WO2021181818A1 - Élément d'imagerie à semi-conducteurs et dispositif électronique - Google Patents

Élément d'imagerie à semi-conducteurs et dispositif électronique Download PDF

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Publication number
WO2021181818A1
WO2021181818A1 PCT/JP2020/047960 JP2020047960W WO2021181818A1 WO 2021181818 A1 WO2021181818 A1 WO 2021181818A1 JP 2020047960 W JP2020047960 W JP 2020047960W WO 2021181818 A1 WO2021181818 A1 WO 2021181818A1
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Prior art keywords
filter
solid
image sensor
state image
incident direction
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PCT/JP2020/047960
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English (en)
Japanese (ja)
Inventor
戸田　淳
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2021181818A1 publication Critical patent/WO2021181818A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only

Definitions

  • This technology relates to a solid-state image sensor. More specifically, the present invention relates to a solid-state image sensor and an electronic device including a filter having a periodic pattern array.
  • a technique of performing a plurality of spectroscopy in multiple bands of three or more primary colors of light by using a filter such as a surface plasmon resonance filter is known.
  • a filter such as a surface plasmon resonance filter
  • a plurality of spectra can be performed by providing a filter having a periodic pattern array.
  • the spectral shape changes depending on the incident direction, so that the wavelength accuracy of the multi-spectral spectrum may deteriorate.
  • the half-value width after signal processing increases or the peak wavelength shift occurs in the multi-spectrum as the multi-spectral. It may cause deterioration of accuracy.
  • This technology was created in view of such a situation, and aims to obtain a spectral spectrum with high spectral accuracy in a solid-state image sensor.
  • the present technology has been made to solve the above-mentioned problems, and the first side surface thereof is a semiconductor substrate on which a photodiode is formed and a multilayer structure laminated on the light receiving surface side of the semiconductor substrate.
  • the incident direction of the main light beam and the rotation angle of the periodic pattern array coincide with each other in at least one pixel included in the predetermined pixel group as a unit. It may be. This has the effect of absorbing changes in the spectral shape of the main light beam depending on the incident direction for each pixel.
  • the filter may make the incident direction of the main light ray seen from the center of the imaging surface coincide with the rotation angle of the periodic pattern array. This has the effect of absorbing changes in the spectral shape depending on the incident direction of the main light beam.
  • the filter may have different periodic pitches of the periodic pattern array depending on the incident direction of the main light beam. This has the effect of correcting the long wavelength shift of the peak wavelength of the spectrum.
  • the filter may have different periods so as to be proportional to the cosine of the angle of the incident direction of the main ray. This has the effect of approximately correcting the long wavelength shift of the peak wavelength of the spectrum.
  • the filter may be a plasmon resonance filter.
  • the filter may be a propagation type surface plasmon resonance filter or a localized surface plasmon resonance filter.
  • a moth-eye structure arranged on the outermost surface of the upper layer than the above filter may be further provided. This has the effect of reducing surface reflections.
  • the filter performs a plurality of spectroscopys in multiple bands of three or more primary colors of light. This has the effect of being applied to applications using multiple spectra.
  • FIG. 1 is a cross-sectional view showing an example of the device structure of the solid-state image sensor 100 according to the embodiment of the present technology.
  • the solid-state image sensor 100 has a plurality of pixels arranged in an array.
  • the device structure of this solid-state imaging device is a semiconductor substrate 110, an antireflection film 120, a silicon oxide film 130, a light-shielding film 140, a filter 200, a silicon oxide film 150, a silicon oxynitride film 160, and silicon nitride. It has a multilayer structure in which a film 170, a silicon oxynitride film 180, and a silicon oxide film 190 are laminated. A PN junction photodiode is formed on the semiconductor substrate 110 for each pixel.
  • the antireflection film 120 prevents reflection of light on the surface of the semiconductor substrate 110, and is configured by, for example, forming a film of hafnium oxide, silicon nitride, or the like on the surface of the semiconductor substrate 110.
  • the silicon oxide films 130, 150 and 190 are insulating films having an insulating property, and are formed of, for example, SiO 2 .
  • the light-shielding film 140 shields light from leaking between pixels to prevent color mixing to adjacent pixels.
  • the light-shielding film 140 is formed by, for example, W.
