WO2021190378A1 - 发光基板、背光源和显示装置 - Google Patents

发光基板、背光源和显示装置 Download PDF

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Publication number
WO2021190378A1
WO2021190378A1 PCT/CN2021/081324 CN2021081324W WO2021190378A1 WO 2021190378 A1 WO2021190378 A1 WO 2021190378A1 CN 2021081324 W CN2021081324 W CN 2021081324W WO 2021190378 A1 WO2021190378 A1 WO 2021190378A1
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WIPO (PCT)
Prior art keywords
light
emitting
transmission
substrate
line
Prior art date
Application number
PCT/CN2021/081324
Other languages
English (en)
French (fr)
Inventor
杨智超
王建
张勇
秦相磊
林坚
张丽敏
孙泽鹏
唐亮珍
段智龙
金红贵
安亚帅
乜玲芳
Original Assignee
京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/627,311 priority Critical patent/US20220263000A1/en
Publication of WO2021190378A1 publication Critical patent/WO2021190378A1/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133612Electrical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

Definitions

  • the present disclosure relates to the field of display technology, in particular to light-emitting substrates, backlights and display devices.
  • Mini-LED (mini light-emitting diode) light-emitting modules can be used as backlight modules in liquid crystal display devices to improve display contrast.
  • the Mini-LED can be controlled in zones.
  • it is prone to the problem that the Mini-LED in the partition that should be turned off is still lit.
  • the embodiments of the present disclosure provide a light-emitting substrate, a backlight, and a display device.
  • a light-emitting substrate including:
  • a substrate having a first surface and a second surface opposite to each other, the substrate including a light-emitting area and a binding area located on one side of the light-emitting area;
  • a light-emitting unit arranged on the first surface of the substrate and located in the light-emitting area, the light-emitting unit comprising a plurality of light-emitting elements connected together;
  • the transmission line provided on the substrate, wherein:
  • At least a part of the at least one transmission line is located on the second surface of the substrate, and
  • the two ends of the light emitting unit are respectively connected to the binding area through different transmission lines.
  • At least one of the transmission lines includes a first transmission portion and a second transmission portion, the first transmission portion is located on the second surface of the substrate, and one end of the first transmission portion is connected to the first transmission portion.
  • the two transmission parts are connected, the other end of the first transmission part extends to the binding area, the second transmission part passes through the first via hole on the substrate, and is connected to the first transmission part and the The light-emitting unit is connected.
  • the light-emitting unit further includes: connecting wires, and signal lines located at both ends of the light-emitting unit, the multiple light-emitting elements in the light-emitting unit are divided into at least one group, and each group includes connecting wires connected in series. For the multiple light-emitting elements between the two ends of the light-emitting unit, every two adjacent light-emitting elements in the same group are connected by the connecting line, and the first and last two light-emitting elements in the same group are respectively passed through corresponding The signal line is connected with the transmission line;
  • the light-emitting substrate further includes a first protection layer and a second protection layer, the signal line and the connection line are both located between the first protection layer and the substrate, and the first protection layer is provided with and A second via connected to the first via, and the second via exposes a part of the surface of the signal line;
  • the second protective layer is located on a side of the first transmission part away from the substrate, and a third via communicating with the first via is provided on the second protective layer, and the third via The hole exposes a part of the surface of the first transmission part;
  • the second transmission portion passes through the first via hole, the second via hole, and the third via hole, and is connected to the signal line and the first transmission portion.
  • the aperture of the end of the second via close to the substrate is smaller than the aperture of the end of the second via away from the substrate.
  • the aperture of the end of the third via close to the substrate is smaller than the aperture of the end of the third via away from the substrate.
  • the diameter of the second via hole gradually decreases.
  • the diameter of the third via hole gradually decreases.
  • the material of the second transmission part includes silver glue.
  • each of the transmission lines includes the first transmission part and the second transmission part.
  • the substrate has a plurality of side surfaces, the side surfaces are connected between the first surface and the second surface, and at least one of the transmission lines includes a third transmission portion, a fourth transmission portion, and The fifth transmission section, in which,
  • the third transmission part is located on the first surface of the substrate, and two ends of the third transmission part are respectively connected to the light emitting unit and the fourth transmission part;
  • the fourth transmission part is located on the side surface of the substrate
  • One end of the fifth transmission part is connected to the fourth transmission part, and the other end extends to the binding area, and at least a part of the fifth transmission part is located on the second surface of the substrate.
  • the fifth transmission section includes a first transmission subsection, a second transmission subsection, and a third transmission subsection that are sequentially connected,
  • the first transmission sub-portion is connected to the fourth transmission portion, the third transmission sub-portion is located in the binding area, and the second transmission sub-portion and the fourth transmission portion are respectively located on the substrate On two opposite sides.
  • both the second transmission sub-part and the fourth transmission part are made of conductive silver glue.
  • the light-emitting area is divided into a far-end light-emitting area and a near-end light-emitting area, the near-end light-emitting area is located between the far-end light-emitting area and the binding area, and the near-end light-emitting area
  • a plurality of the light-emitting units are provided in both the middle and the remote light-emitting area, and each transmission line connected to the light-emitting unit in the remote light-emitting area includes the third transmission part and the fourth transmission part And the fifth transmission department.
  • each transmission line connected to the light-emitting unit in the proximal light-emitting area is located on the first surface of the substrate.
  • a planarization layer is provided between the transmission line and the light-emitting unit, and both ends of the light-emitting unit are connected to the corresponding transmission line through a fourth via on the planarization layer.
  • the light-emitting unit further includes a connecting wire and a signal line located at both ends of the light-emitting unit, a plurality of light-emitting elements in the light-emitting unit are divided into at least one group, and each group includes For the multiple light-emitting elements between the two ends of the light-emitting unit, every two adjacent light-emitting elements in the same group are connected by the connecting line, and the first and last two light-emitting elements in the same group respectively pass corresponding signals
  • the line is connected with the transmission line;
  • the light-emitting element includes a light-emitting part and a pin connected to the light-emitting part;
  • the light-emitting substrate further includes a first protective layer, the connection line and the signal line are located between the first protective layer and the substrate, and the light-emitting portion is located on the first protective layer away from the substrate On one side, the pin of the light-emitting element passes through the first protective layer and is connected to the connection line or the signal line;
  • the light-emitting substrate further includes a second protective layer, and the second protective layer is located on a side of the fifth transmission part away from the first protective layer.
  • the light-emitting area includes a plurality of partitions, each of the partitions is provided with the light-emitting unit, and the plurality of light-emitting elements in the light-emitting unit are divided into multiple groups, and each group includes multiple groups connected in series. There are two light-emitting elements, and different groups of the light-emitting elements are connected in parallel.
  • the light emitting element is Micro-LED or Mini-LED.
  • a backlight source including the above-mentioned light-emitting substrate.
  • a display device including the above-mentioned backlight.
  • Figure 1 is a schematic diagram of a transmission line distribution on a light-emitting substrate
  • FIG. 2 is a schematic plan view of a light-emitting substrate provided in some embodiments of the present disclosure
  • Fig. 3 is an enlarged schematic diagram of the Q area in Fig. 1;
  • Figure 4 is a cross-sectional view taken along the line I-I' in Figure 3;
  • Figure 5 is a cross-sectional view taken along the line A-A' in Figure 3;
  • Fig. 6 is a schematic diagram of the second transmission part in Fig. 5 before being formed
  • FIG. 7 is another schematic diagram before the second transmission part in FIG. 5 is formed
  • Figure 8 is a cross-sectional view taken along the line B-B' in Figure 3;
  • FIG. 9 is a schematic diagram of a connection mode of a transmission line and a signal line provided in some embodiments of the present disclosure.
  • Fig. 10 is a schematic diagram of another connection mode of a transmission line and a signal line provided in some embodiments of the present disclosure.
