WO2021134831A1 - 有机发光二极管及其制备方法 - Google Patents

有机发光二极管及其制备方法 Download PDF

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Publication number
WO2021134831A1
WO2021134831A1 PCT/CN2020/071894 CN2020071894W WO2021134831A1 WO 2021134831 A1 WO2021134831 A1 WO 2021134831A1 CN 2020071894 W CN2020071894 W CN 2020071894W WO 2021134831 A1 WO2021134831 A1 WO 2021134831A1
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Prior art keywords
layer
electrode layer
emitting diode
organic light
light
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English (en)
French (fr)
Inventor
钟安星
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/966,009 priority Critical patent/US11943953B2/en
Publication of WO2021134831A1 publication Critical patent/WO2021134831A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating

Definitions

  • the invention relates to the field of display, in particular to an organic light emitting diode and a preparation method thereof.
  • OLED Organic Light-Emitting Diode
  • LCD liquid crystal display
  • OLED display technology is different from the traditional LCD display method. It does not require a backlight and uses a very thin organic material coating and glass substrate layer. When a current passes through, these organic materials will emit light. Because of its simple preparation process, low cost, low power consumption, high luminous brightness, wide range of operating temperature, light and thin size, fast response speed, and easy to achieve color display and large-screen display, easy to achieve matching with integrated circuit drivers, It is easy to realize the advantages of flexible display and so on, so it has broad application prospects.
  • the purpose of the present invention is to provide an organic light emitting diode and a preparation method thereof, so as to solve the problems of poor packaging effect of OLED light emitting devices and complicated preparation procedures in the prior art.
  • the present invention provides a method for manufacturing an organic light emitting diode, which includes the following steps: providing a substrate layer. A first electrode layer is formed on the substrate layer. A blended active layer is formed on the surface of the first electrode layer away from the substrate layer, wherein the blended active layer includes a light-emitting layer and a first encapsulation layer, and the first encapsulation layer covers the light-emitting layer. Layer surface; forming a second electrode layer on the surface of the first encapsulation layer away from the first electrode layer.
  • the step of forming a blended active layer on the surface of the first electrode layer facing away from the substrate layer includes: incorporating a polymer material into the luminescent material to form a blended active solution, and mixing the blended active solution Coating on the first electrode layer to form the blended active layer, wherein the polymer material is uniformly dispersed on the surface of the light-emitting layer.
  • blended active solution is formed on the surface of the first electrode layer away from the substrate layer in a roll-to-roll manner.
  • the manufacturing method of the organic light emitting diode further includes the following step: forming a second encapsulation layer on the surface of the second electrode layer facing away from the light emitting layer, wherein the second electrode layer is a cathode layer.
  • the present invention also provides an organic light emitting diode, which includes a substrate layer, a first electrode layer, a blended active layer, and a second electrode layer.
  • the first electrode layer is provided on the substrate layer.
  • the blended active layer is arranged on a surface of the first electrode layer away from the substrate layer.
  • the first electrode layer is arranged on a surface of the blended active layer away from the first electrode layer.
  • the second electrode layer is arranged on a surface of the blended active layer away from the first electrode layer.
  • the blended active layer includes a light-emitting layer and a first encapsulation layer, and the first encapsulation layer covers the surface of the light-emitting layer.
  • the materials of the blended active layer include luminescent materials and polymer materials.
  • the material of the first encapsulation layer includes a polymer material.
  • the organic light emitting diode further includes a second encapsulation layer, and the second encapsulation layer is provided on a surface of the second electrode layer that faces away from the blended active layer.
  • the first electrode layer is an anode layer
  • the second electrode layer is a cathode layer
  • the present invention also provides a display device, which includes the organic light emitting diode as described above.
  • the preparation method of the organic light-emitting diode in the present invention has simple preparation process and low preparation cost, and can improve the packaging ability of the organic light-emitting diode without adding a new process.
  • An organic light-emitting diode in the present invention is packaged on the surface of the light-emitting layer, the process is simple, and the light-emitting layer can be effectively protected, preventing water and oxygen from entering and corroding and reducing the activity of the light-emitting layer material, Effectively improve the service life of the organic light emitting diode. At the same time, it will not affect the luminous efficiency of the organic light emitting diode and the transport of carriers.
  • FIG. 1 is a schematic diagram of a layered structure of an organic light emitting diode in Embodiment 1 of the present invention
  • Figure 2 is a schematic flow chart of the manufacturing method of the organic light emitting diode in embodiment 1 of the present invention
  • FIG. 3 is a schematic diagram of the layered structure of the organic light emitting diode in Embodiment 2 of the present invention.
