WO2021189549A1 - 色转换层及其制造方法 - Google Patents

色转换层及其制造方法 Download PDF

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Publication number
WO2021189549A1
WO2021189549A1 PCT/CN2020/084181 CN2020084181W WO2021189549A1 WO 2021189549 A1 WO2021189549 A1 WO 2021189549A1 CN 2020084181 W CN2020084181 W CN 2020084181W WO 2021189549 A1 WO2021189549 A1 WO 2021189549A1
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Prior art keywords
block copolymer
color conversion
conversion layer
copolymer film
self
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PCT/CN2020/084181
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English (en)
French (fr)
Inventor
吴永伟
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/765,167 priority Critical patent/US11415884B2/en
Publication of WO2021189549A1 publication Critical patent/WO2021189549A1/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • This application relates to the field of display, and in particular to a color conversion layer and a manufacturing method thereof.
  • Quantum dots and perovskite materials are used in the display field because of their high luminous efficiency, narrow emission spectrum, and covering the full spectrum of visible light. It is known that quantum dots or perovskite materials can be dispersed in a solvent to form printing inks, and inkjet printing technology (Inkjet Printing, IJP) is printed into a light-emitting film, the light-emitting film can be used as an organic light-emitting diode display (Organic Light-Emitting Diode Display, OELD) color conversion layer.
  • IJP Inkjet Printing
  • OELD Organic Light-Emitting Diode Display
  • the advantage of inkjet printing technology lies in the high-precision control of the ink drop position and the control of ink deposition at the pixel level to form a high-precision pixel film, which is suitable for the manufacture of large-size and high-resolution panels.
  • the purpose of the present application is to provide a color conversion layer with simple process, low cost and high precision and a manufacturing method thereof.
  • This application provides a method for manufacturing a color conversion layer, which includes the following steps:
  • the block copolymer film is self-assembled to obtain a self-assembled block copolymer film, wherein the self-assembled block copolymer film has a plurality of regularly arranged main body parts and is located in the plurality of main bodies. The interval between the parts;
  • the color conversion layer ink is dropped into the concave portion, and the color conversion layer is obtained after the color conversion layer ink is dried, wherein the color conversion layer ink includes a color conversion material.
  • the block copolymer film includes a matrix and a block copolymer dispersed in the matrix, the main body portion is composed of the block copolymer, and the spacer portion is composed of the matrix constitute.
  • the block copolymer film includes a matrix and a block copolymer dispersed in the matrix, the main body portion is composed of the matrix, and the spacer portion is composed of the block copolymer. constitute.
  • the protective layer has an affinity with the main body part, but has no affinity with the spacer part.
  • the material of the protective layer is photoresist, and the spacers that are not covered by the protective layer are removed by using a developing solution.
  • the developer is selected from one or more of toluene, chlorobenzene, anisole, and ethyl acetate.
  • the main body is in a strip shape, a dot matrix shape or a grid shape.
  • the method for making the block copolymer film self-assemble is selected from one or more of thermal annealing, solvent annealing, mechanical force field and electric field.
  • the step of making the block copolymer film self-assemble to obtain a self-assembled block copolymer film further includes pre-assembling the block copolymer film through mechanical shearing treatment.
  • the block copolymer is selected from PI-PCEMA-PtBA, PS-PAA, PS-PB, PS-P2VP, PS-P4VP, PPV-b-PEO, PPV-b-PMMA, PA -One or more of b-PS, PI-b-PPE-b-PI, PPE-PI, PS-b-PTH-b-PS, PS-b-PTH, PS-b-PPP.
  • a substrate is provided, and the step of forming a block copolymer film on the substrate includes: coating the substrate with polystyrene-b- with a mass fraction of 0.5-20%.
  • Poly-2-vinylpyridine solution the block copolymer film is formed after the polystyrene-b-poly-2-vinylpyridine solution is dried, wherein the polystyrene-b-poly-2-vinylpyridine solution is
  • the solvent is selected from one or more of toluene, chlorobenzene, anisole, and ethyl acetate;
  • the step of making the block copolymer film self-assemble to obtain a self-assembled block copolymer film includes: pre-assembling the block copolymer film through mechanical shearing treatment, and then performing solvent fumigation treatment to make the The block copolymer film self-assembly, wherein the solvent used in the fumigation treatment is selected from one or more of chloroform, acetone, and dichloroethane.
  • a color conversion layer is characterized in that the color conversion layer includes a film with a pixel-level microstructure and a color conversion material dispersed in the film with a pixel-level microstructure, and
  • the film is a self-assembled block copolymer film.