  • Connected and other similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up”, “Down”, etc. are only used to indicate the relative position relationship. When the absolute position of the described object changes, the relative position relationship may also change accordingly.
  • first, second, etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, layers and/or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer and/or section from another element, component, region, layer and/or section. Therefore, without departing from the teaching of the present disclosure, the following elements, components, regions, layers and/or parts defined by “first” may be changed to be defined by "second”.
  • a light-emitting module with a light-emitting diode array the light-emitting diodes of the light-emitting module can be zoned and controlled, and the light-emitting diodes can be Mini LEDs or Micro LEDs.
  • Fig. 1 is a schematic diagram of a transmission line distribution on a light-emitting substrate. As shown in Fig. 1, the light-emitting substrate includes a plurality of partitions DA, and each partition DA is provided with a light-emitting diode. The flexible circuit board is bonded, and the other end extends to the partition DA.
  • the flexible circuit board provides the electrical signal (such as a high-level voltage signal or a low-level voltage signal) driving the chip to the transmission line TL, thereby using the transmission line TL to The electrical signal is transmitted to the light emitting diode.
  • the light-emitting diodes in the partition DA can also be connected by connecting wires, which will cause the wiring distribution on the light-emitting substrate to be more complicated. The overlapping position of the transmission line TL and the connecting wire will generate a large parasitic capacitance, which will affect the light-emitting diodes. Partition control.
  • the transmission line TL connected to the light-emitting diodes in the area DA at the a position will also pass through the light-emitting diodes at the b position.
  • the parasitic capacitance generated between these transmission lines TL and the connection line in the area DA at the b position will cause the light emitting diodes of the area DA at the b position to emit light by mistake.
  • the thickness of the insulating layer between the transmission line TL and the connection line needs to be set to be larger, which has high requirements on materials and processes.
  • FIG. 2 is a schematic plan view of the light-emitting substrate provided in some embodiments of the present disclosure.
  • FIG. 3 is an enlarged schematic view of the Q area in FIG. A cross-sectional view along the line I'.
  • FIG. 5 is a cross-sectional view along the line A-A' in FIG. 3.
  • the substrate 10 has a first surface S1 and a second surface S2 opposite to each other.
  • the substrate 10 includes a light-emitting area EA and a binding area BA located on one side of the light-emitting area EA.
  • the light-emitting unit 20 is arranged on the first surface S1 of the substrate 10 and is located in the light-emitting area EA.
  • the light-emitting unit 20 includes a plurality of light-emitting elements 21 connected together. Together; or, the multiple light-emitting elements 21 are divided into multiple groups, each group includes multiple light-emitting elements 21 connected in series, and the different groups are connected in parallel.
  • the two ends of the light-emitting unit 20 are respectively connected to the binding area BA through different transmission lines 30.
  • the transmission lines 30 connected to both ends of the light-emitting unit 20 are used to transmit high-level signals and low-level signals, respectively.
  • At least a part of at least one transmission line 30 is located on the second surface S2 of the substrate 10.
  • a part of one of the transmission lines 30 is disposed on the second surface S2, or one of the transmission lines 30 is disposed on the second surface S2 as a whole, or a part of each transmission line 30 of the plurality of transmission lines 30 is disposed on the second surface.
  • On S2, or, each transmission line 30 of the plurality of transmission lines 30 is arranged on the second surface S2 as a whole.
  • the first surface S1 of the substrate 10 is the surface of the substrate 10 facing the light emitting direction of the light emitting element 21, and the second surface S2 of the substrate 10 is the surface of the substrate 10 facing away from the light emitting direction of the light emitting element 21.
  • "disposed on the first surface S1 (or second surface S2)" can be directly disposed on the first surface S1 (or second surface S2), or indirectly disposed on the first surface S1 ( Or on the second side S2).
  • the substrate 10 is made of glass, or made of organic materials (for example, polyimide). In a specific embodiment of the present disclosure, the substrate 10 is a glass substrate 10. The thickness of the substrate 10 may be between 1 mm and 5 mm.
  • the light emitting unit 20 is located on the first surface S1 of the substrate 10, and at least a part of the at least one transmission line 30 is located on the second surface S2 of the substrate 10, so that the transmission line 30 on the second surface S2 and the light emitting unit
  • the connecting wires 22 in 20 can be insulated and separated by the substrate 10, and the thickness of the substrate 10 is often large, so that the parasitic capacitance between the transmission line 30 and the connecting wires 22 can be reduced, and the light-emitting unit 20 that should be turned off can be reduced or prevented. Turn-on phenomenon, and there is no need to add a thicker insulating layer between the light-emitting unit 20 and the transmission line 30, thereby reducing the requirements on the manufacturing process and materials.
  • the space on the second surface S2 side of the substrate 10 is relatively large.
  • the thickness and width of the transmission line 30 can be increased, thereby reducing the resistance of the transmission line 30. Improve signal transmission efficiency.
  • the light emitting element 21 is a Mini-LED or a Micro-LED (micro light emitting diode).
  • the light-emitting element 21 is a Mini-LED.
  • the light-emitting element 21 includes a light-emitting part 213 and pins 211 and 212 connected to the light-emitting part 213.
  • the pin 211 is an anode pin
  • the pin 212 is a cathode pin.
  • the light-emitting part 213 is a main body part of the light-emitting element 21 for emitting light.
  • the light-emitting unit 20 further includes a connecting wire 22 and a signal line 23 located at both ends of the light-emitting unit 20.
  • the multiple light-emitting elements 21 in the light-emitting unit 20 are divided into at least one group, and each group includes a series connection between the two ends of the light-emitting unit 20. For a plurality of light-emitting elements 21, every two adjacent light-emitting elements 21 in the same group are connected by a connecting line 21, and the first and last two light-emitting elements 21 in the same group are connected with a transmission line 30 by a corresponding signal line 23.
  • the signal line 23 at one end of the light-emitting unit 20 is a high-level signal line 23a, and the signal line 23 at the other end is a low-level signal line 23b.
  • the signal line 23a is connected
  • the pin 212 is connected to the pin 211 of the second light-emitting element 21 through the connecting line 22
  • the pin 212 of the second light-emitting element 21 is connected to the pin 211 of the third light-emitting element 21 through the connecting line 22.
  • Connection, and so on, the pin 212 of the last light-emitting element 21 is connected to the low-level signal line 23b. That is, when the light-emitting elements 21 in the light-emitting unit 20 are divided into multiple groups, the different groups are connected in parallel through the high-level signal line 23a and the low-level signal line 23b,
  • both the signal line 23 and the connection line 22 may be made of metal materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), copper (Cu), titanium ( Ti) and other metals.
  • both the signal line 23 and the connection line 22 may be a single-layer metal film layer, or may be a multi-layer metal film layer.
  • the signal line 23 and the connection line 22 can be arranged in the same layer, and the thickness of both can be about 4.5 ⁇ m.
  • the light-emitting area EA can be divided into a far-end light-emitting area EA1 and a near-end light-emitting area EA2.
  • the near-end light-emitting area EA2 is located between the far-end light-emitting area EA1 and the binding area BA.
  • the end light-emitting area EA1 includes multiple partitions DA.
  • the near-end light-emitting area EA2 and the far light-emitting area EA1 each include multiple rows and multiple columns of partitions DA, and the multiple partitions DA in each column are gradually approaching the binding area BA. arrangement.
  • the number of the partitions DA in the near-end light-emitting area EA2 and the far-end light-emitting area EA1 may be the same or different.
  • Each partition DA is provided with a light emitting unit 20.
  • the multiple light emitting elements 21 in the light emitting unit 20 can be divided into multiple groups, each group includes multiple light emitting elements 21 connected in series, and different groups of light emitting elements 21 are connected in parallel.
