WO2021184445A1 - Oled显示面板及显示装置 - Google Patents

Oled显示面板及显示装置 Download PDF

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Publication number
WO2021184445A1
WO2021184445A1 PCT/CN2020/083490 CN2020083490W WO2021184445A1 WO 2021184445 A1 WO2021184445 A1 WO 2021184445A1 CN 2020083490 W CN2020083490 W CN 2020083490W WO 2021184445 A1 WO2021184445 A1 WO 2021184445A1
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Prior art keywords
layer
light
groove
display panel
oled display
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PCT/CN2020/083490
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English (en)
French (fr)
Inventor
王鹏
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/957,377 priority Critical patent/US20230088073A1/en
Publication of WO2021184445A1 publication Critical patent/WO2021184445A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/868—Arrangements for polarized light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses

Definitions

  • This application relates to the field of display technology, in particular to OLED display panels and display devices.
  • OLED display panels have the characteristics of self-luminescence, high contrast, wide viewing angle, and high response speed. Its working principle is to use ITO transparent electrode and metal electrode as the anode and cathode of the device respectively. Under a certain voltage drive, electrons and holes are injected from the cathode and anode to the electron and hole transport layer respectively, and the electrons and holes pass through the electrons respectively. And the hole transport layer migrates to the light-emitting layer and meets in the light-emitting layer to form excitons and excite the molecules of the light-emitting layer to radiate visible light.
  • the output light After the light emitted by the light-emitting layer in a conventional OLED display panel is output through the encapsulation layer, cover layer, etc., the output light has a specific directionality. Most of the light is emitted vertically from the screen. When viewing the OLED from other angles On the display panel, the original color cannot be seen, but only a blurred image, even all black or all white.
  • the present application provides an OLED display panel and a display device, which can solve the problem that the light emitted from the OLED display panel in the prior art is only perpendicular to a certain angle, especially curved display, which causes the color shift of the large viewing angle of the OLED display panel, and the viewing angle is poor.
  • the present application provides an OLED display panel.
  • the OLED display panel has a light-emitting area and a non-light-emitting area.
  • the OLED display panel includes:
  • the base substrate; the TFT layer is provided on one side of the base substrate; the planarization layer is provided on the side of the TFT layer away from the base substrate, and the planarization layer is formed corresponding to the light-emitting area
  • the extension line of the wall is arranged separately and covers the horizontal part; the light-emitting layer is arranged on the surface of the second groove and is arranged in alignment with the bent part; the cathode layer is arranged on the light-emitting layer as a whole
  • the upper and the surface of the pixel definition layer; the encapsulation layer is
  • the TFT layer includes a light-shielding layer prepared on the surface of the base substrate, a buffer layer prepared on the surface of the base substrate and covering the light-shielding layer, and prepared on the buffer layer Active layer, a first gate insulating layer prepared on the buffer layer and covering the active layer, a first gate prepared on the first gate insulating layer, a first gate prepared on the first gate insulating layer And cover the first gate and the second gate insulating layer, prepare the second gate on the second gate insulating layer, prepare on the second gate insulating layer and cover the interlayer of the second gate An insulating layer, a source electrode and a drain electrode prepared on the interlayer insulating layer; wherein the planarization layer is provided with an anode via hole at a position corresponding to the drain electrode, and one side of the horizontal portion passes through the anode via hole and The drain is electrically connected.
  • the planarization layer includes a first planarization layer and a second planarization layer, and the first groove is located in the second planarization layer.
  • the bending portion includes a first inclined portion, a horizontal connecting portion, and a second inclined portion, wherein the first inclined portion, the horizontal connecting portion, and the second inclined portion The part is integrally formed.
  • the first inclined portion and the second inclined portion are symmetrical about the center line of the horizontal connecting portion.
  • the first inclined portion and the horizontal connecting portion form a first included angle
  • the second inclined portion and the horizontal connecting portion form a second included angle
  • the first The included angle and the second included angle are both 30° to 60°.
  • the inner walls of the first groove and the second groove are both inclined or curved toward the center of the groove.
  • the first groove and the second groove are both a circular arc, an inverted trapezoid, and an inverted triangle.
  • the anode layer is a transparent electrode layer
  • the transparent electrode layer is indium tin oxide or indium zinc oxide.
  • a polarizing layer is provided on the surface of the light-emitting layer, and the polarizing layer is one or a combination of a liquid crystal layer or a polyvinyl alcohol film.
  • a reflective layer is provided between the anode layer and the light-emitting layer, and the reflective layer is a metal film of aluminum, silver or nickel.
  • a display device including an OLED display panel and a protective cover plate located above the OLED display panel, wherein the protective cover plate is a convex lens;
  • the OLED display panel includes: a base substrate , Including a light-emitting area and a non-light-emitting area;
  • the TFT layer is arranged on one side of the base substrate;
  • the planarization layer is arranged on the side of the TFT layer away from the base substrate, and the planarization layer corresponds to the
  • the light-emitting area is formed with a first groove;
  • the anode layer includes a bent portion and a horizontal portion, the bent portion covers the surface of the first groove, and the horizontal portion extends from both sides of the first groove To the non-light-emitting area, and a second groove is formed on the surface of the bent portion corresponding to the light-emitting area;
  • the extension lines of the side walls on both sides of the groove are arranged separately and cover the horizontal part;
  • the convex lens has a convex structure, and the central angle of the convex lens is 0° to 180°.
