WO2021106417A1 - Cellule photovoltaïque, module de cellule photovoltaïque et procédé de fabrication de cellule photovoltaïque - Google Patents

Cellule photovoltaïque, module de cellule photovoltaïque et procédé de fabrication de cellule photovoltaïque Download PDF

Info

Publication number
WO2021106417A1
WO2021106417A1 PCT/JP2020/039064 JP2020039064W WO2021106417A1 WO 2021106417 A1 WO2021106417 A1 WO 2021106417A1 JP 2020039064 W JP2020039064 W JP 2020039064W WO 2021106417 A1 WO2021106417 A1 WO 2021106417A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
electrode
semiconductor substrate
connection
main surface
Prior art date
Application number
PCT/JP2020/039064
Other languages
English (en)
Japanese (ja)
Inventor
訓太 吉河
Original Assignee
株式会社カネカ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社カネカ filed Critical 株式会社カネカ
Priority to JP2021561214A priority Critical patent/JPWO2021106417A1/ja
Priority to CN202080077495.1A priority patent/CN114651336B/zh
Publication of WO2021106417A1 publication Critical patent/WO2021106417A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes

Definitions

  • the present invention relates to a solar cell, a solar cell module, and a method for manufacturing a solar cell.
  • a solar cell having a structure called PERC Passed Emitter and Real Cell
  • the PERC type solar cell is relatively expensive because a passivation film is formed on the back surface of the semiconductor substrate (the surface opposite to the light receiving surface) to prevent the generated carriers from recombining on the back surface of the semiconductor substrate.
  • the photoelectric conversion rate can be obtained.
  • the PERC type solar cell it is necessary to form an opening in the passivation film and extract electric power from a portion (base region) exposed from the opening of the semiconductor substrate. Therefore, the PERC type solar cell has a collection electrode that covers the back surface side of the passivation film, is filled inside the opening, and is connected to the semiconductor substrate.
  • the collection electrode has a main component of aluminum which has more holes by alloying with a semiconductor substrate and can form BSF (Back Surface Field) which suppresses carrier recombination. It is formed by a conductive paste (aluminum paste).
  • a conductive paste mainly composed of silver particles is used to provide a connection electrode having a relatively low electric resistance or a small electric resistance in the non-opening region of the passivation film.
  • connection electrode on the front surface side and the connection electrode on the back surface side are arranged so as to overlap in a plan view.
  • a conductivity called an interconnector is formed between a connection electrode on the front surface side of one solar cell and a connection electrode on the back surface side of an adjacent solar cell. Connected by members.
  • the connection electrodes on the front and back sides are arranged in the end region on the opposite side and directly connecting the connection electrodes on the back side of the solar cell adjacent to the connection electrodes on the front side of one solar cell, the connection electrodes are not exposed on the surface.
  • a solar cell module having a single ring structure that improves the overall photoelectric conversion efficiency in this way is also known.
  • the passivation film cannot be provided with an opening for current collection in the region where the connection electrode on the back surface side is provided, a region having low current collection efficiency is formed.
  • the photoelectric conversion efficiency cannot be sufficiently improved. Therefore, it is an object of the present invention to provide a solar cell, a solar cell module, and a method for manufacturing a solar cell having high photoelectric conversion efficiency.
  • the solar cell according to one aspect of the present invention is formed in a plate shape having a first main surface and a second main surface, and is spaced apart from each other along the first direction over the entire length of the second main surface.
  • a semiconductor substrate having a plurality of base regions arranged in parallel with each other, a plurality of first collecting electrodes arranged on the first main surface of the semiconductor substrate and extending in the first direction, and the first collecting electrode of the semiconductor substrate.
  • a first connecting electrode arranged in one end region of the first direction of the main surface and extending in a second direction intersecting the first direction so as to connect the plurality of first collecting electrodes, and a semiconductor substrate.
  • the second collection electrode may expose the ends of the passivation layer at both ends in the first direction.
  • the second collecting electrode may selectively cover the connection opening at both ends of the semiconductor substrate in the first direction.
  • the second connecting electrode may contain a plurality of silver particles and a binder
  • the second collecting electrode may contain a plurality of aluminum particles and a binder
