WO2021120306A1 - 阵列基板及液晶显示装置 - Google Patents

阵列基板及液晶显示装置 Download PDF

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Publication number
WO2021120306A1
WO2021120306A1 PCT/CN2019/129206 CN2019129206W WO2021120306A1 WO 2021120306 A1 WO2021120306 A1 WO 2021120306A1 CN 2019129206 W CN2019129206 W CN 2019129206W WO 2021120306 A1 WO2021120306 A1 WO 2021120306A1
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Prior art keywords
electrode
pixel
array substrate
area
sub
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PCT/CN2019/129206
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English (en)
French (fr)
Inventor
曹武
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/640,741 priority Critical patent/US20220308403A1/en
Publication of WO2021120306A1 publication Critical patent/WO2021120306A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133753—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers with different alignment orientations or pretilt angles on a same surface, e.g. for grey scale or improved viewing angle
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy

Definitions

  • This application relates to the field of display technology, and in particular to an array substrate and a liquid crystal display device.
  • VA LCD Vertical Alignment Liquid Crystal Display (Vertical Alignment Liquid Crystal Display) has become a common display mode of TFT-LCD for large-size TVs due to its wide viewing angle, high contrast, and no need for alignment friction.
  • the number of pixel electrode domains is usually increased.
  • the main area and the sub area respectively contain 4 axisymmetric domains, and the characteristics of spatial and liquid crystal orientation differentiation reduce the difference between the front view and the side view. Small, that is, improve the side view color shift and other characteristics.
  • a thin film transistor device is generally added to adjust the voltage divider ratio, which will cause the pixel aperture ratio/native transmittance to be limited; on the other hand, in order to prevent the risk of crosstalk, it is generally necessary to increase The electric field shielding of DBS electrodes will further limit the increase in aperture ratio.
  • the present invention provides an array substrate and a liquid crystal display device.
  • the pixel area of the array substrate has a larger aperture ratio.
  • the present invention provides an array substrate including: a plurality of scan lines arranged in a horizontal direction, a plurality of data lines arranged in a vertical direction, and a plurality of pixel units arranged in an array; Any one of the pixel units includes:
  • Pixel electrodes including pixel electrodes in the main area and pixel electrodes in the sub-area;
  • Thin film transistors including a first thin film transistor that controls the pixel electrode of the main area and a second thin film transistor that controls the pixel electrode of the sub area,
  • the main zone pixel electrode and the sub zone pixel electrode are arranged on the same side of the first thin film transistor and the second thin film transistor.
  • the first thin film transistor includes a U-shaped first source and a striped first drain, and one end of the first drain is inserted into the first source Extremely U-shaped opening area;
  • the second thin film transistor includes a U-shaped second source electrode and a strip-shaped second drain electrode, one end of the second drain electrode is inserted into the U-shaped opening area of the second source electrode,
  • the U-shaped opening direction of the first source electrode is consistent with the U-shaped opening direction of the second source electrode.
  • the first source electrode is electrically connected to one of the plurality of data lines, and the first drain electrode is electrically connected to the pixel electrode of the main region;
  • the second source electrode is electrically connected to the first source electrode, and the second drain electrode is electrically connected to the pixel electrode of the sub-region.
  • the pixel electrodes of the main region and the pixel electrodes of the sub region have the same polarity.
  • the plurality of pixel units in the same column receive a signal from one of the plurality of data lines.
  • the pixel electrodes in the pixel units in any one column have the same polarity, which is the first polarity, and the pixel units in another column adjacent to the pixel units in any one column have the same polarity.
  • the pixel electrode of has a second polarity, and the first polarity and the second polarity are opposite polarities.
  • the pixel electrodes in the main area and the pixel electrodes in the sub-area are both arranged in four domains, and a plurality of branches extending in four different directions are respectively arranged in the four domains. electrode.
  • the plurality of branch electrodes extending in four different directions are a first branch electrode, a second branch electrode, a third branch electrode, and a fourth branch electrode.
  • the angle between a branch electrode and the horizontal direction is 45°
  • the angle between the second branch electrode and the horizontal direction is 135°
  • the angle between the third branch electrode and the horizontal direction is -135°
  • the first branch electrode is -135°.