  • the convex lens has a hollow hemispherical shape.
  • the horizontal included angle close to the central angle of the protective cover is smaller than the horizontal included angle away from the central angle.
  • the material of the convex lens is transparent glass or transparent polyimide film.
  • the TFT layer includes a light-shielding layer prepared on the surface of the base substrate, a buffer layer prepared on the surface of the base substrate and covering the light-shielding layer, and prepared on the buffer layer Active layer, a first gate insulating layer prepared on the buffer layer and covering the active layer, a first gate prepared on the first gate insulating layer, a first gate prepared on the first gate insulating layer And cover the first gate and the second gate insulating layer, prepare the second gate on the second gate insulating layer, prepare on the second gate insulating layer and cover the interlayer of the second gate An insulating layer, a source electrode and a drain electrode prepared on the interlayer insulating layer; wherein the planarization layer is provided with an anode via hole at a position corresponding to the drain electrode, and one side of the horizontal portion passes through the anode via hole and The drain is electrically connected.
  • the bending portion includes a first inclined portion, a horizontal connecting portion, and a second inclined portion, wherein the first inclined portion, the horizontal connecting portion, and the second inclined portion The part is integrally formed.
  • the first inclined portion and the horizontal connecting portion form a first included angle
  • the second inclined portion and the horizontal connecting portion form a second included angle
  • the first The included angle and the second included angle are both 30° to 60°.
  • the surface of the encapsulation layer may also be provided with a polarizing layer, and the polarizing layer is a liquid crystal layer or a polyvinyl alcohol film or a combination of one or two of the film layers.
  • the planarization layer is provided with a groove, the anode layer completely covers the groove, and extends along the sidewall of the groove to a preset length.
  • the light-emitting layer is arranged opposite to the anode layer. When the light-emitting layer emits light, it emits light Light is generated at the bottom and sides of the light-emitting layer in the zone, and it is emitted at a corresponding angle, which increases the light-emitting area and angle of the light-emitting layer, reduces the color drift phenomenon of the large viewing angle of the OLED display panel, and increases the viewing angle.
  • FIG. 1 is a schematic diagram of the working principle of an OLED display panel provided by an embodiment of the application.
  • FIG. 2 is a schematic structural diagram of an OLED display panel provided by an embodiment of the application.
  • FIG. 3 is a schematic diagram of a part of the structure of an OLED display panel provided by an embodiment of the application.
  • FIG. 4 is a schematic structural diagram of a display device according to an embodiment of the application.
  • This application aims to solve the technical problem that the light emitted from the OLED display panel in the prior art is only perpendicular to a certain angle, especially the curved display, which causes the large viewing angle of the OLED display panel to cause color shift and poor viewing angle.
  • This embodiment can solve the technical problem The defect.
  • an embodiment of the present application provides a schematic diagram of the working principle of an OLED display panel 100.
  • the OLED display panel 100 includes an anode layer 101 provided on a substrate, a hole transport layer 102 provided on the anode layer 101, and The light-emitting layer 103 on the hole transport layer 102, the electron transport layer 104 provided on the light-emitting layer 103, and the cathode layer 105 provided on the electron transport layer 104, wherein the external power source passes through a thin, transparent and semiconductor-like layer One end of the tin oxide is connected to the anode layer 101, and the other end is connected to the cathode layer 105.
  • the cathode layer 105 When a DC voltage of 2V to 10V is applied to the anode layer 104, the cathode layer 105 generates electrons and the anode layer 101 generates holes. Under the action of, electrons pass through the electron transport layer 104, holes pass through the hole transport layer 102, and meet in the light-emitting layer 103. The electrons and holes are respectively negatively and positively charged, and they attract each other to excite the organic material in the light-emitting layer 103 to emit light. . Since the cathode layer 105 is transparent, the light emitted by the light-emitting layer 103 can be seen. By controlling the magnitude of the current of the anode layer 101, the light-emitting brightness of the light-emitting layer 103 can be adjusted.
  • the holes of the anode layer 101 and the charge of the cathode layer 105 will combine in the light-emitting layer 103 to emit light.
  • the three primary colors of red, green and blue (R, G, B) can be produced. Basic colors.
  • the output light has a specific directionality. Most of the light is emitted from the screen vertically, when viewed from other angles The OLED display panel cannot see the original color, but can only see the blurred image, and even the technical problem of all black or all white.
  • the anode layer is prepared as a bent part in the pixel groove and bent The part covers part of the side wall of the pixel groove, and the light-emitting layer corresponding to the anode layer is also prepared as a bent light-emitting part. This design increases the light-emitting area and angle of the light-emitting layer, thereby reducing the color drift of the large viewing angle of the OLED display panel. Phenomenon, large viewing angle can be realized.
  • the present application provides an OLED display panel 200.
  • the OLED display panel 200 has a light-emitting area 2011 and a non-light-emitting area 2012.