  • the solar cell module according to another aspect of the present invention includes a plurality of the solar cells, and the second connection electrode of the other solar cell is directly connected to the first connection electrode of the solar cell.
  • a method for manufacturing a solar cell includes a step of laminating a passivation layer on the second main surface of a semiconductor substrate having a first main surface and a second main surface, and the first of the semiconductor substrates.
  • the passivation layer is subjected to the first direction over the entire length of the semiconductor substrate.
  • connection openings arranged in parallel with each other at intervals along the same direction, and in the end region of the passion layer in the first direction opposite to the first connection electrode, in the first direction.
  • a step of arranging a second collecting electrode that straddles and exposes the central portion of the second connecting electrode is provided.
  • the present invention it is possible to provide a solar cell, a solar cell module, and a method for manufacturing a solar cell having high photoelectric conversion efficiency.
  • FIG. 5 is a cross-sectional view taken along the line AA of the solar cell of FIG. It is sectional drawing BB of the solar cell of FIG. It is a flowchart which shows the procedure of the manufacturing method of the solar cell of FIG. It is a top view of the solar cell module including the solar cell of FIG. It is sectional drawing of the solar cell module of FIG. It is a back view of the solar cell which concerns on 2nd Embodiment of this invention.
  • FIG. 1 is a plan view of the solar cell 1
  • FIG. 2 is a back view of the solar cell 1 (showing a state of being turned inside out in the upper limit direction from FIG. 1)
  • FIG. 3 is a sectional view taken along line AA of FIG. 1 of the solar cell 1.
  • FIG. 4 is a sectional view taken along line BB in FIG. 1 of the solar cell 1.
  • the solar cell 1 of the present embodiment includes a plate-shaped semiconductor substrate 10 having a first main surface (light receiving surface) and a second main surface (back surface), and a plurality of first main surfaces arranged on the first main surface of the semiconductor substrate 10.
  • the antireflection layer 40 that covers the region between the 1 collection electrode 20, the first connection electrode 30 arranged on the first main surface of the semiconductor substrate 10, and the first collection electrode 20 on the first main surface of the semiconductor substrate 10.
  • the first collection electrode 20, the first connection electrode 30, and the second collection electrode 70 are hatched for the sake of clarity.
  • the semiconductor substrate 10 has a base material layer 11 showing a first conductive type, an emitter layer 12 formed on the first main surface side and showing a second conductive type different from the first conductive type, and a second main surface. It has a plurality of base regions 13 arranged on the side.
  • the semiconductor substrate 10 is made of a material constituting the base material layer 11, and can be formed from a base material showing a first conductive type.
  • the base material layer 11 (base material of the semiconductor substrate 10) can be composed of, for example, a polycrystalline silicon substrate or a single crystal silicon substrate containing boron, gallium, or the like.
  • the emitter layer 12 is formed on the entire first main surface of the semiconductor substrate 10.
  • the emitter layer 12 forms a pn junction with the base material layer 11 through which carriers pass. As a result, the emitter layer 12 is charged with a carrier.
  • the emitter layer 12 can be formed by doping the surface layer of the first main surface of the base material of the semiconductor substrate 10 with a dopant such as phosphorus. Specifically, the emitter layer 12 can be formed by diffusing a dopant in a thickness region of several ⁇ m from the surface of a crystalline silicon substrate by thermal diffusion. Further, the emitter layer 12 may be formed by forming an amorphous silicon layer or the like having a thickness of about 5 nm or more and 20 nm or less on the surface of the crystalline silicon substrate.
  • the base region 13 shows a first conductive type stronger than the base layer 11, and forms an electric field called BSF (Back Surface Field) having a charge opposite to that of the emitter layer 12.
  • BSF Back Surface Field
  • the base region 13 extends linearly along the first direction over the entire length of the semiconductor substrate 10 so as to cross the semiconductor substrate 10 on the second main surface of the semiconductor substrate 10, and is arranged in parallel with each other at intervals. Will be done. Preferably, they are arranged in a stripe shape arranged at regular intervals on the entire second main surface of the semiconductor substrate 10.
