WO2021148060A1 - 一种利用光标定硅纳米线传感器的方法 - Google Patents

一种利用光标定硅纳米线传感器的方法 Download PDF

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WO2021148060A1
WO2021148060A1 PCT/CN2021/082171 CN2021082171W WO2021148060A1 WO 2021148060 A1 WO2021148060 A1 WO 2021148060A1 CN 2021082171 W CN2021082171 W CN 2021082171W WO 2021148060 A1 WO2021148060 A1 WO 2021148060A1
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silicon nanowire
nanowire sensor
light
response
expression
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PCT/CN2021/082171
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English (en)
French (fr)
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李铁
陈世兴
杨义
王跃林
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中国科学院上海微系统与信息技术研究所
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Publication of WO2021148060A1 publication Critical patent/WO2021148060A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means

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  • the invention relates to the technical field of sensors, and in particular to a method for positioning a silicon nanowire sensor by using a cursor.
  • silicon nanowire sensors have attracted the attention of many researchers.
  • the silicon nanowire sensor uses silicon as the basic material. Due to the different corrosion rates of silicon in different crystal orientations, the silicon nanowires can be obtained through the potassium hydroxide wet etching process. Compared with the processing methods of chemical growth or electron beam pattern exposure, the traditional wet etching process has a lower cost. Therefore, from the perspective of cost and abundant raw materials, silicon nanowire sensors have incomparable advantages over other types of silicon nanowire sensors.
  • the present invention discloses a method for positioning a silicon nanowire sensor by using a cursor.
  • the method includes:
  • the concentration of the sample to be tested corresponding to the target response current of the sample to be tested is determined.
  • the obtaining the photoresponse current of the modified silicon nanowire sensor under different light intensities in a predetermined test environment includes:
  • the photoresponse current output by the silicon nanowire sensor after each change of the light intensity is recorded.
  • the predetermined test environment includes any one or more of preset light intensity for testing, preset temperature for testing, and preset humidity for testing.
  • the duration of the preset time is at least greater than the signal output time used before the signal output by the silicon nanowire sensor is stabilized.
  • the preset rule includes: increasing or decreasing the gradient of the light intensity irradiated on the silicon nanowire sensor.
  • the method further includes:
  • the method further includes:
  • the light response function expression is determined.
  • the target object response function analytical formula for determining the target object response function expression includes:
  • the reference substance is a solution of undissolved solute
  • the target substance is a solution in which a preset ratio of calibration solute is dissolved.
  • the invention uses the light response of the silicon nanowire sensor to modulate and calibrate the response of the target.
  • the light response measurement of the silicon nanowire sensor is very convenient, the test result is stable, the repeatability is good, and it can be obtained based on the calibrated functional analytical test.
  • the concentration of the sample to be tested, the test is convenient, and the result is accurate.
  • the marking does not need to rely on expensive equipment, and the cost is low. During the marking process, it is non-destructive to the device itself and does not affect the subsequent use of the device.
  • Fig. 1 is a flow chart of the method for positioning a silicon nanowire sensor by using a cursor according to the present invention
  • Figure 2 is a schematic diagram of the intrinsic absorption process described in the embodiment of the present invention.
  • Fig. 3 is a response model diagram of the silicon nanowire sensor according to an embodiment of the present invention, in which:
  • Figure (a) is a schematic diagram of the carrier distribution model inside the silicon nanowire before light response.
  • Figure (b) is a schematic diagram of the carrier distribution model inside the silicon nanowire after light response.
  • Figure (c) is the photoresponse band diagram of silicon nanowires
  • Figure (d) is a schematic diagram of the light response of the silicon nanowire sensor
  • FIG. 5 is a light response curve diagram of the device b in the embodiment of the present invention.
  • Fig. 6 is a target response curve diagram of the device a described in the embodiment of the present invention.
  • FIG. 7 is a target response curve diagram of the device b described in the embodiment of the present invention.
  • Fig. 8 is a normal distribution fitting diagram described in an embodiment of the present invention.
  • Fig. 9 is a comparison diagram of the theoretical target response current and the actual target response current.
  • the present invention provides a method for positioning a silicon nanowire sensor by using a cursor. As shown in FIG. 1, the method includes:
  • the present invention intends to use the light response of the silicon nanowire sensor to modulate the response of the target, thereby obtaining a functional analytical formula that can be used for testing to obtain the concentration of the sample to be tested.
  • the light response described in this specification is: when the output signal of the silicon nanowire is stable, changing the light intensity around the silicon nanowire will cause the output signal to change. This is caused by the change in light intensity.
  • the output signal change is called the light response of the silicon nanowire sensor.
  • the silicon nanowire sensor is In the light response test, the surface of the silicon nanowire sensor is also modified.
  • the response of the silicon nanowire sensor described in this specification to the target object is: when the output signal of the silicon nanowire is stable, change the property of the target object tested by the silicon nanowire sensor, for example, change the target object
  • the concentration of the silicon nanowire sensor changes, the output signal changes. This change in the output signal caused by the change in the properties of the target is called the response of the silicon nanowire sensor to the target.
  • the surface modification process of the silicon nanowire sensor is as follows:
  • the above process of surface modification of the silicon nanowire sensor is only one solution.
