WO2021139152A1 - 场效应管的开关速度调节方法和装置 - Google Patents

场效应管的开关速度调节方法和装置 Download PDF

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WO2021139152A1
WO2021139152A1 PCT/CN2020/108355 CN2020108355W WO2021139152A1 WO 2021139152 A1 WO2021139152 A1 WO 2021139152A1 CN 2020108355 W CN2020108355 W CN 2020108355W WO 2021139152 A1 WO2021139152 A1 WO 2021139152A1
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field effect
resistance value
adjustment target
effect tube
resistance
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PCT/CN2020/108355
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English (en)
French (fr)
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钟博文
张大前
孙立宁
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苏州大学
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Priority to US17/441,002 priority Critical patent/US11817849B2/en
Publication of WO2021139152A1 publication Critical patent/WO2021139152A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches

Definitions

  • the application relates to a method and device for adjusting the switching speed of a field effect tube, and belongs to the field of electronic technology.
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • MOS transistors like transistors, also have an amplifying effect.
  • the drive switch is used to drive the on and off of the field effect transistor, and the drive switch is usually implemented as a triode. Specifically, the collector of the drive switch is connected to the gate of the field effect transistor through the gate resistor, the emitter of the drive switch is grounded through the emitter resistor, and the collector of the drive switch is also connected to the source resistor through the collector resistor. The other end of the resistor is connected to the source of the field effect tube; the drain of the field effect tube is connected to the current source.
  • the voltage V DS of the capacitance between the drain and the source (ie C ds ) is accompanied by the plateau of the voltage V GS of the capacitance between the gate and the source (ie C gs ).
  • the gate current i g is almost used to charge and discharge the inter-electrode capacitance C gd between the gate and the drain , so that the voltage of C ds rises or falls, while the voltage of C gs remains at the plateau voltage V P. This phenomenon is called the Miller effect of field effect tubes.
  • the present application provides a method and device for adjusting the switching speed of a field effect tube, which can solve the problem that the existing field effect tube slows the opening and closing speed due to the Miller effect.
  • This application provides the following technical solutions:
  • a method for adjusting the switching speed of a field effect tube is provided.
  • the field effect tube is connected to a driving switch, and the collector of the driving switch is connected to the gate of the field effect tube through a gate resistance.
  • the emitter of the drive switch is grounded through an emitter resistor, the collector of the drive switch is also connected to a source resistor through a collector resistor, and the other end of the source resistor is connected to the source of the field effect transistor;
  • the drain of the field effect transistor is connected to a current source; the method includes:
  • the operation of the field effect tube is controlled based on the adjusted resistance value.
  • the determining the first resistance value of the emitter resistance and/or the second resistance value of the collector resistance based on the adjustment target includes:
  • the adjustment target includes a first adjustment target for adjusting the opening speed, and a first resistance value of the emitter resistance is determined based on the first adjustment target; and/or,
  • the adjustment target includes a second adjustment target for adjusting a closing speed, and a second resistance value of the collector resistance is determined based on the second adjustment target.
  • the opening speed indicated by the first adjustment target has a negative correlation with the first resistance value: the closing speed indicated by the second adjustment target has a negative correlation with the second resistance value.
  • the determining the first resistance value of the emitter resistance based on the first adjustment target includes:
  • the first resistance value corresponding to the opening speed indicated by the first adjustment target is determined based on the first correspondence.
  • the determining the second resistance value of the collector resistance based on the second adjustment target includes:
  • the second resistance value corresponding to the closing speed indicated by the second adjustment target is determined based on the second correspondence.
  • the drive switch is a PNP type transistor.
  • the emitter resistance and the collector resistance are adjustable resistances.
  • a device for adjusting the switching speed of a field effect tube is provided.
  • the field effect tube is connected to a driving switch, and the collector of the driving switch is connected to the gate of the field effect tube through a gate resistance.
  • the emitter of the drive switch is grounded through an emitter resistor, the collector of the drive switch is also connected to a source resistor through a collector resistor, and the other end of the source resistor is connected to the source of the field effect transistor;
  • the drain of the field effect transistor is connected to a current source; the device includes:
  • a target acquisition module for acquiring the adjustment target of the switching speed of the field effect tube
  • a resistance value determination module configured to determine the first resistance value of the emitter resistance and/or the second resistance value of the collector resistance based on the adjustment target;
  • the operation control module is used to control the operation of the field effect tube based on the adjusted resistance value.
  • the resistance value determining module is configured to:
  • the adjustment target includes a first adjustment target for adjusting the opening speed, and a first resistance value of the emitter resistance is determined based on the first adjustment target; and/or,
  • the adjustment target includes a second adjustment target for adjusting a closing speed, and a second resistance value of the collector resistance is determined based on the second adjustment target.