  • the term "linear” is not limited to the one that extends continuously with a constant width, and may have a break such as a broken line shape or a dotted line shape. Further, the width of the base region 13 does not have to be constant, and may have a shape such that the width formed as a set of circles, ellipses, etc. changes repeatedly.
  • the base region 13 can be formed by alloying the metal that is the main component of the second collecting electrode 70, which will be described later, by diffusing it on the surface layer of the second main surface of the base material of the semiconductor substrate 10, and is formed of, for example, aluminum silicide. Can be done.
  • the first collecting electrode 20 is a so-called finger electrode provided for collecting current from the emitter layer 12, and is formed on the first main surface of the semiconductor substrate 10 in a thin linear shape extending in the first direction.
  • the first collection electrodes 20 are preferably arranged parallel to each other at regular intervals.
  • the first collecting electrode 20 is preferably formed so as to be alternately arranged with the base region 13 in a plan view in order to improve the current collecting efficiency.
  • the first collection electrode 20 can be formed by printing and firing a conductive paste, and is preferably formed by a silver paste containing silver particles and a binder in order to reduce electrical resistance.
  • the width of the first collecting electrode 20 is preferably 30 ⁇ m or more and 100 ⁇ m or less.
  • the first connection electrode 30 extends in a second direction intersecting the first direction so as to connect the first collection electrode 20 to one end region of the first main surface of the semiconductor substrate 10 in the first direction. It is formed.
  • the first connection electrode 30 merges the currents collected by each first collection electrode 20 and connects to the adjacent solar cell 1 or an external circuit. Therefore, the first connection electrode 30 is formed in a band shape having a width larger than that of the first collection electrode 20.
  • the first connection electrode 30 is preferably formed so as to cross the semiconductor substrate 10 in the second direction so as to be connected to all the first collection electrodes 20.
  • the first connection electrode 30 can be formed by printing and firing a conductive paste such as silver paste, and is preferably formed integrally with the first collection electrode 20 when the first collection electrode 20 is molded.
  • the antireflection layer 40 suppresses the reflection of light on the surface of the solar cell 1 and increases the amount of light incident on the inside of the solar cell 1.
  • the antireflection layer 40 can be made of, for example, silicon nitride. Specifically, by subjecting the surface of the semiconductor substrate 10 to nitriding treatment, the surface of the semiconductor substrate 10 can be nitrided and modified into the antireflection layer 40. Further, by forming the first collecting electrode 20 and the first connecting electrode 30 on the surface of the semiconductor substrate 10 on which the antireflection layer 40 is formed by printing and firing an electric paste, the first collecting electrode 20 and the first connecting electrode 30 are formed.
  • the antireflection layer 40 can be left in a portion where the antireflection layer 40 penetrates the antireflection layer 40 and the first collection electrode 20 and the first connection electrode 30 are not formed.
  • the passivation layer 50 suppresses carrier recombination by chemically terminating the defect levels on the surfaces of the second main surfaces of the semiconductor substrate 10.
  • the passivation layer can be formed of silicon nitride, and a thin film of alumina that further improves the adhesiveness with the second collecting electrode 70 may be laminated on the back surface side of the thin film of silicon nitride.
  • connection openings 51 correspond to each base region 13 and extend linearly so as to cross the semiconductor substrate 10 along the first direction, and are arranged in parallel with each other. Therefore, the shape of the connection opening 51 is not limited to a continuous linear shape as in the shape of the base region 13, and may be a linear shape having a break such as a broken line shape or a dotted line shape. Further, the width of the connection opening 51 does not have to be constant, and may have a shape such that the width formed as a set of circles, ellipses, etc. changes repeatedly.
  • connection opening 51 can be formed by removing a part of the passivation layer 50 laminated on the entire second main surfaces of the semiconductor substrate 10 by laser irradiation or the like, as will be described in detail later.
  • the second connection electrode 60 is laminated side by side in the second direction so as not to overlap the connection opening 51 when viewed in the first direction, in the end region of the passivation layer 50 opposite to the first connection electrode 30 in the first direction. Will be done.
  • the plurality of second connection electrodes 60 are divided into a plurality of portions by removing a region overlapping the base region 13 from a single connection electrode (bus bar) in a conventional solar cell.
