WO2021212779A1 - Spin-orbit torque magnetoresistive random-access memory and preparation method therefor - Google Patents

Spin-orbit torque magnetoresistive random-access memory and preparation method therefor Download PDF

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WO2021212779A1
WO2021212779A1 PCT/CN2020/121889 CN2020121889W WO2021212779A1 WO 2021212779 A1 WO2021212779 A1 WO 2021212779A1 CN 2020121889 W CN2020121889 W CN 2020121889W WO 2021212779 A1 WO2021212779 A1 WO 2021212779A1
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layer
magnetic
spin
material layer
orbit
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PCT/CN2020/121889
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French (fr)
Chinese (zh)
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孙一慧
孟皓
孟凡涛
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浙江驰拓科技有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

Definitions

  • the invention relates to the technical field of magnetic storage devices, in particular to a spin-orbit torque magnetic storage device and a preparation method thereof.
  • SOT-MRAM Spin-Orbit Torque Magnetic Memory
  • SOT-MRAM Spin-Orbit Torque MRAM
  • SOT-MRAM uses spin-orbit torque to flip the magnetic tunnel junction, avoiding the write current from frequently passing through the barrier layer of the magnetic tunnel junction and improving the device Durability, truly achieve the goal of MRAM close to unlimited erasing and writing. Therefore, SOT-MRAM is expected to replace the traditional STT-MRAM and become the mainstream memory in the future.
  • SOT-MRAM needs to be written with an external magnetic field to achieve the determined direction flip of the free layer of the vertical magnetic tunnel junction p-MTJ. This demand affects SOT-MRAM's nanofabrication technology hinders its continued miniaturization development.
  • the present invention provides a spin-orbit torque magnetic storage device and a preparation method thereof, improves the bottom electrode structure of the device, and uses the improved bottom electrode structure to realize the inversion of the determined direction of the SOT-MRAM free layer.
  • the present invention provides a spin-orbit torque magnetic storage device, including:
  • a dielectric layer, the dielectric layer is located above the substrate, and a plurality of through holes are arranged at intervals in the dielectric layer;
  • a conductive material layer located in the through hole and in contact with the substrate
  • a spin-orbit moment material layer located above the dielectric layer and in contact with the magnetic bias layer;
  • the magnetic tunnel junction stack is located above the spin-orbit moment material layer and is located between two adjacent through holes, and the magnetization direction of the magnetic tunnel junction stack is perpendicular magnetization;
  • the conductive material layer, the magnetic bias layer and the spin-orbit moment material layer jointly constitute the bottom electrode structure of the spin-orbit moment magnetic storage device.
  • the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
  • the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
  • it further includes: a non-magnetic isolation layer, the non-magnetic isolation layer is located in the through hole and disposed above the magnetic bias layer;
  • the spin-orbit moment material layer is in contact with the non-magnetic isolation layer, and the conductive material layer, the magnetic bias layer, the non-magnetic isolation layer, and the spin-orbit moment material layer together constitute a spin-orbit moment magnetic memory
  • the bottom electrode structure of the piece is in contact with the non-magnetic isolation layer, and the conductive material layer, the magnetic bias layer, the non-magnetic isolation layer, and the spin-orbit moment material layer together constitute a spin-orbit moment magnetic memory The bottom electrode structure of the piece.
  • the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
  • the present invention provides a spin-orbit torque magnetic storage device, including:
  • a dielectric layer, the dielectric layer is located above the substrate, and a plurality of through holes are arranged at intervals in the dielectric layer;
  • a conductive material layer located in the through hole and filling the through hole, in contact with the substrate;
  • the magnetic bias layer is located above the through hole and corresponds to the through hole one-to-one, and the magnetization direction of the magnetic bias layer is in-plane magnetization;
  • the magnetic tunnel junction stack is located above the spin-orbit moment material layer and is located between two adjacent through holes, and the magnetization direction of the magnetic tunnel junction stack is perpendicular magnetization;
  • the conductive material layer, the magnetic bias layer and the spin-orbit moment material layer jointly constitute the bottom electrode structure of the spin-orbit moment magnetic storage device.
  • the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
  • the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
  • it further includes: a non-magnetic isolation layer, the non-magnetic isolation layer corresponds to the magnetic bias layer one-to-one, and the non-magnetic isolation layer is located between the magnetic bias layer and the spin-orbit moment material Between the layers, the conductive material layer, the magnetic bias layer, the non-magnetic isolation layer and the spin-orbit moment material layer jointly constitute the bottom electrode structure of the spin-orbit moment magnetic storage device.
  • the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
  • the present invention provides a method for manufacturing a spin-orbit torque magnetic storage device, including:
  • the magnetic bias layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
  • the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
  • the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
  • a conductive material layer, a magnetic bias layer, and a non-magnetic isolation layer are sequentially formed in the through hole, and then a self-contained layer is formed above the dielectric layer.
  • Spin orbital moment material layer is sequentially formed in the through hole, and then a self-contained layer is formed above the dielectric layer.
  • the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
  • the present invention provides a method for manufacturing a spin-orbit torque magnetic storage device, including:
  • a magnetic bias layer is formed one-to-one above the through holes
  • the magnetic bias layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
  • the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
  • the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
  • a magnetic bias layer and a non-magnetic isolation layer are formed one-to-one above the through holes; then, a spin-orbit moment material layer is formed above the non-magnetic isolation layer.
  • the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
  • the spin-orbit torque magnetic storage device and the preparation method thereof provided by the present invention improve the bottom electrode structure of the device, introduce a magnetic bias layer into the bottom electrode structure, and use the improved bottom electrode structure to realize the inversion of the determined direction of the SOT-MRAM free layer.
  • FIG. 1 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to an embodiment of the present invention.
  • This embodiment provides a spin-orbit torque magnetic memory device, as shown in FIG. 1, which shows a cross-sectional structure of two memory cells.
  • the device includes: a substrate 101, a dielectric layer 102, and a conductive material layer 104 , The magnetic bias layer 105, the spin-orbit moment material layer 107 and the magnetic tunnel junction stack 108, where
  • the dielectric layer 102 is located above the substrate 101, and the dielectric layer 102 is provided with a plurality of through holes spaced apart, the conductive material layer 104 and the magnetic bias layer 105 are located in the plurality of through holes, wherein the conductive material layer 104 and The substrate 101 is in contact, the magnetic bias layer 105 is located above the conductive material layer 104, and the magnetization direction of the magnetic bias layer 105 is in-plane magnetization, and the conductive material layer 104 is a conductive metal, such as Cu, W, Ti, Ta, Co At least one of its alloys, Cu is the most commonly used, and the magnetic bias layer 105 is a magnetic conductive metal film, for example, at least one of Co, CoFe, Ni, CoFeB and its alloys are used.
  • the spin orbit moment material layer 107 is located above the dielectric layer 102.
  • the spin orbit moment material layer 107 is in contact with the magnetic bias layer 105
  • the magnetic tunnel junction stack 108 is located above the spin orbit moment material layer 107
  • Each magnetic tunnel junction stack 108 is located between two adjacent through holes.
  • the magnetization direction of the magnetic tunnel junction stack 108 is perpendicular magnetization. It should be noted that the present invention does not limit the implementation form of the magnetic tunnel junction stack.
  • FIG. 1 only shows the free layer, barrier layer and reference layer of the magnetic tunnel junction stack 108, where the free layer is close to the spin orbit. ⁇ 107 ⁇ Moment material layer 107.
