WO2021177874A1 - High-current semiconductor components and systems - Google Patents

High-current semiconductor components and systems Download PDF

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Publication number
WO2021177874A1
WO2021177874A1 PCT/SE2021/050152 SE2021050152W WO2021177874A1 WO 2021177874 A1 WO2021177874 A1 WO 2021177874A1 SE 2021050152 W SE2021050152 W SE 2021050152W WO 2021177874 A1 WO2021177874 A1 WO 2021177874A1
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WIPO (PCT)
Prior art keywords
conductors
component
conductor
current semiconductor
plates
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PCT/SE2021/050152
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French (fr)
Inventor
Tomas Jonsson
Christer Svensson
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Powonics Ab
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Publication of WO2021177874A1 publication Critical patent/WO2021177874A1/en

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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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Definitions

  • the present invention relates generally to high-current semiconductor components comprising a semiconductor chip in which a plurality of semiconductor elements are integrated.
  • the prior art component of e.g. US2007108617 further has at least one metallization layer with a plurality of conductive lines, arranged on top of the semiconductor elements. Every second conductive line is connected to the first electrode elements of the semiconductor elements, e.g. source, and every other second conductive line is connected to the second electrode elements of the semiconductor elements, e.g. drain.
  • Every second conductive line is connected to the first electrode elements of the semiconductor elements, e.g. source, and every other second conductive line is connected to the second electrode elements of the semiconductor elements, e.g. drain.
  • An object of embodiments of the present invention is to produce high- current semiconductor components that can cope with higher currents than the high-current semiconductor components today. Another object of embodiments of the invention is to achieve high-current semiconductor components that are cost- efficient.
  • a high-current semiconductor component comprises a first part comprising a semiconductor chip in which a plurality of semiconductor elements are integrated, each semiconductor element comprising at least a first and a second electrode element provided on a first side of the chip.
  • the first part further comprises a first layer of conductors arranged on top of the first side of the semiconductor chip, the first layer of conductors comprising a number of first conductors connected to the first electrode elements and a number of second conductors connected to the second electrode elements, the first and second conductors being fewer than the first and the second electrode elements.
  • the first part is normally produced in a silicon process.
  • the silicon process is a standardized process in which silicon substrates are doped and etched and coated with metal layers and possible insulators. By producing the first part in such a standardized silicon process, the first part can be produced in a cost-efficient manner.
  • the second part comprises a plurality of substantially parallel conducting plates, each conducting plate having a distal end and a proximal end, wherein the proximal end faces the first layer of conductors and the distal end faces away from the first layer of conductors.
  • the plurality of conducting plates comprises a number of first conducting plates connected with their proximal ends to the number of first conductors, and a number of second conducting plates connected with their proximal ends to the number of second conductors.
  • the first and second conducting plates are fewer than the first and second conductors.
  • the second part further comprises a first component conductor connected to the distal ends of the number of first conducting plates, and a second component conductor connected to the distal ends of the number of second conducting plates.
  • the first component conductor is added to the distal ends of the conducting plates, the distal end facing away from the first layer of conductors, means that the conducting plates extends more or less perpendicular to the first layer of conductors.
  • a relatively large cross-sectional area can be achieved for the conducting plates compared to what can be achieved with another layer of conductors that is similar to the first and second layer of conductors.
  • a large cross- sectional area for the conducting plates means that they can cope with higher currents and that they have a low electric and thermic resistance.
  • the high-current semiconductor component comprises stud bonds, copper pillars or solder bumps arranged on the number of first and second conductors of the first part.
  • the plurality of conducting plates of the second part are connected with their proximal ends to the number of first or second conductors via the stud bonds, copper pillars or solder bumps. Stud bonds, solder bumps or copper pillars are arranged onto the first and second conductors, at the end of or outside of the silicon process.
  • the conducting plates are arranged onto the stud bonds, copper pillars or solder bumps.
  • the high-current semiconductor component By parting the high-current semiconductor component in a first part arranged on one side of stud bonds, copper pillars or solder bumps, and a second part on the other side of the stud bonds, copper pillars or solder bumps, it is possible to achieve a high-current semiconductor component that copes larger currents in its highest layer than if the component is only arranged under stud bonds, copper pillar or solder bumps, as when produced in a standardized silicon process.
  • the number of first and second conductor plates are massive metal plates. Such massive metal plates are effective in removing heat from the semiconductor chip.
  • the first and second conducting plates have an extension parallel to the semiconductor chip that is larger than the extension of the semiconductor chip in the same direction. Hereby, the resistance through the first and second conductor plates is lowered.
  • the first and second conductor plates each has an x-extension parallel with the first layer of conductors wherein in the x- extension at a first part of the x-extension where the first component conductor is arranged, the first conductor plates extend further away from the first layer of conductors than the second conductor plates. Further, at a second part of the x- extension where the second component conductor is arranged, the second conductor plates extend further away from the first layer of conductors than the first conductor plates.
  • the first component conductor can be arranged flat on top of the first and second conductor plates at their first parts.
  • first component conductor can be arranged flat on top of the first and second conductor plates at their second parts.
  • first and second component conductors can be arranged as flat metal plates, which has some advantages.
  • a high-current semiconductor component system comprising a plurality of high-current semiconductor components according to the previous aspect, wherein the plurality of high-current semiconductor components share electrodes by having common first or second component conductors and/or common first or second conducting plates.
  • Fig. 1 is a cross-section side view of an example of a semiconductor chip that can be used in the present invention.
  • Fig. 2 is a view from above of the chip of fig. 1.
  • FIG. 3 is a perspective view of a first part of a semiconductor component according to embodiments of the invention.
  • Fig. 4a is a cross-sectional side view of a semiconductor component according to an embodiment.
  • Fig. 4b is another cross-sectional side view, parallel to the cross- sectional side view of fig. 4a, of the semiconductor component of fig. 4a.
  • Fig. 5 is a cross-sectional view of the semiconductor component of fig. 4a and 4b but taken perpendicular to the side views of figs. 4a and 4b.
  • Fig. 6 is a schematic top view and a circuit diagram of a high-current semiconductor component system according to an embodiment.