  • the increase in electrical resistance due to the removal of the base region 13 portion of the second connection electrode 60 can be compensated for by increasing the width of the second connection electrode 60 in the first direction.
  • the second connection electrode 60 does not overlap with the first connection electrode 30 in a plan view. That is, the first connection electrode 30 is not arranged on the front surface side of the end region on the side where the second connection electrode 60 is arranged on the semiconductor substrate 10, but the first collection electrode 20 is arranged and the back surface thereof. A base region 13 is formed on the side. As a result, the solar cell 1 can perform photoelectric conversion even in the end region on the side where the second connection electrode 60 is arranged.
  • the second connection electrode 60 can be formed by printing and firing a conductive paste.
  • the second connection electrode 60 contains silver particles and a binder, and is preferably formed by using a silver paste having excellent conductivity. It is preferable to provide a margin between the second connection electrode 60 and the connection opening 51 so that the second connection electrode 60 does not overlap with the connection opening 51 even if there is an error in printing the conductive paste.
  • the second collection electrode 70 is laminated so as to expose the central portion of the second connection electrode 60 across the base region 13, the passivation layer 50, and the second connection electrode 60 exposed in the connection opening 51.
  • the second collection electrode 70 connects between the base region 13 of the semiconductor substrate 10 and the second connection electrode 60.
  • the second collecting electrode 70 can reduce the electrical resistance between the base region 13 and the second connecting electrode 60 and make it difficult for the second collecting electrode 70 to be peeled off. it can.
  • the second collecting electrode 70 exposes the ends of the passivation layer 50 at both ends in the first direction.
  • the risk of a short circuit between the second collecting electrode 70 and the first collecting electrode 20 or the first connecting electrode 30 can be reduced.
  • the second collecting electrode 70 selectively covers the connection opening 51 at both ends of the semiconductor substrate 10. As a result, current can be collected from the end of the semiconductor substrate 10 in the first direction while reducing the risk of a short circuit between the second collecting electrode 70 and the first collecting electrode 20 or the first connecting electrode 30.
  • the overlapping width of the second collecting electrode 70 with the second connecting electrode 60 is on the side of the first connecting electrode 30 of the second connecting electrode 60 (the side where the distance to the end of the semiconductor substrate 10 in the first direction is large). It is preferably set to the maximum. As a result, the joint area between the second connecting electrode 60 and the second collecting electrode 70 becomes larger on the side where the current density of the second collecting electrode 70 is large, so that the portion where the current flows in the second collecting electrode 70 is large. It is possible to reduce the electric resistance of the current and collect current more efficiently.
  • the second collecting electrode 70 can be formed by printing and firing a conductive paste. It is preferable that the second collecting electrode 70 is mainly made of a metal capable of forming a base region by diffusing into the base material of the semiconductor substrate 10 and increasing the first conductivity. Specifically, the second collecting electrode 70 is preferably formed by using an aluminum paste containing aluminum particles and a binder.
  • the base region 13 is also formed in the end region where the second connection electrode 60 is arranged, and the electric power generated in the surface side region of the second connection electrode 60 of the semiconductor substrate 10 can also be recovered. it can. Therefore, the solar cell 1 has high photoelectric conversion efficiency. Further, in the solar cell 1, since the second connection electrode 60 is arranged between the connection openings 51, the electric resistance without lowering the photoelectric conversion efficiency by increasing the width of the second connection electrode 60 in the first direction. Can be reduced.
  • the solar cell 1 can be manufactured by the method for manufacturing a solar cell according to the present invention.
  • an embodiment of the method for manufacturing a solar cell according to the present invention will be described by taking the manufacturing of the solar cell 1 as an example with reference to FIG.
  • the solar cell 1 includes a step of forming the emitter layer 12 on the semiconductor substrate 10 (step S1: emitter layer forming step) and a step of laminating the antireflection layer 40 on the semiconductor substrate 10 (step S2: antireflection layer laminating step).
