WO2021169860A1 - 晶圆支撑件、晶圆加工装置及晶圆加工方法 - Google Patents

晶圆支撑件、晶圆加工装置及晶圆加工方法 Download PDF

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Publication number
WO2021169860A1
WO2021169860A1 PCT/CN2021/077007 CN2021077007W WO2021169860A1 WO 2021169860 A1 WO2021169860 A1 WO 2021169860A1 CN 2021077007 W CN2021077007 W CN 2021077007W WO 2021169860 A1 WO2021169860 A1 WO 2021169860A1
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Prior art keywords
wafer
wall surface
support
wall
column
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PCT/CN2021/077007
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English (en)
French (fr)
Inventor
赵锺衡
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长鑫存储技术有限公司
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Publication of WO2021169860A1 publication Critical patent/WO2021169860A1/zh
Priority to US17/455,333 priority Critical patent/US20220076985A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a wafer support, a wafer processing device and a wafer processing method.
  • a conventional wafer processing device includes a furnace body, a wafer support member arranged in the furnace body, and a wind pipe for passing reaction gas into the furnace body.
  • the wafer to be reacted is placed on the wafer support, and the air pipe passes the reaction gas into the furnace body to react with the wafer, and the reacted gas is sucked out of the furnace body by the suction mechanism, and circulates in this way. After a few hours or more than ten hours of reaction time, the reaction gas reacts and deposits a thin film on the surface of the wafer.
  • the present application provides a wafer support including: a column, the side wall of the column includes a first wall surface facing the wafer, a second wall surface facing away from the wafer, and a connecting second wall surface.
  • Two third wall surfaces of a wall surface and a second wall surface, the first wall surface and the second wall surface are disposed oppositely, the two third wall surfaces are disposed oppositely, and the two third wall surfaces are disposed at an angle, and The distance between the two third wall surfaces gradually decreases in the direction close to the first wall surface; and one or more support blocks, one or more support blocks are sequentially spaced from top to bottom.
  • the support block is used to support the wafer.
  • the present application further provides a wafer support, including: a cylinder, the cylinder is an elliptical cylinder, the sidewall of the cylinder includes a first wall surface facing the wafer and a back surface The second wall surface of the wafer, the first wall surface is connected to the second wall surface, and the second wall surface is an elliptical cylindrical surface; and one or more supporting blocks, one or more supporting blocks in sequence from top to bottom The supporting blocks are arranged at intervals on the first wall surface, and the supporting blocks are used for supporting the wafer.
  • the present application also provides a wafer processing method, which uses the wafer processing device for wafer processing.
  • a wafer processing method which uses the wafer processing device for wafer processing.
  • Figure 1 is a schematic diagram of the structure of a conventional wafer support supporting a wafer
  • FIG. 2 is a side view of the structure of the wafer supporting member mounted on the wafer support according to an embodiment of the present invention
  • FIG. 3 is a schematic top view of the structure of the wafer support according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the state of the wafer support according to an embodiment of the present invention when a wafer is installed on the work;
  • FIG. 5 is a schematic top view of the structure of a wafer support according to another embodiment of the present invention.
  • FIG. 6 is a schematic top view of the structure of a wafer support according to another embodiment of the present invention.
  • FIG. 7 is a schematic top view of the structure of the wafer support according to still another embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of a wafer support according to still another embodiment of the present invention.
  • FIG. 9 is a schematic top view of the structure of the wafer support according to still another embodiment of the present invention.
  • FIG. 10 is a schematic structural diagram of a wafer support according to still another embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of a wafer support according to still another embodiment of the present invention.
  • FIG. 12 is a schematic structural diagram of a wafer processing apparatus according to an embodiment of the present invention.
  • FIG. 13 is a schematic diagram of a structure of a wafer support member supporting a wafer according to an embodiment of the present invention.
  • Wafer support 11. Cylinder; 111, first wall; 112, second wall; 113, third wall; 12, support block; 13, vent; 20, wafer; 30, reactor body 40. Air duct; 50. Suction mechanism; 60. Rotating table; 70. Wafer support; 71. Cylinder; 72. Support block.
  • the thickness of the film on the surface portion of the wafer corresponding to the support is lower than the thickness of the film on other portions of the wafer, and the thickness uniformity of the film on the surface of the wafer is low, resulting in poor quality of wafer products.
  • first and second are only used for description purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include at least one of the features.
  • “plurality” means at least two, such as two, three, etc., unless otherwise specifically defined.
  • a conventional wafer processing apparatus includes one or more wafer supports 70.
  • One or more wafer support members 70 are arranged at intervals around the periphery of the wafer 20, and the wafer 20 is synchronously placed on the one or more wafer support members 70 and simultaneously supported by the one or more wafer support members 70.