  • Fig. 4 is a schematic flow chart of the manufacturing method of the organic light emitting diode in Example 2 of the present invention.
  • Electron blocking layer 5 Blending active layer 6;
  • Light emitting layer 6A first encapsulation layer 6B;
  • Electron injection layer 9 second electrode layer 10;
  • the second encapsulation layer 11 The second encapsulation layer 11.
  • the part When some part is described as being “on” another part, the part may be directly placed on the other part; there may also be an intermediate part on which the part is placed, And the middle part is placed on another part.
  • a component When a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is indirectly “mounted to” or “connected to” through an intermediate component To" another part.
  • the embodiment of the present invention discloses an organic light emitting diode 100.
  • the organic light emitting diode 100 includes a substrate layer 1, a first electrode layer 2, a hole injection layer 3, a hole transport layer 4, The electron blocking layer 5, the blended active layer 6, the hole blocking layer 7, the electron transport layer 8, the electron injection layer 9, and the second electrode layer 10.
  • the material of the substrate layer 1 is polyimide (PI), which is a flexible substrate layer 1, which protects the structure of the organic light emitting diode 100 and promotes the organic light emitting diode 100 to realize flexible display.
  • PI polyimide
  • the first electrode layer 2 in question is provided on the substrate layer 1, and the material of the first electrode layer 2 is indium tin oxide (ITO), which is used to provide current and voltage to the organic light emitting diode 100 to promote holes Migrate to the light-emitting layer 6A.
  • ITO indium tin oxide
  • the first electrode layer 2 is an anode layer.
  • the hole injection layer 3 is provided on a surface of the first electrode layer 2 away from the substrate layer 1, and is used to reduce the potential barrier for hole injection from the first electrode layer 2 to make the holes Holes can be efficiently injected into the light-emitting layer 6A.
  • the hole transport layer 4 is provided on a surface of the hole injection layer 3 away from the first electrode layer 2, and is used to transport the holes in the hole injection layer 3 to the light-emitting layer Within 6A.
  • the electron blocking layer 5 is provided on a surface of the hole transport layer 4 away from the hole injection layer 3 to prevent electrons in the light-emitting layer 6A from entering the hole injection layer 3.
  • the blended active layer 6 includes a light-emitting layer 6A and a first encapsulation layer 6B.
  • the light-emitting layer 6A is disposed on a surface of the electron blocking layer 5 away from the hole transport layer 4, and its material includes a light-emitting material.
  • the holes and the electrons are concentrated in the light-emitting layer 6A and combined under the electric field voltage of the first electrode layer 2 and the second electrode layer 10, thereby converting electrical energy into light energy to achieve Electroluminescence.
  • the first encapsulation layer 6B wraps the surface of the light-emitting layer 6A.
  • the light transmittance of the first encapsulation layer 6B is greater than or equal to 50%, and its preparation material is made of a polymer material with high light transmittance, such as polyacrylonitrile, which is used to protect the light-emitting layer 6A, block water and oxygen, and avoid Carriers are trapped and deactivated in the process of forming excitons.
  • the hole blocking layer 7 is provided on a surface of the blended active layer 6 away from the electron blocking layer 5, and is used to prevent holes in the light-emitting layer 6A from entering the electron injection layer 9.
  • the electron transport layer 8 is provided on a surface of the hole blocking layer 7 away from the blended active layer 6, and is used to transport the electrons in the electron injection layer 9 to the light emitting layer 6A.
  • the electron injection layer 9 is provided on a surface of the electron transport layer 8 away from the hole blocking layer 7, and is used to reduce the potential barrier for injecting electrons from the second electrode layer 10 so that the electrons can be It is effectively injected into the light-emitting layer 6A.
  • the second electrode layer 10 is provided on a surface of the electron injection layer 9 away from the electron transport layer 8, and is used to provide a current and voltage to the electron injection layer 9 to promote electrons to move to the light emitting layer 6A .
  • the second electrode layer 10 is a cathode layer.
  • the injected holes and electrons migrate from the hole transport layer 4 and the electron transport layer 8 to the light emitting layer 6A, respectively , And are bound together in the light-emitting layer 6A due to the Coulomb force to form electron-hole pairs, that is, excitons, so as to excite the chemical molecules in the light-emitting layer 6A to generate light and realize self-luminescence.
  • the embodiment of the present invention also discloses a preparation method of the organic light emitting diode 100, the preparation process is shown in Fig. 2, and the specific preparation steps include:
  • Step S10) Provide substrate layer 1:
  • a substrate layer 1 is provided, and the substrate layer 1 is a flexible substrate layer 1 whose material is polyimide.