  • Fig. 7 is a schematic top view of a high-current semiconductor component system according to another embodiment.
  • Fig. 1 shows a cross-section of part of a semiconductor chip 1 in which are integrated a plurality of semiconductor elements 2.
  • the semiconductor elements 2 are transistors, more specifically metal oxide semiconductor field effect transistors (MOSFET), however other type of semiconductor elements may apply.
  • the plurality of transistors 2 are to be connected in parallel to produce a semiconductor component used for controlling high currents.
  • Each transistor 2 has three electrodes: a source electrode 3, a drain electrode 4 and a gate electrode 5. As can be seen in fig. 1 , all electrodes are arranged on the same side of the semiconductor chip 1. Flereby the forward resistance through the transistor 2 is lowered compared to if source and drain are on opposite sides of the chip 1.
  • the source electrode 3 is in contact with a doped source area 6, the drain electrode 4 is in contact with a doped drain area 7 and the gate electrode 5 is arranged in an oxidized area 8.
  • adjoining transistors 2 share the same source electrode 3 or drain electrode 4, thereby saving space.
  • the base, source and drain electrodes 3, 4, 5, as well as the doped drain and source areas 6, 7 and the oxidized area 8, have an elongate shape. Further, there are transistors 2 arranged densely packed both in x- and y-direction on the chip.
  • the distance between the source electrode 3 and the drain electrode 4, between the source electrode 3 and the outer edge of the source area 6 and between the drain electrode 4 and the outer edge of the drain area 7 should be as small as possible. Consequently, the chip structure including the element electrodes 3, 4, 5 need to have a very high resolution.
  • the semiconductor chip with the base, source and drain areas 6, 7, 8 is produced in a silicon process.
  • the silicon process is a standardized process performed in e.g. specially adapted factories, so called silicon foundries.
  • silicon substrates aka wafers are treated by doping and oxidizing the silicon to achieve positive and negative base, source and drain areas (p and n areas) 6, 7, 8.
  • the so- produced semiconductor wafer is coated with a metal layer which is patterned, for example by lithography, in order to produce the element electrodes 3, 4, 5. Due to the very high resolution, the element electrodes 3, 4, 5 will be very thin, thus giving a high resistance per unit length.
  • Fig. 3 shows an embodiment for solving this problem.
  • the semiconductor chip 1 with its densely packed transistors as in fig. 1 and 2
  • a first layer of parallel conductors 10, 11 in such a way that source conductors of the first layer, aka third conductors 10, are connected with the source electrodes 3, and drain conductors of the first layer, aka fourth conductors 11 , are connected with the drain electrodes 4.
  • the third and fourth conductors 10, 11 are arranged perpendicular to the elongate shape of the source and drain electrodes 3, 4 but in a more or less parallel plane. This is illustrated in fig.
  • the third and fourth conductors 10, 11 extend in x-direction whereas the source and drain electrodes 3, 4, aka first and second electrode elements extend in y-direction.
  • an insulating layer 9 of e.g. an oxide.
  • connections (not shown) that electrically connect the source electrodes 3 with the third conductors 10 at points of intersection in the x-y plane (see fig. 3) between the source electrodes 3 and the third conductors 10.
  • the third and fourth conductors 10, 11 each has a greater cross-sectional dimension than the source and drain electrodes 3, 4.
  • the third and fourth conductors 10, 11 have a lower resistance than the source and drain electrodes 3, 4 and can hereby handle higher currents. Further the third and fourth conductors 10, 11 preferably are fewer than the source and drain electrodes 3, 4 whereby less dense contacting is enabled, and whereby currents from many source and drain electrodes, respectively, are joined into one third and fourth conductor 10, 11 , respectively.
  • the first and second electrode elements 3, 4, may be of any type of conducting metal or metal alloy.
  • the third and fourth conductors 10, 11 may be of any type of conducting metal or metal alloy.
  • first and second conductors 13, 14 there is a second layer of parallel source and drain conductors, aka first and second conductors 13, 14.
  • the first conductors 13 are connected with the third conductors 10, and the second conductors 14 are connected with the fourth conductors 11. Further, the first and second conductors 13, 14 are arranged perpendicular to the third and fourth conductors 10, 11 and in a parallel plane, as illustrated in fig. 3 by the first and second conductors 13, 14 extending in y-direction.
  • a second insulating layer e.g. a polymer.
  • first connections 15 that connect the first conductors 13 with the third conductors 10 at points of intersection in the x-y plane (see fig. 3).
  • second connections 16 through the second insulating layer that connect the second conductors 14 with the fourth conductors 11.
  • the second insulating layer may be an oxide.
  • the first and second conductors 13, 14 each has a greater cross-sectional dimension than the third and fourth conductors 10, 11 .
  • the first and second conductors 13, 14 have a lower resistance than the third and fourth conductors 10, 11 and can hereby handle higher currents.
  • first and second conductors 13, 14 preferably are fewer than the third and fourth conductors 10, 11 whereby less dense contacting is enabled, and whereby currents from many third and fourth conductor 10, 11 , respectively, are joined into one first and second conductor 13, 14, respectively.
  • the first and second conductors 13, 14 are normally more than one; only a part of a semiconductor chip is shown in fig. 3.
  • the first and second conductors 13, 14, may be of any type of conducting metal or metal alloy.
  • the first layer i.e. the third and fourth conductors 10, 11
  • the first and second conductors 13, 14 are connected directly to the source and drain electrodes 3, 4.
  • the first and second conductors 13, 14 are arranged perpendicular to the source and drain electrodes 3, 4 but still in a parallel plane, i.e. in the x-direction of fig. 3.
  • the second layer of conductors, the first layer of conductors, when used, as well as its insulating layers and connections between layers are produced in the silicon process. Also, in case there are more than two such layers of conductors, they are produced in the same way.
  • the semiconductor chip with its densely packed transistors 2 is coated with the insulating layer 9, the connections (not shown) are inserted through the insulating layer 9, and the insulating layer 9 is coated with metal.
  • a pattern resembling the third and fourth conductors 10, 11 is etched into a mask, and the etched pattern is transferred from the mask to the coated metal using lithography, e.g. photolithography or X-ray-lithography.
