WO2021201478A1 - Appareil de traitement de tranche et procédé de traitement d'une telle tranche - Google Patents

Appareil de traitement de tranche et procédé de traitement d'une telle tranche Download PDF

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Publication number
WO2021201478A1
WO2021201478A1 PCT/KR2021/003458 KR2021003458W WO2021201478A1 WO 2021201478 A1 WO2021201478 A1 WO 2021201478A1 KR 2021003458 W KR2021003458 W KR 2021003458W WO 2021201478 A1 WO2021201478 A1 WO 2021201478A1
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WO
WIPO (PCT)
Prior art keywords
wafer processing
measurement object
processing apparatus
horizontal support
sensor unit
Prior art date
Application number
PCT/KR2021/003458
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English (en)
Korean (ko)
Inventor
김영진
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주식회사 에프에스
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Publication of WO2021201478A1 publication Critical patent/WO2021201478A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/04—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness specially adapted for measuring length or width of objects while moving
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/04—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness specially adapted for measuring length or width of objects while moving
    • G01B7/042—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness specially adapted for measuring length or width of objects while moving for measuring length
    • G01B7/044—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness specially adapted for measuring length or width of objects while moving for measuring length using capacitive means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/22—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in capacitance

Definitions

  • the present invention relates to a wafer thin film deposition apparatus and a processing method thereof.
  • Various processes for semiconductor manufacturing such as deposition or etching are performed by disposing a wafer in a chamber isolated from the outside and then spraying a process gas suitable for each process onto the wafer through a showerhead.
  • a conventional wafer processing apparatus includes a chamber, a showerhead provided at an upper portion of the chamber to spray a reaction gas, a heater block provided at a lower portion of the chamber to seat a substrate, and an exhaust unit.
  • a substrate inlet is formed on one or both walls of the chamber, and the substrate is carried in and out by the transfer means through the substrate inlet.
  • the showerhead descends in the direction of the heat block and is disposed at a position having a preset distance.
  • a tolerance may occur, resulting in rework and cost in the process. The technology to make this possible is required.
  • An object of the present invention is to provide a wafer processing apparatus and a processing method thereof, which can fundamentally prevent cost in the process due to rework that may occur in the wafer processing process.
  • An embodiment of a wafer processing apparatus includes: a chamber having an internal space for wafer processing;
  • It may include; a plurality of displacement detection sensor units to which the inductance method is applied formed on the horizontal support.
  • the displacement sensor unit In one embodiment of the present invention, the displacement sensor unit,
  • a sensing unit for generating an inductance of the measurement object
  • a resonance driving unit for driving the sensor unit
  • a voltage amplifier for amplifying a voltage by controlling a current according to a distance between the measurement object and the horizontal support
  • a temperature sensor unit for measuring a temperature and compensating for a change in a signal according to the temperature
  • It may include; a frequency measuring unit for measuring the frequency change according to the distance.
  • a digital change unit for converting a digital value according to the distance; and a wireless communication unit communicating with an external server.
  • the displacement sensor unit may be controlled to adjust the current value based on the measured distance from the measurement object to the measurement object.
  • the wafer processing apparatus may further include a control unit to which a signal measured from the displacement sensor unit is input.
  • the displacement sensor unit may be a coil (coil) type.
  • three of the displacement detection sensor units may be radially arranged at the same angle with respect to the concentric circles of the measurement object.
  • the displacement sensing sensor unit may be disposed at different distances from each other based on concentric circles of the measurement object.
  • the displacement detection sensor unit may be embedded in the measurement object so that observation from the outside is impossible.
  • the displacement detection sensor unit may be a coil sensor having a fixed frequency value (F).
  • a metal plate may be formed on the outer peripheral surface of the horizontal support.
  • an electromagnetic wave EMI (electromagnetic interference, electromagnetic wave interference) absorbing member may be formed under the horizontal support.
  • the measurement object may be a non-metal material.
  • the horizontal support may be a susceptor.
  • an embodiment of the wafer processing apparatus a chamber in which an internal space for depositing a thin film on a measurement object is formed;
  • a plurality of displacement detection sensor units to which an inductance method formed on the horizontal support is applied including,
  • the displacement sensor unit The displacement sensor unit,
  • a sensor unit generating an inductance of the measurement object
  • a resonance driving unit for driving the sensor unit
  • a voltage amplifying unit for amplifying a voltage by controlling a current according to a distance between the measurement object and the measurement object;
  • a temperature sensor unit for measuring a temperature and compensating for a change in a signal according to the temperature
  • a frequency measuring unit for measuring a frequency change according to the distance
  • a digital conversion unit for converting a digital value according to the distance
  • It may include; a wireless communication unit that communicates with the external server.
  • the temperature sensor unit may directly transmit a measurement signal to the digital conversion unit.
  • the present invention provides a processing method using the wafer processing apparatus, as a wafer processing method in which processing by a measurement object is performed in an internal processing space in which a wafer seated on a horizontal support is drawn in and out,
  • the distance measurement value may be individually measured for each of the plurality of displacement detection sensor units.
  • the step of reflecting the drift (drift) according to the temperature change of the displacement sensing sensor unit is corrected (calibration); may further include.
  • the correction can be calculated by the following equation (1),
  • a wafer processing apparatus and a processing method thereof according to the present invention measure and correct a tolerance for a distance value according to a movement of a showerhead in a chamber for wafer processing in advance by configuring a plurality of sensor units to which an inductance method is applied, thereby performing a wafer processing process
  • FIG. 1 is a plan view of a horizontal support according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of a wafer processing apparatus according to an embodiment of the present invention
  • FIG. 3 is a block diagram of a displacement sensor according to an embodiment of the present invention.
  • FIG. 4 is a schematic usage state diagram of a displacement sensor unit according to an embodiment of the present invention.