  • the support effect is relatively good. stable.
  • the conventional wafer support 70 includes a column 71 with a semicircular or approximately semicircular cross-section, and one or more supports arranged on the straight side of the column 71 from top to bottom. Block 72. The wafer 20 to be processed is placed on the support block 72.
  • the air duct is arranged on the back of the column 71, and the mouth of the air pipe faces the arc-shaped side surface of the column 71.
  • the reaction gas is blown toward the corresponding wafer 20 to deposit a thin film on the surface of the wafer 20.
  • the height of the column 71 is generally 1m to 2m, and the width of the column 71 is generally more than 2cm.
  • the column 71 acts as a barrier to the reactive gas, causing a part of the reactive gas to not flow directly to the wafer 20 corresponding to the support.
  • the amount of gas on the surface of the wafer 20 corresponding to the support block 72 is reduced, and the thickness of the film deposited on the surface of the wafer 20 corresponding to the support block 72 is reduced; on the other hand, the column The width of the body 71 is relatively wide.
  • the column 71 also acts as a barrier, not only causing the reaction gas to stay on the wafer support.
  • the area 70 reacts to produce by-product particles, which will also adhere to the surface of the column 71 and the support block 72, and the by-product particles are not easily drawn out of the furnace by the suction mechanism, thereby affecting the crystal Round 20 product quality.
  • a wafer support 10 includes a pillar 11 and a support block 12.
  • the side wall of the column 11 includes a first wall surface 111 facing the wafer 20, a second wall surface 112 facing away from the wafer 20, and two third wall surfaces 113 connecting the first wall surface 111 and the second wall surface 112.
  • the first wall surface 111 is opposite to the second wall surface 112.
  • the two third wall surfaces 113 are arranged opposite to each other, the two third wall surfaces 113 are arranged at an included angle, and the distance between the two third wall surfaces 113 is gradually closer to the first wall surface 111. Decrease.
  • the side wall of the column 11 includes a first wall surface 111, a second wall surface 112, and two third wall surfaces 113, the two third wall surfaces 113 are arranged at an angle, and the two third wall surfaces
  • the distance between 113 is gradually reduced in the direction close to the first wall 111, that is, the cross section of the column 11 is or is approximately a fan-shaped surface, and the side wall of the column 11 can avoid blocking the air duct 40 as much as possible.
  • the reaction gas discharged from the mouth of the wafer contacts the wafer 20, so that the reaction gas discharged from the mouth of the duct 40 can evenly flow over the entire surface of the wafer 20.
  • the wafer 20 corresponds to the amount of gas on the surface of the support block 12.
  • the gas volume in other parts of the wafer 20 is basically the same, and the thickness of the film deposited on the surface of the wafer 20 corresponding to the support block 12 is basically the same as the thickness of the film in the other parts of the wafer 20, which means that the wafer can be improved.
  • the uniformity of the deposition thickness at the edge of the wafer 20 improves the quality of the wafer 20 product.
  • the width of the column 11 is relatively reduced. In the process of pumping the reacted gas corresponding to the wafer 20 in the furnace body by the suction mechanism 50, the blocking effect of the column 11 is also weakened, and the reaction gas is promptly removed.
  • the reaction furnace body 30 is drawn out, so as to avoid the reaction gas staying in the area of the wafer support 10 to produce by-product particles, and the by-product particles are also easily drawn out of the reaction furnace body 30 by the suction mechanism 50 .
  • the distance between the sides of the two third wall surfaces 113 close to the second wall surface 112 is W, and the W is not greater than 1 cm. In this way, the width of the column 11 is relatively reduced, that is, the blocking effect on the reaction gas is reduced, which facilitates the flow of the reaction gas over the surface of the wafer 20.
  • the first wall surface 111 is a flat surface
  • the third wall surface 113 is a flat surface
  • the third wall surface 113 is inclined with respect to the first wall surface 111, so
  • the included angle between the third wall surface 113 and the first wall surface 111 is a, and the a is 20°-50°.
  • the pillar 11 in the included angle range has a small blocking effect on the reaction gas; on the other hand, the structural strength of the pillar 11 can be ensured, and it is not easy to break, and can support multiple wafers 20.
  • the a is 30°-40°. In this way, while the structural strength of the column 11 can be better guaranteed, the barrier effect on the reaction gas is also small.
  • a is specifically, for example, 33°, 34°, 35°, 36°, 37°, 38° or 39°.
  • the second wall surface 112 is an arc-shaped surface.
  • the arc-shaped second wall surface 112 serves as a guide for the reactive gas discharged from the mouth of the air duct 40, which facilitates the reactive gas to flow above the wafer 20 and react with the wafer 20.
  • the first wall surface 111 is an arc-shaped surface
  • the second wall surface 112 is an arc-shaped surface
  • the third wall surface 113 is a flat surface.