  • the first layer of conductors comprising the first and second conductor 13, 14 is produced in the same way, on top of the second layer of conductors. [0031]
  • the design of the connection between the gate electrode 5 of the individual transistors 2 and the common component gate electrode formed by the paralleled transistors is less critical since the gate conducts a much lower current.
  • the gate electrodes 5 of the transistors 2 can be connected to the component gate electrode at the periphery of the semiconductor chip.
  • a first part 20 of a high-current semiconductor component is produced in the above mentioned silicon process.
  • Such a process is cost-efficient.
  • Fig. 4a and 4b show a high-current semiconductor component according to embodiments, the component comprising the first part 20 produced in a silicon process and the second part 60 produced in another process separate from the silicon process.
  • the second part 60 may be pre-mounted before the first and second parts 20, 60 are interconnected. Alternatively, the second part 60 is mounted onto the first part 20 one layer each.
  • Onto the third and fourth conductors 13, 14 are arranged a plurality of substantially parallel conducting plates 61 , 62, each conducting plate having a distal end 61b, 62b and a proximal end 61a, 62a.
  • the parallel conducting plates 61 , 62 extend in the x-z-plane in fig. 4a and 4b.
  • the proximal end faces the first layer of conductors 13, 14 and the distal end faces away from the first layer of conductors.
  • the first layer of conductors 13, 14 extend in the x-y-plane.
  • the plurality of conducting plates 61 , 62 comprises a number of first conducting plates 61 connected with their proximal ends 61a to the number of first conductors 13 and a number of second conducting plates 62 connected with their proximal ends 62a to the number of second conductors 14.
  • Fig. 4a shows a cross-section in the x-z plane made through one of the first conducting plates 61.
  • Fig. 4b shows a cross-section in the x-z plane made through one of the second conducting plates 62.
  • the first and second conducting plates 61 , 62 are fewer than the first and second conductors 13, 14.
  • the plurality of conducting plates 61 , 62 are connected with their proximal ends 61a, 62a to the first and second conductors 13, 14, respectively, via electrical connections 65.
  • the electrical connections may be for example stud bonds, copper pillars or solder bumps.
  • first component conductor 71 Onto the distal ends 61 b of the first conducting plates 61 is mounted a first component conductor 71.
  • the first component conductor 71 in fig. 4a is marked with “S”, as are the first conductors 13. This is to illustrate that they are connected to the source electrodes 3 of the transistors 2.
  • the first component conductor 71 is the source component conductor in the embodiment when the high-current semiconductor component is a transistor.
  • second component conductor 72 onto the distal ends 62b of the second conducting plates 62 is mounted a second component conductor 72.
  • the second component conductor 72 in fig.
  • the second component conductor 72 is the drain component conductor in the embodiment when the high-current semiconductor component is a transistor.
  • the electrical connections 65 may be arranged onto the first and second conductors 13, 14 after the silicon process, as so called pads, e.g. metal “islands”.
  • the second part 60 including the first and second conducting plates 61 , 62 and the first and second component conductors 71 , 72, may be pre-mounted. Thereafter the second part 60 is mounted with the proximal ends 61a, 61b to the electrical connections 65 in a standard flip-chip method.
  • the first and second component conductors 71 , 72 may be a part of a printed circuit board on which the high-current semiconductor component is mounted.
  • first conducting plates 61 and the first component conductor 71 , and between the second conducting plates 62 and the second component conductor 72, respectively, may be achieved through soldering.
  • the number of first conducting plates 61 is fewer than the number of first conductors 13 and the number of second conducting plates 62 is fewer than the number of second conductors 14.
  • the 71 is at least one.
  • the second component conductor 72 is at least one.
  • the first component conductor 71 is fewer than the number of first conducting plates 61
  • the second component conductor 72 is fewer than number of second conducting plates 62.
  • the first conducting plates 61 extend further away from the first layer of conductors 13, 14 at a first part 61 c in x-direction where the first component conductor 71 is arranged compared to at a second part 61 d where the second component conductor 72 is arranged.
  • insulation 64 is arranged between the plurality of substantially parallel conducting plates 61 , 62, and optionally also outside the outermost conducting plates.
  • Fig. 5 shows a cross-section xi-xi in the x-z-plane at the first part 61 c (also marked in fig. 4), where the first conducting plates 61 extends towards and against connectors 73 of the first component conductor 71 in order to provide the electrical connection between the first conducting plates 61 and the first component conductor 71 but the second conducting plates 62 do not reach the first component conductor 71. Further, the second conducting plates 62 extend further away from the first layer of conductors 13, 14 at a second part 62d in the y- direction where the second component conductor 72 is arranged compared to at a first part 62c where the first component conductor 71 is arranged.
  • Fig. 6 describes an embodiment of a high-current semiconductor component system 200 that comprises a plurality of high-current semiconductor components 100 as defined above.
  • the upper part of fig. 6 shows a schematic circuit diagram whereas the lower part shows a possible implementation on silicon.
  • Both the upper and lower part of fig. 6 shows four transistors 100 aka T1 , T2, T3, T4 connected in a bridge connection.
  • the four transistors in the lower part of fig.6 occupies a similarly large rectangular area, each transistor having a fourth of the total area.
  • the darker parts with slanting lines represent component conductors.
  • the figure also shows batteries connected to the high-current semiconductor component system 200.
  • this high-current semiconductor component system, as well as the separate high-current semiconductor components can be used for controlling high-current batteries, such as to be used in electrical vehicles.
  • the four high-current semiconductor components 100 are connected in a bridge configuration so that a first T 1 and a third T3 high-current semiconductor component have a common second component conductor 72 (drain), a second T2 and a fourth T4 high-current semiconductor component have a common first component conductor 71 (source). Further, the first T 1 and the second T2 high-current semiconductor component have common conducting plates 61 of T1 and 62 of T2, also connected to the first component conductor 71 of the first high-current semiconductor component T1. In other words, the first number of conducting plates 61 of T1 are the same conducting plates as the second number of conducting plates 62 of T2.
