CN113690367A - SOT-MRAM memory cell and preparation method thereof - Google Patents
SOT-MRAM memory cell and preparation method thereof Download PDFInfo
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- 230000015654 memory Effects 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 230000005291 magnetic effect Effects 0.000 claims abstract description 78
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 57
- 230000005415 magnetization Effects 0.000 claims abstract description 41
- 230000008878 coupling Effects 0.000 claims abstract description 40
- 238000010168 coupling process Methods 0.000 claims abstract description 40
- 238000005859 coupling reaction Methods 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 191
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 33
- 239000011241 protective layer Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 229910001385 heavy metal Inorganic materials 0.000 claims description 9
- 229910002546 FeCo Inorganic materials 0.000 claims description 7
- 229910019041 PtMn Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention provides an SOT-MRAM memory cell and a preparation method thereof, wherein the SOT-MRAM memory cell comprises: the magnetic tunnel junction comprises a free layer, a barrier layer and a reference layer which are sequentially stacked from bottom to top, wherein the free layer is provided with vertical magnetization with a variable direction, and the reference layer is provided with vertical magnetization with a fixed direction; the spin orbit coupling layer is positioned below the magnetic tunnel junction and is in contact with the free layer, and the spin orbit coupling layer is used for generating spin orbit torque so as to enable the magnetization of the free layer to be reversed; and the first ferromagnetic layer and the second ferromagnetic layer are positioned above the spin-orbit torque coupling layer and positioned at two sides of the magnetic tunnel junction, and both the first ferromagnetic layer and the second ferromagnetic layer have in-plane horizontal magnetization, and the magnetization direction is parallel to the direction of a write current passing through the spin-orbit torque coupling layer so as to generate a horizontal magnetic field for the magnetic tunnel junction. The invention can realize the deterministic magnetization reversal of the free layer by using the spin orbit torque under the condition of no external magnetic field.
Description
Technical Field
The invention relates to the technical field of MRAM memories, in particular to an SOT-MRAM memory unit and a preparation method thereof.
Background
With the rapid development of spintronics, the Spin-Orbit Coupling (SOC) is receiving more and more attention, mainly including the Spin hall effect and the interface Edelstein effect and the inverse effect thereof, and the voltage-controllable current and Spin current can be mutually converted. Spin-Orbit Torque (SOT) is based on the SOC effect, and utilizes the Spin current induced by charge flow to generate Spin transfer Torque, thereby achieving the purpose of regulating and controlling the magnetic storage unit. Because the read-write path is divided, the magnetic memory has the excellent performances of low energy consumption, high write-in speed, strong magnetic moment overturning property, high efficiency, high stability and the like, and shows huge prospects in the fields of magnetic memory devices and the like.
The spin orbit rectangular magnetic random access memory (SOT-MRAM) uses SOT generated by spin current as an information writing mode, not only maintains the excellent characteristics of the MRAM such as high speed, low power consumption and the like, but also realizes the separation of a reading and writing path, and is more beneficial to improving the performances of breakdown resistance, long service life and the like of a device.
At present, for the SOT-MRAM which adopts a magnetic tunnel junction with excellent performance and perpendicular magnetic anisotropy as a basic storage unit, the independent spin orbit torque cannot realize the deterministic directional magnetization reversal, and generally can realize the deterministic magnetic moment reversal and information writing of a perpendicular free layer in the magnetic tunnel junction under the help of an external magnetic field in a specific direction. However, the introduction of the external magnetic field increases the complexity and reliability risk of the circuit, and is not favorable for the integration of the device. Therefore, how to enable the spin orbit torque to complete deterministic magnetization switching under the condition of no external magnetic field and realize the integrated application compatible with the existing CMOS process is still a technical problem to be solved in the field.
Disclosure of Invention
In order to solve the above problems, the present invention provides an SOT-MRAM memory cell capable of implementing a deterministic magnetization switching of a free layer using spin orbit torque without an external magnetic field.
In one aspect, the present invention provides an SOT-MRAM memory cell, comprising:
the magnetic tunnel junction comprises a free layer, a barrier layer and a reference layer which are sequentially stacked from bottom to top, wherein the free layer is provided with vertical magnetization with a variable direction, and the reference layer is provided with vertical magnetization with a fixed direction;
a spin orbit coupling layer located below the magnetic tunnel junction and contacting the free layer, the spin orbit coupling layer for generating spin orbit torque to switch the magnetization of the free layer;
a first ferromagnetic layer and a second ferromagnetic layer above the spin-orbit torque coupling layer and on either side of the magnetic tunnel junction, the first and second ferromagnetic layers each having an in-plane horizontal magnetization, the magnetization direction being parallel to a direction of a write current passing in the spin-orbit torque coupling layer to generate a horizontal magnetic field for the magnetic tunnel junction.