  • the opening speed indicated by the first adjustment target has a negative correlation with the first resistance value: the closing speed indicated by the second adjustment target has a negative correlation with the second resistance value.
  • the beneficial effects of the present application are: obtaining the adjustment target of the switching speed of the field effect tube; determining the first resistance value of the emitter resistance and/or the second resistance value of the collector resistance based on the adjustment target; and controlling the field based on the adjusted resistance value Effect tube operation; it can solve the problem that the existing field effect tube will slow down the opening and closing speed due to the existence of the Miller effect; because the closing speed of the field effect tube can be adjusted by adjusting the resistance of the collector resistance according to the needs, And/or by adjusting the resistance value of the emitter resistance to adjust the opening speed of the field effect tube, the effect of adjusting the switching speed of the field effect tube as required can be achieved.
  • FIG. 1 is a schematic structural diagram of a switching speed adjustment system of a field effect tube provided by an embodiment of the present application
  • FIG. 2 is a schematic diagram of the closing process of the field effect transistor provided by an embodiment of the present application.
  • FIG. 3 is a schematic diagram of the opening process of the field effect transistor provided by an embodiment of the present application.
  • FIG. 4 is a flowchart of a method for adjusting the switching speed of a field effect tube provided by an embodiment of the present application
  • FIG. 5 is a block diagram of a device for adjusting the switching speed of a field effect tube provided by an embodiment of the present application.
  • FIG. 1 is a circuit diagram of a switching speed adjustment system of a field effect tube provided by an embodiment of the present application.
  • the switching speed adjustment system of a field effect tube includes a field effect tube M1 and a driving switch connected to the field effect tube M1 Q1.
  • the driving switch Q1 at the collector c is connected through a gate resistor R & lt gate g and g FET M1, the driving switch Q1 is an emitter resistor R e e is grounded through the emitter electrode, the driving switch Q1 through the collector c
  • the collector resistor R c is connected to the source resistor R s , the other end of the source resistor R s is connected to the source s of the field effect transistor M1; the drain d of the field effect transistor M1 is connected to the current source.
  • the emitter resistance and the collector resistance are adjustable resistances.
  • the resistance values of the emitter resistance and the collector resistance are variable within a corresponding range.
  • the field effect tube M1 has an inter-electrode capacitance, that is, the interelectrode capacitance C gd between the gate g and the drain d, and the electrode between the gate g and the source s.
  • the drive base e switch Q1 is further connected to a base resistor R e.
  • the type of driving switch Q1 is a PNP transistor.
  • the turn-off process can be divided into four stages for analysis, and the voltage and current change curves of each stage are shown in part (b) of FIG. 2.
  • the current flow is shown in part (a) in Figure 2.
  • the voltage V GS of C gs in the field effect tube M1 drops, and C gs discharges.
  • the current i g of the grid can be obtained from the formula (1-12), and i g is equal to The discharge current i 1 and i g decrease as the voltage between the electrodes decreases.
  • the transconductance effect of the FET it can be seen from formula (1-13) that the drain current i d decreases, and before the voltage V DS of C ds starts to change, the voltage V GS of C gs in the FET M1 will decrease To the platform voltage V P.
  • the platform voltage V P can be calculated by formula (1-14).
  • V P 2V DS0 +V TH (1-14)
  • V GSm is the initial value of the voltage of C gs during the turn-off process of the field effect tube M1
  • k n is the conduction factor of the field effect tube M1
  • V TH is the turn-on voltage of the field effect tube M1
  • V DS0 is the voltage of C ds The initial value during the turn-off process of the FET M1.
  • the current i 2 to limit the discharge capacity C gs of FET M1, so that the voltage of C gs V GS will remain unchanged at the platform voltage V P.
  • the gate current i g is approximately equal to the charging current i 2 , which can be calculated according to the following formula (1-15); and the drain current i d will also remain unchanged due to the constant C gs , which is determined by the following formula (1 -16) Calculated.
  • the voltage V DS of C ds continuously increases, and at the same time, the inter-electrode capacitance C gd is continuously charged.
  • the gate current i g is equal to the discharge current i 1 of the capacitor C gs and can be calculated according to formula (1-12).
  • the drain current i d also gradually decreases to zero as the voltage V GS decreases.
  • the gate current i g is almost used to supply the electrode.
  • the inter-capacitance C gd is charged, so that the voltage of C ds rises, while the gate-source voltage V GS remains unchanged at the plateau voltage V P.
