WO2021189777A1 - Led display panel and led display - Google Patents

Abstract

Provided are an LED display panel and an LED display. The display panel comprises a display back plate provided with an LED array. The LED array comprises LED chips arranged side by side. The LED chips comprise vertical emission type light-emitting chips and oblique emission type light-emitting chips. The vertical emission type light-emitting chips are arranged inside the LED array. The direction of chief rays emitted by the vertical emission type light-emitting chips is perpendicular to the direction of the display back plate. The oblique emission type light-emitting chips are arranged at an edge of the LED array. The direction of chief rays emitted by the oblique emission type light-emitting chips is away from the direction of the geometric center of the display back plate. The vertical emission type light-emitting chips are arranged inside the LED array, and the oblique emission type light-emitting chips are arranged at an edge of the LED array. By means of chief rays emitted by the oblique emission type light-emitting chips that are away from the direction of the geometric center of a display back plate, a light-gathering effect is formed between adjacent LED display panels, thereby preventing dark fringes from being generated between adjacent LED display panels, and improving the overall display effect.

Description

LED display panel and LED display Technical field

The invention relates to the technical field of light-emitting diode preparation and the technical field of LED display screen preparation, and relates to an LED display panel and an LED display, in particular to an LED display panel and an LED display capable of eliminating dark lines.

Background technique

LED, that is, light-emitting diode, emits light through the combination of electrons and holes. It can efficiently convert electrical energy into light energy. It has multiple advantages such as small size, rich color, low energy consumption, and long service life. It is considered as the next generation entry A new type of solid-state light source in the field of general lighting. LED displays based on LEDs have many advantages such as high stability, long service life and low operating temperature. At the same time, they also inherit the advantages of LED low power consumption, color saturation, fast response speed, and strong contrast. Application prospects.

Generally, the LED display is formed by splicing multiple LED display panels. The LED display panel includes a display area and a peripheral area. The display area includes LED chips arranged in an array, and the peripheral area includes some driving circuits and driving chips. Limited by the structure, the edge of the LED display panel cannot be equipped with LED chips, but a certain blank area is reserved. When two adjacent LED display panels are spliced together, this blank area will lead to adjacent LED displays There will be dark lines between the panels, which will affect the overall display effect.

Therefore, the existing technology needs to be improved and developed.

Summary of the invention

The technical problem to be solved by the present invention is to provide an LED display panel and an LED display in view of the above-mentioned defects of the prior art, which can ensure that no dark lines are generated between adjacent LED display panels and improve the overall display effect.

The technical solutions adopted by the present invention to solve the technical problems are as follows:

An LED display panel, comprising a display backplane, the display backplane is provided with an LED array, and the LED array includes a plurality of LED chips;

The LED chip includes a vertical emission type light-emitting chip and an oblique emission type light-emitting chip;

The LED array is provided with at least one vertical emission type light-emitting chip, and the direction of the chief ray emitted by the vertical emission type light-emitting chip is perpendicular to the direction of the display backplane;

The edge of the LED array is provided with at least one oblique emission type light-emitting chip, and the principal rays emitted by the oblique emission type light-emitting chip are directed away from the geometric center of the display backplane.

Compared with the prior art, the technical solution has the following beneficial effects: a vertical emission type light-emitting chip is arranged inside the LED array, and an oblique emission type light-emitting chip is arranged at the edge of the LED array. The chief ray oriented away from the geometric center of the display backplane forms a condensing effect between adjacent LED display panels, thereby avoiding dark lines between adjacent LED display panels and improving the overall display effect.

Further, the display backplane has a rectangular plate-shaped structure, the LED array is disposed on the display backplane, and the edges of the LED array are located on four sides of the display backplane;

At least one side of the display backplane is provided with the oblique emission type light-emitting chip.

The beneficial effect of adopting the above solution is that according to the position of the display backplane, one or more sides of the display backplane can be optionally provided with oblique emission type light-emitting chips, so as to make the LED display composed of LED display panels. The display effect is better.

Further, the display backplane includes a substrate, a circuit layer, and a planarization layer arranged in sequence, the circuit layer is provided on the substrate, the planarization layer is provided on the circuit layer; the planarization layer A plurality of first contact electrodes and second contact electrodes are provided on the upper surface;

The vertical emission type light emitting chip and the oblique emission type light emitting chip are both vertical type LED chips, and the vertical emission type light emitting chip and the oblique emission type light emitting chip include a first electrode and a first semiconductor layer stacked in sequence. , The light-emitting layer, the second semiconductor layer and the second electrode;

The vertical emission type light-emitting chip and the inclined emission type light-emitting chip are both disposed on the planarization layer, and the first electrode and the second electrode of the LED chip are connected to the first contact electrode and the second electrode, respectively. Contact electrode welding.