  • the self-assembled block copolymer film a plurality of regularly arranged main body portions and recesses located between the main body portions are formed, and the color conversion material is located Inside the recess.
  • the main body is composed of a self-assembled block copolymer.
  • the main body is composed of a matrix from a block copolymer film.
  • the main body is in a strip shape, a dot matrix shape or a grid shape.
  • the self-assembly effect of the block copolymer can be used to obtain a regular microstructure at the pixel level.
  • the pixel-level regular microstructure can be used to achieve precise printing of quantum dots or perovskite materials, thereby obtaining a high-precision color conversion layer, and applying it to blue backlight display technology.
  • the manufacturing method of the pixel-level microstructure film of the present application has simple process, low cost and high precision.
  • 1(a) to 1(e) are schematic diagrams of the steps of the method for manufacturing the color conversion layer according to the first embodiment of the application.
  • 2(a) to 2(c) are schematic plan views of the block copolymer film after self-assembly in the first embodiment of the application.
  • FIG. 3 is a schematic diagram of the structure of the display panel according to the third embodiment of the present application.
  • the first embodiment of the present application provides a color conversion layer and a manufacturing method thereof.
  • the color conversion layer can be used for blue organic light-emitting diodes or blue micro light-emitting diodes (Micro Light Emitting Diode Display, Micro LED) as the display panel of the backlight source.
  • blue organic light-emitting diodes or blue micro light-emitting diodes (Micro Light Emitting Diode Display, Micro LED) as the display panel of the backlight source.
  • the manufacturing method of the color conversion layer includes the following steps:
  • a substrate 10 is provided, and a block copolymer film 20 is formed on the substrate 10.
  • the block copolymer film 20 includes a matrix and a block copolymer dispersed in the matrix.
  • any block copolymer capable of solution processing can be used as the block copolymer in this application.
  • the block copolymers used include but are not limited to: PI (polyisoprene)-PCEMA (poly-2-cinnamoyl ethyl methacrylate)-PtBA (polybutyl acrylate), PS (polystyrene )-PAA (polyacrylic acid), PS (polystyrene)-PB (polybutadiene), PS (polystyrene)-P2VP (poly-2-vinylpyridine), PS (polystyrene)-P4VP (poly 4-vinylpyridine), PPV (polyp-styrene)-b-PEO (polyoxyethylene), PPV (polyp-styrene)-b-PMMA (pol
  • the block copolymer film 20 is a PS (polystyrene)-P2VP (poly-2-vinylpyridine) film.
  • the step of forming the block copolymer film 20 on the substrate 10 includes: coating a PS (polystyrene)-P2VP (poly-2-vinylpyridine) solution with a mass fraction of 0.5-20% on the substrate 10, and The PS (polystyrene)-P2VP (poly-2-vinylpyridine) solution is dried to form a block copolymer film.
  • the solvent of the PS (polystyrene)-P2VP (poly-2-vinylpyridine) solution can be selected from one or more of toluene, chlorobenzene, anisole, and ethyl acetate.
  • the self-assembled block copolymer film 20a has a plurality of regularly arranged main body portions 21a and a spacer 22a located between the plurality of main body portions 21a.
  • the size of the body portion 21a and the spacer portion 22a formed after the self-assembly of the block copolymer is about several tens of microns, and the block copolymer film 20a after the self-assembly has a pixel-level microstructure.
  • FIG. 2(a) Please refer to FIG.
  • the main body 21a may be strip-shaped, arranged at intervals along the first direction. Please refer to FIG. 2(b). In another embodiment, the main body 21a may be a dot matrix. Please refer to FIG. 2(c). In another embodiment, the main body 21a may be grid-shaped. Different forms of self-assembled block copolymers can be used for different purposes. Different forms of self-assembled block copolymers can be used for different purposes.
  • the main body 21a is formed by self-assembly of a block copolymer.
  • the spacer 22a is composed of the matrix in the block copolymer film 20.
  • the method of self-assembly is selected from one or more of thermal annealing, solvent annealing, mechanical force field and electric field.
  • the block copolymer film 20 can be pre-assembled, and then the block copolymer film 20 can be formally self-assembled.
  • the block copolymer film 20 is pre-assembled by mechanical shearing treatment, and then a solvent fumigation treatment is performed to make the block copolymer film 20 self-assemble.
  • the solvent used in the fumigation treatment is selected from one or more of chloroform, acetone, and dichloroethane.
  • the mechanical shear force induces the orientation of the block copolymers, that is, they are arranged in a macroscopic order; then solvent vapor is used for fumigation (ie solvent annealing), and the solvent fumigation can not destroy the shear-induced long-range order Based on the elimination of microscopic defects.