  • step S3 A step of laminating the passivation layer 50 on the second main surface of the semiconductor substrate 10 (step S3: passivation layer laminating step) and a step of arranging the first collecting electrode 20 on the first main surface of the semiconductor substrate 10 (step S4: The first collecting electrode laminating step), the step of arranging the first connecting electrode 30 on the first main surface of the semiconductor substrate 10 (step S5: the first connecting electrode laminating step), and the connection opening to the passion layer 50 by irradiation with a laser.
  • step S6 connection opening forming step
  • step S7 a second connection electrode laminating step
  • step S7 a second connection electrode laminating step
  • step S8 second collecting electrode laminating step
  • the emitter layer 12 is formed by doping the surface of the base material of the semiconductor substrate 10 with a dopant that exhibits conductivity different from that of the base material. Further, in the emitter layer forming step, the emitter layer 12 may be formed by laminating a layer of a material having a conductivity different from that of the base material on the surface of the base material of the semiconductor substrate 10 by a film forming technique.
  • the antireflection layer 40 can be formed by nitriding the semiconductor substrate 10. Further, the antireflection layer 40 may be formed by laminating a material for forming the antireflection layer 40 on the surface of the semiconductor substrate 10.
  • the passivation layer 50 is laminated on the second main surface of the semiconductor substrate 10 by a well-known film forming technique.
  • the first collecting electrode 20 is formed on the first main surface of the semiconductor substrate 10 by printing and firing the conductive paste.
  • a printing method of the conductive paste for example, screen printing can be adopted.
  • the first connection electrode 30 extending in the second direction so as to connect the first collection electrode 20 to the first main surface of the semiconductor substrate 10 is formed by printing and firing the conductive paste. Form.
  • This first connection electrode laminating step is preferably performed at the same time as the first collecting electrode laminating step of step S4. That is, the first collecting electrode 20 and the first connecting electrode 30 are integrally formed by printing the conductive paste on the surface of the semiconductor substrate 10 in a pattern including the first collecting electrode 20 and the first connecting electrode 30 and firing the paste. It is preferable to do so.
  • connection opening 51 can be formed by partially removing the passivation layer 50 by irradiating the laser.
  • the accuracy of the laser irradiation position in the first direction is generally lower than the accuracy in the second direction.
  • the connection opening 51 may be in the shape of a dotted line, which is intermittently irradiated with a laser pulse. In this case, the distance between the points forming the dotted line is determined by the pulse period and the laser scanning speed, and can be, for example, 0.1 mm or more and 1 mm or less.
  • connection electrode laminating process In the second connection electrode laminating step of step S7, the conductive paste having a small electric resistance is printed and fired in the first direction of the passivation layer 50 in the end region opposite to the first connection electrode 30 in the first direction.
  • a plurality of second connection electrodes 60 are laminated side by side in the second direction so as not to overlap with the connection opening 51. Even when the connection opening 51 is a dotted line, the connection opening 51 is arranged so as not to overlap the linear or band-shaped region in which the connection opening 51 line is formed, as in the case where the connection opening 51 is a continuous line.
  • the second connection electrode 60 is not arranged between the points.
  • each point on the dotted line (laser pulse timing) is not strictly controlled, it is technically difficult to match with the printing plate, and there is little merit.
  • the position of the point can be improved, but the productivity is lowered and the cost is increased.
  • one laser pulse forms one aperture, so that it becomes easy to control the influence of the laser on the semiconductor substrate 10.
  • the semiconductor substrate 10 that is, the base region 13 exposed in the connection opening 51 by printing and firing of the conductive paste having excellent connectivity with the base region 13, the passivation layer 50,
  • the second collecting electrode 70 is laminated so as to straddle the second connecting electrode 60 and expose the central portion of the second connecting electrode 60.
  • the laminated width of the second connection electrode 60 and the second collection electrode 70 is preferably 0.05 mm or more and 0.4 mm or less from the viewpoint of material use efficiency and connection resistance between the two electrodes.
