CN111864060B - Spin orbit torque based memory cell - Google Patents
Spin orbit torque based memory cell Download PDFInfo
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- CN111864060B CN111864060B CN202010749395.0A CN202010749395A CN111864060B CN 111864060 B CN111864060 B CN 111864060B CN 202010749395 A CN202010749395 A CN 202010749395A CN 111864060 B CN111864060 B CN 111864060B
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- H—ELECTRICITY
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
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Abstract
The invention provides a spin orbit torque based memory unit, comprising: the magnetic tunnel junction comprises a synthesized spin orbit torque effect layer and two magnetic tunnel junctions, wherein the synthesized spin orbit torque effect layer comprises a first spin orbit torque effect layer and a second spin orbit torque effect layer, the second spin orbit torque effect layer is positioned above the first spin orbit torque effect layer, the second spin orbit torque effect layer comprises two regions with different thicknesses, the spin Hall angle of the second spin orbit torque effect layer is opposite to the spin Hall angle of the first spin orbit torque effect layer in positive and negative, and when current is introduced into the synthesized spin orbit torque effect layer, the directions of total spin Hall angles generated in the two regions of the second spin orbit torque effect layer are opposite; the two magnetic tunnel junctions respectively comprise a free layer, a barrier layer and a reference layer which are stacked from bottom to top, and the free layers of the two magnetic tunnel junctions are respectively in contact with the surface of one of the two regions. The memory cell provided by the invention can realize differential storage.
Description
Technical Field
The invention relates to the technical field of magnetic memories, in particular to a storage unit based on spin orbit torque.
Background
The Spin-Orbit Torque Magnetic Random Access (SOT-MRAM) is a novel Memory, has the advantages of nanosecond-level read-write speed, low power consumption, nearly unlimited service life, non-volatility and the like, and has great application potential.
FIG. 1 shows a typical structure of an SOT-MRAM cell, the core of which is a Magnetic Tunnel Junction (MTJ) and a spin-orbit torque effect layer, as shown in FIG. 1. The MTJ includes a free layer, a barrier layer, and a reference layer. The magnetization direction of the reference layer is fixed, and the magnetization direction of the free layer can be changed. When the free layer and the reference layer are parallel, the magnetic tunnel junction is in a low resistance state (0); when the free layer and the reference layer are antiparallel, the magnetic tunnel junction is in the high resistance state (1).
However, in actual use, the inventors found that: the error rate of a single SOT-MRAM cell is high, and therefore, how to improve the reliability of data and the reading speed of data becomes a technical problem to be solved.
Disclosure of Invention
In order to solve the above problems, the present invention provides a spin orbit torque-based memory cell, which can implement differential storage, improve the reliability of data, and increase the reading speed of data.
In a first aspect, the present invention provides a spin-orbit-torque-based memory cell, comprising:
the synthetic spin orbit torque effect layer comprises a first spin orbit torque effect layer and a second spin orbit torque effect layer, the second spin orbit torque effect layer is positioned above the first spin orbit torque effect layer and comprises two regions with different thicknesses, the spin Hall angle of the second spin orbit torque effect layer is opposite to the spin Hall angle of the first spin orbit torque effect layer in positive and negative, and when current is introduced into the synthetic spin orbit torque effect layer, the directions of the total spin Hall angles generated in the two regions are opposite;
the magnetic tunnel junction comprises two magnetic tunnel junctions, wherein each magnetic tunnel junction comprises a free layer, a barrier layer and a reference layer which are stacked from bottom to top, and the free layers of the two magnetic tunnel junctions are respectively in contact with the surface of one of the two regions.
Optionally, if the first spin orbit torque effect layer is made of a material with a positive spin hall angle, the second spin orbit torque effect layer is made of a material with a negative spin hall angle;
and if the first spin orbit torque effect layer is made of a material with a negative spin Hall angle, the second spin orbit torque effect layer is made of a material with a positive spin Hall angle.
Optionally, the first spin orbit torque effect layer is made of Pt and has a thickness of 1 to 10nm, the second spin orbit torque effect layer is made of W, a thicker region is 1 to 3nm, and a thinner region is 0 to 0.9nm.