  • a protective layer 200 is formed on the self-assembled block copolymer film 20a, and the protective layer 200 covers the main body 21a.
  • the protective layer 200 has affinity with the main body 21a, that is, the block copolymer, but has poor affinity with the spacer 22a, that is, the matrix, or vice versa.
  • the block copolymer is a hydrophilic polymer
  • the protective layer 200 is also hydrophilic, and the matrix is lipophilic.
  • the protective layer 200 gathers on the main body portion 21a and covers the main body portion 21a, but does not cover the spacer portion 22a.
  • the regularly arranged recesses 22b obtain a thin film 20b with a pixel-level microstructure.
  • the material of the protective layer 200 is photoresist, and the spacer 22a that is not covered by the protective layer 200 can be removed by a developer.
  • the developer is selected from one or more of toluene, chlorobenzene, anisole, and ethyl acetate.
  • the spacer 22a is formed by self-assembly of a block copolymer.
  • the main body 21a is composed of a matrix.
  • the protective layer 200 has affinity with the matrix, while the affinity of the block copolymer is poor, or vice versa.
  • the recess 22b is formed by removing the self-assembled block copolymer from the self-assembled block copolymer film 20a.
  • the color conversion layer ink 30 a includes a color conversion material 30.
  • the color conversion material 30 includes quantum dots or perovskite. The red, green and blue inks can be used to form the color conversion layer 1 for color conversion of blue light.
  • the color conversion layer 1 includes a film 20b with a pixel-level microstructure and a color conversion material 30 dispersed in the film 20b with a pixel-level microstructure.
  • the film 20b with a pixel-level microstructure has a plurality of regularly arranged main body portions 21a and concave portions 22b located between the main body portions, and the color conversion material 30 is located in the concave portions.
  • the color conversion layer 1 includes partitions and red pixel units, green pixel units, and blue pixel units (or transparent pixel units) arranged between the partitions.
  • the quantum dot used may be a core-shell structure quantum dot commonly used in the technical field.
  • the materials of the core and shell are not limited, for example: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, MnSe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs can be selected , GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe and PbTe binary semiconductor materials; or can be selected from CdxZn1-xSe, CdxZn1-xS, CuInS2 , CuInSe2, AgInS2, AgInSe2, InxGa1-xP, CdxZn1-xSySe1-y composed of ternary or more semiconductor materials; or can
  • the color conversion layer 1 of the present application can be used in the display panel 100.
  • the display panel 100 includes a first substrate 2, a second substrate 3, and a blue light emitting layer 4 and a color conversion layer 1 arranged between the first substrate 2 and the second substrate 3.
  • the color conversion layer 1 is arranged on the light emitting side of the blue light emitting layer 4.
  • the color conversion layer 1 is disposed on the first substrate 2.
  • the blue light emitting layer 4 is disposed on the second substrate 3.
  • the display panel 100 further includes a color filter layer 5 disposed between the first substrate 2 and the color conversion layer 1.
  • the blue light emitting layer 4 and the color conversion layer 1 may both be disposed on the second substrate 3.
  • the blue light emitting layer 4 includes a blue organic light emitting diode device or a blue micro light emitting diode device.
  • the color conversion layer 1 includes a film 20b with a pixel-level microstructure and a color conversion material 30 dispersed in the film 20b with a pixel-level microstructure.
  • the film 20b is a block copolymer film after self-assembly.
  • a plurality of regularly arranged main body portions 21a and concave portions 22b located between the main body portions are formed in the self-assembled block copolymer film, and the color conversion material 30 is located in the concave portions.
  • the color conversion material 30 includes quantum dots or perovskite.
  • the self-assembly effect of the block copolymer can be used to obtain a regular microstructure at the pixel level.
  • the pixel-level regular microstructure can be used to achieve precise printing of quantum dots or perovskite materials, thereby obtaining a high-precision color conversion layer, and applying it to blue backlight display technology.
  • the manufacturing method of the pixel-level microstructure film of the present application has simple process, low cost and high precision.