  • the surface modification of the silicon nanowire sensor can be carried out through the following steps:
  • the surface modification of the silicon nanowire sensor is not limited to the above-mentioned solutions, but can also be other solutions in addition to the above-mentioned solutions.
  • specific selections can be made according to laboratory materials, which are not limited here.
  • the acquiring the photoresponse current of the modified silicon nanowire sensor under different light intensities in a predetermined test environment includes:
  • the predetermined test environment may include any one or more of the preset light intensity for testing, the preset temperature for testing, and the preset humidity for testing. In the specific test, it can be set according to actual needs and surrounding environment, and there is no limitation on this here.
  • the preset time should be at least longer than the signal output time used before the signal output by the silicon nanowire sensor is stabilized.
  • a certain change rule can be set for the light intensity irradiated on the silicon nanowire sensor, preferably, so The preset rule may be to increase or decrease the gradient of the light intensity irradiated on the silicon nanowire sensor to form a certain change rule.
  • the preset rule can be to increase the light intensity gradient irradiated on the silicon nanowire sensor, for example, the light power corresponding to the initial light intensity is 0W/m 2 , and the light corresponding to the terminating light intensity is 0 W/m 2.
  • the power is 120W/m 2
  • the gradient change is 20W/m 2 .
  • S104 Determine a photoresponse function analytical expression of the photoresponse function expression based on the photoresponse current;
  • step S104 determining a photoresponse function analytical formula based on the photoresponse current of the photoresponse function expression specifically includes the following steps:
  • P is selected in this embodiment. -Type silicon nanowires.
  • the absorption of radiant energy by semiconductor materials causes electrons to transition from a low energy level to a higher energy level. Therefore, photons with sufficient energy will cause electrons in the valence band to be excited, and jump over the forbidden band into the conduction band. A hole is left, that is, an electron-hole pair is formed.
  • This kind of absorption process in which the electrons in the conduction band are excited to transition into the conduction band due to the absorption of photons by the semiconductor, and the generation of electron-hole pairs is called intrinsic absorption.
  • the schematic diagram of the intrinsic absorption process is shown in Figure 2.
  • the band gap of silicon Eg 1.12Ev, for intrinsic absorption to occur, the energy of the photon must be greater than or equal to the band gap of silicon, that is
  • silicon nanowires must undergo intrinsic absorption, and the wavelength of incident light must be less than 1.1 ⁇ m. Part of the infrared, visible and ultraviolet light can cause intrinsic absorption of silicon.
  • the light response mechanism of silicon nanowires is quite different from that of bulk silicon.
  • the response models are shown in Figure 3 (a), (b), (c), and (d).
  • the photon is incident on the surface of the silicon nanowire, and the energy is absorbed by the valence electrons to generate electron-hole pairs. Affected by the interface state on the surface of the silicon nanowire, the electrons and holes separate to form a "shell-core” structure.
  • This "shell and core” structure greatly increases the lifetime of the generated non-equilibrium carriers and the gain current greatly increases.
  • ⁇ is the quantum yield, that is, the number of electron-hole pairs that can be excited by each photon
  • ⁇ is the absorption coefficient of the material
  • A is the cross-sectional area of the silicon nanowire
  • V is the length of the silicon nanowire
  • P is the incident light power, the unit is W/m2;
  • P 0 is the incident light power when the interface trap is just fully occupied
  • ⁇ is the carrier lifetime
  • ⁇ 0 is the carrier lifetime when the interface trap is just fully occupied
  • k is the attenuation factor of carrier lifetime.
  • R P K P ⁇ P ⁇ ⁇ (0,1)
  • 450nm blue light can be selected as the light source to provide illumination for device a and device b. It is determined that the light power corresponding to the initial light intensity is 0W/m 2 , and the light power corresponding to the end light intensity is 120 W/m 2 , and the light intensity is less than
  • the gradient change is 20W/m 2 , respectively test the photoresponse current of device a and device b under different light intensities, and calculate the change of gradient photoresponse current of device a and device b respectively. Based on the test results, draw the graphs respectively 4 The light response curve of the device a and the light response curve of the device b shown in FIG. 5, and the respective fitting results are given.
  • the gradient photoresponse current change ⁇ I 1 -I 0 , where I 0 is the output current of the silicon nanowire sensor tested when there is no light, and I 1 is the output current after the preset light intensity is applied.
  • the preset light can be changed according to the above-mentioned gradient.
  • the selected light source may be other light sources other than the above-mentioned 450 nm blue light, which is not limited here.
  • the amount of gradient change can also be set according to the needs of the test, which is not limited here.
  • the target response of silicon nanowires has a similar expression to its optical response, namely:
  • R C K C ⁇ C ⁇ ⁇ (0,1)
  • the target response test is continued on the modified device a and the modified device b.
  • the target substance is a serum solution with a solvent of 1%
  • the initial concentration of the target substance is determined to be 0 mol/L
  • the end concentration is 6 mol/L
  • the concentration gradient change is 1 mol/L.
  • Test device a and device b respectively Target response currents at different concentrations, and calculate the gradient target response current changes of device a and device b respectively. Based on the test results, draw the target response curve of device a as shown in Figure 6 and Figure 7 respectively.