  • the mouth of the arc-shaped surface of the first wall 111 may face the second wall 112 or face away from the second wall 112. It is also possible to reduce the blocking effect on the reactive gas, and to achieve better fluidity of the reactive gas above the wafer 20.
  • the column 11 is further provided with one or more ventilation holes 13, and the ventilation holes 13 are arranged correspondingly to the supporting block 12, and the ventilation holes 13 are formed by the The first wall surface 111 extends to the second wall surface 112.
  • the reactive gas discharged from the mouth of the air duct 40 can flow to the upper side of the wafer 20 through the vent 13 so that the amount of gas on the surface of the wafer 20 corresponding to the support block 12 is the same as other parts of the wafer 20.
  • the amount of gas is basically the same, and the thickness of the film deposited on the surface of the wafer 20 corresponding to the support block 12 is basically the same as the thickness of the film on the other parts of the wafer 20, that is, the thickness of the deposited film at the edge of the wafer 20 can be increased. Uniformity improves the quality of wafer 20 products.
  • the reacted gas above the wafer 20 can also be discharged to the outside through the vent 13.
  • the column 11 and the support block 12 are an integrated structure; the column 11 and the support block 12 are both ceramic bodies resistant to high temperature and high pressure. In this way, the ceramic body is resistant to high temperature and high pressure, does not chemically react with the reaction gas, and at the same time the material is hard, not easy to be damaged, and has a long service life.
  • the cylinder 11 and the support block 12 can also be made of other materials that are resistant to high temperature and pressure and do not chemically react with the reaction gas, which is not limited here.
  • the wafer support 10 further includes a heating element.
  • the heating element is arranged on the column 11, and the heating element is provided with a heat conducting plate correspondingly attached to the supporting block 12. In this way, while the reaction gas is introduced above the wafer 20, the heating element is synchronized to work. The heating element transfers heat to the support block 12 through the heat conducting plate, and the support block 12 transfers the heat to the edge of the wafer 20.
  • this can increase the reaction speed of the reactant gas at the local area, thereby increasing the thickness of the film at the edge of the wafer 20 corresponding to the local area, thereby achieving an increase in the thickness of the edge of the wafer 20 Uniformity, thereby improving the quality of wafer 20 products.
  • the heating element is detachably installed on the column 11. In this way, when the reaction temperature in the reaction furnace body 30 is above 200°C, the heating element is removed from the column body 11 and does not need to be installed on the column body 11, so that high-temperature gas in the reaction furnace body 30 can be avoided This will cause adverse effects on the heating element; in addition, when the heating element does not have any heating effect on the support block 12, the heating element can be removed from the column 11.
  • the shape of the support block 12 can be either a square shape, a triangular shape, or other shapes, which is not limited here.
  • a wafer support 10 includes a pillar 11 and a support block 12.
  • the cylinder 11 is an elliptical cylinder 11, and the sidewall of the cylinder 11 includes a first wall 111 facing the wafer 20 and a second wall 112 facing away from the wafer 20.
  • the first wall surface 111 is connected to the second wall surface 112, and the second wall surface 112 is an elliptical cylinder surface.
  • a number of support blocks 12, one or more of the support blocks 12 are arranged on the first wall surface 111 at intervals from top to bottom, and the support blocks 12 are used to support the wafer 20.
  • the side wall of the cylinder 11 includes a first wall 111 and a second wall 112
  • the second wall 112 is an elliptical cylinder, and the side wall of the cylinder 11 discharges from the mouth of the air duct 40
  • the resistance of the reaction gas is weakened, so that the reaction gas discharged from the mouth of the air duct 40 can flow evenly over the entire surface of the wafer 20.
  • the amount of gas on the surface of the wafer 20 corresponding to the support block 12 and the amount of The amount of gas in other parts is basically the same, and the thickness of the thin film deposited on the surface of the wafer 20 corresponding to the support block 12 is basically the same as the thickness of the thin film in other parts of the wafer 20, which means that the edge deposition of the wafer 20 can be improved.
  • the uniformity of thickness improves the quality of wafer 20 products.
  • the width of the column 11 is relatively reduced. In the process of pumping the reacted gas corresponding to the wafer 20 in the furnace body by the suction mechanism 50, the blocking effect of the column 11 is also weakened, and the reaction gas is promptly removed.
  • the reaction furnace body 30 is drawn out, so as to avoid the reaction gas staying in the area of the wafer support 10 to produce by-product particles, and the by-product particles are also easily drawn out of the furnace body by the suction mechanism 50.
  • the minor axis of the elliptical cylinder 11 is b, and the b is not greater than 0.5 cm. In this way, the width of the column 11 is relatively reduced, that is, the blocking effect on the reaction gas is reduced, which facilitates the flow of the reaction gas over the surface of the wafer 20.