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  • General Physics & Mathematics (AREA)
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Abstract

一种色转换层（1）及其制备方法。该制造方法包括以下步骤：使嵌段共聚物薄膜（20）自组装，得到具有多个规则排列的主体部（21a）以及位于多个主体部（21a）之间的间隔部（22a）的自组装后的嵌段共聚物薄膜（20a）；形成保护层（200），保护层（200）覆盖主体部（21a）；除去间隔部（22a），以形成多个规则排列的凹部（22b），向凹部中滴入色转换层墨水（30a），待色转换层墨水（30a）干燥后得到色转换层（1）。

Description

色转换层及其制造方法 技术领域
本申请涉及显示领域，尤其涉及一种色转换层及其制造方法。
 背景技术
量子点和钙钛矿材料由于具有发光效率高，发射光谱窄，可覆盖可见光全光谱范围等特点，而被应用于显示领域。已知量子点或者钙钛矿材料可分散于溶剂中形成打印墨水，并利用喷墨打印技术（Inkjet Printing，IJP）打印成发光薄膜，该发光薄膜可用作机发光二极管显示器（Organic Light-Emitting Diode Display, OELD）的色转换层。喷墨打印技术的优势在于高精度地控制墨水滴下位置，在像素等级上控制墨水沉积，形成高精度像素薄膜，适用于大尺寸、高分辨率的面板的制造。而将量子点或钙钛矿墨水打印形成像素级的规整排列，需要在基板上预先形成图案化的结构排布，从而将墨水“滴入”形成像素。
 技术问题
有鉴于此，本申请目的在于提供一种工艺简单、成本低廉且精度较高的色转换层及其制造方法。
 技术解决方案
本申请提供一种色转换层制造方法，包括以下步骤：
提供一衬底，在所述衬底上形成嵌段共聚物薄膜；
使所述嵌段共聚物薄膜自组装，得到自组装后的嵌段共聚物薄膜，其中，所述自组装后的嵌段共聚物薄膜具有多个规则排列的主体部以及位于所述多个主体部之间的间隔部；
在所述自组装后的嵌段共聚物薄膜上形成保护层，所述保护层覆盖所述主体部；
除去不被所述保护层覆盖的所述间隔部，以形成多个规则排列的凹部，
向所述凹部中滴入色转换层墨水，待所述色转换层墨水干燥后得到色转换层，其中，所述色转换层墨水包括色转换材料。
在一种实施方式中，所述嵌段共聚物薄膜包括基质和分散于所述基质中的嵌段共聚物，所述主体部由所述嵌段共聚物构成，所述间隔部由所述基质构成。
在一种实施方式中，所述嵌段共聚物薄膜包括基质和分散于所述基质中的嵌段共聚物，所述主体部由所述基质构成，所述间隔部由所述嵌段共聚物构成。
在一种实施方式中，所述保护层与所述主体部具有亲和性，与所述间隔部不具有亲和性。
在一种实施方式中，所述保护层的材料为光刻胶，利用显影液所述除去不被所述保护层覆盖的所述间隔部。
在一种实施方式中，所述显影液选自甲苯、氯苯、苯甲醚、乙酸乙酯的一种或多种。
在一种实施方式中，所述主体部为条状、点阵状或者网格状。
在一种实施方式中，使所述嵌段共聚物薄膜自组装的方法选自热退火、溶剂退火、机械力场和电场的一种或多种。
在一种实施方式中，使所述嵌段共聚物薄膜自组装，得到自组装后的嵌段共聚物薄膜的步骤还包括通过机械力剪应处理使所述嵌段共聚物薄膜预组装。
在一种实施方式中，所述嵌段共聚物选自PI-PCEMA-PtBA、PS-PAA、PS-PB、PS-P2VP、PS-P4VP、PPV-b-PEO、PPV-b-PMMA、PA-b-PS、PI-b-PPE-b-PI、PPE-PI、PS-b-PTH-b-PS、PS-b-PTH、PS-b-PPP中的一种或多种。
在一种实施方式中，提供一衬底，在所述衬底上形成嵌段共聚物薄膜的步骤包括：在所述衬底上涂布质量分数为0.5-20%的聚苯乙烯-b-聚2-乙烯吡啶溶液，待所述聚苯乙烯-b-聚2-乙烯吡啶溶液干燥后形成所述嵌段共聚物薄膜，其中，所述聚苯乙烯-b-聚2-乙烯吡啶溶液的溶剂选自甲苯、氯苯、苯甲醚、乙酸乙酯的一种或多种；
使所述嵌段共聚物薄膜自组装，得到自组装后的嵌段共聚物薄膜的步骤包括：通过机械力剪切处理使所述嵌段共聚物薄膜预组装，再进行溶剂熏蒸处理使所述嵌段共聚物薄膜自组装，其中，所述熏蒸处理中所使用的溶剂选自氯仿、丙酮、二氯乙烷的一种或多种。
在一种实施方式中，一种色转换层，其特征在于，所述色转换层包括具有像素级微结构的薄膜和分散于所述具有像素级微结构的薄膜中的色转换材料，所述薄膜为自组装后的嵌段共聚物薄膜，所述自组装后的嵌段共聚物薄膜中形成有多个规则排列的主体部和位于所述主体部之间的凹部，所述色转换材料位于所述凹部内。