The beneficial effects of adopting the above solution are: the backplane substrate plays a structural support role, the circuit layer plays an electrical connection role, and the planarization layer makes the outer surface of the LED display panel more flat. The LED chip is connected to the first contact electrode and the second contact electrode through the first electrode and the second electrode on the LED chip, thereby achieving electrical connection.

Further, the substrate is a transparent glass material or a transparent plastic material.

The beneficial effect of adopting the above solution is that the transparent glass material or the transparent plastic material is used as the material of the substrate, which can play a structural support function while preventing light from being blocked.

Further, the first semiconductor layer, the light-emitting layer, and the second semiconductor layer form a first side surface and a second side surface that are arranged oppositely;

In the vertical emission type light emitting chip, the first side surface is a straight plane, the second side surface is a straight plane or an inclined plane, and the chief ray of the vertical emission type light emitting chip emits from the first side surface;

In the oblique emission type light emitting chip, the first side surface is a straight plane, the second side surface is an oblique plane, and the chief ray of the oblique emission type light emitting chip emits from the second side surface.

The beneficial effect of adopting the above solution is: in the inclined emission type light-emitting chip, the light is emitted through the inclined plane, and the emission direction of the chief light of the LED chip is changed; and in the vertical emission type light-emitting chip, the second side can also be selected to be inclined. Plane to reduce production costs.

Further, in the vertical emission type light-emitting chip, the side facing away from the display backplane is a straight plane, and the straight plane is parallel to the surface of the display backplane;

In the oblique emission type light-emitting chip, the side facing away from the display backplane is an oblique plane, and the oblique plane is inclined to the side of the display backplane.

Further, the vertical emission type light-emitting chip and the inclined emission type light-emitting chip are LED chips of the same size and model.

The beneficial effect of adopting the above solution is that LED chips of the same size and type are used as the vertical emission type light-emitting chip and the inclined emission type light-emitting chip, and only one type of LED chip needs to be arranged on one LED display panel, which helps to reduce the production cost.

Further, the second side surface of the vertical emission type light-emitting chip sinks downward into the groove, and the first side surface of the inclined emission type light-emitting chip sinks downward into the groove.

The beneficial effects of adopting the above scheme are: it is convenient for manufacturers to produce and can reduce production costs

Further, a groove is provided on the planarization layer, the groove is arranged between the first contact electrode and the second contact electrode, and the epitaxial part of the LED chip is arranged in the groove Inside;

A gap is formed between the LED chip and the bottom of the groove.

The beneficial effect of adopting the above solution is that grooves are provided on the planarization layer, and the LED chips are arranged on the display backplane through the grooves, so that the structure of the LED display panel is firmer, and at the same time, it is conducive to adopting multiple LED chips in accordance with The predetermined pattern is arranged into an LED array. In addition, by appropriately deepening the depth of the groove, a gap is formed between the LED chip and the bottom of the groove, thereby avoiding pressure damage to other devices on the LED display panel when the LED chip is installed.

Further, the circuit layer includes a buffer layer, a gate insulating layer and an interlayer insulating layer provided;

The buffer layer is disposed on the substrate, and the planarization layer is disposed on the interlayer insulating layer.

The beneficial effects of adopting the above solution are: the buffer layer can provide a flat surface above the substrate, the gate insulating layer can isolate the gate and the active layer, and the interlayer insulating layer can isolate the source and gate, Drain and gate.

Further, thin film transistors are further provided in the circuit layer, and the thin film transistors correspond to the LED chips one-to-one;

The thin film transistor includes an active layer, a gate, a source and a drain, the source and the drain are respectively connected to the active layer, and the thin film transistor is connected to the LED chip through its drain ；

The gate insulating layer is used to isolate the gate and the active layer on the thin film transistor;

The interlayer insulating layer is used to isolate the source and gate of the thin film transistor, and to isolate the drain and gate of the thin film transistor.

The beneficial effect of adopting the above solution is that by providing thin film transistors corresponding to the LED chips one by one, each LED chip can be driven one by one, which helps to achieve high speed, high brightness and high contrast of the LED display panel, and improves the performance of the LED display panel. performance.

Further, a power ground line is provided in the circuit layer; the first contact electrode is connected to the drain on the thin film transistor, the second contact electrode is connected to the power ground line, and the first contact The electrode and the second contact electrode are also connected to the first electrode and the second electrode of the LED chip, respectively.

The beneficial effect of adopting the above solution is that the LED chip is connected to the drain on the thin film transistor and the power ground line provided in the circuit layer through the first contact electrode and the second contact electrode on the planarization layer, respectively, which can ensure the reliability of the connection .

