CN107195722A - 一种室温纳米线光子数可分辨探测器及制备方法 - Google Patents

一种室温纳米线光子数可分辨探测器及制备方法 Download PDF

Info

Publication number
CN107195722A
CN107195722A CN201710563628.6A CN201710563628A CN107195722A CN 107195722 A CN107195722 A CN 107195722A CN 201710563628 A CN201710563628 A CN 201710563628A CN 107195722 A CN107195722 A CN 107195722A
Authority
CN
China
Prior art keywords
photons
distinguishable
nanometers
detector
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710563628.6A
Other languages
English (en)
Inventor
胡伟达
骆文锦
王鹏
龙明生
陈效双
陆卫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Technical Physics of CAS
Original Assignee
Shanghai Institute of Technical Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Technical Physics of CAS filed Critical Shanghai Institute of Technical Physics of CAS
Priority to CN201710563628.6A priority Critical patent/CN107195722A/zh
Publication of CN107195722A publication Critical patent/CN107195722A/zh
Priority to CN201810092865.3A priority patent/CN108258064A/zh
Priority to CN201820160569.8U priority patent/CN207967011U/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of Radiation (AREA)
  • Thin Film Transistor (AREA)

Abstract

本发明公开了一种室温纳米线光子数可分辨探测器及制备方法。其特征在于，器件结构自下而上依次为是衬底、氧化物层、纳米线半导体和金属源漏电极。器件制备步骤是将CVD生长的具有丰富表面态纳米线转移到衬底上，运用紫外光刻或电子束光刻的方法结合传统剥离工艺制备金属电极作为源极和漏极，形成纳米线半导体场效应晶体管结构。器件首先需要在源极和栅极间施加负向栅压，使得场效应晶体管达到跨导最大处，通过纳米线的丰富表面态可以长时间俘获光生空穴，形成光栅效应，使得电流信号发生跳变，进而实现可分辨光子数探测。该光子探测器具有室温工作、光子数可分辨、高灵敏、响应快、稳定性好及低功耗等特点。