  • the OLED display panel 200 includes: a base substrate 202; One side of the base substrate 202; the planarization layer 205 is disposed on the side of the TFT layer away from the base substrate 202, and the planarization layer 205 is formed with a first groove 2054 corresponding to the light-emitting area 2011; the anode layer 206 includes a bent portion 2061 And the horizontal portion 2062, the bent portion 2061 covers the surface of the first groove 2054, the horizontal portion 2062 extends from both sides of the first groove 2054 to the non-light emitting area 2012, and the surface of the bent portion 2061 is formed with a second corresponding to the light emitting area 2011 Groove 2063; pixel defining layer 207, located on the side of the planarization layer 205 away from the TFT layer, is provided separately along the extension lines of the
  • the TFT layer includes a light-shielding layer 2031 prepared on the surface of the base substrate 202, a buffer layer 2032 prepared on the surface of the base substrate 202 and covering the light-shielding layer 2031, and an active layer 2033 prepared on the buffer layer 2032 and prepared on the buffer layer.
  • the base substrate 202 is usually a glass substrate, but can also be a substrate of other materials, which is not limited here; a TFT layer is prepared on the base substrate 202.
  • the TFT layer is the top Gate type thin film transistor.
  • the TFT layer includes a light-shielding layer 2031, and the material of the light-shielding layer 2031 is metal, preferably one or more alloys of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti); on the base substrate 202
  • a buffer layer 2032 covering the light-shielding layer 2031 is prepared.
  • the buffer layer 2032 is a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a composite film formed by alternately stacking a silicon oxide film and a silicon nitride film;
  • the active layer 2033 is prepared on 2032 by chemical vapor deposition.
  • the active layer 2033 is deposited on the buffer layer 2032 by magnetron sputtering, metal organic chemical vapor deposition or pulsed laser evaporation; the active layer 2033 After the deposition is completed, an annealing treatment can be carried out.
  • the annealing treatment can be carried out at 400°C in a dry air atmosphere for about 0.5 hours.
  • a wet etching process or a dry etching process using oxalic acid as the etching solution is used to treat the active layer 2033 After etching, after the etching process, the entire metal oxide film will be patterned to form an island-shaped metal oxide semiconductor layer.
  • a first gate insulating layer 2034 is prepared on the active layer 2033, a first gate insulating layer 2035 is formed on the first gate insulating layer 2034 by a physical vapor deposition method, a second gate insulating layer 2036 is prepared on the first gate insulating layer 2034, and a second gate insulating layer 2036 is formed on the second gate insulating layer 2034.
  • the gate insulating layer 2036 forms the second gate 2037 by physical vapor deposition.
  • the first gate insulating layer 2034 and the second gate insulating layer 2036 are both formed by chemical vapor deposition, and then annealed at 400°C in a dry air atmosphere. .
  • the materials of the first gate insulating layer 2034 and the second gate insulating layer 2036 are generally silicon oxide, silicon nitride, silicon oxynitride, or a sandwich structure of the three.
  • the material of the first gate 2035 and the second gate 2037 is a metal material, such as copper (Cu), aluminum (Al), titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr) etc.
  • the planarization layer 205 includes a first planarization layer 2051 and a second planarization layer 2052.
  • the second planarization layer 2052 is located on the surface of the first planarization layer 2051
  • the first groove 2054 is located on the second planarization layer 2052. middle.
  • an anode layer 206 is prepared on the surface of the first groove 2054.
  • the anode layer 206 is preferably a transparent electrode layer, and the transparent electrode layer is indium tin oxide or indium zinc oxide.
  • the anode layer 206 is provided with a second groove 2063 corresponding to the light-emitting area 2011, and the inner walls of the first groove 2054 and the second groove 2063 are both inclined or curved toward the center of the groove.
  • Both the first groove 2054 and the second groove 2063 are preferably in a shape of a circular arc, an inverted trapezoid, and an inverted triangle. In this embodiment, the first groove 2054 and the second groove 2063 are inverted trapezoids.
  • the anode layer 206 includes a bent portion 2061 and a horizontal portion 2062.
  • the bent portion 2062 covers the surface of the first groove 2054.
  • the horizontal portion 2062 extends from both sides of the first groove to the non-light emitting area.
  • the bent portion 2061 includes a first inclined portion 20611, a horizontal connecting portion 20612, and a second inclined portion 20613.
  • the first inclined portion 20611, the horizontal connecting portion 20612, and the second inclined portion 20613 are integrally formed, and the first inclined portion 20611 and the second inclined portion 20613 are symmetrical about the center line of the horizontal connecting portion 20612, the first inclined portion 20611 and the horizontal connecting portion 20612 form a first angle ⁇ 1, and the second inclined portion 20613 and the horizontal connecting portion 20612 form a second angle ⁇ 2, the first included angle ⁇ 1 and the second included angle ⁇ 2 are both 30° to 60°.
  • a reflective layer may be provided between the anode layer 206 and the light-emitting layer 208, and the reflective layer may be a metal film of aluminum, silver or nickel.
  • the surface of the encapsulation layer 2091 may also be provided with a polarizing layer and a polarizing layer. It is a liquid crystal layer or a polyvinyl alcohol film or a combination of two or more layers.