  • the conductive material layer, the magnetic bias layer, and the spin-orbit moment material layer together constitute the bottom electrode structure of the device.
  • the bottom electrode structure is introduced
  • the magnetic bias layer with in-plane magnetization generates a horizontal stray magnetic field in the free layer of the magnetic tunnel junction, and the free layer of the SOT-MRAM can be reversed in the direction determined without an external magnetic field.
  • the magnetic bias layer is used as a part of the bottom electrode.
  • the direction of the stray magnetic field of the magnetic bias layer corresponding to one free layer to other free layers will be the same, which can avoid bias
  • the neighboring effect caused by the layer on the free layer (the direction of the neighboring bit stray field is inconsistent with its own bit stray field).
  • FIG. 2 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to another embodiment of the present invention.
  • a non-magnetic isolation layer 106 is added on the basis of the structure in FIG. Layer 106 contacts.
  • the non-magnetic isolation layer 106 is a non-magnetic conductive metal film, for example, one or a combination of Pt, Ta, Ti, and W is used.
  • a non-magnetic isolation layer 106 is inserted between the magnetic bias layer 105 (such as Co) and the spin-orbit moment material layer 107, which can block the SOT effect and improve the stability of the magnetic bias layer 105.
  • the magnetic bias layer 105 such as Co
  • the magnetic bias layer 105 is easily oxidized, and covering it with a non-magnetic metal layer can effectively isolate the contact between Co and the air and reduce oxidation.
  • Step 1 Provide substrate
  • Step 2 Depositing a dielectric layer on the substrate, and forming a plurality of through holes arranged at intervals in the dielectric layer by etching;
  • Step 3 In the through hole, a conductive material layer, a magnetic bias layer and a non-magnetic isolation layer are sequentially formed (if there is no non-magnetic isolation layer, only the conductive material layer and the magnetic bias layer are formed);
  • a conductive material layer, a magnetic bias layer, and a non-magnetic isolation layer can be deposited sequentially, and then a CMP (chemical mechanical profiling) process is performed, and the profiling end point is controlled on the surface of the dielectric layer.
  • CMP chemical mechanical profiling
  • Step 4 Form a spin-orbit moment material layer on the dielectric layer, generally through a deposition process
  • Step 5 Form a magnetic tunnel junction stack above the spin-orbital moment material layer
  • each layer of the magnetic tunnel junction is deposited first, and then through photolithography and etching, a magnetic tunnel junction stack can be formed.
  • Step 6 In-plane magnetization of the magnetic bias layer, and perpendicular magnetization of the magnetic tunnel junction stack.
  • the magnetic bias layer and the non-magnetic isolation layer are grown inside the through hole, the process is simple to realize, and the etching of the magnetic bias layer and the non-magnetic isolation layer is omitted.
  • This embodiment provides a spin-orbit torque magnetic memory device, as shown in FIG. 3, which shows a cross-sectional structure of two memory cells.
  • the device includes a substrate 301, a dielectric layer 302, and a conductive material layer 304. , The magnetic bias layer 305, the spin-orbit moment material layer 307, and the magnetic tunnel junction stack 308, wherein,
  • the dielectric layer 302 is located above the substrate 301, and the dielectric layer 302 is provided with a plurality of through holes arranged at intervals.
  • the conductive material layer 304 is located in the through holes and fills the through holes, and is in contact with the substrate 301.
  • the conductive material layer 304 is a conductive metal, such as at least one of Cu, W, Ti, Ta, Co, and alloys thereof, and the most commonly used Cu is used.
  • the magnetic bias layer 305 is located above the through holes, corresponding to the through holes one-to-one, and the magnetization direction of the magnetic bias layer 305 is in-plane magnetization.
  • the magnetic bias layer 305 is a layer of magnetic conductive metal film, for example, at least one of Co, CoFe, Ni, CoFeB and alloys thereof is used.
  • the spin orbit moment material layer 307 is located above the magnetic bias layer 305
  • the magnetic tunnel junction stack 308 is located above the spin orbit moment material layer 307
  • each magnetic tunnel junction stack 308 is located between two adjacent through holes
  • the magnetization direction of the magnetic tunnel junction stack 308 is perpendicular magnetization. It should be noted that the present invention does not limit the implementation form of the magnetic tunnel junction stack.
  • FIG. 3 only shows the free layer, barrier layer and reference layer of the magnetic tunnel junction stack 308, where the free layer is close to the spin orbit. ⁇ 307 ⁇ Moment material layer 307.
  • Example 1 Compared with Example 1, the magnetic bias layer of Example 1 is grown in the through hole, while the magnetic bias layer of Example 3 is grown outside the through hole, but the process is different, and the same technical effect can be achieved, namely The free layer of SOT-MRAM can be reversed in the direction determined without an external magnetic field.
  • FIG. 4 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to another embodiment of the present invention.
  • a non-magnetic isolation layer 306 is added.
  • the non-magnetic isolation layer 306 corresponds to the magnetic bias layer 305 one-to-one.
  • the non-magnetic isolation layer 306 is located in the magnetic bias layer 305 and the spin-orbit moment material layer. 307 between.
  • the non-magnetic isolation layer 306 is a non-magnetic conductive metal film, for example, one or a combination of Pt, Ta, Ti, and W is used.
  • a non-magnetic isolation layer 306 is inserted between the magnetic bias layer 305 (such as Co) and the spin-orbit moment material layer 307, which can block the SOT effect and improve the stability of the magnetic bias layer 305.
  • the magnetic bias layer 305 such as Co
  • the magnetic bias layer 305 is easily oxidized, and covering it with a non-magnetic metal layer can effectively isolate the contact between Co and air and reduce oxidation.
  • Step 1 Provide substrate
  • Step 2 Depositing a dielectric layer on the substrate, and forming a plurality of through holes arranged at intervals in the dielectric layer by etching;
  • Step 3 Form a conductive material layer in the through hole, and the conductive material layer is filled with the through hole;
  • Step 4 Form a magnetic bias layer and a non-magnetic isolation layer in one-to-one correspondence above the through holes (if there is no non-magnetic isolation layer, only the magnetic bias layer is formed);
  • the metal materials of the magnetic bias layer and the non-magnetic isolation layer are deposited first, and then the magnetic bias layer and the non-magnetic isolation layer are obtained through photolithography and etching processes, and then the dielectric is deposited and CMP (chemical mechanical profiling) is performed. ) Process.
  • Step 5 forming a spin-orbit moment material layer above the non-magnetic isolation layer, generally through a deposition process
  • Step 6 forming a magnetic tunnel junction stack above the spin-orbital moment material layer
  • each layer of the magnetic tunnel junction is deposited first, and then through photolithography and etching, a magnetic tunnel junction stack can be formed.
  • Step 7 In-plane magnetization of the magnetic bias layer, and perpendicular magnetization of the magnetic tunnel junction stack.
  • the magnetic bias layer and the non-magnetic isolation layer are grown outside the through hole, and corresponding photolithography and etching are required to be added, so that the obtained magnetic film has better performance and a smoother surface.

Abstract

Provided are a spin-obit torque magnetoresistive random-access memory (SOT-MRAM) and a preparation method therefor. The memory comprises: a substrate, a dielectric layer above the substrate, a conductive material layer located at the interiors of through holes of the dielectric layer, a magnetic bias layer located at the interiors of through holes of the dielectric layer or above the through holes of the dielectric layer, a spin orbit torque material layer located above the magnetic bias layer, and magnetic tunnel junction stacks above the spin orbit torque material layer. According to the memory of the present invention, the conductive material layer, the magnetic bias layer, and the spin orbit torque material layer jointly constitute the bottom electrode structure of the SOT-MRAM, and the bottom electrode structure can be used to turn over, in a determined direction, a free layer of the SOT-MRAM.