Description

一种室温纳米线光子数可分辨探测器及制备方法
技术领域
本发明涉及一种纳米线半导体光电探测器件，具体指一种室温纳米线光子数可分辨探测器及制备方法。
背景技术
单光子探测器依靠其极为灵敏的探测能力来记录光子—这一基本量子体系，它在在高分辨率的光谱测量、非破坏性物质分析、高速现象检测、精密分析、大气测污、生物发光、放射探测、高能物理、天文测光、光时域反射、量子密钥分发系统等领域有着广泛的应用。然而，其一，传统单光子探测器，比如光电倍增管、雪崩光电二极管和超导单光子探测器要么需要盖格模式的百伏驱动电压，要么需要极低温的工作条件，使得它们的操作相对复杂。其二，单光子探测器拥有光子数分辨能力的也只是屈指可数，其三，大部分单光子探测器需要分子束外延这样的高要求生长条件，给器件制备过程带来困难。因此，迫切需要研究一种独特的器件结构同时具有光子数分辨能力，易于制造(成本低廉)且可以在室温下工作(操作简单，节约能源)来满足单光子探测器在现代科学和工程的各个领域的应用。
一维半导体纳米线由于具有特殊的光、电、磁等物理化学性能及纳米结构的奇特性能，引起了科学家们的广泛关注，被公认为是发展下一代纳米光电器件和集成系统的基础，成为当今纳米材料研究领域的前沿。硫化镉(CdS)作为一种重要的直接带隙II-VI族化合物半导体材料，常温下禁带宽度为2.4eV，其具备半导体、光电、热电、压电、气敏和透明导电等特性，作为光电子器件可以在纳米激光器、发光二极管、光纤通讯、高速电子器件、光电子器件、生物传感器、光电探测器和通讯卫星以及太阳能电池等诸多技术领域有着广阔的应用价值。
虽然已有一些新型低温光子数可分辨探测器已被制备出来[Nature Photonics1，585(2007)]，但在室温下的光子数可分辨易制造的探测器还没有出现。
为了解决上述单光子探测器目前遇到的问题，本发明提出了一种室温纳米线可分辨光子数探测的方法。该方法是基于化学气相沉积(CVD)生长的硫化镉(CdS)制作场效应晶体管，由于CVD生长的CdS具有丰富的表面态、大的比表面积和高载流子迁移率，这三个性质可以一起助于纳米线在室温下响应一个光子且被探测到，其中表面态类似于量子点的作用，具有光栅(photongating)效应。
发明内容
本发明提出了一种室温纳米线光子数可分辨探测器及制备方法，实现了纳米线半导体场效应结构在室温光子探测领域的应用。
上述发明将纳米线及其光栅效应引入单光子探测结构，该探测器结构基于场效应晶体管，在室温下利用纳米线表面态俘获光生空穴，引起光栅效应，从而引起电流跳变，可实现器件的高灵敏、低功耗，光子数可分辨探测。
本发明指一种室温纳米线光子数可分辨探测器及制备方法，其特征在于，器件结构自下而上依次为：
-衬底1，
-氧化物层2、
-纳米线半导体3、
-金属源极4、金属漏极5，
其中衬底1为重掺杂的Si衬底，厚度0.3-0.5毫米；
其中氧化物层2为SiO2，厚度110±10纳米；
其中纳米线半导体3为CdS纳米线，且CdS纳米线表面具有丰富的表面态。沟道长度从0.1微米到5微米，直径从30纳米到300纳米；
其中金属源极4、金属漏极5为Cr和Au电极，下层Cr厚度为5-15纳米，上层Au厚度为45-75纳米。
本发明指一种室温纳米线光子数可分辨探测器及制备方法，其特征在于器件制备包括以下步骤：
1)氧化物层制备
在重掺杂Si衬底上通过热氧化法制备氧化物层二氧化硅，厚度为110纳米。
2)纳米线半导体制备及转移
利用Au催化剂，采用化学气相沉积方法在Si衬底上生长制备CdS纳米线，使CdS纳米线表面具有丰富的表面态。随后采用物理转移方法将CdS纳米线半导体(3)转移至氧化物层(2)表面。
3)纳米线半导体源漏电极的制备
采用紫外光刻技术或者电子束曝光技术，结合热蒸发及传统剥离工艺在制备金属源极(4)，漏极(5)，形成背栅结构纳米线半导体场效应结构器件；电极为铬、金，厚度分别为5-15纳米，45-75纳米。
在源极和栅极之间施加负向偏压，使晶体管工作在跨导最大处附近。根据高斯定理，此举对后续测量的光生电流能起到最大放大作用，同时负向偏压可以抑制一部分背景载流子。在器件工作时，源极漏极间通入微小恒定电压，检测电极两端电流。器件工作的状态示意图如图2所示。将入射光衰减到只有几个光子能到达器件时，且入射光子的能量大于纳米线的禁带宽度，产生光生电子空穴。空穴在负向偏压的作用下被引导到纳米线表面态中，且被长时间俘获，电子留在纳米线沟道中。被俘获的空穴一方面可以屏蔽一部分栅极电压，使得沟道电流有一定的回升，另一方面，被俘获的空穴可以通过电容耦合作用使得纳米线中的电子浓度增多，再一次使得沟道电流增大。这两个作用协同进行，在检测源漏电极两端的电流中可以观察到明显的跳变信号。纳米线半导体光子数可分辨探测器在不同状态下的响应图如图3所示。
本发明专利的优点在于：本发明基于场效应结构，在源极和栅极之间的负向偏压下，利用纳米线的表面态能有效地长时间俘获光生空穴，从而引起光栅效应且屏蔽负向偏压，使得一个光子所引起的电流改变能被检测到。此外，器件还具有室温工作、光子数可分辨、高灵敏、响应快、稳定性好、低功耗等特点。
附图说明
图1为纳米线半导体可分辨光子数探测器结构三维示意图。
图中：1衬底、2氧化物层、3纳米线半导体、4金属源极、5金属漏极。
图2纳米线半导体可分辨光子数探测器截面工作状态示意图。
图3纳米线半导体光子数可分辨探测器其中的纳米线在利用光栅效应响应一个光子前后工作示意图，(a)响应前，(b)响应后。
具体实施方式
下面结合附图对本发明的具体实施方式作详细说明：
本发明研制了纳米线半导体光子数可分辨探测器。通过基于场效应结构，在源极和栅极之间的负向偏压下，利用纳米线的表面态能有效地长时间俘获光生空穴，从而引起光栅效应且屏蔽负向偏压，使得一个光子所引起地电流改变能被检测到。从而显著提高了单光子探测器在在室温工作，光子数可分辨和易于制备的集成性能。
具体步骤如下：
1.衬底选择
选用厚度0.5毫米的重掺杂p型硅做为衬底。
2.氧化物介质层制备
通过热氧化发在硅衬底表面，氧化110纳米厚度二氧化硅。
3.纳米线半导体转移制备
用CVD方法生长CdS纳米线，使CdS纳米线表面具有丰富的表面态。随后将其转移至SiO2/Si衬底上，CdS的长度8微米，直径100纳米。
4.源极、漏极制备
利用紫外光刻方法制备源极、漏极电极图形；利用热蒸发技术制备金属电极，铬15纳米，金65纳米；结合传统剥离方法，剥离金属膜，获得源极、漏极电极，沟道宽度为0.5微米。
5.将制备好的纳米线半导体可分辨光子数探测器进行光子响应测试。对于不同的沟道长度(0.1微米到5微米)以及不同的纳米线直径(30纳米到300纳米)的可分辨光子数探测器，测试过程中均显示超高灵敏性，均具有光子分辨能力。
a).沟道长度0.1微米，纳米线直径30纳米的可分辨光子数探测器在室温下，可以分辨出1到5个光子。
b).沟道长度1微米，纳米线直径100纳米的可分辨光子数探测器在室温下，可以分辨出1到3个光子。
c).沟道长度5微米，纳米线直径300纳米的可分辨光子数探测器在室温下，可以分辨出1到2个光子。
在漏极和栅极间施加负向偏压3伏，使晶体管工作在跨导最大处附近，同时负向偏压可以抑制一部分背景载流子。器件工作时，源极漏极间通入微小恒定电压0.1伏，检测电极两端电流。将460纳米波长入射光衰减到只有几个光子能到达器件时，测量光电响应特性，产生光生空穴在负向偏压的作用下被激发到纳米线表面态中，且被长时间俘获，电子留在纳米线沟道中。被俘获的空穴一方面可以屏蔽一部分栅极电压，使得沟道电流有一定的回升，另一方面，被俘获的空穴通过电容耦合作用使得纳米线中的电子浓度增多，再一次使得沟道电流增大。这两个作用同时进行，在检测源漏电极两端的电流中可以观察到电流的明显跳变，且形成持续光生电流，实现纳米线半导体光子数可分辨探测器高灵敏探测。
结果说明本发明纳米线半导体可分辨光子数探测器及其制备方法，该结构器件，可有效室温探测光子、且可分辨光子数进而提高纳米材料半导体光子探测器件的实用性。