  • the anode layer 206, the hole transport layer (not shown in FIG. 2), the light emitting layer 208, the electron transport layer (not shown in FIG. 2), and the cathode layer 209 are all bent in multiple sections, and the top surfaces are all upwardly open , The width of the top surface of the opening is greater than the width of the bottom surface of the opening.
  • the cathode layer 209 is laid on the entire layer of the OLED display panel 200, covering the light-emitting layer 208 and the pixel defining layer 207.
  • the light-emitting layer 208, and the electron transport layer ( 2) and the cathode layer 209 is not limited to bends in oblique lines or straight sections, and can also be bent in curved lines or arcs.
  • the light-emitting layer 208 emits light
  • the light-emitting layer 208 generates light and emits it at a corresponding angle. After multiple curved arcs are continuous, that is, an uneven surface, the emitted light will be refracted and scattered, and the exit angle of the light will be larger.
  • Increase the light-emitting area and angle of the light-emitting layer 208 reduce the color drift phenomenon of the large viewing angle of the OLED display panel, and increase the viewing angle.
  • the display device 300 includes: the above-mentioned OLED display panel 200, and a protective cover 301 located above the OLED display panel 200.
  • the protective cover 301 is a convex lens, wherein , The material of the convex lens is transparent glass or transparent polyimide film.
  • the convex lens has a convex structure, and the central angle of the convex lens is 0° to 180°.
  • the convex lens has a hollow hemispherical shape.
  • the horizontal included angle close to the central corner of the protective cover 301 is smaller than the horizontal included angle away from the central corner.
  • the planarization layer in the present application is provided with grooves, the anode layer completely covers the grooves, and extends along the sidewalls of the grooves and extends upward to a preset length.