  • the third T3 and the fourth T4 high-current semiconductor component have common conducting plates 61 of T3 and 62 of T4, also connected to the second component conductor 72 of the fourth high-current semiconductor component T4.
  • the first number of conducting plates 61 of T3 are the same conducting plates as the second number of conducting plates 62 of T4. In such a way all connections of the bridge are of very low resistance, either via conducting plates or via component conductors.
  • Fig. 7 shows an embodiment where control electronics 150 for controlling the high-current semiconductor components 100 is arranged on the same chip, which will reduce the cost of the final control system.

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Abstract

Disclosed is a high-current semiconductor component comprising: a first part (20), comprising a semiconductor chip in which a plurality of semiconductor elements are integrated, each semiconductor element comprising a first and a second electrode element. The first part (20) further comprises a first conductors (13) connected to the first electrode elements and second conductors (14) connected to the second electrode elements, the first part (20) being produced in a silicon process. The component further comprises a second part (60) comprising a plurality of substantially parallel conducting plates (61, 62), each conducting plate having a distal end (61b, 62b) and a proximal end (61a, 62a), the conducting plates (61, 62) comprising first conducting plates (61) connected with their proximal ends to the first conductors (13) and second conducting plates (62) connected with their proximal ends to the second conductors (14). The second part further comprises a first component conductor (71) connected to the distal ends of the first conducting plates (61), and a second component conductor (72) connected to the distal ends of the second conducting plates (62).

Description

HIGH-CURRENT SEMICONDUCTOR COMPONENTS AND SYSTEMS
Technical field
[0001] The present invention relates generally to high-current semiconductor components comprising a semiconductor chip in which a plurality of semiconductor elements are integrated.
Background art
[0002] In order for semiconductor components, such as transistors, to handle high currents, a large number of semiconductor elements have to be connected in parallel on a semiconductor substrate, e.g. silicon chip, in order to form a high- current semiconductor component. The greater the number of semiconductor elements that can be arranged on a given surface of a silicon substrate, the higher the currents that can be directed through this surface. Since semiconductor element density today can be extremely high, it will be understood that contacting has to involve conductors of minute dimensions. However, minute conductors will have a considerable resistance, which therefore leads to a high forward resistance of the semiconductor component formed by the paralleled semiconductor elements. In order to lower the forward resistance for increased currents, semiconductor elements are connected in parallel using metal strips that are connected to a multiplicity of the paralleled semiconductor elements.
[0003] Semiconductor components for high currents normally have their high current conductors on each side, i.e. different sides of the silicon chip. For such components, the backside electrode is common to all semiconductor components on the chip. This prevents integrating several separated semiconductor components in one chip. Further, when having the conductors on different sides of the chip, the current has to pass the bottom part of the silicon wafer, which also adds resistance to the current path. In order to further reduce the forward resistance, there are high-current semiconductor components in which all component conductors are on the same side of the chip. Such components are described in US patent application 2007108617, in International patent application WO94/09511 as well as in US patent application 2016329890. All those prior art disclosures have parallel semiconductor elements arranged on one side of a silicon substrate.
[0004] The prior art component of e.g. US2007108617 further has at least one metallization layer with a plurality of conductive lines, arranged on top of the semiconductor elements. Every second conductive line is connected to the first electrode elements of the semiconductor elements, e.g. source, and every other second conductive line is connected to the second electrode elements of the semiconductor elements, e.g. drain. Hereby, comparatively low currents are provided through the connectors of the semiconductor elements and when the low currents from the semiconductor elements are added in order to achieve the higher currents of the semiconductor components, the current travel through conductive lines of a larger dimension, hereby keeping the forward resistance low.
[0005] For high current semiconductor components there is always a need to lower the forward resistance and to be able to increase the currents flowing through the components.
Summary of invention
[0006] An object of embodiments of the present invention is to produce high- current semiconductor components that can cope with higher currents than the high-current semiconductor components today. Another object of embodiments of the invention is to achieve high-current semiconductor components that are cost- efficient.
[0007] It is possible to achieve any of these objects or others by using high- current semiconductor components as defined in the attached claims.
[0008] According to one aspect, a high-current semiconductor component is provided that comprises a first part comprising a semiconductor chip in which a plurality of semiconductor elements are integrated, each semiconductor element comprising at least a first and a second electrode element provided on a first side of the chip. The first part further comprises a first layer of conductors arranged on top of the first side of the semiconductor chip, the first layer of conductors comprising a number of first conductors connected to the first electrode elements and a number of second conductors connected to the second electrode elements, the first and second conductors being fewer than the first and the second electrode elements. As the first and second conductors are fewer than the first and second electrode elements but being connected to those elements, the currents flowing through the first and second conductors will be higher than the current flowing through the first and second electrode elements. When the first and second conductors have a larger cross-sectional area than the first and second electrode elements, the resistance through the first and second conductors will be comparatively low. The first part is normally produced in a silicon process. The silicon process is a standardized process in which silicon substrates are doped and etched and coated with metal layers and possible insulators. By producing the first part in such a standardized silicon process, the first part can be produced in a cost-efficient manner.
[0009] However, the cross-sectional areas that can be achieved for the conductors of the metal layers using the standardized silicon process are not large enough to achieve the low resistance that is requested for today's high-current semiconductor components. Therefore, onto the conductors of the metal layers, a second part is added in a second process after the silicon process. The second part comprises a plurality of substantially parallel conducting plates, each conducting plate having a distal end and a proximal end, wherein the proximal end faces the first layer of conductors and the distal end faces away from the first layer of conductors. The plurality of conducting plates comprises a number of first conducting plates connected with their proximal ends to the number of first conductors, and a number of second conducting plates connected with their proximal ends to the number of second conductors. The first and second conducting plates are fewer than the first and second conductors. The second part further comprises a first component conductor connected to the distal ends of the number of first conducting plates, and a second component conductor connected to the distal ends of the number of second conducting plates. By adding such substantially parallel conducting plates onto the first layer of conductors as described above, in a process separate from the silicon process, a larger cross- sectional area can be achieved for the conducting plates as can be achieved in the silicon process, and therefore larger currents can be sent through the conducting plates. Further, that the first component conductor is added to the distal ends of the conducting plates, the distal end facing away from the first layer of conductors, means that the conducting plates extends more or less perpendicular to the first layer of conductors. By having such a structure the following advantage is achieved: A relatively large cross-sectional area can be achieved for the conducting plates compared to what can be achieved with another layer of conductors that is similar to the first and second layer of conductors. A large cross- sectional area for the conducting plates means that they can cope with higher currents and that they have a low electric and thermic resistance.