在一种实施方式中，所述主体部由自组装后的嵌段共聚物构成。
在一种实施方式中，所述主体部由自嵌段共聚物薄膜的基质构成。
在一种实施方式中，所述主体部为条状、点阵状或者网格状。
 有益效果
本申请利用嵌段共聚物的自组装效应，能够获得像素级的规整微结构。另利用该像素级的规整微结构可以实现量子点或者钙钛矿材料的精确打印，从而获得高精度的色转换层，并应用于蓝光背光源显示技术。相较于现有技术，本申请的具有像素级微结构薄膜的制造方法工艺简单、成本低廉且精度较高。
 附图说明
为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1（a）至图1（e）为本申请第一实施方式的色转换层的制造方法的步骤示意图。
图2（a）至图2（c）为本申请第一实施方式中的自组装后的嵌段共聚物薄膜的平面示意图。
图3为本申请第三实施方式的显示面板的结构示意图。
 本发明的实施方式
下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。
本申请第一实施方式提供一种色转换层及其制造方法。
该色转换层可以用于蓝色有机发光二极管或者蓝色微发光二极管（Micro Light Emitting Diode Display， Micro LED）作为背光源的显示面板。
该色转换层的制造方法，包括以下步骤：
请参考图1（a），提供一衬底10，在衬底10上形成嵌段共聚物薄膜20。
嵌段共聚物薄膜20包括基质和分散于所述基质中的嵌段共聚物。在此步骤中，能够进行溶液加工的嵌段共聚物均可用作本申请的嵌段共聚物。所使用的嵌段共聚物包括但不限于：PI(聚异戊二烯)-PCEMA(聚甲基丙烯酸-2-肉桂酰乙酯）-PtBA(聚丙烯酸特丁酯)、PS(聚苯乙烯)-PAA(聚丙烯酸)、PS(聚苯乙烯)-PB(聚丁二烯)、PS(聚苯乙烯)-P2VP(聚2-乙烯基吡啶)、PS(聚苯乙烯)-P4VP(聚4-乙烯基吡啶)、PPV(聚对苯乙烯)-b-PEO(聚氧乙烯)、PPV(聚对苯乙烯)-b-PMMA(聚甲基丙烯酸甲酯)、PA(聚乙炔)-b-PS(聚苯乙烯) 、PI(聚异戊二烯)-b-PPE(聚亚苯基亚乙炔)-b-PI (聚异戊二烯)、PPE-PI(聚异戊二烯)、PS-b-PTH(聚噻吩)-b-PS(聚苯乙烯)、PS（聚苯乙烯)-b-PTH(聚噻吩)、PS(聚苯乙烯)-b-PPP(聚对苯)等。
在本申请一实施方式中，嵌段共聚物薄膜20为PS(聚苯乙烯)-P2VP(聚2-乙烯基吡啶)薄膜。在衬底10上形成嵌段共聚物薄膜20的步骤包括：在衬底10上涂布质量分数为0.5-20%的PS(聚苯乙烯)-P2VP(聚2-乙烯基吡啶)溶液，待PS(聚苯乙烯)-P2VP(聚2-乙烯基吡啶)溶液干燥后形成嵌段共聚物薄膜。PS(聚苯乙烯)-P2VP(聚2-乙烯基吡啶)溶液的溶剂可以选自甲苯、氯苯、苯甲醚、乙酸乙酯的一种或多种。
请参考图1（b），使嵌段共聚物薄膜20自组装，得到自组装后的嵌段共聚物薄膜20a。其中，自组装后的嵌段共聚物薄膜20a具有多个规则排列的主体部21a以及位于多个主体部21a之间的间隔部22a。嵌段共聚物自组装后形成的主体部21a和间隔部22a的尺寸均在几十微米左右，自组装后的嵌段共聚物薄膜20a具有像素级的微结构。请参考图2（a），在一个实施方式中，主体部21a可以是条状，沿第一方向间隔排列。请参考图2（b），在另一实施方式中，主体部21a可以是点阵状。请参考图2（c），在又一实施方式中，主体部21a可以是网格状。不同形态的自组装后的嵌段共聚物可以用于不同用途。不同形态的自组装后的嵌段共聚物可以用于不同用途。主体部21a是由嵌段共聚物自组装形成。而间隔部22a由嵌段共聚物薄膜20中的基质构成。
自组装的方法选自热退火、溶剂退火、机械力场和电场的一种或多种。在此步骤中，可以使嵌段共聚物薄膜20预组装，再使嵌段共聚物薄膜20正式自组装。
在一个实施方式中，通过机械力剪切处理使嵌段共聚物薄膜20预组装，再进行溶剂熏蒸处理使嵌段共聚物薄膜20自组装。其中，熏蒸处理中所使用的溶剂选自氯仿、丙酮、二氯乙烷的一种或多种。在此过程中，机械剪切力诱导嵌段共聚物发生取向，即宏观有序地排列；然后使用溶剂蒸汽进行熏蒸（即溶剂退火），溶剂熏蒸可以在不破坏剪切诱导的长程有序性的基础上消除微观的缺陷。
请参考图1（c），在自组装后的嵌段共聚物薄膜20a上形成保护层200，保护层200覆盖主体部21a。在本实施方式中，保护层200与主体部21a，即嵌段共聚物具有亲和性，而与间隔部22a，即基质的亲和性差，或者相反。例如，当嵌段共聚物为亲水性聚合物时，保护层200也为亲水性，基质为亲油性。当在自组装后的嵌段共聚物薄膜20a上形成保护层200时，保护层200聚集在主体部21a并覆盖主体部21a，而不覆盖间隔部22a。