  • the light emitting layer is arranged opposite to the anode layer, when the light emitting layer When light is emitted, the bottom and sides of the light-emitting layer in the light-emitting area will generate light, and the light will be emitted at a corresponding angle, increasing the light-emitting area and angle of the light-emitting layer, reducing the color drift phenomenon of the large viewing angle of the OLED display panel. Viewing angle.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种OLED显示面板（100，200）及显示装置（300），平坦化层（205）形成凹槽（2054），阳极层（206）完全覆盖凹槽（2054），且沿着凹槽（2054）的侧壁并向上延伸到预设长度，发光层（208）相对阳极层（206）设置，当发光层（208）出射光线时，发光区（2011）中发光层（208）的底部和侧部均会产生光线，且以相应的角度出射，增大发光层（208）的出光面积和角度，降低OLED显示面板（100，200）显示屏大视角颜色漂移现象，增大观看视角。

Description

OLED显示面板及显示装置 技术领域
本申请涉及显示技术领域，尤其涉及OLED显示面板及显示装置。
 背景技术
有机电致发光二极管(Organic Light Emitting Diode，简称OLED)显示面板具有自发光，高对比度、宽视角、高响应速度等特点。其工作原理是利用ITO透明电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子和空穴传输层，电子和空穴分别经过电子和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光层分子激发，辐射出可见光。
常规OLED显示面板中发光层发射的光线经过封装层、盖板层等输出之后，输出的光线便具有特定的方向性，大多数光都是从屏幕中垂直射出来的，当从其他角度观看OLED显示面板，便不能看到原本的颜色，只能看到模糊的图像，甚至全黑或全白。
综上所述，需要提出一种OLED显示面板，以解决现有技术中OLED显示面板中出射光仅垂直于某个角度，尤其是曲面显示，造成OLED显示面板显示屏大视角颜色漂移，视角较差的技术问题。
 技术问题
本申请提供一种OLED显示面板及显示装置，能够解决现有技术中OLED显示面板中出射光仅垂直于某个角度，尤其是曲面显示，造成OLED显示面板显示屏大视角颜色漂移，视角较差的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种OLED显示面板，所述OLED显示面板具有发光区和非发光区，所述OLED显示面板包括：
衬底基板；TFT层，设置在所述衬底基板的一侧；平坦化层，设置在所述TFT层远离所述衬底基板的一侧，所述平坦化层对应所述发光区形成有第一凹槽；阳极层，包括弯折部和水平部，所述弯折部覆盖于所述第一凹槽表面，所述水平部由所述第一凹槽两侧延伸至所述非发光区，且所述弯折部表面对应所述发光区形成有第二凹槽；像素定义层，位于所述平坦化层远离所述TFT层一侧，沿着所述第二凹槽两侧侧壁的延长线分离设置，且覆盖所述水平部；发光层，设置在所述第二凹槽表面上，且与所述弯折部对位设置；阴极层，整层设置在所述发光层上和所述像素定义层表面；封装层，设置在所述阴极层表面。
根据本申请一优选实施例，所述TFT层包括制备于所述衬底基板表面的遮光层、制备于所述衬底基板表面且覆盖所述遮光层的缓冲层、制备于所述缓冲层上有源层、制备于所述缓冲层上且覆盖所述有源层的第一栅绝缘层、制备于所述第一栅绝缘层上第一栅极、制备于所述第一栅绝缘层上且覆盖所述第一栅极第二栅绝缘层、制备于所述第二栅绝缘层上第二栅极、制备于所述第二栅绝缘层上且覆盖所述第二栅极的层间绝缘层、制备于层间绝缘层上源极和漏极；其中，所述平坦化层对应所述漏极的位置设置有阳极过孔，所述水平部中一侧通过所述阳极过孔与所述漏极电性连接。
根据本申请一优选实施例，所述平坦化层包括第一平坦化层和第二平坦化层，所述第一凹槽位于所述第二平坦化层中。
根据本申请一优选实施例，所述弯折部包括第一倾斜部、水平连接部、以及第二倾斜部，其中，所述第一倾斜部、所述水平连接部、以及所述第二倾斜部为一体成型。
根据本申请一优选实施例，所述第一倾斜部和所述第二倾斜部关于所述水平连接部中心线对称。
根据本申请一优选实施例，所述第一倾斜部与所述水平连接部形成有第一夹角，所述第二倾斜部与所述水平连接部形成有第二夹角，所述第一夹角和所述第二夹角均为30°至60°。
根据本申请一优选实施例，所述第一凹槽和所述第二凹槽的内壁均向所述凹槽的中心倾斜或弯曲。
根据本申请一优选实施例，所述第一凹槽和所述第二凹槽均为圆弧、倒梯形、倒三角形中一种图形。
根据本申请一优选实施例，所述阳极层为透明电极层，所述透明电极层为氧化铟锡或氧化铟锌。
根据本申请一优选实施例，所述发光层表面设置有偏光层，所述偏光层为液晶层或聚乙烯醇膜中一种或两种组合膜层。
根据本申请一优选实施例，所述阳极层和所述发光层之间设置有反射层，所述反射层为铝、银或镍金属膜。
根据本申请的目的，提供一种显示装置，包括OLED显示面板、以及位于所述OLED显示面板上方的保护盖板，其中，所述保护盖板为凸透镜；所述OLED显示面板包括：衬底基板，包括发光区和非发光区；TFT层，设置在所述衬底基板的一侧；平坦化层，设置在所述TFT层远离所述衬底基板的一侧，所述平坦化层对应所述发光区形成有第一凹槽；阳极层，包括弯折部和水平部，所述弯折部覆盖于所述第一凹槽表面，所述水平部由所述第一凹槽两侧延伸至所述非发光区，且所述弯折部表面对应所述发光区形成有第二凹槽；像素定义层，位于所述平坦化层远离所述TFT层一侧，沿着所述第二凹槽两侧侧壁的延长线分离设置，且覆盖所述水平部；发光层，设置在所述第二凹槽表面上，且与所述弯折部对位设置；阴极层，整层设置在所述发光层上和所述像素定义层表面；以及封装层，设置在所述阴极层表面。
