WO2021201478A1 - Apparatus for processing wafer and method for processing same - Google Patents

Apparatus for processing wafer and method for processing same Download PDF

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Publication number
WO2021201478A1
WO2021201478A1 PCT/KR2021/003458 KR2021003458W WO2021201478A1 WO 2021201478 A1 WO2021201478 A1 WO 2021201478A1 KR 2021003458 W KR2021003458 W KR 2021003458W WO 2021201478 A1 WO2021201478 A1 WO 2021201478A1
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Prior art keywords
wafer processing
measurement object
processing apparatus
horizontal support
sensor unit
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PCT/KR2021/003458
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French (fr)
Korean (ko)
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김영진
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주식회사 에프에스
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Publication of WO2021201478A1 publication Critical patent/WO2021201478A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/04—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness specially adapted for measuring length or width of objects while moving
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/04—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness specially adapted for measuring length or width of objects while moving
    • G01B7/042—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness specially adapted for measuring length or width of objects while moving for measuring length
    • G01B7/044—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness specially adapted for measuring length or width of objects while moving for measuring length using capacitive means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/22—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in capacitance

Definitions

  • the present invention relates to a wafer thin film deposition apparatus and a processing method thereof.
  • Various processes for semiconductor manufacturing such as deposition or etching are performed by disposing a wafer in a chamber isolated from the outside and then spraying a process gas suitable for each process onto the wafer through a showerhead.
  • a conventional wafer processing apparatus includes a chamber, a showerhead provided at an upper portion of the chamber to spray a reaction gas, a heater block provided at a lower portion of the chamber to seat a substrate, and an exhaust unit.
  • a substrate inlet is formed on one or both walls of the chamber, and the substrate is carried in and out by the transfer means through the substrate inlet.
  • the showerhead descends in the direction of the heat block and is disposed at a position having a preset distance.
  • a tolerance may occur, resulting in rework and cost in the process. The technology to make this possible is required.
  • An object of the present invention is to provide a wafer processing apparatus and a processing method thereof, which can fundamentally prevent cost in the process due to rework that may occur in the wafer processing process.
  • An embodiment of a wafer processing apparatus includes: a chamber having an internal space for wafer processing;
  • It may include; a plurality of displacement detection sensor units to which the inductance method is applied formed on the horizontal support.
  • the displacement sensor unit In one embodiment of the present invention, the displacement sensor unit,
  • a sensing unit for generating an inductance of the measurement object
  • a resonance driving unit for driving the sensor unit
  • a voltage amplifier for amplifying a voltage by controlling a current according to a distance between the measurement object and the horizontal support
  • a temperature sensor unit for measuring a temperature and compensating for a change in a signal according to the temperature
  • It may include; a frequency measuring unit for measuring the frequency change according to the distance.
  • a digital change unit for converting a digital value according to the distance; and a wireless communication unit communicating with an external server.
  • the displacement sensor unit may be controlled to adjust the current value based on the measured distance from the measurement object to the measurement object.
  • the wafer processing apparatus may further include a control unit to which a signal measured from the displacement sensor unit is input.
  • the displacement sensor unit may be a coil (coil) type.
  • three of the displacement detection sensor units may be radially arranged at the same angle with respect to the concentric circles of the measurement object.
  • the displacement sensing sensor unit may be disposed at different distances from each other based on concentric circles of the measurement object.
  • the displacement detection sensor unit may be embedded in the measurement object so that observation from the outside is impossible.
  • the displacement detection sensor unit may be a coil sensor having a fixed frequency value (F).
  • a metal plate may be formed on the outer peripheral surface of the horizontal support.
  • an electromagnetic wave EMI (electromagnetic interference, electromagnetic wave interference) absorbing member may be formed under the horizontal support.
  • the measurement object may be a non-metal material.
  • the horizontal support may be a susceptor.
  • an embodiment of the wafer processing apparatus a chamber in which an internal space for depositing a thin film on a measurement object is formed;
  • a plurality of displacement detection sensor units to which an inductance method formed on the horizontal support is applied including,
  • the displacement sensor unit The displacement sensor unit,
  • a sensor unit generating an inductance of the measurement object
  • a resonance driving unit for driving the sensor unit
  • a voltage amplifying unit for amplifying a voltage by controlling a current according to a distance between the measurement object and the measurement object;
  • a temperature sensor unit for measuring a temperature and compensating for a change in a signal according to the temperature
  • a frequency measuring unit for measuring a frequency change according to the distance
  • a digital conversion unit for converting a digital value according to the distance
  • It may include; a wireless communication unit that communicates with the external server.
  • the temperature sensor unit may directly transmit a measurement signal to the digital conversion unit.
  • the present invention provides a processing method using the wafer processing apparatus, as a wafer processing method in which processing by a measurement object is performed in an internal processing space in which a wafer seated on a horizontal support is drawn in and out,
  • the distance measurement value may be individually measured for each of the plurality of displacement detection sensor units.
  • the step of reflecting the drift (drift) according to the temperature change of the displacement sensing sensor unit is corrected (calibration); may further include.
  • the correction can be calculated by the following equation (1),
  • a wafer processing apparatus and a processing method thereof according to the present invention measure and correct a tolerance for a distance value according to a movement of a showerhead in a chamber for wafer processing in advance by configuring a plurality of sensor units to which an inductance method is applied, thereby performing a wafer processing process
  • FIG. 1 is a plan view of a horizontal support according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of a wafer processing apparatus according to an embodiment of the present invention
  • FIG. 3 is a block diagram of a displacement sensor according to an embodiment of the present invention.
  • FIG. 4 is a schematic usage state diagram of a displacement sensor unit according to an embodiment of the present invention.
  • FIG. 6 is a graph showing an example of voltage amplification according to the distance measurement of the displacement sensor unit according to an embodiment of the present invention.
  • FIG. 7 to 8 are flowcharts of a wafer processing method according to an embodiment of the present invention.
  • FIG. 1 is a plan view of a lower support of a wafer processing apparatus according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of a wafer processing apparatus according to an embodiment of the present invention
  • FIG. 3 A configuration diagram of a wafer processing apparatus according to an embodiment of the present invention is shown
  • FIG. 4 schematically shows a schematic usage state diagram of a displacement sensor unit according to an embodiment of the present invention.
  • the wafer processing apparatus 300 is provided with a showerhead 50 and three displacement detection sensors 120, 130, 140 elevating in the chamber (C). It may include a horizontal support (100).
  • the chamber C is formed as a closed space for the wafer to be processed, and a showerhead 50 may be disposed on the upper portion of the chamber C to be able to move up and down in the vertical direction.
  • a horizontal support 100 on which the wafer is mounted may be formed in a lower portion of the chamber C to correspond to the showerhead 50 .
  • the horizontal support 100 may be formed of a circular plate material, and the first displacement sensor 110 , the second displacement sensor 120 , and the third displacement sensor 130 are located inside the horizontal support 100 . can be reconsidered. Accordingly, it is possible to prevent deformation due to external contamination.
  • the horizontal support 100 includes a first region in which the first displacement sensor 110 , the second displacement sensor 120 , and the third displacement sensor 130 are cored and a metal surrounding the outer circumferential surface of the first region.
