CN111490156A - Spin orbit torque magnetic memory device and preparation method thereof - Google Patents
Spin orbit torque magnetic memory device and preparation method thereof Download PDFInfo
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- CN111490156A CN111490156A CN202010319956.3A CN202010319956A CN111490156A CN 111490156 A CN111490156 A CN 111490156A CN 202010319956 A CN202010319956 A CN 202010319956A CN 111490156 A CN111490156 A CN 111490156A
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 57
- 239000004020 conductor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000005415 magnetization Effects 0.000 claims description 25
- 238000002955 isolation Methods 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 229910052715 tantalum Inorganic materials 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- 229910052721 tungsten Inorganic materials 0.000 claims description 20
- 125000006850 spacer group Chemical group 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 12
- 229910003321 CoFe Inorganic materials 0.000 claims description 10
- 229910019236 CoFeB Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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Abstract
The invention provides a spin orbit torque magnetic memory device and a preparation method thereof. The device comprises: the magnetic tunnel junction comprises a substrate, a dielectric layer above the substrate, a conductive material layer inside a dielectric layer through hole, a magnetic bias layer inside the dielectric layer through hole or above the dielectric layer through hole, a spin orbit torque material layer above the magnetic bias layer, and a magnetic tunnel junction stack above the spin orbit torque material layer. According to the device, the conducting material layer, the magnetic bias layer and the spin orbit torque material layer jointly form a bottom electrode structure of the spin orbit torque magnetic memory device, and the SOT-MRAM free layer can be turned in the determined direction by using the bottom electrode structure.
Description
Technical Field
The invention relates to the technical field of magnetic memory devices, in particular to a spin orbit torque magnetic memory device and a preparation method thereof.
Background
A Spin-Orbit Torque magnetic memory (Spin-Orbit Torque MRAM, SOT-MRAM for short) is used for overturning a magnetic tunnel junction by utilizing Spin-Orbit Torque, so that the situation that write-in current frequently passes through a barrier layer of the magnetic tunnel junction is avoided, the durability of a device can be improved, and the aim that the MRAM is almost erased for infinite times is really realized. SOT-MRAM is expected to replace conventional STT-MRAM as a mainstream memory in the future.
However, the practical application of the SOT-MRAM still has several bottlenecks, one of which is that an external magnetic field is required to realize the inversion of the determined direction of the free layer of the perpendicular magnetic tunnel junction p-MTJ when the SOT-MRAM is written, which affects the nano-processing technology of the SOT-MRAM and hinders the development of the continuous miniaturization of the SOT-MRAM.
Disclosure of Invention
In order to solve the problems, the invention provides a spin orbit torque magnetic memory device and a preparation method thereof, wherein the bottom electrode structure of the device is improved, and the SOT-MRAM free layer is turned in a determined direction by utilizing the improved bottom electrode structure.
In a first aspect, the present invention provides a spin orbit torque magnetic memory device comprising:
a substrate;
a dielectric layer located above the substrate, the dielectric layer having a plurality of through holes disposed therein at intervals;
the conductive material layer is positioned in the through hole and is in contact with the substrate;
the magnetic bias layer is positioned in the through hole and arranged above the conductive material layer, and the magnetization direction of the magnetic bias layer is in-plane magnetization;
a spin-orbit torque material layer over the dielectric layer in contact with the magnetic bias layer;
a magnetic tunnel junction stack located above the spin torque orbit material layer and between two adjacent through holes, the magnetization direction of the magnetic tunnel junction stack being perpendicular magnetization;
the conductive material layer, the magnetic bias layer and the spin orbit torque material layer jointly form a bottom electrode structure of the spin orbit torque magnetic memory device.
Optionally, the conductive material layer adopts at least one of Cu, W, Ti, Ta, Co and alloys thereof.
Optionally, the magnetic bias layer employs at least one of Co, CoFe, Ni, CoFeB, and alloys thereof.
Optionally, the method further comprises: a nonmagnetic spacer layer within the via and disposed over the magnetic biasing layer;
correspondingly, the spin orbit torque material layer is in contact with the nonmagnetic isolating layer, and the conductive material layer, the magnetic bias layer, the nonmagnetic isolating layer and the spin orbit torque material layer jointly form a bottom electrode structure of the spin orbit torque magnetic memory device.