  • the angle between the four branch electrodes and the horizontal direction is -45°.
  • the minimum distance between the pixel electrode in the main area and the pixel electrode in the sub-area is greater than or equal to 2.5 micrometers.
  • the pixel electrodes in the main area and the pixel electrodes in the sub-area are adjacently arranged in a column direction.
  • a blank area is provided inside the pixel electrode of the sub-area, and the pixel electrode of the main area is provided in the blank area.
  • the present invention also provides a liquid crystal display device including the aforementioned array substrate.
  • the present invention provides an array substrate.
  • the pixel electrodes in the array substrate are of eight-domain design, including four-domain main area pixel electrodes and four-domain sub-area pixel electrodes.
  • the present invention combines the main area pixel electrode and the sub-area pixel electrode.
  • the pixel electrode is placed on the same side of the scan line (thin film transistor switch), which can effectively increase the aperture ratio of the pixel area.
  • the pixel electrode of the main area and the pixel electrode of the sub-area are usually placed on both sides of the scan line respectively. Then, in the column direction, the pixel electrode of the main area in one pixel and the pixel electrode of the other
  • the pixel electrodes of the sub-area of a pixel are arranged adjacently, and two adjacent pixels usually have opposite polarities, that is, the pixel electrode of the main area of one pixel is opposite to the pixel electrode of the sub-area of another adjacent pixel.
  • Polarity due to the opposite polarity, a wider dark pattern will be formed at the junction, resulting in a decrease in the aperture ratio.
  • the eight-domain pixel electrode design provided by the present invention, dark lines caused by opposite polarities between adjacent pixels are avoided.
  • the pixel electrodes in the main area and the pixel electrodes in the sub-area have the same polarity. , It also avoids the appearance of wider dark lines, so it effectively improves the aperture ratio of the pixel area.
  • FIG. 1 is a schematic structural diagram of an array substrate provided by an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a polarity arrangement rule of pixel units according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a structure of a pixel electrode in a main area according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of an arrangement of pixel electrodes in a main area and pixel electrodes in a sub-area provided by an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present invention, “plurality” means two or more than two, unless otherwise specifically defined.
  • the pixel electrode is usually designed as an eight-domain structure, including the main area pixel electrode of the four-domain structure and the sub-area pixel electrode of the four-domain structure.
  • the pixel electrodes in the main area and the pixel electrodes in the sub-area are usually arranged on both sides of the thin film transistor.
  • the pixel electrodes in the sub-area of the Nth row of pixels It is adjacent to the pixel electrode of the main area of the pixel in the N+1th row and has the opposite polarity, and there will be a wider dark pattern at the junction, resulting in a decrease in the aperture ratio of the pixel unit.
  • the inventor found that when the polarities of adjacent pixels are different, wider dark lines appear at the junction, and when the polarities are the same, the dark lines at the junction are significantly narrowed.
  • the present invention is based on this The principle has achieved an increase in the opening rate, which will be described in detail later.
  • the embodiment of the present invention provides an array substrate. Please refer to FIG. 1 for the structure of the array substrate, which specifically includes:
  • a plurality of scanning lines 101 (only one shown in the figure) arranged in a horizontal direction controls the on and off of the thin film transistor;
  • a plurality of data lines 201 (only two are shown in the figure) arranged in a vertical direction input signals to the pixels to determine the voltage value of the pixel electrode, thereby controlling the brightness of the pixel;
  • any one of the pixel units includes:
  • Pixel electrode including the main area pixel electrode 301 and the sub area pixel electrode 302;
  • Thin film transistors the first thin film transistor T1 that controls the pixel electrode 301 in the main area and the second thin film transistor T2 that controls the pixel electrode 302 in the sub area,
  • the main zone pixel electrode 301 and the sub zone pixel electrode 302 are arranged on the same side of the first thin film transistor T1 and the second thin film transistor T2.
  • the pixel electrode of the sub-area of the Nth row is adjacent to the scan line/thin film transistor of the pixel unit of the N+1th row, and the non-pixel electrode is adjacent to the pixel electrode.