Optionally, the material of the first ferromagnetic layer and the second ferromagnetic layer is one of Fe, FeCo, and FeN.
Optionally, the spin orbit torque coupling layer is made of a heavy metal, a doped heavy metal, a heavy metal alloy, or a topological insulator.
Optionally, the method further comprises:
a first antiferromagnetic layer located above the first ferromagnetic layer for pinning a magnetization direction of the first ferromagnetic layer;
a second antiferromagnetic layer located above the second ferromagnetic layer for pinning a magnetization direction of the second ferromagnetic layer.
Optionally, the material of the first and second antiferromagnetic layers is IrMn or PtMn.
Optionally, the method further comprises:
a first protective layer over the first antiferromagnetic layer;
a second protective layer over the second antiferromagnetic layer.
Optionally, the material of the first protective layer and the second protective layer is Ta or Ru.
Optionally, the method further comprises: and the insulating medium layer surrounds the peripheral side wall and the top of the magnetic tunnel junction and covers the surface of the spin orbit coupling layer.
In another aspect, the present invention provides a method for manufacturing an SOT-MRAM memory cell, comprising:
providing a substrate;
depositing a spin-orbit coupling layer on the substrate;
forming a magnetic tunnel junction on the spin-orbit torque coupling layer, wherein the magnetic tunnel junction comprises a free layer, a barrier layer and a reference layer which are sequentially stacked from bottom to top, the free layer has vertical magnetization with a variable direction, and the reference layer has vertical magnetization with a fixed direction;
sequentially and conformally depositing an insulating medium layer, a ferromagnetic layer, an anti-ferromagnetic layer and a protective layer on the surface of the spin-orbit torque coupling layer and the surface of the magnetic tunnel junction;
photoetching and etching are respectively carried out on two sides of the magnetic tunnel junction so as to respectively form laminated structures which sequentially comprise a ferromagnetic layer/an anti-ferromagnetic layer/a protective layer from bottom to top on the two sides of the magnetic tunnel junction;
and carrying out magnetic field annealing under a vacuum condition, so that the magnetization directions of the ferromagnetic layers on two sides of the magnetic tunnel junction are horizontal directions and are parallel to the direction of the write current passing through the spin-orbit torque coupling layer.
Optionally, the material of the ferromagnetic layer is one of Fe, FeCo, and FeN;
the material of the antiferromagnetic layer is IrMn or PtMn;
the protective layer is made of Ta or Ru.
The SOT-MRAM storage unit provided by the invention is characterized in that ferromagnetic layers are respectively arranged on two sides of a magnetic tunnel junction, and the magnetization directions of the ferromagnetic layers on the two sides are parallel to the direction of a write current flowing in a spin orbit coupling layer, so that the ferromagnetic layers on the two sides generate a horizontal magnetic field parallel to the direction of the write current for the magnetic tunnel junction, and the positive and negative directions of the write current can realize the up-and-down directional overturning of the magnetic moment of a free layer.
Drawings
FIG. 1 is a schematic structural diagram of an SOT-MRAM memory cell according to an embodiment of the invention;
fig. 2 to 5 are schematic cross-sectional structures of steps of a method for fabricating an SOT-MRAM memory cell according to an embodiment of the invention.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, but it should be understood that the descriptions are only illustrative and are not intended to limit the scope of the present disclosure. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
FIG. 1 is a perspective view of an SOT-MRAM memory cell according to an embodiment of the invention. As shown in FIG. 1, the SOT-MRAM memory cell includes a magnetic tunnel junction 101, a spin-orbit coupling layer 102, and first 1041 and second 1042 ferromagnetic layers on either side of the magnetic tunnel junction 101. Specifically, the magnetic tunnel junction 101 includes a most basic sandwich structure, that is, a free layer, a barrier layer, and a reference layer (not shown in the figure) stacked in this order from bottom to top, wherein the free layer has a vertical magnetization with a variable direction, and the reference layer has a vertical magnetization with a fixed direction. The spin orbit coupling layer 102 is located below the magnetic tunnel junction 101 in contact with the free layer of the magnetic tunnel junction 101, and the spin orbit coupling layer 102 serves to generate spin orbit torque using the spin hall effect to flip the magnetization of the free layer. The first ferromagnetic layer 1041 and the second ferromagnetic layer 1042 are located above the spin-orbit torque coupling layer 102 and respectively located at two sides of the magnetic tunnel junction 101, and both of the ferromagnetic layers have in-plane horizontal magnetization parallel to a direction of a write current passing through the spin-orbit torque coupling layer 102 when writing data, so as to generate a horizontal magnetic field to the magnetic tunnel junction 101.