根据本申请一优选实施例，所述凸透镜为凸起结构，且所述凸透镜的圆心角为0°到180°。
根据本申请一优选实施例，所述凸透镜为中空的半球状。
根据本申请一优选实施例，靠近所述保护盖板的圆心角位置的水平夹角小于远离所述圆心角位置的水平夹角。
根据本申请一优选实施例，所述凸透镜的材料为透明玻璃或者透明聚酰亚胺薄膜。
根据本申请一优选实施例，所述TFT层包括制备于所述衬底基板表面的遮光层、制备于所述衬底基板表面且覆盖所述遮光层的缓冲层、制备于所述缓冲层上有源层、制备于所述缓冲层上且覆盖所述有源层的第一栅绝缘层、制备于所述第一栅绝缘层上第一栅极、制备于所述第一栅绝缘层上且覆盖所述第一栅极第二栅绝缘层、制备于所述第二栅绝缘层上第二栅极、制备于所述第二栅绝缘层上且覆盖所述第二栅极的层间绝缘层、制备于层间绝缘层上源极和漏极；其中，所述平坦化层对应所述漏极的位置设置有阳极过孔，所述水平部中一侧通过所述阳极过孔与所述漏极电性连接。
根据本申请一优选实施例，所述弯折部包括第一倾斜部、水平连接部、以及第二倾斜部，其中，所述第一倾斜部、所述水平连接部、以及所述第二倾斜部为一体成型。
根据本申请一优选实施例，所述第一倾斜部与所述水平连接部形成有第一夹角，所述第二倾斜部与所述水平连接部形成有第二夹角，所述第一夹角和所述第二夹角均为30°至60°。
根据本申请一优选实施例，所述封装层表面还可以设置有偏光层，所述偏光层为液晶层或聚乙烯醇膜中一种或两种组合膜层。
 有益效果
本申请中平坦化层设置有凹槽，阳极层完全覆盖该凹槽，且沿着凹槽的侧壁并向上延伸到预设长度，发光层相对阳极层设置，当发光层出射光线时，发光区中发光层的底部和侧部均会产生光线，且以相应的角度出射，增大发光层的出光面积和角度，降低OLED显示面板显示屏大视角颜色漂移现象，增大观看视角。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供一种OLED显示面板工作原理示意图。
图2为本申请实施例提供一种OLED显示面板结构示意图。
图3为本申请实施例提供一种OLED显示面板部分结构示意图。
图4为本申请实施例提供一种显示装置结构示意图。
本申请的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请针对能够解决现有技术中OLED显示面板中出射光仅垂直于某个角度，尤其是曲面显示，造成OLED显示面板显示屏大视角颜色漂移，视角较差的技术问题，本实施例能够解决该缺陷。
如图1所示，本申请实施例提供一种OLED显示面板100工作原理示意图，OLED显示面板100包括设于基板上的阳极层101、设于阳极层101上的空穴传输层102、设于空穴传输层102上的发光层103、设于发光层103上的电子传输层104、设于电子传输层104上的阴极层105，其中，外界电源通过一层薄而透明且具有半导体特性的锢锡氧化物一端与阳极层101相连，另一端与阴极层105相连，当给阳极层104加上2V至10V的直流电压时，阴极层105产生电子，阳极层101产生空穴，在电场力的作用下，电子穿过电子传输层104，空穴穿过空穴传输层102，在发光层103相遇，电子和空穴分别带负电和正电，它们相互吸引，激发发光层103中有机材料发光。由于阴极层105是透明的，可以看到发光层103发出的光线。通过控制阳极层101电流的大小，可调整发光层103发光亮度，电流越大，亮度越高，反之越暗。当输入电压时，阳极层101空穴与阴极层105电荷就会在发光层103中结合而发光，依其不同的配方，可产生红、绿、蓝（R、G、B）三基色，构成基本色彩。
针对常规OLED显示面板中发光层发射的光线经过封装层、盖板层等输出之后，输出的光线便具有特定的方向性，大多数光都是从屏幕中垂直射出来的，当从其他角度观看OLED显示面板，便不能看到原本的颜色，只能看到模糊的图像，甚至全黑或全白的技术问题，本申请实施将阳极层在像素凹槽中制备成弯折部，且弯折部覆盖部分像素凹槽的侧壁，相对应阳极层设置的发光层也制备成弯折发光部，这种设计增大发光层的出光面积和角度，从而降低OLED显示面板显示屏大视角颜色漂移现象，可以实现大视角观看。
具体地，如图2所示，本申请提供一种OLED显示面板200，OLED显示面板200具有发光区2011和非发光区2012，OLED显示面板200包括：衬底基板202；TFT层，设置在衬底基板202的一侧；平坦化层205，设置在TFT层远离衬底基板202的一侧，平坦化层205对应发光区2011形成有第一凹槽2054；阳极层206，包括弯折部2061和水平部2062，弯折部2061覆盖于第一凹槽2054表面，水平部2062由第一凹槽2054两侧延伸至非发光区2012，且弯折部2061表面对应发光区2011形成有第二凹槽2063；像素定义层207，位于平坦化层205远离TFT层一侧，沿着第二凹槽2063两侧侧壁的延长线分离设置，且覆盖水平部2062；发光层208，设置在第二凹槽2063表面上，且与弯折部2061对位设置；阴极层209，整层设置在发光层208上和像素定义层207表面；封装层2091，设置在阴极层209表面。