  • a plate 150 may be formed. The metal plate 150 may be protected from being deformed by an external force such as an external shock or rotational force.
  • an EMI (electromagnetic interference) absorber may be attached on the lower surface of the horizontal support 100.
  • the EMI absorbing member absorbs noise that may be generated from the lower side of the first displacement sensor 110 , the second displacement sensor 120 , and the third displacement sensor 130 cored on the horizontal support 100 . can be prevented
  • a first displacement sensor 110 , a second displacement sensor 120 , and a third displacement sensor 130 may be formed on the horizontal support 100 .
  • the first displacement detection sensor 110 , the second displacement detection sensor 120 , and the third displacement detection sensor 130 may be formed of a coil sensor. They are radially disposed with respect to the rotation center of the horizontal support 100 , and may be disposed at positions having the same angle with respect to the concentric circles of the horizontal support 100 .
  • the displacement detection sensors 120, 130, 140 are preferably three, but are not limited thereto, and for example, may be disposed at a location spaced apart from the center of the horizontal support 100 by a predetermined distance. .
  • the first displacement detection sensor 110 When the first displacement detection sensor 110 among the aforementioned displacement detection sensors 120, 130, and 140 is described as an example, the first displacement detection sensor 110 generates an inductance of the showerhead 50, respectively.
  • a frequency measuring unit 114 for measuring a change in frequency
  • a digital converting unit 115 for converting a digital value according to the distance
  • a wireless communication unit 116 for communicating with an external server (not shown)
  • a temperature measuring the temperature It may include a temperature sensor unit 117 for compensating for a change in the signal.
  • the displacement detection sensors 120 , 130 , and 140 may be controlled by the controller 200 .
  • the three displacement sensors 120, 130, and 140 generate a frequency when the showerhead 50 is positioned to measure a distance value according to the frequency, respectively. have.
  • FIG. 5 is a graph showing a change in frequency according to the distance measurement of the displacement sensor according to an embodiment of the present invention
  • FIG. 6 is a voltage amplification according to the distance measurement of the displacement sensor according to an embodiment of the present invention. Graphs showing examples are shown
  • FIGS. 7 to 8 are schematic flowcharts of a wafer processing method according to an embodiment of the present invention.
  • the control method of the wafer processing apparatus includes a showerhead descending step (S10), a distance value measurement step with the showerhead (S20), and an offset adjustment step according to a change in current and temperature according to the distance value (S30) may include Specifically, the control method is a step (S100) of the showerhead 50 descending in the chamber (C) of the wafer processing apparatus 300, the displacement detection sensors 110, 120, 130) by measuring the distance (S110), comparing the measured distance value with the preset value of the measured distance to determine whether a tolerance occurs (S120), the temperature measured by the temperature sensor unit 117 It may include a step (S130) of measuring and calibrating the presence or absence of a change and a step (S150) of loading the wafer (S).
  • the showerhead 50 located at the upper side in the chamber C of the wafer processing apparatus 300 may descend in the direction of the horizontal support 100 , which is a preset position ( S100 ).
  • the three displacement detection sensors 120, 130, and 140 located inside the horizontal support 100 can measure the distance values for each of the three points of the showerhead 50 facing each other ( S110).
  • an inductance having a predetermined numerical value may be generated from the inductance sensor 111 of the first displacement sensor 110 .
  • the resonance driver 112 may configure a resonance circuit to generate a frequency having a predetermined wavelength, and the frequency measurement unit 114 may measure a change in the frequency according to the distance.
  • the magnitude of the frequency may be changed in inverse proportion to the distance, as shown in FIG. 5 .
  • the frequency measured by the frequency measuring unit 114 may represent different wavelengths when the distance values of the three points of the showerhead 50 are measured differently. Through this, a distance value from the displacement sensor units 110 , 120 , and 130 to the shower head 50 , that is, the horizontality of the shower head 50 can be measured.
  • the voltage corresponding to the peak of the frequency wavelength is measured lower than the fixed voltage level as shown in FIG. 6, the voltage is amplified by controlling the current and measured higher than the fixed voltage level. In this case, it is possible to reduce the voltage and measure it with a measuring voltage line to perform precise measurement (S120).
  • the frequency may be measured differently. Accordingly, the voltage may be adjusted by controlling the current of the displacement detection sensor units 110 , 120 , and 130 through the control unit 200 according to the frequency measurement result value.
  • a process of adjusting an offset may be performed to compensate for a slight drift change in a signal measured by the temperature sensor unit 117 of the displacement sensor units 110 , 120 , 130 ( S140).
  • the wafer 50 is loaded onto the horizontal support 100 for processing such as etching and deposition of the wafer, so that the processing of the wafer can proceed.
  • processing such as etching and deposition of the wafer, so that the processing of the wafer can proceed.
  • S150 There is (S150).

Abstract

The present invention provides an apparatus for processing a wafer and a method for processing same, the apparatus comprising: a chamber having an internal space for depositing a thin film on a measurement object; a lower support formed on the chamber and on which the measurement object is seated; a showerhead supplying gas to the measurement object; and a plurality of displacement detection sensor units formed on the lower support and to which an inductance method is applied.

Description

웨이퍼 처리 장치 및 이의 처리방법Wafer processing apparatus and processing method thereof
본 발명은 웨이퍼 박막 증착 장치 및 이의 처리방법에 관한 것이다.The present invention relates to a wafer thin film deposition apparatus and a processing method thereof.
증착이나 식각 등과 같은 반도체 제조를 위한 각종 공정은, 외부와 격리된 챔버 내에 웨이퍼를 배치한 후에 각 공정에 적합한 공정가스를 샤워헤드를 통하여 웨이퍼로 분사함으로써 이루어진다. Various processes for semiconductor manufacturing such as deposition or etching are performed by disposing a wafer in a chamber isolated from the outside and then spraying a process gas suitable for each process onto the wafer through a showerhead.
일반적으로, 종래의 웨이퍼 처리 장치는 챔버와, 상기 챔버 내의 상부에 마련되어 반응가스를 분사시키는 샤워헤드와, 상기 챔버 내의 하부에 마련되어 기판을 안착시키는 히터블럭과, 배기수단으로 구성되어 있다. 또, 상기 챔버의 일측벽 또는 양측벽에는 기판출입구가 형성되어, 상기 기판출입구를 통하여 기판이 이송수단에 의해 반입 및 반출된다.In general, a conventional wafer processing apparatus includes a chamber, a showerhead provided at an upper portion of the chamber to spray a reaction gas, a heater block provided at a lower portion of the chamber to seat a substrate, and an exhaust unit. In addition, a substrate inlet is formed on one or both walls of the chamber, and the substrate is carried in and out by the transfer means through the substrate inlet.