  • Step S20) forming a first electrode layer 2, a hole injection layer 3, and a hole transport layer 4 on the substrate layer 1 in sequence:
  • a layer of indium tin oxide material is plated on the substrate layer 1 by sputtering, evaporation and other processes to form the first electrode layer 2.
  • a hole injection material and a hole transport material are sequentially plated on a surface of the first electrode layer 2 away from the substrate layer 1 by a process such as evaporation to form the hole injection layer 3 and the hole transport layer 4.
  • the luminescent material is mixed with polymer material polyacrylonitrile to form a blended active solution, the blended active solution is coated on the hole transport layer 4 in a roll-to-roll manner, and the blend is formed after drying The active layer 6.
  • the blended active layer 6 includes a light-emitting layer 6A and a first encapsulation layer 6B covering the surface of the light-emitting layer 6A, and the polymer material in the blended active solution is uniformly dispersed in the light-emitting layer 6A The first encapsulation layer 6B is formed on the surface.
  • Step S40 The electron transport layer 8, the electron injection layer 9, and the second electrode layer 10 are sequentially on the blended active layer 6:
  • Electron transport materials, electron injection materials, and second electrode layer materials are sequentially plated on the surface of the blend active layer 6 away from the first electrode layer 2 by evaporation and other processes to form the electron transport layer 8, electrons The injection layer 9 and the second electrode layer 10.
  • the material of the second electrode layer 10 is conductive metal.
  • An embodiment of the present invention also provides a display device, which includes the organic light emitting diode 100 manufactured by the manufacturing method described above.
  • the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a notebook computer, and the like.
  • a first encapsulation layer 6B is coated on the surface of the light emitting layer 6A to protect the light emitting layer 6A and prevent the light emitting layer 6A from Corrosion by water and oxygen affects the activity of the light-emitting layer 6A material, and increases the service life of the organic light-emitting diode 100.
  • the first encapsulation layer 6B has high light transmittance, and its light transmittance is greater than or equal to 50%, and will not block the light emitted by the light emitting layer 6A.
  • the material of the first encapsulation layer 6B has a certain carrier transport capability and will not affect the carrier transport.
  • the manufacturing process is simple, and the packaging effect can be achieved without adding new packaging processes or adding packaging equipment, which saves resources and costs.
  • the embodiment of the present invention discloses an organic light emitting diode 100.
  • the organic light emitting diode 100 includes a substrate layer 1, a first electrode layer 2, a hole injection layer 3, a hole transport layer 4, The electron blocking layer 5, the blended active layer 6, the hole blocking layer 7, the electron transport layer 8, the electron injection layer 9, the second electrode layer 10, and the second encapsulation layer 11.
  • the material of the substrate layer 1 is polyimide (PI), which is a flexible substrate layer 1, which protects the structure of the organic light emitting diode 100 and promotes the organic light emitting diode 100 to realize flexible display.
  • PI polyimide
  • the first electrode layer 2 in question is provided on the substrate layer 1, and the material of the first electrode layer 2 is indium tin oxide (ITO), which is used to provide current and voltage to the organic light emitting diode 100 to promote holes Migrate to the light-emitting layer 6A.
  • ITO indium tin oxide
  • the first electrode layer 2 is an anode layer.
  • the hole injection layer 3 is provided on a surface of the first electrode layer 2 away from the substrate layer 1, and is used to reduce the potential barrier for hole injection from the first electrode layer 2 to make the holes Holes can be efficiently injected into the light-emitting layer 6A.
  • the hole transport layer 4 is provided on a surface of the hole injection layer 3 away from the first electrode layer 2, and is used to transport the holes in the hole injection layer 3 to the light-emitting layer Within 6A.
  • the electron blocking layer 5 is provided on a surface of the hole transport layer 4 away from the hole injection layer 3 to prevent electrons in the light-emitting layer 6A from entering the hole injection layer 3.
  • the blended active layer 6 includes a light-emitting layer 6A and a first encapsulation layer 6B.
  • the light-emitting layer 6A is disposed on a surface of the electron blocking layer 5 away from the hole transport layer 4, and its material includes a light-emitting material.
  • the holes and the electrons are concentrated in the light-emitting layer 6A under the driving of the electric field voltage of the first electrode layer 2 and the second electrode layer 10 and combined, thereby converting electrical energy into light energy to achieve Electroluminescence.
  • the first encapsulation layer 6B wraps the surface of the light-emitting layer 6A.
  • the light transmittance of the first encapsulation layer 6B is greater than or equal to 50%, and its preparation material is made of a polymer material with high light transmittance, such as polyacrylonitrile, which is used to protect the light-emitting layer 6A, block water and oxygen, and avoid Carriers are trapped and deactivated in the process of forming excitons.