Optionally, the nonmagnetic isolating layer is made of one or a combination of more of Pt, Ta, Ti and W.
In a second aspect, the present invention provides a spin orbit torque magnetic memory device, comprising:
a substrate;
a dielectric layer located above the substrate, the dielectric layer having a plurality of through holes disposed therein at intervals;
the conductive material layer is positioned in the through hole, filled with the through hole and contacted with the substrate;
the magnetic bias layers are positioned above the through holes and correspond to the through holes one by one, and the magnetization direction of the magnetic bias layers is in-plane magnetization;
a spin-orbit torque material layer over the magnetic bias layer;
a magnetic tunnel junction stack located above the spin torque orbit material layer and between two adjacent through holes, the magnetization direction of the magnetic tunnel junction stack being perpendicular magnetization;
the conductive material layer, the magnetic bias layer and the spin orbit torque material layer jointly form a bottom electrode structure of the spin orbit torque magnetic memory device.
Optionally, the conductive material layer adopts at least one of Cu, W, Ti, Ta, Co and alloys thereof.
Optionally, the magnetic bias layer employs at least one of Co, CoFe, Ni, CoFeB, and alloys thereof.
Optionally, the method further comprises: the non-magnetic isolation layer is in one-to-one correspondence with the magnetic bias layer, the non-magnetic isolation layer is positioned between the magnetic bias layer and the spin orbit torque material layer, and the conductive material layer, the magnetic bias layer, the non-magnetic isolation layer and the spin orbit torque material layer jointly form a bottom electrode structure of the spin orbit torque magnetic memory device.
Optionally, the nonmagnetic isolating layer is made of one or a combination of more of Pt, Ta, Ti and W.
In a third aspect, the present invention provides a method for manufacturing a spin orbit torque magnetic memory device, including:
providing a substrate;
depositing a dielectric layer above the substrate, and etching a plurality of through holes arranged at intervals in the dielectric layer;
sequentially forming a conductive material layer and a magnetic bias layer in the through hole;
forming a spin-orbit torque material layer over the dielectric layer;
forming a magnetic tunnel junction stack over the spin orbit torque material layer;
the magnetic biasing layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
Optionally, the conductive material layer adopts at least one of Cu, W, Ti, Ta, Co and alloys thereof.
Optionally, the magnetic bias layer employs at least one of Co, CoFe, Ni, CoFeB, and alloys thereof.
Optionally, after a through hole is etched in the dielectric layer, a conductive material layer, a magnetic bias layer and a nonmagnetic isolation layer are sequentially formed in the through hole, and then a spin orbit torque material layer is formed above the dielectric layer.
Optionally, the nonmagnetic isolating layer is made of one or a combination of more of Pt, Ta, Ti and W.
In a fourth aspect, the present invention provides a method of manufacturing a spin orbit torque magnetic memory device, comprising:
providing a substrate;
depositing a dielectric layer above the substrate, and etching a plurality of through holes arranged at intervals in the dielectric layer;
forming a conductive material layer in the through hole, wherein the through hole is filled with the conductive material layer;
forming magnetic bias layers above the through holes in one-to-one correspondence;
forming a spin-orbit torque material layer over the magnetic bias layer;
forming a magnetic tunnel junction stack over the spin orbit torque material layer;
the magnetic biasing layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
Optionally, the conductive material layer adopts at least one of Cu, W, Ti, Ta, Co and alloys thereof.
Optionally, the magnetic bias layer employs at least one of Co, CoFe, Ni, CoFeB, and alloys thereof.
Optionally, after forming the conductive material layer, forming a magnetic bias layer and a non-magnetic isolation layer above the through holes in one-to-one correspondence; thereafter, a spin-orbit torque material layer is formed over the nonmagnetic spacer layer.
Optionally, the nonmagnetic isolating layer is made of one or a combination of more of Pt, Ta, Ti and W.
The invention provides a spin orbit torque magnetic memory device and a preparation method thereof, which improve the bottom electrode structure of the device, introduce a magnetic bias layer into the bottom electrode structure, and realize the inversion of the determined direction of an SOT-MRAM free layer by utilizing the improved bottom electrode structure.