Further, the material of the buffer layer is silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide or titanium nitride.

Further, the material of the gate insulating layer is SiO ₂ , SiNx, SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , HfO ₂ or ZnO ₂ .

Further, the material of the interlayer insulating layer is SiO ₂ , SiNx, SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , HfO ₂ or ZnO ₂ .

An LED display, which is formed by splicing at least two of the above-mentioned LED display panels;

In the adjacent LED display panels, the chief ray emitted by the oblique emission type light-emitting chip on the first LED display panel and the oblique emission type light emission on the second LED display panel are The chief rays of light emitted by the chip are intertwined.

Compared with the prior art, the beneficial effect of this technical solution is: in the LED display panel, the LED array is provided with a vertical emission type light-emitting chip, and the edge of the LED array is provided with an oblique emission type light-emitting chip. The chief ray emitted by the light-emitting chip is directed away from the geometric center of the display backplane; the LED display panel of the above structure is spliced to obtain an LED display, which can form a light-gathering effect between adjacent LED display panels, thereby avoiding adjacent LED displays Dark lines are generated between the panels to enhance the overall display effect.

Description of the drawings

Fig. 1 is a front view of the splicing of LED display panels of the present invention.

Fig. 2 is a front detailed view of the splicing of the LED display panel of the present invention.

Fig. 3 is a schematic side view of the first embodiment of the LED display panel of the present invention.

Fig. 4 is a schematic side view of a second embodiment of the LED display panel of the present invention.

Fig. 5 is a schematic side view of a third embodiment of the LED display panel of the present invention.

Fig. 6 is a first schematic diagram of the structure of the LED chip in the LED display panel of the present invention and the display backplane cooperated.

Fig. 7 is a first schematic diagram of the structure of the LED chip and the thin film transistor in the LED display panel of the present invention.

Fig. 8 is a second schematic diagram of the structure of the LED chip in the LED display panel of the present invention that cooperates with the display backplane.

FIG. 9 is a second schematic diagram of the structure of the LED chip and the thin film transistor in the LED display panel of the present invention.

10 is a schematic diagram of the structure of an LED chip with a straight plane on the second side of the LED display panel of the present invention.

11 is a schematic diagram of the structure of an LED chip with an oblique plane on the second side in the LED display panel of the present invention.

FIG. 12 is an exploded schematic diagram of the vertical emission type light emitting chip provided with an inclined plane and the groove in the LED display panel of the present invention.

FIG. 13 is a schematic diagram of a combination of a vertical emission type light-emitting chip provided with an inclined plane and a groove in the LED display panel of the present invention.

Fig. 14 is an exploded schematic diagram of the inclined emitting light emitting chip and the groove in the LED display panel of the present invention.

15 is a schematic diagram of the combination of the inclined emitting light emitting chip and the groove in the LED display panel of the present invention.

In the figure, the list of parts represented by each label is as follows:

Display backplane 1, LED array 2, LED chip 3, groove 4, through hole 5, thin film transistor 6;

The substrate 101, the circuit layer 102, the planarization layer 103, the buffer layer 104, the gate insulating layer 105, the interlayer insulating layer 106, the first contact electrode 107, and the second contact electrode 108;

Vertical emission type light emitting chip 301, oblique emission type light emitting chip 302, first electrode 303, first semiconductor layer 304, light emitting layer 305, second semiconductor layer 306, second electrode 307, first side surface 308, second side surface 309;

Active layer 601, gate 602, source 603, and drain 604.

Detailed ways

In order to make the objectives, technical solutions, and advantages of the present invention clearer and clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not used to limit the present invention.

In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", etc. are based on The orientation or positional relationship shown in the drawings is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as Restrictions on the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance.

In the description of the present invention, it should be noted that the terms "installation", "connection" and "connection" should be understood in a broad sense, unless otherwise clearly specified and limited. For example, it can be a fixed connection or a detachable connection. , Or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication between two components. When a component is referred to as being "fixed to" or "disposed on" another component, it can be directly on the other component or a central component may also be present. When a component is considered to be "connected" to another element, it can be directly connected to the other element or an intermediate element may be present at the same time. For those of ordinary skill in the art, the specific meaning of the above terms in the present invention can be understood under specific circumstances.

Limited by cost and production technology, the industry has not yet been able to make a large or super large LED display with a complete LED display panel; correspondingly, in order to obtain a large LED display, usually multiple smaller LED display panels are used. A larger LED display is formed by splicing. However, such an implementation has a very obvious defect, that is, the dark lines formed between adjacent LED display panels greatly affect the display effect of the LED display.