  • the hole blocking layer 7 is provided on a surface of the blended active layer 6 away from the electron blocking layer 5, and is used to prevent holes in the light-emitting layer 6A from entering the electron injection layer 9.
  • the electron transport layer 8 is provided on a surface of the hole blocking layer 7 away from the blended active layer 6, and is used to transport the electrons in the electron injection layer 9 to the light emitting layer 6A.
  • the electron injection layer 9 is provided on a surface of the electron transport layer 8 away from the hole blocking layer 7, and is used to reduce the potential barrier for injecting electrons from the second electrode layer 10 so that the electrons can be It is effectively injected into the light-emitting layer 6A.
  • the second electrode layer 10 is provided on a surface of the electron injection layer 9 away from the electron transport layer 8, and is used to provide a current and voltage to the electron injection layer 9 to promote electrons to move to the light emitting layer 6A .
  • the injected holes and electrons migrate from the hole transport layer 4 and the electron transport layer 8 to the light emitting layer 6A, respectively , And are bound together in the light-emitting layer 6A due to the Coulomb force to form electron-hole pairs, that is, excitons, so as to excite the chemical molecules in the light-emitting layer 6A to generate light and realize self-luminescence.
  • the second encapsulation layer 11 is provided on a surface of the second electrode layer 10 away from the electron injection layer 9.
  • the material of the second encapsulation layer 11 is organic glue, which is used to isolate water and oxygen and protect the
  • the organic light-emitting diode 100 prevents corrosion and improves the service life of the organic light-emitting diode 100.
  • the embodiment of the present invention also discloses a method for preparing the organic light emitting diode 100, the preparation process is shown in Fig. 4, and the specific preparation steps include:
  • Step S10) Provide substrate layer 1:
  • a substrate layer 1 is provided, and the substrate layer 1 is a flexible substrate layer 1 whose material is polyimide.
  • Step S20) forming a first electrode layer 2, a hole injection layer 3, and a hole transport layer 4 on the substrate layer 1 in sequence:
  • a layer of indium tin oxide material is plated on the substrate layer 1 by sputtering, evaporation and other processes to form the first electrode layer 2.
  • a hole injection material and a hole transport material are sequentially plated on a surface of the first electrode layer 2 away from the substrate layer 1 by a process such as evaporation to form the hole injection layer 3 and the hole transport layer 4.
  • the luminescent material is mixed with polymer material polyacrylonitrile to form a blended active solution, the blended active solution is coated on the hole transport layer 4 in a roll-to-roll manner, and the blend is formed after drying The active layer 6.
  • the blended active layer 6 includes a light-emitting layer 6A and a first encapsulation layer 6B covering the surface of the light-emitting layer 6A, and the polymer material in the blended active solution is uniformly dispersed in the light-emitting layer 6A The first encapsulation layer 6B is formed on the surface.
  • Step S40 The electron transport layer 8, the electron injection layer 9, and the second electrode layer 10 are sequentially on the blended active layer 6:
  • Electron transport materials, electron injection materials, and second electrode layer materials are sequentially plated on the surface of the blend active layer 6 away from the first electrode layer 2 by evaporation and other processes to form the electron transport layer 8, electrons The injection layer 9 and the second electrode layer 10.
  • the material of the second electrode layer 10 is conductive metal.
  • An organic glue is coated on a surface of the second electrode layer 10 away from the blended active layer 6, and the organic glue is cured to form the second encapsulation layer 11.
  • An embodiment of the present invention also provides a display device, which includes the organic light emitting diode 100 manufactured by the manufacturing method described above.
  • the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a notebook computer, and the like.
  • an organic light emitting diode 100 which adopts a double-layer encapsulation.
  • a first encapsulation layer 6B is coated on the surface of the light-emitting layer 6A, and a first encapsulation layer 6B is coated on the second electrode layer 10 at the same time.
  • the second encapsulation layer 11 is provided, and the double-layer encapsulation can further prevent the light-emitting layer 6A from being corroded by water and oxygen to affect the activity of the light-emitting layer 6A, and can also prevent other devices in the organic light-emitting diode 100 from being corroded to the maximum To protect the organic light-emitting diode 100 and increase the service life of the organic light-emitting diode 100.
  • the first encapsulation layer 6B has high light transmittance, and its light transmittance is greater than or equal to 50%, and will not block the light emitted by the light emitting layer 6A.
  • the material of the first encapsulation layer 6B has a certain carrier transport capability and will not affect the carrier transport.