여기서, 상기 웨이퍼 처리 장치에 기판을 삽입하기 전에 상기 샤워헤드가 상기 히트블럭 방향으로 하강하며 미리 설정된 거리를 갖는 위치로 배치되게 된다. 그러나, 상기 샤워헤드가 상기 히트블럭 방향으로 이동하는 과정에서 수평이 맞지 않거나 틀어지는 경우에 공차가 발생되어 재작업 및 이에 따른 공정상의 비용이 발생될 수 있으므로 상기 샤워헤드의 수평도와 정확한 위치로의 이동이 가능하게 할 수 있는 기술이 요구된다.Here, before inserting the substrate into the wafer processing apparatus, the showerhead descends in the direction of the heat block and is disposed at a position having a preset distance. However, when the showerhead is not horizontal or is distorted in the process of moving in the direction of the heat block, a tolerance may occur, resulting in rework and cost in the process. The technology to make this possible is required.
본 발명은 상기한 기술적 과제를 해결하기 위하여 안출된 것으로서, 웨이퍼 처리를 위한 샤워헤드의 챔버 내 이동에 따른 거리값에 대한 공차를 인덕턴스 방식이 적용된 복수의 센서부를 구성하여 미리 측정하여 보정하도록 함으로써, 웨이퍼 처리 과정에서 발생될 수 있는 재작업에 따른 공정상의 비용 발생을 근본적으로 방지할 수 있는 웨이퍼 처리 장치 및 이의 처리방법을 제공하는 것을 그 목적으로 한다.The present invention has been devised to solve the above technical problem, and the tolerance for the distance value according to the movement of the showerhead for wafer processing in the chamber is measured and corrected in advance by configuring a plurality of sensor units to which the inductance method is applied, An object of the present invention is to provide a wafer processing apparatus and a processing method thereof, which can fundamentally prevent cost in the process due to rework that may occur in the wafer processing process.
본 발명에 따른 웨이퍼 처리 장치의 일실시예는, 웨이퍼 처리를 위한 내부 공간이 형성된 챔버;An embodiment of a wafer processing apparatus according to the present invention includes: a chamber having an internal space for wafer processing;
상기 챔버 상에 형성되고, 상기 웨이퍼가 상부에 안착되는 수평 지지대;a horizontal support formed on the chamber and on which the wafer is mounted;
상기 웨이퍼에 소스를 공급하는 측정대상물; 및a measurement object for supplying a source to the wafer; and
상기 수평 지지대에 형성되는 인덕턴스(inductance) 방식이 적용된 복수의 변위감지 센서부;를 포함할 수 있다.It may include; a plurality of displacement detection sensor units to which the inductance method is applied formed on the horizontal support.
본 발명의 일실시예에서, 상기 변위감지 센서부는,In one embodiment of the present invention, the displacement sensor unit,
상기 측정대상물의 인덕턴스를 발생시키는 센싱부;a sensing unit for generating an inductance of the measurement object;
상기 센서부를 구동하는 공진 구동부;a resonance driving unit for driving the sensor unit;
상기 측정대상물과 수평 지지대의 거리에 따라 전류를 제어하여 전압을 증폭하는 전압 증폭부;a voltage amplifier for amplifying a voltage by controlling a current according to a distance between the measurement object and the horizontal support;
온도를 측정하여 상기 온도에 따른 신호의 변화를 보상하기 위한 온도 센서부;a temperature sensor unit for measuring a temperature and compensating for a change in a signal according to the temperature;
상기 거리에 따른 주파수 변화를 측정하는 주파수 측정부;를 포함할 수 있다.It may include; a frequency measuring unit for measuring the frequency change according to the distance.
여기서, 본 발명의 일실시예에서, 상기 거리에 따른 디지털값을 변환하는 디지털 변화부; 및 외부 서버와 통신하는 무선 통신부;를 더 포함할 수 있다.Here, in an embodiment of the present invention, a digital change unit for converting a digital value according to the distance; and a wireless communication unit communicating with an external server.
본 발명의 일실시예에서, 상기 변위감지 센서부는 상기 측정대상물로부터 상기 측정대상물과의 거리 측정값에 기초하여 전류값이 조절되도록 제어될 수 있다.In an embodiment of the present invention, the displacement sensor unit may be controlled to adjust the current value based on the measured distance from the measurement object to the measurement object.
본 발명의 일실시예에서, 상기 웨이퍼 처리 장치는 상기 변위감지 센서부로부터 측정된 신호가 입력되는 제어부;를 더 포함할 수 있다.In an embodiment of the present invention, the wafer processing apparatus may further include a control unit to which a signal measured from the displacement sensor unit is input.
본 발명의 일실시예에서, 상기 변위감지 센서부는 코일(coil) 타입일 수 있다.In one embodiment of the present invention, the displacement sensor unit may be a coil (coil) type.
본 발명의 일실시예에서, 상기 변위감지 센서부는 상기 측정대상물의 동심원을 기준으로 3개가 방사형으로 동일한 각도로 배치될 수 있다.In an embodiment of the present invention, three of the displacement detection sensor units may be radially arranged at the same angle with respect to the concentric circles of the measurement object.
본 발명의 일실시예에서, 상기 변위감지 센서부는 상기 측정대상물의 동심원을 기준으로 서로 다른 이격 거리로 배치될 수 있다.In an embodiment of the present invention, the displacement sensing sensor unit may be disposed at different distances from each other based on concentric circles of the measurement object.
본 발명의 일실시예에서, 상기 변위감지 센서부는 외부에서 관찰이 불가능하도록 상기 측정대상물에 심재될 수 있다.In one embodiment of the present invention, the displacement detection sensor unit may be embedded in the measurement object so that observation from the outside is impossible.
본 발명의 일실시예에서, 상기 변위감지 센서부는 고정 주파수값(F)을 갖는 코일 센서일 수 있다.In one embodiment of the present invention, the displacement detection sensor unit may be a coil sensor having a fixed frequency value (F).
본 발명의 일실시예에서, 상기 수평 지지대의 외주면에는 금속 플레이트가 형성될 수 있다.In one embodiment of the present invention, a metal plate may be formed on the outer peripheral surface of the horizontal support.
본 발명의 일실시예에서, 상기 수평 지지대의 하부에는 전자기파 EMI (electromagnetic interference, 전자기파 간섭) 흡수부재가 형성될 수 있다.In an embodiment of the present invention, an electromagnetic wave EMI (electromagnetic interference, electromagnetic wave interference) absorbing member may be formed under the horizontal support.
본 발명의 일실시예에서, 상기 측정대상물은 비금속재일 수 있다.In one embodiment of the present invention, the measurement object may be a non-metal material.
본 발명의 일실시예에서, 상기 수평 지지대는 서셉터일 수 있다.In one embodiment of the present invention, the horizontal support may be a susceptor.