  • the drive switch Q1 When the input signal V b is a step-down signal, the drive switch Q1 will be turned on more, causing the voltage drop on the resistance R c to rise, and then turn on the field effect tube M1, so that the voltage V DS of C ds in the field effect tube M1 decline. However, due to the influence of the capacitance between the electrodes of the field effect tube M1, a delay phenomenon occurs in the opening process of the M1.
  • the turn-on process can be divided into four stages for analysis.
  • the voltage and current change curves of each stage are shown in part (b) of FIG. 3, and the current The flow direction is shown in part (a) in Figure 3.
  • the current i 1 and the gate current i g can be obtained by the following formula (1-17).
  • the FET M1 is gradually turned on, and the voltage V GS of C gs- will rise to the turn-on voltage V TH .
  • the gate current i g can be calculated by the following formula (1-18).
  • FIG. 4 is a flowchart of a method for adjusting the switching speed of a field effect transistor provided by an embodiment of the present application.
  • the method is applied to the switching speed adjustment system of a field effect transistor shown in FIG. 1 as an example for description.
  • the method includes at least the following steps:
  • Step 401 Obtain an adjustment target of the switching speed of the field effect tube.
  • the adjustment target is used to indicate the opening speed and/or closing speed of the field effect tube.
  • Step 402 Determine the first resistance value of the emitter resistance and/or the second resistance value of the collector resistance based on the adjustment target.
  • the adjustment target includes a first adjustment target for adjusting the opening speed, and the first resistance value of the emitter resistance is determined based on the first adjustment target.
  • the adjustment target includes a second adjustment target for adjusting the closing speed, and a second resistance value of the collector resistance is determined based on the second adjustment target.
  • the opening speed indicated by the first adjustment target has a negative correlation with the first resistance value: the closing speed indicated by the second adjustment target has a negative correlation with the second resistance value.
  • determining the first resistance value of the emitter resistance based on the first adjustment target includes: obtaining a first correspondence relationship between the opening speed and the resistance value of the emitter resistance; and determining the first adjustment target indication based on the first correspondence relationship The opening speed corresponds to the first resistance value.
  • determining the second resistance value of the collector resistance based on the second adjustment target includes: acquiring a second correspondence relationship between the closing speed and the resistance value of the collector resistance; and determining the second adjustment target indication based on the second correspondence relationship The closing speed corresponds to the second resistance value.
  • Step 403 Control the operation of the field effect tube based on the adjusted resistance value.
  • the method for adjusting the switching speed of the field effect tube obtains the adjustment target of the switching speed of the field effect tube; and determines the first resistance value of the emitter resistance and/or the first resistance value of the collector resistance based on the adjustment target.
  • Two resistance value control the operation of the field effect tube based on the adjusted resistance value; it can solve the problem that the existing field effect tube will slow down the opening and closing speed due to the existence of the Miller effect; because the collector resistance can be adjusted according to the needs
  • the switching speed of the field effect tube can be adjusted as required.
  • FIG. 5 is a block diagram of a device for adjusting the switching speed of a field effect tube provided by an embodiment of the present application.
  • the device is applied to the switching speed adjustment system of a field effect transistor shown in FIG. 1 as an example for description.
  • the field effect tube is connected to the drive switch
  • the collector of the drive switch is connected to the gate of the field effect tube through the gate resistance
  • the emitter of the drive switch is grounded through the emitter resistance
  • the collector of the drive switch is also connected through the collector resistance.
  • To the source resistance the other end of the source resistance is connected to the source of the FET; the drain of the FET is connected to the current source;
  • the device includes at least the following modules: target acquisition module 510, resistance determination module 520 And operation control module 530.
  • the target obtaining module 510 is configured to obtain the adjustment target of the switching speed of the field effect tube
  • the resistance value determining module 520 is configured to determine the first resistance value of the emitter resistance and/or the second resistance value of the collector resistance based on the adjustment target;
  • the operation control module 530 is configured to control the operation of the field effect tube based on the adjusted resistance value.
  • the resistance value determining module 520 is configured to:
  • the adjustment target includes a first adjustment target for adjusting the opening speed, and a first resistance value of the emitter resistance is determined based on the first adjustment target; and/or,
  • the adjustment target includes a second adjustment target for adjusting a closing speed, and a second resistance value of the collector resistance is determined based on the second adjustment target.
  • the opening speed indicated by the first adjustment target has a negative correlation with the first resistance value: the closing speed indicated by the second adjustment target has a negative correlation with the second resistance value.
  • the switching speed adjustment device of the field effect tube adjusts the switching speed of the field effect tube
  • only the division of the above-mentioned functional modules is used as an example for illustration. In actual applications, it can be adjusted according to needs.