  • the second wall surface 112 is a part of an elliptical cylindrical surface
  • the wall surface of the support block 12 is another part of an elliptical cylindrical surface. That is, the top view of the wafer support 10 is a complete ellipse.
  • a wafer processing apparatus includes the wafer support 10 described in any of the above embodiments, and further includes a reaction furnace body 30, an air duct 40, and a suction mechanism 50.
  • the wafer support 10 is installed in the reaction furnace body 30, the air pipe 40 is used to pass the reaction gas into the reaction furnace body 30, and the suction mechanism 50 is used to transfer the reaction furnace body 30.
  • the reaction gas in the body 30 is evacuated out of the reaction furnace body 30.
  • the wafer processing apparatus includes the aforementioned wafer support 10, its technical effects are brought about by the wafer support 10, and the beneficial effects are the same as the beneficial effects of the wafer support 10, and will not be repeated here.
  • the plurality of wafer support members 10 are one or more of the wafer support members 10 being arranged at intervals around the circumference of the wafer 20.
  • One or more support blocks 12 of the wafer support 10 and one or more support blocks 12 of the wafer support 10 are arranged in a one-to-one correspondence.
  • the wafer 20 is synchronously installed on the support block 12 of the same plane of one or more wafer supports 10, and the fixing effect of the wafer 20 is relatively stable.
  • the number of wafer supports 10 can also be other, which is not limited here.
  • the wafer processing apparatus further includes a rotating worktable 60 arranged in the reaction furnace body 30.
  • the column 11 is connected to the rotating table 60.
  • the rotary table 60 is synchronously driven to rotate, and the wafer 20 is driven to rotate during the rotation of the rotary table 60, so that the reaction gas flows to the wafer more uniformly.
  • the reaction gas discharged from the mouth of the air duct 40 can flow evenly over the entire surface of the wafer 20.
  • the amount of gas on the surface of the wafer 20 corresponding to the support block 12 is comparable to that of other parts of the wafer 20.
