.
  • FIG. 1 shows the application example
  • FIG. 5 is a simulation circuit diagram of Comparative Example 1 in the case where only one buffer circuit is provided and the parasitic capacitance Cz between the active guard electrode and the ground electrode is a small value (100 pF).
  • FIG. 5 is a simulation circuit diagram of Comparative Example 2 in the case where only one buffer circuit is provided and the parasitic capacitance Cz between the active guard electrode and the ground electrode is a large value (10000 pF). It is a simulation result for each of this example and Comparative Examples 1 and 2, and is a graph which shows the excitation voltage to the active guard electrode.
  • the detection device 1 can be applied, for example, as a device that is arranged in the human collaborative robot 2 and detects that a person, which is an example of the detection target 3, is close to the human collaborative robot 2. Then, when it is determined that the person who is the detection target 3 is close to the human collaborative robot 2 within a predetermined distance, the human collaborative robot 2 may be stopped or a warning may be issued. can.
  • the detection device 1 is a device that can detect the proximity of a person who is the detection target 3 based on an extremely small change in capacitance Cx.
  • the magnitude of the change in capacitance Cx that can be detected by the detection device 1 is, for example, 1 pF or less, particularly in the range of several tens to several hundreds fF.
  • the detection target 3 of the detection device 1 can target all conductors in addition to humans.
  • the detection target 3 of the detection device 1 can be a robot
  • the installation target of the detection device 1 can be another robot
  • the detection device 1 can be applied as a device for detecting the proximity of robots to each other.
  • the target for installing the detection device 1 can be installed at an arbitrary position in addition to the human collaborative robot 2. For example, by installing the detection device 1 in the intrusion prohibited area of the person who is the detection target 3, it is possible to detect the intrusion of a person.
  • the human collaborative robot 2 shown in FIG. 1 is a serial link type robot for performing arbitrary work.
  • the human collaborative robot 2 has a plurality of joints and is provided with a work unit at the tip.
  • the human collaborative robot 2 is a robot that conveys an object to be conveyed (not shown), and has a hand that grips the object to be conveyed at its tip.
  • the human collaborative robot 2 is not limited to the above configuration, and may have any configuration.
  • the detection device 1 includes a sensor main body 10 and a circuit unit 20.
  • the sensor body 10 is installed on the surface of the human collaborative robot 2.
  • the sensor body 10 is installed near the work unit (near the tip) of the human collaborative robot 2.
  • the sensor body 10 is formed in a sheet shape, and is formed by painting or plating on the frame body constituting the outer peripheral portion of the cylinder of the human collaborative robot 2, or the frame body itself formed of a conductor such as metal. Can be. It should be noted that a member formed separately from the frame body may be used and attached to the frame body.
  • the circuit unit 20 is electrically connected to the sensor body 10 and acquires the capacitance Cx.
  • the circuit unit 20 acquires an equivalent value of the capacitance Cx by, for example, applying an excitation voltage to the sensor main body 10 and detecting a current flowing when the excitation voltage is applied.
  • the detection device 1 includes a sensor main body 10 and a circuit unit 20.
  • the sensor body 10 is formed in a sheet shape.
  • the sensor body 10 includes a sensor electrode 11, a ground electrode 12, and an active guard electrode 13.
  • the sensor electrode 11 is formed in a planar shape (including a flat surface and a curved surface), and is an electrode for detecting the proximity of the detection target 3 (for example, a person).
  • An insulating layer (not shown) is provided on the surface of the sensor electrode 11, that is, the surface on the side of the detection target 3.
  • the ground electrode 12 is formed in a shape capable of facing the sensor electrode 11 at a distance from the sensor electrode 11, and is arranged on the side opposite to the detection target 3 on the sensor electrode 11.
  • the ground electrode 12 is formed in a planar shape, the ground electrode 12 is formed to have the same size as the sensor electrode 11.
  • the ground electrode 12 can also be a core material forming the central axis of the cylinder.
  • the ground electrode 12 is grounded.
  • the active guard electrode 13 is formed in a planar shape (including a flat surface and a curved surface), and is arranged between the sensor electrode 11 and the ground electrode 12.
  • the active guard electrode 13 is an electrode for suppressing the influence of the potential difference between the sensor electrode 11 and the ground electrode 12 in detecting the capacitance Cx with the detection target 3.
  • an insulating layer (not shown) is provided between the active guard electrode 13 and the sensor electrode 11. Further, an insulating layer (not shown) is also provided between the active guard electrode 13 and the ground electrode 12. Further, the active guard electrode 13 is formed larger than the sensor electrode 11 and the ground electrode 12, and projects outward from the entire circumference of the sensor electrode 11 and the ground electrode 12.
  • the capacitance between the sensor electrode 11 and the detection target 3 is Cx.