  • the above-mentioned function allocation is completed by different functional modules, that is, the internal structure of the switching speed adjustment device of the field effect tube is divided into different functional modules to complete all or part of the functions described above.
  • the switching speed adjustment device of the field effect transistor provided in the foregoing embodiment and the switching speed adjustment method embodiment of the field effect transistor belong to the same concept, and the specific implementation process is detailed in the method embodiment, which will not be repeated here.
  • the present application also provides a computer-readable storage medium in which a program is stored, and the program is loaded and executed by the processor to realize the switching speed of the field effect transistor of the foregoing method embodiment. Adjustment method.
  • this application also provides a computer product including a computer-readable storage medium in which a program is stored, and the program is loaded and executed by a processor to implement the above-mentioned method embodiments The switching speed adjustment method of the FET.

Abstract

本申请涉及一种场效应管的开关速度调节方法和装置，属于电子技术领域，场效应管与驱动开关相连，驱动开关的集电极通过栅极电阻与场效应管的栅极相连、驱动开关的发射极通过发射极电阻接地、驱动开关的集电极还通过集电极电阻连接至源极电阻，源极电阻的另一端与场效应管的源极相连；场效应管的漏极连接至电流源；该方法包括：获取场效应管开关速度的调节目标；基于调节目标确定发射极电阻的第一电阻值和/或集电极电阻的第二电阻值；基于调节后的电阻值控制场效应管运行；可以解决现有的场效应管由于米勒效应的存在会拖慢开启和关闭的速度的问题；达到根据需要调节场效应管的开关速度的效果。

Description

场效应管的开关速度调节方法和装置
本申请要求了申请日为2020年01月08日，申请号为202010017783.X的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及一种场效应管的开关速度调节方法和装置，属于电子技术领域。
背景技术
场效应管(Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFET)或称MOS管，与晶体管一样也具有放大作用。
场效应管应用于放大器中时通常与驱动开关相连。驱动开关用于驱动场效应管的开启和关闭，驱动开关通常实现为三极管。具体地，驱动开关的集电极通过栅极电阻与场效应管的栅极相连、驱动开关的发射极通过发射极电阻接地、驱动开关的集电极还通过集电极电阻连接至源极电阻，源极电阻的另一端与场效应管的源极相连；场效应管的漏极连接至电流源。
在上述连接关系中，漏极和源极之间的极间电容(即C ds)的电压V DS伴随栅极和源极之间的极间电容(即C gs)的电压V GS的平台期内，栅极电流i g几乎全部用于供栅极和漏极之间的极间电容C gd充放电，使得C ds的电压上升或下降，而C gs的电压保持在平台电压V P而不变，这种现象称为场效应管的米勒效应。