  • the high-level signal lines 23a of different partitions DA are independent of each other, and the low-level signal lines 23b of different partitions DA can be connected as a whole.
  • the low-level signal lines 23b of the light-emitting units 20 in the same row of partitions DA can be connected as One.
  • the light-emitting unit 20 of each zone DA includes 16 light-emitting elements 21.
  • the 16 light-emitting elements 21 are divided into two groups in parallel, and the 8 light-emitting elements 21 in each group are arranged in two columns and four rows. , 8 light-emitting elements 21 can be connected in series to form a bent structure.
  • the number of light-emitting elements 21 in each group is the same, and the light-emitting elements 21 in the same row of partitions DA are evenly distributed, and the interval between two adjacent groups can be set according to the size of the partition DA.
  • each partition DA is a rectangular area with a length and a width of about 4 mm.
  • the size of the partition DA can also be adjusted according to actual needs. It should be noted that FIG. 3 is only an exemplary illustration. In practical applications, the light-emitting elements 21 in the light-emitting unit 20 can also be divided into groups each including other numbers of light-emitting elements 21.
  • At least one transmission line 30 includes a first transmission portion 31 and a second transmission portion 32, the first transmission portion 31 is located on the second surface S2 of the substrate 10, and the first transmission portion 31 One end is connected to the second transmission portion 32, the other end of the first transmission portion 31 extends to the binding area BA, the second transmission portion 32 passes through the first via hole V1 on the substrate 10, and is connected to the first transmission portion 31 and the light emitting The unit 20 is connected.
  • the first via hole V1 may be formed by laser drilling.
  • the material of the second transmission portion 32 may be a conductive medium such as silver glue, which may be dripped into the first via hole V1 by dripping.
  • the first transmission part 31 may be made of a metal material, and the metal material may be molybdenum (Mo), aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), or the like.
  • the first transmission portion 31 may be a single metal film layer or a multilayer metal film.
  • the light-emitting substrate may further include a first protection layer PL1 and a second protection layer PL2, and the signal lines 23 and the connection lines 22 are located between the first protection layer PL1 and the substrate.
  • the second protective layer PL2 is located on the side of the first transmission portion 31 away from the substrate 10
  • the first protective layer PL1 is used to protect the signal line 23 and the connection line 22 on the side of the first surface S1 to prevent the first
  • the signal line 23 and the connection line 22 on the side S1 are corroded by external water vapor.
  • the second protective layer PL2 is used to protect the first transmission portion 31 on the side of the second surface S2 to prevent the first transmission portion 31 from being corroded by external water vapor.
  • the first protection layer PL1 and the second protection layer PL2 may be made of resin materials.
  • FIG. 6 is a schematic diagram before the second transmission part in FIG. 5 is formed
  • FIG. 7 is another schematic diagram before the second transmission part in FIG.
  • the second protection layer PL2 is located on the side of the first transmission part 31 away from the substrate 10, and the second protection layer PL2 is provided with a third via hole V3 communicating with the first via hole V1, and the third via hole V3 exposes the first via hole V3.
  • the second transmission portion 32 passes through the first via V1, the second via V2, and the third via V3, and is connected to the signal line 23 and the first transmission portion 31.
  • the signal line 23 connected to the second transmission portion 32 is divided into two conductive portions 231 and 232 at the second via hole V2, wherein the spacing between the two conductive portions 231 and 232 can be It is smaller than the aperture of the end of the second via hole V2 close to the substrate 10 so that the second transmission part 32 can contact the surfaces of the conductive parts 231 and 232 away from the substrate 10 and the side surfaces of the conductive parts 231 and 232.
  • the spacing between the conductive parts 231 and 232 is equal to the aperture of the end of the second via hole V2 close to the substrate 10.
  • the second transmission part 32 may be in contact with the side surfaces of the conductive parts 231 and 232.
  • the aperture of the end of the second via hole V2 close to the substrate 10 is smaller than the aperture of the end of the second via hole V2 away from the substrate 10, so that the second transmission portion 32 and the signal
  • the connection between the wires 23 is more reliable, and can reduce or prevent the problem of the conductive medium overflowing on the first protective layer PL1 when the second transmission part 32 is made.
  • the aperture of the second via hole V2 gradually decreases.
  • the diameter of the second via hole V2 decreases in a stepwise manner.
  • the second via V2 includes two sub-vias arranged coaxially, and the aperture of the sub-via away from the substrate 10 is larger than the aperture of the sub-via near the substrate 10.
  • the aperture of the end of the third via V3 close to the substrate 10 is smaller than the aperture of the end of the third via V3 away from the substrate 10, so that the connection between the second transmission portion 32 and the first transmission portion 31 is improved. It is reliable and can reduce or prevent the problem of uneven film layer caused by the conductive medium overflowing to the lower surface of the second protective layer PL2 when the second transmission portion 32 is fabricated.
  • the diameter of the third via hole V3 gradually decreases.
  • the diameter of the third via hole V3 decreases in a stepwise manner.
  • the third via V3 includes two sub-vias arranged coaxially, and the aperture of the sub-via away from the substrate 10 is larger than the aperture of the sub-via near the substrate 10.
  • the diameter of the end of the second via hole V2 close to the substrate 10 may be smaller than that of the second via hole V2 away from it.
  • the hole diameter of one end of the substrate 10, and at the same time, the hole diameter of the end of the third via hole V3 close to the substrate 10 is smaller than the hole diameter of the end of the third via hole V3 away from the substrate 10.
  • the apertures of the first via V1, the second via V2, and the third via V3 are all between 50 ⁇ m and 300 ⁇ m.
  • the embodiment of the present disclosure does not specifically limit the shapes of the first via V1, the second via V2, and the third via V3.
  • the first via V1, the second via V2, and the third via V3 are all horizontal.
  • FIG. 8 is a cross-sectional view along the line BB' in FIG. 3. As shown in FIG. 8, the second protective layer PL2 also exposes the portion 31a of the first transmission portion 31 located in the binding area BA to facilitate the first transmission The part 31a of the part 31 located in the binding area BA is bound to the flexible circuit board.
  • each transmission line 30 may be configured to include a first transmission portion 31 and a second transmission portion 32.
  • the bonding chip is connected to each transmission line 30 on the side of the second surface S2 of the substrate 10. Binding. In this case, the first transmission part 31 and the light-emitting unit 20 are separated by the substrate 10, and no other spacer layer is required.
  • FIG. 9 is a schematic diagram of a connection mode of a transmission line and a signal line provided in some embodiments of the present disclosure
  • FIG. 10 is a schematic diagram of another connection mode of a transmission line and a signal line provided in some embodiments of the disclosure.
  • the substrate 10 has a plurality of side surfaces S3, and the side surface S3 is connected between the first surface S1 and the second surface S2.
  • At least one transmission line 30 includes a third transmission portion 33 and a fourth transmission portion 33 and a fourth transmission portion connected in sequence. Section 34 and fifth transmission section 35.
  • the third transmission portion 33 is located on the first surface S1 of the substrate 10, one end of the third transmission portion 33 is connected to the light emitting unit 20, and the other end is connected to the fourth transmission portion 34.
  • the connection between the third transmission portion 33 and the light-emitting unit 20 is specifically that the third transmission portion 33 is connected with the signal line 23 of the light-emitting unit 20.
  • One end of the fourth transmission part 34 is connected to the third transmission part 33, and the other end is connected to the fifth transmission part 35, and the fourth transmission part 34 is located on the side surface S3 of the substrate 10.
  • One end of the fifth transmission part 35 is connected to the fourth transmission part 34, and the other end extends to the binding area BA, thereby being bound to the flexible circuit board. At least a part of the fifth transmission portion 35 is located on the second surface S2.
  • the fifth transmission part 35 includes a first transmission sub-part 351, a second transmission sub-part 352, and a third transmission sub-part 353 which are sequentially connected.