Optionally, the first spin orbit torque effect layer is made of Ta and has a thickness of 1-10nm, and the second spin orbit torque effect layer is made of Ir, wherein the thickness of the thicker region is 0.8-2nm, and the thickness of the thinner region is 0-0.7nm.
Optionally, the magnetization directions of the free layer and the reference layer of the magnetic tunnel junction are perpendicular to the film surface.
Optionally, the storage unit further includes:
the out-of-junction magnetic bias layer is positioned below the first spin orbit torque effect layer, and the magnetization direction of the out-of-junction magnetic bias layer is parallel to the surface of the film;
and the insulating layer is positioned between the junction external magnetic bias layer and the first spin orbit torque effect layer.
Optionally, the magnetic tunnel junction further comprises:
an in-junction magnetic biasing layer located above the reference layer, the magnetization direction of the in-junction magnetic biasing layer being parallel to the thin film surface.
Optionally, magnetization directions of the free layer and the reference layer of the magnetic tunnel junction are parallel to the surface of the thin film, and an included angle θ is formed between the magnetization direction and a current direction in the synthetic spin-orbit torque effect layer, where θ is greater than 0 and less than or equal to 90 °.
Optionally, the magnetic tunnel junction further comprises:
a pinning layer for realizing pinning of the magnetization direction of the reference layer;
a coupling layer between the reference layer and the pinned layer.
In a second aspect, the invention provides a memory, comprising the above-mentioned spin-orbit-torque-based memory unit.
The invention provides a spin orbit torque-based storage unit, which provides a synthetic spin orbit torque effect layer, comprising a first spin orbit torque effect layer and a second spin orbit torque effect layer, wherein the second spin orbit torque effect layer is positioned above the first spin orbit torque effect layer, the second spin orbit torque effect layer comprises two regions with different thicknesses, the spin Hall angle of the second spin orbit torque effect layer is opposite to the spin Hall angle of the first spin orbit torque effect layer in positive and negative, and when current is introduced into the synthetic spin orbit torque effect layer, the overall spin Hall angle directions generated in the two regions of the second spin orbit torque effect layer are opposite. The surfaces of the two regions are respectively provided with a magnetic tunnel junction, and the free layers of the two magnetic tunnel junctions are overturned towards opposite directions under the action of spin orbit moments in opposite directions, so that differential storage is realized.
Drawings
FIG. 1 is a schematic diagram of a conventional spin-orbit-torque magnetic memory cell;
FIG. 2 is a schematic structural diagram of a spin-orbit torque-based memory unit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a spin-orbit torque based memory cell according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a spin-orbit torque-based memory unit according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a spin-orbit torque based memory cell according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a read/write circuit of a spin-orbit torque-based memory unit according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that these descriptions are illustrative only and are not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
An embodiment of the present invention provides a spin orbit torque based memory unit, including: a synthetic spin-orbit torque effect layer and two magnetic tunnel junctions, wherein,
the synthetic spin orbit torque effect layer comprises a first spin orbit torque effect layer and a second spin orbit torque effect layer, the second spin orbit torque effect layer is positioned above the first spin orbit torque effect layer, the second spin orbit torque effect layer comprises two regions with different thicknesses, the spin Hall angle of the second spin orbit torque effect layer is opposite to the spin Hall angle of the first spin orbit torque effect layer in positive and negative, and when current is introduced into the synthetic spin orbit torque effect layer, the directions of the overall spin Hall angles generated by the two regions of the second spin orbit torque effect layer are opposite;
the two magnetic tunnel junctions respectively comprise a free layer, a barrier layer and a reference layer which are stacked from bottom to top, and the free layers of the two magnetic tunnel junctions are respectively in contact with the surface of one of the two regions.
Fig. 2 is a schematic structural diagram of a spin-orbit torque-based memory unit according to an embodiment of the present invention, and as shown in fig. 2, the memory unit 20 includes a first spin-orbit torque effect layer 201, a second spin-orbit torque effect layer 202, a first magnetic tunnel junction 203, and a second magnetic tunnel junction 204, where the second spin-orbit torque effect layer 202 includes two regions with different thicknesses, the first magnetic tunnel junction 203 is located on a surface of a thinner region, and the second magnetic tunnel junction 204 is located on a surface of a thicker region.