  • the second collecting electrode 70 is at least in the vicinity of the connection opening 51 of the region where the semiconductor substrate 10 is cut to separate the individual solar cells 1 (both ends of the semiconductor substrate 10 of the solar cell 1 after separation in the first direction). It is preferable to expose the part other than the region. By doing so, the connection opening 51 can be completely covered with the second collecting electrode 70, and the second collecting electrode 70 covering the vicinity of the end portion can be minimized.
  • the metal of the conductive paste diffuses into the exposed region from the connection opening 51 of the semiconductor substrate 10 and alloys.
  • the second collecting electrode 70 By forming the second collecting electrode 70 with an aluminum paste, the second main surface of the semiconductor substrate 10 can be locally modified to aluminum silicide to form the base region 13.
  • the solar cell module 100 is an embodiment of the solar cell module according to the present invention.
  • the solar cell module 100 includes a plurality of solar cells 1 of FIGS. 1 to 4.
  • the solar cell module 100 includes a plurality of solar cell strings 110 formed by connecting a plurality of solar cells 1, a front side protective member 120 arranged on the front surface side of the solar cell string 110, and a back surface of the solar cell string 110. It includes a back side protective member 130 arranged on the side, a sealing material 140 filled in a gap between the front side protective member 120 and the back side protective member 130, and a connecting member 150 for connecting between the solar cell strings.
  • the solar cell string 110 is formed by connecting a plurality of solar cells 1 by a single ring method in which the ends in the first direction are overlapped.
  • the first connection electrode 30 of one solar cell 1 and the second connection electrode 60 of the other solar cell 1 are connected to a conductive adhesive, solder, or the like. It is directly connected using the connection material 99 of.
  • the connection opening 51 is the second collecting electrode. It is preferably completely covered with 70.
  • the connecting material 99 on the first connecting electrode 30 protrudes and reaches the main surface on the opposite side, the short circuit does not occur unless the second collecting electrode 70 is touched, so that the back surface side of the first connecting electrode 30 is formed. It is preferable that the covering area of the second collecting electrode 70 in the end region of is as small as possible.
  • the solar cell 1 has an opposite end portion that contributes to photoelectric conversion of another solar cell 1 in an end region provided with a first connection electrode 30 that inhibits light from entering the semiconductor substrate 10. Areas overlap. Therefore, the entire surface of the solar cell string 110 contributes to photoelectric conversion.
  • the solar cell string 110 is a portion where the photoelectric conversion efficiency is low by using the solar cell 1 in which the base region 13 is evenly arranged in the region where the second connection electrode 60 is provided on the back surface side of the semiconductor substrate 10. Since there is no such thing, the photoelectric conversion efficiency is high.
  • the front side protective member 120 protects the solar cell 1 by covering the solar cell string 110, that is, the first main surface of the solar cell 1 via the sealing material 140.
  • the front side protective member 120 can be formed from a plate-shaped or sheet-shaped material, and is preferably excellent in translucency and weather resistance.
  • a transparent resin such as an acrylic resin or a polycarbonate resin, glass, or the like can be mentioned.
  • the surface of the front side protective member 120 may be processed into an uneven shape or coated with an antireflection coating layer in order to suppress the reflection of light.
  • the back side protective member 130 covers the back surface of the solar cell string 110 via the sealing material 140 to protect the solar cell 1.
  • the back side protective member 130 can be formed of a plate-like or sheet-like material, and is preferably excellent in water-shielding property.
  • the back side protective member 130 is a laminate of, for example, a resin film such as polyethylene terephthalate (PET), polyethylene (PE), an olefin resin, a fluorine-containing resin, or a silicone resin, and a metal foil such as aluminum foil. Is preferably used.
  • the sealing material 140 seals and protects the solar cell string 110, that is, the solar cell 1, is between the light receiving side surface of the solar cell 1 and the front side protective member 120, and the back surface of the solar cell 1. It is interposed between the back side protective member 130 and the back side protective member 130.