请参考图1（d），除去不被保护层200覆盖的那部分自组装后的嵌段共聚物薄膜20a，即间隔部22a，以在自组装后的嵌段共聚物薄膜20a中形成多个规则排列的凹部22b，得到具有像素级微结构的薄膜20b。保护层200的材料为光刻胶，利用显影液即可除去不被保护层200覆盖的间隔部22a。显影液选自甲苯、氯苯、苯甲醚、乙酸乙酯的一种或多种。
在本申请另一实施方式中，在图1（c）至图1（d）的步骤中，间隔部22a是由嵌段共聚物自组装形成。主体部21a由基质构成。保护层200与基质具有亲和性，而嵌段共聚物的亲和性差，或者相反。在这一实施方式中，凹部22b是通过在自组装后的嵌段共聚物薄膜20a中除去自组装后的嵌段共聚物形成。
请参考图1（e），向凹部22b中滴入色转换层墨水30a，待色转换层墨水30a干燥后得到色转换层1。色转换层墨水30a包括色转换材料30。色转换材料30包括量子点或者钙钛矿。利用红色、绿色和蓝色墨水即可以形成对蓝光进行色转换的色转换层1。色转换层1包括具有像素级微结构的薄膜20b和分散于具有像素级微结构的薄膜20b中的色转换材料30。具有像素级微结构的薄膜20b具有多个规则排列的主体部21a和位于主体部之间的凹部22b，色转换材料30位于凹部内。换句话说，色转换层1包括分隔物以及设置在分隔物间的红色像素单元、绿色像素单元及蓝色像素单元（或者透明像素单元）。
所使用的量子点可为本技术领域常用的核壳结构量子点。其中，核与壳的材料均不受限，例如：可选自由ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、MnSe、HgS、HgSe、HgTe、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、GaSe、InN、InP、InAs、InSb、TlN、TlP、TlAs、TlSb、PbS、PbSe及PbTe所组成的群组的二元半导体材料；或可选自由CdxZn1-xSe、CdxZn1-xS、CuInS2、CuInSe2、AgInS2、AgInSe2、InxGa1-xP、CdxZn1-xSySe1-y所组成的群组的三元以上半导体材料；或可选自由MnSe:Cu、MnSe:Mn、CdS:Cu、CdS:Mn、In2S3:Cu、ZnO:Cu、ZnO:Mn所组成的群组的掺杂型半导体材料。
请参考图3，本申请的色转换层1可用于显示面板100中。该显示面板100包括第一衬底2、第二衬底3和设置于第一衬底2与第二衬底3之间的蓝光发光层4和色转换层1。色转换层1设置于蓝光发光层4的出光侧。在一个实施方式中，色转换层1设置于第一衬底2上。蓝光发光层4设置于第二衬底3上。显示面板100还包括设置于第一衬底2与色转换层1之间的彩色滤光层5。在另一实施方式中，蓝光发光层4和色转换层1可以均设置于第二衬底3上。
蓝光发光层4包括蓝色有机发光二极管器件或者蓝色微发光二极管器件。
色转换层1包括具有像素级微结构的薄膜20b和分散于具有像素级微结构的薄膜20b中的色转换材料30。薄膜20b为自组装后的嵌段共聚物薄膜。具自组装后的嵌段共聚物薄膜中形成有多个规则排列的主体部21a和位于主体部之间的凹部22b，色转换材料30位于凹部内。色转换材料30包括量子点或者钙钛矿。
本申请利用嵌段共聚物的自组装效应，能够获得像素级的规整微结构。另利用该像素级的规整微结构可以实现量子点或者钙钛矿材料的精确打印，从而获得高精度的色转换层，并应用于蓝光背光源显示技术。相较于现有技术，本申请的具有像素级微结构薄膜的制造方法工艺简单、成本低廉且精度较高。
以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (16)

  1. 一种色转换层制造方法，包括以下步骤：
    提供一衬底，在所述衬底上形成嵌段共聚物薄膜；
    使所述嵌段共聚物薄膜自组装，得到自组装后的嵌段共聚物薄膜，其中，所述自组装后的嵌段共聚物薄膜具有多个规则排列的主体部以及位于所述多个主体部之间的间隔部；
    在所述自组装后的嵌段共聚物薄膜上形成保护层，所述保护层覆盖所述主体部；
    除去不被所述保护层覆盖的所述间隔部，以形成多个规则排列的凹部，
    向所述凹部中滴入色转换层墨水，待所述色转换层墨水干燥后得到色转换层，其中，所述色转换层墨水包括色转换材料。
  2. 如权利要求1所述的色转换层制造方法，其中，所述嵌段共聚物薄膜包括基质和分散于所述基质中的嵌段共聚物，所述主体部由所述嵌段共聚物构成，所述间隔部由所述基质构成。