Each layer of the two-layer spinning Hall effect layer composite structure comprises but is not limited to a heavy metal, a topological insulating material, an alloy and other multilayer structures, and only the positive and negative of the spinning Hall angle of the two spinning Hall effect layers are opposite. If the first spin orbit torque effect layer 201 is made of a material with a positive spin hall angle, the second spin orbit torque effect layer 202 is made of a material with a negative spin hall angle; if the first spin orbit torque effect layer 201 is made of a material having a negative spin hall angle, the second spin orbit torque effect layer 202 is made of a material having a positive spin hall angle. More commonly used materials with positive spin Hall angles include, but are not limited to, pt, pd, ir, au, bi 2 Se 3 And alloys of these materials. More commonly used materials with negative spin hall angles include, but are not limited to, ta, W, mo, and alloys of these materials. The thicknesses of the two regions of the second spin orbit torque effect layer 202 need to be set according to specific material characteristics, so long as it is ensured that when current is introduced into the synthesized spin orbit torque effect layer, the directions of the total spin hall angles generated in the two regions of the second spin orbit torque effect layer are opposite, so that the free layers of the two magnetic tunnel junctions are driven to be turned in opposite directions, and thus, differential storage is realized.
In one embodiment, the first spin orbit torque effect layer 201 is made of Pt (positive spin hall angle) and has a thickness of 1 to 10nm, and the second spin orbit torque effect layer 202 is made of W (negative spin hall angle), wherein the thicker region has a thickness of 1 to 3nm and the thinner region has a thickness of 0 to 0.9nm.
In one embodiment, the first spin orbit torque effect layer 201 is made of Ta (negative spin hall angle) and has a thickness of 1 to 10nm, and the second spin orbit torque effect layer 202 is made of Ir (positive spin hall angle), wherein the thicker region has a thickness of 0.8 to 2nm and the thinner region has a thickness of 0 to 0.7nm.
In the embodiment of the present invention, the shapes of the two magnetic tunnel junctions are not particularly limited, and may be circular, oval, square, rhombusOne of a shape and a rectangle, and the sizes can be the same or different. The lamination structure of the two magnetic tunnel junctions is also not particularly limited, and it is general to keep the two magnetic tunnel junctions to have the same lamination structure. For example, the magnetic tunnel junction includes a free layer, a barrier layer, and a reference layer stacked in this order from bottom to top. The free layer is in contact with the second spin orbit torque effect layer. The materials of the free layer and the reference layer include, but are not limited to, magnetic materials such as Co, coFe, coFeB and the like, or synthetic magnetic materials such as Co/Mo/CoFeB, coFe/Mo/CoFeB and the like formed by ferromagnetic or antiferromagnetic coupling. Materials of the barrier layer include but are not limited to MgO, mgAl 2 O 4 And the like. A coupling layer and a pinning layer may be disposed on the reference layer for stabilizing the magnetization direction of the reference layer. The material of the coupling layer includes, but is not limited to, ru, mo, etc. Materials for the pinning layer include, but are not limited to [ Co/Pt ]]n、[Co/Pd]n、[CoFe/Pt]n, and the like. In the following description and the related figures, only the free layer, barrier layer, and reference layer of the magnetic tunnel junction are described.
For a magnetic tunnel junction, the free layer and the reference layer may have different magnetization directions. As shown in FIG. 2, the magnetization directions of the free layer and the reference layer of the magnetic tunnel junction are perpendicular to the film surface, and when writing to the memory cell 20, it is necessary to pass a current in the horizontal direction in the resultant spin-orbit torque effect layer, and also apply an external magnetic field to flip the magnetic moment of the free layer. In order to realize magnetic moment reversal without an external magnetic field, as an embodiment, a memory cell shown in fig. 3 is formed by modifying the memory cell shown in fig. 2. As shown in fig. 3, an external magnetic bias layer 205 is disposed below the first spin orbit torque effect layer 201, and the magnetization direction of the external magnetic bias layer 205 is parallel to the surface of the thin film (i.e. in-plane magnetization) for generating a bias magnetic field. An insulating layer 206 is arranged between the junction magnetic bias layer 205 and the first spin orbit torque effect layer 201, and plays a role of isolation. The material of the out-coupling magnetic bias layer 205 is NiFe or CoFe, and the material of the insulating layer 206 is SiO 2 As shown in FIG. 3, the insulating layer 206 surrounds the extrinsic magnetic bias layer 205, which is an intrinsic magnetic biasThe stray field generated by layer 205 corresponds to an external magnetic field. As another embodiment, as shown in FIG. 4, a modification is made on the basis of FIG. 2, an internal magnetic bias layer is respectively arranged above the reference layer of each magnetic tunnel junction, the magnetization direction of the internal magnetic bias layer in the junction is parallel to the surface of the thin film, and the structure can also realize the magnetic moment reversal of the free layer without an external magnetic field.