또, 본 발명에 따른 웨이퍼 처리 장치의 일실시예는, 측정대상물에 박막을 증착하는 내부 공간이 형성된 챔버;In addition, an embodiment of the wafer processing apparatus according to the present invention, a chamber in which an internal space for depositing a thin film on a measurement object is formed;
상기 챔버 상에 형성되고, 상기 측정대상물이 상부에 안착되는 수평 지지대;a horizontal support formed on the chamber and on which the measurement object is seated;
상기 측정대상물에 소스를 공급하는 측정대상물; 및a measurement object for supplying a source to the measurement object; and
상기 수평 지지대에 형성되는 인덕턴스(inductance) 방식이 적용된 복수의 변위감지 센서부;를 포함하되,A plurality of displacement detection sensor units to which an inductance method formed on the horizontal support is applied; including,
상기 변위감지 센서부는,The displacement sensor unit,
상기 측정대상물의 인덕턴스를 발생시키는 센서부;a sensor unit generating an inductance of the measurement object;
상기 센서부를 구동하는 공진 구동부;a resonance driving unit for driving the sensor unit;
상기 측정대상물과 측정대상물의 거리에 따라 전류를 제어하여 전압을 증폭하는 전압 증폭부;a voltage amplifying unit for amplifying a voltage by controlling a current according to a distance between the measurement object and the measurement object;
온도를 측정하여 상기 온도에 따른 신호의 변화를 보상하기 위한 온도 센서부;a temperature sensor unit for measuring a temperature and compensating for a change in a signal according to the temperature;
상기 거리에 따른 주파수 변화를 측정하는 주파수 측정부;a frequency measuring unit for measuring a frequency change according to the distance;
상기 거리에 따른 디지털값을 변환하는 디지털 변환부; 및 a digital conversion unit for converting a digital value according to the distance; and
외부 서버와 통신하는 무선 통신부;를 포함할 수 있다.It may include; a wireless communication unit that communicates with the external server.
본 발명의 일실시예에서, 상기 온도 센서부는 상기 디지털 변환부에 측정 신호를 직접 전송할 수 있다.In an embodiment of the present invention, the temperature sensor unit may directly transmit a measurement signal to the digital conversion unit.
한편, 본 발명은 상기 웨이퍼 처리 장치를 이용한 처리방법을 제공하는 바, 수평 지지대 상에 안착되는 웨이퍼가 인입 및 인출되는 내부 처리 공간에서 측정대상물에 의한 처리가 이루어지는 웨이퍼 처리 방법으로써,On the other hand, the present invention provides a processing method using the wafer processing apparatus, as a wafer processing method in which processing by a measurement object is performed in an internal processing space in which a wafer seated on a horizontal support is drawn in and out,
(1) 상기 내부 처리 공간인 챔버 상에 상기 측정대상물이 상기 수평 지지대 측으로 하강하는 단계;(1) descending the measurement object toward the horizontal support on the chamber, which is the internal processing space;
(2) 상기 수평 지지대에 심재되며 인덕턴스(inductance) 방식이 적용된 복수의 변위감지 센서부에 의하여 상기 수평 지지대로부터 상기 측정대상물과의 거리 측정값이 측정되는 단계; 및(2) measuring a distance measurement value from the horizontal support to the measurement object by a plurality of displacement detection sensor units cored on the horizontal support and to which an inductance method is applied; and
(3) 상기 거리 측정값에 따라서 기설정된 고정값으로 상기 변위감지 센서부의 전류값을 조절하는 단계;를 포함(3) adjusting the current value of the displacement sensor unit to a preset fixed value according to the distance measurement value;
본 발명의 일실시예에서, 상기 거리 측정값은 상기 복수의 변위감지 센서부마다 개별적으로 측정될 수 있다.In an embodiment of the present invention, the distance measurement value may be individually measured for each of the plurality of displacement detection sensor units.
본 발명의 일실시예에서, 상기 변위감지 센서부의 온도 변화에 따른 드리프트(drift)를 반영하여 보정(calibration)되는 단계;를 더 포함할 수 있다.In one embodiment of the present invention, the step of reflecting the drift (drift) according to the temperature change of the displacement sensing sensor unit is corrected (calibration); may further include.
본 발명의 일실시예에서, 상기 보정은 하기 식(1)에 의하여 계산될 수 있다,In one embodiment of the present invention, the correction can be calculated by the following equation (1),
Figure PCTKR2021003458-appb-img-000001
Figure PCTKR2021003458-appb-img-000001
(F: 주파수, L: 인덕턴스, C: 캐패시턴스)(F: frequency, L: inductance, C: capacitance)
본 발명에 따른 웨이퍼 처리 장치 및 이의 처리방법은 웨이퍼 처리를 위한 샤워헤드의 챔버 내 이동에 따른 거리값에 대한 공차를 인덕턴스 방식이 적용된 복수의 센서부를 구성하여 미리 측정하여 보정하도록 함으로써, 웨이퍼 처리 과정에서 발생될 수 있는 재작업에 따른 작업비용 발생을 근본적으로 방지할 수 있는 효과가 있다.A wafer processing apparatus and a processing method thereof according to the present invention measure and correct a tolerance for a distance value according to a movement of a showerhead in a chamber for wafer processing in advance by configuring a plurality of sensor units to which an inductance method is applied, thereby performing a wafer processing process There is an effect that can fundamentally prevent the occurrence of work costs due to rework that may occur in the workplace.
도 1은 본 발명의 일실시예에 따른 수평 지지대의 평면도이고, 1 is a plan view of a horizontal support according to an embodiment of the present invention,
도 2는 본 발명의 일실시예에 따른 웨이퍼 처리 장치의 개략적인 단면도이고,2 is a schematic cross-sectional view of a wafer processing apparatus according to an embodiment of the present invention;
도 3은 본 발명의 일실시예에 따른 변위감지 센서의 구성도이고,3 is a block diagram of a displacement sensor according to an embodiment of the present invention;
도 4는 본 발명의 일실시예에 따른 변위감지 센서부의 개략적인 사용 상태도이고,4 is a schematic usage state diagram of a displacement sensor unit according to an embodiment of the present invention;
도 5는 본 발명의 일실시예에 따른 변위감지 센서부의 거리 측정에 따른 주파수 변화를 나타내는 그래프이고,5 is a graph showing the change in frequency according to the distance measurement of the displacement sensor according to an embodiment of the present invention;
도 6은 본 발명의 일실시예에 따른 변위감지 센서부의 거리 측정에 따른 전압 증폭 예를 나타내는 그래프들이고,6 is a graph showing an example of voltage amplification according to the distance measurement of the displacement sensor unit according to an embodiment of the present invention;
도 7 내지 도 8은 본 발명의 일실시예에 따른 웨이퍼 처리 방법의 흐름도이다.7 to 8 are flowcharts of a wafer processing method according to an embodiment of the present invention.
이하, 본 발명에 따른 웨이퍼 처리 장치 및 이의 처리방법의 일 실시예를 첨부된 도면을 참조하여 상세하게 설명하기로 한다. 각 도면의 구성요소들에 참조부호를 부가함에 있어서, 동일한 구성요소들에 대해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 부호를 가지도록 하고 있음에 유의해야 한다. 또한, 본 발명의 실시예를 설명함에 있어, 관련된 공지 구성 도는 기능에 대한 구체적인 설명이 본 발명의 실시예에 대한 이해를 방해한다고 판단되는 경우에는 그 상세한 설명은 생략한다.Hereinafter, an embodiment of a wafer processing apparatus and a processing method thereof according to the present invention will be described in detail with reference to the accompanying drawings. In adding reference numerals to the components of each drawing, it should be noted that the same components are given the same reference numerals as much as possible even though they are indicated on different drawings. In addition, in describing the embodiment of the present invention, if it is determined that a detailed description of a related known configuration or function interferes with the understanding of the embodiment of the present invention, the detailed description thereof will be omitted.