As shown in Figure 1 and Figure 2, the LED display is made up of at least two LED display panels spliced together. The LED display includes a display area and a peripheral area. The display area includes LED chips arranged in an array, and the peripheral area is not provided. Areas with LED chips can usually be provided with some driving circuits and driving chips. In the same LED display panel, the distance between adjacent LED chips in the display area is d; and when two LED display panels are spliced with each other, the distance between the LED chips on the edges of the two adjacent LED display panels at the splicing site The spacing is D; generally, the LED chips can be arranged densely, while the blank area on the edge of the LED display panel is relatively wide, so D>d, it is precisely because D>d, between the two LED display panels The splicing place will produce dark lines visually, which will affect the display effect of the LED display. If the dark lines formed due to the above reasons are eliminated, it is the technical problem to be solved by the present invention.

In order to solve the above-mentioned problems, the present invention provides an LED display panel and an LED display, which aim to avoid the formation of dark lines between the two LED display panels by making some improvements to the LED chips at the edge. Improve the display effect of the LED display panel.

As shown in FIG. 3, FIG. 4 and FIG. 5, an LED display panel includes a display backplane 1, and an LED array 2 is provided on the display backplane 1, and the LED array 2 includes LED chips 3 arranged side by side. The present invention pioneered the use of two light-emitting chips, a vertical emission type light-emitting chip 301 and an inclined emission type light-emitting chip 302, as the LED chip 3. Specifically, the LED array 2 is provided with at least one vertical emission type light-emitting chip 301, and the direction of the principal rays emitted by the vertical emission type light-emitting chip 301 is perpendicular to the direction of the display backplane 1; The edge of the LED array 2 is provided with at least one oblique emission type light-emitting chip 302, and the principal rays emitted by the oblique emission type light-emitting chip 302 are directed away from the geometric center of the display backplane 1. In FIGS. 3, 4, and 5, the direction indicated by the arrow is the direction of the chief ray emitted by the LED chip 3.

Each LED chip emits more than one light. Among the multiple lights emitted by the LED chip, there will be multiple lights with strong direction consistency, and these lights constitute the chief light of the LED chip. In contrast, there are some other light rays with slight deviations around the chief ray, and these rays are either to the left or to the right. In general, the divergence angle of an LED chip is about 120°, but it is the chief ray that realizes its light-emitting function.

Generally, the chief ray emitted by the LED chip 3 is oriented in a direction perpendicular to the display backplane 1. In the above technical solution, the principal ray emitted by the oblique emission type light-emitting chip 302 is oriented away from the display backplane 1. The direction of the geometric center of, the following three embodiments are used to specifically describe the direction of the chief ray of the oblique emission type light-emitting chip 302.

As shown in FIG. 3, in the first embodiment, two LED display panels are provided on the left and the right. In the LED display panel on the left, a vertical emission type light-emitting chip 301 is arranged close to its center position. The principal ray emitted by the vertical emission type light-emitting chip 301 is oriented perpendicular to the direction of the display backplane 1, and its rightmost edge An oblique emission type light-emitting chip 302 is provided on it, and the principal light emitted by the oblique emission type light-emitting chip 302 has an inclination angle to the right with respect to the vertical direction. Correspondingly, in the LED display panel on the right, a vertical emission type light-emitting chip 301 is arranged close to its center position. The direction of the chief ray emitted by the vertical emission type light-emitting chip 301 is perpendicular to the direction of the display backplane 1, and the most An oblique emission type light-emitting chip 302 is provided on the left edge, and the principal light emitted by the oblique emission type light-emitting chip 302 has an inclination angle to the left relative to the vertical direction. The principal light rays emitted by the oblique emitting light-emitting chip 302 in the direction away from the geometric center of the display backplane 1 form a condensing effect between adjacent LED display panels, thereby avoiding dark lines between adjacent LED display panels. Improve the overall display effect.

As shown in FIG. 4, in the second embodiment, the structure and working principle of the LED display panel are the same as those in the first embodiment. In the first embodiment, two oblique emitting light-emitting chips 302 are arranged on the rightmost edge of the left LED display panel, and two oblique emitting light emitting chips 302 are arranged on the leftmost edge of the right LED display panel. Specifically, the number of oblique emission type light-emitting chips 302 can also be adjusted according to the size of the LED display panel, or more than one can be provided. As a result, the brightness transition between adjacent LED display panels is smoother, and visually, it can provide a better display effect.

As shown in FIG. 5, in the third embodiment, a groove 4 is provided on the LED display panel, and the LED chip 3 is arranged in the groove 4. Such a structure can simplify the manufacturing process and reduce the production cost. In addition, after installation, there is a gap between the bottom of the groove 4 and the LED chip 3, which can prevent the pressure applied to the LED chip 3 during bonding from damaging the LED display panel. Device.