  • the parasitic capacitance between the sensor electrode 11 and the ground electrode 12 is Cy.
  • the parasitic capacitance between the active guard electrode 13 and the ground electrode 12 is Cz.
  • the excitation voltage applied to the sensor electrode 11 and the excitation voltage applied to the active guard electrode 13 match, the appearance between the sensor electrode 11 and the ground electrode 12 is apparent.
  • the above parasitic capacitance Cy * can be regarded as 0 (zero). Therefore, the sensor electrode 11 can be affected only by the change due to the capacitance Cx between the sensor electrode 11 and the detection target 3, and the capacitance Cx can be detected with high accuracy. That is, in an ideal state, the proximity of the detection target 3 can be detected with high accuracy.
  • the apparent parasitic capacitance will be Cy *
  • the actual parasitic capacitance will be Cy.
  • the parasitic capacitance Cz between the active guard electrode 13 and the ground electrode 12 is 1000 pF or more, particularly 10000 pF or more.
  • the magnitude of the change in capacitance Cx between the sensor electrode 11 and the detection target 3 is defined as, for example, 1 pF or less, particularly in the range of several tens to several hundreds fF. As described above, it can be seen that the parasitic capacitance Cz is very large with respect to the detectable range of the magnitude of the change in the capacitance Cx.
  • the circuit unit 20 includes a capacitance detection circuit 21 (hereinafter referred to as a “detection circuit”) and a plurality of buffer circuits 22 and 23.
  • the detection circuit 21 applies an excitation voltage to the sensor electrode 11. Further, the detection circuit 21 detects the capacitance Cx between the sensor electrode 11 and the detection target 3 based on the amount of electric charge transferred in the sensor electrode 11 when the excitation voltage is applied to the sensor electrode 11. Specifically, the detection circuit 21 detects the magnitude of the change in capacitance Cx between the sensor electrode 11 and the detection target 3 as compared with the case where the detection target 3 does not exist.
  • the plurality of buffer circuits 22 and 23 are connected between the detection circuit 21 and the active guard electrode 13.
  • the plurality of buffer circuits 22 and 23 are composed of operational amplifiers. Further, the plurality of buffer circuits 22 and 23 are connected in parallel.
  • the input terminals of the plurality of buffer circuits 22 and 23 are connected to the voltage application terminals to the sensor electrodes 11 in the detection circuit 21.
  • the non-inverting input of the operational amplifier is used as the input terminal of the buffer circuits 22 and 23.
  • the output terminals of the plurality of buffer circuits 22 and 23 are connected to the active guard electrode 13. Further, the output of the operational amplifier and the inverting input are connected.
  • the plurality of buffer circuits 22 and 23 can have the same voltage at the input terminal and the voltage at the output terminal. That is, the plurality of buffer circuits 22 and 23 can apply the same voltage as the voltage applied to the sensor electrode 11 to the active guard electrode 13.
  • the active guard is due to the fact that the parasitic capacitance Cz is very large with respect to the detectable range of the magnitude of the change in the capacitance Cx. It was found that the excitation voltage to the electrode 13 causes a delay (deviation) with respect to the rectangular excitation voltage applied to the sensor electrode 11. Therefore, in this example, the delay is reduced by providing a plurality of buffer circuits 22 and 23 in parallel.
  • the basic principle of detecting the capacitance Cx by the detection device 1 will be described with reference to FIG.
  • the detection circuit 21 applies a rectangular excitation voltage to the sensor electrode 11.
  • a plurality of buffer circuits 22 and 23 are connected between the detection circuit 21 and the active guard electrode 13. Therefore, in an ideal state, the excitation voltage to the active guard electrode 13 coincides with the rectangular excitation voltage to the sensor electrode 11.
  • the apparent parasitic capacitance Cy * between the sensor electrode 11 and the ground electrode 12 can be regarded as 0 (zero). Therefore, the current flowing through the sensor electrode 11 is affected only by the capacitance Cx between the sensor electrode 11 and the detection target 3.
  • the charge transfer amount Q in the sensor electrode 11 is represented by the equation (1).
  • R is the electrical resistance between the output terminals of the buffer circuits 22 and 23 and the active guard electrode 13.
  • the current I flowing through the sensor electrode 11 changes as shown in FIG. Then, the current I flowing through the sensor electrode 11 changes according to the capacitance Cx. As the capacitance Cx increases, the slope of the current I in FIG. 3 becomes gentle. That is, at the time t1 when the excitation voltage E is applied, the current I rises at once to R / E, and then gradually decreases according to the capacitance Cx.
  • the integrated value of the current I (the area of the enclosed portion) in FIG. 3 is the total amount of electric charge transferred Qx, which corresponds to the capacitance Cx. Therefore, the capacitance Cx can be obtained by calculating the total amount of electric charge Qx in the detection circuit 21.