具体地，TFT层包括制备于衬底基板202表面的遮光层2031、制备于衬底基板202表面且覆盖遮光层2031的缓冲层2032、制备于缓冲层2032上有源层2033、制备于缓冲层2032上且覆盖有源层2033的第一栅绝缘层2034、制备于第一栅绝缘层2034上第一栅极2035、制备于第一栅绝缘层2034上且覆盖第一栅极2035的第二栅绝缘层2036、制备于第二栅绝缘层2036上第二栅极2037、制备于第二栅绝缘层2036上且覆盖第二栅极2037的层间绝缘层2038、制备于层间绝缘层2038上源极2039和漏极2040；其中，平坦化层205对应漏极2040的位置设置有阳极过孔2053，水平部2062中一侧20621通过阳极过孔2053与漏极2040电性连接，源极2039通过源极接触孔与有源层2033中源极掺杂区电性连接，漏极2040通过漏极接触孔与有源层2033中漏极掺杂区电性连接。
本实施例中衬底基板202，衬底基板202通常为玻璃基板，也可为其他材质的基板，在此不做限制；在衬底基板202上制备TFT层，本实施例中TFT层为顶栅型薄膜晶体管。
TFT层包括遮光层2031，遮光层2031的材料为金属，优选钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的一种或多种的合金；在衬底基板202上制备覆盖遮光层2031的缓冲层2032，缓冲层2032为氧化硅(SiOx)薄膜、氮化硅(SiNx)薄膜、或者氧化硅薄膜与氮化硅薄膜交替层叠设置形成的复合薄膜；在缓冲层2032上通过化学气相沉积法制备有源层2033，有源层2033是透过磁控溅镀法、金属有机化学气相沉积法或脉冲雷射蒸镀法沉积在缓冲层2032上；有源层2033沉积完成后，再进行退火处理，可以在400℃干燥空气氛围下退火处理约0.5小时，退火处理完成后，采用草酸作为刻蚀液的湿法蚀刻工艺或干法刻蚀工艺对有源层2033进行刻蚀，经过蚀刻制程后，整层的金属氧化物薄膜将图案化形成岛状的金属氧化物半导体层。
在有源层2033上制备第一栅绝缘层2034，第一栅绝缘层2034经物理气相沉积方法形成第一栅极2035，在第一栅绝缘层2034制备第二栅绝缘层2036，在第二栅绝缘层2036经物理气相沉积方法形成第二栅极2037，第一栅绝缘层2034和第二栅绝缘层2036均是通过化学气相沉积法形成的，然后在400℃干燥空气氛围下退火处理得到。第一栅绝缘层2034和第二栅绝缘层2036的材料一般为氧化硅、氮化硅、氮氧化硅、或者三者的夹层结构等。第一栅极2035和第二栅极2037的材料为金属材料，例如是铜(Cu)、铝(Al)、钛(Ti)、钽(Ta)、钨(W)、钼(Mo)、铬(Cr)等。
本实施例中平坦化层205包括第一平坦化层2051和第二平坦化层2052，第二平坦化层2052位于第一平坦化层2051表面，第一凹槽2054位于第二平坦化层2052中。接着在第一凹槽2054表面制备阳极层206，阳极层206优选为透明电极层，透明电极层为氧化铟锡或氧化铟锌。阳极层206对应发光区2011设置第二凹槽2063，第一凹槽2054和第二凹槽2063的内壁均向凹槽的中心倾斜或弯曲。第一凹槽2054和第二凹槽2063均优选为圆弧、倒梯形、倒三角形中一种图形。本实施例中第一凹槽2054和第二凹槽2063为倒梯形。
如图2和图3所示，阳极层206包括弯折部2061和水平部2062，弯折部2062覆盖于第一凹槽2054表面，水平部2062由第一凹槽两侧延伸至非发光区。弯折部2061包括第一倾斜部20611、水平连接部20612、以及第二倾斜部20613，其中，第一倾斜部20611、水平连接部20612、以及第二倾斜部20613为一体成型，第一倾斜部20611和第二倾斜部20613关于水平连接部20612中心线对称，第一倾斜部20611与水平连接部20612形成有第一夹角θ1，第二倾斜部20613与水平连接部20612形成有第二夹角θ2，第一夹角θ1和第二夹角θ2均为30°至60°。
为了增加OLED显示面板100的显示视角，阳极层206和发光层208之间还可以设置有反射层，反射层为铝、银或镍金属膜，封装层2091表面还可以设置有偏光层，偏光层为液晶层或聚乙烯醇膜中一种或两种组合膜层。
本实施例中阳极层206、空穴传输层（图2未画出）、发光层208、电子传输层（图2未画出）及阴极层209均为多段弯折，顶表面均为向上开口，开口的顶面宽度均大于开口的底面宽度。阴极层209在OLED显示面板200整层铺设，覆盖发光层208和像素定义层207，本实施例中阳极层206、空穴传输层（图2未画出）、发光层208、电子传输层（图2未画出）及阴极层209并不仅仅限于斜线或直线段弯折，还可以为曲线、或圆弧弯折。当发光层208出射光线时，发光层208产生光线，且以相应的角度出射，经过多段弯曲的弧面连续即凹凸不平的面，出射的光线会发生折射和散射，光线的出射角度会更大，增大发光层208的出光面积和角度，降低OLED显示面板显示屏大视角颜色漂移现象，增大观看视角。
依据本申请的目的，还提供一种显示装置，如图4所示，显示装置300包括：上述OLED显示面板200、以及位于OLED显示面板200上方保护盖板301，保护盖板301为凸透镜，其中，该凸透镜的材料为透明玻璃或者透明聚酰亚胺薄膜。该凸透镜为凸起结构，且凸透镜的圆心角为0°到180°，凸透镜为中空的半球状，靠近保护盖板301圆心角位置的水平夹角小于远离圆心角位置的水平夹角。
本申请的有益效果：本申请中平坦化层设置有凹槽，阳极层完全覆盖凹槽，且沿着凹槽的侧壁并向上延伸到预设长度，发光层相对阳极层设置，当发光层出射光线时，发光区中发光层的底部和侧部均会产生光线，且以相应的角度出射，增大发光层的出光面积和角度，降低OLED显示面板显示屏大视角颜色漂移现象，增大观看视角。
综上，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED显示面板，所述OLED显示面板具有发光区和非发光区，其中，所述OLED显示面板包括：