  • the pixel electrode of the main area is adjacent to the pixel electrode of the sub-area, but because the signal is injected into the same data line, the pixel electrode of the main area is The polarities of the pixel electrodes in the sub-regions are the same, and the dark lines at the junctions are narrower, so the pixel aperture ratio can be effectively increased.
  • the first thin film transistor T1 includes a U-shaped first source 2021 and a strip-shaped first drain 2031, and the first drain 2031 is inserted into the U-shaped opening area of the first source 2021 Set up
  • the second thin film transistor T2 includes a U-shaped second source 2022 and a strip-shaped second drain 2032, and the second drain 2032 is inserted into the U-shaped opening of the second source 2022.
  • the U-shaped opening direction of the first source electrode 2021 is consistent with the U-shaped opening direction of the second source electrode 2022.
  • setting the U-shaped opening direction of the first source electrode and the U-shaped opening direction of the second source electrode to be consistent is to facilitate wiring, so as to realize the pixel electrode of the main region and the The pixel electrode of the sub-region is placed on the same side of the thin film transistor, and other designs that can realize the pixel electrode of the main region and the pixel electrode of the sub-region are placed on the same side of the thin film transistor.
  • any one of the pixel units further includes a common electrode 102, which is formed by the same film forming process and patterning process as the scan line 101.
  • the orthographic projection patterns on the common electrode surface of the main area pixel electrode and the sub-area pixel electrode overlap the common electrode, forming the storage capacitor of the main area pixel electrode and the sub-area pixel electrode, respectively The storage capacitor.
  • first source 2021 is electrically connected to a data line 201
  • first drain 2031 is electrically connected to the main area pixel electrode 301
  • second source 2022 is electrically connected to the first
  • the source electrode 2021 is electrically connected
  • the second drain electrode 2032 is electrically connected to the pixel electrode 302 of the sub-region.
  • the second source electrode is electrically connected to the first source electrode and receives the same Data signal, so the pixel electrode of the main zone and the pixel electrode of the sub zone have the same polarity.
  • the pixel units in the same column receive signals from the same data line, that is, the pixel electrodes in the pixel units in the same column exhibit the same polarity.
  • the two adjacent data lines give different voltage signals, and the polarities of the pixel units in the two adjacent columns are different.
  • the pixel electrodes in the pixel units in any one column exhibit the same The polarity is the first polarity
  • the pixel electrode in the pixel unit of another column adjacent to the pixel unit of any one column has a second polarity
  • the first polarity and the second polarity are opposite polarities. Therefore, the pixel electrodes in the pixel units arranged in the array exhibit a rule as shown in FIG. 2.
  • the pixel electrodes of the main zone and the pixel electrodes of the sub zone are both arranged in four domains, and a plurality of branch electrodes extending in four different directions are respectively arranged in the four domains.
  • the main area pixel electrode 301 includes:
  • the main electrode 3011 has a cross-shaped structure, and divides the pixel unit into four domains;
  • Frame electrode 3016 a rectangular outer frame structure, electrically connected to the four ends of the main electrode 3011;
  • Multiple branch electrodes including a first branch electrode 3012, a second branch electrode 3013, a third branch electrode 3014, and a fourth branch electrode 3015 respectively located in four domains.
  • the branch electrodes in the four domains face four different directions respectively Extend, one end is electrically connected to the main electrode 3011, and the other end is electrically connected to the frame electrode 3016,
  • the angle between the first branch electrode 3012 and the horizontal direction is 45°
  • the angle between the second branch electrode 3013 and the horizontal direction is 135°
  • the third branch electrode 3014 The angle between the fourth branch electrode 3015 and the horizontal direction is -135°
  • the angle between the fourth branch electrode 3015 and the horizontal direction is -45°.
  • the minimum distance between the main area pixel electrode 301 and the sub-area pixel electrode 302 is greater than or equal to 2.5 microns, and a certain safety distance is set to prevent the occurrence between the main area pixel electrode and the sub-area pixel electrode. Interference, to prevent the particles generated during the process from causing the two to short-circuit.