[0010] Further, the high-current semiconductor component comprises stud bonds, copper pillars or solder bumps arranged on the number of first and second conductors of the first part. Further, the plurality of conducting plates of the second part are connected with their proximal ends to the number of first or second conductors via the stud bonds, copper pillars or solder bumps. Stud bonds, solder bumps or copper pillars are arranged onto the first and second conductors, at the end of or outside of the silicon process. The conducting plates are arranged onto the stud bonds, copper pillars or solder bumps. By parting the high-current semiconductor component in a first part arranged on one side of stud bonds, copper pillars or solder bumps, and a second part on the other side of the stud bonds, copper pillars or solder bumps, it is possible to achieve a high-current semiconductor component that copes larger currents in its highest layer than if the component is only arranged under stud bonds, copper pillar or solder bumps, as when produced in a standardized silicon process.
[0011] According to an embodiment, the number of first and second conductor plates are massive metal plates. Such massive metal plates are effective in removing heat from the semiconductor chip. According to another embodiment, the first and second conducting plates have an extension parallel to the semiconductor chip that is larger than the extension of the semiconductor chip in the same direction. Hereby, the resistance through the first and second conductor plates is lowered.
[0012] According to another embodiment, the first and second conductor plates each has an x-extension parallel with the first layer of conductors wherein in the x- extension at a first part of the x-extension where the first component conductor is arranged, the first conductor plates extend further away from the first layer of conductors than the second conductor plates. Further, at a second part of the x- extension where the second component conductor is arranged, the second conductor plates extend further away from the first layer of conductors than the first conductor plates. Hereby the first component conductor can be arranged flat on top of the first and second conductor plates at their first parts. Thus a solid and good connection can be achieved between the first component conductor and the first conductor plates at the first part via some kind of standard method such as soldering. Similarly, the second component conductor can be arranged flat on top of the first and second conductor plates at their second parts. Also, the first and second component conductors can be arranged as flat metal plates, which has some advantages.
[0013] According to another aspect, a high-current semiconductor component system comprising a plurality of high-current semiconductor components according to the previous aspect, wherein the plurality of high-current semiconductor components share electrodes by having common first or second component conductors and/or common first or second conducting plates.
[0014] Further possible features and benefits of this solution will become apparent from the detailed description below.
Brief description of drawings
[0015] The invention is now described, by way of example, with reference to the accompanying drawings, in which:
[0016] Fig. 1 is a cross-section side view of an example of a semiconductor chip that can be used in the present invention. [0017] Fig. 2 is a view from above of the chip of fig. 1.
[0018] Fig. 3 is a perspective view of a first part of a semiconductor component according to embodiments of the invention.
[0019] Fig. 4a is a cross-sectional side view of a semiconductor component according to an embodiment.
[0020] Fig. 4b is another cross-sectional side view, parallel to the cross- sectional side view of fig. 4a, of the semiconductor component of fig. 4a.
[0021 ] Fig. 5 is a cross-sectional view of the semiconductor component of fig. 4a and 4b but taken perpendicular to the side views of figs. 4a and 4b.
[0022] Fig. 6 is a schematic top view and a circuit diagram of a high-current semiconductor component system according to an embodiment.
[0023] Fig. 7 is a schematic top view of a high-current semiconductor component system according to another embodiment.
Description of embodiments
[0024] Fig. 1 shows a cross-section of part of a semiconductor chip 1 in which are integrated a plurality of semiconductor elements 2. In this example, the semiconductor elements 2 are transistors, more specifically metal oxide semiconductor field effect transistors (MOSFET), however other type of semiconductor elements may apply. The plurality of transistors 2 are to be connected in parallel to produce a semiconductor component used for controlling high currents. Each transistor 2 has three electrodes: a source electrode 3, a drain electrode 4 and a gate electrode 5. As can be seen in fig. 1 , all electrodes are arranged on the same side of the semiconductor chip 1. Flereby the forward resistance through the transistor 2 is lowered compared to if source and drain are on opposite sides of the chip 1. The source electrode 3 is in contact with a doped source area 6, the drain electrode 4 is in contact with a doped drain area 7 and the gate electrode 5 is arranged in an oxidized area 8. As can be seen in fig. 1 , adjoining transistors 2 share the same source electrode 3 or drain electrode 4, thereby saving space. As can be seen in fig. 2, the base, source and drain electrodes 3, 4, 5, as well as the doped drain and source areas 6, 7 and the oxidized area 8, have an elongate shape. Further, there are transistors 2 arranged densely packed both in x- and y-direction on the chip.
[0025] In order to minimize the forward resistance of each transistor 2, and in order to get a high current density on the chip 1 , the distance between the source electrode 3 and the drain electrode 4, between the source electrode 3 and the outer edge of the source area 6 and between the drain electrode 4 and the outer edge of the drain area 7 should be as small as possible. Consequently, the chip structure including the element electrodes 3, 4, 5 need to have a very high resolution.
[0026] In order to achieve such high resolution, the semiconductor chip with the base, source and drain areas 6, 7, 8 is produced in a silicon process. The silicon process is a standardized process performed in e.g. specially adapted factories, so called silicon foundries. Here silicon substrates aka wafers are treated by doping and oxidizing the silicon to achieve positive and negative base, source and drain areas (p and n areas) 6, 7, 8. Further, within the silicon process, the so- produced semiconductor wafer is coated with a metal layer which is patterned, for example by lithography, in order to produce the element electrodes 3, 4, 5. Due to the very high resolution, the element electrodes 3, 4, 5 will be very thin, thus giving a high resistance per unit length.