  • the first transmission sub-section 351 and the fourth transmission section 34 are connected.
  • the third transmission sub-part 353 is located in the binding area BA and is used for binding with the flexible circuit board.
  • the second transmission sub-portion 352 and the fourth transmission portion 34 are respectively located on two opposite side surfaces S3 of the substrate 10.
  • the second transmission sub-portion 352 is located on the side surface S3 close to the binding area BA and substantially parallel to the extension direction of the binding area BA
  • the third transmission portion 33 is located far away from the binding area BA and close to the binding area BA.
  • the extending direction is substantially parallel to the side surface S3.
  • the extending direction of the binding area BA is perpendicular to the arrangement direction of the light-emitting area EA and the binding area BA.
  • the materials of the second transmission sub-part 352 and the fourth transmission part 34 both include conductive silver glue.
  • the transmission line 30 connected to the light-emitting unit 20 of the remote light-emitting area EA1 may adopt a structure having a third transmission portion 33, a fourth transmission portion 34, and a fifth transmission portion 35.
  • the number of partitions DA in the far-end light-emitting area EA1 is greater than or equal to the number of partitions DA in the near-end light-emitting area EA2.
  • at least half of the transmission lines 30 in the light-emitting substrate include the third transmission portion 33. , The fourth transmission part 34 and the fifth transmission part 35.
  • the transmission line 30 connected to the proximal light emitting area EA2 may be located on the first surface S1 of the substrate 10 (as shown in FIG. 10).
  • the transmission line 30 connected to the near-end light-emitting area EA2 and the third transmission portion 33 are arranged in the same layer.
  • the transmission line 30 connected to the near-end light-emitting area EA2 may also adopt a structure having a third transmission portion 33, a fourth transmission portion 34, and a fifth transmission portion 35.
  • a planarization layer PLN is provided between the transmission line 30 and the light-emitting unit 20.
  • the planarization layer PLN exposes the portion of the transmission line 30 in the bonding area BA to facilitate the transmission line 30 and the driving chip. Binding. Both ends of the light emitting unit 20 are connected to the corresponding transmission line 30 through the fourth via hole V4 on the planarization layer PLN.
  • the planarization layer PLN may be made of organic materials such as resin, and the surface of the planarization layer PLN facing away from the substrate 10 is substantially flat.
  • the light-emitting substrate further includes a first protective layer PL1 and a second protective layer PL2.
  • the connecting line 22 and the signal line 23 are located between the first protective layer PL1 and the substrate 10, and the connecting line 22 and the signal line 23 are located between the first protective layer PL1 and the planarization layer PLN, and the light emitting part 213 of the light emitting element 21 is located
  • the pins 211 and 212 of the light emitting element 21 pass through the first protection layer PL1 and are connected to the connection line 22 or the signal line 23.
  • the second protective layer PL2 is located on the side of the fifth transmission part 35 away from the first protective layer PL1.
  • the first protection layer PL1 protects the connection line 22 and the signal line 23, and the second protection layer PL2 protects the part of the transmission line 30 located on the second surface S2.
  • each transmission line 30 can be set according to the setting method in FIG. 5, or a part of the transmission line 30 may be set according to the setting method in FIG.
  • the setting method is set.
  • a part of the transmission line 30 can also be arranged according to the arrangement in FIG. 5 to include the first transmission portion 31 and the second transmission portion 32; 9 is set up to have a third transmission portion 33, a fourth transmission portion 34, and a fifth transmission portion 35.
  • the flexible circuit board needs to be connected to a part of the transmission line from the second surface S2 side of the substrate 10 30 performs binding, and binds to another part of the transmission line 30 from the side of the first surface S1 of the substrate 10.
  • a reflective layer may be further provided on the side of the first protective layer PL1 away from the substrate 10, and the reflective layer is provided with through holes corresponding to the light emitting elements 21 one-to-one.
  • the reflective layer can reflect the light of the light-emitting element 21, thereby improving the utilization rate of light.
  • an indium tin oxide (ITO) film layer corresponding to the transmission line 30 may be provided in the bonding area BA, and the part of the transmission line 30 located in the bonding area BA is covered by the indium tin oxide film layer. To prevent the metal transmission line 30 from being corroded by external water vapor.
  • Alignment marks can also be provided on the substrate 10, and when the patterning process is used to form each layer structure, the position of the mask can be adjusted with reference to the alignment marks.
  • the light-emitting substrate of the embodiments of the present disclosure can be used as a backlight lamp panel, and all the light-emitting units in the light-emitting substrate can emit light of the same color, such as blue light.
  • it can be a passive display panel (such as The liquid crystal display panel) provides backlight; or each light-emitting unit in the light-emitting substrate of the embodiment of the present disclosure can be used as a pixel.
  • the light-emitting substrate includes a red light-emitting unit, a blue light-emitting unit, and a green light-emitting unit, and the light-emitting units of different colors cooperate with each other , So as to be able to achieve color display.
  • the embodiments of the present disclosure also provide a backlight source, and the backlight source includes the light-emitting substrate provided in any of the foregoing embodiments.
  • the backlight source may also include a driving chip and a flexible circuit board, the driving chip is electrically connected to the flexible circuit board, and the flexible circuit board is bonded and connected to the part of the transmission line in the light-emitting substrate that is located in the bonding area BA, so as to provide the driver chip The electric signal is provided to the light emitting element 21.
  • At least a part of the at least one transmission line 30 is located on the second surface S2 of the substrate 10, so that the parasitic capacitance between the transmission line 30 and the connection line 22 in the light-emitting unit 20 can be reduced, and the light emission can be controlled in the zone.
  • the light-emitting element 21 should be turned off, the light-emitting element 21 that should be turned off is prevented from illuminating by mistake.
  • the embodiments of the present disclosure also provide a display device, which includes the backlight source in the above-mentioned embodiments.
  • the display device may further include a liquid crystal display panel, which is located on the light exit side of the backlight source, so that the backlight source can be used as the backlight source of the liquid crystal display panel to provide backlight for the liquid crystal display panel.
  • the display device may be any product or component with a display function, such as a liquid crystal display, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator, and the like.
  • At least a part of the at least one transmission line 30 is located on the second surface S2 of the substrate 10, so that the parasitic capacitance between the transmission line 30 and the connection line 22 in the light-emitting unit 20 can be reduced, and the light emission can be controlled in the zone.
  • the display effect of the display device is improved.