  • the filter 200 is an optical element for performing spectroscopy. In this embodiment, it is assumed that a plasmon resonance filter is used as the filter 200.
  • the silicon oxynitride films 160 and 180 are antireflection layers, and are formed of, for example, SION.
  • the silicon nitride film 170 is a passivation film for protecting the filter 200 from oxidation.
  • the silicon nitride film 170 is formed of, for example, Si 3 N 4 .
  • OCL On Chip Lens
  • FIG. 2 is a diagram showing an example of the incident direction of the main light beam of the solid-state image sensor 100 according to the embodiment of the present technology.
  • FIG. 3 is a diagram showing an example of the surface shape of the propagation type surface plasmon resonance filter according to the embodiment of the present technology.
  • the propagation type surface plasmon resonance filter which is a kind of plasmon resonance filter, has a configuration in which a plurality of holes are periodically provided in the metal film.
  • the plurality of holes function as a diffraction grating, and the spectral characteristics can be controlled by controlling the period and the hole diameter of the holes.
  • the direction of a nearby hole is defined as the X direction with respect to a certain hole. That is, the X direction is set every 60 degrees in one cycle with one as a reference.
  • the direction in the middle of the X direction is the Y direction.
  • the Y direction is the Y direction every 60 degrees in one cycle with one as a reference.
  • the half-value width after signal processing increases or peaks as multi-spectroscopy in which spectroscopy is performed in multiple bands of three or more primary colors of light. A phenomenon occurs in which a wavelength shift occurs. As a result, the accuracy of multi-spectroscopy may deteriorate.
  • 4 to 6 are diagrams showing an example of the spectral characteristics of the surface plasmon resonance filter.
  • the incident angle ⁇ is 25 degrees in FIG. 4, 30 degrees in FIG. 5, and 35 degrees in FIG.
  • FIG. 7 is a diagram showing an example of a pattern of a propagation type surface plasmon resonance filter according to an embodiment of the present technology.
  • the propagation type surface plasmon resonance filter has a configuration in which a plurality of holes 220 are periodically provided in a film of a metal 210.
  • a metal 210 for example, AlCu is assumed, but it may be a metal such as pure Al, Au, or Ag.
  • the thickness of this propagation type surface plasmon resonance filter is, for example, about 150 nm.
  • a dielectric such as an oxide film may be present in the upper and lower layers and the holes 220 of this propagation type surface plasmon resonance filter.
  • a dielectric such as an oxide film may be present in the upper and lower layers and the holes 220 of this propagation type surface plasmon resonance filter.
  • the structure of the hole 220 is circular here, it may have any shape such as a square, a rectangle, or a hexagon.
  • the rhombic lattice is used as the unit lattice as the arrangement of the holes 220 of the propagation type surface plasmon resonance filter. Then, each pixel on the imaging surface is rotated and arranged so that the incident direction of the main light beam and the positional relationship of the arrangement of the rhombic lattice are always constant. That is, it includes an arrangement in which the periodic pattern array of the unit cell is rotated according to the incident direction of the main light beam. As a result, the incident direction of the main light beam and the rotation angle of the periodic pattern array coincide with each other when viewed from the center of the imaging surface. By changing the orientation of the filter array of each pixel by rotating it little by little with respect to the imaging surface, it is possible to obtain multi-spectral spectral characteristics that are constant regardless of the image plane position and the incident direction of the main light beam.
  • FIG. 8 is a diagram showing another example of the pattern of the propagation type surface plasmon resonance filter in the embodiment of the present technology.
  • the rhombus array was described, but as in this example, even in the case of a square array, by rotating the orientation in the same manner, it is possible to obtain the spectral characteristics of multi-spectroscopy that are always constant.
  • FIG. 9 is a diagram showing an example of a unit cell of the filter 200 according to the embodiment of the present technology.
  • a in the figure shows an example when the unit cell is a square array.
  • Reference numeral b in the figure shows an example in which the unit cell is a rectangular array.
  • c shows an example when the unit cell is a parallelogram array.
  • FIG. 10 is a diagram showing an example of the surface shape of the localized surface plasmon resonance filter according to the embodiment of the present technology.
  • the localized surface plasmon resonance filter has a structure in which the metal 240 is scattered on the dielectric 230.
  • the dielectric 230 for example, SiO 2 is assumed.
  • the arrangement of the metals 240 is used as the unit cell.
  • the periodic pattern array of the unit cell is provided by rotating it according to the incident direction of the main ray.