  • the main area pixel electrode 301 and the sub area pixel electrode 302 are arranged adjacently in the column direction.
  • the arrangement of the pixel electrodes in the main area and the pixel electrodes in the sub-area is not limited to the above-mentioned adjacent arrangement, but may also be the arrangement as shown in FIG. 4, that is, the pixels in the sub-area A blank area is arranged inside the electrode 302, and the main area pixel electrode 301 is arranged in the blank area. In this way, the main area pixel electrode and the sub area pixel electrode are arranged in a shared area to optimize the display effect.
  • the positive and negative polarity of the pixel electrode mentioned in this application is defined by the potential relative to the common electrode of the color filter substrate.
  • the point of the common electrode in the color filter substrate is 6 ⁇ 7V.
  • negative polarity When the pixel electrode is smaller than the common electrode of the color filter substrate, it is called negative polarity; on the contrary, when the pixel electrode is larger than the common electrode of the color filter substrate, it is called positive polarity.
  • Another embodiment of the present invention also provides a liquid crystal display device including the aforementioned array substrate.
  • the display panel in the embodiment of the present invention may also include any other necessary structures as required, such as shared films.
  • Transistors to achieve the voltage difference between the pixel electrodes in the main area and the pixel electrodes in the sub-area through voltage division
  • the DBS electrode the ITO Com electrode on the side of the array substrate

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)

Abstract

一种阵列基板与液晶显示装置，阵列基板包括阵列排布的多个像素单元，任意一像素单元包括：像素电极：包括主区像素电极（301）与次区像素电极（302）；薄膜晶体管：包括控制主区像素电极（301）的第一薄膜晶体管（T1）以及控制次区像素电极（302）的第二薄膜晶体管（T2），主区像素电极（301）与次区像素电极（302）设置于第一薄膜晶体管（T1）与第二薄膜晶体管（T2）的同一侧。

Description

阵列基板及液晶显示装置 技术领域
本申请涉及显示技术领域，特别涉及一种阵列基板及液晶显示装置。