  3. 如权利要求1所述的色转换层制造方法，其中，所述嵌段共聚物薄膜包括基质和分散于所述基质中的嵌段共聚物，所述主体部由所述基质构成，所述间隔部由所述嵌段共聚物构成。
  4. 如权利要求1所述的色转换层制造方法，其中，所述保护层与所述主体部具有亲和性，与所述间隔部不具有亲和性。
  5. 如权利要求1所述的色转换层制造方法，其中，所述保护层的材料为光刻胶，利用显影液所述除去不被所述保护层覆盖的所述间隔部。
  6. 如权利要求5所述的色转换层制造方法，其中，所述显影液选自甲苯、氯苯、苯甲醚、乙酸乙酯的一种或多种。
  7. 如权利要求1所述的色转换层制造方法，其中，所述主体部为条状、点阵状或者网格状。
  8. 如权利要求1所述的色转换层制造方法，其中，使所述嵌段共聚物薄膜自组装的方法选自热退火、溶剂退火、机械力场和电场的一种或多种。
  9. 如权利要求1所述的色转换层制造方法，其中，使所述嵌段共聚物薄膜自组装，得到自组装后的嵌段共聚物薄膜的步骤还包括通过机械力剪应处理使所述嵌段共聚物薄膜预组装。
  10. 如权利要求1所述的色转换层制造方法，其中，所述嵌段共聚物选自PI-PCEMA-PtBA、PS-PAA、PS-PB、PS-P2VP、PS-P4VP、PPV-b-PEO、PPV-b-PMMA、PA-b-PS、PI-b-PPE-b-PI、PPE-PI、PS-b-PTH-b-PS、PS-b-PTH、PS-b-PPP中的一种或多种。
  11. 如权利要求1所述的色转换层制造方法，其中，提供一衬底，在所述衬底上形成嵌段共聚物薄膜的步骤包括：在所述衬底上涂布质量分数为0.5-20%的聚苯乙烯-b-聚2-乙烯吡啶溶液，待所述聚苯乙烯-b-聚2-乙烯吡啶溶液干燥后形成所述嵌段共聚物薄膜，其中，所述聚苯乙烯-b-聚2-乙烯吡啶溶液的溶剂选自甲苯、氯苯、苯甲醚、乙酸乙酯的一种或多种；
    使所述嵌段共聚物薄膜自组装，得到自组装后的嵌段共聚物薄膜的步骤包括：通过机械力剪切处理使所述嵌段共聚物薄膜预组装，再进行溶剂熏蒸处理使所述嵌段共聚物薄膜自组装，其中，所述熏蒸处理中所使用的溶剂选自氯仿、丙酮、二氯乙烷的一种或多种。
  12. 一种色转换层，其特征在于，所述色转换层包括具有像素级微结构的薄膜和分散于所述具有像素级微结构的薄膜中的色转换材料，所述薄膜为自组装后的嵌段共聚物薄膜，所述自组装后的嵌段共聚物薄膜中形成有多个规则排列的主体部和位于所述主体部之间的凹部，所述色转换材料位于所述凹部内。
  13. 如权利要求12所述的色转换层，其中，所述主体部由自组装后的嵌段共聚物构成。
  14. 如权利要求12所述的色转换层，其中，所述主体部由自嵌段共聚物薄膜的基质构成。
  15. 如权利要求12所述的色转换层，其中，所述主体部为条状、点阵状或者网格状。
  16. 如权利要求12所述的色转换层，其中，所述嵌段共聚物选自PI-PCEMA-PtBA、PS-PAA、PS-PB、PS-P2VP、PS-P4VP、PPV-b-PEO、PPV-b-PMMA、PA-b-PS、PI-b-PPE-b-PI、PPE-PI、PS-b-PTH-b-PS、PS-b-PTH、PS-b-PPP中的一种或多种。
PCT/CN2020/084181 2020-03-27 2020-04-10 色转换层及其制造方法 Ceased WO2021189549A1 (zh)

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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
CN112002816B (zh) * 2020-08-07 2022-07-29 深圳市华星光电半导体显示技术有限公司 钙钛矿发光膜层及其制备方法、显示面板
CN112086494B (zh) * 2020-09-14 2021-06-04 南京贝迪新材料科技股份有限公司 一种有机发光显示面板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110220869A1 (en) * 2010-03-09 2011-09-15 Samsung Mobile Display Co., Ltd. Quantum dot organic light emitting device and method of fabricating the same
US20160155784A1 (en) * 2014-12-02 2016-06-02 Samsung Display Co., Ltd. Method for fabricating display device and display device