Drawings
FIG. 1 is a schematic diagram of a spin orbit torque magnetic memory device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a spin orbit torque magnetic memory device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a spin orbit torque magnetic memory device according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a spin orbit torque magnetic memory device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Example 1
The present embodiment provides a spin orbit torque magnetic memory device, as shown in fig. 1, fig. 1 shows a cross-sectional structure of two memory cells, the device including: a substrate 101, a dielectric layer 102, a conductive material layer 104, a magnetic bias layer 105, a spin-orbit torque material layer 107, and a magnetic tunnel junction stack 108, wherein,
the dielectric layer 102 is located above the substrate 101, a plurality of through holes are formed in the dielectric layer 102 at intervals, the conductive material layer 104 and the magnetic bias layer 105 are located in the through holes, wherein the conductive material layer 104 is in contact with the substrate 101, the magnetic bias layer 105 is located above the conductive material layer 104, the magnetization direction of the magnetic bias layer 105 is in-plane magnetization, the conductive material layer 104 is made of conductive metal, for example, at least one of Cu, W, Ti, Ta, Co and alloys thereof, most commonly used Cu, and the magnetic bias layer 105 is made of a magnetic conductive metal film, for example, at least one of Co, CoFe, Ni, CoFeB and alloys thereof. The spin-orbit torque material layer 107 is located above the dielectric layer 102, in this embodiment, the spin-orbit torque material layer 107 is in contact with the magnetic bias layer 105, the magnetic tunnel junction stack 108 is located above the spin-orbit torque material layer 107, and each magnetic tunnel junction stack 108 is located between two adjacent through holes, in this embodiment, the magnetization direction of the magnetic tunnel junction stack 108 is perpendicular magnetization. It should be noted that the present invention is not limited to the implementation of the magnetic tunnel junction stack, and only the free layer, the barrier layer and the reference layer of the magnetic tunnel junction stack 108 are shown in fig. 1, wherein the free layer is close to the spin-orbit torque material layer 107.
Compared with the prior art, the spin orbit torque magnetic memory device provided by the embodiment has the advantages that the conductive material layer, the magnetic bias layer and the spin orbit torque material layer jointly form the bottom electrode structure of the device, the magnetic bias layer magnetized in the plane is introduced into the bottom electrode structure, a horizontal stray magnetic field is generated in the free layer of the magnetic tunnel junction, and the SOT-MRAM free layer can be turned in the determined direction without an external magnetic field. Meanwhile, the magnetic bias layer is used as a part of the bottom electrode, and the directions of the stray magnetic fields of the magnetic bias layer corresponding to one free layer to other free layers are consistent only by the consistent magnetization direction of the magnetic bias layer, so that the neighbor effect (the direction of the neighbor bit stray field is inconsistent with the direction of the bit stray field of the bias layer) caused by the free layer can be avoided.
Example 2
Fig. 2 is a schematic structural view of a spin orbit torque magnetic memory device according to another embodiment of the present invention. A nonmagnetic spacer layer 106 is added to the structure of FIG. 1, the nonmagnetic spacer layer 106 is located in the via hole and is disposed above the magnetic bias layer 105, and at this time, the spin torque orbit material layer 107 is in contact with the nonmagnetic spacer layer 106. The nonmagnetic spacer layer 106 is a nonmagnetic conductive metal film, for example, one or a combination of Pt, Ta, Ti, and W.
A non-magnetic isolation layer 106 is inserted between the magnetic bias layer 105 (such as Co) and the spin-orbit torque material layer 107 to block the SOT effect and improve the stability of the magnetic bias layer 105. In addition, the magnetic bias layer 105 (such as Co) is easy to be oxidized, and the non-magnetic metal layer covered on the magnetic bias layer can effectively isolate the Co from being in contact with air, so that the oxidation is reduced.