  • the target response curve of device b is shown, and the respective fitting results are given.
  • the gradient of the light-responsive current variation ⁇ ' I 1' -I 0 ', where, I 0' is the output current of the silicon nanowire sensor zero target concentration tested, I 1 '
  • the predetermined concentration can be changed according to the above-mentioned gradient.
  • S106 Determine the target response function analytic expression of the target response function expression according to the light response function analytic expression and the environmental variable offset value.
  • the target response function expression of the silicon nanowire sensor is similar to the target object response function expression of the silicon nanowire sensor, if some quantitative relationship between the two function expressions can be determined, then According to the light response function expression of the silicon nanowire sensor, the target response function expression of the silicon nanowire sensor about the light response function expression of the silicon nanowire sensor is obtained. Specifically, the theoretical analysis is as follows:
  • ⁇ 01 q(n 01 ⁇ n +p 01 ⁇ p )
  • ⁇ 1 q ⁇ n 1 ⁇ n +q ⁇ p 1 ⁇ p
  • I is the number of photons passing through a unit area per unit time
  • t is the photon incidence time
  • the response of silicon nanowires to the target is mainly due to the accumulation of target molecules on the outer surface of the nanowire, which causes the surface potential of the silicon nanowire to change, resulting in a change in the internal carrier concentration, which causes the conductivity of the silicon nanowire to change.
  • the change is finally reflected in the macroscopic view, that is, the resistance of the silicon nanowire changes with the change of the concentration of the external target.
  • ⁇ , ⁇ , ⁇ , ⁇ , Ceq, and Qs can be regarded as constants for silicon nanowires, I is determined by the light source, and n 0 and p 0 are determined by the initial conditions of the test. Therefore, when the process conditions and experimental conditions remain unchanged, the light response of the silicon nanowire sensor and the target response do meet a certain quantitative relationship.
  • the surface of the silicon nanowire sensor is modified.
  • 14 silicon nanowire sensors are selected for surface modification and the target response test and light response test are performed, and the saturation response of the silicon nanowire sensor to the target and light is recorded respectively.
  • the test results are shown in the table 1.
  • the target response and light response of the silicon nanowire sensor have similar response functions, and satisfy a certain quantitative relationship.
  • the environmental variable bias value B is introduced to obtain the target response function expression of the silicon nanowire sensor regarding the expression of the light response function of the silicon nanowire sensor:
  • the function f(c) is the expression of the light response function of the silicon nanowire sensor.
  • the detection is based on the combination of the probes modified on the surface of the silicon nanowires and the target. If the target is too high, the probes on the surface will be exhausted. In this step, the target should be a solution with a lower concentration, for example, a solution with a concentration ranging from 1 mol/L to 10 mol/L can be selected.
  • analytic expression of the target response function for determining the expression of the target response function according to the analytic expression of the light response function and the bias value of the environmental variable includes:
  • this verification experiment also calculates the theoretical target response current based on the analytical formula of the target response function; and plots the theoretical target response current and the actual target as shown in Figure 9 Comparison chart of material response current.
  • the target response current at each concentration is calculated and compared with the actual tested current.
  • the comparison result is shown in Figure 9 below.
  • S108 Determine the concentration of the sample to be tested corresponding to the response current of the sample to be tested based on the analytical formula of the response function of the target substance.
  • it can be determined based on the analytic formula of the function.
  • the concentration of the sample to be tested corresponding to the response current of the sample to be tested, the sample to be tested is a sample whose concentration needs to be determined, and may be blood or the like.
  • the invention utilizes the light response of the silicon nanowire sensor to modulate the response of the sample to be tested.
  • the light response measurement of the silicon nanowire sensor is very convenient, the test result is stable, the repeatability is good, and the required function can be obtained based on the calibrated functional analytical test
  • the concentration of the sample to be tested is convenient for testing and accurate results.
  • the marking does not need to rely on expensive equipment, and the cost is low. During the marking process, it is non-destructive to the device itself and does not affect the subsequent use of the device.