  • the amount of gas is basically the same, and the thickness of the film deposited on the surface of the wafer 20 corresponding to the support block 12 is basically the same as the thickness of the film on the other parts of the wafer 20, that is, the uniformity of the deposition thickness at the edge of the wafer 20 can be improved. Improve the quality of wafer 20 products.
  • a wafer processing method uses the wafer processing method of the wafer processing apparatus described in any one of the above embodiments.
  • the above-mentioned wafer processing method adopts the method of wafer processing by the wafer processing device, and its technical effect is brought by the wafer processing device, and the beneficial effects are the same as those of the wafer processing device. Go ahead and repeat.

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Abstract

一种晶圆支撑件、晶圆加工装置及晶圆加工方法，晶圆支撑件包括柱体，柱体的侧壁包括面向晶圆的第一壁面、背向晶圆的第二壁面以及连接第一壁面与第二壁面的两个第三壁面，第一壁面与第二壁面相对设置，两个第三壁面相对设置，两个第三壁面呈夹角设置，且两个第三壁面之间的距离在靠近于第一壁面的方向上逐渐减小；以及一个或多个支撑块，一个或多个支撑块从上至下依次间隔地设置于第一壁面上，支撑块用于支撑晶圆。

Description

晶圆支撑件、晶圆加工装置及晶圆加工方法
相关申请交叉引用
本申请要求2020年02月29日递交的、标题为“晶圆支撑件、晶圆加工装置及晶圆加工方法”、申请号为2020101317349的中国申请，其公开内容通过引用全部结合在本申请中。
技术领域
本发明涉及一种晶圆支撑件、晶圆加工装置及晶圆加工方法。
背景技术
为了开发高附加值的高性能下一代半导体产品，技术正在朝着集成化设计规则的方向发展。传统的晶圆加工装置包括炉体、设置于炉体内的晶圆支撑件与用于向炉体内通入反应气体的风管。将待进行反应处理的晶圆放置于晶圆支撑件上，风管将反应气体通入到炉体内与晶圆发生反应，反应后的气体被抽吸机构抽离到炉体外，如此循环。经过几小时或十多小时的反应时间，反应气体发生反应后在晶圆的表面上沉积形成一层薄膜。
发明内容
根据多个实施例，本申请提供一种晶圆支撑件，包括：柱体，所述柱体的侧壁包括面向晶圆的第一壁面、背向所述晶圆的第二壁面以及连接第一壁面与第二壁面的两个第三壁面，所述第一壁面与所述第二壁面相对设置，两个所述第三壁面相对设置，两个所述第三壁面呈夹角设置，且两个所述第三壁面之间的距离在靠近于所述第一壁面的方向上逐渐减小；以及一个或多个支撑块，一个或多个支撑块从上至下依次间隔地设置于所述第一壁面上，所述支撑块用于支撑所述晶圆。
根据多个实施例，本申请还提供一种晶圆支撑件，包括：柱体，所述柱体为椭圆柱体，所述柱体的侧壁包括面向晶圆的第一壁面与背向所述晶圆的第二壁面，所述第一壁面与所述第二壁面相连，所述第二壁面为椭圆柱面； 以及一个或多个支撑块，一个或多个支撑块从上至下依次间隔地设置于所述第一壁面上，所述支撑块用于支撑所述晶圆。
根据多个实施例，本申请还提供一种晶圆加工方法，采用了所述的晶圆加工装置进行晶圆加工的方法。本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其它特征和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例或传统技术中的技术方案，下面将对实施例或传统技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为传统的晶圆支撑件支撑着晶圆的结构示意图；
图2为本发明一实施例所述的晶圆支撑件上装设晶圆的侧视结构图；
图3为本发明一实施例所述的晶圆支撑件的俯视结构示意图；
图4为本发明一实施例所述的晶圆支撑件上装设晶圆工作时的状态示意图；
图5为本发明另一实施例所述的晶圆支撑件的俯视结构示意图；
图6为本发明又一实施例所述的晶圆支撑件的俯视结构示意图；
图7为本发明再一实施例所述的晶圆支撑件的俯视结构示意图；