For the spin orbit torque magnetic memory devices of example 1 and example 2, the preparation was performed according to the following process flow:
step 1: providing a substrate;
step 2: depositing a dielectric layer on a substrate, and forming a plurality of through holes arranged at intervals in the dielectric layer through etching;
and step 3: sequentially forming a conductive material layer, a magnetic bias layer and a non-magnetic isolation layer in the through hole (if the non-magnetic isolation layer is not present, only the conductive material layer and the magnetic bias layer are formed);
specifically, a conductive material layer, a magnetic bias layer and a non-magnetic isolation layer may be deposited in sequence, and then a CMP (chemical mechanical polishing) process may be performed, wherein the polishing endpoint is controlled on the surface of the dielectric layer.
And 4, step 4: forming a spin-orbit torque material layer over the dielectric layer, typically by a deposition process;
and 5: forming a magnetic tunnel junction stack over the spin torque orbital material layer;
specifically, the magnetic tunnel junction stack can be formed by depositing the magnetic tunnel junction layers of materials and then performing photolithography and etching.
Step 6: the magnetic biasing layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
For the materials used for the layers, reference may be made to the descriptions in examples 1 and 2, which are not repeated.
By adopting the preparation process, the magnetic bias layer and the non-magnetic isolation layer grow in the through hole, the process is simple to realize, and the etching of the magnetic bias layer and the non-magnetic isolation layer is omitted.
Example 3
The present embodiment provides a spin orbit torque magnetic memory device, as shown in fig. 3, fig. 3 shows a cross-sectional structure of two memory cells, the device including: a substrate 301, a dielectric layer 302, a conductive material layer 304, a magnetic bias layer 305, a spin-orbit torque material layer 307, and a magnetic tunnel junction stack 308, wherein,
a dielectric layer 302 is disposed over the substrate 301, and a plurality of through holes are disposed at intervals in the dielectric layer 302, and a conductive material layer 304 is disposed in and fills the through holes and contacts the substrate 301. The conductive material layer 304 is a conductive metal, for example, at least one of Cu, W, Ti, Ta, Co, and an alloy thereof, and most commonly Cu. The magnetic bias layer 305 is located above the through holes, corresponding to the through holes one to one, and the magnetization direction of the magnetic bias layer 305 is in-plane magnetization. The magnetic bias layer 305 is a magnetic conductive metal film, such as at least one of Co, CoFe, Ni, CoFeB, and alloys thereof. The spin-orbit torque material layer 307 is located above the magnetic bias layer 305, the magnetic tunnel junction stack 308 is located above the spin-orbit torque material layer 307, and each magnetic tunnel junction stack 308 is located at a position between two adjacent vias, in this embodiment, the magnetization direction of the magnetic tunnel junction stack 308 is perpendicular magnetization. It should be noted that the present invention is not limited to the implementation of the magnetic tunnel junction stack, and only the free layer, the barrier layer and the reference layer of the magnetic tunnel junction stack 308 are shown in fig. 3, wherein the free layer is close to the spin-orbit torque material layer 307.
Compared with embodiment 1, the magnetic bias layer of embodiment 1 is grown in the through hole, and the magnetic bias layer of embodiment 3 is grown outside the through hole, but the process is different, and the same technical effect can be achieved, that is, the inversion of the determined direction of the SOT-MRAM free layer can be achieved without an external magnetic field.
Example 4
FIG. 4 is a schematic structural diagram of a spin orbit torque magnetic memory device according to another embodiment of the present invention. A non-magnetic isolation layer 306 is added on the basis of the structure of FIG. 3, the non-magnetic isolation layer 306 is in one-to-one correspondence with the magnetic bias layer 305, and the non-magnetic isolation layer 306 is located between the magnetic bias layer 305 and the spin orbit torque material layer 307. The nonmagnetic spacer layer 306 is a nonmagnetic conductive metal film, for example, one or a combination of Pt, Ta, Ti, and W.
A non-magnetic spacer layer 306 is interposed between the magnetic bias layer 305 (e.g., Co) and the spin-orbit torque material layer 307 to block the SOT effect and improve the stability of the magnetic bias layer 305. In addition, the magnetic bias layer 305 (e.g., Co) is easily oxidized, and the covering of the non-magnetic metal layer can effectively isolate the Co from the air, thereby reducing the oxidation.