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Abstract

一种利用光标定硅纳米线传感器的方法，包括：对硅纳米线传感器进行表面修饰（S100）；获取预定测试环境下已修饰硅纳米线传感器在不同光照强度下的光响应电流（S102）；基于光响应电流确定光响应函数表达式的光响应函数解析式（S104）；根据光响应函数解析式和环境变量偏置值，确定目标物响应函数表达式的目标物响应函数解析式（S106）；基于目标物响应函数解析式，确定待测样品的响应电流所对应的待测样品浓度（S108）。利用硅纳米线对光的吸收效率来评估硅纳米线传感器的性能，解决由于传感单元差异引起的传感器件响应效率不一致问题；该方法具有简单、高效、成本低、器件无损和不干扰后续器件使用的优点。

Description

一种利用光标定硅纳米线传感器的方法 技术领域：
本发明涉及传感器技术领域，尤其涉及一种利用光标定硅纳米线传感器的方法。
背景技术：
以硅纳米线作为敏感单元的传感器具有灵敏度高、成本低、响应快速等优点，因此硅纳米线传感器受到了众多研究者的关注。硅纳米线传感器以硅为基本材料，由于不同晶向的硅腐蚀速率不同，使得硅纳米线可以通过氢氧化钾湿法腐蚀工艺获得。相比于化学生长或者电子束图形曝光的加工方法，传统湿法腐蚀工艺成本更低，因此从成本和原料丰富的角度讲，硅纳米线传感器有着其他类型硅纳米线传感器不可比拟的优势。
采用传统湿法腐蚀工艺，由于分子扩散速率和腐蚀液浓度等细微差异，会出现在硅片不同区域腐蚀速率不同的现象，最终将导致硅片不同区域的硅纳米线尺寸出现细微偏差，影响器件整体一致性。使用不同批次或者不同硅片区域的硅纳米线传感器对同一个目标物进行测试，得到的测试结果并不相同，无法进行精确定量测试。因此，需要将传感器输出结果进行调制，使得不同硅纳米线传感器对同一目标物响应是相同的。
发明内容：
鉴于以上所述现有技术的缺点，本发明公开了一种利用光标定硅纳米线传感器的方法。
所述方法包括：
对所述硅纳米线传感器进行表面修饰；
获取预定测试环境下已修饰硅纳米线传感器在不同光照强度下的光响应电流；
基于所述光响应电流确定光响应函数表达式的光响应函数解析式；
根据所述光响应函数解析式和环境变量偏置值，确定目标物响应函数表达式的目标物响应函数解析式；
基于所述目标物响应函数解析式，确定待测样品的目标响应电流所对应的待测样品浓度。
进一步的，所述获取预定测试环境下已修饰硅纳米线传感器在不同光照强度下的光响应电流包括：
确定预定测试环境；
在预定测试环境下向所述硅纳米线传感器施加预设时间的预设电压；
按照预设规则改变照射在所述硅纳米线传感器上的光照强度；
记录每改变一次光照强度后，所述硅纳米线传感器所输出的光响应电流。
进一步的，所述预定测试环境包括测试用预设光照强度、测试用预设温度、测试用预设湿度中的任意一种或多种。
具体的，所述预设时间的时长至少大于所述硅纳米线传感器所输出的信号稳定之前所用的信号输出时间。
进一步的，所述预设规则包括：照射在所述硅纳米线传感器上的光照强度梯度增加或梯度减小。
进一步的，所述记录每改变一次光照强度后，所述硅纳米线传感器所输出的光响应电流之前，所述方法还包括：
判断所述硅纳米线传感器的输出信号是否饱和，
若是，停止对所述硅纳米线传感器进行光照。
进一步的，所述光响应函数表达式为Rp＝f(P)，所述目标物函数表达式为Rc＝Af(C)+B，其中，B为环境变量偏置值。
进一步的，所述基于所述光响应电流确定光响应函数表达式的光响应函数解析式之前，所述方法还包括：
基于所述光响应电流，确定所述光响应电流对应的光响应模型；
基于所述光响应模型，确定所述光响应函数表达式。
进一步的，根据所述光响应函数解析式和环境变量偏置值，确定目标物响应函数表达式的目标物响应函数解析式包括：
获取预定测试环境下已修饰硅纳米线传感器在参照物下的参照响应电流；
获取预定测试环境下已修饰硅纳米线传感器在目标物下的标定响应电流；
将参照响应电流值和标定响应电流值代入目标物函数表达式中，求出未知量A和未知量B；
将所求得的A值和B值代入所述目标物响应函数表达式中，得到目标物响应函数解析式。
进一步的，所述参照物为未溶解溶质的溶液，所述目标物为溶解有预设比例的标定溶质的溶液。
本发明利用硅纳米线传感器光响应对目标物响应进行调制标定，其硅纳米线传感器光响应测量十分方便，而且测试结果稳定，重复性好，且可以基于标定后的函数解析式测试获取所需要的待测样品浓度，测试方便，结果准确。且，相比利用其他的表征手段，光标定不需要依赖昂贵的设备，成本低，在光标定过程中，对器件本身是无损的，不影响器件后续使用。
附图说明：
图1是本发明所述的利用光标定硅纳米线传感器的方法流程图；
图2是本发明实施例中所述的本征吸收过程的原理图；
图3是本发明实施例所述的硅纳米线传感器的响应模型图，其中：
图(a)为光响应前硅纳米线内部载流子分布模型示意图，
图(b)为光响应后硅纳米线内部载流子分布模型示意图，
图(c)为硅纳米线光响应能带图；
图(d)为硅纳米线传感器光响应示意图；