본 발명의 실시예의 구성 요소를 설명하는 데 있어서, 제1, 제2, A, B, (a), (b) 등의 용어를 사용할 수 있다. 이러한 용어는 그 구성 요소를 다른 구성 요소와 구별하기 위한 것일 뿐, 그 용어에 의해 해당 구성 요소의 본질이나 차례 또는 순서 등이 한정되지 않는다. 또한, 다르게 정의되지 않는 한, 기술적이거나 과학적인 용어를 포함해서 여기서 사용되는 모든 용어들은 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 가진다. 일반적으로 사용되는 사전에 정의되어 있는 것과 같은 용어들은 관련 기술의 문맥상 가지는 의미와 일치하는 의미를 가진 것으로 해석되어야 하며, 본 출원에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다.In describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only for distinguishing the components from other components, and the essence, order, or order of the components are not limited by the terms. In addition, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related art, and should not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present application. does not
도 1에는 본 발명의 일실시예에 따른 웨이퍼 처리 장치의 하부 지지대의 평면도가 도시되어 있고, 도 2에는 본 발명의 일실시예에 따른 웨이퍼 처리 장치의 개략적인 단면도가 도시되어 있고, 도 3에는 본 발명의 일실시예에 따른 웨이퍼 처리 장치의 구성도가 도시되어 있으며, 도 4에는 본 발명의 일실시예에 따른 변위감지 센서부의 개략적인 사용 상태도가 모식적으로 도시되어 있다.1 is a plan view of a lower support of a wafer processing apparatus according to an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view of a wafer processing apparatus according to an embodiment of the present invention, and FIG. 3 A configuration diagram of a wafer processing apparatus according to an embodiment of the present invention is shown, and FIG. 4 schematically shows a schematic usage state diagram of a displacement sensor unit according to an embodiment of the present invention.
도 1 내지 도 4를 참조하면, 본 발명에 따른 웨이퍼 처리 장치(300)는 챔버(C) 내에서 승하강하는 샤워헤드(50) 및 3개의 변위감지 센서(120, 130, 140)가 구비된 수평 지지대(100)를 포함할 수 있다.1 to 4, the wafer processing apparatus 300 according to the present invention is provided with a showerhead 50 and three displacement detection sensors 120, 130, 140 elevating in the chamber (C). It may include a horizontal support (100).
챔버(C)는 공정 대상인 상기 웨이퍼에 대한 밀폐 공간으로 형성되고, 챔버(C)의 상부에는 상하 방향으로 승강이 가능하게 샤워헤드(50)가 배치될 수 있다. 챔버(C)의 하부에는 샤워헤드(50)에 대응하여 상기 웨이퍼가 안착되는 수평 지지대(100)가 형성될 수 있다.The chamber C is formed as a closed space for the wafer to be processed, and a showerhead 50 may be disposed on the upper portion of the chamber C to be able to move up and down in the vertical direction. A horizontal support 100 on which the wafer is mounted may be formed in a lower portion of the chamber C to correspond to the showerhead 50 .
수평 지지대(100)는 원형의 판재로 형성될 수 있고, 제1 변위감지 센서(110), 제2 변위감지 센서(120) 및 제3 변위감지 센서(130)가 수평 지지대(100)의 내부에 심재될 수 있다. 따라서, 외부 오염에 의한 변형을 방지할 수 있다. 또, 수평 지지대(100)는 제1 변위감지 센서(110), 제2 변위감지 센서(120) 및 제3 변위감지 센서(130)가 심재된 제1 영역과 상기 제1 영역의 외주면을 감싸는 금속 플레이트(150)가 형성될 수 있다. 금속 플레이트(150)는 외부 충격이나 회전력 등에 의한 외력에 의하여 변형되지 않도록 보호할 수 있다.The horizontal support 100 may be formed of a circular plate material, and the first displacement sensor 110 , the second displacement sensor 120 , and the third displacement sensor 130 are located inside the horizontal support 100 . can be reconsidered. Accordingly, it is possible to prevent deformation due to external contamination. In addition, the horizontal support 100 includes a first region in which the first displacement sensor 110 , the second displacement sensor 120 , and the third displacement sensor 130 are cored and a metal surrounding the outer circumferential surface of the first region. A plate 150 may be formed. The metal plate 150 may be protected from being deformed by an external force such as an external shock or rotational force.
수평 지지대(100)의 하면에는, 본 발명의 도면에는 도시되어 있지 않지만, EMI(electromagnetic interference) 흡수체가 부착될 수 있다. 상기 EMI 흡수부재는 수평 지지대(100)에 심재되어 있는 제1 변위감지 센서(110), 제2 변위감지 센서(120) 및 제3 변위감지 센서(130)의 하부 측으로부터 발생될 수 있는 노이즈를 방지할 수 있다.On the lower surface of the horizontal support 100, although not shown in the drawings of the present invention, an EMI (electromagnetic interference) absorber may be attached. The EMI absorbing member absorbs noise that may be generated from the lower side of the first displacement sensor 110 , the second displacement sensor 120 , and the third displacement sensor 130 cored on the horizontal support 100 . can be prevented
수평 지지대(100)에는 제1 변위감지 센서(110), 제2 변위감지 센서(120) 및 제3 변위감지 센서(130)가 형성될 수 있다. 제1 변위감지 센서(110), 제2 변위감지 센서(120) 및 제3 변위감지 센서(130)는 코일(coil) 센서로 형성될 수 있따. 이들은 수평 지지대(100)의 회전 중심을 기준으로 방사형으로 배치되되, 수평 지지대(100)의 동심원을 기준으로 동일한 각도를 갖는 위치에 배치될 수 있다. 본 발명에 따르면, 변위감지 센서(120, 130, 140)는 3개가 바람직하나, 이에 한정되는 것은 아니며, 예를 들어 수평 지지대(100)의 중심부로부터 소정의 거리로 이격된 위치에 배치될 수 있다.A first displacement sensor 110 , a second displacement sensor 120 , and a third displacement sensor 130 may be formed on the horizontal support 100 . The first displacement detection sensor 110 , the second displacement detection sensor 120 , and the third displacement detection sensor 130 may be formed of a coil sensor. They are radially disposed with respect to the rotation center of the horizontal support 100 , and may be disposed at positions having the same angle with respect to the concentric circles of the horizontal support 100 . According to the present invention, the displacement detection sensors 120, 130, 140 are preferably three, but are not limited thereto, and for example, may be disposed at a location spaced apart from the center of the horizontal support 100 by a predetermined distance. .