  • the manufacturing process is simple, and a better packaging effect can be achieved without additional processes, which saves resources and costs.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

本发明提供了一种有机发光二极管及其制备方法，其在所述发光层的表面上进行封装，工艺简单，并且能够有效保护所述发光层，防止水氧侵入发生腐蚀而降低所述发光层材料的活性，有效提高所述有机发光二极管的使用寿命。解决了现有技术中有机发光器件的封装效果不佳，以及制备程序繁杂等问题。

Description

有机发光二极管及其制备方法 技术领域
本发明涉及显示领域，特别是一种有机发光二极管及其制备方法。
 背景技术
OLED（Organic Light-Emitting Diode，有机发光二极管），是一种新兴的平板显示技术。OLED显示技术与传统的LCD显示方式不同，其无需背光灯，采用非常薄的有机材料涂层和玻璃衬底层，当有电流通过时，这些有机材料就会发光。由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快，而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点，因而具有广阔的应用前景。
OLED的发光器件在外加电场作用下，电子和空穴分别从阴极和阳极向夹在电极之间的有机功能层注入。其中注入的电子和空穴分别从电子传输层和空穴传输层向发光层迁移。电子和空穴注入到发光层后，由于库伦力的作用束缚在一起形成电子空穴对，即激子。由于电子和空穴传输的不平衡，激子的主要形成区域通常不会覆盖整个发光层，因而会由于浓度梯度产生扩散迁移。最终激子辐射衰退激发出光子，主要通过激子辐射跃迁，发出光子。为避免载流子在形成激子的过程中被陷阱捕获失活，使激子的数量减少导致发光效率降低，有效的封装方式十分必要。
 技术问题
本发明的目的是提供一种有机发光二极管及其制备方法，以解决现有技术中OLED发光器件的封装效果不佳，以及制备程序繁杂等问题。
 技术解决方案
为实现上述目的，本发明提供一种有机发光二极管的制备方法，其包括以下步骤：提供衬底层。在所述衬底层上形成第一电极层。在所述第一电极层背离所述衬底层的表面上形成共混活性层，其中，所述共混活性层包括发光层以及第一封装层，所述第一封装层包覆于所述发光层表面；在所述第一封装层背离所述第一电极层的表面形成第二电极层。
进一步地，在所述第一电极层背离所述衬底层的表面上形成共混活性层步骤中包括：在发光材料中掺入高分子材料形成共混活性溶液，并将所述共混活性溶液涂覆于所述第一电极层上形成所述共混活性层，其中，所述高分子材料均匀分散在所述发光层的表面。
进一步地，所述共混活性溶液通过卷对卷的方式形成于所述第一电极层背离所述衬底层的表面上。
进一步地，所述有机发光二极管的制备方法中还包括以下步骤：在所述第二电极层背离所述发光层的表面上形成第二封装层，其中，所述第二电极层为阴极层。
本发明中还提供一种有机发光二极管，所述有机发光二极管包括衬底层、第一电极层、共混活性层以及第二电极层。
所述第一电极层设于所述衬底层上。所述共混活性层设于所述第一电极层远离所述衬底层的一表面上。所述第一电极层设于所述共混活性层远离所述第一电极层的一表面上。所述第二电极层设于所述共混活性层远离所述第一电极层的一表面上。
其中，所述共混活性层包括发光层以及第一封装层，所述第一封装层包覆于所述发光层表面。
进一步地，所述共混活性层的材料中包括发光材料和高分子材料。
进一步地，所述第一封装层的材料包括高分子材料。
进一步地，所述有机发光二极管中还包括第二封装层，所述第二封装层设于所述第二电极层背离所述共混活性层的一表面上。
进一步地，所述第一电极层为阳极层，所述第二电极层为阴极层。
本发明中还提供一种显示装置，所述显示装置中包括如上所述的有机发光二极管。
 有益效果
本发明的优点是：
本发明中的一种有机发光二极管的制备方法，其制备工艺简单，制备成本低，无需新增工艺就可以提高有机发光二极管的封装能力。
本发明中的一种有机发光二极管，其在所述发光层的表面上进行封装，工艺简单，并且能够有效保护所述发光层，防止水氧侵入发生腐蚀而降低所述发光层材料的活性，有效提高所述有机发光二极管的使用寿命。同时还不会对所述有机发光二极管的发光效率以及载流子的传输产生影响。
 附图说明
图1为本发明实施例1中有机发光二极管的层状结构示意图；