 背景技术
VA LCD(Vertical Alignment Liquid Crystal Display，垂直配向型液晶显示器)以其宽视野角度、高对比度和无需配向摩擦等优势，成为大尺寸电视用TFT-LCD的常见显示模式。
在现有的VA型LCD显示技术中，为了更优的广视角体验，诸如色度与可视角，通常增加像素电极畴数的方式进行提升。例如，通过设置具有不同驱动电压差的主区和次区，所述主区和次区分别含4个轴对称的畴，通过空间和液晶取向差异化的特性，使得正视/侧视之差异减小，即改善侧视色偏等特性。但在这种八畴的像素架构中，一般会增加一个薄膜晶体管器件进行分压比调节，便会造成画素开口率/原生穿透率受限；另一方面，为了防止串扰风险，一般需要增加DBS电极等做电场屏蔽，将进一步限制开口率提升。
 技术问题
本发明提供一种阵列基板与液晶显示装置，所述阵列基板的像素区有较大的开口率。
 技术解决方案
第一方面，本发明提供一种阵列基板，所述阵列基板包括：多条水平方向设置的扫描线、多条竖直方向设置的数据线以及阵列排布的多个像素单元，所述多个像素单元中的任一者包括：
像素电极：包括主区像素电极与次区像素电极；
薄膜晶体管：包括控制所述主区像素电极的第一薄膜晶体管以及控制所述次区像素电极的第二薄膜晶体管，
其中，所述主区像素电极与所述次区像素电极设置于所述第一薄膜晶体管与所述第二薄膜晶体管的同一侧。
在本申请实施例所提供的阵列基板中，所述第一薄膜晶体管包括U型形状的第一源极与条状的第一漏极，所述第一漏极的一端插入所述第一源极的U型开口区；
所述第二薄膜晶体管包括U型形状的第二源极与条状的第二漏极，所述第二漏极的一端插入所述第二源极的U型开口区，
其中，所述第一源极的U型开口方向与所述第二源极的U型开口方向一致。
在本申请实施例所提供的阵列基板中，所述第一源极与所述多条数据线中之一者电性连接，所述第一漏极与所述主区像素电极电性连接；所述第二源极与所述第一源极电性连接，所述第二漏极与所述次区像素电极电性连接。
在本申请实施例所提供的阵列基板中，在所述多个像素单元中的任意一者中，所述主区像素电极与所述次区像素电极的极性相同。
在本申请实施例所提供的阵列基板中，所述同一列的所述多个像素单元，由所述多条数据线中之一者给入信号。
在本申请实施例所提供的阵列基板中，任意一列所述的像素单元中的像素电极呈现相同的极性，为第一极性，与所述任意一列像素单元相邻的另一列像素单元中的像素电极呈现第二极性，所述第一极性与所述第二极性为相反的极性。
在本申请实施例所提供的阵列基板中，所述主区像素电极与所述次区像素电极均呈四畴设置，在所述四畴内分别设置了向四个不同方向延伸的多个分支电极。
在本申请实施例所提供的阵列基板中，所述向四个不同方向延伸的多个分支电极分别为第一分支电极、第二分支电极、第三分支电极以及第四分支电极，所述第一分支电极与水平方向的夹角为45°，所述第二分支电极与水平方向的夹角为135°、所述第三分支电极与水平方向的夹角为-135°，以及所述第四分支电极与水平方向的夹角为-45°。
在本申请实施例所提供的阵列基板中，所述主区像素电极与所述次区像素电极间的最小距离大于等于2.5微米。
在本申请实施例所提供的阵列基板中，所述主区像素电极与所述次区像素电极在列方向上相邻设置。
在本申请实施例所提供的阵列基板中，所述次区像素电极的内部设置有空白区域，所述主区像素电极设置于所述空白区域。
另一方面，本发明还提供了一种液晶显示装置，包括前述的阵列基板。
有益效果
本发明提供了一种阵列基板，所述阵列基板中的像素电极为八畴设计，包括四畴的主区像素电极与四畴的次区像素电极，本发明通过将主区像素电极与次区像素电极放置于扫描线（薄膜晶体管开关）的同一侧，可有效提升像素区域的开口率。
具体地，在现有的八畴像素电极设计中，通常将主区像素电极与次区像素电极分别放置于扫描线的两侧，那么在列方向上，一个像素中的主区像素电极与另一个像素的次区像素电极相邻排布，而相邻的两个像素通常具有相反的极性，即一个像素中的主区像素电极与相邻的另一个像素的次区像素电极呈现相反的极性，因极性相反导致在该交界处会形成一个较宽的暗纹，从而导致开口率降低。而在本发明提供的八畴像素电极设计中，避免了相邻的像素间因极性相反导致的暗纹，同时在同一个像素内，主区像素电极与次区像素电极之间极性相同，同样避免了较宽暗纹的出现，故有效提升了像素区域的开口率。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的一种阵列基板的结构示意图；
图2是本发明实施例提供的一种像素单元极性排布规律的示意图；
图3是本发明实施例提供的一种主区像素电极的结构示意图；