  • the sealing material 140 protects the solar cell 1 by adhering the solar cell string 110 to the front side protective member 120 and the back side protective member 130 and eliminating the gap around the solar cell string 110. Therefore, examples of the sealing material 140 include ethylene / vinyl acetate copolymer (EVA), ethylene / ⁇ -olefin copolymer, ethylene / vinyl acetate / triallyl isocyanurate (EVAT), and polyvinyl butyral (PVB). ), Acrylic resin, urethane resin, or a translucent thermoplastic resin such as silicone resin is preferably used.
  • EVA ethylene / vinyl acetate copolymer
  • EVAT ethylene / vinyl acetate / triallyl isocyanurate
  • PVB polyvinyl butyral
  • Acrylic resin, urethane resin, or a translucent thermoplastic resin such as silicone resin is preferably used.
  • the connecting member 150 connects between the first connection electrodes 30 of the solar cell 1 at one end of the solar cell string 110 and between the second connection electrodes 60 of the solar cell 1 at the other end of the solar cell string 110, respectively.
  • the connecting member 150 extends outward from between the front side protective member 120 and the back side protective member 130 so that it can be connected to the external circuit of the solar cell module 100.
  • the solar cell module 100 includes a solar cell string 110 using the solar cell 1 having high photoelectric conversion efficiency, the photoelectric conversion efficiency is high.
  • FIG. 8 shows the solar cell 1A according to the second embodiment of the present invention.
  • the solar cell 1A of FIG. 8 can be used for the solar cell module 100 of FIG. 7 instead of the solar cell 1 of FIG. Regarding the solar cell 1A of FIG. 8, the same components as those of the solar cell 1 of FIG. 1 are designated by the same reference numerals, and redundant description will be omitted.
  • the solar cell 1A of FIG. 8 includes a second collecting electrode 70A having a planar shape different from that of the second collecting electrode 70 of the solar cell 1 of FIG. That is, in the solar cell 1A of FIG. 8, the second collecting electrode 70 of the solar cell 1 of FIG. 1 is replaced with a second collecting electrode 70A having a different planar shape.
  • the second collection electrode 70A is selectively laminated so as to cover the base region 13, the second connection electrode 60, and the region near the second connection electrode 60 of the passivation layer 50 exposed in the connection opening 51.
  • the portion of the second collecting electrode 70A that covers the base region 13 covers the region near the connection opening 51 of the passivation layer 50 to the extent that the base region 13 in the connection opening 51 is not exposed in consideration of manufacturing errors.
  • the solar cell 1A can take in light even from the portion where the second collection electrode 70A on the back surface side is not arranged, the output can be improved depending on the environment in which it is used. Further, the solar cell 1A can be provided at low cost because the amount of the material used to form the second collection electrode 70A is relatively small.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Selon la présente invention, une cellule photovoltaïque (1) comprend : un substrat semi-conducteur ayant une seconde surface principale sur laquelle une pluralité de régions de base sont agencées en parallèle et à un intervalle l'une de l'autre, la pluralité de régions de base s'étendant le long d'une première direction sur toute la longueur de la seconde surface principale ; une pluralité de premières électrodes de collecte agencées sur une première surface principale du substrat semi-conducteur et s'étendant dans la première direction ; une première électrode de connexion agencée dans une région d'extrémité de la première surface principale du substrat semi-conducteur sur un côté dans la première direction, et s'étendant dans une seconde direction transversale à la première direction de façon à connecter la pluralité de premières électrodes de collecte ; une couche de passivation (50) empilée sur la seconde surface principale du substrat semi-conducteur et ayant une pluralité d'ouvertures de connexion (51) formées à l'intérieur, faisant apparaître les régions de base ; une pluralité de secondes électrodes de connexion (60) agencées dans une région d'extrémité de la couche de passivation (50) opposées aux premières électrodes de connexion dans la première direction, côte à côte dans la seconde direction de façon à ne pas chevaucher les ouvertures de connexion (51) ; et une seconde électrode de collecte (70) agencée sur les régions de base apparaissant dans les ouvertures de connexion (51), la couche de passivation (50) et les secondes électrodes de connexion (60), et faisant apparaître une partie centrale de chacune des secondes électrodes de connexion (60).
PCT/JP2020/039064 2019-11-29 2020-10-16 Cellule photovoltaïque, module de cellule photovoltaïque et procédé de fabrication de cellule photovoltaïque WO2021106417A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021561214A JPWO2021106417A1 (fr) 2019-11-29 2020-10-16
CN202080077495.1A CN114651336B (zh) 2019-11-29 2020-10-16 太阳能电池、太阳能电池模块以及太阳能电池的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019216869 2019-11-29
JP2019-216869 2019-11-29