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Abstract

本公开提供一种发光基板、一种背光源和一种显示装置,所述发光基板包括:具有相对的第一面和第二面的基板,所述基板包括发光区和位于所述发光区一侧的绑定区;设置在所述基板的第一面上且位于所述发光区的发光单元,所述发光单元包括连接在一起的多个发光件;设置在所述基板上的传输线,其中,至少一条所述传输线的至少一部分位于所述基板的第二面上,以及所述发光单元的两端分别通过不同的所述传输线连接至所述绑定区。

Description

发光基板、背光源和显示装置
相关申请的交叉引用
本申请要求于2020年3月24日提交的中国专利申请NO.202020380907.6的优先权,该中国专利申请的内容通过引用的方式整体合并于此。
技术领域
本公开涉及显示技术领域,具体涉及发光基板、背光源和显示装置。
背景技术
Mini-LED(迷你发光二极管)发光模组可以作为背光模组用于液晶显示装置中,从而提高显示对比度。在Mini-LED发光模组中,可以对Mini-LED进行分区控制。但是,在Mini-LED发光模组中,容易出现原本应当关闭的分区中的Mini-LED仍然被点亮的问题。
发明内容
本公开实施例提供一种发光基板、一种背光源和一种显示装置。
作为本公开的一方面,提供一种发光基板,包括:
具有相对的第一面和第二面的基板,所述基板包括发光区和位于所述发光区一侧的绑定区;
设置在所述基板的第一面上且位于所述发光区的发光单元,所述发光单元包括连接在一起的多个发光件;
设置在所述基板上的传输线,其中,
至少一条所述传输线的至少一部分位于所述基板的第二面上,以及
所述发光单元的两端分别通过不同的所述传输线连接至所述绑 定区。
在一些实施例中,至少一条所述传输线包括第一传输部和第二传输部,所述第一传输部位于所述基板的第二面上,所述第一传输部的一端与所述第二传输部连接,所述第一传输部的另一端延伸至所述绑定区,所述第二传输部穿过所述基板上的第一过孔,并与所述第一传输部和所述发光单元连接。
在一些实施例中,所述发光单元还包括:连接线、以及位于所述发光单元两端的信号线,所述发光单元中的多个发光件被分为至少一组,每组包括串联在所述发光单元两端之间的多个所述发光件,同一组中的每相邻两个所述发光件通过所述连接线连接,同一组中的首尾两个所述发光件分别通过相应的信号线与所述传输线连接;
所述发光基板还包括第一保护层和第二保护层,所述信号线和所述连接线均位于所述第一保护层与所述基板之间,所述第一保护层上设置有与所述第一过孔连通的第二过孔,所述第二过孔暴露出所述信号线的一部分表面;
所述第二保护层位于所述第一传输部的远离所述基板的一侧,所述第二保护层上设置有与所述第一过孔连通的第三过孔,所述第三过孔暴露出所述第一传输部的一部分表面;
所述第二传输部穿过所述第一过孔、所述第二过孔和所述第三过孔,并与所述信号线和所述第一传输部连接。
在一些实施例中,所述第二过孔靠近所述基板的一端的孔径小于所述第二过孔远离所述基板的一端的孔径。
在一些实施例中,所述第三过孔靠近所述基板的一端的孔径小于所述第三过孔远离所述基板的一端的孔径。
在一些实施例中,沿靠近所述基板的方向,所述第二过孔的孔径逐渐减小。
在一些实施例中,沿靠近所述基板的方向,所述第三过孔的孔径逐渐减小。
在一些实施例中,所述第二传输部的材料包括银胶。
在一些实施例中,每条所述传输线均包括所述第一传输部和所 述第二传输部。
在一些实施例中,所述基板具有多个侧面,所述侧面连接在所述第一面与第二面之间,至少一条所述传输线包括依次连接的第三传输部、第四传输部和第五传输部,其中,
所述第三传输部位于所述基板的第一面上,所述第三传输部的两端分别与所述发光单元和所述第四传输部连接;
所述第四传输部位于所述基板的侧面上;
所述第五传输部的一端与所述第四传输部连接,另一端延伸至所述绑定区,所述第五传输部的至少一部分位于所述基板的第二面上。
在一些实施例中,所述第五传输部包括依次连接的第一传输子部、第二传输子部和第三传输子部,
所述第一传输子部与所述第四传输部连接,所述第三传输子部位于所述绑定区,所述第二传输子部和所述第四传输部分别位于所述基板的两个相对的侧面上。
在一些实施例中,所述第二传输子部和所述第四传输部的制作材料均包括导电银胶。
在一些实施例中,所述发光区划分为远端发光区和近端发光区,所述近端发光区位于所述远端发光区与所述绑定区之间,所述近端发光区中和所述远端发光区中均设置有多个所述发光单元,所述远端发光区中的所述发光单元所连接的各条传输线均包括所述第三传输部、第四传输部和第五传输部。
在一些实施例中,所述近端发光区中的所述发光单元所连接的各条传输线均位于所述基板的第一面上。
在一些实施例中,所述传输线与所述发光单元之间设置有平坦化层,所述发光单元的两端均通过所述平坦化层上的第四过孔与相应的所述传输线连接。
在一些实施例中,所述发光单元还包括连接线、以及位于所述发光单元两端的信号线,所述发光单元中的多个发光件被分为至少一组,每组包括串联在所述发光单元两端之间的多个所述发光件,同一组中的每相邻两个所述发光件通过所述连接线连接,同一组中的首尾 两个所述发光件分别通过相应的信号线与所述传输线连接;所述发光件包括发光部和与所述发光部连接的引脚;
所述发光基板还包括第一保护层,所述连接线和所述信号线位于所述第一保护层与所述基板之间,所述发光部位于所述第一保护层的远离所述基板的一侧,所述发光件的引脚穿过所述第一保护层并与所述连接线或信号线连接;
所述发光基板还包括第二保护层,所述第二保护层位于所述第五传输部的远离所述第一保护层的一侧。
在一些实施例中,所述发光区包括多个分区,每个所述分区中设置有所述发光单元,所述发光单元中的多个发光件被分为多组,每组包括串联的多个所述发光件,不同组的所述发光件并联。
在一些实施例中,所述发光件为Micro-LED或Mini-LED。
作为本公开的第二方面,提供一种背光源,包括上述发光基板。
作为本公开的第三方面,提供一种显示装置,包括上述背光源。
附图说明
附图是用来提供对本公开的进一步理解,并且构成说明书的一部分,与下面的具体实施方式一起用于解释本公开,但并不构成对本公开的限制。在附图中:
图1为一种发光基板上的传输线分布示意图;
图2为本公开的一些实施例中提供的发光基板的平面示意图;
图3为图1中的Q区域的放大示意图;
图4为沿图3中I-I'线的剖视图;
图5为沿图3中A-A'线的剖视图;
图6为图5中的第二传输部形成之前的示意图;
图7为图5中的第二传输部形成之前的另一示意图;
图8为沿图3中B-B'线的剖视图;
图9为本公开的一些实施例中提供的传输线与信号线的一种连接方式示意图;
图10为本公开的一些实施例中提供的传输线与信号线的另一种 连接方式示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本公开保护的范围。
除非另作定义,此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。同样,“一个”或者“一”等类似词语也不表示数量限制,而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现在“包括”或者“包含”前面的元件或者物件涵盖出现在“包括”或者“包含”后面列举的元件或者物件及其等同,并不排除其他元件或者物件。“连接”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则所述相对位置关系也可能相应地改变。
在下面的描述中,当元件或层被称作“在”另一元件或层“上”或“连接”另一元件或层时,该元件或层可以直接在所述另一元件或层上、或直接连接到所述另一元件或层,或者可以存在中间元件或中间层。然而,当元件或层被称作“直接”在另一元件或层“上”、或“直接”连接另一元件或层时,不存在中间元件或中间层。术语“和/或”表示相关列出项的任意一个或多个的组合。