图8为本发明再一实施例所述的晶圆支撑件的结构示意图；
图9为本发明再又一实施例所述的晶圆支撑件的俯视结构示意图；
图10为本发明再又一实施例所述的晶圆支撑件的结构示意图；
图11为本发明再又一实施例所述的晶圆支撑件的结构示意图；
图12为本发明一实施例所述的晶圆加工装置的结构示意图；
图13为本发明一实施例所述的晶圆支撑件支撑着晶圆的结构示意图。
附图标记：
10、晶圆支撑件；11、柱体；111、第一壁面；112、第二壁面；113、第三壁面；12、支撑块；13、通风孔；20、晶圆；30、反应炉体；40、风管； 50、抽吸机构；60、旋转工作台；70、晶圆支撑件；71、柱体；72、支撑块。
具体实施方式
晶圆对应于支撑件的表面部位的薄膜的厚度低于晶圆的其它部位的薄膜的厚度，晶圆的表面上的薄膜的厚度均匀性较低，导致晶圆产品质量低下。
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似改进，因此本发明不受下面公开的具体实施例的限制。
在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本发明的描述中，需要理解的是，当一个元件被认为是“连接”另一个元件，可以是直接连接到另一个元件或者可能同时存在中间元件。相反，当元件为称作“直接”与另一元件连接时，不存在中间元件。
请参阅图1，一般地，传统的晶圆加工装置包括一个或多个晶圆支撑件70。一个或多个晶圆支撑件70绕晶圆20的周围隔设置，晶圆20同步放置于一个或多个晶圆支撑件70上由一个或多个晶圆支撑件70同步支撑，支撑效果较为稳固。具体而言，传统的晶圆支撑件70包括截面为半圆形或近似半圆形的柱体71，及由上至下依次设置于柱体71的平直的侧面上的一个或多个支撑块72。待进行加工处理的晶圆20放置于支撑块72上。风管设置于柱体71的背面，风管的口部对着柱体71的弧形的侧面。风管的口部向外排风时，将反应气体吹向对应的晶圆20，以在晶圆20的表面上沉积形成薄膜。为了保证晶圆支撑件70的结构强度，以稳定地承载住多个晶圆20。柱体71的高度一般在1m至2m，柱体71的宽度较宽通常在2cm以上。然而，风管中的反应气体吹向晶圆支撑件70的晶圆20的过程中，一方面，柱体71对反应气体起到阻挡作用，导致一部分反应气体不能直接流向晶圆20对应于支撑块 72的表面部位，从而导致晶圆20对应于支撑块72的表面部位的气体量减小，进而导致晶圆20对应于支撑块72的表面部位沉积形成薄膜的厚度降低；另一方面，柱体71的宽度较宽，通过抽吸机构将炉体内对应于晶圆20处的反应后的气体抽离的过程中，柱体71同样起到阻挡作用，不仅导致反应气体停留在晶圆支撑件70的区域发生反应产生副产物颗粒，该副产物颗粒还将附着于柱体71及支撑块72的表面上，且该副产物颗粒还不容易被抽吸机构抽离出炉体，进而影响到晶圆20产品质量。
在一个实施例中，请参阅图2至图4及图12，一种晶圆支撑件10，包括柱体11与支撑块12。所述柱体11的侧壁包括面向晶圆20的第一壁面111、背向所述晶圆20的第二壁面112以及连接第一壁面111与第二壁面112的两个第三壁面113。所述第一壁面111与所述第二壁面112相对设置。两个所述第三壁面113相对设置，两个所述第三壁面113呈夹角设置，且两个所述第三壁面113之间的距离在靠近于所述第一壁面111的方向上逐渐减小。所述支撑块12为一个或多个，一个或多个所述支撑块12从上至下依次间隔地设置于所述第一壁面111上，所述支撑块12用于支撑所述晶圆20。
上述的晶圆支撑件10，由于柱体11的侧壁包括第一壁面111、第二壁面112及两个第三壁面113，两个第三壁面113呈夹角设置，且两个第三壁面113之间的距离在靠近于第一壁面111的方向上逐渐减小，也就是柱体11的横截面为或近似为一个扇形面，柱体11的侧壁能尽可能地避免阻挡风管40的口部排出的反应气体接触晶圆20，这样风管40的口部排出的反应气体能均匀地流向到晶圆20的整个表面上方，晶圆20对应于支撑块12的表面部位的气体量与晶圆20的其它部位的气体量基本相同，进而晶圆20对应于支撑块12的表面部位沉积形成薄膜的厚度与晶圆20的其它部位的薄膜的厚度基本相同，也就是能提高晶圆20的边缘部位沉积厚度的均匀性，提高晶圆20产品质量。此外，柱体11的宽度相对减小，通过抽吸机构50将炉体内对应于晶圆20处的反应后的气体抽离的过程中，柱体11的阻挡作用同样减弱，反应气体及时地被抽离出反应炉体30，从而尽可能地避免反应气体停留在晶圆支撑件10的区域发生反应产生副产物颗粒，且该副产物颗粒也容易被抽吸机构50抽离出反应炉体30。
进一步地，请参阅图2至图4，两个所述第三壁面113靠近于所述第二壁 面112的一侧之间的距离为W，所述W不大于1cm。如此，柱体11的宽度相对减小，也就是对反应气体的阻挡作用减小，有利于反应气体在晶圆20的表面上方流动。
在一个实施例中，请参阅图2至图4，所述第一壁面111为平面，所述第三壁面113为平面，所述第三壁面113相对于所述第一壁面111倾斜设置，所述第三壁面113与所述第一壁面111之间的夹角为a,所述a为20°～50°。如此，一方面，该夹角范围的柱体11对反应气体的阻挡作用较小；另一方面，能够保证柱体11的结构强度，不容易断裂，能实现支撑住多个晶圆20。