图4是本发明实施例中所述的器件a的光响应曲线图；
图5是本发明实施例中所述的器件b的光响应曲线图；
图6是本发明实施例中所述的器件a的目标物响应曲线图；
图7是本发明实施例中所述的器件b的目标物响应曲线图；
图8是本发明实施例中所述的正态分布拟合图；
图9是所述理论目标物响应电流和实际目标物响应电流的比较图。
具体实施方式：
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。为解决现有技术中存在的问题，本发明提供了一种利用光标定硅纳米线传感器的方法，如图1所示，所述方法包括：
S100、对所述硅纳米线传感器进行表面修饰；
具体的，本发明意在利用硅纳米线传感器光响应对目标物响应进行调制，从而得到可用于测试获取待测样品浓度的函数解析式。
可以理解的是，本说明书中所述的光响应为：在硅纳米线输出信号稳定的情况下，改变硅纳米线周围的光照强度，其输出信号发生变化，这种由光照强度发生变化导致的输出信号变化称为硅纳米线传感 器的光响应。
进一步的，因为在测试硅纳米线传感器对目标物的响应时需要进行表面修饰，因此，为了减少修饰过程对目标物响应的测试结果以及对光响应测试结果的影响，在对硅纳米线传感器进行光响应测试时，也对硅纳米线传感器进行表面修饰。
可以理解的是，本说明书中所述的硅纳米线传感器对目标物的相应为：在硅纳米线输出信号稳定的情况下，改变硅纳米线传感器所测试的目标物的性质，例如改变目标物的浓度，其输出信号发生变化，这种由目标物的性质发生变化导致的输出信号变化称为硅纳米线传感器对目标物的响应。
在一种可实施的方案中，对所述硅纳米线传感器进行表面修饰过程如下：
使用氧等离子体设备对硅纳米线表面处理30mi n，将处理之后的硅纳米线传感器放进2％的APTES乙醇溶液浸泡12h-24h。取出浸泡后的所述硅纳米线传感器，用乙醇溶液冲洗3遍，氮气吹干，放入120摄氏度烘箱内15分钟。向硅纳米线传感器表面滴加2.5％的戊二醛溶液，并放进避光的盒子内部2小时，之后取出用PBS溶液冲洗，氮气吹干。之后向硅纳米线传感器表面滴加0.5μM的PNA探针溶液，放进避光的盒子内部2小时，取出以后用PBS冲洗3遍，并用氮气吹干备用。
可以理解的是，上述对硅纳米线传感器进行表面修饰的过程仅是一种方案，在其它可实施的方案中，可以通过如下步骤对所述硅纳米 线传感器进行表面修饰：
首先用丙酮超声10分钟，乙醇冲洗30s，去离子水冲洗1分钟，氮气吹干，将硅纳米线表面清洗干净。浓硫酸和双氧水的混合溶液30ml(H2SO4:H2O2＝7:3)加热至90℃，硅纳米线表面多次连续滴加约30min，使表面产生更多羟基，变的更加亲水。去离子水冲洗1分钟，氮气吹干，放入2％的硅烷化试剂APTES乙醇溶液中浸泡12h-24h。用乙醇冲洗未反应的APTES 30s，接着氮气吹干，并放与120℃烘箱中5分钟烘干。向硅纳米线FET传感器表面滴加浓度为50μg/ml的抗体溶液，放进避光的盒子内部2小时，取出以后用PBS冲洗3遍，并用氮气吹干。之后向硅纳米线FET传感器表面滴加浓度为1mM的乙醇胺，放进避光盒子内部30分钟，取出以后用PBS冲洗3遍，并用氮气吹干备用。
可以理解的是，对所述硅纳米线传感器的表面修饰不仅限于上述方案，也可以是除上述方案的其它方案，在具体试验过程中，可以根据实验室材料进行具体选择，这里不做限定。
S102、获取预定测试环境下已修饰硅纳米线传感器在不同光照强度下的光响应电流；
具体的，所述获取预定测试环境下已修饰硅纳米线传感器在不同光照强度下的光响应电流包括：
S1020、确定预定测试环境；
可以理解的是，所述预定测试环境可以包括测试用预设光照强度、测试用预设温度、测试用预设湿度中的任意一种或多种。在具体 试验时，可以根据实际需要及周边环境进行设定，在这里，对此不做限定。
S1022、在预定测试环境下向所述硅纳米线传感器施加预设时间的预设电压；
可以理解的是，为获取所述硅纳米线传感器稳定的输出信号，所述预设时间应至少大于所述硅纳米线传感器所输出的信号稳定之前所用的信号输出时间。
S1024、按照预设规则改变照射在所述硅纳米线传感器上的光照强度；
可以理解的是，为了便于明显的观察出硅纳米线传感器在不同光照强度下的光响应的变化规律，可以对照射在硅纳米线传感器上的光照强度设定一定的改变规则，优选的，所述预设规则可以是将照射在硅纳米线传感器上的光照强度梯度增加或梯度减小，以形成一定的变化规律。
在一种可实施的方案中，该预设规则可以是将照射在硅纳米线传感器上的光照强度梯度增加，例如起始光照强度对应的光功率为0W/m 2，终止光照强度对应的光功率为120W/m 2，梯度变化量为20W/m 2。
S1026、记录每改变一次光照强度后，所述硅纳米线传感器所输出的光响应电流。
可以理解的是，还可以在执行步骤S1026之前，判断所述硅纳米线传感器的输出信号是否饱和，
若所述硅纳米线传感器的输出信号饱和，则停止对所述硅纳米线 传感器进行光照。
S104、基于所述光响应电流确定光响应函数表达式的光响应函数解析式；