虽然在这里可使用术语第一、第二等来描述各种元件、组件、区域、层和/或部分,但是这些元件、组件、区域、层和/或部分不应该受这些术语限制。这些术语用来将一个元件、组件、区域、层和/ 或部分与另一个元件、组件、区域、层和/或部分区分开。因此,在不脱离本公开的教导的情况下,下面由“第一”限定的元件、组件、区域、层和/或部分可改变为由“第二”限定。
在具有发光二极管阵列的发光模组中,可以对发光模组的发光二极管进行分区控制,发光二极管可以为Mini LED或Micro LED(微发光二极管)。图1为一种发光基板上的传输线分布示意图,如图1所示,发光基板包括多个分区DA,每个分区DA中设置有发光二极管,传输线TL的一端延伸至绑定区BA,从而与柔性线路板绑定(bonding),另一端延伸至分区DA,柔性线路板将驱动芯片的电信号(如,高电平电压信号或低电平电压信号)提供给传输线TL,从而利用传输线TL将电信号传输至发光二极管。另外,分区DA中的发光二极管还可以通过连接线连接,这样将导致发光基板上的走线分布较为复杂,传输线TL与连接线交叠的位置会产生较大的寄生电容,从而影响对发光二极管的分区控制。例如,当控制a位置的分区DA中的发光二极管关闭、并控制b位置的分区DA中的发光二极管开启时,由于a位置的分区DA中的发光二极管所连接的传输线TL也会经过b位置的分区DA,这些传输线TL与b位置的分区DA中的连接线之间产生的寄生电容将导致b位置的分区DA的发光二极管误发光。而如果要减小寄生电容,则需要将传输线TL与连接线之间的绝缘层的厚度设置的较大,这对材料和工艺的要求很高。
本公开实施例提供一种发光基板,图2为本公开的一些实施例中提供的发光基板的平面示意图,图3为图2中的Q区域的放大示意图,图4为沿图3中I-I'线的剖视图,图5为沿图3中A-A'线的剖视图,结合图1至图5所示,本公开实施例的发光基板包括:基板10、传输线30和发光单元20,传输线30和发光单元20均设置在基板10上。基板10具有相对的第一面S1和第二面S2。基板10包括发光区EA和位于发光区EA一侧的绑定区BA。发光单元20设置在基板10的第一面S1上且位于发光区EA,发光单元20包括连接在一起的多个发光件21,发光单元20中的多个发光件21可以通过连接线22串联在一起;或者,多个发光件21分为多组,每一组包括串联的 多个发光件21,不同组之间进行并联。发光单元20的两端分别通过不同的传输线30连接至绑定区BA。例如,发光单元20的两端所连接的传输线30分别用于传输高电平信号和低电平信号。
至少一条传输线30的至少一部分位于基板10的第二面S2上。例如,其中一条传输线30的一部分设置在第二面S2上,或者,其中一条传输线30整体设置在第二面S2上,或者,多条传输线30中的每条传输线30的一部分设置在第二面S2上,或者,多条传输线30中的每条传输线30整体均设置在第二面S2上。其中,基板10的第一面S1为基板10朝向发光件21出光方向的表面,基板10的第二面S2为基板10背向发光件21的出光方向的表面。本公开实施例中的“设置在第一面S1(或第二面S2)上”可以为直接设置在第一面S1(或第二面S2)上,也可以间接设置在第一面S1(或第二面S2)上。
在一些实施例中,基板10采用玻璃制成,或者采用有机材料(例如聚酰亚胺)制成。在本公开的一种具体实施例中,基板10为玻璃基板10。基板10的厚度可以在1mm至5mm之间。
在本公开实施例中,发光单元20位于基板10的第一面S1上,至少一条传输线30的至少一部分位于基板10的第二面S2上,从而使第二面S2上的传输线30与发光单元20中的连接线22可以通过基板10绝缘间隔,而基板10的厚度往往较大,从而可以减小传输线30与连接线22之间的寄生电容,减少或防止应当被关闭的发光单元20的误开启现象,并且,无需在发光单元20与传输线30之间额外增加较厚的绝缘层,从而降低了对制作工艺和材料的要求。另外,基板10的第二面S2一侧的空间较大,将传输线30的至少一部分设置在第二面S2一侧时,可以增大传输线30的厚度和宽度,从而减小传输线30的电阻,提高信号传输效率。
在本公开实施例中,发光件21为Mini-LED或Micro-LED(微发光二极管)。作为本公开的一种具体应用,发光件21为Mini-LED。结合图3至图5所示,发光件21包括发光部213和与发光部213连接的引脚211和212,例如,引脚211为阳极引脚,引脚212为阴极引脚。发光部213为发光件21用于发光的主体部分。发光单元20 还包括连接线22、以及位于发光单元20两端的信号线23,发光单元20中的多个发光件21被分为至少一组,每组包括串联在发光单元20两端之间的多个发光件21,同一组中的每相邻两个发光件21通过连接线21连接,同一组中的首尾两个发光件21通过相应的信号线23与传输线30连接。例如,发光单元20一端的信号线23为高电平信号线23a,另一端的信号线23为低电平信号线23b,每一组中的首个发光件21的引脚211与高电平信号线23a连接,引脚212通过连接线22与第二个发光件21的引脚211连接,第二个发光件21的引脚212通过连接线22与第三个发光件21的引脚211连接,以此类推,最后一个发光件21的引脚212与低电平信号线23b连接。即,当发光单元20中的发光件21被分为多组时,不同的组通过高电平信号线23a和低电平信号线23b并联,
在本公开实施例中,信号线23以及连接线22均可以采用金属材料制成,该金属材料可以为诸如钼(Mo)、铝(Al)、铬(Cr)、铜(Cu)、钛(Ti)等的金属。另外,信号线23以及连接线22均可以为单层金属膜层,也可以为多层金属薄膜。信号线23和连接线22可以同层设置,二者厚度均可以在4.5μm左右。
在本公开实施中,发光区EA可划分为远端发光区EA1和近端发光区EA2,近端发光区EA2位于远端发光区EA1与绑定区BA之间,近端发光区EA2和远端发光区EA1均包括多个分区DA,例如,近端发光区EA2和远端发光区EA1均包括多行多列分区DA,每一列中的多个分区DA沿逐渐靠近绑定区BA的方向排列。近端发光区EA2和远端发光区EA1中的分区DA的数量可以相同,也可以不同。每个分区DA中均设置有发光单元20,发光单元20中的多个发光件21可被分为多组,每组包括串联的多个发光件21,不同组的发光件21并联。
不同分区DA的高电平信号线23a相互独立,而不同分区DA的低电平信号线23b可以连接为一体,例如,同一行分区DA中的发光单元20的低电平信号线23b可连接为一体。
例如,如图3所示,每个分区DA的发光单元20包括16个发光件21,16个发光件21分为并联的两组,每组中的8个发光件21排 成两列四行,8个发光件21可串联为弯折结构。每组中的发光件21的数量相同,同一行分区DA中的发光件21均匀分布,相邻两个组之间的间隔可以根据分区DA的大小进行设置。在一具体示例中,每个分区DA为长度和宽度均在4mm左右的矩形区域。当然,也可以根据实际需要对分区DA的大小进行调整。需要说明的是,图3仅为示例性说明,在实际应用中,也可以将发光单元20中的发光件21分为每组包括其他数量的发光件21的各组。
在一些实施例中,如图5所示,至少一条传输线30包括第一传输部31和第二传输部32,第一传输部31位于基板10的第二面S2上,第一传输部31的一端与第二传输部32连接,第一传输部31的另一端延伸至绑定区BA,第二传输部32穿过基板10上的第一过孔V1,并与第一传输部31和发光单元20连接。
第一过孔V1可以通过激光打孔的方式形成。第二传输部32的制作材料可以为银胶等导电介质,其可以通过滴注的方式滴注在第一过孔V1中。第一传输部31可以采用金属材料制成,该金属材料可以为钼(Mo)、铝(Al)、铬(Cr)、铜(Cu)、钛(Ti)等。另外,第一传输部31可以为单层金属膜层,也可以为多层金属薄膜。