  • the periodic pattern array of the unit cell of the filter by rotating the periodic pattern array of the unit cell of the filter according to the incident direction of the main ray, it becomes constant regardless of the image plane position and the incident direction of the main ray.
  • the spectral characteristics of multi-spectral can be obtained.
  • FIG. 11 is a diagram showing surface plasmon excitation by the diffraction grating of the surface plasmon resonance filter in the embodiment of the present technology.
  • the structural condition of the wave number k SP of the surface plasmon in the presence of the diffraction grating is expressed by the following equation from the X component k 0 Sin ⁇ of the wave number of the incident light and the wave number 2 ⁇ m / S of the diffraction grating.
  • k SP -k 0 Sin ⁇ + 2 ⁇ m / S-expression (1)
  • k 0 is the wave number of the incident light
  • ⁇ is the angle of the incident light.
  • m is the order
  • S is the period of the diffraction grating.
  • k SP ( ⁇ / c) (( ⁇ 1 ⁇ 2 ) / ( ⁇ 1 + ⁇ 2 )) 1/2 equation (2)
  • c is the speed of light
  • ⁇ is the plasma frequency.
  • ⁇ 1 and ⁇ 2 are the permittivity of the metal and the peripheral medium, respectively.
  • FIG. 12 is a diagram showing the resonance conditions of the surface plasmon of the surface plasmon resonance filter according to the embodiment of the present technology.
  • the horizontal axis is the wave number k x
  • the vertical axis is the plasma frequency ⁇ .
  • Vertical or diagonal lines are the structural conditions of equation (1).
  • the curve is the physical characteristic condition of equation (2).
  • ⁇ P is the plasma frequency
  • the angular frequency ⁇ P (ne / ⁇ 0 * m) 1/2 determined by the dielectric constant ⁇ 0 of the vacuum.
  • the condition of the intersection that satisfies the above equations (1) and (2) is required.
  • the wave number component k 0 Sin ⁇ of the left term of the equation (1) decreases in the case of oblique incident, resulting in a long wavelength shift.
  • FIGS. 13 to 15 are diagrams showing examples of spectral characteristics before and after correction of the surface plasmon resonance filter.
  • FIG. 16 is a diagram showing an example of a pattern arrangement of the filter 200 according to the embodiment of the present technology.
  • 16 spectra are arranged in 4 ⁇ 4 pixels by changing the period and hole diameter of the holes of each pixel, and 16 spectra are arranged in a repeating pattern as a unit of one cycle.
  • the repetition pattern may be n ⁇ n pixels of arbitrary n (n is an integer).
  • a repeating pattern of m ⁇ n pixels may be used assuming an arbitrary m (m is an integer) so that the aspect ratios are different.
  • a multi-spectral image By applying signal processing to such a plurality of spectra, a multi-spectral image can be obtained.
  • This multi-spectral signal can be applied to various applications such as agriculture and biological detection, as will be described later.
  • the surface may have a Moth Eye structure.
  • the surface reflection can be reduced, the vibration (ripple) of the spectrum due to the optical interference with the surface reflected wave is eliminated, and the accuracy as the multi-spectral can be further improved.
  • FIG. 17 is a cross-sectional view showing a modified example of the device structure of the solid-state image sensor 100 according to the embodiment of the present technology.
  • the device structure of this modified example includes a moth-eye structure 300 on the surface of the structure of the above-described embodiment.
  • This moth-eye structure 300 suppresses the reflectance on the surface on the upper layer side of the filter 200 to 1% or less. As a result, the moth-eye structure 300 can weaken the interference effect in the upper layer than the filter 200.
  • FIG. 18 is a diagram showing a first example of a method for manufacturing the moth-eye structure 300 according to the embodiment of the present technology.
  • the mold 30 which is a mold is prepared in advance.
  • a silicon substrate may be processed by dry etching to form a mold with a pattern smaller than the wavelength order with a resist by electron beam lithography.
  • an ultraviolet curable resin 320 is applied onto the substrate 310 by spin coating. Further, the resin 320 is hardened by irradiating ultraviolet rays while pressing the mold. Next, when the mold is peeled off, the moth-eye structure is transferred to the resin 320.
  • FIG. 19 is a diagram showing a second example of a method for manufacturing the moth-eye structure 300 according to the embodiment of the present technology.
  • a moth-eye structure 300 is formed on the surface of the resin substrate 301 separately from the structure from the semiconductor substrate 110 to the silicon oxynitride film 180, and the solid-state image sensor 100 is formed by laminating the structure 300. Can be manufactured.
  • FIG. 20 is a diagram showing an example of the spectral characteristics of the solid-state imaging device 100 including the moth-eye structure 300 according to the embodiment of the present technology.