具体的，步骤S104、基于所述光响应电流确定光响应函数表达式的光响应函数解析式具体包括如下步骤：
S1040、基于所述光响应电流，确定所述光响应电流对应的光响应模型；
具体的，在确定所述光响应函数解析式之前，可以先建立光响应模型，基于所述光响应模型确定光响应函数表达式R P＝f(P)，优选的，本实施例中选取P型硅纳米线。
具体的，半导体材料吸收辐射能导致电子从低能级跃迁到较高的能级，因此足够能量的光子会使得价带内的电子受到激发，越过禁带跃迁入导带内部，而在价带内部留下一个空穴，即形成电子空穴对。这种由于半导体吸收光子，使得导带内部的电子受到激发跃迁到导带内，并且产生电子空穴对的吸收过程称为本征吸收。本征吸收过程的原理图如图2所示。
硅的禁带宽度Eg＝1.12Ev，要发生本征吸收，光子的能量必须大于等于硅的禁带宽度，即
h v≥E g
因此硅纳米线要发生本征吸收，入射光的波长要小于1.1μm，部分红外，可见光和紫外光都能够使得硅发生本征吸收。
硅纳米线的光响应机理与体硅的光响应机理差别较大，其响应模 型如图3中(a)、(b)、(c)、(d)所示，
光子入射到硅纳米线表面，能量被价电子吸收，产生电子空穴对，受硅纳米线表面的界面态的影响，电子空穴分离，形成“壳核”结构。这种“壳核”结构使得产生的非平衡载流子的寿命大大增加，增益电流大幅度增加。
因此可以知道，光入射以后，硅纳米线内的非平衡载流子浓度
Figure PCTCN2021082171-appb-000001
其中：β为量子产额，即每个光子可以激发产生电子空穴对的数目；
α为材料的吸收系数；
A为硅纳米线的截面积；
V为硅纳米线的长度；
P为入射光功率，单位是W/m2；
P 0为界面陷阱刚刚被占满时的入射光功率；
τ为载流子寿命；
τ 0为界面陷阱刚刚被占满时的载流子寿命；
k为载流子寿命的衰减因子。
因此产生的光电流
Figure PCTCN2021082171-appb-000002
即最终得到光响应函数表达式：
R P＝K P·P α α∈(0,1)
S1042、基于所述光响应模型确定光响应函数表达式R P＝f(P)；
具体的，为得到光响应函数表达式中的未知量，得到最终的光响应函数解析式，设计如下实验：
取2个硅纳米线传感器(下述以器件a和器件b简述)，对器件a和器件b进行表面修饰。其具体的表面修饰方法已经在上文中介绍，这里不再赘述。
进一步的，可以选取450nm蓝光作为光源，为器件a和器件b提供光照，确定起始光照强度对应的光功率为0W/m 2，终止光照强度对应的光功率为120W/m 2，光照强度的梯度变化量为20W/m 2，分别测试器件a和器件b在不同光照强度下的光响应电流，并分别计算器件a和器件b的梯度光响应电流变化量，基于测试结果，分别绘制如图4所述的器件a的光响应曲线和如图5所示的器件b的光响应曲线，并给出各自的拟合结果。可以理解的是，所述梯度光响应电流变化量Δ＝I 1-I 0，其中，I 0为无光照时所测试的硅纳米线传感器的输出电流，I 1为施加预设光照强度后所测试的硅纳米线传感器的输出电流，预设光照可以依据上述梯度变化。
可以理解的是，所选取的光源可以为除上述所述的450nm蓝光之外的其它光源，这里不做限定。梯度变化量也可以根据试验需要设定，这里不做限定。
具体的，由拟合结果得到器件a的光响应函数解析式为R P＝ 0.806586·P 0.31661，器件b的光响应函数解析式为R P＝1.34952·P 0.3359504。
可以理解的是，由于硅纳米线的光响应主要来源于界面陷阱的捕获作用以及表面电荷对载流子的库仑力作用。这两个因素在硅纳米线的目标物响应中仍然占据主要作用，因此可以认为硅纳米线的目标物响应与其光响应具有相似的表达式，即：
R C＝K C·C β β∈(0,1)
为验证上述推论，设计如下实验，继续对修饰后的器件a和修饰后的器件b进行目标物响应的测试。具体的，该目标物是溶剂为1％的血清溶液，确定目标物的起始浓度为0mol/L，终止浓度为6mol/L，浓度梯度变化量为1mol/L，分别测试器件a和器件b在不同浓度下的目标物响应电流，并分别计算器件a和器件b的梯度目标物响应电流变化量，基于测试结果，分别绘制如图6所示的器件a的目标物响应曲线和如图7所示的器件b的目标物响应曲线，并给出各自的拟合结果。可以理解的是，所述梯度光响应电流变化量Δ'＝I 1'-I 0'，其中，I 0'为目标物浓度为零时所测试的硅纳米线传感器的输出电流，I 1'为施加预设浓度的目标物所测试的硅纳米线传感器的输出电流，预设浓度可以依据上述梯度变化。
具体的，由拟合结果得到器件a的表弟昂溶液响应函数解析式为R C＝0.793324·C 0.301365，器件b的目标物响应函数解析式为R C＝0.7787265·C 0.350318。
由上述试验结果可以看出，硅纳米线传感器的光响应和硅纳米线传感器目标物响应具有相似的响应函数表达式。
S106、根据所述光响应函数解析式和环境变量偏置值，确定目标物响应函数表达式的目标物响应函数解析式。