Claims (2)

1.一种室温纳米线光子数可分辨探测器，包括衬底(1)，氧化物层(2)、纳米线半导体(3)、金属源极(4)和金属漏极(5)，其特征在于：
所述的探测器结构自下而上依次为：衬底(1)，氧化物层(2)、纳米线半导体(3)、金属源极(4)、金属漏极(5)，其中：
所述的衬底(1)为重掺杂的Si衬底；
所述的氧化物层(2)为SiO2，厚度110±10纳米；
所述的纳米线半导体(3)为CdS纳米线，沟道长度从0.1微米到5微米，直径从30纳米到300纳米；
所述的金属源极(4)和金属漏极(5)为Cr和Au电极，下层Cr厚度为5-15纳米，上层Au厚度为45-75纳米。
2.一种制备如权利要求1所述室温纳米线可分辨光子数探测器的制备方法，其特征在于包括以下步骤：
1)通过热氧化法在衬底(1)上制备氧化物层(2)；
2)利用Au催化剂，采用化学气相沉积方法在Si衬底上生长制备CdS纳米线，使CdS纳米线表面具有丰富的表面态。随后采用物理转移方法将CdS纳米线(3)转移至氧化物层(2)表面；
3)采用紫外光刻技术或者电子束曝光技术，结合热蒸发及传统剥离工艺在制备金属源极(4)，漏极(5)，形成背栅结构纳米线半导体场效应结构器件。
CN201710563628.6A 2017-07-12 2017-07-12 一种室温纳米线光子数可分辨探测器及制备方法 Pending CN107195722A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201710563628.6A CN107195722A (zh) 2017-07-12 2017-07-12 一种室温纳米线光子数可分辨探测器及制备方法
CN201810092865.3A CN108258064A (zh) 2017-07-12 2018-01-31 一种室温纳米线光子数可分辨探测器及制备方法
CN201820160569.8U CN207967011U (zh) 2017-07-12 2018-01-31 一种室温纳米线光子数可分辨探测器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710563628.6A CN107195722A (zh) 2017-07-12 2017-07-12 一种室温纳米线光子数可分辨探测器及制备方法

Publications (1)

Publication Number Publication Date
CN107195722A true CN107195722A (zh) 2017-09-22

Family

ID=59883063

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201710563628.6A Pending CN107195722A (zh) 2017-07-12 2017-07-12 一种室温纳米线光子数可分辨探测器及制备方法
CN201810092865.3A Pending CN108258064A (zh) 2017-07-12 2018-01-31 一种室温纳米线光子数可分辨探测器及制备方法
CN201820160569.8U Active CN207967011U (zh) 2017-07-12 2018-01-31 一种室温纳米线光子数可分辨探测器

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201810092865.3A Pending CN108258064A (zh) 2017-07-12 2018-01-31 一种室温纳米线光子数可分辨探测器及制备方法
CN201820160569.8U Active CN207967011U (zh) 2017-07-12 2018-01-31 一种室温纳米线光子数可分辨探测器