Description

自旋轨道力矩磁存储器件及其制备方法Spin-orbit torque magnetic storage device and preparation method thereof 技术领域Technical field
本发明涉及磁存储器件技术领域，尤其涉及一种自旋轨道力矩磁存储器件及其制备方法。The invention relates to the technical field of magnetic storage devices, in particular to a spin-orbit torque magnetic storage device and a preparation method thereof.
背景技术Background technique
基于自旋轨道力矩磁存储器(Spin-Orbit Torque MRAM，简称SOT-MRAM)利用自旋轨道矩对磁性隧道结进行翻转，避免了写入电流频繁穿过磁性隧道结的势垒层，能够提高器件耐久性，真正实现MRAM接近无限次擦写的目标。因而SOT-MRAM有望替代传统的STT-MRAM成为未来主流存储器。Spin-Orbit Torque Magnetic Memory (Spin-Orbit Torque MRAM, referred to as SOT-MRAM) uses spin-orbit torque to flip the magnetic tunnel junction, avoiding the write current from frequently passing through the barrier layer of the magnetic tunnel junction and improving the device Durability, truly achieve the goal of MRAM close to unlimited erasing and writing. Therefore, SOT-MRAM is expected to replace the traditional STT-MRAM and become the mainstream memory in the future.
但是，SOT-MRAM实际应用依然有几个瓶颈，其中一个瓶颈就是SOT-MRAM写入时需要外加磁场来实现垂直型磁性隧道结p-MTJ的自由层的确定方向的翻转，这一需求影响了SOT-MRAM的纳米加工工艺，且阻碍了其继续小型化的发展。However, there are still several bottlenecks in the practical application of SOT-MRAM. One of the bottlenecks is that SOT-MRAM needs to be written with an external magnetic field to achieve the determined direction flip of the free layer of the vertical magnetic tunnel junction p-MTJ. This demand affects SOT-MRAM's nanofabrication technology hinders its continued miniaturization development.
发明内容Summary of the invention
为解决上述问题，本发明提供一种自旋轨道力矩磁存储器件及其制备方法，改进器件底电极结构，利用改进的底电极结构实现SOT-MRAM自由层确定方向的翻转。In order to solve the above problems, the present invention provides a spin-orbit torque magnetic storage device and a preparation method thereof, improves the bottom electrode structure of the device, and uses the improved bottom electrode structure to realize the inversion of the determined direction of the SOT-MRAM free layer.
第一方面，本发明提供一种自旋轨道力矩磁存储器件，包括：In the first aspect, the present invention provides a spin-orbit torque magnetic storage device, including:
衬底；Substrate
介电层，所述介电层位于所述衬底上方，所述介电层中设置有间隔设置的多个通孔；A dielectric layer, the dielectric layer is located above the substrate, and a plurality of through holes are arranged at intervals in the dielectric layer;
导电材料层，位于所述通孔内，与所述衬底接触；A conductive material layer located in the through hole and in contact with the substrate;
磁性偏置层，位于所述通孔内，并且设置在所述导电材料层上方，所述磁性偏置层的磁化方向为面内磁化；A magnetic bias layer located in the through hole and above the conductive material layer, and the magnetization direction of the magnetic bias layer is in-plane magnetization;
自旋轨道矩材料层，位于所述介电层上方，与所述磁性偏置层接触；A spin-orbit moment material layer located above the dielectric layer and in contact with the magnetic bias layer;
磁性隧道结堆叠件，位于所述自旋轨道矩材料层上方，且处于两个相邻通孔之间的位置，所述磁性隧道结堆叠件的磁化方向为垂直磁化；The magnetic tunnel junction stack is located above the spin-orbit moment material layer and is located between two adjacent through holes, and the magnetization direction of the magnetic tunnel junction stack is perpendicular magnetization;
其中，所述导电材料层、磁性偏置层以及自旋轨道矩材料层共同构成自旋轨道力矩磁存储器件的底电极结构。Wherein, the conductive material layer, the magnetic bias layer and the spin-orbit moment material layer jointly constitute the bottom electrode structure of the spin-orbit moment magnetic storage device.
可选地，所述导电材料层采用Cu、W、Ti、Ta、Co及其合金中的至少一种。Optionally, the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
可选地，所述磁性偏置层采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。Optionally, the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
可选地，还包括：非磁性隔离层，所述非磁性隔离层位于所述通孔内，并且设置在所述磁性偏置层上方；Optionally, it further includes: a non-magnetic isolation layer, the non-magnetic isolation layer is located in the through hole and disposed above the magnetic bias layer;
对应地，所述自旋轨道矩材料层与所述非磁性隔离层接触，所述导电材料层、磁性偏置层、非磁性隔离层以及自旋轨道矩材料层共同构成自旋轨道力矩磁存储器件的底电极结构。Correspondingly, the spin-orbit moment material layer is in contact with the non-magnetic isolation layer, and the conductive material layer, the magnetic bias layer, the non-magnetic isolation layer, and the spin-orbit moment material layer together constitute a spin-orbit moment magnetic memory The bottom electrode structure of the piece.
可选地，所述非磁性隔离层采用Pt、Ta、Ti、W中的一种或几种的组合。Optionally, the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
第二方面，本发明提供一种自旋轨道力矩磁存储器件，包括：In a second aspect, the present invention provides a spin-orbit torque magnetic storage device, including:
衬底；Substrate
介电层，所述介电层位于所述衬底上方，所述介电层中设置有间隔设置的多个通孔；A dielectric layer, the dielectric layer is located above the substrate, and a plurality of through holes are arranged at intervals in the dielectric layer;
导电材料层，位于所述通孔内并充满所述通孔，与所述衬底接触；A conductive material layer located in the through hole and filling the through hole, in contact with the substrate;
磁性偏置层，位于所述通孔上方，与所述通孔一一对应，所述磁性偏置层的磁化方向为面内磁化；The magnetic bias layer is located above the through hole and corresponds to the through hole one-to-one, and the magnetization direction of the magnetic bias layer is in-plane magnetization;
自旋轨道矩材料层，位于所述磁性偏置层上方；A spin-orbit moment material layer located above the magnetic bias layer;
磁性隧道结堆叠件，位于所述自旋轨道矩材料层上方，且处于两个相邻通孔之间的位置，所述磁性隧道结堆叠件的磁化方向为垂直磁化；The magnetic tunnel junction stack is located above the spin-orbit moment material layer and is located between two adjacent through holes, and the magnetization direction of the magnetic tunnel junction stack is perpendicular magnetization;
其中，所述导电材料层、磁性偏置层以及自旋轨道矩材料层共同构成自旋轨道力矩磁存储器件的底电极结构。Wherein, the conductive material layer, the magnetic bias layer and the spin-orbit moment material layer jointly constitute the bottom electrode structure of the spin-orbit moment magnetic storage device.