图2位本发明实施例1中有机发光二极管制备方法的流程示意图；
图3为本发明实施例2中有机发光二极管的层状结构示意图；
图4位本发明实施例2中有机发光二极管制备方法的流程示意图。
图中部件表示如下：
有机发光二极管100；
衬底层1；第一电极层2；
空穴注入层3；空穴传输层4；
电子阻挡层5；共混活性层6；
发光层6A；第一封装层6B；
空穴阻挡层7；电子传输层8；
电子注入层9；第二电极层10；
第二封装层11。
 本发明的实施方式
以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。
此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。
当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。
实施例1
本发明实施例中公开了一种有机发光二极管100，如图1所示，所述有机发光二极管100中包括衬底层1、第一电极层2、空穴注入层3、空穴传输层4、电子阻挡层5、共混活性层6、空穴阻挡层7、电子传输层8、电子注入层9以及第二电极层10。
所述衬底层1的材料为聚酰亚胺（Polyimide，PI），其为柔性衬底层1，在保护所述有机发光二极管100结构的同时促使所述有机发光二极管100能够实现柔性显示。
所诉第一电极层2设于所述衬底层1上，所述第一电极层2的材料为氧化铟锡（ITO），其用于为所述有机发光二极管100提供电流电压，促使空穴向所述发光层6A迁移。其中，所述第一电极层2为阳极层。
所述空穴注入层3设于所述第一电极层2远离所述衬底层1的一表面上，其用于降低从所述第一电极层2注入空穴的势垒，使所述空穴能从有效地注入到所述发光层6A中。
所述空穴传输层4设于所述空穴注入层3远离所述第一电极层2的一表面上，其用于将所述空穴注入层3内的空穴传输至所述发光层6A内。
所述电子阻挡层5设于所述空穴传输层4远离所述空穴注入层3的一表面上，其用防止所述发光层6A中的电子进入所述空穴注入层3内。
所述共混活性层6中包括发光层6A和第一封装层6B。
所述发光层6A设于所述电子阻挡层5远离所述空穴传输层4的一表面上，其材料中包含发光材料。所述空穴和所述电子在所述第一电极层2和所述第二电极层10的电场电压的驱动下汇聚在所述发光层6A内并结合，从而将电能转换为光能，实现电致发光。
所述第一封装层6B包裹所述发光层6A的表面。所述第一封装层6B的透光度大于或等于50%，其制备材料采用具有高透光度的高分子材料，例如聚丙烯晴，用于保护所述发光层6A，阻隔水氧，避免载流子在形成激子的过程中被陷阱捕获失活。
所述空穴阻挡层7设于所述共混活性层6远离所述电子阻挡层5的一表面上，其用于防止所述发光层6A内的空穴进入所述电子注入层9内。
所述电子传输层8设于所述空穴阻挡层7远离所述共混活性层6的一表面上，其用于将所述电子注入层9内的电子传输至所述发光层6A内。
所述电子注入层9设于所述电子传输层8远离所述空穴阻挡层7的一表面上，其用于降低从所述第二电极层10注入电子的势垒，使所述电子能从有效地注入到所述发光层6A中。
所述第二电极层10设于所述电子注入层9远离所述电子传输层8的一表面上，其用于为所述电子注入层9提供电流电压，促使电子向所述发光层6A移动。其中，所述第二电极层10为阴极层。
在所述第一电子层2和所述第二电极层10的电压驱动下，注入的空穴和电子分别从所述空穴传输层4和所述电子传输层8向所述发光层6A迁移，并在所述发光层6A中由于库伦力的作用束缚在一起，形成电子空穴对，即激子，从而激发所述发光层6A中的化学分子产生光亮，实现自发光。
本发明实施例中还公开了一种有机发光二极管100的制备方法，其制备流程如图2所示，其具体的制备步骤包括：
步骤S10）提供衬底层1：
提供一衬底层1，所述衬底层1为柔性衬底层1，其材料为聚酰亚胺。
步骤S20）在所述衬底层1上依次形成第一电极层2、空穴注入层3以及空穴传输层4：
在所述衬底层1上通过溅射、蒸发等工艺镀上一层氧化铟锡材料，形成所述第一电极层2。通过蒸镀等工艺在所述第一电极层2远离所述衬底层1的一表面上依次镀上空穴注入材料和空穴传输材料，形成所述空穴注入层3和所述空穴传输层4。
步骤S30）在所述空穴传输层4上形成共混活性层6：
在发光材料中掺入高分子材料聚丙烯晴形成共混活性溶液，将共混活性溶液通过卷对卷的方式涂覆在所述空穴传输层4上，并在干燥后形成所述共混活性层6。其中，所述共混活性层6中包括发光层6A和包覆在所述发光层6A表面的第一封装层6B，所述共混活性溶液中的高分子材料均匀分散在所述发光层6A的表面形成所述第一封装层6B。