进一步地，请参阅图2至图4及图7与图8，所述a为30°～40°。如此，能较好地保证柱体11的结构强度的同时，还对反应气体的阻挡作用较小。较好地，a具体例如为33°、34°、35°、36°、37°、38°或39°。
此外，具体而言，第二壁面112为弧形面。如此，弧形状的第二壁面112对风管40的口部向外排出的反应气体起到导向作用，有利于反应气体流动到晶圆20的上方并与晶圆20进行反应。
在另一个实施例中，请参阅图5及图6，所述第一壁面111为弧形面，所述第二壁面112为弧形面，所述第三壁面113为平面。第一壁面111的弧形面的口部可以面向第二壁面112，也可以背向第二壁面112。也能实现减小对反应气体的阻挡作用，能实现反应气体在晶圆20上方更好地流动性。
在一个实施例中，请参阅图2，所述柱体11上还设有一个或多个通风孔13，所述通风孔13与所述支撑块12对应设置，所述通风孔13由所述第一壁面111延伸到所述第二壁面112。如此，一方面，风管40的口部排出的反应气体可以通过该通风孔13流向晶圆20的上方，使得晶圆20对应于支撑块12的表面部位的气体量与晶圆20的其它部位的气体量基本相同，进而晶圆20对应于支撑块12的表面部位沉积形成薄膜的厚度与晶圆20的其它部位的薄膜的厚度基本相同，也就是能提高晶圆20的边缘部位沉积厚度的均匀性，提高晶圆20产品质量。另一方面，晶圆20上方的反应过后的反应气体也可以通过该通风孔13向外排放。
进一步地，所述柱体11与所述支撑块12为一体化结构；所述柱体11与所述支撑块12均为耐高温高压的陶瓷体。如此，陶瓷体耐高温高压，与反应气体不发生化学反应，同时材质硬，不易于损坏，使用寿命较长。当然，柱 体11与支撑块12也可以采用其它耐高温高压且不与反应气体发生化学反应的材料，在此不进行限定。
作为一个可选的方案，对于反应炉体30内的反应温度在100℃以内或者处于100℃到200℃之间时，所述的晶圆支撑件10还包括加热件。所述加热件设置于所述柱体11上，所述加热件设有对应贴合于所述支撑块12的导热板。如此，在将反应气体通入到晶圆20的上方的同时，使得加热件同步工作，加热件将热量通过导热板传递给支撑块12，由支撑块12将热量传递给晶圆20的边缘的局部部位，这样能实现增加该局部部位处的反应气体的反应速度，从而能增大该晶圆20的边缘部位对应于该局部部位的薄膜的厚度，即可实现提高晶圆20的边缘的厚度均匀性，从而提高晶圆20产品质量。
进一步地，加热件可拆卸地装设于柱体11上。如此，对于反应炉体30内的反应温度在200℃以上时，则将加热件从柱体11上拆卸下来，无需装设于柱体11上，这样便能避免反应炉体30内的高温气体对于加热件造成不良影响；此外，加热件也已经对支撑块12起不到任何的加热作用时，则可以将加热件从柱体11上拆卸取出。
进一步地，请参阅图2至图4及图7与图8，支撑块12的形状既可以是方形状，又可以是三角形状，或者还可以是其它形状，在此不进行限定。
在一个实施例中，请参阅图9至图12，一种晶圆支撑件10，包括柱体11及支撑块12。所述柱体11为椭圆柱体11，所述柱体11的侧壁包括面向晶圆20的第一壁面111与背向所述晶圆20的第二壁面112。所述第一壁面111与所述第二壁面112相连，所述第二壁面112为椭圆柱面。若干个支撑块12，一个或多个所述支撑块12从上至下依次间隔地设置于所述第一壁面111上，所述支撑块12用于支撑所述晶圆20。
上述的晶圆支撑件10，由于柱体11的侧壁包括第一壁面111与第二壁面112，第二壁面112为椭圆柱面，柱体11的侧壁对风管40的口部排出的反应气体的阻力作用减弱，这样风管40的口部排出的反应气体能均匀地流向到晶圆20的整个表面上方，晶圆20对应于支撑块12的表面部位的气体量与晶圆20的其它部位的气体量基本相同，进而晶圆20对应于支撑块12的表面部位沉积形成薄膜的厚度与晶圆20的其它部位的薄膜的厚度基本相同，也就是能提高晶圆20的边缘部位沉积厚度的均匀性，提高晶圆20产品质量。此外， 柱体11的宽度相对减小，通过抽吸机构50将炉体内对应于晶圆20处的反应后的气体抽离的过程中，柱体11的阻挡作用同样减弱，反应气体及时地被抽离出反应炉体30，从而尽可能地避免反应气体停留在晶圆支撑件10的区域发生反应产生副产物颗粒，且该副产物颗粒也容易被抽吸机构50抽离出炉体。
进一步地，请参阅图9至图11，所述椭圆柱体11的短轴为b,所述b不大于0.5cm。如此，柱体11的宽度相对减小，也就是对反应气体的阻挡作用减小，有利于反应气体在晶圆20的表面上方流动。
具体而言，请参阅图9至图11，第二壁面112为椭圆柱面的其中一部分，支撑块12的壁面为椭圆柱面的另一部分。也就是，晶圆支撑件10的俯视图为一个完整的椭圆形。
在一个实施例中，请参阅图12至图13，一种晶圆加工装置，包括上述任一实施例所述的晶圆支撑件10，还包括反应炉体30、风管40及抽吸机构50。所述晶圆支撑件10装设于反应炉体30内，所述风管40用于将反应气体通入到所述反应炉体30内，所述抽吸机构50用于将所述反应炉体30内的反应气体抽离出所述反应炉体30。
上述的晶圆加工装置，由于包括所述的晶圆支撑件10，其技术效果由晶圆支撑件10带来，有益效果与晶圆支撑件10的有益效果相同，在此不进行赘述。