CN105700056A (zh) * 2014-12-10 2016-06-22 三星显示有限公司 偏振板、包括该偏振板的tft基板及制造该偏振板的方法
CN108281092A (zh) * 2018-01-24 2018-07-13 福州大学 一种微米级led显示光效提取的微结构及其制造方法
CN109256455A (zh) * 2018-09-19 2019-01-22 福州大学 一种光效提取和无像素干扰的全彩化Micro-LED显示结构及其制造方法
CN110295045A (zh) * 2018-03-23 2019-10-01 陈学仕 高效率光转换材料

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101289794B1 (ko) * 2007-04-23 2013-08-07 삼성디스플레이 주식회사 블록 코폴리머를 이용한 선택적 표면처리 방법, 블랙매트릭스 및 그 제조방법, 그리고 노즐 플레이트 및 그제조방법
KR101535227B1 (ko) * 2008-12-31 2015-07-08 삼성전자주식회사 블록 공중합체를 이용한 미세 패턴 형성 방법
CN102915907B (zh) * 2011-08-02 2015-05-13 中芯国际集成电路制造(北京)有限公司 一种半导体器件制作方法
US11251166B2 (en) * 2014-10-31 2022-02-15 eLux, Inc. Fluidic assembly emissive display using axial light emitting diodes (LEDs)
US20180016403A1 (en) * 2014-12-03 2018-01-18 Korea Advanced Institute Of Science And Technology Method for preparing nano-pattern, and nano-pattern prepared therefrom
CN105384952B (zh) * 2015-09-15 2018-01-23 北京航空航天大学 一种利用机械剪切力对嵌段共聚物自组装取向的调控方法
CN105676505A (zh) * 2016-01-07 2016-06-15 武汉华星光电技术有限公司 在液晶面板的绝缘层上形成图案的方法及膜处理方法
WO2019131953A1 (ja) * 2017-12-27 2019-07-04 Jsr株式会社 パターン形成方法及び感放射線性組成物
US11493847B2 (en) * 2019-05-24 2022-11-08 Rohm And Haas Electronic Materials Korea Ltd. Structure for a quantum dot barrier rib and process for preparing the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110220869A1 (en) * 2010-03-09 2011-09-15 Samsung Mobile Display Co., Ltd. Quantum dot organic light emitting device and method of fabricating the same
US20160155784A1 (en) * 2014-12-02 2016-06-02 Samsung Display Co., Ltd. Method for fabricating display device and display device
CN105700056A (zh) * 2014-12-10 2016-06-22 三星显示有限公司 偏振板、包括该偏振板的tft基板及制造该偏振板的方法
CN108281092A (zh) * 2018-01-24 2018-07-13 福州大学 一种微米级led显示光效提取的微结构及其制造方法
CN110295045A (zh) * 2018-03-23 2019-10-01 陈学仕 高效率光转换材料
CN109256455A (zh) * 2018-09-19 2019-01-22 福州大学 一种光效提取和无像素干扰的全彩化Micro-LED显示结构及其制造方法

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