Publications (1)

Publication Number Publication Date
WO2021106417A1 true WO2021106417A1 (fr) 2021-06-03

Family

ID=76129511

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/039064 WO2021106417A1 (fr) 2019-11-29 2020-10-16 Cellule photovoltaïque, module de cellule photovoltaïque et procédé de fabrication de cellule photovoltaïque

Country Status (3)

Country Link
JP (1) JPWO2021106417A1 (fr)
CN (1) CN114651336B (fr)
WO (1) WO2021106417A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016122749A (ja) * 2014-12-25 2016-07-07 京セラ株式会社 太陽電池素子および太陽電池モジュール
WO2017037803A1 (fr) * 2015-08-28 2017-03-09 三菱電機株式会社 Cellule solaire et procédé de fabrication de cellule solaire
CN107785444A (zh) * 2016-08-24 2018-03-09 新日光能源科技股份有限公司 太阳能电池
WO2019202958A1 (fr) * 2018-04-19 2019-10-24 株式会社カネカ Dispositif de batterie solaire et procédé de fabrication de dispositif de batterie solaire

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109346538B (zh) * 2014-05-27 2022-11-29 迈可晟太阳能有限公司 叠盖式太阳能电池模块
TWM551346U (zh) * 2017-06-19 2017-11-01 Neo Solar Power Corp 雙面太陽能電池及太陽能電池模組

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016122749A (ja) * 2014-12-25 2016-07-07 京セラ株式会社 太陽電池素子および太陽電池モジュール
WO2017037803A1 (fr) * 2015-08-28 2017-03-09 三菱電機株式会社 Cellule solaire et procédé de fabrication de cellule solaire
CN107785444A (zh) * 2016-08-24 2018-03-09 新日光能源科技股份有限公司 太阳能电池
WO2019202958A1 (fr) * 2018-04-19 2019-10-24 株式会社カネカ Dispositif de batterie solaire et procédé de fabrication de dispositif de batterie solaire

Also Published As

Publication number Publication date
JPWO2021106417A1 (fr) 2021-06-03
CN114651336A (zh) 2022-06-21
CN114651336B (zh) 2023-10-17

Similar Documents

Publication Publication Date Title
US10593820B2 (en) Solar cell module and method for manufacturing same
US9577138B2 (en) Solar cell and manufacturing method thereof
US9728658B2 (en) Solar cell module
KR102018652B1 (ko) 태양 전지
CN111615752B (zh) 太阳能电池模块
KR101923658B1 (ko) 태양전지 모듈
WO2020121694A1 (fr) Dispositif à cellules solaires et module de cellules solaires
JP4902472B2 (ja) 太陽電池及び太陽電池モジュール
JP6656225B2 (ja) 太陽電池およびその製造方法、ならびに太陽電池モジュール
US11374141B2 (en) Solar cell assembly and method of manufacturing solar cell
JPWO2020054129A1 (ja) 太陽電池デバイスおよび太陽電池モジュール
KR20140110231A (ko) 태양 전지 및 이의 제조 방법
WO2018001187A1 (fr) Cellule de batterie, matrice de cellules de batterie, cellule solaire et procédé de préparation de cellules de batterie
JP7270631B2 (ja) 太陽電池モジュール
JP6995828B2 (ja) 太陽電池モジュール
WO2021106417A1 (fr) Cellule photovoltaïque, module de cellule photovoltaïque et procédé de fabrication de cellule photovoltaïque
JPWO2019087590A1 (ja) 両面電極型太陽電池および太陽電池モジュール
CN107579122B (zh) 电池片、电池片矩阵、太阳能电池及电池片的制备方法
JP2022006836A (ja) 太陽電池ストリング及び太陽電池モジュール
KR102000063B1 (ko) 태양 전지 모듈
JP2017069442A (ja) 太陽電池モジュール
JP7483382B2 (ja) 太陽電池モジュール
WO2022030471A1 (fr) Cellule solaire et son procédé de fabrication
JP7481177B2 (ja) 太陽電池モジュール
JP2022149039A (ja) 太陽電池モジュール

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20894765

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021561214

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20894765

Country of ref document: EP

Kind code of ref document: A1