可以理解的是，由于硅纳米线传感器的光响应函数表达式和硅纳米线传感器的目标物响应函数表达式相似，那么，如果能够确定两个函数表达式之间的某些定量关系，则可以通过硅纳米线传感器的光响应函数表达式得到关于硅纳米线传感器光响应函数表达式的硅纳米线传感器目标物响应函数表达式，具体的，做理论分析如下：
对于硅纳米线，无光照时的电导率为
σ 01＝q(n 01μ n+p 01μ p)
设光注入的非平衡载流子浓度分别为Δn1和Δp1，则附加电导率Δσ1为
Δσ 1＝qΔn 1μ n+qΔp 1μ p
因此光电流的相对变化量
Figure PCTCN2021082171-appb-000003
对于本征吸收有附加载流子浓度
Figure PCTCN2021082171-appb-000004
其中：I为单位时间通过单位面积的光子数；
t为光子入射时间；
从公式可以看出受光激发产生的电子空穴对会随光子入射时间t的增加而线性增加，但是由于光激发产生电子空穴对的同时，复合过程也同样存在，因此光生载流子的数目不会一直增加。当载流子的产 生率等于复合率时，产生与复合在半导体内部形成动态平衡，此时光生载流子的数目不再增加。
假设光激发产生的电子寿命是τn，因此动态平衡时的电子浓度
Figure PCTCN2021082171-appb-000005
因此动态平衡时的电流相对变化量
Figure PCTCN2021082171-appb-000006
硅纳米线对目标物的响应主要是由于目标物分子在纳米线的外表面累积，使得硅纳米线的表面电势发生变化，造成内部载流子浓度的变化，从而引起硅纳米线的电导率的变化，最终体现在宏观上即硅纳米线的电阻随着外部的目标物的浓度的变化而变化。
硅纳米线电流
Figure PCTCN2021082171-appb-000007
随着标定物的浓度的增加，硅纳米线表面聚集的电荷浓度也越来越大。当表面的电荷面密度达到最大值时，记作Qs，硅纳米线的标定物响应电流达到最大值。此时的载流子浓度变化
Figure PCTCN2021082171-appb-000008
所以硅纳米线电流的相对变化量
Figure PCTCN2021082171-appb-000009
可以计算出光响应电流的相对变化量和标定物响应电流的相对变化量的比值是
Figure PCTCN2021082171-appb-000010
式中的μ、β、α、τ、Ceq和Qs对于硅纳米线而言可以认为是常数，I由光源决定，n 0、p 0由测试的初始条件决定。因此，当工艺条件和实验条件保持不变时，硅纳米线传感器的光响应和目标物响应确实满足一定的定量关系。
为了验证理论推导的正确性和硅纳米线传感器光响应和目标物响应之间的定量关系，设计实验如下：
首先对硅纳米线传感器进行表面修饰，本实验中选取14个硅纳米线传感器表面修饰后进行目标物响应测试和光响应测试，分别记录硅纳米线传感器对目标物和光的饱和响应，试验结果如表1。
Figure PCTCN2021082171-appb-000011
Figure PCTCN2021082171-appb-000012
表1
从表中可以看出，硅纳米线传感器在目标物中的响应和对光的响应存在一定的比例关系。实验中的目标物为0.01％血清溶液，从检测结果可以看出，14个器件对光和目标物的响应的比例系数在24～30之间。由此可以得到结论，在相同测试条件下，硅纳米线传感器的饱和光响应和饱和标定物响应成比例，即：
Figure PCTCN2021082171-appb-000013
为了得到更加可靠的比例系数K，将上边14组数据的比例系数求均值和标准差，进行如图8所示的正态分布拟合，从而得到最终的比例系数K＝27.80。
综合上述理论推导和实验结果，可以认为硅纳米线传感器的目标物响应和光响应具有相似的响应函数，且满足一定的定量关系。考虑到实际测试过程中共模信号的干扰，如温度等，引入环境变量偏置值B，从而得到关于硅纳米线传感器光响应函数表达式的硅纳米线传感 器目标物响应函数表达式：
R c＝Af(c)+B
其中函数f(c)是硅纳米线传感器的光响应函数表达式。
进一步的，需要说明的是，检测时是靠的硅纳米线表面修饰的探针和目标物的结合，如果使用的目标物过高的话，会导致表面的探针被消耗殆尽，在本步骤中，所述目标物应选择较低浓度的溶液，例如可以选择浓度范围在1mol/L～10mol/L的目标物溶液。
进一步的，所述根据所述光响应函数解析式和环境变量偏置值，确定目标物响应函数表达式的目标物响应函数解析式包括：
S1060、获取预定测试环境下已修饰硅纳米线传感器在参照溶液下的参照响应电流；
S1062、获取预定测试环境下已修饰硅纳米线传感器在目标物下的标定响应电流；
S1064、将参照响应电流值和标定响应电流值代入目标物函数表达式中，求出未知量A和未知量B；
S1066、将所求得的A值和B值代入所述目标物响应函数表达式中，得到目标物响应函数解析式。