Alternatively, referring to fig. 1, as an embodiment, the SOT-MRAM memory cell may further include a first antiferromagnetic layer 1051 and a second antiferromagnetic layer 1052, the first antiferromagnetic layer 1051 being located above the first ferromagnetic layer 1041 for pinning the magnetization direction of the first ferromagnetic layer 1041, and the second antiferromagnetic layer 1052 being located above the second ferromagnetic layer 1042 for pinning the magnetization direction of the second ferromagnetic layer 1042.
Further, a first protection layer 1061 may be further disposed above the first antiferromagnetic layer 1051 for preventing the first antiferromagnetic layer 1051 from being oxidized. Similarly, a second protection layer 1062 may be further disposed above the second antiferromagnetic layer 1052 for preventing the second antiferromagnetic layer 1052 from being oxidized.
In the above embodiments, the free layer and the reference layer of the magnetic tunnel junction 101 use ferromagnetic materials, such as Fe, FeCo, FeCoB. The barrier layer is more commonly MgO. The spin orbit torque coupling layer 102 is made of heavy metal, doped heavy metal, heavy metal alloy or topological insulator. The material of the first ferromagnetic layer 1041 and the second ferromagnetic layer 1042 is one of Fe, FeCo, and FeN. The material of the first antiferromagnetic layer 1051 and the second antiferromagnetic layer 1052 is IrMn or PtMn. The material of the first protective layer 1061 and the second protective layer 1062 is Ta or Ru.
In addition, in consideration of the device manufacturing process, there may be an insulating dielectric layer (not shown) surrounding the sidewalls and the top of the magnetic tunnel junction 101 and covering the surface of the spin-orbit coupling layer 102.
The SOT-MRAM storage unit provided by the invention is characterized in that ferromagnetic layers are respectively arranged on two sides of a magnetic tunnel junction, and the magnetization directions of the ferromagnetic layers on the two sides are fixedly parallel to the direction of a write current flowing in a spin orbit coupling layer, so that the ferromagnetic layers on the two sides generate a horizontal magnetic field parallel to the direction of the write current for the magnetic tunnel junction, and the positive and negative directions of the write current can realize the up-and-down directional overturning of the magnetic moment of a free layer.
For the SOT-MRAM memory cell provided in the above embodiments, the embodiments of the present invention further provide a method for manufacturing the SOT-MRAM memory cell, and fig. 2 to 5 are cross-sectional structural views of steps in the manufacturing process.
As shown in fig. 2, a substrate 201 is provided, and a spin-orbit coupling layer 202 is deposited on the substrate 201. Ta, Pt and the like can be grown by utilizing a film growth process such as PVD and the like to obtain the spin-orbit coupling layer. And then growing films of each layer of the magnetic tunnel junction on the spin-orbit torque coupling layer 202, and processing the films of each layer of the magnetic tunnel junction into the magnetic tunnel junction 203 by utilizing photoetching and etching, wherein the magnetic tunnel junction 203 is generally cylindrical, the magnetic tunnel junction 203 at least comprises a free layer, a barrier layer and a reference layer which are sequentially stacked from bottom to top, the free layer has vertical magnetization with changeable direction, and the reference layer has vertical magnetization with fixed direction.
As shown in fig. 3, an insulating dielectric layer 204, which may be SiN, is conformally formed on the exposed surface of the spin-orbit torque coupling layer 202 and the surface of the magnetic tunnel junction 203, and the insulating dielectric layer 204 is used to protect the magnetic tunnel junction 203.
Next, referring to fig. 4, a ferromagnetic layer 205, an antiferromagnetic layer 206 and a protection layer 207 with high magnetization are sequentially deposited on the insulating dielectric layer 204, wherein the ferromagnetic layer 205 may be one of Fe, FeCo and FeN, the antiferromagnetic layer 206 may be IrMn or PtMn, and the protection layer 207 may be Ta or Ru.
Then, as shown in fig. 5, photolithography and etching are performed on both sides of the magnetic tunnel junction 203, respectively, to form a laminated structure including a ferromagnetic layer/an antiferromagnetic layer/a protective layer in this order from bottom to top on both sides of the magnetic tunnel junction 203, respectively. In fig. 5, the ferromagnetic layer 2051/antiferromagnetic layer 2061/protective layer 2071 constitute a stacked structure, and the ferromagnetic layer 2052/antiferromagnetic layer 2062/protective layer 2072 constitute a stacked structure. It will be appreciated that the two stacked structures may be obtained by suitable exposure patterns.