可选地，所述导电材料层采用Cu、W、Ti、Ta、Co及其合金中的至少一种。Optionally, the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
可选地，所述磁性偏置层采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。Optionally, the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
可选地，还包括：非磁性隔离层，所述非磁性隔离层与所述磁性偏置层一一对应，所述非磁性隔离层位于所述磁性偏置层和所述自旋轨道矩材料层之间，所述导电材料层、磁性偏置层、非磁性隔离层以及自旋轨道矩材料层共同构成自旋轨道力矩磁存储器件的底电极结构。Optionally, it further includes: a non-magnetic isolation layer, the non-magnetic isolation layer corresponds to the magnetic bias layer one-to-one, and the non-magnetic isolation layer is located between the magnetic bias layer and the spin-orbit moment material Between the layers, the conductive material layer, the magnetic bias layer, the non-magnetic isolation layer and the spin-orbit moment material layer jointly constitute the bottom electrode structure of the spin-orbit moment magnetic storage device.
可选地，所述非磁性隔离层采用Pt、Ta、Ti、W中的一种或几种的组合。Optionally, the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
第三方面，本发明提供一种自旋轨道力矩磁存储器件的制备方法，包括：In a third aspect, the present invention provides a method for manufacturing a spin-orbit torque magnetic storage device, including:
提供衬底；Provide substrate;
在所述衬底上方沉积介电层，并在所述介电层中刻蚀出间隔设置的多个通孔；Depositing a dielectric layer on the substrate, and etching a plurality of through holes arranged at intervals in the dielectric layer;
在所述通孔内依次形成导电材料层和磁性偏置层；Sequentially forming a conductive material layer and a magnetic bias layer in the through hole;
在所述介电层上方形成自旋轨道矩材料层；Forming a spin-orbit moment material layer above the dielectric layer;
在所述自旋轨道矩材料层上方形成磁性隧道结堆叠件；Forming a magnetic tunnel junction stack above the spin-orbit moment material layer;
对所述磁性偏置层进行面内磁化，以及，对所述磁性隧道结堆叠件进行垂直磁化。The magnetic bias layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
可选地，所述导电材料层采用Cu、W、Ti、Ta、Co及其合金中的至少一种。Optionally, the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
可选地，所述磁性偏置层采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。Optionally, the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
可选地，在所述介电层中刻蚀出通孔后，在所述通孔内依次形成导电材料层、磁性偏置层和非磁性隔离层，之后在所述介电层上方形成自旋轨道矩材料层。Optionally, after a through hole is etched in the dielectric layer, a conductive material layer, a magnetic bias layer, and a non-magnetic isolation layer are sequentially formed in the through hole, and then a self-contained layer is formed above the dielectric layer. Spin orbital moment material layer.
可选地，所述非磁性隔离层采用Pt、Ta、Ti、W中的一种或几种的组合。Optionally, the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
第四方面，本发明提供一种自旋轨道力矩磁存储器件的制备方法，包括：In a fourth aspect, the present invention provides a method for manufacturing a spin-orbit torque magnetic storage device, including:
提供衬底；Provide substrate;
在所述衬底上方沉积介电层，并在所述介电层中刻蚀出间隔设置的多个通孔；Depositing a dielectric layer on the substrate, and etching a plurality of through holes arranged at intervals in the dielectric layer;
在所述通孔内形成导电材料层，所述导电材料层充满所述通孔；Forming a conductive material layer in the through hole, and the conductive material layer fills the through hole;
在所述通孔上方一一对应地形成磁性偏置层；A magnetic bias layer is formed one-to-one above the through holes;
在所述磁性偏置层上方形成自旋轨道矩材料层；Forming a spin-orbit moment material layer above the magnetic bias layer;
在所述自旋轨道矩材料层上方形成磁性隧道结堆叠件；Forming a magnetic tunnel junction stack above the spin-orbit moment material layer;
对所述磁性偏置层进行面内磁化，以及，对所述磁性隧道结堆叠件进行垂直磁化。The magnetic bias layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
可选地，所述导电材料层采用Cu、W、Ti、Ta、Co及其合金中的至少一种。Optionally, the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
可选地，所述磁性偏置层采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。Optionally, the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
可选地，形成导电材料层之后，在所述通孔上方一一对应地形成磁性偏置层和非磁性隔离层；之后，在所述非磁性隔离层上方形成自旋轨道矩材料层。Optionally, after the conductive material layer is formed, a magnetic bias layer and a non-magnetic isolation layer are formed one-to-one above the through holes; then, a spin-orbit moment material layer is formed above the non-magnetic isolation layer.
可选地，所述非磁性隔离层采用Pt、Ta、Ti、W中的一种或几种的组合。Optionally, the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
本发明提供的自旋轨道力矩磁存储器件及其制备方法，改进器件底电极结 构，在底电极结构中引入磁性偏置层，利用改进的底电极结构实现SOT-MRAM自由层确定方向的翻转。The spin-orbit torque magnetic storage device and the preparation method thereof provided by the present invention improve the bottom electrode structure of the device, introduce a magnetic bias layer into the bottom electrode structure, and use the improved bottom electrode structure to realize the inversion of the determined direction of the SOT-MRAM free layer.
附图说明Description of the drawings
图1为本发明一实施例的自旋轨道力矩磁存储器件的结构示意图；FIG. 1 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to an embodiment of the present invention;
图2为本发明一实施例的自旋轨道力矩磁存储器件的结构示意图；2 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to an embodiment of the present invention;
图3为本发明一实施例的自旋轨道力矩磁存储器件的结构示意图；3 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to an embodiment of the present invention;
图4为本发明一实施例的自旋轨道力矩磁存储器件的结构示意图。FIG. 4 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to an embodiment of the present invention.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
在本发明的实施方式的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。In the description of the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", " The orientation or positional relationship indicated by "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention And to simplify the description, rather than indicating or implying that the pointed device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention.
实施例1Example 1
本实施例提供一种自旋轨道力矩磁存储器件，如图1所示，图1示出了两个存储单元的截面结构，该器件包括：衬底101、介电层102、导电材料层104、磁性偏置层105、自旋轨道矩材料层107以及磁性隧道结堆叠件108，其中，This embodiment provides a spin-orbit torque magnetic memory device, as shown in FIG. 1, which shows a cross-sectional structure of two memory cells. The device includes: a substrate 101, a dielectric layer 102, and a conductive material layer 104 , The magnetic bias layer 105, the spin-orbit moment material layer 107 and the magnetic tunnel junction stack 108, where
介电层102位于衬底101上方，且介电层102中设置有间隔设置的多个通 孔，导电材料层104和磁性偏置层105位于该多个通孔内，其中导电材料层104与衬底101接触，磁性偏置层105位于导电材料层104上方，且磁性偏置层105的磁化方向为面内磁化，导电材料层104为导电金属，例如采用Cu、W、Ti、Ta、Co及其合金中的至少一种，最常用的Cu，磁性偏置层105为一层磁性导电金属薄膜，例如采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。自旋轨道矩材料层107位于介电层102上方，本实施中，自旋轨道矩材料层107与磁性偏置层105接触，磁性隧道结堆叠件108位于自旋轨道矩材料层107上方，且每个磁性隧道结堆叠件108处于两个相邻的通孔之间的位置，本实施例中，磁性隧道结堆叠件108的磁化方向为垂直磁化。需要说明的是，本发明不对磁性隧道结堆叠件的实现形式进行限定，图1中仅示出了磁性隧道结堆叠件108的自由层、势垒层和参考层，其中自由层靠近自旋轨道矩材料层107。The dielectric layer 102 is located above the substrate 101, and the dielectric layer 102 is provided with a plurality of through holes spaced apart, the conductive material layer 104 and the magnetic bias layer 105 are located in the plurality of through holes, wherein the conductive material layer 104 and The substrate 101 is in contact, the magnetic bias layer 105 is located above the conductive material layer 104, and the magnetization direction of the magnetic bias layer 105 is in-plane magnetization, and the conductive material layer 104 is a conductive metal, such as Cu, W, Ti, Ta, Co At least one of its alloys, Cu is the most commonly used, and the magnetic bias layer 105 is a magnetic conductive metal film, for example, at least one of Co, CoFe, Ni, CoFeB and its alloys are used. The spin orbit moment material layer 107 is located above the dielectric layer 102. In this embodiment, the spin orbit moment material layer 107 is in contact with the magnetic bias layer 105, and the magnetic tunnel junction stack 108 is located above the spin orbit moment material layer 107, and Each magnetic tunnel junction stack 108 is located between two adjacent through holes. In this embodiment, the magnetization direction of the magnetic tunnel junction stack 108 is perpendicular magnetization. It should be noted that the present invention does not limit the implementation form of the magnetic tunnel junction stack. FIG. 1 only shows the free layer, barrier layer and reference layer of the magnetic tunnel junction stack 108, where the free layer is close to the spin orbit.角材料层107。 Moment material layer 107.