具体的，为求得未知量A和未知量B，本实施例依据上述验证试验中的数据，并选取上文中计算到的器件b的光响应函数解析式R P＝1.34952·P 0.3359504，将测试器件b所用的目标物中的各浓度C进行坐标变换，令c＝1+lnC，把变换后的量c和对应的参照响应电流以及标定响应电流代入目标物响应函数表达式，求出目标物响应函数表达式 中的参数A＝1.73295和B＝0.0002，将求出的A值和求出的B值，代入所述目标物响应函数表达式中得到目标物响应函数解析式。
进一步的，在确定了目标物响应函数解析式之后，本验证试验还基于所述目标物响应函数解析式，计算理论目标响应电流；并绘制了如图9所述理论目标物响应电流和实际目标物响应电流的比较图。
具体的，基于上述得到的目标物响应函数解析式，计算各浓度下的目标物响应电流和实际测试的电流进行对比，对比结果如下图9所示。
从图9可以看出，通过该方法获得的理论值跟实际值吻合较好，证明了利用硅纳米线传感器光响应标定其目标物响应做法的有效性。
S108、基于所述目标物响应函数解析式，确定待测样品的响应电流所对应的待测样品浓度。
可以理解的是，基于上述标定过程，得到了标定后的响应电流关于浓度C的函数解析式，Rc＝Af(C)+B，在后续的应用中，即可以基于该函数解析式，确定待测样品的响应电流所对应的待测样品浓度，所述待测样品为需要测定浓度的样品，可以为血液等。
本发明利用硅纳米线传感器光响应对待测样品响应进行调制，其硅纳米线传感器光响应测量十分方便，而且测试结果稳定，重复性好，且可以基于标定后的函数解析式测试获取所需要的待测样品浓度，测试方便，结果准确。且，相比利用其他的表征手段，光标定不需要依赖昂贵的设备，成本低，在光标定过程中，对器件本身是无损的，不影响器件后续使用。
以上所述，以上实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。

Claims (10)

  1. 一种利用光标定硅纳米线传感器的方法，其特征在于，所述方法包括：
    对所述硅纳米线传感器进行表面修饰；
    获取预定测试环境下已修饰硅纳米线传感器在不同光照强度下的光响应电流；
    基于所述光响应电流确定光响应函数表达式的光响应函数解析式；
    根据所述光响应函数解析式和环境变量偏置值，确定目标物响应函数表达式的目标物响应函数解析式；
    基于所述目标物响应函数解析式，确定待测样品的响应电流所对应的待测样品浓度。
  2. 根据权利要求1所述的利用光标定硅纳米线传感器的方法，其特征在于，所述获取预定测试环境下已修饰硅纳米线传感器在不同光照强度下的光响应电流包括：
    确定预定测试环境；
    在预定测试环境下向所述硅纳米线传感器施加预设时间的预设电压；
    按照预设规则改变照射在所述硅纳米线传感器上的光照强度；
    记录每改变一次光照强度后，所述硅纳米线传感器所输出的光响应电流。
  3. 根据权利要求1或2所述的利用光标定硅纳米线传感器的方法，其特征在于，所述预定测试环境包括测试用预设光照强度、测试用预设温度、测试用预设湿度中的任意一种或多种。
  4. 根据权利要求2所述的利用光标定硅纳米线传感器的方法，其特征在于，所述预设时间的时长至少大于所述硅纳米线传感器所输出的信号稳定之前所用的信号输出时间。
  5. 根据权利要求2所述的利用光标定硅纳米线传感器的方法，其特征在于，所述预设规则包括：照射在所述硅纳米线传感器上的光照强度梯度增加或梯度减小。
  6. 根据权利要求2所述的利用光标定硅纳米线传感器的方法，其特征在于，所述记录每改变一次光照强度后，所述硅纳米线传感器所输出的光响应电流之前，所述方法还包括：
    判断所述硅纳米线传感器的输出信号是否饱和，
    若是，停止对所述硅纳米线传感器进行光照。
  7. 根据权利要求1所述的利用光标定硅纳米线传感器的方法，其特征在于，所述光响应函数表达式为R p＝f(P)，所述目标物函数表达式为Rc＝Af(C)+B，其中，B为环境变量偏置值。
  8. 根据权利要求7所述的利用光标定硅纳米线传感器的方法，其特征在于，所述基于所述光响应电流确定光响应函数表达式的光响应函数解析式之前，所述方法还包括：
    基于所述光响应电流，确定所述光响应电流对应的光响应模型；
    基于所述光响应模型，确定所述光响应函数表达式。
  9. 根据权利要求7所述的利用光标定硅纳米线传感器的方法，其特征在于，根据所述光响应函数解析式和环境变量偏置值，确定目标物响应函数表达式的目标物响应函数解析式包括：
    获取预定测试环境下已修饰硅纳米线传感器在参照物下的参照响应电流；
    获取预定测试环境下已修饰硅纳米线传感器在目标物下的标定响应电流；
    将参照响应电流值和标定响应电流值代入目标物函数表达式中，求出未知量A和未知量B；
    将所求得的A值和B值代入所述目标物响应函数表达式中，得到目标物响应函数解析式。
  10. 根据权利要求9所述的利用光标定硅纳米线传感器的方法，其特征在于，所述参照物为未溶解溶质的溶液，所述目标物为溶解有预设比例的标定溶质的溶液。
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