As another embodiment, the memory cell of the present invention has a magnetic tunnel junction in which the magnetization directions of the free layer and the reference layer are parallel to the surface of the thin film and the magnetization direction forms an angle θ,0 with the direction of current in the resultant spin-orbit torque effect layer<Theta is less than or equal to 90 degrees. When θ =90 °, the structure of the memory cell is as shown in fig. 5,
indicating that the magnetization direction is perpendicular to the paper surface, going inward, and indicating that the magnetization direction is perpendicular to the paper surface, going outward. When the memory unit is written, the magnetic moment of the free layer can be turned over only by introducing current in the horizontal direction into the synthesized spin orbit moment effect layer without applying an external magnetic field. Therefore, the problem of the magnetic bias layer is not considered.
With any of the memory cells in the above embodiments, since the overall spin hall angle directions generated when a current is applied to the resultant spin-orbit torque effect layer by the two regions having different thicknesses of the second spin-orbit torque effect layer are opposite, the resistance values of the two magnetic tunnel junctions are always opposite regardless of whether a current is applied in the forward direction or the reverse direction, thereby implementing differential memory.
FIG. 6 shows a read/write circuit for a memory cell, during a write operation: WL power-on gating transistor, BLW power-on, SL grounding; during the reading operation: WL is powered on to gate the transistor, SL is powered on, and SA reads data.
In the above description, details of the techniques such as patterning and etching of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (10)
1. A spin-orbit torque-based memory unit, comprising:
the synthetic spin orbit torque effect layer comprises a first spin orbit torque effect layer and a second spin orbit torque effect layer which are stacked up and down, the second spin orbit torque effect layer is positioned above the first spin orbit torque effect layer and comprises two regions with different thicknesses, the spin Hall angle of the second spin orbit torque effect layer is opposite to the spin Hall angle of the first spin orbit torque effect layer in positive and negative, and when current is introduced into the synthetic spin orbit torque effect layer, the directions of the total spin Hall angles generated in the two regions are opposite;
the magnetic tunnel junction structure comprises two magnetic tunnel junctions, wherein each magnetic tunnel junction comprises a free layer, a barrier layer and a reference layer which are arranged in a stacked mode from bottom to top, and the free layers of the two magnetic tunnel junctions are in contact with the surface of one of the two regions respectively.
2. The memory cell of claim 1,
if the first spin orbit torque effect layer is made of a material with a positive spin Hall angle, the second spin orbit torque effect layer is made of a material with a negative spin Hall angle;
and if the first spin orbit torque effect layer is made of a material with a negative spin Hall angle, the second spin orbit torque effect layer is made of a material with a positive spin Hall angle.
3. The memory cell according to claim 1, wherein the first spin orbit torque effect layer is made of Pt and has a thickness of 1 to 10nm, and the second spin orbit torque effect layer is made of W, and wherein the thicker region has a thickness of 1 to 3nm and the thinner region has a thickness of 0 to 0.9nm.
4. The memory cell of claim 1, wherein the first spin-orbit torque effect layer is Ta and has a thickness of 1-10nm, and the second spin-orbit torque effect layer is Ir, wherein the thicker region has a thickness of 0.8-2nm and the thinner region has a thickness of 0-0.7nm.
5. The memory cell of claim 1,
the magnetization directions of the free layer and the reference layer of the magnetic tunnel junction are perpendicular to the surface of the thin film.