步骤S40) 在所述共混活性层6上依次电子传输层8、电子注入层9以及第二电极层10：
通过蒸镀等工艺在所述共混活性层6远离所述第一电极层2的表面上依次镀上电子传输材料、电子注入材料以及第二电极层材料，形成所述电子传输层8、电子注入层9和所述第二电极层10。其中，所述第二电极层10材料为导电金属。
本发明实施例中还提供一种显示装置，其包括以上所述制备方法所制备的有机发光二极管100。所述显示装置具有可以为手机、平板电脑、笔记本电脑等任何具有显示功能的产品或者部件。
在本实施例中所提供的一种有机发光二极管100，其在所述发光层6A的表面包覆了一层第一封装层6B，用于保护所述发光层6A，防止所述发光层6A被水氧腐蚀而影响发光层6A材料的活性，提高所述有机发光二极管100的使用寿命。并且，所述第一封装层6B具有高透光性，其透光率大于等于50%，不会阻挡所述发光层6A发出的光线。同时，所述第一封装层6B的材料具有一定的载流子传输能力，并不会对载流子的传输造成影响。
在本实施例中所提供的一种有机发光二极管100的制备方法，其制备过程简单，无需新增封装工艺、增加封装设备就可以达到封装效果，节约了资源及成本。
实施例2
本发明实施例中公开了一种有机发光二极管100，如图3所示，所述有机发光二极管100中包括衬底层1、第一电极层2、空穴注入层3、空穴传输层4、电子阻挡层5、共混活性层6、空穴阻挡层7、电子传输层8、电子注入层9、第二电极层10以及第二封装层11。
所述衬底层1的材料为聚酰亚胺（Polyimide，PI），其为柔性衬底层1，在保护所述有机发光二极管100结构的同时促使所述有机发光二极管100能够实现柔性显示。
所诉第一电极层2设于所述衬底层1上，所述第一电极层2的材料为氧化铟锡（ITO），其用于为所述有机发光二极管100提供电流电压，促使空穴向所述发光层6A迁移。其中，所述第一电极层2为阳极层。
所述空穴注入层3设于所述第一电极层2远离所述衬底层1的一表面上，其用于降低从所述第一电极层2注入空穴的势垒，使所述空穴能从有效地注入到所述发光层6A中。
所述空穴传输层4设于所述空穴注入层3远离所述第一电极层2的一表面上，其用于将所述空穴注入层3内的空穴传输至所述发光层6A内。
所述电子阻挡层5设于所述空穴传输层4远离所述空穴注入层3的一表面上，其用防止所述发光层6A中的电子进入所述空穴注入层3内。
所述共混活性层6中包括发光层6A和第一封装层6B。
所述发光层6A设于所述电子阻挡层5远离所述空穴传输层4的一表面上，其材料中包含发光材料。所述空穴和所述电子在所述第一电极层2和所述第二电极层10的电场电压的驱动下汇聚在所述发光层6A内并结合，从而将电能转换为光能，实现电致发光。
所述第一封装层6B包裹所述发光层6A的表面。所述第一封装层6B的透光度大于或等于50%，其制备材料采用具有高透光度的高分子材料，例如聚丙烯晴，用于保护所述发光层6A，阻隔水氧，避免载流子在形成激子的过程中被陷阱捕获失活。
所述空穴阻挡层7设于所述共混活性层6远离所述电子阻挡层5的一表面上，其用于防止所述发光层6A内的空穴进入所述电子注入层9内。
所述电子传输层8设于所述空穴阻挡层7远离所述共混活性层6的一表面上，其用于将所述电子注入层9内的电子传输至所述发光层6A内。
所述电子注入层9设于所述电子传输层8远离所述空穴阻挡层7的一表面上，其用于降低从所述第二电极层10注入电子的势垒，使所述电子能从有效地注入到所述发光层6A中。
所述第二电极层10设于所述电子注入层9远离所述电子传输层8的一表面上，其用于为所述电子注入层9提供电流电压，促使电子向所述发光层6A移动。
在所述第一电极层2和所述第二电极层10的电压驱动下，注入的空穴和电子分别从所述空穴传输层4和所述电子传输层8向所述发光层6A迁移，并在所述发光层6A中由于库伦力的作用束缚在一起，形成电子空穴对，即激子，从而激发所述发光层6A中的化学分子产生光亮，实现自发光。
所述第二封装层11设于所述第二电极层10远离所述电子注入层9的一表面上，所述第二封装层11的材料为有机胶，其用于隔绝水氧，保护所述有机发光二极管100，防止发生腐蚀，提高所述有机发光二极管100的使用寿命。
本发明实施例中还公开了一种有机发光二极管100的制备方法，其制备流程如图4所示，其具体的制备步骤包括：
步骤S10）提供衬底层1：
提供一衬底层1，所述衬底层1为柔性衬底层1，其材料为聚酰亚胺。
步骤S20）在所述衬底层1上依次形成第一电极层2、空穴注入层3以及空穴传输层4：