Specifically, the groove is arranged between the first contact electrode and the second contact electrode, and the epitaxial part of the LED chip is arranged in the groove. The epitaxial part of the LED chip specifically includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer. After holes and electrons come out of the first semiconductor layer and the second semiconductor layer, they are combined in the light-emitting layer and are The form releases energy and thus emits light. Placing the epitaxial part of the LED chip in the groove can not only fix the entire LED chip, but also seal the remaining surfaces of the LED chip through the groove, leaving only the side facing away from the display backplane for light emission. Improve luminous efficiency.

When implementing the technical solution of the present invention, the shape of the LED display panel can be a circle, a triangle, a trapezoid, a rectangle, and an irregular pattern. Preferably, the display backplane 1 has a rectangular plate-shaped structure. The LED array 2 is arranged on the display backplane 1, and the edges of the LED array 2 are located on the four sides of the display backplane 1; at least one side of the display backplane 1 is provided with The oblique emission type light-emitting chip 302 is described. Specifically, the display backplane 1 may be provided with an oblique emission type light-emitting chip 302 on one side, may be provided with an oblique emission type light-emitting chip 302 on two sides, or may be provided on three or four sides. There is an oblique emission type light-emitting chip 302.

For example, when three or more LED display panels are connected and joined side by side to obtain an LED display panel, the LED display panels at both ends only need to be provided with an oblique emitting light-emitting chip 302 on one side, and the LED in the middle The display panel needs to be provided with oblique emission type light-emitting chips 302 on two opposite sides. For another example, when a 2*2 LED display panel is obtained by combining four LED display panels side by side, the LED display panel needs to be provided with oblique emitting light-emitting chips 302 on two adjacent sides. For another example, when nine LED display panels are assembled side by side to obtain a 3*3 LED display panel, the LED display panel in the middle needs to be provided with oblique emitting light-emitting chips 302 on all four sides, and other LED displays The panel needs to be provided with oblique emission type light-emitting chips 302 on three adjacent sides, or needs to be provided with oblique emission type light-emitting chips 302 on two adjacent sides. In a word, by arranging the oblique emission type light-emitting chip 302 on the intersecting edges of two adjacent LED display panels, the problem of dark lines in the prior art can be solved, thereby improving the display effect of the LED display.

As shown in FIG. 6, FIG. 7, FIG. 8 and FIG. 9, the display backplane 1 includes a substrate 101, a circuit layer 102, and a planarization layer 103. The circuit layer 102 is disposed on the substrate 101. The chemical layer 103 is disposed on the circuit layer 102. Specifically, the vertical emission type light-emitting chip 301 and the oblique emission type light-emitting chip 302 are disposed on the planarization layer 103, and the vertical emission type light-emitting chip 301 and the inclined emission type light-emitting chip 302 are respectively connected to each other. The circuit layer 102 is connected.

Specifically, the substrate 101 mainly functions as a structural support. The substrate 101 includes a transparent glass material, such as silicon dioxide. The substrate 101 may also include a transparent plastic material, such as: polyethersulfone, polyacrylate, polyetherimide, polyethylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, Organic materials such as polyarylate, polyimide, polycarbonate, cellulose triacetate or cellulose propionate.

As shown in FIGS. 7 and 9, preferably, the circuit layer 102 includes a driving circuit for driving the LED chip 3, such as a thin film transistor 6. The thin film transistor 6 includes an active layer 601, a gate 602, a source 603, and a drain 604. The source 603 and the drain 604 are respectively connected to the active layer 601, and the thin film transistor 6 passes through The drain 604 is connected to the LED chip 3; the gate insulating layer 105 is used to isolate the gate 602 and the active layer 601 on the thin film transistor 6; the interlayer insulating layer 106 is used to isolate the The source 603 and the gate 602 of the thin film transistor 6 are used to isolate the drain 604 and the gate 602 of the thin film transistor 6. By providing the thin film transistors 6 corresponding to the LED chips 3 one-to-one, each LED chip 3 can be driven one by one, which helps to achieve high speed, high brightness and high contrast of the LED display panel, and improves the performance of the LED display panel.

In addition, the thin film transistor 6 is preferably a top-gate thin film transistor, but of course, it may also be a bottom-gate thin film transistor. The top-gate thin film transistor can significantly reduce the parasitic capacitance formed between the source drain 604 and the gate 602, thereby increasing the on-state current of the thin film transistor, thereby increasing the operating speed of the device, which is conducive to the reduction of the device size.

The active layer 601 on the thin film transistor 6 may include a semiconductor material, such as amorphous silicon or polysilicon. The active layer 601 may also include other materials, such as organic semiconductor materials or oxide semiconductor materials. The gate 602, source 603, and drain 604 may include low-resistance metal materials, such as aluminum, platinum, palladium, silver, magnesium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, molybdenum, titanium, tungsten, or copper Wait.