[0027] Fig. 3 shows an embodiment for solving this problem. Onto the semiconductor chip 1 with its densely packed transistors, as in fig. 1 and 2, there is provided a first layer of parallel conductors 10, 11 in such a way that source conductors of the first layer, aka third conductors 10, are connected with the source electrodes 3, and drain conductors of the first layer, aka fourth conductors 11 , are connected with the drain electrodes 4. Further, the third and fourth conductors 10, 11 are arranged perpendicular to the elongate shape of the source and drain electrodes 3, 4 but in a more or less parallel plane. This is illustrated in fig. 3 by the third and fourth conductors 10, 11 extending in x-direction whereas the source and drain electrodes 3, 4, aka first and second electrode elements extend in y-direction. In between the third and fourth conductors 10, 11 and the source and drain electrodes there is an insulating layer 9 of e.g. an oxide. Through the insulating layer 9 there are connections (not shown) that electrically connect the source electrodes 3 with the third conductors 10 at points of intersection in the x-y plane (see fig. 3) between the source electrodes 3 and the third conductors 10. Further, there are connections (not shown) through the insulating layer 9 that electrically connect the drain electrodes 4 with the fourth conductors 11. The third and fourth conductors 10, 11 each has a greater cross-sectional dimension than the source and drain electrodes 3, 4. Hereby, the third and fourth conductors 10,
11 have a lower resistance than the source and drain electrodes 3, 4 and can hereby handle higher currents. Further the third and fourth conductors 10, 11 preferably are fewer than the source and drain electrodes 3, 4 whereby less dense contacting is enabled, and whereby currents from many source and drain electrodes, respectively, are joined into one third and fourth conductor 10, 11 , respectively. The first and second electrode elements 3, 4, may be of any type of conducting metal or metal alloy. The third and fourth conductors 10, 11 , may be of any type of conducting metal or metal alloy.
[0028] Outside the first layer of conductors 10, 11 , there is a second layer of parallel source and drain conductors, aka first and second conductors 13, 14. The first conductors 13 are connected with the third conductors 10, and the second conductors 14 are connected with the fourth conductors 11. Further, the first and second conductors 13, 14 are arranged perpendicular to the third and fourth conductors 10, 11 and in a parallel plane, as illustrated in fig. 3 by the first and second conductors 13, 14 extending in y-direction. In between the second layer and the first layer, i.e. between the third and fourth conductors 10, 11 and the first and second conductors 13, 14 there is a second insulating layer of e.g. a polymer. Through this second insulating layer there are first connections 15 that connect the first conductors 13 with the third conductors 10 at points of intersection in the x-y plane (see fig. 3). Further, there are second connections 16 through the second insulating layer that connect the second conductors 14 with the fourth conductors 11. The second insulating layer may be an oxide. The first and second conductors 13, 14 each has a greater cross-sectional dimension than the third and fourth conductors 10, 11 . Hereby, the first and second conductors 13, 14 have a lower resistance than the third and fourth conductors 10, 11 and can hereby handle higher currents. Further the first and second conductors 13, 14 preferably are fewer than the third and fourth conductors 10, 11 whereby less dense contacting is enabled, and whereby currents from many third and fourth conductor 10, 11 , respectively, are joined into one first and second conductor 13, 14, respectively. The first and second conductors 13, 14 are normally more than one; only a part of a semiconductor chip is shown in fig. 3. The first and second conductors 13, 14, may be of any type of conducting metal or metal alloy.
[0029] According to another embodiment, the first layer, i.e. the third and fourth conductors 10, 11 , are omitted and the first and second conductors 13, 14 are connected directly to the source and drain electrodes 3, 4. In that case, the first and second conductors 13, 14 are arranged perpendicular to the source and drain electrodes 3, 4 but still in a parallel plane, i.e. in the x-direction of fig. 3. According to yet other embodiments, there is one or more additional layer of conductors arranged on top of the second layer of conductors, the conductors of each additional layer being arranged perpendicular to the conductors of its closest layer, but in a parallel plane.
[0030] The second layer of conductors, the first layer of conductors, when used, as well as its insulating layers and connections between layers are produced in the silicon process. Also, in case there are more than two such layers of conductors, they are produced in the same way. For example, for the second layer of conductors, the semiconductor chip with its densely packed transistors 2 is coated with the insulating layer 9, the connections (not shown) are inserted through the insulating layer 9, and the insulating layer 9 is coated with metal. Further, a pattern resembling the third and fourth conductors 10, 11 is etched into a mask, and the etched pattern is transferred from the mask to the coated metal using lithography, e.g. photolithography or X-ray-lithography. The first layer of conductors comprising the first and second conductor 13, 14 is produced in the same way, on top of the second layer of conductors. [0031] The design of the connection between the gate electrode 5 of the individual transistors 2 and the common component gate electrode formed by the paralleled transistors is less critical since the gate conducts a much lower current. The gate electrodes 5 of the transistors 2 can be connected to the component gate electrode at the periphery of the semiconductor chip.
[0032] As mentioned above, the parts above, aka a first part 20 of a high-current semiconductor component is produced in the above mentioned silicon process. Such a process is cost-efficient. However, within the silicon process it is not possible to produce metal layers thicker than approximately 10 pm within a reasonable time period, i.e. cost-efficiently, and the high-current component needs to cope with higher currents than what can be achieved from the silicon process. Therefore, and according to the invention, a second part 60, comprising a mechanical structure, is arranged onto the first part 20.
[0033] Fig. 4a and 4b show a high-current semiconductor component according to embodiments, the component comprising the first part 20 produced in a silicon process and the second part 60 produced in another process separate from the silicon process. The second part 60 may be pre-mounted before the first and second parts 20, 60 are interconnected. Alternatively, the second part 60 is mounted onto the first part 20 one layer each. Onto the third and fourth conductors 13, 14 are arranged a plurality of substantially parallel conducting plates 61 , 62, each conducting plate having a distal end 61b, 62b and a proximal end 61a, 62a. The parallel conducting plates 61 , 62 extend in the x-z-plane in fig. 4a and 4b. The proximal end faces the first layer of conductors 13, 14 and the distal end faces away from the first layer of conductors. The first layer of conductors 13, 14 extend in the x-y-plane. The plurality of conducting plates 61 , 62 comprises a number of first conducting plates 61 connected with their proximal ends 61a to the number of first conductors 13 and a number of second conducting plates 62 connected with their proximal ends 62a to the number of second conductors 14.