在所述衬底层1上通过溅射、蒸发等工艺镀上一层氧化铟锡材料，形成所述第一电极层2。通过蒸镀等工艺在所述第一电极层2远离所述衬底层1的一表面上依次镀上空穴注入材料和空穴传输材料，形成所述空穴注入层3和所述空穴传输层4。
步骤S30）在所述空穴传输层4上形成共混活性层6：
在发光材料中掺入高分子材料聚丙烯晴形成共混活性溶液，将共混活性溶液通过卷对卷的方式涂覆在所述空穴传输层4上，并在干燥后形成所述共混活性层6。其中，所述共混活性层6中包括发光层6A和包覆在所述发光层6A表面的第一封装层6B，所述共混活性溶液中的高分子材料均匀分散在所述发光层6A的表面形成所述第一封装层6B。
步骤S40) 在所述共混活性层6上依次电子传输层8、电子注入层9以及第二电极层10：
通过蒸镀等工艺在所述共混活性层6远离所述第一电极层2的表面上依次镀上电子传输材料、电子注入材料以及第二电极层材料，形成所述电子传输层8、电子注入层9和所述第二电极层10。其中，所述第二电极层10材料为导电金属。
步骤S50）在所述第二电极层10上形成第二封装层11：
在所述第二电极层10远离所述共混活性层6的一表面上涂覆有机胶，将所述有机胶固化形成所述第二封装层11。
本发明实施例中还提供一种显示装置，其包括以上所述制备方法所制备的有机发光二极管100。所述显示装置具有可以为手机、平板电脑、笔记本电脑等任何具有显示功能的产品或者部件。
在本实施例中所提供的一种有机发光二极管100，其采用双层封装，在所述发光层6A的表面包覆了一层第一封装层6B的同时在所述第二电极层10上设置了第二封装层11，双层封装能够进一步防止所述发光层6A被水氧腐蚀而影响发光层6A材料的活性，还能防止所述有机发光二极管100中的其他器件被腐蚀，最大限度的保护所述有机发光二极管100，提高所述有机发光二极管100的使用寿命。其中，所述第一封装层6B具有高透光性，其透光率大于等于50%，不会阻挡所述发光层6A发出的光线。同时，所述第一封装层6B的材料具有一定的载流子传输能力，并不会对载流子的传输造成影响。
在本实施例中所提供的一种有机发光二极管100的制备方法，其制备过程简单，无需新增工艺就可以达到更佳封装效果，节约了资源及成本。
虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。

Claims (10)

  1. 一种有机发光二极管的制备方法，其包括以下步骤：
    提供衬底层；
    在所述衬底层上形成第一电极层；
    在所述第一电极层背离所述衬底层的表面上形成共混活性层，其中，所述共混活性层包括发光层以及第一封装层，所述第一封装层包覆于所述发光层表面；
    在所述第一封装层背离所述第一电极层的表面形成第二电极层。
  2. 如权利要求1所述的制备方法，其中，在所述第一电极层背离所述衬底层的表面上形成共混活性层步骤中包括：在发光材料中掺入高分子材料形成共混活性溶液，并将所述共混活性溶液涂覆于所述第一电极层上形成所述共混活性层，其中，所述高分子材料均匀分散在所述发光层的表面。
  3. 如权利要求2所述的制备方法，其中，所述共混活性溶液通过卷对卷的方式形成于所述第一电极层背离所述衬底层的表面上。
  4. 如权利要求1所述的制备方法，其还包括以下步骤：
    在所述第二电极层背离所述发光层的表面上形成第二封装层；
    其中，所述第二电极层为阴极层。
  5. 一种有机发光二极管，其包括：
    衬底层；
    第一电极层，设于所述衬底层上；
    共混活性层，设于所述第一电极层远离所述衬底层的一表面上；
    第二电极层，设于所述共混活性层远离所述第一电极层的一表面上；
    其中，所述共混活性层包括发光层以及第一封装层，所述第一封装层包覆于所述发光层表面。
  6. 如权利要求5所述的有机发光二极管，其中，所述共混活性层的材料中包括发光材料和高分子材料。
  7. 如权利要求6所述的有机发光二极管，其中，所述第一封装层的材料包括高分子材料。
  8. 如权利要求5所述的有机发光二极管，其还包括：
    第二封装层，设于所述第二电极层背离所述共混活性层的一表面上。
  9. 如权利要求5所述的有机发光二极管，其中，所述第一电极层为阳极层，所述第二电极层为阴极层。
  10.     一种显示装置，其包括如权利要求5所述的有机发光二极管。
PCT/CN2020/071894 2019-12-31 2020-01-14 有机发光二极管及其制备方法 Ceased WO2021134831A1 (zh)

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