由于场效应管的米勒效应会拖慢场效应管开启和关闭的速度，因此如何调节场效应管开启和关闭的速度成为亟待解决的问题。
发明内容
本申请提供了一种场效应管的开关速度调节方法和装置，可以解决现有的场效应管由于米勒效应的存在会拖慢开启和关闭的速度的问题。本申请提供如下技术方案：
第一方面，提供了一种场效应管的开关速度调节方法，所述场效应管与驱动开关相连，所述驱动开关的集电极通过栅极电阻与所述场效应管的栅极相连、 所述驱动开关的发射极通过发射极电阻接地、所述驱动开关的集电极还通过集电极电阻连接至源极电阻，所述源极电阻的另一端与所述场效应管的源极相连；所述场效应管的漏极连接至电流源；所述方法包括：
获取所述场效应管开关速度的调节目标；
基于所述调节目标确定所述发射极电阻的第一电阻值和/或所述集电极电阻的第二电阻值；
基于调节后的电阻值控制所述场效应管运行。
可选地，所述基于所述调节目标确定所述发射极电阻的第一电阻值和/或所述集电极电阻的第二电阻值，包括：
所述调节目标包括用于调节开启速度的第一调节目标，基于所述第一调节目标确定所述发射极电阻的第一电阻值；和/或，
所述调节目标包括用于调节关闭速度的第二调节目标，基于所述第二调节目标确定所述集电极电阻的第二电阻值。
可选地，所述第一调节目标指示的开启速度与所述第一电阻值呈负相关关系：所述第二调节目标指示的关闭速度与所述第二电阻值呈负相关关系。
可选地，所述基于所述第一调节目标确定所述发射极电阻的第一电阻值，包括：
获取开启速度与所述发射极电阻的阻值之间的第一对应关系；
基于所述第一对应关系确定所述第一调节目标指示的开启速度对应的第一电阻值。
可选地，所述基于所述第二调节目标确定所述集电极电阻的第二电阻值，包括：
获取关闭速度与所述集电极电阻的阻值之间的第二对应关系；
基于所述第二对应关系确定所述第二调节目标指示的关闭速度对应的第二电阻值。
可选地，所述驱动开关为PNP型三极管。
可选地，所述发射极电阻和所述集电极电阻为可调电阻。
第二方面，提供了一种场效应管的开关速度调节装置，所述场效应管与驱动开关相连，所述驱动开关的集电极通过栅极电阻与所述场效应管的栅极相连、所述驱动开关的发射极通过发射极电阻接地、所述驱动开关的集电极还通过集电极电阻连接至源极电阻，所述源极电阻的另一端与所述场效应管的源极相连；所述场效应管的漏极连接至电流源；所述装置包括：
目标获取模块，用于获取所述场效应管开关速度的调节目标；
阻值确定模块，用于基于所述调节目标确定所述发射极电阻的第一电阻值和/或所述集电极电阻的第二电阻值；
运行控制模块，用于基于调节后的电阻值控制所述场效应管运行。
可选地，所述阻值确定模块，用于：
所述调节目标包括用于调节开启速度的第一调节目标，基于所述第一调节目标确定所述发射极电阻的第一电阻值；和/或，
所述调节目标包括用于调节关闭速度的第二调节目标，基于所述第二调节目标确定所述集电极电阻的第二电阻值。
可选地，所述第一调节目标指示的开启速度与所述第一电阻值呈负相关关系：所述第二调节目标指示的关闭速度与所述第二电阻值呈负相关关系。
本申请的有益效果在于：通过获取场效应管开关速度的调节目标；基于调节目标确定发射极电阻的第一电阻值和/或集电极电阻的第二电阻值；基于调节后的电阻值控制场效应管运行；可以解决现有的场效应管由于米勒效应的存在会拖慢开启和关闭的速度的问题；由于可以根据需要通过调节集电极电阻的阻值来调节场效应管的关闭速度、和/或通过调节发射极电阻的阻值来调节场效应管的开启速度，可以达到根据需要调节场效应管的开关速度的效果。
上述说明仅是本申请技术方案的概述，为了能够更清楚了解本申请的技术手段，并可依照说明书的内容予以实施，以下以本申请的较佳实施例并配合附图详细说明如后。
附图说明
图1是本申请一个实施例提供的场效应管的开关速度调节系统的结构示意图；
图2是本申请一个实施例提供的场效应管的关闭过程的示意图；
图3是本申请一个实施例提供的场效应管的开启过程的示意图；
图4是本申请一个实施例提供的场效应管的开关速度调节方法的流程图；
图5是本申请一个实施例提供的场效应管的开关速度调节装置的框图。
具体实施方式
下面结合附图和实施例，对本申请的具体实施方式作进一步详细描述。以下实施例用于说明本申请，但不用来限制本申请的范围。
图1是本申请一个实施例提供的场效应管的开关速度调节系统的电路图，如图1所示，场效应管的开关速度调节系统包括场效应管M1和与场效应管M1相连的驱动开关Q1。其中，驱动开关Q1的集电极c通过栅极电阻R g与场效应管M1的栅极g相连、驱动开关Q1的发射极e通过发射极电阻R e接地、驱动开关Q1的集电极c还通过集电极电阻R c连接至源极电阻R s，源极电阻R s的另一端与场效应管M1的源极s相连；场效应管M1的漏极d连接至电流源。
可选地，发射极电阻和所述集电极电阻为可调电阻。换句话说，发射极电阻和所述集电极电阻的阻值在对应范围内可变。