[0034] Fig. 4a shows a cross-section in the x-z plane made through one of the first conducting plates 61. Fig. 4b shows a cross-section in the x-z plane made through one of the second conducting plates 62. Further, the first and second conducting plates 61 , 62 are fewer than the first and second conductors 13, 14. The plurality of conducting plates 61 , 62 are connected with their proximal ends 61a, 62a to the first and second conductors 13, 14, respectively, via electrical connections 65. The electrical connections may be for example stud bonds, copper pillars or solder bumps.
[0035] Onto the distal ends 61 b of the first conducting plates 61 is mounted a first component conductor 71. Hereby a large contact surface is achieved between the first component conductor 71 and the first conducting plates 61 and it is easy to mount the second part 60 onto the first part 20. The first component conductor 71 in fig. 4a is marked with “S”, as are the first conductors 13. This is to illustrate that they are connected to the source electrodes 3 of the transistors 2. In other words, the first component conductor 71 is the source component conductor in the embodiment when the high-current semiconductor component is a transistor. Further, onto the distal ends 62b of the second conducting plates 62 is mounted a second component conductor 72. The second component conductor 72 in fig. 4b is marked with “D”, as are the second conductors 14. This is to illustrate that they are connected to the drain electrodes 4 of the transistors 2. In other words, the second component conductor 72 is the drain component conductor in the embodiment when the high-current semiconductor component is a transistor.
[0036] The electrical connections 65 may be arranged onto the first and second conductors 13, 14 after the silicon process, as so called pads, e.g. metal “islands”. The second part 60, including the first and second conducting plates 61 , 62 and the first and second component conductors 71 , 72, may be pre-mounted. Thereafter the second part 60 is mounted with the proximal ends 61a, 61b to the electrical connections 65 in a standard flip-chip method. The first and second component conductors 71 , 72 may be a part of a printed circuit board on which the high-current semiconductor component is mounted. The electrical connection between the first conducting plates 61 and the first component conductor 71 , and between the second conducting plates 62 and the second component conductor 72, respectively, may be achieved through soldering. [0037] Preferably, the number of first conducting plates 61 is fewer than the number of first conductors 13 and the number of second conducting plates 62 is fewer than the number of second conductors 14. The first component conductor
71 is at least one. The second component conductor 72 is at least one. Preferably, the first component conductor 71 is fewer than the number of first conducting plates 61 , and the second component conductor 72 is fewer than number of second conducting plates 62.
[0038] The first component conductor 71 and the second component conductor
72 may be arranged as metal plates that are arranged substantially perpendicular to the first and second conducting plates 61 , 62. According to an embodiment, and as seen in fig. 4 and fig. 5, the first conducting plates 61 extend further away from the first layer of conductors 13, 14 at a first part 61 c in x-direction where the first component conductor 71 is arranged compared to at a second part 61 d where the second component conductor 72 is arranged. According to an embodiment, and as shown in fig. 5, insulation 64 is arranged between the plurality of substantially parallel conducting plates 61 , 62, and optionally also outside the outermost conducting plates.
[0039] Fig. 5 shows a cross-section xi-xi in the x-z-plane at the first part 61 c (also marked in fig. 4), where the first conducting plates 61 extends towards and against connectors 73 of the first component conductor 71 in order to provide the electrical connection between the first conducting plates 61 and the first component conductor 71 but the second conducting plates 62 do not reach the first component conductor 71. Further, the second conducting plates 62 extend further away from the first layer of conductors 13, 14 at a second part 62d in the y- direction where the second component conductor 72 is arranged compared to at a first part 62c where the first component conductor 71 is arranged. This is not shown in a separate figure, but such a cross-section is taken in X2-X2 of figs. 4a-4b. In this cross-section, the second conducting plates 62 extends towards and against connectors 73 of the second component conductor 72 in order to provide the electrical connection between the second conducting plates 62 and the second component conductor 72 but the second conducting plates 62 do not reach the first component conductor 71.
[0040] Fig. 6 describes an embodiment of a high-current semiconductor component system 200 that comprises a plurality of high-current semiconductor components 100 as defined above. The upper part of fig. 6 shows a schematic circuit diagram whereas the lower part shows a possible implementation on silicon. Both the upper and lower part of fig. 6 shows four transistors 100 aka T1 , T2, T3, T4 connected in a bridge connection. The four transistors in the lower part of fig.6 occupies a similarly large rectangular area, each transistor having a fourth of the total area. The darker parts with slanting lines represent component conductors. The figure also shows batteries connected to the high-current semiconductor component system 200. As a possible implementation, this high-current semiconductor component system, as well as the separate high-current semiconductor components can be used for controlling high-current batteries, such as to be used in electrical vehicles.
[0041] In the embodiment shown in fig. 6, the four high-current semiconductor components 100 are connected in a bridge configuration so that a first T 1 and a third T3 high-current semiconductor component have a common second component conductor 72 (drain), a second T2 and a fourth T4 high-current semiconductor component have a common first component conductor 71 (source). Further, the first T 1 and the second T2 high-current semiconductor component have common conducting plates 61 of T1 and 62 of T2, also connected to the first component conductor 71 of the first high-current semiconductor component T1. In other words, the first number of conducting plates 61 of T1 are the same conducting plates as the second number of conducting plates 62 of T2. Further, the third T3 and the fourth T4 high-current semiconductor component have common conducting plates 61 of T3 and 62 of T4, also connected to the second component conductor 72 of the fourth high-current semiconductor component T4. In other words, the first number of conducting plates 61 of T3 are the same conducting plates as the second number of conducting plates 62 of T4. In such a way all connections of the bridge are of very low resistance, either via conducting plates or via component conductors.
[0042] Fig. 7 shows an embodiment where control electronics 150 for controlling the high-current semiconductor components 100 is arranged on the same chip, which will reduce the cost of the final control system.