6. The memory cell of claim 5, further comprising:
the out-of-junction magnetic bias layer is positioned below the first spin orbit torque effect layer, and the magnetization direction of the out-of-junction magnetic bias layer is parallel to the surface of the film;
and the insulating layer is positioned between the junction external magnetic bias layer and the first spin orbit torque effect layer.
7. The memory cell of claim 5, wherein the magnetic tunnel junction further comprises:
and the magnetic biasing layer in the junction is positioned above the reference layer, and the magnetization direction of the magnetic biasing layer in the junction is parallel to the surface of the thin film.
8. The memory cell of claim 1,
the magnetization directions of the free layer and the reference layer of the magnetic tunnel junction are parallel to the surface of the film, and the magnetization direction and the current direction in the synthetic spin-orbit torque effect layer form an included angle theta, wherein theta is greater than 0 and less than or equal to 90 degrees.
9. The memory cell of claim 5 or 8, wherein the magnetic tunnel junction further comprises:
a pinning layer for realizing pinning of the magnetization direction of the reference layer;
a coupling layer between the reference layer and the pinned layer.
10. A memory comprising a spin-orbit-torque-based memory cell according to any one of claims 1 to 9.
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| CN202010749395.0A CN111864060B (en) | 2020-07-30 | 2020-07-30 | Spin orbit torque based memory cell |
| PCT/CN2020/140878 WO2022021790A1 (en) | 2020-07-30 | 2020-12-29 | Storage unit based on spin-orbit torque |
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| CN111864060B (en) * | 2020-07-30 | 2023-02-28 | 浙江驰拓科技有限公司 | Spin orbit torque based memory cell |
| CN113555498B (en) * | 2021-07-23 | 2023-10-03 | 致真存储(北京)科技有限公司 | Magnetic random access memory, preparation method and control method thereof |
| CN115691596A (en) * | 2021-07-27 | 2023-02-03 | 浙江驰拓科技有限公司 | Magnetic memory cell and magnetic memory |
| CN113690366A (en) * | 2021-08-17 | 2021-11-23 | 中国科学院微电子研究所 | SOT-MRAM memory cell and preparation method thereof |
| CN113690367A (en) * | 2021-08-17 | 2021-11-23 | 中国科学院微电子研究所 | SOT-MRAM memory cell and preparation method thereof |
| CN113707804B (en) * | 2021-08-27 | 2023-12-15 | 致真存储(北京)科技有限公司 | Spin orbit moment magnetic memory and preparation method thereof |
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| CN106876582A (en) * | 2017-02-21 | 2017-06-20 | 中国科学院物理研究所 | MTJ and magnetic device and electronic equipment including it |
| CN109891613A (en) * | 2016-10-21 | 2019-06-14 | 韩国科学技术院 | Semiconductor devices and semiconductive logic device |
| CN110197682A (en) * | 2018-02-27 | 2019-09-03 | 中电海康集团有限公司 | Storage unit, memory and method for writing data |
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| US20170330070A1 (en) * | 2016-02-28 | 2017-11-16 | Purdue Research Foundation | Spin orbit torque based electronic neuron |
| US10121961B2 (en) * | 2017-02-01 | 2018-11-06 | Samsung Electronics Co., Ltd. | Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque |
| CN110660420B (en) * | 2018-06-28 | 2022-06-24 | 中电海康集团有限公司 | MRAM memory cell |
| CN111370573B (en) * | 2018-12-26 | 2021-12-24 | 中电海康集团有限公司 | Magnetic memory cell and SOT-MRAM memory |
| CN111864060B (en) * | 2020-07-30 | 2023-02-28 | 浙江驰拓科技有限公司 | Spin orbit torque based memory cell |
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| CN109891613A (en) * | 2016-10-21 | 2019-06-14 | 韩国科学技术院 | Semiconductor devices and semiconductive logic device |
| CN106876582A (en) * | 2017-02-21 | 2017-06-20 | 中国科学院物理研究所 | MTJ and magnetic device and electronic equipment including it |
| CN110197682A (en) * | 2018-02-27 | 2019-09-03 | 中电海康集团有限公司 | Storage unit, memory and method for writing data |
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