For the spin orbit torque magnetic memory devices of example 3 and example 4, the preparation was performed according to the following process flow:
step 1: providing a substrate;
step 2: depositing a dielectric layer on a substrate, and forming a plurality of through holes arranged at intervals in the dielectric layer through etching;
and step 3: forming a conductive material layer in the through hole, wherein the conductive material layer is filled in the through hole;
and 4, step 4: forming a magnetic bias layer and a non-magnetic isolation layer in one-to-one correspondence over the via hole (if there is no non-magnetic isolation layer, only the magnetic bias layer is formed);
specifically, the metal materials of the magnetic bias layer and the non-magnetic isolation layer are deposited, then the magnetic bias layer and the non-magnetic isolation layer are obtained through photoetching and etching processes, and then the dielectric is deposited and a CMP (chemical mechanical polishing) process is carried out.
And 5: forming a spin-orbit torque material layer over the nonmagnetic spacer layer, typically by a deposition process;
step 6: forming a magnetic tunnel junction stack over the spin torque orbital material layer;
specifically, the magnetic tunnel junction stack can be formed by depositing the magnetic tunnel junction layers of materials and then performing photolithography and etching.
And 7: the magnetic biasing layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
For the materials used for the layers, reference may be made to the descriptions in examples 3 and 4, which are not repeated.
By adopting the preparation process, the magnetic bias layer and the nonmagnetic isolating layer grow outside the through hole, and corresponding photoetching and etching are needed to be added, so that the obtained magnetic film has more excellent performance and smoother surface.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (20)
1. A spin orbit torque magnetic memory device, comprising:
a substrate;
a dielectric layer located above the substrate, the dielectric layer having a plurality of through holes disposed therein at intervals;
the conductive material layer is positioned in the through hole and is in contact with the substrate;
the magnetic bias layer is positioned in the through hole and arranged above the conductive material layer, and the magnetization direction of the magnetic bias layer is in-plane magnetization;
a spin-orbit torque material layer over the dielectric layer in contact with the magnetic bias layer;
a magnetic tunnel junction stack located above the spin torque orbit material layer and between two adjacent through holes, the magnetization direction of the magnetic tunnel junction stack being perpendicular magnetization;
the conductive material layer, the magnetic bias layer and the spin orbit torque material layer jointly form a bottom electrode structure of the spin orbit torque magnetic memory device.
2. The spin orbit torque magnetic memory device of claim 1, wherein the conductive material layer employs at least one of Cu, W, Ti, Ta, Co, and alloys thereof.
3. The spin orbit torque magnetic memory device of claim 1, wherein the magnetic bias layer employs at least one of Co, CoFe, Ni, CoFeB, and alloys thereof.
4. The spin orbit torque magnetic memory device of claim 1, further comprising: a nonmagnetic spacer layer within the via and disposed over the magnetic biasing layer;
correspondingly, the spin orbit torque material layer is in contact with the nonmagnetic isolating layer, and the conductive material layer, the magnetic bias layer, the nonmagnetic isolating layer and the spin orbit torque material layer jointly form a bottom electrode structure of the spin orbit torque magnetic memory device.
5. The spin orbit torque magnetic memory device of claim 4, wherein the nonmagnetic spacer layer is one or a combination of Pt, Ta, Ti and W.
6. A spin orbit torque magnetic memory device, comprising:
a substrate;
a dielectric layer located above the substrate, the dielectric layer having a plurality of through holes disposed therein at intervals;
the conductive material layer is positioned in the through hole, filled with the through hole and contacted with the substrate;
the magnetic bias layers are positioned above the through holes and correspond to the through holes one by one, and the magnetization direction of the magnetic bias layers is in-plane magnetization;
a spin-orbit torque material layer over the magnetic bias layer;
a magnetic tunnel junction stack located above the spin torque orbit material layer and between two adjacent through holes, the magnetization direction of the magnetic tunnel junction stack being perpendicular magnetization;
the conductive material layer, the magnetic bias layer and the spin orbit torque material layer jointly form a bottom electrode structure of the spin orbit torque magnetic memory device.
7. The spin orbit torque magnetic memory device of claim 6, wherein the conductive material layer employs at least one of Cu, W, Ti, Ta, Co, and alloys thereof.
8. The spin-orbit torque magnetic memory device of claim 6, wherein the magnetic bias layer employs at least one of Co, CoFe, Ni, CoFeB, and alloys thereof.