전술한 변위감지 센서(120, 130, 140) 중 제1 변위감지 센서(110)를 예로 하여 설명하면, 제 1 변위감지 센서(110)는 각각 샤워헤드(50)의 인덕턴스(inductance)를 발생시키는 인덕턴스 센서(111), 인덕턴스 센서(111)를 구동시키는 공진 구동부(112), 샤워헤드(50) 수평 지지대의 거리에 따라 전류를 제어하여 전압을 증폭하는 전압 증폭부(113), 상기 거리에 따른 주파수 변화를 측정하는 주파수 측정부(114), 상기 거리에 따른 디지털값을 변환하는 디지털 변화부(115), 외부 서버(미도시)와 통신하는 무선 통신부(116) 및 온도를 측정하여 상기 온도에 따른 신호의 변화를 보상하기 위한 온도 센서부(117)를 포함할 수 있다. 여기서, 변위감지 센서(120, 130, 140)는 제어부(200)에 의하여 제어가 가능할 수 있다.When the first displacement detection sensor 110 among the aforementioned displacement detection sensors 120, 130, and 140 is described as an example, the first displacement detection sensor 110 generates an inductance of the showerhead 50, respectively. The inductance sensor 111, the resonance driving unit 112 for driving the inductance sensor 111, the voltage amplifying unit 113 for amplifying the voltage by controlling the current according to the distance of the showerhead 50 horizontal support, according to the distance A frequency measuring unit 114 for measuring a change in frequency, a digital converting unit 115 for converting a digital value according to the distance, a wireless communication unit 116 for communicating with an external server (not shown), and a temperature measuring the temperature It may include a temperature sensor unit 117 for compensating for a change in the signal. Here, the displacement detection sensors 120 , 130 , and 140 may be controlled by the controller 200 .
따라서, 3개의 변위감지 센서(120, 130, 140)는, 도 4에 도시된 바와 같이, 샤워헤드(50)가 정 위치되는 경우에 주파수를 발생시켜 상기 주파수에 따른 거리값을 각각 측정할 수 있다.Therefore, as shown in FIG. 4, the three displacement sensors 120, 130, and 140 generate a frequency when the showerhead 50 is positioned to measure a distance value according to the frequency, respectively. have.
이하에서는 전술한 변위감지 센서를 포함하는 본 발명에 따른 웨이퍼 처리 장치(300)의 구체적인 작동과정에 대해서 설명한다.Hereinafter, a detailed operation process of the wafer processing apparatus 300 according to the present invention including the above-described displacement detection sensor will be described.
도 5에는 본 발명의 일실시예에 따른 변위감지 센서부의 거리 측정에 따른 주파수 변화를 나타내는 그래프가 도시되어 있고, 도 6에는 본 발명의 일실시예에 따른 변위감지 센서부의 거리 측정에 따른 전압 증폭 예를 나타내는 그래프들이 도시되어 있으며, 도 7 내지 도 8에는 본 발명의 일실시예에 따른 웨이퍼 처리 방법의 흐름도가 모식적으로 도시되어 있다.5 is a graph showing a change in frequency according to the distance measurement of the displacement sensor according to an embodiment of the present invention, and FIG. 6 is a voltage amplification according to the distance measurement of the displacement sensor according to an embodiment of the present invention. Graphs showing examples are shown, and FIGS. 7 to 8 are schematic flowcharts of a wafer processing method according to an embodiment of the present invention.
본 발명에 따른 웨이퍼 처리 장치의 제어방법은 샤워헤드 하강 단계(S10), 상기 샤워헤드와의 거리값 측정 단계(S20) 및 상기 거리값에 따라 전류값 및 온도 변화에 따른 옵셋 조절 단계(S30)포함할 수 있다. 구체적으로, 상기 제어방법은 웨이퍼 처리 장치(300)의 챔버(C) 내에서 샤워헤드(50)가 하강하는 단계(S100), 수평 지지대(100)에 심재 되어 있는 변위감지 센서(110, 120, 130)에 의한 거리 측정단계(S110), 측정된 상기 거리의 기설정값에 대한 상기 측정된 거리값을 비교하여 공차발생 여부를 판단하는 단계(S120), 온도 센서부(117)에서 측정된 온도 변화 유무를 측정 및 보정(Calibration)하는 단계(S130) 및 웨이퍼(S) 로딩 단계(S150)을 포함할 수 있다.The control method of the wafer processing apparatus according to the present invention includes a showerhead descending step (S10), a distance value measurement step with the showerhead (S20), and an offset adjustment step according to a change in current and temperature according to the distance value (S30) may include Specifically, the control method is a step (S100) of the showerhead 50 descending in the chamber (C) of the wafer processing apparatus 300, the displacement detection sensors 110, 120, 130) by measuring the distance (S110), comparing the measured distance value with the preset value of the measured distance to determine whether a tolerance occurs (S120), the temperature measured by the temperature sensor unit 117 It may include a step (S130) of measuring and calibrating the presence or absence of a change and a step (S150) of loading the wafer (S).
먼저, 웨이퍼 처리 장치(300)의 챔버(C) 내에서 상측에 위치한 샤워헤드(50)가 기설정된 위치인 수평 지지대(100) 방향으로 하강할 수 있다(S100). First, the showerhead 50 located at the upper side in the chamber C of the wafer processing apparatus 300 may descend in the direction of the horizontal support 100 , which is a preset position ( S100 ).
수평 지지대(100)의 내측에 심재되어 있는 3개의 변위감지 센서(120, 130, 140)는 대면하는 샤워헤드(50)의 3개의 지점(point)에 대한 각각의 거리값을 측정할 수 있다(S110). 이 때, 제 1 변위감지 센서(110)의 인덕턴스 센서(111)로부터 소정의 수치값을 갖는 인덕턴스(inductance)가 발생될 수 있다. 이어서 공진 구동부(112)는 공진 회로를 구성하여 소정의 파장을 갖는 주파수를 발생시킬 수 있고, 주파수 측정부(114)는 상기 거리에 따라 상기 주파수의 변화를 측정할 수 있다. 상기 주파수의 크기는, 도 5에 도시된 바와 같이, 거리에 반비례하여 변화될 수 있다.The three displacement detection sensors 120, 130, and 140 located inside the horizontal support 100 can measure the distance values for each of the three points of the showerhead 50 facing each other ( S110). In this case, an inductance having a predetermined numerical value may be generated from the inductance sensor 111 of the first displacement sensor 110 . Subsequently, the resonance driver 112 may configure a resonance circuit to generate a frequency having a predetermined wavelength, and the frequency measurement unit 114 may measure a change in the frequency according to the distance. The magnitude of the frequency may be changed in inverse proportion to the distance, as shown in FIG. 5 .
주파수 측정부(114)에서 측정되는 상기 주파수는 샤워헤드(50)의 상기 3개의 지점의 거리값이 다르게 측정되는 경우에 다른 크기의 파장을 나타낼 수 있다. 이를 통하여 변위감지 센서부(110, 120, 130)로부터 샤워헤드(50)까지의 거리값, 즉 샤워헤드(50)의 수평도를 측정할 수 있다.The frequency measured by the frequency measuring unit 114 may represent different wavelengths when the distance values of the three points of the showerhead 50 are measured differently. Through this, a distance value from the displacement sensor units 110 , 120 , and 130 to the shower head 50 , that is, the horizontality of the shower head 50 can be measured.
만약, 상기 주파수 파장의 피크(peak)에 해당하는 전압이, 도 6에 도시된 바와 같이, 고정전압 크기 보다 낮게 측정되는 경우에는 전류를 제어하여 상기 전압을 증폭시키고 고정전압 크기 보다 높에 측정되는 경우에는 상기 전압을 감소시키고 측정 전압 라인으로 측정하여 정밀한 계측을 수행할 수 있다(S120).If the voltage corresponding to the peak of the frequency wavelength is measured lower than the fixed voltage level as shown in FIG. 6, the voltage is amplified by controlling the current and measured higher than the fixed voltage level. In this case, it is possible to reduce the voltage and measure it with a measuring voltage line to perform precise measurement (S120).