在一些实施例中,如图4和图5所示,所述发光基板还可以包括第一保护层PL1和第二保护层PL2,信号线23和连接线22均位于第一保护层PL1与基板10之间,第二保护层PL2位于第一传输部31的远离基板10的一侧,第一保护层PL1用于对第一面S1一侧的信号线23和连接线22进行保护,防止第一面S1一侧的信号线23和连接线22受到外界水汽的侵蚀。第二保护层PL2用于对第二面S2一侧的第一传输部31进行保护,防止第一传输部31受到外界水汽的侵蚀。第一保护层PL1和第二保护层PL2可以采用树脂材料制成。
图6为图5中的第二传输部形成之前的示意图,图7为图5中的第二传输部形成之前的另一示意图,结合图5至图7所示,第一保护层PL1上设置有与第一过孔V1连通的第二过孔V2,第二过孔V2暴露出信号线23的一部分表面。第二保护层PL2位于第一传输部31的远离基板10的一侧,第二保护层PL2上设置有与第一过孔V1连通 的第三过孔V3,第三过孔V3暴露出第一传输部31的一部分表面。第二传输部32穿过第一过孔V1、第二过孔V2和第三过孔V3,并与信号线23和第一传输部31连接。
如图6所示,与第二传输部32连接的信号线23在第二过孔V2处被分为两个导电部分231和232,其中,该两个导电部分231和232之间的间距可以小于第二过孔V2靠近基板10的一端的孔径,从而使得第二传输部32可以与导电部分231和232的远离基板10的表面、导电部分231和232的侧面接触。或者,导电部分231和232之间的间距等于第二过孔V2靠近基板10的一端的孔径,该情况下,第二传输部32可以与导电部分231和232的侧面接触。
在一些实施例中,如图6和图7所示,第二过孔V2靠近基板10的一端的孔径小于第二过孔V2远离基板10的一端的孔径,从而使第二传输部32与信号线23之间的连接更牢靠,并且,可以减少或防止在制作第二传输部32时,导电介质溢到第一保护层PL1上而产生膜层不均的问题。例如,如图7所示,沿靠近基板10的方向,第二过孔V2的孔径逐渐减小。或者,如图6所示,沿靠近基板10的方向,第二过孔V2的孔径呈阶梯式减小。例如,第二过孔V2包括同轴设置的两个子过孔,远离基板10的子过孔的孔径大于靠近基板10的子过孔的孔径。
在一些实施例中,第三过孔V3靠近基板10的一端的孔径小于第三过孔V3远离基板10的一端的孔径,从而使第二传输部32与第一传输部31之间的连接更牢靠,并且,可以减少或防止在制作第二传输部32时,导电介质溢到第二保护层PL2的下表面而产生膜层不均的问题。例如,如图7所示,沿靠近基板10的方向,第三过孔V3的孔径逐渐减小。或者,如图6所示,沿靠近基板10的方向,第三过孔V3的孔径呈阶梯式减小。例如,第三过孔V3包括同轴设置的两个子过孔,远离基板10的子过孔的孔径大于靠近基板10的子过孔的孔径。
为了使第二传输部32与第一传输部31、信号线23之间的连接可靠,在一些实施例中,可以使第二过孔V2靠近基板10的一端的孔 径小于第二过孔V2远离基板10的一端的孔径,同时,使第三过孔V3靠近基板10的一端的孔径小于第三过孔V3远离基板10的一端的孔径。
示例性地,第一过孔V1、第二过孔V2和第三过孔V3的孔径均在50μm至300μm之间。本公开实施例对第一过孔V1、第二过孔V2和第三过孔V3的形状不作具体限定,例如,第一过孔V1、第二过孔V2和第三过孔V3均为横截面呈圆形的过孔、或者横截面为矩形的过孔。
图8为沿图3中B-B'线的剖视图,如图8所示,第二保护层PL2还将第一传输部31的位于绑定区BA的部分31a暴露出,以便于第一传输部31位于绑定区BA中的部分31a与柔性线路板进行绑定。
在一些实施例中,每条传输线30均可以设置为包括第一传输部31和第二传输部32的结构,此时,绑定芯片在基板10的第二面S2一侧与每条传输线30绑定。这种情况下,第一传输部31与发光单元20之间通过基板10间隔开,无需再设置其他间隔层。
图9为本公开的一些实施例中提供的传输线与信号线的一种连接方式示意图,图10为本公开的一些实施例中提供的传输线与信号线的另一种连接方式示意图。如图9和图10所示,基板10具有多个侧面S3,侧面S3连接在第一面S1与第二面S2之间,至少一条传输线30包括依次连接的第三传输部33、第四传输部34和第五传输部35。第三传输部33位于基板10的第一面S1上,第三传输部33的一端与发光单元20连接,另一端与第四传输部34连接。第三传输部33与发光单元20连接具体为,第三传输部33与发光单元20的信号线23连接。第四传输部34的一端与第三传输部33连接,另一端与第五传输部35连接,第四传输部34位于基板10的侧面S3上。第五传输部35的一端与第四传输部34连接,另一端延伸至绑定区BA,从而与柔性线路板绑定。第五传输部35的至少一部分位于第二面S2上。
进一步地,第五传输部35包括依次连接的第一传输子部351、第二传输子部352和第三传输子部353。第一传输子部351与第四传 输部34连接。第三传输子部353位于绑定区BA,用于与柔性线路板绑定。第二传输子部352和第四传输部34分别位于基板10的两个相对的侧面S3上。例如,第二传输子部352位于靠近绑定区BA、且与绑定区BA的延伸方向大致平行的侧面S3上,第三传输部33位于远离绑定区BA、且与绑定区BA的延伸方向大致平行的侧面S3上。绑定区BA的延伸方向垂直于发光区EA与绑定区BA的排列方向。
例如,第二传输子部352和第四传输部34的制作材料均包括导电银胶。
在本公开的另一些实施例中,远端发光区EA1的发光单元20所连接的传输线30可以采用具有第三传输部33、第四传输部34和第五传输部35的结构。在一些具体示例中,远端发光区EA1中的分区DA的数量大于或等于近端发光区EA2中的分区DA的数量,此时,发光基板中至少一半数量的传输线30包括第三传输部33、第四传输部34和第五传输部35。
近端发光区EA2所连接的传输线30可以位于基板10的第一面S1上(如图10所示)。例如,近端发光区EA2所连接的传输线30与第三传输部33同层设置。当然,近端发光区EA2所连接的传输线30也可以采用具有第三传输部33、第四传输部34和第五传输部35的结构。
如图9和图10所示,传输线30与发光单元20之间设置有平坦化层PLN,该平坦化层PLN将传输线30位于绑定区BA的部分暴露出,以便于传输线30与驱动芯片进行绑定。发光单元20的两端均通过平坦化层PLN上的第四过孔V4与相应的传输线30连接。
例如,平坦化层PLN可以采用树脂等有机材料制成,平坦化层PLN的背离基板10的表面基本平坦。
如图9和图10所示,所述发光基板还包括第一保护层PL1和第二保护层PL2。连接线22和信号线23位于第一保护层PL1与基板10之间,并且,连接线22和信号线23位于第一保护层PL1与平坦化层PLN之间,发光件21的发光部213位于第一保护层PL1的远离基板10的一侧,发光件21的引脚211和212穿过第一保护层PL1并与连 接线22或信号线23连接。第二保护层PL2位于第五传输部35的远离第一保护层PL1的一侧。第一保护层PL1对连接线22、信号线23起到保护作用,第二保护层PL2对传输线30位于第二面S2的部分进行保护。
在本公开的上述实施例中,可以使每条传输线30按照图5中的设置方式进行设置,或者,将一部分传输线30按照图9中的设置方式进行设置,将另一部分传输线30按照图10中的设置方式进行设置。但是本公开实施例不局限于此,例如,还可以将一部分传输线30按照图5中的设置方式进行设置,使其包括第一传输部31和第二传输部32;而将另一部分传输线30按照图9中的设置方式进行设置,使其具有第三传输部33、第四传输部34和第五传输部35,此时,柔性线路板需要从基板10的第二面S2一侧与一部分传输线30进行绑定,并从基板10的第一面S1一侧与另一部分传输线30进行绑定。
在本公开实施例中,第一保护层PL1的远离基板10的一侧还可以设置反射层,该反射层上设置有与发光件21一一对应的通孔,发光件21从相应的通孔中露出,反射层可以将发光件21的光线进行反射,从而提高光线利用率。另外,在本公开实施例中,绑定区BA中还可以设置与传输线30一一对应的氧化铟锡(ITO)膜层,传输线30位于绑定区BA的部分被氧化铟锡膜层覆盖,以防止金属的传输线30被外界水汽侵蚀。基板10上还可以设置对位标记,在利用构图工艺来形成各层结构时,可以参照对位标记调整掩膜板的位置。