  • This graph shows the results of simulating the spectral sensitivity characteristics when light is incident on the solid-state image sensor 100 having the moth-eye structure 300 from above by the three-dimensional FDTD (Finite-Difference Time-Domain) method. ..
  • FDTD Finite-Difference Time-Domain
  • FIG. 21 is a diagram showing an example of application of the solid-state image sensor 100 in the embodiment of the present technology to growing agricultural products and the like.
  • the figure shows the spectral characteristics of reflectance depending on the vegetative state.
  • An index showing the distribution status and activity of such vegetation is called NDVI (Normalized Difference Vegetation Index).
  • NDVI Normalized Difference Vegetation Index
  • the reflectance differs between healthy plants, weakened plants, and dead plants due to the large change in reflectance depending on the vegetation state in the wavelength range of 600 to 800 nm.
  • this reflectance is primarily from the leaves of the plant.
  • the vegetation state of the plant can be sensed by acquiring multi-spectral characteristics of two or more wavelengths at least with a wavelength of 600 to 800 nm in between or at a wavelength of 600 to 800 nm.
  • a solid-state image sensor that detects a wavelength in the 600 to 700 nm range and a solid-state image sensor that detects a wavelength in the 700 to 800 nm range can be used to detect the vegetation state from the relationship between the two signal values. Further, the vegetation state can be sensed from the relationship between the two signal values by using a solid-state image sensor that detects a wavelength in the range of 400 to 600 nm and a solid-state image sensor that detects a wavelength in the wavelength range of 800 to 1000 nm. Further, in order to improve the detection accuracy, three or more solid-state imaging devices may be used to detect three or more wavelength regions, and the vegetation state may be detected from the relationship between the signal values. ..
  • a solid-state image sensor capable of detecting such a wavelength range can be mounted on a small unmanned aerial vehicle such as a drone, and the growing state of the crop can be observed from the sky to proceed with the growing of the crop.
  • FIG. 22 is a diagram showing an example of application of the solid-state image sensor 100 in the embodiment of the present technology to human skin detection.
  • the figure shows the spectral spectral characteristics of the reflectance of human skin, and it can be seen from the figure that the reflectance changes significantly in the wavelength range of 450 to 650 nm. From these changes, it becomes possible to authenticate whether the subject is human skin. For example, by detecting three spectra having wavelengths of 450 nm, 550 nm, and 650 nm, it is possible to authenticate whether or not the subject is human skin. For example, when the subject is a material other than human skin, the spectral characteristics of the reflectance change, so that it can be distinguished from human skin.
  • a solid-state image sensor capable of detecting such a wavelength range in, for example, a biometric authentication device, it can be applied to prevent counterfeiting of faces, fingerprints, irises, etc., and more accurate biometric authentication can be performed. It will be possible.
  • FIG. 23 is a diagram showing a configuration example of an electronic device which is an application example of the solid-state image sensor 100 in the embodiment of the present technology.
  • the electronic device includes a lens 400, a solid-state image sensor 100, a signal processing circuit 510, a monitor 530, and a memory 520. This electronic device can capture still images and moving images.
  • the lens 400 includes at least one lens, and guides the incident light from the subject to the solid-state imaging element 100 to form an image on the light-receiving surface of the solid-state imaging element 100.
  • Charges are accumulated in the solid-state image sensor 100 for a certain period of time according to the image formed on the light receiving surface via the lens 400. Then, the signal accumulated in the solid-state image sensor 100 and corresponding to the electric charge is supplied to the signal processing circuit 510.
  • the signal processing circuit 510 performs various signal processing on the pixel signal output from the solid-state image sensor 100.
  • the image data obtained by performing signal processing by the signal processing circuit 510 is supplied to the monitor 530 and displayed, or supplied to the memory 530 and stored.
  • the present technology can have the following configurations.
  • Solid-state image sensor Solid-state image sensor.
  • a solid-state image sensor including a semiconductor substrate on which a photodiode is formed and a filter included in a multilayer structure laminated on the light receiving surface side of the semiconductor substrate and whose periodic pattern array is rotated according to the incident direction of the main light beam.
  • the filter performs a plurality of spectroscopy in multiple bands of three or more primary colors of light.
  • Solid-state image sensor 110
  • Semiconductor substrate 120
  • Silicon oxide film 140
  • Light-shielding film 160
  • Silicon oxynitride film 170
  • Silicon nitride film 200
  • Metal 220 Hole 230 Dielectric 300