图4是本发明实施例提供的一种主区像素电极与次区像素电极排布方式的示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在现有的VA型LCD中，为了改善色偏等问题，通常将像素电极设计为八畴的架构，包括四畴结构的主区像素电极与四畴结构的次区像素电极，在现有的技术中，通常将主区像素电极与次区像素电极设置在薄膜晶体管的两侧，如此一来，在整体的像素排布中，对于同一列的像素单元，第N行像素的次区像素电极与第N+1行像素的主区像素电极相邻且极性相反，在该交界处会存在一个较宽的暗纹，导致像素单元的开口率降低。
发明人经光学仿真与实验测试均发现，当相邻的像素之间极性不同时，交界处会出现较宽暗纹，而极性相同时，交界处暗纹明显收窄，本发明基于此原理实现了开口率的提升，详见后述。
本发明实施例提供了一种阵列基板，所述阵列基板的结构请参见图1，具体包括：
多条水平方向设置的扫描线101（图中仅示出一条），控制薄膜晶体管的开与关；
多条竖直方向设置的数据线201（图中仅示出两条），向像素灌入信号，决定像素电极的电压值，从而控制像素的亮度；
以及阵列排布的多个像素单元，任意一所述的像素单元包括：
像素电极：包括主区像素电极301与次区像素电极302；
薄膜晶体管：控制所述主区像素电极301的第一薄膜晶体管T1以及控制所述次区像素电极302的第二薄膜晶体管T2，
其中，所述主区像素电极301与所述次区像素电极302设置于所述第一薄膜晶体管T1与所述第二薄膜晶体管T2的同一侧。
在本实施例提供的阵列基板中，对于同一列的像素单元，第N行的次区像素电极与第N+1行像素单元扫描线/薄膜晶体管相邻，而非像素电极与像素电极相邻，避免了较宽暗纹的产生，另一方面，在一个像素单元以内，主区像素电极与次区像素电极相邻，但由于为同一数据线灌入信号，所述主区像素电极与所述次区像素电极的极性相同，交界处暗纹较窄，故，可有效提升像素开口率。
进一步地，所述第一薄膜晶体管T1包括U型形状的第一源极2021与条状的第一漏极2031，所述第一漏极2031插入所述第一源极2021的U型开口区设置；
所述第二薄膜晶体管T2包括U型形状的第二源极2022与条状的第二漏极2032，所述第二漏极2032插入所述第二源极2022的U型开口区设置，
其中，所述第一源极2021的U型开口方向与所述第二源极2022的U型开口方向一致。
可以理解的是，将所述第一源极的U型开口方向与所述第二源极的U型开口方向设置为一致，是为了便于走线，以实现所述主区像素电极与所述次区像素电极放置于所述薄膜晶体管的同一侧，其他能实现所述主区像素电极与所述次区像素电极放置于所述薄膜晶体管的同一侧设计亦可。
进一步的，所述任意一像素单元中还包括公共电极102，与所述扫描线101为同一成膜工艺与图案化工艺形成。其中，所述主区像素电极与所述次区像素电极在所述公共电极面上的正投影图形与所述公共电极存在重叠的区域，分别形成主区像素电极的存储电容与次区像素电极的存储电容。
进一步地，所述第一源极2021与一数据线201电性连接，所述第一漏极2031与所述主区像素电极301电性连接；所述第二源极2022与所述第一源极2021电性连接，所述第二漏极2032与所述次区像素电极302电性连接。
其中所述第二源极与所述第一源极电性相连，接受到同样的Data信号，故主区像素电极与次区像素电极极性相同。
进一步地，所述同一列的像素单元，由同一条数据线给入信号，即同一列的像素单元中像素电极呈现相同的极性。
进一步地，所述任意相邻的两条数据线给入不同的电压信号，相邻的两列像素单元中极性相异，具体地，任意一列所述的像素单元中的像素电极呈现相同的极性，为第一极性，与所述任意一列像素单元相邻的另一列像素单元中的像素电极呈现第二极性，所述第一极性与所述第二极性为相反的极性，所述阵列排布的像素单元中像素电极呈现如图2所示的规律。
进一步地，所述主区像素电极与所述次区像素电极均呈四畴设置，在所述四畴内分别设置了向四个不同方向延伸的多个分支电极。
示例性地，以所述主区像素电极为例，如下进行了具体的描述。
请参照图3，所述主区像素电极301包括：
主干电极3011：为十字型构造，将像素单元划分为四个畴；
边框电极3016：矩形外框构造，分别于所述主干电极3011的四个端点电性连接；
多个分支电极：包括分别位于四个畴中的第一分支电极3012、第二分支电极3013、第三分支电极3014以及第四分支电极3015，四个畴内的分支电极分别向四个不同方向延伸，一端与所述主干电极3011电性连接，另一端与所述边框电极3016电性连接，
在一种优选的实施方式中，所述第一分支电极3012与水平方向的夹角为45°，所述第二分支电极3013与水平方向的夹角为135°、所述第三分支电极3014与水平方向的夹角为-135°，以及所述第四分支电极3015与水平方向的夹角为-45°。