本实施例提供的自旋轨道力矩磁存储器件，导电材料层、磁性偏置层和自旋轨道矩材料层共同构成器件的底电极结构，与现有技术相比，在底电极结构中引入了面内磁化的磁性偏置层，在磁性隧道结的自由层产生一个水平的杂散磁场，无需外部磁场即可实现SOT-MRAM自由层确定方向的翻转。同时，将磁性偏置层作为底电极的一部分，只需磁性偏置层的磁化方向一致，则一个自由层对应的磁性偏置层对其他自由层的杂散磁场方向就一致，能够避免偏置层在自由层上引起的近邻效应(近邻位元杂散场与本身位元杂散场方向不一致)。In the spin-orbit moment magnetic storage device provided by this embodiment, the conductive material layer, the magnetic bias layer, and the spin-orbit moment material layer together constitute the bottom electrode structure of the device. Compared with the prior art, the bottom electrode structure is introduced The magnetic bias layer with in-plane magnetization generates a horizontal stray magnetic field in the free layer of the magnetic tunnel junction, and the free layer of the SOT-MRAM can be reversed in the direction determined without an external magnetic field. At the same time, the magnetic bias layer is used as a part of the bottom electrode. As long as the magnetization direction of the magnetic bias layer is the same, the direction of the stray magnetic field of the magnetic bias layer corresponding to one free layer to other free layers will be the same, which can avoid bias The neighboring effect caused by the layer on the free layer (the direction of the neighboring bit stray field is inconsistent with its own bit stray field).
实施例2Example 2
图2是本发明另一实施例的自旋轨道力矩磁存储器件的结构示意图。在图1结构的基础上增加了一层非磁性隔离层106，非磁性隔离层106位于通孔内，设置在磁性偏置层105上方，此时，自旋轨道矩材料层107与非磁性隔离层106接触。非磁性隔离层106为一层非磁性导电金属薄膜，例如采用Pt、Ta、Ti、W 中的一种或几种的组合。2 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to another embodiment of the present invention. A non-magnetic isolation layer 106 is added on the basis of the structure in FIG. Layer 106 contacts. The non-magnetic isolation layer 106 is a non-magnetic conductive metal film, for example, one or a combination of Pt, Ta, Ti, and W is used.
在磁性偏置层105(如Co)和自旋轨道矩材料层107之间插入一层非磁性隔离层106，能够阻隔SOT效应，提升磁性偏置层105的稳定性。另外，磁性偏置层105(如Co)容易被氧化，在其上覆盖非磁金属层能有效隔绝Co与空气的接触，减小氧化。A non-magnetic isolation layer 106 is inserted between the magnetic bias layer 105 (such as Co) and the spin-orbit moment material layer 107, which can block the SOT effect and improve the stability of the magnetic bias layer 105. In addition, the magnetic bias layer 105 (such as Co) is easily oxidized, and covering it with a non-magnetic metal layer can effectively isolate the contact between Co and the air and reduce oxidation.
对于实施例1和实施例2的自旋轨道力矩磁存储器件，按照如下工艺流程进行制备：For the spin-orbit torque magnetic storage devices of Example 1 and Example 2, they were prepared according to the following process flow:
步骤1：提供衬底；Step 1: Provide substrate;
步骤2：在衬底上沉积介电层，并在介电层中通过刻蚀形成间隔设置的多个通孔；Step 2: Depositing a dielectric layer on the substrate, and forming a plurality of through holes arranged at intervals in the dielectric layer by etching;
步骤3：在通孔内依次形成导电材料层、磁性偏置层和非磁性隔离层(如果没有非磁性隔离层，则只形成导电材料层和磁性偏置层)；Step 3: In the through hole, a conductive material layer, a magnetic bias layer and a non-magnetic isolation layer are sequentially formed (if there is no non-magnetic isolation layer, only the conductive material layer and the magnetic bias layer are formed);
具体地，可以先依次沉积导电材料层、磁性偏置层和非磁性隔离层，然后进行CMP(化学机械剖光)工艺，剖光终点控制在介电层表面。Specifically, a conductive material layer, a magnetic bias layer, and a non-magnetic isolation layer can be deposited sequentially, and then a CMP (chemical mechanical profiling) process is performed, and the profiling end point is controlled on the surface of the dielectric layer.
步骤4：在介电层上方形成自旋轨道矩材料层，一般通过沉积工艺；Step 4: Form a spin-orbit moment material layer on the dielectric layer, generally through a deposition process;
步骤5：在自旋轨道矩材料层上方形成磁性隧道结堆叠件；Step 5: Form a magnetic tunnel junction stack above the spin-orbital moment material layer;
具体地，先沉积磁性隧道结各层材料，然后通过光刻和刻蚀，可形成磁性隧道结堆叠件。Specifically, the materials of each layer of the magnetic tunnel junction are deposited first, and then through photolithography and etching, a magnetic tunnel junction stack can be formed.
步骤6：对磁性偏置层进行面内磁化，以及，对磁性隧道结堆叠件进行垂直磁化。Step 6: In-plane magnetization of the magnetic bias layer, and perpendicular magnetization of the magnetic tunnel junction stack.
对于各层使用的材料，可参照实施例1和实施例2中的描述，不再赘述。For the materials used in each layer, please refer to the description in Embodiment 1 and Embodiment 2, and will not be repeated.
采用上述制备工艺，磁性偏置层和非磁性隔离层生长在通孔内部，工艺实现简单，省掉了磁性偏置层和非磁性隔离层的刻蚀。By adopting the above preparation process, the magnetic bias layer and the non-magnetic isolation layer are grown inside the through hole, the process is simple to realize, and the etching of the magnetic bias layer and the non-magnetic isolation layer is omitted.