Abstract

La présente invention concerne un élément d'imagerie à semi-conducteurs dans lequel est obtenu un spectre optique avec une haute précision spectrale.　L'élément d'imagerie à semi-conducteurs comprend un substrat semi-conducteur et un filtre. Une photodiode est formée sur le substrat semi-conducteur. Le filtre est compris dans une structure multicouche stratifiée du côté surface de réception de lumière du substrat semi-conducteur. Dans le filtre, un réseau de motifs périodiques est mis en rotation selon la direction d'incidence d'un rayon principal. Par exemple, un filtre de résonance plasmonique de surface de type propagation ou un filtre de résonance plasmonique de surface localisée est utilisé en tant que filtre.
PCT/JP2020/047960 2020-03-09 2020-12-22 Élément d'imagerie à semi-conducteurs et dispositif électronique WO2021181818A1 (fr)

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JP2020-039487 2020-03-09
JP2020039487A JP2021141264A (ja) 2020-03-09 2020-03-09 固体撮像素子および電子機器

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055202A (ja) * 2011-09-02 2013-03-21 Toshiba Corp 固体撮像素子
JP2014158267A (ja) * 2014-03-17 2014-08-28 Sony Corp カラーフィルタ、撮像素子、画像処理装置および画像処理方法
JP2019145563A (ja) * 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 センサ装置および電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055202A (ja) * 2011-09-02 2013-03-21 Toshiba Corp 固体撮像素子
JP2014158267A (ja) * 2014-03-17 2014-08-28 Sony Corp カラーフィルタ、撮像素子、画像処理装置および画像処理方法
JP2019145563A (ja) * 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 センサ装置および電子機器

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