  • FIG. 6 is a graph showing an example of voltage amplification according to the distance measurement of the displacement sensor unit according to an embodiment of the present invention.
  • FIG. 7 to 8 are flowcharts of a wafer processing method according to an embodiment of the present invention.
  • FIG. 1 is a plan view of a lower support of a wafer processing apparatus according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of a wafer processing apparatus according to an embodiment of the present invention
  • FIG. 3 A configuration diagram of a wafer processing apparatus according to an embodiment of the present invention is shown
  • FIG. 4 schematically shows a schematic usage state diagram of a displacement sensor unit according to an embodiment of the present invention.
  • the wafer processing apparatus 300 is provided with a showerhead 50 and three displacement detection sensors 120, 130, 140 elevating in the chamber (C). It may include a horizontal support (100).
  • the chamber C is formed as a closed space for the wafer to be processed, and a showerhead 50 may be disposed on the upper portion of the chamber C to be able to move up and down in the vertical direction.
  • a horizontal support 100 on which the wafer is mounted may be formed in a lower portion of the chamber C to correspond to the showerhead 50 .
  • the horizontal support 100 may be formed of a circular plate material, and the first displacement sensor 110 , the second displacement sensor 120 , and the third displacement sensor 130 are located inside the horizontal support 100 . can be reconsidered. Accordingly, it is possible to prevent deformation due to external contamination.
  • the horizontal support 100 includes a first region in which the first displacement sensor 110 , the second displacement sensor 120 , and the third displacement sensor 130 are cored and a metal surrounding the outer circumferential surface of the first region.
  • a plate 150 may be formed. The metal plate 150 may be protected from being deformed by an external force such as an external shock or rotational force.
  • an EMI (electromagnetic interference) absorber may be attached on the lower surface of the horizontal support 100.
  • the EMI absorbing member absorbs noise that may be generated from the lower side of the first displacement sensor 110 , the second displacement sensor 120 , and the third displacement sensor 130 cored on the horizontal support 100 . can be prevented
  • a first displacement sensor 110 , a second displacement sensor 120 , and a third displacement sensor 130 may be formed on the horizontal support 100 .
  • the first displacement detection sensor 110 , the second displacement detection sensor 120 , and the third displacement detection sensor 130 may be formed of a coil sensor. They are radially disposed with respect to the rotation center of the horizontal support 100 , and may be disposed at positions having the same angle with respect to the concentric circles of the horizontal support 100 .
  • the displacement detection sensors 120, 130, 140 are preferably three, but are not limited thereto, and for example, may be disposed at a location spaced apart from the center of the horizontal support 100 by a predetermined distance. .
  • the first displacement detection sensor 110 When the first displacement detection sensor 110 among the aforementioned displacement detection sensors 120, 130, and 140 is described as an example, the first displacement detection sensor 110 generates an inductance of the showerhead 50, respectively.
  • a frequency measuring unit 114 for measuring a change in frequency
  • a digital converting unit 115 for converting a digital value according to the distance
  • a wireless communication unit 116 for communicating with an external server (not shown)
  • a temperature measuring the temperature It may include a temperature sensor unit 117 for compensating for a change in the signal.
  • the displacement detection sensors 120 , 130 , and 140 may be controlled by the controller 200 .
  • the three displacement sensors 120, 130, and 140 generate a frequency when the showerhead 50 is positioned to measure a distance value according to the frequency, respectively. have.
  • FIG. 5 is a graph showing a change in frequency according to the distance measurement of the displacement sensor according to an embodiment of the present invention
  • FIG. 6 is a voltage amplification according to the distance measurement of the displacement sensor according to an embodiment of the present invention. Graphs showing examples are shown
  • FIGS. 7 to 8 are schematic flowcharts of a wafer processing method according to an embodiment of the present invention.
  • the control method of the wafer processing apparatus includes a showerhead descending step (S10), a distance value measurement step with the showerhead (S20), and an offset adjustment step according to a change in current and temperature according to the distance value (S30) may include Specifically, the control method is a step (S100) of the showerhead 50 descending in the chamber (C) of the wafer processing apparatus 300, the displacement detection sensors 110, 120, 130) by measuring the distance (S110), comparing the measured distance value with the preset value of the measured distance to determine whether a tolerance occurs (S120), the temperature measured by the temperature sensor unit 117 It may include a step (S130) of measuring and calibrating the presence or absence of a change and a step (S150) of loading the wafer (S).
  • the showerhead 50 located at the upper side in the chamber C of the wafer processing apparatus 300 may descend in the direction of the horizontal support 100 , which is a preset position ( S100 ).
  • the three displacement detection sensors 120, 130, and 140 located inside the horizontal support 100 can measure the distance values for each of the three points of the showerhead 50 facing each other ( S110).
  • an inductance having a predetermined numerical value may be generated from the inductance sensor 111 of the first displacement sensor 110 .
  • the resonance driver 112 may configure a resonance circuit to generate a frequency having a predetermined wavelength, and the frequency measurement unit 114 may measure a change in the frequency according to the distance.
  • the magnitude of the frequency may be changed in inverse proportion to the distance, as shown in FIG. 5 .
  • the frequency measured by the frequency measuring unit 114 may represent different wavelengths when the distance values of the three points of the showerhead 50 are measured differently. Through this, a distance value from the displacement sensor units 110 , 120 , and 130 to the shower head 50 , that is, the horizontality of the shower head 50 can be measured.
  • the voltage corresponding to the peak of the frequency wavelength is measured lower than the fixed voltage level as shown in FIG. 6, the voltage is amplified by controlling the current and measured higher than the fixed voltage level. In this case, it is possible to reduce the voltage and measure it with a measuring voltage line to perform precise measurement (S120).
  • the frequency may be measured differently. Accordingly, the voltage may be adjusted by controlling the current of the displacement detection sensor units 110 , 120 , and 130 through the control unit 200 according to the frequency measurement result value.
  • a process of adjusting an offset may be performed to compensate for a slight drift change in a signal measured by the temperature sensor unit 117 of the displacement sensor units 110 , 120 , 130 ( S140).
  • the wafer 50 is loaded onto the horizontal support 100 for processing such as etching and deposition of the wafer, so that the processing of the wafer can proceed.
  • processing such as etching and deposition of the wafer, so that the processing of the wafer can proceed.
  • S150 There is (S150).