应当理解,本公开实施例的发光基板可以作为背光源灯板,发光基板中的所有发光单元均能够出射相同颜色的光,例如为蓝光,通过配合光转换层,从而能够为被动式显示面板(例如液晶显示面板)提供背光;或者本公开实施例的发光基板中的每个发光单元可以作为一个像素,发光基板中包括红色发光单元、蓝色发光单元以及绿色发光单元,不同颜色的发光单元相互配合,从而能够实现彩色显示。
本公开实施例还提供一种背光源,所述背光源包括上述任意实施例提供的发光基板。
所述背光源还可以包括驱动芯片和柔性线路板,驱动芯片与柔 性线路板电连接,柔性线路板与发光基板中传输线的位于绑定区BA的部分进行绑定连接,从而将驱动芯片提供的电信号提供给发光件21。
在本公开实施例中,至少一条传输线30的至少一部分位于基板10的第二面S2上,从而可以减小传输线30与发光单元20中的连接线22之间的寄生电容,进而在分区控制发光件21时,防止原本应该关闭的发光件21出现误发光现象。
本公开实施例还提供一种显示装置,其包括上述实施例中的背光源。
所述显示装置还可以包括液晶显示面板,其位于背光源的出光侧,从而所述背光源可以作为所述液晶显示面板的背光源,用于为所述液晶显示面板提供背光。所述显示装置可以为液晶显示器、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等具有显示功能的任何产品或部件。
在本公开实施例中,至少一条传输线30的至少一部分位于基板10的第二面S2上,从而可以减小传输线30与发光单元20中的连接线22之间的寄生电容,进而在分区控制发光件21时,防止原本应该关闭的发光件21出现误发光现象,从而改善显示装置的显示效果。
可以理解的是,以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式,然而本公开并不局限于此。对于本领域内的普通技术人员而言,在不脱离本公开的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为落入本公开的保护范围。

Claims (20)

  1. 一种发光基板,包括:
    具有相对的第一面和第二面的基板,所述基板包括发光区和位于所述发光区一侧的绑定区;
    设置在所述基板的第一面上且位于所述发光区的发光单元,所述发光单元包括连接在一起的多个发光件;
    设置在所述基板上的传输线,其中,
    至少一条所述传输线的至少一部分位于所述基板的第二面上,以及
    所述发光单元的两端分别通过不同的所述传输线连接至所述绑定区。
  2. 根据权利要求1所述的发光基板,其中,至少一条所述传输线包括第一传输部和第二传输部,所述第一传输部位于所述基板的第二面上,所述第一传输部的一端与所述第二传输部连接,所述第一传输部的另一端延伸至所述绑定区,所述第二传输部穿过所述基板上的第一过孔,并与所述第一传输部和所述发光单元连接。
  3. 根据权利要求2所述的发光基板,其中,所述发光单元还包括:连接线、以及位于所述发光单元两端的信号线,所述发光单元中的多个发光件被分为至少一组,每组包括串联在所述发光单元两端之间的多个所述发光件,同一组中的每相邻两个所述发光件通过所述连接线连接,同一组中的首尾两个所述发光件分别通过相应的信号线与所述传输线连接;
    所述发光基板还包括第一保护层和第二保护层,所述信号线和所述连接线均位于所述第一保护层与所述基板之间,所述第一保护层上设置有与所述第一过孔连通的第二过孔,所述第二过孔暴露出所述信号线的一部分表面;
    所述第二保护层位于所述第一传输部的远离所述基板的一侧, 所述第二保护层上设置有与所述第一过孔连通的第三过孔,所述第三过孔暴露出所述第一传输部的一部分表面;
    所述第二传输部穿过所述第一过孔、所述第二过孔和所述第三过孔,并与所述信号线和所述第一传输部连接。
  4. 根据权利要求3所述的发光基板,其中,所述第二过孔靠近所述基板的一端的孔径小于所述第二过孔远离所述基板的一端的孔径。
  5. 根据权利要求3所述的发光基板,其中,所述第三过孔靠近所述基板的一端的孔径小于所述第三过孔远离所述基板的一端的孔径。
  6. 根据权利要求3所述的发光基板,其中,沿靠近所述基板的方向,所述第二过孔的孔径逐渐减小。
  7. 根据权利要求3所述的发光基板,其中,沿靠近所述基板的方向,所述第三过孔的孔径逐渐减小。
  8. 根据权利要求2所述的发光基板,其中,所述第二传输部的材料包括银胶。
  9. 根据权利要求2所述的发光基板,其中,每条所述传输线均包括所述第一传输部和所述第二传输部。
  10. 根据权利要求1所述的发光基板,其中,所述基板具有多个侧面,所述侧面连接在所述第一面与第二面之间,至少一条所述传输线包括依次连接的第三传输部、第四传输部和第五传输部,其中,
    所述第三传输部位于所述基板的第一面上,所述第三传输部的两端分别与所述发光单元和所述第四传输部连接;
    所述第四传输部位于所述基板的侧面上;
    所述第五传输部的一端与所述第四传输部连接,另一端延伸至所述绑定区,所述第五传输部的至少一部分位于所述基板的第二面上。
  11. 根据权利要求10所述的发光基板,其中,所述第五传输部包括依次连接的第一传输子部、第二传输子部和第三传输子部,
    所述第一传输子部与所述第四传输部连接,所述第三传输子部位于所述绑定区,所述第二传输子部和所述第四传输部分别位于所述基板的两个相对的侧面上。
  12. 根据权利要求11所述的发光基板,其中,所述第二传输子部和所述第四传输部的制作材料均包括导电银胶。
  13. 根据权利要求10至12中任意一项所述的发光基板,其中,所述发光区划分为远端发光区和近端发光区,所述近端发光区位于所述远端发光区与所述绑定区之间,所述近端发光区中和所述远端发光区中均设置有多个所述发光单元,所述远端发光区中的所述发光单元所连接的各条传输线均包括所述第三传输部、第四传输部和第五传输部。
  14. 根据权利要求13所述的发光基板,其中,所述近端发光区中的所述发光单元所连接的各条传输线均位于所述基板的第一面上。
  15. 根据权利要求10至12中任意一项所述的发光基板,其中,所述传输线与所述发光单元之间设置有平坦化层,所述发光单元的两端均通过所述平坦化层上的第四过孔与相应的所述传输线连接。
  16. 根据权利要求10至12中任意一项所述的发光基板,其中,所述发光单元还包括连接线、以及位于所述发光单元两端的信号线,所述发光单元中的多个发光件被分为至少一组,每组包括串联在所述 发光单元两端之间的多个所述发光件,同一组中的每相邻两个所述发光件通过所述连接线连接,同一组中的首尾两个所述发光件分别通过相应的信号线与所述传输线连接;所述发光件包括发光部和与所述发光部连接的引脚;
    所述发光基板还包括第一保护层,所述连接线和所述信号线位于所述第一保护层与所述基板之间,所述发光部位于所述第一保护层的远离所述基板的一侧,所述发光件的引脚穿过所述第一保护层并与所述连接线或信号线连接;
    所述发光基板还包括第二保护层,所述第二保护层位于所述第五传输部的远离所述第一保护层的一侧。
  17. 根据权利要求1所述的发光基板,其中,所述发光区包括多个分区,每个所述分区中设置有所述发光单元,所述发光单元中的多个发光件被分为多组,每组包括串联的多个所述发光件,不同组的所述发光件并联。
  18. 根据权利要求1至12中任意一项所述的发光基板,其中,所述发光件为Micro-LED或Mini-LED。
  19. 一种背光源,包括权利要求1至18中任意一项所述的发光基板。
  20. 一种显示装置,包括权利要求19所述的背光源。
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