Specifically, the planarization layer 103 covers the circuit layer 102, which can eliminate the height difference formed by the sizes of various devices on the circuit layer 102 and make them planar. One of the main functions of the planarization layer 103 is to make the flatness of the layers above the planarization layer 103 uniform. Increasing the thickness of the planarization layer 103 can improve the color shift problem to a certain extent. The mechanism is that increasing the thickness can improve the flatness of the metal anode, so that the upper layers are flatter, and the color shift correction is easier.

The planarization layer 103 specifically includes organic materials, such as polymethyl methacrylate or polystyrene, and may also include polymer derivatives with phenolic groups, acrylic-based polymers, imide-based polymers, and aryl ether groups. Polymer, amide-based polymer, fluorine-based polymer, p-xylyl polymer, vinyl alcohol-based polymer, or any combination of the above materials.

As shown in FIGS. 7 and 9, more specifically, the circuit layer 102 includes a buffer layer 104, a gate insulating layer 105, and an interlayer insulating layer 106 arranged from bottom to top; the buffer layer 104 is arranged on the On the substrate 101, the planarization layer 103 is disposed on the interlayer insulating layer 106. The circuit layer 102 is also provided with thin film transistors 6, and the thin film transistors 6 correspond to the LED chips 3 one-to-one. Wherein, the buffer layer 104 is disposed above the substrate 101, which can provide a substantially flat surface above the substrate 101, and can reduce or prevent foreign matter or moisture from penetrating the substrate 101. The buffer layer 104 specifically includes an inorganic material, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, or titanium nitride. The buffer layer 104 may also include organic materials, such as polyimide, polyester, or acrylic. The gate electrode 602 and the active layer 601 can be isolated by the gate insulating layer 105. The gate insulating layer 105 specifically includes inorganic materials, such as SiO ₂ , SiNx, SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , and HfO ₂ Or ZnO ₂ and so on. The source electrode 603 and the gate electrode 602, the drain electrode 604 and the gate electrode 602 can be isolated by the interlayer insulating layer 106. The interlayer insulating layer 106 can also include inorganic materials, such as SiO ₂ , SiNx, SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , HfO ₂ or ZnO ₂ etc.

As shown in Figures 6 and 8, preferably, the planarization layer 103 is further provided with a first contact electrode 107 and a second contact electrode 108, and a power ground line is provided in the circuit layer 102; The contact electrode 107 is connected to the drain 604 of the thin film transistor 6, the second contact electrode 108 is connected to the power ground line, and the first contact electrode 107 and the second contact electrode 108 are also connected to the The LED chip 3 is connected. The LED chip 3 is respectively connected to the drain 604 on the thin film transistor 6 and the power ground line provided in the circuit layer 102 through the first contact electrode 107 and the second contact electrode 108 on the planarization layer 103, which can ensure the reliability of the connection. Specifically, the power ground line may be arranged on one of the buffer layer 104, the gate insulating layer 105, and the interlayer insulating layer 106 under the planarization layer 103.

As shown in FIGS. 6 and 8, specifically, the first contact electrode 107 and the second contact electrode 108 are provided on the surface of the planarization layer 103. The planarization layer 103 is provided with a through hole 5, the first contact electrode 107 is connected to the thin film transistor 6 in the circuit layer 102 through the filling material in the through hole 5, and the second contact electrode 108 is connected to the power ground line in the circuit layer 102 connect. Correspondingly, the first contact electrode 107 and the second contact electrode 108 are respectively bonded to the first electrode 303 and the second electrode 307 on the LED chip 3. The first contact electrode 107, the second contact electrode 108, the filling material in the through hole 5, and the connected material may include aluminum, platinum, palladium, silver, magnesium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, and molybdenum. , Titanium, tungsten or copper, etc.

As shown in FIGS. 10 and 11, the vertical emission type light-emitting chip 301 and the inclined emission type light-emitting chip 302 each include a first electrode 303, a first semiconductor layer 304, a light-emitting layer 305, and a second semiconductor layer arranged in sequence. 306 and second electrode 307. Two sides of the first semiconductor layer 304, the light-emitting layer 305, and the second semiconductor layer 306 form a first side surface 308 and a second side surface 309 that are disposed oppositely.

In the present invention, in the vertical emission type light-emitting chip 301, the first side surface 308 is set as a straight plane, and the second side surface 309 is set as a straight plane or an inclined plane, so that the vertical emission type The chief ray of the light-emitting chip 301 emerges from the first side surface 308. The present invention also groundbreakingly in the inclined emission type light-emitting chip 302, the first side surface 308 is set as a straight plane, and the second side surface 309 is set as an inclined plane, so that the inclined emission type light-emitting chip The chief ray of 302 exits from the second side surface 309.