实施例3Example 3
本实施例提供一种自旋轨道力矩磁存储器件，如图3所示，图3示出了两个存储单元的截面结构，该器件包括：衬底301、介电层302、导电材料层304、磁性偏置层305、自旋轨道矩材料层307以及磁性隧道结堆叠件308，其中，This embodiment provides a spin-orbit torque magnetic memory device, as shown in FIG. 3, which shows a cross-sectional structure of two memory cells. The device includes a substrate 301, a dielectric layer 302, and a conductive material layer 304. , The magnetic bias layer 305, the spin-orbit moment material layer 307, and the magnetic tunnel junction stack 308, wherein,
介电层302位于衬底301上方，且介电层302中设置有间隔设置的多个通孔，导电材料层304位于通孔内并充满通孔，与衬底301接触。导电材料层304为导电金属，例如采用Cu、W、Ti、Ta、Co及其合金中的至少一种，最常用的Cu。磁性偏置层305位于通孔上方，与通孔一一对应，且磁性偏置层305的磁化方向为面内磁化。磁性偏置层305为一层磁性导电金属薄膜，例如采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。自旋轨道矩材料层307位于磁性偏置层305上方，磁性隧道结堆叠件308位于自旋轨道矩材料层307上方，且每个磁性隧道结堆叠件308处于两个相邻的通孔之间的位置，本实施例中，磁性隧道结堆叠件308的磁化方向为垂直磁化。需要说明的是，本发明不对磁性隧道结堆叠件的实现形式进行限定，图3中仅示出了磁性隧道结堆叠件308的自由层、势垒层和参考层，其中自由层靠近自旋轨道矩材料层307。The dielectric layer 302 is located above the substrate 301, and the dielectric layer 302 is provided with a plurality of through holes arranged at intervals. The conductive material layer 304 is located in the through holes and fills the through holes, and is in contact with the substrate 301. The conductive material layer 304 is a conductive metal, such as at least one of Cu, W, Ti, Ta, Co, and alloys thereof, and the most commonly used Cu is used. The magnetic bias layer 305 is located above the through holes, corresponding to the through holes one-to-one, and the magnetization direction of the magnetic bias layer 305 is in-plane magnetization. The magnetic bias layer 305 is a layer of magnetic conductive metal film, for example, at least one of Co, CoFe, Ni, CoFeB and alloys thereof is used. The spin orbit moment material layer 307 is located above the magnetic bias layer 305, the magnetic tunnel junction stack 308 is located above the spin orbit moment material layer 307, and each magnetic tunnel junction stack 308 is located between two adjacent through holes In this embodiment, the magnetization direction of the magnetic tunnel junction stack 308 is perpendicular magnetization. It should be noted that the present invention does not limit the implementation form of the magnetic tunnel junction stack. FIG. 3 only shows the free layer, barrier layer and reference layer of the magnetic tunnel junction stack 308, where the free layer is close to the spin orbit.角材料层307。 Moment material layer 307.
相比于实施例1，实施例1的磁性偏置层生长在通孔内，而实施例3的磁性偏置层生长在通孔外，只是工艺有所区别，能够实现相同的技术效果，即无需外部磁场即可实现SOT-MRAM自由层确定方向的翻转。Compared with Example 1, the magnetic bias layer of Example 1 is grown in the through hole, while the magnetic bias layer of Example 3 is grown outside the through hole, but the process is different, and the same technical effect can be achieved, namely The free layer of SOT-MRAM can be reversed in the direction determined without an external magnetic field.
实施例4Example 4
图4是本发明另一实施例的自旋轨道力矩磁存储器件的结构示意图。在图3结构的基础上增加了一层非磁性隔离层306，非磁性隔离层306与磁性偏置层305一一对应，非磁性隔离层306位于磁性偏置层305和自旋轨道矩材料层307之间。非磁性隔离层306为一层非磁性导电金属薄膜，例如采用Pt、Ta、Ti、W 中的一种或几种的组合。4 is a schematic structural diagram of a spin-orbit torque magnetic storage device according to another embodiment of the present invention. On the basis of the structure of FIG. 3, a non-magnetic isolation layer 306 is added. The non-magnetic isolation layer 306 corresponds to the magnetic bias layer 305 one-to-one. The non-magnetic isolation layer 306 is located in the magnetic bias layer 305 and the spin-orbit moment material layer. 307 between. The non-magnetic isolation layer 306 is a non-magnetic conductive metal film, for example, one or a combination of Pt, Ta, Ti, and W is used.
在磁性偏置层305(如Co)和自旋轨道矩材料层307之间插入一层非磁性隔离层306，能够阻隔SOT效应，提升磁性偏置层305的稳定性。另外，磁性偏置层305(如Co)容易被氧化，在其上覆盖非磁金属层能有效隔绝Co与空气的接触，减小氧化。A non-magnetic isolation layer 306 is inserted between the magnetic bias layer 305 (such as Co) and the spin-orbit moment material layer 307, which can block the SOT effect and improve the stability of the magnetic bias layer 305. In addition, the magnetic bias layer 305 (such as Co) is easily oxidized, and covering it with a non-magnetic metal layer can effectively isolate the contact between Co and air and reduce oxidation.
对于实施例3和实施例4的自旋轨道力矩磁存储器件，按照如下工艺流程进行制备：For the spin-orbit torque magnetic storage devices of Example 3 and Example 4, they were prepared according to the following process flow:
步骤1：提供衬底；Step 1: Provide substrate;
步骤2：在衬底上沉积介电层，并在介电层中通过刻蚀形成间隔设置的多个通孔；Step 2: Depositing a dielectric layer on the substrate, and forming a plurality of through holes arranged at intervals in the dielectric layer by etching;
步骤3：在通孔内形成导电材料层，所述导电材料层充满通孔；Step 3: Form a conductive material layer in the through hole, and the conductive material layer is filled with the through hole;
步骤4：在通孔上方一一对应地形成磁性偏置层和非磁性隔离层(如果没有非磁性隔离层，则只形成磁性偏置层)；Step 4: Form a magnetic bias layer and a non-magnetic isolation layer in one-to-one correspondence above the through holes (if there is no non-magnetic isolation layer, only the magnetic bias layer is formed);
具体地，先沉积磁性偏置层和非磁性隔离层的金属材料，然后通过光刻和刻蚀工艺得到磁性偏置层和非磁性隔离层，然后沉积介电质并进行CMP(化学机械剖光)工艺。Specifically, the metal materials of the magnetic bias layer and the non-magnetic isolation layer are deposited first, and then the magnetic bias layer and the non-magnetic isolation layer are obtained through photolithography and etching processes, and then the dielectric is deposited and CMP (chemical mechanical profiling) is performed. ) Process.
步骤5：在非磁性隔离层上方形成自旋轨道矩材料层，一般通过沉积工艺；Step 5: forming a spin-orbit moment material layer above the non-magnetic isolation layer, generally through a deposition process;
步骤6：在自旋轨道矩材料层上方形成磁性隧道结堆叠件；Step 6: forming a magnetic tunnel junction stack above the spin-orbital moment material layer;
具体地，先沉积磁性隧道结各层材料，然后通过光刻和刻蚀，可形成磁性隧道结堆叠件。Specifically, the materials of each layer of the magnetic tunnel junction are deposited first, and then through photolithography and etching, a magnetic tunnel junction stack can be formed.
步骤7：对磁性偏置层进行面内磁化，以及，对磁性隧道结堆叠件进行垂直磁化。Step 7: In-plane magnetization of the magnetic bias layer, and perpendicular magnetization of the magnetic tunnel junction stack.
对于各层使用的材料，可参照实施例3和实施例4中的描述，不再赘述。For the materials used in each layer, please refer to the description in Embodiment 3 and Embodiment 4, and will not be repeated here.
采用上述制备工艺，磁性偏置层和非磁性隔离层生长在通孔外，需要增加对应的光刻和刻蚀，得到的磁性薄膜性能更加优良，表面更平整。By adopting the above preparation process, the magnetic bias layer and the non-magnetic isolation layer are grown outside the through hole, and corresponding photolithography and etching are required to be added, so that the obtained magnetic film has better performance and a smoother surface.