  • the excitation voltage V1 applied to the sensor electrode 11 and the excitation voltage V2 applied to the active guard electrode 13 are as shown in FIG. That is, the excitation voltage V1 applied to the sensor electrode 11 becomes a constant voltage E from the time t1. On the other hand, the excitation voltage V2 applied to the active guard electrode 13 becomes a constant voltage E with a delay time td from the time t1 to t2. In this way, from time t1 to t2, the excitation voltage V2 applied to the active guard electrode 13 is in a state of being deviated from the excitation voltage V1 applied to the sensor electrode 11.
  • the charge Q in the sensor electrode 11 also moves to the ground electrode 12 side.
  • the magnitude of the change in the detectable capacitance Cx is between the sensor electrode 11 and the ground electrode 12 when the excitation voltage V2 to the active guard electrode 13 is delayed with respect to the excitation voltage V1 to the sensor electrode 11. It is much smaller than the parasitic capacitance Cy.
  • the magnitude of the change in the detectable capacitance Cx is 1/1000 or less of the parasitic capacitance Cy in the delay. Then, the electric charge in the sensor electrode 11 is dominated by the movement with the ground electrode 12.
  • the current I flowing through the sensor electrode 11 becomes a current flowing between the sensor electrode 11 and the ground electrode 12 at the delay time td, and becomes a substantially constant value R / E.
  • the current I flowing through the sensor electrode 11 behaves in the same manner as in FIG. 3, which is shown as an ideal state. That is, the current I flowing through the sensor electrode 11 decreases according to the capacitance Cx.
  • the integrated value (area of the enclosed portion) of the current I at the delay time td is the total amount of charge transfer Qy between the sensor electrode 11 and the ground electrode 12.
  • the integrated value of the current I after the delay time td becomes the total amount of electric charge transferred Qx between the sensor electrode 11 and the detection target 3, and becomes a value corresponding to the capacitance Cx.
  • the integrated value of the current I is the total value of the total charge transfer amount Qy at the delay time td and the total charge transfer amount Qx after the delay time td. Therefore, the capacitance Cx can be obtained by calculating the total charge movement Qx excluding the total charge movement Qy at the delay time td in the detection circuit 21.
  • the detection device 1 is designed as follows in order to be able to detect the capacitance Cx with the detection target 3 in consideration of the delay time td.
  • FIG. 6 showing the measurement range in the detection circuit 21 will be described.
  • the black dots showing the detected values in FIG. 6 indicate a state in which the person who is the detection target 3 approaches the human collaborative robot 2 and stops at a certain distance.
  • the capacitance C acquired by the detection circuit 21 is the sum of the influence of the total charge movement Qy of the delay time td in FIG. 5 and the capacitance Cx between the sensor electrode 11 and the detection target 3. Become.
  • the capacitance C acquired by the detection circuit 21 is referred to as a detection capacitance.
  • the total amount of electric charge transferred Qy at the delay time td is a constant value. Therefore, in the detected capacitance C, the influence of the total charge transfer amount Qy at the delay time td is considered as the measurement offset value C_offset as a constant value. That is, as shown in FIG. 6, the measurement range of the detection circuit 21 is a range in which the capacitance Cx between the sensor electrode 11 and the detection target 3 can be detected in a state of being offset by the measurement offset value C_offset. Must be set to.
  • the measurement offset value C_offset does not deviate from the measurement range C_range.
  • the measurement offset value C_offset is required to be smaller than half of the measurement range C_range. That is, the measurement range C_range satisfies the equation (3).
  • the right side is the measurement offset value C_offset.
  • the measurement offset value C_offset is calculated based on the current I, the excitation voltage E, and the delay time td.
  • the measurement offset value C_offset can be reduced by shortening the delay time td. That is, in order to set the delay time td that satisfies the equation (3), the number of parallel buffer circuits 22 and 23 is designed.
  • the distance between the sensor electrode 11 and the detection target 3 is about 600 mm, and each of the electrodes 11, 12, and 13 is a square with a side of 200 mm (the size of the sensor electrode 11 is 40,000 mm 2 ).
  • the case where the capacitance Cx changes in the range of several tens to several hundreds fF is targeted as compared with the case where the detection target 3 does not exist.
  • the measurement offset value C_offset needs to be set to a value smaller than half of 16pF (less than 8pF).
  • the number of parallel buffer circuits 22 and 23 is designed so that the measurement offset value C_offset is less than 8 pF.
  • the delay time td becomes shorter as the number of parallel buffer circuits 22 and 23 is increased.
  • the circuit configuration including the two buffer circuits 22 and 23 in this example is as shown in FIG. As shown in FIG. 7, buffer circuits 22 and 23 of the same type are connected in parallel.
  • the parasitic capacitance Cz is 10000 pF.
  • the excitation voltage to the active guard electrode 13 is V2a.