Country Status (1)

Country Link
CN (3) CN107195722A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109950359A (zh) * 2019-03-29 2019-06-28 中国科学院上海技术物理研究所 一种利用二氧化铪钝化增强型低维纳米探测器及制备方法
CN110734036A (zh) * 2019-10-28 2020-01-31 南京大学 集成于纳米线的片上光谱仪及其探测器阵列的制备方法
CN113140650A (zh) * 2021-04-06 2021-07-20 天津大学 一种基于表面态吸收原理的垂直耦合透明光电探测器

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107195722A (zh) * 2017-07-12 2017-09-22 中国科学院上海技术物理研究所 一种室温纳米线光子数可分辨探测器及制备方法
CN111721710B (zh) * 2020-01-22 2021-08-27 中国科学院上海微系统与信息技术研究所 一种利用光标定硅纳米线传感器的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US20060284218A1 (en) * 2003-09-03 2006-12-21 The Regents Of The University Of California Nanoelectonic devices based on nanowire networks
CN101979723B (zh) * 2010-11-23 2012-07-04 东华大学 一种p型CdS纳米线的制备方法
JP2015149376A (ja) * 2014-02-06 2015-08-20 国立研究開発法人物質・材料研究機構 半導体光検出器
CN106449854B (zh) * 2016-10-13 2017-11-21 中国科学院上海技术物理研究所 全耗尽铁电侧栅单根纳米线近红外光电探测器及制备方法
CN107195722A (zh) * 2017-07-12 2017-09-22 中国科学院上海技术物理研究所 一种室温纳米线光子数可分辨探测器及制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109950359A (zh) * 2019-03-29 2019-06-28 中国科学院上海技术物理研究所 一种利用二氧化铪钝化增强型低维纳米探测器及制备方法
CN110734036A (zh) * 2019-10-28 2020-01-31 南京大学 集成于纳米线的片上光谱仪及其探测器阵列的制备方法
CN110734036B (zh) * 2019-10-28 2022-07-26 南京大学 集成于纳米线的片上光谱仪及其探测器阵列的制备方法
CN113140650A (zh) * 2021-04-06 2021-07-20 天津大学 一种基于表面态吸收原理的垂直耦合透明光电探测器

Also Published As

Publication number Publication date
CN207967011U (zh) 2018-10-12
CN108258064A (zh) 2018-07-06

Similar Documents

Publication Publication Date Title
CN207967011U (zh) 一种室温纳米线光子数可分辨探测器
Hu et al. High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials
CN105489693B (zh) 基于二维层状薄膜材料p‑g‑n异质结光电子器件
Soci et al. Nanowire photodetectors
CN105590985B (zh) 基于二维层材料p‑i‑n异质结光电子器件
CN107749433A (zh) 一种二维范德华异质结光电探测器及其制备方法
CN105762281A (zh) 一种铁电局域场增强型二维半导体光电探测器及制备方法
CN207529954U (zh) 一种二维范德华异质结光电探测器
CN107221575B (zh) 基于二维材料垂直肖特基结近红外探测器及制备方法
He et al. Enhanced responsivity of a graphene/Si-based heterostructure broadband photodetector by introducing a WS 2 interfacial layer
CN205723636U (zh) 一种铁电局域场增强型二维半导体光电探测器
Rezaei et al. Sensitivity limit of nanoscale phototransistors
CN103681895A (zh) 一种基于碳纳米管的红外成像探测器及其制备方法
CN102763229A (zh) 基于异常光导(eoc)效应的高分辨率光子检测方法和装置
Tran et al. Photoresponsive properties of ultrathin silicon nanowires
Tetseo et al. CuO nanowire-based metal semiconductor metal infrared photodetector
Tiwari et al. Improved optical performance in near visible light detection photosensor based on TFET
Guo et al. Visible-blind photodetector based on pin junction 4H-SiC vertical nanocone array
Ghalamboland et al. MoS 2/Si-based heterojunction bipolar transistor as a broad band and high sensitivity photodetector
Liu et al. High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared
Vasudevan et al. On the responsivity of UV detectors based on selectively grown ZnO nanorods
CN104167451A (zh) 基于量子点-碳纳米管的红外成像探测器及其制备方法
Jehad et al. High voltage response of graphene/4H-SiC UV photodetector with low level detection
Zhou et al. Sensitive photodetection based on the surface states of p-type silicon
ZHU et al. Broadband and fast photodetectors based on multilayer p-MoTe 2/n-WS 2 heterojunction with graphene electrodes

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170922

WD01 Invention patent application deemed withdrawn after publication