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited to this. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. All should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (20)

  1. 一种自旋轨道力矩磁存储器件，其特征在于，包括：A spin-orbit torque magnetic storage device, which is characterized in that it comprises:
    衬底；Substrate
    介电层，所述介电层位于所述衬底上方，所述介电层中设置有间隔设置的多个通孔；A dielectric layer, the dielectric layer is located above the substrate, and a plurality of through holes are arranged at intervals in the dielectric layer;
    导电材料层，位于所述通孔内，与所述衬底接触；A conductive material layer located in the through hole and in contact with the substrate;
    磁性偏置层，位于所述通孔内，并且设置在所述导电材料层上方，所述磁性偏置层的磁化方向为面内磁化；A magnetic bias layer located in the through hole and above the conductive material layer, and the magnetization direction of the magnetic bias layer is in-plane magnetization;
    自旋轨道矩材料层，位于所述介电层上方，与所述磁性偏置层接触；A spin-orbit moment material layer located above the dielectric layer and in contact with the magnetic bias layer;
    磁性隧道结堆叠件，位于所述自旋轨道矩材料层上方，且处于两个相邻通孔之间的位置，所述磁性隧道结堆叠件的磁化方向为垂直磁化；The magnetic tunnel junction stack is located above the spin-orbit moment material layer and is located between two adjacent through holes, and the magnetization direction of the magnetic tunnel junction stack is perpendicular magnetization;
    其中，所述导电材料层、磁性偏置层以及自旋轨道矩材料层共同构成自旋轨道力矩磁存储器件的底电极结构。Wherein, the conductive material layer, the magnetic bias layer and the spin-orbit moment material layer jointly constitute the bottom electrode structure of the spin-orbit moment magnetic storage device.
  2. 根据权利要求1所述的自旋轨道力矩磁存储器件，其特征在于，所述导电材料层采用Cu、W、Ti、Ta、Co及其合金中的至少一种。The spin-orbit torque magnetic storage device according to claim 1, wherein the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
  3. 根据权利要求1所述的自旋轨道力矩磁存储器件，其特征在于，所述磁性偏置层采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。The spin-orbit torque magnetic storage device according to claim 1, wherein the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
  4. 根据权利要求1所述的自旋轨道力矩磁存储器件，其特征在于，还包括：非磁性隔离层，所述非磁性隔离层位于所述通孔内，并且设置在所述磁性偏置层上方；The spin-orbit torque magnetic storage device according to claim 1, further comprising: a non-magnetic isolation layer, the non-magnetic isolation layer is located in the through hole and disposed above the magnetic bias layer ；
    对应地，所述自旋轨道矩材料层与所述非磁性隔离层接触，所述导电材料层、磁性偏置层、非磁性隔离层以及自旋轨道矩材料层共同构成自旋轨道力矩磁存储器件的底电极结构。Correspondingly, the spin-orbit moment material layer is in contact with the non-magnetic isolation layer, and the conductive material layer, the magnetic bias layer, the non-magnetic isolation layer, and the spin-orbit moment material layer together constitute a spin-orbit moment magnetic memory The bottom electrode structure of the piece.
  5. 根据权利要求4所述的自旋轨道力矩磁存储器件，其特征在于，所述非磁性隔离层采用Pt、Ta、Ti、W中的一种或几种的组合。The spin-orbit torque magnetic storage device according to claim 4, wherein the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
  6. 一种自旋轨道力矩磁存储器件，其特征在于，包括：A spin-orbit torque magnetic storage device, which is characterized in that it comprises:
    衬底；Substrate
    介电层，所述介电层位于所述衬底上方，所述介电层中设置有间隔设置的多个通孔；A dielectric layer, the dielectric layer is located above the substrate, and a plurality of through holes are arranged at intervals in the dielectric layer;
    导电材料层，位于所述通孔内并充满所述通孔，与所述衬底接触；A conductive material layer located in the through hole and filling the through hole, in contact with the substrate;
    磁性偏置层，位于所述通孔上方，与所述通孔一一对应，所述磁性偏置层的磁化方向为面内磁化；The magnetic bias layer is located above the through hole and corresponds to the through hole one-to-one, and the magnetization direction of the magnetic bias layer is in-plane magnetization;
    自旋轨道矩材料层，位于所述磁性偏置层上方；A spin-orbit moment material layer located above the magnetic bias layer;
    磁性隧道结堆叠件，位于所述自旋轨道矩材料层上方，且处于两个相邻通孔之间的位置，所述磁性隧道结堆叠件的磁化方向为垂直磁化；The magnetic tunnel junction stack is located above the spin-orbit moment material layer and is located between two adjacent through holes, and the magnetization direction of the magnetic tunnel junction stack is perpendicular magnetization;
    其中，所述导电材料层、磁性偏置层以及自旋轨道矩材料层共同构成自旋轨道力矩磁存储器件的底电极结构。Wherein, the conductive material layer, the magnetic bias layer and the spin-orbit moment material layer jointly constitute the bottom electrode structure of the spin-orbit moment magnetic storage device.
  7. 根据权利要求6所述的自旋轨道力矩磁存储器件，其特征在于，所述导电材料层采用Cu、W、Ti、Ta、Co及其合金中的至少一种。The spin-orbit torque magnetic storage device according to claim 6, wherein the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
  8. 根据权利要求6所述的自旋轨道力矩磁存储器件，其特征在于，所述磁性偏置层采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。7. The spin-orbit torque magnetic storage device according to claim 6, wherein the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
  9. 根据权利要求6所述的自旋轨道力矩磁存储器件，其特征在于，还包括：非磁性隔离层，所述非磁性隔离层与所述磁性偏置层一一对应，所述非磁性隔离层位于所述磁性偏置层和所述自旋轨道矩材料层之间，所述导电材料层、磁性偏置层、非磁性隔离层以及自旋轨道矩材料层共同构成自旋轨道力矩磁存储器件的底电极结构。The spin-orbit torque magnetic storage device according to claim 6, further comprising: a non-magnetic isolation layer, the non-magnetic isolation layer corresponds to the magnetic bias layer one-to-one, and the non-magnetic isolation layer Located between the magnetic bias layer and the spin orbit moment material layer, the conductive material layer, the magnetic bias layer, the non-magnetic isolation layer and the spin orbit moment material layer together constitute a spin orbit moment magnetic storage device The bottom electrode structure.