如图1所示的场效应管M1，该场效应管M1中存在极间电容，即栅极g和漏极d之间的极间电容C gd、栅极g和源极s之间的极间电容C gs、和漏极d和源极s之间的极间电容C ds。
可选地，驱动开关Q1的基极e还连接有基极电阻R e。驱动开关Q1的类型为PNP型三极管。
在场效应管的开关速度调节系统中，当输入信号V b为阶跃上升信号时，驱动开关管Q1将关断，集电极电阻R c的压降减小，进而关断场效应管M1，此时场效应管M1中C ds的压降上升。而由于场效应管M1中极间电容的影响，场效应管M1的关断会出现延时现象。
具体地，参考图2所示的场效应管的关闭过程的示意图，关断过程可以分 为四个阶段进行分析，各个阶段电压和电流的变化曲线如图2中的(b)部分所示，电流流向如图2中的(a)部分所示。
第一阶段[t 0～t 1]：场效应管M1中C gs的电压V GS下降，C gs放电，此时由公式(1-12)可得到栅极的电流i g，并且i g等于放电电流i 1，i g随着极间电压的减小而减小。根据场效应管的跨导效应，由公式(1-13)可知漏极电流i d减小，并且在C ds的电压V DS开始变化之前，场效应管M1中C gs的电压V GS将下降到平台电压V P。其中，平台电压V P可通过公式(1-14)计算得到。
Figure PCTCN2020108355-appb-000001
i d＝2k n(V GS-V TH)V DS0   (1-13)
V P＝2V DS0+V TH     (1-14)
其中，V GSm为C gs的电压在场效应管M1关断过程中的初始值、k n为场效应管M1的导电因子、V TH为场效应管M1的开启电压、V DS0为C ds的电压在场效应管M1关断过程中的初始值。
第二阶段[t 1～t 2]：随着场效应管M1漏极电流i d的减小，电流源上的压降开始降低，场效应管M1的C ds的电压V DS开始增大。但是，只要C ds的电压V DS有增大的趋势，场效应管M1的极间电容C gd需要被充电使其压降增大，而充电电流i 2由电流源I D提供。此时，由于极间电容C gd的充电电流i 2的方向和电容C gs的放电电流i 1的方向相反，电流i 2将限制电容C gs的放电，使得场效应管M1中C gs的电压V GS将保持在平台电压V P而不变。栅极电流i g近似等于充电电流i 2，可根据下述公式(1-15)计算得到；并且漏极电流i d也将因C gs的不变而保持不变，由下述公式(1-16)计算得到。在这个过程中，C ds的电压V DS不断增大，同时极间电容C gd不断被充电。
Figure PCTCN2020108355-appb-000002
i d＝k n(V P-V TH) 2    (1-16)
第三阶段[t 2～t 3]：当电压V DS上升到V DSm达到直流电源电压时，电流源I D停止对电容C gd充电，电压V GS继续下降，直到下降到场效应管的开启电压V TH。此时，栅极电流i g等于电容C gs的放电电流i 1，并根据公式(1-12)可计算得到，漏极电流i d也随着电压V GS的下降而逐渐减小到零。
第四阶段[t 3～t 4]：在这个阶段电容C gs继续放电，电压V GS逐渐减小到零。此时，场效应管M1完全被关断，漏极电压保持在V DSm。
根据关闭过程的四个阶段可知，在C ds的电压V DS伴随C gs的电压V GS的平台期，也即是平台电压V P的时间段内，栅极电流i g几乎全部用来给极间电容C gd充电，使得C ds的电压上升，而栅源电压V GS保持在平台电压V P不变。
当输入信号V b为阶跃下降信号时，驱动开关Q1将开通得更大，导致电阻R c上的压降上升，进而开通场效应管M1，使得场效应管M1中C ds的电压V DS下降。而由于场效应管M1极间电容的影响，M1的开启过程也会出现延时现象。
具体地，参考图3所示的场效应管的开启过程的示意图，开启过程可以分为四个阶段进行分析，各个阶段电压和电流的变化曲线如图3中的(b)部分所示，电流流向如图3中的(a)部分所示。
第一阶段[t 0～t 1]：场效应管M1的栅源电压V GS上升，其栅源两极之间的极间电容C gs需要充电，并且驱动开关Q1的动态驱动电流i g提供充电电流i 1，栅极电流i g由下述公式(1-17)可得到。在此期间，场效应管M1逐渐地开通，C gs-的电压V GS将上升到开启电压V TH。
Figure PCTCN2020108355-appb-000003
第二阶段[t 1～t 2]：在这个过程中，栅极电流i g继续给极间电容C gs充电，直到C gs的电压V GS增大到平台电压V P，并且根据上述公式(1-16)可知，漏极电流i d随着栅源电压V GS的增大而增大。