Finally, magnetic field annealing is performed under a vacuum condition, so that the magnetization directions of the ferromagnetic layer 2051 and the ferromagnetic layer 2052 are horizontal directions and parallel to the direction of a write current passing through the spin-orbit torque coupling layer during data writing, and an external horizontal magnetic field is formed for the magnetic tunnel junction. Specifically, ferromagnetic layer 2051 is pinned in a horizontal direction by antiferromagnetic layer 2061, ferromagnetic layer 2052 is pinned in a horizontal direction by antiferromagnetic layer 2062, and ferromagnetic layer 2051 and ferromagnetic layer 2052 together form a horizontal magnetic field for the magnetic tunnel junction, so that the spin-orbit torque generated when positive and negative currents are written in the spin-orbit coupling layer can directionally flip the free layer magnetic moment.
In addition, SiO may be redeposited2And the insulating medium protects the formed device structure.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. An SOT-MRAM memory cell, comprising:
the magnetic tunnel junction comprises a free layer, a barrier layer and a reference layer which are sequentially stacked from bottom to top, wherein the free layer is provided with vertical magnetization with a variable direction, and the reference layer is provided with vertical magnetization with a fixed direction;
a spin orbit coupling layer located below the magnetic tunnel junction and contacting the free layer, the spin orbit coupling layer for generating spin orbit torque to switch the magnetization of the free layer;
a first ferromagnetic layer and a second ferromagnetic layer above the spin-orbit torque coupling layer and on either side of the magnetic tunnel junction, the first and second ferromagnetic layers each having an in-plane horizontal magnetization, the magnetization direction being parallel to a direction of a write current passing in the spin-orbit torque coupling layer to generate a horizontal magnetic field for the magnetic tunnel junction.
2. The SOT-MRAM memory cell of claim 1, wherein the material of the first ferromagnetic layer and the second ferromagnetic layer is one of Fe, FeCo, and FeN.
3. The SOT-MRAM memory cell of claim 1, wherein the spin-orbit torque coupling layer is a heavy metal, a doped heavy metal, a heavy metal alloy, or a topological insulator.
4. The SOT-MRAM memory cell of claim 1, further comprising:
a first antiferromagnetic layer located above the first ferromagnetic layer for pinning a magnetization direction of the first ferromagnetic layer;
a second antiferromagnetic layer located above the second ferromagnetic layer for pinning a magnetization direction of the second ferromagnetic layer.
5. The SOT-MRAM memory cell of claim 4, wherein the material of the first and second antiferromagnetic layers is IrMn or PtMn.
6. The SOT-MRAM memory cell of claim 4, further comprising:
a first protective layer over the first antiferromagnetic layer;
a second protective layer over the second antiferromagnetic layer.
7. The SOT-MRAM memory cell of claim 6, wherein the material of the first and second protective layers is Ta or Ru.
8. The SOT-MRAM memory cell of claim 1, further comprising: and the insulating medium layer surrounds the peripheral side wall and the top of the magnetic tunnel junction and covers the surface of the spin orbit coupling layer.
9. A method for fabricating an SOT-MRAM memory cell, comprising:
providing a substrate;
depositing a spin-orbit coupling layer on the substrate;
forming a magnetic tunnel junction on the spin-orbit torque coupling layer, wherein the magnetic tunnel junction comprises a free layer, a barrier layer and a reference layer which are sequentially stacked from bottom to top, the free layer has vertical magnetization with a variable direction, and the reference layer has vertical magnetization with a fixed direction;
sequentially and conformally depositing an insulating medium layer, a ferromagnetic layer, an anti-ferromagnetic layer and a protective layer on the surface of the spin-orbit torque coupling layer and the surface of the magnetic tunnel junction;
photoetching and etching are respectively carried out on two sides of the magnetic tunnel junction so as to respectively form laminated structures which sequentially comprise a ferromagnetic layer/an anti-ferromagnetic layer/a protective layer from bottom to top on the two sides of the magnetic tunnel junction;
and carrying out magnetic field annealing under a vacuum condition, so that the magnetization directions of the ferromagnetic layers on two sides of the magnetic tunnel junction are horizontal directions and are parallel to the direction of the write current passing through the spin-orbit torque coupling layer.
10. The method of claim 9, wherein the material of the ferromagnetic layer is one of Fe, FeCo, and FeN;
the material of the antiferromagnetic layer is IrMn or PtMn;
the protective layer is made of Ta or Ru.
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