  10. 根据权利要求9所述的自旋轨道力矩磁存储器件，其特征在于，所述非磁性隔离层采用Pt、Ta、Ti、W中的一种或几种的组合。The spin-orbit torque magnetic storage device according to claim 9, wherein the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
  11. 一种自旋轨道力矩磁存储器件的制备方法，其特征在于，包括：A method for manufacturing a spin-orbit torque magnetic storage device, which is characterized in that it comprises:
    提供衬底；Provide substrate;
    在所述衬底上方沉积介电层，并在所述介电层中刻蚀出间隔设置的多个通孔；Depositing a dielectric layer on the substrate, and etching a plurality of through holes arranged at intervals in the dielectric layer;
    在所述通孔内依次形成导电材料层和磁性偏置层；Sequentially forming a conductive material layer and a magnetic bias layer in the through hole;
    在所述介电层上方形成自旋轨道矩材料层；Forming a spin-orbit moment material layer above the dielectric layer;
    在所述自旋轨道矩材料层上方形成磁性隧道结堆叠件；Forming a magnetic tunnel junction stack above the spin-orbit moment material layer;
    对所述磁性偏置层进行面内磁化，以及，对所述磁性隧道结堆叠件进行垂直磁化。The magnetic bias layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
  12. 根据权利要求11所述的方法，其特征在于，所述导电材料层采用Cu、W、Ti、Ta、Co及其合金中的至少一种。The method according to claim 11, wherein the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
  13. 根据权利要求11所述的方法，其特征在于，所述磁性偏置层采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。The method according to claim 11, wherein the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
  14. 根据权利要求11所述的方法，其特征在于，在所述介电层中刻蚀出通孔后，在所述通孔内依次形成导电材料层、磁性偏置层和非磁性隔离层，之后在所述介电层上方形成自旋轨道矩材料层。The method according to claim 11, wherein after the through holes are etched in the dielectric layer, a conductive material layer, a magnetic bias layer and a non-magnetic isolation layer are sequentially formed in the through holes, and then A spin-orbit moment material layer is formed above the dielectric layer.
  15. 根据权利要求14所述的方法，其特征在于，所述非磁性隔离层采用Pt、Ta、Ti、W中的一种或几种的组合。The method according to claim 14, wherein the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
  16. 一种自旋轨道力矩磁存储器件的制备方法，其特征在于，包括：A method for manufacturing a spin-orbit torque magnetic storage device, which is characterized in that it comprises:
    提供衬底；Provide substrate;
    在所述衬底上方沉积介电层，并在所述介电层中刻蚀出间隔设置的多个通 孔；Depositing a dielectric layer on the substrate, and etching a plurality of through holes arranged at intervals in the dielectric layer;
    在所述通孔内形成导电材料层，所述导电材料层充满所述通孔；Forming a conductive material layer in the through hole, and the conductive material layer fills the through hole;
    在所述通孔上方一一对应地形成磁性偏置层；A magnetic bias layer is formed one-to-one above the through holes;
    在所述磁性偏置层上方形成自旋轨道矩材料层；Forming a spin-orbit moment material layer above the magnetic bias layer;
    在所述自旋轨道矩材料层上方形成磁性隧道结堆叠件；Forming a magnetic tunnel junction stack above the spin-orbit moment material layer;
    对所述磁性偏置层进行面内磁化，以及，对所述磁性隧道结堆叠件进行垂直磁化。The magnetic bias layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
  17. 根据权利要求16所述的方法，其特征在于，所述导电材料层采用Cu、W、Ti、Ta、Co及其合金中的至少一种。The method according to claim 16, wherein the conductive material layer uses at least one of Cu, W, Ti, Ta, Co and alloys thereof.
  18. 根据权利要求16所述的方法，其特征在于，所述磁性偏置层采用Co、CoFe、Ni、CoFeB及其合金中的至少一种。The method according to claim 16, wherein the magnetic bias layer uses at least one of Co, CoFe, Ni, CoFeB and alloys thereof.
  19. 根据权利要求16所述的方法，其特征在于，形成导电材料层之后，在所述通孔上方一一对应地形成磁性偏置层和非磁性隔离层；之后，在所述非磁性隔离层上方形成自旋轨道矩材料层。16. The method of claim 16, wherein after the conductive material layer is formed, a magnetic bias layer and a non-magnetic isolation layer are formed above the through holes in a one-to-one correspondence; Form a spin-orbital moment material layer.
  20. 根据权利要求19所述的方法，其特征在于，所述非磁性隔离层采用Pt、Ta、Ti、W中的一种或几种的组合。The method according to claim 19, wherein the non-magnetic isolation layer uses one or a combination of Pt, Ta, Ti, and W.
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111490156A (en) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 Spin orbit torque magnetic memory device and preparation method thereof
CN116018900A (en) * 2020-11-09 2023-04-25 华为技术有限公司 Spin-orbit torque magnetic memory, manufacturing method thereof and memory device
CN113690366A (en) * 2021-08-17 2021-11-23 中国科学院微电子研究所 SOT-MRAM memory cell and preparation method thereof
CN113690367A (en) * 2021-08-17 2021-11-23 中国科学院微电子研究所 SOT-MRAM memory cell and preparation method thereof
US20230255122A1 (en) * 2022-02-10 2023-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Memory structure and formation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108269915A (en) * 2017-01-02 2018-07-10 Imec 非营利协会 A kind of method and magnetoresistance device for forming magnetoresistance device
WO2019045055A1 (en) * 2017-09-04 2019-03-07 Tdk株式会社 Spin orbit torque-type magnetization switching element and magnetic memory
CN110462814A (en) * 2018-03-08 2019-11-15 Tdk株式会社 Spinning element and magnetic memory
WO2019230351A1 (en) * 2018-05-31 2019-12-05 Tdk株式会社 Spin-orbit torque magnetoresistance effect element, and magnetic memory
CN110660420A (en) * 2018-06-28 2020-01-07 中电海康集团有限公司 MRAM memory cell
CN110660899A (en) * 2018-06-29 2020-01-07 英特尔公司 Multi-layer spin orbit torque electrode for perpendicular magnetic random access memory
CN111490156A (en) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 Spin orbit torque magnetic memory device and preparation method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1195294C (en) * 1994-03-10 2005-03-30 国际商业机器公司 Edge offset magnetic-resistance sensor
US6114719A (en) * 1998-05-29 2000-09-05 International Business Machines Corporation Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell
US6023395A (en) * 1998-05-29 2000-02-08 International Business Machines Corporation Magnetic tunnel junction magnetoresistive sensor with in-stack biasing
US8563147B2 (en) * 2009-06-24 2013-10-22 Headway Technologies, Inc. Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization
US20150287426A1 (en) * 2014-04-07 2015-10-08 HGST Netherlands B.V. Magnetic read head having spin hall effect layer
US20160300999A1 (en) * 2015-04-07 2016-10-13 Ge Yi Magnetoresistive Random Access Memory Cell
US9620562B2 (en) * 2015-06-02 2017-04-11 Western Digital Technologies, Inc. Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film
US10720570B2 (en) * 2017-06-12 2020-07-21 Western Digital Technologies, Inc. Magnetic sensor using spin hall effect
US10229723B1 (en) * 2017-09-12 2019-03-12 Sandisk Technologies Llc Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten
WO2019125388A1 (en) * 2017-12-18 2019-06-27 Intel Corporation Spin orbit coupling based oscillator using exchange bias

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108269915A (en) * 2017-01-02 2018-07-10 Imec 非营利协会 A kind of method and magnetoresistance device for forming magnetoresistance device
WO2019045055A1 (en) * 2017-09-04 2019-03-07 Tdk株式会社 Spin orbit torque-type magnetization switching element and magnetic memory
CN110462814A (en) * 2018-03-08 2019-11-15 Tdk株式会社 Spinning element and magnetic memory
WO2019230351A1 (en) * 2018-05-31 2019-12-05 Tdk株式会社 Spin-orbit torque magnetoresistance effect element, and magnetic memory
CN110660420A (en) * 2018-06-28 2020-01-07 中电海康集团有限公司 MRAM memory cell
CN110660899A (en) * 2018-06-29 2020-01-07 英特尔公司 Multi-layer spin orbit torque electrode for perpendicular magnetic random access memory
CN111490156A (en) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 Spin orbit torque magnetic memory device and preparation method thereof

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