在本实施例中，所述主区像素电极301与所述次区像素电极302间的最小距离大于等于2.5微米，通过设置一定的安全距离，防止主区像素电极与次区像素电极之间发生干扰，以防制程过程中产生的particle导致两者发生短接。
在本实施例中，所述主区像素电极301与所述次区像素电极302在列方向上相邻设置。
需要说明的是，所述主区像素电极与所述次区像素电极的排布方式不仅限定于上述的相邻设置，也可为如图4所示的排布方式，即将所述次区像素电极302内部设置一个空白区域，将所述主区像素电极301设置于该空白区域，如此，所述主区像素电极与所述次区像素电极通过共享区域的设置，优化显示效果。
需要说明的是，本申请中所提及的像素电极的正负极性由相对与彩膜基板公共电极的电位而定义，一般情况下彩膜基板中公共电极的点位为6~7V，当像素电极的点位小于彩膜基板公共电极点位时，称之为负极性；相反的，当像素电极的点位大于彩膜基板公共电极点位时，称之为正极性。
本发明的另一实施例还提供了一种液晶显示装置，包括前述的阵列基板。
需要说明的是，上述阵列基板实施例中仅描述了上述结构，可以理解的是，除了上述结构之外，本发明实施例显示面板中，还可以根据需要包括任何其他的必要结构，例如共享薄膜晶体管（通过分压以实现主区像素电极与次区像素电极间的电压差），以及DBS电极（在阵列基板侧的ITO Com电极）等，具体此处不作限定。
以上对本发明实施例所提供的一种阵列基板及液晶显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (12)

  1. 一种阵列基板，其中，所述阵列基板包括：多条水平方向设置的扫描线、多条竖直方向设置的数据线以及阵列排布的多个像素单元，所述多个像素单元中的任一者包括：
    像素电极：包括主区像素电极与次区像素电极；
    薄膜晶体管：包括控制所述主区像素电极的第一薄膜晶体管以及控制所述次区像素电极的第二薄膜晶体管，
    其中，所述主区像素电极与所述次区像素电极设置于所述第一薄膜晶体管与所述第二薄膜晶体管的同一侧。
  2. 如权利要求1所述的阵列基板，其中，所述第一薄膜晶体管包括U型形状的第一源极与条状的第一漏极，所述第一漏极的一端插入所述第一源极的U型开口区；
    所述第二薄膜晶体管包括U型形状的第二源极与条状的第二漏极，所述第二漏极的一端插入所述第二源极的U型开口区，
    其中，所述第一源极的U型开口方向与所述第二源极的U型开口方向一致。
  3. 如权利要求2所述的阵列基板，其中，所述第一源极与所述多条数据线中之一者电性连接，所述第一漏极与所述主区像素电极电性连接；所述第二源极与所述第一源极电性连接，所述第二漏极与所述次区像素电极电性连接。
  4. 如权利要求3所述的阵列基板，其中，在所述多个像素单元中的任意一者中，所述主区像素电极与所述次区像素电极的极性相同。
  5. 如权利要求1所述的阵列基板，其中，所述同一列的所述多个像素单元，由所述多条数据线中之一者给入信号。
  6. 如权利要求5所述的阵列基板，其中，任意一列所述的像素单元中的像素电极呈现相同的极性，为第一极性，与所述任意一列像素单元相邻的另一列像素单元中的像素电极呈现第二极性，所述第一极性与所述第二极性为相反的极性。
  7. 如权利要求1所述的阵列基板，其中，所述主区像素电极与所述次区像素电极均呈四畴设置，在所述四畴内分别设置了向四个不同方向延伸的多个分支电极。
  8. 如权利要求7所述的阵列基板，其中，所述向四个不同方向延伸的多个分支电极分别为第一分支电极、第二分支电极、第三分支电极以及第四分支电极，所述第一分支电极与水平方向的夹角为45°，所述第二分支电极与水平方向的夹角为135°、所述第三分支电极与水平方向的夹角为-135°，以及所述第四分支电极与水平方向的夹角为-45°。
  9. 如权利要求1所述的阵列基板，其中，所述主区像素电极与所述次区像素电极间的最小距离大于等于2.5微米。
  10. 如权利要求9所述的阵列基板，其中，所述主区像素电极与所述次区像素电极在列方向上相邻设置。
  11. 如权利要求9所述的阵列基板，其中，所述次区像素电极的内部设置有空白区域，所述主区像素电极设置于所述空白区域。
  12. 一种液晶显示装置，其中，包括权利要求1所述的阵列基板。
PCT/CN2019/129206 2019-12-16 2019-12-27 阵列基板及液晶显示装置 WO2021120306A1 (zh)

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111474786B (zh) * 2020-05-12 2021-07-06 深圳市华星光电半导体显示技术有限公司 液晶显示面板
