WO2021169142A1 - Structure et procédé de production d'un panneau d'affichage miniature à delo à base de silicium - Google Patents

Structure et procédé de production d'un panneau d'affichage miniature à delo à base de silicium Download PDF

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Publication number
WO2021169142A1
WO2021169142A1 PCT/CN2020/101034 CN2020101034W WO2021169142A1 WO 2021169142 A1 WO2021169142 A1 WO 2021169142A1 CN 2020101034 W CN2020101034 W CN 2020101034W WO 2021169142 A1 WO2021169142 A1 WO 2021169142A1
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Prior art keywords
silicon
display panel
oled
anode
white light
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PCT/CN2020/101034
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English (en)
Chinese (zh)
Inventor
赖耀升
彭丰章
江建志
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恩利克（浙江）智能装备有限公司
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Publication of WO2021169142A1 publication Critical patent/WO2021169142A1/fr

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes

Definitions

  • the invention belongs to the field of OLED display panels, and more specifically relates to a structure and manufacturing method of a silicon-based OLED micro display panel.
  • Silicon-based OLED micro display panels use mature semiconductor CMOS technology to integrate high-density and complex drive circuits on monocrystalline silicon as an active drive backplane chip, and then match OLEDs to provide a single-chip micro-display solution . It has the characteristics of small size, light weight, high brightness, high contrast, high PPI, high integration, low response time, large viewing angle, wide operating temperature range and low power consumption. It is especially suitable for virtual reality such as AR/VR/MR. /Augmented/Mixed Reality scene near-eye display glasses and helmets.
  • silicon-based OLEDs From the structural point of view, the most obvious difference between silicon-based OLEDs and ordinary OLEDs is that the silicon-based OLED panels have removed the bottom glass plate and replaced them with silicon chips. It is mainly composed of IC manufacturing technology and OLED technology. It is different from traditional mobile phones, computers, and TV screens. Generally, the diagonal is less than 2 inches, and the pixel density is greater than 1500PPI.
  • a silicon-based OLED Because monocrystalline silicon wafers are opaque, the structure of a silicon-based OLED must be designed as a top-emitting OLED, so that light is emitted through the translucent top electrode.
  • the pixel density of the micro display panel is very high, up to 2000PPI or more.
  • the precision of the metal mask is insufficient.
  • RGB side-by-side full-color panels are not used to make full-color panels, but white-light OLEDs and color filters are used to make full-color panels.
  • the pixel size is only a few ⁇ m, which is an order of magnitude smaller than the thickness of the optical glue.
  • Figure 1 shows the first structure.
  • the traditional method is to attach the color filter 5 (CF) to the silicon-based white light OLED 2 with optical glue 4, which is a glass substrate 6 and a color filter from top to bottom.
  • Figure 2 shows the second structure.
  • SONY uses CF directly on the OLED (CF on OLED). Although the viewing angle a is increased, it must be in white light.
  • the process of making CF on OLED (W-OLED) is very difficult: the temperature cannot exceed 100°C, and the wet process cannot be used.
  • the present invention provides a color filter fabricated on an ultra-thin glass substrate, white light OLED is plated on the Si substrate, and then bonded and laser fused, which is less expensive than the prior art.
  • the TFP layer multi-layer thin film encapsulation
  • the TFP layer is removed, making the color filter closer to the white light OLED, which increases the white light OLED projection viewing angle, improves the viewing angle of the silicon-based OLED micro display panel, reduces the difficulty of the production process, and can produce ultra-high pixels Density (>3000PPI) miniature display panel.
  • a silicon-based OLED micro display panel structure comprising a silicon substrate, a TFT is arranged above the silicon substrate, an anode is arranged on the TFT, and a white light OLED is arranged on the anode.
  • a color filter is arranged above the white light OLED, and a glass substrate is arranged above the color filter.
  • the white light OLED is plated on the anode
  • the anode is plated on the TFT
  • the TFT is plated on the silicon substrate
  • the color filter is made on a glass substrate
  • the glass substrate and the silicon substrate are fixedly bonded by laser fusion sealing .
  • the glass substrate is ultra-thin glass.
  • an explosion-proof film is arranged above the ultra-thin glass.
  • the thickness of the ultra-thin glass is 30-150 microns.
  • the thickness of the color filter is 2-4 microns.
  • a method for manufacturing a silicon-based OLED micro display panel includes the following steps:
  • S3 Fabricate TFT on a silicon substrate, then fabricate an anode on the TFT, and then fabricate an SiO2 insulating layer.
  • the SiO2 insulating layer is coated with SiO2 on the anode spacing area and the periphery of the anode using the CVD/PVD method, and then dry engraved or etched to form SiO2 Insulating layer; then the white light OLED is plated on the anode, and the outer ring of the white light OLED is retained with an SiO2 insulating layer;
  • step S4 Align the glass substrate in step S2 with the silicon substrate in step S3, make the color filter face the white light OLED, and cure the UV glue by UV; then use laser fusion to combine the glass paste on the outer ring of the color layer with the white light OLED The SiO2 in the outer ring is fused to complete the production.
  • step S1 the color layer and the top surface of the BM are ground and flattened.
  • step S2 SiO2 is plated on the surface of the color layer by the CVD method.
  • Multi-layer film packaging still has a thickness of more than 10 ⁇ m.
  • the use of glass paste (Frit) packaging can make the white light OLED closer to the CF, improve the viewing angle, and can produce ultra-high pixel density (>3000PPI) Mini display panel;