第三阶段[t 2～t 3]：当C gs的电压V GS增大到平台电压V P时，场效应管M1被开通的更大，漏极电流i d继续增大，电流源上的压降也将增大，C ds的电压V DS开始减小。此时，极间电容C gd需要放电才能使电压V DS减小，而此时场效应管M1还未完全开通，无法提供快速放电回路，因此几乎全部的栅极电流i g对它反向充电，栅极电流i g可由下述公式(1-18)计算得到。同时，因极间电容C gs停止充电，C gs的电压V GS维持电压V P恒定不变，C ds的电压V DS持续减小到最小值V DSO。
Figure PCTCN2020108355-appb-000004
第四阶段[t 3～t 4]：在这个阶段，栅极电流i g继续给极间电容充电C gs，使得C gs的电压V GS上升到最大，同时根据上述公式(1-13)，漏极电流i d随电压V GS的增大而增大，此时，场效应管M1完全被开通，C ds的电压保持在V DSO。
根据开启过程的四个阶段可知，在C ds的电压V DS伴随C gs的电压V GS的平台期，也即是平台电压V P的时间段内，栅极电流i g几乎全部用来给极间电容C gd充电，使得C ds的电压下降，而栅源电压V GS保持在平台电压V P不变。
结合关闭过程的四个阶段和开启过程的四个阶段可知，极间电容C gd充放电的越快，C gd的电压V GS的平台期也将越短，C ds的电压V DS的变化也就越快，场效应管M1的开关速度也会变快。
而i g越小极间电容C gd充放电的越快，根据公式(1-15)可知，在关闭过程中，i g的大小与R c的阻值有关；在开启过程中，i g的大小与R e的阻值有关，基于此，本申请提供下述场效应管的开关速度调节方法。
图4是本申请一个实施例提供的场效应管的开关速度调节方法的流程图，本实施例以该方法应用于图1所示的场效应管的开关速度调节系统中为例进行说明。该方法至少包括以下几个步骤：
步骤401，获取场效应管开关速度的调节目标。
调节目标用于指示场效应管的开启速度和/或关闭速度。
步骤402，基于调节目标确定发射极电阻的第一电阻值和/或集电极电阻的第二电阻值。
在一个示例中，调节目标包括用于调节开启速度的第一调节目标，基于第一调节目标确定发射极电阻的第一电阻值。
和/或，调节目标包括用于调节关闭速度的第二调节目标，基于第二调节目标确定集电极电阻的第二电阻值。
第一调节目标指示的开启速度与第一电阻值呈负相关关系：第二调节目标指示的关闭速度与第二电阻值呈负相关关系。
可选地，基于第一调节目标确定发射极电阻的第一电阻值，包括：获取开启速度与发射极电阻的阻值之间的第一对应关系；基于第一对应关系确定第一调节目标指示的开启速度对应的第一电阻值。
可选地，基于第二调节目标确定集电极电阻的第二电阻值，包括：获取关闭速度与集电极电阻的阻值之间的第二对应关系；基于第二对应关系确定第二调节目标指示的关闭速度对应的第二电阻值。
步骤403，基于调节后的电阻值控制场效应管运行。
综上所述，本实施例提供的场效应管的开关速度调节方法，通过获取场效应管开关速度的调节目标；基于调节目标确定发射极电阻的第一电阻值和/或集电极电阻的第二电阻值；基于调节后的电阻值控制场效应管运行；可以解决现有的场效应管由于米勒效应的存在会拖慢开启和关闭的速度的问题；由于可以根据需要通过调节集电极电阻的阻值来调节场效应管的关闭速度、和/或通过调节发射极电阻的阻值来调节场效应管的开启速度，可以达到根据需要调节场效应管的开关速度的效果。
图5是本申请一个实施例提供的场效应管的开关速度调节装置的框图，本实施例以该装置应用于图1所示的场效应管的开关速度调节系统中为例进行说明。其中，场效应管与驱动开关相连，驱动开关的集电极通过栅极电阻与场效应管的栅极相连、驱动开关的发射极通过发射极电阻接地、驱动开关的集电极还通过集电极电阻连接至源极电阻，源极电阻的另一端与场效应管的源极相连；场效应管的漏极连接至电流源；该装置至少包括以下几个模块：目标获取模块510、阻值确定模块520和运行控制模块530。
目标获取模块510，用于获取所述场效应管开关速度的调节目标；
阻值确定模块520，用于基于所述调节目标确定所述发射极电阻的第一电阻值和/或所述集电极电阻的第二电阻值；
运行控制模块530，用于基于调节后的电阻值控制所述场效应管运行。
可选地，所述阻值确定模块520，用于：
所述调节目标包括用于调节开启速度的第一调节目标，基于所述第一调节目标确定所述发射极电阻的第一电阻值；和/或，
所述调节目标包括用于调节关闭速度的第二调节目标，基于所述第二调节目标确定所述集电极电阻的第二电阻值。
可选地，所述第一调节目标指示的开启速度与所述第一电阻值呈负相关关系：所述第二调节目标指示的关闭速度与所述第二电阻值呈负相关关系。
相关细节参考上述方法实施例。