    衬底基板，包括发光区和非发光区；
    TFT层，设置在所述衬底基板的一侧；
    平坦化层，设置在所述TFT层远离所述衬底基板的一侧，所述平坦化层对应所述发光区形成有第一凹槽；
    阳极层，包括弯折部和水平部，所述弯折部覆盖于所述第一凹槽表面，所述水平部由所述第一凹槽两侧延伸至所述非发光区，且所述弯折部表面对应所述发光区形成有第二凹槽；
    像素定义层，位于所述平坦化层远离所述TFT层一侧，沿着所述第二凹槽两侧侧壁的延长线分离设置，且覆盖所述水平部；
    发光层，设置在所述第二凹槽表面上，且与所述弯折部对位设置；
    阴极层，整层设置在所述发光层上和所述像素定义层表面；
    封装层，设置在所述阴极层表面。
  2. 根据权利要求1所述的OLED显示面板，其中，所述TFT层包括制备于所述衬底基板表面的遮光层、制备于所述衬底基板表面且覆盖所述遮光层的缓冲层、制备于所述缓冲层上有源层、制备于所述缓冲层上且覆盖所述有源层的第一栅绝缘层、制备于所述第一栅绝缘层上第一栅极、制备于所述第一栅绝缘层上且覆盖所述第一栅极第二栅绝缘层、制备于所述第二栅绝缘层上第二栅极、制备于所述第二栅绝缘层上且覆盖所述第二栅极的层间绝缘层、制备于层间绝缘层上源极和漏极；其中，所述平坦化层对应所述漏极的位置设置有阳极过孔，所述水平部中一侧通过所述阳极过孔与所述漏极电性连接。
  3. 根据权利要求1所述的OLED显示面板，其中，所述平坦化层包括第一平坦化层和第二平坦化层，所述第一凹槽位于所述第二平坦化层中。
  4. 根据权利要求1所述的OLED显示面板，其中，所述弯折部包括第一倾斜部、水平连接部、以及第二倾斜部，其中，所述第一倾斜部、所述水平连接部、以及所述第二倾斜部为一体成型。
  5. 根据权利要求4所述的OLED显示面板，其中，所述第一倾斜部和所述第二倾斜部关于所述水平连接部中心线对称。
  6. 根据权利要求4所述的OLED显示面板，其中，所述第一倾斜部与所述水平连接部形成有第一夹角，所述第二倾斜部与所述水平连接部形成有第二夹角，所述第一夹角和所述第二夹角均为30°至60°。
  7. 根据权利要求1所述的OLED显示面板，其中，所述第一凹槽和所述第二凹槽的内壁均向所述凹槽的中心倾斜或弯曲。
  8. 根据权利要求7所述的OLED显示面板，其中，所述第一凹槽和所述第二凹槽均为圆弧、倒梯形、倒三角形中一种图形。
  9. 根据权利要求1所述的OLED显示面板，其中，所述阳极层为透明电极层，所述透明电极层为氧化铟锡或氧化铟锌。
  10. 根据权利要求1所述的OLED显示面板，其中，所述发光层表面设置有偏光层，所述偏光层为液晶层或聚乙烯醇膜中一种或两种组合膜层。
  11. 根据权利要求1所述的OLED显示面板，其中，所述阳极层和所述发光层之间设置有反射层，所述反射层为铝、银或镍金属膜。
  12. 一种显示装置，其包括OLED显示面板、以及位于所述OLED显示面板上方的保护盖板，其中，所述保护盖板为凸透镜；所述OLED显示面板具有发光区和非发光区，所述OLED显示面板包括：衬底基板；TFT层，设置在所述衬底基板的一侧；平坦化层，设置在所述TFT层远离所述衬底基板的一侧，所述平坦化层对应所述发光区形成有第一凹槽；阳极层，包括弯折部和水平部，所述弯折部覆盖于所述第一凹槽表面，所述水平部由所述第一凹槽两侧延伸至所述非发光区，且所述弯折部表面对应所述发光区形成有第二凹槽；像素定义层，位于所述平坦化层远离所述TFT层一侧，沿着所述第二凹槽两侧侧壁的延长线分离设置，且覆盖所述水平部；发光层，设置在所述第二凹槽表面上，且与所述弯折部对位设置；阴极层，整层设置在所述发光层上和所述像素定义层表面；以及封装层，设置在所述阴极层表面。
  13. 根据权利要求12所述的显示装置，其中，所述凸透镜为凸起结构，且所述凸透镜的圆心角为0°到180°。
  14. 根据权利要求13所述的显示装置，其中，所述凸透镜为中空的半球状。
  15. 根据权利要求14所述的显示装置，其中，靠近所述保护盖板的圆心角位置的水平夹角小于远离所述圆心角位置的水平夹角。
  16. 根据权利要求12所述的显示装置，其中，所述凸透镜的材料为透明玻璃或者透明聚酰亚胺薄膜。
  17. 根据权利要求12所述的显示装置，其中，所述TFT层包括制备于所述衬底基板表面的遮光层、制备于所述衬底基板表面且覆盖所述遮光层的缓冲层、制备于所述缓冲层上有源层、制备于所述缓冲层上且覆盖所述有源层的第一栅绝缘层、制备于所述第一栅绝缘层上第一栅极、制备于所述第一栅绝缘层上且覆盖所述第一栅极第二栅绝缘层、制备于所述第二栅绝缘层上第二栅极、制备于所述第二栅绝缘层上且覆盖所述第二栅极的层间绝缘层、制备于层间绝缘层上源极和漏极；其中，所述平坦化层对应所述漏极的位置设置有阳极过孔，所述水平部中一侧通过所述阳极过孔与所述漏极电性连接。
  18. 根据权利要求12所述的显示装置，其中，所述弯折部包括第一倾斜部、水平连接部、以及第二倾斜部，其中，所述第一倾斜部、所述水平连接部、以及所述第二倾斜部为一体成型。
  19. 根据权利要求17所述的显示装置，其中，所述第一倾斜部与所述水平连接部形成有第一夹角，所述第二倾斜部与所述水平连接部形成有第二夹角，所述第一夹角和所述第二夹角均为30°至60°。
  20. 根据权利要求17所述的显示装置，其中，所述封装层表面还可以设置有偏光层，所述偏光层为液晶层或聚乙烯醇膜中一种或两种组合膜层。
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