9. The spin orbit torque magnetic memory device of claim 6, further comprising: the non-magnetic isolation layer is in one-to-one correspondence with the magnetic bias layer, the non-magnetic isolation layer is positioned between the magnetic bias layer and the spin orbit torque material layer, and the conductive material layer, the magnetic bias layer, the non-magnetic isolation layer and the spin orbit torque material layer jointly form a bottom electrode structure of the spin orbit torque magnetic memory device.
10. The spin orbit torque magnetic memory device of claim 9, wherein the nonmagnetic spacer layer is one or a combination of Pt, Ta, Ti, W.
11. A method for manufacturing a spin orbit torque magnetic memory device, comprising:
providing a substrate;
depositing a dielectric layer above the substrate, and etching a plurality of through holes arranged at intervals in the dielectric layer;
sequentially forming a conductive material layer and a magnetic bias layer in the through hole;
forming a spin-orbit torque material layer over the dielectric layer;
forming a magnetic tunnel junction stack over the spin orbit torque material layer;
the magnetic biasing layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
12. The method of claim 11, wherein the conductive material layer is at least one of Cu, W, Ti, Ta, Co, and alloys thereof.
13. The method of claim 11, wherein the magnetic bias layer is at least one of Co, CoFe, Ni, CoFeB, and alloys thereof.
14. The method of claim 11, wherein after etching a via in the dielectric layer, a layer of conductive material, a magnetic bias layer, and a non-magnetic spacer layer are sequentially formed within the via, followed by forming a layer of spin-orbit torque material over the dielectric layer.
15. The method of claim 14, wherein the nonmagnetic spacer layer is one or a combination of Pt, Ta, Ti, and W.
16. A method for manufacturing a spin orbit torque magnetic memory device, comprising:
providing a substrate;
depositing a dielectric layer above the substrate, and etching a plurality of through holes arranged at intervals in the dielectric layer;
forming a conductive material layer in the through hole, wherein the through hole is filled with the conductive material layer;
forming magnetic bias layers above the through holes in one-to-one correspondence;
forming a spin-orbit torque material layer over the magnetic bias layer;
forming a magnetic tunnel junction stack over the spin orbit torque material layer;
the magnetic biasing layer is magnetized in-plane, and the magnetic tunnel junction stack is magnetized perpendicularly.
17. The method of claim 16, wherein the conductive material layer is at least one of Cu, W, Ti, Ta, Co, and alloys thereof.
18. The method of claim 16, wherein the magnetic bias layer comprises at least one of Co, CoFe, Ni, CoFeB, and alloys thereof.
19. The method of claim 16, wherein after forming the layer of conductive material, forming a magnetic bias layer and a non-magnetic spacer layer in one-to-one correspondence over the vias; thereafter, a spin-orbit torque material layer is formed over the nonmagnetic spacer layer.
20. The method of claim 19, wherein the nonmagnetic spacer layer is one or a combination of Pt, Ta, Ti, and W.
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| CN202010319956.3A CN111490156A (en) | 2020-04-21 | 2020-04-21 | Spin orbit torque magnetic memory device and preparation method thereof |
| PCT/CN2020/121889 WO2021212779A1 (en) | 2020-04-21 | 2020-10-19 | Spin-orbit torque magnetoresistive random-access memory and preparation method therefor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021212779A1 (en) * | 2020-04-21 | 2021-10-28 | 浙江驰拓科技有限公司 | Spin-orbit torque magnetoresistive random-access memory and preparation method therefor |
| CN113690366A (en) * | 2021-08-17 | 2021-11-23 | 中国科学院微电子研究所 | SOT-MRAM memory cell and preparation method thereof |
| CN113690367A (en) * | 2021-08-17 | 2021-11-23 | 中国科学院微电子研究所 | SOT-MRAM memory cell and preparation method thereof |
| WO2022095033A1 (en) * | 2020-11-09 | 2022-05-12 | 华为技术有限公司 | Spin orbit torque magnetic random access memory, manufacturing method therefor, and memory device |
| US20230255122A1 (en) * | 2022-02-10 | 2023-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory structure and formation method thereof |
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