进一步地，请参阅图12至图13，若干个晶圆支撑件10为，一个或多个所述晶圆支撑件10绕所述晶圆20的周围间隔设置。所述晶圆支撑件10的一个或多个支撑块12与所述晶圆支撑件10的一个或多个支撑块12一一对应设置。如此，将晶圆20同步装设于一个或多个晶圆支撑件10的同一平面的支撑块12上，晶圆20的固定效果较为稳定。具体而言，晶圆支撑件10为两个、三个或四个，便可以稳固地装设晶圆20。当然，晶圆支撑件10也可以为其它数量，在此不进行限定。
进一步地，请参阅图12至图13，所述的晶圆加工装置还包括设置于所述反应炉体30内的旋转工作台60。所述柱体11与所述旋转工作台60相连。如此，当将反应气体通入到反应炉体30的内部的过程中，同步驱动旋转工作台60进行转动，旋转工作台60转动过程中带动晶圆20转动，使得反应气体 更加均匀地流动到晶圆20的上方，风管40的口部排出的反应气体能均匀地流向到晶圆20的整个表面上方，晶圆20对应于支撑块12的表面部位的气体量与晶圆20的其它部位的气体量基本相同，进而晶圆20对应于支撑块12的表面部位沉积形成薄膜的厚度与晶圆20的其它部位的薄膜的厚度基本相同，也就是能提高晶圆20的边缘部位沉积厚度的均匀性，提高晶圆20产品质量。
在一个实施例中，一种晶圆加工方法，采用了上述任意一实施例所述的晶圆加工装置进行晶圆加工的方法。
上述的晶圆加工方法，由于采用了所述的晶圆加工装置进行晶圆加工的方法，其技术效果由晶圆加工装置带来，有益效果与晶圆加工装置的有益效果相同，在此不进行赘述。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出一个或多变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (17)

  1. 一种晶圆支撑件，包括：
    柱体，所述柱体的侧壁包括面向晶圆的第一壁面、背向所述晶圆的第二壁面以及连接第一壁面与第二壁面的两个第三壁面，所述第一壁面与所述第二壁面相对设置，两个所述第三壁面相对设置，两个所述第三壁面呈夹角设置，且两个所述第三壁面之间的距离在靠近于所述第一壁面的方向上逐渐减小；以及
    一个或多个支撑块，所述一个或多个支撑块从上至下依次间隔地设置于所述第一壁面上，所述支撑块用于支撑所述晶圆。
  2. 根据权利要求1所述的晶圆支撑件，其中两个所述第三壁面靠近于所述第二壁面的一侧之间的距离为W，所述W不大于1cm。
  3. 根据权利要求1所述的晶圆支撑件，其中所述第一壁面为平面，所述第三壁面为平面，所述第三壁面相对于所述第一壁面倾斜设置，所述第三壁面与所述第一壁面之间的夹角为a,所述a为20°～50°。
  4. 根据权利要求3所述的晶圆支撑件，其中所述a为30°～40°。
  5. 根据权利要求4所述的晶圆支撑件，其中所述a为33°、34°、35°、36°、37°、38°或39°。
  6. 根据权利要求1所述的晶圆支撑件，其中所述第一壁面为弧形面，所述第二壁面为弧形面，所述第三壁面为平面。
  7. 根据权利要求1所述的晶圆支撑件，其中所述柱体上还设有一个或多个通风孔，所述通风孔与所述支撑块对应设置，所述通风孔由所述第一壁面延伸到所述第二壁面。
  8. 根据权利要求1所述的晶圆支撑件，其中所述柱体与所述支撑块为一体化结构，且所述柱体与所述支撑块均为耐高温高压的陶瓷体。
  9. 根据权利要求1所述的晶圆支撑件，还包括加热件，设置于所述柱体上，所述加热件设有对应贴合于所述支撑块的导热板。
  10. 根据权利要求9所述的晶圆支撑件，所述加热件可拆卸地装设于所述柱体上。
  11. 一种晶圆支撑件，包括：
    柱体，所述柱体为椭圆柱体，所述柱体的侧壁包括面向晶圆的第一壁面 与背向所述晶圆的第二壁面，所述第一壁面与所述第二壁面相连，所述第二壁面为椭圆柱面；以及
    一个或多个支撑块，所述一个或多个支撑块从上至下依次间隔地设置于所述第一壁面上，所述支撑块用于支撑所述晶圆。
  12. 根据权利要求11所述的晶圆支撑件，其中还包括加热件，所述加热件设置于所述柱体上，所述加热件设有对应贴合于所述支撑块的导热板。
  13. 根据权利要求12所述的晶圆支撑件，其中所述椭圆柱体的短轴为b，所述b不大于0.5cm。
  14. 一种晶圆加工装置，包括如权利要求1或11任意一项所述的晶圆支撑件，所述晶圆支撑件为一个或多个，一个或多个所述晶圆支撑件绕所述晶圆的周围间隔设置，一个或多个所述晶圆支撑件的支撑块一一对应设置。
  15. 根据权利要求14所述的晶圆加工装置，还包括反应炉体、风管及抽吸机构；
    其中，所述晶圆支撑件装设于所述反应炉体内，所述风管用于将反应气体通入到所述反应炉体内，所述抽吸机构用于将所述反应炉体内的所述反应气体抽离出所述反应炉体。
  16. 根据权利要求15所述的晶圆加工装置，还包括设置于所述反应炉体内的旋转工作台，所述柱体与所述旋转工作台相连。
  17. 一种晶圆加工方法，采用了如权利要求14所述的晶圆加工装置进行晶圆加工的方法。
PCT/CN2021/077007 2020-02-29 2021-02-20 晶圆支撑件、晶圆加工装置及晶圆加工方法 WO2021169860A1 (zh)

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