需要说明的是：上述实施例中提供的场效应管的开关速度调节装置在进行场效应管的开关速度调节时，仅以上述各功能模块的划分进行举例说明，实际应用中，可以根据需要而将上述功能分配由不同的功能模块完成，即将场效应管的开关速度调节装置的内部结构划分成不同的功能模块，以完成以上描述的全部或者部分功能。另外，上述实施例提供的场效应管的开关速度调节装置与场效应管的开关速度调节方法实施例属于同一构思，其具体实现过程详见方法实施例，这里不再赘述。
可选地，本申请还提供有一种计算机可读存储介质，所述计算机可读存储介质中存储有程序，所述程序由处理器加载并执行以实现上述方法实施例的场效应管的开关速度调节方法。
可选地，本申请还提供有一种计算机产品，该计算机产品包括计算机可读存储介质，所述计算机可读存储介质中存储有程序，所述程序由处理器加载并执行以实现上述方法实施例的场效应管的开关速度调节方法。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权 利要求为准。

Claims (10)

  1. 一种场效应管的开关速度调节方法，其特征在于，所述场效应管与驱动开关相连，所述驱动开关的集电极通过栅极电阻与所述场效应管的栅极相连、所述驱动开关的发射极通过发射极电阻接地、所述驱动开关的集电极还通过集电极电阻连接至源极电阻，所述源极电阻的另一端与所述场效应管的源极相连；所述场效应管的漏极连接至电流源；所述方法包括：
    获取所述场效应管开关速度的调节目标；
    基于所述调节目标确定所述发射极电阻的第一电阻值和/或所述集电极电阻的第二电阻值；
    基于调节后的电阻值控制所述场效应管运行。
  2. 根据权利要求1所述的方法，其特征在于，所述基于所述调节目标确定所述发射极电阻的第一电阻值和/或所述集电极电阻的第二电阻值，包括：
    所述调节目标包括用于调节开启速度的第一调节目标，基于所述第一调节目标确定所述发射极电阻的第一电阻值；和/或，
    所述调节目标包括用于调节关闭速度的第二调节目标，基于所述第二调节目标确定所述集电极电阻的第二电阻值。
  3. 根据权利要求2所述的方法，其特征在于，所述第一调节目标指示的开启速度与所述第一电阻值呈负相关关系：所述第二调节目标指示的关闭速度与所述第二电阻值呈负相关关系。
  4. 根据权利要求2所述的方法，其特征在于，所述基于所述第一调节目标确定所述发射极电阻的第一电阻值，包括：
    获取开启速度与所述发射极电阻的阻值之间的第一对应关系；
    基于所述第一对应关系确定所述第一调节目标指示的开启速度对应的第一电阻值。
  5. 根据权利要求2所述的方法，其特征在于，所述基于所述第二调节目标确定所述集电极电阻的第二电阻值，包括：
    获取关闭速度与所述集电极电阻的阻值之间的第二对应关系；
    基于所述第二对应关系确定所述第二调节目标指示的关闭速度对应的第二电阻值。
  6. 根据权利要求1所述的方法，其特征在于，所述驱动开关为PNP型三极管。
  7. 根据权利要求1至6任一所述的方法，其特征在于，所述发射极电阻和所述集电极电阻为可调电阻。
  8. 一种场效应管的开关速度调节装置，其特征在于，所述场效应管与驱动开关相连，所述驱动开关的集电极通过栅极电阻与所述场效应管的栅极相连、所述驱动开关的发射极通过发射极电阻接地、所述驱动开关的集电极还通过集电极电阻连接至源极电阻，所述源极电阻的另一端与所述场效应管的源极相连；所述场效应管的漏极连接至电流源；所述装置包括：
    目标获取模块，用于获取所述场效应管开关速度的调节目标；
    阻值确定模块，用于基于所述调节目标确定所述发射极电阻的第一电阻值和/或所述集电极电阻的第二电阻值；
    运行控制模块，用于基于调节后的电阻值控制所述场效应管运行。
  9. 根据权利要求8所述的装置，其特征在于，所述阻值确定模块，用于：
    所述调节目标包括用于调节开启速度的第一调节目标，基于所述第一调节目标确定所述发射极电阻的第一电阻值；和/或，
    所述调节目标包括用于调节关闭速度的第二调节目标，基于所述第二调节目标确定所述集电极电阻的第二电阻值。
  10. 根据权利要求8所述的装置，其特征在于，所述第一调节目标指示的开启速度与所述第一电阻值呈负相关关系：所述第二调节目标指示的关闭速度与所述第二电阻值呈负相关关系。
PCT/CN2020/108355 2020-01-08 2020-08-11 场效应管的开关速度调节方法和装置 WO2021139152A1 (zh)

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CN111162763B (zh) 2020-01-08 2023-11-03 苏州大学 场效应管的开关速度调节方法和装置
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