CN113075825B (zh) * 2021-03-16 2022-05-17 Tcl华星光电技术有限公司 阵列基板及显示面板
CN114690494A (zh) * 2022-03-22 2022-07-01 苏州华星光电技术有限公司 显示面板及显示终端

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102231025A (zh) * 2011-08-04 2011-11-02 南京中电熊猫液晶显示科技有限公司 多畴垂直配向型液晶显示面板及其像素结构
CN102759833A (zh) * 2012-07-27 2012-10-31 京东方科技集团股份有限公司 一种阵列基板及显示装置
US20130135572A1 (en) * 2011-11-30 2013-05-30 Samsung Display Co., Ltd. Liquid crystal display device
CN103323992A (zh) * 2013-01-22 2013-09-25 友达光电股份有限公司 像素阵列基板及液晶显示面板
CN105137676A (zh) * 2015-10-09 2015-12-09 京东方科技集团股份有限公司 一种像素单元、阵列基板及垂直配向型液晶显示装置
CN107589602A (zh) * 2017-10-17 2018-01-16 深圳市华星光电半导体显示技术有限公司 一种具有新型像素设计的液晶显示面板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100736630B1 (ko) * 2001-06-26 2007-07-06 엘지.필립스 엘시디 주식회사 반투과형 액정표시장치용 컬러필터
CN101009083A (zh) * 2006-01-26 2007-08-01 奇美电子股份有限公司 应用于显示器的显示方法及显示器
CN104076563A (zh) * 2014-07-23 2014-10-01 吴健辉 一种液态晶体监视器
TWI550320B (zh) * 2014-12-31 2016-09-21 友達光電股份有限公司 畫素結構
KR102367968B1 (ko) * 2015-07-22 2022-02-25 삼성디스플레이 주식회사 액정 표시 장치
CN106292084B (zh) * 2016-08-26 2019-07-02 深圳市华星光电技术有限公司 像素结构及其制作方法
KR102544323B1 (ko) * 2016-11-08 2023-06-19 삼성디스플레이 주식회사 표시 장치
CN106707606B (zh) * 2017-03-14 2019-10-22 上海天马微电子有限公司 异形显示面板及显示装置
CN107015403B (zh) * 2017-04-05 2019-05-31 深圳市华星光电半导体显示技术有限公司 阵列基板
CN107895568A (zh) * 2017-12-28 2018-04-10 深圳市华星光电技术有限公司 液晶显示装置
CN110007533B (zh) * 2019-04-10 2020-12-01 惠科股份有限公司 像素电极及液晶显示面板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102231025A (zh) * 2011-08-04 2011-11-02 南京中电熊猫液晶显示科技有限公司 多畴垂直配向型液晶显示面板及其像素结构
US20130135572A1 (en) * 2011-11-30 2013-05-30 Samsung Display Co., Ltd. Liquid crystal display device
CN102759833A (zh) * 2012-07-27 2012-10-31 京东方科技集团股份有限公司 一种阵列基板及显示装置
CN103323992A (zh) * 2013-01-22 2013-09-25 友达光电股份有限公司 像素阵列基板及液晶显示面板
CN105137676A (zh) * 2015-10-09 2015-12-09 京东方科技集团股份有限公司 一种像素单元、阵列基板及垂直配向型液晶显示装置
CN107589602A (zh) * 2017-10-17 2018-01-16 深圳市华星光电半导体显示技术有限公司 一种具有新型像素设计的液晶显示面板

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