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un appareil destiné au traitement d'une tranche et un procédé de traitement d'une telle tranche, l'appareil comprenant : une chambre ayant un espace interne destiné au dépôt d'un film mince sur un objet de mesure ; un support inférieur formé sur la chambre et sur lequel est logé l'objet de mesure ; une tête de projection fournissant du gaz à l'objet de mesure ; et une pluralité d'unités capteurs de détection de déplacement formées sur le support inférieur et auxquelles est appliqué un procédé d'inductance.
PCT/KR2021/003458 2020-03-31 2021-03-19 Appareil de traitement de tranche et procédé de traitement d'une telle tranche WO2021201478A1 (fr)

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Application Number Priority Date Filing Date Title
KR1020200039339A KR102444121B1 (ko) 2020-03-31 2020-03-31 웨이퍼 처리 장치 및 이의 처리방법
KR10-2020-0039339 2020-03-31

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WO2021201478A1 true WO2021201478A1 (fr) 2021-10-07

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010009141A1 (en) * 1997-03-24 2001-07-26 Hua-Shuang Kong Susceptor designs for silicon carbide thin films
JP2012112751A (ja) * 2010-11-24 2012-06-14 Mitsubishi Electric Corp 対象物の構成金属および対象物までの距離を検知するセンサおよび方法
KR20130001257A (ko) * 2010-06-10 2013-01-03 파나소닉 주식회사 포지션 센서
KR101275239B1 (ko) * 2011-04-11 2013-06-14 공은식 멤스 센서를 이용한 변위량 측정 시스템과 그 방법
KR20150094537A (ko) * 2014-02-11 2015-08-19 램 리써치 코포레이션 반도체 기판 프로세싱 장치의 샤워헤드 모듈을 위한 볼 스크루 샤워헤드 모듈 조절기 어셈블리

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100997104B1 (ko) 2008-07-04 2010-11-29 주식회사 테스 반도체 제조용 샤워헤드 및 이 샤워헤드를 구비한 반도체제조장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010009141A1 (en) * 1997-03-24 2001-07-26 Hua-Shuang Kong Susceptor designs for silicon carbide thin films
KR20130001257A (ko) * 2010-06-10 2013-01-03 파나소닉 주식회사 포지션 센서
JP2012112751A (ja) * 2010-11-24 2012-06-14 Mitsubishi Electric Corp 対象物の構成金属および対象物までの距離を検知するセンサおよび方法
KR101275239B1 (ko) * 2011-04-11 2013-06-14 공은식 멤스 센서를 이용한 변위량 측정 시스템과 그 방법
KR20150094537A (ko) * 2014-02-11 2015-08-19 램 리써치 코포레이션 반도체 기판 프로세싱 장치의 샤워헤드 모듈을 위한 볼 스크루 샤워헤드 모듈 조절기 어셈블리

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KR20210121906A (ko) 2021-10-08
KR102444121B1 (ko) 2022-09-19

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