The vertical emission type light-emitting chip 301 can be provided with two similarities. In the first type of vertical emission light-emitting chip 301, the first side surface 308 is a straight plane, and the second side surface 309 is also a straight plane. The first side surface 308 and the second side surface 309 are parallel to each other, except for the first side surface 308. In addition, the other side surfaces are provided with a mirror-like reflective layer for condensing light. In the second type of vertical emission light-emitting chip 301, the first side surface 308 is a straight plane, the second side surface 309 is an inclined plane, and an inclined angle is formed between the first side surface 308 and the second side surface 309, except for the first side surface. Except for 308, the other side surfaces are provided with a mirror-like reflective layer for condensing light. The function of the vertical emission type light-emitting chip 301 is to emit the chief rays perpendicular to the display backplane 1. Therefore, in the above two similar vertical emission type light-emitting chips 301, the chief rays are all emitted from the first side surface 308 and are all vertical于Display back panel 1.

Correspondingly, in the inclined emitting light-emitting chip 302, the first side surface 308 is set to be a straight plane, and the second side surface 309 is set to be an inclined plane. The present invention uses the refraction effect of the inclined plane on light to change the LED chip. 3 The exit direction of the chief ray.

As shown in Figures 12 and 13, when mounting the vertical emission type light emitting chip with the second side surface as an inclined plane, the second side surface is plunged into the groove 4 downward, and then the first contact electrode 107 is connected to the first contact electrode 107 of the LED chip 3. The electrode 303 is connected, and the second contact electrode 108 is connected to the second electrode 307 of the LED chip 3.

As shown in FIGS. 14 and 15, when the inclined emission type light-emitting chip is installed, the first side surface 308 is downwardly plunged into the groove 4, and then the first contact electrode 107 is connected to the first electrode 303 of the LED chip 3, and The second contact electrode 108 is connected to the second electrode 307 of the LED chip 3.

As shown in FIG. 5, in the third embodiment, the vertical emission type light emitting chip 301 with the above second side surface 309 as an inclined plane is used, and the LED chip 3 of the same structure can be used as the vertical emission type light emitting chip 301 and the inclined emission type light emitting chip 301 respectively. The light-emitting chip 302 produces an LED display panel, which is convenient for manufacturers to produce and can reduce production costs. At the same time, after the LED chip 3 is installed in the groove 4, there is a gap between the bottom of the groove 4 and the LED chip 3, which can prevent the pressure applied to the LED chip 3 during bonding from damaging the devices on the LED display panel.

Correspondingly, the present invention also provides an LED display, which is formed by splicing at least two of the above-mentioned LED display panels; among the adjacent LED display panels, all of the LED display panels on the first one The chief ray emitted by the inclined emission light-emitting chip 302 and the principal light emitted by the inclined emission light-emitting chip 302 on the second LED display panel intersect each other. In the LED display panel, the LED array 2 is provided with a vertical emission type light-emitting chip 301, and the edge of the LED array 2 is provided with an oblique emission type light-emitting chip 302. The chief ray in the geometric center direction; the LED display is spliced by the LED display panels of the above structure, which can form a light-gathering effect between adjacent LED display panels, thereby avoiding dark lines between adjacent LED display panels and improving the overall The display effect.

In summary, the present invention provides an LED display panel and an LED display provided with such an LED display panel, which can ensure that no dark lines are generated between adjacent LED display panels and improve the overall display effect. In the prior art, the dark lines are generated between adjacent display backplanes 1 due to the excessively large distance between the LED chips 3, which in turn leads to poor display effects. The problem to be solved by the present invention is how to eliminate the dark lines. The technical solution adopted by the present invention is that an inclined plane is provided on the LED chip 3, and the exit direction of the chief ray is changed through this inclined plane, so that intersecting light is formed on the edges of the two backplanes, thereby eliminating dark lines. In general, there are two invention points: 1. An LED chip 3 that emits light obliquely is arranged on the edge of the display backplane 1. 2. An inclined plane is provided on the LED chip 3 to change the direction of light emission.

It should be understood that the application of the present invention is not limited to the above examples. For those of ordinary skill in the art, improvements or changes can be made based on the above description, and all these improvements and changes should fall within the protection scope of the appended claims of the present invention.