[0043] Even though the above detailed description is written for a transistor it might as well be used for other semiconductor elements such as diodes, thyristors etc.
[0044] Although the description above contains a plurality of specificities, these should not be construed as limiting the scope of the concept described herein but as merely providing illustrations of some exemplifying embodiments of the described concept. It will be appreciated that the scope of the presently described concept fully encompasses other embodiments which may become obvious to those skilled in the art, and that the scope of the presently described concept is accordingly not to be limited. Reference to an element in the singular is not intended to mean "one and only one" unless explicitly so stated, but rather "one or more." All structural and functional equivalents to the elements of the above- described embodiments that are known to those of ordinary skill in the art are expressly incorporated herein by reference and are intended to be encompassed hereby. Moreover, it is not necessary for an apparatus or method to address each and every problem sought to be solved by the presently described concept, for it to be encompassed hereby. In the exemplary figures, a broken line generally signifies that the feature within the broken line is optional.

Claims

1. A high-current semiconductor component (100) comprising: a first part (20), comprising: a semiconductor chip (1) in which a plurality of semiconductor elements (2) are integrated, each semiconductor element comprising at least a first and a second electrode element (3, 4) provided on a first side of the chip, and a first layer of conductors (13, 14) arranged on top of the first side of the semiconductor chip (1), the first layer of conductors comprising a number of first conductors (13) connected to the first electrode elements (3) and a number of second conductors (14) connected to the second electrode elements (4), the first and second conductors (13, 14) being fewer than the first and the second electrode elements (3, 4), and a second part (60) arranged on top of the first part on the first layer of conductors (13, 14), after the first part has been produced, the second part (60) comprising: a plurality of substantially parallel conducting plates (61 , 62), each conducting plate having a distal end and a proximal end, the proximal end facing the first layer of conductors (13, 14) and the distal end facing away from the first layer of conductors, the plurality of conducting plates (61 , 62) comprising a number of first conducting plates (61) connected with their proximal ends to the number of first conductors (13) and a number of second conducting plates (62) connected with their proximal ends to the number of second conductors (14), the first and second conducting plates (61 , 62) being fewer than the first and second conductors (13, 14); a first component conductor (71) connected to the distal ends of the number of first conducting plates (61), and a second component conductor (72) connected to the distal ends of the number of second conducting plates (62), the high-current semiconductor component (100) further comprising stud bonds, copper pillars or solder bumps (65) arranged on the number of first and second conductors (13, 14) of the first part (20), and wherein the plurality of conducting plates (61 , 62) of the second part (60) are connected with their proximal ends to the number of first or second conductors (13, 14) via the stud bonds, copper pillars or solder bumps (65).
2. High-current semiconductor component (100) according to claim 1 , wherein the first part (20) further comprises a second layer of conductors (10, 11) arranged in between the semiconductor elements (2) and the first layer of conductors (13, 14), the second layer of conductors comprising third conductors
(10) connected to the first electrode elements (3) and fourth conductors (11) connected to the second electrode elements (4), the third conductors (10) further being connected to the number of first conductors (13) and the fourth conductors
(11) being connected to the number of second conductors (14), the third and fourth conductors (10, 11) being fewer than the first and second electrode elements (3, 4) but more numerous than the first and second conductors (13, 14).
3. High-current semiconductor component (100) according to claim 1 or 2, wherein the number of first and second conductors (13, 14) are arranged in parallel, alternating between first conductor (13) and second conductor (14), and wherein the number of first and second conductor plates (61 , 62) are arranged in parallel, alternating between first conductor plate (61) and second conductor plate (62).
4. High-current semiconductor component (100) according to any of the preceding claims, wherein the number of first and second conductor plates (61 ,
62) are arranged substantially perpendicular to the number of first and second conductors (13, 14).
5. High-current semiconductor component (100) according to claim 4, wherein the first layer of conductors (13, 14) extends in an x-y plane of a Cartesian coordinate system and the plurality of conducting plates (61 , 62) extend in an x-z plane of the Cartesian coordinate system.
6. High-current semiconductor component (100) according to any of the preceding claims, wherein the first and second conductor plates (61 , 62) each has an x-extension parallel with the first layer of conductors (13, 14) wherein in the x- extension at a first part (61c, 62c) of the x-extension where the first component conductor (71) is arranged, the first conductor plates (61) extend further away from the first layer of conductors (13, 14) than the second conductor plates (62), and at a second part (61 d, 62d) of the x-extension where the second component conductor (72) is arranged, the second conductor plates (62) extend further away from the first layer of conductors (13, 14) than the first conductor plates (61).
7. High-current semiconductor component (100) according to any of the preceding claims, wherein the first and second component conductors (71 , 72) are arranged substantially perpendicular to the number of first and second conductor plates (61 , 62).
8. High-current semiconductor component (100) according to any of the preceding claims, wherein the number of first and second conductor plates (61 ,
62) are massive metal plates and/or the first and second component conductors (71 , 72) are massive metal plates.
9. High-current semiconductor component system (200) comprising a plurality of high-current semiconductor components (100) according to any of the preceding claims, wherein the plurality of high-current semiconductor components (100) share electrodes by having common first or second component conductors (71 , 72) and/or common first or second conducting plates (61 , 62).
10. High-current semiconductor component system (200) according to claim 9, wherein the plurality of high-current semiconductor components are four high- current semiconductor components (100) connected in a bridge configuration so that a first (T 1 ) and a third (T3) high-current semiconductor component have a common second component conductor (72), a second (T2) and a fourth (T4) high- current semiconductor component have a common first component conductor (71), and the first (T1) and the second (T2) high-current semiconductor component have common conducting plates (61 of T1 and 62 of T2), also connected to the first component conductor (71) of the first high-current semiconductor component (T1), and the third (T3) and the fourth (T4) high-current semiconductor component have common conducting plates (61 of T3 and 62 of T4), also connected to the second component conductor (72) of the fourth high-current semiconductor component (T4).
PCT/SE2021/050152 2020-03-04 2021-02-24 High-current semiconductor components and systems WO2021177874A1 (en)

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