즉, 3개의 변위감지 센서부(110, 120, 130)의 각각에서 측정되는 샤워헤드(50)까지의 3개의 지점에 따른 거리가 다르게 측정되는 경우에 상기 주파수가 다르게 측정될 수 있다. 따라서, 상기 주파수 측정 결과값에 따라, 제어부(200)를 통하여 변위감지 센서부(110, 120, 130)의 전류를 제어하여 상기 전압을 조절할 수 있다.That is, when distances according to three points from each of the three displacement sensing sensor units 110 , 120 , and 130 to the showerhead 50 are measured differently, the frequency may be measured differently. Accordingly, the voltage may be adjusted by controlling the current of the displacement detection sensor units 110 , 120 , and 130 through the control unit 200 according to the frequency measurement result value.
한편, 추가적으로 변위감지 센서부(110, 120, 130)의 온도 센서부(117)에서 측정되는 신호의 미세한 드리프트(drift) 변화를 보상하기 위하여 오프셋(offset)을 조절하는 과정이 수행될 수 있다(S140). On the other hand, additionally, a process of adjusting an offset may be performed to compensate for a slight drift change in a signal measured by the temperature sensor unit 117 of the displacement sensor units 110 , 120 , 130 ( S140).
최종적으로, 전술한 공차에 대한 보정이 수행된 후에 상기 웨이퍼의 에칭, 증착 등의 처리를 위하여 웨이퍼(50)가 수평 지지대(100)에 로딩되는 과정이 수행됨으로써, 상기 웨이퍼의 처리 과정이 진행될 수 있다(S150).Finally, after the above-mentioned tolerance has been corrected, the wafer 50 is loaded onto the horizontal support 100 for processing such as etching and deposition of the wafer, so that the processing of the wafer can proceed. There is (S150).
이상, 본 발명에 따른 웨이퍼 처리 장치 및 이의 처리방법에 대한 일 실시예를 첨부된 도면을 참조하여 상세하게 설명하였다. 그러나, 본 발명의 실시예가 반드시 상술한 일 실시예에 의하여 한정되는 것은 아니고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의한 다양한 변형 및 균등한 범위에서의 실시가 가능함은 당연하다고 할 것이다. 그러므로, 본 발명의 진정한 권리범위는 후술하는 청구범위에 의하여 정해진다고 할 것이다.Above, an embodiment of a wafer processing apparatus and a processing method thereof according to the present invention has been described in detail with reference to the accompanying drawings. However, the embodiment of the present invention is not necessarily limited by the above-described embodiment, and it is natural that various modifications and implementations within an equivalent range are possible by those skilled in the art to which the present invention pertains. will be. Therefore, the true scope of the present invention will be determined by the claims to be described later.

Claims (20)

  1. 웨이퍼 처리를 위한 내부 공간이 형성된 챔버;a chamber having an internal space for wafer processing;
    상기 챔버 상에 형성되고, 상기 웨이퍼가 상부에 안착되는 수평 지지대;a horizontal support formed on the chamber and on which the wafer is mounted;
    상기 웨이퍼에 소스를 공급하는 측정대상물; 및a measurement object for supplying a source to the wafer; and
    상기 수평 지지대에 형성되는 인덕턴스(inductance) 방식이 적용된 복수의 변위감지 센서부;를 포함하는 웨이퍼 처리 장치.A wafer processing apparatus including a; a plurality of displacement detection sensor units to which an inductance method is applied formed on the horizontal support.
  2. 제 1 항에 있어서,The method of claim 1,
    상기 변위감지 센서부는,The displacement sensor unit,
    상기 측정대상물의 인덕턴스를 발생시키는 센싱부;a sensing unit for generating an inductance of the measurement object;
    상기 센서부를 구동하는 공진 구동부;a resonance driving unit for driving the sensor unit;
    상기 측정대상물과 수평 지지대의 거리에 따라 전류를 제어하여 전압을 증폭하는 전압 증폭부;a voltage amplifier for amplifying a voltage by controlling a current according to a distance between the measurement object and the horizontal support;
    온도를 측정하여 상기 온도에 따른 신호의 변화를 보상하기 위한 온도 센서부;a temperature sensor unit for measuring a temperature and compensating for a change in a signal according to the temperature;
    상기 거리에 따른 주파수 변화를 측정하는 주파수 측정부;를 포함하는 웨이퍼 처리 장치.Wafer processing apparatus comprising a; frequency measuring unit for measuring the frequency change according to the distance.
  3. 제 2 항에 있어서,3. The method of claim 2,
    상기 거리에 따른 디지털값을 변환하는 디지털 변화부; 및 a digital change unit for converting a digital value according to the distance; and
    외부 서버와 통신하는 무선 통신부;를 더 포함하는 것을 특징으로 하는 웨이퍼 처리 장치.The wafer processing apparatus further comprising; a wireless communication unit communicating with an external server.
  4. 제 1 항에 있어서,The method of claim 1,
    상기 변위감지 센서부는 상기 측정대상물로부터 상기 측정대상물과의 거리 측정값에 기초하여 전류값이 조절되도록 제어되는 것을 특징으로 하는 웨이퍼 처리 장치.The displacement sensor unit is a wafer processing apparatus, characterized in that the control so as to adjust the current value based on the measured distance from the measurement object to the measurement object.
  5. 제 1 항에 있어서,The method of claim 1,
    상기 웨이퍼 처리 장치는 상기 변위감지 센서부로부터 측정된 신호가 입력되는 제어부;를 더 포함하는 것을 특징으로 하는 웨이퍼 처리 장치.The wafer processing apparatus further comprises a controller to which a signal measured from the displacement sensor is input.
  6. 제 1 항에 있어서,The method of claim 1,
    상기 변위감지 센서부는 코일(coil) 타입인 것을 특징으로 하는 웨이퍼 처리 장치.The displacement sensor unit is a wafer processing apparatus, characterized in that the coil (coil) type.
  7. 제 1 항에 있어서,The method of claim 1,
    상기 변위감지 센서부는 상기 측정대상물의 동심원을 기준으로 3개가 방사형으로 동일한 각도로 배치되는 것을 특징으로 하는 웨이퍼 처리 장치.The wafer processing apparatus, characterized in that three displacement detection sensor units are radially arranged at the same angle with respect to the concentric circle of the measurement object.
  8. 제 1 항에 있어서,The method of claim 1,
    상기 변위감지 센서부는 상기 측정대상물의 동심원을 기준으로 서로 다른 이격 거리로 배치되는 것을 특징으로 하는 웨이퍼 처리 장치.The displacement detection sensor unit is a wafer processing apparatus, characterized in that disposed at different distances from each other based on the concentric circle of the measurement object.
  9. 제 1 항에 있어서,The method of claim 1,
    상기 변위감지 센서부는 외부에서 관찰이 불가능하도록 상기 측정대상물에 심재되어 있는 것을 특징으로 하는 웨이퍼 처리 장치.The displacement detection sensor unit is a wafer processing apparatus, characterized in that it is embedded in the object to be measured so that it cannot be observed from the outside.