Claims (15)

1. An LED display panel includes a display backplane, the display backplane is provided with an LED array, the LED array includes a plurality of LED chips, and is characterized in that:

   The LED chip includes a vertical emission type light-emitting chip and an oblique emission type light-emitting chip;

   The LED array is provided with at least one vertical emission type light-emitting chip, and the direction of the chief ray emitted by the vertical emission type light-emitting chip is perpendicular to the direction of the display backplane;

   The edge of the LED array is provided with at least one oblique emission type light-emitting chip, and the principal rays emitted by the oblique emission type light-emitting chip are directed away from the geometric center of the display backplane.
2. The LED display panel according to claim 1, wherein the display backplane is a rectangular plate structure, the LED array is disposed on the display backplane, and the edge of the LED array is located on the Display the four sides of the back panel;

   The oblique emission type light-emitting chip is arranged on at least one side of the display backplane.
3. The LED display panel according to claim 1, wherein the display backplane includes a substrate, a circuit layer, and a planarization layer arranged in sequence; the planarization layer is provided with a plurality of first contact electrodes and Second contact electrode;

   The vertical emission type light emitting chip and the oblique emission type light emitting chip are both vertical type LED chips, and the vertical emission type light emitting chip and the oblique emission type light emitting chip include a first electrode and a first semiconductor layer stacked in sequence. , The light-emitting layer, the second semiconductor layer and the second electrode;

   The vertical emission type light-emitting chip and the inclined emission type light-emitting chip are both disposed on the planarization layer, and the first electrode and the second electrode of the LED chip are connected to the first contact electrode and the second electrode, respectively. Contact electrode welding.
4. The LED display panel of claim 3, wherein the substrate is a transparent glass material or a transparent plastic material.
5. 3. The LED display panel of claim 3, wherein the first semiconductor layer, the light-emitting layer, and the second semiconductor layer form a first side surface and a second side surface that are opposed to each other;

   In the vertical emission type light emitting chip, the first side surface is a straight plane, the second side surface is a straight plane or an inclined plane, and the chief ray of the vertical emission type light emitting chip emits from the first side surface;

   In the inclined emission type light emitting chip, the first side surface is a straight plane, the second side surface is an inclined plane, and the chief ray of the inclined emission type light emitting chip is emitted from the second side surface.
6. The LED display panel according to claim 5, wherein in the vertical emission type light-emitting chip, the side facing away from the display backplane is a straight plane, and the straight plane is parallel to the display backplane. surface;

   In the oblique emission type light-emitting chip, the side facing away from the display backplane is an oblique plane, and the oblique plane is inclined to the side of the display backplane.
7. The LED display panel according to claim 6, wherein a groove is provided on the planarization layer, and the groove is provided between the first contact electrode and the second contact electrode, The epitaxial part of the LED chip is arranged in the groove;

   A gap is formed between the LED chip and the bottom of the groove.
8. 7. The LED display panel of claim 7, wherein the vertical emission type light-emitting chip and the oblique emission type light-emitting chip are LED chips of the same size and model.
9. 8. An LED display panel according to claim 8, wherein the second side of the vertical emission type light-emitting chip is recessed into the groove downward, and the first side of the inclined emission type light-emitting chip faces Sink into the groove.
10. The LED display panel of claim 3, wherein the circuit layer includes a buffer layer, a gate insulating layer, and an interlayer insulating layer provided; the buffer layer is provided on the substrate, and the The planarization layer is disposed on the interlayer insulating layer;

    Thin film transistors are also provided in the circuit layer, and the thin film transistors correspond to the LED chips one-to-one;

    The thin film transistor includes an active layer, a gate, a source and a drain, the source and the drain are respectively connected to the active layer, and the thin film transistor is connected to the LED chip through its drain ；

    The gate insulating layer is used to isolate the gate and the active layer on the thin film transistor;

    The interlayer insulating layer is used to isolate the source and gate of the thin film transistor, and to isolate the drain and gate of the thin film transistor.
11. The LED display panel according to claim 10, wherein a power ground line is provided in the circuit layer; the first contact electrode is connected to the drain on the thin film transistor, and the second contact The electrode is connected to the power ground wire, and the first contact electrode and the second contact electrode are also connected to the first electrode and the second electrode of the LED chip, respectively.
12. The LED display panel of claim 10, wherein the material of the buffer layer is silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, or titanium nitride.
13. The LED display panel of claim 10, wherein the gate insulating layer is made of SiO ₂ , SiNx, SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , HfO ₂ or ZnO ₂ .
14. The LED display panel of claim 10, wherein the material of the interlayer insulating layer is SiO ₂ , SiNx, SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , HfO ₂ or ZnO ₂ .
15. An LED display, characterized in that: the LED display is formed by splicing at least two LED display panels according to any one of claims 1-14;

    In the adjacent LED display panels, the chief ray emitted by the oblique emission type light-emitting chip on the first LED display panel and the oblique emission type light emission on the second LED display panel are The chief rays of light emitted by the chip are intertwined.

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