  • ultra-thin glass and ultra-thin silicon wafers allow the micro display panel to have a certain degree of curvature, reducing image distortion when applied near the eye;
  • Explosion-proof film is coated on the ultra-thin glass to prevent the glass from breaking and causing damage when an accident occurs;
  • Fig. 1 is a schematic diagram of the first structure in the prior art
  • Figure 2 is a schematic diagram of a second structure in the prior art
  • FIG. 3 is a schematic diagram of the structure of the silicon-based OLED micro display panel of the present invention.
  • Fig. 5 is a schematic diagram when the glass substrate and the silicon substrate are not bonded
  • Fig. 6 is a schematic diagram after the glass substrate and the silicon substrate are bonded.
  • orientations and positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that The device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and cannot be construed as limiting the specific protection scope of the present invention.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. Therefore, the definition of “first” and “second” features may explicitly or implicitly include one or more of these features. In the description of the present invention, “several” and “several” mean two or two Above, unless otherwise specifically defined.
  • a structure of a silicon-based OLED micro display panel comprising a silicon substrate 1, a TFT is arranged on the silicon substrate 1, an anode 8 is arranged on the TFT, and a white light OLED 2 is arranged on the anode 8, and a color filter is arranged on the white light OLED 2 Sheet 5, a glass substrate 6 is arranged above the color filter 5.
  • the white light OLED2 is plated on the anode 8
  • the anode 8 is plated on the TFT
  • the TFT is plated on the silicon substrate 1.
  • the color filter 5 is made on the glass substrate 6, the glass substrate 6 and The silicon substrate 1 is fixed and bonded by laser fusion sealing.
  • the glass substrate 6 is ultra-thin glass with a thickness of 30-150 microns, and an explosion-proof film 7 is preferably provided on its upper surface.
  • the silicon substrate 1 is made of ultra-thin silicon wafers with a thickness of about 200 micrometers; the thickness of the white light OLED 2 is about 1 micrometer; the thickness of the color filter 5 is 2-4 micrometers; so that the miniature display panel can have A certain degree of curvature reduces image distortion when applied near the eye.
  • a method for manufacturing a silicon-based OLED micro display panel includes the following steps:
  • BM is coated on the glass substrate 6 and dried, and then RGB three-color graphics are made on the BM by the pigment dispersion method to form a color layer;
  • S3 Fabricate TFT on the silicon substrate 1, then fabricate the anode 8 on the TFT, and then fabricate the SiO2 insulating layer.
  • the SiO2 insulating layer is coated with SiO2 on the interval area of the anode 8 and the periphery of the anode 8 by the CVD/PVD method, and then dry engraved Or etching to form a SiO2 insulating layer; then the white light OLED2 is plated on the anode 8, and the outer ring of the white light OLED2 retains the SiO2 insulating layer;
  • step S4 Align the glass substrate 6 in step S2 with the silicon substrate 1 in step S3, and make the color filter 5 face the white light OLED2, and cure the UV glue by UV; then use laser fusion to bond the glass paste of the outer ring of the color layer It is fused with the SiO2 of the outer ring of the white light OLED2 to complete the production.
  • Cr is preferably used as the BM material.
  • the color layer and the top surface of the BM are smoothed and flattened.
  • step S2 SiO2 is plated on the surface of the color layer by the CVD method.
  • step S2 if multiple color filters 5 are produced on an ultra-thin glass substrate 6 at the same time in the actual production process, then UV glue is applied to the spaced area of the color filter 5 at this time; after step S4 , It is preferable to perform the cutting step, and then enter the normal module manufacturing process.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne une structure d'un panneau d'affichage miniature à DELO à base de silicium, celle-ci comprenant un substrat de silicium (1). Des TFT sont disposés sur le substrat de silicium (1); des anodes (8) sont disposées sur les TFT; des diodes électroluminescentes organiques (DELO) blanches (2) sont disposées sur les anodes (8) et des filtres colorés (5) sont disposés au-dessus des DELO blanches (2); un substrat en verre (6) est disposé au-dessus des filtres colorés (5); les DELO blanches (2) sont disposées par placage sur les anodes (8); les anodes (8) sont disposées par placage sur les TFT; les TFT sont disposés par placage sur le substrat de silicium (1); les filtres colorés (5) sont formés sur le substrat en verre (6); et le substrat en verre (6) ainsi que le substrat de silicium (1) sont liés de manière fixe au moyen d'un placage au laser. Les filtres colorés (5) sont formés sur le substrat en verre (6) ultra-mince, les DELO blanches (2) sont disposées par placage sur le substrat de silicium (1), et la liaison ainsi que le placage au laser sont ensuite effectués; en comparaison avec l'état de la technique, la couche TFP (encapsulation de film mince multicouche) (3) est éliminée, et les filtres colorés (5) sont plus près des DELO blanches (2), de telle sorte que l'angle de vue de projection des DELO blanches (2) est agrandi, élargissant ainsi l'angle de vue du panneau d'affichage miniature à DELO à base de silicium, réduisant la difficulté du processus de production et produisant une densité de pixels ultra élevée (> 3 000 PPI).
PCT/CN2020/101034 2020-02-28 2020-07-09 Structure et procédé de production d'un panneau d'affichage miniature à delo à base de silicium WO2021169142A1 (fr)

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CN202010127994.9 2020-02-28
CN202010127994.9A CN111192533A (zh) 2020-02-28 2020-02-28 一种硅基oled微型显示面板的结构与制作方法

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CN111192533A (zh) * 2020-02-28 2020-05-22 恩利克（浙江）智能装备有限公司 一种硅基oled微型显示面板的结构与制作方法
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