  • the circuit configuration including one buffer circuit in Comparative Example 1 is as shown in FIG.
  • This buffer circuit is the same type as the buffer circuit 22 in this example.
  • the parasitic capacitance Cz is 10000 pF as in this example.
  • the excitation voltage to the active guard electrode 13 is V2b.
  • the circuit configuration including one buffer circuit in Comparative Example 2 is as shown in FIG.
  • This buffer circuit is the same type as the buffer circuit 22 in this example.
  • the parasitic capacitance Cz is set to a value of 10 pF, which is extremely small as compared with this example and Comparative Example 1.
  • the excitation voltage to the active guard electrode 13 is V2c.
  • the excitation voltages V2a, V2b, and V2c to the active guard electrode 13 are as shown in FIG.
  • Comparative Example 2 when the parasitic capacitance Cz is a small value of 10 pF, the excitation voltage V2c shows a rectangular waveform with almost no delay time.
  • Comparative Example 1 in which the parasitic capacitance Cz is a large value of 10000 pF, there is a delay time.
  • the delay time tda in this example is sufficiently shorter than the delay time tdb in Comparative Example 1.
  • the circuit unit 20 includes the plurality of buffer circuits 22 and 23, the capacitance Cx can be detected even if the parasitic capacitance Cz is large.
  • the detection device 1 is provided with a plurality of buffer circuits 22 and 23 as circuits for applying the excitation voltage V2 to the active guard electrode 13. If only one buffer circuit is provided and the parasitic capacitance Cz between the active guard electrode 13 and the ground electrode 12 is large, the excitation voltage V1 to the sensor electrode 11 and the active guard electrode 13 are reached. The deviation from the excitation voltage V2 of the above becomes large. Due to the potential difference between the sensor electrode 11 and the active guard electrode 13, the parasitic capacitance Cy between the sensor electrode 11 and the ground electrode 12 becomes large. In particular, when the capacitance Cx between the detection target 3 and the sensor electrode 11 is small, the capacitance Cx of the detection target 3 is increased due to the influence of the parasitic capacitance Cy between the sensor electrode 11 and the ground electrode 12. Cannot be detected.
  • the detection device 1 is provided with a plurality of buffer circuits 22 and 23 as a circuit for applying the excitation voltage V2 to the active guard electrode 13.
  • the plurality of buffer circuits 22 and 23 can reduce the deviation between the excitation voltage V1 to the sensor electrode 11 and the excitation voltage V2 to the active guard electrode 13.
  • the parasitic capacitance Cy between the sensor electrode 11 and the ground electrode 12 can be reduced. Therefore, even when the capacitance Cx between the detection target 3 and the sensor electrode 11 is small, the proximity of the detection target 3 can be detected with high accuracy.

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  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

L'invention concerne un dispositif capacitif de détection de proximité (1) comprenant : une électrode de détection (11) qui est destinée à détecter la proximité d'un sujet de détection (3); une électrode de masse (12) qui est disposée sur l'électrode de détection (11) sur le côté opposé au sujet de détection (3); une électrode de garde active (13) qui est disposée entre l'électrode de détection (11) et l'électrode de masse (12); un circuit de détection de capacité (21) qui applique une tension d'excitation à l'électrode de détection (11) et détecte la capacité (Cx) entre l'électrode de détection (11) et le sujet de détection (3) sur la base de la quantité de charge transférée de l'électrode de détection (11) lorsque la tension d'excitation est appliquée à l'électrode de détection (11); et une pluralité de circuits tampons (22, 23), dont les bornes d'entrée sont connectées à une borne du circuit de détection de capacité (21) pour l'application de tension à l'électrode de détection (11), et dont les bornes de sortie sont connectées à l'électrode de garde active (13).
PCT/JP2021/015853 2020-04-24 2021-04-19 Dispositif capacitif de détection de proximité WO2021215390A1 (fr)

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JP2020077043A JP7460435B2 (ja) 2020-04-24 2020-04-24 静電容量型近接検出装置
JP2020-077043 2020-04-24

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000513864A (ja) * 1995-06-29 2000-10-17 インヴォトロニクス マニュファクチュアリング 近接センサ
JP2003202312A (ja) * 2001-12-28 2003-07-18 Matsushita Electric Works Ltd 水分量センサ
WO2018131237A1 (fr) * 2017-01-13 2018-07-19 三菱電機株式会社 Système de robot collaboratif et son procédé de commande

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000513864A (ja) * 1995-06-29 2000-10-17 インヴォトロニクス マニュファクチュアリング 近接センサ
JP2003202312A (ja) * 2001-12-28 2003-07-18 Matsushita Electric Works Ltd 水分量センサ
WO2018131237A1 (fr) * 2017-01-13 2018-07-19 三菱電機株式会社 Système de robot collaboratif et son procédé de commande

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