  10. 제 1 항에 있어서,The method of claim 1,
    상기 변위감지 센서부는 고정 주파수값(F)을 갖는 코일 센서인 웨이퍼 처리 장치.The displacement detection sensor unit is a wafer processing apparatus that is a coil sensor having a fixed frequency value (F).
  11. 제 1 항에 있어서,The method of claim 1,
    상기 수평 지지대의 외주면에는 금속 플레이트가 형성되어 있는 것을 특징으로 하는 웨이퍼 처리 장치.A wafer processing apparatus, characterized in that a metal plate is formed on the outer peripheral surface of the horizontal support.
  12. 제 1 항에 있어서,The method of claim 1,
    상기 수평 지지대의 하부에는 전자기파 EMI (electromagnetic interference, 전자기파 간섭) 흡수부재가 형성되어 있는 것을 특징으로 하는 웨이퍼 처리 장치.A wafer processing apparatus, characterized in that the electromagnetic wave EMI (electromagnetic interference, electromagnetic wave interference) absorbing member is formed under the horizontal support.
  13. 제 1 항에 있어서,The method of claim 1,
    상기 측정대상물은 비금속재인 것을 특징으로 하는 웨이퍼 처리 장치.The measurement object is a wafer processing apparatus, characterized in that the non-metal material.
  14. 제 1 항에 있어서,The method of claim 1,
    상기 수평 지지대는 서셉터인 것을 특징으로 하는 웨이퍼 처리 장치.The horizontal support is a wafer processing apparatus, characterized in that the susceptor.
  15. 측정대상물에 박막을 증착하는 내부 공간이 형성된 챔버;a chamber having an internal space for depositing a thin film on a measurement object;
    상기 챔버 상에 형성되고, 상기 측정대상물이 상부에 안착되는 수평 지지대;a horizontal support formed on the chamber and on which the measurement object is seated;
    상기 측정대상물에 소스를 공급하는 측정대상물; 및a measurement object for supplying a source to the measurement object; and
    상기 수평 지지대에 형성되는 인덕턴스(inductance) 방식이 적용된 복수의 변위감지 센서부;를 포함하되,A plurality of displacement detection sensor units to which an inductance method formed on the horizontal support is applied; including,
    상기 변위감지 센서부는,The displacement sensor unit,
    상기 측정대상물의 인덕턴스를 발생시키는 센서부;a sensor unit generating an inductance of the measurement object;
    상기 센서부를 구동하는 공진 구동부;a resonance driving unit for driving the sensor unit;
    상기 측정대상물과 측정대상물의 거리에 따라 전류를 제어하여 전압을 증폭하는 전압 증폭부;a voltage amplifying unit for amplifying a voltage by controlling a current according to a distance between the measurement object and the measurement object;
    온도를 측정하여 상기 온도에 따른 신호의 변화를 보상하기 위한 온도 센서부;a temperature sensor unit for measuring a temperature and compensating for a change in a signal according to the temperature;
    상기 거리에 따른 주파수 변화를 측정하는 주파수 측정부;a frequency measuring unit for measuring a frequency change according to the distance;
    상기 거리에 따른 디지털값을 변환하는 디지털 변환부; 및 a digital conversion unit for converting a digital value according to the distance; and
    외부 서버와 통신하는 무선 통신부;를 포함하는 웨이퍼 처리 장치.A wafer processing apparatus comprising a; a wireless communication unit communicating with an external server.
  16. 제 15 항에 있어서,16. The method of claim 15,
    상기 온도 센서부는 상기 디지털 변환부에 측정 신호를 직접 전송하는 것을 특징으로 하는 웨이퍼 처리 장치.The wafer processing apparatus, characterized in that the temperature sensor unit directly transmits the measurement signal to the digital conversion unit.
  17. 수평 지지대 상에 안착되는 웨이퍼가 인입 및 인출되는 내부 처리 공간에서 측정대상물에 의한 처리가 이루어지는 웨이퍼 처리 방법으로써,As a wafer processing method in which processing by a measurement object is performed in an internal processing space in which a wafer seated on a horizontal support is drawn in and out,
    (1) 상기 내부 처리 공간인 챔버 상에 상기 측정대상물이 상기 수평 지지대 측으로 하강하는 단계;(1) descending the measurement object toward the horizontal support on the chamber, which is the internal processing space;
    (2) 상기 수평 지지대에 심재되며 인덕턴스(inductance) 방식이 적용된 복수의 변위감지 센서부에 의하여 상기 수평 지지대로부터 상기 측정대상물과의 거리 측정값이 측정되는 단계; 및(2) measuring a distance measurement value from the horizontal support to the measurement object by a plurality of displacement detection sensor units cored on the horizontal support and to which an inductance method is applied; and
    (3) 상기 거리 측정값에 따라서 기설정된 고정값으로 상기 변위감지 센서부의 전류값을 조절하는 단계;를 포함하는 웨이퍼 처리 방법.(3) adjusting the current value of the displacement sensor unit to a predetermined fixed value according to the distance measurement value;
  18. 제 17 항에 있어서,18. The method of claim 17,
    상기 거리 측정값은 상기 복수의 변위감지 센서부마다 개별적으로 측정되는 것을 특징으로 하는 웨이퍼 처리 방법.The distance measurement value is a wafer processing method, characterized in that it is individually measured for each of the plurality of displacement detection sensor unit.
  19. 제 17 항에 있어서,18. The method of claim 17,
    상기 변위감지 센서부의 온도 변화에 따른 드리프트(drift)를 반영하여 보정(calibration)되는 단계;를 더 포함하는 것을 특징으로 하는 웨이퍼 처리 방법.Wafer processing method, characterized in that it further comprises; reflecting the drift (drift) according to the change in temperature of the displacement sensor unit (calibration);
  20. 제 19 항에 있어서,20. The method of claim 19,
    상기 보정은 하기 식(1)에 의하여 계산되는 것을 특징으로 하는 웨이퍼 처리 방법,The correction is a wafer processing method, characterized in that calculated by the following formula (1),
    Figure PCTKR2021003458-appb-img-000002
    Figure PCTKR2021003458-appb-img-000002
    (F: 주파수, L: 인덕턴스, C: 캐패시턴스)(F: frequency, L: inductance, C: capacitance)
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US20010009141A1 (en) * 1997-03-24 2001-07-26 Hua-Shuang Kong Susceptor designs for silicon carbide thin films
JP2012112751A (en) * 2010-11-24 2012-06-14 Mitsubishi Electric Corp Sensor and method for detecting constituent metal of object and distance to object
KR20130001257A (en) * 2010-06-10 2013-01-03 파나소닉 주식회사 Position sensor
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KR20150094537A (en) * 2014-02-11 2015-08-19 램 리써치 코포레이션 Ball screw showerhead module adjuster assembly for showerhead module of semiconductor substrate processing apparatus

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KR20130001257A (en) * 2010-06-10 2013-01-03 파나소닉 주식회사 Position sensor
JP2012112751A (en) * 2010-11-24 2012-06-14 Mitsubishi Electric Corp Sensor and method for detecting constituent metal of object and distance to object
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